Method of manufacturing display device

Abstract

The method of manufacturing a display device includes: forming a plurality of first electrodes on a substrate; forming a first hole injection layer, a second hole injection layer, and a third hole injection layer on each of the plurality of first electrodes; forming a second hole transport layer and a third hole transport layer on the second hole injection layer and the third hole injection layer; forming a second light emitting layer and a third light emitting layer on the second hole transport layer and the third hole transport layer; and sequentially forming a first hole transport layer and a first emission layer on the first hole injection layer after forming the second emission layer and the third emission layer, each of the second emission layer and the third emission layer including quantum dots, and the first emission layer including an organic material.

Description

Technical Field

[0001] The present disclosure relates to a method of manufacturing a display device. Background Art

[0002] A light-emitting element is a device in which holes provided by an anode and electrons provided by a cathode combine to form excitons in a light-emitting layer formed between the anode and the cathode. When the excitons transition from an excited state to a ground state, light is emitted.

[0003] Light-emitting elements have one or more suitable advantages or enhancements (i.e., they provide several significant benefits), such as wide viewing angle, fast response speed, thinness, and / or low power consumption. Therefore, they are widely used in one or more suitable electrical and electronic devices, such as televisions, monitors, and / or mobile phones. Summary of the Invention

[0004] Aspects according to one or more embodiments are directed to a method of manufacturing a display device having improved lifespan and reliability of a light emitting element.

[0005] According to one or more embodiments, a method for manufacturing a display device includes: forming a plurality of first electrodes on a substrate; forming a first hole injection layer, a second hole injection layer, or a third hole injection layer on a corresponding one of the plurality of first electrodes; forming a second hole transport layer and a third hole transport layer on the second hole injection layer and the third hole injection layer, respectively; forming a second light-emitting layer and a third light-emitting layer on the second hole transport layer and the third hole transport layer, respectively; and after forming the second light-emitting layer and the third light-emitting layer, sequentially forming a first hole transport layer and a first light-emitting layer on the first hole injection layer, wherein each of the second light-emitting layer and the third light-emitting layer includes quantum dots, and the first light-emitting layer includes an organic material.

[0006] After forming the second light emitting layer and the third light emitting layer, the method may further include forming a second electron transport layer and a third electron transport layer on the second light emitting layer and the third light emitting layer, respectively.

[0007] After forming the second electron transport layer and the third electron transport layer, the first hole transport layer and the first light emitting layer may be sequentially formed.

[0008] The method may further include forming a first electron transport layer on the first light emitting layer.

[0009] The display device includes a blue light-emitting region overlapping with the first light-emitting layer, a red light-emitting region overlapping with the second light-emitting layer, and a green light-emitting region overlapping with the third light-emitting layer, and the method may further include forming a partition arranged between adjacent light-emitting regions selected from the blue light-emitting region, the red light-emitting region, and the green light-emitting region.

[0010] The first, second, and third hole injection layers may be spaced apart (eg, separated) from each other relative to the separator, and the first, second, and third hole transport layers may be spaced apart (eg, separated) from each other relative to the separator.

[0011] The method may further include forming a second electrode positioned continuously on the first light emitting layer, the second light emitting layer, and the third light emitting layer.

[0012] The first light emitting layer may include an organic polymer material, the second light emitting layer may include first (eg, red) quantum dots, and the third light emitting layer may include second (eg, green) quantum dots.

[0013] The second electron transport layer and the third electron transport layer may each include ZnMgO.

[0014] The first electron transport layer may include an organic electron transport material.

[0015] According to one or more embodiments, a method for manufacturing a display device includes: forming a plurality of first electrodes on a substrate; forming a first hole injection layer, a second hole injection layer, or a third hole injection layer on a corresponding one of the plurality of first electrodes, and forming a first hole transport layer on the first hole injection layer; forming a first light-emitting layer on the first hole transport layer; after forming the first light-emitting layer, forming a second hole transport layer and a third hole transport layer on the second hole injection layer and the third hole injection layer, respectively; and forming a second light-emitting layer and a third light-emitting layer on the second hole transport layer and the third hole transport layer, respectively.

[0016] After forming the first light emitting layer, the method may further include forming a first electron transport layer on the first light emitting layer.

[0017] After forming the first electron transport layer, the second hole transport layer and the third hole transport layer may be formed.

[0018] The method may further include forming a second electron transport layer and a third electron transport layer on the second light emitting layer and the third light emitting layer, respectively.

[0019] The method may further include forming a second electrode positioned continuously on the first electron transport layer, the second electron transport layer, and the third electron transport layer.

[0020] The display device may include a blue light-emitting region overlapping with the first light-emitting layer, a red light-emitting region overlapping with the second light-emitting layer, and a green light-emitting region overlapping with the third light-emitting layer, and the method may further include forming a partition arranged between adjacent light-emitting regions selected from the blue light-emitting region, the red light-emitting region, and the green light-emitting region.

[0021] The first, second, and third hole injection layers may be spaced apart (eg, separated) from each other relative to the separator, and the first, second, and third hole transport layers may be spaced apart (eg, separated) from each other relative to the separator.

[0022] The first light emitting layer may include an organic material, the second light emitting layer may include first quantum dots, and the third light emitting layer may include second quantum dots.

[0023] The second electron transport layer and the third electron transport layer may each include ZnMgO.

[0024] The first electron transport layer may include an organic electron transport material.

[0025] According to one or more embodiments, a method of manufacturing a display device having improved lifespan and reliability of a light emitting element may be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other aspects, features and enhancements of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings.

[0027] Figure 1 is a cross-sectional view of a display device according to one or more embodiments.

[0028] Figure 2 is a flowchart of a method of manufacturing some components of a display device according to one or more embodiments.

[0029] Figures 3 to 10 are cross-sectional views sequentially illustrating a manufacturing process of a display device according to one or more embodiments.

[0030] Figure 11 is a flowchart of a method of manufacturing some components of a display device according to one or more embodiments.

[0031] Figures 12 to 20 are cross-sectional views sequentially illustrating a manufacturing process of a display device according to one or more embodiments. DETAILED DESCRIPTION

[0032] Hereinafter, one or more suitable embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present disclosure. The present disclosure can be implemented in many different suitable forms and is not limited to the one or more embodiments described herein.

[0033] In order to clearly explain the present disclosure, parts irrelevant to the description are omitted (eg, may not be provided), and substantially the same or similar components are given the same reference numerals throughout the specification.

[0034] In addition, for the sake of convenience of explanation, the size and thickness of each component shown in the drawings are arbitrarily shown, and therefore the present disclosure is not necessarily limited to those shown. In the drawings, the thickness may be exaggerated to clearly illustrate one or more appropriate layers and regions. Also, in the drawings, the thickness of some layers and regions may be exaggerated for the sake of convenience of explanation.

[0035] In addition, if (for example, when) a portion of a layer, film, region, or plate is referred to as being "on" or "over" another portion, this includes not only the case where it is "directly" "over" the other portion, but also the case where the other portion exists between them. Conversely, if (for example, when) an element is referred to as being "directly" "over" another element, there are no intervening elements. Furthermore, "on" or "over" a reference portion means being above or below the reference portion, and does not necessarily mean being "on" or "over" it in a direction opposite to gravity.

[0036] Furthermore, throughout the specification, if (for example, when) a part is referred to as "including" a certain component, this means that it may further include other components, and does not exclude other components, unless specifically stated otherwise.

[0037] In addition, throughout the specification, if (for example, when) reference is made to "on a plane", this means if (for example, when) the target portion is observed from above, and if (for example, when) reference is made to "in a cross section", this means if (for example, when) the cross section of the target portion is cut vertically and observed from the side.

[0038] In the following, reference will be made to Figures 1 to 10 A display device and a method of manufacturing the display device according to one or more embodiments are described. Figure 1 is a cross-sectional view of a display device according to one or more embodiments, Figure 2 is a flowchart of a method for manufacturing some components of a display device according to one or more embodiments, and Figures 3 to 10 are cross-sectional views sequentially illustrating a manufacturing process of a display device according to one or more embodiments.

[0039] refer to Figure 1According to one or more embodiments, a display device includes a red light-emitting area RLA, a green light-emitting area GLA, and a blue light-emitting area BLA. A non-light-emitting area NLA may be located between the red light-emitting area RLA, the green light-emitting area GLA, and the blue light-emitting area BLA. That is, the non-light-emitting area NLA may be located between two adjacent light-emitting areas among the red light-emitting area RLA, the green light-emitting area GLA, and the blue light-emitting area BLA. Each light-emitting area may correspond to a pixel. For example, the blue light-emitting area BLA, the red light-emitting area RLA, and the green light-emitting area GLA may correspond to a blue pixel, a red pixel, and a green pixel, respectively. The shape and arrangement of each of the red light-emitting area RLA, the green light-emitting area GLA, and the blue light-emitting area BLA may be modified in one or more suitable ways.

[0040] The display device according to one or more embodiments includes a substrate SUB. The substrate SUB may include a flexible material such as plastic (eg, polymer material) that can be bent, folded, and / or rolled, or may include a rigid material.

[0041] The buffer layer BF may be located on the substrate SUB. According to an embodiment, the buffer layer BF may not be provided. The buffer layer BF may include silicon nitride (SiN x ), silicon oxide (SiO2), or silicon oxynitride. The buffer layer BF is located between the substrate SUB and the semiconductor layer ACT, and improves the properties of the semiconductor layer ACT (polycrystalline silicon of the semiconductor layer ACT) by forming polycrystalline silicon by blocking impurities from the substrate SUB during a crystallization process, and can relieve stress of the semiconductor layer ACT formed on the buffer layer BF by providing a flat surface (e.g., planarization).

[0042] The semiconductor layer ACT is located on the buffer layer BF. The semiconductor layer ACT can be made of polysilicon or an oxide semiconductor. The semiconductor layer ACT includes a channel region C, a source region S, and a drain region D. The source region S and the drain region D are respectively arranged on both sides (e.g., opposite sides) of the channel region C.

[0043] The channel region C is an intrinsic semiconductor that is not doped with impurities, and the source region S and the drain region D are impurity-doped semiconductors that are doped with conductive impurities. The semiconductor layer ACT may be made of an oxide semiconductor. In this case, a separate protective layer may be added to protect the oxide semiconductor material, which is susceptible to external environments such as high temperatures.

[0044] The gate insulating layer GI is located on the semiconductor layer ACT (eg, on the channel region C). The gate insulating layer GI may be a layer containing silicon nitride (SiN x ), a single layer or multiple layers of at least one of silicon oxide (SiO2) and silicon oxynitride.

[0045] The gate electrode GE is arranged on the gate insulating layer GI. The gate electrode GE may be a multi-layer stacked metal layer including any one of copper (Cu), copper alloy, aluminum (Al), aluminum alloy, molybdenum (Mo), and molybdenum alloy (for example, selected from any one of copper (Cu), copper alloy, aluminum (Al), aluminum alloy, molybdenum (Mo), and molybdenum alloy).

[0046] The interlayer insulating layer IL1 is located on the gate electrode GE and the gate insulating layer GI. The interlayer insulating layer IL1 may include silicon nitride (SiN x ), silicon oxide (SiO 2 ) or silicon oxynitride. The interlayer insulating layer IL1 has openings exposing the source region S and the drain region D, respectively.

[0047] The source electrode SE and the drain electrode DE are located on the interlayer insulating layer IL1 and are connected to the source region S and the drain region D of the semiconductor layer ACT through openings formed in the interlayer insulating layer IL1 , respectively.

[0048] The passivation layer IL2 is located on the interlayer insulating layer IL1, the source electrode SE, and the drain electrode DE. The passivation layer IL2 covers the interlayer insulating layer IL1, the source electrode SE, and the drain electrode DE and flattens the interlayer insulating layer IL1, the source electrode SE, and the drain electrode DE, so that the first electrodes E1a, E1b, and E1c can be formed on the passivation layer IL2 without steps (that is, allowing the first electrodes E1a, E1b, and E1c to be formed on a smooth surface without any irregularities). The passivation layer IL2 can be made of an organic material such as a polyacrylate resin and / or a polyimide resin, or have a laminated layer structure of organic and inorganic materials.

[0049] The first electrodes E1a, E1b, and E1c are positioned on the passivation layer IL2 and are electrically connected to the drain electrodes DE (eg, the respective drain electrodes DE) through the openings in the passivation layer IL2.

[0050] A driving transistor including a gate electrode GE, a semiconductor layer ACT, a source electrode SE, and a drain electrode DE is connected to the corresponding first electrode E1a, E1b, or E1c, and supplies a driving current to each light emitting element ED1, ED2, or ED3. Figure 1 In addition to the driving transistor shown in FIG, the display device according to this embodiment includes a switching transistor connected to the data line and transmitting a data voltage in response to a scan signal, and a switching transistor connected to the driving transistor and driven in response to the scan signal. The display device may further include a compensation transistor for compensating for the threshold voltage of the transistor.

[0051] The spacer PDL is located on the passivation layer IL2 and the first electrodes E1a, E1b, and E1c. The spacer PDL may have pixel openings OP1, OP2, and OP3 that overlap with the first electrodes E1a, E1b, and E1c and define the light-emitting area. The spacer PDL may include an organic material such as a polyacrylate resin and / or a polyimide resin, or an inorganic material based on silicon dioxide. The pixel openings OP1, OP2, and OP3 may have a planar shape substantially similar to that of the first electrodes E1a, E1b, and E1c, and may have a rhombus or an octagonal shape similar to a rhombus in a plane, but the present disclosure is not limited thereto, and the pixel openings OP1, OP2, and OP3 may have any shape such as a rectangle, a polygon, or the like.

[0052] According to one or more embodiments, the first light emitting element ED1 may overlap the blue light emitting area BLA, the second light emitting element ED2 may overlap the red light emitting area RLA, and the third light emitting element ED3 may overlap the green light emitting area GLA.

[0053] The first light emitting element ED1 includes a first electrode E1a, a first hole injection layer HIL1, a first hole transport layer HTL1, a first light emitting layer EML1, a first electron transport layer ETL1, and a second electrode E2.

[0054] The second light emitting element ED2 includes a first electrode E1b, a second hole injection layer HIL2, a second hole transport layer HTL2, a second light emitting layer EML2, a second electron transport layer ETL2, and a second electrode E2.

[0055] The third light-emitting element ED3 includes a first electrode E1c, a third hole injection layer HIL3, a third hole transport layer HTL3, a third light-emitting layer EML3, a third electron transport layer ETL3 and a second electrode E2.

[0056] The partition member PDL may be located between the blue light-emitting area BLA, the red light-emitting area RLA, and the green light-emitting area GLA. That is, the partition member PDL may be located between two adjacent light-emitting areas selected from the blue light-emitting area BLA, the red light-emitting area RLA, and the green light-emitting area GLA. The partition member PDL has a first opening OP1 that overlaps with the blue light-emitting area BLA, a second opening OP2 that overlaps with the red light-emitting area RLA, and a third opening OP3 that overlaps with the green light-emitting area GLA.

[0057] The first opening OP1 and the first electrode E1a of the first light-emitting element ED1 may overlap, the second opening OP2 and the first electrode E1b of the second light-emitting element ED2 may overlap, and the third opening OP3 and the first electrode E1c of the third light-emitting element ED3 may overlap. At least a portion of the first electrode E1a of the first light-emitting element ED1, a portion of the first electrode E1b of the second light-emitting element ED2, and a portion of the first electrode E1c of the third light-emitting element ED3 may overlap with the partition PDL. With the partition PDL, the first electrode E1a of the first light-emitting element ED1, the first electrode E1b of the second light-emitting element ED2, and the first electrode E1c of the third light-emitting element ED3 may be spaced and / or separated (e.g., spaced apart or separated) from each other (e.g., with the partition PDL therebetween).

[0058] The first hole injection layer HIL1 is located on the first electrode E1a of the first light-emitting element ED1, the second hole injection layer HIL2 is located on the first electrode E1b of the second light-emitting element ED2, and the third hole injection layer HIL3 is located on the first electrode E1c of the third light-emitting element ED3. The first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3 can be separated and / or separated (e.g., spaced apart or separated) from each other relative to the partition PDL (e.g., by the partition PDL). The first hole injection layer HIL1 is located in the first opening OP1, the second hole injection layer HIL2 is located in the second opening OP2, and the third hole injection layer HIL3 is located in the third opening OP3 (e.g., the first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3 can be located in the respective first opening OP1, second opening OP2, and third opening OP3).

[0059] Each of the first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3 may be formed by an inkjet process. The first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3 may include the same material, but the present disclosure is not limited thereto, and these hole injection layers may include different materials.

[0060] Each of the first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3 may include a hole injection material. The hole injection material may include one or more phthalocyanine compounds such as copper phthalocyanine, DNTPD (N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA (4,4',4"-[tris(3-methylphenyl)phenylamino]triphenylamine), TDATA (4,4',4"-tris(N,N-diphenylamino)triphenylamine), 2-TNATA (4,4',4"-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT / PSS (poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate)), PANI / D BSA (polyaniline / dodecylbenzenesulfonic acid), PANI / CSA (polyaniline / camphorsulfonic acid), PANI / PSS (polyaniline / poly(4-styrenesulfonate)), NPB (N,N'-di(naphthyl-1-yl)-N,N'-diphenyl-benzidine), NPD (N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine), triphenylamine-containing polyether ketone (TPAPEK), 4-isopropyl-4'-methyldiphenyliodonium [tetrakis(pentafluorophenyl)borate], HAT-CN (dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile), etc.

[0061] The first hole transport layer HTL1 is located on the first hole injection layer HIL1 , the second hole transport layer HTL2 is located on the second hole injection layer HIL2 , and the third hole transport layer HTL3 is located on the third hole injection layer HIL3 .

[0062] The first hole transport layer HTL1, the second hole transport layer HTL2, and the third hole transport layer HTL3 may be spaced and / or separated (e.g., spaced apart or separated) from each other relative to the partition PDL. The first hole transport layer HTL1 is located within the first opening OP1, the second hole transport layer HTL2 is located within the second opening OP2, and the third hole transport layer HTL3 may be located within the third opening OP3.

[0063] Each of the first hole transport layer HTL1, the second hole transport layer HTL2, and the third hole transport layer HTL3 may be formed by an inkjet process. The first hole transport layer HTL1, the second hole transport layer HTL2, and the third hole transport layer HTL3 may include the same material, but the present disclosure is not limited thereto, and these hole transport layers may include different materials.

[0064] Each of the first hole transport layer HTL1, the second hole transport layer HTL2, and the third hole transport layer HTL3 may include a hole transport material. The hole transport material may include, for example, one or more carbazole derivatives such as N-phenylcarbazole and / or polyvinylcarbazole, fluorene derivatives, such as TPD (N, N'-bis (3-methylphenyl) -N, N'-diphenyl-[1, 1-biphenyl] -4, 4'-diamine), TCTA (4, 4', 4"-tris (N-carbazolyl) triphenylamine), NPB (N, N'-di (naphthalene-1-yl) -N, N'-diphenyl-benzidine), TAPC (4, 4'-cyclohexylene) Triphenylamine derivatives include triphenylamine derivatives such as 1,3-bis(N-carbazolyl)benzene, CzSi(9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole), and m-MTDATA(4,4',4"-[tris(3-methylphenyl)phenylamino]triphenylamine).

[0065] The first light-emitting layer EML1 is located on the first hole transport layer HTL1, the second light-emitting layer EML2 is located on the second hole transport layer HTL2, and the third light-emitting layer EML3 is located on the third hole transport layer HTL3. The first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3 can be separated and / or separated from each other relative to the partition PDL (e.g., spaced apart or separated). The first light-emitting layer EML1 can be located in the first opening OP1, the second light-emitting layer EML2 can be located in the second opening OP2, and the third light-emitting layer EML3 can be located in the third opening OP3.

[0066] Each of the first light emitting layer EML1 , the second light emitting layer EML2 , and the third light emitting layer EML3 may be manufactured by an inkjet process.

[0067] The first light emitting layer EML1 , the second light emitting layer EML2 , and the third light emitting layer EML3 may emit light of different colors.

[0068] The first light emitting layer EML1 may emit blue light. The first light emitting layer EML1 may include an organic material, for example, a low molecular weight organic material or a high molecular weight organic material such as poly(3,4-ethylenedioxythiophene) (PEDOT) having a molecular weight of 10,000 or more.

[0069] The second light-emitting layer EML2 may emit red light. The second light-emitting layer EML2 may include first quantum dots. The third light-emitting layer EML3 may emit green light. The third light-emitting layer EML3 may include second quantum dots.

[0070] Herein, quantum dots including first quantum dots and second quantum dots will be described in more detail.

[0071] In this specification, quantum dots (also referred to as semiconductor nanocrystals) may include Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, Group IV elements or compounds, Group I-III-VI compounds, Group II-III-VI compounds, Group I-II-IV-VI compounds and / or (e.g., any suitable) combinations thereof.

[0072] II-VI compounds include: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; binary compounds selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, and CdHgSeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof. The II-VI compounds may also include Group III metals.

[0073] Group III-V compounds include binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNPs, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNPs, InNAs, InNSb, InPAs, InZnP, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. Group III-V compounds may also include Group II metals.

[0074] Group IV-VI compounds include: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof.

[0075] Group IV elements or compounds include: single element (e.g., single element) compounds selected from the group consisting of Si, Ge, and one or more (e.g., any suitable) combinations thereof; and binary compounds selected from the group consisting of SiC, SiGe, and one or more (e.g., any suitable) combinations thereof, but the present disclosure is not limited thereto.

[0076] Examples of Group I-III-VI compounds include, but are not limited to, CuInSe2, CuInS2, CuInGaSe, and CuInGaS. Examples of Group I-II-IV-VI compounds include, but are not limited to, CuZnSnSe and CuZnSnS. Group IV elements or compounds include: single elements selected from the group consisting of Si, Ge, and mixtures thereof; and binary compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0077] II-III-VI group compounds include ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe, ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe, HgInSe, HgGaTe, HgAlTe, HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe and / or one or more (e.g., any suitable) combinations thereof, but the present disclosure is not limited thereto. For example, the II-III-VI group compound can be selected from HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe and one or more (e.g., any suitable) combinations thereof.

[0078] The Group I-II-IV-VI compound may be selected from CuZnSnSe and CuZnSnS, but the present disclosure is not limited thereto.

[0079] In one or more embodiments, the quantum dots may not include (e.g., may exclude) cadmium. The quantum dots may include semiconductor nanocrystals based on Group III-V compounds containing indium and phosphorus. The Group III-V compounds may also include zinc. The quantum dots may include semiconductor nanocrystals based on Group II-VI compounds containing chalcogen elements (e.g., sulfur, selenium, tellurium, and / or one or more (e.g., any suitable) combinations thereof) and zinc.

[0080] In quantum dots, the above-mentioned two-element (binary) compound, three-element (ternary) compound and / or four-element compound may be present in a substantially uniform concentration in the particle, or may be present in the same particle with a concentration distribution partially divided into different stages (e.g., having a non-uniform concentration). In addition, a quantum dot may have a core-shell structure between other quantum dots (e.g., around other quantum dots or around other quantum dots). The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center of the core.

[0081] In one or more embodiments, the quantum dot can have a core-shell structure, which includes a core comprising the above-mentioned nanocrystals and a shell around the core (e.g., surrounding the core). The shell of the quantum dot can be used as a protective layer to maintain semiconductor properties by preventing or reducing the chemical denaturation of the core and / or as a charge layer to give the quantum dot electrophoretic properties. The shell can be a single layer or multilayer. The interface between the core and the shell can have a concentration gradient in which the concentration of the element present in the shell decreases toward the center of the core. Examples of quantum dot shells include metal or non-metal oxides, semiconductor compounds and / or one or more (e.g., any suitable) combinations thereof.

[0082] For example, oxides of metals or non-metals include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4 and / or NiO, ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4 and / or CoMn2O4, etc., but the present disclosure is not limited thereto.

[0083] In addition, semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc. However, the present disclosure is not limited thereto.

[0084] In one embodiment, the semiconductor nanocrystal can have a plurality of layers of a plurality of shells, and the plurality of layers of the plurality of shells can be arranged in a plurality of layers. The plurality of layers of the plurality of shells can be arranged in a plurality of layers. The plurality of layers of the plurality of shells can be arranged in a plurality of layers. The plurality of layers of the plurality of shells can be arranged in a plurality of layers. The plurality of layers of the plurality of shells can be arranged in a plurality of layers. The plurality of layers of the plurality of shells can be arranged in a plurality of layers. The plurality of layers of the plurality of shells can be arranged in a plurality of layers. The plurality of layers of the plurality of shells can be arranged in a plurality of layers.

[0085] The quantum dots can have an emission wavelength spectrum with a full width at half maximum (FWHM) of about 45 nm or less (e.g., about 40 nm or less, or about 30 nm or less), and within these ranges, color purity and / or color reproducibility can be improved. In addition, because light emitted by these quantum dots is emitted in all directions, the optical viewing angle can be improved.

[0086] Quantum dots can have different band gaps between the shell material and the core material. For example, the band gap of the shell material can be greater than the band gap of the core material. In one or more embodiments, the band gap of the shell material can be less than the band gap of the core material. Quantum dots can have multiple shells. In a multilayer shell, the band gap of the outer layer can be greater than the band gap of the inner layer (i.e., the layer closer to the core). In a multilayer shell, the band gap of the outer layer can be less than the band gap of the inner layer.

[0087] The absorption / emission wavelengths of quantum dots can be controlled by adjusting their composition and size. The maximum emission peak wavelength of quantum dots can range from ultraviolet wavelengths to infrared wavelengths or longer.

[0088] The quantum dots can have a quantum efficiency of at least about 10%, such as at least about 30%, at least about 50%, at least about 60%, at least about 70%, at least about 90%, or even 100%. The quantum dots can have a relatively narrow spectrum. The quantum dots can have, for example, a full width at half maximum of an emission wavelength spectrum of about 50 nm or less, such as about 45 nm or less, about 40 nm or less, or about 30 nm or less.

[0089] Quantum dot can have the particle size of about 1nm or larger and about 100nm or smaller.The size of particle refers to the diameter of particle or the diameter converted by assuming that the two-dimensional image obtained by transmission electron microscopy is spherical. In other words, if particle is spherical, the size of particle refers to its diameter, or the size of particle refers to the diameter calculated based on the two-dimensional image obtained by transmission electron microscopy assuming a spherical shape (for non-spherical particles, such as using major axis). Quantum dot can have the size of about 1nm to about 20nm, such as 2nm or larger, 3nm or larger or 4nm or larger and 50nm or smaller, 40nm or smaller, 30nm or smaller, 20nm or smaller, 15nm or smaller or 10nm or smaller. The shape of quantum dot is not particularly limited. For example, the shape of quantum dot can include but is not limited to sphere, polyhedron, pyramid, multipod, cube, cuboid, nanotube, nanorod, nanowire, nanosheet and / or its (for example, any suitable) combination.

[0090] Quantum dots are commercially available or can be suitably or appropriately synthesized.The particle size of the quantum dots can be relatively freely controlled or selected during colloidal synthesis, and the particle size can also be uniformly (eg, substantially uniformly) adjusted.

[0091] The quantum dot may include an organic ligand (e.g., having a hydrophobic portion and / or a hydrophilic portion). The organic ligand residue may be bound to the surface of the quantum dot. The organic ligand includes RCOOH, RNH2, (R)2NH, (R)3N, RSH, (R)3PO, (R)3P, ROH, RCOOR, RPO(OH)2, RHPOOH, (R)2POOH and / or (e.g., any suitable) combination thereof, wherein each R is independently C3 to C 40 (For example, C5 or above and C 24 Below) substituted or unsubstituted alkyl group, substituted or unsubstituted alkenyl group, substituted or unsubstituted C3 to C 40 aliphatic hydrocarbon groups, substituted or unsubstituted C6 to C 40 an aryl group, a substituted or unsubstituted C6 to C 40 (For example, C6 and above and C 20 hereinafter) and / or (eg, any suitable) combination thereof.

[0092] Examples of the organic ligand include: thiol compounds such as methanethiol, ethanethiol, propanethiol, butanethiol, pentanethiol, hexanethiol, octanethiol, dodecanethiol, hexadecanethiol, octadecanethiol and / or benzylthiol; amines such as methaneamine, ethaneamine, propanethiol, butanethiol, pentylamine, hexylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecane, octadecane, dimethylamine, diethylamine, dipropylamine, tributylamine, trioctylamine, etc.; carboxylic acid compounds such as formic acid, acetic acid, propionic acid, butyric acid, pentanoic acid, hexanoic acid, heptanoic acid, etc. Acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid and / or benzoic acid; phosphines such as methylphosphine, ethylphosphine, propylphosphine, butylphosphine, pentylphosphine, octylphosphine, dioctylphosphine, tributylphosphine, trioctylphosphine and the like; phosphine compounds such as methylphosphine oxide, ethylphosphine oxide, propylphosphine oxide, butylphosphine oxide, pentylphosphine oxide, tributylphosphine oxide, octylphosphine oxide, dioctylphosphine oxide and / or trioctylphosphine oxide; diphenylphosphine compounds and / or triphenylphosphine compounds or oxides thereof; C5-C 20 Alkylphosphonic acid, such as hexylphosphinic acid, octylphosphinic acid, dodecanephosphinic acid, tetradecanephosphinic acid, hexadecanephosphinic acid and / or octadecanephosphinic acid, but the present disclosure is not limited thereto. The quantum dots may include hydrophobic organic ligands in the form of a single or a mixture of one or more types (species). The hydrophobic organic ligand may not contain a photopolymerizable residue (e.g., an acrylate group, a methacrylate group, etc.).

[0093] Reference again Figure 1 , the first electron transport layer ETL1 may be located on the first light-emitting layer EML1, the second electron transport layer ETL2 may be located on the second light-emitting layer EML2, and the third electron transport layer ETL3 may be located on the third light-emitting layer EML3. The first electron transport layer ETL1, the second electron transport layer ETL2, and the third electron transport layer ETL3 may be separated and / or separated (e.g., spaced apart or separated) relative to the partition PDL. The first electron transport layer ETL1 is located in the first opening OP1, the second electron transport layer ETL2 is located in the second opening OP2, and the third electron transport layer ETL3 is located in the third opening OP3.

[0094] The first electron transport layer ETL1, the second electron transport layer ETL2, and the third electron transport layer ETL3 may each be formed by an inkjet process. The second electron transport layer ETL2 and the third electron transport layer ETL3 according to one or more embodiments may include the same electron transport material. The first electron transport layer ETL1 may include an electron transport material different from that of the second electron transport layer ETL2 and the third electron transport layer ETL3.

[0095] The first electron transport layer ETL1 may include an electron transport material, and according to an embodiment, may include a triazine-based compound or an anthracene-based compound. However, the present disclosure is not limited thereto, and the electron transport material may be (for example, is) selected from, for example, Alq3 (tris(8-hydroxyquinoline)aluminum), 1,3,5-tris[(3-pyridyl)-phenyl-3-yl]benzene, 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzimidazol-1-ylphenyl)-9,10-dinaphthothracene), TPBi (1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene), BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), TAZ (3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), NTAZ (4-(naphthalene-1-yl)-1,10-phenanthroline). )-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq (bis(2-methyl-8-hydroxyquinolinolato-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum), Bebq2 (bis(benzoquinolinolato-10-hydroxy)beryllium), ADN (9,10-di(naphthalene-2-yl)anthracene), TSPO1 (diphenyl(4-(triphenylsilyl)phenyl)phosphine oxide), TPM-TAZ (2,4,6-tris(3-(pyrimidin-5-yl)phenyl)-1,3,5-triazine), and mixtures (e.g., combinations thereof). In one or more embodiments, the second electron transport layer ETL2 and the third electron transport layer ETL3 may each include ZnMgO.

[0096] The second electrode E2 may be positioned on the first electron transport layer ETL1, the second electron transport layer ETL2, and the third electron transport layer ETL3. The second electrode E2 may be positioned continuously across the blue light emitting area BLA, the red light emitting area RLA, the green light emitting area GLA, and the non-light emitting area NLA. The second electrode E2 may receive a common voltage through a common voltage transmitter in the non-light emitting area NLA.

[0097] Here, the first electrodes E1a, E1b, and E1c may (for example, each) be an anode serving as a hole injection electrode, and the second electrode E2 may be a cathode serving as an electron injection electrode. However, one or more embodiments are not necessarily limited thereto, and depending on a driving method of the display device, the first electrodes E1a, E1b, and / or E1c may serve as cathodes, and the second electrodes E2 may serve as anodes.

[0098] The capping layer CPL may be positioned on the second electrode E2 and may be continuously positioned across the blue light emitting area BLA, the red light emitting area RLA, the green light emitting area GLA, and the non-light emitting area NLA.

[0099] The encapsulation layer ENC may be positioned on the capping layer CPL. The encapsulation layer ENC may seal the display layer by covering not only the top surface of the display layer including the light emitting elements ED1, ED2, and ED3 but also the side surfaces thereof.

[0100] Because the light-emitting element is susceptible (e.g., very susceptible) to moisture and oxygen, the encapsulation layer ENC seals the display layer and blocks the inflow of external moisture and / or oxygen. The encapsulation layer ENC may include a plurality of layers and may be formed as a composite layer including both an inorganic layer and an organic layer (e.g., including both an inorganic layer and an organic layer), and may be a three-layer structure in which a first inorganic layer, an organic layer, and a second inorganic layer are sequentially formed.

[0101] In the following, reference will be made to Figures 2 to 10 and described above Figure 1 A method of manufacturing a display device according to one or more embodiments will be described.

[0102] First, multiple transistors are formed on a substrate SUB, and first electrodes E1a, E1b, and E1c are formed on a passivation layer IL2. For convenience, the following figures only illustrate components located on the first electrodes E1a, E1b, and E1c. A partition PDL having openings OP1, OP2, and OP3 exposing the first electrodes E1a, E1b, and E1c, respectively, is formed on the first electrodes E1a, E1b, and E1c.

[0103] Then, a first ink (e.g., a first ink composition) for forming the hole injection layers HIL1, HIL2, and HIL3 is discharged into each of the openings OP1, OP2, and OP3 of the partition PDL (S1). Then, the discharged first ink is dried (S2) and baked (S3) to form the first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3, as shown in FIG. Figure 3 Although the present specification describes the first ink for convenience, each of the first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3 may include the same hole injection material or may include different hole injection materials.

[0104] Next, a second ink (e.g., a second ink composition) for forming the second hole transport layer HTL2 and the third hole transport layer HTL3 is discharged on the second hole injection layer HIL2 and the third hole injection layer HIL3 (S4). Then, the discharged second ink is dried (S5) and baked (S6) to form the second hole transport layer HTL2 and the third hole transport layer HTL3, as shown in FIG. Figure 4 Although the second ink is described herein for convenience, the second hole transport layer HTL2 and the third hole transport layer HTL3 may each include the same hole transport material or different hole transport materials. In this case, no hole transport layer is formed in the first opening OP1.

[0105] Next, a third ink (e.g., a third ink composition) for forming the second light-emitting layer EML2 and the third light-emitting layer EML3 is discharged on the second hole transport layer HTL2 and the third hole transport layer HTL3 (S7). Then, the third ink is dried (S8) and baked (S9) to form the second light-emitting layer EML2 and the third light-emitting layer EML3, as shown in FIG. Figure 5 Although the third ink is described in this specification for convenience, the second light-emitting layer EML2 may be formed using a 3-1 ink containing first quantum dots (red quantum dots), and the third light-emitting layer EML3 may be formed using a 3-2 ink containing second quantum dots (green quantum dots). In this case, no light-emitting layer is formed in the first opening OP1.

[0106] Then, a fourth ink (e.g., a fourth ink composition) for forming the second electron transport layer ETL2 and the third electron transport layer ETL3 is discharged on the second light emitting layer EML2 and the third light emitting layer EML3 (S10). The fourth ink is dried (S11) and baked (S12) to form the second electron transport layer ETL2 and the third electron transport layer ETL3, as shown in FIG. Figure 6 Although the fourth ink is described herein for convenience, the second electron transport layer ETL2 and the third electron transport layer ETL3 may include different materials according to one or more embodiments, or may include the same material (for example, including ZnMgO). In this case, no electron transport layer is formed in the first opening OP1.

[0107] After forming the second electron transport layer ETL2 and the third electron transport layer ETL3 in the second opening OP2 and the third opening OP3, a fifth ink (e.g., a fifth ink composition) containing a hole transport material is ejected (e.g., discharged) in the first opening OP1 (S13). Then, the fifth ink is dried (S14) and baked (S15) to form a first hole transport layer HTL1 on the first hole injection layer HIL1. Figure 7 As shown in .

[0108] Next, a sixth ink (e.g., a sixth ink composition) containing a blue light emitting material is discharged onto the first hole transport layer HTL1 (S16). Then, the sixth ink is dried (S17) and baked (S18) to form a first light emitting layer EML1 located on the first hole transport layer HTL1, as shown in FIG. Figure 8 Next, a seventh ink (e.g., a seventh ink composition) containing a first electron transport material is discharged onto the first light-emitting layer EML1 (S19). Then, the seventh ink is dried (S20) and baked (S21) to form a first electron transport layer ETL1 located on the first light-emitting layer EML1, as shown in FIG. Figure 9 As shown in . At this time, the first electron transport layer ETL1 may include an electron transport material different from the second electron transport layer ETL2 and the third electron transport layer ETL3. As an example, the second electron transport layer ETL2 and the third electron transport layer ETL3 may include an inorganic electron transport material, and the first electron transport layer ETL1 may include an organic electron transport material.

[0109] Then, if Figure 10 As shown in FIG, the second electrode E2 is deposited to substantially overlap the entire surface of the substrate SUB (S22). The second electrode E2 may be continuously deposited over substantially the entire surface of the substrate SUB. The second electrode E2 may continuously overlap the first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3.

[0110] Then, an encapsulation layer ENC is formed on the second electrode E2 to manufacture Figure 1 A display device having the structure shown in FIG.

[0111] According to the manufacturing method of the display device of one or more embodiments, after manufacturing the second electron transport layer of the second light-emitting element and the third electron transport layer of the third light-emitting element, a subsequent structure including the first hole transport layer of the first light-emitting element is stacked (sequentially deposited). As in one or more embodiments, if (for example, when) the first light-emitting layer includes an organic polymer material and the second and third light-emitting layers include quantum dots, scattering (or cross contamination) may be generated on the surface of each layer between adjacent light-emitting regions (RLA, GLA, and BLA), and alternatively, there may be a problem in which the characteristics of the light-emitting element are damaged by the dissolved surface (for example, by the composition used to dissolve the adjacent light-emitting layer). For example, this problem of surface property degradation occurs at the interface between the hole transport layer and the light-emitting layer. In other words, if the first light-emitting layer includes an organic polymer material and the second and third light-emitting layers include quantum dots, scattering (or cross contamination) may occur on the surface of each layer between adjacent light-emitting regions (RLA, GLA, and BLA). In addition, the characteristics of the light-emitting element may be damaged by the dissolved surface (for example, by the composition used to dissolve the adjacent light-emitting layer). This problem of surface property degradation occurs particularly at the interface between the hole transport layer and the light-emitting layer.

[0112] However, according to one or more embodiments, the first light-emitting element comprising an organic polymer material is manufactured after first manufacturing the second and third light-emitting elements comprising quantum dots, thereby minimizing or reducing the effects of dissolution and / or scattering on the surface, thereby providing a light-emitting element with improved reliability. That is, in one or more embodiments, the first light-emitting element comprising an organic polymer material is manufactured after the second and third light-emitting elements comprising quantum dots. This sequence minimizes or reduces the effects of dissolution and / or scattering on the surface, thereby enhancing the reliability of the light-emitting element.

[0113] In the following, reference will be made to Figures 11 to 20 A method of manufacturing a display device according to one or more embodiments is described. Figure 11 is a flowchart of a method of manufacturing some components of a display device according to one or more embodiments, and Figures 12 to 20 is a cross-sectional view of a manufacturing process of a display device according to one or more embodiments.

[0114] In the following, reference will be made to Figures 11 to 20 Together Figure 1 A method of manufacturing a display device according to one or more embodiments will be described. Descriptions of components identical to those described above will not be provided.

[0115] like Figure 12As shown in FIG, a spacer PDL having openings OP1 , OP2 , and OP3 exposing the first electrodes E1 a , E1 b , and E1 c , respectively, is formed on the first electrodes E1 a , E1 b , and E1 c .

[0116] Then, if Figure 13 As shown in FIG, a first ink for forming hole injection layers HIL1, HIL2, and HIL3 is discharged into each of the openings OP1, OP2, and OP3 of the partition PDL (S1). Then, the discharged first ink is dried (S2) and baked (S3) to form the first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3, as shown in FIG. Figure 13 Although the present specification describes the first ink for convenience, each of the first hole injection layer HIL1, the second hole injection layer HIL2, and the third hole injection layer HIL3 may include the same hole injection material or may include different hole injection materials.

[0117] Next, the fifth ink containing the hole transport material is discharged into the first opening OP1 (S4). Then, the fifth ink is dried (S5) and baked (S6) to form the first hole transport layer HTL1 on the first hole injection layer HIL1. Figure 14 At this time, the hole transport layer is not formed in the second opening OP2 and the third opening OP3.

[0118] Next, a sixth ink containing a blue light emitting material is discharged onto the first hole transport layer HTL1 (S7). Then, the sixth ink is dried (S8) and baked (S9) to form a first light emitting layer EML1 on the first hole transport layer HTL1. Figure 15 At this time, no light emitting layer is formed in the second opening OP2 and the third opening OP3.

[0119] Next, a seventh ink containing a first electron transport material is discharged onto the first light emitting layer EML1 (S10). Then, the seventh ink is dried (S11) and baked (S12) to form a first electron transport layer ETL1 located on the first light emitting layer EML1. Figure 16 At this time, no electron transport layer is formed in the second opening OP2 and the third opening OP3.

[0120] Then, the second ink for forming the second hole transport layer HTL2 and the third hole transport layer HTL3 is discharged on the second hole injection layer HIL2 and the third hole injection layer HIL3 (S13). Then, the discharged second ink is dried (S14) and baked (S15) to form the second hole transport layer HTL2 and the third hole transport layer HTL3, as shown in FIG. Figure 17Although the present specification describes the second ink for the sake of convenience, the second hole transport layer HTL2 and the third hole transport layer HTL3 may each include the same hole transport material or different hole transport materials.

[0121] Next, a third ink for forming the second light emitting layer EML2 and the third light emitting layer EML3 is discharged on the second hole transport layer HTL2 and the third hole transport layer HTL3 (S16). Then, the third ink is dried (S17) and baked (S18) to form the second light emitting layer EML2 and the third light emitting layer EML3. Figure 18 Although the present specification describes the third ink for convenience, the second light-emitting layer EML2 may be formed using a 3-1 ink including first quantum dots (red quantum dots), and the third light-emitting layer EML3 may be formed using a 3-2 ink including second quantum dots (green quantum dots).

[0122] Then, a fourth ink for forming the second electron transport layer ETL2 and the third electron transport layer ETL3 is discharged on the second light emitting layer EML2 and the third light emitting layer EML3 (S19). The fourth ink is dried (S20) and baked (S21) to form the second electron transport layer ETL2 and the third electron transport layer ETL3. Figure 19 . Although the fourth ink is described in this specification for convenience, the second electron transport layer ETL2 and the third electron transport layer ETL3 may include different materials according to one or more embodiments, or may include the same material (for example, including ZnMgO). In this case, the first electron transport layer ETL1 may include an electron transport material different from that of the second electron transport layer ETL2 and the third electron transport layer ETL3. As an example, the second electron transport layer ETL2 and the third electron transport layer ETL3 may include an inorganic electron transport material, and the first electron transport layer ETL1 may include an organic electron transport material.

[0123] Then, if Figure 20 As shown in FIG, the second electrode E2 is deposited to substantially overlap the entire surface of the substrate SUB (S22). The second electrode E2 may be continuously deposited over substantially the entire surface of the substrate SUB. The second electrode E2 may continuously overlap the first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3. Then, an encapsulation layer ENC is formed on the second electrode E2 to manufacture a substrate having Figure 1 A display device having the structure shown in FIG.

[0124] According to the manufacturing method of the display device of one or more embodiments, after the layers up to the first electron transport layer of the first light-emitting element are manufactured, a subsequent structure including a second hole transport layer of the second light-emitting element and a third hole transport layer of the third light-emitting element is stacked (for example, sequentially deposited). As in one or more embodiments, if (for example, when) the first light-emitting layer includes an organic polymer material and the second light-emitting layer and the third light-emitting layer include quantum dots, scattering (or cross-contamination) may be generated on the surface of each layer between adjacent light-emitting regions (RLA, GLA and BLA), and alternatively, there may be a problem that the characteristics of the light-emitting element are damaged by the dissolved surface (for example, by the composition used for the adjacent light-emitting layer). For example, a problem of surface property degradation occurs at the interface between the hole transport layer and the light-emitting layer.

[0125] However, according to one or more embodiments, a first light-emitting element comprising an organic polymer material is first manufactured, and then a second light-emitting element and a third light-emitting element comprising quantum dots are manufactured. Thus, exposure to the interface between the hole transport layer and the light-emitting layer, which are formed of different materials, can be minimized or reduced. Consequently, a light-emitting element with improved reliability can be provided by minimizing or reducing the effects of dissolution and / or scattering on the surface of the hole transport layer.

[0126] As used herein, the singular forms "a," "an," "one," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. When describing embodiments of the present inventive concept, the use of "may" means "one or more embodiments of the present inventive concept."

[0127] As used herein, the terms "use," "using," and "used" may be understood as synonymous with the terms "utilize," "utilizing," and "utilized," respectively. As used herein, expressions such as "at least one of," "one of," and "selected from," when preceding / preceding a list of elements, modify the elements of the entire list rather than modifying the individual elements of the list. For example, "at least one selected from a, b, and c" and "at least one of a, b, and c" may mean only a, only b, only c, both a and b (e.g., a and b are present at the same time), both a and c (e.g., b and c are present at the same time), both b and c (e.g., b and c are present at the same time), all of a, b, and c, or variations thereof.

[0128] In the present disclosure, when a point, a particle, a point particle, etc. is spherical, "diameter" or "particle size" means the particle diameter or the average particle diameter, and when the particle is non-spherical, "diameter" or "particle size" means the major axis length or the average major axis length. The diameter (or size) of the particle can be measured using a scanning electron microscope or a particle size analyzer. As a particle size analyzer, for example, a HORIBA LA-950 laser particle size analyzer can be used. When the size of the particle is measured using a particle size analyzer, the average particle diameter (or size) is referred to as D50. D50 refers to the average diameter (or size) of the particles whose cumulative volume corresponds to 50% by volume in a particle size distribution (e.g., cumulative distribution), and refers to a value of the particle size corresponding to 50% starting from the smallest particle when the total number of particles is 100% in a distribution curve accumulated in the order of the smallest particle size to the largest particle size.

[0129] As used herein, the terms "substantially," "about," and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values ​​that would be recognized by one of ordinary skill in the art. In view of the measurements in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system), "about" or "approximately" as used herein are inclusive of the stated value and mean within an acceptable deviation range for the particular value as determined by one of ordinary skill in the art. For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0130] In addition, any numerical range described herein is intended to include all subranges of the same numerical precision contained within the described range. For example, the range of "1.0 to 10.0" is intended to include all subranges between the described minimum value of 1.0 and the described maximum value of 10.0 (including this number), that is, for example, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit described herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit described in this specification is intended to include all higher numerical limits contained therein. Therefore, the applicant reserves the right to amend this specification, including the claims, to clearly describe any subranges contained within the range explicitly described herein.

[0131] Here, unless otherwise defined, the listing of steps, tasks, or actions in a particular order does not necessarily mean that the invention or claims require that particular order. That is, as a general rule, unless the steps, tasks, or actions of a method (e.g., a method claim) do recite an order, the steps, tasks, or actions should not be construed as requiring an order.

[0132] The display manufacturing device, display device and / or any other related device or component according to the embodiments of the present invention described herein can be implemented using any appropriate hardware, firmware (e.g., a dedicated integrated circuit), software, or a combination of software, firmware, and hardware. For example, the various components of the device can be formed on an integrated circuit (IC) chip or on a separate IC chip. In addition, the various components of the device can be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on a substrate. In addition, the various components of the device can be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system components for performing the various functions described herein. The computer program instructions are stored in a memory that can be implemented in a computing device using, for example, a standard storage device, such as a random access memory (RAM). The computer program instructions can also be stored, for example, in other non-temporary computer-readable media, such as a CD-ROM, a flash drive, etc. In addition, those skilled in the art will recognize that, without departing from the scope of this disclosure, the functions of the various computing devices can be combined or integrated into a single computing device, or the functions of a particular computing device can be distributed to one or more other computing devices.

[0133] Considering the entire content of this disclosure, it will be understood by those skilled in the art that each suitable feature of the various embodiments of the present disclosure may be combined in part or in whole or in combination with each other, and may be technically interlocked and operated in various suitable ways, and each embodiment may be implemented independently of each other or in combination with each other in any suitable manner, unless otherwise stated or implied.

[0134] Although one or more embodiments of the present disclosure have been described above in more detail, the scope of the present disclosure is not limited thereto, and those skilled in the art may make one or more suitable modifications and improvements using the basic concepts of the present disclosure defined in the appended claims and their equivalents.

[0135] Reference numerals

[0136] E1a, E1b, E1c: First electrode

[0137] HIL1, HIL2, HIL3: hole injection layer

[0138] HTL1, HTL2, HTL3: hole transport layer

[0139] EML1, EML2, EML3: light-emitting layers

[0140] ETL1, ETL2, ETL3: Electron Transport Layer

[0141] E2: Second electrode

Claims

1. A method for manufacturing a display device, comprising: forming a plurality of first electrodes on a substrate; forming a first hole injection layer, a second hole injection layer, or a third hole injection layer on a corresponding one of the plurality of first electrodes; forming a second hole transport layer and a third hole transport layer on the second hole injection layer and the third hole injection layer, respectively; forming a second light-emitting layer and a third light-emitting layer on the second hole transport layer and the third hole transport layer, respectively; as well as After forming the second light-emitting layer and the third light-emitting layer, a first hole transport layer and a first light-emitting layer are sequentially formed on the first hole injection layer. wherein each of the second light-emitting layer and the third light-emitting layer comprises quantum dots, and The first light emitting layer includes an organic material.

2. The method according to claim 1, further comprising: After forming the second light-emitting layer and the third light-emitting layer, a second electron transport layer and a third electron transport layer are formed on the second light-emitting layer and the third light-emitting layer, respectively.

3. The method according to claim 2, wherein: After forming the second electron transport layer and the third electron transport layer, the first hole transport layer and the first light emitting layer are sequentially formed.

4. The method according to claim 3, further comprising: A first electron transport layer is formed on the first light emitting layer.

5. The method according to claim 1, wherein: The display device includes: A blue light-emitting region overlapping with the first light-emitting layer; A red light-emitting region overlapping with the second light-emitting layer; and a green light-emitting region overlapping with the third light-emitting layer, and The method further includes forming a partition between adjacent light emitting regions selected from the blue light emitting region, the red light emitting region, and the green light emitting region.

6. The method according to claim 5, wherein: The first hole injection layer, the second hole injection layer, and the third hole injection layer are spaced apart from each other with respect to the separator, and The first hole transport layer, the second hole transport layer, and the third hole transport layer are spaced apart from each other with respect to the separator.

7. The method according to claim 5, further comprising: A second electrode is formed that is continuously positioned on the first light emitting layer, the second light emitting layer, and the third light emitting layer.

8. The method according to claim 1, wherein: The organic material of the first light-emitting layer includes an organic polymer material, The quantum dots of the second light-emitting layer include red quantum dots, and The quantum dots of the third light-emitting layer include green quantum dots.

9. The method according to claim 4, wherein: The second electron transport layer and the third electron transport layer each include ZnMgO.

10. The method according to claim 9, wherein: The first electron transport layer includes an organic electron transport material.

11. A method for manufacturing a display device, comprising: forming a plurality of first electrodes on a substrate; forming a first hole injection layer, a second hole injection layer, or a third hole injection layer on a corresponding one of the plurality of first electrodes, and forming a first hole transport layer on the first hole injection layer; forming a first light-emitting layer on the first hole transport layer; After forming the first light-emitting layer, forming a second hole transport layer and a third hole transport layer on the second hole injection layer and the third hole injection layer respectively; as well as A second light-emitting layer and a third light-emitting layer are formed on the second hole transport layer and the third hole transport layer, respectively.

12. The method according to claim 11, further comprising: After forming the first light-emitting layer, a first electron transport layer is formed on the first light-emitting layer.

13. The method according to claim 12, wherein: The second hole transport layer and the third hole transport layer are formed after the first electron transport layer is formed.

14. The method according to claim 13, further comprising: A second electron transport layer and a third electron transport layer are formed on the second light emitting layer and the third light emitting layer, respectively.

15. The method according to claim 14, further comprising: A second electrode is formed that is continuously positioned on the first electron transport layer, the second electron transport layer, and the third electron transport layer.

16. The method of claim 11, wherein: The display device includes: A blue light-emitting region overlapping with the first light-emitting layer; A red light-emitting region overlapping with the second light-emitting layer; and a green light-emitting region overlapping with the third light-emitting layer, and The method further comprises: A partition is formed between adjacent light emitting regions selected from the blue light emitting region, the red light emitting region, and the green light emitting region.

17. The method according to claim 16, wherein: The first hole injection layer, the second hole injection layer, and the third hole injection layer are spaced apart from each other with respect to the separator, and The first hole transport layer, the second hole transport layer, and the third hole transport layer are spaced apart from each other with respect to the separator.

18. The method of claim 11, wherein: The first light-emitting layer includes an organic material, The second light-emitting layer includes first quantum dots, and The third light-emitting layer includes second quantum dots.

19. The method of claim 14, wherein: The second electron transport layer and the third electron transport layer each include ZnMgO.

20. The method of claim 19, wherein: The first electron transport layer includes an organic electron transport material.

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