Preparation method and system of ferrite isolator and microwave system
By forming an undercut structure on the ferrite substrate and preparing a resistive layer and a composite metal layer, the problem of excessive resistance value in the preparation of the resistive layer is solved, and the radio frequency performance and yield of the isolator are improved.
Patent Information
- Application Number
- CN202510642432.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-19
- Publication Date
- 2025-08-26
AI Technical Summary
In the prior art, the forward patterning preparation of the resistive layer of the ferrite isolator during the thin film metallization process can easily lead to excessive resistance values, affect the RF performance of the product, and reduce the yield rate.
The physical deposition method is used to form an undercut structure on the surface of the ferrite substrate, and a target resistive layer is prepared, and a composite metal layer is formed thereon. The target isolator is obtained through unitization processing to avoid the influence of forward patterned etching on the resistance.
Ensure the accuracy of the initial resistance value of the isolator, improve RF performance, and improve product yield.
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Figure CN120545656A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of isolator preparation, and in particular to a preparation method and system for a ferrite isolator, and a microwave system. Background Art
[0002] Microwave ferrite isolators control the transmission of microwave signals through ferrite and are widely used to protect high-power RF sources. To prevent instability and even burnout caused by load changes due to reflected power, isolators are used between antennas and transmitters, or between several communication and radar systems, to absorb reflected power and protect the power supply.
[0003] At present, the resistor layer in the thin-film metallization of isolators is usually prepared by forward patterning. However, since the ferrite substrate itself is brittle, fragile, and has many surface pits, the etching of the resistor film layer during the process of preparing the resistor layer by forward patterning will affect the ferrite substrate, which can easily cause the resistance value to be out of tolerance, thereby affecting the product's RF performance and reducing the yield of the isolator product. Summary of the Invention
[0004] In order to solve the above technical problems, the embodiments of the present application provide a method and system for preparing a ferrite isolator, and a microwave system.
[0005] In a first aspect, in order to solve the above technical problems, the present application provides a method for preparing a ferrite isolator, comprising:
[0006] forming an undercut structure on the surface of the ferrite substrate based on a preset target product unit range;
[0007] Prepare a target resistance layer on the undercut structure by a physical deposition method;
[0008] preparing a composite metal layer on the target resistance layer, and obtaining an initial product structure based on the ferrite substrate, the target resistance layer and the composite metal layer;
[0009] The initial product structure is unitized based on the target product unit range to obtain a target isolator.
[0010] The beneficial effects are:
[0011] In the technical solution provided in the embodiments of the present application, an undercut structure is formed on the surface of a ferrite substrate based on a preset target product unit range; a target resistor layer is prepared on the undercut structure by physical deposition; a composite metal layer is then prepared on the target resistor layer, and an initial product structure is obtained based on the ferrite substrate, the target resistor layer, and the composite metal layer; the initial product structure is unitized based on the grooves to obtain a target isolator. Thus, the present application constructs the target resistor layer by forming a film before configuring the composite metal layer, which not only ensures the accuracy of the initial resistance value of the isolator, but also avoids the impact of forward patterning etching on the resistance, thereby better controlling the preparation of the isolator resistance, obtaining an isolator with good RF performance and qualified resistance value, and improving the product yield.
[0012] In a second aspect, the present invention provides a microwave system, comprising a target isolator prepared by the above-mentioned method for preparing a ferrite isolator, for isolating reflected signals and protecting circuits.
[0013] In a third aspect, the present application further provides a system for preparing a ferrite isolator, comprising a cutting unit, a resistance layer preparation unit, a composite metal layer preparation unit, and a structuring processing unit;
[0014] a cutting unit, configured to form an undercut structure on the surface of the ferrite substrate based on a preset target product unit range;
[0015] a resistance layer preparation unit, configured to prepare a target resistance layer on the undercut structure by a physical deposition method;
[0016] a composite metal layer preparation unit, configured to prepare a composite metal layer on the target resistance layer, and obtain an initial product structure based on the ferrite substrate, the target resistance layer, and the composite metal layer;
[0017] A structural processing unit is used to perform unit processing on the initial product structure based on the target product unit range to obtain a target isolator.
[0018] In a fourth aspect, the present application also provides an electronic device comprising: one or more processors; a storage device for storing one or more programs, wherein when the one or more programs are executed by the one or more processors, the electronic device implements the method for preparing the ferrite isolator as described above.
[0019] In a fifth aspect, the present application further provides a computer-readable storage medium having computer-readable instructions stored thereon. When the computer-readable instructions are executed by a processor of a computer, the computer executes the method for preparing the ferrite isolator as described above.
[0020] In a sixth aspect, the present application further provides a computer program product or computer program, comprising computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform the method for preparing a ferrite isolator provided in the various optional embodiments described above.
[0021] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The accompanying drawings are incorporated into and constitute a part of the specification, illustrating embodiments consistent with the present application and, together with the specification, serving to explain the principles of the present application. It is obvious that the drawings described below are merely some embodiments of the present application, and a person of ordinary skill in the art can derive other drawings based on these drawings without inventive effort. In the drawings:
[0023] Figure 1 This is a flow chart of a method for preparing a ferrite isolator shown in an exemplary embodiment of the present application;
[0024] Figure 2 is a schematic diagram showing an exemplary embodiment of the present application showing a method for preparing a ferrite isolator to produce an isolator;
[0025] Figure 3 is a block diagram of a system for preparing a ferrite isolator shown in an exemplary embodiment of the present application;
[0026] Figure 4 It is a structural diagram of a computer system suitable for implementing the electronic device of the embodiment of the present application. DETAILED DESCRIPTION
[0027] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. When the following description refers to the drawings, identical numerals in different figures represent identical or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
[0028] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically separate entities. That is, these functional entities may be implemented in software, in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.
[0029] The flowcharts shown in the accompanying drawings are for illustrative purposes only and do not necessarily include all contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may be decomposed, while others may be combined or partially combined. Therefore, the actual execution order may vary depending on the actual situation.
[0030] In this application, "plurality" refers to two or more. "And / or" describes the relationship between related objects, indicating that three possible relationships exist. For example, "A and / or B" can mean: A exists alone, A and B exist simultaneously, and B exists alone. The character " / " generally indicates that the related objects are in an "or" relationship.
[0031] In order to solve the problem that the resistance layer in the thin film metallization of the isolator is easily prepared by forward patterning, which easily causes excessive resistance and thus affects the RF performance of the product, the embodiments of the present application propose a preparation method and device for a ferrite isolator, an electronic device, and a computer-readable storage medium, which mainly involve the preparation technology of ferrite isolators included in the isolation component preparation technology. These embodiments will be described in detail below.
[0032] First see Figure 1 , Figure 1 FIG. 1 is a flow chart of a method for preparing a ferrite isolator according to an exemplary embodiment of the present invention. Figure 1 As shown, in an exemplary embodiment, the method for preparing the ferrite isolator may include steps S101 to S104, which are described in detail as follows:
[0033] Step S101 : forming an undercut structure on the surface of a ferrite substrate based on a preset target product unit range.
[0034] Step S102 : preparing a target resistance layer on the undercut structure by a physical deposition method.
[0035] Step S103 : preparing a composite metal layer on the target resistance layer, and obtaining an initial product structure based on the ferrite substrate, the target resistance layer and the composite metal layer.
[0036] Step S104: Unitize the initial product structure based on the target product unit range to obtain a target isolator.
[0037] As can be seen from the above, in the method provided in this embodiment, first, an undercut structure is formed on the surface of the ferrite substrate based on a preset target product unit range, and a target resistor layer is prepared on the undercut structure by a physical deposition method. Thus, the target resistor layer is constructed by first forming a film, which can ensure the accuracy of the initial resistance of the isolator and improve the performance of the subsequently generated isolator. Afterwards, a composite metal layer is prepared on the target resistor layer, and the initial product structure is obtained based on the ferrite substrate, the target resistor layer and the composite metal layer, that is, graphic etching is performed only when the composite metal layer is configured, thereby avoiding the impact of forward graphic etching on the resistance. Finally, the initial product structure is unitized based on the groove to obtain the target isolator. Through this application, the preparation of the isolator resistor can be better controlled, and an isolator with good RF performance and qualified resistance can be obtained, thereby improving the product yield.
[0038] In an exemplary embodiment of the present application, the specific steps of forming an undercut structure on the surface of a ferrite substrate may include:
[0039] Cutting grooves on the surface of the ferrite substrate based on a preset target product unit range;
[0040] A resistance region located between the grooves is obtained, and a mask layer is prepared on the ferrite substrate based on the resistance region to form an undercut structure.
[0041] In this embodiment, an undercut structure is formed on the surface of a ferrite substrate using a stripping mask exposure method. Specifically, the dimensions and related parameters of the isolator to be produced are first determined, thereby determining a corresponding preset target product unit range. This target product unit range corresponds to the dimensions of the isolator. Next, grooves are cut into the surface of the ferrite substrate using a laser or other method based on the target product unit range. Based on the dimensions and related parameters of the isolator to be produced, the resistor region located between the grooves is determined. A mask layer is then formed on the ferrite substrate in areas other than the resistor region, thereby forming the undercut structure and leaving the resistor region free for configuration of the resistor layer.
[0042] Furthermore, in this embodiment, the difference between the size of the resistor region and the target size of the target resistor layer corresponding to the isolator to be produced is 20 μm, making the region larger than the target size. This means that the resistor region is 20 μm larger than the actual size, leaving room for resistor fabrication and minimizing any impact on the isolator's resistance.
[0043] In another exemplary embodiment, the specific steps of preparing a target resistance layer on the undercut structure having a resistance region may include:
[0044] forming a resistive layer thin film on the undercut structure by a physical deposition method;
[0045] The resistance layer film and the mask layer film corresponding to the mask area of the mask layer are removed to form a target resistance layer corresponding to the resistance area on the ferrite substrate.
[0046] In this embodiment, a sputtering method including PVD (Physical Vapor Deposition) technology is used to form a resistor layer film on the undercut structure. After the material for preparing the resistor is deposited in the resistor area, the resistor layer film and the mask layer film corresponding to the mask area of the mask layer are removed, thereby forming a target resistor layer corresponding to the resistor area on the ferrite substrate.
[0047] In another exemplary embodiment, before obtaining the target resistance layer, it is necessary to remove the remaining mask layer film on the surface of the ferrite substrate. The specific steps may include:
[0048] Stripping the resistor layer film and the mask layer film corresponding to the mask area of the mask layer to obtain a stripped intermediate product;
[0049] The mask layer of the peeled intermediate product is removed by a debonding solution at a preset temperature to form a target resistance layer corresponding to the resistance area on the ferrite substrate.
[0050] In this embodiment, after removing the resistive layer film and the mask layer film corresponding to the mask region of the mask layer, the remaining mask layer film on the surface of the ferrite substrate is removed by immersion. Specifically, the stripped intermediate product is immersed in a degumming solution at a preset temperature. After removing the remaining mask layer film, the target resistive layer corresponding to the resistive region on the ferrite substrate is obtained. The preset temperature range is 60-90°C.
[0051] In this way, the present application uses the above-mentioned embodiment to construct the target resistance layer before imaging by using the pre-film forming method, which can ensure the accuracy of the initial resistance value of the isolator and improve the performance of the subsequently generated isolator.
[0052] In an exemplary embodiment of the present application, the specific steps of preparing a composite metal layer on a target resistance layer may include:
[0053] sputtering a preset composite metal layer film on the target resistor layer by a physical deposition method;
[0054] The composite metal layer film is subjected to metal imaging processing to obtain a composite metal layer.
[0055] In this embodiment, the type of composite material of the preset composite metal layer film is first determined based on information such as the functional requirements of the isolator to be produced, and then a layer of composite metal layer film is sputtered above the target resistance layer by a physical deposition method, and then the composite metal layer film is subjected to metal imaging processing to obtain a composite metal layer.
[0056] In another exemplary embodiment, the composite metal layer film is subjected to metal patterning processing using photolithography and etching technology, and the specific steps may include:
[0057] The composite metal layer film is subjected to metal imaging processing based on a preset image through photolithography and etching technology to obtain a composite metal layer.
[0058] In this way, the present application uses the above-mentioned embodiment to sputter and configure a preset composite metal layer film after preparing the target resistance layer, and performs metal imaging processing to obtain a composite metal layer, thereby avoiding the impact of graphical etching on the resistance and improving the performance and reliability of the isolator.
[0059] In an exemplary embodiment of the present application, the specific steps of unitizing the initial product structure to obtain the target isolator may include:
[0060] The initial product structure is cut using a dicing machine based on the target product unit range to complete the unitization processing of the initial product structure and obtain the target isolator.
[0061] In this embodiment, the cutting of the initial product structure is performed according to the grooves formed based on the unit range of the target product. After cutting, it matches the size of the isolator to be produced, thereby completing the unitization processing of the initial product structure and obtaining the target isolator. Afterwards, in the specific production process, it is also necessary to go through sorting, special inspection, packaging and warehousing and other production steps to obtain the isolator that is finally put into use.
[0062] In this way, the present application can better control the preparation of the isolator resistor through the above embodiments, obtain an isolator with good radio frequency performance and qualified resistance value, and improve the product yield.
[0063] See also Figure 2 , Figure 2 FIG. 1 is a schematic diagram showing an exemplary embodiment of the present application showing a method for producing an isolator based on a ferrite isolator. Figure 2As shown, first, grooves are cut on the surface of a ferrite substrate based on the preset target product unit range. A mask layer is prepared on the ferrite substrate based on the resistor area located between the grooves, forming an undercut structure. A resistor layer film is then formed on the undercut structure using a physical deposition method. The resistor layer film and the mask layer film corresponding to the mask area of the mask layer are removed to form a target resistor layer corresponding to the resistor area on the ferrite substrate. A preset composite metal layer film is then sputtered over the target resistor layer using a physical deposition method. The composite metal layer film is subjected to metal imaging to obtain a composite metal layer. Finally, a dicing machine is used to unitize the initial product structure to obtain the target isolator, completing the isolator metallization preparation.
[0064] In an exemplary embodiment of the present application, the target isolator prepared by the method for preparing a ferrite isolator provided in the present application is applied to a microwave system to isolate reflected signals and protect circuits.
[0065] Figure 3 FIG. 9 is a block diagram of a system 900 for preparing a ferrite isolator according to an exemplary embodiment of the present application. Figure 3 As shown, the system includes:
[0066] A cutting unit 301 is configured to form an undercut structure on the surface of the ferrite substrate based on a preset target product unit range;
[0067] A resistor layer preparation unit 302 is used to prepare a target resistor layer on the undercut structure by physical deposition;
[0068] The composite metal layer preparation unit 303 is used to prepare a composite metal layer on the target resistor layer, and obtain an initial product structure based on the ferrite substrate, the target resistor layer and the composite metal layer;
[0069] The structural processing unit 304 is used to perform unit processing on the initial product structure based on the grooves to obtain a target isolator.
[0070] The system uses the preparation method of the ferrite isolator provided by the present application. First, the cutting unit 301 forms an undercut structure on the surface of the ferrite substrate based on the preset target product unit range, and the resistance layer preparation unit 302 uses a physical deposition method to prepare a target resistance layer on the undercut structure. Thus, by first forming the target resistance layer in a film-forming manner, the accuracy of the initial resistance value of the isolator can be ensured, and the performance of the subsequently generated isolator can be improved. Afterwards, the composite metal layer preparation unit 303 prepares a composite metal layer on the target resistance layer, and obtains the initial product structure based on the ferrite substrate, the target resistance layer and the composite metal layer. That is, the graphic etching is performed only when the composite metal layer is configured, avoiding the impact of the forward graphic etching on the resistance. Finally, the structural processing unit 304 performs unit processing on the initial product structure based on the groove to obtain the target isolator. Through this application, the preparation of the isolator resistor can be better controlled, and an isolator with good RF performance and qualified resistance value can be obtained, thereby improving the product yield.
[0071] In another exemplary embodiment, the cutting unit 301 is also used to cut grooves on the surface of the ferrite substrate based on a preset target product unit range; obtain the resistance area located between the grooves, and prepare a mask layer on the ferrite substrate based on the resistance area to form a bottom cut structure.
[0072] In another exemplary embodiment, the resistance layer preparation unit 302 is also used to form a resistance layer film on the bottom cut structure by a physical deposition method; the resistance layer film and the mask layer film corresponding to the mask area of the mask layer are removed to form a target resistance layer corresponding to the resistance area on the ferrite substrate.
[0073] In another exemplary embodiment, the resistance layer preparation unit 302 is also used to peel off the resistance layer film and the mask layer film corresponding to the mask area of the mask layer to obtain a peeled intermediate product; the mask layer of the peeled intermediate product is removed by a degumming liquid at a preset temperature to form a target resistance layer corresponding to the resistance area on the ferrite substrate.
[0074] In another exemplary embodiment, the composite metal layer preparation unit 303 is further used to sputter a preset composite metal layer film above the target resistance layer by a physical deposition method; and perform metal imaging processing on the composite metal layer film to obtain a composite metal layer.
[0075] In another exemplary embodiment, the composite metal layer preparation unit 303 is further configured to perform metal imaging processing on the composite metal layer film based on a preset image by using a photolithography and etching technology to obtain a composite metal layer.
[0076] In another exemplary embodiment, the structuring processing unit 304 is further configured to utilize a dicing machine to perform cutting based on the grooves to complete the unitization processing of the initial product structure and obtain a target isolator.
[0077] It should be noted that the ferrite isolator manufacturing system provided in the above-mentioned embodiment and the ferrite isolator manufacturing method provided in the above-mentioned embodiment are based on the same concept. The specific manner in which the various modules and units perform their operations has been described in detail in the method embodiments and will not be repeated here. In actual applications, the ferrite isolator manufacturing system provided in the above-mentioned embodiment can, as needed, allocate the aforementioned functions to different functional modules, i.e., divide the system's internal structure into different functional modules to perform all or part of the functions described above. This is not a limitation herein.
[0078] An embodiment of the present application also provides an electronic device, comprising: one or more processors; a storage device for storing one or more programs, wherein when the one or more programs are executed by the one or more processors, the electronic device implements the method for preparing the ferrite isolator provided in each of the above embodiments.
[0079] Figure 4 The following is a schematic diagram showing the structure of a computer system suitable for implementing an electronic device according to an embodiment of the present application. Figure 4 The computer system 400 of the electronic device shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.
[0080] like Figure 4 As shown, computer system 400 includes a central processing unit (CPU) 401, which can perform various appropriate actions and processes according to programs stored in read-only memory (ROM) 402 or programs loaded from storage unit 408 into random access memory (RAM) 403, such as executing the methods in the above embodiments. Various programs and data required for system operation are also stored in RAM 403. CPU 401, ROM 402, and RAM 403 are connected to each other via bus 404. Input / output (I / O) interface 405 is also connected to bus 404.
[0081] The following components are connected to the I / O interface 405: an input section 406 including a keyboard, a mouse, and the like; an output section 407 including devices such as a cathode ray tube (CRT), a liquid crystal display (LCD), and a speaker; a storage section 408 including a hard disk; and a communication section 409 including a network interface card such as a LAN (Local Area Network) card or a modem. The communication section 409 performs communication processing via a network such as the Internet. A drive 410 is also connected to the I / O interface 405 as needed. Removable media 411, such as a magnetic disk, an optical disk, a magneto-optical disk, or a semiconductor memory, is installed in the drive 410 as needed, so that computer programs read from the removable media can be installed in the storage section 408 as needed.
[0082] In particular, according to an embodiment of the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, an embodiment of the present application includes a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a computer program for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network via the communication section 409, and / or installed from a removable medium 411. When the computer program is executed by the central processing unit (CPU) 401, the various functions defined in the system of the present application are executed.
[0083] It should be noted that the computer-readable medium shown in the embodiments of the present application can be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable storage medium can be, for example, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media can include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM), a flash memory, an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable signal medium can include a data signal propagated in baseband or as part of a carrier wave, which carries a computer-readable computer program. This propagated data signal can take a variety of forms, including but not limited to an electromagnetic signal, an optical signal, or any suitable combination of the above. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium that can transmit, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. A computer program embodied on a computer-readable medium may be transmitted using any suitable medium, including but not limited to wireless, wired, or any suitable combination thereof.
[0084] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present application. Among them, each box in the flowchart or block diagram can represent a module, program segment, or part of the code, and the above-mentioned module, program segment, or part of the code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram or flowchart, and the combination of boxes in the block diagram or flowchart, can be implemented with a dedicated hardware-based system that performs the specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.
[0085] The units involved in the embodiments described in this application may be implemented by software or hardware, and the units described may also be set in a processor. In some cases, the names of these units do not constitute limitations on the units themselves.
[0086] Another aspect of the present application provides a computer-readable storage medium having a computer program stored thereon. When executed by a processor, the computer program implements the aforementioned method for preparing a ferrite isolator. The computer-readable storage medium may be included in the electronic device described in the above embodiments, or may exist independently and not be incorporated into the electronic device.
[0087] Another aspect of the present application provides a computer program product or computer program, which includes computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform the method for preparing a ferrite isolator provided in each of the above embodiments.
[0088] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements or improvements made within the spirit and principles of the present application should be included in the scope of protection of the present application.
Claims
1. A method for preparing a ferrite isolator, characterized in that: The method comprises: forming an undercut structure on the surface of the ferrite substrate based on a preset target product unit range; Prepare a target resistance layer on the undercut structure by a physical deposition method; preparing a composite metal layer on the target resistance layer, and obtaining an initial product structure based on the ferrite substrate, the target resistance layer and the composite metal layer; The initial product structure is unitized based on the target product unit range to obtain a target isolator.
2. The method according to claim 1, characterized in that The forming of an undercut structure on the surface of the ferrite substrate based on a preset target product unit range includes: Cutting grooves on the surface of the ferrite substrate based on a preset target product unit range; A resistance region located between the grooves is obtained, and a mask layer is prepared on the ferrite substrate based on the resistance region to form an undercut structure.
3. The method according to claim 2, characterized in that A size difference between a region size of the resistance region and a target size corresponding to the target resistance layer is 20 μm, and the region size is larger than the target size.
4. The method according to claim 2, characterized in that The method of preparing a target resistance layer on the undercut structure by a physical deposition method comprises: forming a resistive layer thin film on the undercut structure by a physical deposition method; The resistance layer film and the mask layer film corresponding to the mask area of the mask layer are removed to form a target resistance layer corresponding to the resistance area on the ferrite substrate.
5. The method according to claim 4, characterized in that The step of removing the resistance layer film and the mask layer film corresponding to the mask area of the mask layer to form a target resistance layer corresponding to the resistance area on the ferrite substrate includes: peeling off the resistance layer film and the mask layer film corresponding to the mask area of the mask layer to obtain a peeled intermediate product; The mask layer of the stripped intermediate product is removed by a debonding solution at a preset temperature, so as to form a target resistance layer corresponding to the resistance area on the ferrite substrate.
6. The method according to claim 1, characterized in that The method of preparing a composite metal layer on the target resistance layer comprises: sputtering a preset composite metal layer film on the target resistor layer by a physical deposition method; The composite metal layer film is subjected to metal imaging processing to obtain a composite metal layer.
7. The method according to claim 6, characterized in that The step of performing metal imaging processing on the composite metal layer film to obtain the composite metal layer comprises: The composite metal layer film is subjected to metal imaging processing based on a preset image by photolithography and etching technology to obtain a composite metal layer.
8. The method according to claim 1, characterized in that The unitizing of the initial product structure based on the target product unit range to obtain a target isolator includes: The initial product structure is cut using a dicing machine based on the target product unit range to complete the unitization process of the initial product structure and obtain a target isolator.
9. A microwave system, characterized in that: The target isolator is prepared by the preparation method of the ferrite isolator according to any one of claims 1 to 8, and is used for isolating reflected signals and protecting circuits.
10. A system for preparing a ferrite isolator, characterized in that: include: a cutting unit, configured to form an undercut structure on the surface of the ferrite substrate based on a preset target product unit range; a resistance layer preparation unit, configured to prepare a target resistance layer on the undercut structure by a physical deposition method; a composite metal layer preparation unit, configured to prepare a composite metal layer on the target resistance layer, and obtain an initial product structure based on the ferrite substrate, the target resistance layer, and the composite metal layer; A structural processing unit is used to perform unit processing on the initial product structure based on the target product unit range to obtain a target isolator.