Ka-band low-loss high-power microstrip double-junction isolator

Abstract

The utility model discloses a ka-band low-loss high-power microstrip double-junction isolator which is sequentially provided with a base (1), a microwave ferrite substrate (2), a thin-film resistance layer (3), a microstrip circuit (4) and a permanent magnet (5) from bottom to top. The microstrip circuit (4) comprises a pair of main body discs (41), each main body disc (41) is connected with a pair of branch leads (42) and a central lead (43), and the two main body discs (41) are connected through the branch leads; a notch (41a) is formed in the outer edge of the main body disc (41); a pin of the central lead (43) is connected to the thin-film resistor layer (3) and comprises a straight section (43a), a 1 / 4 arc-shaped section (43b), a horizontal extension section (43c) and an arc-shaped bent section (43d); and the permanent magnet (5) is connected to the main body disc (41). The utility model has the advantages that the isolation performance is effectively improved, the miniaturization is maintained, and meanwhile, the high-power processing capability and the low-loss function are realized.

Description

TECHNICAL FIELD

[0001] The utility model relates to microwave communication technical field especially relates to a ka wave band low loss high power microstrip double junction isolator. BACKGROUND

[0002] With the rapid development of microwave and millimeter wave technology, ka wave band namely 27~40Ghz, because its high bandwidth and low atmospheric attenuation characteristics, in satellite communication, radar detection, high speed data transmission etc. Field shows great potential. However, the equipment working in ka wave band faces the challenge of high power, high isolation requirement, small size etc. The traditional microstrip isolator usually adopts single junction structure, and it is difficult to meet the double needs of high isolation and low loss of ka wave band. SUMMARY

[0003] The utility model discloses a ka wave band low loss high power microstrip double junction isolator can effectively improve the isolation performance, and realizes high power processing capacity and low loss function while keeping miniaturization.

[0004] In order to realize the above-mentioned purpose, the utility model discloses a technical scheme as follows:

[0005] A ka wave band low loss high power microstrip double junction isolator is sequentially provided with a base, a microwave ferrite substrate, a thin film resistance layer, a microstrip circuit and a permanent magnet from bottom to top.

[0006] The microstrip circuit includes a pair of main discs, each main disc is connected with a pair of branch leads and a center lead, the two branch leads are symmetrically arranged left and right with the axis of the center lead as the middle line, and the two main discs are connected through one of the branch leads, and the other end of the other branch lead is connected to the two sides of the microwave ferrite substrate, and an equal interval notch is further arranged on the outer edge of each main disc, and the notch is arranged between each pair of branch leads and between the branch lead and the center lead.

[0007] The pin of the center lead is connected to the thin film resistance layer, which includes a straight section, a 1 / 4 arc section, a horizontal extension section and an arc bending section connected in sequence, the straight section and the horizontal extension section are parallel to each other, and the length of the horizontal extension section is greater than the length of the straight section, the arc bending section is bent towards the side where the straight section is located, and the arc length of the arc bending section is less than 1 / 2 of a circle.

[0008] The bottom surface of the microwave ferrite substrate is fixedly connected to the upper surface of the base, the thin film resistance layer is connected to one side of the long side of the microwave ferrite substrate, the microstrip circuit is connected to the other side of the microwave ferrite substrate and the pin thereof is connected to the thin film resistance layer, one permanent magnet is respectively connected to the main disc of the microstrip circuit, and the axis of the permanent magnet coincides with the central axis of the main disc.

[0009] Further, the thin film resistance layer is arranged on the upper surface of the microwave ferrite substrate through a thin film process to increase the adhesion of the thin film resistance layer and prevent the thin film resistance layer from peeling.

[0010] Further, the microstrip circuit is electroplated on the upper surface of the microwave ferrite substrate through a photoetching technique.

[0011] Further, the microwave ferrite substrate is a garnet material ferrite, the permanent magnet is a samarium-cobalt permanent magnet, and the base is a magnetic metal material base.

[0012] Further, the permanent magnet is glued on the microstrip circuit through epoxy resin.

[0013] Further, the microwave ferrite substrate is fixed on the upper surface of the base through soldering by a soldering station using lead-free solder paste.

[0014] Compared with the prior art, the technical scheme of the utility model has the advantages that:

[0015] (1) The utility model adopts a microstrip line design, uses a low-loss and high-dielectric-constant dielectric substrate, optimizes the width and spacing of the microstrip line, and reduces transmission loss.

[0016] (2) The ferrite material of the utility model is high-performance garnet ferrite, and the permeability and saturation magnetization of the ferrite material are optimized to adapt to the high-frequency characteristics of the ka band.

[0017] (3) The utility model adopts a double-junction structure design, accurately calculates the phase difference and coupling coefficient between the two junctions, and realizes high isolation and low emission.

[0018] (4) The utility model optimizes the microstrip line parameters and dielectric materials, significantly reduces transmission loss, uses high-performance ferrite material and an optimized heat dissipation structure, and ensures stable operation under high power conditions.

[0019] (5) The utility model realizes miniaturization of the device through compact layout and multi-layer structure, and meets the integration needs of modern microstrip systems.

[0020] (6) The device of the utility model can be applied to various application scenarios, including but not limited to satellite communication systems: improving signal transmission quality and reducing system noise; radar detection systems: enhancing radar detection distance and accuracy; high data transmission equipment: supporting stable transmission of higher data rates; test and measurement instruments: as high-performance microstrip components, used for calibration and testing. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is an explosion diagram of the utility model of the ka band low-loss high-power microstrip double-junction isolator.

[0022] Figure 2 The utility model discloses a ka wave band low-loss high-power microstrip double junction isolator assembly diagram. DETAILED DESCRIPTION EMBODIMENT

[0023] In order to make the utility model more clearly, below combining with the utility model of a ka wave band low-loss high-power microstrip double junction isolator further explanation is described here specific embodiment is only used for explaining the utility model, and is not used for limiting the utility model.

[0024] Reference Figure 1 And Figure 2 A ka wave band low-loss high-power microstrip double junction isolator is provided with base 1, microwave ferrite substrate 2, thin film resistance layer 3, microstrip circuit 4 and permanent magnet 5 from bottom to top.

[0025] The microstrip circuit 4 includes a pair of main discs 41, each main disc 41 is connected with a pair of branch leads 42 and a center lead 43, two branch leads 42 are symmetrically arranged left and right with the axis of the center lead 43 as the middle line, and the two main discs 41 are connected through one of the branch leads 42, and the other end of the other branch lead 42 is connected to the two sides of the microwave ferrite substrate 2, and the outer edge of each main disc 41 is also provided with equidistant notches 41a, which are arranged between each pair of branch leads 42 and between the branch lead 42 and the center lead 43.

[0026] The pin of the center lead 43 is connected to the thin film resistance layer 3, which includes a flat section 43a, a 1 / 4 arc section 43b, a horizontal extension section 43c and an arc-shaped bending section 43d connected in sequence, the flat section 43a and the horizontal extension section 43c are parallel to each other, and the length of the horizontal extension section 43c is greater than the length of the flat section 43a, the arc-shaped bending section 43d is bent towards the side where the flat section 43a is located, and the arc length of the arc-shaped bending section 43d is less than 1 / 2 of a circle.

[0027] The bottom surface of the microwave ferrite substrate 2 is fixedly connected to the upper surface of the base 1, the thin film resistance layer 3 is connected to one side of the long edge of the microwave ferrite substrate 2, the microstrip circuit 4 is connected to the other side of the microwave ferrite substrate 2 and its pin is connected to the thin film resistance layer 3, and one permanent magnet 5 is connected to each main disc 41 of the microstrip circuit 4, and the axis of the permanent magnet 5 coincides with the center axis of the main disc 41.

[0028] In the embodiment, the thin film resistance layer 3 is arranged on the upper surface of the garnet microwave ferrite substrate through a thin film process, the microstrip circuit 4 is plated on the upper surface of the garnet microwave ferrite substrate through a photoetching technology, the pin of the microstrip circuit 4 covers the thin film resistance layer 3, the samarium-cobalt permanent magnet is glued on the microstrip circuit 4 through epoxy resin, the axis of the samarium-cobalt permanent magnet overlaps the central axis of the main disc 41 of the microstrip circuit 4, and the bottom surface of the garnet microwave ferrite substrate is welded and fixed with the upper surface of the magnetic metal base through a soldering station.

[0029] The main technical indexes of the isolator of the embodiment are as follows:

[0030]

[0031] The ka-band low-loss high-power microstrip double-junction isolator has small size and simple structure, is suitable for surface mounting and microcircuit integration, and can meet the requirements of various performance indexes and has high reliability.

[0032] In addition to the above-mentioned embodiments, the utility model can also have other implementation manners. Any technical scheme formed by equivalent replacement or equivalent transformation falls within the protection scope required by the utility model.

Claims

1.A ka-band low-loss high-power microstrip double junction isolator, which is provided with a base (1), a microwave ferrite substrate (2), a thin film resistance layer (3), a microstrip circuit (4) and a permanent magnet (5) from bottom to top, characterized in that: the microstrip circuit (4) comprises a pair of main discs (41), each of which is connected with a pair of branch leads (42) and a center lead (43), the two branch leads (42) are symmetrically arranged left and right with the axis of the center lead (43) as the middle line, and the two main discs (41) are connected through one of the branch leads (42), and the other end of the other branch lead (42) is connected to the two sides of the microwave ferrite substrate (2) respectively, and the outer edge of each main disc (41) is also provided with equidistant notches (41a) between each pair of branch leads (42) and between the branch lead (42) and the center lead (43); the pin of the center lead (43) is connected to the thin film resistance layer (3), which comprises a flat section (43a), a 1 / 4 arc section (43b), a horizontal extension section (43c) and an arc bending section (43d) connected in turn, the flat section (43a) and the horizontal extension section (43c) are parallel to each other and the length of the horizontal extension section (43c) is greater than that of the flat section (43a), and the arc bending section (43d) is bent towards the side where the flat section (43a) is located and the arc length is less than 1 / 2 of a circle; the bottom surface of the microwave ferrite substrate (2) is fixedly connected to the upper surface of the base (1), the thin film resistance layer (3) is connected to one side of the long edge of the microwave ferrite substrate (2), the microstrip circuit (4) is connected to the other side of the microwave ferrite substrate (2) and its pin is connected to the thin film resistance layer (3), and one permanent magnet (5) is connected to each main disc (41) of the microstrip circuit (4), and the axis of the permanent magnet (5) coincides with the center axis of the main disc (41). 2.The ka-band low-loss high-power microstrip double junction isolator according to claim 1, characterized in that: the thin film resistance layer (3) is provided on the upper surface of the microwave ferrite substrate (2) by a thin film process. 3.The ka-band low-loss high-power microstrip double junction isolator according to claim 1 or 2, characterized in that: the microstrip circuit (4) is electroplated on the upper surface of the microwave ferrite substrate (2) by a photoetching technology. 4.The ka-band low-loss high-power microstrip double junction isolator according to claim 1 or 2, characterized in that: the microwave ferrite substrate (2) is a garnet material ferrite, the permanent magnet (5) is a samarium-cobalt permanent magnet, and the base (1) is a magnetic metal material base. 5.The ka-band low-loss high-power microstrip double junction isolator according to claim 1 or 2, characterized in that: the permanent magnet (5) is glued on the microstrip circuit (4) by epoxy resin. 6.The ka-band low-loss high-power microstrip double junction isolator according to claim 1 or 2, characterized in that: the microwave ferrite substrate (2) is fixed on the upper surface of the base (1) by a soldering table using lead-free solder paste.

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