Ion qubit addressing system and ion qubit addressing method

Abstract

This application discloses an ion qubit addressing system and a method for addressing ion qubits. The ion qubit addressing system includes a control module, a spintronic device array, and a surface-chip ion trap. The control module is configured to determine an electrical signal control sequence based on the acquired quantum manipulation requirements. The spintronic device array is configured to determine a local magnetic field network based on the electrical signal control sequence. The surface-chip ion trap is configured to control the transition frequency of the ion qubits based on the local magnetic field network, enabling the ion qubit addressing system to address qubits according to the transition frequency. This overcomes the limitations of static magnetic field addressing, allowing for flexible adjustment of the magnetic field distribution according to changes in the quantum algorithm, thus improving addressing efficiency. Furthermore, controlling the transition frequency of the ion qubits allows different ion qubits to acquire unique energy level codes due to spatial differences, achieving precise identification and addressing of target ion qubits.

Description

Technical Field

[0001] This application relates to the field of ion quantum computing, and more specifically, to an ion quantum bit addressing system and an ion quantum bit addressing method. Background Technology

[0002] Trapped ion systems are used to construct and manipulate qubits, thus providing a physical carrier for quantum information processing. To realize practical quantum computing, trapped ion systems need to be extended to large-scale ion arrays, and microfabricated ion trap technology offers a possible path for this. However, microfabricated ion traps face challenges such as optical crosstalk and insufficient positioning accuracy in single-ion addressing, which limits the fidelity and scalability of quantum gates. Summary of the Invention

[0003] This application provides an ion qubit addressing system and an ion qubit addressing method.

[0004] This application provides an ion quantum bit addressing system, which includes a control module, a spintronics device array, and a surface-chip ion trap.

[0005] The control module is configured to determine an electrical signal control sequence based on the acquired quantum manipulation requirements;

[0006] The spintronic device array is configured to determine a local magnetic field network according to the electrical signal control sequence;

[0007] The surface chip ion trap is configured to control the transition frequency of the ion qubits according to the local magnetic field network, so that the ion qubit addressing system can complete qubit addressing according to the transition frequency.

[0008] Thus, the ion qubit addressing system comprises a control module, a spintronic device array, and a surface-chip ion trap. The control module determines the electrical signal control sequence based on the acquired quantum manipulation requirements. The spintronic device array determines the local magnetic field network based on the electrical signal control sequence. The surface-chip ion trap controls the transition frequency of the ion qubits based on the local magnetic field network, enabling the ion qubit addressing system to address qubits according to the transition frequency. In this way, the control module can generate electrical signal control sequences in real time according to different quantum manipulation requirements, thereby enabling the spintronic device array to dynamically generate the required local magnetic field network. This real-time programmable characteristic breaks the limitations of static magnetic field addressing, allowing for flexible adjustment of the magnetic field distribution according to changes in the quantum algorithm, improving addressing efficiency. Furthermore, the surface-chip ion trap can control the transition frequency of the ion qubits based on the local magnetic field network, allowing different ion qubits to obtain unique energy level codes due to spatial differences, achieving precise identification and addressing of target ion qubits.

[0009] In some embodiments, the spintronic device array includes spintronic device units, each spintronic device unit comprising a free layer, an insulating layer, and a reference layer. If the magnetic field direction of the free layer is in the same direction as the magnetic field direction of the reference layer, the spintronic device unit is in a magnetic field-on state; if the magnetic field direction of the free layer is opposite to the magnetic field direction of the reference layer, the spintronic device unit is in a magnetic field-off state. This magnetic field-on / off state is used to indicate whether the local magnetic field exists within a preset spatial range above the spintronic device unit.

[0010] Thus, the spintronic device array comprises spintronic device units, each including a free layer, an insulating layer, and a reference layer. If the magnetic field direction of the free layer is the same as that of the reference layer, the spintronic device unit is in a magnetic field-on state; if the magnetic field direction of the free layer is opposite to that of the reference layer, the spintronic device unit is in a magnetic field-off state. This on / off state indicates the presence or absence of a local magnetic field within a predetermined spatial range above the spintronic device unit. In this way, each spintronic device unit precisely controls the presence or absence of a local magnetic field through the magnetic field directions of the free layer and the reference layer, enabling independent switching operation of each unit and flexibly generating spatially resolved magnetic field distributions.

[0011] In some embodiments, the control module is based on a preset timing device and can output the electrical signal control sequence through preset channels, wherein each preset channel corresponds to one of the spintronic device units.

[0012] Thus, based on a preset timing device, the control module can output electrical signal control sequences through preset channels, where each preset channel corresponds to a spintronic device unit. This allows the control module to output independent electrical signal control sequences to each spintronic device unit, ensuring that each unit can be individually controlled, avoiding signal cross-interference, and providing a foundation for constructing a spatially resolved local magnetic field network.

[0013] In some embodiments, the spintronic device array is configured as follows:

[0014] The direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence.

[0015] The local magnetic field is determined based on the direction of the magnetic field in the free layer of the target spintronic device unit;

[0016] The local magnetic field network is determined based on the local magnetic field.

[0017] Thus, the direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence. Next, the local magnetic field is determined based on the direction of the magnetic field in the free layer of the target spintronic device unit. Finally, the local magnetic field network is determined based on the local magnetic field. In this way, each spintronic device unit in the spintronic device array independently responds to electrical signals, forming a global local magnetic field network through the combination of free layer directions. This local magnetic field network is highly programmable, and the spatial distribution of the magnetic field can be flexibly adjusted according to quantum manipulation requirements.

[0018] In some embodiments, the surface chip ion trap includes a radio frequency electrode, a radio frequency ground electrode, and a DC electrode, wherein the radio frequency electrode and the radio frequency ground electrode are used to form an ion trapping potential trap, the ion qubit is trapped in the ion trapping potential trap, and the DC electrode is used to adjust the spatial position of the ion qubit.

[0019] Thus, the surface-mount chip ion trap includes a radio frequency (RF) electrode, an RF ground electrode, and a DC electrode. The RF and RF ground electrodes form an ion trapping potential well, within which the ion qubits are trapped. The DC electrode is used to adjust the spatial position of the ion qubits. This provides a stable physical carrier for the ion qubits, ensuring that the ions are within a space suitable for quantum manipulation, which is the foundation for subsequent addressing and quantum gate operations. Furthermore, by applying voltage independently in segments, the DC electrode adjusts the distribution of the radial potential well, achieving precise control over the spatial position of the ion qubits.

[0020] In some embodiments, the spintronic device array is distributed within the projection of the ion trapping potential well, and the control module is distributed within the projection of the spintronic device array.

[0021] Thus, the spintronic device array is distributed within the projection of the ion trapping potential well, and the control module is distributed within the projection of the spintronic device array. This allows the ion qubits to be located in the region with the greatest change in local magnetic field strength, ensuring that the transition frequency difference between adjacent ion qubits is greater than the control field linewidth, thereby improving the accuracy of frequency differentiation and reducing addressing errors caused by magnetic field attenuation.

[0022] In some embodiments, the surface chip ion trap is configured as follows:

[0023] Based on the local magnetic field network, the ionic qubits are controlled to undergo Zeeman splitting to determine the transition frequency.

[0024] In this way, the surface-mount chip ion trap can control the Zeeman splitting of ion qubits based on the local magnetic field network, thus determining the transition frequency. In this way, the energy levels of the ion qubits are split through the Zeeman effect, directly changing their transition frequencies, allowing ion qubits at different locations to generate unique transition frequencies due to differences in their local magnetic fields.

[0025] In some embodiments, the ion qubit addressing system further includes a control signal transmission component, which is configured to:

[0026] A preset quantum state control signal is emitted globally, and the preset quantum state control signal includes a laser signal or a microwave signal;

[0027] The ionic qubit that resonates with the preset quantum state control signal is identified as the target ionic qubit, wherein the transition frequency of the target ionic qubit resonates with the quantum state control signal.

[0028] Thus, the ion qubit addressing system also includes a control signal emission component, which can emit a preset quantum state control signal, including laser or microwave signals. This component can identify ion qubits that resonate with the preset quantum state control signal as target ion qubits, where the transition frequency of the target ion qubit resonates with the quantum state control signal. In this way, by globally emitting the preset quantum state control signal, resonance occurs only with ion qubits whose transition frequencies match, thereby accurately identifying and driving the target ion qubit, achieving frequency-selective addressing without focusing. Furthermore, the globally emitted preset control signal can act on all ion qubits simultaneously. Combined with the independent unit control of the spintronic device array, by adjusting the transition frequencies of different ion qubits, multiple target ions can simultaneously resonate with the signal, supporting parallel manipulation of multiple qubits.

[0029] This application provides an ion qubit addressing method, which is based on the above-described ion qubit addressing system and includes:

[0030] Based on the obtained quantum manipulation requirements, determine the electrical signal control sequence;

[0031] The local magnetic field network is determined based on the electrical signal control sequence;

[0032] The transition frequency of the ion qubits is controlled according to the local magnetic field network so that the ion qubit addressing system can complete qubit addressing according to the transition frequency.

[0033] Thus, based on the obtained quantum manipulation requirements, an electrical signal control sequence is determined. Next, based on the electrical signal control sequence, a local magnetic field network is determined. Finally, based on the local magnetic field network, the transition frequencies of the ion qubits are controlled, enabling the ion qubit addressing system to address qubits according to the transition frequencies. This allows for the real-time generation of electrical signal control sequences based on different quantum manipulation requirements, thereby generating the required local magnetic field network. This real-time programmable characteristic breaks the limitations of static magnetic field addressing, allowing for flexible adjustment of the magnetic field distribution according to changes in the quantum algorithm, improving addressing efficiency. Furthermore, by controlling the transition frequencies of the ion qubits based on the local magnetic field network, different ion qubits acquire unique energy level codes due to spatial differences, achieving precise identification and addressing of target ion qubits.

[0034] In some embodiments, determining the local magnetic field network based on the electrical signal control sequence includes:

[0035] The direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence.

[0036] The local magnetic field is determined based on the direction of the magnetic field in the free layer of the target spintronic device unit;

[0037] The local magnetic field network is determined based on the local magnetic field.

[0038] Thus, the direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence. Next, the local magnetic field is determined based on the direction of the magnetic field in the free layer of the target spintronic device unit. Finally, a local magnetic field network is determined based on the local magnetic field. In this way, each spintronic device unit responds independently to the electrical signal, forming a global local magnetic field network through the combination of free layer directions. This local magnetic field network is highly programmable, allowing for flexible adjustment of the spatial distribution of the magnetic field according to quantum manipulation requirements.

[0039] In some embodiments, controlling the transition frequency of the ion qubits according to the local magnetic field network includes:

[0040] Based on the local magnetic field network, the ionic qubits are controlled to undergo Zeeman splitting to determine the transition frequency.

[0041] Thus, based on the local magnetic field network, the ionic qubits are controlled to undergo Zeeman splitting to determine the transition frequency. In this way, the energy levels of the ionic qubits are split through the Zeeman effect, directly changing their transition frequency, allowing ionic qubits at different locations to generate unique transition frequencies due to differences in their local magnetic fields.

[0042] In some embodiments, the method further includes:

[0043] A preset quantum state control signal is emitted globally, and the preset quantum state control signal includes a laser signal or a microwave signal;

[0044] The ionic qubit that resonates with the preset quantum state control signal is identified as the target ionic qubit, wherein the transition frequency of the target ionic qubit resonates with the quantum state control signal.

[0045] In this way, a preset quantum state control signal is emitted globally, which may include a laser signal or a microwave signal. Then, the ionic qubit that resonates with the preset quantum state control signal is identified as the target ionic qubit, wherein the transition frequency of the target ionic qubit resonates with the quantum state control signal. Thus, by using the preset quantum state control signal, resonance occurs only with ionic qubits whose transition frequencies match, thereby accurately identifying and driving the target ionic qubit.

[0046] Additional aspects and advantages of embodiments of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of this application. Attached Figure Description

[0047] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, wherein:

[0048] Figure 1 This is one of the structural schematic diagrams of the ion quantum bit addressing system according to an embodiment of this application;

[0049] Figure 2 This is a schematic diagram of an ion quantum bit addressing system according to an embodiment of this application;

[0050] Figure 3 This is a schematic diagram of the structure of the spintronic device unit according to an embodiment of this application;

[0051] Figure 4 This is a schematic diagram of the control module according to an embodiment of this application;

[0052] Figure 5 This is a schematic diagram of the local magnetic field network generation according to an embodiment of this application;

[0053] Figure 6 This is a second schematic diagram of the ion quantum bit addressing system according to an embodiment of this application;

[0054] Figure 7 This is one of the flowcharts illustrating the ion quantum bit addressing method according to an embodiment of this application;

[0055] Figure 8 This is a schematic diagram of a quantum circuit for implementing two-ion CNOT gate operation according to an embodiment of this application;

[0056] Figure 9 This is a schematic diagram of the electrical signal control sequence according to an embodiment of this application;

[0057] Figure 10 This is a second schematic flowchart of the ion quantum bit addressing method according to the embodiments of this application;

[0058] Figure 11 This is the third flowchart illustrating the ion quantum bit addressing method according to the embodiments of this application;

[0059] Figure 12 This is the fourth flowchart illustrating the ion quantum bit addressing method according to the embodiments of this application. Detailed Implementation

[0060] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the embodiments of this application, and should not be construed as limiting the embodiments of this application.

[0061] Trapped ion systems construct qubits through precise manipulation of trapped ion qubits, providing a stable physical carrier for quantum information processing and demonstrating excellent performance in small-scale qubit manipulation. However, the realization of practical quantum computing relies on the expansion of large-scale ion arrays. Microfabrication ion trap technology, with its advantages in micro-nano manufacturing processes, provides a feasible path for this expansion—it can achieve stable trapping of a large number of ions through precise electrode structure design, theoretically supporting the integration of hundreds, thousands, or even more qubits.

[0062] However, one of the mainstream approaches to microfabricated ion trap technology is spatial separation, which primarily isolates the ion manipulation region through physical means. For example, when using a micrometer-level focused laser beam to directly position target ions, the spot positioning error must be controlled within 1 μm. This places extremely stringent requirements on the precision of the optical system—any minute mechanical vibration, temperature drift, or optical path distortion can lead to positioning deviations, thereby causing crosstalk. While the approach of moving ions to a fixed manipulation region using a dynamic electric field avoids the high precision dependence of the optical system, it generates thermal noise due to the interaction between the ions and the electromagnetic field within the trap during ion movement. This noise can disrupt the coherence of quantum states, and in large-scale ion arrays, frequent ion movements can lead to the accumulation of thermal noise, severely reducing manipulation fidelity.

[0063] Furthermore, another mainstream approach to microfabricated ion trap technology is the frequency separation approach, which achieves selective manipulation through energy level encoding. For example, it utilizes non-uniform magnetic field gradients to induce MHz-level Zeeman shifts in adjacent ions, or creates frequency differences through optical frequency shift effects. However, this approach is extremely sensitive to environmental noise: to maintain the frequency distinguishability of adjacent ions, the stability of the magnetic or optical field must be controlled at the 0.1% level. In real-world environments, even minute temperature fluctuations, geomagnetic field disturbances, or optical field intensity drifts can lead to frequency shift deviations, causing mismanagement of non-target ions. In large-scale ion arrays, the spatial uniformity of the magnetic or optical field is even more difficult to guarantee, and the frequency difference between edge ions and central ions is prone to deviation, further reducing the accuracy and efficiency of addressing.

[0064] Furthermore, while the magnetic field gradient-based addressing technique in the frequency separation scheme theoretically supports large-scale parallel manipulation, the stability of the magnetic field gradient in this technique is highly dependent on the performance of the current source. A current drift in the nanoampere (nA) range can cause a frequency shift in the MHz range, leading to irreversible manipulation errors. Moreover, this magnetic field gradient-based addressing technique uses high-density current devices. The Joule heating generated by these devices causes nanoscale deformation of the trap electrode (typically up to 50 nm), disrupting the stable trapping of the ion array and exacerbating quantum state decoherence.

[0065] In summary, while microfabrication ion trap technology makes it possible to construct large-scale ion arrays, it is difficult to achieve efficient addressing of individual ions.

[0066] Based on the above issues, please refer to Figure 1 This application provides an ion quantum bit addressing system 1000, which includes a control module 100, a spintronic device array 200, and a surface-mount chip ion trap 300.

[0067] The control module 100 is configured to determine an electrical signal control sequence based on the acquired quantum manipulation requirements;

[0068] The spintronic device array 200 is configured to determine a local magnetic field network based on an electrical signal control sequence;

[0069] The surface chip ion trap 300 is configured to control the transition frequency of the ion qubits according to a local magnetic field network, so that the ion qubit addressing system 1000 can complete qubit addressing according to the transition frequency.

[0070] Specifically, the ion qubit addressing system 1000 refers to a complete system for achieving selective manipulation of ion qubits. It consists of a control module 100, a spintronic device array 200, and a surface-mount chip ion trap 300. It achieves precise addressing of the target ion qubit through a link of "electrical signal control sequence → local magnetic field network → transition frequency differentiation." The ion qubit addressing system 1000 is an integrated physical platform capable of handling the efficient addressing of single ions in large-scale ion arrays. Through real-time programmable magnetic field manipulation, it distinguishes the transition frequency of the target ion from other ions, thereby achieving selective quantum manipulation.

[0071] Control module 100 refers to a signal processing unit built on a CMOS high-precision timing control system, configured to generate nanosecond-level precision electrical signal control sequences based on input quantum manipulation requirements (such as quantum gate sequences and algorithm steps). Control module 100 is responsible for converting abstract quantum operation requirements into specific electrical signal instructions.

[0072] The CMOS high-precision timing control system refers to a high-precision timing control system built based on CMOS (Complementary Metal-Oxide-Semiconductor) technology, serving as the hardware implementation carrier of the real-time control module 100. CMOS high-precision timing control features multi-channel independent control, nanosecond-level timing accuracy, and programmability. Multi-channel independent control refers to the ability to output multiple independent electrical signal channels in parallel, each channel capable of individually controlling its corresponding spintronic device unit, supporting synchronous addressing of large-scale ion arrays. Nanosecond-level timing accuracy refers to the output electrical pulse signal length being on the nanosecond level and the amplitude on the milliampere (mA) level, enabling precise control of the magnetic field switching state of spintronic devices (on / off switching speed reaching the nanosecond level), meeting the high-precision timing requirements of quantum gate operations. Programmability refers to the ability to dynamically generate suitable electrical signal control sequences according to quantum manipulation requirements (preset quantum gate sequences or real-time addressing requirements), achieving real-time programming control of the spintronic device array 200, thereby regulating the ion transition frequency to complete addressing.

[0073] Spintronic device array 200 refers to a two-dimensional array composed of micro- and nano-scale spin devices (such as spin-transfer torque devices, spin-orbit torque devices, and voltage-controlled magnetic anisotropy devices), which can be independently switched according to an electrical signal control sequence to generate a spatially distributed local magnetic field network.

[0074] The surface chip ion trap 300 refers to an ion trapping device manufactured based on micro-nano technology, which uses a local magnetic field network to control the transition frequency of ions.

[0075] Quantum manipulation requirements refer to the manipulation targets needed to achieve specific quantum algorithms or quantum gate operations, such as single-qubit gates, multi-qubit entanglement gates (such as CNOT gates), quantum state initialization and measurement, etc.

[0076] The electrical signal control sequence refers to the set of timed electrical pulse signals generated by the control module 100. Each signal corresponds to a unit in the spintronic device array 200 and includes parameters such as pulse amplitude, width (nanosecond level) and timing.

[0077] A local magnetic field network refers to a spatial magnetic field distribution formed by the superposition of local magnetic fields of multiple units in a spintronic device array 200. Its intensity, range, and timing are determined by an electrical signal control sequence.

[0078] The transition frequency of an ionic qubit refers to the frequency of electromagnetic radiation absorbed / emitted by the ionic qubit during transitions between energy levels. It is shifted by the Zeeman effect (Zeeman shift) under the influence of the local magnetic field network, causing a distinguishable difference in frequency between the target ion and other ions.

[0079] The control module 100 acquires a preset quantum operation target, such as realizing specific quantum manipulation requirements like single-qubit gates, multi-qubit entanglement gates (e.g., CNOT gates), quantum state initialization, or measurement. Subsequently, based on the quantum manipulation requirements, the control module 100 generates a set of electrical pulse signals (electrical signal control sequence) with nanosecond-level precision through a CMOS high-precision timing system.

[0080] The spintronic device array 200 forms a local magnetic field network with a specific spatial distribution according to the corresponding channel signals in the electrical signal control sequence.

[0081] The surface chip ion trap 300 is configured to control the transition frequency of the ion qubits according to a local magnetic field network, so that the ion qubit addressing system 1000 can complete qubit addressing according to the transition frequency.

[0082] Please see Figure 2 , Figure 2 This is a schematic diagram of an ion qubit addressing system 1000. In the diagram, a represents the surface chip ion trap 300; b represents the DC electrode; c represents the radio frequency ground electrode; d represents the radio frequency electrode; e represents the control module 100; f represents the spintronic device unit in the spintronic device array 200; g represents the ion qubit trapped in the ion trapping potential trap; and h represents the preset quantum state control signal emitted by the control signal transmission component 400.

[0083] In summary, the ion qubit addressing system provided in this application includes a control module, a spintronic device array, and a surface-chip ion trap. The control module determines an electrical signal control sequence based on the acquired quantum manipulation requirements. The spintronic device array determines a local magnetic field network based on the electrical signal control sequence. The surface-chip ion trap controls the transition frequency of the ion qubits based on the local magnetic field network, enabling the ion qubit addressing system to address qubits according to the transition frequency. Thus, the control module can generate electrical signal control sequences in real time according to different quantum manipulation requirements, thereby enabling the spintronic device array to dynamically generate the required local magnetic field network. This real-time programmable characteristic breaks the limitations of static magnetic field addressing, allowing for flexible adjustment of the magnetic field distribution according to changes in the quantum algorithm, improving addressing efficiency. The surface-chip ion trap controls the transition frequency of the ion qubits according to the local magnetic field network, allowing different ion qubits to obtain unique energy level codes due to spatial differences, achieving precise identification and addressing of the target ion qubit.

[0084] In some embodiments, the spintronic device array 200 includes spintronic device units, each comprising a free layer, an insulating layer, and a reference layer. If the magnetic field direction of the free layer is the same as that of the reference layer, the spintronic device unit is in a magnetic field-on state. If the magnetic field direction of the free layer is opposite to that of the reference layer, the spintronic device unit is in a magnetic field-off state. The magnetic field-on / off state is used to indicate whether a local magnetic field exists within a preset spatial range above the spintronic device unit.

[0085] Specifically, the spintronic device unit refers to the basic functional unit constituting the spintronic device array 200. Made of micro- and nano-scale spintronic materials (such as ferromagnetic materials and insulating materials), it can independently generate or shut down a local magnetic field via electrical signals. It is the core component for achieving precise magnetic field control and includes spin-transfer torque devices, spin-orbit torque devices, and voltage-controlled magnetic anisotropy devices. The spintronic device unit is the "smallest operating unit" of the spintronic device array 200. Each unit corresponds to an ion at a specific location in the surface-chip ion trap 300. By independently controlling its magnetic field state (on / off), precise action on the ion at that specific location is achieved.

[0086] The free layer refers to the functional layer in a spintronic device unit composed of ferromagnetic materials (such as Co, Pt, Co, Ru, Co, Pt, Co, W, and CoFeB, etc.). Its magnetic moment direction can be controlled by external electrical signals, and it is the core layer that determines the magnetic field state of the unit.

[0087] The insulating layer refers to the intermediate layer located between the free layer and the reference layer. It is composed of insulating materials such as oxides (e.g., MgO and Ta) and mainly serves to isolate electrical conduction and transmit spin moment signals.

[0088] The reference layer (also known as the pinned layer) is a functional layer in a spintronic device unit composed of ferromagnetic materials (such as CoFeB, W, CoFeB, etc.). Its magnetic moment direction is "pinned" (fixed) and serves as a reference for the direction of the magnetic moment of the free layer.

[0089] Please see Figure 3 , Figure 3 This is a schematic diagram of a spintronic device unit. Figure 3 The arrow above indicates the free layer. Figure 3 The arrow below indicates the reference layer. Figure 3 The left side indicates that the magnetic fields of the free layer and the reference layer are in opposite directions. Figure 3The right side indicates that the magnetic fields of the free layer and the reference layer are in the same direction. When the magnetic fields of the free layer and the reference layer are in the same direction, the spintronic device unit generates a local magnetic field (magnetic field on state); when the magnetic fields of the free layer and the reference layer are in opposite directions, the spintronic device unit has no magnetic field (magnetic field off state), thus controlling the ion transition frequency by switching between "having a magnetic field" and "not having a magnetic field".

[0090] It should be noted that the spintronic device units in the spintronic device array 200 are arranged periodically. Furthermore, the spintronic device array 200 can be added at a location far from the ion array, thereby providing a quantized principal axis magnetic field and compensating for geomagnetic field disturbances.

[0091] Thus, the spintronic device array comprises spintronic device units, each including a free layer, an insulating layer, and a reference layer. If the magnetic field direction of the free layer is the same as that of the reference layer, the spintronic device unit is in a magnetic field-on state; if the magnetic field direction of the free layer is opposite to that of the reference layer, the spintronic device unit is in a magnetic field-off state. This on / off state indicates the presence or absence of a local magnetic field within a predetermined spatial range above the spintronic device unit. In this way, each spintronic device unit precisely controls the presence or absence of a local magnetic field through the magnetic field directions of the free layer and the reference layer, enabling independent switching operation of each unit and flexibly generating spatially resolved magnetic field distributions.

[0092] In some embodiments, the control module 100 is based on a preset timing device and can output electrical signals to control a sequence through preset channels, wherein each preset channel corresponds to a spintronic device unit.

[0093] Specifically, the preset timing device refers to a CMOS high-precision timing control system, which can generate signal timing logic with nanosecond-level time accuracy to ensure that the output timing, pulse width, interval and other parameters of the electrical signal control sequence strictly match the quantum manipulation requirements.

[0094] The preset channel refers to the physical path of the electrical signal output by the control module 100. Each channel corresponds to an independent spintronic device unit in the spintronic device array 200. It can transmit the pulse signal (such as amplitude, width, timing, etc.) for the spintronic device unit in the electrical signal control sequence, so as to realize independent control of a single spintronic device unit and ensure that the signal has no cross-interference.

[0095] Please see Figure 4 , Figure 4This is a schematic diagram of the control module 100. A1 to An represent preset channels on the control module 100. Each preset channel can independently transmit the pulse signal for the spintronic device unit in the electrical signal control sequence. The electrical signal output by each preset channel is a pulse signal with a length of nanoseconds and an amplitude of milliamperes. The specific timing of the electrical pulse signal is determined according to the actual addressing requirements.

[0096] Thus, based on a preset timing device, the control module can output electrical signal control sequences through preset channels, where each preset channel corresponds to a spintronic device unit. This allows the control module to output independent electrical signal control sequences to each spintronic device unit, ensuring that each unit can be individually controlled, avoiding signal cross-interference, and providing a foundation for constructing a spatially resolved local magnetic field network.

[0097] In some embodiments, the spintronic device array 200 is configured as follows:

[0098] The direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence.

[0099] The local magnetic field is determined based on the direction of the magnetic field in the free layer of the target spintronic device unit;

[0100] Based on the local magnetic field, determine the local magnetic field network.

[0101] Specifically, the local magnetic field refers to the local magnetic field generated in a preset space above a single device unit in the spintronic device array 200 when it is turned on. It only acts on the specific spatial region corresponding to the unit and the interference to other locations is negligible.

[0102] A local magnetic field network refers to the overall magnetic field distribution formed by the spatial superposition of local magnetic fields generated by multiple device units in a spintronic device array 200. Its distribution pattern (such as where there are magnetic fields and their strength) is determined by an electrical signal control sequence, which can dynamically adapt to different quantum manipulation requirements.

[0103] Please see Figure 5 , Figure 5 This diagram illustrates the generation of a local magnetic field network. The control module 100 outputs an electrical signal control sequence (A1-An) through a preset channel to control the magnetic field direction of the free layer of the target spintronic device unit, thereby generating a local magnetic field and thus a local magnetic field network.

[0104] Thus, the direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence. Next, the local magnetic field is determined based on the direction of the magnetic field in the free layer of the target spintronic device unit. Finally, the local magnetic field network is determined based on the local magnetic field. In this way, each spintronic device unit in the spintronic device array independently responds to electrical signals, forming a global local magnetic field network through the combination of free layer directions. This local magnetic field network is highly programmable, and the spatial distribution of the magnetic field can be flexibly adjusted according to quantum manipulation requirements.

[0105] Please refer to the following: Figure 2 In some embodiments, the surface chip ion trap 300 includes a radio frequency electrode, a radio frequency ground electrode, and a DC electrode, wherein the radio frequency electrode and the radio frequency ground electrode are used to form an ion trapping potential trap, in which the ion qubits are trapped, and the DC electrode is used to adjust the spatial position of the ion qubits.

[0106] Specifically, the surface chip ion trap 300 includes Paul-type ion traps and Penning-type ion traps; the Paul-type ion trap will be used as an example below. It should be noted that the surface chip ion trap 300 can be either a trap for trapping two-dimensional ion crystals or a trap for trapping three-dimensional ions.

[0107] The radio frequency (RF) electrode refers to the conductive structure (typically a metal micro / nano electrode) in the surface-mount ion trap 300 used to apply a high-frequency oscillating voltage, typically operating at a frequency of 10-100 MHz. Its core function is to form a dynamic binding force through a high-frequency alternating electric field, in conjunction with the RF ground electrode, constituting the main framework of the ion trapping potential trap. Based on the working mechanism of the Paul ion trap, the high-frequency alternating voltage applied by the RF electrode generates a periodically changing electric field in space. Charged ions are bound by a "pseudo-potential" in this electric field, counteracting the thermal diffusion tendency of the ions and confining them to the central region of the trap. It should be noted that the RF electrode can be designed in segments. By adjusting the voltage phase or amplitude of different segments, the symmetry of the potential trap can be optimized to adapt to the trapping requirements of ion arrays of different sizes (such as linear and two-dimensional arrays).

[0108] The radio frequency (RF) ground electrode refers to the grounded conductive structure in the surface-mount ion trap 300 that works in conjunction with the RF electrode. It serves as a return path for the high-frequency electric field and, together with the RF electrode, forms the RF electric field environment required for ion trapping. Its surface is typically the primary trapping region for ions (ions are usually suspended above the RF ground electrode). The potential difference between the RF ground electrode and the RF electrode generates a high-frequency alternating electric field, forming an ion trapping potential trap. For example, in a five-wire ion trap, the RF ground electrode is located in the middle, with RF electrodes on either side. The electric field distribution forms an ion trapping potential trap, confining the ions to the center position directly above the RF ground electrode.

[0109] The DC electrode is a segmented conductive structure in the surface-chip ion trap 300 used to apply a static DC voltage. The voltage value of each segment can be controlled independently. By adjusting the radial trapping potential of the ions through the electrostatic field, precise control of the spatial position of the ions can be achieved.

[0110] An ion trapping potential well is a three-dimensional potential field distribution formed by the radio frequency electric field generated by the radio frequency electrode and the radio frequency ground electrode, superimposed with the electrostatic field generated by the DC electrode. It can bind charged ions in the central region of the potential well, preventing ion diffusion or escape.

[0111] Thus, the surface-mount chip ion trap includes a radio frequency (RF) electrode, an RF ground electrode, and a DC electrode. The RF and RF ground electrodes form an ion trapping potential well, within which the ion qubits are trapped. The DC electrode is used to adjust the spatial position of the ion qubits. This provides a stable physical carrier for the ion qubits, ensuring that the ions are within a space suitable for quantum manipulation, which is the foundation for subsequent addressing and quantum gate operations. Furthermore, by applying voltage independently in segments, the DC electrode adjusts the distribution of the radial potential well, achieving precise control over the spatial position of the ion qubits.

[0112] Please refer to the following: Figure 2 In some embodiments, the spintronic device array 200 is distributed within the projection of the ion trapping potential well, and the control module 100 is distributed within the projection of the spintronic device array 200.

[0113] Specifically, the spintronic device array 200 being distributed within the projection of the ion trapping potential well means that the spatial position of the spintronic device array 200 corresponds completely to the ion trapping potential well in the vertical direction—with the ion trapping potential well (the area where ions are actually trapped) as a reference, the spintronic device units of the spintronic device array 200 are densely arranged in the area formed by vertical projection downwards on the chip.

[0114] The statement that the control module 100 is distributed within the projection of the spintronic device array 200 means that the physical location of the control module 100 (real-time control module 100) is located in the area formed by the vertical projection of the spintronic device array 200 onto the chip.

[0115] In this way, by distributing the spintronic device array 200 within the projection, each unit directly corresponds to a specific ion position in the ion trapping potential well (such as directly below), maximizing the efficiency of the local magnetic field's effect on the ions—the ions are located in the region with the highest magnetic field strength, which can generate a significant Zeeman shift and reduce energy loss caused by magnetic field attenuation. Furthermore, the control module 100, the spintronic device array 200, and the ion trapping potential well form a vertically stacked structure from bottom to top. All components are integrated onto the same chip using micro-nano technology, avoiding signal delay or space waste caused by component dispersion and significantly reducing the system size.

[0116] Thus, the spintronic device array is distributed within the projection of the ion trapping potential well, and the control module is distributed within the projection of the spintronic device array. This allows the ion qubits to be located in the region with the greatest change in local magnetic field strength, ensuring that the transition frequency difference between adjacent ion qubits is greater than the control field linewidth, thereby improving the accuracy of frequency differentiation and reducing addressing errors caused by magnetic field attenuation.

[0117] In some embodiments, the surface chip ion trap 300 is configured as follows:

[0118] Based on the local magnetic field network, the transition frequency is determined by controlling the Zeeman splitting of ionic qubits.

[0119] Specifically, Zeeman splitting refers to the splitting of energy levels of ionic qubits under the influence of a local magnetic field. That is, when the local magnetic field generated by the spintronics array 200 acts on the ions in the surface chip ion trap 300, the electron spin or nuclear spin of the ions interacts with the magnetic field, causing the energy levels that were originally of the same energy to split into multiple sub-energy levels with different energies. The energy difference (i.e., the transition frequency difference) between adjacent sub-energy levels is proportional to the strength of the local magnetic field.

[0120] In the ion qubit addressing system 1000 provided in this application, a spatial gradient magnetic field (formed by a local magnetic field network of a spintronic device array 200) causes ions at different locations to split into distinct energy levels due to the different magnetic field strengths they are in, resulting in significant differences in the transition frequencies of adjacent ions. This difference in transition frequencies becomes a key identifier for ion qubit addressing—only the transition frequency of the target ion resonates with the global driving signal (laser or microwave), thereby achieving selective manipulation of specific ions and avoiding crosstalk.

[0121] It should be noted that the surface chip ion trap 300 can be partitioned into multiple functional areas, including an operation area, a storage area, and an interaction area.

[0122] In this way, the surface-mount chip ion trap can control the Zeeman splitting of ion qubits based on the local magnetic field network, thus determining the transition frequency. In this way, the energy levels of the ion qubits are split through the Zeeman effect, directly changing their transition frequencies, allowing ion qubits at different locations to generate unique transition frequencies due to differences in their local magnetic fields.

[0123] Please see Figure 6 In some embodiments, the ion qubit addressing system 1000 further includes a control signal transmission component 400, which is configured to:

[0124] The system emits a preset quantum state control signal globally, which may include a laser signal or a microwave signal.

[0125] The ionic qubit that resonates with the preset quantum state control signal is identified as the target ionic qubit, wherein the transition frequency of the target ionic qubit resonates with the quantum state control signal.

[0126] Specifically, the control signal transmitting component 400 refers to the hardware module in the ion qubit addressing system used to generate and transmit preset quantum state control signals. The preset quantum state control signals emitted by the control signal transmitting component 400 can simultaneously cover all ions, eliminating the need for lens focusing or mechanical positioning in traditional solutions, thus simplifying the optical system structure.

[0127] The preset quantum state control signal refers to a laser signal (or microwave signal) with a specific frequency (or wavelength), phase, and intensity output by the control signal transmitting component 400. Its frequency is precisely matched with the transition frequency of the target ion qubit (after Zeeman splitting adjustment), and is used to drive the target ion qubit to undergo energy level transitions, achieving selective manipulation of the quantum state. The frequency of the preset quantum state control signal is pre-set and can be dynamically adjusted according to changes in the local magnetic field network (e.g., when the transition frequency of the target ion changes due to the magnetic field, the laser frequency is synchronously adapted), ensuring that it always resonates with the transition frequency of the target ion qubit.

[0128] It should be noted that ions will only absorb photon energy and undergo energy level transitions when the frequency of the preset quantum state control signal is the same as the ion's transition frequency (the frequency corresponding to the energy level difference). Non-target ions, due to frequency detuning (the difference is much greater than the laser linewidth), do not absorb laser energy, thus achieving precise selection of target ion qubits. The target ion qubit can then be controlled subsequently.

[0129] It should also be noted that, in some embodiments, the ion qubit addressing system further includes an integrated optical component. This integrated optical component refers to an optical functional module integrated with the surface-mount chip ion trap 300 using micro-nano technology. It mainly includes structures such as on-chip waveguides and grating couplers, capable of coupling a preset quantum state control signal to the ion trapping region, thereby achieving quantum state manipulation of the ion qubit. The integrated optical component, combined with the control signal transmitting component 400, can precisely transmit the preset quantum state control signal to the target location via laser coupling, acting on the target ion qubit. The integrated optical component can also perform ground state initialization, quantum state manipulation, and quantum state measurement on the ion qubit.

[0130] Thus, the ion qubit addressing system also includes a control signal emission component, which can emit a preset quantum state control signal, including laser or microwave signals. This component can identify ion qubits that resonate with the preset quantum state control signal as target ion qubits, where the transition frequency of the target ion qubit resonates with the quantum state control signal. In this way, by globally emitting the preset quantum state control signal, resonance occurs only with ion qubits whose transition frequencies match, thereby accurately identifying and driving the target ion qubit, achieving frequency-selective addressing without focusing. Furthermore, the globally emitted preset control signal can act on all ion qubits simultaneously. Combined with the independent unit control of the spintronic device array, by adjusting the transition frequencies of different ion qubits, multiple target ions can simultaneously resonate with the signal, supporting parallel manipulation of multiple qubits.

[0131] Please see Figure 7 This application provides an ion qubit addressing method based on the aforementioned ion qubit addressing system. The method includes:

[0132] 01: Determine the electrical signal control sequence based on the obtained quantum manipulation requirements;

[0133] 02: Determine the local magnetic field network based on the electrical signal control sequence;

[0134] 03: Based on the local magnetic field network, control the transition frequency of the ion qubit so that the ion qubit addressing system can complete qubit addressing according to the transition frequency.

[0135] This application also provides a server, including a memory and a processor. The method of this application can be implemented by the server of this application. Specifically, the memory stores a computer program, and the processor is used to determine an electrical signal control sequence based on the acquired quantum manipulation requirements, and to determine a local magnetic field network based on the electrical signal control sequence. Furthermore, based on the local magnetic field network, the processor controls the transition frequency of the ion qubits so that the ion qubit addressing system can complete qubit addressing according to the transition frequency.

[0136] Specifically, firstly, abstract quantum manipulation requirements (such as single-qubit gates and multi-qubit entanglement gates) are converted into specific electrical signal control sequences. Next, a local magnetic field network is formed through the independent switching of a spintronic device array. Finally, the Zeeman effect is used to distinguish the transition frequency of the target ion qubit from that of other ion qubits, and manipulation is then achieved through resonance signal driving.

[0137] The following describes the ion qubit addressing method provided in this application, using a two-ion CNOT gate operation as an example. The quantum manipulation requirement is to implement a two-ion CNOT gate (controlling ion 1, target ion 2), which requires completing the operations of "ion 1 rotation → two ions entanglement → ion 1 reverse rotation" step by step. Please refer to... Figure 8 and Figure 9 , Figure 8 A schematic diagram of a quantum circuit for realizing two-ion CNOT gate operation. The CNOT gate is realized by using a combination of Ry(1)(π / 2), MS(π / 2), Rx(-π / 2), and Ry(1)(-π / 2). Figure 9 This is a schematic diagram of the electrical signal control sequence. Unit a represents the spintronic device unit corresponding to ion 1, and unit b represents the spintronic device unit corresponding to ion 2.

[0138] First, based on the obtained quantum manipulation requirements, the electrical signal control sequence is determined. That is, the control module 100 generates the electrical signal control sequence as follows: At time T1: a 20ns positive pulse is output to spintronic device unit a corresponding to ion 1 (turning on the magnetic field); At time T2: a 20ns positive pulse is output to spintronic device unit b corresponding to ion 2 (turning on the magnetic field); At time T3: a 20ns negative pulse is output to unit b (turning off the magnetic field); At time T4: a 20ns negative pulse is output to unit a (turning off the magnetic field).

[0139] Subsequently, the local magnetic field network is determined according to the electrical signal control sequence. That is, the spintronic device array 200 dynamically adjusts the switching state of the units according to the electrical signal control sequence to form the following local magnetic field network: T1 stage: Unit a is turned on (generating a 10Gs local magnetic field), unit b is turned off (no magnetic field) → Ion 1 is in a strong magnetic field, and ion 2 is in a zero magnetic field; T2 stage: Both units a and b are turned on → Ions 1 and ion 2 are both in a strong magnetic field; T3 stage: Unit a is turned on, unit b is turned off → returning to the state where ion 1 is only affected by the magnetic field; T4 stage: Both units a and b are turned off → no magnetic field effect.

[0140] Finally, addressing is achieved by controlling the transition frequency of the ion qubits based on the local magnetic field network. Specifically, under a 10Gs magnetic field, ion 1's transition frequency shifts by 28MHz due to the Zeeman effect (significantly different from ion 2 without a magnetic field); ion 2's transition frequency also shifts by 28MHz when cell b is turned on, and returns to its original frequency when turned off. Simultaneously with the frequency shift, global laser drive enables addressing control: the frequency of the global 729nm laser is set to the "transition frequency of ion 1 after its shift"; in stage T1, only ion 1 is driven by the laser due to frequency resonance, completing a Ry(π / 2) rotation; in stage T2, both ions resonate, achieving MS entanglement gates through laser pulses; in stage T3, only ion 1 resonates, completing a Ry(-π / 2) rotation; in stage T4, without a magnetic field, the ion frequency recovers, and the CNOT gate operation is completed. Thus, through dynamic differentiation of transition frequencies, the system accurately addresses and manipulates the target ion, achieving a low-crosstalk two-qubit entanglement gate and completing qubit addressing.

[0141] Thus, based on the obtained quantum manipulation requirements, an electrical signal control sequence is determined. Next, based on the electrical signal control sequence, a local magnetic field network is determined. Finally, based on the local magnetic field network, the transition frequencies of the ion qubits are controlled, enabling the ion qubit addressing system to address qubits according to the transition frequencies. This allows for the real-time generation of electrical signal control sequences based on different quantum manipulation requirements, thereby generating the required local magnetic field network. This real-time programmable characteristic breaks the limitations of static magnetic field addressing, allowing for flexible adjustment of the magnetic field distribution according to changes in the quantum algorithm, improving addressing efficiency. Furthermore, by controlling the transition frequencies of the ion qubits based on the local magnetic field network, different ion qubits acquire unique energy level codes due to spatial differences, achieving precise identification and addressing of target ion qubits.

[0142] Please see Figure 10 In some implementations, step 02 (determining the local magnetic field network based on the electrical signal control sequence) includes:

[0143] 021: Control the direction of the magnetic field in the free layer of the target spintronic device unit according to the electrical signal control sequence;

[0144] 022: Determine the local magnetic field based on the direction of the magnetic field in the free layer of the target spintronic device unit;

[0145] 023: Determine the local magnetic field network based on the local magnetic field.

[0146] In some embodiments, the processor is further configured to control the magnetic field direction of the free layer in the target spintronic device unit according to an electrical signal control sequence; determine a local magnetic field based on the magnetic field direction of the free layer in the target spintronic device unit; and determine a local magnetic field network based on the local magnetic field.

[0147] Specifically, the electrical signal control sequence directly drives the free layer in the target spintronic device unit, causing the magnetic field direction of the free layer in the target spintronic device unit to flip relative to the reference layer (in the same direction / opposite direction). Then, the magnetic field directions of the free layer and the reference layer determine whether the target spintronic device unit generates a local magnetic field. Finally, the local magnetic fields of multiple target spintronic device units are spatially superimposed to form a global magnetic field distribution covering the ion array.

[0148] Thus, the direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence. Next, the local magnetic field is determined based on the direction of the magnetic field in the free layer of the target spintronic device unit. Finally, a local magnetic field network is determined based on the local magnetic field. In this way, each spintronic device unit responds independently to the electrical signal, forming a global local magnetic field network through the combination of free layer directions. This local magnetic field network is highly programmable, allowing for flexible adjustment of the spatial distribution of the magnetic field according to quantum manipulation requirements.

[0149] Please see Figure 11 In some implementations, step 03 (controlling the transition frequency of the ion qubits according to the local magnetic field network) includes:

[0150] 031: Based on the local magnetic field network, control the ion qubits to perform Zeeman splitting and determine the transition frequency.

[0151] In some implementations, the processor is also used to control the ionic qubits to perform Zeeman splitting based on a local magnetic field network, thereby determining the transition frequency.

[0152] Specifically, if the local magnetic field network generates a 10Gs magnetic field at ion A and no magnetic field at ion B, then the transition frequency of ion A will shift by 28MHz due to Zeeman splitting, while the transition frequency of ion B will remain unchanged. The frequency difference between the two becomes the key to distinguishing them, providing a basis for subsequent addressing and manipulation through resonance signals.

[0153] Thus, based on the local magnetic field network, the ionic qubits are controlled to undergo Zeeman splitting to determine the transition frequency. In this way, the energy levels of the ionic qubits are split through the Zeeman effect, directly changing their transition frequency, allowing ionic qubits at different locations to generate unique transition frequencies due to differences in their local magnetic fields.

[0154] Please see Figure 12In some implementations, the method further includes:

[0155] 04: Globally transmit preset quantum state control signals;

[0156] 05: Ion qubits that resonate with the preset quantum state control signal are identified as target ion qubits.

[0157] In some implementations, the processor is also used to globally transmit a preset quantum state control signal, and to identify the ion qubits that resonate with the preset quantum state control signal as target ion qubits.

[0158] Specifically, if the target ion transitions at a frequency of V+ after being acted upon by a local magnetic field network... ( (This is the Zeeman frequency shift), with the preset frequency of the quantum state control signal set to V+. At this point, only the target ion qubit will resonate with the preset quantum state control signal and be identified by the system as the object to be manipulated; other ion qubits will not be responded to due to frequency differences.

[0159] In this way, a preset quantum state control signal is emitted globally, which may include a laser signal or a microwave signal. Then, the ionic qubit that resonates with the preset quantum state control signal is identified as the target ionic qubit, wherein the transition frequency of the target ionic qubit resonates with the quantum state control signal. Thus, by using the preset quantum state control signal, resonance occurs only with ionic qubits whose transition frequencies match, thereby accurately identifying and driving the target ionic qubit.

[0160] This application also provides a computer-readable storage medium containing a computer program. When the computer program is executed by one or more processors, it causes the one or more processors to perform the method of this application.

[0161] It is understood that a computer program includes computer program code. Computer program code can be in the form of source code, object code, executable files, or some intermediate form. Computer-readable storage media can include: any entity or device capable of carrying computer program code, recording media, USB flash drives, portable hard drives, magnetic disks, optical disks, computer memory, read-only memory (ROM), random access memory (RAM), and software distribution media, etc.

[0162] In this specification, the terms "specifically," "furthermore," "particularly," "understandably," etc., refer to specific features, structures, materials, or characteristics described in connection with embodiments or examples that are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0163] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, segment or portion of code comprising one or more executable instructions for implementing the steps of a specific logical function or process, and the scope of the preferred embodiments of the present application includes alternative implementations in which functions may be performed out of the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present application belong.

[0164] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. An ion quantum bit addressing system, characterized in that, The ion quantum bit addressing system includes a control module, a spintronic device array, and a surface-chip ion trap: The control module is configured to determine an electrical signal control sequence based on the acquired quantum manipulation requirements; The spintronic device array is configured to determine a local magnetic field network according to the electrical signal control sequence; The surface chip ion trap is configured to control the transition frequency of the ion qubits according to the local magnetic field network, so that the ion qubit addressing system can complete qubit addressing according to the transition frequency.

2. The ion quantum bit addressing system according to claim 1, characterized in that, The spintronic device array includes spintronic device units, each comprising a free layer, an insulating layer, and a reference layer. If the magnetic field direction of the free layer is the same as that of the reference layer, the spintronic device unit is in a magnetic field-on state. If the magnetic field direction of the free layer is opposite to that of the reference layer, the spintronic device unit is in a magnetic field-off state. This magnetic field-on / off state indicates whether the local magnetic field exists within a preset spatial range above the spintronic device unit.

3. The ion quantum bit addressing system according to claim 2, characterized in that, The control module is based on a preset timing device and can output the electrical signal control sequence through preset channels, wherein each preset channel corresponds to one of the spintronic device units.

4. The ion quantum bit addressing system according to claim 2, characterized in that, The spintronic device array is configured as follows: The direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence. The local magnetic field is determined based on the magnetic field direction of the free layer in the target spintronic device unit; The local magnetic field network is determined based on the local magnetic field.

5. The ion quantum bit addressing system according to claim 1, characterized in that, The surface chip ion trap includes a radio frequency electrode, a radio frequency ground electrode, and a DC electrode. The radio frequency electrode and the radio frequency ground electrode are used to form an ion trapping potential trap, in which the ion qubit is trapped. The DC electrode is used to adjust the spatial position of the ion qubit.

6. The ion quantum bit addressing system according to claim 5, characterized in that, The spintronic device array is distributed within the projection of the ion trapping potential well, and the control module is distributed within the projection of the spintronic device array.

7. The ion quantum bit addressing system according to claim 1, characterized in that, The surface chip ion trap is configured as follows: Based on the local magnetic field network, the ionic qubits are controlled to undergo Zeeman splitting to determine the transition frequency.

8. The ion quantum bit addressing system according to claim 1, characterized in that, The ion quantum bit addressing system further includes a control signal transmission component, which is configured to: A preset quantum state control signal is emitted globally, and the preset quantum state control signal includes a laser signal or a microwave signal; The ionic qubit that resonates with the preset quantum state control signal is identified as the target ionic qubit, wherein the transition frequency of the target ionic qubit resonates with the quantum state control signal.

9. A method for addressing ion qubits, characterized in that, The method is based on the ion qubit addressing system as described in any one of claims 1-8, and the method includes: Based on the obtained quantum manipulation requirements, determine the electrical signal control sequence; The local magnetic field network is determined based on the electrical signal control sequence; The transition frequency of the ion qubits is controlled according to the local magnetic field network so that the ion qubit addressing system can complete qubit addressing according to the transition frequency.

10. The method according to claim 9, characterized in that, The step of determining the local magnetic field network based on the electrical signal control sequence includes: The direction of the magnetic field in the free layer of the target spintronic device unit is controlled according to the electrical signal control sequence. The local magnetic field is determined based on the magnetic field direction of the free layer in the target spintronic device unit; The local magnetic field network is determined based on the local magnetic field.

11. The method according to claim 9, characterized in that, Controlling the transition frequency of ion qubits according to the local magnetic field network includes: Based on the local magnetic field network, the ionic qubits are controlled to undergo Zeeman splitting to determine the transition frequency.

12. The method according to claim 9, characterized in that, The method further includes: A preset quantum state control signal is emitted globally, and the preset quantum state control signal includes a laser signal or a microwave signal; The ionic qubit that resonates with the preset quantum state control signal is identified as the target ionic qubit, wherein the transition frequency of the target ionic qubit resonates with the quantum state control signal.

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