Preparation method of photoelectric device, photoelectric device and electronic equipment

Abstract

The invention discloses a preparation method of a photoelectric device, the photoelectric device and electronic equipment, and the method comprises the steps: providing a bottom electrode, and forming a functional layer at one side of the bottom electrode; a top electrode is formed on the side, away from the bottom electrode, of the functional layer, the functional layer comprises a first carrier functional layer, and the preparation method of the first carrier functional layer comprises the steps that dispersion liquid containing first metal oxide is provided, electrical aging treatment is conducted on the first metal oxide, and a first carrier functional material is obtained; depositing the first carrier function material; and drying the deposited first carrier function material to obtain the first carrier function layer, thereby being beneficial to improving the performance stability and reliability of the photoelectric device.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a method for preparing an optoelectronic device, an optoelectronic device, and an electronic device. Background Art

[0002] Optoelectronic devices refer to a class of devices made using the photoelectric effect of semiconductors, including but not limited to light-emitting devices, solar cells, or photodetectors. Taking light-emitting devices as an example, light-emitting devices include but are not limited to organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs / QLEDs have a "sandwich" structure, i.e., they include an anode, a cathode, and a light-emitting layer, wherein the anode and the cathode are arranged opposite each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of OLEDs / QLEDs is that electrons are injected from the cathode of the device into the light-emitting region, and holes are injected from the anode of the device into the light-emitting region. The electrons and holes recombine in the light-emitting region to form excitons, and the recombined excitons release photons through radiative transitions, thereby emitting light.

[0003] After years of development, optoelectronic devices have made great progress in performance indicators and have shown great application development potential. However, there are still shortcomings and the performance stability of optoelectronic devices needs to be further improved. Summary of the Invention

[0004] Based on this, the present application provides a method for preparing a photoelectric device, a photoelectric device, and an electronic device.

[0005] In a first aspect, the present application provides a method for preparing a photoelectric device, comprising the following steps:

[0006] providing a bottom electrode, and forming a functional layer on one side of the bottom electrode; and

[0007] forming a top electrode on a side of the functional layer away from the bottom electrode;

[0008] The functional layer includes a first carrier functional layer, and the preparation method of the first carrier functional layer includes the following steps:

[0009] Providing a dispersion containing a first metal oxide, performing an electrical aging treatment on the first metal oxide to obtain a first carrier functional material;

[0010] depositing the first carrier functional material; and

[0011] The deposited first carrier functional material is dried to obtain the first carrier functional layer.

[0012] In a second aspect, the present application further provides an optoelectronic device, comprising:

[0013] A bottom electrode and a top electrode disposed opposite to each other; and

[0014] A first carrier functional layer is provided between the bottom electrode and the top electrode;

[0015] Among them, the material of the first carrier functional layer includes a first metal oxide, the existence form of the oxygen element in the first metal oxide includes lattice oxygen, oxygen vacancies and adsorbed oxygen, and the molar amount of the oxygen vacancies accounts for 20% to 80% of the total molar amount of the lattice oxygen, the oxygen vacancies and the adsorbed oxygen.

[0016] In a third aspect, the present application provides an electronic device, comprising a photoelectric device manufactured by any one of the preparation methods described in the first aspect, or a photoelectric device described in the second aspect.

[0017] The present application provides a method for preparing a photoelectric device, a photoelectric device, and an electronic device, which have the following technical effects:

[0018] In the preparation method of the optoelectronic device, the first metal oxide in the dispersion is subjected to electrical aging treatment, so that the first carrier functional material completes the aging process in the solution state and reaches a stable state in advance. This can improve or avoid the phenomenon of "positive aging effect" in the device caused by changes in the physicochemical properties of the first carrier functional layer when the complete device is powered on, thereby helping to improve the performance stability and reliability of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The following detailed description of the specific embodiments of the present application in conjunction with the accompanying drawings will make the technical solutions and other beneficial effects of the present application apparent.

[0020] Figure 1 A schematic flow chart of a method for preparing a first carrier functional layer provided in an embodiment of the present application;

[0021] Figure 2 A schematic structural diagram of a first optoelectronic device provided in an embodiment of the present application;

[0022] Figure 3 A schematic structural diagram of a second optoelectronic device provided in an embodiment of the present application;

[0023] Figure 4 This is a schematic structural diagram of the third optoelectronic device provided in an embodiment of the present application.

[0024] The reference numerals are as follows:

[0025] 10: Photoelectric device, 101: Bottom electrode, 102: Top electrode, 103: Functional layer, 104: Substrate, 1031: First carrier functional layer, 1032: Light-emitting layer, 1033: Second carrier functional layer, 10331: Hole injection layer, 10332: Hole transport layer. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meanings as those familiar to those skilled in the art. Furthermore, any methods and materials similar or equivalent to those described herein can be applied to the present invention. The preferred embodiments and materials described herein are for illustrative purposes only and are not intended to limit the scope of this application.

[0028] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be understood as a rigid limitation on the scope of the invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0029] In the description of this application, the term "including" means "including but not limited to".

[0030] The term "at least one" means one or more, and "a plurality of" means two or more. The terms "at least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or plural, respectively.

[0031] In the present application, the description of "layer A is formed on one side of layer B" or "layer A is formed on the side of layer B away from layer C" may mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B; it may also mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other film layers may be formed between layer A and layer B.

[0032] The selection scope of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items, and the said any and all combinations include any two related listed items, any more related listed items, or the combination of all related listed items. For example, "A and / or B" includes three parallel solutions of A, B and A+B. For another example, the technical solution of "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (that is, the technical solution connected by "logical OR"), and also includes any and all combinations of A, B, C, and D, that is, the combination of any two or any three of A, B, C, and D, and also includes the four-item combination of A, B, C, and D (that is, the technical solution connected by "logical AND").

[0033] The applicant discovered that optoelectronic devices have a performance decaying or improving phenomenon over time or operating conditions, namely the "negative aging effect" and the "positive aging effect". From the perspective of mass production, both the "negative aging effect" and the "positive aging effect" seriously affect the performance stability of optoelectronic devices, making it difficult to meet reliability requirements. At present, the factors causing the aging effect of optoelectronic devices are not clear. Taking quantum dot light-emitting diodes as an example, factors such as degradation of the hole functional layer, interface charge accumulation, suppression of surface defect states in the electron functional layer, or changes in charge mobility can cause changes in device efficiency, namely: quantum dots, electron transport layers (materials such as undoped or doped zinc oxide) and their adjacent interfaces have poor electrical aging stability when powered on; some lattice-mismatched oxygen ions in zinc oxide (undoped or doped) act as electron defects and can cause exciton quenching, but under the resistance switching effect of zinc oxide (undoped or doped), the internal lattice-mismatched oxygen ions are converted into activated oxygen ions and oxygen vacancies. In the initial stage of power-on of the quantum dot light-emitting diode, due to the reduction of electron defects and the increase of oxygen vacancies in zinc oxide (undoped or doped), exciton quenching is effectively suppressed and the conductivity of zinc oxide (undoped or doped) is improved, so the device efficiency is significantly improved, that is, the "positive aging effect" of the device. In addition, in quantum dot light-emitting diodes, the electron transport layer and the cathode undergo a slow chemical reaction at the interface, producing metal oxides and oxygen vacancies. The produced metal oxides can reduce the electron injection barrier and serve as an interface modification layer to inhibit interface exciton quenching. The produced oxygen vacancies can improve the conductivity of undoped or doped zinc oxide, which is also the cause of the "positive aging effect".

[0034] The applicant has discovered that in order to avoid the negative impact of the "positive aging effect" on device reliability and performance stability, the "positive aging effect" of the device can be advanced to the device preparation stage. Based on this, the present application provides a method for preparing an optoelectronic device, including but not limited to a light-emitting device, a solar cell, or a photodetector, and comprising the following steps:

[0035] S1. providing a bottom electrode and forming a functional layer on one side of the bottom electrode;

[0036] S2. Form a top electrode on a side of the functional layer away from the bottom electrode.

[0037] Wherein, the functional layer includes a first carrier functional layer, such as Figure 1 As shown, the preparation method of the first carrier functional layer includes the following steps:

[0038] S11, providing a dispersion containing a first metal oxide, and performing an electrical aging treatment on the first metal oxide to obtain a first carrier functional material;

[0039] S12, depositing a first carrier functional material;

[0040] S13, drying the deposited first carrier functional material to obtain a first carrier functional layer.

[0041] In the preparation method of the optoelectronic device of the embodiment of the present application, the first metal oxide in the dispersion is subjected to electrical aging treatment, thereby reducing the electronic defects of the first metal oxide and increasing the oxygen vacancies of the first metal oxide, so that the first carrier functional material completes the aging process in the solution state and reaches a stable state in advance. This can improve or avoid the phenomenon of "positive aging effect" in the device caused by changes in the physicochemical properties of the first carrier functional layer (exciton quenching inhibition and conductivity enhancement) in the complete device when it is powered on, thereby helping to improve the performance stability and reliability of the optoelectronic device.

[0042] It should be noted that, compared with first depositing a wet film comprising a first metal oxide and then subjecting the wet film to an electrical treatment, or subjecting the wet film to an electrical treatment during the process of depositing a wet film comprising the first metal oxide, the preparation method of the first carrier functional layer in the embodiment of the present application has an advantage: it can improve the electrical aging uniformity of the first metal oxide, thereby improving the performance stability of the first carrier functional layer, and further improving the performance stability and reliability of the optoelectronic device.

[0043] In some embodiments of the present application, the electrical aging treatment includes the steps of: passing a dispersion containing a first metal oxide through a channel of a reaction device under an electrical condition, the reaction device being, for example, a microfluidic device, which has the following technical effects: the microfluidic device includes a channel with a microstructure, which can provide a closed reaction space under controlled conditions, greatly improving the electrical aging efficiency of the first metal oxide, and because process parameters such as the fluid flow rate in the channel, the fluid flow time, the ambient temperature inside the channel, and the current density inside the channel can be controlled, it can ensure that the first carrier functional material has good batch repeatability and stability, which is conducive to improving the performance consistency of the optoelectronic device; microfluidics can provide a continuous flow reaction for the preparation of the first carrier functional material, which can meet the demand for a large supply of the first carrier functional material. It should be noted that the microfluidic device can be, for example, the microfluidic chip described in Chinese patent application CN116408163A or Chinese patent application CN116351482A.

[0044] In some embodiments of the present application, the channels of the microfluidic device can be straight-through pipes or 3D pipes with a concave-convex structure on the inner surface. It should be noted that, under conditions of the same pipe diameter and length, the inner surface area of ​​the 3D pipe is larger than that of the straight-through pipe. Furthermore, when the flow rate and flow time of the dispersion are constant, the electrical aging of the dispersion in the 3D pipe is more complete and rapid, which is conducive to improving the uniformity and efficiency of the electrical aging of the first metal oxide in the dispersion.

[0045] In order to further improve the electrical aging effect of the first metal oxide, in some embodiments of the present application, the inner diameter of the channel is 0.1mm~5mm, for example, 0.1mm, 1mm, 2mm, 3mm, 4mm, 5mm or a value between any two of the foregoing values, which can take into account the improvement of the electrical aging efficiency and electrical aging sufficiency of the first metal oxide and reduce the risk of channel blockage.

[0046] In some embodiments of the present application, during the electrical aging treatment, the flow rate of the dispersion is 5nL / min to 100mL / min, for example, 5nL / min, 10nL / min, 50nL / min, 100nL / min, 5mL / min, 10mL / min, 20mL / min, 30mL / min, 40mL / min, 50mL / min, 60mL / min, 70mL / min, 80mL / min, 90mL / min, 100mL / min or a value between any two of the foregoing values, and / or the flow time of the dispersion inside the channel is 1min to 50h, for example, 1min, 30min, 1h, 5h, 10h, 20h, 30h, 40h, 50h or a value between any two of the foregoing values, which can take into account both improving the efficiency and sufficiency of electrical aging. It can be understood that, under the premise that the structural specifications of the channel, the environmental conditions inside the channel, the current density inside the channel and the components of the dispersion are constant, increasing the flow rate of the dispersion can shorten the flow time of the dispersion, and conversely, reducing the flow rate of the dispersion can extend the flow time of the dispersion; controlling the flow time of the dispersion within the aforementioned range can ensure the electrical aging effect of the first metal oxide and improve the electrical aging efficiency of the first metal oxide.

[0047] In some embodiments of the present application, the ambient temperature inside the channel is -40°C to 60°C, for example, -40°C, -30°C, -20°C, -10°C, 0°C, 10°C, 20°C, 30°C, 40°C, 50°C, 60°C or a value between any two of the foregoing values, which can take into account the improvement of the electrical aging activity and electrical aging efficiency of the first metal oxide, and facilitate the control of the electrical aging degree of the first metal oxide.

[0048] In some embodiments of the present application, the current density inside the channel is 0.1 mA / cm 2 ~10000mA / cm 2 , for example 0.1 mA / cm 2 , 1mA / cm 2 , 10mA / cm 2 , 100mA / cm 2 , 1000mA / cm 2, 10000mA / cm 2 Or a value between any two of the aforementioned values ​​can take into account both improving the electrical aging efficiency and electrical aging sufficiency of the first metal oxide. It is understood that when the structural specifications of the channel, the ambient temperature inside the channel, and the composition of the dispersion liquid are all constant, controlling the current density within the aforementioned range can ensure the electrical aging effect of the first metal oxide and improve the electrical aging efficiency of the first metal oxide.

[0049] In order to facilitate the control of the degree of electrical aging of the first metal oxide, in some embodiments of the present application, during the electrical aging treatment, the preparation method of the first carrier functional layer further includes the steps of: detecting the oxygen vacancy content of the first metal oxide; and / or, in some embodiments of the present application, the existence form of the oxygen element in the first metal oxide includes lattice oxygen, oxygen vacancies and adsorbed oxygen, and when the molar amount of the oxygen vacancies accounts for 20% to 80% of the total molar amount of the lattice oxygen, the oxygen vacancies and the adsorbed oxygen, the electrical aging treatment of the first metal oxide is stopped. It should be noted that those skilled in the art can use conventional methods to detect the oxygen vacancy content of the first metal oxide, for example, X-ray photoelectron spectroscopy (XPS) can be used to detect the oxygen vacancy content of the first metal oxide. It can be understood that the type of the first metal oxide and the synthesis process parameters are key influencing factors for the maximum value of the oxygen vacancy content.

[0050] To further improve the performance stability of optoelectronic devices, in some embodiments of the present application, the electrical aging treatment is stopped when the oxygen vacancy content of the first metal oxide reaches a maximum value. If the electrical aging treatment is continued after the oxygen vacancy content of the first metal oxide reaches a maximum value, the oxygen vacancy content of the first metal oxide remains substantially unchanged.

[0051] Specifically, in step S11, the dispersion containing the first metal oxide can be a product of first metal oxide nanoparticles synthesized by a low-temperature (temperature of, for example, -20°C to 60°C) solution method, the average particle size of the first metal oxide is, for example, 2nm to 12nm, and the surface of the first metal oxide is connected with one or more ligands selected from carboxyl groups, hydroxyl groups, thiol groups, and alcohol ether groups.

[0052] In some embodiments of the present application, the metal element in the first metal oxide is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals, and transition metals.

[0053] In some embodiments of the present application, the dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds, amide compounds and sulfone compounds, wherein alkanes include but are not limited to one or more of nonane, decane, dodecane, terpane, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, aromatic hydrocarbons include but are not limited to one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride, alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, ether compounds include but are not limited to ethylene glycol monomethyl ether, furan compounds include but are not limited to tetrahydrofuran, pyridine compounds include but are not limited to pyridine, amide compounds include but are not limited to N,N-dimethylformamide, and sulfone compounds include but are not limited to dimethyl sulfoxide. As an example, the dispersant of the dispersion liquid is ethanol.

[0054] In order to improve both the density of the first carrier functional layer and the dispersion performance of the first metal oxide in the dispersion, in some embodiments of the present application, the concentration of the first metal oxide in the dispersion is 10 mg / mL to 50 mg / mL, for example, 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL or a value between any two of the foregoing values.

[0055] In order to form a conductive path in the microfluidic micro-channel to improve the electrical aging uniformity of the first metal oxide in the dispersion, in some embodiments of the present application, the dispersion further contains a first compound, which is one or more of graphene and doped graphene, and the doping element in the doped graphene is selected from one or more of N, P, S, O, B, Cr, Mo, Li, K, Mg and Al.

[0056] In some embodiments of the present application, for doped graphene, the molar number of the doping element accounts for 1% to 15% of the total molar number of all elements in the doped graphene, for example, it can be 1%, 3%, 5%, 8%, 10%, 12%, 15%, or a value between any two of the foregoing values. It should be noted that pure graphene (i.e., intrinsic graphene) has a low conductivity. To improve the conductivity of pure graphene, specific elements can be doped into the pure graphene to modify it to obtain the doped graphene; by regulating the proportion of the doping element, the conductivity of the doped graphene can be improved while avoiding changes in the morphology and solubility of the graphene, thereby further controlling the degree of electrical aging of the first metal oxide.

[0057] In some embodiments of the present application, the mass ratio of the first metal oxide to the first compound in the dispersion is 1:(0.000001-0.1), for example, 1:0.000001, 1:0.00001, 1:0.0001, 1:0.001, 1:0.01, 1:0.1, or a value between any two of the foregoing values, which can form an effective conductive path within the dispersion and reduce the risk of the first compound remaining in the first carrier functional layer, thereby reducing or eliminating the negative impact of the residual first compound on the photoelectric performance and device life of the optoelectronic device. It is understood that in the first carrier functional material, the mass ratio of the first metal oxide to the first compound is 1:(0.000001-0.1).

[0058] In step S12, the deposition method of the first carrier functional material includes but is not limited to one or more of spin coating, printing, inkjet printing, doctor blade coating, printing, dip-coating, immersion, spraying, roll coating, casting, slit coating, strip coating and electrodeposition.

[0059] In step S13, the "drying treatment" includes all processes that can enable the deposited first carrier functional material to obtain higher energy and transform into a solidified film, including but not limited to one or more of natural air drying treatment, heat treatment, vacuum drying treatment, laser annealing treatment, electron beam annealing treatment, atomic annealing treatment and microwave irradiation annealing treatment.

[0060] Continuing to refer to step S1 and step S2, in step S1 and step S2, one of the bottom electrode and the top electrode is an anode and the other is a cathode. In order to improve the comprehensive performance of the optoelectronic device, in some embodiments of the present application, the materials of the bottom electrode and the top electrode are, for example, independently selected from one or more of metals, carbon materials, and second metal oxides, wherein the metals include but are not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, and Mg; the carbon materials include but are not limited to one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the second metal oxide may be doped or undoped, including but not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), and magnesium-doped zinc oxide (MZO). The bottom electrode or the top electrode may also be a composite electrode having a "sandwich" structure, wherein the materials of the upper and lower layers are respectively doped or undoped transparent metal oxides, and the material of the middle layer is a metal, for example, one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thickness of the bottom electrode and the top electrode is, for example, independently selected from 20 nm to 300 nm.

[0061] In some embodiments of the present application, the optoelectronic device is a light-emitting device, and the functional layer includes a light-emitting layer. The step of forming the functional layer on one side of the bottom electrode in step S1 includes forming the light-emitting layer between the bottom electrode and the first carrier functional layer, or between the first carrier functional layer and the top electrode. The light-emitting layer can be a single layer, or can be two or more layers, with a thickness of, for example, 10 nm to 100 nm. The material of the light-emitting layer includes, for example, one or more of an organic light-emitting material and quantum dots.

[0062] Among them, the organic light-emitting materials include but are not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delay materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials. One or more.

[0063] Quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and may include, but are not limited to, one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots may be 2 nm to 20 nm, for example, 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0064] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell quantum dots or the material of the shell of the core-shell quantum dots are, but are not limited to, at least one of II-VI compounds, III-V compounds, III-VI compounds, IV-VI compounds or I-III-VI compounds, wherein the II-VI compounds are, but are not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and / or group III-V compounds include but are not limited to GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb , one or more of AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InNPs, InNAs, InNSb, InPAs, InPSb, GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and / or Group III-VI compounds include but are not limited to one or more of In2S3, In2Se3, InGaS3 and InGaSe3, and / or Group IV-VI compounds include but are not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and / or group I-III-VI compounds include but are not limited to one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2 and CuInGaS2.It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structured quantum dots, or the material of the shell of the core-shell structured quantum dots, the chemical formula provided only indicates the elemental composition, but does not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd. x Zn 1-x Se,0 <x<1。

[0065] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, including but not limited to Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0066] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a formamidinium group, and M is a divalent metal cation, including but not limited to Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0067] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) nNH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0068] In order to improve the solution processing performance of quantum dots and further enhance the luminous efficiency of optoelectronic devices, in some embodiments of the present application, ligands are further connected to the surface of quantum dots. The ligands can be commonly used in the art, including but not limited to ligands containing hydroxyl, amino, thiol, carboxyl, C1-C 30 Fatty carboxylic acid ligands, C6~C 30 Aromatic carboxylic acid ligands, C1~C 30 Fatty thiol ligands, C6~C 30 Thiol aromatic ligands, C1~C 30 Fatty amine ligands, C6~C 30 Aromatic amine ligands, C1~C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0069] Among them, C1~C 30 The fatty carboxylic acid ligands include, but are not limited to, one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6-C 30 The aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, bibenzoic acid, and 1-naphthoic acid. 30 The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecanyl mercaptan, C6-C 30 The thiol aromatic ligands include but are not limited to one or more of benzenethiol, triphenylmethylthiol and terphenyl-4,4"-dithiol.30 The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine, C6-C 30 The aromatic amine ligands include but are not limited to one or more of aniline, indenepropylamine, 4-octylaniline and benzidine. 30 The aliphatic phosphine ligands include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, C6~C 30 The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C6~C 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and diphenyl ethyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I or -Br.

[0070] It can be understood that when the optoelectronic device is a light-emitting device, the optoelectronic device can be an upright structure or an inverted structure, and the optoelectronic device can be a top emission type or a bottom emission type, and the first carrier functional layer can be an electron functional layer or a hole functional layer.

[0071] In some embodiments of the present application, the first carrier functional layer is an electronic functional layer, and the first metal oxide is selected from doped or undoped zinc oxide, doped or undoped titanium oxide, doped or undoped tin oxide, doped or undoped barium oxide, doped or undoped tantalum oxide, doped or undoped aluminum oxide, and doped or undoped zirconium oxide. When the first metal oxide is a doped metal oxide, the doping metal element of the first metal oxide is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium, and tin. The undoped first metal oxide is, for example, selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2. The doped first metal oxide is, for example, selected from one or more of zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, lithium zinc oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and titanium lithium oxide, with Zn being an example. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn(1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0<x≤0.5.

[0072] Furthermore, the method for preparing the optoelectronic device further includes the step of forming a second carrier functional layer between the anode and the first carrier functional layer, the second carrier functional layer being a hole functional layer, and the thickness of the second carrier functional layer being, for example, 10 nm to 100 nm. It is understood that when the optoelectronic device is a light-emitting device with an upright structure, the step of forming the functional layers on one side of the bottom electrode includes sequentially forming the second carrier functional layer, the light-emitting layer, and the first carrier functional layer on one side of the bottom electrode; and when the optoelectronic device is a light-emitting device with an inverted structure, the step of forming the functional layers on one side of the bottom electrode includes sequentially forming the first carrier functional layer, the light-emitting layer, and the second carrier functional layer on one side of the bottom electrode. It should be noted that when the material of the second carrier functional layer is a metal oxide, the method for preparing the second carrier functional layer can refer to the method for preparing the first carrier functional layer.

[0073] The material of the second carrier functional layer includes, but is not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexyano-1,4,5,8,9,12-hexaazatriphenylene, 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine] , 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(N,N'-bis(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4'- Tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N ,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, one or more of the non-doped first inorganic compound and the doped second inorganic compound.The non-doped first inorganic compound includes, but is not limited to, one or more of graphene, C60, nickel oxide (e.g., NiO), molybdenum oxide (e.g., MoO3), tungsten oxide (e.g., WO3), vanadium oxide (e.g., V2O5), P-type gallium nitride, chromium oxide (e.g., Cr2O3), copper oxide (e.g., CuO or Cu2O), copper sulfide (e.g., CuS), molybdenum sulfide (e.g., MoS2), and tungsten sulfide (e.g., WS2); and / or, the doped second inorganic compound is a host inorganic compound doped with the first doping element, the host The inorganic compounds include but are not limited to one or more of graphene, C60, nickel oxide (e.g., NiO), molybdenum oxide (e.g., MoO3), tungsten oxide (e.g., WO3), vanadium oxide (e.g., V2O5), P-type gallium nitride, chromium oxide (e.g., Cr2O3), copper oxide (e.g., CuO or Cu2O), copper sulfide (e.g., CuS), molybdenum sulfide (e.g., MoS2) and tungsten sulfide (e.g., WS2), and / or the first doping element includes but is not limited to one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0074] As an alternative embodiment, in other embodiments of the present application, the first carrier functional layer is a hole functional layer, and the first metal oxide is selected from one or more of doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped chromium oxide and doped or undoped copper oxide. When the first metal oxide is a doped metal oxide, the doping element of the first metal oxide is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0075] Furthermore, the method for preparing the optoelectronic device further includes the step of forming a second carrier functional layer between the cathode and the first carrier functional layer, the second carrier functional layer being an electronic functional layer, and the thickness of the second carrier functional layer being, for example, 10 nm to 100 nm. It is understood that when the optoelectronic device is a light-emitting device with an upright structure, the step of forming the functional layers on one side of the bottom electrode includes sequentially forming the first carrier functional layer, the light-emitting layer, and the second carrier functional layer on one side of the bottom electrode; and when the optoelectronic device is a light-emitting device with an inverted structure, the step of forming the functional layers on one side of the bottom electrode includes sequentially forming the second carrier functional layer, the light-emitting layer, and the first carrier functional layer on one side of the bottom electrode. It should be noted that when the material of the second carrier functional layer is a metal oxide, the method for preparing the second carrier functional layer can refer to the method for preparing the first carrier functional layer.

[0076] Among them, the material of the second carrier functional layer includes a third inorganic compound, and the third inorganic compound includes but is not limited to one or more of a non-doped third metal oxide, a doped fourth metal oxide, a II-VI semiconductor material, a III-V semiconductor material, and a I-III-VI semiconductor material. Among them, the undoped third metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or the doped fourth metal oxide is a main metal oxide doped with a second doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, the second doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn, and / or the molar percentage of the second doping element in the doped fourth metal oxide is less than 50%; and / or the II-VI group semiconductor material is selected from one or more of ZnS, ZnSe and CdS; and / or the III-V group semiconductor material is selected from one or more of InP and GaP; and / or the I-III-VI group semiconductor material is selected from one or more of CuInS and CuGaS. The doped fourth metal oxide is, for example, one or more selected from zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0<x≤0.5.

[0077] It should be noted that, in addition to the first carrier functional layer, the preparation methods of other layers in the optoelectronic device include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition and co-precipitation. The physical method includes but is not limited to physical plating and solution method. The physical plating method includes but is not limited to one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. The solution method includes but is not limited to one or more of spin coating, printing, inkjet printing, doctor blade coating, printing, dip pulling, immersion, spraying, roller coating, casting, slit coating and strip coating.

[0078] The present application also provides a photoelectric device, which can be manufactured using any of the above-mentioned manufacturing methods. Figure 2 and Figure 3 As shown, the optoelectronic device 10 includes a bottom electrode 101, a top electrode 102, and a functional layer 103. The bottom electrode 101 and the top electrode 102 are disposed opposite each other, and the functional layer 103 is disposed between the bottom electrode 101 and the top electrode 102. The functional layer 103 includes a first carrier functional layer 1031. The first carrier functional layer 1031 is an electron functional layer or a hole functional layer. The material of the first carrier functional layer 1031 includes a first metal oxide. The oxygen element in the first metal oxide exists in the form of lattice oxygen, oxygen vacancies, and adsorbed oxygen. The molar amount of the oxygen vacancies accounts for 20% to 80% of the total molar amount of the lattice oxygen, the oxygen vacancies, and the adsorbed oxygen. The structures and compositions of the bottom electrode 101 and the top electrode 102 are described above.

[0079] In some embodiments of the present application, the material of the first carrier functional layer also includes a first compound, the first compound is one or more of graphene and doped graphene, and the doping element in the doped graphene is selected from one or more of N, P, S, O, B, Cr, Mo, Li, K, Mg and Al.

[0080] In order to improve the performance stability and reliability of optoelectronic devices, in some embodiments of the present application, the mass ratio of the first metal oxide to the first compound is 1:(0.000001~0.1), for example, it can be 1:0.000001, 1:0.00001, 1:0.0001, 1:0.001, 1:0.01, 1:0.1 or a value between any two of the foregoing values.

[0081] In some embodiments of the present application, for doped graphene, the molar number of the doping element accounts for 1% to 15% of the total molar number of all elements in the doped graphene, for example, it can be 1%, 3%, 5%, 8%, 10%, 12%, 15% or a value between any two of the foregoing values. By regulating the proportion of the doping elements, the morphology of the graphene can be controlled to improve the performance stability and reliability of the optoelectronic device.

[0082] In some embodiments of the present application, in the first metal oxide of the first carrier functional layer, the molar ratio of oxygen vacancies, lattice oxygen, and adsorbed oxygen is 1:(0.25~0.35):(0.0002~0.1), that is, the molar ratio of oxygen vacancies:lattice oxygen:adsorbed oxygen is 1:(0.25~0.35):(0.0002~0.1).

[0083] In some embodiments of the present application, the optoelectronic device 10 is a light emitting device. Figure 2 and Figure 3 The functional layer 103 further includes a light-emitting layer 1032, which is disposed between the first carrier functional layer 1031 and the bottom electrode 101 ( Figure 2 As shown) or the light emitting layer 1032 is provided between the first carrier functional layer 1031 and the top electrode 102 ( Figure 3 ). It can be understood that when the first carrier functional layer 1031 is an electron functional layer and the optoelectronic device 10 is an upright structure, the light-emitting layer 1032 is disposed between the first carrier functional layer 1031 and the bottom electrode 101; when the first carrier functional layer 1031 is an electron functional layer and the optoelectronic device 10 is an inverted structure, the light-emitting layer 1032 is disposed between the first carrier functional layer 1031 and the top electrode 102; when the first carrier functional layer 1031 is a hole functional layer and the optoelectronic device 10 is an upright structure, the light-emitting layer 1032 is disposed between the first carrier functional layer 1031 and the top electrode 102; when the first carrier functional layer 1031 is a hole functional layer and the optoelectronic device 10 is an inverted structure, the light-emitting layer is disposed between the first carrier functional layer 1031 and the bottom electrode 101.

[0084] In order to further improve the comprehensive performance of the optoelectronic device 10, in some embodiments of the present application, the functional layer further includes a second carrier functional layer, and the second carrier functional layer is arranged between the first carrier functional layer and the bottom electrode or between the first carrier functional layer and the top electrode. When the optoelectronic device 10 is a light-emitting device, continue to refer to Figure 2 and Figure 3The second carrier functional layer 1033 is disposed between the light-emitting layer 1032 and the bottom electrode 101 or between the light-emitting layer 1032 and the top electrode 102. One of the first carrier functional layer 1031 and the second carrier functional layer 1033 is an electron functional layer, and the other is a hole functional layer. The materials of the electron functional layer and the hole functional layer can be referred to the above description.

[0085] It can be understood that when the first carrier functional layer 1031 is an electron functional layer and the optoelectronic device 10 is an upright structure, the second carrier functional layer 1033 is a hole functional layer, and the second carrier functional layer 1033 is arranged between the light-emitting layer 1032 and the bottom electrode 101; when the first carrier functional layer 1031 is an electron functional layer and the optoelectronic device 10 is an inverted structure, the second carrier functional layer 1033 is a hole functional layer, and the second carrier functional layer 1033 is arranged between the light-emitting layer 1032 and the bottom electrode 101. 032 and the top electrode 102; when the first carrier functional layer 1031 is a hole functional layer and the optoelectronic device 10 is an upright structure, the second carrier functional layer 1033 is an electron functional layer, and the second carrier functional layer 1033 is arranged between the light-emitting layer 1032 and the top electrode 102; when the first carrier functional layer 1031 is a hole functional layer and the optoelectronic device 10 is an inverted structure, the second carrier functional layer 1033 is arranged between the light-emitting layer 1032 and the bottom electrode 101.

[0086] In addition, the electronic functional layer can be a single-layer structure or a multi-layer structure. The electronic functional layer includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For an electronic functional layer including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode than the hole blocking layer.

[0087] The hole functional layer can be a single-layer structure or a multi-layer structure. The hole functional layer includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For a hole functional layer including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode than the electron blocking layer.

[0088] The present application also provides an electronic device, comprising an optoelectronic device produced by any of the methods for producing an optoelectronic device described above, or an electronic device comprising any of the optoelectronic devices described above. The electronic device may be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a car display, a television, or an e-book reader, wherein the smart wearable device may be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0089] The technical solutions and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0090] Example 1

[0091] This embodiment provides a photoelectric device and a method for preparing the same. The photoelectric device is a quantum dot light emitting diode with an upright structure, such as Figure 4 As shown, in the direction from bottom to top, the photoelectric device 10 includes a substrate 104, a bottom electrode 101, a functional layer 103 and a top electrode 102 stacked in sequence, wherein the bottom electrode 101 is an anode and the top electrode 102 is a cathode; in the direction from bottom to top, the functional layer 103 includes a second carrier functional layer 1033, a light-emitting layer 1032 and a first carrier functional layer 1031 stacked in sequence, wherein the second carrier functional layer 1033 is a hole functional layer, and the second carrier functional layer 1033 is composed of a hole injection layer 10331 and a hole transport layer 10332 stacked in sequence, the hole injection layer 10331 is closer to the bottom electrode 101 than the hole transport layer 10332, and the first carrier functional layer 1031 is an electron functional layer.

[0092] The materials and thicknesses of the various layers in the optoelectronic device 10 are as follows:

[0093] The material of the substrate 104 is glass, and the thickness of the substrate 104 is 2 mm;

[0094] The material of the bottom electrode 101 is ITO, and the thickness of the anode 11 is 20 nm;

[0095] The material of the top electrode 102 is Ag, and the thickness of the cathode 12 is 80 nm;

[0096] The material of the light-emitting layer 1032 is CdSe / ZnS quantum dots, the light-emitting color is red, and the thickness is 20 nm;

[0097] The material of the hole injection layer 10331 is PEDOT:PSS, and the thickness of the hole injection layer 10331 is 30 nm;

[0098] The material of the hole transport layer 10332 is TFB, and the thickness of the hole transport layer 10332 is 30 nm;

[0099] The material of the first carrier functional layer 1031 includes nano-ZnMgO and doped graphene. The doping element in the doped graphene is phosphorus, and the molar number of the doping element accounts for 3% of the total molar number of all elements in the doped graphene. The mass ratio of nano-ZnMgO to doped graphene in the first carrier functional layer 1031 is 1:0.01, and the thickness of the first carrier functional layer 1031 is 30 nm.

[0100] The method for preparing the optoelectronic device in this embodiment includes the following steps:

[0101] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove surface impurities visible to the naked eye, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, acetone for 15 minutes, ethanol for 15 minutes, and isopropyl alcohol for 15 minutes. After drying, perform a UV-ozone surface treatment for 15 minutes to obtain a substrate including a bottom electrode;

[0102] S1.2. In an air environment at room temperature and pressure, spin-coat a PEDOT:PSS aqueous solution (PEDOT:PSS mass percentage of 20%) on the side of the bottom electrode away from the substrate, and then heat-treat at 150°C to solidify the film to form a hole injection layer;

[0103] S1.3. Under a nitrogen atmosphere at room temperature and pressure, spin-coat an 8 mg / mL TFB-chlorobenzene solution on the side of the hole injection layer away from the anode. Heat-treat the solution at 170°C to cure the film and form a hole transport layer.

[0104] S1.4. Under a nitrogen atmosphere at room temperature and pressure, spin-coat a 20 mg / mL CdSe / ZnS quantum dot-n-octane solution on the side of the hole transport layer away from the hole injection layer. Heat-treat the solution at 80°C to cure the solution and form a light-emitting layer.

[0105] S1.5. Under a nitrogen environment at room temperature and pressure, spin-coat a first carrier functional material on the side of the light-emitting layer away from the hole transport layer, and then heat-treat the material at 80°C to cure the material into a film, thereby obtaining an electronic functional layer.

[0106] S1.6, place the prefabricated device after step S1.5 in an air pressure of 4×10 -6In the mbar evaporation chamber, Ag is thermally evaporated on the side of the electron transport layer away from the light-emitting layer through a mask plate to obtain a top electrode, which is then encapsulated with epoxy resin glue and cover glass to obtain a photovoltaic device.

[0107] The preparation method of the first carrier functional material comprises the following steps:

[0108] S1.51. Place 3 L of a 0.3 mol / L zinc acetate dihydrate-DMF solution (N,N-dimethylformamide as solvent) and 0.53 L of a 0.3 mol / L magnesium acetate tetrahydrate-DMF solution (N,N-dimethylformamide as solvent) in a reaction vessel and mix them evenly. Then, at room temperature and pressure, inject 3.3 L of a 0.3 mol / L potassium hydroxide-ethanol solution (ethanol as solvent) into the zinc acetate dihydrate-DMF solution in the reaction vessel over 2 minutes and continue stirring for 1 hour to obtain a mixture containing nano-ZnMgO.

[0109] S1.52. Take 50 mL of the mixture containing nano-ZnMgO obtained in step S1.15, add 120 mL of ethyl acetate to the mixture, mix to obtain a first mixed system, then centrifuge the first mixed system at 2000 g, and collect to obtain a first precipitate; then, disperse the first precipitate in 10 mL of ethanol, then add 25 mL of heptane, mix to obtain a second mixed system, then centrifuge the second mixed system at 2000 g, and collect to obtain 200 mg of a second precipitate, which is purified nano-ZnMgO; then, mix and disperse the purified nano-ZnMgO and doped graphene in ethanol at a mass ratio of purified nano-ZnMgO:doped graphene of 1:0.01 to obtain a dispersion, wherein the concentration of nano-ZnMgO in the dispersion is 30 mg / mL;

[0110] S1.53. The dispersion was passed through a channel of a microfluidic device for electrical aging. The channel was a straight-through pipe with an inner diameter of 2.5 mm. The flow rate of the dispersion was 20 mL / min. The ambient temperature inside the channel was 15°C. The current density inside the channel was 500 mA / cm 2 The flow time of the dispersion inside the channel is 30 minutes to make the oxygen vacancy content of nano-ZnMgO in the dispersion reach the maximum value (that is, the proportion of oxygen vacancy content in the three oxygen forms is 72%), and the dispersion that completes the electrical aging treatment is the first carrier functional material.

[0111] Example 2

[0112] This embodiment provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the photoelectric device in this embodiment is different in that the oxygen vacancy content of the nano-ZnMgO in the first carrier functional layer is different.

[0113] Compared with the preparation method of the photoelectric device in Example 1, the preparation method of the photoelectric device in this embodiment is different in that: the current density inside the channel in step S1.53 is set to 500 mA / cm 2 " is replaced by "The current density inside the channel is 100mA / cm 2 ", the oxygen vacancy content of nano-ZnMgO in the prepared first carrier functional material did not reach the maximum value, that is, the proportion of oxygen vacancy content in the three oxygen forms was 65%.

[0114] Example 3

[0115] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the method for preparing the photoelectric device in Example 1, the only difference between the method for preparing the photoelectric device in this embodiment and the method for preparing the photoelectric device in Example 1 is that the current density inside the channel in step S1.53 is set to 500 mA / cm 2 " is replaced by "The current density inside the channel is 1000mA / cm 2 ”.

[0116] Example 4

[0117] This embodiment provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the difference of the photoelectric device in this embodiment is that the mass ratio of nano-ZnMgO to doped graphene in the first carrier functional layer is 1:0.000001.

[0118] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: the step S1.52 "mixing and dispersing the purified nano-ZnMgO and doped graphene in ethanol at a mass ratio of purified nano-ZnMgO: doped graphene of 1:0.01 to obtain a dispersion" is replaced by "mixing and dispersing the purified nano-ZnMgO and doped graphene in ethanol at a mass ratio of purified nano-ZnMgO: doped graphene of 1:0.000001 to obtain a dispersion".

[0119] Example 5

[0120] This embodiment provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the difference of the photoelectric device in this embodiment is that the mass ratio of nano-ZnMgO to doped graphene in the first carrier functional layer is 1:0.1.

[0121] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: the step S1.52 "mixing and dispersing the purified nano-ZnMgO and doped graphene in ethanol at a mass ratio of purified nano-ZnMgO: doped graphene of 1:0.01 to obtain a dispersion" is replaced by "mixing and dispersing the purified nano-ZnMgO and doped graphene in ethanol at a mass ratio of purified nano-ZnMgO: doped graphene of 1:0.1 to obtain a dispersion".

[0122] Example 6

[0123] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Example 1, the difference of the photoelectric device in this embodiment is that the doping element in the doped graphene is replaced with "boron", and the percentage of the molar number of the doping element to the total molar number of all elements in the doped graphene remains unchanged.

[0124] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Example 1.

[0125] Example 7

[0126] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Example 1, the difference of the photoelectric device in this embodiment is that the doping element in the doped graphene is replaced with "sulfur", and the percentage of the molar number of the doping element to the total molar number of all elements in the doped graphene remains unchanged.

[0127] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Example 1.

[0128] Example 8

[0129] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Example 1, the difference of the photoelectric device in this embodiment is that the percentage of the molar number of the doping element to the total molar number of all elements in the doped graphene is replaced from "3%" to "0.5%".

[0130] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Example 1.

[0131] Example 9

[0132] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Example 1, the difference of the photoelectric device in this embodiment is that the percentage of the molar number of the doping element to the total molar number of all elements in the doped graphene is replaced from "3%" to "10%".

[0133] The preparation method of the optoelectronic device in this embodiment is carried out with reference to Example 1.

[0134] Comparative Example 1

[0135] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the photoelectric device in this comparative example is different only in that the oxygen vacancy content of the nano-ZnMgO in the first carrier functional layer is different.

[0136] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.5 is replaced by "under a nitrogen environment at room temperature and normal pressure, spin-coating the dispersion prepared in step S1.52 on the side of the light-emitting layer away from the hole transport layer, and then placing it at a constant temperature heat treatment of 80°C to solidify into a film to obtain an electronic functional layer", and the first carrier functional material is not involved.

[0137] Comparative Example 2

[0138] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the photoelectric device in this comparative example is different only in that the material of the first carrier functional layer is nano-ZnMgO.

[0139] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.5 is replaced by "dispersing the purified nano-ZnMgO obtained in step S1.52 in ethanol to obtain a nano-ZnMgO-ethanol dispersion with a concentration of 30 mg / mL, and then spin-coating the nano-ZnMgO-ethanol dispersion on the side of the light-emitting layer away from the hole transport layer under a nitrogen environment at room temperature and pressure, and then placing it at 80°C for constant temperature heat treatment to solidify into a film to obtain an electronic functional layer", and the first carrier functional material is not involved.

[0140] Experimental example

[0141] The performance of the optoelectronic devices in Examples 1 to 9 and Comparative Examples 1 and 2 was tested, and IVL optical characteristic measurement equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connecting wires and data cards, efficiency test cassettes and data acquisition systems and other components to build an efficiency test system) was used to detect and obtain the parameters such as the start-up voltage, current, brightness, and luminous spectrum of each light-emitting device, and then calculate and obtain key parameters such as external quantum efficiency and power efficiency, and use life test equipment to test the device life of each of the above-mentioned optoelectronic devices. In addition, each optoelectronic device was monitored at a constant current density (64 mA / cm 2) is a curve showing the change of brightness over time under the condition of IR, where the time taken for each photoelectric device to reach the maximum brightness from the initial brightness is the length of the rising segment of the life curve. The shorter the rising segment of the life curve, the weaker the "forward aging effect" of the photoelectric device, and the better the reliability and performance stability of the photoelectric device.

[0142] The current efficiency test method is: set the luminous area to 2mm×2mm=4mm 2 , intermittently collect the brightness value of the light-emitting device with a driving voltage range of 0V to 8V. The initial voltage value of the brightness is 3V, and the data is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the photoelectric device under the collection conditions, and the current efficiency (CE max , cd / A), the maximum current efficiency is the device current efficiency when the brightness of the device reaches the maximum value in the lifetime curve.

[0143] The device life test method includes the following steps: 2 ) driven by a QLED life test system, the electroluminescent lifetime of each light-emitting device was analyzed, and the time required for each light-emitting device to decay from the maximum brightness to 95% (T95, h) was recorded.

[0144] The performance test data of each optoelectronic device at 25°C is detailed in Table 1 below:

[0145] Table 1 Summary of performance test data of photoelectric devices in Examples 1 to 9 and Comparative Examples 1 and 2

[0146]

[0147]

[0148] Please refer to Table 1. For the photovoltaic devices of the upright structure, the comprehensive performance of the photovoltaic devices in Examples 1 to 9 is superior to that of the photovoltaic devices in Comparative Examples 1 and 2. Specifically, the reliability and performance stability of the photovoltaic devices in Examples 1 to 9 are better. Taking the photovoltaic device in Example 1 as an example, the CE max is the CE of the optoelectronic device in Comparative Example 1 max The T95 of the photoelectric device in Example 1 is 1.3 times that of the photoelectric device in Comparative Example 1, and the T95 of the photoelectric device in Example 1 is 1.12 times that of the photoelectric device in Comparative Example 1, and the duration of the rising section of the life curve of the photoelectric device in Example 1 is only 8.3% of the duration of the rising section of the life curve of the photoelectric device in Comparative Example 1.

[0149] It can be seen from this that during the preparation of the first carrier functional layer, the first metal oxide in the dispersion is first subjected to an electrical aging treatment, thereby reducing the electronic defects of the first metal oxide and increasing the oxygen vacancies of the first metal oxide, so that the first carrier functional material completes the aging process in the solution state and reaches a stable state in advance. This can improve or avoid the phenomenon of the "positive aging effect" of the device caused by the change of the physicochemical properties of the first carrier functional layer (exciton quenching inhibition and conductivity enhancement) in the complete device when it is powered on, which is beneficial to improving the performance stability and reliability of the optoelectronic device. In the preparation methods of the optoelectronic devices of Comparative Examples 1 and 2, the nano ZnMgO was not subjected to electrical aging treatment, and the resulting optoelectronic devices had a significant "positive aging effect", resulting in a decrease in the reliability and performance stability of the optoelectronic devices.

[0150] The above is a detailed introduction to a method for preparing a photoelectric device, a photoelectric device, and an electronic device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a photoelectric device, characterized in that: The steps include: providing a bottom electrode, and forming a functional layer on one side of the bottom electrode; and forming a top electrode on a side of the functional layer away from the bottom electrode; The functional layer includes a first carrier functional layer, and the preparation method of the first carrier functional layer includes the following steps: Providing a dispersion containing a first metal oxide, and performing an electrical aging treatment on the first metal oxide to obtain a first carrier functional material; depositing the first carrier functional material; and The deposited first carrier functional material is dried to obtain the first carrier functional layer.

2. The preparation method according to claim 1, characterized in that The average particle size of the first metal oxide is 2 nm to 12 nm; and / or During the electrical aging treatment, the method for preparing the first carrier functional layer further comprises the steps of: detecting the oxygen vacancy content of the first metal oxide; and / or The oxygen element in the first metal oxide exists in the form of lattice oxygen, oxygen vacancies and adsorbed oxygen, and when the molar amount of the oxygen vacancies accounts for 20% to 80% of the total molar amount of the lattice oxygen, the oxygen vacancies and the adsorbed oxygen, the electrical aging treatment of the first metal oxide is stopped; and / or The electrical aging treatment comprises the steps of: passing the dispersion through a channel of a reaction device under an electrified condition.

3. The preparation method according to claim 2, characterized in that The reaction device is a microfluidic device; and / or In the step of passing the dispersion through the channel of the reaction device under the condition of power supply, the inner diameter of the channel is 0.1 mm to 5 mm, and / or the flow rate of the dispersion is 5 nL / min to 100 mL / min, and / or the flow time of the dispersion inside the channel is 1 min to 50 h, and / or the ambient temperature inside the channel is -40°C to 60°C, and / or the current density inside the channel is 0.1 mA / cm 2 ~10000mA / cm 2 and / or When the oxygen vacancy content of the first metal oxide reaches a maximum value, the electrical aging treatment is stopped.

4. The preparation method according to claim 1, characterized in that The dispersion further comprises a first compound, which is one or more of graphene and doped graphene, and the doping element in the doped graphene is selected from one or more of N, P, S, O, B, Cr, Mo, Li, K, Mg and Al.

5. The preparation method according to claim 4, characterized in that In the dispersion, the mass ratio of the first metal oxide to the first compound is 1:(0.000001-0.1); and / or In the doped graphene, the molar number of the doping element accounts for 1% to 15% of the total molar number of all elements in the doped graphene.

6. The preparation method according to claim 1, characterized in that The metal element in the first metal oxide is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals; and / or In the dispersion, the concentration of the first metal oxide is 1 mg / mL to 100 mg / mL; and / or The dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds, amide compounds and sulfone compounds; optionally, the alkane is selected from one or more of nonane, decane, dodecane, terpane, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, and / or the aromatic hydrocarbon is selected from one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or One or more of indene, and / or the halogenated alkane is selected from one or more of dichloromethane, chloroform and carbon tetrachloride, and / or the alcohol compound is selected from one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, and / or the ether compound is selected from ethylene glycol monomethyl ether, and / or the furan compound is selected from tetrahydrofuran, and / or the pyridine compound is selected from pyridine, and / or the amide compound is selected from N,N-dimethylformamide, and / or the sulfone compound is selected from dimethyl sulfoxide; and / or The materials of the bottom electrode and the top electrode are independently selected from one or more of a metal, a carbon material, and a second metal oxide, the metal being selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, and Mg, the carbon material being selected from one or more of graphite, carbon nanotubes, graphene, and carbon fibers, and the second metal oxide being selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide; and / or The step of forming a functional layer on one side of the bottom electrode comprises: forming a light-emitting layer between the bottom electrode and the first carrier functional layer or between the first carrier functional layer and the top electrode; wherein the material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials One or more of a material, a TTA material, a thermally activated delay material, a polymer containing BN covalently bonded, a hybrid localized charge transfer excited state material, and an exciplex luminescent material; and / or, the quantum dots are selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, and the core-shell structure quantum dots include one or more shell layers; the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots, and the material of the shell of the core-shell structure quantum dots are independently selected from at least one of II-VI compounds, III-VI compounds, III-V compounds, IV-VI compounds, or I-III-VI compounds;Wherein, the II-VI compound is selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, Hg SeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHg One or more of SeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and / or the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , one or more of GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and / or the III-VI group compound is selected from one or more of In2S3, In2Se3, InGaS3 and InGaSe3, and / or the IV-VI group compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnS one or more of SnTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the I-III-VI group compound is selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2 and CuInGaS2; and / or the inorganic perovskite quantum dot has a general structural formula of AMX3, wherein A is Cs; + , M is a divalent metal cation, M is selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a formamidinium group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is selected from an organic amine cation.

7. The preparation method according to any one of claims 1 to 6, characterized in that The first carrier functional layer is an electronic functional layer, and the first metal oxide is selected from doped or undoped zinc oxide, doped or undoped titanium oxide, doped or undoped tin oxide, doped or undoped barium oxide, doped or undoped tantalum oxide, doped or undoped aluminum oxide and doped or undoped zirconium oxide, wherein, when the first metal oxide is a doped metal oxide, the doping metal element of the first metal oxide is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium and tin.

8. The preparation method according to claim 7, characterized in that One of the bottom electrode and the top electrode is an anode, and the other is a cathode; the method for preparing the photoelectric device further comprises the steps of: forming a second carrier functional layer between the anode and the first carrier functional layer, wherein the material of the second carrier functional layer comprises poly (3,4-ethylenedioxythiophene): poly (styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexyano-1,4,5,8,9,12-hexaazatriphenylene, 3-hexyl substituted polythiophene, poly (9-vinyl carbazole), 4,4'-bis (9-carbazole) biphenyl, poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4' -cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(N,N'-di(4-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine-co-9,9-dioctylfluorene), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl- N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, non- One or more of a doped first inorganic compound and a doped second inorganic compound; wherein the undoped first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide; and / or, the doped second inorganic compound is a host inorganic compound doped with a first doping element, the host inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the first doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the first doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

9. The preparation method according to any one of claims 1 to 6, characterized in that The first carrier functional layer is a hole functional layer, and the first metal oxide is selected from one or more of doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped chromium oxide and doped or undoped copper oxide; when the first metal oxide is a doped metal oxide, the doping element of the first metal oxide is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

10. The preparation method according to claim 9, characterized in that One of the bottom electrode and the top electrode is an anode, and the other is a cathode; the method for preparing the photoelectric device further comprises the steps of: forming a second carrier functional layer between the cathode and the first carrier functional layer, the material of the second carrier functional layer comprises a third inorganic compound, the third inorganic compound comprises one or more of a non-doped third metal oxide, a doped fourth metal oxide, a II-VI semiconductor material, a III-V semiconductor material and a I-III-VI semiconductor material; wherein the non-doped third metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or the doped fourth metal oxide is a second doping element A doped main metal oxide, wherein the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, the second doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn, and / or the molar percentage of the second doping element in the doped fourth metal oxide is less than 50%; and / or the II-VI group semiconductor material is selected from one or more of ZnS, ZnSe and CdS; and / or the III-V group semiconductor material is selected from one or more of InP and GaP; and / or the I-III-VI group semiconductor material is selected from one or more of CuInS and CuGaS.

11. A photoelectric device, characterized in that: include: A bottom electrode and a top electrode are arranged opposite to each other; as well as A first carrier functional layer is provided between the bottom electrode and the top electrode; Among them, the material of the first carrier functional layer includes a first metal oxide, the existence form of the oxygen element in the first metal oxide includes lattice oxygen, oxygen vacancies and adsorbed oxygen, and the molar amount of the oxygen vacancies accounts for 20% to 80% of the total molar amount of the lattice oxygen, the oxygen vacancies and the adsorbed oxygen.

12. The optoelectronic device according to claim 11, wherein: The material of the first carrier functional layer further includes a first compound; the first compound is one or more of graphene and doped graphene, and the doping element in the doped graphene is selected from one or more of N, P, S, O, B, Cr, Mo, Li, K, Mg and Al; and / or The material of the first carrier functional layer is composed of a first metal oxide and a first compound, and the mass ratio of the first metal oxide to the first compound is 1:(0.000001-0.1); and / or In the doped graphene, the molar amount of the doping element accounts for 1% to 15% of the total molar amount of all elements in the doped graphene; and / or In the first metal oxide, the molar ratio of the oxygen vacancies, the lattice oxygen and the adsorbed oxygen is 1:(0.25-0.35):(0.0002-0.1); and / or The first carrier functional layer is an electronic functional layer, and the first metal oxide is selected from doped or undoped zinc oxide, doped or undoped titanium oxide, doped or undoped tin oxide, doped or undoped barium oxide, doped or undoped tantalum oxide, doped or undoped aluminum oxide and doped or undoped zirconium oxide, wherein, when the first metal oxide is a doped metal oxide, the doping metal element of the first metal oxide is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium and tin; and / or The first carrier functional layer is a hole functional layer, and the first metal oxide is selected from one or more of doped or undoped nickel oxide, doped or undoped molybdenum oxide, doped or undoped tungsten oxide, doped or undoped vanadium oxide, doped or undoped chromium oxide, and doped or undoped copper oxide; when the first metal oxide is a doped metal oxide, the doping element of the first metal oxide is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements; and / or The optoelectronic device further comprises a second carrier functional layer disposed between the bottom electrode and the top electrode; one of the first carrier functional layer and the second carrier functional layer is an electron functional layer, and the other is a hole functional layer; and / or The optoelectronic device further includes a light-emitting layer, which is arranged between the bottom electrode and the first carrier functional layer or between the first carrier functional layer and the top electrode. The material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dots.

13. An electronic device, characterized in that: The invention comprises a photoelectric device prepared by the preparation method according to any one of claims 1 to 10, or a photoelectric device according to claim 11 or 12.

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