Filtering power divider with independently controllable cut-off frequency and power distribution

Abstract

The invention discloses a filtering power divider with independently controllable cut-off frequency and power distribution, and belongs to the technical field of microwave communication. Wherein the copper-clad layer, the dielectric layer I, the metal column layer I, the dielectric layer II, the metal column layer II and the substrate integrated waveguide are sequentially arranged from bottom to top, and each layer is provided with two rows of cylindrical through holes and is fixed through positioning screws; the inner wall of the cylindrical through hole is coated with copper to form a side electric wall. The sandwich structure is introduced into the ESSPP in the substrate integrated waveguide to excite the ESSPP mode so as to independently control the cut-off frequency of the filtering power divider, and the capabilities of compact structure, low loss, independently controllable cut-off frequency and controllable power distribution are realized; a cut-off frequency is determined for each layer, independent passband and out-of-band control are ensured, and the power distribution ratio is flexibly controlled by setting the thickness of the bottom layer waveguide and the thickness of the top layer waveguide.

Description

Technical Field

[0001] The present invention belongs to the technical field of microwave communications, and in particular relates to a filtering power divider with independently controllable cutoff frequency and power distribution. Background Art

[0002] With the rapid development of modern wireless communication technology, RF systems are placing higher demands on miniaturization, low loss, and high performance in signal processors. In RF front-end systems, power splitters and filters serve as core modules, responsible for signal distribution and frequency selection, respectively. Filter power splitters that integrate these two functions not only simplify system architecture and reduce insertion loss, but also improve system spectrum efficiency, making them a key research area for microwave communication devices.

[0003] Currently, various filter power divider design methods have been proposed. For example, substrate-integrated waveguide (SIW) filter power dividers include a novel substrate-integrated waveguide (SIW) four-way inverted filter power divider proposed by Wang Xu et al., which uses a symmetrical structure to reduce amplitude and phase imbalances. A three-way filter power divider based on a multilayer substrate-integrated waveguide (SIW) designed by G. Zhang et al. achieves a dual-mode, three-way filtering response. However, both designs suffer from insufficient passband selectivity and large structural dimensions. A four-way power divider based on SIW and an eight-mode SIW cavity proposed by M. Danaeian and P. Mousavi et al., while compact and with good broadband out-of-band rejection, suffers from insufficient frequency selectivity. A lumped-element broadband filter power divider designed by W. Zhao et al. using low-temperature co-fired ceramic (LTCC) technology achieves stopband extension and ultra-broadband out-of-band rejection due to the harmonic-free nature of quasi-lumped elements. However, its manufacturing process is complex, costly, and has limited power handling capability.

[0004] Consequently, microwave devices based on artificial surface plasmons (ESPPs) have attracted attention in recent years due to their unique electromagnetic control capabilities. While traditional SPP structures rely on excitation of metal surface ripples, ESPPs achieve similar effects by manipulating the dielectric constant, making them suitable for planar circuit design. However, existing ESPP filter power dividers often suffer from cutoff frequency coupling, making it difficult to independently control passband and stopband characteristics, and lacking flexibility in power allocation.

[0005] In summary, the existing filter power divider design still has the following problems: (1) Cutoff frequency coupling: it is difficult to independently adjust the upper and lower stopbands, which affects the frequency selectivity; (2) Fixed power distribution: most designs only support equal power distribution, which is difficult to adapt to the needs of different application scenarios; (3) Structural complexity and loss: multi-layer integration or LTCC process leads to high manufacturing costs and increased losses.

[0006] In view of this, this application is hereby filed. Summary of the Invention

[0007] The purpose of the present invention is to provide a filter power divider with independently controllable cutoff frequency and power distribution. By jointly exciting the equivalent surface plasmon-like polariton (ESSPP) mode through substrate integrated waveguide and multilayer structure, the upper and lower cutoff frequencies of the passband can be independently controlled, and the power can be distributed equally or unequally, thereby effectively solving the above-mentioned problems.

[0008] Technical solution: A filter power divider with independently controllable cutoff frequency and power distribution, comprising a copper clad layer, a dielectric layer 1, a metal column layer 1, a dielectric layer 2, a metal column layer 2, and a substrate integrated waveguide, arranged in order from bottom to top. Each layer is provided with two rows of cylindrical through holes and is fixed by positioning screws.

[0009] The inner wall of the cylindrical through hole is covered with copper to form a side electrical wall;

[0010] The upper and lower surfaces of the substrate integrated waveguide are respectively a dielectric substrate top layer and a dielectric substrate bottom layer. The dielectric substrate top layer is provided with a first microstrip line and a second microstrip line. One end of the first microstrip line is a feeding port and is connected to a metal ground layer through a first microwave high-frequency connector joint, and the other end is connected to the metal ground layer through the second microstrip line and a second microwave high-frequency connector joint. The dielectric substrate bottom layer completely covers the metal ground layer.

[0011] In a further embodiment, the dielectric layer 1 includes a dielectric substrate 1, a second rectangular air groove and a surface copper sheet 1, wherein the second rectangular air groove is located at both ends of the dielectric substrate 1, and the sidewalls are covered with copper.

[0012] Through the above technical solution, the filter's ability to adjust the lower passband characteristics is enhanced, and the selectivity of the passband edge and the out-of-band suppression effect are further improved, which is conducive to achieving high-performance bandpass response.

[0013] In a further embodiment, the metal column layer is in a "V" shape, including a dielectric layer, a plurality of air gaps are spaced apart on the dielectric layer, the sidewalls of the air gaps are covered with a copper sheet, the copper sheet and the dielectric layer constitute a metal column, and the metal column is spaced apart between two rows of cylindrical through holes.

[0014] Through the above technical solution, the control method of the cutoff frequency in the passband is optimized, the electromagnetic coupling and reflection interface effects are enhanced, and the filter has better passband cutoff edge characteristics and sensitive frequency response adjustment capabilities.

[0015] In a further embodiment, the second dielectric layer includes a second dielectric substrate, a first rectangular air groove and a second surface copper sheet, wherein the first rectangular air groove is located at both ends of the second dielectric substrate, and the sidewalls are covered with copper.

[0016] The above technical solution helps to improve the shaping ability of the passband edge frequency, and at the same time, combined with the surface copper sheet to form a stable electromagnetic boundary, thereby enhancing the bandpass filtering characteristics.

[0017] In a further embodiment, an upper metal strip is provided at the bottom of the second dielectric layer, and a lower metal strip is provided at the top of the first dielectric layer, and the metal strips are arranged at intervals.

[0018] Through the above technical solution, a cavity coupling structure can be effectively formed, the stability of the longitudinal electromagnetic mode can be enhanced, and leakage and stray modes can be suppressed, thereby improving the overall transmission efficiency and filtering performance of the power divider.

[0019] In a further embodiment, the metal column layer 2 is "V"-shaped, including a dielectric 2, on which a plurality of air gaps 2 are spaced apart, and the sidewalls of the air gaps 2 are covered with a copper sheet 2, and the copper sheet 2 and the dielectric 2 constitute a metal column 2.

[0020] Through the above technical solution, the ability to precisely control the upper cutoff frequency is further enhanced, the controllability of the filter spectrum is improved, and diverse bandwidth requirements are met.

[0021] In a further embodiment, a surface copper sheet three is provided on the substrate integrated waveguide, the surface copper sheet three is provided with two rows of cylindrical through holes and is fixed by the positioning screws, and the inner wall of the cylindrical through hole is covered with copper to form a side electrical wall.

[0022] Through the above technical solution, it is ensured that the filter has good waveguide boundary constraint capabilities, and the copper cladding on the inner wall of the through hole forms a strong reflective electric wall, which effectively suppresses radiation loss and improves the electromagnetic compatibility and energy conduction efficiency of the overall structure.

[0023] In a further embodiment, the dielectric layer 1 is further provided with a third microstrip line and a third microwave high-frequency connector joint.

[0024] Through the above technical solution, the filtered signal can be extracted through the third microstrip line and the second microwave high-frequency connector joint and the third microwave high-frequency connector joint.

[0025] In a further embodiment, the first microstrip line, the second microstrip line and the third microstrip line all adopt a composite structure of a long microstrip line and a symmetrical trumpet-shaped tapered microstrip line.

[0026] Through the above technical solution, good impedance matching and smooth energy transition can be achieved, the reflection of the feeding port can be effectively reduced, the S11 parameter performance can be improved, and the overall coupling efficiency and in-band stability can be enhanced.

[0027] In a further embodiment, the cutoff frequency in the passband is controlled by the width of the through-holes of the substrate integrated waveguide and the dielectric layer 1; the cutoff frequency in the passband is controlled by the width of the through-holes of the metal column layer 1 and the metal column layer 2, so as to achieve separate adjustment of the upper and lower cutoff frequencies.

[0028] Through the above technical solution, the adjustment mechanism gives the filter the ability to design the passband frequency band with high freedom, giving it the potential for dual-frequency and multi-band expansion, which is conducive to adapting to various communication systems with different frequency band requirements and improving the versatility of devices and module integration.

[0029] Compared with the prior art, the present invention has the following beneficial effects:

[0030] (1) By introducing the sandwich structure into the ESPP in the substrate integrated waveguide, the ESSPP mode is excited to independently control the cutoff frequency of the filter power divider, achieving a compact structure, low loss, independent controllable cutoff frequency and controllable power distribution;

[0031] (2) Filter power divider using rectangular waveguide technology to achieve independent controllable cutoff frequency, flexible and controllable power distribution, compact structure and low loss;

[0032] (3) Compared with the ESPP filter power divider, each layer in the present invention determines a cutoff frequency, ensuring independent passband and out-of-band control, and flexibly controlling the power distribution ratio by setting the thickness of the bottom and top waveguides. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a schematic diagram of the front structure of the present invention;

[0034] Figure 2 It is a schematic diagram of the back structure of the present invention;

[0035] Figure 3 A schematic diagram of the structure of the copper clad layer during the bottom-up decomposition process of the present invention;

[0036] Figure 4 A schematic diagram of the structure of the dielectric layer 1 during the bottom-up decomposition process of the present invention;

[0037] Figure 5 Schematic diagram of the structure of the metal column layer 1 during the bottom-up decomposition process of the present invention;

[0038] Figure 6 A schematic diagram of the structure of the dielectric layer 2 during the bottom-up decomposition process of the present invention;

[0039] Figure 7 A schematic diagram of the structure of the metal pillar layer 2 during the bottom-up decomposition process of the present invention;

[0040] Figure 8 A schematic diagram of the structure of a substrate integrated waveguide during bottom-up decomposition of the present invention;

[0041] Figure 9 is the width W of the two rows of cylindrical through holes in the substrate integrated waveguide in the embodiment of the present invention Ⅴ and W Ⅰ Schematic diagram of the impact on the lower cutoff frequency of the lower passband.

[0042] Figure 10 is the width W of the two rows of cylindrical through holes in the metal column layer 1 in the embodiment of the present invention Ⅳ and W Ⅱ Schematic diagram of the impact on the upper cutoff frequency of the lower passband.

[0043] Figure 11 Schematic diagram of S parameters simulated at 8.05-10.7 GHz in an embodiment of the present invention;

[0044] Figure 12 1 is a power distribution diagram of different thicknesses in an embodiment of the present invention.

[0045] Reference numerals: 1, substrate integrated waveguide; 2, surface copper sheet three; 3, first microstrip line; 4, second microstrip line; 5, third microstrip line; 6, positioning screw; 7, cylindrical through hole; 8, first microwave high-frequency connector joint; 9, second microwave high-frequency connector joint; 10, third microwave high-frequency connector joint;

[0046] 11. Copper cladding;

[0047] 61, dielectric layer 1; 611, dielectric substrate 1; 612, surface copper sheet 1; 613, second rectangular air slot;

[0048] 62. Metal pillar layer 1; 621. Dielectric layer 1; 623. Copper sheet 1; 624. Air gap 1;

[0049] 63, dielectric layer 2; 631, dielectric substrate 2; 632, surface copper sheet 2; 633, first rectangular air slot;

[0050] 64. Metal pillar layer 2; 641. Dielectric layer 2; 642. Air gap 2; 644. Copper sheet 2. DETAILED DESCRIPTION

[0051] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0052] like Figure 1 and Figure 2 As shown, the present application provides a filter power divider with independently controllable cutoff frequency and power distribution, comprising a copper-clad layer 11, a dielectric layer 1 61, a metal column layer 1 62, a dielectric layer 2 63, a metal column layer 2 64, and a substrate integrated waveguide 1, arranged in order from bottom to top. Each layer is provided with two rows of cylindrical through holes 7 and fixed by positioning screws 6. The inner walls of the cylindrical through holes 7 are copper-clad to form side electrical walls. The upper and lower surfaces of the substrate integrated waveguide 1 are respectively the top and bottom surfaces of the dielectric substrate. The top surface of the dielectric substrate is provided with a first microstrip line 3 and a second microstrip line 4. One end of the first microstrip line 3 is a feed port and is connected to the metal ground layer through a first microwave high-frequency connector joint 8. The other end is connected to the metal ground layer through a second microstrip line 4 and a second microwave high-frequency connector joint 9. The bottom surface of the dielectric substrate completely covers the metal ground layer.

[0053] This design introduces an equivalent artificial surface plasmon structure into the multi-layer substrate integrated waveguide 1 system, and combines it with the electric wall design of the side wall of the cylindrical through hole 7. It not only significantly improves the performance of the power divider in terms of miniaturization and low loss, but also can achieve independent control of the passband cutoff frequency and flexible distribution of output power by controlling the thickness of the substrate integrated waveguide 1 and the dielectric layer 61.

[0054] Specifically, such as Figures 3 to 8 As shown, metal pillar layer 1 62 has a V-shaped structure and includes dielectric layer 1 621. Dielectric layer 1 621 is provided with a plurality of spaced air slots 1 624. The air slots 1 624 are 0.3 mm wide. The sidewalls of air slots 1 624 are covered with copper sheets 1 623. Together with dielectric layer 1 621, copper sheets 1 623 and dielectric layer 1 621 form metal pillars 1. The metal pillars 1 are spaced between two rows of cylindrical through-holes 7. By controlling the width of the two rows of cylindrical through-holes 7 in metal pillar layer 1 62, the upper cutoff frequency of the passband can be independently controlled.

[0055] The first metal pillar layer 62 has a V-shaped structure and includes a second dielectric 641. A plurality of second air slots 642 are spaced apart in the second dielectric 641. Each air slot 642 is 0.3 mm wide and is located between two rows of cylindrical through-holes 7 in the second metal pillar layer 64. The sidewalls of the second air slots 642 are covered with a second copper sheet 644. Together with the second dielectric 641, the second copper sheet 644 forms the second metal pillar. By controlling the width of the two rows of cylindrical through-holes 7 in the second metal pillar layer 64, the upper cutoff frequency of the passband can be independently controlled.

[0056] Dielectric layer 1 61 includes dielectric substrate 1 611, second rectangular air slots 613, and surface copper sheet 1 612. Second rectangular air slots 613 are located at both ends of dielectric substrate 1 611, with copper-coated sidewalls. Controlling the width of the two rows of cylindrical through holes 7 in dielectric layer 1 61 enables independent control of the lower cutoff frequency of the passband.

[0057] The second dielectric layer 63 includes a second dielectric substrate 631 , a first rectangular air slot 633 and a second surface copper sheet 632 . The first rectangular air slot 633 is located at both ends of the second dielectric substrate 631 , and the sidewalls are covered with copper.

[0058] A third microstrip line 5 and a third microwave high-frequency connector joint 10 are also provided on the dielectric layer 1 61. The third microstrip line 5 adopts a composite structure of a long microstrip line and a symmetrical trumpet-shaped gradient microstrip line. The dielectric substrate 1 611 connects the third microstrip line 5 and the third microwave high-frequency connector joint 10 as an output port.

[0059] There are microstrips on both sides of the substrate integrated waveguide 1 to transition to the substrate integrated waveguide 1, namely the first microstrip line 3 and the second microstrip line 4. The first microstrip line 3 and the second microstrip line 4 adopt a composite structure of a long microstrip line and a symmetrical trumpet-shaped gradient microstrip line, which is used to achieve good feeding, reduce loss, and obtain better S11 parameters.

[0060] In the above embodiment, the lower cutoff frequency of the lower passband is controlled by simultaneously controlling the widths of the two rows of cylindrical through holes 7 of the substrate integrated waveguide 1 and the dielectric layer 1 61. That is, as the widths of the two rows of cylindrical through holes 7 of the substrate integrated waveguide 1 and the dielectric layer 1 61 continue to increase, the lower cutoff frequency of the lower passband continues to decrease. The upper cutoff frequency of the lower passband is independently controlled by simultaneously controlling the widths of the two rows of cylindrical through holes 7 of the metal column layer 1 62 and the metal column layer 2 64. That is, as the widths of the two rows of cylindrical through holes 7 of the metal column layer 1 62 and the metal column layer 2 64 continue to increase, the upper cutoff frequency of the passband continues to decrease.

[0061] As a preferred embodiment, the copper cladding layer 11 is used to prevent electromagnetic wave leakage and has a relatively low thickness. The substrate-integrated waveguide 1 is provided with a surface copper sheet 3, which is provided with two rows of cylindrical through-holes 7 and secured by the positioning screws 6. The inner walls of the cylindrical through-holes 7 are copper-clad to form side electrical barriers. Each layer also has two rows of copper-clad cylindrical through-holes 7 forming side electrical barriers, achieving excellent transmission performance similar to that of a rectangular waveguide.

[0062] The specific working process of this application is as follows: the signal is fed into the first microwave high-frequency connector joint 8, then passes through the first microstrip line 3, the second microstrip line 4, the dielectric layer 1 61, the metal column layer 1 62, the dielectric layer 2 63, the metal column layer 2 64 and the substrate integrated waveguide 1, and the signal is filtered in the filtering structure. The filtered signal is then extracted through the third microstrip line 5 and the second microwave high-frequency connector joint 9 and the third microwave high-frequency connector joint 10, completing the entire filtering and power distribution process.

[0063] This application reveals its operating mechanism through the dispersion relation of the ESSPPs mode supported on the transmission line. To obtain the dispersion relation, the structure is divided into five layers: dielectric layer 1 61, metal pillar layer 1 62, dielectric layer 2 63, metal pillar layer 2 64, and substrate integrated waveguide 1. During transmission, when the propagation constant in the transmission direction is equal to 0, the dielectric constants of all layers are previously negative. The substrate integrated waveguide 1 and dielectric layer 1 61 begin to become zero and gradually increase, resulting in the first initial cutoff frequency. When the propagation constant in the propagation direction approaches infinity, the equivalent dielectric constants of metal pillar layers 1 62 and 2 64 are zero, resulting in the second frequency, the upper cutoff frequency of the passband. In this way, the ESSPPs waveguide forms a natural bandpass filter.

[0064] Compared to traditional resonator-based filter power dividers, the proposed filter power divider using rectangular waveguide technology generally features independently controllable cutoff frequency, flexible and controllable power distribution, compact structure, and low loss. Compared to ESPP filter power dividers, each layer has a defined cutoff frequency, ensuring independent passband and out-of-band control, and the power distribution ratio can be flexibly controlled by setting the thickness of the bottom and top waveguides. At the same time, due to the completely independent and controllable cutoff frequency, the proposed filter power divider can be expanded to design dual-band or even multi-band designs.

[0065] A layered structure is used in this application, and each layer has an inherent equivalent dielectric constant, which depends on its width and the filling dielectric material. The independent selection of the geometric parameters of each layer or the corresponding dielectric material provides a great degree of freedom to arbitrarily position the passband in the spectrum.

[0066] The present application achieves flexible control of the power distribution ratio by controlling the thickness of the substrate integrated waveguide 1 and the dielectric layer 61.

[0067] The simulation experiment was conducted on the embodiment of the present application, and the verification results are as follows:

[0068] like Figure 9 and Figure 10 As shown, the changes in the cutoff frequencies corresponding to the adjustment of the substrate integrated waveguide 1, the dielectric layer 1 61, the metal column layer 1 62 and the metal column layer 2 64 and the corresponding widths of each layer are respectively shown.

[0069] Figure 9 is the width W of the two rows of cylindrical through holes 7 of the substrate integrated waveguide 1 in the embodiment Ⅰ and the width W of the two rows of cylindrical through holes 7 in the dielectric layer 1 61 Ⅴ Schematic diagram of the effect on the lower cutoff frequency of the passband. It can be seen that as the width of the substrate integrated waveguide 1 and the two rows of cylindrical through holes 7 in the dielectric layer 1 61 increases, the lower cutoff frequency of the passband decreases.

[0070] FIG. 10 is a diagram showing the width W of two rows of cylindrical through holes 7 in a metal column layer 62 according to an embodiment of the present invention. Ⅳ and the width W of the two rows of cylindrical through holes 7 of the metal column layer 2 64 Ⅱ Schematic diagram of the effect on the upper cutoff frequency of the passband. It can be seen that as the width of the two rows of cylindrical through holes 7 in the metal column layer 1 62 and the metal column layer 2 64 increases, the upper cutoff frequency of the passband decreases.

[0071] Figure 11 The following is a schematic diagram of the S-parameters simulated at 8.05-10.7 GHz for this embodiment; it can be seen that the passband has low loss. Theoretical analysis and simulations have proven that the cutoff frequency can be independently controlled and that out-of-band suppression is good.

[0072] Figure 12 2 is a power distribution diagram of different thicknesses in the embodiment. It can be seen that the present application can flexibly control the power distribution ratio.

[0073] The above content is a detailed description of the present invention in conjunction with specific embodiments, and it cannot be considered that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

Claims

1. A filter power divider with independently controllable cutoff frequency and power distribution, characterized by: It includes a copper clad layer, a dielectric layer 1, a metal column layer 1, a dielectric layer 2, a metal column layer 2 and a substrate integrated waveguide arranged in sequence from bottom to top, each layer is provided with two rows of cylindrical through holes and fixed by positioning screws; The inner wall of the cylindrical through hole is covered with copper to form a side electrical wall; The upper and lower surfaces of the substrate integrated waveguide are respectively a dielectric substrate top layer and a dielectric substrate bottom layer. The dielectric substrate top layer is provided with a first microstrip line and a second microstrip line. One end of the first microstrip line is a feeding port and is connected to a metal ground layer through a first microwave high-frequency connector joint, and the other end is connected to the metal ground layer through the second microstrip line and a second microwave high-frequency connector joint. The dielectric substrate bottom layer completely covers the metal ground layer.

2. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 1, characterized in that: The dielectric layer 1 includes a dielectric substrate 1, a second rectangular air groove and a surface copper sheet 1. The second rectangular air groove is located at both ends of the dielectric substrate 1, and the side walls are covered with copper.

3. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 1, characterized in that: The metal column layer is in a "V" shape and includes a dielectric layer. A plurality of air gaps are arranged on the dielectric layer. The sidewalls of the air gaps are covered with a copper sheet. The copper sheet and the dielectric layer constitute a metal column. The metal column is arranged between two rows of cylindrical through holes.

4. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 1, characterized in that: The second dielectric layer includes a second dielectric substrate, a first rectangular air groove and a second surface copper sheet. The first rectangular air groove is located at both ends of the second dielectric substrate, and the side walls are covered with copper.

5. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 1, characterized in that: An upper metal strip is provided at the bottom of the second dielectric layer, and a lower metal strip is provided at the top of the first dielectric layer, and the metal strips are arranged at intervals.

6. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 1, characterized in that: The second metal column layer is V-shaped and includes a second dielectric layer. A plurality of second air gaps are provided on the second dielectric layer. The sidewalls of the second air gaps are covered with a second copper sheet. The second copper sheet and the second dielectric layer constitute a second metal column layer.

7. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 1, characterized in that: The substrate integrated waveguide is provided with a surface copper sheet three, which is provided with two rows of cylindrical through holes and is fixed by the positioning screws. The inner walls of the cylindrical through holes are covered with copper to form side electrical walls.

8. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 2, characterized in that: The dielectric layer 1 is also provided with a third microstrip line and a third microwave high-frequency connector.

9. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 1, characterized in that: The first microstrip line, the second microstrip line and the third microstrip line all adopt a composite structure of a long microstrip line and a symmetrical trumpet-shaped gradient microstrip line.

10. The filter power divider with independently controllable cutoff frequency and power distribution according to claim 1, characterized in that: The cutoff frequency in the passband is controlled by the width of the through-holes of the substrate integrated waveguide and the dielectric layer 1; the cutoff frequency in the passband is controlled by the width of the through-holes of the metal column layer 1 and the metal column layer 2, so as to achieve the adjustment of the upper and lower cutoff frequencies respectively.

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