Copper profile for chip heat sink base and processing technology thereof

Abstract

The present application relates to the technical field of copper profile, in particular to a copper profile for chip radiator base and a processing technology thereof.The present application comprises the following steps: S1: smelting raw materials to obtain alloy cast blank by casting; the alloy cast blank is subjected to hot rolling treatment, solid solution treatment, cold rolling treatment and aging treatment to obtain a copper profile; S2: mixing epoxy resin, organic silicon modified epoxy resin, modified boron nitride nanosheet, alumina, mica powder, dispersing agent, defoaming agent, leveling agent, solvent and curing agent uniformly to obtain a composite heat dissipation coating; S3: taking the copper profile, polishing, cleaning and drying, then coating the composite heat dissipation coating on the surface of the copper profile, and curing to obtain the copper profile for chip radiator base.

Description

Technical Field

[0001] This invention relates to the field of copper profile technology, specifically to a copper profile for a chip heat sink base and its processing technology.

[0002] In modern electronic devices, especially high-performance computers, servers, and various electronic products, the design and performance of chip heat sinks are crucial. With increasing chip integration and power consumption, heat dissipation has become an increasingly prominent issue. As a core component of the heat dissipation system, the materials and manufacturing processes of the heat sink base directly affect heat dissipation efficiency and product reliability.

[0003] Copper is the preferred material for heat sink bases due to its excellent thermal conductivity, good machinability, and corrosion resistance. In high-power-density applications, the heat dissipation capacity of copper profiles can effectively reduce chip temperature, thereby improving system stability and lifespan. To enhance heat sink performance, copper profiles are often subjected to surface treatments such as anodizing, nickel plating, and coating with thermally conductive paints to improve their corrosion resistance and aesthetics. However, anodizing technology suffers from drawbacks such as uneven processing, insufficient adhesion, complex processes, and high energy consumption; while traditional nickel plating processes use harmful heavy metals and organic solvents, causing serious environmental pollution.

[0004] Therefore, we propose a copper profile for chip heat sink base and its processing technology. Summary of the Invention

[0005] The purpose of this invention is to provide a copper profile for a chip heat sink base and its processing technology, so as to solve the problems raised in the prior art.

[0006] To achieve the above objectives, the present invention provides the following technical solution:

[0007] A processing method for a copper profile used in a chip heat sink base includes the following steps:

[0008] Step S1: Melt the raw materials and cast them to obtain an alloy billet; subject the alloy billet to hot rolling, solution treatment, cold rolling, and aging treatment to obtain copper profiles;

[0009] Step S2: Mix epoxy resin, silicone-modified epoxy resin, modified boron nitride nanosheets, alumina, mica powder, dispersant, defoamer, leveling agent, solvent and curing agent evenly to obtain a composite heat dissipation coating;

[0010] Step S3: Take a copper profile, grind, clean and dry it, then coat its surface with a composite heat dissipation coating. After curing, a copper profile for chip heat sink base is obtained.

[0011] Further, the raw material is composed of the following components in mass percentage: Ni: 2-4%, Co: 1-2%, Sb: 0.01-0.02%; Cr: 0.03-0.05%, Ce: 0.01-0.05%, with the balance being Cu.

[0012] Furthermore, the melting temperature is 1050-1200℃.

[0013] Furthermore, the hot rolling temperature is 870-920℃, and the hot rolling deformation is 40-60%.

[0014] Furthermore, the solution treatment temperature is 930-960℃, and the solution treatment time is 1-3h.

[0015] Furthermore, the cold rolling process is carried out at room temperature, and the deformation during the cold rolling process is 85-90%.

[0016] Furthermore, the aging treatment temperature is 450-600℃, and the aging treatment time is 8-12h.

[0017] Furthermore, the composite heat dissipation coating comprises the following components by weight: 40-50 parts epoxy resin, 10-15 parts silicone-modified epoxy resin, 5-10 parts modified boron nitride nanosheets, 8-12 parts alumina, 10-15 parts mica powder, 1-2 parts dispersant, 0.5-1.0 parts defoamer, 1-3 parts leveling agent, 20-30 parts solvent, and 8-12 parts curing agent.

[0018] Furthermore, the preparation steps of the organosilicon-modified epoxy resin are as follows:

[0019] Step A: Under nitrogen protection, magnolol, epichlorohydrin and benzyltriethylammonium chloride are mixed evenly and reacted at 80-90℃ for 3-5 hours. The temperature is then lowered to 45-55℃, sodium hydroxide solution is added, and the reaction continues for 2-3 hours. After rotary evaporation, magnolol epoxy resin is obtained.

[0020] Step B: Mix magnolol epoxy resin, 2-(2-benzimidazolyl)ethanethiol, photoinitiator and tetrahydrofuran evenly, react under ultraviolet light for 1-2 hours, and obtain the intermediate by rotary evaporation;

[0021] Step C: Mix the intermediate, modified organosilicon and tetrahydrofuran evenly, react at room temperature for 22-24 hours, and then obtain organosilicon-modified epoxy resin by rotary evaporation.

[0022] Furthermore, the mass ratio of magnolol, epichlorohydrin, benzyltriethylammonium chloride and sodium hydroxide solution is 1:(2-3):(0.05-0.08):(0.5-1.0), and the concentration of sodium hydroxide solution is 30-40wt%.

[0023] Further, the mass ratio of the magnolol epoxy resin, 2-(2-benzimidazolyl)ethanethiol, photoinitiator and tetrahydrofuran is 1:(0.5-1.0):(0.03-0.05):(2-4).

[0024] Further, the preparation steps of 2-(2-benzimidazolyl)ethanethiol are as follows: 3-mercaptopropionic acid and 1,2-phenylenediamine are mixed, hydrochloric acid solution is added, and the mixture is refluxed at 100°C for 40 h under an argon atmosphere, neutralized, filtered, washed, and dried to obtain 2-(2-benzimidazolyl)ethanethiol.

[0025] Furthermore, the mass ratio of 3-mercaptopropionic acid, 1,2-phenylenediamine, and hydrochloric acid solution is 1:0.8:4, and the concentration of hydrochloric acid solution is 4 mol / L.

[0026] Furthermore, the photoinitiator is 2-hydroxy-2-methyl-1-phenyl-1-propanone.

[0027] Furthermore, the ultraviolet irradiation process conditions are as follows: ultraviolet wavelength of 360-380nm, irradiation intensity of 25-50mW / cm². 2 .

[0028] Furthermore, the mass ratio of the intermediate, modified organosilicon, and tetrahydrofuran is 1:(0.2-0.5):(2-4).

[0029] Furthermore, the method for preparing the modified organosilicon is as follows:

[0030] Under nitrogen protection, 3-(2,3-epoxypropoxy)propyltrimethoxysilane, furfurylamine, and toluene were mixed evenly and reacted at 60-70℃ for 6-8 h. After vacuum distillation, furan-modified silane was obtained. Furan-modified silane, N-(4-aminophenyl)maleimide, and tetrahydrofuran were mixed evenly and stirred at room temperature for 22-24 h. After filtration, washing, and drying, modified organosilicon was obtained.

[0031] In the above technical solution, 3-(2,3-epoxypropoxy)propyltrimethoxysilane (KH-560) is reacted with furfurylamine to synthesize a silane coupling agent molecule containing a furan group, namely furan-modified silane. Then, through a Diels-Alder addition reaction, it reacts with N-(4-aminophenyl)maleimide to introduce the maleimide structure and amino group into the organosilicon, thereby improving the heat resistance and thermal stability, and obtaining modified organosilicon.

[0032] Further, the mass ratio of 3-(2,3-epoxypropoxy)propyltrimethoxysilane, furfurylamine, and toluene is 1:(0.4-0.5):(4-6).

[0033] Furthermore, the mass ratio of the furan-modified silane, N-(4-aminophenyl)maleimide and tetrahydrofuran is 1:(0.5-0.7):(4-6).

[0034] Furthermore, the preparation steps of the modified boron nitride nanosheets are as follows:

[0035] Hydroxylated boron nitride nanosheets were ultrasonically dispersed in a mixed solution of anhydrous ethanol and deionized water. Modified organosilicon was added and mixed evenly. The pH was adjusted to 3-4 using hydrochloric acid, and the reaction was carried out at 60-70℃ for 4-6 hours. After centrifugation, washing, and drying, modified boron nitride nanosheets were obtained.

[0036] Furthermore, the mass ratio of the hydroxylated boron nitride nanosheets to anhydrous ethanol, deionized water, and modified organosilicon is 1:(10-12):(2-4):(0.1-0.3).

[0037] Furthermore, the solvent is one or both of xylene and n-butanol.

[0038] Furthermore, the thickness of the dry film of the composite heat dissipation coating is 100-200 μm.

[0039] Compared with the prior art, the beneficial effects of the present invention are:

[0040] 1. This invention discloses a copper profile for a chip heat sink base and its processing technology. By designing and adjusting the proportions of Ni, Co, Sb, Cr, Ce and P in the copper profile, the synergistic effect of rare earth element Ce with Cr and Ni effectively inhibits grain boundary corrosion. The addition of Sb further optimizes the thermal conductivity and processing performance. The components work together to optimize the microstructure of the copper profile, significantly improving the thermal conductivity of the copper profile. At the same time, it improves the corrosion resistance and mechanical properties of the copper profile of the heat sink, which is superior to traditional pure copper or single alloy systems.

[0041] Based on the above scheme, this invention uses epoxy resin and silicone-modified epoxy resin as the main resins, modified boron nitride nanosheets and alumina as heat dissipation fillers, mica powder as anti-corrosion fillers, and various additives to obtain a heat dissipation coating with excellent thermal conductivity and anti-corrosion properties. In this scheme, a bio-based epoxy resin is synthesized using magnolol, a biomass raw material. The rigid biphenyl structure and flexible allyl group in the magnolol molecule structure endow the resin with excellent comprehensive properties. Then, the magnolol epoxy resin undergoes a mercapto-alkene click reaction with 2-(2-benzimidazolyl)ethanethiol, and the conjugated benzimidazole forms a coordination structure with the copper profile, effectively preventing flash rusting of the metal substrate during film formation. The metal coordination makes the crosslinking reversible, giving the coating excellent self-healing and anti-fouling properties. Finally, the amino groups in the modified organosilicon react with the magnolol epoxy resin to form an interpenetrating network of "rigid skeleton-flexible segments", which greatly improves the heat resistance of the coating. At the same time, the introduction of modified organosilicon reduces the viscosity of the resin system, improves the fluidity of the coating, improves the flexibility of the coating, and reduces the risk of cracking of the coating under temperature changes or mechanical stress.

[0042] To further enhance the thermal conductivity of the heat dissipation coating, this invention utilizes the Si-OH generated from the hydrolysis of Si(OCH3)3 in modified organosilicon to react with the hydroxyl groups on the surface of hydroxylated boron nitride nanosheets, successfully introducing amino groups onto boron nitride. This significantly improves its dispersibility and compatibility in epoxy resin, reduces interfacial thermal resistance, and through size gradient matching between modified BN nanosheets and alumina, combined with the anti-corrosion barrier effect of mica powder, achieves excellent heat dissipation and corrosion resistance of the composite heat dissipation coating. This provides a comprehensive solution for chip heat sink bases that combines high thermal conductivity, long-term corrosion protection, self-healing function, and environmental friendliness. Detailed Implementation

[0043] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0044] In this embodiment, hydroxylated boron nitride nanosheets were purchased from Xianfeng Nano (model XFBN03-2); alumina was purchased from Xianfeng Nano (model XF391); mica powder (particle size 325 mesh) was purchased from Shijiazhuang Fengming Mineral Products Co., Ltd.; epoxy resin (epoxy resin E51, epoxy equivalent 184-194 g / ep) was purchased from Shenzhen Yoshida Chemical Co., Ltd.; defoamer was AFCONA-2727; leveling agent was BYK-3720; dispersant was BYK-163; and curing agent was polyamide 650.

[0045] Unless otherwise specified, all the following quantities are parts by weight.

[0046] In the following examples, the preparation steps of 2-(2-benzimidazolyl)ethanethiol are as follows: 15 parts of 3-mercaptopropionic acid and 12 parts of 1,2-phenylenediamine are mixed, 60 parts of 4 mol / L hydrochloric acid solution are added, and the mixture is refluxed at 100°C for 40 h under an argon atmosphere. After neutralization, filtration, washing, and drying, 2-(2-benzimidazolyl)ethanethiol is obtained.

[0047] Example 1: A processing technology for a copper profile used in a chip heat sink base, comprising the following processes:

[0048] Step S1: Melt the raw materials at a melting temperature of 1050℃, cast and then cool to obtain an alloy billet; subject the alloy billet to hot rolling (hot rolling temperature of 870℃, hot rolling deformation of 40%), solution treatment (solution treatment temperature of 930℃, solution treatment time of 1h), cold rolling (at room temperature, cold rolling deformation of 85%), and aging treatment (aging temperature of 450℃, aging treatment time of 8h) to obtain copper profiles;

[0049] Step S2: Mix 40 parts epoxy resin, 10 parts silicone-modified epoxy resin, 5 parts modified boron nitride nanosheets, 8 parts alumina, 10 parts mica powder, 1 part dispersant, 0.5 parts defoamer, 1 part leveling agent, 20 parts xylene and 8 parts curing agent evenly to obtain a composite heat dissipation coating.

[0050] Step S3: Take a copper profile, grind, clean and dry it, then coat its surface with a composite heat dissipation coating. After curing, a copper profile for chip heat sink base is obtained.

[0051] The raw material consists of the following components by mass percentage: Ni: 2%, Co: 1%, Sb: 0.01%; Cr: 0.03%, Ce: 0.01%, with the balance being Cu;

[0052] The preparation steps of silicone-modified epoxy resin are as follows:

[0053] Step A: Under nitrogen protection, 10 parts magnolol, 20 parts epichlorohydrin and 0.5 parts benzyltriethylammonium chloride are mixed evenly and reacted at 80°C for 3 hours. The temperature is then lowered to 45°C, 5 parts of 30wt% sodium hydroxide solution are added, and the reaction continues for 2 hours. After rotary evaporation, magnolol epoxy resin is obtained.

[0054] Step B: Mix 10 parts of magnolol epoxy resin, 5 parts of 2-(2-benzimidazolyl)ethanethiol, 0.3 parts of 2-hydroxy-2-methyl-1-phenyl-1-propanone, and 20 parts of tetrahydrofuran until homogeneous. React under ultraviolet light for 1 hour. The ultraviolet light wavelength is 360 nm and the irradiation intensity is 50 mW / cm². 2The intermediate was obtained by rotary evaporation;

[0055] Step C: Mix 10 parts of intermediate, 2 parts of modified organosilicon and 20 parts of tetrahydrofuran evenly, react at room temperature for 22 hours, and obtain organosilicon modified epoxy resin by rotary evaporation.

[0056] The preparation method of modified organosilicon is as follows:

[0057] Under nitrogen protection, 2 parts of 3-(2,3-epoxypropoxy)propyltrimethoxysilane, 0.8 parts of furfurylamine, and toluene were mixed evenly and reacted at 60°C for 6 h. After vacuum distillation, furan-modified silane was obtained. 2 parts of furan-modified silane, 1 part of N-(4-aminophenyl)maleimide, and 8 parts of tetrahydrofuran were mixed evenly and stirred at room temperature for 22 h. After filtration, washing, and drying, modified organosilicon was obtained.

[0058] The preparation steps of modified boron nitride nanosheets are as follows:

[0059] Five parts of hydroxylated boron nitride nanosheets were ultrasonically dispersed in a mixed solution of 50 parts anhydrous ethanol and 10 parts deionized water. 0.5 parts of modified organosilicon were added and mixed evenly. The pH was adjusted to 3 using 1 mol / L hydrochloric acid, and the reaction was carried out at 60℃ for 4 h. After centrifugation, washing, and drying, modified boron nitride nanosheets were obtained.

[0060] Example 2: A processing technology for a copper profile used in a chip heat sink base, comprising the following processes:

[0061] Step S1: Melt the raw materials at a melting temperature of 1100℃, cast and then cool to obtain an alloy billet; subject the alloy billet to hot rolling (hot rolling temperature of 900℃, hot rolling deformation of 50%), solution treatment (solution treatment temperature of 950℃, solution treatment time of 2h), cold rolling (at room temperature, cold rolling deformation of 86%), and aging treatment (aging temperature of 500℃, aging treatment time of 10h) to obtain copper profiles;

[0062] Step S2: Mix 45 parts epoxy resin, 12 parts silicone-modified epoxy resin, 8 parts modified boron nitride nanosheets, 10 parts alumina, 12 parts mica powder, 1.5 parts dispersant, 0.8 parts defoamer, 2 parts leveling agent, 25 parts xylene and 10 parts curing agent evenly to obtain a composite heat dissipation coating.

[0063] Step S3: Take a copper profile, grind, clean and dry it, then coat its surface with a composite heat dissipation coating. After curing, a copper profile for chip heat sink base is obtained.

[0064] The raw material consists of the following components by mass percentage: Ni: 3%, Co: 1.5%, Sb: 0.015%; Cr: 0.04%, Ce: 0.03%, with the balance being Cu;

[0065] The preparation steps of silicone-modified epoxy resin are as follows:

[0066] Step A: Under nitrogen protection, 12 parts magnolol, 30 parts epichlorohydrin and 0.8 parts benzyltriethylammonium chloride were mixed evenly and reacted at 85°C for 4 hours. The temperature was then lowered to 50°C, and 9.6 parts of 35wt% sodium hydroxide solution were added. The reaction was continued for 2.5 hours. After rotary evaporation, magnolol epoxy resin was obtained.

[0067] Step B: Mix 12 parts of magnolol epoxy resin, 9.6 parts of 2-(2-benzimidazolyl)ethanethiol, 0.48 parts of 2-hydroxy-2-methyl-1-phenyl-1-propanone, and 36 parts of tetrahydrofuran until homogeneous. React under ultraviolet light for 1.5 hours. The ultraviolet light wavelength is 370 nm and the irradiation intensity is 35 mW / cm². 2 The intermediate was obtained by rotary evaporation;

[0068] Step C: Mix 12 parts of intermediate, 4 parts of modified organosilicon and 36 parts of tetrahydrofuran evenly, react at room temperature for 23 hours, and obtain organosilicon modified epoxy resin by rotary evaporation.

[0069] The preparation method of modified organosilicon is as follows:

[0070] Under nitrogen protection, 4 parts of 3-(2,3-epoxypropoxy)propyltrimethoxysilane, 1.8 parts of furfurylamine, and 20 parts of toluene were mixed evenly and reacted at 65°C for 7 h. After vacuum distillation, furan-modified silane was obtained. 4 parts of furan-modified silane, 2.4 parts of N-(4-aminophenyl)maleimide, and 20 parts of tetrahydrofuran were mixed evenly and stirred at room temperature for 23 h. After filtration, washing, and drying, modified organosilicon was obtained.

[0071] The preparation steps of modified boron nitride nanosheets are as follows:

[0072] Eight parts of hydroxylated boron nitride nanosheets were ultrasonically dispersed in a mixed solution of 88 parts anhydrous ethanol and 24 parts deionized water. 1.6 parts of modified organosilicon were added and mixed evenly. The pH was adjusted to 3.5 using 1 mol / L hydrochloric acid. The mixture was reacted at 65°C for 5 h. After centrifugation, washing, and drying, modified boron nitride nanosheets were obtained.

[0073] Example 3: A processing technology for a copper profile used in a chip heat sink base, comprising the following processes:

[0074] Step S1: Melt the raw materials at a melting temperature of 1200℃, cast and then cool to obtain an alloy billet; subject the alloy billet to hot rolling (hot rolling temperature of 920℃, hot rolling deformation of 60%), solution treatment (solution treatment temperature of 960℃, solution treatment time of 3h), cold rolling (at room temperature, cold rolling deformation of 90%), and aging treatment (aging temperature of 600℃, aging treatment time of 12h) to obtain copper profiles;

[0075] Step S2: Mix 50 parts epoxy resin, 15 parts silicone-modified epoxy resin, 10 parts modified boron nitride nanosheets, 12 parts alumina, 15 parts mica powder, 2 parts dispersant, 1.0 part defoamer, 3 parts leveling agent, 30 parts xylene and 12 parts curing agent evenly to obtain a composite heat dissipation coating.

[0076] Step S3: Take a copper profile, grind, clean and dry it, then coat its surface with a composite heat dissipation coating. After curing, a copper profile for chip heat sink base is obtained.

[0077] The raw material consists of the following components by mass percentage: Ni: 4%, Co: 2%, Sb: 0.02%; Cr: 0.05%, Ce: 0.05%, with the balance being Cu;

[0078] The preparation steps of silicone-modified epoxy resin are as follows:

[0079] Step A: Under nitrogen protection, 15 parts magnolol, 45 parts epichlorohydrin and 1.2 parts benzyltriethylammonium chloride are mixed evenly and reacted at 90°C for 5 hours. The temperature is then lowered to 55°C, 15 parts of 40wt% sodium hydroxide solution are added, and the reaction continues for 3 hours. After rotary evaporation, magnolol epoxy resin is obtained.

[0080] Step B: Mix 15 parts of magnolol epoxy resin, 15 parts of 2-(2-benzimidazolyl)ethanethiol, 0.75 parts of 2-hydroxy-2-methyl-1-phenyl-1-propanone, and 60 parts of tetrahydrofuran until homogeneous. React under ultraviolet light for 2 hours. The ultraviolet light wavelength is 380 nm and the irradiation intensity is 25 mW / cm². 2 The intermediate was obtained by rotary evaporation;

[0081] Step C: Mix 15 parts of intermediate, 7.5 parts of modified organosilicon and 60 parts of tetrahydrofuran evenly, react at room temperature for 24 hours, and obtain organosilicon modified epoxy resin by rotary evaporation.

[0082] The preparation method of modified organosilicon is as follows:

[0083] Under nitrogen protection, 8 parts of 3-(2,3-epoxypropoxy)propyltrimethoxysilane, 4 parts of furfurylamine, and 48 parts of toluene were mixed evenly and reacted at 70°C for 8 hours. After vacuum distillation, furan-modified silane was obtained. 8 parts of furan-modified silane, 5.6 parts of N-(4-aminophenyl)maleimide, and 48 parts of tetrahydrofuran were mixed evenly and stirred at room temperature for 24 hours. After filtration, washing, and drying, modified organosilicon was obtained.

[0084] The preparation steps of modified boron nitride nanosheets are as follows:

[0085] Ten parts of hydroxylated boron nitride nanosheets were ultrasonically dispersed in a mixed solution of 120 parts anhydrous ethanol and 40 parts deionized water. Three parts of modified organosilicon were added and mixed evenly. The pH was adjusted to 4 using 1 mol / L hydrochloric acid, and the reaction was carried out at 70℃ for 6 h. After centrifugation, washing, and drying, modified boron nitride nanosheets were obtained.

[0086] Comparative Example 1: A processing technology for a copper profile used in a chip heat sink base, comprising the following processes:

[0087] Using Example 2 as the control group, Comparative Example 1 replaced the modified boron nitride nanosheets with the same mass of hydroxylated boron nitride nanosheets, and the other steps were the same as in Example 2.

[0088] Comparative Example 2: A processing technology for a copper profile used in a chip heat sink base, comprising the following processes:

[0089] Example 2 was used as the control group. Comparative Example 2 did not introduce 2-(2-benzimidazolyl)ethanethiol, and the other steps were the same as in Example 2.

[0090] Comparative Example 3: A processing technology for a copper profile used in a chip heat sink base, comprising the following processes:

[0091] Using Example 2 as the control group, Comparative Example 3 replaced the modified organosilicon with the same mass of 3-aminopropyltriethoxysilane, and the other steps were the same as in Example 2.

[0092] Comparative Example 4: A processing technology for a copper profile used in a chip heat sink base, comprising the following processes:

[0093] Using Example 2 as the control group, the raw materials of Comparative Example 4 consisted of the following components by mass percentage: Ni: 3%, Co: 1.5%, Sb: 0.015%; Cr: 0.04%, with the balance being Cu; other steps were the same as in Example 2.

[0094] Testing experiment:

[0095] 1. Take the copper profiles for chip heat sink bases obtained in Examples 1-3 and Comparative Examples 1-3, prepare samples, determine the tensile strength according to standard ASTM E8M-04, and conduct tensile tests using a tensile testing machine at a tensile rate of 50 mm / min.

[0096] 2. Take the copper profiles for chip heat sink bases obtained in Examples 1-3 and Comparative Examples 1-3, prepare samples, and test their corrosion resistance according to the neutral salt spray resistance standard (GB / T 1771-2007). Test parameters: NaCl mass fraction 5%, relative humidity 99.9%, salt spray time 480h.

[0097] 3. Take the composite heat dissipation coatings obtained in Examples 1-3 and Comparative Examples 1-3, and apply a 100 μm thick coating to the surface of a tetrafluoroethylene (PTFE) sample using a coater. After the coating has cured, peel it off from the PTFE surface to prepare a 25 mm diameter sample. The thermal diffusivity α of the composite material is tested using a laser thermal conductivity meter, the density ρ of the composite material is measured using a densitometer, and the specific heat Cp of the composite material is tested using a differential scanning calorimeter. The thermal conductivity of the composite material is calculated as follows: λ = α × Cp × ρ.

[0098] The test results are as follows:

[0099]

[0100] Based on the data in the table above, the following conclusions can be clearly drawn:

[0101] 1. Compared with Examples 1-3, the corrosion resistance and thermal conductivity of the products obtained in Comparative Examples 1, 2 and 3 all decreased, indicating that the modified boron nitride nanosheets prepared by the present invention have better compatibility and heat resistance, thereby improving the thermal conductivity and corrosion resistance of the material. At the same time, by introducing 2-(2-benzimidazolyl)ethanethiol, the present invention can synergistically improve the corrosion resistance of honokiol epoxy resin with modified organosilicon.

[0102] 2. Compared with Examples 1-3, the tensile strength of Comparative Example 4 decreased. It can be seen that the absence of Ce element in the raw materials will lead to a decrease in the mechanical properties of the material.

[0103] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within the present invention.

Claims

1. A processing technology for a copper profile used in a chip heat sink base, characterized in that: Includes the following steps: Step S1: Melt the raw materials and cast them to obtain an alloy billet; subject the alloy billet to hot rolling, solution treatment, cold rolling, and aging treatment to obtain copper profiles; Step S2: Mix epoxy resin, silicone-modified epoxy resin, modified boron nitride nanosheets, alumina, mica powder, dispersant, defoamer, leveling agent, solvent and curing agent evenly to obtain a composite heat dissipation coating; Step S3: Take a copper profile, grind, clean and dry it, then coat its surface with a composite heat dissipation coating. After curing, a copper profile for chip heat sink base is obtained. The raw material consists of the following components by mass percentage Composition: Ni: 2-4%, Co: 1-2%, Sb: 0.01-0.02%; Cr: 0.03-0.05%, Ce: 0.01-0.05%, balance Cu; The preparation steps of the organosilicon-modified epoxy resin are as follows: Step A: Under nitrogen protection, magnolol, epichlorohydrin and benzyltriethylammonium chloride are mixed evenly and reacted at 80-90℃ for 3-5 hours. The temperature is then lowered to 45-55℃, sodium hydroxide solution is added, and the reaction continues for 2-3 hours. After rotary evaporation, magnolol epoxy resin is obtained. Step B: Mix magnolol epoxy resin, 2-(2-benzimidazolyl)ethanethiol, photoinitiator and tetrahydrofuran evenly, react under ultraviolet light for 1-2 hours, and obtain the intermediate by rotary evaporation; Step C: Mix the intermediate, modified organosilicon and tetrahydrofuran evenly, react at room temperature for 22-24 hours, and then obtain organosilicon-modified epoxy resin by rotary evaporation.

2. The processing technology of a copper profile for a chip heat sink base according to claim 1, characterized in that: The hot rolling temperature is 870℃-920℃, and the hot rolling deformation is 40-60%.

3. The processing technology of a copper profile for a chip heat sink base according to claim 1, characterized in that: The composite heat dissipation coating comprises the following components by weight: 40-50 parts epoxy resin, 10-15 parts silicone-modified epoxy resin, 5-10 parts modified boron nitride nanosheets, 8-12 parts alumina, 10-15 parts mica powder, 1-2 parts dispersant, 0.5-1.0 parts defoamer, 1-3 parts leveling agent, 20-30 parts solvent, and 8-12 parts curing agent.

4. The processing technology of a copper profile for a chip heat sink base according to claim 1, characterized in that: The preparation steps of 2-(2-benzimidazolyl)ethanethiol are as follows: 3-mercaptopropionic acid and 1,2-phenylenediamine are mixed, hydrochloric acid solution is added, and the mixture is refluxed at 100°C for 40 h under an argon atmosphere. After neutralization, filtration, washing, and drying, 2-(2-benzimidazolyl)ethanethiol is obtained.

5. The processing technology of a copper profile for a chip heat sink base according to claim 1, characterized in that: The preparation steps of the modified organosilicon are as follows: Under nitrogen protection, 3-(2,3-epoxypropoxy)propyltrimethoxysilane, furfurylamine, and toluene were mixed evenly and reacted at 60-70℃ for 6-8 h. After vacuum distillation, furan-modified silane was obtained. Furan-modified silane, N-(4-aminophenyl)maleimide, and tetrahydrofuran were mixed evenly and stirred at room temperature for 22-24 h. After filtration, washing, and drying, modified organosilicon was obtained.

6. The processing technology of a copper profile for a chip heat sink base according to claim 3, characterized in that: The preparation steps of the modified boron nitride nanosheets are as follows: Hydroxylated boron nitride nanosheets were ultrasonically dispersed in a mixed solution of anhydrous ethanol and deionized water. Modified organosilicon was added and mixed evenly. The pH was adjusted to 3-4 using hydrochloric acid, and the reaction was carried out at 60-70℃ for 4-6 hours. After centrifugation, washing, and drying, modified boron nitride nanosheets were obtained.

7. The processing technology of a copper profile for a chip heat sink base according to claim 6, characterized in that: The mass ratio of the hydroxylated boron nitride nanosheets to anhydrous ethanol, deionized water, and modified organosilicon is 1:(10-12):(2-4):(0.3-0.5).

8. A copper profile for a chip heat sink base, manufactured using the processing technology described in any one of claims 1-7.

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