Coupler

Abstract

The invention discloses a coupler, and relates to the technical field of electronic circuits. The coupler comprises a first dielectric substrate; a first coupling line and a second coupling line, the first coupling line is arranged on the first side of the first dielectric substrate, a coupling structure of the second coupling line is arranged on the second side of the first dielectric substrate, and the first side and the second side are two opposite sides in the first dielectric substrate; and the second dielectric substrate is arranged between the second side of the first dielectric substrate and the shell. The power transmission efficiency of the coupler is improved.

Description

Technical Field

[0001] The present application relates to the technical field of electronic circuits, and in particular to a coupler. Background Art

[0002] Existing passive network couplers can be used for both blocking and detection, and are widely used in microwave circuits such as splitters, gain control, phase modulators, and power detection. However, existing couplers have difficulty operating at high power levels and suffer from technical issues such as low transmission efficiency. Summary of the Invention

[0003] The embodiments of the present application provide a coupler for solving technical problems such as low functional transmission efficiency in the prior art.

[0004] According to a first aspect of an embodiment of the present application, a coupler is provided, comprising:

[0005] a first dielectric substrate;

[0006] a first coupling line and a second coupling line, wherein the first coupling line is disposed on a first side of the first dielectric substrate, and a coupling structure of the second coupling line is disposed on a second side of the first dielectric substrate, wherein the first side and the second side are two sides of the first dielectric substrate facing away from each other;

[0007] The second dielectric substrate and the housing are arranged between the second side of the first dielectric substrate and the housing.

[0008] In the coupler of this embodiment, the second dielectric substrate is used to adjust the impedance of the coupler so that it reaches a conjugate value with the impedance of the load, thereby improving the matching degree between the entire coupler and the load, reducing signal reflections, and improving the power transmission efficiency of the coupler.

[0009] In some embodiments, the second coupling line further comprises a high resistance device connected to the coupling structure;

[0010] A first end of the high resistance device is grounded, and a second end is connected to the coupling structure.

[0011] In some embodiments, the high-resistance device includes a high-resistance structure and an equivalent inductor;

[0012] The first end of the equivalent inductor is connected to the coupling structure, and the second end is connected to the first end of the high-resistance structure;

[0013] The second end of the high resistance structure is grounded.

[0014] In some embodiments, the high-resistance structure includes a first conductive line, a resistor, and a capacitor;

[0015] One end of the parallel resistor and capacitor is grounded, and the other end is connected to one end of the first wire;

[0016] The other end of the first wire is connected to the second end of the equivalent inductor.

[0017] In some embodiments, the coupling structure and the equivalent inductor are formed by a continuous microstrip line.

[0018] In some embodiments, the first port and the second port are disposed on a first side of the first dielectric substrate, the first port is connected to one end of the first coupling line, and the second port is connected to the other end of the first coupling line.

[0019] In some embodiments, the first connecting via and the second connecting via pass through the first dielectric substrate, the first connecting via is connected to one end of the coupling structure, and the second connecting via is connected to the other end of the coupling structure.

[0020] In some embodiments, the third port and the fourth port are arranged on the first side of the first dielectric substrate, one end of the coupling structure is connected to the third port through the first connecting via and the high-resistance device, and the other end is connected to the fourth port through the second connecting via.

[0021] In some embodiments, the ground structure is disposed on the first dielectric substrate.

[0022] In some embodiments, the second dielectric substrate includes a plurality of dielectric layers, and the plurality of dielectric layers are stacked in a thickness direction and disposed between the second side of the first dielectric substrate and the housing. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0024] Figure 1 One of the structural diagrams of the coupler provided in the embodiment of the present application;

[0025] Figure 2 The second structural diagram of the coupler provided in the embodiment of the present application;

[0026] Figure 3 A schematic diagram of a portion of a coupling line of a coupler provided in an embodiment of the present application;

[0027] Figure 4 An equivalent schematic diagram of a coupler is provided for an embodiment of the present application;

[0028] Figure 5One of the schematic diagrams of the second coupling line provided in an embodiment of the present application;

[0029] Figure 6 A second schematic diagram of a second coupling line provided in an embodiment of the present application;

[0030] Figure 7 A top view of the second side of the first dielectric substrate provided in an embodiment of the present application;

[0031] Figure 8 A top view of the second dielectric substrate provided in an embodiment of the present application;

[0032] Figure 9 A schematic diagram of a first coupling line provided in an embodiment of the present application;

[0033] Figure 10 A schematic diagram of a second dielectric substrate provided in an embodiment of the present application;

[0034] Figure 11 A flow chart of a method for controlling a coupler is provided for an embodiment of the present application;

[0035] Figure 12 A structural block diagram of a control device for a coupler provided in an embodiment of the present application;

[0036] in, Figure 1 and Figure 2 The corresponding relationship between the reference numerals and component names is as follows:

[0037] 100 coupler, 101 first dielectric substrate, 102 first coupling line, 103 second coupling line, 104 second dielectric substrate, 105 housing, 106 high-resistance device, 107 coupling structure, 108 high-resistance structure, 109 equivalent inductor, 110 first wire, 111 resistor, 112 capacitor, 113 grounding structure, 114 first connecting via, 115 second connecting via, 116 first port, 117 second port, 118 third port, 119 fourth port, 120 dielectric layer. DETAILED DESCRIPTION

[0038] In order to better understand the technical solutions provided by the embodiments of this specification, the technical solutions of the embodiments of this specification are described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.

[0039] In this article, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also include elements inherent to such process, method, article or equipment. In the absence of further restrictions, the elements defined by the statement "comprising a ..." do not exclude the presence of other identical elements in the process, method, article or equipment comprising the elements. The term "two or more" includes two or more than two cases.

[0040] In some embodiments, Figure 1 This is one of the structural diagrams of the coupler provided in the embodiment of the present application. Figure 2 The second structural diagram of the coupler provided in the embodiment of the present application is as follows: Figure 1 and Figure 2 As shown, an embodiment of the present application provides a coupler 100, comprising:

[0041] A first dielectric substrate 101;

[0042] A first coupling line 102 and a second coupling line 103, wherein the first coupling line 102 is disposed on a first side of the first dielectric substrate 101, and a coupling structure 107 of the second coupling line 103 is disposed on a second side of the first dielectric substrate 101, wherein the first side and the second side are two sides of the first dielectric substrate 101 that are opposite to each other;

[0043] The second dielectric substrate 104 and the housing 105 are disposed between the second side of the first dielectric substrate 101 and the housing 105 .

[0044] In this embodiment, reference Figure 1 and Figure 2 The coupler 100 includes a first dielectric substrate 101, a first coupling line 102, and a second coupling line 103, wherein the first dielectric substrate 101 can be a substrate material of the coupler 100, the first coupling line 102 can be a coupling main line of the coupler 100, and the coupling structure 107 of the second coupling line 103 can be a coupling sub-line of the coupler 100.

[0045] It should be noted that the first coupling line 102 is provided on the first side of the first dielectric substrate 101, and the coupling structure 107 of the second coupling line 103 is provided on the second side of the first dielectric substrate 101. The first side and the second side are two sides of the first dielectric substrate 101 that are opposite to each other. The first coupling line 102 and the second coupling line 103 can perform signal coupling on both sides of the first dielectric substrate 101.

[0046] For example, the first dielectric substrate 101 may be made of a substrate material with a low dielectric constant to reduce dielectric loss and improve signal transmission efficiency.

[0047] Exemplarily, when a first signal is input to the first coupling line 102 and a second signal is input to the second coupling line 103, the first signal and the second signal are coupled through the first coupling line 102 and the second coupling line 103 to obtain a third signal, wherein the energy of the third signal is equal to the sum of the energies of the first signal and the second signal.

[0048] Exemplarily, the first side may be the front side of the first dielectric substrate 101 , and the second side may be the back side of the first dielectric substrate 101 .

[0049] For example, Figure 3 This is a schematic diagram of a portion of the coupling line of the coupler provided in an embodiment of the present application. The first coupling line 102 and the second coupling line 103 can both be serpentine-shaped, that is, they are composed of multiple U-shaped segments connected to each other, the inner side P of the bottom corner of each U-shaped segment is a right angle, and the outer side Q of the corner is chamfered, that is, the bottom corner of the U-shaped segment is not a curved corner. Figure 3 The signal coupling equivalent model of the U-shaped segment is shown. Figure 3 The left figure shows that when the corner is an arc corner, the arc-shaped transmission line is prone to signal positive feedback due to spatial coupling in its corner area. Figure 3 The left figure shows that when the corner is a chamfered corner, the first coupling line 102 and the second coupling line 103 using the chamfered corner treatment will have a certain symmetrical cancellation effect. Specifically, the coupling structure at the chamfered corner is symmetrical about the center of the chamfer, and the signal fields at both ends of the chamfer cancel each other, reducing the possibility of forming a positive feedback signal.

[0050] For example, by arranging the first coupling line 102 and the second coupling line 103 on the upper and lower sides of the first dielectric substrate 101, respectively, rather than arranging the first coupling line 102 and the second coupling line 103 on the same side of the first dielectric substrate 101, the occupied area of ​​the first coupling line 102 and the second coupling line 103 on the first substrate is reduced, and the overall physical size of the coupler 100 is reduced, making it suitable for integration into a power amplifier system.

[0051] The coupler 100 further includes a second dielectric substrate 104 and a housing 105 . The second dielectric substrate 104 is disposed between the second side of the first dielectric substrate 101 and the housing 105 . The second dielectric substrate 104 is a component for adjusting the impedance value of the coupler 100 , and the housing 105 is an external protective shell of the coupler 100 .

[0052] Illustratively, the second dielectric substrate 104 may be formed by stacking multiple dielectric layers, and is used to form a capacitor between the first dielectric substrate 101 and the housing 105 to adjust the impedance of the coupler 100 and meet the load impedance requirements of the coupler 100. It is readily understood that the capacitor formed between the first dielectric substrate 101 and the housing 105 may refer to the capacitor formed between the coupling line on the first dielectric substrate 101 (and the grounding structure described below), the second dielectric substrate 104, and the housing 105.

[0053] Exemplarily, the first dielectric substrate 101 , the second dielectric substrate 104 and the housing 105 may be fixed by screws.

[0054] In the coupler 100 of this embodiment, the second dielectric substrate 104 is used to adjust the impedance of the coupler 100 so that the impedance thereof reaches a conjugate value with the impedance of the load, thereby improving the matching degree between the coupler 100 as a whole and the load, reducing signal reflections, and improving the power transmission efficiency of the coupler 100.

[0055] Furthermore, by simply adjusting any of the parameters such as the dielectric constant and thickness of the second dielectric substrate 104 and the number of dielectric layers in the second dielectric substrate 104, the capacitance between the first dielectric substrate 101 and the housing 105 is changed, thereby changing the phase of the signal in the coupler 100. This reduces signal reflection caused by the phase change, thereby improving the flatness and directivity of the signal in the coupler 100.

[0056] In some embodiments, an embodiment of the present application provides a coupler 100 , wherein the second coupling line 103 further includes a high-resistance device 106 connected to the coupling structure 107 ;

[0057] A first terminal of the high resistance device 106 is grounded, and a second terminal is connected to the coupling structure 107 .

[0058] In this embodiment, the coupling structure 107 is a microwave transmission line, which is a coupling region in the second coupling line 103 , and the high-resistance device 106 is a high-resistance device inside the second coupling line 103 .

[0059] Exemplarily, the coupling structure 107 is a structure for signal coupling between the second coupling line 103 and the first coupling line 102. Exemplarily, the coupling structure 107 is located on the back surface of the first dielectric substrate 101 and is identical to the first coupling line 102 (e.g., shape and size). Furthermore, exemplary, the coupling structure 107 is located on the back surface of the first dielectric substrate 101 and is identical in structure to and parallel to the first coupling line 102 (i.e., completely overlaps vertically).

[0060] Exemplarily, the high-resistance device 106 can be a high-resistance region in the second coupling line 103. The high-resistance state of the high-resistance region is a relative state, which means that the impedance of the high-resistance region is relatively large compared with the impedance state of the coupled signal in the coupling structure 107 (the parallel part of the first coupling line 102 and the second coupling line 103).

[0061] For example, the first dielectric substrate 101 may be made based on a Rogers RT / duroid 6002 substrate and may have a thickness of 0.78 mm.

[0062] For example, the insertion loss of the coupler 100 is less than 0.2 dB. The first dielectric substrate 101 and the second dielectric substrate 104 may be made of Rogers plates, and the first coupling line 102 and the second coupling line 103 may be made of copper.

[0063] For example, traditional couplers have problems such as poor directivity, large insertion loss, and weak resistance to high-power crosstalk. Specifically, poor directivity: traditional parallel microstrip couplers have poor directivity due to the imbalance of phase velocity of odd and even modes, which is more obvious under high power. Large insertion loss: Although traditional couplers using cross-finger capacitive coupling technology can improve isolation, this will increase the power loss of the main line and is not suitable for high-power detection. Weak resistance to high-power crosstalk: As the power increases, the in-band fluctuation of traditional couplers increases, and they are easily affected by power crosstalk, resulting in measurement errors. In order to overcome the above-mentioned technical problems of traditional parallel microstrip couplers, the coupler 100 of this embodiment introduces a high-resistance device 106 in the second coupling line 103, so that the phase velocity of the odd and even modes of the coupler is balanced, thereby improving the directivity and in-band flatness of the coupler and reducing the power loss on the coupled main line.

[0064] In some embodiments, an embodiment of the present application provides a coupler 100 , wherein the high-resistance device 106 includes a high-resistance structure 108 and an equivalent inductor 109 ;

[0065] A first end of the equivalent inductor 109 is connected to the coupling structure 107 , and a second end is connected to a first end of the high-resistance structure 108 ;

[0066] A second terminal of the high resistance structure 108 is grounded.

[0067] In this embodiment, reference Figure 2 The high-resistance device 106 includes a high-resistance structure 108 and an equivalent inductor 109 , wherein the equivalent inductor 109 is an inductor device in the high-resistance device 106 , and the high-resistance structure 108 is a high-resistance structure inside the high-resistance device 106 .

[0068] Exemplarily, the high-resistance structure 108 may be a high-resistance structure located on the first side of the first dielectric substrate 101 .

[0069] It should be noted that the high-resistance structure 108 inside the high-resistance device 106 can reduce the signal leakage on the second coupling line 103, so the power of the signal coupled to the first coupling line 102 will become larger, thereby increasing the coupling strength between the first coupling line 102 and the second coupling line 103, and reducing the power loss of the signal on the first coupling line 102.

[0070] A first end of the equivalent inductor 109 is connected to the coupling structure 107 , and a second end thereof is connected to a first end of the high-resistance structure 108 . A second end of the high-resistance structure 108 is grounded.

[0071] Exemplarily, the equivalent inductor 109 may be made of a microstrip line.

[0072] Generally speaking, inductors are typically composed of a spirally wound wire. With advances in technology, inductors can now be equivalently manufactured using microstrip lines. Series inductors and shunt capacitors can be replaced with high-impedance microstrip lines and low-impedance microstrip lines. For example, by adding an equivalent inductor 109 formed by a microstrip line at the isolation end of coupler 100, inductance compensation is performed on the signal within second coupled line 103 to adjust the signal's phase velocity and directionality. This balances the odd- and even-mode phase velocities of coupler 100 and improves its directionality.

[0073] For example, through high-resistance region design and inductance compensation technology, the power of the signal coupled to the first coupling line 102 is increased, and the diffusion or leakage of power to other regions is correspondingly reduced, thereby reducing power loss and thus reducing the insertion loss of the coupler 100.

[0074] In the coupler 100 of this embodiment, the high-resistance structure 108 and the equivalent inductor 109 in the high-resistance device 106 reduce signal leakage on the second coupling line 103. As a result, the power of the signal coupled to the first coupling line 102 increases. Therefore, the high-resistance structure 108 and the equivalent inductor 109 in the high-resistance device 106 reduce the power loss of the signal on the first coupling line 102.

[0075] In some embodiments, an embodiment of the present application provides a coupler 100 , wherein the high-resistance structure 108 includes a first conductive line 110 , a resistor 111 , and a capacitor 112 ;

[0076] One end of the resistor 111 and the capacitor 112 connected in parallel is grounded, and the other end is connected to one end of the first wire 110;

[0077] The other end of the first conductive line 110 is connected to the second end of the equivalent inductor 109 .

[0078] In this embodiment, the high resistance structure 108 includes a first conductive line 110 , a resistor 111 , and a capacitor 112 .

[0079] Exemplarily, the resistor 111 may be a chip resistor.

[0080] By way of example, the capacitor 112 may be a chip capacitor.

[0081] For example, the first conductive line 110 may be a conductive line made of a microstrip line. For example, the coupling structure 107 , the equivalent inductor 109 and the first conductive line 110 may be made of a continuous microstrip line.

[0082] For example, by adding the resistor 111 and the capacitor 112 in parallel in the high-resistance structure 108 , the signal leakage on the second coupling line 103 is reduced, so the power of the signal coupled to the first coupling line 102 is increased.

[0083] Illustratively, the parallel resistor 111 and capacitor 112 reduce signal leakage on the coupling sub-line, increase the coupling strength between the first coupling line 102 and the second coupling line 103 , and reduce power loss of the signal on the first coupling line 102 .

[0084] In some embodiments, an embodiment of the present application provides a coupler 100 , wherein the coupling structure 108 and the equivalent inductor 109 are formed by a continuous microstrip line.

[0085] In some embodiments, an embodiment of the present application provides a coupler 100, and the coupler 100 further includes:

[0086] The first port 116 and the second port 117 are disposed on the first side of the first dielectric substrate 101 . The first port 116 is connected to one end of the first coupling line 102 , and the second port 117 is connected to the other end of the first coupling line 102 .

[0087] In this embodiment, the first port 116 and the second port 117 are information transmission ports of the first coupling line 102 .

[0088] For example, the first port 116 may be a signal input terminal of the first coupling line 102 , and the second port 117 may be a signal output terminal.

[0089] In some embodiments, an embodiment of the present application provides a coupler 100, and the coupler 100 further includes:

[0090] The first connecting via 114 and the second connecting via 115 extend through the first dielectric substrate. The first connecting via 114 is connected to one end of the coupling structure 107, and the second connecting via 115 is connected to the other end of the coupling structure 107. In this embodiment, the first connecting via 114 and the second connecting via 115 are connecting vias on the first dielectric substrate 101.

[0091] For example, the first connecting via 114 and the second connecting via 115 respectively penetrate the first dielectric substrate 101, and the first connecting via 114 is laterally located on one side of the first dielectric substrate 101 (eg Figure 2 The second connecting via 115 is laterally located on the other side of the first dielectric substrate 101 (eg Figure 2 (center right side), wherein first connecting via 114 is connected to one end of second coupling line 103, and second connecting via 115 is connected to the other end of second coupling line 103. In an embodiment in which second coupling line 103 includes coupling structure 107 and high-resistance device 106, first connecting via 114 connects one end of coupling structure 107 to high-resistance device 106 (specifically, to equivalent inductor 109), and second connecting via 115 is connected to the other end of coupling structure 107.

[0092] In some embodiments, an embodiment of the present application provides a coupler 100, which further includes:

[0093] The third port 118 and the fourth port 119 are arranged on the first side of the first dielectric substrate 101. One end of the coupling structure 107 is connected to the third port 118 through the first connecting via 114 and the high-resistance device 106, and the other end is connected to the fourth port 119 through the second connecting via 115.

[0094] In this embodiment, the fourth port 119 is an information transmission port of the second coupling line 103 , and the third port 118 is a signal isolation port of the coupler.

[0095] Exemplarily, the third port 118 and the fourth port 119 are provided on the first side of the first dielectric substrate 101 , the third port 118 is connected to one end of the coupling structure 107 through the first connecting via 114 , and the fourth port 119 is connected to the other end of the coupling structure 107 through the second connecting via 115 .

[0096] Exemplarily, the third port 118 may be a signal isolation terminal of the second coupling line 103 , and the fourth port 119 may be a signal input terminal of the second coupling line 103 .

[0097] Exemplarily, the second coupling line 103 (including the equivalent inductor 109 ) and the first connecting via 114 and the second connecting via 115 are all formed by a continuous integral microstrip line, which significantly improves the stability of the coupler 100 in a high-power state compared to adding a separate inductor at the isolated end of the second coupling line 103 .

[0098] Exemplarily, the first coupling line 102 can be a coupling main line, and the second coupling line 103 can be a coupling sub-line. In an embodiment where the second coupling line 103 further includes a high-resistance device 106, the coupling structure 107 can serve as a coupling sub-line. The signal coupling process of the coupler 100 is as follows: the two signals to be coupled enter the coupling main line and the coupling sub-line respectively, wherein the two signals are a first signal and a second signal. The first signal enters the coupling main line from the first port 116, and the second signal reaches the coupling sub-line through the fourth port 119 and the second connecting via 115. After the second signal reaches the coupling sub-line, it is coupled with the first signal of the coupling main line above. The second signal coupled to the coupling main line is combined with the first signal in the coupling main line to obtain a signal with greater energy, which is output from the second port 117 of the coupling main line. At the same time, due to the presence of the high-resistance device 106, the third port 118 of the coupling sub-line can prevent the signal from being output from the isolation end.

[0099] In some embodiments, an embodiment of the present application provides a coupler 100, and the coupler 100 further includes:

[0100] The grounding structure 113 is disposed on the first dielectric substrate 101 .

[0101] In this embodiment, grounding structure 113 is disposed on the first side of first dielectric substrate 101 and is a component structure used for grounding in coupler 100. Grounding structure 113 preferably surrounds first coupling line 102 and high-resistance device 106 to absorb field effects. In a further embodiment, grounding structure 113 includes a first portion disposed on the first side of first dielectric substrate 101 and a second portion disposed on the second side of first dielectric substrate 101. The first portion preferably surrounds first coupling line 102 and high-resistance device 106, while the second portion preferably surrounds coupling structure 107 to absorb field effects.

[0102] Exemplarily, the ground structure 113 may be specifically a ground plane, ie, an exposed ground surface.

[0103] Exemplarily, the grounding structure 113 is a metal layer, such as a copper layer, located on the first dielectric substrate 101 .

[0104] In some embodiments, a coupler 100 is provided in an embodiment of the present application. The second dielectric substrate 104 includes a plurality of dielectric layers 120 . The plurality of dielectric layers 120 are stacked in the thickness direction and disposed between the second side of the first dielectric substrate 101 and the housing 105 .

[0105] In this embodiment, the second dielectric substrate 104 includes a plurality of dielectric layers 120 , wherein the dielectric layer 120 is a substrate having electrical properties. The plurality of dielectric layers 120 are stacked in the thickness direction and disposed between the second side of the first dielectric substrate 101 and the housing 105 .

[0106] Exemplarily, the plurality of dielectric layers 120 are stacked and disposed between the second side of the first dielectric substrate 101 and the housing 105 by screws.

[0107] For example, the thickness and dielectric constant of the dielectric layer 120 may be adjusted.

[0108] For example, Figure 4 The equivalent schematic diagram of the coupler 100 is provided for the embodiment of the present application. The prototype circuit of the coupler 100 and the equivalent model of the coupling structure are shown in FIG. Figure 4 As shown, equivalent capacitors C3 and C4 exist between the coupling main line and the ground line, and the coupling main line also includes an inductor L2 made of a microstrip line. Equivalent capacitors C1 and C2 exist between the coupling secondary line and the ground line, and the coupling secondary line and the coupling main line can be equivalent to inductors L1 and L2, respectively. Equivalent capacitors C6 and C7 exist between the coupling main line and the coupling secondary line. In addition, the coupling secondary line also includes a high-resistance region, and this high-resistance region includes a parallel capacitor C5 and resistor R1, which are respectively the capacitor 112 and resistor 111 described above.

[0109] For example, Figure 5 This is one of the schematic diagrams of the second coupling line 103 provided in the embodiment of the present application. The structure of the second coupling line 103 is as follows: Figure 5 As shown, the second coupling line 103 is composed of a U-shaped microstrip line.

[0110] For example, Figure 6 This is a second schematic diagram of the second coupling line 103 provided in an embodiment of the present application. The second coupling line 103 includes a high resistance device 106. The equivalent inductance of the second coupling line 103 is transformed as follows: Figure 6 As shown, Figure 6 1 and 2 show the coupling structure 107 and the equivalent inductance 109 of the second coupling line 103 .

[0111] For example, Figure 7This is a top view of the second side of the first dielectric substrate 101 provided with a coupling structure 107 according to an embodiment of the present application. Figure 7 1. A second portion of the ground structure 113 is shown in FIG. 1, which surrounds the coupling structure 107 to absorb the influence of the field.

[0112] For example, Figure 8 The top view of the second dielectric substrate 104 provided in the embodiment of the present application is shown in FIG. Figure 8 As shown. Figure 8 As shown, the second dielectric substrate 104 may be rectangular, with notches formed at the four corners of the rectangle. However, the present application is not limited thereto, and the second dielectric substrate 104 may also have other suitable shapes.

[0113] For example, Figure 9 This is a schematic diagram of the first coupling line 102 provided in an embodiment of the present application. Figure 9 The segment a in the figure represents the width of the first coupling line 102. The segments b, c, d, e, and f of the first coupling line 102 are connected to each other. In the embodiment where the first coupling line 102 is composed of a plurality of U-shaped segments, the segment b is connected to the first port 116, the segment e is connected to the segment b, the two segments e and the segment c form a U shape, the segment d is connected between the U-shaped segments, and the segment f connects the end U-shaped segment to the second port 117. The length of the segment a can be 2.88 mm, the length of the segment b can be 9.83 mm, the length of the segment c can be 4.90 mm, the length of the segment d can be 10.37 mm, the length of the segment e can be 4.90 mm, and the length of the segment f can be 9.16 mm.

[0114] For example, Figure 10 This is a schematic diagram of the second dielectric substrate 104 provided in an embodiment of the present application. Figure 10 In the figure, the second dielectric substrate 104 is described as a rectangle with notches formed at four corners. T represents the thickness of the dielectric layer of the second dielectric substrate 104. Figure 10 In the figure, segment g represents the width of the rectangular second dielectric substrate 104, segment h represents the width of the second dielectric substrate 104 minus the width of two notches, and twice segment j plus segment k represents the length of the rectangular second dielectric substrate 104. Segment j represents the length of the notches, and the four notches can be the same. In some embodiments, each dielectric layer in the second dielectric substrate 104 can be 1.50 mm thick. The length of segment g of the second dielectric substrate 104 can be specifically 16.73 mm, the length of segment h can be specifically 6.25 mm, the length of segment j can be specifically 7.00 mm, and the length of segment k can be specifically 52.25 mm.

[0115] In some embodiments, as Figure 11As shown, an embodiment of the present application provides a method for controlling a coupler, including:

[0116] Step S401 : obtaining a first circuit impedance of a first circuit and a second circuit impedance of a second circuit.

[0117] In this embodiment, a control method for a coupler is proposed. The coupler is the coupler in any of the above embodiments. The coupler is arranged between a first circuit and a second circuit, wherein the first circuit and the second circuit are independent circuits that need to couple signals.

[0118] A first circuit impedance of the first circuit and a second circuit impedance of the second circuit are obtained, wherein the first circuit impedance is the circuit impedance of the first circuit and the second circuit impedance is the circuit impedance of the second circuit.

[0119] For example, the first circuit may input a signal to the first coupling line, and the second circuit may input a signal to the second coupling line.

[0120] Step S402: determining a target impedance range according to the first circuit impedance and the second circuit impedance.

[0121] Data processing is performed on the first circuit impedance and the second circuit impedance to obtain a target impedance range, wherein the target impedance range is an impedance range of the coupler.

[0122] Step S403 : adjusting the capacitance between the first dielectric substrate and the housing by adjusting relevant parameters of the second dielectric substrate, so that the impedance value of the coupler falls within a target impedance range.

[0123] The capacitance between the first dielectric substrate and the housing is adjusted by adjusting relevant parameters of the second dielectric substrate, so that the impedance value of the coupler falls within the target impedance range, wherein the relevant parameters are relevant parameters of the second dielectric substrate.

[0124] For example, when the first circuit impedance is 50 ohms and the second circuit impedance is 40 ohms, the target impedance range may be determined to be 40 ohms to 50 ohms.

[0125] For example, the relevant parameters may include the thickness, dielectric constant, and number of dielectric layers of the second dielectric substrate.

[0126] It should be noted that by adding an equivalent inductor to the isolation end of the coupler and adjusting the inductance value, the phase velocities of the odd and even modes at the center frequency are made equal, thereby achieving higher isolation.

[0127] By adding an equivalent inductor to the isolation port of the coupler (i.e., the third port in the coupler) for inductance compensation, the phase velocity difference between the odd and even modes of the signal is balanced, reducing the delay caused by phase inconsistency. Therefore, a shorter electrical length can be achieved at the same physical length. Inductance compensation reduces the electrical length of the coupler. At the same time, by improving phase velocity matching and electromagnetic field distribution, inductance compensation allows the main line and the auxiliary line to achieve efficient coupling at a smaller spacing, thereby optimizing the spacing between the main line and the auxiliary line, reducing insertion loss, and improving the performance of resisting high-power crosstalk.

[0128] The coupler control method of this embodiment adjusts the impedance of the coupler through the second dielectric substrate so that the impedance of the coupler falls within a target impedance range, thereby achieving a conjugate value with the impedance of the load. This improves the matching between the entire coupler and the load, reduces signal reflections, and improves the power transmission efficiency of the coupler.

[0129] Illustratively, the coupler 100 of the embodiment of the present application can achieve a coupling degree between 9-11dB, an insertion loss of less than 0.2dB, an in-band ripple of less than 0.8dB, a directivity greater than 12dB, and a power capacity of 1500W-2000W in the frequency range between 5MHz-610MHz.

[0130] In some embodiments, as Figure 12 As shown, a coupler control device 1300 is provided. Coupler control device 1300 includes a processor 1302 and a memory 1304. Memory 1304 stores a computer program. When executed by processor 1302, the computer program implements the steps of the coupler control method described in any of the above-mentioned embodiments. Therefore, coupler control device 1300 has all the advantages of the coupler control method described in any of the above-mentioned embodiments, and no further details are given here.

[0131] In one embodiment of the present application, an electronic device is proposed, comprising: a control device for a coupler as in any of the above embodiments, and / or a readable storage medium as in any of the above embodiments, and thus having all the beneficial technical effects of the control device for the coupler as in any of the above embodiments, and / or the readable storage medium as in any of the above embodiments, which will not be elaborated upon here.

[0132] Exemplarily, the electronic device may be a radio frequency power amplifier.

[0133] It should be noted that, in the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant description of other embodiments.

[0134] Those skilled in the art will appreciate that the embodiments of the present application can be provided as methods, systems, or computer program products. Therefore, the present application can adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-readable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) that contain computer-readable program code.

[0135] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0136] In the several embodiments provided in this application, it should be understood that the disclosed devices, apparatuses and methods can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interface, device or unit, which can be electrical, mechanical or other forms.

[0137] Units described as separate components may or may not be physically separate, and components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0138] In addition, the functional units in the various embodiments of the present application may be integrated into a single processing unit, or each unit may exist physically separately, or two or more units may be integrated into a single unit. The aforementioned integrated units may be implemented in the form of hardware or software functional units.

[0139] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including a number of instructions for enabling a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the various embodiments of the present application. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0140] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

[0141] Although the preferred embodiments of this specification have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of this specification.

[0142] Obviously, those skilled in the art may make various changes and modifications to this specification without departing from the spirit and scope of this specification. Thus, if such changes and modifications fall within the scope of the claims of this specification and their equivalents, this specification is intended to include such changes and modifications.

Claims

1. A coupler, characterized in that: include: a first dielectric substrate; a first coupling line and a second coupling line, wherein the first coupling line is provided on a first side of the first dielectric substrate, and a coupling structure of the second coupling line is provided on a second side of the first dielectric substrate, wherein the first side and the second side are two sides of the first dielectric substrate that are opposite to each other; A second dielectric substrate and a housing, wherein the second dielectric substrate is disposed between the second side of the first dielectric substrate and the housing.

2. The coupler according to claim 1, wherein: The second coupling line further includes a high resistance device connected to the coupling structure; A first end of the high resistance device is grounded, and a second end is connected to the coupling structure.

3. The coupler according to claim 2, wherein: The high-resistance device includes a high-resistance structure and an equivalent inductor; The first end of the equivalent inductor is connected to the coupling structure, and the second end is connected to the first end of the high-resistance structure; The second end of the high resistance structure is grounded.

4. The coupler according to claim 3, wherein: The high-resistance structure includes a first wire, a resistor and a capacitor; One end of the resistor and the capacitor connected in parallel is grounded, and the other end is connected to one end of the first wire; The other end of the first wire is connected to the second end of the equivalent inductor.

5. The coupler according to claim 3, wherein: The coupling structure and the equivalent inductor are formed by a continuous microstrip line.

6. The coupler according to claim 2, wherein: The coupler further comprises: A first port and a second port are provided on the first side of the first dielectric substrate, the first port is connected to one end of the first coupling line, and the second port is connected to the other end of the first coupling line.

7. The coupler according to claim 2, wherein: The coupler further comprises: A first connecting via and a second connecting via pass through the first dielectric substrate. The first connecting via is connected to one end of the coupling structure, and the second connecting via is connected to the other end of the coupling structure.

8. The coupler according to claim 7, wherein: The coupler further comprises: a third port and a fourth port, wherein the third port and the fourth port are arranged on the first side of the first dielectric substrate, one end of the coupling structure is connected to the third port through the first connecting via and the high-resistance device, and the other end is connected to the fourth port through the second connecting via.

9. The coupler according to any one of claims 1 to 8, characterized in that The coupler further comprises: A grounding structure is provided on the first dielectric substrate.

10. The coupler according to any one of claims 1 to 8, characterized in that The second dielectric substrate includes a plurality of dielectric layers, and the plurality of dielectric layers are stacked in a thickness direction and disposed between the second side of the first dielectric substrate and the housing.

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