A crystal cutting method for fast orientation and slicing

Abstract

The application discloses a crystal cutting method for rapid orientation and slicing, and comprises the following steps: cutting preparation, crystal upper disc, winding around a diamond wire, process setting of single-wire cutting and multi-wire cutting, and crystal orientation; wherein the cutting parameters of the single-wire cutting and the multi-wire cutting need to be set according to the size of the crystal blank diameter, and the winding of the multi-wire needs to be carried out according to the product size. The application can realize position adjustment during the crystal orientation processing, does not need to take down the crystal, improves the cutting efficiency, can reduce the change amount of the crystal slice morphology cut out, and makes the bending degree, warping degree and total thickness deviation of the product surface after cutting smaller, and improves the quality of the cut-out slice.

Description

Technical Field

[0001] This invention relates to the field of artificial crystal growth equipment, and more specifically to a method for rapid orientation and slicing of crystals. Background Technology

[0002] Crystalline materials are widely used and come in various forms, generally in the form of discs, cubes, and cylinders of different sizes. Due to their anisotropic properties, crystal blanks must be oriented before processing, followed by different processing steps to complete the crystal fabrication. Wafer thin films, as one type of crystal, are more difficult to process, generally employing an orientation-segmentation-slicing-grinding and polishing process. Orientation methods include single-wire cutting and internal circle cutting; after orientation, segmentation is performed using methods such as multi-wire cutting, internal circle cutting, and single-wire cutting; and after segmentation, slicing is typically done using multi-wire cutting.

[0003] Traditional methods involve orientation, slicing, and dicing, which are different processes requiring different equipment. Repeated loading and unloading of the crystal is not only time-consuming and labor-intensive with long cycles, but also seriously affects accuracy and yield, which is a bottleneck in crystal processing technology. Summary of the Invention

[0004] To address the above problems, this invention adopts a one-step approach, using the same equipment to cut the crystal from its blank state into the required wafer slices in a single process, and then grinds and polishes them into the desired product.

[0005] This invention provides a method for rapid orientation and slicing of crystals, comprising the following steps:

[0006] Step S1: Detect the diameter and length of the crystal blank to be cut.

[0007] Step S2: Fix the crystal blank to be cut on the cutting device; the cutting device includes a cutting table, an adjustment component, a base, and a cutting component; the cutting component includes a first roller, a second roller, and diamond wire wound around its surface, wherein the first roller and the second roller are arranged in parallel above the cutting device.

[0008] Step S3: Wrap diamond wire around the cutting component and set the cutting parameters, including single-wire cutting parameters and multi-wire cutting parameters.

[0009] Step S4: After setting the cutting parameters, the part of the crystal blank to be cut is moved to the bottom of the cutting component through the adjustment component. The crystal axis of the crystal blank is adjusted to be perpendicular to the cutting surface, and a single-line cutting method is used to cut the oriented sheet.

[0010] Step S5: After single-line cutting is completed, orientation is performed to orient the crystal to the required angle range. In some preferred embodiments, the orientation specifically refers to drawing a crosshair perpendicular to the cut crystal slice according to the line marks, measuring the crystal orientation angle of the perpendicular line, and calculating the deviation value; adjusting the position of the cutting stage according to the deviation value so that the crystal axis of the crystal on the cutting stage is perpendicular to the cutting surface.

[0011] Step S6: After orientation is completed, multi-wire cutting is performed. Multi-wire winding is performed according to the product thickness. The crystal position remains unchanged. The adjustment component is adjusted to move the part to be cut to the bottom of the cutting component for cutting.

[0012] Furthermore, the diamond wire winding method includes single-wire, multi-wire, or combined winding methods, wherein combined winding refers to the simultaneous use of single-wire and multi-wire methods. More specifically, when using the combined winding method, a certain space is left before and after the single wire to prevent the diamond wire from being wrapped around it, so that only one diamond wire is used for crystal cutting during the cutting process.

[0013] Furthermore, in step S3, the single-wire cutting parameters are set as follows: the tension is adjusted to 60% to 80% of the breaking tension of the wire diameter, with a setting range of 20 to 40 N; the cutting speed is 800 to 1500 m / min; the oscillation angle is 5 to 15°, and the number of oscillations is 20 to 30 times / min; the cutting feed speed is set using a multi-segment cutting method, with 5 to 10 segments set according to the height of the crystal blank to be cut, and the corresponding feed speed is set separately at 0.1 to 0.5 mm / min; the wire loss range is 5 to 30 m / min.

[0014] Furthermore, the multi-wire cutting parameters in step S3 or S6 are set as follows: the tension is adjusted to 60% to 80% of the breaking tension of the wire diameter, with a setting range of 20 to 40 N; the cutting speed is 800 to 1500 m / min; the oscillation angle is 5 to 15°, and the number of oscillations is 20 to 30 times / min; the cutting feed speed is set using a multi-segment cutting method, with 5 to 10 segments set according to the height of the crystal to be cut, and the corresponding feed speed is set separately at 0.1 to 0.5 mm / min; the wire loss range is 20 to 30 m / min.

[0015] In some preferred embodiments, the cutting table is provided with a U-shaped groove, the height of which is lower than the radius of the crystal blank, and the material of the U-shaped groove is preferably graphite carbon material.

[0016] Furthermore, the diamond wire is electroplated diamond wire with a diameter of 0.1-0.2mm.

[0017] In some preferred embodiments, the adjustment assembly includes an angle adjustment component, a crystal axial rotation component, and a displacement adjustment component; the crystal axial rotation component is fixed below the cutting stage and includes a rotation mechanism capable of rotating horizontally around the vertical direction, driving the cutting stage to rotate horizontally; the angle adjustment component is placed below the crystal axial rotation component and can adjust the tilt angle of the cutting stage; the displacement adjustment component is placed on the base for controlling the forward and backward translation of the cutting stage, and the displacement adjustment component is fixedly connected to the angle adjustment component.

[0018] The beneficial effects of the present invention are as follows: The present invention can realize the position adjustment during crystal orientation processing without removing the crystal, thereby improving the cutting efficiency. At the same time, it can reduce the amount of change in the morphology of the cut crystal slices, so that the curvature, warp and total thickness deviation of the product surface obtained after cutting are smaller, thus improving the quality of the cut slices.

[0019] 1. The cutting device of this invention is a customized multi-axis cutting equipment that can perform various winding methods, including single-wire winding, multi-wire winding, and combined winding, for crystal blanking, slicing, and block cutting; by innovating different winding methods, it can realize single-wire cutting and multi-wire slicing on the same machine and on the same platform without dropping the plate, and can simultaneously cut crystals of different sizes and thicknesses; at the same time, the cutting device has a certain angle swing function, and the cutting force is strong.

[0020] 2. The adjustment components of the cutting device can achieve three-dimensional spatial adjustment. The XY axis can be adjusted to orient to the required angle range, and the Z axis can be adjusted to achieve multiple continuous and rapid cuts without lowering the plate. The orientation angle accuracy is high, and can be lower than 5′ horizontally.

[0021] 3. Innovate the cutting process, optimize the cutting tension, feed speed, cutting line speed, wire supply speed, and cutting swing angle to achieve excellent results in single-wire and multi-wire crystal cutting with no wire breakage, less wire loss, fewer cutting marks, better surface roughness, and less wafer warping.

[0022] 4. The crystal blank is fixed and bonded to the cutting table using special tooling, which is firm and does not damage the crystal surface, does not generate large stress, does not crack, does not fall off the plate after multiple cuts, and can be quickly loaded and unloaded. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the operation flow of one embodiment of the present invention;

[0024] Figure 2 This is a schematic diagram of the overall structure of the cutting device;

[0025] Figure 3 This is a schematic diagram of one of the winding methods of the roller in the cutting assembly;

[0026] Figure 4 yes Figure 3Side view;

[0027] Figure 5 This is a schematic diagram of the adjustment components in one embodiment. From top to bottom, they are a crystal axial rotation component, an angular adjustment component, and a displacement adjustment component.

[0028] Labeling description: 100, Cutting device; 1, Cutting table; 2, Adjustment component; 21, Angle adjustment component; 22, Crystal axis rotation component; 23, Displacement adjustment component; 3, Base; 4, Crystal; 5, Cutting component; 51, First roller; 52, Second roller; 53, Diamond wire. Detailed Implementation

[0029] To better understand the technical solution of the present invention, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] It should be understood that the described embodiments are merely some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0031] This invention provides a rapid orientation and slicing method for crystal cutting, including the following steps: cutting preparation, crystal mounting, winding with single and / or multiple wires, cutting process settings, single-wire cutting, crystal orientation, and multi-wire cutting. Both single-wire cutting and multi-wire cutting require setting cutting parameters according to the diameter of the crystal blank, and multi-wire winding requires winding according to the product size.

[0032] Figure 2 The schematic diagram of the cutting device 100 used in this invention shows that it includes a cutting table 1 for supporting the crystal 4 to be cut, an adjustment component 2, a base 3, and a cutting component 5. The adjustment component 2 is disposed between the cutting table 1 and the base 3 and is used to adjust the spatial position of the crystal 4 on the cutting table 1. The cutting component 5 includes a first roller 51, a second roller 52, and a diamond wire 53. The first roller 51 and the second roller 52 are arranged parallel to each other above the cutting device 100. The cutting table 1 is a platform with a U-shaped groove, and the crystal 4 is fixed in the U-shaped groove. The surfaces of the first roller 52 and the second roller 53 have polyurethane material with grooves cut into them, and the width of the grooves is related to the slice thickness of the crystal 4 to be cut.

[0033] In some preferred embodiments, such as Figure 5As shown, the adjustment assembly 2 includes an angle adjustment component 21, a crystal axial rotation component 22, and a displacement adjustment component 23. The crystal axial rotation component 22 is fixed below the cutting table 1 and includes a rotation mechanism that can rotate horizontally around the vertical direction, driving the cutting table 1 to rotate in the horizontal direction; the angle adjustment component 21 is placed below the crystal axial rotation component 22 and can adjust the tilt angle of the cutting table 1 in the direction perpendicular to the cutting table 1; the displacement adjustment component 23 is placed on the base 3 to control the forward and backward translation of the cutting table 1, and the displacement adjustment component 23 is fixedly connected to the angle adjustment component 21.

[0034] Specific implementation methods are as follows Figure 1 The steps are as follows:

[0035] Step S1: Prepare the crystal blanks to be cut, and check the diameter and length information; turn on the cutting device 100 and check to ensure normal operation; prepare relevant machine materials and consumables; adjust the cutting table 1 normally.

[0036] Step S2: Fix the blank crystal 4 to be cut in the U-shaped groove of the cutting table 1. For example, use a fast-curing adhesive with strong adhesion, which does not generate high temperatures that could cause the crystal to crack and is non-toxic to humans. The height of the U-shaped groove is less than 1 / 2 the diameter of the blank crystal 4. For example, graphite carbon material can be used, which is relatively soft, easy to cut, and can play a good role in fixing. Then fix the U-shaped groove to the cutting table 1 with glue. During cutting, the U-shaped groove and the blank crystal 4 to be cut are cut into thin slices simultaneously. Figure 2 The diagram shows the usage status of the U-shaped groove.

[0037] Step S3: The cutting machine winds a single wire and / or multiple wires and sets the cutting parameters. A certain width is left before and after the single wire so that only one diamond wire 53 cuts during the cutting process, and the other diamond wires 53 do not contact the crystal 4 blank. The cutting wire is an electroplated diamond wire 53 with a wire diameter of 0.1-0.2mm to optimize the cutting force, wire loss, and cutting efficiency.

[0038] Furthermore, the single-wire cutting parameters are set as follows: the tension is adjusted to 60% to 80% of the breaking tension of the wire diameter, with a setting range of 20 to 40 N; the cutting speed is 800 to 1500 m / min; the oscillation angle is 5 to 15°, and the number of oscillations is 20 to 30 times / min; the cutting feed speed is set using a multi-segment cutting method, with 5 to 10 segments set according to the height of the crystal blank to be cut, and the corresponding feed speed is set separately at 0.1 to 0.5 mm / min; the wire loss range is 5 to 30 m / min.

[0039] Step S4: After the cutting process is set, the crystal 4 to be cut is moved to the bottom of the cutting assembly 5 by changing the displacement adjustment component 23 in the adjustment assembly 2. Adjust each part of the adjustment assembly 2 so that the crystal axis of the blank crystal 4 to be cut is perpendicular to the cutting surface, so that the single-line oriented sheet is closer to the required plane angle; raise the cutting table 1 until the diamond wire 53 just contacts the crystal, turn on the cooling water, and start cutting.

[0040] Step S5: Single-line cutting completed, orientation performed. Remove the cutting disc, draw a crosshair perpendicular to the line marks, corresponding to the X and Y axes respectively, measure the crystal orientation angle of the perpendicular line, and calculate the deviation value; adjust component 2 again based on the deviation value, and repeat the orientation measurement with the single-line cutter until the crystal is oriented to the required angle range.

[0041] Step S6: After orientation is completed, perform multi-wire slicing. Based on the product thickness, multi-wire diamond wire 53 is wound on the first roller 51 and the second roller 52. The crystal position remains unchanged, and multi-wire cutting is performed directly. Alternatively, the winding method can be calculated in advance based on the cutting position and crystal length before cutting a single wire, and a combination of single and multi-wire wires can be wound. When cutting multi-wire wires, the horizontal position of the cutting table 1 can be adjusted.

[0042] Furthermore, the multi-wire cutting parameters are set as follows: tension is adjusted to 60%–80% of the breaking tension of the wire diameter, with a setting range of 20–40 N; cutting speed is 800–1500 m / min; oscillation angle is 5–15°, and oscillation frequency is 20–30 times / min; the cutting feed speed is set using a multi-segment cutting method, with 5–10 segments set according to the height of the crystal to be cut, and corresponding feed speeds of 0.1–0.5 mm / min are set separately; the wire loss range is 20–30 m / min.

[0043] Step S7: After setting the multi-wire cutting parameters, adjust the cutting table 1 to be below the multi-wire, raise the cutting table 1 until the diamond wire 53 just contacts the crystal, turn on the cooling water, and start cutting.

[0044] The following are implementation examples:

[0045] Example 1: Cutting small-sized crystals. For example, a doped magneto-optical crystal with a diameter of 56 mm and a length of 40 mm needs to be cut into circular wafers with a thickness of 1.0 ± 0.03 mm.

[0046] Using a combination of winding methods, such as Figure 3 and Figure 4 As shown, the front part of the second roller 52 is wound with a single thread ( Figure 4 The area represented by A1 in the middle), the latter part is wrapped around multiple lines ( Figure 4(Area A2 in the diagram) A 40mm space is left before the single wire without winding diamond wire 53, and a 60mm space is left after the single wire without winding diamond wire 53. Then, a set of 30-40 diamond wires 53 with a 1.2mm groove pitch are wound around the rear of the second roller 52. This arrangement ensures that the single wire will not touch the multiple diamond wires 53 wound around the rear of the second roller 52 when cutting the crystal 4.

[0047] According to the process, the crystal blank 4 is bonded to the U-shaped groove and fixed on the cutting table 1. The single-wire cutting parameters are set as follows: tension is set to 20~40N; cutting speed is 800~1200m / min; swing angle is 5~15°, swing times are 20~30 times / min; the cutting feed speed is set to a 3-segment cutting method, with each segment cutting height of 20mm, and the feed speeds are set to 0.3~0.4mm / min, 0.2~0.3mm / min, and 0.3~0.4mm / min respectively; the wire loss range is 10~20m / min.

[0048] After single-wire cutting is completed, the angle of the cutting disc is tested using an orientation instrument, and the deviation value from the theoretical angle is calculated. The crystal axis angle of the crystal to be cut 4 on the cutting machine is adjusted, and the orientation angle is measured again by single-wire cutting to confirm that it is oriented to the required angle value range, and preparation is made for multi-wire cutting.

[0049] The displacement adjustment component 23 of the moving adjustment assembly 2 positions the crystal 4 below the rear multi-wire section of the second roller 52. The multi-wire cutting parameters are set as follows: tension 20~40N; cutting speed 800~1200m / min; oscillation angle 5~15°; oscillation frequency 20~30 times / min; cutting feed speed is set using a 5-segment cutting method, with each segment having a cutting height of 20mm, and feed speeds of 0.3~0.4mm / min, 0.2~0.3mm / min, 0.1~0.2mm / min, 0.2~0.3mm / min, and 0.3~0.4mm / min respectively; wire loss range 20~30m / min. Cooling water is turned on, and cutting is started.

[0050] The cutting effect is good, and the whole process only takes about 10 to 15 hours. The orientation accuracy is <4′. It can cut 30 to 40 complete and crack-free circular pieces according to the predetermined quantity. The thickness tolerance is <0.01mm, the total thickness difference of a single piece is <0.01mm, the warpage of the circular piece is <0.01mm, the surface roughness is good, and there are no serious line marks, which meets the requirements for subsequent product processing.

[0051] Example 2: Cutting medium-sized crystals. For example, cutting a laser crystal with a diameter of 73mm and a length of 80mm, requiring cutting into 1.4mm thick circular wafers. The same combined winding method is used, such as... Figure 3 and Figure 4As shown, the front part of the second roller 52 is wound with a single thread ( Figure 4 The area represented by A1 in the middle), the latter part is wrapped around multiple lines ( Figure 4 (Area A2 in the diagram). At this point, leave a 60mm gap before the single wire and a 100mm gap after the single wire without winding. Then, wind a set of 40-60 multi-wires with a 1.6mm groove pitch around the rear of the second roller 52. According to the process, the crystal 4 blank is bonded to the U-shaped groove and fixed on the cutting table 1, ready for single-wire cutting.

[0052] The single-wire cutting parameters are as follows: tension is set to 20~40N; cutting speed is 1200~1500m / min; oscillation angle is 15°, oscillation frequency is 30 times / min; the cutting feed speed is set using a 5-segment cutting method, with each segment having a cutting height of 15mm, and feed speeds set to 0.4~0.5mm / min, 0.3~0.4mm / min, 0.2~0.3mm / min, 0.3~0.4mm / min, and 0.4~0.5mm / min respectively; wire loss range is 5~10m / min.

[0053] After single-wire cutting is completed, the angle of the cutting disc is tested using an orientation instrument, and the deviation from the theoretical angle is calculated. The angle of the crystal 4 to be cut on the cutting stage 1 is adjusted, and single-wire cutting is performed again to measure its orientation angle and confirm that it is oriented within the required angle range.

[0054] Move the cutting stage 1 to position the crystal below the multi-wire cutting system and set the multi-wire cutting parameters. Specifically, set the tension to 20~40N; the cutting speed to 1000~1500m / min; the oscillation angle to 10~15°; the oscillation frequency to 10~20 times / min; the cutting feed rate is set using a 10-segment cutting method, with each segment having a cutting height of 7.5mm, and feed rates of 0.4~0.5mm / min, 0.3~0.4mm / min, 0.2~0.3mm / min, 0.1~0.2mm / min, 0.1~0.2mm / min, 0.1~0.2mm / min, 0.1~0.2mm / min, 0.2~0.3mm / min, 0.3~0.4mm / min, and 0.4~0.5mm / min respectively; the wire loss range is 20~30m / min. Turn on the cooling water and start cutting.

[0055] The cutting effect is good, and the whole process only takes about 15 to 20 hours. The orientation accuracy is <6′. It can cut 50 to 60 complete and crack-free circular pieces according to the predetermined quantity. The thickness tolerance is <0.02mm, the total thickness difference of a single piece is <0.01mm, the warpage of the circular piece is <0.01mm, the surface roughness is good, and there are no serious line marks, which meets the requirements for subsequent product processing.

[0056] Example 3: Cutting large-size crystals. For example, cutting a doped magneto-optical crystal with a diameter of 100mm and a length of 120mm, which needs to be cut into circular wafers with a thickness of 1.3±0.02mm. A single-wire + multi-wire winding method is used. The single wire is wound around the middle position of the second roller 52, leaving an 80mm gap before and after, so that the crystal is not cut during the single-wire cutting. After orientation is completed, the multi-wire is re-wound, with a set of 70-90 multi-wires with a 1.5mm groove pitch.

[0057] According to the process, the crystal blank is bonded to the U-shaped groove and fixed on the cutting table 1. The single-wire cutting parameters are set as follows: tension is set to 20~40N; cutting speed is 1200~1500m / min; swing angle is 5~15°, swing frequency is 10~20 times / min; the cutting feed speed is set using a 5-segment cutting method, with each segment cutting height of 25mm, and the feed speeds are set to 0.4~0.5mm / min, 0.3~0.4mm / min, 0.2~0.3mm / min, 0.3~0.4mm / min, and 0.4~0.5mm / min respectively; the wire loss range is 20~30m / min.

[0058] For single-wire cutting, orient the crystal to the desired angle range. Move the displacement adjustment component 23 of the adjustment assembly 2 so that the crystal is below the second roller 52 multi-wire cutter. Set the multi-wire cutting parameters: tension 20~40N; cutting speed 1200~1500m / min; oscillation angle 5~15°; oscillation frequency 10~20 times / min; the cutting feed speed is set using a 10-segment cutting method, with each segment having a cutting height of 12mm. The feed speeds are set to 0.5~0.6mm / min, 0.4~0.5mm / min, 0.3~0.4mm / min, 0.2~0.3mm / min, 0.1~0.2mm / min, 0.1~0.2mm / min, 0.2~0.3mm / min, 0.3~0.4mm / min, 0.4~0.5mm / min, and 0.5~0.6mm / min respectively; the wire loss range is 20~30m / min. Turn on the cooling water and start cutting.

[0059] The cutting effect is good, and the whole process only takes about 20 to 30 hours. The orientation accuracy is <6′. It can cut 70 to 90 complete and crack-free circular pieces according to the predetermined quantity. The thickness tolerance is <0.02mm, the total thickness difference of a single piece is <0.01mm, the warpage of the circular piece is <0.01mm, the surface roughness is good, and there are no serious line marks, which meets the requirements for subsequent product processing.

[0060] The above description is merely a preferred embodiment of the present invention and does not constitute any limitation on the technical scope of the present invention. Therefore, any minor modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention shall still fall within the protection scope of the present invention.

Claims

1. A method for rapid orientation and slicing of crystals, characterized in that, Includes the following steps: Step S1: Detect the diameter and length of the crystal blank to be cut; Step S2: Fix the crystal blank to be cut on the cutting device; the cutting device includes a cutting table, an adjustment component, a base, and a cutting component; the cutting component includes a first roller, a second roller, and diamond wire wound around its surface, wherein the first roller and the second roller are arranged in parallel above the cutting device; Step S3: Wrap diamond wire around the cutting component and set the cutting parameters, including single-wire cutting parameters and multi-wire cutting parameters; Step S4: After setting the cutting parameters, the part of the crystal blank to be cut is moved to the bottom of the cutting component through the adjustment component. The crystal axis of the crystal blank is adjusted to be perpendicular to the cutting surface, and a single-line cutting method is used to cut the oriented sheet. Step S5: After single-wire cutting is completed, orientation is performed to orient the crystal to the required angle range; Step S6: After orientation is completed, multi-wire cutting is performed. Multi-wire winding is performed according to the product thickness. The crystal position remains unchanged. The adjustment component is adjusted to move the part to be cut to the bottom of the cutting component for cutting. Among them, the diamond wire winding method includes single wire, multi-wire or combined winding method. The combined winding method refers to the simultaneous use of single wire and multi-wire. When using the combined winding method, a certain space is left before and after the single wire to avoid winding the diamond wire, so that only one diamond wire is used for crystal cutting during the cutting process. In step S3, the single-wire cutting parameters are set as follows: the tension is adjusted to 60% to 80% of the breaking tension of the wire diameter, with a setting range of 20 to 40 N; the cutting speed is 800 to 1500 m / min; the oscillation angle is 5 to 15°, and the number of oscillations is 20 to 30 times / min; the cutting feed speed is set using a multi-segment cutting method, with 5 to 10 segments set according to the height of the crystal blank to be cut, and the corresponding feed speed is set separately at 0.1 to 0.5 mm / min; the wire loss range is 5 to 30 m / min. In step S3 or S6, the multi-wire cutting parameters are set as follows: the tension is adjusted to 60% to 80% of the breaking tension of the wire diameter, with a setting range of 20 to 40 N; the cutting speed is 800 to 1500 m / min; the oscillation angle is 5 to 15°, and the number of oscillations is 20 to 30 times / min; the cutting feed speed is set using a multi-segment cutting method, with 5 to 10 segments set according to the height of the crystal to be cut, and the corresponding feed speed is set separately at 0.1 to 0.2 mm / min; the wire loss range is 20 to 30 m / min.

2. The crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that, The cutting table is provided with a U-shaped groove, the height of which is lower than the radius of the crystal blank, and the material of the U-shaped groove is graphite carbon material.

3. The crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that, The diamond wire is an electroplated diamond wire with a diameter of 0.1-0.2 mm.

4. The crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that, The adjustment assembly includes an angle adjustment component, a crystal axial rotation component, and a displacement adjustment component. The crystal axial rotation component is fixed below the cutting table and includes a rotation mechanism capable of rotating horizontally around the vertical direction, driving the cutting table to rotate horizontally. The angle adjustment component is located below the crystal axial rotation component and can adjust the tilt angle of the cutting table. The displacement adjustment component is placed on the base to control the forward and backward translation of the cutting table, and the displacement adjustment component is fixedly connected to the angle adjustment component.

5. The crystal cutting method for rapid orientation and slicing according to claim 1, characterized in that, The orientation specifically refers to drawing a crosshair perpendicular to the cut crystal slices according to the markings, measuring the crystal orientation angle of the perpendicular line, and calculating the deviation value; adjusting the position of the cutting stage according to the deviation value so that the crystal axis of the crystal on the cutting stage is perpendicular to the cutting surface.

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