IGZO and ITO compatible etching solution and preparation method and application thereof

Abstract

The invention belongs to the technical field of panel display, and particularly discloses an IGZO and ITO compatible etching solution and a preparation method and application thereof. According to the technical scheme, the metal corrosion inhibitor mainly comprises the following components in percentage by weight: 5-10% of nitric acid, 3-8% of sulfuric acid, 10-100 ppm of a surfactant, 0.01-0.2% of a metal corrosion inhibitor and the balance of deionized water. The etching solution provided by the invention solves the problem of crystallization from the source. And in the use process, the conditions of equipment blockage, substrate scratching and the like caused by crystallization are avoided, the product scrapping risk is effectively reduced, and meanwhile, the equipment maintenance frequency and the human input cost are greatly reduced. Besides, the etching liquid can be directly adapted to an etching machine table of an existing a-Si production line, high cost investment for purchasing special IGZO etching equipment is avoided, and the cost competitiveness and technical advantages of enterprises in the field of manufacturing of liquid crystal display panel backboards are remarkably improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of flat panel display, and particularly relates to an etching solution compatible with IGZO and ITO, a preparation method and application thereof. BACKGROUND

[0002] In the field of liquid crystal display panels (TFT-LCD), the backplane as a core component, its manufacturing process plays a decisive role in display performance. At present, the backplane manufacturing process is mainly formed according to the semiconductor channel layer material, and three technical routes of a-Si (amorphous silicon), LTPS (low temperature polysilicon) and IGZO (indium gallium zinc oxide) are formed.

[0003] The a-Si technology has become the most widely used backplane technology in the early stage and current application due to its significant advantages of simple process and low cost. However, due to its inherent low carrier mobility, the thin film transistor (TFT) switching element occupies a large area in the pixel, resulting in low aperture ratio, which not only seriously restricts the improvement of panel brightness, but also greatly hinders the realization of high pixel density (high PPI). With the rapid development of consumer electronics market, mobile terminal products such as smart phones and tablet computers have put forward higher requirements on display effect, and products gradually evolve towards higher resolution, wider color gamut and lighter and thinner direction, and the a-Si technology has been difficult to meet the needs of these high-end application scenarios. Under the background of this industry change, the performance of LTPS and IGZO technology is better, which has become a new direction of the industry to pursue higher display quality.

[0004] The IGZO technology realizes a major breakthrough in performance by replacing the TFT channel layer material with a metal oxide mainly composed of indium gallium zinc oxide. Its carrier mobility reaches 20-30 times that of a-Si, and it has high uniformity, good light transmission and relatively simple process characteristics. This makes the existing production line based on a-Si actively seek to transform to IGZO technology in order to enhance market competitiveness. In the process of technology transition, in order to effectively control the cost of new equipment investment, make full use of existing production equipment, especially the etching machine to complete the patterning etching of IGZO film layer, it has become a key problem to be solved by the factory. It is worth noting that IGZO (indium gallium zinc oxide) and commonly used transparent conductive film ITO (indium tin oxide) belong to the same metal oxide system, which provides a theoretical basis for developing a general etching solution compatible with ITO and IGZO, which is expected to avoid the need to purchase special etching equipment for IGZO etching, thereby greatly reducing production costs.

[0005] The current widely used ITO etching liquid system mainly contains oxalic acid (content usually 3.2-3.6wt%). The system has many defects that cannot be ignored, among which the crystallization problem caused by low solubility of oxalic acid is particularly prominent. In actual use, oxalic acid is prone to crystallization, which cannot be underestimated. In slight cases, crystallization can block the device sensor, interfere with the normal operation of the device, and even cause the device to shut down; in severe cases, crystallization can scratch the surface of the substrate, directly causing product scrap. In addition, in order to prevent the accumulation of crystallization from affecting the performance of the equipment, the maintenance cycle of the equipment is forced to be greatly shortened, and the maintenance workload is multiplied, greatly increasing the production and operation cost.

[0006] From the structure of the target IGZO product, the electrode layer below it is mostly a Cu / MoNb (copper / molybdenum niobium) stacked structure. When etching the IGZO layer above, the etching liquid will inevitably come into contact with the exposed Cu / MoNb metal stack. Therefore, an ideal compatible etching liquid not only needs to achieve efficient etching of both IGZO and ITO metal oxide films, but also needs to strictly avoid causing significant oxidation or corrosion to the Cu / MoNb metal layer. Once the metal electrode is damaged, it will directly lead to device failure, causing a significant decrease in product yield and seriously affecting production efficiency.

[0007] In summary, the market demand for upgrading display performance promotes the a-Si production line to accelerate the expansion of IGZO technology, and the core of reasonable cost control is to make full use of existing etching equipment. Under this situation, it is urgent to develop a new type of etching liquid. The etching liquid needs to have multiple key characteristics: first, good compatibility, which can effectively etch IGZO and ITO metal oxide films; second, excellent anti-crystallization performance, which completely overcomes the crystallization defects of the oxalic acid system, ensures stable operation of the equipment, and reduces maintenance costs; third, while ensuring etching performance, it provides excellent protection to the underlying key Cu / MoNb stacked metal electrode, achieves extremely low etching rate or selective etching, prevents it from being oxidized or corroded, and thus effectively guarantees product yield. SUMMARY

[0008] In view of the deficiencies in the prior art, the present application provides a compatible IGZO and ITO etching liquid, its preparation method and application. The etching liquid can etch ITO and IGZO film layers, meet the process requirements of ultra-small line width loss in the factory; at the same time, it has protective effect on Cu / MoNb stack, meets the demand of a-Si factory product upgrading, avoids the investment of new etching machine, greatly reduces the cost investment; compared with the existing oxalic acid system etching liquid, there is no crystallization, greatly reduces the risk of product scrap and saves the labor cost investment.

[0009] The present application is realized by the following technical solutions:

[0010] In a first aspect, the present application provides a etching solution compatible with IGZO and ITO, comprising the following components in the weight percentage of 100% of the total weight of the etching solution:

[0011] 5-10% of nitric acid, 3-8% of sulfuric acid, 10-100 ppm of surfactant, 0.01-0.2% of metal corrosion inhibitor, and the rest is deionized water.

[0012] Further, in a preferred embodiment of the present application, the etching solution comprises the following components in the weight percentage of 100% of the total weight of the etching solution:

[0013] 6-8% of nitric acid, 4-6% of sulfuric acid, 10-100 ppm of surfactant, 0.1-0.2% of metal corrosion inhibitor, and the rest is deionized water.

[0014] Further, in a preferred embodiment of the present application, the etching solution comprises the following components in the weight percentage of 100% of the total weight of the etching solution:

[0015] 7% of nitric acid, 5% of sulfuric acid, 10-100 ppm of surfactant, 0.1-0.2% of metal corrosion inhibitor, and the rest is deionized water.

[0016] Further, in a preferred embodiment of the present application, the metal corrosion inhibitor is at least one of 1,2,4-triazole, pentaamino tetrazole, benzimidazole, ethylenediamine, or aminoacetic acid.

[0017] Further, in a preferred embodiment of the present application, the metal corrosion inhibitor comprises a mixture of 1,2,4-triazole and at least one compound selected from pentaamino tetrazole, benzimidazole, ethylenediamine, and aminoacetic acid, wherein 1,2,4-triazole is an essential component.

[0018] Further, in a preferred embodiment of the present application, the metal corrosion inhibitor comprises 1,2,4-triazole.

[0019] Further, in a preferred embodiment of the present application, the surfactant is at least one of sodium dodecyl benzene sulfonate, disodium lauryl sulfosuccinate, or polyethylene glycol.

[0020] Further, in a preferred embodiment of the present application, the surfactant is polyethylene glycol.

[0021] In a second aspect, the present application provides a preparation method of the etching solution compatible with IGZO and ITO, comprising the following steps:

[0022] Step S1: adding 20-40% of the total amount of deionized water in the reaction container, slowly adding 30-50% of the total amount of nitric acid under stirring, controlling the solution temperature not to exceed 30℃, continuing to add the metal corrosion inhibitor, and then stirring uniformly to obtain solution a;

[0023] Step S2: adding 20-40% of the total amount of deionized water in another reaction container, slowly adding the total amount of sulfuric acid, stirring uniformly, continuing to add the remaining nitric acid, and then stirring uniformly to obtain solution b;

[0024] Step S3: slowly adding solution a into solution b, stirring uniformly to obtain solution c;

[0025] Step S4: diluting the surfactant with deionized water to obtain a 10-30% aqueous solution, then adding the solution dropwise into solution c, stirring uniformly, continuing to add the remaining deionized water to the total amount of the formula, completely dissolving, and then filtering to obtain the etching solution.

[0026] Further, in the preferred embodiment of the present application, the temperature is controlled not to exceed 40℃ after adding sulfuric acid in the above step S2, and the temperature is controlled not to exceed 30℃ before adding nitric acid.

[0027] Further, in the preferred embodiment of the present application, the above step S4 filtering involves twice filtering, the first filtering has a filter core diameter of 0.4-0.6μm, and the second filtering has a filter core diameter of 0.2μm.

[0028] In a third aspect, the present application provides an application of the etching solution to a liquid crystal panel.

[0029] Compared with the prior art, the present application has at least the following technical effects:

[0030] The etching solution of the present application realizes efficient and compatible etching of ITO and IGZO film layers through innovative formula design. In terms of etching precision, the single-side line width loss (CD-Loss) is ≤0.15 microns for ITO etching and ≤0.11 microns for IGZO etching, which meets the strict process requirements of ultra-small line width loss in factories and can guarantee the quality stability of display panels in the process of high-precision patterning etching.

[0031] In terms of compatibility and protection, the etching solution effectively etches both ITO and IGZO metal oxide films while showing excellent protection performance for the underlying Cu / MoNb laminated metal electrode. Through special component combination and reaction mechanism, the etching rate of Cu / MoNb laminated layer is significantly reduced, realizing selective etching and preventing the metal electrode from being oxidized or corroded, which fundamentally guarantees the device performance and product yield and fully meets the product performance improvement requirements of a-Si factories upgrading to IGZO technology.

[0032] Compared with the existing etching liquid system mainly containing oxalic acid, the etching liquid of the present application solves the crystallization problem from the root. In the use process, there is no crystallization to block the equipment, scratch the substrate and other situations, effectively reduces the product scrap risk, at the same time, greatly reduces the equipment maintenance frequency and labor cost. In addition, the etching liquid can be directly adapted to the existing a-Si production line etching machine, avoiding the high cost investment of purchasing special IGZO etching equipment, significantly improving the cost competitiveness and technical advantage of enterprises in the field of liquid crystal display panel backboard manufacturing. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 Scanning electron microscope cross-sectional view of ITO etched by the etching liquid obtained in Example 1 of the present application;

[0034] Figure 2 Scanning electron microscope cross-sectional view of IGZO etched by the etching liquid obtained in Example 1 of the present application;

[0035] Figure 3 Scanning electron microscope cross-sectional view of ITO etched by the etching liquid obtained in Example 2 of the present application;

[0036] Figure 4 Scanning electron microscope cross-sectional view of IGZO etched by the etching liquid obtained in Example 2 of the present application;

[0037] Figure 5 Scanning electron microscope cross-sectional view of ITO etched by the etching liquid obtained in Example 3 of the present application;

[0038] Figure 6 Scanning electron microscope cross-sectional view of IGZO etched by the etching liquid obtained in Example 3 of the present application;

[0039] Figure 7 Scanning electron microscope cross-sectional view of ITO etched by the etching liquid obtained in Example 8 of the present application;

[0040] Figure 8 Scanning electron microscope cross-sectional view of IGZO etched by the etching liquid obtained in Example 8 of the present application;

[0041] Figure 9 Scanning electron microscope cross-sectional view of ITO etched by the etching liquid obtained in Comparative Example 1 of the present application;

[0042] Figure 10 Scanning electron microscope cross-sectional view of IGZO etched by the etching liquid obtained in Comparative Example 1 of the present application;

[0043] Figure 11 Scanning electron microscope cross-sectional view of Cu corrosion of IGZO etched by the etching liquid obtained in Example 1 of the present application;

[0044] Figure 12 The scanning electron microscope cross-sectional view of the Cu corrosion condition after etching of the etching solution IGZO obtained in Comparative Example 1 of the present application; DETAILED DESCRIPTION

[0045] The embodiments of the present application will be described in detail below with reference to Examples, but those skilled in the art will understand that the following Examples are only for illustration of the present application and should not be regarded as limiting the scope of the present application, and the specific conditions not noted in the Examples are carried out according to the conventional conditions or the conditions recommended by the manufacturer, and the reagents or instruments not noted for the manufacturer are all conventional products that can be obtained by market purchase.

[0046] The technical solution of the specific embodiment of the present application is:

[0047] A preparation method of an etching solution compatible with IGZO and ITO, comprising the following steps:

[0048] Step S1: In a reaction vessel, 20-40% of the total amount of the formula of deionized water is added, and 30-50% of the total amount of the formula of nitric acid is slowly added under stirring, the temperature of the solution is controlled to be not more than 30℃, and after the metal corrosion inhibitor is continuously added and stirred uniformly, the solution a is obtained until the metal corrosion inhibitor is completely dissolved; the raw material of nitric acid is selected as special 1st grade 70% nitric acid;

[0049] Step S2: In another reaction vessel, 20-40% of the total amount of the formula of deionized water is added, and the formula amount of sulfuric acid is slowly added, the temperature is controlled to be not more than 40℃, and after stirring uniformly, the temperature is controlled to be not more than 30℃, and after the remaining nitric acid is continuously added and stirred uniformly, the solution b is obtained; the sulfuric acid is selected as 98% sulfuric acid.

[0050] Step S3: Slowly add solution a to solution b, and stir uniformly to obtain solution c;

[0051] Step S4: After the surfactant is diluted into a 10-30% aqueous solution with deionized water, it is added dropwise into the solution c, and after stirring uniformly, the remaining deionized water is continuously added to the total amount of the formula, and after complete dissolution, it is filtered, the filtration involves twice filtration, the filter core diameter of the first filtration is 0.4-0.6μm, and the filter core diameter of the second filtration is 0.2μm, to obtain the etching solution.

[0052] Example 1

[0053] In this embodiment, a preparation method of an etching solution compatible with IGZO and ITO is prepared, wherein 100g of etching solution is calculated, and the following steps are followed:

[0054] Step S1: add 20g of deionized water in a reaction container, slowly add 4g of nitric acid in total formula under the condition of stirring, control the solution temperature not more than 30℃, continue to add 0.1g of metal corrosion inhibitor 1,2,4-triazole and stir until 1,2,4-triazole is completely dissolved to obtain solution a;

[0055] Step S2: add 30g of deionized water in another reaction container, slowly add 5.1g of sulfuric acid, control the temperature not more than 40℃, stir uniformly, then control the temperature not more than 30℃, continue to add the remaining 6g of nitric acid and stir uniformly to obtain solution b;

[0056] Step S3: slowly add solution a into solution b, stir uniformly to obtain solution c;

[0057] Step S4: dilute 1mg of polyethylene glycol into 10-30% aqueous solution with deionized water, then add it drop by drop into solution c, stir uniformly, continue to add the remaining deionized water to 100g, completely dissolve and filter, the filtration involves twice filtration, the filter core diameter of the first filtration is 0.5μm, and the filter core diameter of the second filtration is 0.2μm, to obtain the etching liquid.

[0058] Example 2

[0059] A preparation method of an etching liquid compatible with IGZO and ITO is prepared in this example, wherein 100g of etching liquid is calculated according to the following steps:

[0060] Step S1: add 20g of deionized water in a reaction container, slowly add 4g of nitric acid in total formula under the condition of stirring, control the solution temperature not more than 30℃, continue to add 0.1g of metal corrosion inhibitor 1,2,4-triazole and stir until 1,2,4-triazole is completely dissolved to obtain solution a;

[0061] Step S2: add 30g of deionized water in another reaction container, slowly add 5.1g of sulfuric acid, control the temperature not more than 40℃, stir uniformly, then control the temperature not more than 30℃, continue to add the remaining 6g of nitric acid and stir uniformly to obtain solution b;

[0062] Step S3: slowly add solution a into solution b, stir uniformly to obtain solution c;

[0063] Step S4: dilute 1mg of polyethylene glycol into 10-30% aqueous solution with deionized water, then add it drop by drop into solution c, stir uniformly, continue to add the remaining deionized water to 100g, completely dissolve and filter, the filtration involves twice filtration, the filter core diameter of the first filtration is 0.5μm, and the filter core diameter of the second filtration is 0.2μm, to obtain the etching liquid.

[0064] Example 3

[0065] The embodiment prepares a preparation method of an etching solution compatible with IGZO and ITO, wherein 100g of the etching solution is prepared according to the following steps:

[0066] Step S1: 40g of deionized water is added to a reaction container, and 4g of nitric acid in the total amount of the formula is slowly added under stirring, the temperature of the solution is controlled to be not more than 30 DEG C, 0.1g of benzimidazole is continuously added and stirred until the benzimidazole is completely dissolved to obtain solution a;

[0067] Step S2: 20g of deionized water is added to another reaction container, 5.1g of sulfuric acid is slowly added, the temperature is controlled to be not more than 40 DEG C, and after stirring, the temperature is controlled to be not more than 30 DEG C, the remaining nitric acid is continuously added and stirred to obtain solution b;

[0068] Step S3: solution a is slowly added to solution b, and after stirring, solution c is obtained;

[0069] Step S4: 1mg of polyethylene glycol is diluted into a 10-30% aqueous solution with deionized water, and then added dropwise to solution c, stirred uniformly, and then the remaining deionized water is added to 100g, completely dissolved, filtered, and filtered twice, the filter core diameter of the first filtration is 0.5μm, and the filter core diameter of the second filtration is 0.2μm, to obtain the etching solution.

[0070] Example 4:

[0071] The embodiment prepares a preparation method of an etching solution compatible with IGZO and ITO, wherein 100g of the etching solution is prepared according to the following steps, wherein only the metal corrosion inhibitor in step 1 is replaced with ethylenediamine in the preparation step, and the amount of ethylenediamine is changed to 0.3g, and the other steps are the same as example 1.

[0072] Example 5

[0073] The embodiment prepares a preparation method of an etching solution compatible with IGZO and ITO, wherein 100g of the etching solution is prepared according to the following steps, wherein only the metal corrosion inhibitor in step 1 is replaced with ethylenediamine in the preparation step, and the amount of ethylenediamine is changed to 0.3g, and the other steps are the same as example 1.

[0074] Example 6

[0075] The embodiment prepares a preparation method of an etching solution compatible with IGZO and ITO, wherein 100g of the etching solution is prepared according to the following steps, wherein only the amount of nitric acid added in step 2 is replaced, and the remaining nitric acid is added to 3.2g, and the other steps are the same as example 1.

[0076] Example 7

[0077] The present embodiment prepares a preparation method of an etching liquid compatible with IGZO and ITO, wherein 100 g of the etching liquid is prepared, and only the amount of sulfuric acid added in step 2 is replaced in the preparation steps, 7.2 g of sulfuric acid is added, and the other steps are the same as in Example 1.

[0078] Example 8

[0079] The present embodiment prepares a preparation method of an etching liquid compatible with IGZO and ITO, wherein 100 g of the etching liquid is prepared, and only the amount of sulfuric acid added in step 2 is replaced in the preparation steps, 7.2 g of sulfuric acid is added, and the other steps are the same as in Example 1.

[0080] Comparative Example 1

[0081] The present comparative example prepares a preparation method of an etching liquid compatible with IGZO and ITO, wherein 100 g of the etching liquid is prepared, 10 g of nitric acid and 5.1 g of sulfuric acid are added, and the rest is made up with deionized water to obtain the etching liquid.

[0082] Comparative Example 2

[0083] The present comparative example prepares a preparation method of an etching liquid compatible with IGZO and ITO, wherein 100 g of the etching liquid is prepared, and only the amount of surfactant added in step 4 is replaced in the preparation steps, 5 ppm of polyethylene glycol is added, and the other steps are the same as in Example 1.

[0084] Comparative Example 3

[0085] The present comparative example prepares a preparation method of an etching liquid compatible with IGZO and ITO, wherein 100 g of the etching liquid is prepared, and only the amount of surfactant added in step 4 is replaced in the preparation steps, polyethylene glycol is replaced with disodium lauryl sulfosuccinate, and the other steps are the same as in Example 1.

[0086] Comparative Example 4

[0087] The present comparative example prepares a preparation method of an etching liquid compatible with IGZO and ITO, wherein 100 g of the etching liquid is prepared, and only the amount of surfactant added in step 4 is replaced in the preparation steps, polyethylene glycol is replaced with sodium dodecyl benzene sulfonate, and the other steps are the same as in Example 1.

[0088] The etching liquids of the examples and comparative examples are detected for etching effect, as shown in Table 1:

[0089] Etching process: Heat the etching solution in a water bath to 42°C, place the glass substrate in the etching solution under heat preservation conditions, shake the glass substrate at a constant speed while timing, rinse the board surface with pure water for 30 seconds after taking it out of the etching solution, and blow dry it with a nitrogen gun.

[0090] Panel etching effect detection: Scanning electron microscope is used to observe the panel after etching, observe the cross-sectional morphology, and measure the etched CD-Loss; under the condition of the same over-etching amount, the CD-Loss pursued is getting smaller and smaller, controlled within 0.2μm on a single side, and the uniformity is judged to be good; after the etching is completed, the photoresist is removed, and the SEM surface image is observed. There are no spots after the moment, indicating that there is no metal residue and the effect is the best.

[0091]

[0092] Table 1

[0093] As can be seen from the following figures, Figure 1 : The CD-Loss of ITO is 0.10 microns, the cross-sectional morphology is neat, and there are relatively few dot-like metal residues. Under the condition of less metal residue, the smaller the CD-Loss, the better. Figure 2 : The CD-Loss of IGZO is 0.09 microns, the cross-sectional morphology is neat, and there is no metal residue. Under the condition of no metal residue, the smaller the CD-Loss, the better. Figure 3 : The CD-Loss of ITO is 0.13 microns, the cross-sectional morphology is neat, and there are relatively few dot-like metal residues. Under the condition of less metal residue, the smaller the CD-Loss, the better. Figure 4 : The CD-Loss of IGZO is 0.09 microns, the cross-sectional morphology is not flat enough, and there is no metal residue. Under the condition of no metal residue, the smaller the CD-Loss, the better. Figure 5 : The CD-Loss of ITO is 0.13 microns, the cross-sectional morphology is neat, and there are relatively few dot-like metal residues. Under the condition of less metal residue, the smaller the CD-Loss, the better. Figure 6 : The CD-Loss of IGZO is 0.09 microns, the cross-sectional morphology is not flat enough, and there is no metal residue. Under the condition of no metal residue, the smaller the CD-Loss, the better. Figure 7 : The CD-Loss of ITO is 0.13 microns, the cross-sectional morphology is neat, and there are relatively few dot-like metal residues. Under the condition of less metal residue, the smaller the CD-Loss, the better. Figure 8 : The CD-Loss of IGZO is 0.10 microns, the cross-sectional morphology is not flat enough, and there is no metal residue. Under the condition of no metal residue, the smaller the CD-Loss, the better. Figure 9 : The CD-Loss of ITO is 0.17 microns, the cross-sectional morphology is neat, and there are relatively more dot-like metal residues. Figure 10: CD-Loss of IGZO is 0.21 microns, cross-sectional morphology is neat, and there is no metal residue, and the CD-Loss is large under the condition of no metal residue. Figure 11 : There is no hole and burr on the surface of the metal copper, and the etching solution has no corrosion on the metal copper. Figure 12 : There are more burrs on the surface of the copper, and the etching solution has corrosion on the metal copper.

[0094] Finally, it should be noted that: the above only for the preferred embodiments of the present application, and is not intended to limit the scope of protection of the present application. Any modification, equivalent replacement, improvement, etc. within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A compatible IGZO and ITO etching solution, characterized in that: The total weight of the etching solution is 100%, and includes the following components in the following weight percentages: 5-10% nitric acid, 3-8% sulfuric acid, 10-100ppm surfactant, 0.01-0.2% metal corrosion inhibitor, and the balance is deionized water.

2. The compatible IGZO and ITO etching solution according to claim 1, characterized in that The total weight of the etching solution is 100%, and includes the following components in the following weight percentages: 6-8% nitric acid, 4-6% sulfuric acid, 10-100ppm surfactant, 0.1-0.2% metal corrosion inhibitor, and the balance is deionized water.

3. The compatible IGZO and ITO etching solution according to claim 1, characterized in that The metal corrosion inhibitor is at least one of 1,2,4-triazole, pentaaminotetrazolyl, benzimidazole, ethylenediamine or aminoacetic acid.

4. The compatible IGZO and ITO etching solution according to claim 1, characterized in that The metal corrosion inhibitor is a mixture of 1,2,4-triazole and at least one compound selected from pentaaminotetrazole, benzimidazole, ethylenediamine and aminoacetic acid, wherein 1,2,4-triazole is an essential component.

5. The compatible IGZO and ITO etching solution according to claim 1, characterized in that The surfactant is at least one of sodium dodecylbenzenesulfonate, disodium lauryl sulfosuccinate or polyethylene glycol.

6. A method for preparing a compatible IGZO and ITO etching solution according to any one of claims 1 to 5, characterized in that: The following steps are involved: Step S1: adding 20-40% of the total amount of deionized water to a reaction vessel, slowly adding 30-50% of the total amount of nitric acid under stirring, controlling the solution temperature not to exceed 30° C., continuously adding a metal corrosion inhibitor and stirring evenly to obtain a solution a; Step S2: Add 20-40% of the total amount of deionized water to another reaction container, slowly add the formulated amount of sulfuric acid, stir evenly, continue to add the remaining nitric acid and stir evenly to obtain solution b; Step S3: slowly adding solution a into solution b and stirring evenly to obtain solution c; Step S4: Dilute the surfactant with deionized water to a 10-30% aqueous solution, add it dropwise to the solution c, stir evenly, continue to add the remaining deionized water to the total amount of the formula, filter after complete dissolution, and obtain the etching solution.

7. The preparation method according to claim 6, characterized in that In step S2, the temperature is controlled not to exceed 40° C. after adding sulfuric acid, and the temperature is controlled not to exceed 30° C. before adding nitric acid.

8. The preparation method according to claim 6, characterized in that The filtration in step S4 involves two filtrations, the filter element diameter of the first filtration is 0.4-0.6 μm, and the filter element diameter of the second filtration is 0.2 μm.

9. Use of the etching solution according to any one of claims 1 to 5 or the etching solution prepared by the preparation method according to claims 6 to 8 in a liquid crystal panel.

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