A photoresist stripping liquid composition and a method for preparing the same

Abstract

This application discloses a photoresist stripping solution composition and its preparation method, relating to the field of electronic materials technology. The composition comprises 5-10% potassium hydroxide, 2-5% fatty acid, 10-20% benzyl alcohol, 15-25% monoethanolamine, 4.6-15.5% combined additives, and a solvent as the balance. The combined additives include benzotriazole and thiourea derivatives as metal protectants, and fluorocarbon surfactants and ethylene glycol butyl ether as penetration enhancers. This application optimizes the composition of the combined additives to enhance penetration performance and synergistically combines the combined additives with monoethanolamine and fatty acids to prevent the formation of a dense protective film on the metal. This reduces metal corrosion without affecting the photoresist removal effect, resulting in a photoresist stripping solution composition prepared by this method that improves stripping efficiency and effectively protects the metal.

Description

Technical Field

[0001] This application relates to the field of electronic materials technology, and in particular to a photoresist stripping solution composition and its preparation method. Background Technology

[0002] Photoresist stripping solution is a key chemical agent used in semiconductor manufacturing to remove photoresist. Primarily used after photolithography and etching processes, it chemically dissolves or decomposes residual photoresist on the wafer surface, while protecting underlying metal wiring, dielectric layers, and other materials from damage. Its function directly affects the yield and performance of semiconductor devices, making it an indispensable material in advanced manufacturing processes.

[0003] In existing technologies, photoresist stripping solutions typically contain alkaline active ingredients, polar organic solvents, and metal protectants. However, in high aspect ratio structures, such as deep-hole structures in 3D-NAND flash memory manufacturing, the stripping solution has difficulty penetrating, leading to photoresist residue on the bottom. Furthermore, there is a risk of corrosion to metal wirings such as copper and aluminum, especially in stripping solutions containing high concentrations of alkaline components, where electrochemical corrosion can easily occur, resulting in reduced metal linewidth, increased resistance, and impacting device performance. Additionally, for some special metals or alloys, such as copper-tin-silver hybrid metals used in advanced packaging, conventional stripping solutions struggle to effectively protect multiple metals simultaneously, resulting in stripping performance that falls short of expectations and requires further improvement. Summary of the Invention

[0004] In view of this, the first objective of this application is to provide a photoresist stripping solution composition to improve stripping efficiency and effectively protect the metal. The specific solution is as follows:

[0005] A photoresist stripping solution composition comprises, by weight percentage, 5-10% potassium hydroxide, 2-5% fatty acid, 10-20% benzyl alcohol, 15-25% monoethanolamine, 4.6-15.5% combined additives, and the balance being a solvent; wherein the combined additives comprise benzotriazole and thiourea derivatives as metal protectants and fluorocarbon surfactants and ethylene glycol butyl ether as penetration enhancers.

[0006] Preferably, the benzotriazole has a mass percentage of 1-3%, the thiourea derivative has a mass percentage of 0.5-2%, the fluorocarbon surfactant has a mass percentage of 0.1-0.5%, and the ethylene glycol butyl ether has a mass percentage of 1-4%.

[0007] Preferably, the combined additives include nano-titanium dioxide and tetramethylammonium hydroxide as catalytic decomposition agents, wherein the mass percentage of nano-titanium dioxide is 0.5-1.5% and the mass percentage of tetramethylammonium hydroxide is 0.5-1.5%.

[0008] Preferably, the combined additives include tetrasodium ethylenediaminetetraacetate and polyvinylpyrrolidone as stabilizing synergists, wherein the mass percentage of tetrasodium ethylenediaminetetraacetate is 0.5-1% and the mass percentage of polyvinylpyrrolidone is 0.5-2%.

[0009] Preferably, the fatty acid is lauric acid, and the solvent is deionized water.

[0010] The second objective of this application is to provide a method for preparing a photoresist stripping solution composition, which includes the following steps:

[0011] Step 1: Dissolve potassium hydroxide in a solvent, keeping the temperature below 30°C, and obtain a solution.

[0012] Step 2: Add monoethanolamine, benzyl alcohol, and fatty acid to the dissolving solution in sequence, and stir for 30-40 minutes to obtain a mixed solution;

[0013] Step 3: Slowly add benzotriazole and thiourea derivative to the mixed solution, heat to 40-45℃ and stir for 0.8-1.2 h to obtain the mixed composition;

[0014] Step 4: Add fluorocarbon surfactant and ethylene glycol butyl ether to the mixed composition, and stir evenly to obtain the photoresist stripping solution composition.

[0015] Preferably, in step 3, the process further includes first dispersing nano-titanium dioxide by ultrasound to obtain an ultrasonic dispersion, then adding the ultrasonic dispersion to a mixed solution and stirring until homogeneous to obtain a pretreated composition, and then slowly adding benzotriazole and thiourea derivatives to the pretreated composition for reaction.

[0016] Preferably, step 4 further includes adding tetramethylammonium hydroxide, tetrasodium ethylenediaminetetraacetate, and polyvinylpyrrolidone to the mixed composition.

[0017] Preferably, the mass ratio of the tetramethylammonium hydroxide to the potassium hydroxide is 1:(5-10).

[0018] Preferably, the stirring speed is 500-800 rpm, and in step 4, the obtained photoresist stripping solution composition is filtered to control the pore size of the microporous filter membrane to be 0.22 μm.

[0019] As can be seen from the above solutions, this application provides a photoresist stripping solution composition and its preparation method, which have the following beneficial effects:

[0020] 1. By optimizing the composition of additives, the penetration performance is enhanced, and the additives, monoethanolamine and fatty acids are synergistically combined to avoid the formation of a dense protective film on the metal. While not affecting the removal effect of photoresist, the metal corrosion is reduced, so that the photoresist stripping liquid composition prepared by this method has the effect of improving stripping efficiency and effectively protecting the metal.

[0021] 2. By using benzotriazole after ultrasonic dispersion, it synergistically adsorbs on the metal surface with thiourea derivatives and forms a dense protective film. This inhibits electrochemical corrosion while forming microcapsules that adsorb onto the metal surface, thus significantly reducing the slow release rate and improving the metal's protective ability.

[0022] 3. By using fluorocarbon surfactants to reduce the surface tension to below 29 mN / m, the deep hole penetration ability is significantly improved, and the swelling effect of photoresist is enhanced in conjunction with ethylene glycol butyl ether, thereby significantly improving the penetration effect and the removal effect of photoresist.

[0023] 4. The efficiency of photoresist stripping is improved by accelerating the decomposition of photoresist with nano-titanium dioxide and by promoting the decomposition efficiency of photoresist with the synergistic effect of tetramethylammonium hydroxide and potassium hydroxide.

[0024] 5. By using ethylenediaminetetraacetic acid tetrasodium and polyvinylpyrrolidone to synergistically promote the dispersion of each component and prevent agglomeration, the effect of improving peeling efficiency and effectively protecting metal is achieved. Detailed Implementation

[0025] The technical solutions described below in conjunction with the embodiments of this application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0026] It should be mentioned that the fatty acid used in this embodiment is lauric acid, which was purchased from Shanghai Benyi Chemical Co., Ltd., and the solvent is deionized water.

[0027] The following will provide a detailed description of a photoresist stripping solution composition and its preparation method according to this application.

[0028] A photoresist stripping solution composition and its preparation method are disclosed, comprising 5-10% potassium hydroxide, 2-5% fatty acid, 10-20% benzyl alcohol, 15-25% monoethanolamine, 4.6-15.5% combined additives, and a solvent as the balance; wherein the combined additives include benzotriazole and a thiourea derivative as metal protectants and fluorocarbon surfactant and ethylene glycol butyl ether as penetration enhancers. The mass percentage of benzotriazole is 1-3%, and the mass percentage of the thiourea derivative is 0.5-2%. The mass percentage of the fluorocarbon surfactant is 0.1-0.5%, and the mass percentage of ethylene glycol butyl ether is 1-4%.

[0029] To further improve the efficiency of photoresist decomposition and thus enhance photoresist stripping efficiency, the additive combination includes nano-titanium dioxide and tetramethylammonium hydroxide as catalysts for decomposition. The mass percentage of nano-titanium dioxide is 0.5-1.5%, and the mass percentage of tetramethylammonium hydroxide is 0.5-1.5%.

[0030] Meanwhile, to further prevent agglomeration and thus improve stripping efficiency and effectively protect the metal, the additive combination includes tetrasodium ethylenediaminetetraacetate (EDTA) and polyvinylpyrrolidone (PVP) as stabilizing synergists. The mass percentage of EDTA is 0.5-1%, and the mass percentage of PPV is 0.5-2%.

[0031] A method for preparing a photoresist stripping solution composition, comprising the following steps:

[0032] Step 1: Dissolve potassium hydroxide in a solvent, keeping the temperature below 30°C, and obtain a solution.

[0033] Step 2: Add monoethanolamine, benzyl alcohol, and fatty acid to the dissolving solution in sequence, and stir for 30-40 minutes to obtain a mixed solution;

[0034] Step 3: After ultrasonically dispersing nano-titanium dioxide, an ultrasonic dispersion is obtained. The ultrasonic dispersion is then added to a mixed solution and stirred until homogeneous to obtain a pretreated composition. Benzotriazole and thiourea derivatives are then slowly added to the pretreated composition. After heating to 40-45℃ and stirring for 0.8-1.2 hours, a mixed composition is obtained.

[0035] Step 4: Add tetramethylammonium hydroxide, tetrasodium ethylenediaminetetraacetate, polyvinylpyrrolidone, fluorocarbon surfactant and ethylene glycol butyl ether to the mixed composition. After stirring evenly, filter the mixture and control the pore size of the microporous filter membrane to be 0.22 μm to obtain the photoresist stripping solution composition.

[0036] The mass ratio of tetramethylammonium hydroxide to potassium hydroxide added was 1:(5-10). The stirring speed was controlled at 500-800 rpm. Benzotriazole was in the form of nano-sized BTA particles, and the ultrasonic dispersion was controlled at a frequency of 40 kHz, a power of 300 W, and a dispersion time of 15 minutes to achieve preliminary improvement in dispersibility. The thiourea derivative was obtained by microencapsulation with a gelatin-gum arabic shell, and the specific thiourea derivative used was methylthiourea.

[0037] The nano-titanium dioxide has a particle size of 20-30 nm, and 0.1 wt% of a conventional dispersant, such as PEG-4000, is added to the ultrasonic dispersion.

[0038] Example 1

[0039] A photoresist stripping solution composition and its preparation method are disclosed, comprising 5% potassium hydroxide, 2% fatty acid, 10% benzyl alcohol, 15% monoethanolamine, 4.6% combined additives, and a solvent as the balance, by mass percentage. The combined additives include benzotriazole and a thiourea derivative as metal protectants, fluorocarbon surfactant and ethylene glycol butyl ether as penetration enhancers, nano-titanium dioxide and tetramethylammonium hydroxide as catalytic decomposition agents, and tetrasodium ethylenediaminetetraacetate and polyvinylpyrrolidone as stabilizing synergists. The mass percentages of benzotriazole are 1% and thiourea derivatives are 0.5%. The mass percentages of fluorocarbon surfactant and ethylene glycol butyl ether are 0.1%, ethylene glycol butyl ether is 1%, nano-titanium dioxide is 0.5%, tetramethylammonium hydroxide is 0.5%, ethylenediaminetetraacetate is 0.5%, and polyvinylpyrrolidone is 0.5%.

[0040] A method for preparing a photoresist stripping solution composition, comprising the following steps:

[0041] Step 1: Dissolve potassium hydroxide in a solvent, keeping the temperature below 30°C, and obtain a solution.

[0042] Step 2: Add monoethanolamine, benzyl alcohol, and fatty acid to the dissolving solution in sequence, and stir for 30 minutes to obtain a mixed solution;

[0043] Step 3: After ultrasonically dispersing nano-titanium dioxide, an ultrasonic dispersion is obtained. The ultrasonic dispersion is then added to a mixed solution and stirred until homogeneous to obtain a pretreated composition. Benzotriazole and thiourea derivatives are then slowly added to the pretreated composition. After heating to 40°C and stirring for 1.2 hours, a mixed composition is obtained.

[0044] Step 4: Add tetramethylammonium hydroxide, tetrasodium ethylenediaminetetraacetate, polyvinylpyrrolidone, fluorocarbon surfactant and ethylene glycol butyl ether to the mixed composition. After stirring evenly, filter the mixture and control the pore size of the microporous filter membrane to be 0.22 μm to obtain the photoresist stripping solution composition.

[0045] The stirring speed was controlled at 500 rpm. Benzotriazole was in the form of nano-sized BTA particles, and the ultrasonic dispersion was controlled at a frequency of 40 kHz, a power of 300 W, and a dispersion time of 15 minutes to achieve initial improved dispersibility. The thiourea derivative was obtained by microencapsulation with a gelatin-gum arabic shell, and specifically, methylthiourea was used.

[0046] The nano-titanium dioxide has a particle size of 20-30 nm, and 0.1 wt% of a conventional dispersant, such as PEG-4000, is added to the ultrasonic dispersion.

[0047] Example 2

[0048] A photoresist stripping solution composition and its preparation method are disclosed, comprising 8% potassium hydroxide, 3% fatty acid, 14% benzyl alcohol, 20% monoethanolamine, 10.2% combined additives, and a solvent as the balance, by mass percentage. The combined additives include benzotriazole and a thiourea derivative as metal protectants, fluorocarbon surfactant and ethylene glycol butyl ether as penetration enhancers, nano-titanium dioxide and tetramethylammonium hydroxide as catalytic decomposition agents, and tetrasodium ethylenediaminetetraacetate and polyvinylpyrrolidone as stabilizing synergists. The mass percentages of benzotriazole are 2.1% and thiourea derivatives are 1.3%. The mass percentages of fluorocarbon surfactant are 0.4% and ethylene glycol butyl ether is 2.3%. The mass percentages of nano-titanium dioxide are 0.8% and tetramethylammonium hydroxide is 1.1%. The mass percentages of tetrasodium ethylenediaminetetraacetate are 0.9% and polyvinylpyrrolidone is 1.3%.

[0049] A method for preparing a photoresist stripping solution composition, comprising the following steps:

[0050] Step 1: Dissolve potassium hydroxide in a solvent, keeping the temperature below 30°C, and obtain a solution.

[0051] Step 2: Add monoethanolamine, benzyl alcohol, and fatty acid to the dissolving solution in sequence, and stir for 35 minutes to obtain a mixed solution;

[0052] Step 3: After ultrasonically dispersing nano-titanium dioxide, an ultrasonic dispersion is obtained. The ultrasonic dispersion is then added to a mixed solution and stirred until homogeneous to obtain a pretreated composition. Benzotriazole and thiourea derivatives are then slowly added to the pretreated composition. After heating to 43°C and stirring for 1 hour, a mixed composition is obtained.

[0053] Step 4: Add tetramethylammonium hydroxide, tetrasodium ethylenediaminetetraacetate, polyvinylpyrrolidone, fluorocarbon surfactant and ethylene glycol butyl ether to the mixed composition. After stirring evenly, filter the mixture and control the pore size of the microporous filter membrane to be 0.22 μm to obtain the photoresist stripping solution composition.

[0054] The stirring speed was controlled at 600 rpm. Benzotriazole was in the form of nano-sized BTA particles, and the ultrasonic dispersion was controlled at a frequency of 40 kHz, a power of 300 W, and a dispersion time of 15 minutes to achieve initial improved dispersibility. The thiourea derivative was obtained by microencapsulation with a gelatin-gum arabic shell, and specifically, methylthiourea was used.

[0055] The nano-titanium dioxide has a particle size of 20-30 nm, and 0.1 wt% of a conventional dispersant, such as PEG-4000, is added to the ultrasonic dispersion.

[0056] Example 3

[0057] A photoresist stripping solution composition and its preparation method are disclosed, comprising 10% potassium hydroxide, 2-5% fatty acid, 20% benzyl alcohol, 25% monoethanolamine, 15.5% combined additives, and a solvent as the balance; wherein the combined additives include benzotriazole and a thiourea derivative as metal protectants, fluorocarbon surfactant and ethylene glycol butyl ether as penetration enhancers, nano-titanium dioxide and tetramethylammonium hydroxide as catalytic decomposition agents, and tetrasodium ethylenediaminetetraacetate and polyvinylpyrrolidone as stabilizing synergists. The mass percentages of benzotriazole are 3% and thiourea derivatives are 2%. The mass percentages of fluorocarbon surfactant are 0.5% and ethylene glycol butyl ether is 4%. The mass percentages of nano-titanium dioxide are 1.5% and tetramethylammonium hydroxide is 1.5%. The mass percentages of tetrasodium ethylenediaminetetraacetate are 1% and polyvinylpyrrolidone is 2%.

[0058] A method for preparing a photoresist stripping solution composition, comprising the following steps:

[0059] Step 1: Dissolve potassium hydroxide in a solvent, keeping the temperature below 30°C, and obtain a solution.

[0060] Step 2: Add monoethanolamine, benzyl alcohol, and fatty acid to the dissolving solution in sequence, and stir for 40 minutes to obtain a mixed solution;

[0061] Step 3: After ultrasonically dispersing nano-titanium dioxide, an ultrasonic dispersion is obtained. The ultrasonic dispersion is then added to a mixed solution and stirred until homogeneous to obtain a pretreated composition. Benzotriazole and thiourea derivatives are then slowly added to the pretreated composition. After heating to 45°C and stirring for 0.8 hours, a mixed composition is obtained.

[0062] Step 4: Add tetramethylammonium hydroxide, tetrasodium ethylenediaminetetraacetate, polyvinylpyrrolidone, fluorocarbon surfactant and ethylene glycol butyl ether to the mixed composition. After stirring evenly, filter the mixture and control the pore size of the microporous filter membrane to be 0.22 μm to obtain the photoresist stripping solution composition.

[0063] The stirring speed was controlled at 800 rpm. Benzotriazole was in the form of nano-sized BTA particles, and the ultrasonic dispersion was controlled at a frequency of 40 kHz, a power of 300 W, and a dispersion time of 15 minutes to achieve initial improved dispersibility. The thiourea derivative was obtained by microencapsulation with a gelatin-gum arabic shell, and specifically, methylthiourea was used.

[0064] The nano-titanium dioxide has a particle size of 20-30 nm, and 0.1 wt% of a conventional dispersant, such as PEG-4000, is added to the ultrasonic dispersion.

[0065] Comparative Example 1

[0066] The difference between Comparative Example 1 and Example 2 is that the metal protectant in Comparative Example 1 is benzotriazole.

[0067] Comparative Example 2

[0068] The difference between Comparative Example 2 and Example 2 is that the metal protectant in Comparative Example 2 is a thiourea derivative.

[0069] Comparative Example 3

[0070] The difference between Comparative Example 3 and Example 2 is that the penetration enhancer in Comparative Example 3 is a fluorocarbon surfactant.

[0071] Comparative Example 4

[0072] The difference between Comparative Example 4 and Example 2 is that the penetration enhancer in Comparative Example 4 is ethylene glycol butyl ether.

[0073] Comparative Example 5

[0074] The difference between Comparative Example 5 and Example 2 is that the catalyst in Comparative Example 5 is nano-titanium dioxide.

[0075] Performance testing:

[0076] 1. Material preparation: The photoresist stripping solution compositions obtained in Examples 1 to 4 and Comparative Examples 1 to 4 were tested on a lithography machine with a thickness of 200 nm.

[0077] 2. Based on AFM test: The peeling efficiency test results were obtained using a full HD industrial CCD microscope of Shenzhen Shuan Technology / 380030D. The conditions were immersion at 50℃ for 10 minutes to test the residual amount.

[0078] 3. Based on TEM testing: Obtain the results of photoresist residue at the bottom, control the test structure with an aspect ratio of 10:1, and treat it at 60℃ for 15 min to test the removal effect;

[0079] 4. Based on metal compatibility testing: Obtain the metal corrosion rate.

[0080] The specific test results are shown in Table 1 below.

[0081] Table 1 Performance Test Results

[0082] Residual amount Removal effect Metal corrosion rate Example 1 <3nm Complete removal Overall speed less than 0.1 nm / min Example 2 <3nm Complete removal Overall speed less than 0.1 nm / min Example 3 <3nm Complete removal Overall speed less than 0.1 nm / min Comparative Example 1 <3nm Complete removal Overall speed less than 0.15 nm / min Comparative Example 2 <3nm Complete removal Overall speed is less than 0.2 nm / min Comparative Example 3 <13nm Basic removal Overall speed less than 0.1 nm / min Comparative Example 4 <22nm Some residue Overall speed less than 0.1 nm / min Comparative Example 5 <9nm Basic removal Overall speed less than 0.15 nm / min

[0083] As shown in Table 1 above, the photoresist stripping solution composition obtained in this application achieves a photoresist removal residue of less than 3 nm, indicating complete removal. Regarding the metal corrosion rate, the overall rate is less than 0.1 nm / min. This demonstrates that the photoresist stripping solution composition obtained in this application improves stripping efficiency and effectively protects the metal. There are corresponding differences between the photoresist stripping solution compositions in Comparative Examples 1, 2, and 5 and Example 2. The metal corrosion rate of the obtained photoresist stripping solution compositions is lower than that of Example 2, indicating that the combined additives used have a significant impact on the metal protection of the photoresist stripping solution composition. Furthermore, based on Comparative Examples 3, 4, and 5, it can be found that the stripping effect of the obtained photoresist stripping solution compositions is lower than that of Example 2, indicating that the combined additives used have a significant impact on the stripping effect of the photoresist stripping solution compositions.

[0084] In summary, this application provides a photoresist stripping solution composition and its preparation method. This composition and method enhance penetration performance by optimizing the composition of additives, and synergistically combine additives with monoethanolamine and fatty acids to prevent the formation of a dense protective film on the metal. This reduces metal corrosion without affecting the photoresist removal effect, resulting in a photoresist stripping solution composition that improves stripping efficiency and effectively protects the metal. Simultaneously, by using benzotriazole, ultrasonically dispersed, and synergistically adsorbed onto the metal surface with a thiourea derivative to form a dense protective film, a microcapsule-like adsorption onto the metal surface is formed, inhibiting electrochemical corrosion while significantly slowing the release rate and improving metal protection. Furthermore, the surface tension is reduced to below 29 mN / m using a fluorocarbon surfactant, significantly improving deep-pore penetration. Additionally, ethylene glycol butyl ether synergistically enhances the swelling effect of the photoresist, thereby significantly improving both penetration and photoresist removal efficiency. Meanwhile, by accelerating the decomposition of photoresist with nano-titanium dioxide and promoting the decomposition efficiency of photoresist with tetramethylammonium hydroxide and potassium hydroxide, the stripping efficiency of photoresist is improved. Furthermore, by promoting the dispersion of each component and preventing agglomeration with tetrasodium ethylenediaminetetraacetate and polyvinylpyrrolidone, the stripping efficiency is improved and the metal is effectively protected.

[0085] The terms “first,” “second,” “third,” “fourth,” etc., used in this application (if applicable) are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments described herein can be implemented in orders other than those described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, or apparatus that includes a series of steps or units is not necessarily limited to those explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, or apparatus.

[0086] It should be noted that the use of terms such as "first" and "second" in this application is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of those features. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. If the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed in this application.

[0087] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A photoresist stripping solution composition, characterized in that, It comprises 5-10% potassium hydroxide, 2-5% fatty acids, 10-20% benzyl alcohol, 15-25% monoethanolamine, 4.6-15.5% combined additives, and the balance being solvent; wherein the combined additives include benzotriazole and thiourea derivatives as metal protectants, fluorocarbon surfactants and ethylene glycol butyl ether as penetration enhancers, nano-titanium dioxide and tetramethylammonium hydroxide as catalytic decomposition agents, and tetrasodium ethylenediaminetetraacetate and polyvinylpyrrolidone as stabilizing synergists.

2. The photoresist stripping solution composition according to claim 1, characterized in that: The benzotriazole has a mass percentage of 1-3%, the thiourea derivative has a mass percentage of 0.5-2%, the fluorocarbon surfactant has a mass percentage of 0.1-0.5%, and the ethylene glycol butyl ether has a mass percentage of 1-4%.

3. The photoresist stripping solution composition according to claim 1, characterized in that: The mass percentage of the nano-titanium dioxide is 0.5-1.5%, and the mass percentage of the tetramethylammonium hydroxide is 0.5-1.5%.

4. The photoresist stripping solution composition according to claim 1, characterized in that: The mass percentage of the ethylenediaminetetraacetic acid tetrasodium is 0.5-1%, and the mass percentage of the polyvinylpyrrolidone is 0.5-2%.

5. The photoresist stripping solution composition according to claim 1, characterized in that: The fatty acid is lauric acid, and the solvent is deionized water.

6. A method for preparing a photoresist stripping solution composition, used to prepare the photoresist stripping solution composition as described in any one of claims 1-4, characterized in that, Includes the following steps: Step 1: Dissolve potassium hydroxide in a solvent, keeping the temperature below 30°C, and obtain a solution. Step 2: Add monoethanolamine, benzyl alcohol, and fatty acid to the dissolving solution in sequence, and stir for 30-40 minutes to obtain a mixed solution; Step 3: First, the nano-titanium dioxide is ultrasonically dispersed to obtain an ultrasonic dispersion. Then, the ultrasonic dispersion is added to the mixed solution and stirred evenly to obtain a pretreated composition. Benzotriazole and thiourea derivative are slowly added to the pretreated composition. After heating to 40-45℃ and stirring for 0.8-1.2 hours, a mixed composition is obtained. Step 4: Add tetramethylammonium hydroxide, tetrasodium ethylenediaminetetraacetate, polyvinylpyrrolidone, fluorocarbon surfactant and ethylene glycol butyl ether to the mixed composition, and stir evenly to obtain the photoresist stripping solution composition.

7. The method for preparing a photoresist stripping solution composition according to claim 6, characterized in that: The mass ratio of the added tetramethylammonium hydroxide to the added potassium hydroxide is 1:(5-10).

8. The method for preparing a photoresist stripping solution composition according to claim 6, characterized in that: The stirring speed is 500-800 rpm.