Hybrid phase change radio frequency switch device, preparation method and application

Abstract

The invention discloses a hybrid phase change radio frequency switch device, and belongs to the field of microwave radio frequency devices. The hybrid phase change radio frequency switch device comprises a first input end used for receiving a radio frequency signal; the first output end is used for outputting a radio frequency signal; the radio frequency transmission module is used for transmitting a radio frequency signal, when the first micro heater heats the first phase change material layer, the first radio frequency transmission layer is communicated with the second radio frequency transmission layer, the first phase change radio frequency switch is switched on, and the radio frequency signal passes through the first phase change radio frequency switch; when the second micro heater heats the second phase change material layer, the first radio frequency transmission layer is communicated with the second radio frequency transmission layer, the second phase change radio frequency switch is switched on, the radio frequency signal passes through the second phase change radio frequency switch, and the phase change material of the first phase change material layer is different from the phase change material of the second phase change material layer. According to the hybrid phase-change radio frequency switching device disclosed by the invention, switches are flexibly switched according to application scenarios, and different switching functions are realized.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of microwave radio frequency devices, and particularly relates to a hybrid phase change radio frequency switch device, a preparation method and application. BACKGROUND

[0002] Current radars, communications, electronic warfare, etc. adopt discrete radio systems, and each system uses a large number of dedicated radio frequency sensors. Discrete radio systems increase the volume, power consumption and cost of the system. The use of multifunctional integrated radio technology can realize the functions of radars, electronic warfare and communication data links with a set of shared radio modules, thereby realizing a miniaturized radio system.

[0003] The gating of the radio frequency module is particularly important in realizing multifunctional integrated radio, and the radio frequency switch plays a key role, which requires the radio frequency switch to have low loss, fast switching and high integration. Currently, commercial radio frequency switches are mainly SOI (Silicon-On-Insulator) CMOS switches. Although the switching speed is fast, the parasitic capacitance effect at high frequencies results in high insertion loss, which cannot meet the application requirements of millimeter waves. Radio frequency MEMS switches have extremely low on-resistance and extremely low insertion loss, but the switching speed can only reach microseconds, which cannot meet the requirements of fast switching in millimeter wave radar scenarios.

[0004] In recent years, radio frequency switches based on phase change materials have received widespread attention due to their excellent high-frequency performance and zero static power consumption. Phase change materials, as the core of phase change radio frequency switches, play a crucial role in the realization of switching functions. However, current research on phase change materials in phase change radio frequency switches is still in its infancy, and only traditional chalcogenide phase change materials such as GeTe and Sb2Te3 have been studied. Although these materials have high-frequency advantages in terms of insertion loss and other characteristics, their speed still cannot break through 100 nanoseconds. Therefore, a single phase change radio frequency switch cannot meet the requirements of radio module gating in multifunctional integrated radio. Therefore, it is necessary to develop a phase change switch system that realizes high-frequency performance and high speed. SUMMARY

[0005] In view of the defects and improvement needs of the prior art, the present application provides a hybrid phase change radio frequency switch device, which aims to obtain a phase change radio frequency switch with high-frequency low-loss performance and a high-speed phase change radio frequency switch by limiting the phase change materials of the two phase change material layers respectively, and to realize flexible switching between the two, thereby solving the problem that current radio frequency switches cannot simultaneously achieve high speed and high-frequency performance in multifunctional integrated technology.

[0006] To achieve the above-mentioned purpose, according to one aspect of the present application, a hybrid phase change radio frequency switch device is provided, comprising:

[0007] a first input terminal for receiving a radio frequency signal;

[0008] a first output terminal for outputting a radio frequency signal;

[0009] a radio frequency transmission module for transmitting a radio frequency signal, wherein the radio frequency transmission module comprises a first phase change radio frequency switch and a second phase change radio frequency switch, wherein the first phase change radio frequency switch is composed of a first radio frequency transmission layer, a first phase change material layer, a first micro-heater, and a second radio frequency transmission layer; the second phase change radio frequency switch is composed of a first radio frequency transmission layer, a second phase change material layer, a second micro-heater, and a second radio frequency transmission layer; when the first micro-heater heats the first phase change material layer, the first radio frequency transmission layer and the second radio frequency transmission layer are in communication, the first phase change radio frequency switch is turned on, and the radio frequency signal passes through the first phase change radio frequency switch; when the second micro-heater heats the second phase change material layer, the first radio frequency transmission layer and the second radio frequency transmission layer are in communication, the second phase change radio frequency switch is turned on, and the radio frequency signal passes through the second phase change radio frequency switch, wherein the phase change material of the first phase change material layer is different from the material of the second phase change material layer.

[0010] The application also discloses a single-pole multi-throw switch system, comprising:

[0011] a radio frequency signal input terminal;

[0012] N radio frequency signal output terminals;

[0013] N radio frequency transmission modules, wherein the input terminals of each radio frequency transmission module are connected to serve as the radio frequency signal input terminal, each radio frequency transmission module comprises an output terminal, and the N radio frequency transmission modules constitute N radio frequency signal output terminals.

[0014] The application also discloses a multiple-pole single-throw switch system, comprising:

[0015] N radio frequency signal input terminals;

[0016] a radio frequency signal output terminal;

[0017] N radio frequency transmission modules, wherein the output terminals of each radio frequency transmission module are connected to serve as the radio frequency signal output terminal, each radio frequency transmission module comprises an input terminal, and the N radio frequency transmission modules constitute N radio frequency signal input terminals.

[0018] The application also discloses a preparation method of the mixed phase change radio frequency switch device, comprising:

[0019] S1: depositing a substrate isolation layer on a substrate;

[0020] S2: preparing a micro-heater support layer on the substrate isolation layer;

[0021] S3: preparing a micro-heater on the micro-heater support layer;

[0022] S4: preparing a heat transport layer on the micro-heater and the micro-heater support layer;

[0023] S5: etching an interconnection hole on the heat transport layer;

[0024] S6: preparing a first phase change material layer on the heat transport layer;

[0025] S7: preparing a first phase change material protection layer on the first phase change material layer;

[0026] S8: preparing a second phase change material layer on the structure obtained through the above process;

[0027] S9: preparing a second phase change material protection layer on the second phase change material layer;

[0028] S10: patterning the first phase change material layer and the second phase change material layer;

[0029] S11: preparing a radio frequency transmission electrode and a grounding electrode;

[0030] S12: preparing a passivation layer.

[0031] Overall, the above technical solutions conceived by the present application can achieve the following beneficial effects:

[0032] By setting two radio frequency transmission paths between the radio frequency ports, the phase change material is limited on the two paths to obtain a phase change radio frequency switch with high frequency and low loss performance and a high-speed phase change radio frequency switch, which can realize flexible switching between the two, solve the problem that the current radio frequency switch cannot simultaneously have high speed and high frequency performance in multifunctional integrated technology, and compared with the traditional radio frequency switch, the radio frequency switch system based entirely on phase change material has the advantages of simple manufacturing process and high integration, and can be used to realize a miniaturized radio frequency system and meet the multifunctional radio frequency application requirements. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 A front view structural diagram of a hybrid phase change radio frequency switch device provided for an embodiment of the present application;

[0034] Figure 2 A side view structural diagram of a hybrid phase change radio frequency switch device provided for an embodiment of the present application;

[0035] Figure 3 A top view structural diagram of a radio frequency transmission module of a hybrid phase change radio frequency switch device provided for an embodiment of the present application;

[0036] Figure 4An equivalent model diagram of the hybrid phase change radio frequency switch device provided by the embodiment of the present application is shown in the figure;

[0037] Figure 5 A front view structural diagram of the single-pole double-throw switch system provided by the embodiment of the present application is shown in the figure;

[0038] Figure 6 A side view structural diagram of the single-pole double-throw switch system provided by the embodiment of the present application is shown in the figure;

[0039] Figure 7 A top view structural diagram of the single-pole double-throw switch system provided by the embodiment of the present application is shown in the figure;

[0040] Figure 8 An equivalent model diagram of the single-pole double-throw switch system provided by the embodiment of the present application is shown in the figure;

[0041] In the figure, 1 is a substrate, 2 is a substrate isolation layer, 3 is a micro-heater support layer, 4 is a micro-heater, 5 is a heat transfer layer, 61, 62, 63 and 64 are phase change material layers, 7 is a phase change material protection layer, 81, 82, 83 and 84 are radio frequency transmission layers, 88 is a grounding electrode, and 9 is a passivation layer. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solutions and advantages of the present application clearer and more apparent, the present application will be further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application. In addition, the technical features involved in each embodiment of the present application described below can be combined with each other as long as they do not conflict with each other.

[0043] In the present application, the terms "first", "second", etc. (if any) in the present application and the drawings are used to distinguish similar objects, and do not necessarily describe a specific order or sequence.

[0044] Embodiment 1:

[0045] The present application provides a hybrid phase change radio frequency switch device, Figure 1 、 Figure 2 and Figure 3 The structure of the hybrid phase change radio frequency switch device is shown in the figure. Among them Figure 1 The front view of the hybrid phase change radio frequency switch device is shown in the figure, Figure 2 The side view of the hybrid phase change radio frequency switch device is shown in the figure, Figure 3 The top view of the radio frequency transmission layer in the hybrid phase change radio frequency switch device is shown in the figure, Figure 1 will be described in combination with Figure 2 and Figure 3 . As Figures 1-3As shown, the hybrid phase change radio frequency switch device comprises, from bottom to top, a substrate 1, a substrate isolation layer 2, a micro-heater support layer 3, two micro-heaters 4, a heat transport layer 5, a phase change material layer 61, 62, a phase change material protection layer 7, a radio frequency transmission layer 81, 82, and a passivation layer 9. The micro-heater support layer 3 includes two opening structures, and the two micro-heaters 4 are respectively embedded in the two opening structures. The thickness of the micro-heater 4 is the same as the thickness of the micro-heater support layer 3, and the upper and lower surfaces of the two are located in the same plane. The phase change material layer 61, 62 is also called the first phase change material layer 61 and the second phase change material layer 62. The phase change material of the first phase change material layer 61 and the phase change material of the second phase change material layer 62 can use the same phase change material or different phase change materials. In the embodiment of the present application, in order to realize the switching function of high frequency and high efficiency, the phase change materials used by the two are different. Figure 3 The relative spatial relationship of the phase change material layer 61, 62, the radio frequency transmission layer 81, 82, the micro-heater 4, and the phase change material protection layer 7 is shown. As Figure 3 It can be seen that the phase change material protection layer 7 is located directly above the phase change material layer 61, 62, and is used to protect the phase change material layer 61, 62, completely covering the interval between the radio frequency transmission layer 81 and the radio frequency transmission layer 82. In other words, the state of the phase change material layer 61 and 62 determines the connection or disconnection between the radio frequency transmission layer 81 and 82. The radio frequency transmission layer 81 and the radio frequency transmission layer 82 are not directly connected, and there is a gap between them. The gap is partially filled with the phase change material layer 61 and 62. The radio frequency transmission module also includes a ground electrode 88. In an optional embodiment, the radio frequency transmission layer 81 includes a first input end, a first connection end, and a second connection end; the radio frequency transmission layer 82 includes a first output end, a first connection end, and a second connection end. The first input end serves as the input end of the hybrid phase change radio frequency switch device, and the first output end serves as the output end of the hybrid phase change radio frequency switch device. The first connection end in the radio frequency transmission layer 81 and the first connection end in the radio frequency transmission layer 82 are connected to the phase change material layer 61, and the second connection end in the radio frequency transmission layer 81 and the second connection end in the radio frequency transmission layer 82 are connected to the phase change material layer 62. The first connection end of the radio frequency transmission layer 81 and the first connection end of the radio frequency transmission layer 82 are distributed at both ends of the phase change material layer 61. Similarly, the second connection end of the radio frequency transmission layer 81 and the second connection end of the radio frequency transmission layer 82 are distributed at both ends of the phase change material layer 62. The radio frequency transmission layer 81, 82, the ground electrode 88, the phase change material layer 61, 62 form a coplanar waveguide transmission structure. The coplanar waveguide transmission structure and the micro-heater 4 are combined to form a radio frequency transmission module. The ground electrode 88 is symmetrically distributed at both ends of the first input end and the first output end along the horizontal direction of the top view, and the ground electrode 88 does not contact the first input end and the first output end. Figure 3The radio frequency transmission layer 81 and the radio frequency transmission layer 82 are symmetrical along the longitudinal direction of the top view, the radio frequency transmission layer 81, the radio frequency transmission layer 82, the phase change material layer 61 and the first micro-heater 4 form a first phase change radio frequency switch, and the radio frequency transmission layer 81, the radio frequency transmission layer 82, the phase change material layer 62 and the second micro-heater 4 form a second phase change radio frequency switch.

[0046] Specifically, when the first micro-heater 4 located below the phase change material layer 61 heats the phase change material layer 61, the state of the phase change material layer 61 is changed, the radio frequency transmission layer 81 and the radio frequency transmission layer 82 are in communication, that is, the first input end and the first output end are in communication, and the transmission of the radio frequency signal is realized; similarly, when the second micro-heater 4 located below the phase change material layer 62 heats the phase change material layer 62, the state of the phase change material layer 62 is changed, the radio frequency transmission layer 81 and the radio frequency transmission layer 82 are in communication, that is, the first input end and the first output end are in communication, and the transmission of the radio frequency signal is realized. Due to the difference in the phase change materials of the phase change material layer 61 and the phase change material layer 62, high frequency and high efficiency functions are respectively realized, thereby realizing the switching or mixed use of high frequency and high efficiency switches and solving the defect that the speed and efficiency of the existing switch system cannot be compatible. In the embodiment of the present application, the phase change material of the phase change material layer 61 is a phase change material with low resistivity, and the low resistivity here refers to low crystal state resistance and low energy consumption; the phase change material of the phase change material layer 62 is a phase change material with high crystallization speed, and the high crystallization speed here refers to a crystallization speed in the nanometer level, such as Sc-Sb-Te, and the crystallization speed reaches 0.7 nanoseconds, and the high crystallization speed material makes the switch turn on faster.

[0047] Further, the passivation layer 9 is located above the radio frequency transmission layer and the phase change material layer and covers the first connection end and the second connection end of the radio frequency transmission layer 81 and the radio frequency transmission layer 82 and the phase change material layer 61 and 62 directly above, so as to prevent the mixed phase change radio frequency switch device from being damaged.

[0048] It should be noted that, compared with the traditional mixed phase change radio frequency switch device, the mixed phase change radio frequency switch device of the present application sets two different phase change materials at different positions between the radio frequency transmission layers 81 and 82 in the same horizontal layer, wherein the radio frequency transmission layers 81 and 82 are located at the two ends of the first phase change material and the second phase change material, and different phase change switch functions are realized by selecting two phase change materials with different characteristics. At the same time, in the embodiment of the present application, the phase change material protection layer covering the first phase change material and the second phase change material can solve the problem of cross interference of the two phase change materials and the problem of oxidation of the phase change material.

[0049] Figure 4The figure shows an equivalent model diagram of a hybrid phase-change RF switch device according to an embodiment of the present invention. Phase-change material layers 61 and 62 utilize different phase-change materials, and the first and second phase-change RF switches have different functions. For example, the first phase-change RF switch has low insertion loss and high power capacity, while the second phase-change RF switch has high speed. Because the two phase-change RF switches can be flexibly switched, the hybrid phase-change RF switch device disclosed in the present invention achieves both high efficiency and high speed, addressing the drawback of the prior art in which both high efficiency and high speed cannot be achieved in a single switch system.

[0050] In the embodiment of the present invention, the phase change material in the first phase change RF switch is at least one of GeTe and In3SbTe2, which has the advantage of low insertion loss and can achieve low loss conduction of RF signals; the phase change material in the second phase change RF switch is Sc x (Sb2Te3) y 、Y x (Sb2Te3) y 、In x (Sb2Te3) y 、Ti x (Sb2Te3) y At least one of them has the advantage of high-speed phase switching, which can realize rapid opening and closing of the RF switch.

[0051] Example 2:

[0052] The present invention provides an operating method of a hybrid phase-change radio frequency switch device, comprising:

[0053] like Figure 4 As shown, the hybrid phase-change RF switch device includes a first phase-change RF switch and a second phase-change RF switch. The hybrid phase-change RF switch device is configured as follows:

[0054] In an optional embodiment, the first phase-change RF switch is a low insertion loss switch, the second phase-change RF switch is a high-speed switch, and the RF signal is input from the first input end and output from the first output end.

[0055] When the hybrid phase-change RF switch device is initially in the closed state, the first phase-change RF switch and the second phase-change RF switch are disconnected; an on-state signal excitation is applied to the first phase-change RF switch, such as heating the phase-change material layer 61 by the first microheater 4, and the first phase-change RF switch is turned on. Due to the non-volatile characteristics of the phase-change material, the switch state will not change with the withdrawal of the excitation signal, that is, the first phase-change RF switch remains in the on state, and the second phase-change RF switch does not apply signal excitation and remains in the off state. The RF signal is transmitted from the first input end to the first output end through the first phase-change RF switch with low loss.

[0056] Similarly, the second phase change radio frequency switch is applied with the signal excitation in the on state, the second phase change radio frequency switch is turned on, the first phase change radio frequency switch is not applied with the signal excitation, and remains off, the radio frequency signal is transmitted at high speed from the first input end to the first output end through the second phase change radio frequency switch, and when the second phase change radio frequency switch is applied with the signal excitation in the off state, the radio frequency signal transmission can be quickly blocked. In another transmission mode, when the first phase change radio frequency switch and the second phase change radio frequency switch are simultaneously applied with the excitation signal in the on state, due to the faster switching speed of the second phase change radio frequency switch, the second phase change radio frequency switch is turned on first, the radio frequency signal is transmitted at low delay between the first input end and the first output end, and after the first phase change radio frequency is fully turned on, the second phase change radio frequency switch is turned off, the radio frequency signal is transmitted at low loss between the first input end and the first output end, and through the cooperative work of the first phase change radio frequency switch and the second phase change radio frequency switch, the radio frequency signal is transmitted at low delay in the radio frequency path and high quality transmission is realized.

[0057] Embodiment 3:

[0058] The application also provides a single-pole multi-throw switch system based on the hybrid phase change radio frequency switch device, Figure 5 、 6 and 7 shows a single-pole multi-throw switch system based on the hybrid phase change radio frequency switch device provided by the embodiment of the application. Those skilled in the art should understand that the application takes a single-pole double-throw switch as an example for illustration, and a single-pole multi-throw switch can be realized by stacking multiple single-pole double-throw switches. The following only takes a single-pole double-throw switch as an example to illustrate the switch structure and the function realization mode. For example, Figure 5 、 6 , 7 shows a single-pole double-throw switch system based on the hybrid phase change radio frequency switch device, and the switch structure is based on the combination expansion of the hybrid phase change radio frequency switch device in embodiment 1.

[0059] Specifically, multiple radio frequency transmission modules are arranged in the hybrid phase change radio frequency switch device in embodiment 1, and multiple transmission paths are increased. Specifically, as shown in Figure 7As shown, the first RF transmission module includes RF transmission layers 81, 82, phase change material layers 61, 62, and two microheaters 4; the second RF transmission module includes RF transmission layers 83, 84, phase change material layers 63, 64, and two microheaters 4. The structure and connection relationship of the RF transmission layers 81, 82, phase change material layers 61, 62, and microheaters 4 in the first RF transmission module refer to the description in Example 1 and will not be repeated here. Furthermore, the second RF transmission module has the same structure as the first RF transmission module, except that the phase change material layers 63 and 64 and the phase change material layers 61 and 62 can be the same material or different phase change materials. When the second RF transmission module is exactly the same as the first RF transmission module, the phase change material layer 63 is the same as the phase change material layer 61, and the phase change material layer 64 is the same as the phase change material layer 62.

[0060] Specifically, the single-pole multi-throw switch system based on the hybrid phase-change RF switch device in the present invention is to connect the first input terminal of the first RF transmission module with the second input terminal of the second RF transmission module to form the input terminal of the RF signal of the single-pole multi-throw switch system, that is, Figure 8 The RF port 1 in the single-pole multi-throw switch system includes two output terminals, namely the first output terminal of the first RF transmission module and the second output terminal of the second RF transmission module. Figure 8 RF Port 2 and RF Port 3 in the .

[0061] Further, the structure of the single-pole double-throw switch system refers to Figures 5-7 As shown in the figure: the single-pole double-throw switch system based on the hybrid phase-change RF switch device includes, from bottom to top, a substrate 1, a substrate isolation layer 2, a microheater support layer 3, four microheaters 4, a heat transfer layer 5, phase-change material layers 61, 62, 63, 64, a phase-change material protection layer 7, two RF transmission layers 81, two RF transmission layers 82, and a passivation layer 9. The relationship and position of the microheater support layer 3 and the microheater 4 refer to the description in Example 1 and will not be described again to avoid redundancy. Figure 7As shown, the single-pole double-throw switch system includes a first radio frequency transmission module, as shown in the red dashed box, specifically including radio frequency transmission layers 81, 82, phase change material layers 61, 62, and micro-heater 4; a second radio frequency transmission module, as shown in the blue dashed box, including radio frequency transmission layers 81, 82, phase change material layers 63, 64, and micro-heater 4. The four phase change material layers can use the same phase change material or different phase change materials. Micro-heater 4 is arranged below each phase change material layer. The phase change material protection layer 7 is located directly above the phase change material layers 61, 62, 63, and 64, and is used to protect the phase change material layers 61, 62, 63, and 64. The first radio frequency transmission module includes a first input and a first output, and the second video transmission module includes a second input and a second output. The first input and the second input share the input of the single-pole double-throw switch system, and the first output and the second output are the outputs of the single-pole double-throw switch system. As can be seen, the ground electrodes are symmetrically distributed along the axis of the input of the single-pole double-throw switch system. Similarly, the first output and the second output are symmetrically distributed along the axis and have ground electrodes 88. For details, see Figure 7 The relationship between the components in the first radio frequency transmission module and the second transmission module and the process of conduction and disconnection are described in Embodiment 1. For brevity, they are not described again.

[0062] By setting multiple radio frequency transmission modules and sharing the input of each radio frequency transmission layer to form the input of the single-pole double-throw switch system, a single-pole multi-throw switch system is constructed. Those skilled in the art should understand that based on multiple radio frequency transmission layers, connecting the output of each radio frequency transmission layer can construct a multiple-input single-output switch system, also known as a multiple-pole single-throw switch system. When the single-pole multi-throw switch system is provided with N radio frequency transmission modules, the input of each radio frequency transmission module is connected to form an input of a radio frequency signal, and the output of N radio frequency signals, forming a single-pole multi-throw switch system. Conversely, connecting the output of each radio frequency transmission module to form a radio frequency signal output and N radio frequency signal inputs forms a multiple-pole single-throw switch system.

[0063] Figure 8An equivalent model diagram of a single-pole double-throw switch system according to an embodiment of the present application is shown. As shown in the diagram, the single-pole double-throw switch system includes three radio frequency ports, radio frequency port 1 is an input end of the single-pole double-throw switch system, radio frequency ports 2 and 3 are first and second output ends of the single-pole double-throw switch system, there are two radio frequency signal transmission paths between radio frequency port 1 and radio frequency port 2, the two radio frequency transmission paths respectively include a first phase change radio frequency switch and a second phase change radio frequency switch, and the first phase change radio frequency switch and the second phase change radio frequency switch form a first hybrid phase change radio frequency switch; there are two radio frequency transmission paths between radio frequency port 1 and radio frequency port 3, the two radio frequency transmission paths respectively include a third phase change radio frequency switch and a fourth phase change radio frequency switch, and the third phase change radio frequency switch and the fourth phase change radio frequency switch form a second hybrid phase change radio frequency switch; the first hybrid phase change radio frequency switch and the second hybrid phase change radio frequency switch can select the same or different phase change material layers, that is, phase change material layers 61 and 62 are the same as phase change material layers 63 and 64, at this time, the first hybrid phase change radio frequency switch and the second hybrid phase change radio frequency switch are completely the same; when the phase change materials of the phase change material layers 61, 62, 63 and 64 are different from each other, the first hybrid phase change radio frequency switch and the second hybrid phase change radio frequency switch can respectively realize switches with different functions according to different phase change materials, such as low insertion loss, high power capacity, high speed, etc. In an optional embodiment, the first phase change radio frequency switch has a low insertion loss function, and the second phase change radio frequency switch has a high speed function, at this time, the first hybrid phase change radio frequency switch can realize two functions of low insertion loss and high speed; the third phase change radio frequency switch is the same as the first phase change radio frequency switch, and the fourth phase change radio frequency switch is the same as the second phase change radio frequency switch, that is, the second hybrid phase change radio frequency switch can also realize two functions of low insertion loss and high speed, and the two phase change radio frequency switches can be flexibly switched to realize different functions in the radio frequency transmission path.

[0064] Embodiment 4:

[0065] The present application shows an operating method of a single-pole double-throw switch system, as shown in the diagram, the single-pole double-throw switch system includes four phase change radio frequency switches, which are a first phase change radio frequency switch, a second phase change radio frequency switch, a third phase change radio frequency switch and a fourth phase change radio frequency switch. Figure 8

[0066] In an optional embodiment, the first phase change radio frequency switch is a low insertion loss switch, the second phase change radio frequency switch is a high speed switch, the third phase change radio frequency switch is a low insertion loss switch, and the fourth phase change radio frequency switch is a high speed switch, and the radio frequency signal is input from the radio frequency port 1 and output from the radio frequency port 2 or the radio frequency port 3.

[0067] ​When the initial state of the single-pole double-throw switch system is the off state, the first, second, third and fourth phase change radio frequency switches are all off, when the first phase change radio frequency switch is applied with a signal of the on state, the first phase change radio frequency switch is turned on, and due to the non-volatile characteristic of the phase change material, the switch state will not change with the removal of the excitation signal, that is, the first phase change radio frequency switch remains in the on state, the second, third and fourth phase change radio frequency switches are not applied with a signal excitation and remain in the off state, and the radio frequency signal passes through the first phase change radio frequency switch from the radio frequency port 1 to the radio frequency port 2 with low loss.

[0068] In another working mode, the switches in the single-pole double-throw switch system are all in the off state, when the second phase change radio frequency switch is applied with a signal of the on state, the second phase change radio frequency switch is turned on, the first, third and fourth phase change radio frequency switches are not applied with a signal excitation and remain in the off state, the radio frequency signal passes through the second phase change radio frequency switch from the radio frequency port 1 to the radio frequency port 2 quickly, and when the second phase change radio frequency switch is applied with a signal of the off state, the transmission of the radio frequency signal can be quickly blocked; similarly, the third phase change radio frequency switch and the fourth phase change radio frequency switch are applied with a signal excitation of the on state, and the radio frequency signal passes through the corresponding switch.

[0069] In another working mode, when all the switches in the single-pole double-throw switch system are in the off state, if the first phase change radio frequency switch and the second phase change radio frequency switch are applied with a signal excitation of the on state at the same time, due to the faster switching speed of the second phase change radio frequency switch, the second phase change radio frequency switch will be turned on earlier than the first phase change radio frequency switch, the radio frequency signal passes through the second phase change radio frequency switch from the radio frequency port 1 to the radio frequency port 2 with low delay, after the first phase change radio frequency switch is completely turned on, the second phase change radio frequency switch is turned off, the radio frequency signal passes through the first phase change radio frequency switch between the radio frequency port 1 and the radio frequency port 2 with low loss, and the first phase change radio frequency switch and the second phase change radio frequency switch work cooperatively to realize high-quality signal transmission after low-delay establishment of the radio frequency signal. The third phase change radio frequency signal and the fourth phase change radio frequency signal are the same, and will not be described again.

[0070] Embodiment 5:

[0071] The embodiment of the present application provides a preparation method of a hybrid phase change radio frequency switch device, and specifically comprises the following steps:

[0072] S1: depositing a substrate isolation layer on a substrate; in an optional embodiment, the high-resistance silicon is cleaned as the substrate, and a plasma enhanced chemical vapor deposition (PECVD) method is used to deposit a substrate isolation layer SiO2 on the substrate;

[0073] S2: preparing a micro-heater support layer on the substrate isolation layer; in an optional embodiment, AlN is deposited as the micro-heater support material by chemical vapor deposition (CVD), the micro-heaters are patterned by ultraviolet lithography or electron beam lithography, and the micro-heater support layer material in the regions without photoresist protection is etched to obtain the micro-heater support layer;

[0074] S3: preparing a micro-heater on the micro-heater support layer; in an embodiment, Ti, TiN and W are sequentially deposited by magnetron sputtering or chemical vapor deposition, wherein Ti and TiN are used as adhesion layer materials and W is used as heater material, the Ti, TiN and W on the surface of the micro-heater support material AlN are removed by chemical mechanical grinding to level the surface and obtain the micro-heater confined in the micro-heater support layer, as shown in FIG. 2; Figure 1

[0075] S4: preparing a heat transport layer on the micro-heater and the micro-heater support layer; in an embodiment, AlN is deposited as the heat transport layer by chemical vapor deposition;

[0076] S5: etching interconnection holes in the heat transport layer; in an embodiment, the electrodes of the micro-heaters are patterned by ultraviolet lithography, and the regions of the heat transport layer without photoresist protection are etched to obtain the interconnection holes;

[0077] S6: preparing a first phase change material layer on the heat transport layer; in an embodiment, the first phase change material is deposited on the heat transport layer by magnetron sputtering, and annealing is performed after deposition;

[0078] S7: preparing a first phase change material protection layer on the first phase change material layer; in an embodiment, SiN is deposited by PECVD, and the second phase change material layer region is patterned by lithography, and the SiN and GeTe in the second phase change material region are etched;

[0079] S8: preparing a second phase change material layer on the structure obtained in step S7; in an embodiment, the second phase change material is deposited by magnetron sputtering, and annealing is performed after deposition;

[0080] S9: preparing a second phase change material protection layer on the second phase change material layer; in an embodiment, SiN is deposited by PECVD;

[0081] S10: patterning the first phase change material layer and the second phase change material layer; in an embodiment, the first phase change material layer and the second phase change material layer are protected by mask by lithography, and the phase change material protection layer and the phase change material outside the mask are etched;

[0082] ​S11: preparing the radio frequency transmission electrode and the grounding electrode; in an embodiment, Ti and Au are sequentially deposited by using the electron beam evaporation plating method, the radio frequency transmission electrode and the grounding electrode are protected by using the photolithography method, Ti and Au outside the mask area are etched, and the radio frequency transmission electrode, such as the first input end, the first output end, and the grounding electrode, is obtained;

[0083] S12: preparing the passivation layer; in an embodiment, SiO2 is deposited by using the PECVD method, the passivation layer is protected by using the photolithography method, the external connection area of the radio frequency transmission electrode and the grounding electrode is exposed, and SiO2 outside the mask area is etched, so that the preparation of the hybrid type phase change radio frequency switch device is completed.

[0084] In the embodiments of the present application, the substrate includes but is not limited to silicon, diamond, sapphire, silicon carbide, indium phosphide, gallium arsenide, gallium nitride, quartz, and glass; the substrate isolation layer includes but is not limited to silicon dioxide, silicon nitride, aluminum nitride, and aluminum oxide; the micro-heater support layer includes but is not limited to silicon dioxide, silicon nitride, aluminum nitride, and aluminum oxide; the micro-heater includes but is not limited to tungsten, titanium, titanium tungsten, nickel chromium silicon, and titanium nitride; the first phase change material layer is a material with a low insertion loss function, and includes but is not limited to at least one of GeTe, In3SbTe2; the second phase change material layer is a material with a high-speed conduction function, and includes but is not limited to at least one of Sc x (Sb2Te3) y , Y x (Sb2Te3) y , In x (Sb2Te3) y , Ti x (Sb2Te3) y ; the radio frequency transmission electrode and the grounding electrode are metal materials, and include but are not limited to gold, silver, copper, aluminum, platinum, and the like; the passivation layer includes but is not limited to silicon dioxide, silicon nitride, silicon oxynitride, aluminum oxide, and aluminum nitride.

[0085] It should be noted that in the above process, the phase change material protection layer is used to protect the phase change material from being contaminated by the photoresist, and can prevent cross interference between the two phase change materials. Since the phase change material needs to be annealed after deposition, if there is no phase change material protection layer, the two phase change materials directly contact each other, and there is a problem of material mixing during annealing, which causes the characteristics of the material to change. The introduction of the material protection layer and the new preparation process can solve the problems of contamination and component change of the phase change material.

[0086] In summary, the mixed phase change radio frequency switch device in the application can flexibly switch the switch type according to the application scene, realize different switch functions, and solve the problem that the speed and high frequency performance of the current radio frequency switch are difficult to be considered in the multifunctional integrated technology. Secondly, through the preparation method of the mixed phase change radio frequency switch device disclosed in the application, the radio frequency transmission module of multiple phase change materials can be prepared on the same plane. The method can solve the mixing problem of multiple phase change materials caused by annealing and the pollution problem of phase change materials caused by photolithography, can realize the phase change material with more stable components, and improves the performance and reliability of the phase change radio frequency switch.

[0087] Those skilled in the art will easily understand that the above description is only the preferred embodiment of the application, and is not used to limit the application, and any modification, equivalent replacement and improvement made within the spirit and principle of the application should be included in the protection scope of the application.

Claims

1. A hybrid phase-change radio frequency switch device, characterized in that: include: A first input terminal, for receiving a radio frequency signal; A first output terminal, used for outputting a radio frequency signal; A radio frequency transmission module for transmitting radio frequency signals, wherein the radio frequency transmission module includes a first phase-change radio frequency switch and a second phase-change radio frequency switch, wherein the first phase-change radio frequency switch is composed of a first radio frequency transmission layer, a first phase-change material layer, a first microheater and a second radio frequency transmission layer; the second phase-change radio frequency switch is composed of a first radio frequency transmission layer, a second phase-change material layer, a second microheater and a second radio frequency transmission layer, when the first microheater heats the first phase-change material layer, the first radio frequency transmission layer is connected to the second radio frequency transmission layer, the first phase-change radio frequency switch is turned on, and the radio frequency signal passes through the first phase-change radio frequency switch; when the second microheater heats the second phase-change material layer, the first radio frequency transmission layer is connected to the second radio frequency transmission layer, the second phase-change radio frequency switch is turned on, and the radio frequency signal passes through the second phase-change radio frequency switch, wherein the phase change material of the first phase-change material layer is different from the phase change material of the second phase-change material layer.

2. The hybrid phase-change radio frequency switch device according to claim 1, characterized in that: The material of the first phase change material layer is at least one of GeTe and In3SbTe2.

3. The hybrid phase-change radio frequency switch device according to claim 1, characterized in that: The material of the second phase change material layer is Sc x (Sb2Te3) y 、Y x (Sb2Te3) y 、In x (Sb2Te3) y 、Ti x (Sb2Te3) y At least one of .

4. The hybrid phase-change radio frequency switch device according to claim 1, characterized in that: The radio frequency transmission module further includes a plurality of ground electrodes, which are symmetrically distributed at the first input end and at both ends of the first output end in a transverse direction.

5. The hybrid phase-change radio frequency switch device according to claim 1, characterized in that: It also includes a substrate, a substrate isolation layer, a microheater support layer, a heat transfer layer, a radio frequency transmission module, a phase change material protective layer, and a passivation layer. The substrate, substrate isolation layer, microheater support layer, heat transfer layer, phase change material protective layer, and passivation layer are arranged from bottom to top, wherein the microheater support layer includes two opening structures, the first microheater and the second microheater are respectively embedded in the first opening structure and the second opening structure, the thickness of the microheater is the same as the thickness of the microheater support layer, the upper and lower surfaces of the first microheater, the second microheater, and the microheater support layer are located in the same plane, and the first radio frequency transmission layer and the second radio frequency transmission layer are located in the same plane.

6. The hybrid phase-change radio frequency switch device according to claim 5, characterized in that: The first micro heater is disposed directly below the first phase change material layer, and the second micro heater is disposed directly below the second phase change material layer.

7. The hybrid phase-change radio frequency switch device according to claim 6, characterized in that: The phase change material protection layer covers the first phase change material layer and the second phase change material layer and is used to protect the phase change material layers.

8. A single-pole multi-throw switch system, characterized in that: include: A radio frequency signal input terminal; N radio frequency signal output terminals; N radio frequency transmission modules as described in claim 1, wherein the input end of each radio frequency transmission module is connected as a radio frequency signal input end, and each radio frequency transmission module includes an output end, constituting N radio frequency signal output ends.

9. A multi-pole single-throw switch system, characterized in that: include: N radio frequency signal input terminals; a radio frequency signal output terminal; N radio frequency transmission modules as described in claim 1, wherein the output end of each radio frequency transmission module is connected as a radio frequency signal output end, and each radio frequency transmission module includes an input end, constituting N radio frequency signal input ends.

10. A method for preparing the hybrid phase-change radio frequency switch device according to any one of claims 1 to 7, characterized in that: include: S1: depositing a substrate isolation layer on the substrate; S2: preparing a micro heater support layer on the substrate isolation layer; S3: preparing a micro heater on the micro heater support layer; S4: preparing a heat transfer layer on the microheater and the microheater support layer; S5: Etching interconnect holes in the heat transfer layer; S6: preparing a first phase change material layer on the heat transfer layer; S7: preparing a first phase change material protective layer on the first phase change material layer; S8: preparing a second phase change material layer on the structure obtained by the above process; S9: preparing a second phase change material protective layer on the second phase change material layer; S10: patterning the first phase-change material layer and the second phase-change material layer; S11: preparing radio frequency transmission electrodes and grounding electrodes; S12: preparing a passivation layer.

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