Grinding method and grinding equipment for control separation blade

Abstract

The invention relates to the technical field of semiconductors, and discloses a grinding method and grinding equipment for a control separation blade, and the method comprises the following steps: carrying out first grinding treatment on a first control separation blade on a first grinding pad to obtain a second control separation blade; second grinding treatment is conducted on the second control blocking piece on a second grinding pad, a third control blocking piece is obtained, and the hardness of the second grinding pad is smaller than that of the first grinding pad; and performing third grinding treatment on the third control separation blade on the second grinding pad by adopting a chemical surfactant to obtain the target control separation blade. According to the invention, the surface of the third control separation blade can be converted from hydrophobicity to hydrophilicity, so that pollutants on the surface of the third control separation blade can be more easily contacted with a cleaning solution and dissolved, and the yield and reliability of the control separation blade are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a grinding method and grinding equipment for a control block sheet. Background Art

[0002] Control wafers are typically used to monitor the process conditions of silicon wafer processing equipment. After one or more uses, they can become damaged, rendering them unusable and a significant expense in semiconductor production. Wafer reclaiming is a process that recycles and reprocesses control wafers to ensure they meet usable conditions again, thereby limiting production costs associated with wafer loss.

[0003] In the related art, wafer recycling generally adopts a two-step grinding method to control the flatness of the silicon wafer surface. First, the damaged layer is removed by the first step of grinding (rough polishing), and then the damage caused by the first step of grinding is repaired by the second step of grinding (fine polishing). During the grinding process, the silicon wafer is easily contaminated by the grinding pad, grinding fluid or by-products generated during the grinding process. Since the surface of the silicon wafer after fine polishing is hydrophobic and difficult to wet the surface, the cleaning fluid cannot effectively contact and dissolve the contaminants during the cleaning process, which poses a great challenge to cleaning. As a result, the silicon wafer is prone to surface defects, which ultimately reduces the yield and reliability of the control wafer. Summary of the Invention

[0004] In view of this, the present invention provides a grinding method and a grinding device for a control and blocking piece, so as to solve the problem in the related art that defects are easily formed on the surface of the control and blocking piece.

[0005] In a first aspect, the present invention provides a method for grinding a control and blocking sheet, the method comprising: performing a first grinding treatment on a first control and blocking sheet on a first grinding pad to obtain a second control and blocking sheet; performing a second grinding treatment on the second control and blocking sheet on a second grinding pad to obtain a third control and blocking sheet, wherein the hardness of the second grinding pad is less than that of the first grinding pad; performing a third grinding treatment on the third control and blocking sheet on the second grinding pad using a chemical surfactant to obtain a target control and blocking sheet.

[0006] The method for polishing a control block sheet provided in this embodiment includes a second polishing process on the second control block sheet using a second polishing pad to obtain a third control block sheet, followed by a third polishing process using a chemical surfactant. The hydrophobic groups in the chemical surfactant can combine with the hydrophobic groups on the surface of the control block sheet, causing the hydrophilic groups in the chemical surfactant to face outward, thereby converting the surface of the third control block sheet from hydrophobic to hydrophilic. This allows contaminants on the surface of the third control block sheet to more easily come into contact with and dissolve in the cleaning solution, thereby improving the yield and reliability of the control block sheet. Furthermore, the chemical surfactant also has a cleaning effect, helping to improve wafer surface defects and enhance cleaning efficiency.

[0007] In an optional embodiment, before the second polishing pad performs a third polishing process on the third control plate using a chemical surfactant, the method further includes: determining a polishing time of the third polishing process according to a polishing time of the second polishing process.

[0008] In this embodiment, the grinding time of the third grinding process is determined according to the grinding time of the second grinding process, which can avoid the situation where the longer grinding time of the second grinding process causes an increase in pollutants and makes it difficult to completely remove the pollutants remaining on the surface.

[0009] In an optional embodiment, determining the grinding time of the third grinding process according to the grinding time of the second grinding process includes: determining the grinding time of the third grinding process according to the grinding time of the second grinding process by the following formula:

[0010] T3=0.2×T2+5

[0011] Wherein, T3 represents the grinding time of the third grinding process, T2 represents the grinding time of the second grinding process, and the unit of 5 is seconds.

[0012] In an optional embodiment, before the second polishing pad uses a chemical surfactant to perform a third polishing treatment on the third control and blocking piece, the method further includes: using a cooling medium to cool the third control and blocking piece; using a chemical surfactant on the second polishing pad to perform a third polishing treatment on the third control and blocking piece, including: using a chemical surfactant on the second polishing pad to perform a third polishing treatment on the third control and blocking piece after the cooling treatment.

[0013] In this embodiment, a cooling medium is used to cool the third control and blocking sheet before the third grinding process, thereby preventing the high temperature caused by grinding from affecting the performance of the chemical surfactant. Furthermore, the cooling medium can clean the grinding pad, reducing contamination and facilitating the next grinding step.

[0014] In an optional embodiment, the flow rate of the cooling medium is 10 L / min, and the flushing time of the cooling medium ranges from 20 s to 40 s.

[0015] In an optional embodiment, the grinding pressure of the third grinding process ranges from 0.5 psi to 1 psi.

[0016] In this embodiment, the control and blocking plate is ground under a grinding pressure of 0.5psi to 1psi. The mechanical stress on the surface of the control and blocking plate is small, and the surface is not easily cracked due to the stress during the grinding process. New defects will not be generated on the surface of the control and blocking plate due to grinding during the grinding process.

[0017] In an optional embodiment, the flow rate of the chemical surfactant ranges from 200 mL / min to 300 mL / min.

[0018] In an alternative embodiment, the chemical surfactant component includes polyethylene glycol or polyoxyethylene octylphenyl ether.

[0019] The hydrophilic ether bonds in polyethylene glycol can couple with inorganic molecules, while the hydrophobic ends of the long carbon chains can wrap around organic molecules, forming micelles for solubilization. The benzene ring structure in polyoxyethylene octylphenyl ether can adsorb organic pollutants, while the polyoxyethylene chains interact with water molecules to dissolve inorganic molecules. Therefore, both polyethylene glycol and polyoxyethylene octylphenyl ether have a certain cleaning ability for both inorganic and organic residues.

[0020] In an optional embodiment, the first control and blocking piece is a single crystal silicon piece.

[0021] In the second aspect, the present invention provides a grinding device for a control and blocking sheet, the device including a nozzle, a first grinding pad, and a second grinding pad, wherein the hardness of the second grinding pad is less than that of the first grinding pad; the first grinding pad is used to perform a first grinding treatment on the first control and blocking sheet to obtain a second control and blocking sheet; the second grinding pad is used to perform a second grinding treatment on the second control and blocking sheet to obtain a third control and blocking sheet; the nozzle is used to provide a chemical surfactant to the second grinding pad to perform a third grinding treatment on the third control and blocking sheet to obtain a target control and blocking sheet. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in related technologies, the following briefly introduces the drawings required for use in the specific embodiments or related technical descriptions. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 FIG. 4 is a schematic cross-sectional view of a first control and blocking piece according to an embodiment of the present invention.

[0024] Figure 2 It is a flow chart of a method for grinding a control plate according to the related art.

[0025] Figure 3 The figure is a flow chart of a method for grinding a control plate according to an embodiment of the present invention.

[0026] Figure 4 1 is a flow chart of another method for grinding a control plate according to an embodiment of the present invention.

[0027] Figure 52 is a schematic diagram of a stop interface after three grinding operations on a control plate according to an embodiment of the present invention.

[0028] Figure 6 It is a distribution diagram of defective components on a wafer after the control block is ground using a grinding method provided by relevant technology.

[0029] Figure 7 The figure is a distribution diagram of defective components of a wafer after the control block piece is ground using the grinding method provided by the present invention.

[0030] Figure 8 It is a statistical chart of the number of defects on the wafer surface after the control block piece is ground using the grinding method provided by the relevant technology.

[0031] Figure 9 The figure is a statistical diagram of the number of defects on the wafer surface after the control block piece is ground using the grinding method provided by the present invention.

[0032] Reference numerals: 11, silicon wafer; 12, damaged layer; 111, first stop position; 112, second stop position; 113, third stop position. DETAILED DESCRIPTION

[0033] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all structures.

[0034] In the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion about the concepts of the present invention. The accompanying drawings illustrate various schematic diagrams of structures according to embodiments of the present invention. These figures are not drawn to scale; certain details are exaggerated and may be omitted for clarity. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are merely exemplary and may deviate in practice due to manufacturing tolerances or technical limitations. Those skilled in the art may design regions / layers with different shapes, sizes, and relative positions based on actual needs. In the context of the present invention, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or there may be an intervening layer / element between them. Furthermore, if a layer / element is "on" another layer / element in one orientation, it may be "below" the other layer / element when the orientation is reversed.

[0035] As IC integration continues to increase, the surface of silicon wafers is required to have better flatness and cleanliness. In actual production, silicon wafers without patterns are often used to simulate real products and monitor equipment and process conditions. Such silicon wafers are called control wafers. Figure 1 As shown, after the control and blocking sheet has been used once or multiple times, a damaged layer 12 may be formed on the surface of the silicon wafer 11, making the control and blocking sheet unusable.

[0036] The wafer recycling process can reprocess damaged control blocks, allowing them to meet production needs again, thereby reducing costs. The wafer recycling process requires controlling the flatness and cleanliness of the control block surface, as well as the number of particles and defects of a certain size on the surface within the standard range.

[0037] The flatness of the surface of the control plate is mainly controlled by CMP (Chemical Mechanical Polishing). Figure 2 As shown, in related art, a two-step method is used to polish a damaged control plate. First, the entire damaged layer is removed through a first polishing step. This step is typically performed on a first polishing pad for a fixed time, using a rough polishing method. After the first rough polishing step, a fine polishing step is performed on a second polishing pad. After the fine polishing step, the control plate is cleaned to remove any particles left on the surface during the polishing process.

[0038] During the grinding process, the control block sheet is easily contaminated with particles ground from the grinding pad, grinding liquid or the wafer itself. Since the surface of the control block sheet is hydrophobic, the contact angle between the hydrophobic surface and the cleaning liquid is large. The large contact angle will cause the cleaning liquid to be unable to effectively dissolve the particles on the surface of the control block sheet, resulting in a decrease in the cleaning power of the cleaning liquid on the surface of the control block sheet, resulting in more particles and defects remaining on the surface of the control block sheet after grinding, ultimately reducing the yield of the control block sheet after wafer recovery processing.

[0039] In view of this, the present invention provides a method for grinding a control block sheet. By grinding the control block sheet with a chemical surfactant, the hydrophobic surface of the control block sheet can be converted into a hydrophilic surface, thereby making the pollutants on the surface of the control block sheet more easily contacted with the cleaning liquid and dissolved, thereby improving the yield and reliability of the control block sheet.

[0040] The grinding method of the control and blocking sheet provided by the present invention is described in detail below with reference to the accompanying drawings.

[0041] This embodiment provides a method for grinding a control plate, such as Figure 3 As shown, the grinding method includes but is not limited to steps S301 to S303.

[0042] Step S301 : performing a first grinding process on the first control and blocking piece on a first grinding pad to obtain a second control and blocking piece.

[0043] The first control and blocking piece is a control and blocking piece that is damaged after at least one use. The first control and blocking piece can be as follows: Figure 1 shown.

[0044] Specifically, after obtaining the first control block sheet, the first control block sheet can be placed on a first polishing pad in a polishing device and subjected to a first polishing process to remove the damaged layer 12 on the first control block sheet. The first control block sheet after the damaged layer is removed is the second control block sheet, and the polishing device can be a CMP device.

[0045] CMP is a precision surface treatment technology that combines chemical etching and mechanical grinding, widely used in fields such as semiconductor manufacturing and optical component processing. For control plates, their surface flatness requirements are very high, and CMP technology can ensure that the surface of the control plate reaches nanometer-level flatness.

[0046] Exemplarily, the grinding pressure during the first grinding process can be 1.5psi to 2psi, for example, the grinding pressure during the first grinding process can be 1.5psi, 1.6psi, 1.75psi, 1.9psi or 2psi, etc.; the Shore D hardness (Shore D) of the first grinding pad can be 60 to 90, for example, the Shore D hardness of the first grinding pad can be 60, 70, 75, 80 or 90, etc.

[0047] Furthermore, in order to ensure that the first grinding process can remove all the damaged layer 12, the silicon wafer 11 is subjected to a certain amount of over-grinding, that is, the grinding amount of the first grinding process is greater than the thickness of the damaged layer 12, for example, Figure 5 As shown, the end position of the first grinding process may be a first stop position 111 , and the first stop position 111 may be determined by a designer according to requirements.

[0048] For example, the first stop position 111 may be 0.1 μm below the upper surface of the silicon wafer 11, i.e., the distance between the first stop position 111 and the contact surface between the silicon wafer 11 and the damaged layer 12 is 0.1 μm. It should be understood that the first stop position 111 is the end position of the first grinding process.

[0049] Furthermore, the grinding amount of the first grinding process is positively correlated with the grinding time. If the grinding amount per minute is 1 μm and the grinding amount to be removed is 1.9 μm, the grinding time of the first grinding process is 1.9 min.

[0050] Step S302 : performing a second grinding process on the second control and blocking piece on a second grinding pad to obtain a third control and blocking piece.

[0051] The hardness of the second polishing pad is less than that of the first polishing pad. For example, the Shore hardness of the second polishing pad may be 20.

[0052] Specifically, after obtaining the second control and blocking sheet, the second control and blocking sheet is transferred to a second grinding pad and subjected to a second grinding process to remove defects on the second control and blocking sheet.

[0053] After the first grinding process, since the hardness of the first grinding pad is greater than that of the second grinding pad, under the same pressure, the mechanical stress between the control block and the first grinding pad is relatively large, resulting in cracks and defects on the surface of the silicon wafer 11. The particles and grinding liquid residues embedded in the cracks are difficult to be cleaned, so it is necessary to partially remove the surface of the silicon wafer 11 to improve the polishing effect of the control block.

[0054] Illustratively, the grinding pressure of the second grinding process may be 1.5 psi to 2 psi. For example, the grinding pressure of the second grinding process may be 1.5 psi, 1.6 psi, 1.75 psi, 1.9 psi, or 2 psi.

[0055] Step S303 , performing a third polishing process on the third control and blocking piece using a chemical surfactant on a second polishing pad to obtain a target control and blocking piece.

[0056] Specifically, after obtaining the third control and blocking sheet, the polishing liquid on the second polishing pad is replaced with a chemical surfactant, and the third control and blocking sheet is subjected to a third polishing treatment using the chemical surfactant to convert the hydrophobic surface of the third control and blocking sheet into a hydrophilic surface. The third control and blocking sheet whose surface flatness and cleanliness meet the requirements for secondary use is the target control and blocking sheet.

[0057] Exemplarily, the flow rate of the chemical surfactant can be 200 mL / min to 300 mL / min, for example, the flow rate of the chemical surfactant can be 200 mL / min, 225 mL / min, 250 mL / min, 275 mL / min, or 300 mL / min. The grinding pressure of the third grinding process can be 0.5 psi to 1 psi, for example, the grinding pressure of the third grinding process can be 0.5 psi, 0.6 psi, 0.75 psi, 0.9 psi, or 1 psi. During the third grinding process, the surface of the third control plate is subjected to less mechanical stress, and cracks are not easily propagated due to the stress during the grinding process, nor are new defects generated on the surface of the control plate due to the grinding process.

[0058] Alternatively, chemical surfactants can include polyethylene glycol or polyoxyethylene octylphenyl ether. The hydrophilic ether bonds in polyethylene glycol can couple with inorganic molecules, while the hydrophobic ends of the long carbon chains can encapsulate organic molecules, forming micelles for solubilization. The benzene ring structure in polyoxyethylene octylphenyl ether can adsorb organic pollutants, while the polyoxyethylene chains interact with water molecules to dissolve inorganic molecules. Therefore, polyethylene glycol and polyoxyethylene octylphenyl ether have a certain cleaning ability against both inorganic and organic residues.

[0059] The grinding method of the control block sheet provided in this embodiment first performs a first grinding treatment on the first control block sheet on a first grinding pad to obtain a second control block sheet, then performs a second grinding treatment on the second control block sheet on a second grinding pad to obtain a third control block sheet, and finally performs a third grinding treatment on the third control block sheet on the second grinding pad using a chemical surfactant to obtain a target control block sheet.

[0060] In this embodiment, after the first and second grinding steps, the barrier sheet undergoes a third grinding step using a chemical surfactant. The hydrophobic groups in the chemical surfactant can combine with the hydrophobic groups on the barrier sheet's surface, causing the hydrophilic groups in the chemical surfactant to face outward. This transforms the surface of the third barrier sheet from hydrophobic to hydrophilic, allowing contaminants on the third barrier sheet to more easily come into contact with and dissolve in the cleaning solution, improving the yield and reliability of the barrier sheet. Furthermore, the chemical surfactant also has a cleaning effect, helping to reduce wafer surface defects and enhance cleaning efficiency.

[0061] This embodiment also provides another method for grinding the control plate, such as Figure 4 As shown, the method includes the following steps:

[0062] Step S401 : performing a first grinding process on the first control and blocking piece on a first grinding pad to obtain a second control and blocking piece.

[0063] For details, please see Figure 3 Step S301 of the illustrated embodiment will not be described in detail here.

[0064] Step S402 : performing a second grinding process on the second control and blocking piece on a second grinding pad to obtain a third control and blocking piece.

[0065] For details, please see Figure 3 Step S302 of the illustrated embodiment will not be described in detail here.

[0066] Step S403: determining the grinding time of the third grinding process according to the grinding time of the second grinding process.

[0067] The grinding time of the second grinding process is positively correlated with the amount to be removed. The greater the amount to be removed, the longer the grinding time of the second grinding process.

[0068] The end position of the second grinding process can be determined based on the amount to be removed. For example, the end position of the second grinding process can be as follows: Figure 5 As shown in the second stop position 112 , the spacing between the first stop position 111 and the second stop position 112 may be 0.1 μm.

[0069] For example, after determining the grinding time of the second grinding process, the grinding time of the third grinding process can be determined by formula (1):

[0070] T3=0.2×T2+5 (1)

[0071] Wherein, T3 represents the grinding time of the third grinding process, T2 represents the grinding time of the second grinding process, and the unit of 5 is seconds.

[0072] For example, if the polishing time T2 of the second polishing process is 6 s, the polishing time T3 of the third polishing process is 6.2 s=0.2×6 s+5 s.

[0073] Specifically, the longer the grinding time of the second grinding process is, the more particles are accumulated on the surface of the control and blocking piece, and a longer grinding time of the third grinding process is required to improve the cleanliness of the surface of the control and blocking piece.

[0074] Exemplarily, the grinding pressure of the third grinding process can be 0.5 psi to 1 psi. For example, the grinding pressure of the third grinding process can be 0.6 psi, 0.75 psi, 0.9 psi, or 1 psi. When the grinding pressure of the third grinding process is 0.5 psi to 1 psi, since the mechanical stress between the third control plate and the second grinding pad is relatively small, the third grinding process only has the effect of flattening and cleaning the third control plate. In this case, the grinding amount of the third control plate by the third grinding process is almost zero, and the interface after the third grinding process stops at the third stop position 113, which is the end position after the third grinding process.

[0075] Step S404 , performing a third polishing process on the third control and blocking piece using a chemical surfactant on a second polishing pad to obtain a target control and blocking piece.

[0076] For details, please see Figure 3 Step S303 of the illustrated embodiment will not be described in detail here.

[0077] In this embodiment, before performing the third grinding process, the grinding time of the third grinding process is determined based on the grinding time of the second grinding process, which can avoid the increase of pollutants caused by the longer grinding time of the second grinding process and the difficulty in completely removing the pollutants remaining on the surface.

[0078] In some embodiments, after the first polishing pad performs the first polishing process on the first control and blocking piece, the polishing method of the control and blocking piece further includes: cleaning and drying the second control and blocking piece to achieve dry entry and exit of the control and blocking piece.

[0079] After the first grinding process, the surface of the second control plate is contaminated with a large amount of grinding residue (such as grinding fluid, debris on the control plate surface, etc.). Cleaning the second control plate surface can remove some of the surface residue, thereby reducing damage to the second grinding pad caused by friction between the residue on the second control plate surface and the second grinding pad during the second grinding process. The dry-in and dry-out method ensures that the surface of the second control plate remains dry during the transfer between different grinding wheels, and is not easily contaminated by dust and other particulate matter in the air, ensuring that the surface of the second control plate remains relatively clean during the grinding process.

[0080] In some embodiments, before the third control and blocking piece is subjected to a third grinding treatment using a chemical surfactant on the second grinding pad, the method for grinding the control and blocking piece further includes: using a cooling medium to perform a cooling treatment on the third control and blocking piece; at this time, the above-mentioned step S404 is specifically: using a chemical surfactant on the second grinding pad to perform a third grinding treatment on the third control and blocking piece after the cooling treatment.

[0081] The cooling process involves flushing the third control plate with a cooling medium until the temperature of the third control plate drops to a target temperature. The target temperature is a preset value that can be determined by the designer based on experience. For example, the target temperature can be 30°C or 25°C. The cooling medium can be water or other coolant with good thermal conductivity, and this invention does not impose any specific restrictions.

[0082] The process parameters of the cooling treatment include: a flow rate of the cooling medium of 10 L / min; a flushing time of the cooling medium of 20 to 40 seconds, for example, the flushing time of the cooling medium of 20 seconds, 25 seconds, 30 seconds, 35 seconds or 40 seconds.

[0083] The cooling process can reduce the temperature of the control plate and the second polishing pad (e.g., 50°C) to the target temperature, preventing the high temperature caused by polishing from affecting the performance of the chemical surfactant. In addition, the cooling medium can clean the polishing pad, reducing contamination and facilitating the next step of polishing.

[0084] In some embodiments, the first control barrier may be a single crystal silicon wafer.

[0085] In some embodiments, after the third control and blocking sheet is subjected to a third grinding process using a chemical surfactant on a second grinding pad, the method for grinding the control and blocking sheet further includes: cleaning and drying the target control and blocking sheet to achieve dry entry and exit of the control and blocking sheet. The dry entry and exit process maintains the control and blocking sheet in a dry state after the grinding process, making it less susceptible to contamination by airborne dust particles and preventing the absorption of airborne pollutants by the damp surface of the control and blocking sheet after grinding.

[0086] In semiconductor manufacturing and process analysis, the Defect Component Distribution (DCD) diagram is an important tool for visualizing the type, density, and spatial distribution of defects on the wafer surface. It generally includes the defect location, defect size, and the number of corresponding defects.

[0087] Figure 6 This is the DCD map of the wafer surface after the control block is ground using the grinding method provided by the relevant technology. Figure 7 This is a DCD diagram of the wafer surface after the control block is ground using the grinding method provided by the present invention, as shown in FIG. Figure 6 and Figure 7 As shown, dots of different colors represent particles or defects of different sizes. Figure 6 and Figure 7 It can be clearly seen that the number of surface defects on the wafer is significantly reduced after the control block sheet is ground using the grinding method provided by the present invention.

[0088] Figure 8 This is a statistical diagram of the number of defects on the wafer surface after the control block is ground using the grinding method provided by the relevant technology. Figure 9 This is a statistical diagram of the number of defects on the wafer surface after the control block sheet is ground using the grinding method provided by the present invention, wherein: Figure 8 and Figure 9 The horizontal axis is the size of the defect, and the vertical axis is the number of defects corresponding to different defect sizes. Figure 8 The total number of defects is about 250, and most of the defect sizes are around 0.05 μm; Figure 9 There are about 75 defects in total, and most of the defect sizes are around 0.05μm. Figure 8 and Figure 9 It can be seen that after the control block plate is ground using the grinding method provided by the present invention, the number of surface defects on the wafer is significantly reduced, the flatness of the wafer surface is higher, and the requirement for reusing the control block plate can be met.

[0089] The present invention also provides a grinding device for a control and blocking piece. The grinding device comprises a nozzle, a first grinding pad, and a second grinding pad.

[0090] Among them, the hardness of the second polishing pad is less than that of the first polishing pad; the first polishing pad is used to perform a first polishing process on the first control and blocking piece to obtain a second control and blocking piece; the second polishing pad is used to perform a second polishing process on the second control and blocking piece to obtain a third control and blocking piece; the third nozzle is used to provide a chemical surfactant to the second polishing pad to perform a third polishing process on the third control and blocking piece to obtain a target control and blocking piece.

[0091] Furthermore, the grinding equipment also includes a first grinding disc, a second grinding disc, a first cleaning module, a second cleaning module, and a transfer module. The first grinding disc is used to hold the first grinding pad; the second grinding disc is used to hold the second grinding pad; the first cleaning module is used to clean and dry the second control and blocking sheet that has undergone the first grinding process, thereby enabling the control and blocking sheet to be moved in and out of the first grinding pad; the second cleaning module is used to clean and cool the third control and blocking sheet that has undergone the second grinding process, and to clean and dry the target control and blocking sheet that has undergone the third grinding process, thereby enabling the control and blocking sheet to be moved in and out of the second grinding pad; and the transfer module is used to transfer the control and blocking sheet between the grinding pads.

[0092] In the description of this specification, the description with reference to the terms "this embodiment", "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0093] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0094] While the above description does not provide detailed technical details regarding patterning and etching of each layer, those skilled in the art will appreciate that various technical means can be employed to form layers, regions, and the like in desired shapes. Furthermore, those skilled in the art may devise methods that differ from those described above to form the same structure. Furthermore, while each embodiment has been described separately, this does not mean that the measures in each embodiment cannot be advantageously combined.

[0095] The above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described above, and that various obvious changes, readjustments, combinations, and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention.

[0096] Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may also include more other equivalent embodiments without departing from the concept of the present invention.

Claims

1. A method for grinding a control plate, characterized in that: The method comprises: Performing a first grinding process on the first control and blocking piece on a first grinding pad to obtain a second control and blocking piece; performing a second grinding process on the second control and blocking piece on a second grinding pad to obtain a third control and blocking piece, wherein the hardness of the second grinding pad is less than the hardness of the first grinding pad; The third control and blocking piece is subjected to a third grinding process using a chemical surfactant on the second grinding pad to obtain a target control and blocking piece.

2. The method according to claim 1, characterized in that Before the second polishing pad performs a third polishing process on the third control and blocking sheet using a chemical surfactant, the method further includes: The grinding time of the third grinding process is determined according to the grinding time of the second grinding process.

3. The method according to claim 2, characterized in that The step of determining the grinding time of the third grinding process according to the grinding time of the second grinding process includes: According to the grinding time of the second grinding process, the grinding time of the third grinding process is determined by the following formula: T3=0.2×T2+5 Wherein, T3 represents the grinding time of the third grinding process, T2 represents the grinding time of the second grinding process, and the unit of 5 is seconds.

4. The method according to any one of claims 1 to 3, characterized in that Before the second polishing pad performs a third polishing process on the third control and blocking sheet using a chemical surfactant, the method further includes: Using a cooling medium to cool the third control and blocking piece; The third control and blocking sheet is subjected to a third grinding process using a chemical surfactant on the second grinding pad, comprising: The third control and blocking piece after the cooling treatment is subjected to the third grinding treatment by using a chemical surfactant on the second grinding pad.

5. The method according to claim 4, characterized in that The flow rate of the cooling medium is 10 L / min, and the flushing time of the cooling medium ranges from 20s to 40s.

6. The method according to any one of claims 1 to 3, characterized in that The grinding pressure of the third grinding process ranges from 0.5 psi to 1 psi.

7. The method according to any one of claims 1 to 3, characterized in that The flow rate of the chemical surfactant ranges from 200 mL / min to 300 mL / min.

8. The method according to any one of claims 1 to 3, characterized in that The components of the chemical surfactant include polyethylene glycol or polyoxyethylene octylphenyl ether.

9. The method according to any one of claims 1 to 3, characterized in that The first control and blocking piece is a single crystal silicon piece.

10. A grinding device for a control plate, characterized in that: The device includes a nozzle, a first polishing pad, and a second polishing pad, wherein the hardness of the second polishing pad is less than the hardness of the first polishing pad; The first grinding pad is used to perform a first grinding process on the first control and blocking piece to obtain a second control and blocking piece; The second grinding pad is used to perform a second grinding process on the second control and blocking piece to obtain a third control and blocking piece; The nozzle is used to provide a chemical surfactant to the second polishing pad to perform a third polishing process on the third control and blocking piece to obtain a target control and blocking piece.

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