Radio frequency power amplifier and radio frequency chip

Abstract

The application relates to the field of wireless communication technology and provides a radio frequency power amplifier and a radio frequency chip, which comprise input matching circuit, first-stage amplifier, first-stage inter-amplifier matching circuit, second-stage amplifier, second-stage inter-amplifier matching circuit, third-stage amplifier and output matching circuit which are electrically connected in sequence; the radio frequency power amplifier further comprises a control module, a direct current power supply module, a first bias circuit, a second bias circuit and a third bias circuit; the first bias circuit comprises a power detection network and a switch control circuit; a first input end of the power detection network serves as a first input end of the first bias circuit, a second input end of the power detection network serves as a second input end of the first bias circuit, the power detection network is used for receiving a radio frequency signal and converting the radio frequency signal into a control voltage through a detection mode to output to an input end of the switch control circuit, and the switch control circuit is controlled to be turned on or turned off. The application can improve the robustness of power.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of wireless communication technology, and in particular to a radio frequency power amplifier and a radio frequency chip. BACKGROUND

[0002] In a wireless communication system, a radio frequency power amplifier is a key component for realizing wireless transmission of radio frequency signals. With the continuous development of mobile communication technology, especially the current large-scale popularization of 5G communication, higher requirements are put forward for the power consumption of the communication system. With the development of 5G communication, the requirements for mobile communication distance and quality are also getting higher and higher, resulting in increasing requirements for radio frequency power. With the increase of power requirements, the overall power tolerance of the radio frequency power amplifier is facing new challenges, and how to effectively improve the ruggedness of the power amplifier has become a difficult problem in the industry.

[0003] In the related art, the radio frequency power amplifier is generally connected by an input matching circuit, a first-stage amplifier (Power Amplifier, PA), a first-stage inter-stage matching circuit, a second-stage amplifier, a second-stage inter-stage matching circuit, a third-stage amplifier, an output matching circuit, a control module, a first bias circuit, a second bias circuit, a third bias circuit, and a battery power supply module in sequence. The control module receives a logic instruction and controls the battery power supply module to supply power to the first bias circuit, the second bias circuit, and the third bias circuit, respectively, and provides bias voltage for the first-stage amplifier, the second-stage amplifier, and the third-stage amplifier through the first bias circuit, the second bias circuit, and the third bias circuit, respectively.

[0004] However, the control module described above has the same structure of three bias circuits and provides the same size of bias voltage, so that the bias drive of the first-stage amplifier, the second-stage amplifier, and the third-stage amplifier is fixed, and the ruggedness of the power amplifier cannot be improved, thereby limiting the application of the power amplifier in a higher power system environment. SUMMARY

[0005] In view of the above problems of the prior art, the present application provides a radio frequency power amplifier to solve the problem of poor ruggedness of the existing radio frequency power amplifier.

[0006] To solve the above technical problems, the present application adopts the following technical solutions:

[0007] In a first aspect, the present application provides a radio frequency power amplifier, which includes an input matching circuit, a first-stage amplifier, a first-stage inter-stage matching circuit, a second-stage amplifier, a second-stage inter-stage matching circuit, a third-stage amplifier, and an output matching circuit connected in sequence; the radio frequency power amplifier further includes a control module, a direct current power supply module, a first bias circuit, a second bias circuit, and a third bias circuit.

[0008] The direct current power supply module is used for supplying power for the control module, the first-stage amplifier, the second-stage amplifier and the third-stage amplifier respectively.

[0009] The control module is used for receiving an external logic enable signal and controlling the first bias circuit, the second bias circuit and the third bias circuit to provide bias voltage for the first-stage amplifier, the second-stage amplifier and the third-stage amplifier respectively according to the external logic enable signal; a first input end of the first bias circuit is connected to the control module, a second input end of the first bias circuit is used for accessing a radio frequency signal, and an output end of the first bias circuit is connected to an input end of the first-stage amplifier.

[0010] The first bias circuit comprises a power detection network and a switch control circuit; a first input end of the power detection network serves as a first input end of the first bias circuit, a second input end of the power detection network serves as a second input end of the first bias circuit, an output end of the power detection network is connected to an input end of the switch control circuit, and an output end of the switch control circuit serves as an output end of the first bias circuit; the power detection network is used for receiving the radio frequency signal and converting the radio frequency signal into a control voltage by a detection mode to output to the input end of the switch control circuit, so as to control the switch control circuit to be turned on or turned off.

[0011] Preferably, the switch control circuit comprises a first capacitor, a first resistor, a second resistor, a third resistor, a first triode and a second triode.

[0012] A base of the second triode serves as an input end of the switch control circuit, an emitter of the second triode is grounded, a collector of the second triode is connected to a first end of the third resistor, a second end of the third resistor is connected to a base of the first triode, a collector of the first triode, a first end of the first resistor, a first end of the second resistor and a first end of the first capacitor respectively; a second end of the first resistor is used for being connected to an output end of the control module; a second end of the first capacitor and an emitter of the first triode are grounded respectively; and a second end of the second resistor serves as an output end of the switch control circuit.

[0013] Preferably, the power detection network comprises a second capacitor, a third capacitor, a fourth capacitor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a third triode, a fourth triode and a fifth triode.

[0014] The first terminal of the fourth capacitor serves as the second input terminal of the power detection network. The second terminal of the fourth capacitor is connected to the collector of the fifth transistor. The emitter of the fifth transistor is grounded. The collector of the fifth transistor is also connected to the first terminal of the ninth resistor and the base of the fifth transistor. The second terminal of the ninth resistor is connected to the first terminal of the seventh resistor and serves as the first input terminal of the power detection network. The base of the fifth transistor is connected to the first terminal of the eighth resistor. The second terminal of the eighth resistor is connected to the base of the fourth transistor. The emitter of the fourth transistor is grounded. The collector of the fourth transistor is connected to the second terminal of the seventh resistor and the base of the third transistor.

[0015] The collector of the third transistor is connected to the first terminal of the third capacitor and then to the DC power supply module. The second terminal of the third capacitor is grounded. The emitter of the third transistor is connected to the first terminal of the sixth resistor, the first terminal of the second capacitor, and the first terminal of the fifth resistor. The second terminal of the sixth resistor is connected to the second terminal of the second capacitor and then grounded. The second terminal of the fifth resistor is connected to the first terminal of the fourth resistor and serves as the output terminal of the power detection network. The second terminal of the fourth resistor is grounded.

[0016] Preferably, the second bias circuit includes a tenth resistor, a fifth capacitor, a sixth transistor, a seventh transistor, and an eighth transistor;

[0017] The first end of the tenth resistor is connected to the control module as the input terminal of the second bias circuit. The second end of the tenth resistor is connected to the collector and base of the sixth transistor. The emitter of the sixth transistor is connected to the collector and base of the seventh transistor. The emitter of the seventh transistor is grounded. The base of the sixth transistor is connected to the first end of the fifth capacitor and the base of the eighth transistor. The second end of the fifth capacitor is grounded. The collector of the eighth transistor is connected to the DC power supply module. The emitter of the seventh transistor is connected to the second stage amplifier as the output terminal of the second bias circuit.

[0018] Preferably, the third bias circuit includes an eleventh resistor, a sixth capacitor, a ninth transistor, a thirteenth transistor, and an eleventh transistor.

[0019] The first end of the eleventh resistor serves as the input terminal of the third bias circuit and is connected to the control module. The second end of the eleventh resistor is connected to the collector and base of the ninth transistor, respectively. The emitter of the ninth transistor is connected to the collector and base of the thirteenth transistor, respectively. The emitter of the thirteenth transistor is grounded. The base of the ninth transistor is connected to the first end of the sixth capacitor and the base of the eleventh transistor, respectively. The second end of the sixth capacitor is grounded. The collector of the eleventh transistor is connected to the DC power supply module. The emitter of the thirteenth transistor serves as the output terminal of the third bias circuit and is connected to the third-stage amplifier.

[0020] Preferably, the RF power amplifier further includes a first back hole, a second back hole, and a third back hole, wherein the first back hole, the second back hole, and the third back hole are connected in parallel with the first stage amplifier, the second stage amplifier, and the third stage amplifier, respectively, and then grounded.

[0021] Preferably, the input matching circuit is a seventh capacitor, with the first end of the seventh capacitor serving as the input terminal of the input matching circuit and the second end of the seventh capacitor serving as the output terminal of the input matching circuit connected to the input terminal of the first stage amplifier.

[0022] Secondly, embodiments of the present invention also provide a radio frequency chip, including the radio frequency power amplifier as described above.

[0023] Compared with related technologies, in the embodiments of the present invention, a DC power supply module is used to supply power to the control module, the first-stage amplifier, the second-stage amplifier, and the third-stage amplifier respectively; the control module is used to receive an external logic enable signal and control the first bias circuit, the second bias circuit, and the third bias circuit to provide bias voltages to the first-stage amplifier, the second-stage amplifier, and the third-stage amplifier respectively according to the external logic enable signal; the first bias circuit includes a power detection network and a switch control circuit; the first input terminal of the power detection network serves as the first input terminal of the first bias circuit, the second input terminal of the power detection network serves as the second input terminal of the first bias circuit, the output terminal of the power detection network is connected to the input terminal of the switch control circuit, and the output terminal of the switch control circuit serves as the output terminal of the first bias circuit; the power detection network is used to receive radio frequency signals and convert them into control voltages through detection, which are then output to the input terminal of the switch control circuit to control the switch control circuit to turn on or off; by using the power detection network to convert the voltage of the first-stage amplifier through detection to control the turn-on or turn-off of the switch control circuit, an adjustable bias voltage is provided to the first-stage amplifier, which can improve the robustness of the power amplifier and thus allow it to be applied to higher power system environments. Attached Figure Description

[0024] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0025] Figure 1 A circuit block diagram of a radio frequency power amplifier provided in an embodiment of the present invention;

[0026] Figure 2 A circuit diagram of the first bias circuit of the radio frequency power amplifier provided in an embodiment of the present invention;

[0027] Figure 3 A circuit diagram of the second bias circuit of the radio frequency power amplifier provided in an embodiment of the present invention;

[0028] Figure 4 A circuit diagram of the third bias circuit of the radio frequency power amplifier provided in an embodiment of the present invention;

[0029] Figure 5 The power simulation curves for existing RF power amplifiers;

[0030] Figure 6 A power simulation curve of the radio frequency power amplifier provided in an embodiment of the present invention;

[0031] Figure 7 The voltage and power simulation curves of the radio frequency power amplifier provided for the embodiments of the present invention are shown.

[0032] Among them, 100 is an RF power amplifier, 1 is an input matching circuit, 2 is a first-stage amplifier, 3 is an inter-stage matching circuit, 4 is a second-stage amplifier, 5 is an inter-stage matching circuit, 6 is a third-stage amplifier, 7 is an output matching circuit, 8 is a control module, 9 is a DC power supply module, 10 is a first bias circuit, 101 is a power detection network, 102 is a switch control circuit, 11 is a second bias circuit, 12 is a third bias circuit, 13 is a first back hole, 14 is a second back hole, and 15 is a third back hole. Detailed Implementation

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application, are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0034] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0035] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0036] Example 1

[0037] Please see Figures 1-4 As shown, this embodiment of the invention provides a radio frequency (RF) power amplifier 100, including an input matching circuit 1, a first-stage amplifier 2, a first-stage inter-stage matching circuit 3, a second-stage amplifier 4, a second-stage inter-stage matching circuit 5, a third-stage amplifier 6, and an output matching circuit 7, which are connected in sequence. The input matching circuit 1 is used to receive RF signals, and the output matching circuit 7 is used to output RF signals. The RF power amplifier 100 also includes a control module 8, a DC power supply module 9, a first bias circuit 10, a second bias circuit 11, and a third bias circuit 12. The DC power supply module 9 is powered by a battery and outputs a DC voltage.

[0038] The DC power supply module 9 is used to supply power to the control module 8, the first stage amplifier 2, the second stage amplifier 4 and the third stage amplifier 6 respectively.

[0039] The control module 8 receives an external logic enable signal and controls the first bias circuit 10, the second bias circuit 11, and the third bias circuit 12 to provide bias voltages to the first stage amplifier 2, the second stage amplifier 4, and the third stage amplifier 6, respectively, according to the external logic enable signal. The first input terminal of the first bias circuit 10 is connected to the control module 8, the second input terminal of the first bias circuit 10 is used to receive radio frequency signals, and the output terminal of the first bias circuit 10 is connected to the input terminal of the first stage amplifier 2.

[0040] The first bias circuit 10 includes a power detection network 101 and a switch control circuit 102. The input terminal of the power detection network 101 serves as the first input terminal of the first bias circuit 10, and the second input terminal of the power detection network 101 serves as the second input terminal of the first bias circuit 10. The output terminal of the power detection network 101 is connected to the input terminal of the switch control circuit 102, and the output terminal of the switch control circuit 102 serves as the output terminal of the first bias circuit 10. The power detection network 101 receives the radio frequency signal and converts it into a control voltage via detection, outputting it to the input terminal of the switch control circuit 102 to control the switch control circuit 102 to turn it on or off. By using the power detection network 101 to convert the detection voltage of the first-stage amplifier 2 to control the switching control circuit 102 to turn it on or off, an adjustable bias voltage is provided to the first-stage amplifier 2, improving the robustness of the radio frequency power amplifier 100 and enabling its application in higher power system environments. Robustness refers to its reliability and stability under specific conditions, mainly measuring whether it can work normally without damage under mismatch or abnormal operating conditions.

[0041] In this embodiment, the switch control circuit 102 includes a first capacitor C1, a first resistor R1, a second resistor R2, a third resistor R3, a first transistor Q1, and a second transistor Q2.

[0042] The base of the second transistor Q2 serves as the input terminal of the switch control circuit 102. The emitter of the second transistor Q2 is grounded, and the collector of the second transistor Q2 is connected to the first terminal of the third resistor R3. The second terminal of the third resistor R3 is connected to the base of the first transistor Q1, the collector of the first transistor Q1, the first terminal of the first resistor R1, the first terminal of the second resistor R2, and the first terminal of the first capacitor C1. The second terminal of the first resistor R1 is connected to the output terminal of the control module 8; the second terminal of the first capacitor C1 and the emitter of the first transistor Q1 are both grounded. The second terminal of the second resistor R2 serves as the output terminal of the switch control circuit 102. A new bias circuit can be formed by the first transistor Q1, the first capacitor C1, the first resistor R1, and the second resistor R2 to provide bias power to the first-stage amplifier 2. The second transistor Q2 and the third resistor R3 can perform a switching function. When the base of the second transistor Q2 receives a high level output from the power detection network 101, the collector and emitter of the second transistor Q2 are turned on, pulling down the node bias voltage of the first transistor Q1, thereby causing the RF power amplifier 100 to stop working.

[0043] In this embodiment, the power detection network 101 includes: a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a third transistor Q3, a fourth transistor Q4, and a fifth transistor Q5.

[0044] The first terminal of the fourth capacitor C4 serves as the second input terminal of the power detection network 101. The second terminal of the fourth capacitor C4 is connected to the collector of the fifth transistor Q5. The emitter of the fifth transistor Q5 is grounded. The collector of the fifth transistor Q5 is also connected to the first terminal of the ninth resistor R9 and the base of the fifth transistor Q5. The second terminal of the ninth resistor R9 is connected to the first terminal of the seventh resistor R7 and serves as the first input terminal of the power detection network 101. The base of the fifth transistor Q5 is connected to the first terminal of the eighth resistor R8. The second terminal of the eighth resistor R8 is connected to the base of the fourth transistor Q4. The emitter of the fourth transistor Q4 is grounded. The collector of the fourth transistor Q4 is connected to the second terminal of the seventh resistor R7 and the base of the third transistor Q3. The first input terminal of the power detection network 101 is used to connect to the control module 8.

[0045] The collector of the third transistor Q3 is connected to the first terminal of the third capacitor C3 and then to the DC power supply module 9. The second terminal of the third capacitor C3 is grounded. The emitter of the third transistor Q3 is connected to the first terminal of the sixth resistor R6, the first terminal of the second capacitor C2, and the first terminal of the fifth resistor R5. The second terminal of the sixth resistor R6 is connected to the second terminal of the second capacitor C2 and then grounded. The second terminal of the fifth resistor R5 is connected to the first terminal of the fourth resistor R4 and serves as the output terminal of the power detection network 101. The second terminal of the fourth resistor R4 is grounded.

[0046] Specifically, the first terminal of the fourth capacitor C4 is used to receive the radio frequency signal output by the input matching circuit 1. When the radio frequency signal is too large, it is converted into a voltage through detection and output voltage from the fourth resistor R4 node to control the switching of the second transistor Q2 to turn on and off, thereby achieving the purpose of controlling the operation and shutdown of the power amplifier.

[0047] The fourth capacitor C4 is connected in parallel with the output of the RF input port and the input matching circuit 1, serving as a DC blocking and coupling capacitor to couple the signal. Rectification is performed by the fifth transistor Q5, and the ninth resistor R9 acts as a bias control resistor for the fifth transistor Q5, controlling the ballast magnitude. The eighth resistor R8 acts as a base bias resistor for the fourth transistor Q4, controlling its amplification effect. The seventh resistor R7 also acts as a collector voltage control resistor for the fourth transistor Q4, controlling its output voltage. The voltage after ballasting by the fifth transistor Q5 is received by the fourth transistor Q4, amplified, and then sent to the third transistor Q3. The third transistor Q3 can act as an emitter follower in the detector, outputting a voltage from the transmitter. When the third transistor Q3 is used as an emitter follower in the detector, it can indeed output a detected signal from the emitter. Its core functions are impedance transformation and signal buffering, while maintaining a voltage gain close to 1. The second capacitor C2 and the sixth resistor R6 form a low-pass filter network to filter the RF signal output from the emitter of the third transistor Q3. The fourth resistor R4 and the fifth resistor R5 act as a voltage divider for the detector voltage, allowing for voltage adjustment. Different voltage levels control the second transistor Q2 to turn on or off, thus achieving a switching function.

[0048] In this embodiment, the second bias circuit 11 includes a tenth resistor R10, a fifth capacitor C5, a sixth transistor Q6, a seventh transistor Q7, and an eighth transistor Q8.

[0049] The first end of the tenth resistor R10 serves as the input terminal of the second bias circuit 11 and is connected to the control module 8. The second end of the tenth resistor R10 is connected to the collector and base of the sixth transistor Q6. The emitter of the sixth transistor Q6 is connected to the collector and base of the seventh transistor Q7, and the emitter of the seventh transistor Q7 is grounded. The base of the sixth transistor Q6 is connected to the first end of the fifth capacitor C5 and the base of the eighth transistor Q8, and the second end of the fifth capacitor C5 is grounded. The collector of the eighth transistor Q8 is connected to the DC power supply module 9. The emitter of the seventh transistor Q7 serves as the output terminal of the second bias circuit 11 and is connected to the second stage amplifier 4. By shorting the base and collector of the third transistor Q3 and the seventh transistor Q7, a diode is formed for ballast, which is controlled by the control module 8. The eighth transistor, Q8, serves as the bias drive stage of the power amplifier and is primarily powered by the battery in the DC power supply module 9. The fifth capacitor, C5, can be used as a linearization capacitor to improve linearity.

[0050] In this embodiment, the third bias circuit 12 includes an eleventh resistor R11, a sixth capacitor C6, a ninth transistor Q9, a thirteenth transistor Q10, and an eleventh transistor Q11.

[0051] The first end of the eleventh resistor R11 serves as the input terminal of the third bias circuit 12 and is connected to the control module 8. The second end of the eleventh resistor R11 is connected to the collector and base of the ninth transistor Q9. The emitter of the ninth transistor Q9 is connected to the collector and base of the thirteenth transistor Q10, and the emitter of the thirteenth transistor Q10 is grounded. The base of the ninth transistor Q9 is connected to the first end of the sixth capacitor C6 and the base of the eleventh transistor Q11, and the second end of the sixth capacitor C6 is grounded. The collector of the eleventh transistor Q11 is connected to the DC power supply module 9, and the emitter of the thirteenth transistor Q10 serves as the output terminal of the third bias circuit 12 and is connected to the third-stage amplifier 6. By shorting the base and collector of the ninth transistor Q9 and the thirteenth transistor Q10, a diode is formed for ballast, and the power supply is controlled by the control module 8. The eleventh transistor, Q11, serves as the bias drive stage of the power amplifier and is primarily powered by the battery in the DC power supply module 9. The sixth capacitor, C6, can be used as a linearization capacitor to improve linearity.

[0052] In this embodiment, the RF power amplifier 100 further includes a first back port 13, a second back port 14, and a third back port 15. The first back port 13, the second back port 14, and the third back port 15 are connected in parallel with the first stage amplifier 2, the second stage amplifier 4, and the third stage amplifier 6, respectively, and then grounded. By connecting the first back port 13, the second back port 14, and the third back port 15 in parallel with the first stage amplifier 2, the second stage amplifier 4, and the third stage amplifier 6, respectively, and then grounding them, the overall performance of the PA is improved through synergistic optimization of five dimensions: signal integrity, heat dissipation, grounding, matching, and power supply.

[0053] In this embodiment, the input matching circuit 1 is a seventh capacitor C7. The first terminal of the seventh capacitor C7 serves as the input terminal of the input matching circuit 1, used to connect to the radio frequency signal. The second terminal of the seventh capacitor C7 serves as the output terminal of the input matching circuit 1, connected to the input terminal of the first stage amplifier 2. The seventh capacitor C7 achieves the effect of input impedance matching. The first terminal of the fourth capacitor C4 is connected to the first terminal of the seventh capacitor C7.

[0054] In this embodiment, the output matching circuit 7 can be an inductor or a capacitor, or a combination of an inductor and a capacitor connected in series, or a combination of an inductor and a capacitor connected in parallel, etc.

[0055] In this embodiment,Figure 5 The graph shows the power simulation curves for the existing architecture. The horizontal axis represents the input power, and the vertical axis represents the output power. As can be seen from the graph, the saturation power of the power amplifier is 35 dBm. However, the saturation power is in the nonlinear region, which is typically not within the normal operating range of the power amplifier. Furthermore, the power compression is severe here, posing a risk to the robustness of the power amplifier.

[0056] Figure 6 The power simulation curve for this invention shows the horizontal axis as the RF input power and the vertical axis as the output power of the power amplifier. It is clearly visible that power attenuation is significant at 34.5dBm or above -3dBm. Figure 7 As shown, Figure 7 The graph shows the voltage output from the node with fourth resistor R4 to the second transistor Q2 as a function of power. The horizontal axis represents the RF input power, and the vertical axis represents the output voltage of the detector network. As the input power increases, the output voltage of the detector network also increases. Since the turn-on voltage of the second transistor Q2 is around 1.2V, exceeding this threshold causes Q2 to turn on, thereby lowering the bias voltage at the node with first transistor Q1 and turning off the first-stage power amplifier. This effectively improves the robustness of the power amplifier.

[0057] Example 2

[0058] This invention also provides an RF chip, including the RF power amplifier 100 as described above.

[0059] It should be noted that the various embodiments described above with reference to the accompanying drawings are merely illustrative of the present invention and not intended to limit its scope. Those skilled in the art should understand that any modifications or equivalent substitutions made to the present invention without departing from its spirit and scope should be included within the scope of the present invention. Furthermore, unless the context otherwise requires, words appearing in the singular include those in the plural, and vice versa. Additionally, unless specifically stated otherwise, all or part of any embodiment may be used in conjunction with all or part of any other embodiment.

Claims

1. A radio frequency power amplifier, comprising an input matching circuit, a first-stage amplifier, an inter-stage matching circuit, a second-stage amplifier, an inter-stage matching circuit, a third-stage amplifier, and an output matching circuit connected in sequence; characterized in that, The radio frequency power amplifier also includes a control module, a DC power supply module, a first bias circuit, a second bias circuit, and a third bias circuit. The DC power supply module is used to supply power to the control module, the first stage amplifier, the second stage amplifier and the third stage amplifier respectively; The control module is used to receive an external logic enable signal and control the first bias circuit, the second bias circuit and the third bias circuit to provide bias voltages to the first stage amplifier, the second stage amplifier and the third stage amplifier respectively according to the external logic enable signal; the first input terminal of the first bias circuit is connected to the control module, the second input terminal of the first bias circuit is used to receive radio frequency signals, and the output terminal of the first bias circuit is connected to the input terminal of the first stage amplifier. The first bias circuit includes a power detection network and a switch control circuit; the first input terminal of the power detection network serves as the first input terminal of the first bias circuit, the second input terminal of the power detection network serves as the second input terminal of the first bias circuit, the output terminal of the power detection network is connected to the input terminal of the switch control circuit, and the output terminal of the switch control circuit serves as the output terminal of the first bias circuit; the power detection network is used to receive the radio frequency signal and convert it into a control voltage through detection, which is then output to the input terminal of the switch control circuit to control the switch control circuit to be turned on or off; The switch control circuit includes a first capacitor, a first resistor, a second resistor, a third resistor, a first transistor, and a second transistor; The base of the second transistor serves as the input terminal of the switch control circuit. The emitter of the second transistor is grounded. The collector of the second transistor is connected to the first terminal of the third resistor. The second terminal of the third resistor is connected to the base of the first transistor, the collector of the first transistor, the first terminal of the first resistor, the first terminal of the second resistor, and the first terminal of the first capacitor. The second terminal of the first resistor is used to connect to the output terminal of the control module. The second terminal of the first capacitor and the emitter of the first transistor are both grounded. The second terminal of the second resistor serves as the output terminal of the switch control circuit.

2. The radio frequency power amplifier according to claim 1, characterized in that, The power detection network includes: a second capacitor, a third capacitor, a fourth capacitor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a third transistor, a fourth transistor, and a fifth transistor; The first terminal of the fourth capacitor serves as the second input terminal of the power detection network. The second terminal of the fourth capacitor is connected to the collector of the fifth transistor. The emitter of the fifth transistor is grounded. The collector of the fifth transistor is also connected to the first terminal of the ninth resistor and the base of the fifth transistor. The second terminal of the ninth resistor is connected to the first terminal of the seventh resistor and serves as the first input terminal of the power detection network. The base of the fifth transistor is connected to the first terminal of the eighth resistor. The second terminal of the eighth resistor is connected to the base of the fourth transistor. The emitter of the fourth transistor is grounded. The collector of the fourth transistor is connected to the second terminal of the seventh resistor and the base of the third transistor. The collector of the third transistor is connected to the first terminal of the third capacitor and then to the DC power supply module. The second terminal of the third capacitor is grounded. The emitter of the third transistor is connected to the first terminal of the sixth resistor, the first terminal of the second capacitor, and the first terminal of the fifth resistor. The second terminal of the sixth resistor is connected to the second terminal of the second capacitor and then grounded. The second terminal of the fifth resistor is connected to the first terminal of the fourth resistor and serves as the output terminal of the power detection network. The second terminal of the fourth resistor is grounded.

3. The radio frequency power amplifier according to claim 1, characterized in that, The second bias circuit includes a tenth resistor, a fifth capacitor, a sixth transistor, a seventh transistor, and an eighth transistor; The first end of the tenth resistor is connected to the control module as the input terminal of the second bias circuit. The second end of the tenth resistor is connected to the collector and base of the sixth transistor. The emitter of the sixth transistor is connected to the collector and base of the seventh transistor. The emitter of the seventh transistor is grounded. The base of the sixth transistor is connected to the first end of the fifth capacitor and the base of the eighth transistor. The second end of the fifth capacitor is grounded. The collector of the eighth transistor is connected to the DC power supply module. The emitter of the seventh transistor is connected to the second stage amplifier as the output terminal of the second bias circuit.

4. The radio frequency power amplifier according to claim 1, characterized in that, The third bias circuit includes an eleventh resistor, a sixth capacitor, a ninth transistor, a thirteenth transistor, and an eleventh transistor. The first end of the eleventh resistor serves as the input terminal of the third bias circuit and is connected to the control module. The second end of the eleventh resistor is connected to the collector and base of the ninth transistor, respectively. The emitter of the ninth transistor is connected to the collector and base of the thirteenth transistor, respectively. The emitter of the thirteenth transistor is grounded. The base of the ninth transistor is connected to the first end of the sixth capacitor and the base of the eleventh transistor, respectively. The second end of the sixth capacitor is grounded. The collector of the eleventh transistor is connected to the DC power supply module. The emitter of the thirteenth transistor serves as the output terminal of the third bias circuit and is connected to the third-stage amplifier.

5. The radio frequency power amplifier according to claim 1, characterized in that, The radio frequency power amplifier further includes a first back hole, a second back hole, and a third back hole, wherein the first back hole, the second back hole, and the third back hole are connected in parallel with the first stage amplifier, the second stage amplifier, and the third stage amplifier, respectively, and then grounded.

6. The radio frequency power amplifier according to claim 1, characterized in that, The input matching circuit is a seventh capacitor. The first end of the seventh capacitor serves as the input terminal of the input matching circuit, and the second end of the seventh capacitor serves as the output terminal of the input matching circuit, which is connected to the input terminal of the first stage amplifier.

7. A radio frequency chip, characterized in that, Including the radio frequency power amplifier as described in any one of claims 1-6.

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