Method and system for generating three-dimensional pseudo-profiles of resistivity data based on pseudo-positions

Abstract

The application discloses a kind of resistivity data three-dimensional pseudo profile generation method and system based on pseudo position, method includes: according to the preset array filtering strategy, the multiple four-electrode arrays are preprocessed, and target four-electrode array is obtained;According to the geometric configuration and measurement value of each target four-electrode array, the target sensitivity average position of each target four-electrode array under the preset infinite uniform half-space model is calculated, and each target sensitivity average position is defined as the target pseudo position of the corresponding target four-electrode array;Based on the target pseudo position and apparent resistivity value of target four-electrode array, three-dimensional pseudo profile is drawn through three-dimensional scatter diagram or interpolation contour map.Effectively eliminates the array close to zero coupling that will cause invalid calculation result, and the generated pseudo profile can reliably reproduce the main features of underground structure, such as stratified interface, vertical direct contact surface and local anomaly body.

Description

Technical Field

[0001] This invention belongs to the field of resistivity imaging technology in geophysical exploration, and particularly relates to a method and system for generating three-dimensional pseudo-profiles of resistivity data based on pseudo-location. Background Technology

[0002] In resistivity exploration, pseudo-profiles are an important tool for rapid data visualization and preliminary interpretation of two-dimensional (2D) measurements. Practitioners can intuitively assess the quality of data fitting by comparing pseudo-profiles from field measurements with those calculated by inversion models. For three-dimensional (3D) measurements, where the computational burden of data inversion is extremely heavy, rapidly generated and interpretable pseudo-profiles will have extremely high practical value.

[0003] In existing techniques, analytical formulas for the sensitivity averaging position based on an infinite uniform half-space model are typically used to calculate the plotting points (pseudo-positions) of pseudo-profiles. Butler's (2016, 2017) research indicates that this position can serve as a pseudo-depth for resistivity measurements. For collinear arrays, they can be classified as α-type (CPPC or PCCP), β-type (CCPP or PPCC), and γ-type (CPCP or PCPC). α-type and β-type arrays can produce interpretable pseudo-profiles using the averaging position formula, while γ-type arrays produce some false and unreliable pseudo-positions.

[0004] These spurious results occur when the array approaches a "zero array," i.e., in an array configuration where the potential difference between the potential electrodes is zero in an infinitely uniform half-space. At this point, the geometric factor tends to infinity, making the calculation of apparent resistivity and spurious positions extremely sensitive to minute errors in electrode position or numerical calculation deviations, thus producing invalid results.

[0005] Therefore, the existing technology has the following defects: when directly applying the formula of the uniform half-space model to calculate the pseudo position of all types of arrays, a large number of outliers caused by the near-zero coupling state will be mixed in, which will cause the generated 3D pseudo profile to fail to reliably reflect the underground structural characteristics and lose the significance of rapid preliminary interpretation. Summary of the Invention

[0006] This invention provides a method and system for generating three-dimensional pseudo-profiles based on resistivity data with pseudo-locations. It addresses the technical problem that the generated 3D pseudo-profiles cannot reliably reflect the characteristics of underground structures due to the inclusion of a large number of outliers caused by near-zero coupling states, thus losing their significance for rapid preliminary interpretation.

[0007] In a first aspect, the present invention provides a method for generating a three-dimensional pseudo-profile based on resistivity data using pseudo-location, comprising:

[0008] Obtain the geometric configuration and measurement values ​​of multiple four-electrode arrays obtained through three-dimensional resistivity measurement;

[0009] The multiple four-electrode arrays are preprocessed according to a preset array filtering strategy to obtain a target four-electrode array. The array filtering strategy is to retain four-electrode arrays that satisfy both the shortest electrode distance and the second shortest electrode distance involve all four electrodes.

[0010] Calculate the theoretical potential difference and gradient of each four-electrode array in a uniform half-space, and move the electrode position by a preset step size along the gradient direction. If the sign of the potential difference reverses before and after the movement, the four-electrode array is determined to be close to zero coupling and is excluded.

[0011] Based on the geometric configuration and measurement values ​​of each target four-electrode array, the average position of the target sensitivity of each target four-electrode array under the preset infinite uniform half-space model is calculated, and the average position of the target sensitivity of each target is defined as the target pseudo position of the corresponding target four-electrode array.

[0012] Based on the target pseudo-position and apparent resistivity value of the target four-electrode array, a three-dimensional pseudo-section is drawn using a three-dimensional scatter plot or interpolated contour plot.

[0013] Secondly, the present invention provides a three-dimensional pseudo-profile generation system for resistivity data based on pseudo-location, comprising:

[0014] The acquisition module is configured to acquire the geometric configuration and measurement values ​​of multiple four-electrode arrays obtained through three-dimensional resistivity measurement;

[0015] The processing module is configured to preprocess the plurality of four-electrode arrays according to a preset array filtering strategy to obtain a target four-electrode array, wherein the array filtering strategy is: retaining four-electrode arrays that satisfy both the shortest electrode distance and the second shortest electrode distance involve all four electrodes.

[0016] Calculate the theoretical potential difference and gradient of each four-electrode array in a uniform half-space, and move the electrode position by a preset step size along the gradient direction. If the sign of the potential difference reverses before and after the movement, the four-electrode array is determined to be close to zero coupling and is excluded.

[0017] The calculation module is configured to calculate the average position of the target sensitivity of each target four-electrode array under a preset infinite uniform half-space model based on the geometric configuration and measurement values ​​of each target four-electrode array, and define the average position of each target sensitivity as the target pseudo position of the corresponding target four-electrode array.

[0018] The generation module is configured to draw a three-dimensional pseudo-section based on the target pseudo-position and apparent resistivity value of the target four-electrode array, using a three-dimensional scatter plot or interpolated contour plot.

[0019] Thirdly, an electronic device is provided, comprising: at least one processor, and a memory communicatively connected to the at least one processor, wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the steps of the method for generating three-dimensional pseudo-profiles of resistivity data based on pseudo-positions according to any embodiment of the present invention.

[0020] Fourthly, the present invention also provides a computer-readable storage medium having a computer program stored thereon, wherein when the program instructions are executed by a processor, the processor performs the steps of the method for generating a three-dimensional pseudo-profile of resistivity data based on pseudo-position according to any embodiment of the present invention.

[0021] The method and system for generating three-dimensional pseudo-profiles based on resistivity data in this application retains the use of four-electrode arrays where both the shortest and second-shortest electrode distances involve all four electrodes, and calculates the theoretical potential difference and gradient of each four-electrode array in a uniform half-space, moving the electrode positions by a preset step size along the gradient direction. If the sign of the potential difference reverses before and after the movement, the four-electrode array is determined to be close to zero coupling and is excluded. This effectively eliminates arrays that are close to zero coupling, which would invalidate the calculation results. The generated pseudo-profile can reliably reproduce the main features of the underground structure, such as layered interfaces, vertical contact surfaces, and local anomalies. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 A flowchart illustrating a method for generating a three-dimensional pseudo-profile based on resistivity data according to a pseudo-position, as provided in an embodiment of the present invention;

[0024] Figure 2 An example diagram of an array that is too close to zero is provided as an embodiment of the present invention.

[0025] Figure 3 A specific embodiment of the present invention provides a three-dimensional pseudo-profile scatter plot drawn based on 5×5 grid field data;

[0026] Figure 4 A schematic cross-sectional view of an inverted slice of field data is provided as an embodiment of the present invention.

[0027] Figure 5 The diagram shows a structural block diagram of a three-dimensional pseudo-profile generation system for resistivity data based on pseudo-position, according to an embodiment of the present invention.

[0028] Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0030] Please see Figure 1 The diagram shows a flowchart of a method for generating three-dimensional pseudo-profiles based on resistivity data according to pseudo-location, as described in this application.

[0031] like Figure 1 As shown, the method for generating three-dimensional pseudo-profiles based on resistivity data from pseudo-locations specifically includes the following steps:

[0032] Step S101: Obtain the geometric configuration and measurement values ​​of multiple four-electrode arrays obtained through three-dimensional resistivity measurement.

[0033] In this step, the geometric configuration and electrical measurement values ​​of multiple four-electrode arrays obtained through three-dimensional resistivity measurement are acquired. The electrical measurement values ​​include the injection current value and the measured potential difference.

[0034] Step S102: Preprocess the multiple four-electrode arrays according to a preset array filtering strategy to obtain the target four-electrode array.

[0035] In this step, the array filtering strategy is to retain four-electrode arrays that satisfy both the shortest electrode distance and the second shortest electrode distance involve all four electrodes.

[0036] In one specific embodiment, if the shortest distance is the distance between electrode A and electrode M... Then the second shortest distance must be the distance between electrode B and electrode N. Or if the shortest distance is the distance between electrode A and electrode M. Therefore, the second shortest distance must be the distance between electrode B and electrode M. This ensures that all four electrodes are contained within the two shortest distances.

[0037] Calculate the theoretical potential difference and gradient of each four-electrode array in a uniform half-space, and move the electrode position by a preset step size along the gradient direction. If the sign of the potential difference reverses before and after the movement, the four-electrode array is determined to be close to zero coupling and is excluded.

[0038] It should be noted that the expression for calculating the theoretical potential difference of each four-electrode array in a uniform half-space is as follows:

[0039] ,

[0040] In the formula, The potential between electrodes M and N when electrodes A and B are powered. For current, For resistance, The distance between electrode A and electrode M. The distance between electrode A and electrode M. The distance between electrode B and electrode M. This is the distance between the B electrode and the N electrode;

[0041] The expression for calculating the gradient of each four-electrode array in the uniform half-space is as follows:

[0042] ,

[0043] ,

[0044] In the formula, This represents the potential gradient between electrodes M and N in a uniform half-space when electrodes A and B are powered. for The partial derivative in the x-direction of electrode A, The potential between electrodes M and N is... Let A be the x-coordinate of electrode A. Let M be the abscissa of electrode M. The x-axis represents the N-electrode. Let B be the x-coordinate of electrode B. Let be the ordinate of electrode A. Let M be the ordinate of electrode M. The ordinate of the N electrode is denoted by . The vertical coordinate of electrode B is given.

[0045] In one specific embodiment, for collinear arrays, zero-value arrays can be easily avoided simply by using α-type and β-type electrode arrays. While this method eliminates about one-third of the possible measurements, this usually doesn't pose a significant problem when the number of electrodes is large, given the extremely large amount of total measurement data. For three-dimensional arrays, identifying near-zero-value arrays is more complex because it's not possible to simply classify the arrays as α-type, β-type, or γ-type. A simple strategy is to retain only data arrays that satisfy the minimum two current-potential electrode spacing containing all four electrodes. For example, if the minimum current-potential spacing is... Then only retain those that satisfy the condition. This is an array with the second smallest pitch. It's worth noting that when using this strategy, the two largest terms on the right-hand side of the theoretical potential difference expression are either both positive or both negative, meaning the potential will not approach zero, and therefore the array will not approach zero either. This strategy primarily identifies three-dimensional arrays that resemble collinear α arrays in appearance; we call these 3D α arrays. However, it should be noted that two-dimensional α arrays are excluded by this strategy. Typically, this strategy retains about 30% of the possible arrays. The only exception is when... = = = In cases where the electrodes are arranged in a square and the potential electrodes are diagonally opposite the current electrodes, this strategy will fail. This situation is completely empty and can be easily removed by rejecting arrays with infinite geometric factors.

[0046] Another method for identifying near-zero-coupling arrays is based on the property that for such arrays, small changes in electrode position will cause a change in the sign of the potential measured under homogeneous grounding conditions. To determine the nearest zero-crossing points, the electrode positions are first calculated ( , ), ( , ), ( , ), ( , The theoretical potential difference at point (). The gradient value relative to the electrode positions indicates which small changes in electrode positions, given a total electrode displacement, will cause the largest potential change. This gradient can be expressed as:

[0047]

[0048] Subsequently, by selecting By calculating the step size in the direction of rapid approach to zero, a new set of electrode positions is obtained. This new set of positions (marked with apostrophes) is given by the following formula:

[0049] ,

[0050] In the formula, This represents the potential gradient between electrodes M and N in a uniform half-space when electrodes A and M are powered. Let be the absolute value of the potential gradient between electrodes M and N in a uniform half-space when electrodes A and B are powered. This indicates whether the potential between electrodes M and N is greater than 0 when electrodes A and B are powered. If it is greater than 0, the output value is 1; otherwise, the output value is 0.

[0051] If here > 0, then Return 1; if <0, Return -1. Step size It is a free parameter.

[0052] like and If the sign is opposite, then the position of the coordinate point is determined. Array data with values ​​close to zero will be excluded from the pseudo-profile dataset. Through repeated experiments, it was found that when... Using half the typical electrode spacing effectively eliminates outliers while retaining most of the high-quality data. Compared to using the 3Dα criterion, this method allows us to retain more valid data.

[0053] Furthermore, especially when the electrodes are arranged in a perfect grid, some arrays will have zero values. To eliminate these cases, an additional criterion is simply added: arrays with infinite geometric factors are rejected.

[0054] Figure 2 This example demonstrates an array that was rejected because its value was too close to zero. In this case, the original array had negative potentials, while the shifted array had positive potentials. There exists a zero-value array with electrode positions between the red and blue symbols. This latter type of data filter is called a zero-value elimination filter.

[0055] Step S103: Based on the geometric configuration and measurement values ​​of each target four-electrode array, calculate the average position of the target sensitivity of each target four-electrode array under the preset infinite uniform half-space model, and define the average position of the target sensitivity of each target as the target pseudo position of the corresponding target four-electrode array.

[0056] In this step, the expression for calculating the average sensitivity position of each four-electrode array under the preset infinite uniform half-space model is as follows:

[0057] ,

[0058] ,

[0059] ,

[0060] ,

[0061] In the formula, Let x be the x-coordinate of the four-electrode array in a pre-defined infinite uniform half-space model. Let y be the y-coordinate of the four-electrode array in a pre-defined infinite uniform half-space model. Let z be the z-coordinate of the four-electrode array in a pre-defined infinite uniform half-space model. Geometric factor Let A be the x-coordinate of electrode A. Let M be the abscissa of electrode M. The x-axis represents the N-electrode. Let B be the x-coordinate of electrode B. Let be the ordinate of electrode A. Let M be the ordinate of electrode M. The ordinate of the N electrode is denoted by . Let be the ordinate of electrode B. The distance between electrode A and electrode M. The distance between electrode A and electrode M. The distance between electrode B and electrode M. This represents the distance between the B electrode and the N electrode.

[0062] Step S104: Based on the target pseudo-position and apparent resistivity value of the target four-electrode array, a three-dimensional pseudo-section is drawn using a three-dimensional scatter plot or interpolated contour plot.

[0063] In this step, the target pseudo-position of the target four-electrode array is used as a spatial coordinate point; the apparent resistivity value corresponding to the target four-electrode array is visualized by color or size mapping; and a continuous resistivity distribution map is generated using an interpolation algorithm or a three-dimensional scatter plot is directly drawn.

[0064] The expression for calculating the apparent resistivity is as follows: , Apparent resistivity Geometric factor For potential difference, This is the supply current.

[0065] In summary, the method of this application can achieve the following technical effects:

[0066] Computationally efficient: This invention makes full use of the mature analytical formula for uniform half-space, resulting in extremely low computational cost and avoiding cumbersome inversion calculations, enabling rapid visualization of massive amounts of 3D data.

[0067] Reliable results: Through two innovative filtering strategies, near-zero coupling arrays that would invalidate the calculation results are effectively eliminated, and the generated pseudo-profiles can reliably reproduce the main features of the underground structure, such as layered interfaces, vertical contact surfaces, and local anomalies.

[0068] High data utilization: Compared to simply excluding all γ-type arrays (losing about 1 / 3 of the data), especially the zero-value elimination filtering strategy, more effective data points can be retained while ensuring data quality (experiments show that more than 60% can be retained), improving the resolution and integrity of the profile.

[0069] High versatility: This invention filters based solely on electrode geometry, without relying on any prior geological assumptions or measured data, making it suitable for various complex geoelectric models and field measurement environments.

[0070] In one specific embodiment, researchers surveyed a 5×5 electrode array with a grid spacing of 4 meters at an abandoned landfill. Electrode locations were determined with an accuracy of 3 centimeters using differential GPS technology. Following the pseudo-pole-pole method, fixed reference current and potential benchmarks were established several meters outside the grid. During each injection, the reference current and a specific electrode within the grid were used as current electrodes, and the potentials of the remaining electrodes were measured relative to the benchmark potentials. Post-processing was performed to add and subtract from the measurement data, ultimately obtaining a complete 5×5 grid dataset (37,950 arrays in total). Figure 3 The apparent resistivity distribution is shown in a three-dimensional scatter plot, with red dots marking the electrode locations. A significant near-surface resistivity anomaly is observed in the northeastern region, while a low-amplitude resistivity anomaly is found along the southern edge.

[0071] The 3D α array data was inverted using SimPEG software. A three-dimensional octree mesh model was used to determine 175,393 resistivity values. During the inversion process, the L2 norm was used to minimize data mismatch error, and a sparse norm-weighted least squares regularization method was employed. The entire inversion process took seven hours and ran on a dual-processor workstation with a clock speed of 3.2 GHz. Figure 4 In the image, the top slice shows a significant shallow resistance anomaly region in the inversion model, located in the northeast direction; the bottom slice is a pseudo-profile plot drawn based on data filtered by a zero-value filter. The pseudo-profile data, after interpolation, is presented as contour slices. Both the inversion results and the pseudo-profile plot clearly show the resistance anomaly characteristics, and the two exhibit a good correlation.

[0072] Please see Figure 5 The diagram shows a structural block diagram of a three-dimensional pseudo-profile generation system for resistivity data based on pseudo-location, according to this application.

[0073] like Figure 5As shown, the resistivity data three-dimensional pseudo-profile generation system 200 includes an acquisition module 210, a processing module 220, a calculation module 230, and a generation module 240.

[0074] The acquisition module 210 is configured to acquire the geometric configuration and measurement values ​​of multiple four-electrode arrays obtained through three-dimensional resistivity measurement.

[0075] The processing module 220 is configured to preprocess the plurality of four-electrode arrays according to a preset array filtering strategy to obtain a target four-electrode array, wherein the array filtering strategy is: retaining four-electrode arrays that involve all four electrodes using both the shortest electrode distance and the second shortest electrode distance.

[0076] Calculate the theoretical potential difference and gradient of each four-electrode array in a uniform half-space, and move the electrode position by a preset step size along the gradient direction. If the sign of the potential difference reverses before and after the movement, the four-electrode array is determined to be close to zero coupling and is excluded.

[0077] The calculation module 230 is configured to calculate the average position of the target sensitivity of each target four-electrode array under a preset infinite uniform half-space model based on the geometric configuration and measurement values ​​of each target four-electrode array, and define the average position of the target sensitivity of each target as the target pseudo position of the corresponding target four-electrode array.

[0078] The generation module 240 is configured to draw a three-dimensional pseudo-section based on the target pseudo-position and apparent resistivity value of the target four-electrode array, using a three-dimensional scatter plot or interpolated contour plot.

[0079] It should be understood that Figure 5 The modules and references described in the document Figure 1 The steps described in the text correspond to those in the method described above. Therefore, the operations, features, and corresponding technical effects described above also apply to the method described in the text. Figure 5 The various modules in the document will not be described in detail here.

[0080] In other embodiments, the present invention also provides a computer-readable storage medium having a computer program stored thereon, wherein when the program instructions are executed by a processor, the processor performs the method for generating a three-dimensional pseudo-profile of resistivity data based on pseudo-position in any of the above method embodiments.

[0081] In one embodiment, the computer-readable storage medium of the present invention stores computer-executable instructions, which are configured as follows:

[0082] Obtain the geometric configuration and measurement values ​​of multiple four-electrode arrays obtained through three-dimensional resistivity measurement;

[0083] The multiple four-electrode arrays are preprocessed according to a preset array filtering strategy to obtain a target four-electrode array. The array filtering strategy is to retain four-electrode arrays that involve all four electrodes using both the shortest and second shortest electrode distances.

[0084] Calculate the theoretical potential difference and gradient of each four-electrode array in a uniform half-space, and move the electrode position by a preset step size along the gradient direction. If the sign of the potential difference reverses before and after the movement, the four-electrode array is determined to be close to zero coupling and is excluded.

[0085] Based on the geometric configuration and measurement values ​​of each target four-electrode array, the average position of the target sensitivity of each target four-electrode array under the preset infinite uniform half-space model is calculated, and the average position of the target sensitivity of each target is defined as the target pseudo position of the corresponding target four-electrode array.

[0086] Based on the target pseudo-position and apparent resistivity value of the target four-electrode array, a three-dimensional pseudo-section is drawn using a three-dimensional scatter plot or interpolated contour plot.

[0087] Computer-readable storage media may include a stored program area and a stored data area, wherein the stored program area may store an operating system and an application program required for at least one function; the stored data area may store data created based on the use of the pseudo-position-based resistivity data three-dimensional pseudo-profile generation system, etc. Furthermore, the computer-readable storage medium may include high-speed random access memory, and may also include memory, such as at least one disk storage device, flash memory device, or other non-volatile solid-state storage device. In some embodiments, the computer-readable storage medium may optionally include memory remotely disposed relative to a processor, which can be connected to the pseudo-position-based resistivity data three-dimensional pseudo-profile generation system via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0088] Figure 6 This is a schematic diagram of the structure of the electronic device provided in the embodiment of the present invention, such as... Figure 6 As shown, the device includes a processor 310 and a memory 320. The electronic device may also include an input device 330 and an output device 340. The processor 310, memory 320, input device 330, and output device 340 can be connected via a bus or other means. Figure 6Taking a bus connection as an example, memory 320 is the computer-readable storage medium described above. Processor 310 executes various server functions and data processing by running non-volatile software programs, instructions, and modules stored in memory 320, thereby implementing the method embodiment for generating three-dimensional pseudo-profiles based on pseudo-position resistivity data. Input device 330 can receive input digital or character information and generate key signal inputs related to user settings and function control of the three-dimensional pseudo-profile generation system based on pseudo-position resistivity data. Output device 340 may include a display device such as a screen.

[0089] The aforementioned electronic device can execute the method provided in the embodiments of the present invention, and has the corresponding functional modules and beneficial effects for executing the method. Technical details not described in detail in this embodiment can be found in the method provided in the embodiments of the present invention.

[0090] In one implementation, the above-described electronic device is applied in a three-dimensional pseudo-profile generation system for resistivity data based on pseudo-positions, for a client, and includes: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to:

[0091] Obtain the geometric configuration and measurement values ​​of multiple four-electrode arrays obtained through three-dimensional resistivity measurement;

[0092] The multiple four-electrode arrays are preprocessed according to a preset array filtering strategy to obtain a target four-electrode array. The array filtering strategy is to retain four-electrode arrays that involve all four electrodes using both the shortest and second shortest electrode distances.

[0093] Calculate the theoretical potential difference and gradient of each four-electrode array in a uniform half-space, and move the electrode position by a preset step size along the gradient direction. If the sign of the potential difference reverses before and after the movement, the four-electrode array is determined to be close to zero coupling and is excluded.

[0094] Based on the geometric configuration and measurement values ​​of each target four-electrode array, the average position of the target sensitivity of each target four-electrode array under the preset infinite uniform half-space model is calculated, and the average position of the target sensitivity of each target is defined as the target pseudo position of the corresponding target four-electrode array.

[0095] Based on the target pseudo-position and apparent resistivity value of the target four-electrode array, a three-dimensional pseudo-section is drawn using a three-dimensional scatter plot or interpolated contour plot.

[0096] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., including several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods of various embodiments or some parts of embodiments.

[0097] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A pseudo-section generation method of resistivity data in three dimensions based on pseudo-positions, characterized by, The method comprises: obtaining a plurality of four-electrode array geometric configurations and measurement values obtained through three-dimensional resistivity measurement; preprocessing the plurality of four-electrode arrays according to a preset array filtering strategy to obtain target four-electrode arrays, wherein the array filtering strategy is to retain four-electrode arrays that satisfy that the shortest electrode distance and the second shortest electrode distance both involve all four electrodes; The theoretical potential difference and gradient of each four-electrode array in a homogeneous half-space are calculated, and the electrode position is moved in the gradient direction by a preset step size If the sign of the potential difference before and after the movement is reversed, it is determined that the four-electrode array is close to the zero-coupling state and is excluded, wherein the expression for calculating the theoretical potential difference of each four-electrode array in a homogeneous half-space is: ， wherein is the potential between the M electrode and the N electrode when the A electrode and the B electrode are supplied with power, is the current, is the resistance, is the distance between the A electrode and the M electrode, is the distance between the A electrode and the N electrode, is the distance between the B electrode and the M electrode, is the distance between the B electrode and the N electrode; the expression for calculating the gradient of each four-electrode array in a uniform half-space is: ， ， wherein is the gradient of the potential between the M electrode and the N electrode in a homogeneous half-space when the A electrode and the B electrode are powered, is the partial derivative of the potential of the A electrode in the x direction, is the potential between the M electrode and the N electrode, is the abscissa of the A electrode, is the abscissa of the M electrode, is the abscissa of the N electrode, is the abscissa of the B electrode, is the ordinate of the A electrode, is the ordinate of the M electrode, is the ordinate of the N electrode, is the ordinate of the B electrode.​ calculating the target sensitivity average position of each target four-electrode array under a preset infinite uniform half-space model according to the geometric configuration and the measurement value of each target four-electrode array, and defining each target sensitivity average position as the target pseudo position of the corresponding target four-electrode array, wherein the expression for calculating the sensitivity average position of each four-electrode array under the preset infinite uniform half-space model is: ， ， ， ， wherein is the x coordinate of the four-electrode array in the preset infinite homogeneous half-space model, is the y coordinate of the four-electrode array in the preset infinite homogeneous half-space model, is the z coordinate of the four-electrode array in the preset infinite homogeneous half-space model, is the geometric factor, is the horizontal coordinate of the A electrode, is the horizontal coordinate of the M electrode, is the horizontal coordinate of the N electrode, is the horizontal coordinate of the B electrode, is the vertical coordinate of the A electrode, is the vertical coordinate of the M electrode, is the vertical coordinate of the N electrode, is the vertical coordinate of the B electrode, is the distance between the A electrode and the M electrode, is the distance between the A electrode and the N electrode, is the distance between the B electrode and the M electrode, is the distance between the B electrode and the N electrode. based on the target pseudo position and the apparent resistivity value of the target four-electrode array, drawing a three-dimensional pseudo profile through a three-dimensional scatter plot or an interpolated contour plot.

2. The pseudo-section generating method based on pseudo-location resistivity data in three dimensions according to claim 1, characterized in that, The three-dimensional pseudo profile drawn based on the target pseudo position and the apparent resistivity value of the target four-electrode array through a three-dimensional scatter plot or an interpolated contour plot comprises taking the target pseudo position of the target four-electrode array as a spatial coordinate point; visualizing the apparent resistivity value corresponding to the target four-electrode array in a color or size mapping manner; generating a continuous resistivity distribution map using an interpolation algorithm or directly drawing a three-dimensional scatter plot.

3. The pseudo-section generating method based on pseudo-location resistivity data in three dimensions according to claim 1, characterized in that, The preset step size Taking a value of half of a typical electrode spacing.

4. The pseudo-section generating method of claim 1, wherein, The four-electrode array retained using the shortest electrode distance and the second shortest electrode distance both involving all four electrodes is specifically The method comprises: If the shortest distance is the distance between the A electrode and the N electrode then the next shortest distance must be the distance between the B electrode and the N electrode ; or If the shortest distance is between the A electrode and the N electrode then the next shortest distance must be between the B electrode and the M electrode to ensure that all four electrodes are included in the two shortest distances.

5. A pseudo-section generating system of three-dimensional pseudo-sections based on resistivity data, characterized by an obtaining module configured to obtain a plurality of four-electrode array geometric configurations and measurement values obtained through three-dimensional resistivity measurement; a processing module configured to preprocess the plurality of four-electrode arrays according to a preset array filtering strategy to obtain target four-electrode arrays, wherein the array filtering strategy is to retain four-electrode arrays that satisfy that the shortest electrode distance and the second shortest electrode distance both involve all four electrodes; the expression for calculating the gradient of each four-electrode array in a uniform half-space is: The theoretical potential difference and gradient of each four-electrode array in a homogeneous half-space are calculated, and the electrode position is moved in the gradient direction by a preset step size If the sign of the potential difference before and after the movement is reversed, it is determined that the four-electrode array is close to the zero-coupling state and is excluded, wherein the expression for calculating the theoretical potential difference of each four-electrode array in a homogeneous half-space is: ， wherein is the potential between the M electrode and the N electrode when the A electrode and the B electrode are supplied with power, is the current, is the resistance, is the distance between the A electrode and the M electrode, is the distance between the A electrode and the N electrode, is the distance between the B electrode and the M electrode, is the distance between the B electrode and the N electrode; a calculation module configured to calculate the target sensitivity average position of each target four-electrode array under a preset infinite uniform half-space model according to the geometric configuration and the measurement value of each target four-electrode array, and define each target sensitivity average position as the target pseudo position of the corresponding target four-electrode array, wherein the expression for calculating the sensitivity average position of each four-electrode array under the preset infinite uniform half-space model is: ， ， wherein is the gradient of the potential between the M electrode and the N electrode in a homogeneous half-space when the A electrode and the B electrode are powered, is the partial derivative of the potential of the A electrode in the x direction, is the x coordinate of the A electrode, is the x coordinate of the N electrode, is the y coordinate of the A electrode, is the y coordinate of the N electrode, is the y coordinate of the B electrode;​​​​​ a generation module configured to draw a three-dimensional pseudo profile through a three-dimensional scatter plot or an interpolated contour plot based on the target pseudo position and the apparent resistivity value of the target four-electrode array. ， ， ， ， wherein is the x coordinate of the four-electrode array in the preset infinite homogeneous half-space model, is the y coordinate of the four-electrode array in the preset infinite homogeneous half-space model, is the z coordinate of the four-electrode array in the preset infinite homogeneous half-space model, is the geometric factor, is the horizontal coordinate of the A electrode, is the horizontal coordinate of the M electrode, is the horizontal coordinate of the N electrode, is the horizontal coordinate of the B electrode, is the vertical coordinate of the A electrode, is the vertical coordinate of the M electrode, is the vertical coordinate of the distance between the A electrode and the N electrode, is the vertical coordinate of the B electrode, is the distance between the A electrode and the N electrode, is the distance between the A electrode and the M electrode, is the distance between the B electrode and the M electrode, is the distance between the B electrode and the N electrode; The method comprises:

6. An electronic device, comprising: at least one processor and a memory connected to the at least one processor in communication, wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the method of any one of claims 1 to 4. The program is executed by the processor to implement the method of any one of claims 1 to 4.

7. A computer-readable storage medium having stored thereon a computer program, characterized in that, ​

Images