Light-emitting device, manufacturing method thereof and display device

Abstract

The invention discloses a light-emitting device, a manufacturing method thereof and a display device. The light-emitting device comprises a support, a light-emitting chip located in the support, a protective layer covering the surface of the light-emitting chip and a packaging layer filled on the protective layer. The fluorescent material is mixed in the packaging layer and the protective layer, so that after the protective layer is formed, the light-emitting chip can be lightened, the fluorescent material in the protective layer is excited to emit light, the light emitting of the light-emitting device is detected by adopting detection equipment, and the uniformity of the protective layer can be judged according to the light emitting conditions of the fluorescent material and the light-emitting chip. And the manufacturing process of the protective layer is continuously optimized, so that the thickness of the protective layer is uniform, and the reliability of the protective layer is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a light emitting device, a manufacturing method thereof and a display device. BACKGROUND

[0002] Light emitting diode (LED) has the advantages of high brightness, low cost, more environmental protection and is widely used in lighting, display and other application scenarios.

[0003] The current white light LED is mainly divided into YAG phosphor ordinary color gamut LED and KSF phosphor high color gamut LED according to the different phosphor used.

[0004] YAG phosphor is doped with Ce and other rare earth elements in billion aluminum garnet, and the molecular structure is very stable, so that the YAG powder LED lamp bead has high reliability. However, the LED color gamut of YAG phosphor is poor, and the LED of KSF phosphor has high color gamut. However, KSF phosphor is unstable and is easily hydrolyzed by moisture, and the F ions produced after hydrolysis can corrode the LED chip, so improving the reliability of KSF phosphor LED is the research focus in the field. SUMMARY

[0005] In a first aspect of the embodiments of the present application, a light emitting device is provided, comprising:

[0006] a support, the support forming a containing space;

[0007] a light emitting chip located in the containing space of the support;

[0008] a protective layer covering the bottom, inner wall of the containing space of the support and the surface of the light emitting chip; and

[0009] an encapsulation layer filled on the protective layer in the support;

[0010] wherein the protective layer and the encapsulation layer both mix fluorescent materials.

[0011] In some embodiments of the present application, the fluorescent material in the protective layer is at least one of nitride fluorescent powder, oxynitride fluorescent powder, silicate fluorescent powder and YAG fluorescent powder.

[0012] In some embodiments of the present application, the fluorescent material mixed in the encapsulation layer includes a plurality of fluorescent powders, and the fluorescent material mixed in the protective layer is at least one of the plurality of fluorescent powders included in the encapsulation layer.

[0013] In some embodiments of the present application, the outgoing light of the light emitting chip is blue light, and the fluorescent material in the encapsulation layer is red fluorescent powder and green fluorescent powder.

[0014] In some embodiments of the present application, the red fluorescent powder is KSF fluorescent powder, and the green fluorescent powder is β-Sialon fluorescent powder.

[0015] In some embodiments of the present application, the fluorescent material in the protective layer is β-Sialon fluorescent powder.

[0016] In some embodiments of the present application, the material used in the protective layer is modified organic silicon compound.

[0017] In some embodiments of the present application, the thickness of the protective layer is uniform at each position.

[0018] In the second aspect of the embodiments of the present application, a manufacturing method of a light emitting device is provided, comprising:

[0019] providing a support;

[0020] transferring a light emitting chip into the support;

[0021] forming a protective layer on the light emitting chip, wherein the protective layer is mixed with fluorescent material;

[0022] lighting up the light emitting chip, exciting the fluorescent material in the protective layer to emit light, and detecting the protective layer;

[0023] rejecting the light emitting device that does not meet the detection standard;

[0024] filling an encapsulation layer on the protective layer in the support.

[0025] In the third aspect of the embodiments of the present application, a display device is provided, comprising a driving circuit and a plurality of light emitting devices connected with the driving circuit, wherein the light emitting device is any of the above light emitting devices.

[0026] In the light emitting device, the manufacturing method thereof and the display device provided by the embodiments of the present application, the light emitting device comprises a support, a light emitting chip in the support, a protective layer covering the surface of the light emitting chip, and an encapsulation layer filled on the protective layer. The fluorescent material is mixed in the encapsulation layer and the protective layer. After the protective layer is formed, the light emitting chip can be lighted up, so as to excite the fluorescent material in the protective layer to emit light. The light emitting device is detected by using a detection device. According to the light emitting of the fluorescent material and the light emitting chip, the uniformity of the protective layer can be judged, and the manufacturing process of the protective layer can be continuously optimized, so as to make the thickness of the protective layer uniform and improve the reliability of the protective layer. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly introduced as follows. Obviously, the drawings introduced below are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0028] Figure 1 Structure schematic diagram of the light emitting device provided by the embodiment of the present application;

[0029] Figure 2 Structure schematic diagram of the light emitting device provided by the embodiment of the present application;

[0030] Figure 3 Structure schematic diagram of the light emitting device provided by the embodiment of the present application;

[0031] Figure 4 Structure schematic diagram of the light emitting chip provided by the embodiment of the present application;

[0032] Figure 5 Flow chart of the manufacturing method of the light emitting device provided by the embodiment of the present application;

[0033] Figure 6 Structure schematic diagram of the support;

[0034] Figure 7 Structure schematic diagram of the light emitting chip after being transferred;

[0035] Figure 8 Structure schematic diagram of the light emitting chip after being filled with the protective layer material;

[0036] Figure 9 Structure schematic diagram of the light emitting chip after forming the protective layer;

[0037] Figure 10 Structure schematic diagram of the light emitting chip after detecting the protective layer;

[0038] Figure 11 Structure schematic diagram of the light emitting chip after being filled with the packaging material;

[0039] Figure 12 Structure schematic diagram of the display device provided by the embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to make the above objectives, features and advantages of the present application more clear and comprehensible, the following will further illustrate the present application with reference to the accompanying drawings and examples. However, the example embodiments can be implemented in various forms, and should not be understood as being limited to the embodiments set forth herein; on the contrary, these embodiments are provided so as to make the present application more comprehensive and complete, and to fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings represent the same or similar structures, and thus repeated description thereof will be omitted. The expressions of position and direction described in the present application are illustrated with reference to the drawings, but can be changed as needed, and the changes made are included in the scope of protection of the present application. The drawings of the present application are only used to illustrate the relative positional relationship and do not represent the true proportions.

[0041] LED is a light-emitting device that converts electrical energy into light energy, and has many unique advantages, making it very widely used in various applications. Compared with traditional lighting, LED has higher energy conversion efficiency, and can produce the same light intensity with less electrical energy. In addition, LED also has the advantages of long service life, low cost, environmental protection, small size, etc.

[0042] White light LED has very wide applications in both lighting and display fields, such as Figure 1 As shown, white light LED can use a blue light emitting chip 12 to excite fluorescent powder to emit fluorescent light, and the laser emitted and the excited fluorescent light are mixed to form white light. The above fluorescent powder can be YAG fluorescent powder x1, which is yttrium aluminum garnet doped with Ce and other rare earth elements, and has a very stable molecular structure, which can effectively convert blue light into yellow light, and has a high light conversion efficiency. Moreover, YAG fluorescent powder can still maintain stable light emitting performance in high temperature environment, which is crucial for the reliability of LED. YAG fluorescent powder is not easy to be chemically corroded, which is conducive to maintaining the performance of LED for a long time. Although YAG fluorescent powder has the above advantages, the LED using YAG fluorescent powder cannot meet the high color gamut requirement, especially when applied to display devices with high display effect requirements, the white light LED using YAG fluorescent powder cannot meet the use requirements.

[0043] Therefore, as shown in Figure 2 White light LED can also use KSF fluorescent powder x2, which has a higher color gamut, and can make the color of the display picture more rich and real when applied to the display field. High-voltage LED using KSF fluorescent powder can obtain higher brightness under the same driving current, which is very suitable for application in the display field.

[0044] However, the composition of KSF fluorescent powder is potassium fluorosilicate (K2SiF6:Mn 4+KSF phosphor is susceptible to moisture and hydrolysis, especially during sea transport. The high temperature and humidity in the tropics cause KSF phosphor to hydrolyze, and the F ions produced after hydrolysis can corrode the light-emitting chip, affecting the reliability of the LED.

[0045] To overcome the above problems, such as Figure 2 As shown, a protective layer 14 can be formed on the surface of the light-emitting chip 12 to prevent the effects of water, oxygen, and phosphor decomposition products on the light-emitting chip. When the LED has a large number of light-emitting chips 12, the arrangement of the light-emitting chips is also more complex, which makes it impossible to completely guarantee the uniformity and thickness requirements of the protective layer 14 on its surface.

[0046] The protective layer 14 is extremely thin and transparent, making effective testing of the film impossible after molding. Current testing methods involve sampling the completed LEDs; if this is detected, the LEDs suffer permanent damage and cannot be used. Therefore, the reliability risk of the LEDs remains very high.

[0047] To overcome the above problems, embodiments of the present invention provide a light-emitting device that can detect the protective layer during the manufacturing process and continuously optimize the manufacturing process of the protective layer based on the detection results, thereby improving the reliability of the light-emitting device.

[0048] like Figure 4 As shown, the light-emitting device provided in this embodiment of the invention includes: a bracket 11, a light-emitting chip 12, an encapsulation layer 13, and a protective layer 14.

[0049] The bracket 11 forms a receiving space for housing the light-emitting chip 12, which is used to encapsulate the light-emitting chip 12 in the bracket 11, thereby protecting the light-emitting chip 12.

[0050] The bracket 11 provides physical support and electrical connection for the light-emitting chip 12. For example... Figure 4 As shown, the support 11 may include a substrate, a reflector cup, and wires. The substrate is used to mount the light-emitting chip 12. The reflector cup is annular and disposed on one side of the substrate, forming an accommodating space for mounting the light-emitting chip 12. The inner wall of the reflector cup is formed with a reflective material, which can reflect the emitted light from the light-emitting chip 12 towards the opening side of the reflector cup, thereby improving the light utilization rate of the light-emitting chip 12. An electrical connection portion connecting the interior and exterior is formed on the substrate. The electrodes of the light-emitting chip 12 are connected to the electrical connection portion through wires, thereby enabling the light-emitting chip 12 to communicate with an external circuit.

[0051] The bracket 11 can be made of metal, ceramic, resin or composite material, and there is no limitation.

[0052] The light-emitting chip 12 is located within the support 11. In some embodiments, the light-emitting chip 12 can be an LED chip. Depending on the application requirements, the size of the LED chip can be on the order of millimeters to micrometers.

[0053] As shown in Figure 5 LED chip is epitaxially grown on a substrate, and is grown from bottom to top on the substrate 121 in the order of N-type semiconductor layer 122, multiple quantum well (MQW) light emitting layer 123 and P-type semiconductor layer 124 by using chemical vapor deposition (CVD) in a high-temperature vacuum environment by introducing MO source gas, ammonia NH3, hydrogen H2, etc.

[0054] After the epitaxial structure is made, the epitaxial structure is etched to expose the N-type semiconductor layer 122, the epitaxial structure is insulated by depositing insulating material, and finally the through hole exposing the N-type semiconductor layer 122 and the P-type semiconductor layer 124 is formed by etching the insulating layer 125, and the first electrode e1 and the second electrode e2 are formed by depositing conductive material, the first electrode e1 contacts the N-type semiconductor layer 122, and the second electrode e2 contacts the P-type semiconductor layer 124.

[0055] In some embodiments, the LED chip can use a blue light chip, and the multiple quantum well light emitting layer can be made of gallium nitride (GaN), indium gallium nitride (InGaN), zinc arsenide (ZnSe) and other compound materials.

[0056] A protective layer 14 is arranged on the surface of the light emitting chip 12, and the encapsulating layer 13 is filled on the protective layer 14. Among them, the encapsulating layer 13 is mixed with fluorescent material, and in some embodiments, the fluorescent material includes KSF fluorescent powder. As described above, the KSF fluorescent powder is easy to hydrolyze and affect the performance of the light emitting chip 12, so a protective layer 14 is arranged on the surface of the light emitting chip 12. The protective layer 14 can prevent the product of the KSF fluorescent powder from sinking after hydrolysis from affecting the light emitting chip 12.

[0057] In order to detect the uniformity of the protective layer 14, the fluorescent material is also mixed in the protective layer 14. After the protective layer 14 is formed, the light emitting chip 12 is further encapsulated, and the light emitting chip 12 is lit to excite the fluorescent material in the protective layer 14 to emit light. The light emitting device is detected by using a detection device. According to the light emitting condition of the fluorescent material and the light emitting chip 12, the uniformity of the protective layer 14 can be judged, and the manufacturing process of the protective layer 14 can be continuously optimized to make the thickness of the protective layer 14 uniform and improve the reliability of the protective layer 14.

[0058] In practical implementation, the fluorescent material in the protective layer 14 can be at least one of nitride phosphors, oxide nitride phosphors, silicate phosphors, and YAG phosphors. The fluorescent material in the protective layer 14 needs to be a phosphor with good stability, one that is not prone to chemical changes and will not affect the light-emitting chip 12. Furthermore, the final luminescent characteristics of the light-emitting device must be considered; the luminescence of the fluorescent material can participate in color matching to achieve the final color requirement or white balance of the light-emitting device.

[0059] In some embodiments, the YAG phosphor can be a yellow phosphor that emits yellow fluorescence when excited by blue light. The nitride phosphor can be a red phosphor that emits red light when excited by blue light. The silicate phosphor can be a green phosphor that emits green light when excited by blue light. In practical applications, a suitable phosphor material can be selected and mixed into the protective layer 14 based on the phosphor material in the encapsulation layer 13 of the light-emitting device.

[0060] In some embodiments, the fluorescent material mixed in the encapsulation layer 13 includes a variety of phosphors, and the fluorescent material mixed in the protective layer 14 is at least one of the various phosphors included in the encapsulation layer. Therefore, it is no longer necessary to introduce new materials. When the protective layer 14 is mixed with the phosphor material originally mixed in the encapsulation layer 13, the concentration of such phosphor can be reduced accordingly when making the encapsulation layer 13, thereby maintaining the chromaticity of the light-emitting device.

[0061] In some embodiments, such as Figure 4 As shown, the light-emitting chip 12 can be a blue LED chip for emitting blue light. To achieve a higher color gamut, the phosphor material in the encapsulation layer 13 can include red phosphor and green phosphor. Specifically, the red phosphor is KSF phosphor x2, and the green phosphor is β-Sialon phosphor x3. Correspondingly, the phosphor material in the protective layer 14 can be β-Sialon phosphor x3. β-Sialon phosphor x3 is itself a component of high color gamut phosphors, and its properties are more stable than KSF phosphor. It will not produce corrosive elements that corrode the light-emitting chip 12. Furthermore, properly adjusting the concentration of β-Sialon phosphor in the protective layer 14 and the encapsulation layer 13 will not affect the colorimetry of the light-emitting device.

[0062] In addition, provided that the color gamut is not required, the fluorescent material in the protective layer 14 may also be at least one of the above-mentioned nitride phosphors, oxynitride phosphors, silicate phosphors, and YAG phosphors, without limitation.

[0063] The protective layer 14 can be formed by filling a solution of modified organic silicon compound mixed with phosphor into the support 11, and then baking the solution to evaporate the solvent and solidify the solution to form the dense protective layer 14. The protective layer 14 formed by the above process covers the light emitting chip 12 and the bottom and inner wall of the support 11. By detecting the protective layer 14 and continuously optimizing the manufacturing process of the protective layer 14, the thickness consistency of the protective layer 14 can be higher, thereby improving the reliability of the protective layer 14 and indirectly improving the yield of the light emitting device.

[0064] In specific implementation, the packaging layer 13 is made of an organic silicon compound, which is different from the material of the protective layer 14.

[0065] In the embodiments of the present application, the LED formed by the above structure and manufacturing method can be a high-voltage LED, which refers to an LED with a working voltage of the light emitting chip greater than 3V. In some embodiments, the high-voltage can be realized by connecting a plurality of 3V light emitting chips in series. In some embodiments, the high-voltage can be realized by connecting one or more high-voltage light emitting chips (such as 6V, 9V, 12V, 18V) in series or parallel.

[0066] In addition, the LED in the embodiments of the present application can also be a low-voltage LED. As long as the application scenario of the LED requires a protective layer, detecting the uniformity of the protective layer can improve the reliability of the protective layer and thus improve the yield of the LED. Therefore, the light emitting device provided in the embodiments of the present application is not limited to a white light LED, but can also be an LED of other colors, which is not limited herein.

[0067] On the other hand, the embodiments of the present application also provide a manufacturing method of a light emitting device, Figure 5 The flow chart of the manufacturing method of the light emitting device provided in the embodiments of the present application is shown in FIG. 2.

[0068] As shown in FIG. 2, the manufacturing method of the light emitting device includes the following steps. Figure 5

[0069] S10, providing a support;

[0070] S20, transferring a light emitting chip into the support;

[0071] S30, forming a protective layer on the light emitting chip;

[0072] S40, lighting the light emitting chip to excite the fluorescent material in the protective layer to emit light, and detecting the protective layer;

[0073] S50, rejecting the light emitting device that does not meet the detection standard;

[0074] S60, filling a packaging layer on the protective layer in the support. ​

[0075] The protective layer made by the manufacturing method provided by the embodiment of the present application contains fluorescent material. After the protective layer is formed, the light emitting chip is further packaged. The detection equipment is used to irradiate the protective layer, so as to excite the fluorescent material in the protective layer to emit light. Then, the uniformity of the protective layer can be judged according to the light emission of the fluorescent material, and the manufacturing process of the protective layer is continuously optimized, so that the thickness of the protective layer is uniform, and the reliability of the protective layer is improved.

[0076] Specifically, as shown in Figure 6 First, the bracket 11 is provided. The bracket 11 includes a containing space formed by a substrate and a reflective cup.

[0077] As shown in Figure 7 The light emitting chip 12 is transferred into the containing space of the bracket 11. At least one light emitting chip 12 can be installed in each bracket 11. When two or more light emitting chips 12 are included in the bracket 11, the light emitting chips can be connected in series or in parallel, which is not limited herein.

[0078] In some embodiments, the light emitting chip 12 is an LED chip. The LED chip can be made by epitaxy process and then transferred into the bracket 11.

[0079] As shown in Figure 8 The solution 14' containing modified organosilicon compound mixed with fluorescent material is filled in the bracket 11, for example, S-BARRIER-01 can be used, and the solution 14' is baked to evaporate the solvent. Finally, as shown in Figure 9 A dense protective layer 14 is formed on the surface of the light emitting chip 12 and the inner wall of the bracket 11. The protective layer 14 contains fluorescent material. In some embodiments, the fluorescent material in the protective layer 14 can be at least one of nitride fluorescent powder, oxynitride fluorescent powder, silicate fluorescent powder and YAG fluorescent powder, which is not limited herein.

[0080] As shown in Figure 10As shown, after the protective layer 14 is formed, the light-emitting chip 12 can be lit, thereby exciting the fluorescent material in the protective layer 14 to emit light. The emission of the light-emitting device is detected by the detection device J. If the light-emitting chip 12 is a blue light chip and the fluorescent material in the protective layer 14 is green phosphor, the green phosphor can emit green fluorescence when excited by blue light. Then, the thickness and uniformity of the protective layer 14 can be evaluated based on the green light distribution and blue light leakage detected by the detection device. Light-emitting devices that do not meet the detection standards can be eliminated, and the material and manufacturing process of the protective layer 14 can be adjusted according to the detection structure. When multiple light-emitting chips 12 are packaged in the bracket 11, the arrangement of the light-emitting chips 12 will make the thickness uniformity of the protective layer 14 worse, and the protective layer 14 above the light-emitting chips 12 often cannot meet the thickness requirements. By mixing fluorescent materials into the protective layer 14, it can be detected after the protective layer 14 is formed, thereby adjusting the manufacturing process in time and avoiding the above problems.

[0081] like Figure 11 As shown, a solution 13' of an organosilicon compound mixed with fluorescent material is filled inside the retaining scaffold that meets the testing standards. The solvent in the solution 13' is then evaporated by baking, ultimately forming a dense encapsulation layer 13, achieving the purpose of encapsulating the light-emitting chip 12, and finally preparing a chip as shown in the figure. Figure 3 The light-emitting device shown.

[0082] Both the encapsulation layer 13 and the protective layer 14 can be made of silicone compounds, such as silicone. However, the specific materials used in the encapsulation layer 13 and the protective layer 14 can be different, and the fluorescent materials mixed in the encapsulation layer 13 and the protective layer 14 can be the same or different.

[0083] In some embodiments, the encapsulation layer 13 may contain a variety of phosphors, while the fluorescent material in the protective layer 14 may be one of the phosphors in the encapsulation layer 13. For example, the light-emitting chip 12 may be a blue LED chip, and the encapsulation layer 13 may contain a mixture of KSF phosphor and β-Sialon phosphor. KSF phosphor emits red fluorescence when excited by blue light, and β-Sialon phosphor emits green fluorescence when excited by blue light. KSF phosphor and β-Sialon phosphor are high color gamut phosphors, and the light-emitting device using KSF phosphor and β-Sialon phosphor has a high color gamut, which can be applied to lighting or display fields.

[0084] Based on the same inventive concept, embodiments of the present invention also provide a display device, which may include any of the above-mentioned light-emitting devices. The light-emitting devices may serve as backlights or as display units to participate in image display in the display device.

[0085] In some embodiments, such as Figure 12As shown, the display device can be a liquid crystal display device, comprising a backlight module 100 and a display panel 200.

[0086] The backlight module 100 is used to provide backlight, and can uniformly emit light in the entire light-emitting surface, so as to provide sufficient and uniformly distributed light for the display panel, so that the display panel can normally display images.

[0087] The display panel 200 is located on the light-emitting side of the backlight module 100, and is used for image display. The display panel 200 has a plurality of pixel units arranged in an array, and the light transmittance and color of the light incident on each pixel unit from the backlight module 100 can be independently controlled, so that the light transmitted by all the pixel units constitutes a displayed image.

[0088] The display device provided by the embodiment of the present application can be a liquid crystal display screen, a liquid crystal display, a liquid crystal television, or a mobile terminal such as a mobile phone, a tablet computer, and a smart photo album. The backlight module is used to provide backlight in the display device, and the light emitted by the backlight module is modulated by the display panel to realize image display.

[0089] The backlight module provided by the embodiment of the present application can use the above-mentioned light-emitting device as a backlight source, and specifically can use an LED or a Mini LED. The size of the Mini LED is smaller than that of the LED. Since the light-emitting device provided by the embodiment of the present application has a high color gamut, the use of a large number of Mini LEDs as a backlight source can realize more precise dynamic control, improve the dynamic contrast of liquid crystal display, and realize high-color-gamut and high-dynamic-range image display.

[0090] According to the first inventive concept, a protective layer is formed around the light-emitting chip before the light-emitting chip is packaged. The protective layer can block the damage of water, oxygen and foreign elements to the light-emitting chip, and improve the reliability of the light-emitting chip.

[0091] According to the second inventive concept, the fluorescent material is mixed in the protective layer, and a process of detecting the protective layer is added. By lighting the light-emitting chip, the fluorescent material in the protective layer is excited to emit light, so that the thickness and uniformity of the protective layer can be detected. The light-emitting device that does not meet the detection standard is rejected, so as to reduce the reliability risk of the light-emitting device.

[0092] According to the third inventive concept, the process of the protective layer is continuously optimized according to the detection structure of the detection of the protective layer, so as to improve the yield of the light-emitting device while ensuring the reliability of the light-emitting device.

[0093] According to the fourth inventive concept, the fluorescent material in the protective layer is at least one of a nitride fluorescent powder, an oxynitride fluorescent powder, a silicate fluorescent powder, and a YAG fluorescent powder. The fluorescent material in the protective layer has high stability and does not affect the final light-emitting performance of the light-emitting device.

[0094] According to the fifth inventive concept, multiple phosphor powders can be mixed in the encapsulation layer, and the fluorescent material in the protective layer can be at least one of the multiple phosphor powders in the encapsulation layer, without introducing new materials.

[0095] According to the sixth inventive concept, the fluorescent material in the encapsulation layer can be KSF phosphor powder and beta-Sialon phosphor powder, and the fluorescent material in the protective layer can be beta-Sialon phosphor powder. Both KSF phosphor powder and beta-Sialon phosphor powder are high color gamut phosphor powders. The property of beta-Sialon phosphor powder is more stable than that of KSF, and it will not cause corrosion of the light emitting chip by corrosion elements, and the concentration of the beta-Sialon phosphor powder will not affect the chromaticity of the light emitting device.

[0096] According to the seventh inventive concept, by continuously optimizing the manufacturing process of the protective layer, the thickness uniformity of the protective layer can be better, and the reliability of the light emitting device can be improved.

[0097] Although preferred embodiments of the application have been described, those skilled in the art will be able to make additional changes and modifications without departing from the spirit and scope of the application. Therefore, the appended claims are intended to cover all such changes and modifications that fall within the scope of the application.

[0098] Obviously, those skilled in the art can make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A light-emitting device, characterized in that, include: The bracket forms an accommodating space; The light-emitting chip is located within the accommodating space of the bracket; A protective layer covers the bottom, inner wall, and surface of the light-emitting chip of the accommodating space of the bracket; and An encapsulation layer is filled onto the protective layer within the bracket; Both the protective layer and the encapsulation layer contain fluorescent materials.

2. The light-emitting device as described in claim 1, characterized in that, The fluorescent material in the protective layer is at least one of nitride phosphor, oxynitride phosphor, silicate phosphor, and YAG phosphor.

3. The light-emitting device as described in claim 2, characterized in that, The fluorescent material mixed in the encapsulation layer includes a variety of phosphors, and the fluorescent material mixed in the protective layer is at least one of the various phosphors included in the encapsulation layer.

4. The light-emitting device as described in claim 3, characterized in that, The emitted light from the light-emitting chip is blue light, and the fluorescent materials in the encapsulation layer are red phosphor and green phosphor.

5. The light-emitting device as described in claim 4, characterized in that, The red phosphor is KSF phosphor, and the green phosphor is β-Sialon phosphor.

6. The light-emitting device as described in claim 5, characterized in that, The fluorescent material in the protective layer is β-Sialon phosphor.

7. The light-emitting device according to any one of claims 1 to 6, characterized in that, The protective layer is made of a modified organosilicon compound.

8. The light-emitting device according to any one of claims 1 to 6, characterized in that, The protective layer has a uniform thickness at all locations.

9. A method for manufacturing a light-emitting device, characterized in that, include: Provide a support frame; The light-emitting chip is transferred into the bracket; A protective layer is formed on the light-emitting chip; the protective layer contains a fluorescent material. The light-emitting chip is turned on, which excites the fluorescent material in the protective layer to emit light, and the protective layer is then detected. Eliminate light-emitting devices that do not meet the testing standards; An encapsulation layer is filled into the protective layer inside the bracket.

10. A display device, characterized in that, include: A driving circuit and a plurality of light-emitting devices connected to the driving circuit, wherein the light-emitting devices are any one of claims 1 to 8.

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