Miniature light-emitting device and manufacturing method thereof

Abstract

The invention relates to a miniature light-emitting device and a manufacturing method thereof, and the device comprises a light-emitting array structure which comprises a plurality of light-emitting units, the plurality of light-emitting units comprise a plurality of first light-emitting units and a plurality of second light-emitting units, and the miniature light-emitting device carries out the display through lightening the first light-emitting units; moreover, the light-emitting array structure is provided with a plurality of pixel areas, each pixel area comprises a plurality of sub-pixel areas, at least one first light-emitting unit is arranged in each sub-pixel area, and the corresponding light-emitting units in the edge areas of the sub-pixel areas are all second light-emitting units; the color conversion structure is arranged on the light emitting side of the light emitting array structure and comprises a retaining wall layer and a plurality of color conversion layers, a plurality of through holes are formed in the retaining wall layer, the color conversion layers are located in the through holes respectively, and each through hole is opposite to the corresponding sub-pixel area; the orthographic projection of the retaining wall layer on the light-emitting array structure is arranged around each sub-pixel area so as to separate the sub-pixel areas.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor light emitting, in particular to a micro light emitting device and a manufacturing method thereof. BACKGROUND

[0002] Micro LED (Micro Light Emitting Diode) display technology integrates millions of tiny LED (Light Emitting Diode) pixels onto a chip by miniaturizing and matrixing the LED. Each Micro LED pixel can be independently controlled, and this self-emitting feature provides significant advantages in display performance.

[0003] Quantum dots are a new type of light emitting material with high light emitting efficiency and narrow peak width, which can achieve low power consumption, high collimation, and small size requirements. By utilizing the characteristics of quantum dots absorbing blue light and efficiently emitting red / green light, quantum dot materials can be combined with blue light Micro LED to achieve full-color display.

[0004] However, this combination requires precise matching of the quantum dot layer with the Micro LED light emitting chip array, resulting in high manufacturing process difficulty and potentially causing a series of challenges and problems, thereby affecting the final display effect and device performance. SUMMARY

[0005] Embodiments of the present application provide a micro light emitting device and a manufacturing method thereof to reduce the manufacturing difficulty of the quantum dot layer while ensuring precise matching of the quantum dot layer with the Micro LED light emitting chip array, thereby improving the display effect and performance of the device.

[0006] Embodiments of the present application provide a micro light emitting device, which includes: a light emitting array structure including a plurality of light emitting units, the plurality of light emitting units including a plurality of first light emitting units and a plurality of second light emitting units, and the micro light emitting device displaying by lighting the first light emitting units; and the light emitting array structure having a plurality of pixel regions, each pixel region including a plurality of sub-pixel regions, at least one first light emitting unit being in each sub-pixel region, and the corresponding light emitting units in the edge region of the sub-pixel region being the second light emitting units; a color conversion structure disposed on the light emitting side of the light emitting array structure and including a barrier layer and a plurality of color conversion layers, wherein the barrier layer is provided with a plurality of through holes, the plurality of color conversion layers are respectively located in the plurality of through holes, and each through hole is opposite to a corresponding sub-pixel region; and the orthographic projection of the barrier layer on the light emitting array structure is arranged around each sub-pixel region to separate the sub-pixel regions.

[0007] The light emitting units located in the edge region of the sub-pixel region are all second light emitting units, and are all partially located in the edge region of the sub-pixel region.

[0008] The first light emitting units in the sub-pixel region are all located in the middle region of the sub-pixel region.

[0009] The plurality of sub-pixel regions include a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region, the area of the second sub-pixel region is greater than the area of the first sub-pixel region and the area of the third sub-pixel region, the number of the first light emitting units in the second sub-pixel region is greater than the number of the first light emitting units in the first sub-pixel region and the number of the first light emitting units in the third sub-pixel region; the plurality of color conversion layers include a plurality of first color conversion layers and a plurality of second color conversion layers, the plurality of through holes include a plurality of first through holes, a plurality of second through holes, and a plurality of third through holes, the plurality of first color conversion layers are respectively located in the plurality of first through holes, the plurality of second color conversion layers are respectively located in the plurality of second through holes, and each first through hole is opposite to a corresponding first sub-pixel region, each second through hole is opposite to a corresponding second sub-pixel region, and each third through hole is opposite to a corresponding third sub-pixel region.

[0010] The light emitted by the first light emitting units in the first sub-pixel region is red light after entering the corresponding first through hole; the light emitted by the first light emitting units in the second sub-pixel region is green light after entering the corresponding second through hole; and the light emitted by the first light emitting units in the third sub-pixel region is blue light after entering the corresponding third through hole.

[0011] The area of the first sub-pixel region is equal to the area of the third sub-pixel region, and the number of the first light emitting units in the first sub-pixel region is equal to the number of the first light emitting units in the third sub-pixel region.

[0012] The area of the second sub-pixel region is equal to twice the area of the third sub-pixel region, and the number of the first light emitting units in the second sub-pixel region is equal to twice the number of the first light emitting units in the third sub-pixel region.

[0013] The first sub-pixel region and the third sub-pixel region have the same shape and size, and are both rectangular with a first aspect ratio, the second sub-pixel region is rectangular with a second aspect ratio, and the second aspect ratio is greater than twice the first aspect ratio.

[0014] The first sub-pixel region has one first light emitting unit, and the first light emitting unit in the first sub-pixel region is located at the center position of the first sub-pixel region; the second sub-pixel region has two first light emitting units, and one first light emitting unit in the second sub-pixel region is located at the 1 / 2 position in the width direction of the second sub-pixel region and the 1 / 4 position in the length direction of the second sub-pixel region, and the other first light emitting unit in the second sub-pixel region is located at the 1 / 2 position in the width direction of the second sub-pixel region and the 3 / 4 position in the length direction of the second sub-pixel region; and the third sub-pixel region has one first light emitting unit, and the first light emitting unit in the third sub-pixel region is located at the center position of the third sub-pixel region.

[0015] The first sub-pixel region and the third sub-pixel region are arranged alternately and periodically in the column direction in the same column of pixel regions; and the first sub-pixel region, the third sub-pixel region and the second sub-pixel region are arranged alternately and periodically in the row direction in the same row of pixel regions.

[0016] The first sub-pixel region and the third sub-pixel region are arranged side by side in the column direction in each pixel region, and the first sub-pixel region, the third sub-pixel region and the second sub-pixel region are arranged side by side in the row direction as a whole; and the light emitting units located at the junction of the first sub-pixel region and the second sub-pixel region are all second light emitting units and are shared by the first sub-pixel region and the second sub-pixel region, and the light emitting units located at the junction of the third sub-pixel region and the second sub-pixel region are all second light emitting units and are shared by the third sub-pixel region and the second sub-pixel region.

[0017] The first sub-pixel region and the third sub-pixel region are arranged side by side in the column direction in each pixel region, and the first sub-pixel region, the third sub-pixel region and the second sub-pixel region are arranged side by side in the row direction as a whole; and the light emitting units located at the junction of the first sub-pixel region and the second sub-pixel region are all second light emitting units and are shared by the first sub-pixel region and the second sub-pixel region, and the light emitting units located at the junction of the third sub-pixel region and the second sub-pixel region are all second light emitting units and are shared by the third sub-pixel region and the second sub-pixel region.

[0018] The first sub-pixel region has one first light emitting unit, and the first light emitting unit in the first sub-pixel region is a light emitting unit belonging to both the second column of light emitting units and the second row of light emitting units; the second sub-pixel region has two first light emitting units, and the two first light emitting units in the second sub-pixel region are respectively a light emitting unit belonging to both the fourth column of light emitting units and the second row of light emitting units, and a light emitting unit belonging to both the fourth column of light emitting units and the fourth row of light emitting units; and the third sub-pixel region has one first light emitting unit, and the first light emitting unit in the third sub-pixel region is a light emitting unit belonging to both the second column of light emitting units and the fourth row of light emitting units.

[0019] The color conversion structure further includes a transmission reflection layer, the barrier layer and the transmission reflection layer are sequentially stacked on the light emitting side of the light emitting array structure, and the transmission reflection layer is configured to reflect light emitted by the first light emitting unit and transmit other light except the light emitted by the first light emitting unit; and the transmission reflection layer is provided with a plurality of light transmission through holes, and the plurality of light transmission through holes are respectively arranged corresponding to the plurality of third through holes.

[0020] The color conversion structure further includes a plurality of first color filter layers, a plurality of second color filter layers and a plurality of third color filter layers, wherein the plurality of first color conversion layers are sequentially stacked in the direction away from the light emitting array structure with the plurality of first color filter layers, the plurality of second color conversion layers are sequentially stacked in the direction away from the light emitting array structure with the plurality of second color filter layers, and the plurality of third color filter layers are at least partially located in the plurality of light transmission through holes.

[0021] The color conversion structure further includes a plurality of attenuation filter layers, the plurality of attenuation filter layers are respectively located in the plurality of third through holes, and the plurality of attenuation filter layers are sequentially stacked in the direction away from the light emitting array structure with the plurality of third color filter layers.

[0022] The micro light emitting device further includes an adhesive layer between the color conversion structure and the light emitting array structure, and the adhesive layer connects the color conversion structure and the light emitting array structure together.

[0023] The embodiment of the present application further provides a manufacturing method of the micro light emitting device, the manufacturing method comprising: providing a light emitting array structure, the light emitting array structure comprising a plurality of light emitting units, the plurality of light emitting units comprising a plurality of first light emitting units and a plurality of second light emitting units, and the micro light emitting device displaying by lighting the first light emitting units; and the light emitting array structure having a plurality of pixel regions, each pixel region comprising a plurality of sub-pixel regions, at least one first light emitting unit being in each sub-pixel region, and the corresponding light emitting units in the edge region of the sub-pixel region being the second light emitting units; disposing a color conversion structure on the light emitting side of the light emitting array structure, the color conversion structure comprising a barrier wall layer and a plurality of color conversion layers, wherein the barrier wall layer is provided with a plurality of through holes, the plurality of color conversion layers are respectively located in the plurality of through holes, and each through hole is opposite to a corresponding sub-pixel region; and the orthographic projection of the barrier wall layer on the light emitting array structure is arranged around each sub-pixel region to separate the sub-pixel regions.

[0024] The color conversion structure is fixed on the light emitting side of the light emitting array structure, and each through hole faces the light emitting side surface of the light emitting array structure in the corresponding sub-pixel region.

[0025] The color conversion structure is fixed on the light emitting side of the light emitting array structure, and each through hole faces the light emitting side surface of the light emitting array structure in the corresponding sub-pixel region.

[0026] The beneficial effects of the present application are: the micro light emitting device and the manufacturing method thereof provided by the present application, by setting the color conversion structure on the light emitting side of the light emitting array structure, and setting at least one first light emitting unit in each sub-pixel area in each pixel area, the corresponding light emitting unit in the edge area of each sub-pixel area is a second light emitting unit, and the micro light emitting device displays by lighting the first light emitting unit, and the color conversion structure can convert the light emitted by the light emitting unit for display in each sub-pixel area, to realize full-color display. In this way, both the first light emitting unit and the second light emitting unit are realized in each sub-pixel area, which can expand the area of each sub-pixel area, thereby reducing the shielding of the light emitting surface by the barrier layer, improving the aperture ratio, reducing the absorption of light by the barrier layer, and improving the pixel light emitting brightness of the device. Moreover, since the corresponding light emitting unit in the edge area of each sub-pixel area is a second light emitting unit, this allows the barrier layer in the color conversion structure to extend to the edge area of the sub-pixel area, reducing the alignment accuracy requirement of the through hole on the barrier layer and the sub-pixel area of the light emitting array structure, so as to reduce the manufacturing difficulty of the color conversion structure, improve the production efficiency, and improve the display effect and performance of the device under the condition of ensuring the accurate matching of the color conversion structure and the Micro LED light emitting chip array. BRIEF DESCRIPTION OF DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0028] Figure 1 is a cross-sectional structure schematic diagram of the micro light emitting device provided by the embodiment of the present application;

[0029] Figure 2 is a top view structure schematic diagram of the light emitting array structure provided by the embodiment of the present application;

[0030] Figure 3 is another cross-sectional structure schematic diagram of the micro light emitting device provided by the embodiment of the present application;

[0031] Figure 4 is a cross-sectional structure schematic diagram of the light emitting array structure provided by the embodiment of the present application;

[0032] Figure 5 is a flowchart schematic diagram of the manufacturing method of the micro light emitting device provided by the embodiment of the present application;

[0033] Figure 6 is a cross-sectional structure schematic diagram after forming the transmission reflection layer on one side of the substrate provided by the embodiment of the present application;

[0034] Figure 7 is a schematic diagram of a cross-sectional structure after forming a light-transmitting via penetrating through the light-transmitting reflective layer provided by an embodiment of the present application;

[0035] Figure 8 is a schematic diagram of a cross-sectional structure after forming a color filter layer provided by an embodiment of the present application;

[0036] Figure 9 is a schematic diagram of a cross-sectional structure after forming a barrier material layer provided by an embodiment of the present application;

[0037] Figure 10 is a schematic diagram of a cross-sectional structure after forming a via provided by an embodiment of the present application;

[0038] Figure 11 is a schematic diagram of a cross-sectional structure of a color conversion structure provided by an embodiment of the present application. DETAILED DESCRIPTION

[0039] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0040] The embodiments of the present application will be described in further detail below with reference to the drawings and embodiments. It is particularly pointed out that the following embodiments are only used to illustrate the embodiments of the present application, but do not limit the scope of the embodiments of the present application. Similarly, the following embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application, and all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the embodiments of the present application.

[0041] In the embodiments of the present application, the terms “first” and “second” are only used for description purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by “first” and “second” can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of “plurality” is two or more, unless otherwise specifically limited.

[0042] In the following description, the second component connected to the first component can include an embodiment in which the second component is directly connected to the first component, and can also include an embodiment in which the second component is connected to the first component through an additional component, so that the second component is not directly connected to the first component.

[0043] In the following description, a second component being connected with a first component can include an embodiment in which the second component is directly connected with the first component, and can also include an embodiment in which the second component is connected with the first component through an additional component, such that the second component is not directly connected with the first component.

[0044] In describing the structure of components, when a layer, a region is referred to as being "on" or "above" another layer, another region, it can mean directly on the other layer, the other region, or further including another layer or region therebetween. Also, if the component is flipped, the layer, the region will be "under" or "below" the other layer, the other region. In addition, features, structures or characteristics described hereinafter can be combined in any suitable manner in one or more embodiments.

[0045] In addition, the directional terms mentioned in the embodiments of the present application, such as [up], [down], [front], [back], [left], [right], [inward], [outward], [side] and the like, are only the directions of the reference drawings. Therefore, the directional terms used are used to illustrate and understand the embodiments of the present application, and are not used to limit the embodiments of the present application. In each of the drawings, similar elements are denoted by the same reference numerals. For the sake of clarity, each part in the drawings is not drawn to scale. In addition, some related parts can not be shown in the drawings.

[0046] Micro LED (Micro Light Emitting Diode) technology is a technology of miniaturizing, matrixing and thin-filming LED chips. However, when the pixel size of the Micro LED is reduced to below 10 μm, the red / green light emitting efficiency will decrease sharply, resulting in poor display effect, power consumption increase and other problems. Quantum dots are a new type of light-emitting material with high light-emitting efficiency and narrow peak width, which can realize low power consumption, high collimation, and small size requirements. By using the characteristics of quantum dots absorbing blue light and emitting red / green light efficiently, quantum dot materials can be combined with blue Micro LED to realize full-color display.

[0047] However, this combination puts certain technical requirements on the quantum dot layer, including: patterned matching with the size of the Micro LED, high blue light absorption rate, high color conversion efficiency, and high stability, etc. In the related art, in order to improve the blue light absorption rate, scattering particles are usually introduced into the quantum dot layer, but this will cause the light pattern of the quantum dot layer to be widened, causing the problem of lateral light emission crosstalk. In order to reduce light crosstalk, a barrier wall structure separating the quantum dot sub-pixels is usually introduced. However, the introduction of the barrier wall structure will have certain effects on full-color display, including: 1) the opening rate of the light emitting surface is reduced after the barrier wall is set; 2) the barrier wall formed by the black matrix photoresist (i.e., BM photoresist) has light absorption effect, resulting in reduced light emitting brightness.

[0048] To solve the above problems, the embodiments of the present application provide a micro light emitting device and a manufacturing method thereof. The color conversion structure is arranged on the light emitting side of the light emitting array structure, and each pixel area has at least one first light emitting unit in the sub-pixel area. The edge area of each pixel area in the sub-pixel area corresponds to a second light emitting unit, and the micro light emitting device displays by lighting the first light emitting unit. The color conversion structure can convert the light emitted by the light emitting unit for display in each sub-pixel area, to realize full-color display. In this way, each sub-pixel area has both first and second light emitting units, which can expand the area of each sub-pixel area, thereby reducing the shielding of the light emitting surface by the barrier wall layer, improving the opening rate, reducing the light absorption of the barrier wall, and improving the pixel light emitting brightness of the device. Moreover, since the light emitting unit corresponding to the edge area of each sub-pixel area is a second light emitting unit, the barrier wall layer in the color conversion structure can extend to the edge area of the sub-pixel area, reducing the alignment accuracy requirement of the through hole on the barrier wall layer and the sub-pixel area of the light emitting array structure. Therefore, the production difficulty of the color conversion structure can be reduced, the production efficiency can be improved, and the display effect and performance of the device can be improved, while ensuring the accurate matching of the color conversion structure and the Micro LED light emitting chip array.

[0049] The following will be described in detail in conjunction with specific embodiments. It should be noted that the embodiments of the present application can be presented in various forms, and some examples will be described below.

[0050] Please refer to Figure 1 and Figure 2 , Figure 1 is a cross-sectional structure schematic diagram of the micro light emitting device provided by the embodiments of the present application, Figure 2 is a top view structure schematic diagram of the light emitting array structure provided by the embodiments of the present application. As Figure 1 and Figure 2As shown, the micro light-emitting device 1 includes a light-emitting array structure 10 and a color conversion structure 20. The light-emitting array structure 10 includes multiple light-emitting units 100, and the multiple light-emitting units 100 include multiple first light-emitting units 100A and multiple second light-emitting units 100B. The micro light-emitting device 1 displays by illuminating the first light-emitting units 100A. That is, when the micro light-emitting device 1 is working, only the first light-emitting units 100A in the light-emitting array structure 10 can be illuminated to emit light, while the second light-emitting units 100B cannot be illuminated to emit light.

[0051] In the micro light-emitting device 1, the light-emitting array structure 10 has multiple pixel regions P, and each pixel region P includes multiple sub-pixel regions P0. Each sub-pixel region P0 has at least one first light-emitting unit 100A.

[0052] Specifically, such as Figure 2 As shown, in the above-described light-emitting array structure 10, each sub-pixel region P0 may have multiple light-emitting units 100. It is understood that all light-emitting units 100 in each sub-pixel region P0, except for the first light-emitting unit 100A, are second light-emitting units 100B. Furthermore, in this embodiment, for each sub-pixel region P0, each light-emitting unit 100 may be partially or entirely located within that sub-pixel region P0. Specifically, each light-emitting unit 100 may be partially located within that sub-pixel region P0, while another portion may extend into other sub-pixel regions P0; or, each light-emitting unit 100 may be entirely located within that sub-pixel region P0, that is, it may be completely contained within the boundary of that sub-pixel region P0.

[0053] Thus, compared to the scheme in related technologies where there is only one light-emitting unit in each sub-pixel area, this embodiment sets multiple light-emitting units 100 in each sub-pixel area P0, making the area of ​​each sub-pixel area P0 larger, thereby reducing the area of ​​the barrier layer 21 blocking the light-emitting surface, improving the aperture ratio, reducing the absorption of light by the barrier layer 21, and improving the pixel light emission brightness of the micro light-emitting device 1.

[0054] It should be noted that the arrangement of the second light-emitting unit 100B will not negatively affect the display effect of the micro light-emitting device 1. This is because, in actual use, users focus on the color and brightness of the light emitted by the first light-emitting unit 100A, while the second light-emitting unit 100B does not emit light, and therefore will not interfere with the display effect.

[0055] In some examples, the second light emitting unit 100B described above can be obtained by performing a partial light shielding process on the light emitting unit 100. That is, when the light emitting array structure 10 is manufactured, all the light emitting units 100 can be formed first, and then a light shielding structure can be formed on part of the light emitting units 100 by means of photolithography, etching or the like, so as to obtain the light emitting array structure 10 having the first light emitting unit 100A and the second light emitting unit 100B.

[0056] In other examples, the second light emitting unit 100B described above can also be obtained by selecting part of the light emitting units 100 in the light emitting array structure 10 as the first light emitting unit 100A, and when the micro light emitting device 1 is working, only the selected first light emitting units 100A in the light emitting array structure 10 are provided with corresponding driving signals (such as driving voltages), and the remaining light emitting units 100 (i.e. the second light emitting units 100A) in the light emitting array structure 10 are not provided with corresponding driving signals, so as to realize that only the first light emitting units 100A in the light emitting array structure 10 emit light, and the second light emitting units 100A do not emit light, thereby realizing the design that there are both the first light emitting units 100A and the second light emitting units 100B in the sub-pixel region P0.

[0057] In the present embodiment, as shown in Figure 1 and Figure 3 In the micro light emitting device 1, the color conversion structure 20 is arranged on the light emitting side of the light emitting array structure 10, and can include a barrier layer 21 and a plurality of color conversion layers 22A / 22B / 23C, wherein the barrier layer 21 is provided with a plurality of through holes 23A / 23B / 23C, and the plurality of color conversion layers 22A / 22B / 23C are respectively located in the plurality of through holes 23A / 23B / 23C. Moreover, each through hole 23A / 23B / 23C corresponds to a sub-pixel region P0, and is opposite to the corresponding sub-pixel region P0, so as to ensure that the light emitted by the first light emitting unit 100A in each sub-pixel region P0 can be emitted out through the corresponding through hole 23A / 23B / 23C.

[0058] Specifically, as shown in Figure 2 and Figure 4 In the light emitting array structure 10, the plurality of sub-pixel regions P0 can include a first sub-pixel region P1, a second sub-pixel region P2 and a third sub-pixel region P3. Accordingly, as shown in Figure 1 and Figure 3As shown, in the color conversion structure 20, the plurality of color conversion layers 22A / 22B / 23C can include a plurality of first color conversion layers 22A and a plurality of second color conversion layers 22B, and the plurality of through holes 23A / 23B / 23C can include a plurality of first through holes 23A, a plurality of second through holes 23B and a plurality of third through holes 23C. And, the plurality of first color conversion layers 22A are respectively located in the plurality of first through holes 23A, the plurality of second color conversion layers 22B are respectively located in the plurality of second through holes 23B, and each first through hole 23A is opposite to a corresponding one of the first sub-pixel regions P1, each second through hole 23B is opposite to a corresponding one of the second sub-pixel regions P2, and each third through hole 23C is opposite to a corresponding one of the third sub-pixel regions P3.

[0059] It can be understood that, in the micro light emitting device 1, the light emitting array structure 10 in each sub-pixel region P0 can correspond to one sub-pixel in the micro light emitting device 1. Specifically, in the micro light emitting device 1, the light emitting array structure 10 in each first sub-pixel region P1 can correspond to one first sub-pixel in the micro light emitting device 1, the light emitting array structure 10 in each second sub-pixel region P2 can correspond to one second sub-pixel in the micro light emitting device 1, and the light emitting array structure 10 in each third sub-pixel region P3 can correspond to one third sub-pixel in the micro light emitting device 1.

[0060] And, in the micro light emitting device 1, the orthographic projection of the barrier layer 21 on the light emitting array structure 10 can be arranged around each sub-pixel region P0 to separate the respective sub-pixel regions P0, so as to realize the separation of each sub-pixel region P0 from the remaining sub-pixel regions. Specifically, in the micro light emitting device 1, the orthographic projection of the barrier layer 21 on the light emitting array structure 10 can be arranged around each first sub-pixel region P1, each second sub-pixel region P2 and each third sub-pixel region P3 to separate the respective first sub-pixel regions P1, the respective second sub-pixel regions P2 and the respective third sub-pixel regions P3, so as to realize the separation of each first sub-pixel region P1 from the remaining sub-pixel regions, realize the separation of each second sub-pixel region P2 from the remaining sub-pixel regions, and realize the separation of each third sub-pixel region P3 from the remaining sub-pixel regions. In this way, the light cross-talk problem between the sub-pixels of the micro light emitting device 1 can be improved.

[0061] The barrier wall layer 21 can absorb or reflect the large-angle light emitted by the first light emitting unit 100A in each sub-pixel region P0. In some examples, the material of the barrier wall layer 21 can include, but is not limited to, a high-reflectivity metal such as silver or aluminum. For example, the barrier wall layer 21 can be a silver foil layer or an aluminum foil layer. It can be understood that, compared with a barrier wall layer formed of photoresist, the barrier wall layer 21 of the present embodiment is formed by punching a high-reflectivity metal foil, and the hole wall has high reflectivity and low light absorption, which can improve the utilization rate of the light emitted by the first light emitting unit 100A in each sub-pixel region P0, thereby improving the light emitting efficiency and reducing power consumption.

[0062] In the present embodiment, the light emitted by the first light emitting unit 100A in the first sub-pixel region P1 and exiting after entering the corresponding first through hole 23A can be light of a first target color. The light emitted by the first light emitting unit 100A in the second sub-pixel region P2 and exiting after entering the corresponding second through hole 23B can be light of a second target color. The light emitted by the first light emitting unit 100A in the third sub-pixel region P3 and exiting after entering the corresponding third through hole 23C can be light of a third target color. Moreover, the light of the first target color, the light of the second target color, and the light of the third target color can be combined to form white light.

[0063] Specifically, for each first through hole 23A, the first color conversion layer 22A in the first through hole 23A can be configured to convert the light emitted by the first light emitting unit 100A in the first sub-pixel region P1 corresponding to the first through hole 23A into light of a first target color. For each second through hole 23B, the second color conversion layer 22B in the second through hole 23B can be configured to convert the light emitted by the first light emitting unit 100A in the second sub-pixel region P2 corresponding to the second through hole 23B into light of a second target color, and the second target color is different from the first target color.

[0064] Moreover, the light emitting color of the first light emitting unit 100A in the first sub-pixel region P1, the light emitting color of the first light emitting unit 100A in the second sub-pixel region P2, and the light emitting color of the first light emitting unit 100A in the third sub-pixel region P3 can all be an initial color. For example, the light emitted by the first light emitting unit 100A in the first sub-pixel region P1, the light emitted by the first light emitting unit 100A in the second sub-pixel region P2, and the light emitted by the first light emitting unit 100A in the third sub-pixel region P3 can all be blue light or ultraviolet light, i.e., the initial color can be blue or colorless.

[0065] Specifically, the plurality of first color conversion layers 22A can correspond to the plurality of first through holes 23A one-to-one, and the plurality of first through holes 23A can correspond to the plurality of first sub-pixel regions P1 one-to-one. Each first color conversion layer 22A can be located in a corresponding first through hole 23A, and the first color conversion layer 22A in each first through hole 23A can cover the light-emitting side of the light-emitting array structure 10 within the corresponding first sub-pixel region P1, so as to convert the light of the initial color emitted by the first light-emitting unit 100A within the first sub-pixel region P1 into light of the first target color when the first light-emitting unit 100A emits light within the first sub-pixel region P1, and the initial color is different from the first target color.

[0066] Specifically, the plurality of second color conversion layers 22B can correspond to the plurality of second through holes 23B one-to-one, and the plurality of second through holes 23B can correspond to the plurality of second sub-pixel regions P2 one-to-one. Each second color conversion layer 22B can be located in a corresponding second through hole 23B, and the second color conversion layer 22B in each second through hole 23B can cover the light-emitting side of the light-emitting array structure 10 within the corresponding second sub-pixel region P2, so as to convert the light of the initial color emitted by the first light-emitting unit 100A within the second sub-pixel region P2 into light of the second target color when the first light-emitting unit 100A emits light within the second sub-pixel region P2, and the initial color is different from the second target color.

[0067] In some embodiments, the light of the initial color, the light of the first target color, and the light of the second target color can synthesize white light, and the third target color is the same as the initial color. For example, the initial color can be blue, the first target color can be red, and the second target color can be green, the material of the first color conversion layer 22A can be red quantum dots or other color conversion materials capable of converting blue light into red light, and the material of the second color conversion layer 22B can be green quantum dots or other color conversion materials capable of converting blue light into green light.

[0068] In other embodiments, as Figure 3As shown, the color conversion structure 20 can further include a plurality of third color conversion layers 22C, which are respectively located in the plurality of third through holes 23C. For each third through hole 23C, the third color conversion layer 22C in the third through hole 23C can be configured to convert the light emitted by the first light emitting unit 100A in the third sub-pixel region P3 corresponding to the third through hole 23C from an initial color to a third target color, and the third target color is different from the initial color, and the light of the third target color, the light of the first target color and the light of the second target color can be combined to form white light. For example, the light of the initial color can be ultraviolet light, the light of the first target color can be red light, the light of the second target color can be green light, and the light of the third target color can be blue light. The material of the first color conversion layer 22A can be red quantum dots or other color conversion materials capable of converting ultraviolet light into red light. The material of the second color conversion layer 22B can be green quantum dots or other color conversion materials capable of converting ultraviolet light into green light. The material of the third color conversion layer 22C can be blue quantum dots or other color conversion materials capable of converting ultraviolet light into blue light.

[0069] Specifically, the plurality of third color conversion layers 22C can correspond to the plurality of third through holes 23C one by one, and the plurality of third through holes 23C can correspond to the plurality of third sub-pixel regions P3 one by one. Each third color conversion layer 22C can be located in a corresponding third through hole 23C, and the third color conversion layer 22C in each third through hole 23C can be covered on the light emitting side of the light emitting array structure 10 in the corresponding third sub-pixel region P3, so as to convert the light of the initial color emitted by the first light emitting unit 100A in the third sub-pixel region P3 to the light of the third target color when the first light emitting unit 100A emits light in the third sub-pixel region P3.

[0070] In this way, by using different color conversion layers 22A / 22B / 22C to convert the same color sub-pixel outcoming light into a plurality of different colors of outcoming light, full-color display of the micro light emitting device 1 can be achieved.

[0071] In the present embodiment, as Figure 2As shown, in the light-emitting array structure 10, for each sub-pixel region P0, the light-emitting units 100 corresponding to the edge region of the sub-pixel region P0 (i.e., the light-emitting units 100 partially or completely located in the edge region of the sub-pixel region P0) can all be the second light-emitting units 100B. Thus, since the light-emitting units 100 corresponding to the edge region of each sub-pixel region P0 are all the second light-emitting units 100B, this allows the barrier layer 21 in the color conversion structure 20 to extend to the edge region of the sub-pixel region P0, reduces the alignment accuracy requirement of the through holes 23A / 23B / 23C on the barrier layer 21 and the sub-pixel region P0 of the light-emitting array structure 10, and thus can reduce the manufacturing difficulty of the color conversion structure 20 while ensuring the accurate matching of the color conversion structure 20 and the light-emitting array structure 10, improve the production efficiency, and improve the display effect and performance of the micro light-emitting device 1.

[0072] In some embodiments, as shown in FIG. 1, the light-emitting array structure 10 can include a plurality of sub-pixel regions P0, and each sub-pixel region P0 can include a plurality of light-emitting units 100. Figure 2 As shown, in the light-emitting array structure 10, for each sub-pixel region P0, the light-emitting units 100 corresponding to the edge region of the sub-pixel region P0 (i.e., the light-emitting units 100 partially or completely located in the edge region of the sub-pixel region P0) can all be the second light-emitting units 100B. Thus, since the light-emitting units 100 corresponding to the edge region of each sub-pixel region P0 are all the second light-emitting units 100B, this allows the barrier layer 21 in the color conversion structure 20 to extend to the edge region of the sub-pixel region P0, reduces the alignment accuracy requirement of the through holes 23A / 23B / 23C on the barrier layer 21 and the sub-pixel region P0 of the light-emitting array structure 10, and thus can reduce the manufacturing difficulty of the color conversion structure 20 while ensuring the accurate matching of the color conversion structure 20 and the light-emitting array structure 10, improve the production efficiency, and improve the display effect and performance of the micro light-emitting device 1.

[0073] In some embodiments, as shown in FIG. 1, the light-emitting array structure 10 can include a plurality of sub-pixel regions P0, and each sub-pixel region P0 can include a plurality of light-emitting units 100. Figure 2As shown, in the light-emitting array structure 10, for each sub-pixel region P0, the first light-emitting units 100A in the sub-pixel region P0 can be located in the middle region of the sub-pixel region P0. Through this design, the first light-emitting units 100A are concentratedly distributed, avoiding the brightness unevenness caused by the edge effect, ensuring the maximum light-emitting efficiency of each sub-pixel region P0, reducing the light energy loss, improving the uniformity and stability of the display effect, and further enhancing the overall display performance of the micro light-emitting device 1.

[0074] In some examples, as Figure 2 As shown, in the light-emitting array structure 10, for each sub-pixel region P0, the sub-pixel region P0 can have a plurality of light-emitting units 100, and the plurality of light-emitting units 100 in the sub-pixel region P0 can be arranged in multiple rows and multiple columns, wherein the starting row light-emitting units 100 and the ending row light-emitting units 100 and the starting column light-emitting units 100 and the ending column light-emitting units 100 can all be second light-emitting units 100B, and the first light-emitting units 100A in the sub-pixel region P0 can be located in the middle row light-emitting units 100 and / or the middle column light-emitting units 100.

[0075] In the above embodiment, as Figure 2 and Figure 4 As shown, in the light-emitting array structure 10, the plurality of sub-pixel regions P0 include a first sub-pixel region P1, a second sub-pixel region P2, and a third sub-pixel region P3, and the area of the second sub-pixel region P2 can be greater than the area of the first sub-pixel region P1 and the area of the third sub-pixel region P3, and the number of the first light-emitting units 100A in the second sub-pixel region P2 can be greater than the number of the first light-emitting units 100A in the first sub-pixel region P1 and the number of the first light-emitting units 100A in the third sub-pixel region P3. In this way, the light converted by the color conversion structure 20 through the first sub-pixel region P1, the second sub-pixel region P2, and the third sub-pixel region P3 can be red light, green light, and blue light, respectively, reducing the difference between the brightness of the green light and the brightness of the red light and the blue light converted by the color conversion structure 20, thereby realizing the strengthening of the green sub-pixel for the human eye being most sensitive to green color, improving the brightness perception and detail performance of the picture, and solving the problem that the light conversion efficiency of the quantum dot layer in the existing Micro LED full-color display device is different under different colors, affecting the display effect, realizing the red-green-blue-white balance optimization, and improving the display effect.

[0076] In some specific embodiments, as Figure 2As shown in the light-emitting array structure 10, the area of the first sub-pixel region P1 can be equal to the area of the third sub-pixel region P3, so as to realize that the first sub-pixel and the third sub-pixel of the micro light-emitting device 1 have equal areas. In addition, the number of the first light-emitting units 100A in the first sub-pixel region P1 can be equal to the number of the first light-emitting units 100A in the third sub-pixel region P3, so as to not only improve the brightness of the emitted light (i.e., the light of the second target color) converted by the second color conversion layer 22B, but also reduce the brightness difference between the emitted light converted by the color conversion structure 20, so as to improve the display quality of the micro light-emitting device 1.

[0077] Specifically, as shown in the light-emitting array structure 10, the area of the second sub-pixel region P2 can be equal to twice the area of the third sub-pixel region P3, and the number of the first light-emitting units 100A in the second sub-pixel region P2 can be equal to twice the number of the first light-emitting units 100A in the third sub-pixel region P3. Figure 2 Figure 2 Specifically, as shown in the light-emitting array structure 10, the area of the second sub-pixel region P2 can be equal to twice the area of the third sub-pixel region P3, and the number of the first light-emitting units 100A in the second sub-pixel region P2 can be equal to twice the number of the first light-emitting units 100A in the third sub-pixel region P3.

[0078] Specifically, as shown in the light-emitting array structure 10, the area of the second sub-pixel region P2 can be equal to twice the area of the third sub-pixel region P3, and the number of the first light-emitting units 100A in the second sub-pixel region P2 can be equal to twice the number of the first light-emitting units 100A in the third sub-pixel region P3. Figure 2

[0079] In some examples, as shown in the light-emitting array structure 10, the first sub-pixel region P1 and the third sub-pixel region P3 can have the same shape and size, so as to realize that the first sub-pixel and the third sub-pixel of the micro light-emitting device 1 have equal areas and the same shape, and the pixel layout can be flexibly adjusted to meet specific display requirements while maintaining the overall brightness and display quality. Figure 2 ​​As shown, the first sub-pixel region P1 and the third sub-pixel region P3 can each be a rectangle with a first aspect ratio, and the second sub-pixel region P2 can be a rectangle with a second aspect ratio, where the second aspect ratio can be greater than the first aspect ratio, such as twice the first aspect ratio. For example, the first aspect ratio can be equal to 1, i.e., the first sub-pixel region P1 and the third sub-pixel region P3 can each be a square, such as a 7.5 μm * 7.5 μm square, and the second sub-pixel region P2 can be a 7.5 μm * 15 μm rectangle. In this way, by precisely controlling the shape and size of each sub-pixel region, not only can the light-emitting efficiency be optimized, but the image display can also be improved in terms of fineness and color uniformity, ensuring that the micro light-emitting device 1 can present high-quality visual effects in different display scenarios. At the same time, this structure also helps to reduce manufacturing costs and improve production efficiency, making it more competitive in the market.

[0080] In some embodiments, as shown in FIG. 1, the first sub-pixel region P1 and the third sub-pixel region P3 can each be a square, and the second sub-pixel region P2 can be a rectangle with an aspect ratio greater than 1. Figure 2 As shown in the above light-emitting array structure 10, the first sub-pixel region P1 and the third sub-pixel region P3 can each be a square, and the second sub-pixel region P2 can be a rectangle with an aspect ratio greater than 1. Moreover, the number of first light-emitting units 100A in the first sub-pixel region P1 can be one, and the first light-emitting unit 100A in the first sub-pixel region P1 can be located at the center of the first sub-pixel region P1. The number of first light-emitting units 100A in the second sub-pixel region P2 can be two, and one of the first light-emitting units 100A in the second sub-pixel region P2 can be located at the 1 / 2 position in the width direction and the 1 / 4 position in the length direction of the second sub-pixel region P2, and the other first light-emitting unit 100A in the second sub-pixel region P2 can be located at the 1 / 2 position in the width direction and the 3 / 4 position in the length direction of the second sub-pixel region P2. The number of first light-emitting units 100A in the third sub-pixel region P3 can be one, and the first light-emitting unit 100A in the third sub-pixel region P3 can be located at the center of the third sub-pixel region P3.

[0081] It should be noted that, compared with the scheme that the two first light emitting units 100A in the second sub-pixel area P2 are adjacent and located at the center position of the second sub-pixel area P2, the scheme that the two first light emitting units 100A in the second sub-pixel area P2 are both located at the 1 / 2 position of the width direction of the second sub-pixel area P2 and respectively located at the 1 / 4 position and the 3 / 4 position of the length direction of the second sub-pixel area P2 in the embodiment makes the light emitted by the two first light emitting units 100A in the second sub-pixel area P2 be able to be more uniformly propagated to the corresponding second color conversion layer 22B, thereby being able to improve the utilization rate of the light emitted by the two first light emitting units 100A in the second sub-pixel area P2 and also being able to improve the color conversion efficiency of the second color conversion layer 22B on the light emitted by the two first light emitting units 100A in the second sub-pixel area P2, so that the micro light emitting device 1 can realize high-efficiency full-color display.

[0082] In the above embodiment, as shown in Figure 2 , the above plurality of pixel areas P included in the above light emitting array structure 10 can be arranged in rows and columns. And the first sub-pixel area P1 and the third sub-pixel area P3 can be alternately and periodically arranged in the same column pixel area P along the column direction Y, and the first sub-pixel area P1 and the third sub-pixel area P3 can be alternately and periodically arranged as a whole with the second sub-pixel area P2 in the same row pixel area P along the row direction X.

[0083] Specifically, as shown in Figure 2 , in each pixel area P, the first sub-pixel area P1 and the third sub-pixel area P3 can be arranged side by side along the column direction Y, and the first sub-pixel area P1 and the third sub-pixel area P3 can be arranged side by side as a whole with the second sub-pixel area P2 along the row direction X.

[0084] In this way, the second sub-pixel area P2 of the same column pixel area P can be arranged in a straight line along the column direction Y, so that a straight line effect can be presented by lighting the first light emitting unit 100A in the second sub-pixel area P2.

[0085] And in a specific embodiment, as shown in Figure 2 , in each pixel area, the light emitting unit 100 located at the junction of the first sub-pixel area P1 and the second sub-pixel area P2 is the second light emitting unit 100B and is shared by the first sub-pixel area P1 and the second sub-pixel area P2, and the light emitting unit 100 located at the junction of the third sub-pixel area P3 and the second sub-pixel area P2 is the second light emitting unit 100B and is shared by the third sub-pixel area P3 and the second sub-pixel area P2. As Figure 2As shown, in the light emitting array structure 10, for each first sub-pixel region P1, the light emitting units 100 located at the junction between the first sub-pixel region P1 and other sub-pixel regions adjacent to the first sub-pixel region P1 can all be the second light emitting units 100B and shared by the first sub-pixel region P1 and the other sub-pixel regions adjacent to the first sub-pixel region P1; for each second sub-pixel region P2, the light emitting units 100 located at the junction between the second sub-pixel region P2 and other sub-pixel regions adjacent to the second sub-pixel region P2 can all be the second light emitting units 100B and shared by the second sub-pixel region P2 and the other sub-pixel regions adjacent to the second sub-pixel region P2; for each third sub-pixel region P3, the light emitting units 100 located at the junction between the third sub-pixel region P3 and other sub-pixel regions adjacent to the third sub-pixel region P3 can all be the second light emitting units 100B and shared by the third sub-pixel region P3 and the other sub-pixel regions adjacent to the third sub-pixel region P3. In this way, the area of each sub-pixel region P0 in the pixel region P can be reduced, thereby further reducing the pixel area, improving the pixel density, and also making the barrier layer 21 overlap with part of the number of light emitting units 100 (i.e., the second light emitting units 100B) in the light emitting array structure 10, which is conducive to reducing the manufacturing difficulty of the barrier layer 21.

[0086] In some embodiments, as Figure 2 As shown, the plurality of light emitting units 100 included in the light emitting array structure 10 can be arranged in rows and columns. In the light emitting array structure 10, each pixel region P can span five rows of light emitting units 100 in the column direction, and the five rows of light emitting units 100 can be respectively denoted as a first row of light emitting units, a second row of light emitting units, a third row of light emitting units, a fourth row of light emitting units, and a fifth row of light emitting units in the column direction Y. Each pixel region P can span five columns of light emitting units 100 in the row direction X, and the five columns of light emitting units 100 can be respectively denoted as a first column of light emitting units, a second column of light emitting units, a third column of light emitting units, a fourth column of light emitting units, and a fifth column of light emitting units in the row direction X.

[0087] Correspondingly, as Figure 2As shown, the first sub-pixel region P1 in each pixel region P can specifically be the overlapping region between one half of the first column of light emitting units, the second column of light emitting units and one half of the third column of light emitting units, and one half of the first row of light emitting units, the second row of light emitting units and one half of the third row of light emitting units. The second sub-pixel region P2 in each pixel region P can specifically be the overlapping region between the other half of the third column of light emitting units, the fourth column of light emitting units and one half of the fifth column of light emitting units, and one half of the first row of light emitting units, the second row of light emitting units, the third row of light emitting units, the fourth row of light emitting units and one half of the fifth row of light emitting units. The third sub-pixel region P3 in each pixel region P can specifically be the overlapping region between one half of the first column of light emitting units, the second column of light emitting units and one half of the third column of light emitting units, and the other half of the third row of light emitting units, the fourth row of light emitting units and one half of the fifth row of light emitting units. Through this arrangement, when the light emitting array structure 10 is working, it can ensure uniform brightness and clear edges, effectively improve the display effect.

[0088] Specifically, as Figure 1As shown, the first sub-pixel region P1 in each pixel region P can have one first light emitting unit 100A, and the first light emitting unit 100A in the first sub-pixel region P1 can be a light emitting unit 100 belonging to both the second column of light emitting units and the second row of light emitting units. The second sub-pixel region P2 in each pixel region P can have two first light emitting units 100A, and the two first light emitting units 100A in the second sub-pixel region P2 can be a light emitting unit 100 belonging to both the fourth column of light emitting units and the second row of light emitting units, and a light emitting unit 100 belonging to both the fourth column of light emitting units and the fourth row of light emitting units, respectively. The third sub-pixel region P3 in each pixel region P can have one first light emitting unit 100A, and the first light emitting unit 100A in the third sub-pixel region P3 can be a light emitting unit 100 belonging to both the second column of light emitting units and the fourth row of light emitting units. In this way, not only can an efficient pixel layout and color conversion be achieved, but the display effect and color performance of the micro light emitting device 1 can also be improved. In addition, compared with the scheme in which the two first light emitting units 100A in the second sub-pixel region P2 are adjacent and located at the center position of the second sub-pixel region P2, the scheme in which the two first light emitting units 100A in the second sub-pixel region P2 are spaced apart by one second light emitting unit 100B in the present embodiment makes the light emitted by the two first light emitting units 100A in the second sub-pixel region P2 be able to propagate more uniformly to the corresponding second color conversion layer 22B, thereby being able to improve the utilization of the light emitted by the two first light emitting units 100A in the second sub-pixel region P2, and also being able to improve the color conversion efficiency of the second color conversion layer 22B for the light emitted by the two first light emitting units 100A in the second sub-pixel region P2, thus being able to achieve efficient full-color display of the micro light emitting device 1.

[0089] It should be noted that the pixel structure and the arrangement of the light emitting units 100 in the above embodiments can be adjusted according to actual needs. For example, the number and shape of the pixel regions P, the number and shape of the sub-pixel regions P0, and the number and arrangement of the light emitting units 100 can be flexibly adjusted according to the resolution, size, and display requirements of the micro light emitting device 1.

[0090] In some embodiments, as Figure 3 and Figure 1As shown, the micro light emitting device 1 can further include an adhesive layer 30 located between the color conversion structure 20 and the light emitting array structure 10 and connecting the color conversion structure 20 and the light emitting array structure 10 together. In particular implementation, the side of the color conversion structure 20 provided with the barrier wall layer 21 can be connected to the light emitting side of the light emitting array structure 10 through the adhesive layer 30. In this way, the color conversion structure 20 and the light emitting array structure 10 can be manufactured separately and the manufactured color conversion structure 20 can be fixed to the light emitting side of the light emitting array structure 10 through the inverted lamination process, which is conducive to reducing the process complexity and can be adapted to the arrayed display blue light LED light chip without the need to redesign the light chip structure.

[0091] In some examples, the adhesive layer 30 can be made of a low extinction material, such as optical glue or a mixture thereof.

[0092] In some examples, as shown in Figure 3 and Figure 1 the color conversion structure 20 can further include a substrate 28, and the barrier wall layer 21 and the substrate 28 can be sequentially stacked on the light emitting side of the light emitting array structure 10. The substrate 28 is configured to support the film layer structure thereon, and can be made of a low extinction material, such as glass, polyimide or other organic or inorganic materials.

[0093] In the above examples, as shown in Figure 3 and Figure 1 the color conversion structure 20 can further include a transmissive reflective layer 24, and the barrier wall layer 21 and the transmissive reflective layer 24 can be sequentially stacked on the light emitting side of the light emitting array structure 10. The transmissive reflective layer 24 is configured to reflect the light emitted by the first light emitting unit 100A and transmit other light (such as the first target color light and the second target color light) other than the light emitted by the first light emitting unit 100A.

[0094] In the above examples in which the color conversion structure 20 further includes the substrate 28, as shown in Figure 3 and Figure 1 the barrier wall layer 21, the transmissive reflective layer 24 and the substrate 28 can be sequentially stacked on the light emitting side of the light emitting array structure 10.

[0095] In particular, as shown in Figure 3 and Figure 1As shown, the transmissive reflective layer 24 can be provided with a plurality of light transmission holes 25, which are respectively arranged corresponding to the plurality of third through holes 23C, so as to ensure that the light emitted by the first light emitting unit 100A in each third sub-pixel region P3 can be sequentially emitted to the side of the transmissive reflective layer 24 away from the light emitting array structure 10 through the corresponding third through hole 23C and the corresponding light transmission hole 25.

[0096] In some examples, the transmissive reflective layer 24 can be a distributed Bragg reflector structure layer. Specifically, the transmissive reflective layer 24 can include a plurality of layers of refractive material arranged in a stacked manner in the direction away from the light emitting array structure 10, and adjacent two layers of refractive material can have different refractive indexes. In addition, in specific implementation, the transmissive reflective layer can be formed by using organic materials or inorganic materials (such as inorganic oxides such as titanium dioxide and silicon dioxide) with different refractive indexes to form a stacked structure. In addition, by designing the number and thickness of the layers in the stacked structure and the refractive indexes of the materials of the layers, the center wavelength and bandwidth of the transmittable spectrum of the stacked structure can be adjusted. For example, the transmissive reflective layer 24 can be a stacked structure composed of a plurality of first refractive material layers and a plurality of second refractive material layers arranged in an alternating manner in the direction away from the light emitting structure 11, wherein the first refractive material layers and the second refractive material layers have different refractive indexes, and by designing the thickness and number of layers of the first refractive material layers and the second refractive material layers in the stacked structure, the center wavelength and bandwidth of the transmittable spectrum of the stacked structure can be adjusted.

[0097] In some specific examples, the transmissive reflective layer 24 can be a stacked structure of a titanium dioxide (TiO2) layer and a silicon dioxide (SiO2) layer, and the total thickness of the stacked structure can be 800 nm.

[0098] In this way, by using the transmissive reflective layer 24 to selectively transmit the emitted light converted by the different color conversion layers 22A / 22B / 22C, the problems of blue light leakage and insufficient spectral color purity in the color conversion process of the full-color display module can be improved, and the color purity and color gamut area can be improved.

[0099] In some specific embodiments, as Figure 3 and Figure 1As shown, the color conversion structure 20 can further include a plurality of first color filter layers 27A, a plurality of second color filter layers 27B, and a plurality of third color filter layers 27C. Among them, the plurality of first color conversion layers 22A can be sequentially stacked with the plurality of first color filter layers 27A in the direction away from the light-emitting array structure 10, so that the light emitted by the first light-emitting unit 100A in the first sub-pixel area P1 can be color-converted by the corresponding first color conversion layer 22A first, and then filtered by the corresponding first color filter layer 27A before being emitted to the light-emitting side of the transmission reflection layer 24. The plurality of second color conversion layers 22B can be sequentially stacked with the plurality of second color filter layers 27B in the direction away from the light-emitting array structure 10, so that the light emitted by the first light-emitting unit 100A in the second sub-pixel area P2 can be color-converted by the corresponding first color conversion layer 22B first, and then filtered by the corresponding second color filter layer 27B before being emitted to the light-emitting side of the transmission reflection layer 24. In the above embodiment in which the color conversion structure 20 includes the transmission reflection layer 24, as shown, Figure 3 and Figure 1 The plurality of third color filter layers 27C can be disposed corresponding to the plurality of light-transmitting through holes 25, such as being at least partially located in the plurality of light-transmitting through holes 25, so that the light emitted by the first light-emitting unit 100A in the third sub-pixel area P3 can be filtered by the corresponding third color filter layer 27C before being emitted to the light-emitting side of the transmission reflection layer 24. In the embodiment in which the color conversion structure 20 does not include the transmission reflection layer 24, the plurality of third color filter layers 27C can be located on the side of the substrate 28 facing the light-emitting array structure 10, so that the light emitted by the first light-emitting unit 100A in the third sub-pixel area P3 can be filtered by the corresponding third color filter layer 27C before being emitted to the light-emitting side of the substrate 28,

[0100] In this way, it can be ensured that the light in each sub-pixel area P1 / P2 / P3 can be accurately projected in a high-purity and low-noise form after color conversion and filtering, and finally converge into a full-color display image with bright colors and rich details, significantly improving the visual experience. In addition, by accurately regulating the spectral transmittance of each color filter layer 27A / 27B / 27C, the color gamut coverage range can be further optimized, so that the display image can not only maintain high color saturation, but also realize more delicate color transition, effectively avoiding color difference problems, so as to present stable and realistic visual effects in different lighting environments.

[0101] Specifically, in the above embodiment in which the light of the initial color, the light of the first target color, and the light of the second target color can synthesize white light, and the color conversion structure 20 includes the transmission reflection layer 24, as shown, Figure 4As shown, the color conversion structure 20 can further include a plurality of attenuation filter layers 27D, which are respectively at least partially located in the plurality of third through holes 23C, and the plurality of attenuation filter layers 27D and the plurality of third color filter layers 27C are sequentially stacked in a direction away from the light-emitting array structure 10, so that the light emitted by the first light-emitting unit 100A in the third sub-pixel region P3 can first pass through the corresponding attenuation filter layer 27D for attenuation, and then pass through the corresponding third color filter layer 27C for noise filtering before being emitted to the light-emitting side of the transmission reflection layer 24.

[0102] The material of the attenuation filter layer 27D can be selected from a material capable of partially absorbing the light emitted by the first light-emitting unit 100A in the third sub-pixel region P3, for example, a material capable of partially absorbing blue light, so as to achieve light intensity attenuation, thereby reducing the difference between the luminance of the light in the third sub-pixel region P3 after color conversion and the luminance of the light in the first sub-pixel region P1 and the second sub-pixel region P2 after color conversion, further balancing the luminance uniformity of the overall display picture, ensuring that the light in each sub-pixel region P1 / P2 / P3 after color conversion by the color conversion structure 20 can be fused in a more balanced light intensity ratio when finally synthesized, eliminating visual defects caused by uneven brightness, making each detail of the picture show delicate and harmonious color performance, and comprehensively improving the level and realism of the display effect.

[0103] In addition, in specific implementation, the material, thickness and other parameters of the attenuation filter layer 27D can be adjusted according to actual needs to achieve the desired light attenuation effect, thereby achieving the purpose of controlling white balance. The third color filter layer 27C further purifies the light, so that the finally emitted light has a more pure color.

[0104] In some examples, the attenuation filter layer 27D can be a yellow filter layer, and the third color filter layer 27C can be a blue filter layer. The second color filter layer 27B can be a green filter layer, and the first color filter layer 27A can be a red filter layer.

[0105] It should be noted that, compared with the scheme of arranging the third color filter layer 27C on the light-emitting side of the light-emitting array structure 10 in the third sub-pixel area P3 but not arranging the attenuation filter layer 27D, the scheme of arranging both the third color filter layer 27C and the attenuation filter layer 27D on the light-emitting side of the light-emitting array structure 10 in the third sub-pixel area P3 in the embodiment can further attenuate the light emitted by the first light-emitting unit 100A in the third sub-pixel area P3, so as to reduce the difference between the luminous intensity at the position of the third sub-pixel area P3 and the luminous intensity at the position of the first sub-pixel area P1, and reduce the difference between the luminous intensity at the position of the third sub-pixel area P3 and the luminous intensity at the position of the second sub-pixel area P2.

[0106] In the above embodiment, as shown in Figure 4 The light-emitting array structure 10 can have a plurality of light-emitting areas C1 arranged at intervals, and specifically, the plurality of light-emitting areas C1 can be arranged in an array to form a light-emitting area array. In addition, the light-emitting structure 11 can also have a non-light-emitting area C2, which can include an interval area C21 and a peripheral area C22. The interval area C21 is an interval area between the plurality of light-emitting areas C1, used to separate each light-emitting area C1 from other light-emitting areas C1 located around it, and the peripheral area C22 is a peripheral area of the plurality of light-emitting areas C1.

[0107] It can be understood that in the above micro light-emitting device 1, the light-emitting array structure 10 in each light-emitting area C1 can correspond to a light-emitting unit 100, and the light-emitting unit 100 can be a light-emitting diode, such as a micro light-emitting diode (Micro-LED).

[0108] Specifically, as shown in Figure 4 The light-emitting array structure 10 can include a light-emitting structure 11, which can include a first semiconductor layer 111, a light-emitting layer 112, and a second semiconductor layer 113. The light-emitting layer 112 and the second semiconductor layer 113 are located in the light-emitting area C1 and are sequentially stacked on one side of the first semiconductor layer 111. In addition, the light-emitting side of the light-emitting array structure 10 can be specifically the light-emitting side of the light-emitting structure 11, and the color conversion structure 20 can be specifically located on the side of the first semiconductor layer 111 away from the light-emitting layer 112.

[0109] The light-emitting layer 112 can be a quantum well layer, for example, an indium gallium nitride quantum well layer or an indium gallium nitride / gallium nitride multi-quantum well layer. The first semiconductor layer 111 and the second semiconductor layer 113 have different polarities. Specifically, the first semiconductor layer 111 can be one of an N-type semiconductor layer and a P-type semiconductor layer, and the second semiconductor layer 113 can be the other of the N-type semiconductor layer and the P-type semiconductor layer. The N-type semiconductor layer can be specifically an N-type gallium nitride layer or an N-type gallium arsenide layer, and the P-type semiconductor layer can be specifically a P-type gallium nitride layer or a P-type aluminum gallium nitride layer.

[0110] In some embodiments, the light-emitting structure 11 can further include a buffer layer (not shown in the figure) on the side of the first semiconductor layer 111 away from the light-emitting layer 112, and the color conversion structure 20 can be specifically on the side of the buffer layer away from the first semiconductor layer 111.

[0111] Specifically, the light-emitting structure 11 can further include a first substrate (not shown in the figure) on the side of the buffer layer away from the first semiconductor layer 111, and the color conversion structure 20 can be specifically on the side of the first substrate away from the buffer layer.

[0112] The first substrate is used to support the film layer structure thereon. The buffer layer can relieve the stress between the first semiconductor layer 111 and the first substrate due to lattice mismatch and thermal expansion coefficient mismatch.

[0113] In some examples, the first substrate can be a sapphire substrate, a silicon substrate, or a silicon carbide substrate, etc. The material of the buffer layer can include buffer materials such as silicon nitride, silicon oxide, gallium nitride, or aluminum nitride, etc. For example, the buffer layer can be specifically an unintentionally doped gallium nitride (U-GaN) layer.

[0114] It should be noted that, compared with the scheme in which the color conversion structure 20 is specifically on the side of the first substrate away from the buffer layer, and the scheme in which the color conversion structure 20 is specifically on the side of the buffer layer away from the first semiconductor layer 111, the scheme in which the color conversion structure 20 is specifically on the side of the first semiconductor layer 111 away from the light-emitting layer 112 makes the color conversion structure 20 closer to the light-emitting layer 112 in the light-emitting structure 11, thereby improving the color conversion efficiency of the color conversion structure 20 on the light emitted by the light-emitting layer 112, shortening the propagation path of the light between the color conversion structure 20 and the light-emitting structure 11, reducing the loss of light, and improving the light-emitting efficiency and display effect of the micro light-emitting device 1.

[0115] In some embodiments, as shown in FIG. 2, the color conversion structure 20 can be specifically on the side of the first semiconductor layer 111 away from the light-emitting layer 112. Figure 4As shown, the light-emitting structure 11 may further include a first electrode 115 and a second electrode 116. The first electrode 115 is located in the light-emitting region C1 and is disposed on the side of the second semiconductor layer 113 away from the light-emitting layer 112. The second electrode 116 is located in the non-light-emitting region C2, for example, it may be specifically located in the peripheral region C22 of the non-light-emitting region C2.

[0116] In some embodiments, such as Figure 4 As shown, the light-emitting structure 11 may further include a current diffusion layer 114, which is located in the light-emitting region C1 and disposed between the first electrode 115 and the second semiconductor layer 113. The current diffusion layer 114 can extend and distribute the current to the second semiconductor layer 113 (e.g., a P-type gallium nitride layer), thereby improving the light-emitting efficiency of the light-emitting layer 112.

[0117] Furthermore, in a specific implementation, the current diffusion layer 114 can be fabricated by depositing multiple layers of metal (e.g., titanium Ti, aluminum Al, gold Au, platinum Pt or nickel Ni) or semiconductor oxide (e.g., indium tin oxide ITO or zinc oxide ZnO) on the surface of the second semiconductor layer 113 away from the light-emitting layer 112 to form a current conduction.

[0118] In some embodiments, such as Figure 4 As shown, the light-emitting structure 11 may also include a passivation layer 117, which covers the light-emitting structure 11 to effectively block external water and oxygen from corroding the light-emitting structure 11, thereby improving product reliability.

[0119] Furthermore, in the above-described embodiment where the light-emitting structure 11 further includes a current diffusion layer 114, such as... Figure 4 As shown, the passivation layer 117 can also cover the current diffusion layer 114 to effectively block external water and oxygen from corroding the current diffusion layer 114, thereby improving product reliability.

[0120] Specifically, such as Figure 4 As shown, the first electrode 115 may include a first electrode layer 1151, a first conductive structure 1152, and a first bonding electrode 1153 sequentially stacked in a direction away from the second semiconductor layer 113. The second electrode 116 may include a second electrode layer 1161, a second conductive structure 1162, and a second bonding electrode 1163 sequentially stacked in a direction away from the first semiconductor layer 111. Furthermore, the passivation layer 117 may cover the first electrode layer 1151 and the second electrode layer 1161 to effectively prevent external water and oxygen from eroding the first electrode layer 1151 and the second electrode layer 1161, thereby improving product reliability.

[0121] The first bonding electrode 1153 can be disposed on a region of the side of the passivation layer 117 facing away from the light emitting structure 11, the first electrode layer 1151 and the second electrode layer 1161, corresponding to the first electrode layer 1151. The first conductive structure 1152 can be located between the first bonding electrode 1153 and the first electrode layer 1151, and penetrate the film layer structure (e.g., the passivation layer 117) between the first bonding electrode 1153 and the first electrode layer 1151. The opposite ends of the first conductive structure 1152 in the longitudinal direction Z can be electrically connected to the first bonding electrode 1153 and the first electrode layer 1151 respectively, thereby realizing the electrical connection between the first bonding electrode 1153 and the first electrode layer 1151.

[0122] The second bonding electrode 1163 can be disposed on a region of the side of the passivation layer 117 facing away from the light emitting structure 11, the first electrode layer 1151 and the second electrode layer 1161, corresponding to the second electrode layer 1161. The second conductive structure 1162 can be located between the second bonding electrode 1163 and the second electrode layer 1161, and penetrate the film layer structure (e.g., the passivation layer 117) between the second bonding electrode 1163 and the second electrode layer 1161. The opposite ends of the second conductive structure 1162 in the longitudinal direction Z can be electrically connected to the second bonding electrode 1163 and the second electrode layer 1161 respectively, thereby realizing the electrical connection between the second bonding electrode 1163 and the second electrode layer 1161.

[0123] In some embodiments, the first semiconductor layer 111 can be an N-type semiconductor layer, and the second semiconductor layer 113 can be a P-type semiconductor layer. Accordingly, the first electrode 115 can be a P-type electrode electrically connected to the P-type semiconductor layer, and the second electrode 116 can be an N-type electrode electrically connected to the N-type semiconductor layer, so that all the light emitting units 100 in the light emitting array structure 10 share the same N-type electrode and have an independent P-type electrode respectively.

[0124] In some embodiments, the first semiconductor layer 111 can be an N-type semiconductor layer, and the second semiconductor layer 113 can be a P-type semiconductor layer. Accordingly, the first electrode 115 can be a P-type electrode electrically connected to the P-type semiconductor layer, and the second electrode 116 can be an N-type electrode electrically connected to the N-type semiconductor layer, so that all the light emitting units 100 in the light emitting array structure 10 share the same N-type electrode and have an independent P-type electrode respectively.

[0125] In some examples, the second electrode 116 can be annular, and its orthographic projection on the first semiconductor layer 111 can surround the orthographic projection of all the first electrodes 115 on the first semiconductor layer 111, so as to reduce the contact impedance of the second electrode 116.

[0126] In some examples, the material of the first electrode layer 1151 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). The material of the second electrode layer 1161 may also include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Furthermore, in specific implementations, the first electrode layer 1151 and the second electrode layer 1161 may be made of the same material and may be formed simultaneously.

[0127] In some examples, the material of the first conductive structure 1152 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Similarly, the material of the second conductive structure 1162 may include at least one of the following metals: titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), and aluminum (Al). Furthermore, in specific implementations, the first conductive structure 1152 and the second conductive structure 1162 may be made of the same material and may be formed simultaneously.

[0128] In some examples, the material of the first bonding electrode 1153 may include at least one of the following metals: gold (Au), indium (In), tin (Sn), and copper (Cu); and the material of the second bonding electrode 1163 may include at least one of the following metals: gold (Au), indium (In), tin (Sn), and copper (Cu). Furthermore, in specific implementations, the first bonding electrode 1153 and the second bonding electrode 1163 may be made of the same material and may be formed simultaneously.

[0129] In some examples, the material of the passivation layer 117 may include at least one of insulating materials such as silicon oxide, silicon nitride, and aluminum oxide.

[0130] In the above embodiments, such as Figure 4 As shown, the above-mentioned light-emitting array structure 10 may further include a driving substrate 12, and in the light-emitting array structure 10, the light-emitting structure 11 is disposed on one side of the driving substrate 12. The side of the light-emitting structure 11 away from the driving substrate 12 can be the light-emitting side of the light-emitting structure 11, and the side of the light-emitting structure 11 facing the driving substrate 12 can be the backlight side of the light-emitting structure 11.

[0131] Specifically, in the above-described embodiment where the light-emitting structure 11 further includes a first electrode 115 and a second electrode 116, such as... Figure 5 As shown, the light-emitting structure 11 can be bonded to the driving substrate 12 through the first electrode 115 and the second electrode 116.

[0132] In some embodiments, the driving substrate 12 can include a driving circuit layer 121, a first driving electrode 122, and a second driving electrode 123. The driving circuit layer 121 includes a driving circuit, and the first driving electrode 122 and the second driving electrode 123 are located on the same side of the driving circuit layer 121 and are both electrically connected to the driving circuit.

[0133] In particular, the first electrode 115 of the light-emitting structure 11 can be bonded to the first driving electrode 122 of the driving substrate 12, and the second electrode 116 of the light-emitting structure 11 can be bonded to the second driving electrode 123 of the driving substrate 12, so as to realize the electrical connection between the light-emitting structure 11 and the driving substrate 12, and thus the driving substrate 12 can drive the light-emitting structure 11 to emit light, thereby realizing the display function of the micro light-emitting device 1.

[0134] In particular, the light-emitting array structure 10 can further include an underfill adhesive (not shown in the figure), which is located between the light-emitting structure 11 and the driving substrate 12 and fills the gap between the light-emitting structure 11 and the driving substrate 12, so as to enhance the bonding strength of the light-emitting structure 11 and the driving substrate 12, thereby improving the reliability of the product.

[0135] In some examples, the underfill adhesive can be obtained by filling a colloid (such as epoxy resin glue) into the gap between the light-emitting structure 11 and the driving substrate 12 through an underfill process after the light-emitting structure 11 and the driving substrate 12 are bonded, and then curing the colloid filled between the light-emitting structure 11 and the driving substrate 12.

[0136] In some examples, the driving substrate 12 can be a driving chip or a driving wafer.

[0137] In some examples, the material of the first driving electrode 122 can include conductive materials such as titanium (Ti), aluminum (Al), gold (Au), platinum (Pt), and / or nickel (Ni). The material of the second driving electrode 123 can include conductive materials such as titanium (Ti), aluminum (Al), gold (Au), platinum (Pt), and / or nickel (Ni). In particular, the first driving electrode 122 and the second driving electrode 123 can be made of the same material and can be formed synchronously.

[0138] In the embodiment, the micro light emitting device 1 can be applied to a projection part of an electronic device such as an optical projection, a vehicle head-up display (HUD), etc., a display part of the electronic device, for example, the electronic device can include a smart phone, a smart watch, a notebook computer, a tablet computer, a driving recorder, a navigator, a head-mounted device, etc., any device with a display screen, and an illumination part of the electronic device, for example, the electronic device can include a vehicle, a street lamp, etc., any device with an illumination component.

[0139] As can be seen from the above, the micro light emitting device provided in the embodiment of the present application can realize full-color display by setting the color conversion structure on the light emitting side of the light emitting array structure, and setting at least one first light emitting unit in each sub-pixel area in each pixel area, and the corresponding light emitting unit in the edge area of each sub-pixel area is a second light emitting unit, and the micro light emitting device displays by lighting the first light emitting unit. The color conversion structure can respectively convert the light emitted by the light emitting unit for display in each sub-pixel area, so as to realize full-color display. In this way, each sub-pixel area has both first light emitting units and second light emitting units, which can expand the area of each sub-pixel area, thereby reducing the shielding of the light emitting surface by the barrier layer, improving the opening rate, reducing the absorption of light by the barrier layer, and improving the pixel light emitting brightness of the device. Moreover, since the corresponding light emitting unit in the edge area of each sub-pixel area is a second light emitting unit, the barrier layer in the color conversion structure can extend to the edge area of the sub-pixel area, which reduces the alignment accuracy requirement of the through hole on the barrier layer and the sub-pixel area of the light emitting array structure, thereby reducing the manufacturing difficulty of the color conversion structure, improving the production efficiency, and improving the display effect and performance of the device, while ensuring the accurate matching of the color conversion structure and the Micro LED light emitting chip array.

[0140] Please refer to Figure 5 , Figures 1 to 4 The flowchart of the manufacturing method of the micro light emitting device provided in the embodiment of the present application is shown in Figures 6 to 11 and Figures 1 to 4 , Figures 6 to 11 and Figures 1 to 4 are structural schematic diagrams in the preparation process of the micro light emitting device 1 provided in the embodiment of the present application. The specific flow of the manufacturing method of the micro light emitting device 1 provided in the embodiment can be as follows:

[0141] Step S11: providing a light-emitting array structure 10, the light-emitting array structure 10 comprising a plurality of light-emitting units 100, the plurality of light-emitting units 100 comprising a plurality of first light-emitting units 100A and a plurality of second light-emitting units 100B, and the micro light-emitting device 1 displays by lighting the first light-emitting units 100A; and the light-emitting array structure 10 has a plurality of pixel regions P, each pixel region P comprising a plurality of sub-pixel regions P0, at least one first light-emitting unit 100A is in each sub-pixel region P0, and the corresponding light-emitting units 100 in the edge region of the sub-pixel region P0 are all second light-emitting units 100B (as shown in Figures 1 to 4 ).

[0142] Step S12: disposing a color conversion structure 20 on the light-emitting side of the light-emitting array structure 10, the color conversion structure 20 comprising a barrier layer 21 and a plurality of color conversion layers 22A / 22B / 23C, wherein the barrier layer 21 is provided with a plurality of through holes 23A / 23B / 23C, the plurality of color conversion layers 22A / 22B / 23C are respectively located in the plurality of through holes 23A / 23B / 23C, and each through hole 23A / 23B / 23C is opposite to a corresponding sub-pixel region P0; and the orthographic projection of the barrier layer 21 on the light-emitting array structure 10 is arranged around each sub-pixel region P0 to separate each sub-pixel region P0 (as shown in Figure 1 ).

[0143] In some embodiments, as shown in Figure 3 and Figure 1 , the above step S12 can comprise:

[0144] Step S121: providing the color conversion structure 20.

[0145] Step S122: fixing the color conversion structure 20 on the light-emitting side of the light-emitting array structure 10, and making each through hole 23A / 23B / 23C face the light-emitting side surface of the light-emitting array structure 10 in the corresponding sub-pixel region P0.

[0146] Specifically, as shown in Figure 3 and Figure 2 , the color conversion structure 20 can be fixed on the light-emitting side of the light-emitting array structure 10 by an adhesive layer 30. And in specific implementation, the side of the above color conversion structure 20 provided with the barrier layer 21 can be connected together with the light-emitting side of the light-emitting array structure 10 by the adhesive layer 30.

[0147] In some specific embodiments, as shown in Figure 4 and Figure 1As shown, in the light-emitting array structure 10, the aforementioned multiple sub-pixel regions P0 may include a first sub-pixel region P1, a second sub-pixel region P2, and a third sub-pixel region P3. Furthermore, the area of ​​the second sub-pixel region P2 may be larger than both the area of ​​the first sub-pixel region P1 and the area of ​​the third sub-pixel region P3. The number of first light-emitting units 100A in the second sub-pixel region P2 may be larger than both the number of first light-emitting units 100A in the first sub-pixel region P1 and the number of first light-emitting units 100A in the third sub-pixel region P3.

[0148] Accordingly, such as Figure 3 and Figure 1 As shown, in the color conversion structure 20, the plurality of color conversion layers 22A / 22B / 23C may include a plurality of first color conversion layers 22A and a plurality of second color conversion layers 22B. The plurality of vias 23A / 23B / 23C may include a plurality of first vias 23A, a plurality of second vias 23B and a plurality of third vias 23C. The plurality of first color conversion layers 22A are respectively located in the plurality of first vias 23A, the plurality of second color conversion layers 22B are respectively located in the plurality of second vias 23B, and each first via 23A is opposite to a corresponding first sub-pixel region P1, each second via 23B is opposite to a corresponding second sub-pixel region P2, and each third via 23C is opposite to a corresponding third sub-pixel region P3. In this way, by setting the light converted by the color conversion structure 20 from the first sub-pixel area P1, the second sub-pixel area P2, and the third sub-pixel area P3 to be red, green, and blue light respectively, the difference between the brightness of the green light converted by the color conversion structure 20 and the brightness of the red and blue light can be reduced. Therefore, it can target the human eye's most sensitive green light, strengthen the green sub-pixel, improve the perceived brightness and detail of the picture, and improve the problem of the difference in light conversion efficiency of the quantum dot layer under different colors in existing Micro LED full-color display devices, which affects the display effect. It can achieve red-green-blue-white balance optimization and improve the display effect.

[0149] And, as Figure 3 and Figures 6 to 11 As shown, in the micro-light-emitting device 1, the orthographic projection of the barrier layer 21 onto the light-emitting array structure 10 can be arranged around each first sub-pixel region P1, each second sub-pixel region P2, and each third sub-pixel region P3 to separate each first sub-pixel region P1, each second sub-pixel region P2, and each third sub-pixel region P3. This separates each first sub-pixel region P1 from the remaining sub-pixel regions, each second sub-pixel region P2 from the remaining sub-pixel regions, and each third sub-pixel region P3 from the remaining sub-pixel regions. In this way, the optical crosstalk problem between sub-pixels of the micro-light-emitting device 1 can be improved.

[0150] Furthermore, in specific implementation, such asFigure 6 As shown in the above step S121 can include:

[0151] Step S1-1: providing a substrate 28, and forming a transmissive reflective layer 24 on one side of the substrate 28.

[0152] Wherein, the cross-sectional structure schematic diagram after step S1-1 is completed can be as Figure 7 As shown.

[0153] Specifically, the TiO2 / SiO2 alternating oxide pairs with a total thickness of 800nm can be plated on one side surface of the substrate 28 by a magnetron sputtering process, thereby forming the transmissive reflective layer 24. Wherein, the substrate 28 can be specifically a glass plate.

[0154] Step S1-2: respectively forming a plurality of light transmission holes 25 penetrating the transmissive reflective layer 24 on the side of the transmissive reflective layer 24 away from the substrate 24 corresponding to a plurality of first specified positions.

[0155] Wherein, the cross-sectional structure schematic diagram after step S1-2 is completed can be as Figure 8 As shown.

[0156] Specifically, the plurality of light transmission holes 25 penetrating the transmissive reflective layer 24 from top to bottom and extending to the substrate 28 can be formed by etching the transmissive reflective layer 24 from top to bottom by a dry etching process (for example, an inductively coupled plasma etching process). Wherein, the plurality of light transmission holes 25 correspond one-to-one to the above-mentioned plurality of first specified positions, that is, one light transmission hole 25 is formed corresponding to each first specified position. And the above-mentioned plurality of first specified positions correspond one-to-one to the above-mentioned third sub-pixel area P3 in the above-mentioned plurality of pixel areas P of the light emitting array structure 10, so as to ensure that after the color conversion structure 20 is fixed on the light emitting side of the light emitting array structure 10, the light emitted by the light emitting array structure 10 in each third sub-pixel area P3 can be emitted after the light transmission hole 25.

[0157] Step S1-3: respectively forming a plurality of first color filter layers 27A on the side of the transmissive reflective layer 24 away from the substrate 28 corresponding to a plurality of third specified positions, respectively forming a plurality of second color filter layers 27B on the side of the transmissive reflective layer 24 away from the substrate 28 corresponding to a plurality of second specified positions, and forming a plurality of third color filter layers 27C on the bottom wall surface of the plurality of light transmission holes 25.

[0158] Wherein, the cross-sectional structure schematic diagram after step S1-3 is completed can be as Figure 9 As shown.

[0159] Specifically, the plurality of first color filter layers 27A can be formed on the side of the transmissive reflective layer 24 away from the substrate 28 corresponding to the plurality of third specified positions respectively by a photolithography process, the plurality of second color filter layers 27B can be formed on the side of the transmissive reflective layer 24 away from the substrate 28 corresponding to the plurality of second specified positions respectively by a photolithography process, and the plurality of third color filter layers 27C can be formed on the bottom wall surface of the plurality of light transmission through holes 25 by a photolithography process. The plurality of first color filter layers 27A correspond to the plurality of third specified positions one-to-one, that is, one first color filter layer 27A is formed corresponding to each third specified position. The plurality of second color filter layers 27B correspond to the plurality of second specified positions one-to-one, that is, one second color filter layer 27B is formed corresponding to each second specified position. The plurality of third color filter layers 27C correspond to the plurality of first specified positions one-to-one, that is, one third color filter layer 27C is formed corresponding to each first specified position. Exemplarily, the surface of the first color filter layer 27A away from the substrate 28, the surface of the second color filter layer 27B away from the substrate 28, and the surface of the third color filter layer 27C away from the substrate 28 can be located in the same plane, so as to ensure that the light emitted by the light emitting array structure 10 in each sub-pixel region P1 / P2 / P3 can be filtered by the corresponding color filter layer 27A / 27B / 27C to achieve accurate color mixing, improve the delicacy and color restoration of the display effect, and thus optimize the overall visual experience.

[0160] Furthermore, the plurality of third specified positions correspond to the first sub-pixel regions P1 in the plurality of pixel regions P of the light emitting array structure 10 one-to-one, the plurality of second specified positions correspond to the second sub-pixel regions P2 in the plurality of pixel regions P of the light emitting array structure 10 one-to-one, and the plurality of first specified positions correspond to the first sub-pixel regions P1 in the plurality of pixel regions P of the light emitting array structure 10 one-to-one, so as to ensure that after the color conversion structure 20 is fixed on the light emitting side of the light emitting array structure 10, the light emitted by the light emitting array structure 10 in each sub-pixel region P1 / P2 / P3 can be filtered by the corresponding color filter layer 27A / 27B / 27C to achieve accurate color mixing, improve the delicacy and color restoration of the display effect, and thus optimize the overall visual experience.

[0161] Step S1-4: forming a barrier material layer 21' on the side of the transmissive reflective layer 24 away from the substrate 28, the barrier material layer 21' covering the plurality of first color filter layers 27A, the plurality of second color filter layers 27B, and the plurality of third color filter layers 27C.

[0162] After step S1-4 is completed, the cross-sectional structure diagram can be as shown in Figure 10 .

[0163] Specifically, a 4-μm-thick metal layer can be deposited on the side surface of the transmissive reflective layer 24 away from the substrate 28 by an electron beam evaporation process, so as to form the barrier material layer 21', wherein the barrier material layer 21' is the metal layer, and the metal layer can be specifically an aluminum layer.

[0164] Step S1-5: Forming a plurality of first through holes 23A respectively corresponding to the plurality of first specified positions on the side of the barrier material layer 21' away from the transmissive reflective layer 24, forming a plurality of second through holes 23B respectively corresponding to the plurality of second specified positions on the side of the barrier material layer 21' away from the transmissive reflective layer 24, and forming a plurality of third through holes 23C respectively corresponding to the plurality of first specified positions on the side of the barrier material layer 21' away from the transmissive reflective layer 24, to obtain the barrier layer 21.

[0165] The cross-sectional structure diagram after step S1-5 is completed can be as shown in FIG. 6. Figure 11

[0166] Specifically, a plurality of first through holes 23A can be formed by etching the barrier material layer 21' from top to bottom on the side of the barrier material layer 21' away from the transmissive reflective layer 24 corresponding to the plurality of third specified positions by a dry etching process (for example, an inductively coupled plasma etching process), a plurality of second through holes 23B can be formed by etching the barrier material layer 21' from top to bottom on the side of the barrier material layer 21' away from the transmissive reflective layer 24 corresponding to the plurality of second specified positions, and a plurality of third through holes 23C can be formed by etching the barrier material layer 21' from top to bottom on the side of the barrier material layer 21' away from the transmissive reflective layer 24 corresponding to the plurality of first specified positions, to obtain the barrier layer 21, wherein the barrier layer 21 is the barrier material layer 21' remaining after the through holes 23A / 23B / 23C are etched. Moreover, the plurality of first through holes 23A respectively expose the plurality of first color filter layers 27A, the plurality of second through holes 23B respectively expose the plurality of second color filter layers 27B, and the plurality of third through holes 23C respectively expose the plurality of third color filter layers 27C, so as to ensure that, after the color conversion structure 20 is fixed on the light-emitting side of the light-emitting array structure 10, the light emitted by the light-emitting array structure 10 in each sub-pixel region P1 / P2 / P3 can be emitted in sequence through the corresponding through holes 23A / 23B / 23C and color filter layers 27A / 27B / 27C.

[0167] Step S1-6: Forming a plurality of first color conversion layers 22A in the plurality of first through holes 23A, forming a plurality of second color conversion layers 22B in the plurality of second through holes 23B, and forming a plurality of attenuation filter layers 27D in the plurality of third through holes 23C.

[0168] ​The cross-sectional structure diagram after step S1-6 is shown in FIG. 3B. ​

[0169] Specifically, the color conversion structure 20 can be manufactured by forming the first color conversion layers 22A in the first through holes 23A, forming the second color conversion layers 22B in the second through holes 23B, and forming the attenuation filter layers 27D in the third through holes 23C, respectively, by a photolithography process.

[0170] It should be noted that the specific structure of the micro light emitting device 1 in the embodiment can refer to the specific implementation of the micro light emitting device in the above embodiment, and thus will not be described here.

[0171] As can be seen from the above, the manufacturing method of the micro light emitting device provided in the embodiment can set the color conversion structure on the light emitting side of the light emitting array structure, and set at least one first light emitting unit in each sub-pixel area in each pixel area. The corresponding light emitting unit in the edge area of each sub-pixel area is a second light emitting unit. The micro light emitting device displays by lighting the first light emitting unit. The color conversion structure can convert the light emitted by the light emitting unit for display in each sub-pixel area, to realize full-color display. In this way, each sub-pixel area has both the first light emitting unit and the second light emitting unit, which can expand the area of each sub-pixel area, thereby reducing the shielding of the light emitting surface by the barrier layer, improving the aperture ratio, reducing the absorption of light by the barrier layer, and improving the pixel light emitting brightness of the device. Moreover, since the corresponding light emitting unit in the edge area of each sub-pixel area is a second light emitting unit, the barrier layer in the color conversion structure can extend to the edge area of the sub-pixel area, reducing the alignment accuracy requirement of the through hole on the barrier layer and the sub-pixel area of the light emitting array structure. Therefore, the manufacturing difficulty of the color conversion structure can be reduced, the production efficiency can be improved, and the display effect and performance of the device can be improved, while ensuring the accurate matching of the color conversion structure and the Micro LED light emitting chip array.

[0172] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The features, structures or characteristics described above can be combined in any suitable manner in one or more embodiments.

[0173] The above only describes the preferred embodiments of the present application and does not limit the present application. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.​

Claims

1. A miniature light-emitting device, characterized in that, The application relates to a micro light-emitting device, comprising: a light-emitting array structure, comprising a plurality of light-emitting units, the plurality of light-emitting units comprising a plurality of first light-emitting units and a plurality of second light-emitting units, and the micro light-emitting device displaying by lighting the first light-emitting units; and the light-emitting array structure having a plurality of pixel regions, each of the pixel regions comprising a plurality of sub-pixel regions, each of the sub-pixel regions having at least one of the first light-emitting units, and the corresponding light-emitting units in the edge region of each of the sub-pixel regions being the second light-emitting units; a color conversion structure, arranged on the light-emitting side of the light-emitting array structure, and comprising a barrier layer and a plurality of color conversion layers, wherein the barrier layer is provided with a plurality of through holes, the plurality of color conversion layers are respectively located in the plurality of through holes, and each of the through holes is opposite to a corresponding one of the sub-pixel regions; and the orthographic projection of the barrier layer on the light-emitting array structure is arranged around each of the sub-pixel regions to separate the sub-pixel regions.

2. The micro light emitting device of claim 1, wherein, The light-emitting units in the edge region of each of the sub-pixel regions are the second light-emitting units and are partially located in the edge region of each of the sub-pixel regions.

3. The micro light emitting device of claim 1, wherein, The first light-emitting units in each of the sub-pixel regions are located in the middle region of each of the sub-pixel regions.

4. The micro light emitting device of claim 1, wherein, The plurality of sub-pixel regions comprises a first sub-pixel region, a second sub-pixel region and a third sub-pixel region, wherein the area of the second sub-pixel region is larger than the area of the first sub-pixel region and the area of the third sub-pixel region, the number of the first light-emitting units in the second sub-pixel region is greater than the number of the first light-emitting units in the first sub-pixel region and the number of the first light-emitting units in the third sub-pixel region. The plurality of color conversion layers comprises a plurality of first color conversion layers and a plurality of second color conversion layers, the plurality of through holes comprises a plurality of first through holes, a plurality of second through holes and a plurality of third through holes, the plurality of first color conversion layers are respectively located in the plurality of first through holes, the plurality of second color conversion layers are respectively located in the plurality of second through holes, and each of the first through holes is opposite to a corresponding one of the first sub-pixel regions, each of the second through holes is opposite to a corresponding one of the second sub-pixel regions, and each of the third through holes is opposite to a corresponding one of the third sub-pixel regions.

5. The micro light emitting device of claim 4, wherein, The light emitted by the first light-emitting units in the first sub-pixel region is red light after entering the corresponding first through hole; the light emitted by the first light-emitting units in the second sub-pixel region is green light after entering the corresponding second through hole; and the light emitted by the first light-emitting units in the third sub-pixel region is blue light after entering the corresponding third through hole.

6. The micro light emitting device of claim 4, wherein, The area of the first sub-pixel region is equal to the area of the third sub-pixel region, and the number of the first light-emitting units in the first sub-pixel region is equal to the number of the first light-emitting units in the third sub-pixel region.

7. The micro light emitting device of claim 6, wherein, The area of the second sub-pixel region is equal to twice the area of the third sub-pixel region, and the number of the first light-emitting units in the second sub-pixel region is equal to twice the number of the first light-emitting units in the third sub-pixel region.

8. The micro light emitting device of claim 4, wherein, The first sub-pixel region and the third sub-pixel region have the same shape and size, and are both rectangles with a first ratio of length to width, and the second sub-pixel region is a rectangle with a second ratio of length to width, and the second ratio is twice the first ratio.

9. The micro light emitting device of claim 8, wherein, The first sub-pixel region has one first light emitting unit, and the first light emitting unit in the first sub-pixel region is located at the center of the first sub-pixel region; The second sub-pixel region has two first light emitting units, and one first light emitting unit in the second sub-pixel region is located at the 1 / 2 position in the width direction of the second sub-pixel region and the 1 / 4 position in the length direction of the second sub-pixel region, and the other first light emitting unit in the second sub-pixel region is located at the 1 / 2 position in the width direction of the second sub-pixel region and the 3 / 4 position in the length direction of the second sub-pixel region; The third sub-pixel region has one first light emitting unit, and the first light emitting unit in the third sub-pixel region is located at the center of the third sub-pixel region.

10. The micro light emitting device of claim 4, wherein, The plurality of pixel regions are arranged in rows and columns; the first sub-pixel region and the third sub-pixel region are in the same column of pixel regions, and are alternately and periodically arranged in the column direction; and the first sub-pixel region and the third sub-pixel region as a whole and the second sub-pixel region are in the same row of pixel regions, and are alternately and periodically arranged in the row direction.

11. The micro light emitting device of claim 4, wherein, In each of the pixel regions, the first sub-pixel region and the third sub-pixel region are arranged side by side in the column direction, the first sub-pixel region and the third sub-pixel region as a whole and the second sub-pixel region are arranged side by side in the row direction, and the light emitting units located at the junction of the first sub-pixel region and the second sub-pixel region are all the second light emitting units and are shared by the first sub-pixel region and the second sub-pixel region, and the light emitting units located at the junction of the third sub-pixel region and the second sub-pixel region are all the second light emitting units and are shared by the third sub-pixel region and the second sub-pixel region.

12. The micro light emitting device of claim 4, wherein, The plurality of light emitting units are arranged in rows and columns; each of the pixel regions spans five rows of light emitting units in the column direction, and is respectively recorded as a first row of light emitting units, a second row of light emitting units, a third row of light emitting units, a fourth row of light emitting units and a fifth row of light emitting units in the column direction; Each of the pixel regions spans five columns of light emitting units in the row direction, and is respectively recorded as a first column of light emitting units, a second column of light emitting units, a third column of light emitting units, a fourth column of light emitting units and a fifth column of light emitting units in the row direction; And the first sub-pixel region in each of the pixel regions is an overlapping region between half of the first column of light emitting units, the second column of light emitting units and half of the third column of light emitting units, and half of the first row of light emitting units, the second row of light emitting units and half of the third row of light emitting units. The second sub-pixel region in each of the pixel regions is an overlapping region between the other half of the third column of light emitting units, the fourth column of light emitting units and half of the fifth column of light emitting units, and the other half of the third row of light emitting units, the fourth row of light emitting units and half of the fifth row of light emitting units. The third sub-pixel region in each of the pixel regions is an overlapping region between half of the first column of light emitting units, the second column of light emitting units and half of the third column of light emitting units, and the other half of the third row of light emitting units, the fourth row of light emitting units and half of the fifth row of light emitting units.

13. The micro light emitting device of claim 12, wherein, The first sub-pixel region has one first light emitting unit, and the first light emitting unit in the first sub-pixel region is the light emitting unit belonging to both the second column of light emitting units and the second row of light emitting units. The second sub-pixel region has two first light emitting units, and the two first light emitting units in the second sub-pixel region are respectively the light emitting unit belonging to both the fourth column of light emitting units and the second row of light emitting units, and the light emitting unit belonging to both the fourth column of light emitting units and the fourth row of light emitting units. The third sub-pixel region has one first light emitting unit, and the first light emitting unit in the third sub-pixel region is the light emitting unit belonging to both the second column of light emitting units and the fourth row of light emitting units.

14. The micro light emitting device of claim 4, wherein, The color conversion structure further comprises a transmissive reflective layer, the barrier layer and the transmissive reflective layer are sequentially stacked on the light emitting side of the light emitting array structure, and the transmissive reflective layer is configured to reflect light emitted by the first light emitting unit and transmit other light except the light emitted by the first light emitting unit. Furthermore, the transmissive reflective layer is provided with a plurality of light transmission through holes, and the plurality of light transmission through holes are respectively arranged corresponding to the plurality of third through holes.

15. The micro light emitting device of claim 14, wherein, The color conversion structure further comprises a plurality of first color filter layers, a plurality of second color filter layers and a plurality of third color filter layers, wherein the plurality of first color conversion layers are sequentially stacked in the direction away from the light emitting array structure, the plurality of second color conversion layers are sequentially stacked in the direction away from the light emitting array structure, and the plurality of third color filter layers are at least partially located in the plurality of light transmission through holes.

16. The micro light emitting device of claim 15, wherein, The color conversion structure further comprises a plurality of attenuation filter layers, the plurality of attenuation filter layers are respectively located in the plurality of third through holes, and the plurality of attenuation filter layers are sequentially stacked in the direction away from the light emitting array structure.

17. The micro light emitting device of claim 1, wherein, The micro light emitting device further comprises an adhesive layer, the adhesive layer is located between the color conversion structure and the light emitting array structure, and connects the color conversion structure and the light emitting array structure together.

18. A method of fabricating a micro light emitting device, comprising: Comprise: The light-emitting array structure comprises a plurality of light-emitting units, the plurality of light-emitting units comprise a plurality of first light-emitting units and a plurality of second light-emitting units, and the micro light-emitting device displays by lighting the first light-emitting units; and the light-emitting array structure has a plurality of pixel regions, each of the pixel regions comprises a plurality of sub-pixel regions, at least one of the first light-emitting units is arranged in each of the sub-pixel regions, and the light-emitting units corresponding to the edge regions of the sub-pixel regions are the second light-emitting units; A color conversion structure is arranged on the light-emitting side of the light-emitting array structure, the color conversion structure comprises a barrier wall layer and a plurality of color conversion layers, wherein the barrier wall layer is provided with a plurality of through holes, the plurality of color conversion layers are respectively arranged in the plurality of through holes, and each of the through holes is opposite to a corresponding one of the sub-pixel regions; and the orthographic projection of the barrier wall layer on the light-emitting array structure is arranged around each of the sub-pixel regions to separate the sub-pixel regions.

19. The method of claim 18, wherein the micro light emitting device is formed by a process comprising: The color conversion structure arranged on the light-emitting side of the light-emitting array structure comprises: Providing a color conversion structure; Fixing the color conversion structure on the light-emitting side of the light-emitting array structure, and making each of the through holes face the light-emitting side surface of the light-emitting array structure in the corresponding one of the sub-pixel regions.

20. The method of claim 19, wherein the micro light emitting device is fabricated by a process comprising: The color conversion structure comprises: Providing a substrate, and forming a transmissive reflective layer on one side of the substrate; Respectively forming a plurality of light-transmitting through holes penetrating through the transmissive reflective layer on the side, away from the substrate, of the transmissive reflective layer corresponding to a plurality of first specified positions; Respectively forming a plurality of first color filter layers on the side, away from the substrate, of the transmissive reflective layer corresponding to a plurality of third specified positions, respectively forming a plurality of second color filter layers on the side, away from the substrate, of the transmissive reflective layer corresponding to a plurality of second specified positions, and forming a plurality of third color filter layers on the bottom wall surface of the plurality of light-transmitting through holes; Forming a barrier wall material layer on the side, away from the transmissive reflective layer, of the barrier wall material layer, the barrier wall material layer covering the plurality of first color filter layers, the plurality of second color filter layers and the plurality of third color filter layers; Respectively forming a plurality of first through holes on the side, away from the transmissive reflective layer, of the barrier wall material layer corresponding to the plurality of third specified positions, respectively forming a plurality of second through holes on the side, away from the transmissive reflective layer, of the barrier wall material layer corresponding to the plurality of second specified positions, and respectively forming a plurality of third through holes on the side, away from the transmissive reflective layer, of the barrier wall material layer corresponding to the plurality of first specified positions, to obtain a barrier wall layer; Respectively forming a plurality of first color conversion layers in the plurality of first through holes, respectively forming a plurality of second color conversion layers in the plurality of second through holes, and respectively forming a plurality of attenuation filter layers in the plurality of third through holes.

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