Focused ultrasound system with multiple treatment modalities
By designing a combination of ultrasonic transducer, signal generation module and energy amplification module, the problem of integrating thermal ablation and tissue destruction modes in existing technologies has been solved. This enables efficient switching and flexible operation of multiple modes in the same device, reducing costs and improving device reliability.
Patent Information
- Application Number
- CN202511445334.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-11
- Publication Date
- 2025-12-16
- Estimated Expiration
- 2045-10-11
AI Technical Summary
Existing technologies cannot combine both thermal ablation and tissue destruction focused ultrasound treatment modes in the same device, resulting in high equipment costs and inconvenient operation. The main challenge lies in the significant differences in the ultrasound drive circuit parameters required for the two modes, making it difficult to integrate them into the same circuit system.
A focused ultrasound system with multiple treatment modes was designed. By combining an ultrasound transducer, a signal generation module, an energy amplification module, and a control module, the ultrasound drive signal for switching different treatment modes is realized in the same circuit system. This includes the design of an isolation drive circuit and a power amplification circuit. By using a combination of an isolation boost power supply circuit and a MOSFET, the circuit can be made to operate stably under high voltage and high current.
It enables efficient switching between thermal ablation and tissue destruction modes within the same device, reducing equipment costs, simplifying operation, improving equipment reliability and flexibility, and meeting the needs of multimodal focused ultrasound therapy.
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Figure CN120919551B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of medical equipment technology, and in particular to a focused ultrasound system with multiple treatment modes. Background Technology
[0002] Focused ultrasound (FUS) is a medical technology that utilizes the physical properties of ultrasound waves to achieve precise energy delivery. The principle of FUS therapy lies in focusing low-energy ultrasound waves onto a target area within the body (such as a tumor) using an ultrasound transducer. This focused energy achieves a high energy density, triggering physical and biological effects in the target tissue, including thermal, cavitation, and mechanical effects. The thermal effect refers to the absorption of focused ultrasound waves by the tissue, which is converted into heat energy, causing a rapid increase in local tissue temperature and leading to tissue necrosis. The cavitation effect refers to the generation of tiny bubbles (cavitation nuclei) in the tissue by focused ultrasound waves. The rapid expansion and collapse of these bubbles generate shock waves that can mechanically damage cell structures. The mechanical effect refers to the direct disturbance and destruction of tissue structure caused by the mechanical vibrations of ultrasound waves.
[0003] Currently, focused ultrasound (FIG) thermal ablation devices typically operate at peak sound pressure levels of several megapascals (MPA) and generally function in a continuous-operation, intermittent-load mode. Their power output is typically between tens and hundreds of watts. The FIG thermal ablation mode generally requires relatively low operating voltage, but the operating current is typically between several and tens of amperes. Furthermore, in recent years, with advancements in treatment technology, high-sound-pressure short-pulse FIG therapy has emerged. This technology utilizes high-intensity focused ultrasound waves to create cavitation effects in tissues, causing tissue fragmentation or homogenization. Achieving this technology requires generating sound pressure levels of tens of MPA or even higher at the focal point within a short time, thus posing a greater challenge to the implementation of the FIG transducer drive circuit. This is reflected in the need for the drive circuit to operate at high voltage in a short-pulse mode. Both modes have demonstrated effective and safe treatment results in clinical use.
[0004] However, the use of both modes typically requires the separate configuration of corresponding focused ultrasound therapy equipment, which is costly and inconvenient to operate. To facilitate efficient use of both modes and reduce costs, there is a need in the industry to develop focused ultrasound therapy equipment that combines both modes.
[0005] However, in reality, due to the significant differences in the voltage, current, and other parameters of the power supply used by the ultrasound drive circuit 130 required by the two modes, it is difficult to integrate the two drive circuits 130 into the same circuit system. Therefore, realizing a focused ultrasound therapy device that can combine both modes presents great technical difficulties and challenges. Summary of the Invention
[0006] In view of the shortcomings of the prior art described above, the purpose of this disclosure is to provide a focused ultrasound system with multiple treatment modes to solve the problems in the related art.
[0007] The first aspect of this disclosure provides a focused ultrasound system with multiple treatment modes, comprising: an ultrasound transducer; an ultrasound drive module coupled to the ultrasound transducer, comprising: a signal generation module configured to output a first ultrasound generation signal with signal parameters suitable for a thermal ablation mode or a second ultrasound generation signal with signal parameters suitable for a tissue destruction mode; and an energy amplification module comprising: a signal terminal, a power supply terminal, and an output terminal coupled to the ultrasound transducer; the signal terminal being coupled to the signal generation module; the power supply terminal being used to receive a first power supply signal with electrical parameters suitable for a thermal ablation mode or a second power supply signal suitable for a tissue destruction mode; and the output terminal being used to output a first ultrasound drive signal obtained by amplifying the first ultrasound generation signal with the first power supply signal, or to output a second ultrasound drive signal obtained by amplifying the second ultrasound generation signal with the second power supply signal; wherein the ultrasound transducer is excited by the first ultrasound drive signal or the second ultrasound drive signal to output focused ultrasound suitable for a thermal ablation mode or a tissue destruction mode.
[0008] In an embodiment of the first aspect, the energy amplification module includes at least one energy amplification circuit, comprising: an isolation drive circuit including a signal input terminal coupled to the signal terminal and a pair of signal output terminals, wherein the input ultrasonic generation signal is used to output opposite first switch drive signals and second switch drive signals at the pair of signal output terminals; and a power amplification circuit including: a first switch unit coupled between the output terminal and ground, and a second switch unit coupled between the power supply terminal and the output terminal; the first switch unit and the second switch unit are also coupled to the pair of signal output terminals of the isolation drive circuit, so that they are respectively set to opposite switching states by the first switch drive signal and the second switch drive signal to form voltage changes in the first ultrasonic drive signal or the second ultrasonic drive signal at the output terminal.
[0009] In an embodiment of the first aspect, the isolated transmission unit includes: a pair of isolated input terminals, each connected to the signal input terminal via a branch; an inverter disposed on one of the branch lines to generate opposite signals to the pair of isolated input terminals; and a pair of isolated output terminals, which are isolated and coupled to the pair of isolated input terminals for signal transmission, and the pair of isolated output terminals are respectively connected to the first drive signal generation unit and the second drive signal generation unit.
[0010] In an embodiment of the first aspect, the energy amplification module further includes: an isolated boost power supply circuit, used to supply power to the isolated drive circuit using the supply voltage of the connected power supply and its boost voltage, so that the first switch drive signal and the second switch drive signal can drive the first switch drive unit and the second switch drive unit to conduct.
[0011] In a first aspect embodiment, the isolated boost power supply circuit includes:
[0012] The first driving power supply circuit includes: a first diode whose positive and negative terminals are respectively coupled to the power supply and the first power supply terminal of the isolation driving circuit, so as to provide power for the generation of the first switch driving signal;
[0013] The second drive power supply circuit includes: a second diode whose positive and negative terminals are respectively coupled to the negative terminal of the first diode and the second power supply terminal of the isolation drive circuit, so as to provide power for the generation of the second switch drive signal; and a bootstrap capacitor coupled between the negative terminal of the second diode and the output terminal, so as to cooperate with the second diode to form a bootstrap boost when the second switch unit is turned on.
[0014] In an embodiment of the first aspect, the focused ultrasound system includes at least one of the following: 1) the first diode is connected in parallel with a first filter capacitor; 2) the second diode has a maximum reverse voltage > 500V and a reverse recovery time of less than 50ns; 3) the bootstrap capacitor has a withstand voltage of 500V or more and a capacitance range of 0.1uF to 10uF.
[0015] In a first aspect embodiment, the energy amplification module further includes:
[0016] An isolated power supply circuit, coupled to the power supply terminal and the second switching unit, includes a third diode connected in series and at least one second filter capacitor; the positive terminal of the third diode is coupled to the power supply terminal, the negative terminal is coupled to the filter capacitor to ground, and coupled to the second switching unit to supply power.
[0017] In a first aspect embodiment, the first switching unit includes a first MOS transistor, and the second switching unit includes a second MOS transistor connected in series with the first MOS transistor; the gates of the second MOS transistor and the first MOS transistor are respectively coupled to a signal output terminal; the common junction of the second MOS transistor and the first MOS transistor is led out to the output terminal.
[0018] In the embodiment of the first aspect, the second MOSFET and the first MOSFET have a withstand voltage of 500V or higher and an on-resistance of 5Ω or lower.
[0019] In an embodiment of the first aspect, the gate of the second MOS transistor and / or the first MOS transistor is coupled to an isolation drive circuit via a bleed diode, wherein the positive and negative terminals of the bleed diode are respectively coupled to the gate and the isolation drive circuit; and / or, the gate of the second MOS transistor and / or the first MOS transistor is connected to the isolation drive circuit via a gate drive resistor; and / or, the gate of the second MOS transistor and / or the first MOS transistor is also coupled to ground via a gate pull-down resistor.
[0020] In an embodiment of the first aspect, a spike absorption circuit is coupled between the drain and source of the second MOS transistor and / or the first MOS transistor; the spike absorption circuit includes an absorption capacitor and a release resistor connected in series; the release resistor is configured to dampen the resonance of the absorption capacitor and the line inductance.
[0021] As described above, this disclosure relates to the field of medical equipment technology, providing a focused ultrasound system with multiple treatment modes. The system includes: an ultrasound transducer; a drive circuit including a signal generation module that outputs a first ultrasound generation signal suitable for a thermal ablation mode or a second ultrasound generation signal suitable for a tissue destruction mode; an energy amplification module including: a signal terminal, a power supply terminal, and an output terminal coupled to the ultrasound transducer; the energy amplification module including: an isolation drive circuit that outputs opposite first and second switching drive signals based on the input ultrasound generation signals; and a power amplification circuit including: a second switching unit and a first switching unit that are set to opposite switching states by opposite drive signals to output ultrasound drive signals to excite the ultrasound transducer to form focused ultrasound in a tissue destruction mode or a thermal ablation mode. The drive circuit has a simple structure and is easy to implement, and can handle the power supply requirements of multiple modes such as thermal ablation and tissue destruction, thus meeting the reliability requirements of multi-mode focused ultrasound treatment equipment. Attached Figure Description
[0022] Figure 1 A schematic diagram of the circuit module of a focused ultrasound system with multiple treatment modes is shown in one embodiment of the present disclosure.
[0023] Figure 2 A schematic diagram of the circuit module of the energy amplification circuit in one embodiment of the present disclosure is shown.
[0024] Figure 3 A schematic diagram of an isolated boost power supply circuit according to one embodiment of this disclosure is shown.
[0025] Figure 4 A schematic diagram of the isolated power supply circuit described in one embodiment of this disclosure is shown.
[0026] Figure 5 A schematic diagram of the power amplifier circuit described in one embodiment of this disclosure is shown.
[0027] Figure 6A schematic diagram of the circuit principle of the energy amplification module in one embodiment of this disclosure is shown.
[0028] Figure 7 A schematic diagram of the circuit structure of a focused ultrasound system is shown in yet another embodiment of this disclosure.
[0029] Figure 8 A schematic diagram of a partitioned isolation layout on a circuit-carrying component is shown in one embodiment of this disclosure.
[0030] Figure 9 A schematic diagram of the structure of a circuit-carrying component that implements isolated transmission is shown in one embodiment of the present disclosure. Detailed Implementation
[0031] The following specific examples illustrate the implementation of this disclosure. Those skilled in the art can easily understand other advantages and effects of this disclosure from the information disclosed herein. This disclosure can also be implemented or applied through other different specific embodiments, and various details in this disclosure can be modified or changed according to different viewpoints and application modules without departing from the spirit of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be combined with each other.
[0032] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this disclosure pertains can readily implement it. This disclosure may be embodied in many different forms and is not limited to the embodiments described herein.
[0033] In this disclosure, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic represented in connection with that embodiment or example is included in at least one embodiment or example of this disclosure. Furthermore, the specific features, structures, materials, or characteristics represented may be combined in any suitable manner in any one or a group of embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples represented in this disclosure, as well as the features of those different embodiments or examples.
[0034] Furthermore, the terms "first" and "second" are used for illustrative purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the representation of this disclosure, "a set" means two or more, unless otherwise explicitly specified.
[0035] For the purpose of clarity, devices unrelated to the description are omitted, and the same or similar components throughout the specification are given the same reference numerals.
[0036] Throughout this specification, when it is said that a device is "coupled" to another device, this includes not only "direct coupling" but also "indirect coupling" by placing other components in between. Furthermore, when it is said that a device "comprises" a certain constituent element, unless otherwise stated otherwise, this does not exclude other constituent elements, but rather implies that other constituent elements may be included.
[0037] While the terms first, second, etc., are used in some examples herein to refer to various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, first interface and second interface, etc., are used. Furthermore, as used herein, the singular forms “a,” “an,” and “the” are intended to also include the plural forms unless the context indicates otherwise. It should be further understood that the terms “comprising,” “including,” indicate the presence of the stated feature, step, operation, element, module, item, kind, and / or group, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, modules, items, kinds, and / or groups. The terms “or” and “and / or” as used herein are interpreted as inclusive, or mean any one or any combination thereof. Thus, “A, B, or C” or “A, B, and / or C” means “any one of: A; B; C; A and B; A and C; B and C; A, B, and C.” Exceptions to this definition will only occur if the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.
[0038] The technical terms used herein are for reference only to specific embodiments and are not intended to limit the scope of this disclosure. The singular form used herein includes the plural form unless the statement explicitly indicates otherwise. The word "comprising" as used in this specification means to specify a particular characteristic, region, integer, step, operation, element, and / or component, and does not exclude the presence or addition of other characteristics, regions, integers, steps, operations, elements, and / or components.
[0039] Although not explicitly defined, all terms, including technical and scientific terms used herein, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries shall be further interpreted as having a meaning consistent with the relevant technical literature and the message of the present disclosure, and shall not be over-interpreted as having an ideal or overly formulaic meaning unless otherwise defined.
[0040] Currently, focused ultrasound (FIG) thermal ablation devices typically operate at peak sound pressure levels of several megapascals (MPA) and generally function in a continuous-operation, intermittent-load mode. Their power output is typically between tens and hundreds of watts. The FIG thermal ablation mode generally requires relatively low operating voltage, but the operating current is typically between several and tens of amperes. Furthermore, in recent years, with advancements in treatment technology, high-sound-pressure short-pulse FIG therapy has emerged. This technology utilizes high-intensity focused ultrasound waves to create cavitation effects in tissues, causing tissue fragmentation or homogenization. Achieving this technology requires generating sound pressure levels of tens of MPA or even higher at the focal point within a short time, thus posing a greater challenge to the implementation of the FIG transducer drive circuit. This is reflected in the need for the drive circuit to operate at high voltage in a short-pulse mode. Both modes have demonstrated effective and safe treatment results in clinical use.
[0041] However, the use of both modes typically requires the separate configuration of corresponding focused ultrasound therapy equipment, which is costly and inconvenient to operate. To facilitate efficient use of both modes and reduce costs, there is a need in the industry to develop focused ultrasound therapy equipment that combines both modes.
[0042] However, in reality, the voltage, current, and other parameters of the power supply circuits required for the two modes differ significantly. For example, thermal ablation requires medium-intensity continuous ultrasound, which necessitates a power supply with medium voltage and high current. Tissue destruction requires high-intensity pulsed ultrasound output, requiring a high-voltage power supply. To make a single focused ultrasound therapy device compatible with both modes, the ultrasound drive circuit needs to withstand high voltage and high current, which is extremely difficult to achieve. Therefore, realizing a focused ultrasound therapy device that can support both modes presents significant technical challenges.
[0043] In view of this, the present disclosure provides a focused ultrasound system with multiple treatment modes to solve the problems in the related art.
[0044] The following is a definition of some terms used in the embodiments of this application:
[0045] Focused Ultrasound (FUS) uses a high-intensity ultrasound beam to precisely focus on a specific target area (such as a tumor or lesion) within the body. This energy is converted into heat or other biological effects to achieve therapeutic goals. This technology combines the advantages of image guidance, precise localization, and localized treatment. The advantages of FUS include: non-invasiveness, high precision, high repeatability, and minimal side effects. Major applications include: cancer treatment, cosmetic and rehabilitation, neurological diseases, and other applications. For example, cancer treatment includes, but is not limited to, solid tumors such as uterine fibroids, liver cancer, breast cancer, prostate cancer, and pancreatic cancer. Cosmetic and rehabilitation applications include, but are not limited to: anti-aging and skin tightening (thermal effects cause collagen fibers to contract and initiate repair mechanisms, stimulating the synthesis of new collagen), fat ablation (mechanical effects destroy fat cell membranes), and non-invasive body sculpting. Other applications include, but are not limited to: essential tremor, osteoarthritis, and pain management.
[0046] Thermal ablation refers to the conversion of the acoustic energy of focused ultrasound into thermal energy, generating high temperatures that cause coagulation and necrosis of the target tissue.
[0047] Tissue destruction technique: refers to using the mechanical or cavitation effects of focused ultrasound to cause tissue fragmentation or homogenization in the target area.
[0048] Figure 1 A schematic diagram of the circuit module of a focused ultrasound system with multiple treatment modes is shown in one embodiment of the present disclosure.
[0049] The focused ultrasound system 100 has a thermal ablation mode and a tissue destruction mode, and can generate corresponding focused ultrasound output according to the selected irradiation mode to irradiate the target tissue.
[0050] Specifically, in Figure 1 The focused ultrasound system 100 includes an ultrasonic transducer 110, a power supply module 120, a drive circuit 130, and a control module 140. The drive circuit 130 includes a signal generation module 1310 and an energy amplification module 1320.
[0051] The ultrasonic transducer 110 includes one or more transducer elements. The transducer element may be a piezoelectric crystal element (such as piezoelectric ceramic or composite material), which can convert electrical energy into ultrasonic energy generated by mechanical vibration. One or more of the transducer elements can form one or more array elements. A self-focusing ultrasonic transducer includes one or several array elements. A multi-channel phased array transducer may include dozens to hundreds of array elements, enabling better flexibility in adjusting the direction or focus of the sound beam. Preferably, the ultrasonic transducer 110 in this embodiment is implemented as a multi-channel phased array ultrasonic transducer.
[0052] The power module 120 can provide a first power signal with power parameters suitable for the thermal ablation mode, such as medium voltage and high current. Alternatively, it can output a second power signal suitable for the tissue destruction mode, such as high voltage and low current. The electrical parameters of the first and second power signals are adjustable. The power module 120 can be connected to and controlled by the control module 140 to output the power signals. In some embodiments, the power module 120 may include an adjustable wide-range power supply that can be adjusted to output the first and second power signals. Alternatively, the power module 120 may also include multiple power supply units to output the first and second power signals respectively. In some optional embodiments, the voltage amplitude range of the first power signal output by the power module 120 is 0~100V, or 10V~60V. Optionally, the voltage amplitude range of the second power signal output by the power module 120 is 10V~1000V, or 15V~300V. Optionally, the sound pressure level in the thermal ablation mode is below 10 MPa; and / or, the first duty cycle in the thermal ablation mode is ≥20%.
[0053] The signal generation module 1310 is configured to output a first ultrasound generation signal with signal parameters suitable for either a thermal ablation mode or a second ultrasound generation signal for a tissue destruction mode. In some embodiments, the first ultrasound generation signal is an alternating signal with a high duty cycle (e.g., ≥20%), and the second ultrasound generation signal is a pulse signal with an extremely low duty cycle (e.g., 0.05%~2%). Specifically, the signal generation module 1310 can be coupled to the control module 140 and is adapted to controllably output an ultrasound generation signal. The ultrasound generation signal includes signal parameters of the generated focused ultrasound, including parameters such as frequency and duty cycle. In some embodiments, the signal parameters can be externally set and input to the control module 140, and the control module 140 instructs the signal generation module 1310 to generate a corresponding ultrasound generation signal based on the signal parameters. For example, by combining the working mechanisms of different irradiation modes, the ultrasound generation signal can provide the emission timing for different irradiation modes. In some embodiments, for a self-focusing single-channel or conventional multi-channel ultrasonic transducer 110, the signal generation unit can be implemented to generate the desired frequency signal through a processor (such as an MCU, DSP, etc.) combined with a direct digital frequency synthesis (DDS) circuit or other frequency generation circuit. In other embodiments, for a multi-channel phased-array focusing transducer, a processing module such as an FPGA can be used to output tens to hundreds of ultrasonic generation signals, which are then amplified by the energy amplification module 1320 and output to the corresponding array elements of the ultrasonic transducer 110. Exemplarily, the signal frequency generated by the signal generation module 1310 can be between 0.5 and 6 MHz, and ideally, the signal resolution can be less than 1 kHz.
[0054] The energy amplification module 1320 includes a signal terminal, a power supply terminal, and an output terminal coupled to the ultrasound transducer 110; the signal terminal is coupled to the signal generation module 1310. The power supply terminal can be coupled to a power module 120 for receiving a first power signal with electrical parameters suitable for a thermal ablation mode or a second power signal suitable for a tissue destruction mode. The energy amplification module 1320 includes at least one energy amplification circuit 13210, which can amplify the first ultrasound generation signal using the energy of the first power signal to obtain a first ultrasound drive signal suitable for a thermal ablation mode; or, it can amplify the second ultrasound generation signal using the energy of the second power signal to obtain a second ultrasound drive signal suitable for a tissue destruction mode. The first ultrasound drive signal is output to the ultrasound transducer 110, which can stimulate the ultrasound transducer 110 to output focused ultrasound output for thermal ablation mode treatment. The second ultrasound drive signal is output to the ultrasound transducer 110, which can stimulate the ultrasound transducer 110 to output focused ultrasound output suitable for tissue destruction mode treatment.
[0055] The control module 140 can control the power module 120 and the signal generation module 1310 to output signals in coordination according to the determined treatment mode, so as to generate the first ultrasound driving signal output by focused ultrasound corresponding to the thermal ablation mode, or the second ultrasound driving signal output by focused ultrasound corresponding to the tissue destruction mode. In some embodiments, the control module 140 may include a microcontroller (MCU), SoC, or FPGA, etc., and communicate with an external device (such as a host computer) to receive relevant instructions sent by the external device to control the operation of the focused ultrasound system 100. In other embodiments, the control module 140 may also be implemented in an external device, such as a host computer as the control module 140, communicating with the focused ultrasound system 100 and implementing control through a communication interface (such as RS485 / 232 serial port).
[0056] In some optional embodiments, the tissue destruction mode includes: a first tissue destruction mode, wherein the positive peak value of the second sound pressure level in the first tissue destruction mode is higher than the positive peak value of the first sound pressure level in the thermal ablation mode, and the second duty cycle in the first tissue destruction mode is lower than the first duty cycle in the thermal ablation mode. A second tissue destruction mode, wherein the absolute value of the negative peak value of the third sound pressure level in the second tissue destruction mode is higher than the positive peak value of the first sound pressure level, the third duty cycle in the second tissue destruction mode is lower than the first duty cycle, and the period duration in the second tissue destruction mode is shorter than the period duration in the first tissue destruction mode. As an example, the value of the second sound pressure level in the first tissue destruction mode is above 60 MPa; and / or, the range of the second duty cycle in the first tissue destruction mode is 0.5% to 2%; and / or, the signal period duration in the first tissue destruction mode is 0.1 s to 1 s. As an example, the third sound pressure level in the second organization destruction mode is below -20 MPa; and / or, the third duty cycle in the second organization destruction mode is between 0.05% and 1%; and / or, the signal period duration in the second organization destruction mode is below 10 ms.
[0057] Please see Figure 2 The diagram shows a schematic of the circuit module of the energy amplifier circuit 13210 in one embodiment of the present disclosure.
[0058] The energy amplifier circuit 13210 includes: an isolation drive circuit 13211 and a power amplifier circuit 13212.
[0059] The isolation drive circuit 13211 is used to amplify the input ultrasound generation signal into a switching drive signal sufficient to drive the switching unit in the power amplifier circuit 13212 to turn on / off. Specifically, the isolation drive circuit 13211 includes a signal input terminal coupled to the signal terminal and a pair of signal output terminals, and outputs opposite first and second switching drive signals at the pair of signal output terminals based on the input ultrasound generation signal. In some embodiments, the isolation drive circuit 13211 further includes an inverter 132111, an isolation transmission unit 132112, a first drive signal generation unit 132113, and a second drive signal generation unit 132114. The ultrasonic generated signal (such as the first ultrasonic generated signal or the second ultrasonic generated signal) enters the isolation drive circuit 13211 from the signal input terminal and is divided into two paths. One path remains positive, and the other path is inverted by the inverter 132111 (in the example, the inverter 132111 and the first drive signal generation unit 132113 are connected in a front-to-back stage, but this can be changed in practice) to realize a pair of opposite signals. The isolation transmission unit 132112 includes a pair of isolated input terminals and one-to-one isolated coupled isolated output terminals. The two opposite signals enter the isolation transmission unit 132112 from one of the isolated input terminals for isolated signal transmission and then are transmitted to their respective coupled isolated output terminals so that the two isolated output terminals can output two paths. A pair of isolated output terminals are respectively connected to the first drive signal generation unit 132113 and the second drive signal generation unit 132114, so as to set the first drive signal generation unit 132113 and the second drive signal generation unit 132114 to opposite switching states based on opposite signals, so as to respectively drive the first switch drive signal and the second switch drive signal. In some embodiments, the isolated transmission unit 132112 can be implemented as optically coupled isolation, magnetically coupled isolation or other isolated transmission components.
[0060] The first and second switch drive signals have different amplitudes than the ultrasonic generated signal, but their frequency, duty cycle, and other signal parameters are the same. The first drive signal generation unit 132113 and the second drive signal generation unit 132114 may each have a first power supply terminal 1321131 and a second power supply terminal 1321141 to obtain a power supply input. The two drive signal generation units may each include a switching element (such as a MOS), which can be turned on by opposite signals to output the first and second switch drive signals amplified by the power supply. In some embodiments, the isolation drive circuit 13211 may include a half-bridge isolated drive chip.
[0061] The power amplifier circuit 13212 includes a second switching unit 132122 coupled between the power supply terminal and the output terminal, and a first switching unit 132121 coupled between the output terminal and ground. The second switching unit 132122 and the first switching unit 132121 are coupled to a pair of signal output terminals of the isolation drive circuit 13211, respectively, to be set to opposite switching states by the first switching drive signal and the second switching drive signal to form a voltage change in the first ultrasonic drive signal or the second ultrasonic drive signal at the output terminal. Specifically, when the first switching drive signal turns on the second switching unit 132122, the second switching drive signal will turn off the first switching unit 132121, and the first or second power signal connected to the power supply terminal will be guided to be output at the output terminal, presenting a high-amplitude voltage. Alternatively, when the second switching drive signal turns on the second switching unit 132122, the second switching drive signal will turn off the first switching unit 132121, and the output terminal ground is pulled low. Since the signal parameters of the first switch drive signal and the second switch drive signal come from the ultrasonic generation signal, the first / second ultrasonic drive signal formed by the first switch drive signal and the second switch drive signal controlling the switch will have a voltage amplitude corresponding to the first / second power supply signal and signal parameters corresponding to the first / second ultrasonic generation signal. This enables the energy of the first / second power supply signal to amplify the corresponding first / second ultrasonic generation signal to obtain the corresponding first / second ultrasonic drive signal.
[0062] In order to output a first switch drive signal and a second switch drive signal with amplitudes capable of driving the second switch unit 132122 and the first switch unit 132121 of the subsequent stage to conduct, in some embodiments, the energy amplification circuit 13210 may also be configured as a power supply circuit for powering the isolation drive circuit 13211. Optionally, the energy amplification module may have a first power supply terminal for generating the power supply for the first switch drive signal and a second power supply terminal for generating the power supply for the second switch drive signal. As an example, the first power supply terminal and the second power supply terminal may be led out from two switching elements in the isolation drive circuit 13211.
[0063] The amplitude of the power supply can be determined based on the voltage amplitude required for the switching units in the power amplifier circuit 13212 to turn on / off. In some embodiments, considering the cost of the power supply, a power supply with a relatively low output voltage can be used, and the power supply circuit can be implemented as an isolated boost power supply circuit 13213, used to supply power to the isolated drive circuit 13211 respectively by the input power supply voltage and its boosted voltage, so that the first switch drive signal and the second switch drive signal generated by it can drive the second switch unit 132122 and the first switch unit 132121 to turn on respectively. Specifically, the amplitude of the original power supply voltage is sufficient to drive the second switch unit 132122 on the corresponding low voltage side to turn on, and the amplitude of the boosted voltage after the power supply voltage is boosted by the isolated boost power supply circuit is sufficient to drive the first switch unit 132121 on the corresponding high voltage side to turn on.
[0064] By supplying power to the high and low side second switching unit 132122 and the first switching unit 132121 through the isolation boost power supply circuit 13213, a wide adjustable voltage range between the voltage amplitude of the first / second power supply signal from ground can be achieved, thereby well meeting the voltage range requirements of multiple treatment modes (such as tissue destruction mode and thermal ablation mode).
[0065] like Figure 3 The diagram shown illustrates the structure of an isolated boost power supply circuit 13213 in one embodiment of this disclosure.
[0066] exist Figure 3 The isolated boost power supply circuit 13213 shown in the figure includes a first drive power supply circuit 132131 and a second drive power supply circuit 132132.
[0067] The first drive power supply circuit 132131 includes a first diode 1321311, whose positive and negative terminals are respectively coupled to the power supply and the first power supply terminal of the isolation drive circuit 13211, to provide power for generating the first switch drive signal. As an example, a first filter capacitor 1321312 is connected in parallel with the first diode 1321311.
[0068] The second drive power supply circuit 132132 includes a second diode 1321321 and a bootstrap capacitor 1321322. The positive and negative terminals of the second diode 1321321 are respectively coupled to the negative terminal of the isolation first diode 1321311 and the second power supply terminal of the drive circuit to provide power for the generation of the second switch drive signal. The bootstrap capacitor 1321322 is coupled between the negative terminal of the second diode 1321321 and the output terminal to cooperate with the second diode 1321321 to form a bootstrap circuit, so as to generate a boost voltage compared with the power supply voltage when the second switch unit 132122 changes from off to on, and supply power to the second power supply terminal to meet the higher drive voltage required for driving the high-side second switch unit 132122 in the series-connected high and low side switch units to control its on / off state.
[0069] Specifically, when the second switching unit 132122 is not turned on, the first switching unit 132121 is turned on, which pulls down the output level, causing the power supply to charge the bootstrap capacitor 1321322 to the supply voltage. Then, when the second switching unit 132122 is turned on, the first switching unit 132121 is turned off, allowing the voltage of the first / second power supply signal to be guided to the output, raising the voltage at the lower end of the bootstrap capacitor. Due to the characteristic that capacitor voltage cannot change abruptly, the voltage at the upper end of the bootstrap capacitor is correspondingly raised, thus boosting the supply voltage to form a boosted voltage higher than the supply voltage.
[0070] Back Figure 2 Optionally, the energy amplification circuit 13210 may further include an isolation power supply circuit 13214 connected between the power supply terminal and the power amplification circuit 13212, for isolatingly outputting the first power signal / second power signal to the power amplification circuit 13212. Optionally, the isolation power supply circuit 13214 may also filter the first power signal / second power signal.
[0071] Specifically, such as Figure 4 The diagram shows a schematic of the isolated power supply circuit 13214 according to an embodiment of this disclosure. The isolated power supply circuit 13214 is coupled to the power supply terminal and the power amplifier circuit 13212. As an example, the isolated power supply circuit 13214 includes a third diode 132141 connected in series and at least one second filter capacitor 132142. The positive terminal of the third diode 132141 is coupled to the power supply terminal, and the negative terminal is coupled to the filter capacitor to ground and to the second switching unit 132122 for power supply. Utilizing the unidirectional conduction characteristic of the third diode 132141, output can be restricted to the power amplifier module only, while the power amplifier module 1320 cannot output externally through the power supply terminal, thus achieving isolation of the power amplifier module 1320 from the power supply terminal.
[0072] like Figure 5 The diagram shown illustrates the structure of the power amplifier circuit 13212 according to one embodiment of this disclosure.
[0073] The second switching unit 132122 may include a second MOSFET 1321221, and the first switching unit 132121 may include a first MOSFET 1321211 connected in series with the second MOSFET 1321221. As an example, the second MOSFET 1321221 and the first MOSFET 1321211 are of the same type, such as NMOS, and the series connection can be a drain-source connection between the two MOSFETs. The gates of the second MOSFET 1321221 and the first MOSFET 1321211 are respectively coupled to a signal output terminal to obtain the input of the second switching drive signal and the first switching drive signal, respectively. The common junction of the second MOSFET 1321221 and the first MOSFET 1321211 is led out to the output terminal.
[0074] Optionally, the gates of the second MOSFET 1321221 and / or the first MOSFET 1321211 are coupled to the isolation drive circuit 13211 via a discharge diode. This allows for instantaneous discharge of gate charge, enabling the MOSFET to quickly turn off, thereby reducing losses and shoot-through risk. The positive and negative terminals of the discharge diode are respectively coupled to the gate and the isolation drive circuit 13211. The gates of the second MOSFET 1321221 and / or the first MOSFET 1321211 are connected to the isolation drive circuit 13211 via a gate drive resistor. Figure 5 As illustrated, the gate of the second MOSFET 1321221 can be coupled to the isolation drive circuit 13211 via the second bleeder diode 1321222 and the second gate drive resistor 1321223, respectively. Similarly, the gate of the first MOSFET 1321211 can be coupled to the isolation drive circuit 13211 via the first bleeder diode 1321212 and the first gate drive resistor 1321213, respectively. Optionally, the gates of the second MOSFET 1321221 and / or the first MOSFET 1321211 are also coupled to ground via gate pull-down resistors. Figure 5 As shown in the example, the gate of the second MOSFET 1321221 is coupled to the second gate pull-down resistor 1321224 to ground, and the gate of the first MOSFET 1321211 is coupled to the first gate pull-down resistor 1321214 to ground.
[0075] Optionally, a spike absorption circuit is coupled between the drain and source of the second MOSFET 1321221 and / or the first MOSFET 1321211 to absorb voltage spikes. As an example, the spike absorption circuit includes a series-connected absorption capacitor and a release resistor. The absorption capacitor absorbs the voltage spike, and the release resistor releases the energy absorbed by the absorption capacitor, preventing the absorption capacitor from becoming an "energy storage cannon" and damaging the MOSFET when releasing energy. Further, the release resistor is configured to dampen the LC resonance between the absorption capacitor and stray inductance in the circuit, preventing the formation of new ringing due to LC resonance. Figure 5 In the circuit, the drain and source of the second MOSFET 1321221 are connected to the second absorption capacitor 1321225 and the second release resistor 1321226 to form the second spike absorption circuit 1321220. The drain and source of the first MOSFET 1321211 are connected to the first absorption capacitor 1321215 and the first release resistor 1321216 to form the first spike absorption circuit 1321210.
[0076] Back Figure 2 Optionally, the energy amplification module 1320 may further include a capacitive coupling circuit 13215, coupled between the power amplification circuit 13212 and the output terminal. As an example, the capacitive coupling circuit 13215 may include a coupling capacitor 132151, coupled between the common contact point of the second switching unit 132122 and the first switching unit 132121 and the output terminal. On the one hand, this achieves "DC blocking and AC passing," that is, blocking the DC voltage between the preceding and following stages while allowing AC signals to pass. Thus, the DC bias voltage of the preceding stage cannot enter the following stage, allowing the following stage to maintain its own bias voltage. On the other hand, the coupling capacitor 132151 also serves as a surge protector, blocking the DC step voltage at the moment of power-on and avoiding inrush current.
[0077] For example Figure 6 The diagram shown illustrates the circuit principle of an energy amplification module in one embodiment of this disclosure.
[0078] Figure 6 The display includes chip U2, diodes D1, D2, D3, D4, and D5, NMOS transistors Q1 and Q2, capacitors C1, C2, C4, C5, C6, C7, and C8, and resistors R1, R2, R3, R5, R6, and R7. R8 is optional and is used to form a low-level reference point with R7 through a voltage divider. In this embodiment, the power supply terminal is Power_VCC, the output terminal is OUT+, and OUT- is the negative terminal opposite to OUT+, connected to interface J1.
[0079] The isolation driver circuit includes U2, which can be implemented as a half-bridge isolation driver chip. U2 has a signal input terminal RF_IN connected to the signal terminal of the preceding stage and a pair of signal output terminals OUTA and OUTB. OUTA is used for the first switch drive signal output on the high-voltage side, and OUTB is used for the second switch drive signal output on the low-voltage side. VSSA, the terminal forming a voltage difference with OUTA, is connected to the output terminal OUT+, and VSSB, the terminal forming a voltage difference with OUTB, is connected to OUT-. VCCA is the first power supply terminal of U2, and VCCB is the second power supply terminal of U2. The ultrasonic signal entering U2 from the signal input terminal RF_IN is split into two paths. One path is coupled through an isolation transformer to the high-voltage side switching element (not shown) used for gate driving of Q1, to drive the first switch drive signal output at OUTA. The other path first passes through an inverter and is coupled through an isolation transformer to the low-voltage side switching element (not shown) used for gate driving of Q2, to drive the second switch drive signal output at OUTB.
[0080] The isolated boost power supply circuit includes C1, D2, D5, and C8. D5 is the first diode, with its anode connected to the power supply (e.g., DC 24V) and its cathode connected to VCCB. C8 is the first filter capacitor, connected in parallel with D5 to form the first drive power supply circuit. The anode of D2 is connected to the cathode of D5, and its cathode is connected to C1 and VCCA, forming the second drive power supply circuit, i.e., the bootstrap circuit, together with C1. The 24V voltage is filtered by D5 and capacitor C8 to power VCCB. The voltage on VCCB is supplied through the bootstrap circuit composed of D2 and C1. The bootstrap circuit utilizes the characteristic that capacitors cannot change voltage instantaneously. By charging capacitor C1 during the low-level phase and boosting the voltage of C1 during the high-level phase, the voltage on C1 can exceed the 24V power supply voltage to power VCCA. This allows the first switching drive signal generated by the VCCA power supply output from OUTA to power the gate of Q1, ensuring a sufficient voltage difference Vgs between the gate and source of Q1 to turn Q1 on.
[0081] The isolated power supply circuit includes D1, C2, and C4, with filter capacitors C2 and C4 connected in parallel, and D1 being the third diode. In this embodiment, the second filter capacitor can be implemented as multiple capacitors connected in parallel, such as C2 and C4; that is, the number and specifications of the second filter capacitor can be set as needed.
[0082] D3 acts as a bleeder diode, connected in parallel with the gate drive resistor R2 to form the gate of Q1 to OUTA. D4 acts as another bleeder diode, connected in parallel with another gate drive resistor R5 to form the gate of Q2. R3 is a gate pull-down resistor connecting the gate of Q1 to VSSA. R7 is a gate pull-down resistor connecting the gate of Q2 to VSSB.
[0083] In the power amplifier circuit, the drain of Q1 is connected to the negative terminal of D1, and the source of Q1 is connected to the drain of Q2 and VSSA. The source of Q2 is connected to VSSB. One end of R1 is connected to the negative terminal of D1 and one end of C5, and the other end is connected to VSSA via C5, forming the spike absorption circuit for Q1. One end of C7 is connected to VSSA, and the other end is connected to VSSB via R6, forming the spike absorption circuit for Q2.
[0084] The capacitive coupling circuit includes capacitor C6 as the coupling capacitor, which is connected between OUT+ and the common junction of Q1, Q2, and VSSA.
[0085] Because the power amplification module 1320 operates over a wide voltage range, its components should be designed to withstand higher voltages. Components such as capacitors, resistors, MOSFETs / SiC MOSFETs, gate drivers, and diodes should be selected with voltage ratings at least one to several times higher than the circuit's highest operating voltage. Especially in tissue destruction mode, which operates in a high-voltage pulse mode with several to tens of thousands of pulses, the high-voltage electronic components in the power amplification section, particularly diodes, gate drivers, or MOSFETs / SiC MOSFETs, need to have low propagation delays and fast switching speeds to ensure normal circuit operation at MHz frequencies. For example, propagation delay should be less than 100ns, and rise / fall time should be less than 50ns; ideally, propagation delay should be no greater than 30ns, and rise / fall time less than 10ns. Alternatively, the current carrying capacity of the circuit board and cables can be considered in the design to meet the thermal ablation application requirements at several hundred watts of acoustic power.
[0086] Therefore, in some alternative embodiments, the specifications of some of the devices involved in the above circuit are also described by way of example.
[0087] As an example, D2 has a maximum reverse voltage >500V and a reverse recovery time of less than 50ns. Optionally, an example model of D2 could be MURS120T3G.
[0088] As an example, the bootstrap capacitor C1 has a voltage rating >500V and a capacitance range of 0.1uF to 10uF. Alternatively, an example model of C1 could be KP475J2J2603.
[0089] As an example, Q1 and Q2 have a withstand voltage of over 500V and an on-resistance of less than 5Ω. Alternatively, an example model for Q1 and Q2 could be GC3M0015065K.
[0090] Back Figure 1Optionally, an impedance matching module 150 can be provided after the energy amplification module 1320. The impedance matching module 150 realizes impedance matching between the drive circuit 130 and the ultrasonic transducer 110, so that the ultrasonic transducer 110 can operate at a higher conversion efficiency.
[0091] like Figure 7 The diagram shows a circuit structure schematic of a focused ultrasound system in yet another embodiment of this disclosure.
[0092] In this embodiment, the energy amplification module 1320 can also support the operation of a multi-element ultrasonic transducer 110. Especially for phased array ultrasonic transducers 110 with tens to hundreds of elements, it can support the signal of each element. Specifically, the energy amplification module 1320 may include multiple energy amplification circuits 13210, each energy amplification circuit 13210 being based on... Figure 2 or Figure 6 The circuit structure is implemented in the diagram. Each energy amplifier circuit 13210 can correspond to the output of the first ultrasonic drive signal / second ultrasonic drive signal of one or more array elements.
[0093] It should be noted that in the multi-channel phased array ultrasonic transducer 110, the phases of the ultrasonic signals generated by different array elements may be different and need to be set independently. Therefore, in accordance with this, the signal generation module 1310 can output each ultrasonic signal (each with its own independent phase / delay) in a time-division or port-division manner, and each signal is amplified by the same energy amplification circuit 13210 to drive the array elements of the same channel.
[0094] Accordingly, the impedance matching module 150 includes multiple impedance matching units 151. One impedance matching unit 151 can be provided between each energy amplification circuit 13210 and an array element of the ultrasonic transducer 110, for use between each energy amplification circuit 13210 and the array element (see Figure 2 Impedance matching between the two sides allows the ultrasonic transducer 110 to operate at a high conversion efficiency. Thus, each path forms an independent signal channel.
[0095] like Figure 8 The diagram shown illustrates a partitioned isolation layout on a circuit-carrying component 1000 according to an embodiment of this disclosure.
[0096] Figure 8 This serves as an example to illustrate how the circuitry in a focused ultrasound system is implemented in a physical circuit layout.
[0097] The circuit carrier assembly 1000 includes one or more circuit boards. The circuit carrier assembly 1000 forms a high-voltage region 1001 and a low-voltage region 1002. In the case of a single circuit board, the high-voltage region 1001 and the low-voltage region 1002 can be divided on the circuit board. In the case of multiple circuit boards, the high-voltage region 1001 and the low-voltage region 1002 can be located on different circuit boards.
[0098] The high-voltage region 1001 can accommodate high-voltage circuitry, such as the energy amplification module 1320, which includes multiple energy amplification circuits 13210. The low-voltage region 1002 can accommodate low-voltage circuitry, including one or more of the following: a signal generation module 1310, a control module 140, a monitoring / protection module 160, and a control power supply module 200. The signal generation module 1310 and the control module 140 have been described in previous embodiments. The monitoring / protection module 160 is used to monitor abnormal events in the circuit so that protective measures can be implemented in a timely manner to ensure the safety of the treatment device. The control power supply module 200 is used to supply power to the low-voltage circuitry, such as to the signal generation module 1310, the control module 140, and the monitoring / protection module 160. It should be noted that the control power module 200 can supply power to the signal generation module 1310, the control module 140, and the monitoring / protection module 160 respectively, or indirectly supply power to other modules by coupling one of them. For example, by coupling the control module 140, power can be supplied to the signal generation module 1310 and the monitoring / protection module 160 from the port of the control module 140.
[0099] It should be noted that "high" and "low" voltage are only relative terms. The division of high and low voltage regions 1002 can achieve a certain degree of spatial isolation between the two circuit sections. However, considering the signal interaction between them and further reliability requirements, it is also necessary to consider the isolation / insulation gaps between different modules and components in high voltage region 1001, as well as between different modules and components in high voltage region 1001 and low voltage region 1002. This is to prevent signal crosstalk or impact between different modules, and to avoid arcing or even short circuits between different electronic components operating at high voltage, ensuring that the circuit works normally under higher voltage.
[0100] Therefore, such as Figure 9 The diagram shown illustrates the structure of a circuit-carrying component 1000 that implements isolated transmission in one embodiment of this disclosure.
[0101] exist Figure 9In this configuration, each of the energy amplification circuits 13210 includes: a sub-power supply terminal coupled to the power supply terminal (VCC), and a sub-signal input terminal coupled to the signal generation module 1310. As an example, each sub-power supply terminal can be connected to the power supply terminal via a power bus, and each sub-signal input terminal can also be connected to the signal generation module 1310 via a signal bus.
[0102] A first isolation transmission unit 181 is provided between the sub-power supply terminals and the power supply terminal. A second isolation transmission unit 182 is provided between the sub-signal input terminal and the signal generation module. The first isolation transmission unit 181 and the second isolation transmission unit 182 realize signal isolation transmission between each energy amplifier circuit 13210 and the preceding power supply module 120, as well as signal isolation transmission with the low-voltage circuit section.
[0103] In some implementations, the first isolation transmission unit 181 and the second isolation transmission unit 182 are configured to include at least one of a unidirectional device, a magnetic coupling device, and an optical coupling device. For example, the first isolation transmission unit 181 may be implemented using a high-voltage resistant unidirectional device, such as a unidirectional thyristor or a unidirectional TVS diode, in the direction from the power supply module to the energy amplification module 1320. Alternatively, the first isolation transmission unit 181 may be implemented using an optical coupling device in the direction from the signal generation module 1310 to the energy amplification module 1320, thereby reducing interference from electrical signals by transmitting the ultrasonic signal via optical signals.
[0104] As an example, the first isolation transmission unit 181 can be implemented as follows: Figure 4 The third diode 132141 or Figure 6 The diode D1 in the middle. The second isolation transmission unit 182 can be implemented as Figure 2 The isolation drive circuit 13211 in the middle achieves isolation on both sides through the electromagnetic coupling of the isolation transmission unit 132112 therein.
[0105] The energy amplification circuit 13210 may also have an output terminal (not shown) for an ultrasonic drive signal, which is coupled to an ultrasonic transducer.
[0106] Alternatively, an electrically isolated gate driver chip can be used for the gate-driven power amplifier circuit 13210. The isolation methods listed above do not cover all isolation methods; different isolation schemes can be used depending on the circuit structure, and this is not limited to examples.
[0107] In summary, this disclosure relates to the field of medical equipment technology, providing a focused ultrasound system with multiple treatment modes. The system includes: an ultrasound transducer; a drive circuit including a signal generation module that outputs a first ultrasound generation signal suitable for a thermal ablation mode or a second ultrasound generation signal suitable for a tissue destruction mode; an energy amplification module including: a signal terminal, a power supply terminal, and an output terminal coupled to the ultrasound transducer; the energy amplification module including: an isolation drive circuit that outputs opposite first and second switching drive signals based on the input ultrasound generation signals; and a power amplification circuit including: a second switching unit and a first switching unit set to opposite switching states by opposite drive signals to output ultrasound drive signals to excite the ultrasound transducer to form focused ultrasound in either a tissue destruction mode or a thermal ablation mode. The drive circuit structure is simple and easy to implement, and can handle the power supply requirements of multiple modes such as thermal ablation and tissue destruction, thus meeting the reliability requirements of multi-mode focused ultrasound treatment equipment.
[0108] The above embodiments are merely illustrative of the principles and effects of this disclosure and are not intended to limit this disclosure. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this disclosure. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this disclosure should still be covered by the protection scope of this disclosure.
Claims
1. A focused ultrasound system having multiple treatment modes, characterized by, The application relates to an ultrasonic energy amplifier, comprising: an ultrasonic transducer; an ultrasonic driving module coupled with the ultrasonic transducer, comprising: a signal generating module configured to output a first ultrasonic generating signal with signal parameters suitable for a thermal ablation mode or a second ultrasonic generating signal with signal parameters suitable for a tissue destruction mode; an energy amplifying module, comprising: a signal end, a power supply end, and an output end coupled with the ultrasonic transducer; the signal end is coupled with the signal generating module; the power supply end is used for receiving a first power supply signal with electrical parameters suitable for the thermal ablation mode or a second power supply signal suitable for the tissue destruction mode; the output end is used for outputting a first ultrasonic driving signal obtained by amplifying the first ultrasonic generating signal by the first power supply signal or a second ultrasonic driving signal obtained by amplifying the second ultrasonic generating signal by the second power supply signal; wherein the ultrasonic transducer is excited by the first ultrasonic driving signal or the second ultrasonic driving signal to output focused ultrasonic waves suitable for the thermal ablation mode or the tissue destruction mode; the energy amplifying module comprises at least one energy amplifying circuit, comprising: an isolation driving circuit, comprising a signal input end coupled with the signal end and a pair of signal output ends, and being configured to output opposite first and second switch driving signals at the pair of signal output ends based on the input ultrasonic generating signal; a power amplifying circuit, comprising: a first switch unit coupled between the output end and the ground, and a second switch unit coupled between the power supply end and the output end; the first and second switch units are further coupled with the pair of signal output ends of the isolation driving circuit, so as to be set to opposite switch states by the first and second switch driving signals respectively to form voltage changes in the first ultrasonic driving signal or the second ultrasonic driving signal at the output end; an isolation voltage boosting power supply circuit, configured to supply power to the isolation driving circuit by using a supply voltage of an accessed power supply and a boosted voltage thereof, so that the first and second switch driving signals can drive the first and second switch driving units to be conductive.
2. The focused ultrasound system with multiple treatment modalities of claim 1, wherein, The isolation driving circuit comprises: an inverter, an isolation transmission unit, a first driving signal generating unit, and a second driving signal generating unit. The isolation transmission unit comprises: a pair of isolation input ends connected to the signal input end through branch lines; the inverter is arranged in one of the branch lines to form opposite signals at the pair of isolation input ends; a pair of isolation output ends, which are one-to-one isolatedly coupled with the pair of isolation input ends for signal transmission, and are respectively connected to the first and second driving signal generating units.
3. The focused ultrasound system with multiple treatment modalities of claim 1, wherein, The isolation voltage boosting power supply circuit comprises: a first driving power supply circuit, comprising: a first diode with positive and negative electrodes coupled with a power supply and a first power supply end of the isolation driving circuit respectively, so as to provide electrical energy for the generation of the first switch driving signal. The second driving power supply circuit comprises: a second diode having a negative electrode coupled to a negative electrode of a first diode and a second power supply end of the isolation driving circuit, to provide power for generation of the second switch driving signal; and a bootstrap capacitor coupled between the negative electrode of the second diode and an output end, to form a bootstrap voltage rise with the second diode when the second switch unit is turned on.
4. The focused ultrasound system with multiple treatment modes of claim 3, wherein, The energy amplification module comprises at least one of the following: The first diode is connected in parallel with a first filter capacitor; The second diode has a maximum reverse voltage > 500V and a reverse recovery time < 50ns; The bootstrap capacitor has a withstand voltage > 500V and a capacity in the range of 0.1uF-10uF.
5. The focused ultrasound system with multiple treatment modalities of claim 1, wherein, The energy amplification module further comprises: An isolation power supply circuit coupled to the power supply end and the second switch unit, comprising a third diode and at least one second filter capacitor connected in series; the positive electrode of the third diode is coupled to the power supply end, the negative electrode of the third diode is coupled to the filter capacitor to the ground and the second switch unit for power supply.
6. The focused ultrasound system with multiple treatment modalities of claim 1, wherein, The first switch unit comprises a first MOS tube, and the second switch unit comprises a second MOS tube connected in series with the first MOS tube; the gates of the second MOS tube and the first MOS tube are respectively coupled to a signal output end; and the common connection points of the second MOS tube and the first MOS tube are led out to the output end.
7. The focused ultrasound system with multiple treatment modalities of claim 6, wherein, The second MOS tube and the first MOS tube have a withstand voltage > 500V and an on-resistance < 5Ω.
8. The focused ultrasound system with multiple treatment modalities of claim 6, wherein, The gates of the second MOS tube and / or the first MOS tube are coupled to the isolation driving circuit through a bleeder diode, and the positive and negative electrodes of the bleeder diode are respectively coupled to the gates and the isolation driving circuit; And / or, the gates of the second MOS tube and / or the first MOS tube are connected to the isolation driving circuit through a gate driving resistor; And / or, the gates of the second MOS tube and / or the first MOS tube are further coupled to a gate pull-down resistor to the ground.
9. The focused ultrasound system with multiple treatment modes of claim 6, wherein, A spike absorption circuit is coupled between the drain and the source of the second MOS tube and / or the first MOS tube; the spike absorption circuit comprises an absorption capacitor and a release resistor connected in series; the release resistor is configured to dampen the resonance of the absorption capacitor and the line inductance.
Citation Information
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