Light emitting device

Abstract

A light-emitting device according to one embodiment of the present disclosure is provided with a mesa-type light-emitting element, a first conductive layer, a second conductive layer, a first contact plug, and a second contact plug. The first conductive layer is in contact with the first compound semiconductor layer of the mesa-type light emitting element. The second conductive layer is in contact with the second compound semiconductor layer of the mesa-type light emitting element. The first contact plug is disposed at a position not facing the top of the mesa-type light emitting element in a plan view, and is electrically connected to the first compound semiconductor via the first conductive layer. The second contact plug is disposed at a position not facing the top of the mesa-type light emitting element in plan view, and is electrically connected to the second compound semiconductor via the second conductive layer.

Description

Technical Field

[0001] This disclosure relates to a light-emitting device. Background Technology

[0002] Various miniature light-emitting devices have been proposed in the past (see, for example, Patent Document 1).

[0003] Reference List

[0004] Patent documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2020-19015 Summary of the Invention

[0006] Incidentally, in a light-emitting device that incorporates the aforementioned multiple micro-light-emitting elements, it is necessary to suppress light leakage to adjacent pixels. Therefore, it is desirable to provide a light-emitting device capable of suppressing light leakage to adjacent pixels.

[0007] The light-emitting device according to a first aspect of this disclosure includes a mesa-type light-emitting element, a first conductive layer, a second conductive layer, a first contact plug, and a second contact plug. The mesa-type light-emitting element includes an active layer and a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type sandwiched between the active layer. In the mesa-type light-emitting element, the second compound semiconductor layer is disposed on the top of the mesa. The first conductive layer contacts the first compound semiconductor layer and extends at the foot of the mesa-type light-emitting element. The second conductive layer contacts the second compound semiconductor layer and extends at the foot of the mesa-type light-emitting element. In a plan view, the first contact plug is disposed at a position not opposite to the top of the mesa-type light-emitting element and is electrically coupled to the first compound semiconductor via the first conductive layer. In a plan view, the second contact plug is disposed at a position not opposite to the top of the mesa-type light-emitting element and is electrically coupled to the second compound semiconductor via the second conductive layer.

[0008] In the light-emitting device of the first aspect of this disclosure, a first contact plug electrically coupled to a first compound semiconductor and a second contact plug electrically coupled to a second compound semiconductor are disposed at a position in the plan view that is not opposite to the top of the mesa-type light-emitting element. Because it is not necessary to directly couple the contact plugs to the mesa-type light-emitting element, this allows for miniaturization of the mesa-type light-emitting element. Furthermore, even with miniaturization of the mesa-type light-emitting element, electrical coupling with the mesa-type light-emitting element can be ensured. Moreover, even when the mesa-type light-emitting element is covered by a reflective metal layer, the contact plugs do not become obstructions, and the reflective metal layer can cover the top and sides of the mesa-type light-emitting element without any gaps.

[0009] The light-emitting device according to a second aspect of this disclosure includes a plurality of pixels arranged in a two-dimensional manner. Each pixel includes a mesa-type light-emitting element, a first conductive layer, a second conductive layer, a first contact plug, and a second contact plug. The mesa-type light-emitting element includes an active layer and a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type sandwiched between the active layer. In the mesa-type light-emitting element, the second compound semiconductor layer is disposed on the top of the mesa. The first conductive layer contacts the first compound semiconductor layer and extends at the foot of the mesa-type light-emitting element. The second conductive layer contacts the second compound semiconductor layer and extends at the foot of the mesa-type light-emitting element. In a plan view, the first contact plug is disposed at a position not opposite to the top of the mesa-type light-emitting element and is electrically coupled to the first compound semiconductor via the first conductive layer. In a plan view, the second contact plug is disposed at a position not opposite to the top of the mesa-type light-emitting element and is electrically coupled to the second compound semiconductor via the second conductive layer.

[0010] In the light-emitting device according to the second aspect of this disclosure, a first contact plug electrically coupled to a first compound semiconductor layer and a second contact plug electrically coupled to a second compound semiconductor layer are provided at a position in the plan view that is not opposite to the top of the mesa-type light-emitting element. Because it is not necessary to directly couple the contact plugs to the mesa-type light-emitting element, this allows for miniaturization of the mesa-type light-emitting element. Furthermore, even with miniaturization of the mesa-type light-emitting element, electrical coupling with the mesa-type light-emitting element can be ensured. Moreover, even when the mesa-type light-emitting element is covered by a reflective metal layer, the contact plugs do not become obstructions, and the reflective metal layer can cover the top and sides of the mesa-type light-emitting element without any gaps. Attached Figure Description

[0011] Figure 1 This is a diagram illustrating an example of a cross-sectional configuration of a light-emitting device according to an embodiment of the present disclosure.

[0012] Figure 2 It is shown Figure 1 A diagram illustrating an example of a light-emitting device and its surrounding cross-sectional configuration.

[0013] Figure 3 It shows along Figure 1 A diagram illustrating an example of the cross-sectional configuration of line AA.

[0014] Figure 4 It shows along Figure 1 A diagram illustrating an example of the cross-sectional configuration of line BB.

[0015] Figure 5A It shows the description Figure 1 A cross-sectional view illustrating an example of the manufacturing process of a light-emitting device.

[0016] Figure 5B It is shown in Figure 5A A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0017] Figure 5C It is shown in Figure 5B A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0018] Figure 5D It is shown in Figure 5C A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0019] Figure 5E It is shown in Figure 5D A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0020] Figure 5F It is shown in Figure 5E A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0021] Figure 5G It is shown in Figure 5F A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0022] Figure 5H It is shown in Figure 5G A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0023] Figure 5I It is shown in Figure 5H A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0024] Figure 5J It is shown in Figure 5H A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0025] Figure 5K It is shown in Figure 5J A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0026] Figure 5L It is shown in Figure 5K A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0027] Figure 5M It is shown in Figure 5L A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0028] Figure 5N It is shown in Figure 5M A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0029] Figure 5O It is shown in Figure 5N A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0030] Figure 5P It is shown in Figure 5O A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0031] Figure 5Q It is shown in Figure 5P A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0032] Figure 5R It is shown in Figure 5Q A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0033] Figure 5S It is shown in Figure 5R A diagram illustrating an example of cross-sectional configuration during the subsequent process.

[0034] Figure 6 It is shown Figure 2 A diagram showing the light-emitting device and its surrounding modified forms.

[0035] Figure 7 It is shown Figure 2 A diagram showing the light-emitting device and its surrounding modified forms.

[0036] Figure 8 It is shown Figure 2 A diagram showing the light-emitting device and its surrounding modified forms.

[0037] Figure 9 It is shown Figure 3 A diagram illustrating a modified example of the cross-sectional configuration of the plug.

[0038] Figure 10 It is shown Figure 3 A diagram illustrating a modified example of the cross-sectional configuration of the plug.

[0039] Figure 11 It is shown Figure 1 A diagram illustrating a modified example of the cross-sectional configuration of the light-emitting device.

[0040] Figure 12 It is shown Figure 2 A diagram illustrating a modified example of the cross-sectional configuration of a semiconductor device and its vicinity.

[0041] Figure 13 It is shown Figure 2 A diagram illustrating a modified example of the cross-sectional configuration of a semiconductor device and its vicinity.

[0042] Figure 14 It is shown Figure 2A diagram illustrating a modified example of the cross-sectional configuration of a semiconductor device and its vicinity.

[0043] Figure 15 It is shown Figure 2 A diagram illustrating a modified example of the cross-sectional configuration of a semiconductor device and its vicinity.

[0044] Figure 16 It is shown Figure 2 A diagram illustrating a modified example of the cross-sectional configuration of a semiconductor device and its vicinity.

[0045] Figure 17 It is shown Figure 2 A diagram illustrating a modified example of the cross-sectional configuration of a semiconductor device and its vicinity.

[0046] Figure 18 It is a diagram showing how multiple pixels are arranged in two dimensions. Detailed Implementation

[0047] In the following, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that in this specification and the drawings, components having substantially the same functional configuration will be given the same reference numerals, and thus repeated descriptions will be omitted.

[0048] Furthermore, in this specification and accompanying drawings, multiple components each having substantially the same or similar functional configuration can be distinguished by being given different numbers following the same reference numerals. However, where it is not particularly necessary to distinguish components each having substantially the same or similar functional configuration, these components will simply be given the same reference numerals. Additionally, similar components in different embodiments can be distinguished by being given different alphabetical letters after the same reference numerals. However, where it is not particularly necessary to distinguish similar components, the component will simply be given the same reference numerals.

[0049] Furthermore, the accompanying drawings mentioned in the following description are for illustrating embodiments of the present disclosure and to facilitate understanding of the embodiments. For simplicity, the shapes, dimensions, aspect ratios, etc., shown in the drawings may differ from the actual situation. Moreover, the design of the light-emitting device shown in the drawings can be appropriately modified based on the following description and prior art. Additionally, in the description of the cross-sectional view using the light-emitting device, the vertical direction of the stacked structure of the light-emitting device corresponds to the relative direction when the light incident surface of the light-emitting device is on the upper side, and the vertical direction may differ from the actual gravitational acceleration.

[0050] Furthermore, in the following description, expressions related to size or shape do not simply mean the same value as a mathematically defined numerical value or a geometrically defined shape. Rather, expressions include situations where there is an industrially permissible degree of variation in the manufacturing process of the light-emitting device, or include shapes similar to that shape.

[0051] Furthermore, in the following description of circuit configurations, unless otherwise specified, "coupling" means electrical coupling between multiple components. Additionally, in the following description, "coupling" includes not only the case of direct and electrical coupling of multiple components, but also the case of indirect and electrical coupling of components via another component.

[0052] It is important to note that the descriptions should be presented in the following order.

[0053] 1. Implementation Method (Light-emitting Device)

[0054] 1-1. Configuration of the light-emitting device

[0055] 1-2. Manufacturing method of light-emitting device

[0056] 1-3. Work and Results

[0057] 2. Modified Example (Light-emitting Device)

[0058] 2-1. Variation A 2-2. Variation B 2-3. Variation C 2-4. Variation D 2-5. Variation E 2-6. Variation F 2-7. Variation G 2-8. Variation H 2-9. Variation I 2-10. Variation J 2-11. Variation K 2-12. Variation L

[0059] <1. Implementation Method>

[0060] [Configuration]

[0061] A light-emitting device 1 according to an embodiment of the present disclosure is described. Figure 1 An example of a cross-sectional configuration of a light-emitting device 1 according to an embodiment of the present disclosure is shown. Figure 2 yes Figure 1 An enlarged view of an example of a cross-sectional configuration of a portion of the light-emitting device 1 shown (near the light-emitting element 12 and the light-emitting element 12 described below).

[0062] (1-1. Configuration of the light-emitting device)

[0063] The light-emitting device 1 includes a display section 100A and a frame section 100B disposed around the display section 100A. Multiple pixels (e.g., red pixel Pr, green pixel Pg, and blue pixel Pb) are arranged in a two-dimensional array in the display section 100A. The light-emitting device 1, for example, has a light-emitting section 10 and a wavelength converter 20, which are stacked on a driving substrate 30 in this order. The outermost surface of the wavelength converter 20 represents the light-emitting surface S1. The multiple pixels are arranged in a two-dimensional array in a plan view, and for example, in a matrix shape or a honeycomb shape. It should be noted that in this specification, "plan view" refers to a flat surface having a normal in the stacking direction of the light-emitting device 1 when viewed from the stacking direction of the light-emitting device 1.

[0064] First, the light-emitting part 10 will be explained.

[0065] The light-emitting portion 10 has a plurality of light-emitting elements 12. The light-emitting elements 12 correspond to a specific example of a "mesa-type light-emitting element" according to an embodiment of the present disclosure. Each of the plurality of light-emitting elements 12 is disposed in each pixel. The light-emitting element 12 is a solid-state light-emitting device that emits light of a predetermined wavelength band toward the light-emitting surface S1, such as an LED (light-emitting diode). The light-emitting element 12 refers to a light-emitting device in a diced state from a wafer used for crystal growth, rather than a packaged type covered with molding resin, etc. The light-emitting element 12 has a size, for example, from 5 μm or more to 100 μm or less, and is referred to as a so-called micro LED. The plurality of light-emitting elements 12 are formed on a common substrate 11. It should be noted that a plurality of substrates 11 may be disposed in the light-emitting portion 10 and a plurality of light-emitting devices 11 may be formed on each substrate 11.

[0066] The light-emitting element 12 includes, for example, an active layer 122, and an n-type compound semiconductor layer 121 and a p-type compound semiconductor layer 123 sandwiched between the active layer 122. The active layer 122 corresponds to a specific example of an "active layer" according to embodiments of the present disclosure. The n-type compound semiconductor layer 121 corresponds to a specific example of a "first compound semiconductor layer of a first conductivity type" according to embodiments of the present disclosure. The p-type compound semiconductor layer 123 corresponds to a specific example of a "second compound semiconductor layer of a second conductivity type" according to embodiments of the present disclosure.

[0067] The light-emitting element 12 is a mesa-type light-emitting element having a compound semiconductor layer 123 on top. Hereinafter, the mesa-type portion in the light-emitting element 12 is referred to as mesa 12A. The light-emitting element 12 (mesa 12A) is configured to output emitted light in the upward direction (i.e., the wavelength converter 20 side) by reflecting light through the adjacent reflective layer 17c. Figure 1 and Figure 2As shown, for example, the top of the mesa 12A faces downward in the direction shown in the figure (i.e., the side facing the drive substrate 30). The mesa 12A has, for example, a conical side surface relative to the substrate 11. The angle of the side surface of the mesa 12A is, for example, greater than 45° and less than 90°. It should be noted that the side surface of the mesa 12A may, for example, be perpendicular to the substrate 11.

[0068] Substrate 11 is a substrate for crystal growth of light-emitting element 12 and is a semiconductor substrate of a first conductivity type. Substrate 11 is, for example, an n-type GaN substrate. Substrate 11 corresponds to a specific example of a "first conductive layer" and a "semiconductor layer of a first conductivity type" according to embodiments of the present disclosure. Substrate 11 is in contact with and electrically coupled to n-type compound semiconductor layer 121. Substrate 11 extends from the bottom of mesa 12A to the bottom of mesa 12A.

[0069] The light-emitting element 12 (active layer 122, compound semiconductor layer 121, and compound semiconductor layer 123) is, for example, a GaN-based compound semiconductor. Examples of GaN-based compound semiconductors include GaN, AlGaN, InGaN, AlInGaN, etc. The active layer 122 can emit light with emission wavelengths of, for example, 430 nm or larger and 500 nm or smaller in the blue region. The active layer 122 can also emit light with emission wavelengths of, for example, 350 nm or larger and 430 nm or smaller in the ultraviolet region. The active layer 122 may have, for example, a bulk structure, a single quantum well structure, or a quantum well structure.

[0070] The light-emitting portion 10 includes electrode layers 17a and 17b and plugs 18 and 19 for each pixel. Electrode layers 17a and 17b correspond to specific examples of the "second conductive layer" and "second transparent conductive layer" according to embodiments of the present disclosure, respectively. Plug 18 corresponds to a specific example of the "second contact plug" according to embodiments of the present disclosure. Plug 19 corresponds to a specific example of the "first contact plug" according to embodiments of the present disclosure.

[0071] Electrode layer 17a is disposed on the top of the mesa 12A (compound semiconductor layer 123). Electrode layer 17a is in contact with and electrically coupled to the top of the mesa 12A (compound semiconductor layer 123). Electrode layer 17b is disposed on electrode layer 17a and extends along the top, side surface, and base of the mesa 12A. Electrode layer 17b is in contact with and electrically connected to electrode layer 17a. Electrode layers 17a and 17b are transparent conductive layers that are transparent to the light emitted from the light-emitting element 12.

[0072] Electrode layers 17a and 17b comprise, for example, indium-based transparent conductive materials, tin-based transparent conductive materials, or zinc-based transparent conductive materials. Examples of indium-based transparent conductive materials include, for example, indium tin oxide (ITO, including Sn-doped In₂O₃ indium tin oxide, crystalline ITO, and amorphous ITO), indium zinc oxide (IZO, indium zinc oxide), indium gallium oxide (IGO), indium-doped gallium zinc oxide (IGZO and In-GaZnO₄), IFO (F-doped In₂O₃), ITiO (Ti-doped In₂O₃), InSn, or InSnZnO, etc. Examples of tin-based transparent materials include, for example, tin oxide (SnO₂), ATO (Sb-doped SnO₂), FTO (F-doped SnO₂), etc. Examples of zinc-based transparent conductive materials include, for example, zinc oxide (ZnO, including Al-doped ZnO (ZZO) or B-dopes ZnO), gallium / doped zinc oxide (GZO), and AlMgZnO (aluminum oxide and magnesium oxide-doped zinc oxide). Electrode layers 17a and 17b can be a single layer containing the above materials or a laminate selected from the above materials.

[0073] In the plan view, plugs 18 and 19 are contact plugs disposed at positions not opposite to the top of the mesa 12A. Plug 18 is electrically coupled to the compound semiconductor layer 123 via electrode layers 17a and 17b. Plug 19 is electrically connected to the compound semiconductor layer 121 via the substrate 11. One end of plug 18 contacts the foot-facing portion (foot 11A) of the mesa 12A of the electrode layer 17b. The other end of plug 18 contacts the lead-out electrode 14, which will be described below. One end of plug 19 contacts the foot (foot 11A) of the mesa 12A of the substrate 11. The other end of plug 19 contacts the lead-out electrode 15, which will be described later.

[0074] Inserts 18 and 19 are embedded together with the light-emitting element 12 in the insulating layer 16c. Inserts 18 and 19 include corresponding columnar metal members, for example, formed to fill trenches (trenches H3 and H4, described below) formed in the insulating layer 16c. Inserts 18 and 19 comprise, for example, a metal or metal compound with Ti, W, All, Ni, Ta, Cu, Ag, or Au as the main component. Inserts 18 and 19 are formed by, for example, CVD (chemical vapor deposition) or ALD (atomic layer deposition). Inserts 18 and 19 can be, for example, a monolayer comprising the above-described materials or a laminate selected from the above-described materials.

[0075] An insulating layer 16a is disposed between the side surface of the mesa 12A, the surface of the substrate 11 (leg 11A), and the electrode layer 17b. The insulating layer 16a serves to electrically insulate the side surface of the mesa 12A, the surface of the substrate 11 (leg 11A), and the electrode layer 17b from each other. Insulating layers 16a and 16c are formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0076] The light-emitting portion 10 further includes a reflective layer 17c for each pixel. The reflective layer 17c corresponds to a specific example of a "reflective metal layer" according to an embodiment of the present disclosure. The reflective layer 17c is disposed at a position opposite to the light-emitting element 12 (platform 12A), with electrode layers 17a and 17b interposed therebetween. The reflective layer 17c is formed to cover the light-emitting element 12 (platform 12A) from the top to the side. The reflective layer 17c is an electroflot layer that does not contact the electrode layers 17a and 17b or the substrate 11.

[0077] The reflective layer 17c comprises a material with a reflectivity (reflectivity of the wavelength of light emitted from the light-emitting element 12) higher than that of each of the electrode layers 17a and 17b. The reflective layer 17c comprises, for example, a metal or a metal compound containing, for example, Ag, Al, Ti, W, Ni, Ta, Cu, or Au as a main component. The reflective layer 17c may comprise, for example, a resin film with reflective properties. The reflective layer 17c must have a film thickness sufficient to prevent light emitted from the light-emitting element 12 from being transmitted. If the wavelength of light emitted from the light-emitting device 1 is, for example, 460 nm, the reflective layer 17c must have a film thickness of 50 nm or greater.

[0078] An insulating layer 16b is disposed between the reflective layer 17c and the electrode layer 17b. The insulating layer 16b is used to electrically insulate the reflective layer 17c and the electrode layer 17b from each other. The insulating layer 16b is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0079] The light-emitting unit 10 further includes a wiring layer 13. The wiring layer 13 is disposed between the plurality of light-emitting elements 12 and the driving substrate 30. The wiring layer 13 includes an interlayer insulating film 13a and wirings 13b disposed in the interlayer insulating film 13a. The wiring layer 13 also has lead-out electrodes 14 and 15 for each pixel, the lead-out electrodes 14 and 15 being exposed on the surface of the interlayer insulating film 13a on the side of the light-emitting element 12. The lead-out electrode 14 is coupled to a plug 18. The lead-out electrode 15 is coupled to a plug 19.

[0080] The wiring layer 13 also has pad electrodes 13c and 13d exposed on the surface of the interlayer insulating film 13a on the driving substrate 30 side, and pad electrodes 13e and 13f exposed on the surface of the interlayer insulating film 13a on the light-emitting element 12 side. The wiring layer 13 has a pad electrode 13c for each pixel. For example, wiring 13b has wiring that couples the lead-out electrode 15 and the pad electrode 13f of each pixel to each other. Wiring 13b further has wiring that couples the lead-out electrode 14 and the pad electrode 13c to each other for each pixel, for example. Wiring 13b and pad electrodes 13c, 13d, 13e and 13f include, for example, Cu. Lead-out electrodes 14 and 15 include, for example, metals or metal compounds having, for example, Ti, W, Al, Ni, Ta, Cu, Ag or Au as the main components.

[0081] Next, the layout of plugs 18 and 19 and lead electrodes 14 and 15 is described in the plan view (planar layout). Figure 3 It shows along Figure 1 An example of the cross-sectional configuration of line AA in the diagram. Figure 4 It shows along Figure 1 An example of the cross-sectional configuration of line BB in the diagram.

[0082] In the plan view, the plug 19 is formed as a continuous (uninterrupted) side surrounding the light-emitting element 12 (the platform surface 12A). Therefore, in addition to having the function of wiring that electrically couples the lead-out electrode 15 and the substrate 11 to each other, the plug 19 also has the function of a pixel separator that prevents some of the light output from the light-emitting element 12 from becoming stray light that propagates through the insulating layers 16a, 16b, 16c and leaks to adjacent pixels.

[0083] In contrast, in the plan view, plug 18 is formed in the area surrounded by plug 19. Plug 18 is electrically coupled to drive substrate 30 (pad electrode 36, vertical wiring 35, and drive circuit 32, described below) via wiring layer 13 (lead electrode 14, wiring 13b, and pad electrode 13c). Therefore, even when plug 18 is surrounded by plug 19 in the plan view, drive signals can be supplied from drive substrate 30 side to light-emitting element 12 via plug 18. It should be noted that because plug 19 is electrically coupled to pad electrode 13f via wiring 13b in wiring layer 13, reference potentials for each light-emitting element 12 can be supplied to each light-emitting element 12 via pad electrode 13f, wiring 13b, and plug 19.

[0084] The lead-out electrode 15 is formed to continuously (uninterruptedly) surround the area surrounded by the plug 19 in a planar view. A portion of the lead-out electrode 15 is disposed in a position in the planar view that overlaps at least the gap between the electrode layer 17c and the plug 19. Therefore, in addition to functioning as wiring to provide a reference potential to each light-emitting element 12, the lead-out electrode 15 also functions as a pixel separator, preventing some light output from the light-emitting element 12 from becoming stray light propagating through the insulating layer 16c and leaking into adjacent pixels.

[0085] Conversely, lead-out electrode 14 is formed in the area surrounded by lead-out electrode 15 in the plan view. Lead-out electrode 14 is electrically coupled to light-emitting element 12 via plug 18, and electrically coupled to driving substrate 30 via wiring 13b and pad electrode 13c. Therefore, even when lead-out electrode 14 is surrounded by lead-out electrode 15 in the plan view, driving signals can be supplied from driving substrate 30 side to light-emitting element 12 via plug 18.

[0086] The wavelength conversion layer 20 is described below.

[0087] The wavelength converter 20 has multiple wavelength conversion layers 21R, 21G, and 21B. Each of the multiple wavelength conversion layers 21R, 21G, and 21B is configured for each pixel and is positioned facing each light-emitting device 11. The wavelength converter 20 has a partition layer 22 with an opening positioned facing each of the light-emitting devices 11, and each of the multiple wavelength conversion layers 21R, 21G, and 21B is positioned at each opening of the partition layer 22. Furthermore, a reflective layer 23 is disposed on the inner wall of each opening of the partition layer 22. Additionally, a protective layer 25 is disposed on the light-emitting surface S1 side, and an on-chip lens layer 27 is disposed on the protective layer 25.

[0088] Here, in the display unit 100A, the area including the wavelength conversion layer 21R and the light-emitting element 11 that overlap in the plan view is a red pixel Pr. Similarly, the area including the wavelength conversion layer 21G and the light-emitting device 11 that overlap in the plan view is a green pixel Pg, and the area including the wavelength conversion layer 21B and the light-emitting device 11 that overlap in the plan view is a blue pixel Pb.

[0089] The partition layer 22 is a layer that suppresses color mixing caused by light leakage between pixels (red pixel Pr, green pixel Pg, and blue pixel Pb). The partition layer 22 has, for example, a substrate structure or a honeycomb structure. Each opening of the partition layer 22 has, for example, an inclined surface that tapers from the light-emitting surface S1 side toward the light-emitting part 10 side. That is, each opening of the partition layer 22 has a front conical inclined surface relative to the light-emitting part 10. The partition layer 22 preferably comprises a material with high thermal and electrical conductivity, and includes, for example, metallic materials such as Cu, Al, Au, Ni, and Pt.

[0090] The wavelength conversion layer 21 is configured to convert light emitted from the plurality of light-emitting devices 11 into a desired wavelength (e.g., red (R), green (G), and blue (B)) and output the light. Specifically, a red wavelength conversion layer 21R is provided in the red pixel Pr to convert the light emitted from the light-emitting element 11 into red light (red light), a green wavelength conversion layer 21G is provided in the green pixel Pg to convert the light emitted from the light-emitting element 11 into green light (green light), and a blue wavelength conversion layer 21B is provided in the blue pixel Pb to convert the light emitted from the light-emitting element 11 into blue light (blue light).

[0091] Wavelength conversion layers 21R, 21G, and 21B can be formed using quantum dots corresponding to each color. Specifically, to obtain red light, quantum dots can be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe. To obtain green light, quantum dots can be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS. To obtain blue light, quantum dots such as ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, and CdSeS can be selected. It should be noted that when blue light is output from the light-emitting device 11, as described above, the blue wavelength conversion layer 23B can be formed from an optically transparent resin layer.

[0092] The reflective layer 23 is used to effectively extract from the light-emitting surface S1 the corresponding colors emitted from the light-emitting device 11 and converted at the corresponding wavelength conversion layers 21R, 21G, and 21G. The reflective layer 23 comprises a metallic material with light reflectivity. The metallic material forming the reflective layer 23 includes metals with high reflectivity in the visible light region. Specific examples of materials include, for example, Ag, Al, Cu, Au, Pt, Rh, or alloys thereof. It should be noted that if the partition layer 22 is formed using the aforementioned metallic material with light reflectivity, the reflective layer 23 is not necessarily required.

[0093] The protective layer 24 protects the surface of the light-emitting device 1 and is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN). Wavelength selective layers can be provided on the red pixel Pr and the green pixel Pg within the protective layer 24. These wavelength selective layers selectively reflect blue light (blue light), thereby improving the degree of color impurities in the red and green light extracted from the red pixel Pr and the green pixel Pg, respectively.

[0094] The on-chip lens layer 26 is configured to cover the entire surface of the display portion 100A and the frame portion 100B. The on-chip lens layer 26 includes a material with optical transparency and includes a monolayer film formed of any one of silicon oxide (SiO), silicon nitride (SiN), and silicon oxynitride (SiCN), or a laminated film formed of two or more of them.

[0095] Openings H1 and H2 are provided in the frame portion 100B, penetrating the on-chip lens layer 26, protective layer 24, partition wall layer 22, and insulating layer 16c, and reaching the pad electrodes 13e and 13f. The pad electrodes 13e and 13f exposed at the bottom of openings H1 and H2 serve as coupling electrodes to the outside.

[0096] Next, the driving substrate 30 will be described.

[0097] A driving circuit 32, etc., is provided in the driving substrate 30, and the driving circuit 32, etc., drives a plurality of light-emitting devices 11 provided on the display unit 100A. The driving substrate 30 is disposed at a position opposite to the wavelength conversion layers 21R, 21G, and 21B, with respect to the plurality of light-emitting devices 11. The driving substrate 30 has a support substrate 31 made of, for example, silicon (Si) and a wiring layer 33 provided on the support substrate 31. An interlayer insulating film 34 and vertical wirings 35 embedded in the interlayer insulating film 34 are provided in the wiring layer 33. In a plan view, the vertical wirings 35 are arranged at a position facing the area surrounded by the lead electrode 15 (for example, at a position overlapping with the lead electrode 14). The vertical wirings 35 electrically couple the lead electrode 14 to the driving circuit 32. The vertical wirings 35 include, for example, through holes. Pad electrodes 36 and 37 are provided in the interlayer insulating film 34, and the pad electrodes 37 and 37 are exposed on a surface, for example, on the side of the wiring layer 13. Pad electrode 36 contacts vertical wiring 35 and is bonded to pad electrode 13c. Pad electrode 37 is bonded to pad electrode 13d.

[0098] The interlayer insulating film 34 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN). The vertical wiring 35 comprises, for example, Cu, Al, W, Ag or alloys thereof. The pad electrodes 36 and 37 comprise, for example, Cu.

[0099] [Manufacturing Method]

[0100] Next, the manufacturing method of the light-emitting device 1 will be described. Figure 5A A cross-sectional configuration example is shown to illustrate the manufacturing process of the light-emitting device 1. Figures 5B to 5S It shows Figure 5A Examples of section configurations in the subsequent process.

[0101] First, for example, using substrate 11 as a growth substrate, a compound semiconductor layer 121, an active layer 122, and a compound semiconductor layer 123 are formed by epitaxial crystal growth using methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Figure 5A Then, for example, an electrode layer 17a and an insulating layer 17d are formed on the compound semiconductor layer 123 by chemical vapor deposition (CVD). Figure 5A Next, chemical mechanical polishing (CMP) is used, for example, to grind a predetermined area down to substrate 11 to expose the surface of substrate 11. Figure 5B ).

[0102] Next, after forming the insulating layer 17e by, for example, CVD, the insulating layer 17e is patterned by wet etching. Figure 5C Then, the insulating layer 17d is selectively etched using wet etching with the patterned insulating layer 17e as a mask. Therefore, the insulating layer 17d remains only directly beneath the island-shaped insulating layer 17e. Figure 5D Subsequently, the insulation layer 17e was removed. Figure 5E ).

[0103] Next, the electrode layer 17a, compound semiconductor layer 123, active layer 122, and compound semiconductor layer 121, as well as a portion of the substrate 11, are selectively etched using dry etching with the insulating layer 17d as a mask. Therefore, the mesa 12A is formed directly beneath the insulating layer 17d. Figure 5F Subsequently, the insulation layer was removed 17 days later. Figure 5G At this time, electrode layer 17a is disposed on the top surface of the platform 12A.

[0104] Next, for example, an insulating layer 16a is formed on the side and bottom surfaces of the platform 12A using a CVD method. Figure 5H Then, for example, an electrode layer 17b, an insulating layer 16b, and a reflective layer 17c are formed along the top, sides, and bottom of the platform 12A using a CVD method. Figure 5I , Figure 5J and Figure 5KNext, after forming an insulating layer 16c on the entire surface including the reflective layer 17c and the substrate 11 by a CVD method, trenches H3 and H4 are formed at predetermined locations, for example, by dry etching (e.g., (FG.5L)). Trenches H3 and H4 have, for example, positively tapered inner walls relative to the substrate 11. The angle of the inner walls of trenches H3 and H4 is, for example, greater than 75° and less than 90°. It should be noted that, for example, the inner walls of trenches H3 and H4 may be perpendicular to the substrate 11.

[0105] Next, for example, plugs 18 and 19 and lead electrodes 14 and 15 are formed by CVD to fill trenches H3 and H4. Figure 5M Therefore, plugs 18 and 19 have front tapered side surfaces relative to substrate 11. The angle of the side surfaces of plugs 18 and 19 is, for example, greater than 75° and less than 90°. It should be noted that, for example, the side surfaces of plugs 18 and 19 may be perpendicular to substrate 11.

[0106] Next, the wiring layer 13 is formed on the insulation layer 16c using various processes. Figure 5N The light-emitting portion 10' formed in this manner is bonded to the driving substrate 30, with the surface S2 of the light-emitting portion 10' on the wiring layer 13 side and the surface S3 of the driving substrate 30 facing each other. Figure 5O and Figure 5P Subsequently, the substrate 11 is polished by CMP, for example, until the substrate 11 reaches a predetermined thickness. Figure 5Q ).

[0107] Next, wavelength conversion layers 21 (21R, 21G, and 21G), a spacer layer 22, and a reflective layer 23 are formed on the substrate 11. Then, a protective layer 24 and an on-chip lens 25 are formed. Figure 5R and Figure 5S In this manner, the wavelength conversion layer 20 is formed. Subsequently, openings H1 and H2 are formed in the wavelength conversion layer 20 and the light-emitting part 10 to expose the pad electrodes 13e and 13f. Thus, the light-emitting device 1 is manufactured.

[0108] Next, the effect of the light-emitting device 1 will be explained.

[0109] In this embodiment, the plug 19 electrically coupled to the compound semiconductor layer 121 and the plug 18 electrically coupled to the compound semiconductor layer 123 are positioned in a plan view not opposite to the top (mesa 12A) of the light-emitting device 11. This eliminates the need for direct coupling of the plugs to the top of the light-emitting device 11 (mesa 12A), allowing for miniaturization of the light-emitting device 11 (mesa 12A). Furthermore, even with miniaturization of the light-emitting device 11 (mesa 12A), electrical coupling to the light-emitting device 11 (mesa 12A) can be ensured. Moreover, when the light-emitting device 11 (mesa 12A) is covered by the reflective layer 17c, the plugs 18 and 19 do not become obstructions, and the top and side surfaces of the light-emitting device 11 (mesa 12A) can be covered by the reflective layer 17c without any gaps. Therefore, light leakage to adjacent pixels can be suppressed.

[0110] In this embodiment, the conductive layer connecting the light-emitting element 11 to the plug 18 is a transparent conductive layer (electrode layers 17a, 17b), and the conductive layer connecting the light-emitting element 11 to the plug 19 is a semiconductor layer of a first conductivity type (GaN-based substrate 11). As a result, even when the light-emitting device 11 is made of a GaN-based compound semiconductor, the contact resistance between the light-emitting device 11 and the electrode layers 17a, 17b, and the substrate 11 can be achieved with low resistance. It should be noted that in this embodiment, the light-emitting device 11 has a size, for example, from 5 μm to 100 μm, and the length of the wiring coupling the light-emitting device 11 and the plug 18 is also close to the size of the light-emitting device 11. Therefore, the wiring resistance of the conductive layer coupling the light-emitting device 11 and the plug 18 is sufficiently small to avoid causing actual malfunctions.

[0111] In this embodiment, the reflective layer 17c is disposed at a position opposite to the light-emitting device 11 (platform 12A), with electrode layers 16a and 16b interposed therebetween. The reflective layer 17c is formed to cover the light-emitting device 11 (platform 12A) from the top to the side. At this time, plugs 18 and 19 are disposed at positions not opposite to the top of the light-emitting device 11 (platform 12A). Therefore, when the reflective layer 17c is installed, plugs 18 and 19 do not become obstructions, and the reflective layer 17c can cover the top and side surfaces of the light-emitting device 11 (platform 12A) without any gaps. Therefore, light leakage to adjacent pixels can be suppressed.

[0112] In this embodiment, the reflective layer 17c is an electrically floating layer that is neither in contact with the electrode layers 16a and 16b nor with the substrate 11. Therefore, the wiring resistance of the reflective layer 17c does not need to be considered, and a suitable layout or material for the reflective layer 17c can be selected. Thus, light leakage to adjacent pixels can be effectively suppressed using the reflective layer 17c.

[0113] In this embodiment, plugs 18 and 19 include corresponding columnar metal members formed to fill trenches H3 and H4 formed in the insulating layer 16c. This allows the wiring resistance of plugs 18 and 19 to remain low.

[0114] In this embodiment, the plug 19 is formed to continuously (without interruption) surround the side of the light-emitting device 11 (platform 12A) in a plan view. As a result, in addition to serving as wiring to electrically connect the lead-out electrodes 15 and the substrate 11 to each other, the plug 19 functions as a pixel separator, preventing some light emitted from the light-emitting element 12 from becoming stray light propagating through the insulating layers 16a, 16b, and 16c and preventing leakage to adjacent pixels. Therefore, the plug 19 can be used to effectively suppress light leakage to adjacent pixels.

[0115] In this embodiment, the lead-out electrode 15 is formed to surround the area enclosed by the plug 19 in the plan view (without damage). As a result, in addition to serving as wiring to provide a reference potential to each light-emitting element 12, the lead-out electrode 15 functions as a pixel separator to prevent some light emitted from the light-emitting element 12 from becoming stray light propagating through the insulating layer 16c and leaking to adjacent pixels. Therefore, the lead-out electrode 15 can be used to effectively suppress light leakage to adjacent pixels.

[0116] In this embodiment, in the plan view, the vertical wiring 35 electrically coupling the lead-out electrode 14 and the driving circuit 32 to each other is located opposite the area surrounded by the lead-out electrode 15. This allows the driving signal to be supplied from the driving substrate 30 side to the light-emitting element 12 via the lead-out electrode 14 and the plug 18, even when the lead-out electrode 14 is surrounded by the lead-out electrode 15 in the plan view. Therefore, the lead-out electrode 15 can be used to effectively suppress light leakage to adjacent pixels without interfering with the wiring design.

[0117] <2. Variations>

[0118] The following is a description of a modified example of the light-emitting device 1 according to the above embodiment.

[0119] <2-1. Variation Example A>

[0120] Figure 6 It shows Figure 2 A variation of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. In the above embodiment, plugs 18 and 19 may include thin-film metal components formed along the inner walls of grooves H3 and H4 formed in the insulating layer 16c, such as... Figure 6 As shown. In this case, the manufacturing time for CVD or ALD formation can be shorter than that of the above-described embodiments. Furthermore, despite the shorter manufacturing time, a light leakage suppression effect similar to that of the above-described embodiments can be obtained.

[0121] <2-2. Variation Example B>

[0122] Figure 7 It shows Figure 2 A modified example of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. In the above embodiment and its modifications, a pad electrode 18a may be provided between the plug 18 and the electrode layer 17b, and a pad electrode 18b may be provided between the plug 19 and the substrate 11. The pad electrodes 18a and 18b may, for example, include Cu. In this case, the pad electrode 18a allows for a reduction in the electrical contact resistance between the plug 18 and the electrode 17b, and the pad electrode 19a allows for a reduction in the electrical contact resistance between the plug 19 and the substrate 11. Furthermore, by providing the pad electrodes 18b and 19a, light leakage to adjacent pixels can be suppressed.

[0123] <2-3. Variation C>

[0124] Figure 8 It shows Figure 2 A modified example of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. For example, such as... Figure 8 As shown, at least a portion of the end of the reflective layer 17c (e.g., Figure 8 The region surrounded by region α can be formed in the same layer as the end of electrode layer 17b. In this case, compared with the above embodiment, the proportion of light emitted from light-emitting device 11 (platform 12A) becoming stray light through the gap between reflective layer 17c and plug 19 can be reduced. Therefore, light leakage to adjacent pixels can be suppressed more effectively.

[0125] <2-4. Variation Example D>

[0126] Figure 9 It shows Figure 3 A modified example of the cross-sectional arrangement of the plug 19. In the above embodiments and their modifications, the plug 19 may be formed to continuously surround the side surface (table surface 12A) of the light-emitting device 11 in a plan view, for example, as shown in the example. Figure 9 As shown. Even in this case, compared to the case where the side of the light-emitting device 11 (platform 12A) A is not surrounded by the plug 19, the plug 19 can be used to effectively suppress light leakage to adjacent pixels.

[0127] <2-5. Variation E>

[0128] Figure 10 It shows Figure 3 A modified example of the cross-sectional configuration of the plug 19. In the above embodiments and their modifications, for example, as... Figure 10As shown, the plug 19 can be formed to partially surround the side of the light-emitting device 11 (platform 12A) in a plan view. In this case, a portion of the plug 19 can also be split to form an opening 19b. In this case, compared to the case where the side of the light-emitting device 11 (platform 12A) is not surrounded by the plug 19, the plug 19 can be used to effectively suppress light leakage to adjacent pixels.

[0129] Meanwhile, the opening 19b can be located adjacent to the plug 19, for example, Figure 10 As shown in the diagram. In this case, when the light-emitting part 10 is integrated, interference between the plug 19 and the plug 18 can be avoided. Therefore, the light-emitting part 10 can be further integrated.

[0130] <2-6. Variation Example F>

[0131] Figure 11 It shows Figure 1 A modified example of the cross-sectional arrangement of the light-emitting device 1 in the above embodiment and its modifications, such as Figure 11 As shown in the diagram, at the location surrounded by region β, vertical wiring 35 and pad electrodes 36 can be provided to electrically couple the plug 19 included in at least one of the plurality of pixels to the support substrate 31 or the driving circuit 32. In this case, for example, further integration of the light-emitting portion 10 is possible due to the increased degree of freedom in the layout of the wiring layer 13 in the light-emitting portion 10.

[0132] <2-7. Variation Example G>

[0133] Figure 12 It shows Figure 2 A modified example of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. In the above embodiments and their modifications, for example, as... Figure 12 As shown, a dielectric multilayer film 16b' can be used instead of the insulating layer 16b. The dielectric multilayer film 16b' contacts the surface of the reflective layer 17c on the light-emitting device 11 (platform 12A) side. The dielectric multilayer film 16b' comprises four or more dielectric films (thin films), wherein two layers in contact with each other have different refractive indices. For example, SiO2 or SiN is used for the dielectric multilayer film 16b'. This allows the composite layer of the reflective layer 17c and the dielectric multilayer film 16b' to reflect light emitted from the light-emitting device 11 (platform 12A). As a result, insufficient reflectivity can be compensated, making it possible to more effectively suppress light leakage to adjacent pixels.

[0134] It should be noted that some of the layers included in the dielectric multilayer film 16b' may include metals or metal compounds, with the main components being, for example, Ti, W, Ni, T, Cu, or Au. Even in this case, the dielectric multilayer film 16b' can be used to compensate for insufficient reflectivity, thus more effectively suppressing light leakage to adjacent pixels.

[0135] <2-8. Variation H>

[0136] Figure 13 It shows Figure 2 A modified example of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. In the above embodiments and their modifications, for example, as... Figure 13 As shown, a stacked reflective film 17c' can be provided instead of the reflective layer 17c. The stacked reflective film 17c is a stacked reflective film that includes, for example, a first reflective metal layer constituting the surface of the light-emitting device 11 (table surface 12A) and a second reflective metal layer constituting the surface of the opposite side of the light-emitting device 11 (table surface 12A).

[0137] Here, the second reflective metal layer comprises a material that allows the second reflective metal layer to have a lower reflectivity for the wavelength of light emitted from the light-emitting device 11 (platform 12A) than the first reflective metal layer to the wavelength of light emitted from the light-emitting device 11 (platform 12A). The first reflective metal layer comprises, for example, a material containing Ag or Al as its main component. The second reflective metal layer comprises, for example, a material containing Ti, Ni, Ta, or W as its main component.

[0138] In this modified example, a stacked reflective film 17c' is provided. As a result, the light output from the light-emitting element 12, which becomes stray light and propagates through the insulating layers 16a, 16b, and 16c, is attenuated due to reflection at the second reflective metal layer. Therefore, light leakage to adjacent pixels can be suppressed.

[0139] <2-9. Variation Example I>

[0140] Figure 14 It shows Figure 2 A modified example of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. In the above embodiment and its modifications, the reflective layer 17c may contact the electrode layer 17b, for example, as... Figure 14 The region surrounded by region γ is shown in the diagram. In this case, compared to the embodiment described above, the end of the reflective layer 17c can be made closer to the foot (foot region 11A) of the platform 12A. Compared to the embodiment described above, this reduces the proportion of light emitted from the light-emitting device 11 (platform 12A) that passes through the gap between the reflective layer 17c and the plug 19 and becomes stray light. Therefore, light leakage to adjacent pixels can be further suppressed.

[0141] <2-10. Variation Example J>

[0142] Figure 15 It shows Figure 2 A modified example of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. In the above embodiments and their modifications, the reflective layer 17c may contact the substrate 11, for example, as... Figure 15 The region surrounded by region δ is shown in the diagram. In this case, compared to the embodiment described above, the end of the reflective layer 17c can be made closer to the foot (foot region 11A) of the platform 12A. Compared to the embodiment described above, this reduces the proportion of light emitted from the light-emitting device 11 (platform 12A) that passes through the gap between the reflective layer 17c and the plug 19 and becomes stray light. Therefore, light leakage to adjacent pixels can be further suppressed.

[0143] <2-11. Variation Example K>

[0144] Figure 16 It shows Figure 2 A modified example of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. In the above embodiment and its modifications, the substrate 11 can be thin enough to not contact the area of ​​the electrode layer 17b that contacts the plug 18 (the portion corresponding to the foot (foot 41A) of the platform surface 12A).

[0145] At this time, an insulating layer 41 can be provided on the surface of the compound semiconductor layer 121 and the surface of the electrode layer 17a. The insulating layer 41 is a layer for protecting the surface of the compound semiconductor layer 121 and the surface of the electrode layer 17a, and is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0146] In this way, in this modified example, since there is no substrate 11 on the area of ​​electrode layer 17a that contacts plug 18 (leg 41A), the proportion of light emitted from light-emitting element 12 that becomes stray light and propagates through substrate 11 can be reduced. As a result, light leakage to adjacent pixels can be further suppressed.

[0147] Meanwhile, in this modified example, at least a portion of the end of the reflective layer 17c can be formed in the same layer as the end of the electrode layer 17b, for example, as Figure 16 The region surrounded by region ε is shown in the diagram. In this case, compared to the embodiment described above, the end of the reflective layer 17c can be made closer to the foot (foot region 11A) of the platform 12A. Compared to the embodiment described above, this reduces the proportion of light emitted from the light-emitting device 11 (platform 12A) that passes through the gap between the reflective layer 17c and the plug 19 and becomes stray light. Therefore, light leakage to adjacent pixels can be further suppressed.

[0148] <2-12. Variation Example L>

[0149] Figure 17 It shows Figure 2 A modified example of the cross-sectional arrangement of the light-emitting device 11 and its vicinity. In the above embodiments and their modifications, for example, as... Figure 17 As shown, the substrate 11 can be removed and a conductive layer 42 and an insulating layer 41 can be provided in place of the substrate 11. The conductive layer 42 corresponds to a specific example of a "first conductive layer" or "first transparent conductive layer" according to an embodiment of the present disclosure.

[0150] The conductive layer 42 contacts the bottom surface (mesa 12A) of the light-emitting device 11, the surface of the insulating layer 16a, and the end of the plug 19, and is electrically coupled to the compound semiconductor layer 121 and the plug 19. The conductive layer 42 contacts the compound semiconductor layer 121 and extends to the foot of the mesa 12A. A portion of the conductive layer 42 corresponding to the foot of the mesa 12A is referred to as the foot region 42A. The conductive layer 42 includes, for example, a material common to the electrode layers 17a and 17b (e.g., indium-based transparent conductive material, tin-based transparent conductive material, or zinc-based transparent conductive material). The insulating layer 41 is a layer for protecting the surface of the conductive layer 42 and contacts the surface of the conductive layer 42. In the above embodiment, in Figure 5P After the process, when the substrate 11 is removed by etching, the conductive layer 42 can be used as an etching stop layer.

[0151] In this modified example, substrate 11 is removed. Therefore, some of the light emitted from light-emitting element 12 no longer becomes stray light and propagates through substrate 11. As a result, light leakage to adjacent pixels can be further suppressed.

[0152] Meanwhile, in this modified example, at least a portion of the end of the reflective layer 17c can be formed in the same layer as the end of the electrode layer 17b, such as... Figure 17 The region surrounded by region ζ is shown in the diagram. In this case, compared to the embodiment described above, the end of the reflective layer 17c can be made closer to the foot (foot region 42A) of the platform 12A. Compared to the embodiment described above, this reduces the proportion of light emitted from the light-emitting device 11 (platform 12A) that passes through the gap between the reflective layer 17c and the plug 19 and becomes stray light. Therefore, light leakage to adjacent pixels can be further suppressed.

[0153] As described above, this disclosure has been described by referring to embodiments, variations thereof, application examples, and implementation examples. However, this disclosure is not limited to the above embodiments, and various modifications are possible. It should be noted that the effects described herein are merely exemplary. The effects of this disclosure are not limited to those described herein. This disclosure may have effects other than those described herein.

[0154] For example, in the above embodiments and their variations, such as... Figure 18 As shown, the light-emitting device 1 may have multiple pixels (Pr, Pg and Pb) arranged in two dimensions in a planar view.

[0155] Furthermore, for example, in the above embodiments and their variations, the substrate 11 and the light-emitting element 12 may include InP-based compound semiconductors. Examples of InP-based compound semiconductors include, for example, InP, GaInP, AlGaInP, etc. Furthermore, for example, in the above embodiments and their variations, the substrate 11 and the light-emitting element 12 may include GaP-based compound semiconductors.

[0156] Furthermore, for example, in the above embodiments and their variations, the light-emitting device 11 may be allowed to output light in the green or red region.

[0157] For example, this disclosure can also be configured as follows. (1)

[0159] A light-emitting device, comprising:

[0160] A mesa-type light-emitting element includes an active layer and a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type sandwiched in between. The mesa-type light-emitting element has a second compound semiconductor layer on top.

[0161] A first conductive layer is in contact with the first compound semiconductor layer and extends at the feet of the mesa-shaped light-emitting element;

[0162] The second conductive layer is in contact with the second compound semiconductor layer and extends at the feet of the mesa-shaped light-emitting element;

[0163] A first contact plug is positioned in a location not opposite the top in the plan view and is electrically coupled to a first compound semiconductor via a first conductive layer; and

[0164] The second contact plug is disposed at a position not opposite to the top in the plan view and is electrically coupled to the second compound semiconductor via the second conductive layer. (2)

[0166] According to the light-emitting device described in (1), wherein,

[0167] The first conductive layer includes a semiconductor layer of the first conductivity type or a first transparent conductive layer, and

[0168] The second conductive layer includes a second transparent conductive layer. (3)

[0170] According to the light-emitting device described in (2), the mesa-type light-emitting element includes a GaN-based compound semiconductor. (4)

[0172] According to the light-emitting device described in (2), the mesa-type light-emitting element includes a GaP-based compound semiconductor. (5)

[0174] The light-emitting device according to any one of (2) to (4) further comprises:

[0175] A reflective metal layer is disposed at a position opposite to the mesa-shaped light-emitting element, and a second conductive layer is disposed between the reflective metal layer and the mesa-shaped light-emitting element. The reflective metal layer is formed to cover the mesa-shaped light-emitting element from the top to the side surface. (6)

[0177] According to the light-emitting device of (5), at least a portion of the end of the reflective metal layer is formed in the same layer as the end of the second conductive layer. (7)

[0179] According to the light-emitting device described in (5) or (6), wherein,

[0180] The reflective metal layer includes a stacked reflective film, which includes a first reflective metal layer and a second reflective metal layer. The first reflective metal layer forms a surface on one side of the mesa-shaped light-emitting element, and the second reflective metal layer forms a surface on the opposite side of the mesa-shaped light-emitting element.

[0181] The second reflective metal layer includes a material that allows the second reflective metal layer to have a lower reflectivity for the wavelength of light emitted from the mesa-type light-emitting element than the first reflective metal layer to the wavelength of light emitted from the mesa-type light-emitting element. (8)

[0183] The light-emitting device according to any one of (5) to (7) wherein the reflective metal layer includes an electroflotation layer that is not in contact with either the first conductive layer or the second conductive layer. (9)

[0185] The light-emitting device according to any one of (5) to (7) wherein the reflective metal layer is in contact with the first conductive layer or the second conductive layer. (10)

[0187] The light-emitting device according to any one of (5) to (9) further comprises:

[0188] A dielectric multilayer film is provided, wherein the dielectric multilayer film is in contact with the reflective metal layer on one side of the mesa-shaped light-emitting element, wherein...

[0189] The dielectric multilayer film comprises four or more dielectric films, wherein two layers in contact with each other have different refractive indices. (11)

[0191] The light-emitting device according to any one of (1) to (10) further comprises:

[0192] An insulating layer is formed in which the mesa-shaped light-emitting element, the first contact plug, and the second contact plug are embedded.

[0193] The first contact plug and the second contact plug include corresponding columnar metal members formed to fill the grooves formed in the insulating layer. (12)

[0195] The light-emitting device according to any one of (1) to (10) further comprises:

[0196] An insulating layer is formed in which the mesa-shaped light-emitting element, the first contact plug, and the second contact plug are embedded.

[0197] The first contact plug and the second contact plug include corresponding thin-film metal components formed along the inner wall of a groove formed in the insulating layer. (13)

[0199] The light-emitting device according to any one of (1) to (12), wherein, in a plan view, the first contact plug is formed to continuously, intermittently, or partially surround the side surface of the mesa-type light-emitting element. (14)

[0201] According to the light-emitting device described in (13), in a plan view, the second contact plug is formed in the area surrounded by the first contact plug. (15)

[0203] The light-emitting device according to (14) further includes:

[0204] The first lead-out electrode contacts the first contact plug; and

[0205] The second lead electrode contacts the second contact plug, wherein...

[0206] The first lead electrode is formed to continuously surround the area surrounded by the first contact plug in a planar view, and

[0207] The second lead electrode is formed in the region surrounded by the first lead electrode in the plan view. (16)

[0209] The light-emitting device according to (15) further includes:

[0210] A wavelength conversion layer is disposed at a position opposite to the first compound semiconductor layer and is configured to convert the wavelength of light output from the mesa-type light-emitting element;

[0211] A driving circuit is positioned opposite the wavelength conversion layer; a mesa-type light-emitting element is located between the driving circuit and the wavelength conversion layer; and the driving circuit drives the mesa-type light-emitting element.

[0212] A vertical wiring is provided at a position opposite to the area surrounded by the first lead electrode in the plan view, and the second lead electrode is electrically coupled to the drive circuit. (17)

[0214] A light-emitting device, comprising:

[0215] Multiple pixels arranged in a two-dimensional manner, among which

[0216] Each pixel includes:

[0217] A mesa-type light-emitting element includes an active layer and a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type sandwiched in between. The mesa-type light-emitting element has a second compound semiconductor layer on top.

[0218] A first conductive layer is in contact with the first compound semiconductor layer and extends at the feet of the mesa-shaped light-emitting element;

[0219] The second conductive layer is in contact with the second compound semiconductor layer and extends at the feet of the mesa-shaped light-emitting element;

[0220] A first contact plug is positioned in a location not opposite the top in the plan view and is electrically coupled to a first compound semiconductor via a first conductive layer; and

[0221] The second contact plug is disposed at a position not opposite to the top in the plan view and is electrically coupled to the second compound semiconductor via the second conductive layer. (18)

[0223] The light-emitting device according to (17) further includes:

[0224] The first lead-out electrode makes contact with the first contact plug of each pixel; and

[0225] A plurality of second lead electrodes, each second lead electrode disposed in each pixel and in contact with the second contact plug, wherein...

[0226] In each pixel, the first contact plug is formed to continuously, intermittently, or partially surround the side surface of the mesa-type light-emitting element.

[0227] In each pixel, a second contact plug is formed in the area surrounded by the first contact plug.

[0228] The first lead electrode is formed to continuously surround the area surrounded by the first contact plug in a planar view, and

[0229] The second lead electrode is formed in the region surrounded by the first lead electrode in the plan view. (19)

[0231] According to the light-emitting device described in (18), wherein,

[0232] Each pixel further includes a wavelength conversion layer disposed at a position opposite to the first compound semiconductor layer and configured to convert the wavelength of light emitted from the mesa-type light-emitting element.

[0233] The light-emitting device further includes:

[0234] A driving circuit is positioned opposite the wavelength conversion layer. Mesa-type light-emitting elements are located between the driving circuit and the wavelength conversion layer. The driving circuit drives the mesa-type light-emitting elements of each pixel.

[0235] Multiple vertical wirings are provided, each positioned opposite the region surrounded by the first lead electrode, and electrically coupling the second lead electrode of the corresponding pixel and the driving circuit to each other.

[0236] This application claims the benefit of Japanese priority patent application JP2023-059192, filed with the Japan Patent Office on March 31, 2023, the entire contents of which are incorporated herein by reference.

[0237] Those skilled in the art will understand that various variations, combinations, sub-combinations and modifications may occur depending on design requirements and other factors, as long as they are within the scope of the appended claims or their equivalents.

Claims

1. A light-emitting device, comprising: A mesa-type light-emitting element includes an active layer and a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type sandwiched between the active layer, wherein the mesa-type light-emitting element has the second compound semiconductor layer on top; A first conductive layer is in contact with the first compound semiconductor layer and extends at the feet of the mesa-shaped light-emitting element; The second conductive layer is in contact with the second compound semiconductor layer and extends at the feet of the mesa-shaped light-emitting element; The first contact plug is disposed at a position not opposite to the top in the plan view, and is electrically coupled to the first compound semiconductor via the first conductive layer; as well as The second contact plug is disposed at a position not opposite to the top in the plan view and is electrically coupled to the second compound semiconductor via the second conductive layer.

2. The light-emitting device according to claim 1, wherein, The first conductive layer includes a semiconductor layer of the first conductivity type or a first transparent conductive layer, and The second conductive layer includes a second transparent conductive layer.

3. The light-emitting device according to claim 2, wherein, The mesa-type light-emitting element includes a GaN-based compound semiconductor.

4. The light-emitting device according to claim 2, wherein, The mesa-type light-emitting element includes a GaP-based compound semiconductor.

5. The light-emitting device according to claim 2, further comprising: A reflective metal layer is disposed at a position opposite to the mesa-shaped light-emitting element, and a second conductive layer is disposed between the reflective metal layer and the mesa-shaped light-emitting element. The reflective metal layer is formed to cover the mesa-shaped light-emitting element from the top to the side surface.

6. The light-emitting device according to claim 5, wherein, At least a portion of the end of the reflective metal layer is formed in the same layer as the end of the second conductive layer.

7. The light-emitting device according to claim 5, wherein, The reflective metal layer includes a stacked reflective film, which includes a first reflective metal layer and a second reflective metal layer. The first reflective metal layer forms a surface on one side of the mesa-shaped light-emitting element, and the second reflective metal layer forms a surface on the opposite side of the mesa-shaped light-emitting element. The second reflective metal layer includes a material that allows the second reflective metal layer to have a lower reflectivity for the wavelength of light emitted from the mesa-type light-emitting element than the first reflective metal layer to the wavelength of light emitted from the mesa-type light-emitting element.

8. The light-emitting device according to claim 5, wherein, The reflective metal layer includes an electroflotation layer that is neither in contact with the first conductive layer nor the second conductive layer.

9. The light-emitting device according to claim 5, wherein, The reflective metal layer is in contact with the first conductive layer or the second conductive layer.

10. The light-emitting device according to claim 5, further comprising: A dielectric multilayer film is provided, wherein the dielectric multilayer film is in contact with the reflective metal layer on one side of the mesa-shaped light-emitting element, wherein... The dielectric multilayer film comprises four or more dielectric films, wherein two layers in contact with each other have different refractive indices.

11. The light-emitting device according to claim 1, further comprising: An insulating layer is formed in which the mesa-shaped light-emitting element, the first contact plug, and the second contact plug are embedded. The first contact plug and the second contact plug include corresponding columnar metal members formed to fill the grooves formed in the insulating layer.

12. The light-emitting device according to claim 1, further comprising: An insulating layer is formed in which the mesa-shaped light-emitting element, the first contact plug, and the second contact plug are embedded. The first contact plug and the second contact plug include corresponding thin-film metal components formed along the inner wall of a groove formed in the insulating layer.

13. The light-emitting device according to claim 1, wherein, In the plan view, the first contact plug is formed to continuously, intermittently, or partially surround the side surface of the mesa-type light-emitting element.

14. The light-emitting device according to claim 13, wherein, In the plan view, the second contact plug is formed in the area surrounded by the first contact plug.

15. The light-emitting device according to claim 14, further comprising: The first lead electrode is in contact with the first contact plug; as well as The second lead electrode contacts the second contact plug, wherein... The first lead electrode is formed to continuously surround the area surrounded by the first contact plug in a planar view, and The second lead electrode is formed in the region surrounded by the first lead electrode in the plan view.

16. The light-emitting device according to claim 15, further comprising: A wavelength conversion layer is disposed at a position opposite to the first compound semiconductor layer and is configured to convert the wavelength of light output from the mesa-type light-emitting element; A driving circuit is arranged at a position opposite to the wavelength conversion layer, and the mesa-shaped light-emitting element is located between the driving circuit and the wavelength conversion layer. The driving circuit drives the mesa-shaped light-emitting element. as well as A vertical wiring is arranged at a position opposite to the area surrounded by the first lead electrode in the plan view, and the second lead electrode is electrically coupled to the drive circuit.

17. A light-emitting device, comprising: Multiple pixels arranged in a two-dimensional pattern, among which, Each pixel includes: A mesa-type light-emitting element includes an active layer and a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type sandwiched in between, wherein the mesa-type light-emitting element has the second compound semiconductor layer on top; A first conductive layer is in contact with the first compound semiconductor layer and extends at the feet of the mesa-shaped light-emitting element; The second conductive layer is in contact with the second compound semiconductor layer and extends at the feet of the mesa-shaped light-emitting element; A first contact plug is disposed at a position not opposite to the top in the plan view, and is electrically coupled to the first compound semiconductor via the first conductive layer; and The second contact plug is disposed at a position not opposite to the top in the plan view and is electrically coupled to the second compound semiconductor via the second conductive layer.

18. The light-emitting device according to claim 17, further comprising: The first lead electrode contacts the first contact plug of each pixel; as well as Multiple second lead-out electrodes, each second lead-out electrode disposed in each pixel and in contact with the second contact plug, wherein... In each pixel, the first contact plug is formed to continuously, intermittently, or partially surround the side surface of the mesa-shaped light-emitting element. In each pixel, the second contact plug is formed in the area surrounded by the first contact plug. The first lead electrode is formed to continuously surround the area surrounded by the first contact plug in a planar view, and The second lead electrode is formed in the region surrounded by the first lead electrode in the plan view.

19. The light-emitting device according to claim 18, wherein, Each pixel further includes a wavelength conversion layer disposed at a position opposite to the first compound semiconductor layer and configured to convert the wavelength of light emitted from the mesa-type light-emitting element. The light-emitting device further includes: A driving circuit is arranged opposite the wavelength conversion layer, and the mesa-shaped light-emitting element is located between the driving circuit and the wavelength conversion layer. The driving circuit drives the mesa-shaped light-emitting element of each pixel. Multiple vertical wirings are provided, each positioned opposite the region surrounded by the first lead electrode, and electrically coupling the second lead electrode of the corresponding pixel and the driving circuit to each other.

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