Modularized IGBT driving circuit board

Abstract

The invention discloses a modularized IGBT (Insulated Gate Bipolar Translator) driving circuit board, which comprises a high-speed signal processing circuit, an isolating circuit, a driving circuit and a bottom board circuit, and is characterized in that the high-speed signal processing circuit, the isolating circuit and the bottom board circuit are respectively connected with the driving circuit, and the high-speed signal processing circuit, the isolating circuit and the driving circuit are integrated on a driving board; a PIN output row is installed on the lower end face of the driving board, the bottom board circuit is integrated on the bottom board, a power strip corresponding to the PIN output row is installed on the bottom board, a driving chip, a high-speed signal processing chip, an isolation transformer and a high-frequency rectifier are modularized, the on-off time is compressed to be below 10 ns by optimizing a signal transmission path, and the switching speed is remarkably improved. Meanwhile, a dynamic protection mechanism is built in the driving core, hardware latch is triggered immediately when undervoltage is detected by using a real-time voltage monitoring circuit, soft turn-off is realized through a grading discharge grid charge technology, and the damage of a voltage peak to the IGBT is effectively inhibited.

Description

TECHNICAL FIELD

[0001] The application relates to a modular IGBT drive circuit board. BACKGROUND

[0002] At present, the design of an IGBT drive circuit is usually customized for a specific module, resulting in the need for redesign of a drive system for IGBT modules of different voltage levels or packaging forms. The traditional scheme has obvious limitations: the drive signal is high in delay due to a long circuit path and is prone to interference from parasitic inductance; the protection function (such as under-voltage and over-current protection) is deeply bound with the drive core hardware, and it is difficult to flexibly extend; the drive power supply and the signal processing unit are dispersedly arranged, which not only occupies a large space, but also has high maintenance cost. In addition, the interface between the drive circuit and the IGBT module is fixed, and when the module is replaced, the hardware needs to be completely reformed, which seriously restricts the efficiency of equipment upgrading. Therefore, there is an urgent need for a drive scheme with rapid response, multiple protection and modular adaptation capability to meet the dual requirements of flexibility and reliability in industrial applications. SUMMARY

[0003] The purpose of the application is to optimize the signal transmission path and significantly improve the switching speed in view of the problems of complex structure of the existing drive circuit and high delay of the drive signal.

[0004] The technical scheme of the application is as follows: A modular IGBT drive circuit board comprises a high-speed signal processing circuit, an isolation circuit, a drive circuit and a bottom plate circuit, wherein the high-speed signal processing circuit, the isolation circuit and the bottom plate circuit are connected with the drive circuit respectively, the high-speed signal processing circuit, the isolation circuit and the drive circuit are integrated on a drive plate, a PIN output row is installed on the lower end face of the drive plate, the bottom plate circuit is integrated on a bottom plate, and a plug row corresponding to the PIN output row is installed on the bottom plate.

[0005] The high-speed signal processing circuit comprises a pulse width modulation chip, a 1-pin of the pulse width modulation chip is connected with a resistor R27, the other end of the resistor R27 is connected with a 9-pin of the pulse width modulation chip and a capacitor C13, and the capacitor C13 is grounded; a 2-pin inputs a reference voltage REF, a 3-pin, a 4-pin, a 5-pin, a 6-pin and an 8-pin are grounded through a resistor R19, a resistor R20, a capacitor C11, a resistor R22 and a capacitor C12 respectively, a 7-pin is connected with the 6-pin through a resistor R24, a 16-pin outputs the reference voltage REF through a resistor R21, a 15-pin is connected with a power supply VCC, a 14-pin and an 11-pin are connected with the isolation circuit, a 12-pin is grounded, a 10-pin is grounded through a resistor R26, and a 13-pin and a 16-pin are grounded through a capacitor C22.

[0006] The isolation circuit comprises an operational amplifier U8, the 2nd pin and the 4th pin of the operational amplifier U8 are connected with the 14th pin and the 11th pin of the pulse width modulation chip respectively, the 3rd pin is grounded, the 6th pin is connected with the power supply VCC_15V, the 7th pin and the 8th pin are connected with the resistor R29 and the resistor R31 respectively; the resistor R29 is connected with the gate of the MOS tube Q1 and grounded through the resistor R32, the drain of the MOS tube Q1 is connected with the 1st pin of the ring transformer T, and the source is grounded; the resistor R31 is connected with the gate of the MOS tube Q2 and grounded through the resistor R33, the source of the MOS tube is grounded, and the drain is connected with the 4th pin of the ring transformer T; The 2nd pin and the 3rd pin of the ring transformer T are connected with the VDC power supply, the 8th pin and the 7th pin and the 6th pin and the 5th pin are connected with one side of the first rectifier bridge and the second rectifier bridge respectively; The other side of the first rectifier bridge is connected with the cathode of the diode D5 and one end of the resistor R28 respectively, the other end of the resistor R28 is connected with the anode of the diode D5, the base of the triode Q3 and one end of the capacitor C20, the cathode of the diode D5, the other end of the capacitor C20, the capacitor C14 are connected with the power supply VCC_ISO1, the resistor R28, the collector of the triode Q3 and the capacitor C15 are connected with the power supply VEE_ISO1, the emitter of the triode Q3, the capacitor C14 and the capacitor C15 are connected with the ground node GND_ISO1; The other side of the second rectifier bridge is connected with the cathode of the diode D10 and one end of the resistor R30 respectively, the other end of the resistor R30 is connected with the anode of the diode D10, the base of the triode Q4 and one end of the capacitor C21, the cathode of the diode D10, the other end of the capacitor C21, the capacitor C16 are connected with the power supply VCC_ISO2, the resistor R30, the collector of the triode Q4 and the capacitor C17 are connected with the power supply VEE_ISO2, the emitter of the triode Q4, the capacitor C16 and the capacitor C17 are connected with the ground node GND_ISO2.

[0007] The driving circuit comprises an isolated gate driver U5, the 1st pin, the 5th pin, the 6th pin and the 8th pin of the isolated gate driver U5 are connected with the power supply VEE_ISO1, the power supply VCC_ISO1, the ground node GND_ISO1 and the power supply VEE_ISO1 respectively, the 2nd pin, the 3rd pin, the 4th pin and the 7th pin are connected with the bottom plate circuit, the 9th pin, the 10th pin and the 12th pin are grounded, the 11th pin is connected with the power supply VCC_15V, the 13th pin is connected with the fault processing signal UVLOL, the 14th pin outputs the fault signal FAULTL, the 13th pin and the 14th pin are connected with the power supply VCC through resistors respectively and grounded through resistors respectively, and the 15th pin is connected with the driving signal DRVL through the resistor R17 and grounded through the resistor R15.

[0008] The bottom plate circuit comprises a series of forwardly connected voltage stabilizing diodes D15, D16, D17 and D18, the cathode of the voltage stabilizing diode D18 is connected with the cathode of the voltage stabilizing diode D20 and a C1 signal output point, the anode of the voltage stabilizing diode D20 is connected with the cathode of the voltage stabilizing diode D19, the anode of the voltage stabilizing diode D19 is connected with a resistor R5, the resistor R5 is connected with the 7th pin of the isolation gate driver U5, and is grounded through a diode D22 and a capacitor C23; The anode of the voltage stabilizing diode D15 is connected with the anode of a diode D21, the cathode of the diode D21 is connected with a G1 signal output point, the G1 signal output point is also connected with the 3rd pin and the 4th pin of the isolation gate driver U5 through driving resistors respectively, the G1 signal output point is also connected with a power supply VCC_ISO1 through a diode D23, and is grounded through a parallel connected bidirectional diode D24, a resistor R6 and a capacitor C24.

[0009] The present application has the following beneficial effects: The driving chip, the high-speed signal processing chip, the isolation transformer and the high-frequency rectifier are modularized, the opening and closing time is compressed to below 10 ns through optimization of the signal transmission path, and the switching speed is significantly improved. Meanwhile, the dynamic protection mechanism is built in the driving core: the real-time voltage monitoring circuit is used to trigger the hardware latch immediately when the undervoltage is detected, and the soft shutdown is realized through the hierarchical gate charge discharge technology, so that the damage of the voltage spike to the IGBT is effectively inhibited. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a front structure schematic diagram of the driving board.

[0011] Figure 2 is a back structure schematic diagram of the driving board.

[0012] Figure 3 is a structure schematic diagram of the high-speed signal processing circuit.

[0013] Figure 4 is a structure schematic diagram of the isolation circuit.

[0014] Figure 5 is a structure schematic diagram of the driving circuit.

[0015] Figure 6 is a structure schematic diagram of the bottom plate circuit.

[0016] Figure 7 is a structure schematic diagram of the assembly of the driving board and the bottom plate.

[0017] Figure 8 is a data diagram of the closing time of the driving circuit board.

[0018] Figure 9This is a graph showing the rise time data of the drive circuit.

[0019] Figure 10 This is a data graph of the soft-turn-off time of the drive circuit.

[0020] Attached label: 1-Driver board, 2-Transformer, 3-PIN output bar, 4-MOSFET, 5-Heat dissipation hole, 6-Base plate, 7-External connector, 8-Chip. Detailed Implementation

[0021] Example 1: like Figure 1 As shown, a modular IGBT driver circuit board includes a high-speed signal processing circuit, an isolation circuit, a driver circuit, and a baseboard circuit. The high-speed signal processing circuit, isolation circuit, and baseboard circuit are connected to the driver circuit and are integrated on a driver board. A PIN output bar is mounted on the lower surface of the driver board, and the baseboard circuit is integrated on the baseboard, which has connectors corresponding to the PIN output bar. The driver baseboard acts as an adapter layer, employing a standardized interface design (PIN pin interface) and integrating anti-backflashover and gate charge discharge circuits. By adjusting the parameters of the driver baseboard (such as matching the input capacitors of different IGBTs), the same driver core can adapt to a full range of modules from 1200V to 6500V, solving the compatibility problem of the traditional "one module, one driver" solution. The driver core and driver baseboard are combined by soldering or plugging, ensuring signal integrity while requiring only the replacement of a single component during maintenance, significantly reducing equipment downtime. Figure 7 As shown, a multi-layer PCB design is employed, embedding an electromagnetic shielding layer and a heat-dissipating metal substrate, which improves electromagnetic compatibility by more than 60% and reduces thermal resistance to 0.5℃ / W. This design is particularly suitable for applications with stringent space and reliability requirements, such as new energy inverters and rail transit converters.

[0022] like Figure 3 As shown, the high-speed signal processing circuit includes a pulse width modulation chip. Pin 1 of the pulse width modulation chip is connected to resistor R27. The other end of resistor R27 is connected to pin 9 of the pulse width modulation chip and capacitor C13, which is grounded. Pin 2 inputs the reference voltage REF. Pins 3, 4, 5, 6, and 8 are grounded through resistors R19, R20, C11, R22, and C12, respectively. Pin 7 is connected to pin 6 through resistor R24. Pin 16 outputs the reference voltage REF through resistor R21. Pin 15 is connected to the power supply VCC. Pins 14 and 11 are connected to the isolation circuit. Pin 12 is grounded. Pin 10 is grounded through resistor R26. Pins 13 and 16 are grounded through capacitor C22.

[0023] like Figure 4As shown, the isolation circuit includes operational amplifier U8. Pins 2 and 4 of operational amplifier U8 are connected to pins 14 and 11 of the pulse width modulation chip, respectively. Pin 3 is grounded, pin 6 is connected to power supply VCC_15V, and pins 7 and 8 are connected to resistors R29 and R31, respectively. Resistor R29 is connected to the gate of MOSFET Q1 and grounded through resistor R32. The drain of MOSFET Q1 is connected to pin 1 of the toroidal transformer T, and its source is grounded. Resistor R31 is connected to the gate of MOSFET Q2 and grounded through resistor R33. The source of the MOSFET is grounded, and its drain is connected to pin 4 of the toroidal transformer T. Pins 2 and 3 of the toroidal transformer T are connected to the VDC power supply, and pins 8 and 7, and pins 6 and 5 are connected to one side of the first rectifier bridge and the second rectifier bridge, respectively. The other side of the first rectifier bridge is connected to the cathode of diode D5 and one end of resistor R28. The other end of resistor R28 is connected to the anode of diode D5, the base of transistor Q3, and one end of capacitor C20. The cathode of diode D5, the other end of capacitor C20, and capacitor C14 are connected to power supply VCC_ISO1. Resistor R28, collector of transistor Q3, and capacitor C15 are connected to power supply VEE_ISO1. The emitter of transistor Q3, capacitor C14, and capacitor C15 are connected to ground node GND_ISO1. The other side of the second rectifier bridge is connected to the cathode of diode D10 and one end of resistor R30. The other end of resistor R30 is connected to the anode of diode D10, the base of transistor Q4, and one end of capacitor C21. The cathode of diode D10, the other end of capacitor C21, and capacitor C16 are connected to power supply VCC_ISO2. Resistor R30, collector of transistor Q4, and capacitor C17 are connected to power supply VEE_ISO2. The emitter of transistor Q4, capacitor C16, and capacitor C17 are connected to ground node GND_ISO2.

[0024] like Figure 5 As shown, the driving circuit includes an isolated gate driver U5. Pins 1, 5, 6, and 8 of the isolated gate driver U5 are connected to power supply VEE_ISO1, power supply VCC_ISO1, ground node GND_ISO1, and power supply VEE_ISO1, respectively. Pins 2, 3, 4, and 7 are connected to the baseboard circuit. Pins 9, 10, and 12 are grounded. Pin 11 is connected to power supply VCC_15V. Pin 13 is connected to the fault handling signal UVLOL. Pin 14 outputs the fault signal FAULTL. Pins 13 and 14 are connected to power supply VCC through resistors and grounded through resistors. Pin 15 is connected to the drive signal DRVL through resistor R17 and grounded through resistor R15.

[0025] like Figure 6As shown, the base circuit includes Zener diodes D15, D16, D17, and D18 connected in forward direction in sequence. The cathode of Zener diode D18 is connected to the cathode of Zener diode D20 and connected to the signal output point C1. The anode of Zener diode D20 is connected to the cathode of Zener diode D19. The anode of Zener diode D19 is connected to resistor R5. Resistor R5 is connected to pin 7 of isolated gate driver U5 and grounded through diode D22 and capacitor C23. The anode of the Zener diode D15 is connected to the anode of the diode D21, and the cathode of the diode D21 is connected to the G1 signal output point. The G1 signal output point is also connected to pins 3 and 4 of the isolated gate driver U5 through driving resistors. The G1 signal output point is also connected to the power supply VCC_ISO1 through diode D23, and grounded through a parallel bidirectional diode D24, resistor R6, and capacitor C24.

[0026] like Figure 7 As shown, during processing, each component is first mounted on the PCB board surface according to its corresponding position. The transformer and PIN pins are soldered to the PCB board surface. Then, the matching driver base plate and driver core are soldered together using PIN pins.

Claims

1. A modular IGBT driver circuit board, characterized in that... The system includes a high-speed signal processing circuit, an isolation circuit, a driving circuit, and a baseboard circuit. The high-speed signal processing circuit, the isolation circuit, and the baseboard circuit are connected to the driving circuit. The high-speed signal processing circuit, the isolation circuit, and the driving circuit are integrated on a driving board (1). A PIN output bar (3) is installed on the lower end face of the driving board (1). The baseboard circuit is integrated on a baseboard (6). A plug bar corresponding to the PIN output bar (3) is installed on the baseboard (6).

2. The modular IGBT driver circuit board according to claim 1, characterized in that: The high-speed signal processing circuit includes a pulse width modulation chip. Pin 1 of the pulse width modulation chip is connected to resistor R27. The other end of resistor R27 is connected to pin 9 of the pulse width modulation chip and capacitor C13, which is grounded. Pin 2 is the input reference voltage REF. Pins 3, 4, 5, 6, and 8 are grounded through resistors R19, R20, C11, R22, and C12, respectively. Pin 7 is connected to pin 6 through resistor R24. Pin 16 outputs the reference voltage REF through resistor R21. Pin 15 is connected to the power supply VCC. Pins 14 and 11 are connected to the isolation circuit. Pin 12 is grounded. Pin 10 is grounded through resistor R26. Pins 13 and 16 are grounded through capacitor C22.

3. The modular IGBT driver circuit board according to claim 1, characterized in that: The isolation circuit includes an operational amplifier U8. Pins 2 and 4 of operational amplifier U8 are connected to pins 14 and 11 of the pulse width modulation chip, respectively. Pin 3 is grounded, pin 6 is connected to the power supply VCC_15V, and pins 7 and 8 are connected to resistors R29 and R31, respectively. Resistor R29 is connected to the gate of MOSFET Q1 and grounded through resistor R32. The drain of MOSFET Q1 is connected to pin 1 of the toroidal transformer T, and its source is grounded. Resistor R31 is connected to the gate of MOSFET Q2 and grounded through resistor R33. The source of the MOSFET is grounded, and its drain is connected to pin 4 of the toroidal transformer T. Pins 2 and 3 of the toroidal transformer T are connected to the VDC power supply, and pins 8 and 7, and pins 6 and 5 are connected to one side of the first rectifier bridge and the second rectifier bridge, respectively. The other side of the first rectifier bridge is connected to the cathode of diode D5 and one end of resistor R28. The other end of resistor R28 is connected to the anode of diode D5, the base of transistor Q3, and one end of capacitor C20. The cathode of diode D5, the other end of capacitor C20, and capacitor C14 are connected to power supply VCC_ISO1. Resistor R28, collector of transistor Q3, and capacitor C15 are connected to power supply VEE_ISO1. The emitter of transistor Q3, capacitor C14, and capacitor C15 are connected to ground node GND_ISO1. The other side of the second rectifier bridge is connected to the cathode of diode D10 and one end of resistor R30. The other end of resistor R30 is connected to the anode of diode D10, the base of transistor Q4, and one end of capacitor C21. The cathode of diode D10, the other end of capacitor C21, and capacitor C16 are connected to power supply VCC_ISO2. Resistor R30, collector of transistor Q4, and capacitor C17 are connected to power supply VEE_ISO2. The emitter of transistor Q4, capacitor C16, and capacitor C17 are connected to ground node GND_ISO2.

4. The modular IGBT driver circuit board according to claim 1, characterized in that: The driving circuit includes an isolated gate driver U5. Pins 1, 5, 6, and 8 of the isolated gate driver U5 are connected to power supply VEE_ISO1, power supply VCC_ISO1, ground node GND_ISO1, and power supply VEE_ISO1, respectively. Pins 2, 3, 4, and 7 are connected to the baseboard circuit. Pins 9, 10, and 12 are grounded. Pin 11 is connected to power supply VCC_15V. Pin 13 is connected to the fault handling signal UVLOL. Pin 14 outputs the fault signal FAULTL. Pins 13 and 14 are connected to power supply VCC through resistors and grounded through resistors. Pin 15 is connected to the drive signal DRVL through resistor R17 and grounded through resistor R15.

5. The modular IGBT driver circuit board according to claim 1, characterized in that: The baseboard circuit includes Zener diodes D15, D16, D17, and D18 connected in forward direction in sequence. The cathode of Zener diode D18 is connected to the cathode of Zener diode D20 and connected to the signal output point C1. The anode of Zener diode D20 is connected to the cathode of Zener diode D19. The anode of Zener diode D19 is connected to resistor R5. Resistor R5 is connected to pin 7 of isolated gate driver U5 and grounded through diode D22 and capacitor C23. The anode of the Zener diode D15 is connected to the anode of the diode D21, and the cathode of the diode D21 is connected to the G1 signal output point. The G1 signal output point is also connected to pins 3 and 4 of the isolated gate driver U5 through driving resistors. The G1 signal output point is also connected to the power supply VCC_ISO1 through diode D23, and grounded through a parallel bidirectional diode D24, resistor R6, and capacitor C24.

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