Layout optical proximity correction method, device and equipment and storage medium

Abstract

The invention discloses a layout optical proximity correction method, device and equipment and a storage medium, and is applied to the technical field of chip preparation, and the method comprises the steps: determining a first to-be-corrected graph with insufficient edge placement error amount in a through hole graph after optical proximity effect correction based on a mask rule; moving the to-be-adjusted edge with insufficient edge placement error amount in the first to-be-corrected graph to a direction far away from the center of the first to-be-corrected graph by a target distance according to mask rule checking; the target distance is a distance enabling the second to-be-corrected pattern to meet the edge placement error amount after photoetching simulation; and removing the target rectangle from the corner, opposite to the other through hole pattern, in the second to-be-corrected pattern to obtain a corrected pattern. According to the method, for the through hole pattern with insufficient edge placement error amount due to mask rule inspection, the edge placement error amount is met by moving the to-be-adjusted edge, and then the mask rule inspection is met by digging out the target rectangle to form the unfilled corner, so that the correction of the through hole pattern is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the chip preparation technical field, in particular to a layout optical proximity correction method, a layout optical proximity correction device, a layout optical proximity correction equipment and a computer readable storage medium. BACKGROUND

[0002] With the rapid development of semiconductor manufacturing technology, the higher the integration, the smaller the critical dimension (CD) of semiconductor devices, and the pattern size is constantly approaching the limit of the lithography machine. At present, the lithography wavelength (193nm) of DUV is much larger than the critical dimension. Therefore, optical proximity effect correction (OPC) has become a key step in mask pattern processing. In the advanced node pattern OPC processing process, the four edges of the via pattern (Square Via) are not evenly cut off, and the four edges are moved integrally on one side following the change of the model simulation result to achieve the correction effect.

[0003] Due to the existence of MRC (Mask Rule check, mask rule check), a minimum distance (mask plate minimum resolution size) is set between the edges and the corners of the via pattern. Based on the conventional method of OPC correction, for adjacent closer design patterns, MRC will limit the range of movement of the four edges, and the adjacent via layer processing will still have weak points (weak points), such as insufficient EPE (edge placement error, edge placement error) accuracy of the via layer, which cannot achieve the OPC correction effect.

[0004] Therefore, how to provide a scheme for optical proximity correction of via patterns is a problem that those skilled in the art urgently need to solve. SUMMARY

[0005] The purpose of the present application is to provide a layout optical proximity correction method which can correct via patterns; another purpose of the present application is to provide a layout optical proximity correction device, a layout optical proximity correction equipment and a computer readable storage medium which can correct via patterns.

[0006] To solve the above technical problems, the present application provides a layout optical proximity correction method, comprising:

[0007] Determine the first to be corrected pattern based on the mask rule check in the via pattern after optical proximity effect correction, which has insufficient edge placement error; the first to be corrected pattern is the corner-to-corner via pattern;

[0008] moving a target distance away from a direction of a center of the first to-be-corrected pattern to the to-be-adjusted edge based on a mask rule check to expand the first to-be-corrected pattern to obtain a second to-be-corrected pattern; the target distance is a distance to make the second to-be-corrected pattern satisfy an edge placement error amount after photolithography simulation;

[0009] removing a target rectangle from a corner opposite to another via pattern in the second to-be-corrected pattern to obtain a corrected pattern; the target rectangle is a rectangle to make the corrected pattern satisfy a mask rule check with the other via pattern opposite to the corner.

[0010] Optionally, the removing a target rectangle from a corner opposite to another via pattern in the second to-be-corrected pattern to obtain a corrected pattern comprises:

[0011] drawing a circle in the second to-be-corrected pattern with a vertex opposite to the to-be-corrected edge in the other via pattern opposite to the corner as a center and a minimum resolution size of a mask plate as a radius to determine two cut points;

[0012] determining a target rectangle with the two cut points as vertices of opposite diagonal lines of the rectangle and removing the target rectangle from the second to-be-corrected pattern to obtain a corrected pattern.

[0013] Optionally, after obtaining the corrected pattern, the method further comprises:

[0014] fine-tuning the to-be-corrected edge of the corrected pattern to make an edge placement error amount of the corrected pattern within a preset range.

[0015] Optionally, the determining a first to-be-corrected pattern with an insufficient edge placement error amount based on a mask rule check in a via pattern after optical proximity correction comprises:

[0016] performing optical proximity correction on a target layout to screen out a via pattern with an insufficient edge placement error amount from the corrected target layout;

[0017] screening out a first to-be-corrected pattern with an insufficient edge placement error amount based on a mask rule check from the via pattern; the first to-be-corrected pattern is a corner-opposite via pattern.

[0018] Optionally, the performing optical proximity correction on a target layout to screen out a via pattern with an insufficient edge placement error amount from the corrected target layout comprises:

[0019] performing optical proximity correction on a target layout;

[0020] Filtering each search area in the corrected target layout in sequence along a preset direction, and screening a via pattern with insufficient edge placement error amount.

[0021] Optionally, moving the edge to be adjusted in the first to-be-corrected pattern away from the center of the first to-be-corrected pattern by a target distance in a direction away from the center of the first to-be-corrected pattern based on the mask rule check that there is an insufficient edge placement error amount includes:

[0022] Moving the edge to be adjusted away from the center of the first to-be-corrected pattern by a preset distance;

[0023] After moving the preset distance, performing photolithography simulation on the adjusted first to-be-corrected pattern to determine a current edge placement error amount;

[0024] When the current edge placement error amount is not within a preset range, cyclically performing the steps of moving the edge to be adjusted away from the center of the first to-be-corrected pattern by a preset distance and determining a current edge placement error amount until the current edge placement error amount is within the preset range, and obtaining a second to-be-corrected pattern.

[0025] Optionally, moving the edge to be adjusted in the first to-be-corrected pattern away from the center of the first to-be-corrected pattern by a target distance in a direction away from the center of the first to-be-corrected pattern based on the mask rule check that there is an insufficient edge placement error amount includes:

[0026] Determining an edge placement error amount difference of the edge to be adjusted;

[0027] Determining a corresponding target distance according to the edge placement error amount difference;

[0028] Moving the adjusted edge away from the center of the first to-be-corrected pattern by the target distance.

[0029] The application also provides a layout optical proximity correction device, comprising:

[0030] A first to-be-corrected pattern module is configured to determine a first to-be-corrected pattern with insufficient edge placement error amount based on a mask rule check in a via pattern after optical proximity effect correction; the first to-be-corrected pattern is a corner-to-corner via pattern;

[0031] A second to-be-corrected pattern module is configured to move an edge to be adjusted in the first to-be-corrected pattern away from the center of the first to-be-corrected pattern by a target distance based on the mask rule check that there is an insufficient edge placement error amount, so as to expand the first to-be-corrected pattern to obtain a second to-be-corrected pattern; the target distance is a distance that makes the second to-be-corrected pattern satisfy an edge placement error amount after photolithography simulation;

[0032] The modified pattern module is used to remove a target rectangle from a corner of another via pattern diagonally opposite to the corner of the second to-be-modified pattern, to obtain a modified pattern; the target rectangle is a rectangle that makes the modified pattern and another via pattern diagonally opposite to the corner satisfy a mask rule check.

[0033] The application further provides a layout optical proximity correction device, which comprises:

[0034] a memory for storing the computer program;

[0035] a processor for implementing the steps of the layout optical proximity correction method according to any one of the above when the computer program is executed.

[0036] The application further provides a computer readable storage medium, wherein the computer readable storage medium stores a computer program, and the computer program is executed by a processor to implement the steps of the layout optical proximity correction method according to any one of the above.

[0037] The application provides a layout optical proximity correction method, which comprises the following steps: determining a first to-be-modified pattern in a via pattern that is modified by an optical proximity effect and has an insufficient edge placement error amount based on a mask rule check; the first to-be-modified pattern is a corner-diagonally opposite via pattern; moving a to-be-adjusted edge in the first to-be-modified pattern by a target distance in a direction away from the center of the first to-be-modified pattern to expand the first to-be-modified pattern, to obtain a second to-be-modified pattern; the target distance is a distance that makes the second to-be-modified pattern satisfy an edge placement error amount after lithography simulation; removing a target rectangle from a corner of another via pattern diagonally opposite to the corner of the second to-be-modified pattern, to obtain a modified pattern; the target rectangle is a rectangle that makes the modified pattern and another via pattern diagonally opposite to the corner satisfy a mask rule check.

[0038] The method for modifying the via pattern by moving the to-be-adjusted edge to satisfy the edge placement error amount and then removing the target rectangle to form a corner defect to satisfy the mask rule check is used to modify the via pattern that has an insufficient edge placement error amount based on the mask rule check.

[0039] The application further provides a layout optical proximity correction device, a layout optical proximity correction equipment and a computer readable storage medium, which also have the beneficial effects described above, and thus will not be described here again. BRIEF DESCRIPTION OF DRAWINGS

[0040] In order to make the technical solutions of the embodiments of the present application or the prior art clearer, the accompanying drawings needed in the embodiments or prior art description will be briefly introduced. Obviously, the accompanying drawings in the following description only show some embodiments of the present application, and for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 A schematic diagram of optical proximity correction in the prior art;

[0042] Figure 2 A flow chart of a layout optical proximity correction method provided by the embodiment of the present application;

[0043] Figure 3 A schematic diagram of edge placement error amount after optical proximity correction;

[0044] Figures 4 to 6 A flow chart of a specific layout optical proximity correction method provided by the embodiment of the present application;

[0045] Figure 7 A structure block diagram of a layout optical proximity correction device provided by the embodiment of the present application;

[0046] Figure 8 A structure block diagram of a layout optical proximity correction device provided by the embodiment of the present application. DETAILED DESCRIPTION

[0047] The core of the present application is to provide a layout optical proximity correction method. Please refer to Figure 1 , Figure 1 A schematic diagram of optical proximity correction in the prior art. In the prior art, since MRC exists, as shown in Figure 1 , a minimum distance, i.e. mask minimum resolution size, is set between the edges and the corners of the via pattern, and based on the optical proximity correction of the conventional method, for the adjacent closer design pattern, MRC will limit the range of movement of the four edges, and for the adjacent via layer processing, there will still be weak points, such as insufficient EPE precision of the via layer, which cannot achieve the OPC correction effect.

[0048] The layout optical proximity correction method provided by the application comprises the following steps: determining a first to-be-corrected pattern in a via pattern after optical proximity effect correction, which has an insufficient edge placement error amount based on mask rule checking; the first to-be-corrected pattern is an angle-to-angle via pattern; moving a to-be-adjusted edge in the first to-be-corrected pattern, which has an insufficient edge placement error amount based on mask rule checking, by a target distance away from the direction of the center of the first to-be-corrected pattern, so as to expand the first to-be-corrected pattern to obtain a second to-be-corrected pattern; the target distance is a distance that makes the second to-be-corrected pattern satisfy the edge placement error amount after photolithography simulation; removing a target rectangle from the corner of the second to-be-corrected pattern opposite to the other via pattern to obtain a corrected pattern; and the target rectangle is a rectangle that makes the corrected pattern satisfy the mask rule checking of the other via pattern opposite to the angle-to-angle.

[0049] The method of moving the to-be-adjusted edge to satisfy the edge placement error amount, and then removing the target rectangle to form a corner defect to satisfy the mask rule checking, is used to correct the via pattern.

[0050] In order for those skilled in the art to better understand the present application, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0051] Embodiment one

[0052] Please refer to Figure 2 and Figure 3 , Figure 2 the flowchart of the layout optical proximity correction method provided by the embodiments of the present application; Figure 3 the schematic diagram of the edge placement error amount after optical proximity correction.

[0053] See Figure 1 In the embodiments of the present application, the layout optical proximity correction method comprises the following steps:

[0054] S101: determining a first to-be-corrected pattern in a via pattern after optical proximity effect correction, which has an insufficient edge placement error amount based on mask rule checking.

[0055] In the embodiments of the present application, the first to-be-corrected pattern is an angle-to-angle via pattern.

[0056] In this step, the optical proximity effect correction of the to-be-corrected layout is first needed to be automatically performed by software, and the layout needs to have a via pattern, such as Figure 3The through-hole pattern before correction is usually a circle, while the through-hole pattern after correction is usually a rectangle.

[0057] In optical proximity correction, the target layout is corrected based on mask rule checking (MRC). MRC sets a minimum resolution mask size, typically the minimum spacing between adjacent patterns. When adjacent via patterns are close together, MRC restricts pattern expansion, potentially leading to insufficient edge placement error. In this step, patterns with insufficient edge placement error based on MRC are selected as the first pattern to be corrected, and subsequent steps use this first pattern for correction.

[0058] S102: Move the edge to be adjusted in the first image to be corrected, which has insufficient edge placement error according to the mask rule, away from the center of the first image to be corrected by a target distance, so as to expand the first image to be corrected and obtain the second image to be corrected.

[0059] In this embodiment of the invention, the target distance is the distance that makes the second pattern to be corrected meet the edge placement error amount after photolithography simulation.

[0060] In this step, when adjusting the first pattern to be corrected, the focus is on adjusting the edges in the first pattern where the edge placement error is insufficient, i.e., the edges to be adjusted. Typically, for two through-hole patterns that are diagonally opposite each other, one through-hole pattern has two edges facing the other through-hole pattern. These two edges are the two edges that may have insufficient edge placement error. That is, the edges to be adjusted are usually one or both of these two edges.

[0061] In this step, the edge to be adjusted that has insufficient edge placement error is moved away from the center of the first pattern to be corrected, in order to enlarge the first pattern to be corrected. The distance that the edge to be adjusted is moved is the target distance, which will make the adjusted second pattern to be corrected meet the edge placement error requirement. That is, the target distance is the distance that makes the second pattern to be corrected meet the edge placement error requirement after photolithography simulation.

[0062] In this embodiment, since the target distance is the distance that makes the second pattern to be corrected meet the edge placement error after photolithographic simulation, after moving the edge to be adjusted by the target distance, photolithographic simulation needs to be performed on the adjusted first pattern to be corrected. This photolithographic simulation process is not limited by mask rule checks, so it is possible to detect whether the distance the edge to be adjusted is moved meets the edge placement error even if the mask rule checks are violated. The specific details of this step will be described in detail in the following embodiments of the invention, and will not be repeated here. In this step, the second pattern to be corrected meets the edge placement error but does not meet the mask rule checks.

[0063] S103: Remove the target rectangle from the corner opposite to another through-hole pattern in the second pattern to be corrected to obtain the corrected pattern.

[0064] In this embodiment, the target rectangle is a rectangle that ensures the corrected pattern and another via pattern diagonally opposite each other meet the mask rule check. The target rectangle is located at opposite corners of the two diagonally opposite via patterns. In this step, the target rectangle is removed from the corner of the second pattern to be corrected relative to the other via pattern. The size of this target rectangle needs to be no less than the minimum analytical size of the mask template in the mask rule check, so that the corrected pattern obtained after removing the target rectangle can meet the mask rule check. This results in a corrected pattern that satisfies both the mask rule check and the edge placement error, completing the optical proximity correction of the target layout.

[0065] The present invention provides a layout optical proximity correction method, which corrects through-hole patterns that have insufficient edge placement error due to mask rule checks by moving the edge to be adjusted to meet the edge placement error, and then cutting out a target rectangle to form a missing corner to meet the mask rule checks.

[0066] The specific details of the layout optical proximity correction method provided by this invention will be described in detail in the following embodiments.

[0067] Example 2

[0068] Please refer to Figures 4 to 6 , Figures 4 to 6 This is a schematic flowchart illustrating a specific layout optical proximity correction method provided in an embodiment of the present invention.

[0069] See Figure 4 In this embodiment of the invention, the layout optical proximity correction method includes:

[0070] S201: Perform optical proximity correction on the target layout and select via patterns with insufficient edge placement error from the corrected target layout.

[0071] In this step, optical proximity correction, also known as lithography simulation, is first performed on the entire target layout. From the simulated target layout, via patterns with insufficient edge placement error are first screened out. Specifically, this step typically includes: performing optical proximity correction on the target layout; and filtering each search area in the corrected target layout sequentially along a preset direction to screen out via patterns with insufficient edge placement error. That is, when screening via patterns with insufficient edge placement error, the target layout is pre-divided into multiple search areas, and then each search area is filtered sequentially along a preset direction to screen out via patterns with insufficient edge placement error.

[0072] S202: Select the first pattern to be corrected from the through-hole patterns based on the mask rule check for insufficient edge placement error.

[0073] In this embodiment, the first pattern to be corrected is a through-hole pattern with corners facing each other. Specifically, this step, based on S201, further selects through-hole patterns with insufficient edge placement error, specifically those with insufficient edge placement error due to mask rule checks, as the first pattern to be corrected.

[0074] S203: Move the edge to be adjusted in the first image to be corrected, which has insufficient edge placement error according to the mask rule, away from the center of the first image to be corrected by a target distance, so as to expand the first image to be corrected and obtain the second image to be corrected.

[0075] See Figure 5 This embodiment provides two methods for moving the edge to be adjusted. The first method specifically includes: moving the edge to be adjusted a preset distance away from the center of the first pattern to be corrected; after moving the preset distance, performing photolithographic simulation on the adjusted first pattern to be corrected to determine the current edge placement error; when the current edge placement error is not within a preset range, repeatedly executing the step of moving the edge to be adjusted a preset distance away from the center of the first pattern to be corrected until the current edge placement error is within a preset range, thus obtaining the second pattern to be corrected.

[0076] In this step, a preset distance of one unit is first set. Each time the edge to be adjusted is moved, it only moves outward by one preset distance. After each movement of the edge to be adjusted and after adjusting the first shape to be corrected, a photolithographic simulation is performed on the adjusted first shape to determine the current edge placement error. The loop terminates when the current edge placement error is within the preset range, that is, when the current edge placement error meets the allowable range of edge placement error, and the current shape is determined as the second shape to be corrected.

[0077] The second method specifically includes: determining the edge placement error difference of the edge to be adjusted; determining the corresponding target distance based on the edge placement error difference; and moving the edge to be adjusted away from the center of the first graphic to be corrected by the target distance.

[0078] In other words, this step requires establishing a pre-defined correspondence between the edge placement error difference and the target distance. Typically, this is done by pre-determining the difference between the current edge placement error and the required edge placement error, directly determining the target distance based on this correspondence, and then moving the edge to be adjusted according to this determined target distance to obtain the second shape to be corrected.

[0079] Of course, in this embodiment, the edge to be adjusted can also be moved in other ways, and the specific details are not limited here.

[0080] S204: In another through-hole pattern that is diagonally opposite each other, take the vertex opposite the edge to be corrected as the center of the circle, and draw a circle with the minimum analytical size of the mask as the radius to determine two tangent points in the second pattern to be corrected.

[0081] S205: Determine the target rectangle by using the two tangent points as the vertices at both ends of the diagonal of the rectangle, and remove the target rectangle from the second graphic to be corrected to obtain the corrected graphic.

[0082] See Figure 6 In this embodiment, the process of determining the target rectangle involves drawing a circle with the vertex of the corner opposite the edge to be corrected in the second pattern to be corrected, using the vertex as the center and the minimum analytical size of the mask as the radius. Since the mask rule check is not satisfied at this point, the circle and the second pattern to be corrected will have two tangent points. Based on this, this application uses these two tangent points as the vertices at both ends of the diagonal of the target rectangle to determine its size and shape. This is equivalent to using the two tangent points and the vertex of the second pattern to be corrected located within the circle as the vertices of the target rectangle to determine its size and shape. Then, the target rectangle is removed from the second pattern to be corrected, so that the corrected pattern data can satisfy the mask rule check.

[0083] S206: Fine-tune the edge to be corrected in the corrected graphic so that the edge placement error of the corrected graphic is within the preset range.

[0084] Due to the change in the graphic environment, this step further fine-tunes the position of the edge to be corrected in the corrected graphic. The adjustment direction remains the same: fine-tuning the position of the edge to be corrected along the direction away from or towards the center of the corrected graphic. Since the range of movement distance for this fine-tuning is very small, it will not affect the mask rule check. This fine-tuning process determines that optical proximity correction is complete when the edge placement error of the corrected graphic is within a preset range. Usually, the fine-tuned graphic is output at the end.

[0085] The optical proximity correction method for a layout provided in this embodiment significantly improves the process window for weak patterns, ensures that the via size meets design requirements, and that the minimum distance between the corrected patterns does not violate the mask manufacturability rules.

[0086] Example 3

[0087] In this embodiment, the minimum analytical size of the mask between the two vias is set to 12nm. Traditional methods prevent the edge to be corrected from moving outwards. After photolithography simulation, the edge placement error (EPE) of this edge is -1.6nm, which does not meet the -1.5nm specification (spec) requirement. This embodiment uses the above method to first select the target via pattern and then determine the target edge as the edge to be adjusted. Moving the edge outwards by 1nm violates the mask rule check (MRC), resulting in a corner-to-corner distance of 11.5nm. Through calculation, using the vertices of adjacent vias as the origin and the minimum analytical size of the mask (12nm) as the radius, two tangent points in the target pattern are determined, effectively removing a small rectangular pattern with a width of 0.6nm and a height of 1nm. Photolithography simulation shows that the EPE is now -1.3nm, within the allowable error range, achieving the desired technical effect.

[0088] Example 4

[0089] The following describes a layout optical proximity correction device provided by an embodiment of the present invention. The layout optical proximity correction device described below can be referred to in correspondence with the layout optical proximity correction method described above.

[0090] Figure 7 This is a structural block diagram of a layout optical proximity correction device provided in an embodiment of the present invention, with reference to... Figure 7 Layout optical proximity correction devices may include:

[0091] The first pattern to be corrected module 100 is used to determine the first pattern to be corrected in the through-hole pattern after optical proximity effect correction, which has insufficient edge placement error based on mask rules; the first pattern to be corrected is a through-hole pattern with corners to corners;

[0092] The second pattern module 200 is used to move the edge to be adjusted in the first pattern to be corrected, which has insufficient edge placement error based on mask rules, away from the center of the first pattern to be corrected by a target distance, so as to expand the first pattern to be corrected to obtain the second pattern to be corrected; the target distance is the distance that makes the second pattern to be corrected meet the edge placement error after photolithography simulation.

[0093] The corrected graphic module 300 is used to remove a target rectangle from the corner of the second graphic to be corrected that is diagonally opposite to another through-hole graphic, so as to obtain the corrected graphic; the target rectangle is a rectangle that makes the corrected graphic and the other through-hole graphic diagonally opposite to each other satisfy the mask rule check.

[0094] Preferably, in this embodiment of the invention, the modified graphics module 300 includes:

[0095] The tangent unit is used to determine two tangent points in the second pattern to be corrected by drawing a circle with the vertex opposite the edge to be corrected as the center and the minimum analytical size of the mask as the radius, in another through-hole pattern that is diagonally opposite to each other.

[0096] The removal unit is used to form a target rectangle with the tangent point and the vertex in the circle of the second graphic to be corrected, and to remove the target rectangle from the second graphic to be corrected to obtain the corrected graphic.

[0097] Preferably, in this embodiment of the invention, it further includes:

[0098] The fine-tuning module is used to fine-tune the edge to be corrected in the corrected graphic so that the edge placement error of the corrected graphic is within a preset range.

[0099] Preferably, in this embodiment of the invention, the first graphic module to be corrected 100 includes:

[0100] The first screening unit is used to perform optical proximity effect correction on the target layout and to screen out through-hole patterns with insufficient edge placement error from the corrected target layout.

[0101] The second screening unit is used to screen out a first pattern to be corrected from the through-hole pattern, based on the mask rule check, where the edge placement error is insufficient; the first pattern to be corrected is a through-hole pattern with corners facing each other.

[0102] Preferably, in this embodiment of the invention, the first screening unit includes:

[0103] The correction sub-unit is used to correct the optical proximity effect of the target pattern;

[0104] The first filtering subunit is used to filter each search area in the corrected target layout along a preset direction to filter out through-hole patterns with insufficient edge placement error.

[0105] Preferably, in this embodiment of the invention, the second graphics module to be corrected 200 includes:

[0106] A preset distance moving unit is used to move the edge to be adjusted a preset distance away from the center of the first graphic to be corrected;

[0107] The photolithography simulation unit is used to perform photolithography simulation on the adjusted first pattern to be corrected after moving a preset distance, and to determine the current edge placement error.

[0108] The loop unit is used to repeatedly execute the preset distance movement unit to the photolithography simulation unit when the current edge placement error is not within the preset range, until the current edge placement error is within the preset range, and a second pattern to be corrected is obtained.

[0109] Preferably, in this embodiment of the invention, the second graphics module to be corrected 200 includes:

[0110] The difference unit is used to determine the difference in edge placement error of the edge to be adjusted;

[0111] The target distance unit is used to determine the corresponding target distance based on the difference in edge placement error.

[0112] The moving unit is used to move the adjustment edge a target distance away from the center of the first graphic to be corrected.

[0113] The layout optical proximity correction device of this embodiment is used to implement the aforementioned layout optical proximity correction method. Therefore, the specific implementation of the layout optical proximity correction device can be found in the embodiment section of the layout optical proximity correction method above. For example, the first graphic module to be corrected 100, the second graphic module to be corrected 200, and the corrected graphic module 300 are used to implement steps S101 to S103 in the above-mentioned layout optical proximity correction method. Therefore, the specific implementation can be referred to the description of the corresponding embodiments, which will not be repeated here.

[0114] Example 5

[0115] The following describes a layout optical proximity correction device provided by an embodiment of the present invention. The layout optical proximity correction device described below can be referred to in correspondence with the layout optical proximity correction method and layout optical proximity correction apparatus described above.

[0116] Please refer to Figure 8 , Figure 8 This is a structural block diagram of a layout optical proximity correction device provided in an embodiment of the present invention.

[0117] Reference Figure 8 The optical proximity correction device for this layout may include a processor 11 and a memory 12.

[0118] The memory 12 is used to store computer programs; the processor 11 is used to execute the computer programs to implement the specific content of the layout optical proximity correction method described in the above embodiments of the invention.

[0119] In this embodiment of the layout optical proximity correction device, the processor 11 is used to install the layout optical proximity correction device described in the above-described embodiments. Simultaneously, the processor 11, combined with the memory 12, can implement the layout optical proximity correction method described in any of the above-described embodiments. Therefore, the specific implementation of the layout optical proximity correction device can be found in the embodiments section of the layout optical proximity correction method above. The specific implementation can be referred to the descriptions of the corresponding embodiments, and will not be repeated here.

[0120] Example 6

[0121] The present invention also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements a layout optical proximity correction method described in any of the above embodiments. Further details can be found in the prior art and will not be elaborated upon here.

[0122] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section.

[0123] Those skilled in the art will further recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0124] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein can be implemented directly by hardware, a software module executed by a processor, or a combination of both. The software module can be located in random access memory (RAM), main memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art.

[0125] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0126] The foregoing has provided a detailed description of a layout optical proximity correction method, apparatus, device, and storage medium provided by the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the embodiments above are merely for the purpose of helping to understand the method and core ideas of the present invention. It should be noted that those skilled in the art can make various improvements and modifications to the present invention without departing from its principles, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. A method for optical proximity correction in a layout, characterized in that, include: In the through-hole pattern after optical proximity effect correction, the first pattern to be corrected is identified based on mask rule inspection as having insufficient edge placement error. The first pattern to be corrected is a through-hole pattern with corners facing each other; The edge to be adjusted in the first image to be corrected, which has insufficient edge placement error according to the mask rule check, is moved away from the center of the first image to be corrected by a target distance to expand the first image to be corrected and obtain the second image to be corrected. The target distance is the distance that ensures the second pattern to be corrected meets the edge placement error requirement after photolithography simulation. Remove the target rectangle from the corner of the second pattern to be corrected that is diagonally opposite to another through-hole pattern to obtain the corrected pattern; The target rectangle is a rectangle that makes the modified shape and another through-hole shape that are diagonally opposite each other satisfy the mask rule check.

2. The method according to claim 1, characterized in that, The step of removing the target rectangle from the corner opposite to the other through-hole pattern in the second pattern to be corrected, to obtain the corrected pattern, includes: In another through-hole pattern that is diagonally opposite each other, take the vertex opposite the edge to be corrected as the center of the circle, and draw a circle with the minimum analytical size of the mask as the radius to determine two tangent points in the second pattern to be corrected; The target rectangle is determined by using the two tangent points as the vertices at both ends of the diagonal of the rectangle, and the target rectangle is removed from the second image to be corrected to obtain the corrected image.

3. The method according to claim 2, characterized in that, After obtaining the corrected graphics, the following is also included: The edges to be corrected in the corrected graphic are fine-tuned so that the edge placement error of the corrected graphic is within a preset range.

4. The method according to claim 1, characterized in that, Among the via patterns after optical proximity effect correction, the first pattern to be corrected that has insufficient edge placement error based on mask rule checks includes: Optical proximity effect correction is performed on the target layout, and through-hole patterns with insufficient edge placement error are selected from the corrected target layout. From the through-hole patterns, a first pattern to be corrected is selected based on mask rules to check for insufficient edge placement error; the first pattern to be corrected is a through-hole pattern with corners facing each other.

5. The method according to claim 4, characterized in that, Optical proximity correction is applied to the target layout. From the corrected target layout, via patterns with insufficient edge placement error are selected, including: Optical proximity correction is applied to the target map; The search areas in the corrected target layout are filtered sequentially along the preset direction to select via patterns with insufficient edge placement error.

6. The method according to claim 1, characterized in that, The target distance for moving the edge to be adjusted in the first image to be corrected, which has insufficient edge placement error as determined by mask rules, away from the center of the first image to be corrected, includes: Move the edge to be adjusted a preset distance away from the center of the first graphic to be corrected; After moving a preset distance, photolithographic simulation is performed on the adjusted first pattern to be corrected to determine the current edge placement error. When the current edge placement error is not within a preset range, the step of moving the edge to be adjusted a preset distance away from the center of the first graphic to be corrected is executed repeatedly until the current edge placement error is within a preset range, thus obtaining the second graphic to be corrected.

7. The method according to claim 1, characterized in that, The target distance for moving the edge to be adjusted in the first image to be corrected, which has insufficient edge placement error as determined by mask rules, away from the center of the first image to be corrected, includes: Determine the difference in edge placement error of the edge to be adjusted; The corresponding target distance is determined based on the difference in edge placement error. Move the adjustment edge a target distance away from the center of the first graphic to be corrected.

8. A layout optical proximity correction device, characterized in that, include: The first pattern module is used to identify the first pattern to be corrected in the through-hole pattern after optical proximity effect correction, based on the mask rule check, which has insufficient edge placement error. The first pattern to be corrected is a through-hole pattern with corners facing each other; The second image module is used to move the edge to be adjusted in the first image to be corrected, which has insufficient edge placement error based on the mask rule check, away from the center of the first image to be corrected by a target distance, so as to expand the first image to be corrected to obtain the second image to be corrected. The target distance is the distance that ensures the second pattern to be corrected meets the edge placement error requirement after photolithography simulation. The corrected graphic module is used to remove the target rectangle from the corner of the second graphic to be corrected that is diagonally opposite to another through-hole graphic, so as to obtain the corrected graphic; The target rectangle is a rectangle that makes the modified shape and another through-hole shape that are diagonally opposite each other satisfy the mask rule check.

9. A layout optical proximity correction device, characterized in that, The device includes: Memory: Used to store computer programs; Processor: for executing the computer program to implement the steps of the layout optical proximity correction method as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the steps of the layout optical proximity correction method as described in any one of claims 1 to 7.

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