A magnetic code disc material for humanoid robot actuators and a preparation method and application thereof

Abstract

This invention relates to the field of magnetic code disk materials technology, specifically disclosing a magnetic code disk material for humanoid robot actuators, its preparation method, and its applications. The magnetic code disk material for humanoid robot actuators comprises a substrate, a Bi layer, an AlNiFeCo thin film, an Nb layer, and a Ta layer stacked sequentially. The novel structural design provided by this invention introduces a dual-intercalation cladding structure of Bi and Nb layers, which synergistically act on the AlNiFeCo thin film, meeting the application requirements of high-precision magnetic encoder code disk materials for high coercivity and high remanence. Simultaneously, the element diffusion is a diffuse pinned network distribution, which is beneficial for obtaining uniform and consistent high-quality sine wave signal output performance during code disk writing. The magnetic code disk material prepared by this invention is suitable for the preparation of high-performance, high-uniformity magnetic code disk materials and high-precision, miniaturized magnetic encoder technology, and has excellent application prospects in humanoid robot actuators.

Description

Technical Field

[0001] This invention relates to the field of magnetic encoder material technology, and in particular to a magnetic encoder material for humanoid robot actuators, its preparation method, and its application. Background Technology

[0002] Humanoid robots integrate advanced technologies such as new materials, high-end manufacturing, and artificial intelligence, and are expected to become disruptive products following computers, smartphones, and new energy vehicles, reshaping the global industrial development landscape. Actuators, as precision systems integrating multiple components, are the core power execution units for realizing robot limb movement, force control, and posture adjustment. Encoders are the core feedback units for achieving "precise motion control" (such as angle, rotational speed, and displacement), equivalent to the actuator's eyes and position nerve endings. They are key sensors that measure position, velocity, or angular displacement by detecting changes in the NS magnetic signal of a magnetic code disk, possessing advantages such as high precision, strong anti-interference capabilities, and good durability. Magnetic encoders mainly consist of a magnetic code disk, a magnetoresistive sensor, and a signal processing circuit. The precision of the magnetic code disk directly affects the accuracy of the signal collected by the entire magnetic encoder's magnetic sensitive element, thus determining the upper limit of the magnetic encoder's precision. With the rapid iteration of humanoid robot technology, the precision requirements for the core sensing component of the actuator—the magnetic encoder—continue to rise (higher encoder precision means higher actuator position control precision, allowing joints to accurately reach designated positions according to instructions, which is beneficial for the overall coordination and stability of the robot's movements), and the devices are becoming increasingly integrated and miniaturized. Humanoid robots, with their limited space, require compact magnetic encoders for easy integration into various rotary or linear actuators. Miniaturization reduces the overall size and weight of the robot, improving the safety and comfort of human-robot interaction. Therefore, increasingly stringent requirements are placed on magnetic encoder materials and devices. Currently, magnetic encoder materials include ferrite materials and magnetic alloys, with a growing trend towards alloy thin films (hard magnetic thin film materials) with higher recording densities. AlNiCo thin films, possessing excellent magnetic stability and free of rare and precious metals, are a suitable candidate material for magnetic encoders. Obtaining AlNiCo thin films with suitable coercivity and high remanence, ensuring their uniformity, and miniaturizing the resulting devices are among the key problems urgently needing to be solved in the field of critical components for humanoid robot actuators.

[0003] Therefore, existing technologies still need to be improved and developed. Summary of the Invention

[0004] In view of the shortcomings of the prior art, the purpose of this invention is to provide a magnetic code disk material for humanoid robot actuators, its preparation method and application, aiming to solve the problem that the existing AlNiCo thin film has low coercivity and cannot maintain a high remanence level when used as a magnetic code disk material, which limits its application scenarios.

[0005] The technical solution of the present invention is as follows:

[0006] A magnetic code disk material for a humanoid robot actuator includes a substrate, a Bi layer, an AlNiFeCo thin film, an Nb layer, and a Ta layer stacked sequentially.

[0007] The magnetic code disk material for the humanoid robot actuator has the following characteristics: the Bi layer has a thickness of 8-15 nm, the AlNiFeCo film has a thickness of 50-100 nm, the Nb layer has a thickness of 14-18 nm, and the Ta layer has a thickness of 5-10 nm.

[0008] The magnetic code disk material for the humanoid robot actuator has the following characteristics: the Bi layer has a thickness of 10 nm, the AlNiFeCo film has a thickness of 50 nm, the Nb layer has a thickness of 18 nm, and the Ta layer has a thickness of 8 nm.

[0009] The magnetic code disk material for the humanoid robot actuator, wherein the substrate is one of a glass substrate and a silicon substrate.

[0010] A method for preparing a magnetic encoder disk material for a humanoid robot actuator as described in this invention, comprising the steps of:

[0011] Bi layers were deposited on the substrate surface using magnetron sputtering with Bi as the target material.

[0012] AlNiFeCo thin films were deposited on the surface of the Bi layer using magnetron sputtering with AlNiFeCo as the target material.

[0013] Using Nb as the target material, a Nb layer was deposited on the surface of the AlNiFeCo thin film by magnetron sputtering.

[0014] A Ta layer was deposited on the surface of the Nb layer using magnetron sputtering with Ta as the target material to obtain a composite layer material.

[0015] The composite layer material is subjected to vacuum annealing to obtain the magnetic encoder disk material for the humanoid robot actuator.

[0016] The method for preparing the magnetic encoder disk material for the humanoid robot actuator, wherein in the step of depositing a Bi layer on the substrate surface using Bi as the target material by magnetron sputtering, the sputtering power is 50-100W and the vacuum degree of the sputtering chamber is 1×10⁻⁶. -5 -3×10 - 5 Pa, the working gas is argon, and the argon pressure is 0.2-0.4 Pa.

[0017] The method for preparing the magnetic encoder disk material for the humanoid robot actuator, wherein in the step of depositing an AlNiFeCo thin film on the surface of the Bi layer using magnetron sputtering with AlNiFeCo as the target material, the sputtering power is 50-100W and the vacuum degree of the sputtering chamber is 1×10⁻⁶. -5 -3×10 -5 Pa, working gas is argon, argon pressure is 0.2-0.4 Pa.

[0018] The method for preparing the magnetic encoder disk material for the humanoid robot actuator, wherein the elemental composition of the target material AlNiFeCo by mass percentage includes: 30-35% Fe, 30-40% Co, 10-20% Ni, 5-10% Al, 3-6% Ti and 2-5% Cu.

[0019] The method for preparing the magnetic code disk material for the humanoid robot actuator includes a step of vacuum annealing the composite layer material, wherein the annealing temperature is 740-760℃, the annealing time is 25-35 min, and the annealing vacuum degree is 1×10⁻⁶. -5 -5×10 -5 Pa.

[0020] An application of a magnetic encoder material for a humanoid robot actuator as described in this invention, wherein the magnetic encoder material for a humanoid robot actuator is used to prepare a magnetic encoder.

[0021] Beneficial effects: The magnetic code disk material for humanoid robot actuators provided by this invention includes a substrate, a Bi layer, an AlNiFeCo thin film, an Nb layer, and a Ta layer stacked sequentially. This invention introduces bismuth (Bi), a metal with low surface energy and saturated vapor pressure, and niobium (Nb), a metal with high melting point and low diffusion coefficient, as a double-layer coating material to coat the AlNiFeCo thin film. On the one hand, the diffusion of Bi atoms during high-temperature annealing leads to an increase in the defect density inside the film, enhancing the pinning effect of defects on magnetic domains. At the same time, the diffusion behavior of Bi atoms after annealing not only refines the grains but also promotes the amplitude modulation decomposition of AlNiFeCo, forming a ferromagnetic α1 (Fe-rich Co) phase and a weakly magnetic α2 (Al-Ni-rich) phase. Furthermore, by effectively controlling the diffusion of Nb elements in the AlNiFeCo thin film, a dispersed pinning network with short-range order and long-range disorder is formed within the magnetic layer. This effectively and significantly enhances the coercivity of the AlNiFeCo thin film while mitigating the magnetic dilution effect and maintaining a high level of remanence. The coercivity of the film increases significantly from 381 Oe without intercalation to 576 Oe (an increase of 51%), while the remanence remains at a relatively high level of 6106 Oe. The novel structural design provided by this invention introduces the synergistic effect of double intercalation coating on the AlNiFeCo thin film, meeting the application requirements of high coercivity and high remanence for high-precision magnetic encoder code disk materials. Simultaneously, the element diffusion is a dispersed pinning network distribution, which is beneficial for obtaining uniform and consistent high-quality sine wave signal output performance during code disk writing. This design is suitable for the preparation of high-performance, high-uniformity magnetic code disk materials and high-precision, miniaturized magnetic encoder technology, and has excellent application prospects in humanoid robot actuators. Attached Figure Description

[0022] Figure 1 This is a flowchart illustrating the preparation method of a magnetic encoder disk material for a humanoid robot actuator according to the present invention.

[0023] Figure 2 The XRD patterns are shown for the magnetic code disk material (denoted as a) for the humanoid robot actuator prepared in Example 1 and the magnetic code disk material (denoted as b) in Comparative Example 1. Detailed Implementation

[0024] This invention provides a magnetic encoder disk material for humanoid robot actuators, its preparation method, and its application. To make the objectives, technical solutions, and effects of this invention clearer and more explicit, the invention is further described in detail below. It should be understood that the specific embodiments described herein are only for explaining the invention and are not intended to limit the invention.

[0025] Please see Figure 1 , Figure 1 A flowchart of a method for preparing a magnetic encoder disk material for a humanoid robot actuator provided by the present invention is shown in the figure, which includes the following steps:

[0026] S10. A Bi layer is deposited on the substrate surface using magnetron sputtering with Bi as the target material.

[0027] S20. Using AlNiFeCo as the target material, an AlNiFeCo thin film is deposited on the surface of the Bi layer by magnetron sputtering.

[0028] S30. A Nb layer is deposited on the surface of the AlNiFeCo thin film using magnetron sputtering with Nb as the target material.

[0029] S40. Using Ta as the target material, a Ta layer is deposited on the surface of the Nb layer by magnetron sputtering to obtain a composite layer material;

[0030] S50. The composite layer material is subjected to vacuum annealing to obtain the magnetic code disk material for the humanoid robot actuator.

[0031] This invention employs Bi (bismuth) and Nb (niobium) as bilayer coatings to coat an AlNiFeCo thin film (magnetic layer), constructing a Bi / AlNiFeCo / Nb / Ta multilayer film structure. Its core mechanism revolves around microstructure regulation, magnetic domain behavior optimization, and synergistic enhancement of magnetic properties. Through the unique roles of the Bi and Nb layers in material preparation and annealing processes, significant improvements in coercivity are achieved from dimensions such as defect pinning reinforcement, grain refinement, amplitude modulation decomposition promotion, and the construction of a diffuse pinning network. At the same time, by precisely controlling element diffusion and phase structure evolution, the magnetic dilution effect is weakened, ensuring that remanence is maintained at a high level. Ultimately, this meets the core requirements of humanoid robot actuators for high coercivity, high remanence, and high uniformity of magnetic code disk materials.

[0032] Specifically, metallic bismuth (Bi) possesses two key properties that underpin its role in AlNiFeCo magnetic layer coating: firstly, its low surface energy, approximately 0.15-0.18 J / m². 2 (far lower than the 0.5-0.6 J / m of AlNiFeCo alloy) 2 This low surface energy characteristic makes it more prone to atomic-level diffusion during subsequent annealing, and the diffusion path is more likely to penetrate into the interior of the AlNiFeCo magnetic layer; secondly, it has a low saturated vapor pressure, with Bi's saturated vapor pressure being only 10 at the annealing temperature. -5 -10 -4 Pa is much lower than other low-melting-point metals, which can effectively avoid the failure of the coating layer caused by excessive volatilization of Bi atoms during annealing, ensuring the stability of its diffusion concentration in the AlNiFeCo magnetic layer, and providing a continuous effect for subsequent microstructure regulation.

[0033] Under vacuum annealing conditions, Bi atoms in the Bi layer diffuse along the inherent defect channels such as grain boundaries and dislocations in the AlNiFeCo magnetic layer, driven by their low surface energy. Since the AlNiFeCo alloy has a body-centered cubic (BCC) crystal structure, its atoms are loosely arranged at the grain boundaries, allowing Bi atoms (atomic radius 154 pm) to diffuse into the AlNiFeCo lattice through interstitial diffusion. During diffusion, there is a significant difference in atomic radius between Bi atoms and Fe, Co, and Ni atoms in AlNiFeCo (atomic radii of 124 pm, 125 pm, and 125 pm, respectively). This size mismatch leads to local distortion of the AlNiFeCo lattice, forming a lattice strain field. Simultaneously, the introduction of Bi atoms disrupts the original atomic balance of the AlNiFeCo lattice, promoting the generation of new vacancies, dislocations, and other point and line defects within the crystal, thus increasing the defect density inside the film. The movement of magnetic domain walls is the core factor affecting the coercivity of the material. Coercivity is essentially the magnetic field strength required to resist the movement of magnetic domain walls; the higher the defect density and the stronger the pinning effect on the domain walls, the greater the coercivity. The magnetic domain walls in AlNiFeCo thin films are mainly 180° Bloch walls. Their movement requires overcoming lattice resistance and defect effects. The lattice distortion and new defects introduced by Bi atoms will form local energy barriers inside the material. During the movement of the magnetic domain walls, more energy needs to be consumed to cross the strain energy field around the defects, thus significantly increasing the resistance to the movement of the magnetic domain walls.

[0034] During the conventional annealing process of AlNiFeCo thin films, the low grain boundary migration barrier (approximately 0.3-0.4 eV) easily leads to abnormal grain growth, resulting in uneven grain size distribution (typically fluctuating within the range of 50-500 nm). However, during diffusion, Bi atoms preferentially accumulate at the grain boundaries of the AlNiFeCo thin film. Because the grain boundary segregation energy of Bi is lower than its dissolution energy within the lattice (0.5-0.6 eV), the grain boundaries become stable regions for Bi atoms. The Bi atoms enriched at the grain boundaries form a thin Bi-alloy segregation layer, which significantly increases the grain boundary migration barrier (from 0.3-0.4 eV to 0.8-0.9 eV), hindering further grain boundary movement and thus suppressing abnormal grain growth in the AlNiFeCo thin film during annealing. On the one hand, refined grains can increase the number of grain boundaries. Grain boundaries are natural pinning centers for magnetic domain walls. The more grain boundaries there are, the denser the pinning sites for magnetic domain walls become, further enhancing the resistance to the movement of magnetic domain walls and helping to improve coercivity. On the other hand, a uniform grain size distribution can avoid magnetic property inhomogeneity caused by excessively large local grains. Large grain regions are prone to magnetic domain agglomeration, leading to local saturation or distortion of the magnetic signal. Refined and uniform grains can make the magnetic domains more regularly distributed inside the thin film, laying a structural foundation for the stability of subsequent remanence.

[0035] The magnetic properties of AlNiFeCo alloys are closely related to their phase structure. During annealing, AlNiFeCo undergoes amplitude modulation decomposition, which involves the separation of the supersaturated solid solution into a ferromagnetic α1 phase (rich in Fe-Co, with a saturation magnetization Ms of approximately 1.8-2.0 T) and a weakly magnetic α2 phase (rich in Al-Ni, with a saturation magnetization Ms of approximately 0.1-0.2 T). The amplitude modulation decomposition of traditional AlNiFeCo films presents two problems: first, the decomposition rate is slow; after annealing at 750℃ for 30 minutes, the degree of decomposition is only 60%-70%, leaving a large amount of undecomposed supersaturated solid solution (Ms of approximately 1.0-1.2 T), resulting in low overall magnetic properties; second, the decomposition products are unevenly distributed, with the α1 phase easily agglomerating into large regions and the α2 phase dispersed in island-like formations, failing to form an effective magnetic domain modulation structure. The introduction of Bi atoms can optimize amplitude modulation decomposition from both thermodynamic and kinetic perspectives: From a thermodynamic point of view, the diffusion of Bi atoms will disrupt the chemical equilibrium of AlNiFeCo solid solution, reduce the free energy barrier of amplitude modulation decomposition (from 15-18 kJ / mol to 8-10 kJ / mol), and make decomposition easier to occur; From a kinetic point of view, the defect channels formed by Bi atoms in the lattice provide a fast path for the migration of Fe and Co atoms. The formation of the α1 phase depends on the enrichment of Fe and Co atoms. The vacancies and dislocations introduced by Bi atoms can accelerate the diffusion rate of Fe and Co atoms, thereby accelerating the amplitude modulation decomposition process. The α1 phase is the main contributor to remanence. A continuous and uniform α1 phase network can ensure the transmission efficiency of magnetic moment in the thin film and avoid magnetic moment loss caused by α1 phase agglomeration, thereby maintaining a high level of remanence. The diffuse distribution of the α2 phase can further enhance magnetic domain pinning. Since the α2 phase is a weakly magnetic phase, a magnetic anisotropy gradient will be formed at the interface between it and the α1 phase. When the domain walls cross the α1 / α2 interface, they need to overcome additional energy barriers, which further enhances the resistance to the movement of the domain walls and synergistically improves the coercivity.

[0036] In this invention, metallic niobium (Nb) possesses material properties that are distinctly different from but complementary to Bi, making it an ideal match for the Bi layer: First, it has a high melting point, with Nb reaching 2468℃, far exceeding the annealing temperature of 750℃. This allows it to maintain a stable solid structure during annealing, preventing the coating layer from failing due to melting. Second, it has a low diffusion coefficient; at an annealing temperature of 740-760℃, the diffusion coefficient of Nb in AlNiFeCo is only 10. -15 m 2 / s to 10 -14 m 2The low diffusion characteristic of the Nb layer allows for controllable diffusion within the AlNiFeCo film, preventing excessive penetration that could lead to magnetic dilution, while simultaneously enabling the slow formation of a stable dispersed phase structure. The core function of the Nb layer is to construct a dispersed pinning network characterized by short-range order and long-range disorder. This network synergizes with the defect modulation, grain refinement, and amplitude modulation decomposition of the Bi layer, further enhancing coercivity while precisely controlling the magnetic dilution effect to ensure that remanence does not decrease significantly.

[0037] Under annealing conditions, Nb atoms in the Nb layer diffuse into the AlNiFeCo film. However, due to its low diffusion coefficient, the diffusion depth is limited to the upper and middle regions of the AlNiFeCo film (approximately 20-30 nm deep, corresponding to 40%-60% of the total thickness of the AlNiFeCo film), forming a gradient Nb concentration field. The Nb concentration is relatively high in the AlNiFeCo region close to the Nb layer and relatively low in the region far from the Nb layer.

[0038] When the Nb atom concentration reaches a critical value (approximately 3%-4% atomic fraction), it reacts chemically with Co atoms in AlNiFeCo to precipitate intermetallic compound phases such as Co2Nb. These precipitated phases are non-magnetic, exhibiting a significant difference in magnetic properties compared to the surrounding ferromagnetic α1 phase. This difference generates a strong magnetic anisotropy field at the phase interface. When the domain walls move near the non-magnetic precipitates, the magnetic anisotropy field exerts a "pinning force" on the domain walls, hindering their further movement. This pinning effect is called diffuse pinning, and its strength is closely related to the size, density, and distribution of the precipitates.

[0039] The dispersed pinning network constructed in this invention, characterized by short-range order and long-range disorder, possesses unique advantages: At the short-range scale (10-20 nm), the distribution of precipitated phases exhibits a certain regularity (distributed along grain boundaries or dislocation lines of the α1 phase), forming continuous pinning site chains that effectively hinder local magnetic domain wall movement; at the long-range scale (100-200 nm), the gradient distribution of precipitated phases avoids magnetic domain dead zones (i.e., areas where magnetic moments cannot flip) caused by excessively high local pinning strength, ensuring uniform transmission of magnetic signals within the thin film. Hysteresis loop (VSM) testing analysis reveals that with only a Bi layer, the coercivity of the thin film is 451 Oe; after introducing an 18 nm Nb layer, the coercivity further increases to 576 Oe, and the rectangularity of the hysteresis loop (Mr / Ms) remains at a relatively high level of 0.87, demonstrating that the dispersed pinning network, while improving coercivity, does not significantly disrupt the overall orientation of the magnetic moments.

[0040] In this invention, the Bi layer and Nb layer are located on opposite sides of the AlNiFeCo film (Bi layer below, Nb layer above), forming a "pincer" encapsulation structure. This spatial distribution makes their effective regions complementary: the Bi layer's effect is concentrated in the lower region of the AlNiFeCo film, laying the microstructural foundation for improved magnetic properties through defect control, grain refinement, and amplitude modulation decomposition; the Nb layer's effect is concentrated in the upper-middle region of the AlNiFeCo film, achieving precise enhancement of magnetic properties by constructing a diffuse pinning network. This complementarity avoids the limitations of a single intercalation layer: if only the Bi layer is used, although coercivity can be improved through defect and phase structure optimization, there is a lack of long-term stable diffuse pinning centers, resulting in a low upper limit for coercivity improvement (approximately 450 Oe); if only the Nb layer is used, although a diffuse pinning network can be constructed, the initial defect density and phase structure of the AlNiFeCo film are poor, and the pinning effect cannot be fully utilized, with coercivity only able to be improved to 480-500 Oe. The double-layer coating structure allows the early optimization of the Bi layer and the later strengthening of the Nb layer to work together, ultimately achieving a high level of coercivity exceeding 570 Oe.

[0041] The amplitude modulation decomposition promoted by the Bi layer increases the volume fraction of the α1 phase from 40%-45% to 60%-65%. The continuous network structure of the α1 phase ensures magnetic moment transfer efficiency and provides structural support for remanence. On the other hand, the Nb layer precisely controls the volume fraction and gradient distribution of non-magnetic precipitates, avoiding excessive fracture of ferromagnetic regions. At the same time, the refined grains of the Bi layer make the magnetic domain orientation more consistent, reducing remanence loss caused by magnetic moment disorder. Experimental data of this invention show that when the Nb layer thickness increases from 2nm to 18nm, the optimized α1 phase structure of the Bi layer can buffer the magnetic dilution effect brought by the Nb layer, and the remanence decreases from 8216Oe to 6106Oe, which is much lower than the 40%-50% decrease of traditional intercalation (such as W layer). Moreover, the remanence of 6106Oe still meets the practical requirements of magnetic encoder disks (≥5000Oe), which fully demonstrates the balancing advantage of the double-layer coating structure of this invention in improving coercivity and maintaining remanence.

[0042] In this invention, the Ta layer, as the outermost functional layer of the magnetic code disk material, relies on its high chemical stability, high hardness, low diffusion coefficient, and paramagnetic properties to ensure the stability of the magnetic code disk material performance from multiple dimensions, making it suitable for the working conditions of humanoid robot actuators. Its core functions are as follows: First, environmental protection: Ta reacts with O2 to form a dense Ta2O5 passivation film (porosity <0.1%), which can block the penetration of O2, H2O, and corrosive substances, prevent the formation of non-magnetic oxides of Fe and Co in the AlNiFeCo film, and also prevent the oxidation of the Bi layer; Second, mechanical protection: Ta has a microhardness of 150-200 HV and a friction coefficient of only 0.15-0.2, which can resist scratches and micro-friction during preparation / use, reducing film wear; Third, structural stability: Ta can inhibit the volatilization of Bi layer and Nb (Bi has an extremely low diffusion coefficient in Ta), avoiding its thickness decay; At the same time, it blocks the interdiffusion between layers (such as Nb and AlNiFeCo), maintaining the functional layer composition and gradient distribution, and ensuring the integrity of the pinning network.

[0043] In some embodiments, in the step of depositing a Bi layer on the substrate surface using magnetron sputtering with Bi as the target material, the sputtering power is 50-100W and the vacuum degree of the sputtering chamber is 1×10⁻⁶. -5 -3×10 -5 Pa, the working gas is argon, and the argon pressure is 0.2-0.4 Pa. The thickness of the Bi layer is 8-15 nm. For example, the thickness of the Bi layer can be 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, etc., but is not limited to these.

[0044] In some embodiments, in the step of depositing an AlNiFeCo thin film on the Bi layer surface using magnetron sputtering with AlNiFeCo as the target material, the sputtering power is 50-100W and the vacuum degree of the sputtering chamber is 1×10⁻⁶. -5 -3×10 -5 The working gas is argon, and the argon pressure is 0.2-0.4 Pa. In this embodiment, the elemental composition of the target material AlNiFeCo, by mass percentage, includes: 30-35% Fe, 30-40% Co, 10-20% Ni, 5-10% Al, 3-6% Ti, and 2-5% Cu, resulting in an AlNiFeCo film with a thickness of 50-100 nm. For example, the target material AlNiFeCo, by mass percentage, includes: 35% iron, 34% Co, 15% Ni, 7% Al, 5% Ti, and 4% Cu; the thickness of the AlNiFeCo film can be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc., but is not limited to these. In this embodiment, the thickness of the AlNiFeCo film is controlled by controlling the magnetron sputtering time.

[0045] In some embodiments, in the step of depositing a Nb layer on the surface of the AlNiFeCo thin film using magnetron sputtering with Nb as the target, the sputtering power is 50-100W and the vacuum degree of the sputtering chamber is 1×10⁻⁶. -5 -3×10 -5 Pa, the working gas is argon, and the argon pressure is 0.2-0.4 Pa. The thickness of the Nb layer is 14-18 nm. For example, the thickness of the Nb layer can be 14 nm, 15 nm, 16 nm, 18 nm, etc., but is not limited to these.

[0046] In some embodiments, in the step of depositing a Ta layer on the surface of the Nb layer using magnetron sputtering with Ta as the target to obtain a composite layer material, the sputtering power is 50-100W and the vacuum degree of the sputtering chamber is 1×10⁻⁶. -5 -3×10 -5 Pa, the working gas is argon, and the argon pressure is 0.2-0.4 Pa. The thickness of the Ta layer is 5-10 nm. For example, the thickness of the Nb layer can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, etc., but is not limited to these.

[0047] In some embodiments, the vacuum annealing step of the composite layer material involves an annealing temperature of 740-760°C, an annealing time of 25-35 min, and an annealing vacuum degree of 1×10⁻⁶. -5 -5×10 -5 Pa.

[0048] In the preparation of the magnetic code disk material for the humanoid robot actuator in this embodiment, annealing is not a simple post-processing step, but a core step to achieve precise microstructure control, magnetic domain behavior optimization, and breakthroughs in magnetic properties. Essentially, it drives atomic diffusion, phase structure evolution, and defect reconstruction through energy input, providing thermodynamic and kinetic conditions for defect pinning and amplitude modulation decomposition in the Bi layer and the construction of the dispersed pinning network in the Nb layer. Ultimately, this achieves the technical goal of increasing the coercivity (Hc) from 381 Oe to 576 Oe (an increase of 51%) and maintaining a high level of remanence (Mr) at 6106 Oe. Under annealing temperatures of 740-760℃, the diffusion coefficient of Bi increases to 10. -12 -10 -11 m 2 / s, can penetrate along AlNiCo grain boundaries and dislocation channels to form defect-rich regions; the diffusion coefficient of Nb is increased to 10 -15 -10 -14 m 2The annealing time can slowly diffuse to the middle part of the magnetic layer (20-50 nm depth) per second, providing a concentration basis for subsequent dispersed phase precipitation. The core logic of annealing time is: it needs to be long enough to complete atomic diffusion and phase evolution, but short enough to avoid over-reaction and decreased production efficiency. 25-35 min is the balance choice in this embodiment based on reaction kinetic curves and industrial requirements.

[0049] In some embodiments, the magnetic code disk material for humanoid robot actuators prepared based on the method of the present invention comprises a substrate, a Bi layer, an AlNiFeCo thin film, an Nb layer, and a Ta layer stacked sequentially. The novel structural design provided by the present invention introduces a dual-intercalation cladding structure of Bi and Nb layers, which synergistically act on the AlNiFeCo thin film, meeting the application requirements of high-precision magnetic encoder code disk materials for high coercivity and high remanence. Simultaneously, the element diffusion is a diffuse pinned network distribution, which is beneficial for obtaining uniform and consistent high-quality sine wave signal output performance during code disk writing. The magnetic code disk material prepared by the present invention is suitable for the preparation of high-performance, high-uniformity magnetic code disk materials and high-precision, miniaturized magnetic encoder technology, and has excellent application prospects in humanoid robot actuators.

[0050] In some embodiments, the substrate is either a glass substrate or a silicon substrate, but is not limited thereto.

[0051] In some embodiments, an application of the magnetic code disk material for humanoid robot actuators as described in this invention is also provided, wherein the magnetic code disk material for humanoid robot actuators is used to prepare magnetic encoders.

[0052] The present invention will be further explained and illustrated below through specific embodiments:

[0053] Example 1

[0054] A method for preparing a magnetic encoder disk material for a humanoid robot actuator, comprising the following steps:

[0055] Step 1: A Bi layer is deposited on the surface of a glass substrate using magnetron sputtering with Bi as the target material. The sputtering power is 80W and the vacuum degree of the sputtering chamber is 2×10⁻⁶. -5 Pa, the working gas is argon, and the argon pressure is 0.3 Pa; wherein, the thickness of the Bi layer is 10 nm by controlling the sputtering time;

[0056] Step 2: Using AlNiFeCo as the target material, an AlNiFeCo thin film is deposited on the surface of the Bi layer by magnetron sputtering. The sputtering power is 80W and the vacuum degree of the sputtering chamber is 2×10⁻⁶. -5The working gas is argon, and the argon pressure is 0.3 Pa. The elemental composition of the target material AlNiFeCo by mass percentage includes: 35% iron, 34% Co, 15% Ni, 7% Al, 5% Ti and 4% Cu. The thickness of the AlNiFeCo thin film is 50 nm.

[0057] Step 3: Using Nb as the target, a Nb layer is deposited on the surface of the AlNiFeCo thin film by magnetron sputtering. The sputtering power is 80W and the vacuum degree of the sputtering chamber is 2×10⁻⁶. -5 Pa, the working gas is argon, and the argon pressure is 0.3 Pa; wherein, the thickness of the Nb layer is 18 nm by controlling the sputtering time;

[0058] Step 4: Using Ta as the target, a Ta layer is deposited on the surface of the Nb layer by magnetron sputtering to obtain a composite layer material. The sputtering power is 80 W and the vacuum degree of the sputtering chamber is 2 × 10⁻⁶. -5 Pa, the working gas is argon, and the argon pressure is 0.3 Pa; wherein, the thickness of the Ta layer is 8 nm by controlling the sputtering time;

[0059] Step 5: Perform vacuum annealing on the composite layer material, wherein the annealing temperature is 750℃, the annealing time is 30 min, and the annealing vacuum degree is 3×10⁻⁶. -5 Pa was used to prepare the magnetic code disk material for the humanoid robot actuator.

[0060] Example 2

[0061] A method for preparing a magnetic code disk material for a humanoid robot actuator, which differs from Example 1 in that the Nb layer thickness is 14 nm by controlling the sputtering time, and the annealing temperature is 740 °C, the annealing time is 35 min, and the annealing vacuum degree is 5 × 10⁻⁶. -5 Pa; the remaining steps are the same as in Example 1.

[0062] Example 3

[0063] A method for preparing a magnetic code disk material for a humanoid robot actuator, which differs from Example 1 in that the sputtering time is controlled to achieve a Nb layer thickness of 16 nm, and the annealing temperature is 760 °C, the annealing time is 30 min, and the annealing vacuum degree is 1 × 10⁻⁶. -5 Pa; the remaining steps are the same as in Example 1.

[0064] Comparative Example 1 (excluding Bi and Nb layers)

[0065] A method for preparing a magnetic code disk material, comprising the following steps:

[0066] Step 1: An AlNiFeCo thin film is deposited on the surface of a glass substrate using magnetron sputtering with AlNiFeCo as the target material. The sputtering power is 80W and the vacuum degree of the sputtering chamber is 2×10⁻⁶. -5 The working gas is argon, and the argon pressure is 0.3 Pa. The elemental composition of the target material AlNiFeCo by mass percentage includes: 35% iron, 34% Co, 15% Ni, 7% Al, 5% Ti and 4% Cu. The thickness of the AlNiFeCo thin film is 50 nm.

[0067] Step 2: Using Ta as the target, a Ta layer is deposited on the surface of the AlNiFeCo thin film by magnetron sputtering to obtain a composite layer material. The sputtering power is 80 W and the vacuum degree of the sputtering chamber is 2 × 10⁻⁶. -5 Pa, the working gas is argon, and the argon pressure is 0.3 Pa; wherein, the thickness of the Ta layer is 8 nm by controlling the sputtering time;

[0068] Step 3: Perform vacuum annealing on the composite layer material, wherein the annealing temperature is 750℃, the annealing time is 30 min, and the annealing vacuum degree is 3×10⁻⁶. -5 Pa was used to prepare the magnetic code disk material.

[0069] Comparative Example 2 (excluding Nb layer)

[0070] A method for preparing a magnetic code disk material, comprising the following steps:

[0071] Step 1: A Bi layer is deposited on the surface of a glass substrate using magnetron sputtering with Bi as the target material. The sputtering power is 80W and the vacuum degree of the sputtering chamber is 2×10⁻⁶. -5 Pa, the working gas is argon, and the argon pressure is 0.3 Pa; wherein, the thickness of the Bi layer is 10 nm by controlling the sputtering time;

[0072] Step 2: Using AlNiFeCo as the target material, an AlNiFeCo thin film is deposited on the surface of the Bi layer by magnetron sputtering. The sputtering power is 80W and the vacuum degree of the sputtering chamber is 2×10⁻⁶. -5 The working gas is argon, and the argon pressure is 0.3 Pa. The elemental composition of the target material AlNiFeCo by mass percentage includes: 35% iron, 34% Co, 15% Ni, 7% Al, 5% Ti and 4% Cu. The thickness of the AlNiFeCo thin film is 50 nm.

[0073] Step 3: Using Ta as the target, a Ta layer is deposited on the surface of the AlNiFeCo thin film by magnetron sputtering to obtain a composite layer material. The sputtering power is 80 W and the vacuum degree of the sputtering chamber is 2 × 10⁻⁶. -5Pa, the working gas is argon, and the argon pressure is 0.3 Pa; wherein, the thickness of the Ta layer is 8 nm by controlling the sputtering time;

[0074] Step 4: Perform vacuum annealing on the composite layer material, wherein the annealing temperature is 750℃, the annealing time is 30 min, and the annealing vacuum degree is 3×10⁻⁶. -5 Pa was used to prepare the magnetic code disk material.

[0075] Comparative Example 3 (excluding Bi layer)

[0076] A method for preparing a magnetic code disk material, comprising the following steps:

[0077] Step 1: An AlNiFeCo thin film is deposited on the surface of a glass substrate using magnetron sputtering with AlNiFeCo as the target material. The sputtering power is 80W and the vacuum degree of the sputtering chamber is 2×10⁻⁶. -5 The working gas is argon, and the argon pressure is 0.3 Pa. The elemental composition of the target material AlNiFeCo by mass percentage includes: 35% iron, 34% Co, 15% Ni, 7% Al, 5% Ti and 4% Cu. The thickness of the AlNiFeCo thin film is 50 nm.

[0078] Step 2: Using Nb as the target, a Nb layer is deposited on the surface of the AlNiFeCo thin film by magnetron sputtering. The sputtering power is 80W and the vacuum degree of the sputtering chamber is 2×10⁻⁶. -5 Pa, the working gas is argon, and the argon pressure is 0.3 Pa; wherein, the thickness of the Nb layer is 18 nm by controlling the sputtering time;

[0079] Step 3: Using Ta as the target, a Ta layer is deposited on the surface of the Nb layer by magnetron sputtering to obtain a composite layer material. The sputtering power is 80 W and the vacuum degree of the sputtering chamber is 2 × 10⁻⁶. -5 Pa, the working gas is argon, and the argon pressure is 0.3 Pa; wherein, the thickness of the Ta layer is 8 nm by controlling the sputtering time;

[0080] Step 4: Perform vacuum annealing on the composite layer material, wherein the annealing temperature is 750℃, the annealing time is 30 min, and the annealing vacuum degree is 3×10⁻⁶. -5 Pa was used to prepare the magnetic code disk material.

[0081] Comparative Example 4

[0082] A method for preparing a magnetic code disk material, which differs from Example 1 in that the thickness of the Nb layer is 2 nm by controlling the sputtering time; the remaining steps are the same as in Example 1.

[0083] Comparative Example 5

[0084] A method for preparing a magnetic code disk material, which differs from Example 1 in that the thickness of the Nb layer is 8 nm by controlling the sputtering time; the remaining steps are the same as in Example 1.

[0085] Comparative Example 6

[0086] A method for preparing a magnetic code disk material, which differs from Example 1 in that the thickness of the Nb layer is 20 nm by controlling the sputtering time; the remaining steps are the same as in Example 1.

[0087] Figure 2 The XRD patterns of the magnetic code disk material for the humanoid robot actuator prepared in Example 1 (denoted as a) and the magnetic code disk material in Comparative Example 1 (denoted as b) are shown. The horizontal axis represents the diffraction angle, and the vertical axis represents the diffraction intensity (reflecting the presence of the crystalline phase). From left to right, diffraction peaks 1-4 correspond to Co2Nb alloy, Ni3Al, FeCo, and Co2Nb, respectively. Figure 2 As can be seen from the data, peaks 1-4 of the magnetic code disk material (a) in Example 1 are clearly visible, with sharp peak shapes and moderate intensity. The presence of Co2Nb peaks (1 and 4) proves that the Nb layer successfully reacted with Co atoms in AlNiFeCo during the annealing process, precipitating non-magnetic Co2Nb intermetallic compounds. This is the core phase for the Nb layer to construct a diffuse pinning network, providing structural support for improving coercivity. The presence of FeCo (3) and Ni3Al (2) peaks proves that the Bi layer effectively promoted the amplitude modulation decomposition of AlNiFeCo (from supersaturated solid solution to ferromagnetic α1 phase FeCo and weakly magnetic α2 phase Ni3Al). FeCo is the main contributing phase for remanence, while Ni3Al assists in strengthening magnetic domain pinning.

[0088] In Comparative Example 1, the magnetic code disk material (b) lacks the Co2Nb peak. Due to the absence of the Nb layer, a diffuse pinning phase cannot be generated, resulting in the loss of key pinning sites. Furthermore, the FeCo and Ni3Al peak intensities are significantly lower than those in Example 1, and the peak shape is broadened. This is because Comparative Example 1 lacks a Bi layer, leading to insufficient amplitude modulation decomposition (failure to form a continuous FeCo phase network), and the grains are prone to abnormal growth (peak broadening corresponds to uneven grain size), resulting in the absence of the basic structure of magnetic properties.

[0089] The full width at half maximum (FWHM) of the characteristic peak in Example 1 is smaller than that in Comparative Example 1, indicating that the crystal structure of Example 1 is more regular and the grain size is more uniform. This is direct evidence of the effect of the Bi layer in inhibiting grain growth (Bi atoms are enriched at the grain boundaries, hindering grain boundary migration). In contrast, Comparative Example 1, which has no Bi layer, is prone to grain agglomeration and growth, resulting in a decrease in crystallinity. This further explains the difference in coercivity between the two.

[0090] The coercivity and remanence of the magnetic code disk materials prepared in Examples 1-3 and Comparative Examples 1-6 were tested, and the results are shown in Table 1:

[0091] Table 1 Performance Test Results

[0092]

[0093] As can be seen from the test results of Examples 1 to 3 in Table 1, when the thicknesses of the Bi layer and AlNiFeCo film are fixed, the change in the thickness of the Nb layer is the key variable for improving coercivity. When the thickness of the Nb layer changes from 14nm to 16nm to 18nm, the coercivity gradually increases from 510Oe to 532Oe to 576Oe, while the remanence gradually decreases from 6631Oe to 6325Oe to 6106Oe. This indicates that the core function of the Nb layer is to generate the non-magnetic dispersed pinning phase of Co2Nb. The more Nb atoms diffuse into the AlNiFeCo film during annealing, the more abundant and densely distributed the generated Co2Nb phase becomes, resulting in stronger pinning force on the magnetic domain walls and a significant improvement in coercivity. When the Nb layer is too thin (14nm / 16nm), the diffusion of Nb atoms is insufficient, the number of Co2Nb phases is small, and the pinning sites are sparse, so the coercivity cannot exceed 550 Oe. As the Nb layer thickens, the amount of non-magnetic Co2Nb phase increases, which slightly dilutes the proportion of the ferromagnetic α1 phase (FeCo), resulting in a slight decrease in remanence. However, the 6106 Oe of Example 1 is still far higher than the practical requirement of ≥5000 Oe for magnetic encoders, which is a controllable magnetic dilution.

[0094] Comparative Examples 1-6 isolated the necessity of each set of parameters by examining the absence of key functional layers or the abnormal thickness of the Nb layer, and their performance deviations directly correspond to the causal relationship between structure, mechanism, and performance. First, the coercivity of the magnetic code disk material prepared in Comparative Example 1 (without Bi layer + without Nb layer) was 381 Oe, which was 195 Oe lower than that in Example 1, a decrease of 33.8%, and the remanence was 11766 Oe (5660 Oe higher than that in Example 1). This shows that the double intercalation (Bi+Nb) is irreplaceable. The absence of the Bi layer leads to the absence of "defect pinning + grain refinement + amplitude modulation decomposition promotion", resulting in fewer defects, coarse grains, and insufficient amplitude modulation decomposition in the AlNiFeCo film. The absence of the Nb layer leads to the absence of "Co2Nb dispersed pinning phase", resulting in a sharp drop in the resistance to magnetic domain wall movement, and the coercivity falls below the practical limit, while high remanence alone is meaningless.

[0095] The magnetic code disk material prepared in Comparative Example 2 (without the Nb layer, only the Bi layer is retained) has a coercivity of 450 Oe, which is 126 Oe lower than that of Example 1, a decrease of 21.9%. Its remanence is 9680 Oe, which is 3574 Oe higher than that of Example 1. This shows that the Bi layer can only lay the foundation. Retaining the Bi layer can improve the coercivity to a certain extent through defect / grain refinement (450 Oe > 381 Oe of Comparative Example 1). However, the lack of the "dispersed pinning network" of the Nb layer makes it impossible to generate the Co2Nb phase, and the coercivity cannot break through 500 Oe. This proves that the Nb layer is the core to achieve the breakthrough of "coercivity from 450 Oe to 576 Oe". The reason for its high remanence is that the non-magnetic phase introduced by the absence of the Nb layer, and only the α2 phase (weak magnetism) promoted by the Bi layer, leads to slight magnetic dilution. Therefore, the remanence is significantly higher than that of Example 1, but the insufficient coercivity is still a fatal defect.

[0096] The coercivity of the magnetic code disk material prepared in Comparative Example 3 (without the Bi layer, only the Nb layer) was 482 Oe, which was 94 Oe lower than that in Example 1, a decrease of 16.3%. The remanence was 9165 Oe, which was 3059 Oe higher than that in Example 1. This shows that the Bi layer "paved the way" for the Nb layer: the lack of a Bi layer leads to coarse grains in the AlNiFeCo film (no Bi inhibits grain boundary migration) and insufficient amplitude modulation decomposition (no Bi promotes Fe / Co diffusion). Even if the Nb layer generates the Co2Nb phase, the pinning phase cannot be evenly distributed due to the poor microstructure of the substrate (uneven grains, few defects), resulting in low pinning efficiency. Comparative Examples 2 and 3 verify the synergistic effect. The coercivity of the Nb layer alone (482 Oe) is slightly higher than that of the Bi layer alone (450 Oe), but much lower than that of the double intercalation layer (576 Oe). This proves that the basic + strengthening synergistic effect of Bi and Nb is the key to the performance breakthrough.

[0097] The coercivity of the magnetic code disk material prepared in Comparative Example 4 (Nb layer = 2nm, too thin) was 455 Oe, which was 121 Oe lower than that in Example 1, a decrease of 21.0%, and the remanence was 8216 Oe, which was 2110 Oe higher than that in Example 1. This indicates that the Nb layer is too thin → insufficient pinning phase: the 2nm Nb layer can only provide a small number of Nb atoms. The Co2Nb phase generated after annealing is small in quantity and sparsely distributed, and cannot form a continuous "diffuse pinning network". The domain walls are still easy to move, resulting in low coercivity. Because there is little Co2Nb phase, the dilution effect on the ferromagnetic α1 phase is weak, so the remanence is still relatively high, but the coercivity does not meet the practical standard.

[0098] The coercivity of the magnetic code disk material prepared in Comparative Example 5 (Nb layer = 8nm, still not reaching the effective thickness) was 460 Oe, which was 116 Oe lower than that in Example 1, a decrease of 20.3%, and the remanence was 7690 Oe, which was 1584 Oe higher than that in Example 1. This indicates that the 8nm Nb layer has not yet broken through the effective threshold. Although the Nb layer thickness was doubled compared to Comparative Example 4, it was still insufficient to generate a sufficient amount of Co2Nb phase, the pinning sites were still not dense, and the improvement in coercivity was limited. As the Nb layer thickness increased, the Co2Nb phase increased slightly, the magnetic dilution effect was slightly enhanced, and the remanence decreased compared to Comparative Example 4 (8216 Oe → 7690 Oe), reflecting the linear correlation between Nb thickness, magnetic dilution, and remanence.

[0099] The magnetic code disk material prepared in Comparative Example 6 (Nb layer = 20nm, too thick) exhibits a coercivity of 615 Oe, which is 39 Oe higher than that in Example 1. Its remanence is 4831 Oe, which is 1275 Oe lower than that in Example 1, falling below the practical threshold of 5000 Oe. This indicates that the 20nm Nb layer leads to the diffusion of a large number of Nb atoms, generating excessive Co2Nb nonmagnetic phase. Although the pinning force is extremely strong (highest coercivity), the ferromagnetic α1 phase (FeCo) is excessively diluted, causing a sharp drop in magnetic moment transmission efficiency and a remanence below the practical threshold (≥5000 Oe). Consequently, the output signal strength of the magnetic code disk is insufficient, rendering it completely unusable. A magnetic code disk must simultaneously satisfy "coercivity ≥500 Oe + remanence ≥5000 Oe." Comparative Example 6 breaks this balance, proving that there is an upper limit threshold for Nb layer thickness (around 18nm), and excessive thickness leads to functional failure.

[0100] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method for producing a magnetic code disc material for a humanoid robot effector, characterized by, The method comprises the steps of: depositing a Bi layer on the surface of the substrate by magnetron sputtering with Bi as the target material, wherein the thickness of the Bi layer is 8-15 nm; depositing an AlNiFeCo film on the surface of the Bi layer by magnetron sputtering with AlNiFeCo as the target material, wherein the thickness of the AlNiFeCo film is 50-100 nm; depositing a Nb layer on the surface of the AlNiFeCo film by magnetron sputtering with Nb as the target material, wherein the thickness of the Nb layer is 14-18 nm; depositing a Ta layer on the surface of the Nb layer by magnetron sputtering with Ta as the target material, wherein the thickness of the Ta layer is 5-10 nm, thereby obtaining a composite layer material; The composite layer material is subjected to vacuum annealing treatment, wherein the annealing temperature is 740-760℃, the annealing time is 25-35min, and the annealing vacuum degree is 1×10 -5 -5×10 -5 Pa, to obtain the magnetic code disc material for the human-shaped robot executor.

2. The method of claim 1, wherein the magnetic code disk material for a humanoid robot effector is prepared by the steps of: In the step of depositing Bi layer on the surface of the substrate by using Bi as target material and by using magnetron sputtering method, the sputtering power is 50-100 W, the vacuum degree of the sputtering chamber is 1×10 -5 -3×10 -5 Pa, the working gas is argon, and the argon pressure is 0.2-0.4 Pa. ​ 3. The method of claim 1, wherein the magnetic code disk material for a humanoid robot effector is prepared by the steps of: In the step of depositing the AlNiFeCo film on the surface of the Bi layer by using the AlNiFeCo as the target material and the magnetron sputtering method, the sputtering power is 50-100 W, the vacuum degree of the sputtering chamber is 1×10 -5 -3×10 -5 Pa, the working gas is argon, and the argon pressure is 0.2-0.4 Pa. ​ 4. The method of claim 1, wherein the magnetic code disk material for a humanoid robot effector is prepared by the steps of: the element composition of the target material AlNiFeCo comprises, by mass percentage, 30-35% of Fe, 30-40% of Co, 10-20% of Ni, 5-10% of Al, 3-6% of Ti, and 2-5% of Cu. ​ 5. The method for preparing the magnetic encoder disk material for the humanoid robot actuator according to claim 1, characterized in that, The thickness of the Bi layer is 10 nm, the thickness of the AlNiFeCo film is 50 nm, the thickness of the Nb layer is 18 nm, and the thickness of the Ta layer is 8 nm.

6. The method for preparing the magnetic encoder disk material for the humanoid robot actuator according to claim 1, characterized in that, The substrate is one of a glass substrate and a silicon substrate.

7. A magnetic code disk material for humanoid robot manipulators, characterized by The magnetic code disc material for human-shaped robot actuators is prepared by the preparation method of the magnetic code disc material for human-shaped robot actuators according to claim 1, and the magnetic code disc material for human-shaped robot actuators comprises a substrate, a Bi layer, an AlNiFeCo film, a Nb layer, and a Ta layer which are sequentially stacked.

8. Use of a magnetic code disc material for a humanoid robot effector according to any one of claims 7, characterized in that, The magnetic code disc material for human-shaped robot actuators is used to prepare a magnetic encoder.

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