A relative inclination amount detection device

Abstract

The embodiment of the present application discloses a relative tilt amount detection device for measuring the relative tilt amount between a substrate and a chip, comprising a self-collimator outside the interval between the chip and the substrate and a light beam splitter between the interval between the chip and the substrate. The self-collimator is provided with a light source generator and an image sensor. The light beam splitter divides the total detection light beam from the light source generator into a first split beam and a second split beam, the first split beam is projected to a first detection surface and reflected to form a first reflected light beam, and the second split beam is projected to a second detection surface and reflected to form a second reflected light beam. The image sensor converts the first reflected light beam into a first image and the second reflected light beam into a second image, and measures the relative tilt amount between the chip and the substrate through the positional relationship between the first image and the second image. The present application realizes non-contact detection of the relative tilt amount, significantly reduces the influence of mechanical motion error on the measurement result, and greatly improves the detection precision and reliability.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a relative tilt detection device. Background Technology

[0002] Chip bonding is the process of physically connecting a chip to a substrate (such as a packaging substrate or other chips). Tilt measurement (also known as tilt angle or angular error) is a crucial step in chip bonding; tilt refers to the relative angular error between the chip and the substrate. Inappropriate tilt can cause uneven mechanical stress during bonding, leading to cracks or damage to the package and affecting the long-term stability and reliability of the entire system. Furthermore, tilt errors can also cause poor contact at pins, pads, or optical fibers after bonding, affecting electrical performance or optical signal transmission.

[0003] Traditional methods for measuring chip tilt typically involve selecting at least three different locations on the chip surface and measuring the distance between these locations using a moving sensor to calculate the chip tilt. However, the movement of the sensor can introduce errors in its motion accuracy, which are then added to the tilt calculation, leading to inaccurate results and hindering precise adjustment of the chip or substrate. Summary of the Invention

[0004] Embodiments of the present invention provide a relative tilt amount detection device, which aims to effectively improve the accuracy of tilt amount measurement during chip bonding process, so as to accurately measure chips or substrates.

[0005] To address the aforementioned technical problems, embodiments of the present invention disclose the following technical solutions:

[0006] A relative tilt detection device is provided for detecting the relative tilt of a chip and a substrate, and has a first direction, a second direction, and a third direction that are perpendicular to each other. A first detection surface of the chip and a second detection surface of the substrate are positioned opposite each other along the first direction and spaced apart. The relative tilt detection device includes:

[0007] Self-collimators and optical beam splitters are arranged at intervals along the second direction;

[0008] The autocollimator is located outside the gap between the chip and the substrate, and the autocollimator is equipped with a light source generator and an image sensor.

[0009] The optical beam splitter is located between the chip and the substrate;

[0010] The optical beam splitter can divide the total detection beam from the light source generator into a first beam and a second beam. The first beam is projected onto the first detection surface and reflected to form a first reflected beam, and the second beam is projected onto the second detection surface and reflected to form a second reflected beam. The image sensor receives the first reflected beam and the second reflected beam through the optical beam splitter, converts the first reflected beam into a first pattern, and converts the second reflected beam into a second pattern. The image sensor is configured to detect the relative tilt of the chip and the substrate through the positional relationship between the first pattern and the second pattern.

[0011] In addition to one or more of the features disclosed above, or as an alternative, a portion of the total detection beam is directly reflected by the optical beam splitter to form the first beam;

[0012] The optical beam splitter has a reflector on the side facing away from the autocollimator. A portion of the total detection beam passes through the optical beam splitter and is projected onto the reflector. After being reflected back to the optical beam splitter by the reflector, a portion of the total detection beam is reflected by the optical beam splitter to form the second beam split.

[0013] In addition to one or more of the features disclosed above, or as an alternative, the reflector is a reflective film that covers the side of the beam splitter facing away from the autocollimator.

[0014] In addition to one or more of the features disclosed above, or alternatively, the propagation directions of the first beam and the second beam are both parallel to the first direction.

[0015] In addition to one or more of the features disclosed above, or as an alternative, the image sensor presents a reference pattern having a reference center, and the chip and the substrate are relatively parallel when the first pattern and the second pattern are centrally symmetrical about the reference center.

[0016] In addition to one or more of the features disclosed above, or as an alternative, a wedge prism is disposed between the chip and the optical beam splitter, the first beam being deflected by the wedge prism and then projected onto the chip, and the first reflected beam being transmitted to the image sensor after passing through the wedge prism and the optical beam splitter.

[0017] Alternatively, a wedge prism is disposed between the substrate and the beam splitter. The second beam is deflected by the wedge prism and then projected onto the substrate. The second reflected beam is transmitted to the image sensor after passing through the wedge prism and the beam splitter.

[0018] In addition to one or more of the features disclosed above, or as an alternative, when the wedge prism is located between the chip and the beam splitter,

[0019] The first pattern includes an initial first pattern and a deflected first pattern. The initial first pattern is defined as the first reflected beam formed after the first beam is directly projected onto the first detection surface without passing through the wedge prism. The deflected first pattern is defined as the first reflected beam formed after the first beam is projected onto the first detection surface after being deflected by the wedge prism. The initial first pattern and the deflected first pattern have a first offset y1 and a second offset x1.

[0020] The image sensor displays a reference pattern with intersecting X-axis and Y-axis, the intersection of which is the reference center. The image sensor also displays a first target pattern, a first deflection pattern, and a second pattern, the first target pattern and the first deflection pattern being symmetrical about the reference center.

[0021] During the adjustment of the substrate, the second pattern is moved synchronously by the substrate, so that the second pattern and the first target pattern have a first offset y1 on the Y-axis and a second offset x1 on the X-axis, and the chip and the substrate are parallel.

[0022] In addition to one or more of the features disclosed above, or as an alternative,

[0023] When the wedge prism is located between the substrate and the beam splitter

[0024] The second pattern includes an initial second pattern and a deflected second pattern. The initial second pattern is defined as the result of the transformation of the second reflected beam formed after the second beam is directly projected onto the second detection surface without passing through the wedge prism. The deflected second pattern is defined as the result of the transformation of the second reflected beam formed after the second beam is projected onto the second detection surface after being deflected by the wedge prism. The initial second pattern and the deflected second pattern have a third offset y2 and a fourth offset x2.

[0025] The image sensor displays a reference pattern with intersecting X-axis and Y-axis, the intersection of which is the reference center. The image sensor also displays a second target pattern, a deflected second pattern, and the first pattern, with the second target pattern and the deflected second pattern being symmetrical about the reference center.

[0026] During the adjustment of the chip, the chip synchronously drives the first graphic to move, so that the first graphic and the second target graphic have a third offset y2 on the Y-axis and a fourth offset x2 on the X-axis, and the chip and the substrate are parallel.

[0027] In addition to one or more of the features disclosed above, or as an alternative, the reflector is a mirror configured to be rotatably disposed on the side of the beam splitter away from the autocollimator, so as to adjust the emission direction of the second beam by the rotation angle of the mirror and tilt the emission direction of the second beam relative to the second direction and / or the third direction.

[0028] In addition to one or more of the features disclosed above, or as an alternative, the second pattern includes an initial second pattern and an inclined second pattern. The initial second pattern is defined as being obtained by converting a second reflected beam formed after the second beam with an un-tilted exit direction is directly projected onto the second detection surface. The inclined second pattern is defined as being obtained by converting a second reflected beam formed after the second beam with an tilted exit direction is projected onto the second detection surface. The initial second pattern and the inclined second pattern have a fifth offset y3 and a sixth offset x3.

[0029] The image sensor displays a reference pattern with intersecting X-axis and Y-axis, the intersection of which is the reference center. The image sensor also displays a third target pattern, a tilted second pattern, and the first pattern, with the third target pattern and the tilted second pattern being symmetrical about the reference center.

[0030] During the adjustment of the chip, the chip synchronously drives the first graphic to move, so that the first graphic and the third target graphic have a fifth offset y3 on the Y-axis and a sixth offset x3 on the X-axis, and the chip and the substrate are parallel.

[0031] In addition to one or more of the features disclosed above, or as an alternative, both the first and second graphics are crosshair cursors.

[0032] One of the above technical solutions has the following advantages or beneficial effects: This application, through the arrangement and coordination of an autocollimator and an optical beamsplitter, achieves non-contact detection of the relative tilt of the chip and substrate based on optical principles. Compared to traditional tilt measurement methods that require the sensor to move to multiple positions on the chip surface for measurement, which may lead to inaccurate calculation of the relative tilt due to the superposition of mechanical motion errors, this application significantly reduces the impact of mechanical motion errors on the measurement results, greatly improving detection accuracy and reliability. Simultaneously, the optical system using an autocollimator combined with an optical beamsplitter can convert the optical signals corresponding to the chip and substrate into graphic information, presenting a first graphic and a second graphic on the image sensor. The relative tilt of the chip and substrate can be calculated based on the positional relationship between the first and second graphics. Furthermore, this application can directly adjust the position of the chip and substrate in real time based on the relative positional relationship of the first and second graphics. By observing whether the graphics reach a preset position, it can be determined whether the chip and substrate are relatively parallel, greatly simplifying the process of adjusting the tilt angle of the chip and substrate. Attached Figure Description

[0033] The technical solution and other beneficial effects of the present invention will become apparent from the following detailed description of specific embodiments of the invention, in conjunction with the accompanying drawings.

[0034] Figure 1 This is a schematic diagram of the structure of a relative tilt detection device provided in an embodiment of this application. Figure 1 ;

[0035] Figure 2 This is a schematic diagram of the structure of a relative tilt detection device provided in an embodiment of this application. Figure 2 ;

[0036] Figure 3 This is a schematic diagram of the structure of a relative tilt detection device provided in an embodiment of this application. Figure 3 ;

[0037] Figure 4 This is a display illustration of a graphic display provided in an embodiment of this application. Figure 1 ;

[0038] Figure 5 This is a display illustration of a graphic display provided in an embodiment of this application. Figure 2 ;

[0039] Figure 6 This is a display illustration of a graphic display provided in an embodiment of this application. Figure 3 ;

[0040] Figure 7 This is a display illustration of a graphic display provided in an embodiment of this application. Figure 4 ;

[0041] Explanation of reference numerals in the attached figures:

[0042] 10. Chip; 11. Substrate;

[0043] 20. Autocollimator;

[0044] 30. Optical beam splitter;

[0045] 40. Main detection beam; 41. First beam splitter; 42. Second beam splitter;

[0046] 50. First figure; 501. Deflected first figure; 51. Second figure; 511. Deflected second figure; 512. Tilted second figure; 52. First target figure; 53. Second target figure; 54. Third target figure; 55. Reference figure; 551. Reference center;

[0047] 60. Reflector; 60a. Reflective film; 60b. Reflector;

[0048] 70. Wedge prism. Detailed Implementation

[0049] To make the objectives, technical solutions, and beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described in this specification are merely for explaining the invention and are not intended to limit the invention.

[0050] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0051] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, a direct connection, or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0052] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0053] This application discloses a relative tilt detection device for detecting the relative tilt of a chip 10 and a substrate 11. The device has three perpendicular directions: a first direction, a second direction, and a third direction. The first detection surface of the chip 10 and the second detection surface of the substrate 11 are positioned opposite each other along the first direction and spaced apart. It should be noted that during the bonding process of the chip 10, the substrate 11 mentioned in the disclosed technical solution is a support platform that cooperates with the chip 10 for relative tilt detection and bonding. For example, the substrate 11 can be a packaging substrate or a functional chip.

[0054] Reference Figure 1 and Figure 4The relative tilt detection device disclosed in this application includes an autocollimator 20 and an optical beam splitter 30. The autocollimator 20 and the optical beam splitter 30 are arranged at intervals along a second direction. The autocollimator 20 is located outside the interval between the chip 10 and the substrate 11, while the optical beam splitter 30 is located within the interval between the chip 10 and the substrate 11. Specifically, the autocollimator 20 includes a light source generator and an image sensor. The optical beam splitter 30 can split the total detection beam 40 from the light source generator into a first beam 41 and a second beam 42. The first beam 41 is projected onto a first detection surface and reflected to form a first reflected beam, while the second beam 42 is projected onto a second detection surface and reflected to form a second reflected beam. The image sensor receives the first and second reflected beams through the optical beam splitter 30, converting the first reflected beam into a first pattern 50 and the second reflected beam into a second pattern 51. The image sensor is configured to detect the relative tilt of the chip 10 and the substrate 11 based on the positional relationship between the first pattern 50 and the second pattern 51.

[0055] This application, through the coordinated arrangement of the autocollimator 20 and the beam splitter 30, achieves non-contact detection of the relative tilt of the chip 10 and the substrate 11 based on optical principles, without requiring sensor movement. Compared to traditional tilt measurement methods that require the sensor to move to multiple positions on the surface of the chip 10 for measurement, potentially leading to inaccurate calculations of the relative tilt due to the accumulation of mechanical motion errors, this application significantly reduces the impact of mechanical motion errors on the measurement results, greatly improving detection accuracy and reliability. Simultaneously, the optical system using the autocollimator 20 combined with the beam splitter 30 can convert the optical signals corresponding to the chip 10 and the substrate 11 into graphic information, presenting a first graphic 50 and a second graphic 51 on the image sensor. The relative tilt of the chip 10 and the substrate 11 can be calculated based on the positional relationship of the first graphic 50 and the second graphic 51. Furthermore, this application can directly adjust the positions of the chip 10 and the substrate 11 in real time based on the relative positional relationship of the first graphic 50 and the second graphic 51. By observing whether the graphic reaches a preset position, it can be determined whether the chip 10 and the substrate 11 are relatively parallel, greatly simplifying the process of adjusting the tilt angle of the chip 10 and the substrate 11.

[0056] Furthermore, before calculating the relative tilt of the chip 10 and the substrate 11 based on the positional relationship of the first pattern 50 and the second pattern 51 on the image sensor, and before adjusting the angle of the chip 10 or the substrate 11 (based on the positions of the first pattern 50 and the second pattern 51 as presented by the current tilt of the chip 10 and the substrate 11), a reference center 551 is typically calibrated on the image processor. It should be noted that the reference image can be a vertical and intersecting X-axis and Y-axis, and the intersection of the X-axis and Y-axis constitutes the reference center 551.

[0057] Furthermore, in some embodiments, a reflector 60 is provided on the side of the optical beam splitter 30 facing away from the autocollimator 20. The first beam split 41 is formed by direct reflection of a portion of the total detection beam 40 by the optical beam splitter 30. The second beam split 42 is formed by a portion of the total detection beam 40 passing through the optical beam splitter 30 and projecting onto the reflector 60, being reflected back to the optical beam splitter 30 by the reflector 60, and then a portion of the total detection beam 40 is reflected by the optical beam splitter 30.

[0058] Reference Figure 1 In the first embodiment disclosed in this application, the reflector 60 is a reflective film 60a, which covers the side of the optical beamsplitter 30 facing away from the autocollimator 20. The reflective film 60a can be coated to cover the side of the optical beamsplitter facing away from the autocollimator 20. The propagation direction of the first beam 41 generated by the optical beamsplitter 30 after the total detection beam 40 passes through the total detection beam 40 is parallel to the first direction, and the propagation direction of the second beam 42 generated by the optical beamsplitter 30 and the reflective film 60a is also parallel to the first direction.

[0059] In Embodiment 1, when the first pattern 50 and the second pattern 51 are not centrally symmetrical about the reference center 551 of the image processor, it indicates that there is a relative tilt between the chip 10 and the substrate 11 (i.e., the relative tilt is not zero). Before bonding the chip 10, this relative tilt needs to be minimized as much as possible, bringing it close to zero, thereby achieving the ideal state where the chip 10 and the substrate 11 are relatively parallel. In Embodiment 1 of this application, typically one of the chip 10 or the substrate 11 can be used as a positioning reference. By adjusting the tilt angle of the other, the first pattern 50 and the second pattern 51 are made centrally symmetrical about the reference center 551 on the display interface of the image processor. Figure 4 When the first graphic 50 and the second graphic 51 are centrally symmetrical, it can be confirmed that the chip 10 and the substrate 11 are relatively parallel. For example, by fixing the chip 10 as a positioning reference and adjusting the tilt angle of the substrate 11 in the second and third directions, the second graphic 51 will translate on the display interface of the image processor during the adjustment process. By observing and adjusting, the second graphic 51 can be gradually made centrally symmetrical with the first graphic 50 about the reference center 551, thus realizing the relative parallelism between the chip 10 and the substrate 11.

[0060] It is worth mentioning that when the relative tilt of chip 10 and substrate 11 is small (i.e., the tilt of chip 10 relative to substrate 11 is low, or the tilt of substrate 11 relative to chip 10 is low), the first graphic 50 and the second graphic 51 present a near-centrally symmetrical relative positional relationship on the display interface of the image processor. In this case, the value of the relative tilt is relatively small, making accurate calculation difficult. Furthermore, because the change in the relative tilt is too subtle, fine-tuning chip 10 or substrate 11 also presents significant challenges. To ensure accurate calculation of the relative tilt and precise adjustment of chip 10 and substrate 11 even when they are approximately parallel, this application amplifies the relative tilt by introducing a known tilt, thus guaranteeing the final detection and adjustment accuracy. Specifically, by introducing a known tilt, a small-scale tilt error is converted into a measurable larger-scale error, effectively amplifying the change in relative tilt, making it more operable during measurement and adjustment, while ensuring the accuracy and reliability of the final adjustment. Specifically, this application implements the introduction of a known tilt through the following embodiments.

[0061] In the second embodiment disclosed in this application, a wedge prism 70 is provided between the chip 10 and the optical beam splitter 30 (see reference). Figure 2 Alternatively, a wedge prism 70 can be placed between the substrate 11 and the beam splitter 30 to amplify the relative tilt. Specifically, the wedge prism 70 has a preset tilt, and the beam splitting after passing through the wedge prism 70 will be deflected, thereby changing the beam caused by the relative tilt of the chip 10 and the substrate 11. This change will ultimately manifest as a change in the position of the first graphic 50 or the second graphic 51 on the image processor display interface. The second beam splitter 42 is projected onto the substrate 11 after being deflected by the wedge prism 70, and the second reflected beam is transmitted to the image sensor after passing through the wedge prism 70 and the beam splitter 30.

[0062] For further explanation, refer to Figure 2When the wedge prism 70 is positioned between the chip 10 and the beam splitter 30, the first beam 41, after being deflected by the wedge prism 70, is projected onto the chip 10. The first reflected beam is transmitted to the image sensor after passing through the wedge prism 70 and the beam splitter 30. At this time, the first pattern 50 associated with the first beam 41 includes an initial first pattern and a deflected first pattern 501. The initial first pattern is defined as the first reflected beam formed after the first beam 41 is directly projected onto the first detection surface without passing through the wedge prism 70 (the position of the initial first pattern mentioned in Embodiment 2 on the display interface of the image processor corresponds to the chip 10 and the substrate 11 with the same relative tilt amount; the position of the first pattern 50 obtained by detecting the relative tilt amount in Embodiment 1 on the display interface of the image processor). The deflected first pattern 501 is defined as the first reflected beam formed after the first beam 41 is deflected by the wedge prism 70 and projected onto the first detection surface. Because the wedge prism 70 has a preset deflection amount, the corresponding pattern change is the displacement between the initial first pattern and the deflected first pattern 501, specifically manifested as a first offset y1 in the Y-axis direction and a second offset x1 in the X-axis direction. There is a corresponding relationship between the preset tilt amount of the wedge prism 70 and the first offset y1 and the second offset x1. In actual testing, knowing the preset tilt amount of the wedge prism 70 allows us to know the first offset y1 and the second offset x1 between the deflected first pattern 501 and the initial first pattern. The preset tilt amount of the wedge prism 70 is related to its geometric configuration (e.g., the tilt angle between the incident and exit surfaces of the first beam splitter 41). The larger the preset tilt amount of the wedge prism 70, the larger the introduced first offset y1 and / or second offset x1. It should be noted that either the introduced first offset y1 or the second offset x1 can be zero, depending on the geometric configuration of the wedge prism 70.

[0063] Reference Figure 5 When the wedge prism 70 is positioned between the chip 10 and the beam splitter 30, the chip 10 and the substrate 11 are made relatively parallel by adjusting the substrate 11. Specifically, the image processor's display interface will show a first deflected graphic 501, a first target graphic 52, and a second graphic 51. At this time, the first deflected graphic 501 and the first target graphic 52 are centrally symmetrical with respect to the reference center 551. By adjusting the angle of the substrate 11, the second graphic 51 can be moved synchronously, so that the second graphic 51 is offset from the first target graphic 52 by a first offset y1 in the Y-axis direction and by a second offset x1 in the X-axis direction. When the offset between the second graphic 51 and the first target graphic 52 reaches a preset position, the chip 10 and the substrate 11 are made relatively parallel.

[0064] Furthermore, when the wedge prism 70 is positioned between the substrate 11 and the beam splitter 30, the second beam 42 is projected onto the substrate 11 after being pre-deflected by the wedge prism 70, and the second reflected beam is transmitted to the image sensor after passing through the wedge prism 70 and the beam splitter 30. At this time, the second pattern 51 associated with the second beam 42 includes an initial second pattern and a deflected second pattern 511. The initial second pattern is defined as the result of the conversion of the second reflected beam formed after the second beam 42 is directly projected onto the second detection surface without passing through the wedge prism 70 (the position of the initial second pattern mentioned in Embodiment 2 on the display interface of the image processor corresponds to the chip 10 and the substrate 11 with the same relative tilt amount, and the position of the second pattern 51 obtained by detecting the relative tilt amount in Embodiment 1 on the display interface of the image processor). The deflected second pattern 511 is defined as the result of the conversion of the second reflected beam formed after the second beam 42 is projected onto the second detection surface after being pre-deflected by the wedge prism 70. Similarly, since the wedge prism 70 has a preset deflection amount, the corresponding pattern change is the displacement between the initial second pattern and the deflected second pattern 511. Specifically, this manifests as a third offset y2 and a fourth offset x2 between the initial second pattern and the deflected second pattern 511. There is a corresponding relationship between the preset tilt amount of the wedge prism 70 and the third offset y2 and fourth offset x2. In actual testing, knowing the preset tilt amount of the wedge prism 70 allows us to know the third offset y2 and fourth offset x2 between the deflected second pattern 511 and the initial second pattern. The preset tilt amount of the wedge prism 70 is related to its geometric configuration (e.g., the tilt angle between the incident and exit surfaces of the second beam splitter 42). The larger the preset tilt amount of the wedge prism 70, the larger the introduced third offset y2 and / or fourth offset x2. It should be noted that either the introduced third offset y2 or fourth offset x2 can be zero, depending on the geometric configuration of the wedge prism 70.

[0065] Reference Figure 6 When the wedge prism 70 is positioned between the substrate 11 and the beam splitter 30, the chip 10 is adjusted to achieve relative parallelism between the chip 10 and the substrate 11. Specifically, the image processor's display interface will show a deflected second graphic 511, a second target graphic 53, and a first graphic 50. At this time, the deflected second graphic 511 and the second target graphic 53 are centrally symmetrical with respect to the reference center 551. By adjusting the angle of the chip 10, the first graphic 50 can be moved synchronously, so that the first graphic 50 is offset from the second target graphic 53 by a third offset y2 in the Y-axis direction and by a fourth offset x2 in the X-axis direction. When the offset between the first graphic 50 and the second target graphic 53 reaches a preset position, the chip 10 and the substrate 11 are relatively parallel.

[0066] In the third embodiment disclosed in this application, the relative tilt between the substrate 11 and the chip 10 is amplified by setting the reflector 60 as a reflector 60b and rotating the reflector 60b to the side of the optical beam splitter 30 away from the autocollimator 20. Specifically, the reflective surface of the reflector 60b is disposed facing the optical beam splitter 30, and the emission direction of the second beam splitter 42 is adjusted by the rotation angle of the reflector 60b, and the emission direction of the second beam splitter 42 is tilted relative to the second direction and / or the third direction (equivalent to changing the emission angle of the second beam splitter 42 by changing the rotation angle of the reflector 60b to amplify the relative tilt between the substrate 11 and the chip 10, but the actual tilt between the substrate 11 and the chip 10 is not changed).

[0067] For further explanation, refer to Figure 3 and Figure 7 It should be noted that Figure 3 The reflector 60b is for illustrative purposes only. The second pattern 51 associated with the second beam splitter 42 includes an initial second pattern and a tilted second pattern 512. The initial second pattern is defined as the result of the conversion of the second reflected beam formed after the second beam splitter 42, with its emission direction not tilted, is directly projected onto the second detection surface (the position of the initial second pattern mentioned in Embodiment 3 on the display interface of the image processor corresponds to the chip 10 and substrate 11 with the same relative tilt amount; the position of the second pattern 51 obtained by detecting the relative tilt amount in Embodiment 1 on the display interface of the image processor). The tilted second pattern 512 is defined as the result of the conversion of the second reflected beam formed after the second beam splitter 42, with its emission direction tilted, is projected onto the second detection surface. Similarly, since the reflector 60b has a rotation angle, the pattern change corresponding to this rotation angle is the displacement between the initial second pattern and the tilted second pattern 512. Specifically, there are a fifth offset y3 and a sixth offset x3 between the initial second pattern and the tilted second pattern 512. The rotation angle of reflector 60b corresponds to the fifth offset y3 and the sixth offset x3. In actual testing, knowing the rotation angle of reflector 60b allows us to determine the fifth offset y3 and the sixth offset x3 between the initial second shape and the tilted second shape 512. It should be noted that reflector 60b can rotate about an axis parallel to the first direction, or about an axis parallel to a third direction, and can also undergo one type of rotation first, followed by the other. One of the introduced fifth offset y3 and sixth offset x3 can be zero.

[0068] It is worth mentioning that, in Embodiment 2, the reflector 60 of the relative tilt amount detection device disclosed in Embodiment 2 can be either a reflective film 60a or a reflector 60b. If the reflector 60 is a reflector 60b, the rotation angle of the reflector 60b is zero.

[0069] Furthermore, in some embodiments, the first graphic 50 (including embodiments one, two, and three involving various first graphics 50) and the second graphic 51 (including embodiments one, two, and three involving various second graphics 51) are both crosshair cursors.

[0070] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0071] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A relative tilt detection device for detecting the relative tilt of a chip and a substrate, having a first direction, a second direction, and a third direction that are perpendicular to each other, wherein a first detection surface of the chip and a second detection surface of the substrate are arranged opposite to each other and spaced apart along the first direction, characterized in that, The relative tilt detection device includes: Self-collimators and optical beam splitters are arranged at intervals along the second direction; The autocollimator is located outside the gap between the chip and the substrate, and the autocollimator is equipped with a light source generator and an image sensor. The optical beam splitter is located between the chip and the substrate; A wedge prism is located between the chip and the optical beam splitter, or between the substrate and the optical beam splitter. The optical beam splitter divides the total detection beam from the light source generator into a first beam and a second beam. The first beam is projected onto the first detection surface and reflected to form a first reflected beam, while the second beam is projected onto the second detection surface and reflected to form a second reflected beam. When the wedge prism is located between the chip and the optical beam splitter, the wedge prism causes the first beam to be deflected by a preset angle before being projected onto the first detection surface. When the wedge prism is located between the substrate and the optical beam splitter, the wedge prism causes the second beam to be deflected by a preset angle before being projected onto the second detection surface. The image sensor receives the first reflected beam and the second reflected beam through the optical beam splitter, converts the first reflected beam into a first pattern, and converts the second reflected beam into a second pattern. The image sensor is configured to detect the relative tilt of the chip and the substrate based on the positional relationship between the first and second patterns.

2. The relative tilt detection device according to claim 1, characterized in that, Part of the total detection beam is directly reflected by the optical beam splitter to form the first split beam; The optical beam splitter has a reflector on the side facing away from the autocollimator. A portion of the total detection beam passes through the optical beam splitter and is projected onto the reflector. After being reflected back to the optical beam splitter by the reflector, a portion of the total detection beam is reflected by the optical beam splitter to form the second beam split.

3. The relative tilt detection device according to claim 2, characterized in that, The reflector is a reflective film, which covers the side of the optical beam splitter facing away from the autocollimator.

4. The relative tilt detection device according to claim 3, characterized in that, The propagation directions of the first beam and the second beam are both parallel to the first direction.

5. The relative tilt detection device according to claim 3, characterized in that, The image sensor displays a reference pattern with a reference center. When the first pattern and the second pattern are symmetrical about the reference center, the chip and the substrate are relatively parallel.

6. The relative tilt detection device according to claim 1, characterized in that, When the wedge prism is located between the chip and the beam splitter, the first reflected beam is transmitted to the image sensor after passing through the wedge prism and the beam splitter; Alternatively, when the wedge prism is located between the substrate and the beam splitter, the second reflected beam is transmitted to the image sensor via the wedge prism and the beam splitter.

7. The relative tilt detection device according to claim 6, characterized in that, When the wedge prism is located between the chip and the optical beam splitter The first pattern includes an initial first pattern and a deflected first pattern. The initial first pattern is defined as the first reflected beam formed after the first beam is directly projected onto the first detection surface without passing through the wedge prism. The deflected first pattern is defined as the first reflected beam formed after the first beam is projected onto the first detection surface after being deflected by the wedge prism. The initial first pattern and the deflected first pattern have a first offset y1 and a second offset x1. The image sensor displays a reference pattern with intersecting X-axis and Y-axis, the intersection of which is the reference center. The image sensor also displays a first target pattern, a first deflection pattern, and a second pattern, the first target pattern and the first deflection pattern being symmetrical about the reference center. During the adjustment of the substrate, the second pattern is moved synchronously by the substrate, so that the second pattern and the first target pattern have a first offset y1 on the Y-axis and a second offset x1 on the X-axis, and the chip and the substrate are parallel.

8. The relative tilt detection device according to claim 6, characterized in that, When the wedge prism is located between the substrate and the beam splitter The second pattern includes an initial second pattern and a deflected second pattern. The initial second pattern is defined as the result of the transformation of the second reflected beam formed after the second beam is directly projected onto the second detection surface without passing through the wedge prism. The deflected second pattern is defined as the result of the transformation of the second reflected beam formed after the second beam is projected onto the second detection surface after being deflected by the wedge prism. The initial second pattern and the deflected second pattern have a third offset y2 and a fourth offset x2. The image sensor displays a reference pattern with intersecting X-axis and Y-axis, the intersection of which is the reference center. The image sensor also displays a second target pattern, a deflected second pattern, and the first pattern, with the second target pattern and the deflected second pattern being symmetrical about the reference center. During the adjustment of the chip, the chip synchronously drives the first graphic to move, so that the first graphic and the second target graphic have a third offset y2 on the Y-axis and a fourth offset x2 on the X-axis, and the chip and the substrate are parallel.

9. The relative tilt detection device according to claim 2, characterized in that, The reflector is a mirror, which is configured to be rotatably disposed on the side of the optical beam splitter away from the autocollimator, so as to adjust the emission direction of the second beam by the rotation angle of the mirror, and to tilt the emission direction of the second beam relative to the second direction and / or the third direction.

10. The relative tilt detection device according to claim 9, characterized in that, The second pattern includes an initial second pattern and an inclined second pattern. The initial second pattern is defined as the result of the transformation of the second reflected beam formed after the second beam with an un-tilted exit direction is directly projected onto the second detection surface. The inclined second pattern is defined as the result of the transformation of the second reflected beam formed after the second beam with an tilted exit direction is projected onto the second detection surface. The initial second pattern and the inclined second pattern have a fifth offset y3 and a sixth offset x3. The image sensor displays a reference pattern with intersecting X-axis and Y-axis, the intersection of which is the reference center. The image sensor also displays a third target pattern, a tilted second pattern, and the first pattern, with the third target pattern and the tilted second pattern being symmetrical about the reference center. During the adjustment of the chip, the chip synchronously drives the first graphic to move, so that the first graphic and the third target graphic have a fifth offset y3 on the Y-axis and a sixth offset x3 on the X-axis, and the chip and the substrate are parallel.

11. The relative tilt detection device according to claim 1, characterized in that, Both the first and second graphics are crosshair cursors.

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