Falling test method for ceramic balls on wafer heating plate

Abstract

The invention discloses a drop test method for a ceramic ball on a wafer heating plate, and aims to provide a drop test method for a ceramic ball on a wafer heating plate, which can more comprehensively simulate the actual processing condition of a wafer so as to effectively and accurately evaluate the anti-drop performance of the ceramic ball under the comprehensive action of various factors. The method comprises the following steps of: 1, mounting ceramic balls on a wafer heating plate according to a specified layout and quantity; recording the initial position and state of each ceramic ball by using image acquisition equipment; step 2, placing the wafer heating disc in a vibration test device; starting the vibration test equipment, setting the vibration frequency to gradually change from low to high, and monitoring the state of each ceramic ball in real time through the image acquisition equipment in the process; 3, starting temperature control equipment, and controlling the temperature of the wafer heating disc according to a set temperature change curve; in the process, the state of each ceramic ball is monitored in real time through image acquisition equipment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to a method for testing the drop of ceramic balls on a wafer heating plate. Background Technology

[0002] In semiconductor manufacturing, wafer heating pads play a crucial role, maintaining the wafer at a specific temperature environment for processing. Wafer heating pads typically contain ceramic balls, usually embedded in mounting holes on their surface. These ceramic balls support the wafer, ensuring good contact and uniform heat transfer between the wafer and the heating pad. For example, Chinese Patent Publication No. CN203562415U describes an invention entitled "A Novel Wafer Support Device."

[0003] However, during actual wafer fabrication, various factors, such as vibration of the wafer heating plate, thermal stress caused by temperature changes, and operational impacts during wafer placement and removal, can cause ceramic balls to loosen or fall out (for example, vibration can cause ceramic balls to loosen and fall into the mounting holes; or temperature changes can cause the mounting hole diameter to enlarge, leading to the ceramic balls loosening or falling into the mounting holes). Once ceramic balls become loose or fall out, it not only affects the wafer's support stability, causing the wafer to shift during heating and affecting processing accuracy, but it may also damage the wafer surface, resulting in product quality problems and increased production costs.

[0004] Currently, testing methods for detecting ceramic balls falling from wafer heating pads are not yet perfect. Existing methods often only test the static fixation of the ceramic balls, failing to simulate the complex conditions of actual wafer processing and thus unable to accurately assess the drop resistance of the ceramic balls under the combined effects of various factors. Therefore, a new testing method is needed to address these issues. Summary of the Invention

[0005] The purpose of this invention is to provide a method for testing the drop performance of ceramic balls on a wafer heating plate. This method can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance of ceramic balls under the combined effect of various factors. This will improve the stability of wafer processing and product quality, and effectively reduce the production risks and costs caused by ceramic ball drops.

[0006] The technical solution of this invention is: A method for testing the drop of ceramic balls on a wafer heating plate includes the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; The initial position and state of each ceramic ball were recorded using an image acquisition device; Step 2, Vibration Test Place the wafer heating plate in the vibration testing equipment; Start the vibration testing equipment and set the vibration frequency to gradually change from low to high. During this process, the status of each ceramic ball is monitored in real time through the image acquisition equipment. Step 3, Temperature Change Test The temperature control equipment is activated to control the temperature of the wafer heating plate according to the set temperature change curve. During this process, the status of each ceramic ball is monitored in real time using an image acquisition device. In this method for testing the drop of ceramic balls on a wafer heating plate, the vibration test is used to simulate various vibration conditions encountered during actual wafer processing by gradually changing the vibration frequency from low to high. The temperature change test is used to simulate the impact of temperature changes during actual wafer processing. Simultaneously, the status of each ceramic ball is monitored in real time using an image acquisition device. Based on this, the test results can be analyzed according to the information recorded by the image acquisition device. The number and proportion of ceramic balls that loosen or fall under different test conditions (vibration test, temperature change test) can be statistically analyzed. The relationship between the loosening or falling of ceramic balls and factors such as vibration frequency, amplitude, and temperature change can be analyzed to evaluate the effectiveness of current measures to prevent ceramic ball drop under different conditions. Furthermore, by monitoring and recording the state and related parameters of the ceramic balls in real time, the causes of loosening or falling of the ceramic balls can be analyzed in depth. This provides strong data support for improving measures to prevent ceramic ball falls, such as optimizing the installation method of the ceramic balls and adjusting the structural design of the heating plate, to improve the drop resistance of the ceramic balls and help improve the stability and product quality of wafer processing. Therefore, the ceramic ball drop test method on the wafer heating plate proposed in this solution can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance of the ceramic balls under the combined effect of various factors, improving the stability and product quality of wafer processing, and effectively reducing the production risks and costs caused by ceramic ball falls.

[0007] As a preferred option, in step two, the specific steps for starting the vibration testing equipment and setting the vibration frequency to gradually increase from low to high are as follows: The vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t until the vibration frequency reaches f2. The amplitude is set at each vibration frequency as follows, starting from A1mm and increasing by Amm at set time intervals t1 until it reaches A2mm. Based on this, the vibration frequency is gradually varied from low to high during the vibration test, thus more comprehensively simulating various vibration conditions experienced during actual wafer processing. Simultaneously, the state of each ceramic ball is monitored in real time using image acquisition equipment. Based on this, the test results can be analyzed using the information recorded by the image acquisition equipment to analyze the relationship between ceramic ball loosening or falling and factors such as vibration frequency and amplitude, and to evaluate the effectiveness of current measures to prevent ceramic ball falling under different operating conditions.

[0008] As a preferred option, in step two, the specific steps for starting the vibration testing equipment and setting the vibration frequency to gradually increase from low to high are as follows: The amplitude is set to start from A1mm, and the amplitude increases by A mm every set time t until the amplitude reaches A2mm; The vibration frequency is set in each amplitude as follows: starting from f1, the vibration frequency f increases at set time intervals t1 until it reaches f2. Based on this, by setting the vibration frequency to gradually increase from low to high during vibration testing, various vibration conditions encountered during actual wafer processing can be more comprehensively simulated. Simultaneously, the status of each ceramic ball is monitored in real time using image acquisition equipment. Based on this, the test results can be analyzed using the information recorded by the image acquisition equipment to analyze the relationship between ceramic ball loosening or falling and factors such as vibration frequency and amplitude, and to evaluate the effectiveness of current measures to prevent ceramic ball falling under different operating conditions.

[0009] As a preferred option, the specific steps for controlling the temperature of the wafer heating plate according to the set temperature change curve in step three are as follows: First, start heating from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain T degrees Celsius at t2 hours. Next, the temperature is lowered to room temperature at a rate of T2 degrees Celsius per minute. Based on this, a temperature change test is conducted, with the temperature gradually changing from low to high, then maintained at a high temperature for a set time, before gradually cooling to room temperature. This more comprehensively simulates the impact of temperature changes during actual wafer processing. Simultaneously, the status of each ceramic ball is monitored in real time using image acquisition equipment. Based on this, the test results can be analyzed using the information recorded by the image acquisition equipment to analyze the relationship between ceramic ball loosening or falling and temperature change factors, and to evaluate the effectiveness of current measures to prevent ceramic ball falling under different operating conditions.

[0010] As a preferred option, T is set to 200-300 degrees Celsius, T1 to 5-20 degrees Celsius, and t2 to 24-72 hours.

[0011] A method for testing the drop of ceramic balls on a wafer heating plate includes the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; The initial position and state of each ceramic ball were recorded using an image acquisition device; Step 2: Place the wafer heating plate in the vibration testing equipment; Next, a temperature change test is conducted. The temperature control equipment is activated to control the temperature of the wafer heating plate according to the set temperature change curve. Vibration testing was conducted during the temperature change test. The vibration testing equipment was started, and the vibration frequency was set to gradually change from low to high. In step two, the status of each ceramic ball is monitored in real time using an image acquisition device.

[0012] This solution employs a method for testing the drop of ceramic balls on a wafer heating plate. Temperature change testing simulates the effects of temperature variations during actual wafer processing. Simultaneously, vibration testing is conducted during the temperature change test. Vibration testing equipment is activated, and the vibration frequency is gradually increased from low to high to simulate various vibration conditions encountered during actual wafer processing. This provides a more comprehensive and rigorous simulation of actual wafer processing conditions. Furthermore, image acquisition equipment monitors the state of each ceramic ball in real time. Based on this, the test results can be analyzed using the information recorded by the image acquisition equipment. The number and proportion of ceramic balls that loosen or fall under different test conditions (vibration test, temperature change test) can be statistically analyzed. The relationship between ceramic ball loosening or falling and factors such as vibration frequency, amplitude, and temperature changes can be analyzed to evaluate the effectiveness of current measures to prevent ceramic ball falling under different conditions. Furthermore, by monitoring and recording the state and related parameters of the ceramic balls in real time, the causes of loosening or falling of the ceramic balls can be analyzed in depth. This provides strong data support for improving measures to prevent ceramic ball falls, such as optimizing the installation method of the ceramic balls and adjusting the structural design of the heating plate, to improve the drop resistance of the ceramic balls and help improve the stability and product quality of wafer processing. Therefore, the ceramic ball drop test method on the wafer heating plate proposed in this solution can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance of the ceramic balls under the combined effect of various factors, improving the stability and product quality of wafer processing, and effectively reducing the production risks and costs caused by ceramic ball falls.

[0013] As a preferred option, the temperature change test in step two involves controlling the temperature of the wafer heating plate according to a set temperature change curve. The specific steps are as follows: First, start heating from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain T degrees Celsius at t2 hours. Next, the temperature is lowered to room temperature at a rate of T2 degrees Celsius per minute. Based on this, a temperature change test is conducted, with the temperature gradually changing from low to high, then maintained at a high temperature for a set time, before gradually cooling to room temperature. This more comprehensively simulates the impact of temperature changes during actual wafer processing. Simultaneously, the status of each ceramic ball is monitored in real time using image acquisition equipment. Based on this, the test results can be analyzed using the information recorded by the image acquisition equipment to analyze the relationship between ceramic ball loosening or falling and temperature change factors, and to evaluate the effectiveness of current measures to prevent ceramic ball falling under different operating conditions.

[0014] As a preferred option, the vibration test in step two, including starting the vibration testing equipment and setting the vibration frequency to gradually increase, follows these specific steps: When the temperature of the wafer heating pad rises to T degrees Celsius, the vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t until the vibration frequency reaches f2. The amplitude is set for each vibration frequency as follows, starting from A1mm and increasing by Amm at set time intervals t1 until it reaches A2mm. Based on this, vibration tests are conducted under conditions where the wafer heating plate is heated to its maximum temperature. The vibration frequency is set to gradually increase from low to high to simulate various vibration conditions experienced during wafer processing under high-temperature and stringent conditions. Simultaneously, the status of each ceramic ball is monitored in real time using image acquisition equipment. Based on this, the test results can be analyzed using the information recorded by the image acquisition equipment to analyze the relationship between the loosening or falling of ceramic balls under high-temperature and stringent conditions and factors such as vibration frequency and amplitude, and to evaluate the effectiveness of current measures to prevent ceramic ball falling under different conditions.

[0015] As a preferred option, the vibration test in step two, including starting the vibration testing equipment and setting the vibration frequency to gradually increase, follows these specific steps: When the temperature of the wafer heating pad rises to T degrees Celsius, the amplitude is set to start from A1 mm and increase by A mm every set time t until the amplitude reaches A2 mm; The vibration frequency is set in each amplitude as follows: starting from f1, the vibration frequency f increases at set time intervals t1 until it reaches f2. Based on this, vibration tests are conducted under the condition that the temperature of the wafer heating plate is raised to the maximum temperature. The vibration frequency is set to gradually change from low to high to simulate various vibration conditions encountered during wafer processing under high-temperature and stringent conditions. At the same time, the status of each ceramic ball is monitored in real time using image acquisition equipment. Based on this, the test results can be analyzed according to the information recorded by the image acquisition equipment. The relationship between the loosening or falling of ceramic balls under high-temperature and stringent conditions and factors such as vibration frequency and amplitude can be analyzed to evaluate the effectiveness of current measures to prevent ceramic balls from falling under different conditions.

[0016] As a preferred option, the vibration test in step two, including starting the vibration testing equipment and setting the vibration frequency to gradually increase, follows these specific steps: During the process of the wafer heating pad temperature rising from room temperature to T degrees Celsius The vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t3 until the vibration frequency reaches f2; When the temperature of the wafer heating pad rises to T degrees Celsius, the vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t until the vibration frequency reaches f2. The amplitude is set at each vibration frequency as follows, starting from A1mm and increasing by Amm at set time intervals t1 until it reaches A2mm. This scheme simulates various vibration conditions experienced by wafers during processing at different temperature ranges by conducting vibration tests as the temperature of the wafer heating plate rises from room temperature to T degrees Celsius, with the vibration frequency gradually increasing from low to high. Furthermore, vibration tests are conducted at the highest temperature of the wafer heating plate, with the vibration frequency gradually increasing from low to high, simulating various vibration conditions experienced by wafers during processing under high-temperature and stringent conditions. Simultaneously, the state of each ceramic ball is monitored in real-time using image acquisition equipment. Based on this, the test results can be analyzed using the information recorded by the image acquisition equipment to analyze the relationship between the loosening or falling of ceramic balls within various temperature ranges and under high-temperature and stringent conditions and factors such as vibration frequency and amplitude, evaluating the effectiveness of current measures to prevent ceramic ball falling under different conditions.

[0017] The beneficial effects of this invention are as follows: By setting the vibration frequency to gradually change from low to high in the vibration test, various vibration conditions encountered during actual wafer processing are simulated; by using temperature change testing, the impact of temperature changes during actual wafer processing is simulated; and by using image acquisition equipment to monitor the state of each ceramic ball in real time, the test results can be analyzed based on the information recorded by the image acquisition equipment. The number and proportion of ceramic balls that loosen or fall under different test conditions (vibration test, temperature change test) can be statistically analyzed, and the relationship between ceramic ball loosening or falling and factors such as vibration frequency, amplitude, and temperature change can be analyzed to evaluate the effectiveness of current measures to prevent ceramic ball falling under different conditions. Furthermore, by monitoring and recording the state of the ceramic balls and related parameters in real time and in detail, the causes of ceramic ball loosening or falling can be analyzed in depth, providing strong data support for improving measures to prevent ceramic ball falling, such as optimizing the installation method of ceramic balls and adjusting the structural design of the heating plate, to improve the anti-fall performance of ceramic balls, which helps to improve the stability of wafer processing and product quality. Therefore, it can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance performance of ceramic balls under the combined effect of various factors, so as to improve the stability of wafer processing and product quality, and effectively reduce the production risks and costs caused by ceramic ball drops. Detailed Implementation

[0018] Specific embodiment one, a method for testing the drop of ceramic balls on a wafer heating plate, includes the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; Initial state recording involves using an image acquisition device to record the initial position and state of each ceramic ball. Specifically, the image acquisition device is used to photograph the initial state of the wafer heating plate, recording the initial position and state of the ceramic balls. The image acquisition device can be an existing camera, such as a high-speed camera.

[0019] Step 2, Vibration Test Place the wafer heating plate in the vibration testing equipment.

[0020] Start the vibration testing equipment and set the vibration frequency to gradually increase from low to high. Specifically, set the vibration frequency to start from f1 and increase the vibration frequency f every set time t until the vibration frequency reaches f2, and then maintain it for the set time t.

[0021] The amplitude is set for each vibration frequency as follows: the amplitude starts from A1mm and increases by Amm at set time intervals t1 until the amplitude reaches A2mm. Then, the amplitude is maintained at A2mm until the corresponding vibration frequency ends.

[0022] During the vibration test, the status of each ceramic ball is monitored in real time using image acquisition equipment.

[0023] in: The value of f1 ranges from 5 to 20 Hz, and in this embodiment, the value of f1 is 10 Hz.

[0024] The value of f is 5-10Hz, and in this embodiment, the value of f is 5Hz.

[0025] f2 takes a value of 50-80Hz, and in this embodiment, f takes a value of 50Hz.

[0026] The value of A1 is 0.1-0.2 mm, and in this embodiment, the value of A1 is 0.1 mm.

[0027] The value of A is 0.02-0.06 mm, and in this embodiment, the value of A1 is 0.05 mm.

[0028] The value of A2 is 0.4-0.8 mm, and the value of A1 in this embodiment is 0.5 mm.

[0029] t is set to 30 minutes.

[0030] t1 is set to 3 minutes.

[0031] Step 3, Temperature Change Test (In this embodiment, the temperature change test is performed after the vibration test is completed) The temperature control equipment is activated to control the temperature of the wafer heating plate according to the set temperature change curve; specifically, First, raise the temperature from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain the temperature at T degrees Celsius for t2 hours.

[0032] Next, it is cooled to room temperature at a rate of T2 degrees Celsius per minute.

[0033] During the temperature change test, the status of each ceramic ball is monitored in real time using image acquisition equipment.

[0034] in: Room temperature refers to 25 degrees Celsius.

[0035] The value of T is between 200 and 300 degrees Celsius, and in this embodiment, the value of T is 250 degrees Celsius.

[0036] T1 is set to a value of 5-20 degrees Celsius per minute, and in this embodiment, T1 is set to 10 degrees Celsius per minute.

[0037] The value of t2 is 24-72 hours, and in this embodiment, the value of t2 is 48 hours.

[0038] In this embodiment, a method for testing the drop of ceramic balls on a wafer heating plate is used. The vibration test involves gradually increasing the vibration frequency from low to high to comprehensively simulate various vibration conditions encountered during actual wafer processing. A temperature change test is used to simulate the impact of temperature variations during actual wafer processing. Simultaneously, an image acquisition device monitors the state of each ceramic ball in real time. Based on this, the test results can be analyzed to statistically determine the number and proportion of ceramic balls that loosen or fall under different test conditions (vibration test, temperature change test). The relationship between ceramic ball loosening or falling and factors such as vibration frequency, amplitude, and temperature changes can be analyzed to evaluate the effectiveness of current measures to prevent ceramic ball falling under different conditions. Furthermore, by monitoring and recording the state and related parameters of the ceramic balls in real time, the causes of ceramic ball loosening or falling can be analyzed in depth, providing strong data support for improving measures to prevent ceramic ball falling, such as optimizing the installation method of the ceramic balls and adjusting the structural design of the heating plate, to improve the drop resistance of the ceramic balls and contribute to improving the stability of wafer processing and product quality. Therefore, the ceramic ball drop test method on the wafer heating plate proposed in this solution can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance performance of the ceramic ball under the combined effect of various factors, so as to improve the stability of wafer processing and product quality, and effectively reduce the production risks and costs caused by ceramic ball drops.

[0039] Specific embodiment two, a method for testing the drop of ceramic balls on a wafer heating plate, includes the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; Initial state recording involves using an image acquisition device to record the initial position and state of each ceramic ball. Specifically, the image acquisition device is used to photograph the initial state of the wafer heating plate, recording the initial position and state of the ceramic balls. The image acquisition device can be an existing camera, such as a high-speed camera.

[0040] Step 2, Vibration Test Place the wafer heating plate in the vibration testing equipment.

[0041] Start the vibration testing equipment and set the vibration frequency to gradually increase from low to high; specifically, set the amplitude to start from A1mm, and increase the amplitude by A mm every set time t until the amplitude reaches A2mm, and then maintain it for the set time t.

[0042] The vibration frequency is set in each amplitude as follows: the vibration frequency starts from f1 and increases by f at set time intervals t1 until the vibration frequency reaches f2. Then, the vibration frequency f2 is maintained until the corresponding amplitude ends.

[0043] During the vibration test, the status of each ceramic ball is monitored in real time using image acquisition equipment.

[0044] in: The value of A1 is 0.1-0.2 mm, and in this embodiment, the value of A1 is 0.1 mm.

[0045] The value of A is 0.02-0.06 mm, and in this embodiment, the value of A1 is 0.05 mm.

[0046] The value of A2 is 0.4-0.8 mm, and the value of A1 in this embodiment is 0.5 mm.

[0047] The value of f1 ranges from 5 to 20 Hz, and in this embodiment, the value of f1 is 10 Hz.

[0048] The value of f is 5-10Hz, and in this embodiment, the value of f is 5Hz.

[0049] f2 takes a value of 50-80Hz, and in this embodiment, f takes a value of 50Hz.

[0050] t is set to 30 minutes.

[0051] t1 is set to 3 minutes.

[0052] Step 3, Temperature Change Test (In this embodiment, the temperature change test is performed after the vibration test is completed) The temperature control equipment is activated to control the temperature of the wafer heating plate according to the set temperature change curve; specifically, First, raise the temperature from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain the temperature at T degrees Celsius for t2 hours.

[0053] Next, it is cooled to room temperature at a rate of T2 degrees Celsius per minute.

[0054] During the temperature change test, the status of each ceramic ball is monitored in real time using image acquisition equipment.

[0055] in: Room temperature refers to 25 degrees Celsius.

[0056] The value of T is between 200 and 300 degrees Celsius, and in this embodiment, the value of T is 250 degrees Celsius.

[0057] T1 is set to a value of 5-20 degrees Celsius per minute, and in this embodiment, T1 is set to 10 degrees Celsius per minute.

[0058] The value of t2 is 24-72 hours, and in this embodiment, the value of t2 is 48 hours.

[0059] In this embodiment, a method for testing the drop of ceramic balls on a wafer heating plate is used. The vibration test involves gradually increasing the vibration frequency from low to high to comprehensively simulate various vibration conditions encountered during actual wafer processing. A temperature change test is used to simulate the impact of temperature variations during actual wafer processing. Simultaneously, an image acquisition device monitors the state of each ceramic ball in real time. Based on this, the test results can be analyzed to statistically determine the number and proportion of ceramic balls that loosen or fall under different test conditions (vibration test, temperature change test). The relationship between ceramic ball loosening or falling and factors such as vibration frequency, amplitude, and temperature changes can be analyzed to evaluate the effectiveness of current measures to prevent ceramic ball falling under different conditions. Furthermore, by monitoring and recording the state and related parameters of the ceramic balls in real time, the causes of ceramic ball loosening or falling can be analyzed in depth, providing strong data support for improving measures to prevent ceramic ball falling, such as optimizing the installation method of the ceramic balls and adjusting the structural design of the heating plate, to improve the drop resistance of the ceramic balls and contribute to improving the stability of wafer processing and product quality. Therefore, the ceramic ball drop test method on the wafer heating plate proposed in this solution can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance performance of the ceramic ball under the combined effect of various factors, so as to improve the stability of wafer processing and product quality, and effectively reduce the production risks and costs caused by ceramic ball drops.

[0060] Specific embodiment three: A method for testing the drop of ceramic balls on a wafer heating plate, comprising the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; Initial state recording involves using an image acquisition device to record the initial position and state of each ceramic ball. Specifically, the image acquisition device is used to photograph the initial state of the wafer heating plate, recording the initial position and state of the ceramic balls. The image acquisition device can be an existing camera, such as a high-speed camera.

[0061] Step 2: Place the wafer heating plate in the vibration testing equipment; Next, a temperature change test is conducted. The temperature control equipment is activated, and the temperature of the wafer heating plate is controlled according to the set temperature change curve; specifically, First, start heating from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain T degrees Celsius at t2 hours. Next, it is cooled to room temperature at a rate of T2 degrees Celsius per minute.

[0062] in: Room temperature refers to 25 degrees Celsius.

[0063] The value of T is between 200 and 300 degrees Celsius, and in this embodiment, the value of T is 250 degrees Celsius.

[0064] T1 is set to a value of 5-20 degrees Celsius per minute, and in this embodiment, T1 is set to 10 degrees Celsius per minute.

[0065] The value of t2 is 24-72 hours, and in this embodiment, the value of t2 is 48 hours.

[0066] Vibration testing was conducted during the temperature change test. The vibration testing equipment was started, and the vibration frequency was set to gradually increase from low to high. Specifically, When the temperature of the wafer heating pad rises to T degrees Celsius, the vibration frequency is set to start from f1, and the vibration frequency f is increased at set time intervals t until the vibration frequency reaches f2. Then, the vibration frequency f2 is maintained until the wafer heating pad begins to cool down.

[0067] The amplitude is set for each vibration frequency as follows: the amplitude starts from A1mm and increases by Amm at set time intervals t1 until the amplitude reaches A2mm. Then, the amplitude is maintained at A2mm until the corresponding vibration frequency ends.

[0068] in: The value of f1 ranges from 5 to 20 Hz, and in this embodiment, the value of f1 is 10 Hz.

[0069] The value of f is 5-10Hz, and in this embodiment, the value of f is 5Hz.

[0070] f2 takes a value of 50-80Hz, and in this embodiment, f takes a value of 50Hz.

[0071] The value of A1 is 0.1-0.2 mm, and in this embodiment, the value of A1 is 0.1 mm.

[0072] The value of A is 0.02-0.06 mm, and in this embodiment, the value of A1 is 0.05 mm.

[0073] The value of A2 is 0.4-0.8 mm, and the value of A1 in this embodiment is 0.5 mm.

[0074] t is set to 30 minutes.

[0075] t1 is set to 3 minutes.

[0076] In step two, the status of each ceramic ball is monitored in real time using an image acquisition device.

[0077] In this embodiment, a method for testing the drop of ceramic balls on a wafer heating plate is used to simulate the effects of temperature changes during actual wafer processing through temperature variation testing. Simultaneously, vibration testing is conducted under conditions where the wafer heating plate is heated to its maximum temperature. The vibration frequency is set to gradually increase from low to high, thus simulating various vibration conditions experienced during wafer processing under stringent high-temperature conditions. Furthermore, the state of each ceramic ball is monitored in real-time using an image acquisition device. Based on this, the test results can be analyzed using the information recorded by the image acquisition device. The number and proportion of ceramic balls that loosen or fall under different test conditions (vibration test, temperature variation test) can be statistically analyzed. The relationship between ceramic ball loosening or falling and factors such as vibration frequency, amplitude, and temperature changes can be analyzed to evaluate the effectiveness of current measures to prevent ceramic ball falling under different conditions. Furthermore, by monitoring and recording the state and related parameters of the ceramic balls in real time, the causes of loosening or falling of the ceramic balls can be analyzed in depth. This provides strong data support for improving measures to prevent ceramic ball falls, such as optimizing the installation method of the ceramic balls and adjusting the structural design of the heating plate, to improve the drop resistance of the ceramic balls and help improve the stability and product quality of wafer processing. Therefore, the ceramic ball drop test method on the wafer heating plate proposed in this solution can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance of the ceramic balls under the combined effect of various factors, improving the stability and product quality of wafer processing, and effectively reducing the production risks and costs caused by ceramic ball falls.

[0078] Specific embodiment four: A method for testing the drop of ceramic balls on a wafer heating plate, comprising the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; Initial state recording involves using an image acquisition device to record the initial position and state of each ceramic ball. Specifically, the image acquisition device is used to photograph the initial state of the wafer heating plate, recording the initial position and state of the ceramic balls. The image acquisition device can be an existing camera, such as a high-speed camera.

[0079] Step 2: Place the wafer heating plate in the vibration testing equipment; Next, a temperature change test is conducted. The temperature control equipment is activated, and the temperature of the wafer heating plate is controlled according to the set temperature change curve; specifically, First, start heating from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain T degrees Celsius at t2 hours. Next, it is cooled to room temperature at a rate of T2 degrees Celsius per minute.

[0080] in: Room temperature refers to 25 degrees Celsius.

[0081] The value of T is between 200 and 300 degrees Celsius, and in this embodiment, the value of T is 250 degrees Celsius.

[0082] T1 is set to a value of 5-20 degrees Celsius per minute, and in this embodiment, T1 is set to 10 degrees Celsius per minute.

[0083] The value of t2 is 24-72 hours, and in this embodiment, the value of t2 is 48 hours.

[0084] Vibration testing was conducted during the temperature change test. The vibration testing equipment was started, and the vibration frequency was set to gradually increase from low to high. Specifically, When the temperature of the wafer heating pad rises to T degrees Celsius, the amplitude is set to start from A1mm and increase by A mm at set time intervals t until the amplitude reaches A2mm. Then, the amplitude A2mm is maintained and vibrated until the wafer heating pad begins to cool down.

[0085] The vibration frequency is set in each amplitude as follows: the vibration frequency starts from f1 and increases by f at set time intervals t1 until the vibration frequency reaches f2. Then, the vibration frequency f2 is maintained until the corresponding amplitude ends.

[0086] in: The value of A1 is 0.1-0.2 mm, and in this embodiment, the value of A1 is 0.1 mm.

[0087] The value of A is 0.02-0.06 mm, and in this embodiment, the value of A1 is 0.05 mm.

[0088] The value of A2 is 0.4-0.8 mm, and the value of A1 in this embodiment is 0.5 mm.

[0089] The value of f1 ranges from 5 to 20 Hz, and in this embodiment, the value of f1 is 10 Hz.

[0090] The value of f is 5-10Hz, and in this embodiment, the value of f is 5Hz.

[0091] f2 takes a value of 50-80Hz, and in this embodiment, f takes a value of 50Hz.

[0092] t is set to 30 minutes.

[0093] t1 is set to 3 minutes.

[0094] In step two, the status of each ceramic ball is monitored in real time using an image acquisition device.

[0095] In this embodiment, a method for testing the drop of ceramic balls on a wafer heating plate is used to simulate the effects of temperature changes during actual wafer processing through temperature variation testing. Simultaneously, vibration testing is conducted under conditions where the wafer heating plate is heated to its maximum temperature. The vibration frequency is set to gradually increase from low to high, thus simulating various vibration conditions experienced during wafer processing under stringent high-temperature conditions. Furthermore, the state of each ceramic ball is monitored in real-time using an image acquisition device. Based on this, the test results can be analyzed using the information recorded by the image acquisition device. The number and proportion of ceramic balls that loosen or fall under different test conditions (vibration test, temperature variation test) can be statistically analyzed. The relationship between ceramic ball loosening or falling and factors such as vibration frequency, amplitude, and temperature changes can be analyzed to evaluate the effectiveness of current measures to prevent ceramic ball falling under different conditions. Furthermore, by monitoring and recording the state and related parameters of the ceramic balls in real time, the causes of loosening or falling of the ceramic balls can be analyzed in depth. This provides strong data support for improving measures to prevent ceramic ball falls, such as optimizing the installation method of the ceramic balls and adjusting the structural design of the heating plate, to improve the drop resistance of the ceramic balls and help improve the stability and product quality of wafer processing. Therefore, the ceramic ball drop test method on the wafer heating plate proposed in this solution can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance of the ceramic balls under the combined effect of various factors, improving the stability and product quality of wafer processing, and effectively reducing the production risks and costs caused by ceramic ball falls.

[0096] Specific embodiment five: A method for testing the drop of ceramic balls on a wafer heating plate, comprising the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; Initial state recording involves using an image acquisition device to record the initial position and state of each ceramic ball. Specifically, the image acquisition device is used to photograph the initial state of the wafer heating plate, recording the initial position and state of the ceramic balls. The image acquisition device can be an existing camera, such as a high-speed camera.

[0097] Step 2: Place the wafer heating plate in the vibration testing equipment; Next, a temperature change test is conducted. The temperature control equipment is activated, and the temperature of the wafer heating plate is controlled according to the set temperature change curve; specifically, First, start heating from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain T degrees Celsius at t2 hours. Next, it is cooled to room temperature at a rate of T2 degrees Celsius per minute.

[0098] Vibration testing was conducted during the temperature change test. The vibration testing equipment was started, and the vibration frequency was set to gradually increase from low to high. Specifically, During the process of the wafer heating pad temperature rising from room temperature to T degrees Celsius The vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t3 until the vibration frequency reaches f2. Then, the vibration frequency f2 is maintained until the temperature of the wafer heating plate rises to T degrees Celsius.

[0099] When the temperature of the wafer heating pad rises to T degrees Celsius, the vibration frequency is set to start from f1, and the vibration frequency f is increased at set time intervals t until the vibration frequency reaches f2. Then, the vibration frequency f2 is maintained until the wafer heating pad begins to cool down.

[0100] The amplitude is set for each vibration frequency as follows: the amplitude starts from A1mm and increases by Amm at set time intervals t1 until the amplitude reaches A2mm. Then, the amplitude is maintained at A2mm until the corresponding vibration frequency ends.

[0101] in: Room temperature refers to 25 degrees Celsius.

[0102] The value of T is between 200 and 300 degrees Celsius, and in this embodiment, the value of T is 250 degrees Celsius.

[0103] T1 is set to a value of 5-20 degrees Celsius per minute, and in this embodiment, T1 is set to 10 degrees Celsius per minute.

[0104] The value of t2 is 24-72 hours, and in this embodiment, the value of t2 is 48 hours.

[0105] The value of f1 ranges from 5 to 20 Hz, and in this embodiment, the value of f1 is 10 Hz.

[0106] The value of f is 5-10Hz, and in this embodiment, the value of f is 5Hz.

[0107] f2 takes a value of 50-80Hz, and in this embodiment, f takes a value of 50Hz.

[0108] The value of A1 is 0.1-0.2 mm, and in this embodiment, the value of A1 is 0.1 mm.

[0109] The value of A is 0.02-0.06 mm, and in this embodiment, the value of A1 is 0.05 mm.

[0110] The value of A2 is 0.4-0.8 mm, and the value of A1 in this embodiment is 0.5 mm.

[0111] t is set to 30 minutes.

[0112] t1 is set to 3 minutes.

[0113] t3 is set to 2 minutes.

[0114] In step two, the status of each ceramic ball is monitored in real time using an image acquisition device.

[0115] In this embodiment, a method for testing the drop of ceramic balls on a wafer heating plate is used to simulate the effects of temperature changes during actual wafer processing through temperature variation testing. Simultaneously, vibration testing is conducted under conditions where the wafer heating plate is heated to its maximum temperature. The vibration frequency is set to gradually increase from low to high, thus simulating various vibration conditions experienced during wafer processing under stringent high-temperature conditions. Furthermore, the state of each ceramic ball is monitored in real-time using an image acquisition device. Based on this, the test results can be analyzed using the information recorded by the image acquisition device. The number and proportion of ceramic balls that loosen or fall under different test conditions (vibration test, temperature variation test) can be statistically analyzed. The relationship between ceramic ball loosening or falling and factors such as vibration frequency, amplitude, and temperature changes can be analyzed to evaluate the effectiveness of current measures to prevent ceramic ball falling under different conditions. Furthermore, by monitoring and recording the state and related parameters of the ceramic balls in real time, the causes of loosening or falling of the ceramic balls can be analyzed in depth. This provides strong data support for improving measures to prevent ceramic ball falls, such as optimizing the installation method of the ceramic balls and adjusting the structural design of the heating plate, to improve the drop resistance of the ceramic balls and help improve the stability and product quality of wafer processing. Therefore, the ceramic ball drop test method on the wafer heating plate proposed in this solution can more comprehensively simulate the actual wafer processing conditions, thereby effectively and accurately evaluating the drop resistance of the ceramic balls under the combined effect of various factors, improving the stability and product quality of wafer processing, and effectively reducing the production risks and costs caused by ceramic ball falls.

[0116] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any simple modifications, alterations, and equivalent transformations made to the above embodiments based on the technical essence of the present invention shall still fall within the protection scope of the present invention.

Claims

1. A method for testing the drop of ceramic balls on a wafer heating plate, characterized in that, Includes the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; The initial position and state of each ceramic ball were recorded using an image acquisition device; Step 2, Vibration Test Place the wafer heating plate in the vibration testing equipment; Start the vibration testing equipment and set the vibration frequency to gradually change from low to high. During this process, the status of each ceramic ball is monitored in real time through the image acquisition equipment. Step 3, Temperature Change Test The temperature control equipment is activated to control the temperature of the wafer heating plate according to the set temperature change curve; during this process, the status of each ceramic ball is monitored in real time through image acquisition equipment.

2. The method for testing the drop of ceramic balls on a wafer heating plate according to claim 1, characterized in that, In step two, the specific steps for starting the vibration testing equipment and setting the vibration frequency to gradually increase from low to high are as follows: The vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t until the vibration frequency reaches f2. The amplitude is set for each vibration frequency as follows: the amplitude starts at A1mm and increases by A mm at set time intervals t1 until the amplitude reaches A2mm.

3. The method for testing the drop of ceramic balls on a wafer heating plate according to claim 1, characterized in that, In step two, the specific steps for starting the vibration testing equipment and setting the vibration frequency to gradually increase from low to high are as follows: The amplitude is set to start from A1mm, and the amplitude increases by A mm every set time t until the amplitude reaches A2mm; The vibration frequency is set in each amplitude as follows: the vibration frequency starts from f1 and increases by f at set time intervals t1 until the vibration frequency reaches f2.

4. A method for testing the drop of ceramic balls on a wafer heating plate according to claim 1, 2, or 3, characterized in that, In step three, the specific steps for controlling the temperature of the wafer heating plate according to the set temperature change curve are as follows: First, start heating from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain T degrees Celsius at t2 hours. Next, it is cooled to room temperature at a rate of T2 degrees Celsius per minute.

5. The method for testing the drop of ceramic balls on a wafer heating plate according to claim 4, characterized in that, The value of T is 200-300 degrees Celsius, the value of T1 is 5-20 degrees Celsius, and the value of t2 is 24-72 hours.

6. A method for testing the drop of ceramic balls on a wafer heating plate, characterized in that, Includes the following steps: Step 1: Install ceramic balls on the wafer heating plate according to the specified layout and quantity; The initial position and state of each ceramic ball were recorded using an image acquisition device; Step 2: Place the wafer heating plate in the vibration testing equipment; Next, a temperature change test is conducted. The temperature control equipment is activated to control the temperature of the wafer heating plate according to the set temperature change curve. Vibration testing was conducted during the temperature change test. The vibration testing equipment was started, and the vibration frequency was set to gradually change from low to high. In step two, the status of each ceramic ball is monitored in real time using an image acquisition device.

7. The method for testing the drop of ceramic balls on a wafer heating plate according to claim 6, characterized in that, The specific steps for controlling the temperature of the wafer heating plate according to the set temperature change curve in step two are as follows: First, start heating from room temperature to T degrees Celsius at a rate of T1 degrees Celsius per minute; then maintain T degrees Celsius at t2 hours. Next, it is cooled to room temperature at a rate of T2 degrees Celsius per minute.

8. The method for testing the drop of ceramic balls on a wafer heating plate according to claim 7, characterized in that, The specific steps for the vibration test in step two, including starting the vibration testing equipment and setting the vibration frequency to gradually increase from low to high, are as follows: When the temperature of the wafer heating pad rises to T degrees Celsius, the vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t until the vibration frequency reaches f2. The amplitude is set for each vibration frequency as follows: the amplitude starts at A1mm and increases by A mm at set time intervals t1 until the amplitude reaches A2mm.

9. The method for testing the drop of ceramic balls on a wafer heating plate according to claim 7, characterized in that, The specific steps for the vibration test in step two, including starting the vibration testing equipment and setting the vibration frequency to gradually increase from low to high, are as follows: When the temperature of the wafer heating pad rises to T degrees Celsius, the amplitude is set to start from A1 mm and increase by A mm every set time t until the amplitude reaches A2 mm; The vibration frequency is set in each amplitude as follows: the vibration frequency starts from f1 and increases by f at set time intervals t1 until the vibration frequency reaches f2.

10. The method for testing the drop of ceramic balls on a wafer heating plate according to claim 7, characterized in that, The specific steps for the vibration test in step two, including starting the vibration testing equipment and setting the vibration frequency to gradually increase from low to high, are as follows: During the process of the wafer heating pad temperature rising from room temperature to T degrees Celsius The vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t3 until the vibration frequency reaches f2; When the temperature of the wafer heating pad rises to T degrees Celsius, the vibration frequency is set to start from f1, and the vibration frequency f is increased every set time t until the vibration frequency reaches f2. The amplitude is set for each vibration frequency as follows: the amplitude starts at A1mm and increases by A mm at set time intervals t1 until the amplitude reaches A2mm.