Organic electrochemical biomimetic synapse device based on two-end vertical structure, preparation method thereof and biomimetic neural morphological chip

Abstract

The application discloses a two-end vertical structure organic electrochemical biomimetic synapse device and a preparation method and a biomimetic neural morphological chip thereof. The device comprises a bottom electrode, a first organic mixed ion-electron conductor layer, a first ion gel layer and a top electrode which are sequentially stacked. The first ion gel layer is configured to provide anions. The first organic mixed ion-electron conductor layer is configured to transport anions and electrons. The top electrode is configured to apply a bias voltage to drive the migration of anions. In terms of structure, the four-layer stacked structure realizes ion path innovation, and the vertical channel sharply reduces the delay time to the microsecond level. In terms of device mechanism, the low reduction potential of the organic ion-electron mixed conductor and the depletion of the de-doped carriers are utilized, the current spontaneously reverses under the action of a certain voltage, and the simulation of artificial synapse sensitization and habituation is realized at the single device level.

Description

Technical Field

[0001] This invention relates to the field of computing device technology, and in particular to an organic electrochemical biomimetic synapse device based on a vertical structure at both ends, its preparation method, and a biomimetic neuromorphic chip. Background Technology

[0002] Current advancements in neuromorphic computing urgently require the simulation of dynamic plasticity in biological synapses at the hardware level. The synaptic sensitization-habituation synergistic mechanism is crucial for achieving adaptive intelligence. For example, in retinal neural circuits, brief periods of intense light trigger sensitization, while continuous illumination induces habituation. This dynamic balance enables the visual system to efficiently handle complex lighting environments. However, existing hardware solutions face three fundamental challenges.

[0003] Firstly, traditional complementary metal-oxide-semiconductor (CMOS) devices struggle to achieve low-power, flexible, and biocompatible synaptic simulation. While silicon-based synaptic circuits can achieve nanosecond-level responses, the in-memory separation characteristic based on the von Neumann architecture results in a single synaptic event consuming up to 100 nJ, which is 10 times that of biological synapses. 4 Firstly, most existing organic electrochemical transistors employ lateral structures. While lateral structures offer advantages in ion-electron coupling, their micrometer-scale channel lengths significantly delay ion migration, reaching over 100 microseconds. This delay far exceeds the biological synaptic response threshold, causing them to fail in real-time tasks such as motion prediction. Secondly, existing synaptic devices largely rely on monotonic conductance changes, failing to reproduce the non-monotonic dynamics of synaptic sensitization-habituation. This often necessitates additional inhibitory circuitry to simulate habituation, increasing the cell area by 2-3 times.

[0004] Traditional lateral organic electrochemical transistors (OECTs) have delay times exceeding 100 μs due to ion migration distances exceeding 50 μm, making them unsuitable for the microsecond or even nanosecond-level dynamics of biological synapses. At the physical mechanism level, monotonic conductance changes cannot reproduce the non-monotonic oscillations of synaptic sensitization and habituation. At the architectural level, the in-memory computing separation characteristic of the von Neumann architecture locks the energy efficiency ratio below 1 TOPS / W (TOPS stands for Tera Operations Per Second, used to measure how many trillion operations a processor can perform at 1W power consumption), while neuromorphic integrated sensing and computing solutions hold the potential for breakthroughs exceeding 100 TOPS / W. In summary, the long-range ion diffusion and single response mode of existing synaptic devices constitute the core obstacles.

[0005] Therefore, existing technologies still need improvement and development. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to provide an organic electrochemical biomimetic synaptic device based on a vertical structure at both ends, its preparation method, and a biomimetic neuromorphic chip, in order to address the above-mentioned deficiencies of the prior art, and to solve the problems of long-range ion diffusion and single response mode in the prior art synaptic devices.

[0007] The technical solution adopted by this invention to solve the technical problem is as follows:

[0008] An organic electrochemical biomimetic synapse device based on a vertically aligned structure at both ends, comprising:

[0009] The bottom electrode, the first organic mixed ion-electron conductor layer, the first ion gel layer, and the top electrode are stacked sequentially.

[0010] The first ionogel layer is configured to provide anions;

[0011] The first organic mixed ionic electron conductor layer is configured to transport anions and electrons;

[0012] The top electrode is configured to apply a bias voltage to drive anion migration.

[0013] The organic electrochemical biomimetic synapse device based on a vertical structure at both ends, wherein the first organic mixed ion-electron conductor layer is made of an organic mixed ion-electron conductor, and the organic mixed ion-electron conductor is selected from at least one of P(g2T-TT), P(gPyDPP-T2), and P(gTDPPT);

[0014] The first ionogel layer is made of ionic liquid and PVDF-HFP, wherein the ionic liquid is selected from at least one of [EMIM][TFSI], BMIM:PF6, and TBA-TFSI.

[0015] The organic electrochemical biomimetic synapse device based on a vertical structure at both ends, wherein the thickness of the first organic mixed ion-electron conductor layer is 50 nm to 250 nm;

[0016] The thickness of the first ionogel layer is 50nm~250nm.

[0017] The organic electrochemical biomimetic synapse device based on a vertical structure at both ends, wherein the bottom electrode is selected from at least one of graphene flexible electrode layer, silver nanowire flexible electrode layer, and ITO electrode layer; the thickness of the bottom electrode is 50 nm to 200 nm.

[0018] The top electrode is an Au / Cr electrode layer, wherein the thickness of the Au layer is 20nm~80nm and the thickness of the Cr layer is 5nm~15nm.

[0019] The aforementioned organic electrochemical biomimetic synapse device based on a vertical structure at both ends has a response time of less than 5ms and a cycle count of greater than 10. 4 Second-rate.

[0020] The organic electrochemical biomimetic synapse device based on a vertical structure at both ends further includes: a dielectric layer;

[0021] The dielectric layer is located between the first organic mixed ionic electronic conductor layer and the first ionic gel layer.

[0022] A biomimetic neuromorphic chip, comprising: a plurality of devices arranged in a cross array, wherein the devices employ organic electrochemical biomimetic synaptic devices based on a vertical structure at both ends as described in any of the above claims;

[0023] The bottom electrode of each device is connected to an independent word line, and the top electrode of each device is connected to a shared bit line.

[0024] A method for fabricating an organic electrochemical biomimetic synaptic device based on a vertically structured end, as described in any of the above claims, comprising the following steps:

[0025] Provide bottom electrode;

[0026] A first organic hybrid ion-electron conductor layer is prepared on the bottom electrode;

[0027] A first ion gel layer is prepared on the first organic mixed ion-electron conductor layer;

[0028] A top electrode is fabricated on the first ionogel layer.

[0029] The method for fabricating an organic electrochemical biomimetic synaptic device based on a vertically structured end, wherein the fabrication of a first organic mixed ion-electron conductor layer on the bottom electrode includes:

[0030] The organic mixed ionic electronic conductor is dissolved in the first solvent to obtain an organic mixed ionic electronic conductor solution;

[0031] The organic mixed ionic electronic conductor solution is spread on the bottom electrode and annealed to obtain the first organic mixed ionic electronic conductor layer;

[0032] The preparation of the first ion gel layer on the first organic mixed ion-electron conductor layer includes:

[0033] An ionic liquid and PVDF-HFP are dissolved in a second solvent to obtain an ionic gel solution; wherein the mass ratio of the ionic liquid to the PVDF-HFP is 4~1:1.

[0034] The ion gel solution is spread on the first organic mixed ion-electron conductor layer, and the first ion gel layer is obtained after the second solvent evaporates.

[0035] The method for fabricating an organic electrochemical biomimetic synaptic device based on a vertically oriented structure at both ends, wherein the bottom electrode comprises:

[0036] The first electrode material is obtained by cutting.

[0037] The first electrode material is subjected to ultrasonic cleaning, ultraviolet ozone cleaning, and plasma treatment to obtain the bottom electrode.

[0038] The fabrication of the top electrode on the first ionogel layer includes:

[0039] A second electrode material is deposited on the first ionogel layer to obtain the top electrode.

[0040] Beneficial effects: Structurally, the four-layer stacked structure realizes the innovation of ion pathway, and the vertical channel reduces the delay time to below the microsecond level; in terms of device mechanism, the low reduction potential of the organic ion-electron hybrid conductor and the depletion of dedoped charge carriers are utilized to achieve spontaneous current reversal under a certain voltage, realizing the simulation of artificial synaptic sensitization and habituation at the single device level. Attached Figure Description

[0041] Figure 1 This is a schematic diagram of the first structure of the organic electrochemical biomimetic synapse device based on a vertical structure at both ends in an embodiment of the present invention.

[0042] Figure 2 This is a schematic diagram of the second structure of the organic electrochemical biomimetic synapse device based on a vertical structure at both ends, as described in an embodiment of the present invention.

[0043] Figure 3 This is a test diagram of the organic electrochemical biomimetic synaptic device with a vertical structure at both ends during the sensitization stage in an embodiment of the present invention.

[0044] Figure 4 This is a test diagram of the habituation stage of an organic electrochemical biomimetic synapse device based on a vertical structure at both ends, as described in an embodiment of the present invention.

[0045] Explanation of reference numerals in the attached figures:

[0046] 1. Bottom electrode; 2. First organic mixed ionic electronic conductor layer; 3. First ionic gel layer; 4. Top electrode; 5. Dielectric layer. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this invention clearer and more explicit, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0048] Please also refer to Figures 1-3 This invention provides some embodiments of an organic electrochemical biomimetic synapse device based on a vertical structure at both ends.

[0049] Breakthroughs in organic mixed ionic-electronic conductors (OMIECs) have opened new avenues for overcoming the energy efficiency and dynamics bottlenecks in neuromorphic hardware. By constructing donor-acceptor microstructures, such as P(g2T-TT), P(gPyDPP-T2), and P(gTDPPT), in conjugated polymers, structures larger than 5 cm² have been simultaneously achieved. 2 The high carrier mobility ( / (V·s) and ion permeability three times that of conventional materials; the molecular formula of P(g2T-TT) is as follows:

[0050] , where n represents the degree of aggregation;

[0051] The molecular formula of P(gPyDPP-T2) is as follows:

[0052] m=6 or 7, n represents the degree of polymerization;

[0053] The molecular formula of P(gTDPPT) is as follows:

[0054] , , where n represents the degree of aggregation.

[0055] By designing a vertical structure, ion migration time can be significantly shortened, reducing the energy consumption of a single synaptic event to below 0.3 nJ, thus establishing an efficient platform for simulating the plasticity of biomimetic synapses. Although the intrinsic properties of the material already meet industrialization requirements, and cycling stability greater than 10⁻⁶ has been achieved... 4 While existing lateral devices boast performance metrics such as response speed less than 5ms, their limitations, confined by millimeter-scale ion pathways and single-conductivity responses, make it difficult to balance biocompatibility and functional completeness. Compared to mainstream silicon-based synapse chips, vertical structure devices exhibit generational advantages: a hundredfold increase in response speed, a 400-fold increase in energy efficiency density, and perfect compatibility with flexible electronics manufacturing paradigms thanks to their all-solution low-temperature process (<150℃).

[0056] like Figure 1 As shown, the organic electrochemical biomimetic synapse device based on a vertical structure at both ends of the present invention includes:

[0057] The bottom electrode 1, the first organic mixed ion-electron conductor layer 2, the first ion gel layer 3, and the top electrode 4 are stacked sequentially.

[0058] The first ion gel layer 3 is configured to provide anions; the first organic mixed ion-electron conductor layer 2 is configured to transport anions and electrons; and the top electrode 4 is configured to apply a bias voltage to drive anion migration.

[0059] Specifically, the device is formed by stacking multiple functional layers, with at least four functional layers: a bottom electrode 1, a first organic mixed ionic conductor layer 2, a first ionic gel layer 3, and a top electrode 4. The first ionic gel layer 3 contains anions and cations, and the first organic mixed ionic conductor can transport anions and electrons. When a voltage is applied to the bottom electrode 1 and the top electrode 4, the anions in the ionic gel layer gradually migrate into the organic mixed ionic conductor under the action of the electric field, realizing electrochemical doping of the organic mixed ionic conductor, generating a large number of holes, and gradually increasing the conductivity to simulate the synaptic sensitization process. As the voltage is further applied, the electrochemically doped anions move further downward under the action of the electric field, resulting in a dedoping effect and a decrease in conductivity to simulate the synaptic habituation process.

[0060] This invention utilizes the synergistic design of four vertical heterojunction layers (top electrode 4 / first ion gel layer 3 / first organic mixed ion-electron conductor layer 2 / bottom electrode 1) (e.g. Figure 1 As shown in the figure, the ion-electron coupling mechanism was reconstructed at the molecular scale. The sum of the thicknesses of the first organic mixed ion-electron conductor layer 2 and the first ion gel layer 3 is 100 nm to 500 nm. Structurally, a four-layer stacked structure was adopted to achieve ion pathway innovation, and the 100-500 nm vertical channel drastically reduced the delay time to the microsecond level. In terms of device mechanism, the low reduction potential of organic ion-electron mixed conductors (OMIECs) and the depletion of dedoped carriers were utilized to achieve spontaneous current reversal under a certain voltage, realizing the simulation of artificial synaptic sensitization and habituation at the single device level.

[0061] Traditional neuromorphic chips rely on discrete sensing, storage, and processing units, while the organic electrochemical biomimetic synapse device based on a vertically structured end-point structure proposed in this invention integrates synaptic plasticity simulation and event-driven functionality within a single unit. This device utilizes the electrochemical doping and dedoping effects of anions in ionomer gels on OMIECs to achieve non-volatile weighted storage and adaptive sensitization and habituation response switching. Microsecond-level electrochemical doping dynamics are achieved; simultaneously, leveraging the molecularly engineered band structure of OMIECs materials, a self-terminating overdoping effect is triggered under a specific bias voltage, endowing the device with non-monotonic conductivity response characteristics; utilizing the excellent ion / electron coupling efficiency of the ionomer gel-OMIEC interface, the biomimetic synapse achieves dual-modal behavior of sensitization and habituation. This synergistic design of materials and structure not only overcomes the limitations of traditional organic electrochemical transistors in terms of response speed and functional complexity but also solves the fundamental bottlenecks of silicon-based devices in terms of biocompatibility and energy efficiency.

[0062] By controlling ion migration and doping dynamics through voltage gating, a novel approach is provided for constructing a biologically realistic neuromorphic computing system. The single-device sensing and computing integration will significantly reduce the integration complexity and system power consumption of neuromorphic hardware, laying a solid foundation for the development of next-generation implantable brain-computer interfaces and edge intelligent computing platforms.

[0063] The overall effect of this invention is to achieve ultra-fast response, meeting the needs of real-time biological processing; to achieve ultra-low energy consumption, adapting to edge computing scenarios; to autonomously realize sensitization-habituation coordinated oscillation without the need for external circuitry; and to employ a full-solution low-temperature process below 150°C, compatible with flexible substrates, with a Young's modulus of approximately 2 GPa, perfectly suited for flexible bioelectronic systems. Simultaneously, it overcomes the speed bottlenecks, energy efficiency limitations, and functional limitations of neuromorphic hardware, providing a disruptive solution for implantable brain-computer interfaces and edge neuromorphic computing.

[0064] In a preferred embodiment of the present invention, the first organic mixed ionic electronic conductor layer 2 is made of an organic mixed ionic electronic conductor, wherein the organic mixed ionic electronic conductor is selected from at least one of P(g2T-TT), P(gPyDPP-T2), and P(gTDPPT).

[0065] In a preferred embodiment of the present invention, the first ionogel layer 3 is made of an ionic liquid and PVDF-HFP, wherein the ionic liquid is selected from at least one of [EMIM][TFSI], BMIM:PF6, and TBA-TFSI.

[0066] Specifically, PVDF-HFP is polyvinylidene fluoride-hexafluoropropylene. [EMIM][TFSI] is 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, BMIM:PF6 is 1-butyl-3-methylimidazolium hexafluorophosphate, and TBA-TFSI is tetrabutylammonium bis(trifluoromethanesulfonyl)imide.

[0067] In a preferred implementation of this invention, such as Figure 1 As shown, the thickness of the first organic mixed ionic electronic conductor layer 2 is 50nm~250nm; the thickness of the first ionic gel layer 3 is 50nm~250nm.

[0068] Specifically, the thickness of the first organic mixed ionic conductor layer 2 can be greater than or equal to the thickness of the first ionic gel layer 3. The sum of the thicknesses of the first organic mixed ionic conductor layer 2 and the first ionic gel layer 3 is less than or equal to 500 nm.

[0069] In a preferred embodiment of the present invention, the bottom electrode 1 is selected from at least one of graphene flexible electrode layer, silver nanowire flexible electrode layer, and ITO (indium tin oxide) electrode layer; the thickness of the top electrode 4 is 60 nm.

[0070] Specifically, the bottom electrode 1 can be a transparent electrode layer. Graphene flexible electrode layers and silver nanowire flexible electrode layers have high flexibility and transparency.

[0071] In a preferred implementation of this invention, such as Figure 1 As shown, the top electrode 4 is an Au / Cr electrode layer, in which the thickness of the Au layer is 20nm~80nm and the thickness of the Cr layer is 5nm~15nm.

[0072] Specifically, the Cr layer is located on the first ionogel layer 3, and the Au layer is located on the Cr layer.

[0073] In a preferred embodiment of the present invention, the response time of the organic electrochemical biomimetic synapse device based on a vertically structured end is less than 5ms, and the number of cycles is greater than 10. 4 Second-rate.

[0074] Specifically, organic electrochemical biomimetic synaptic devices based on a vertical structure at both ends have a shorter response time, a higher number of cycles, and better cycle stability.

[0075] In a preferred implementation of this invention, such as Figure 2 As shown, the organic electrochemical biomimetic synapse device based on a vertical structure at both ends further includes: a dielectric layer 5;

[0076] The dielectric layer 5 is located between the first organic mixed ionic electronic conductor layer 2 and the first ionic gel layer 3.

[0077] Specifically, the ion migration rate can be further precisely controlled by introducing a dielectric layer 5 (the dielectric material of the dielectric layer 5 can be polyvinylpyrrolidone, PVP). The thickness of the dielectric layer 5 is 10 nm to 50 nm.

[0078] Based on the organic electrochemical biomimetic synaptic device with a vertical structure at both ends described in any of the above embodiments, the present invention also provides a preferred embodiment of a method for preparing an organic electrochemical biomimetic synaptic device with a vertical structure at both ends.

[0079] The method for fabricating an organic electrochemical biomimetic synaptic device based on a vertically structured two-end configuration according to an embodiment of the present invention includes the following steps:

[0080] Step S100: Provide the bottom electrode;

[0081] Step S200: Prepare a first organic mixed ion-electron conductor layer on the bottom electrode;

[0082] Step S300: Prepare a first ion gel layer on the first organic mixed ion-electron conductor layer;

[0083] Step S400: Prepare a top electrode on the first ionogel layer.

[0084] Specifically, a layer-by-layer fabrication method is used to prepare a first organic mixed ionic conductor layer on the bottom electrode, followed by a first ionic gel layer, and finally a top electrode. The first organic mixed ionic conductor layer and the first ionic gel layer can be prepared by coating methods, such as dip coating, spin coating, slot coating, or blade coating. The top electrode can be prepared by thermal evaporation.

[0085] Step S100 specifically includes:

[0086] Step S110: Prepare the first electrode material;

[0087] Step S120: Perform ultrasonic cleaning, ultraviolet ozone cleaning and plasma treatment on the first electrode material to obtain the bottom electrode.

[0088] Specifically, the first electrode material can be formed into a certain shape and size through transfer, chemical vapor deposition (CVD), etc. Ultrasonic cleaning involves immersing the first electrode material in a solvent, selected from at least one of acetone and isopropanol, followed by ultrasonic cleaning with deionized water. The ultrasonic cleaning time is 10-30 minutes. Ultraviolet ozone cleaning can disinfect and sterilize; the ultraviolet ozone cleaning time is 20-60 minutes. Plasma treatment uses a power of 80 W-120 W for 1-5 minutes.

[0089] Step S200 specifically includes:

[0090] Step S210: Dissolve the organic mixed ionic electronic conductor in the first solvent to obtain an organic mixed ionic electronic conductor solution;

[0091] Step S220: The organic mixed ionic electronic conductor solution is spread on the bottom electrode and annealed to obtain the first organic mixed ionic electronic conductor layer.

[0092] Specifically, the organic mixed ionic conductor is added to a first solvent, and the mixture is heated and stirred to dissolve the organic mixed ionic conductor. The organic mixed ionic conductor is selected from at least one of P(g2T-TT), P(gPyDPP-T2), and P(gTDPPT). The first solvent is selected from at least one of chlorobenzene and chloroform. The heating temperature is 50℃~80℃, and the stirring time is 5 h~24 h. The concentration of the organic mixed ionic conductor solution is 1 mg / mL~5 mg / mL. The annealing temperature is 100 ℃~140 ℃, and the annealing time is 5 min~20 min.

[0093] Step S300 specifically includes:

[0094] Step S310: Dissolve the ionic liquid and PVDF-HFP in a second solvent to obtain an ionic gel solution; wherein the mass ratio of the ionic liquid to the PVDF-HFP is 4~1:1;

[0095] Step S320: The ion gel solution is spread on the first organic mixed ion-electron conductor layer, and the first ion gel layer is obtained after the second solvent evaporates.

[0096] Specifically, the ionic liquid is selected from at least one of [EMIM][TFSI], BMIM:PF6, and TBA-TFSI. PVDF-HFP and the ionic liquid are added to a second solvent, and the mixture is heated and stirred to dissolve both PVDF-HFP and the ionic liquid. The second solvent can be acetone. The heating temperature is 50 ℃ to 70 ℃, and the stirring can be done using magnetic stirring at a speed of 300 rpm to 700 rpm. The evaporation of the second solvent can be carried out at room temperature.

[0097] Step S400 specifically includes:

[0098] Step S410: Deposit the second electrode material on the first ion gel layer to obtain the top electrode.

[0099] Specifically, the top electrode can be prepared by exposure and development.

[0100] Example 1

[0101] (1) Cut the ITO glass (which consists of a glass substrate and an ITO electrode layer, with the ITO electrode layer on the glass substrate having a thickness of 200 nm, and the ITO electrode layer serving as the bottom electrode) to the target size (2×2 cm). 2 The surface was then ultrasonically cleaned with acetone, isopropanol, and deionized water for 15 minutes each, followed by ultraviolet ozone cleaning (30 minutes) and plasma treatment (100 W power, 2 minutes) to improve its hydrophilicity.

[0102] (2) Solution preparation: Dissolve P(g2T-TT) in chlorobenzene (concentration of 3 mg / mL) and stir at 70℃ for 12 h; Spin coating: Set the spin coating parameters of the spin coater according to the required thickness of organic mixed ionic electronic conductors (OMIECs); Annealing: Anneal at 120℃ for 10 min to form a uniform film with a thickness of 150 nm.

[0103] (3) Synthesis of ion gel solution: [EMIM][TFSI] and PVDF-HFP (mass ratio of 2.5:1) were dissolved in acetone and then magnetically stirred (500 rpm, 60℃) until completely transparent; after spin coating the ion gel solution, the solvent was evaporated at room temperature for 30 min to form a gel layer with a thickness of 100 nm.

[0104] (4) Photoresist is spin-coated on the stacked structure, and electrode patterns are formed by electron beam exposure and development. Au / Cr electrodes are deposited by electron beam evaporation.

[0105] Organic electrochemical biomimetic synaptic devices based on a vertical structure at both ends have the following operating characteristics:

[0106] 1. Electrochemical stability characteristics:

[0107] With a rate of 100 mV / s and an amplitude of 0~1 V, a triangular wave scan can be performed 10 times. 4 The retention rate was greater than 95%.

[0108] 2. Response speed:

[0109] A voltage pulse with a pulse width of 1 ms and an amplitude of 0.5 V is applied to the ITO electrode, with a rise / fall time of less than 1 μs.

[0110] 3. Bionic characteristics:

[0111] like Figure 3 As shown, during the sensitization stage, the current gradually increases with increasing voltage, reaching a peak value of 10. -5 Order of magnitude A; such as Figure 4 As shown, during the habituation phase, the current gradually decreases with the action of voltage.

[0112] Example 2

[0113] (1) Cut the ITO glass (which consists of a glass substrate and an ITO electrode layer, with the ITO electrode layer on the glass substrate having a thickness of 200 nm, and the ITO electrode layer serving as the bottom electrode) to the target size (2×2 cm). 2 The surface was then ultrasonically cleaned with acetone, isopropanol, and deionized water for 10 minutes each, followed by ultraviolet ozone cleaning (30 minutes) and plasma treatment (80 W power, 1 minute) to improve its hydrophilicity.

[0114] (2) Solution preparation: Dissolve P(gPyDPP-T2) in chloroform (concentration of 1 mg / mL) and stir at 50℃ for 5 h; Spin coating: Set the spin coating parameters of the spin coater according to the required thickness of organic mixed ionic electronic conductors (OMIECs); Annealing: Anneal at 100℃ for 5 min to form a uniform film with a thickness of 50 nm.

[0115] (3) Synthesis of ion gel solution: TBA-TFSI and PVDF-HFP (mass ratio 1:1) were dissolved in acetone and then magnetically stirred (300 rpm, 50℃) until completely transparent; after spin coating the ion gel solution, the solvent was evaporated at room temperature for 1 h to form a gel layer with a thickness of 50 nm.

[0116] (4) Photoresist is spin-coated on the stacked structure, and electrode patterns are formed by electron beam exposure and development. Au / Cr electrodes are deposited by electron beam evaporation.

[0117] Example 3

[0118] (1) Cut the ITO glass (which consists of a glass substrate and an ITO electrode layer, with the ITO electrode layer on the glass substrate having a thickness of 200 nm, and the ITO electrode layer serving as the bottom electrode) to the target size (2×2 cm). 2The surface was then ultrasonically cleaned with acetone, isopropanol, and deionized water for 30 minutes each, followed by ultraviolet ozone cleaning (30 minutes) and plasma treatment (120 W power, 5 minutes) to improve its hydrophilicity.

[0119] (2) Solution preparation: Dissolve P(gTDPPT) in chlorobenzene (concentration of 5 mg / mL) and stir at 80℃ for 24 h; Spin coating: Set the spin coating parameters of the spin coater according to the required thickness of organic mixed ionic electronic conductors (OMIECs); Annealing: Anneal at 140℃ for 20 min to form a uniform film with a thickness of 250 nm.

[0120] (3) Synthesis of ion gel solution: BMIM:PF6 and PVDF-HFP (mass ratio of 4:1) were dissolved in acetone and then magnetically stirred (700 rpm, 70℃) until completely transparent; after spin coating the ion gel solution, the solvent was evaporated at room temperature for 50 min to form a gel layer with a thickness of 200 nm.

[0121] (4) Photoresist is spin-coated on the stacked structure, and electrode patterns are formed by electron beam exposure and development. Au / Cr electrodes are deposited by electron beam evaporation.

[0122] Based on the organic electrochemical biomimetic synapse device with a vertical structure at both ends described in any of the above embodiments, the present invention also provides a preferred embodiment of a biomimetic neuromorphic chip.

[0123] The biomimetic neuromorphic chip of this invention includes: a plurality of devices arranged in a cross array, wherein the devices are organic electrochemical biomimetic synapse devices based on a vertical structure at both ends as described in any of the above embodiments; the bottom electrode of each device is connected to an independent word line, and the top electrode of each device is connected to a shared bit line.

[0124] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A biomimetic organic electrochemical synapse device based on a vertical structure at both ends, characterized in that, include: The bottom electrode, the first organic mixed ion-electron conductor layer, the first ion gel layer, and the top electrode are stacked sequentially. The first ionogel layer is configured to provide anions; The first organic mixed ionic electron conductor layer is configured to transport anions and electrons; The top electrode is configured to apply a bias voltage to drive anion migration; The first organic mixed ionic electronic conductor layer is made of an organic mixed ionic electronic conductor, wherein the organic mixed ionic electronic conductor is selected from at least one of P(g2T-TT), P(gPyDPP-T2), and P(gTDPPT); The first ionogel layer is made of ionic liquid and PVDF-HFP, wherein the ionic liquid is selected from at least one of [EMIM][TFSI], BMIM:PF6, and TBA-TFSI.

2. The organic electrochemical biomimetic synapse device based on a vertical structure at both ends according to claim 1, characterized in that, The thickness of the first organic mixed ionic electronic conductor layer is 50 nm to 250 nm; The thickness of the first ionogel layer is 50nm~250nm.

3. The organic electrochemical biomimetic synapse device based on a vertical structure at both ends according to claim 1, characterized in that, The bottom electrode is selected from at least one of graphene flexible electrode layer, silver nanowire flexible electrode layer, and ITO electrode layer; the thickness of the bottom electrode is 50 nm to 200 nm. The top electrode is an Au / Cr electrode layer, wherein the thickness of the Au layer is 20nm~80nm and the thickness of the Cr layer is 5nm~15nm.

4. The organic electrochemical biomimetic synapse device based on a vertical structure at both ends according to claim 1, characterized in that, The response time of the organic electrochemical biomimetic synapse device based on a vertical structure at both ends is less than 5ms, and the number of cycles is greater than 10. 4 Second-rate.

5. The organic electrochemical biomimetic synaptic device based on a vertical structure at both ends according to any one of claims 1 to 4, characterized in that, The organic electrochemical biomimetic synapse device based on a vertical structure at both ends further includes: a dielectric layer; The dielectric layer is located between the first organic mixed ionic electronic conductor layer and the first ionic gel layer.

6. A biomimetic neuromorphic chip, characterized in that, include: Multiple devices arranged in a cross array, wherein the devices employ the organic electrochemical biomimetic synaptic device based on a vertical structure at both ends as described in any one of claims 1 to 5; The bottom electrode of each device is connected to an independent word line, and the top electrode of each device is connected to a shared bit line.

7. A method for fabricating an organic electrochemical biomimetic synaptic device based on a vertically structured end-point structure as described in any one of claims 1 to 5, characterized in that, Including the following steps: Provide bottom electrode; A first organic hybrid ion-electron conductor layer is prepared on the bottom electrode; A first ion gel layer is prepared on the first organic mixed ion-electron conductor layer; A top electrode is fabricated on the first ionogel layer.

8. The method for fabricating an organic electrochemical biomimetic synaptic device based on a vertically structured end according to claim 7, characterized in that, The fabrication of the first organic mixed ionic-electron conductor layer on the bottom electrode includes: The organic mixed ionic electronic conductor is dissolved in the first solvent to obtain an organic mixed ionic electronic conductor solution; The organic mixed ionic electronic conductor solution is spread on the bottom electrode and annealed to obtain the first organic mixed ionic electronic conductor layer; The preparation of the first ion gel layer on the first organic mixed ion-electron conductor layer includes: An ionic liquid and PVDF-HFP are dissolved in a second solvent to obtain an ionic gel solution; wherein the mass ratio of the ionic liquid to the PVDF-HFP is 4~1:

1. The ion gel solution is spread on the first organic mixed ion-electron conductor layer, and the first ion gel layer is obtained after the second solvent evaporates.

9. The method for fabricating an organic electrochemical biomimetic synaptic device based on a vertically structured end according to claim 7, characterized in that, The provided bottom electrode includes: Preparation of the first electrode material; The first electrode material is subjected to ultrasonic cleaning, ultraviolet ozone cleaning, and plasma treatment to obtain the bottom electrode. The fabrication of the top electrode on the first ionogel layer includes: A second electrode material is deposited on the first ionogel layer to obtain the top electrode.

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