Composition for forming resist underlayer film
By introducing a crosslinking agent with polycyclic aromatic structures and reactive groups into the composition for forming the resist underlayer film, the problem of reduced resist pattern accuracy on nitrogen-containing substrates was solved, and high precision and stability of the resist underlayer film were achieved.
Patent Information
- Application Number
- CN202480031499.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-05-09
- Filing Date
- 2024-05-08
- Publication Date
- 2025-12-05
AI Technical Summary
When using a substrate containing nitrogen atoms, the precision of the photoresist pattern in the existing photoresist underlayer film is easily affected by the diffusion of amine components, resulting in reduced resolution, which further decreases after long-term storage.
A composition for forming a photoresist underlayer film, comprising a polymer and a crosslinking agent, wherein the polymer contains a unit structure with a polycyclic aromatic structure and the crosslinking agent has reactive groups, is used to form a photoresist underlayer film on a nitrogen-containing substrate, thereby inhibiting the diffusion of amine components and improving pattern accuracy.
It effectively inhibits the reduction in resist resolution caused by amine diffusion, ensuring that the resolution of the underlying resist film does not easily decrease after long-term storage, thus improving the precision of the photolithography process.