IPD band-pass filter and manufacturing method thereof

Abstract

The invention provides an IPD band-pass filter and a manufacturing method thereof. The filter comprises a metal grounding layer and a silicon dielectric substrate layer arranged on the metal grounding layer. The first metal layer is arranged on the silicon dielectric substrate layer, and the first metal layer comprises a first metal conductive layer of the parallel assembly, a first conductive layer of the first planar spiral inductor, a first conductive metal layer of the microstrip transmission line and a first electrode of the first metal-insulator-metal MIM capacitor; an intermediate layer on the first electrode of the first MIM capacitor; the second metal layer is arranged on the middle layer and the first metal layer, and the second metal layer comprises a second metal conductive layer of the parallel assembly, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor and a second conductive metal layer of the microstrip transmission line. According to the invention, chip-level integration is realized, so that the size of the whole circuit is compressed to the minimum, and miniaturization is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor devices, and particularly relates to an IPD band-pass filter and a manufacturing method thereof. BACKGROUND

[0002] With the rapid development of semiconductor technology, electronic systems are constantly moving towards high integration, high performance and miniaturization. As a circuit signal filter widely used in various fields such as satellite communication, electronic countermeasures, radar systems and various types of intelligent consumer electronic devices, especially in radar and electronic warfare systems that require strong anti-interference ability and high compatibility, the band-pass filter plays a crucial role, and its performance directly determines the communication quality and anti-interference ability of the entire system.

[0003] To realize effective screening of signals in a specific frequency band, the band-pass filter usually adopts a symmetrical circuit structure composed of passive elements such as resistors, capacitors, inductors and transmission lines to achieve the filtering performance that meets the design indicators.

[0004] However, with the increasing requirements of overall performance and size of radio frequency communication systems, the design flexibility of symmetrical circuit structure is limited, and it is difficult to further reduce the circuit size while meeting the performance indicators. When the working frequency band is reduced to below Sub-6 GHz, the filter using microstrip line structure is difficult to apply due to its inherent large physical size and low integration, and the symmetrical circuit structure often leads to high circuit order and excessive number of elements, making it difficult to achieve small size. In addition, the large inductance required to realize low frequency band usually depends on the large size of the planar spiral inductor, and the wiring between elements has a minimum spacing limit. These two factors together make it difficult to further reduce the physical size of the filter, seriously hindering the development of band-pass filters towards wideband and miniaturization. SUMMARY

[0005] The present application provides an IPD band-pass filter and a manufacturing method thereof, which solves the defect that the symmetrical circuit structure in the prior art is limited by large physical size and low integration, and is difficult to realize miniaturization, realizes chip-level integration, greatly saves the plane area, compresses the size of the entire circuit, and realizes miniaturization.

[0006] The application provides an IPD band-pass filter, comprising a metal ground layer and a silicon dielectric substrate layer arranged on the metal ground layer; a first metal layer arranged on the silicon dielectric substrate layer, the first metal layer comprising a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line and a first electrode of a first metal-insulator-metal (MIM) capacitor; an intermediate layer on the first electrode of the first MIM capacitor; and a second metal layer arranged on the intermediate layer and the first metal layer, the second metal layer comprising a second metal conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor and a second conductive metal layer of the microstrip transmission line.

[0007] According to the IPD band-pass filter, the parallel component comprises a first parallel unit and a second parallel unit, wherein the first parallel unit is used for receiving a radio frequency signal input from an input end and performing low-pass filtering on the radio frequency signal to obtain a first filtered signal and output the first filtered signal; the first MIM capacitor is connected in series with the first parallel unit to receive the first filtered signal output by the first parallel unit and is connected in series with the second parallel unit to perform signal filtering and frequency selection on the received first filtered signal to obtain a second filtered signal and output the second filtered signal; the first planar spiral inductor is connected in parallel with the second parallel unit to filter a signal in a first target range of a preset frequency point in the second filtered signal and enhance a stopband attenuation of a signal in a second target range of the preset frequency point, to obtain a third filtered signal and output the third filtered signal through the microstrip transmission line.

[0008] The IPD band-pass filter provided by the application comprises a first parallel unit, a second parallel unit and a third parallel unit, wherein the first parallel unit comprises a second planar spiral inductor and a second MIM capacitor connected in parallel, the second parallel unit comprises a third planar spiral inductor and a third MIM capacitor connected in parallel, the second planar spiral inductor is connected to the input end, the second MIM capacitor is connected in parallel to the first MIM capacitor, the third planar spiral inductor is connected in series to the first MIM capacitor and connected in parallel to the first planar spiral inductor, and the third MIM capacitor is connected in series to the first MIM capacitor.

[0009] The IPD band-pass filter provided by the application further comprises a first GSG assembly and a second GSG assembly, the first GSG assembly comprises a first ground pad and a first signal pad, the second GSG assembly comprises a second ground pad and a second signal pad, the first signal pad is connected to the second planar spiral inductor, and the second signal pad is connected to the microstrip transmission line, wherein the first metal layer further comprises first conductive layers of the first signal pad, the first ground pad, the second signal pad and the second ground pad, and the second metal layer further comprises second conductive layers of the first signal pad, the first ground pad, the second signal pad and the second ground pad.

[0010] The IPD band-pass filter provided by the application further comprises a third parallel unit, the third parallel unit is connected in series to the second parallel unit and connected in parallel to the first planar spiral inductor, so as to perform wideband processing and out-of-band suppression optimization on the third filter signal.

[0011] According to the IPD band-pass filter provided by the application, the third parallel unit comprises a fourth planar spiral inductor and a fourth MIM capacitor connected in parallel, the fourth planar spiral inductor is connected in series with the third planar spiral inductor, and the fourth MIM capacitor is connected in parallel with the third MIM capacitor, so as to filter the signal in the first target range of the preset frequency point in the second filter signal and obtain a third filter signal; the fourth planar spiral inductor is connected in parallel with the first planar spiral inductor, so as to enhance the stopband attenuation of the signal in the second target range of the preset frequency point, wherein: the first metal conductive layer of the parallel component further comprises a first electrode of the fourth MIM capacitor and a first conductive layer of the fourth planar spiral inductor, and the intermediate layer is further arranged on the first electrode of the fourth MIM capacitor; the second metal conductive layer of the parallel component further comprises a second electrode of the fourth MIM capacitor and a second conductive layer of the fourth planar spiral inductor, and the second electrode of the fourth MIM capacitor is arranged on the intermediate layer located on the first electrode of the fourth MIM capacitor, and the second conductive layer of the fourth planar spiral inductor is arranged on the first conductive layer of the fourth planar spiral inductor.

[0012] According to the IPD band-pass filter provided by the application, the first metal layer further comprises a first electrode of a fifth MIM capacitor, and the intermediate layer is further arranged on the first electrode of the fifth MIM capacitor; the second metal layer further comprises a second electrode of the fifth MIM capacitor, and the second electrode of the fifth MIM capacitor is arranged on the intermediate layer located on the first electrode of the fifth MIM capacitor.

[0013] According to the IPD band-pass filter provided by the application, the material of the first metal layer comprises at least one of chromium, gold and titanium; and / or, the material of the second metal layer comprises at least one of chromium, gold and titanium.

[0014] The application further provides a manufacturing method of the IPD band-pass filter, comprising the following steps: providing a silicon dielectric substrate layer and forming a metal ground layer on one side of the silicon dielectric substrate layer; forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line and a first electrode of a first metal-insulator-metal (MIM) capacitor on the other side of the silicon dielectric substrate layer; forming an intermediate layer on the first electrode of the first MIM capacitor; forming a second metal layer on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer and the first conductive metal layer of the microstrip transmission line, the second metal layer comprising a second metal conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor and a second conductive metal layer of the microstrip transmission line.

[0015] The application provides a manufacturing method of an IPD band-pass filter, which comprises the following steps of: forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line and a first electrode of a first metal-insulator-metal (MIM) capacitor on a silicon dielectric substrate layer by using a sputtering process; and performing patterning and etching on the first metal layer by using a first mask pattern which is previously set based on the first conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line and the first electrode of the first MIM capacitor, so as to form the first conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line and the first electrode of the first MIM capacitor. The application further provides a manufacturing method of an IPD band-pass filter, which comprises the following steps of: forming a second metal layer on the first conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, an intermediate layer and the first conductive metal layer of the microstrip transmission line by using a sputtering and electroplating process; and performing patterning and etching on the second metal layer by using a second mask pattern which is previously set based on a second conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor and a second conductive metal layer of the microstrip transmission line, so as to form the second conductive layer of the parallel component, the second electrode of the first MIM capacitor, the second conductive layer of the first planar spiral inductor and the second conductive metal layer of the microstrip transmission line.

[0016] The application further provides an electronic device, which comprises a memory, a processor and a computer program stored in the memory and capable of being executed on the processor, and the processor executes the computer program to realize the manufacturing method of the IPD band-pass filter.

[0017] The application further provides a non-transitory computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to realize the manufacturing method of the IPD band-pass filter.

[0018] The application further provides a computer program product, which comprises a computer program, and the computer program is executed by a processor to realize the manufacturing method of the IPD band-pass filter.

[0019] The IPD band-pass filter and the manufacturing method thereof provided by the application integrate the parallel component, the first MIM capacitor, the first planar spiral inductor and the microstrip transmission line on the same silicon dielectric substrate, thereby avoiding welding of discrete components and occupation of extra printed circuit board (PCB) space, thickening the metal layer by using the first metal layer and the second metal layer, increasing the cross-sectional area of the transmission line, reducing the transmission loss of radio frequency signals, compressing the size of the whole circuit and realizing miniaturization. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the present application or the prior art, the drawings required to be used in the following embodiments or prior art description will be briefly introduced. Obviously, the drawings described below are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0021] Figure 1 is one of the structural schematic diagram of the IPD band-pass filter provided by the present application; Figure 2 is the second structural schematic diagram of the IPD band-pass filter provided by the present application; Figure 3 is the flow schematic diagram of the manufacturing method of the IPD band-pass filter provided by the present application; Figure 4 is the structural schematic diagram of the electronic device provided by the present application.

[0022] Reference signs: 1: silicon dielectric substrate layer; 2: first metal layer; 3: intermediate layer; 4: metal ground layer; 5: second metal layer; 6: parallel component; 61: first parallel unit; 611: second planar spiral inductor; 612: second MIM capacitor; 62: second parallel unit; 621: third planar spiral inductor; 623: third MIM capacitor; 63: third parallel unit; 631: fourth planar spiral inductor; 632: fourth MIM capacitor; 7: first MIM capacitor; 8: first planar spiral inductor; 9: fifth MIM capacitor; 10: first GSG component; 101: first ground pad; 102: first signal pad; 11: second GSG component; 111: second ground pad; 112: second signal pad. DETAILED DESCRIPTION

[0023] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be described clearly and completely below in combination with the drawings in the present application. Obviously, the described embodiments are some embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0024] Figure 1 is the structural schematic diagram of the IPD band-pass filter provided by the present application, as shown in Figure 1 the integrated passive device (IPD) band-pass filter includes: The metal ground layer 4 and the silicon dielectric substrate layer 1 arranged on the metal ground layer 4; The first metal layer 2 is arranged on the silicon dielectric substrate layer 1, and the first metal layer includes a first metal conductive layer of the parallel component, a first conductive layer of the first planar spiral inductor, a first conductive metal layer of the microstrip transmission line, and a first electrode of the first metal-insulator-metal (MIM) capacitor; The intermediate layer 3 is arranged on the first electrode of the first MIM capacitor; The second metal layer 5 is arranged on the intermediate layer and the first metal layer, and the second metal layer includes a second metal conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor, and a second conductive metal layer of the microstrip transmission line.

[0025] Specifically, referring to Figure 2 The parallel component 6 includes a first parallel unit 61 and a second parallel unit 62, wherein: the first parallel unit 61 is configured to receive a radio frequency signal input from an input end, and perform low-pass filtering on the radio frequency signal to obtain a first filtered signal and output the first filtered signal; the first MIM capacitor 7 is connected in series with the first parallel unit 61 to receive the first filtered signal output by the first parallel unit 61, and is connected in series with the second parallel unit 62 to perform signal filtering and frequency selection on the received first filtered signal to obtain a second filtered signal and output the second filtered signal; the first planar spiral inductor 8 is connected in parallel with the second parallel unit 62 to filter signals in a first target range of a preset frequency point in the second filtered signal and enhance the stopband attenuation of signals in a second target range of the preset frequency point, to obtain a third filtered signal and output the third filtered signal through the microstrip transmission line.

[0026] It should be noted that, by optimizing the circuit design, the number of inductors and capacitors used is reduced, and by reasonable wiring and element layout, the length of the transmission line is effectively reduced, so as to realize the compact size of the entire circuit and miniaturization.

[0027] It should be noted that the first planar spiral inductor includes two layers of conductive structures, i.e., a first conductive layer of the first planar spiral inductor in the first metal layer and a second conductive layer of the first planar spiral inductor in the second metal layer, and the inductance of the first planar spiral inductor is mainly determined by the number of turns, the inner diameter, the wire width, and the wire spacing. If a large inductance is required, the number of turns and the inner diameter can be increased, or the wire width and the wire spacing can be appropriately reduced, and vice versa. The inductance of the first planar spiral inductor can be determined based on theoretical simulation or prior experience, which is not limited further herein. Since the inductance of the first planar spiral inductor may be large in actual process, the ground pad can be located inside the inductor to improve the utilization rate of the circuit plane area.

[0028] In addition, the preset frequency point can be a certain specific frequency point, such as a zero frequency point, which can be configured according to actual design, and the present disclosure is not limited further. The first planar spiral inductor filters signals near the zero frequency and enhances the stopband attenuation near the zero frequency.

[0029] In addition, the first MIM capacitor is composed of a first electrode, an intermediate layer and a second electrode, and the capacitance value of the first MIM capacitor is proportional to the opposite area of the first electrode and the second electrode. The larger the opposite area, the larger the capacitance value. The capacitance value of the first MIM capacitor can be determined based on theoretical simulation or prior experience, and the present disclosure is not limited further.

[0030] Further, the first parallel unit includes a second planar spiral inductor 611 and a second MIM capacitor 612 connected in parallel, and the second parallel unit includes a third planar spiral inductor 621 and a third MIM capacitor 622 connected in parallel. The second planar spiral inductor 611 is connected to the input end, and the second MIM capacitor 612 is connected in parallel with the first MIM capacitor 7. The third planar spiral inductor 621 is connected in series with the first MIM capacitor 7 and connected in parallel with the first planar spiral inductor 8. The third MIM capacitor 622 is connected in series with the first MIM capacitor 7. The first metal conductive layer of the parallel component includes the first electrode of the second MIM capacitor and the first electrode of the third MIM capacitor. The intermediate layer is also provided on the first electrode of the second MIM capacitor and the first electrode of the third MIM capacitor. The second metal conductive layer of the parallel component includes the second electrode of the second MIM capacitor and the second electrode of the third MIM capacitor. The second electrode of the second MIM capacitor is provided on the intermediate layer located on the first electrode of the second MIM capacitor. The second electrode of the third MIM capacitor is provided on the intermediate layer located on the first electrode of the third MIM capacitor. The first metal conductive layer of the parallel component further includes the first conductive layer of the second planar spiral inductor and the first conductive layer of the third planar spiral inductor. The first metal conductive layer of the parallel component further includes the second conductive layer of the second planar spiral inductor and the second conductive layer of the third planar spiral inductor. The second conductive layer of the second planar spiral inductor is located on the first conductive layer of the second planar spiral inductor. The second conductive layer of the third planar spiral inductor is located on the first conductive layer of the third planar spiral inductor.

[0031] It is worth noting that the first MIM capacitor and the third planar spiral inductor form a series resonance structure, the third planar spiral inductor and the third capacitor form a parallel resonance structure, the first MIM capacitor, the third planar spiral inductor and the third capacitor form a series-parallel resonance structure, the series resonance structure in the series-parallel resonance structure has the minimum impedance at the resonance frequency, allowing the signal at the frequency to pass through; while the parallel resonance structure has the maximum impedance at the resonance frequency, presenting a high resistance state to the signal, thereby suppressing the signal at the frequency, and can introduce a transmission zero point outside the passband, thereby enhancing the out-of-band suppression level. This combination can achieve the screening of signals in a specific frequency band. In addition, by adjusting the parameters of the first MIM capacitor and the third planar spiral inductor, the resonance frequency can be accurately controlled, so that the structure only allows the effective frequency band of the radio frequency signal to pass through.

[0032] In an optional embodiment, continuing to refer to Figure 2 , the IPD bandpass filter further includes a first ground, signal, ground (GSG) assembly 10 and a second GSG assembly 11, the first GSG assembly 10 includes a first ground pad 101 and a first signal pad 102, the second GSG assembly 11 includes a second ground pad 111 and a second signal pad 112, the first signal pad 101 is connected with the second planar spiral inductor 611, and the second signal pad 112 is connected with the microstrip transmission line, wherein: the first metal layer further includes a first conductive layer of the first signal pad, the first ground pad, the second signal pad and the second ground pad; the second metal layer further includes a second conductive layer of the first signal pad, the first ground pad, the second signal pad and the second ground pad.

[0033] It should be added that the GSG structure includes two ground pads and a signal pad symmetrically placed, the signal pad can adopt top metal M2 and / or M3, and the ground pad can adopt top metal M2 and / or M3, middle metal M2 and bottom metal M1. The ground pad is mainly used to provide a stable reference ground. By locating the ground pad, the first electrode of the first MIM, the first conductive layer of each planar spiral inductor in the parallel unit, the first conductive layer of the first planar spiral inductor and the metal ground plane at the bottom of the microstrip transmission line on the same layer, the wiring is simplified, the complexity of cross-layer connection is reduced, and the integrity and anti-interference ability of signal transmission are ensured.

[0034] In an optional embodiment, the parallel assembly further includes a third parallel unit 63, the third parallel unit 63 is connected in series with the second parallel unit 62 and in parallel with the first planar spiral inductor 8, to perform wideband processing and out-of-band suppression optimization on the third filtered signal.

[0035] Specifically, the third parallel unit 63 comprises a fourth planar spiral inductor 631 and a fourth MIM capacitor 632 connected in parallel, the fourth planar spiral inductor 631 is connected in series with the third planar spiral inductor 621, and the fourth MIM capacitor 632 is connected in parallel with the third MIM capacitor 622, so as to filter the signal in the first target range of the preset frequency point in the second filter signal, and obtain a third filter signal; the fourth planar spiral inductor 631 is connected in parallel with the first planar spiral inductor 8, so as to enhance the stopband attenuation of the signal in the second target range of the preset frequency point, and output the processed third filter signal through the microstrip transmission line, wherein: the first metal conductive layer of the parallel component further comprises a first electrode of the fourth MIM capacitor and a first conductive layer of the fourth planar spiral inductor, and the intermediate layer is further arranged on the first electrode of the fourth MIM capacitor; the second metal conductive layer of the parallel component further comprises a second electrode of the fourth MIM capacitor and a second conductive layer of the fourth planar spiral inductor, and the second electrode of the fourth MIM capacitor is arranged on the intermediate layer located on the first electrode of the fourth MIM capacitor, and the second conductive layer of the fourth planar spiral inductor is arranged on the first conductive layer of the fourth planar spiral inductor.

[0036] In an optional embodiment, the first metal layer further comprises a first electrode of a fifth MIM capacitor, and the intermediate layer is further arranged on the first electrode of the fifth MIM capacitor; the second metal layer further comprises a second electrode of the fifth MIM capacitor, and the second electrode of the fifth MIM capacitor is arranged on the intermediate layer located on the first electrode of the fifth MIM capacitor. It should be noted that by connecting the fifth capacitor with the first planar spiral inductor, the impedance matching performance in the passband of the filter is improved, the impedance matching is realized, the signal reflection is reduced, the return loss is optimized, the signal is transmitted more efficiently, the energy loss is reduced, and the signal transmission efficiency and quality are improved.

[0037] In an optional embodiment, the material of the first metal layer comprises at least one of chromium, gold and titanium; and / or, the material of the second metal layer comprises at least one of chromium, gold and titanium.

[0038] In summary, the embodiment of the present application integrates the parallel component, the first MIM capacitor, the first planar spiral inductor and the microstrip transmission line on the same silicon dielectric substrate, avoids welding and occupying additional printed circuit board (PCB) space of discrete components, and thickens the metal layer by using the first metal layer and the second metal layer, thereby increasing the cross-sectional area of the transmission line, reducing the transmission loss of the radio frequency signal, and compressing the size of the entire circuit to realize miniaturization.

[0039] The manufacturing method of the IPD bandpass filter provided by the present application will be described below. The manufacturing method of the IPD bandpass filter described below can be correspondingly referred to the IPD bandpass filter described above.

[0040] Figure 3A flowchart of a manufacturing method of an IPD bandpass filter is shown, the method comprising: S31, providing a silicon dielectric substrate layer and forming a metal ground layer on one side of the silicon dielectric substrate layer; S32, forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line, and a first electrode of a first metal-insulator-metal (MIM) capacitor on the other side of the silicon dielectric substrate layer; S33, forming an intermediate layer on the first electrode of the first MIM capacitor; S34, forming a second metal layer on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer, and the first conductive metal layer of the microstrip transmission line, the second metal layer comprising a second metal conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor, and a second conductive metal layer of the microstrip transmission line.

[0041] It should be noted that the step numbers "S31-S35" in the present specification do not represent the sequence of the manufacturing method of the IPD bandpass filter, and the manufacturing method of the IPD bandpass filter of the present application will be described in detail below.

[0042] Step S31, providing a silicon dielectric substrate layer and forming a metal ground layer on one side of the silicon dielectric substrate layer. It should be noted that the silicon dielectric substrate layer can be selected according to the actual design, such as N-type doped high resistance silicon, which is not limited further herein. By providing the silicon dielectric substrate layer, physical support and electrical isolation are provided, which has good mechanical strength and thermal stability, and can protect the circuit from external environment. In addition, the metal ground layer can be formed on the silicon dielectric substrate layer by sputtering process, or bonded on the silicon dielectric substrate layer by metal bonding process, which can be selected according to actual process requirements, and is not limited further herein.

[0043] Step S32, forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line, and a first electrode of a first metal-insulator-metal (MIM) capacitor on the other side of the silicon dielectric substrate layer;

[0044] In the embodiment, forming the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line and the first electrode of the first metal-insulator-metal MIM capacitor on the other side of the silicon dielectric substrate layer comprises: forming the first metal layer on the silicon dielectric substrate layer by using the sputtering process; patterning and etching the first metal layer by using the first mask pattern previously set based on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line and the first electrode of the first metal-insulator-metal MIM capacitor to form the first conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the metal ground plane of the microstrip transmission line and the first electrode of the metal-insulator-metal MIM capacitor.

[0045] Further, patterning and etching the first metal layer by using the first mask pattern previously set based on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line and the first electrode of the first metal-insulator-metal MIM capacitor to form the first conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the metal ground plane of the microstrip transmission line and the first electrode of the metal-insulator-metal MIM capacitor comprises: coating the photoresist on the surface of the first metal layer to form the photoresist layer, defining the first mask pattern according to the pattern of the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first material metal layer of the microstrip transmission line and the first electrode of the first metal-insulator-metal MIM capacitor, exposing the photoresist layer to transfer the structure of the first mask pattern to the photoresist layer, developing the photoresist layer and taking the developed photoresist layer as the mask to etch the first metal layer by using the etching process to form the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line and the first electrode of the first metal-insulator-metal MIM capacitor, and finally removing the photoresist layer.

[0046] It should be noted that in the implementation process of patterning the first metal layer, all regions of the first metal layer except the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line, and the first electrode of the first metal-insulator-metal (MIM) capacitor can be etched, or only the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line, and the first electrode of the first MIM capacitor can be electrically isolated from other regions in the first metal layer. Specifically, the boundary of the first mask pattern defined in the first metal layer can be etched, and a gap with a certain line width can be etched along the boundary of the first mask pattern. Finally, the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first material metal layer of the microstrip transmission line, and the first electrode of the first MIM capacitor can be completely separated from the first metal layer, and the other regions in the first metal layer can still be retained to achieve electrical separation.

[0047] In an optional embodiment, the parallel component includes a first parallel unit and a second parallel unit, the first parallel unit includes a second planar spiral inductor and a second MIM capacitor, and the second parallel unit includes a third planar spiral inductor and a third MIM capacitor. Accordingly, the first metal conductive layer of the parallel component further includes a first electrode of the second MIM capacitor, a first electrode of the third MIM capacitor, a first conductive layer of the second planar spiral inductor, and a first conductive layer of the third planar spiral inductor. Specifically, the first electrode of the first MIM capacitor and the first conductive layer of the first planar spiral inductor can be formed synchronously, and this will not be repeated here.

[0048] In an optional embodiment, the parallel component further includes a third parallel unit, the formation of the third parallel unit is described with reference to the first parallel unit and the second parallel unit, and the third parallel unit can be formed synchronously with the first parallel unit and the second parallel unit, and this will not be repeated here.

[0049] In an optional embodiment, the IPD bandpass filter further includes a first ground-signal-ground (GSG) component and a second GSG component, the first GSG component includes a first ground pad, and the second GSG component includes a second ground pad. When the first metal layer is formed, the first ground pad and the second ground pad are also formed. The specific manner is described above, and this will not be repeated here.

[0050] In step S33, an intermediate layer is formed on the first electrode of the first MIM capacitor.

[0051] It should be noted that the intermediate layer can be made of insulating materials such as silicon nitride, silicon oxide, etc. to isolate the first electrode and the second electrode and play a role of energy storage. The specific material can be selected according to actual design requirements, which is not limited further herein.

[0052] In addition, when the intermediate layer is formed on the first electrode of the first MIM capacitor, the intermediate layer is also formed on the first electrode of the second MIM capacitor and the first electrode of the third MIM capacitor. In step S34, the second metal layer is formed on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer and the first conductive metal layer of the microstrip transmission line. The second metal layer includes the second metal conductive layer of the parallel component, the second electrode of the first MIM capacitor, the second conductive layer of the first planar spiral inductor and the second conductive metal layer of the microstrip transmission line.

[0053] In the embodiment, the second metal layer is formed by: forming the second metal layer on the first conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer and the first conductive metal layer of the microstrip transmission line by using sputtering and electroplating process; and patterning and etching the second metal layer by using the second mask pattern previously set based on the second metal conductive layer of the parallel component, the second electrode of the first MIM capacitor, the second conductive layer of the first planar spiral inductor and the second conductive metal layer of the microstrip transmission line, to form the second metal conductive layer of the parallel component, the second electrode of the first MIM capacitor, the second conductive layer of the first planar spiral inductor and the second conductive metal layer of the microstrip transmission line.

[0054] It should be noted that the patterning and etching of the second metal layer can refer to the patterning and etching of the first metal layer, which is not repeated herein. In addition, the preset electroplating process includes preselected electrolyte, preset electroplating mode and current density, temperature and electroplating time and other parameter control modes, which can be configured according to actual design requirements, size of the second metal layer and required metal thickness, etc. which is not limited further herein.

[0055] In an optional embodiment, the parallel component includes a first parallel unit and a second parallel unit, the first parallel unit includes a second planar spiral inductor and a second MIM capacitor, and the second parallel unit includes a third planar spiral inductor and a third MIM capacitor. Correspondingly, the second metal conductive layer of the parallel component further includes the second electrode of the second MIM capacitor, the second electrode of the third MIM capacitor, the second conductive layer of the second planar spiral inductor and the second conductive layer of the third planar spiral inductor. Specifically, the second electrode of the first MIM capacitor and the second conductive layer of the first planar spiral inductor can be formed synchronously, which is not repeated herein.

[0056] In an alternative embodiment, the parallel assembly further comprises a third parallel unit, the third parallel unit is formed in the same way as the first parallel unit and the second parallel unit, and can be formed synchronously with the first parallel unit and the second parallel unit, which will not be repeated here.

[0057] In an alternative embodiment, the IPD band-pass filter further comprises a first GSG assembly and a second GSG assembly, the first GSG assembly further comprises a first signal pad, and the second GSG assembly further comprises a second signal pad, the first signal pad and the second signal pad are formed when the second metal layer is formed, which will not be repeated here.

[0058] In summary, the embodiment of the present application provides a medium substrate layer to provide physical support and electrical isolation for the entire circuit structure, protects the circuit from the external environment, effectively prevents current leakage, ensures the normal operation of the circuit, and further forms a first metal layer to integrate multiple functional assemblies in the same layer, reduces the complexity and size of the circuit, improves the integration level, forms an intermediate layer on the MIM capacitor of the first metal layer to serve as an insulating medium for the MIM capacitor, effectively isolates the first electrode and the second electrode, ensures the safety and reliability of the circuit, improves the stability and precision of the MIM capacitor, and forms a second metal layer to thicken the metal layer by using the first metal layer and the second metal layer, thereby increasing the cross-sectional area of the transmission line, reducing the transmission loss of the radio frequency signal, compressing the size of the entire circuit, and realizing miniaturization.

[0059] Figure 4 An example of a schematic diagram of the physical structure of an electronic device is shown in FIG. 1. Figure 4As shown, the electronic device can include a processor 410, a communications interface 420, a memory 430, and a communications bus 440, wherein the processor 410, the communications interface 420, and the memory 430 communicate with each other through the communications bus 440. The processor 410 can invoke the logic instructions in the memory 430 to execute the method for manufacturing an IPD bandpass filter, which includes providing a silicon dielectric substrate layer and forming a metal ground layer on one side of the silicon dielectric substrate layer; forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line, and a first electrode of a first metal-insulator-metal (MIM) capacitor on the other side of the silicon dielectric substrate layer; forming an intermediate layer on the first electrode of the first MIM capacitor; and forming a second metal layer on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer, and the first conductive metal layer of the microstrip transmission line, wherein the second metal layer includes a second metal conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor, and a second conductive metal layer of the microstrip transmission line.

[0060] In addition, the logic instructions in the memory 430 described above can be implemented in the form of a software functional unit and sold or used as an independent product, which can be stored in a computer readable storage medium. Based on this understanding, the technical solutions of the present application or the part of the technical solutions that essentially contribute to the prior art or the part of the technical solutions can be embodied in the form of a software product, which is stored in a storage medium and includes a plurality of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in the various embodiments of the present application. The aforementioned storage medium includes a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and various program code storage media.

[0061] In another aspect, the present application also provides a computer program product, which comprises a computer program, the computer program being stored in a non-transitory computer readable storage medium, and the computer program being capable of executing the manufacturing method of the IPD band-pass filter provided by the above-mentioned methods when executed by a processor, the method comprising: providing a silicon dielectric substrate layer and forming a metal ground layer on one side of the silicon dielectric substrate layer; forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line, and a first electrode of a first metal-insulator-metal (MIM) capacitor on the other side of the silicon dielectric substrate layer; forming an intermediate layer on the first electrode of the first MIM capacitor; and forming a second metal layer on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer, and the first conductive metal layer of the microstrip transmission line, the second metal layer comprising a second metal conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor, and a second conductive metal layer of the microstrip transmission line.

[0062] In yet another aspect, the present application also provides a non-transitory computer readable storage medium, which stores a computer program, the computer program being capable of implementing the manufacturing method of the IPD band-pass filter provided by the above-mentioned methods when executed by a processor, the method comprising: providing a silicon dielectric substrate layer and forming a metal ground layer on one side of the silicon dielectric substrate layer; forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line, and a first electrode of a first metal-insulator-metal (MIM) capacitor on the other side of the silicon dielectric substrate layer; forming an intermediate layer on the first electrode of the first MIM capacitor; and forming a second metal layer on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer, and the first conductive metal layer of the microstrip transmission line, the second metal layer comprising a second metal conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor, and a second conductive metal layer of the microstrip transmission line.

[0063] The device embodiments described above are merely illustrative, wherein the units described as separate components can or can not be physically separate, and the components shown as units can or can not be physical units, i.e., can be located in one place, or can be distributed on multiple network units. Part or all of the modules can be selected to achieve the purpose of the present embodiment scheme according to actual needs. Those skilled in the art can understand and implement without creative labor.

[0064] Those skilled in the art can clearly understand the technical solutions of the various embodiments from the above description of the embodiments, and the various embodiments can be implemented by means of software with the necessary general hardware platforms, and of course, can also be implemented by hardware. Based on such understanding, the above technical solutions, essentially or in other words, the part of the prior art that makes a contribution, can be embodied in the form of a software product, which can be stored in a computer readable storage medium, such as a ROM / RAM, a magnetic disk, an optical disk, and the like, and includes a number of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0065] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for some technical features therein; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. An IPD bandpass filter, characterized by, The application relates to a radio frequency filter, comprising: a metal grounding layer and a silicon dielectric substrate layer arranged on the metal grounding layer; a first metal layer arranged on the silicon dielectric substrate layer, the first metal layer comprising a first metal conductive layer of a parallel connection component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line and a first electrode of a first metal-insulator-metal (MIM) capacitor; an intermediate layer arranged on the first electrode of the first MIM capacitor; a second metal layer arranged on the intermediate layer and the first metal layer, the second metal layer comprising a second metal conductive layer of the parallel connection component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor and a second conductive metal layer of the microstrip transmission line.

2. The IPD bandpass filter of claim 1, wherein, The parallel connection component comprises a first parallel connection unit and a second parallel connection unit, wherein: the first parallel connection unit is used for receiving a radio frequency signal input from an input end and performing low-pass filtering on the radio frequency signal to obtain a first filtered signal and output the first filtered signal; the first MIM capacitor is connected in series with the first parallel connection unit to receive the first filtered signal output by the first parallel connection unit and is connected in series with the second parallel connection unit to perform signal filtering and frequency selection on the received first filtered signal to obtain a second filtered signal and output the second filtered signal; the first planar spiral inductor is connected in parallel with the second parallel connection unit to filter a signal in a first target range of a preset frequency point in the second filtered signal and enhance the stopband attenuation of a signal in a second target range of the preset frequency point to obtain a third filtered signal and output the third filtered signal through the microstrip transmission line.

3. The IPD bandpass filter of claim 2, wherein, The first parallel connection unit comprises a second planar spiral inductor and a second MIM capacitor connected in parallel, the second parallel connection unit comprises a third planar spiral inductor and a third MIM capacitor connected in parallel, the second planar spiral inductor is connected to the input end, the second MIM capacitor is connected in parallel with the first MIM capacitor, the third planar spiral inductor is connected in series with the first MIM capacitor and in parallel with the first planar spiral inductor, and the third MIM capacitor is connected in series with the first MIM capacitor, wherein: the first metal conductive layer of the parallel connection component comprises a first electrode of the second MIM capacitor and a first electrode of the third MIM capacitor, and the intermediate layer is further arranged on the first electrode of the second MIM capacitor and the first electrode of the third MIM capacitor; the second metal conductive layer of the parallel connection component comprises a second electrode of the second MIM capacitor and a second electrode of the third MIM capacitor, the second electrode of the second MIM capacitor is arranged on the intermediate layer arranged on the first electrode of the second MIM capacitor, and the second electrode of the third MIM capacitor is arranged on the intermediate layer arranged on the first electrode of the third MIM capacitor; the first metal conductive layer of the parallel connection component further comprises a first conductive layer of the second planar spiral inductor and a first conductive layer of the third planar spiral inductor. The first metal conductive layer of the parallel assembly further comprises a second conductive layer of the second planar spiral inductor and a second conductive layer of the third planar spiral inductor, the second conductive layer of the second planar spiral inductor is located on the first conductive layer of the second planar spiral inductor, and the second conductive layer of the third planar spiral inductor is located on the first conductive layer of the third planar spiral inductor.

4. The IPD bandpass filter of claim 3, wherein, The IPD band-pass filter further comprises a first ground, signal, ground (GSG) assembly and a second GSG assembly, the first GSG assembly comprises a first ground pad and a first signal pad, the second GSG assembly comprises a second ground pad and a second signal pad, the first signal pad is connected with the second planar spiral inductor, and the second signal pad is connected with the microstrip transmission line, wherein: The first metal layer further comprises first conductive layers of the first signal pad, the first ground pad, the second signal pad and the second ground pad; The second metal layer further comprises second conductive layers of the first signal pad, the first ground pad, the second signal pad and the second ground pad.

5. The IPD bandpass filter of claim 3, wherein, The parallel assembly further comprises a third parallel unit, the third parallel unit is connected in series with the second parallel unit and in parallel with the first planar spiral inductor, so as to perform wideband processing and out-of-band suppression optimization on the third filtered signal.

6. The IPD bandpass filter of claim 5, wherein, The third parallel unit comprises a fourth planar spiral inductor and a fourth MIM capacitor connected in parallel, the fourth planar spiral inductor is connected in series with the third planar spiral inductor, and the fourth MIM capacitor is connected in parallel with the third MIM capacitor, so as to filter signals in a first target range of a preset frequency point in the second filtered signal to obtain a third filtered signal; The fourth planar spiral inductor is connected in parallel with the first planar spiral inductor, so as to enhance the stopband attenuation of signals in a second target range of the preset frequency point, wherein: The first metal conductive layer of the parallel assembly further comprises a first electrode of the fourth MIM capacitor and a first conductive layer of the fourth planar spiral inductor, and the intermediate layer is further arranged on the first electrode of the fourth MIM capacitor; The second metal conductive layer of the parallel assembly further comprises a second electrode of the fourth MIM capacitor and a second conductive layer of the fourth planar spiral inductor, the second electrode of the fourth MIM capacitor is arranged on the intermediate layer located on the first electrode of the fourth MIM capacitor, and the second conductive layer of the fourth planar spiral inductor is arranged on the first conductive layer of the fourth planar spiral inductor.

7. The IPD bandpass filter of claim 2, wherein, The first metal layer further comprises a first electrode of a fifth MIM capacitor, and the intermediate layer is further arranged on the first electrode of the fifth MIM capacitor; The second metal layer further comprises a second electrode of the fifth MIM capacitor, and the second electrode of the fifth MIM capacitor is arranged on the intermediate layer located on the first electrode of the fifth MIM capacitor.

8. The IPD bandpass filter of claim 1, wherein, The material of the first metal layer comprises at least one of chromium, gold and titanium; and / or, The material of the second metal layer comprises at least one of chromium, gold and titanium.

9. A method of manufacturing an IPD bandpass filter, characterized by, Comprise: providing a silicon dielectric substrate layer and forming a metal ground layer on one side of the silicon dielectric substrate layer; forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line and a first electrode of a first metal-insulator-metal (MIM) capacitor on the other side of the silicon dielectric substrate layer; forming an intermediate layer on the first electrode of the first MIM capacitor; forming a second metal layer on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer and the first conductive metal layer of the microstrip transmission line, the second metal layer comprising a second metal conductive layer of the parallel component, a second electrode of the first MIM capacitor, a second conductive layer of the first planar spiral inductor and a second conductive metal layer of the microstrip transmission line.

10. The method of manufacturing an IPD bandpass filter according to claim 9, wherein, forming a first metal conductive layer of a parallel component, a first conductive layer of a first planar spiral inductor, a first conductive metal layer of a microstrip transmission line and a first electrode of a first metal-insulator-metal (MIM) capacitor on a silicon dielectric substrate layer, comprising: forming a first metal layer on the silicon dielectric substrate layer using a sputtering process; patterning and etching the first metal layer to form the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line and the first electrode of the first MIM capacitor using a first mask pattern previously set based on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the first conductive metal layer of the microstrip transmission line and the first electrode of the first MIM capacitor; forming a second metal layer, comprising: forming a second metal layer on the first metal conductive layer of the parallel component, the first conductive layer of the first planar spiral inductor, the intermediate layer and the microstrip transmission line using a sputtering and electroplating process; patterning and etching the second metal layer to form the second metal conductive layer of the parallel component, the second electrode of the first MIM capacitor, the second conductive layer of the first planar spiral inductor and the second conductive metal layer of the microstrip transmission line using a second mask pattern previously set based on the second metal conductive layer of the parallel component, the second electrode of the first MIM capacitor, the second conductive layer of the first planar spiral inductor and the second conductive metal layer of the microstrip transmission line.

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