Semiconductor manufacturing apparatus and susceptor temperature field correction method

Abstract

The application provides a semiconductor manufacturing equipment and a susceptor temperature field correction method. By adding a heating lifting device, the current temperature difference of each substrate is obtained according to the current surface temperature and the target setting temperature of each substrate during the growth process. According to the first calibration relationship, the target substrate with temperature abnormality, the target pitch change amount corresponding to the target substrate and the predetermined adjustment direction are determined. Then, the heating lifting device is controlled to adjust the lifting according to the number and position of the target substrate, so that at least part of the area of the heating device moves the target pitch change amount in the predetermined adjustment direction or the opposite direction of the predetermined adjustment direction, thereby improving the temperature abnormality of the target substrate. Therefore, the uniformity of the susceptor surface temperature field can be corrected in real time, and the normal process is not disturbed.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor manufacturing device and a susceptor temperature field correction method. BACKGROUND

[0002] In a semiconductor manufacturing device, a susceptor is used to support a wafer, and a heating device is usually arranged below the susceptor to heat the susceptor and transfer heat from the susceptor to the wafer to meet the process temperature requirement. In order to obtain the temperature of the susceptor or wafer in real time, an optical probe is usually arranged above the susceptor, for example, a spray hole of a gas injection device is used as an optical channel, or an optical window is arranged on a top plate of a chamber above the susceptor, and a blackbody radiation principle is used to measure the temperature of the susceptor or the area where the wafer is located.

[0003] In some semiconductor manufacturing devices, for example, a MOCVD (metal organic chemical vapor deposition) device used for large-scale manufacturing of GaN (gallium nitride) or GaAs (gallium arsenide) thin film growth, a plurality of grooves are usually uniformly arranged on a susceptor in a circumferential direction to support and limit a wafer (such as a wafer), and the uniformity of the wavelength and thickness of the semiconductor material layer grown on the surface of the wafer in each groove is required to be higher and higher. The uniformity of the temperature field is an important factor affecting the performance uniformity.

[0004] The distance between the susceptor and the heating device has an important influence on the uniformity of the temperature field of each wafer surface. In the prior art, in order to achieve the temperature uniformity of the wafer surface, a specific structural region on the susceptor is usually designed or the material of the susceptor is selected to adapt to the distance characteristics between the susceptor and the heating device, so that different specific regions on the susceptor have different heat transfer characteristics. However, the implementation of the temperature uniformity of this scheme puts high requirements on the initial installation and positioning of the heating device, which increases the cost of process installation and debugging.

[0005] Moreover, different process controls will make the process gas flow field above the wafer have different influences on the wafer temperature, and even if different heat transfer characteristics are designed for different specific regions on the susceptor to adapt to the distance characteristics between the susceptor and the heating device, the influence of the process gas flow field on the wafer surface temperature cannot be solved.

[0006] In addition, due to the process requirement or the requirement of automatic wafer transfer, the susceptor is frequently controlled to rotate or lift. In the lifting process controlled by the lifting device, a servo motor drives a lead screw, and the lead screw drives a lifting bottom plate and a rotating device to move, so that the susceptor moves towards or away from the upper cover of the chamber. If the lifting device deviates from the horizontal due to lead screw slip, part damage, etc., the temperature uniformity will also be affected. In this application scenario, even if the temperature non-uniformity of the susceptor is monitored during the process, real-time intervention and adjustment cannot be realized under the premise of not stopping the machine. SUMMARY

[0007] In order to solve the problem that the existing semiconductor manufacturing equipment cannot realize real-time temperature field correction in a process, the present application provides a semiconductor manufacturing equipment and a susceptor temperature field correction method.

[0008] In order to achieve the above-mentioned purpose, the present application adopts the following technical solutions:

[0009] In a first aspect, the present application provides a susceptor temperature field correction method of a semiconductor manufacturing equipment, wherein the semiconductor manufacturing equipment comprises a chamber, a susceptor arranged in the chamber, a heating device arranged below the susceptor, a rotating device for driving the susceptor to rotate, a susceptor lifting device for driving the rotating device and the susceptor to lift, and a heating lifting device for driving the heating device to lift.

[0010] The susceptor temperature field correction method comprises:

[0011] S0: obtaining a first calibration relationship between a temperature difference of the susceptor and a variation amount of a distance between the heating device and the susceptor under different set temperatures;

[0012] S1: placing each wafer on the susceptor, controlling the susceptor lifting device to move so that the susceptor is located at a working position, and then controlling the rotating device to drive the susceptor to rotate to perform a growth process flow of a semiconductor material layer;

[0013] During the execution of the growth process flow in step S1, the following steps are further included:

[0014] S11: obtaining a current temperature difference of each wafer according to a current surface temperature and a target set temperature of each wafer, determining a target wafer with temperature abnormality, a target variation amount of the distance corresponding to the target wafer, and a predetermined adjustment direction according to the current temperature difference of each wafer and the first calibration relationship;

[0015] S12: controlling the heating lifting device to lift according to the number and position of the target wafers, so that at least part of the heating device moves the target variation amount of the distance in the predetermined adjustment direction or the opposite direction of the predetermined adjustment direction, to improve the temperature abnormality of the target wafer.

[0016] Further, the susceptor lifting device comprises a susceptor lifting bottom plate arranged on the rotating device, and a susceptor lifting mechanism arranged on the susceptor lifting bottom plate and a chamber bottom plate of the chamber around the rotating device, and in step S1, the susceptor is located at the working position by controlling the susceptor lifting mechanism to move.

[0017] Further, the heating lifting device comprises a heating support device fixed to the bottom of the heating device, a heating lifting bottom plate surrounding the heating support device, and a plurality of heating lifting mechanisms arranged on the heating lifting bottom plate and connected to the chamber bottom plate around the heating support device. In the static state of the base, the projection of the connection between each heating lifting mechanism and the chamber bottom plate on the load-bearing top surface of the base is a projection mark. In step S12:

[0018] According to the number, position and distance of the target substrate and each projection mark, a target heating lifting mechanism is determined, and the target heating lifting mechanism is controlled to perform the lifting adjustment.

[0019] Further, the number of the base lifting mechanism and the heating lifting mechanism is at least 3, and the projection mark of at least one heating lifting mechanism is located in each half area of the load-bearing top surface.

[0020] Further, in step S11, the number of target substrates is 1, and in step S12:

[0021] The heating lifting mechanism corresponding to the projection mark closest to the target substrate is selected as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to move in the predetermined adjustment direction;

[0022] When the number of projection marks closest to the target substrate is at least 2, at least one heating lifting mechanism corresponding to the closest projection mark is selected as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to move in the predetermined adjustment direction.

[0023] Further, the number of target substrates is at least 2;

[0024] When the absolute values of the current temperature differences of at least two target substrates are different, the target substrate with the largest absolute value of the temperature difference is selected as the priority target substrate, and in step S12, the heating lifting mechanism corresponding to the projection mark closest to the priority target substrate is selected as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to move in the predetermined adjustment direction;

[0025] When the absolute values of the current temperature differences of each target substrate are the same, in step S12, the heating lifting mechanism corresponding to the projection mark with the smallest distance between each priority target substrate is selected as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to move in the predetermined adjustment direction.

[0026] Further, the number of target substrates is at least 2 and the current temperature differences of each target substrate are the same, and in step S12:

[0027] When it is judged that the distances between each of the target substrates and the corresponding closest projection mark are consistent, the closest projection mark corresponding to each of the target substrates is acquired, and the heating lifting mechanism corresponding to each of the acquired projection marks is taken as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction.

[0028] Further, the number of the target substrates is at least two, and the current temperature differences of each of the target substrates are the same, and in step S12:

[0029] When it is judged that the distances between each of the target substrates and the corresponding closest projection mark are consistent, and each of the target substrates is located in the same half area of the plane where the bearing top surface is located, the heating lifting mechanism corresponding to at least one projection mark in the other half area of the plane where the bearing top surface is located is taken as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction.

[0030] Further, each of the target substrates is located in the same sector, the sector has the center of the bearing top surface as the center and the radius lines are respectively tangent to two of the target substrates, and the other half area of the plane where the bearing top surface is located includes a symmetric sector which is axially symmetric to the sector, and in step S12:

[0031] When there is at least one projection mark in the symmetric sector, the heating lifting mechanism corresponding to at least one projection mark in the symmetric sector is taken as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction.

[0032] When there is no projection mark in the symmetric sector, the heating lifting mechanism corresponding to at least one projection mark closest to the symmetric sector is taken as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction.

[0033] The central angle of the sector is not more than 60 degrees.

[0034] Further, in step S11:

[0035] When the temperature difference between the current surface temperature of the substrate and the target set temperature is positive, the predetermined adjustment direction is away from the area where the pedestal is located.

[0036] When the temperature difference between the current surface temperature of the substrate and the target set temperature is negative, the predetermined adjustment direction is close to the area where the pedestal is located.

[0037] In a second aspect, the present application provides a semiconductor manufacturing equipment, comprising:

[0038] A chamber, a base arranged in the chamber to carry substrates, and a heating device arranged between the base and a chamber bottom plate of the chamber;

[0039] The base comprises a base body and a base support device, the base support device is fixedly arranged in the middle of the base and movably penetrates the heating lifting device and extends out of the chamber;

[0040] The heating device comprises a heating body and a heating support device, the heating support device penetrates the chamber bottom plate and is supported at the bottom of the heating device;

[0041] A heating lifting device is located outside the chamber and surrounds the heating support device to drive the heating device to move up and down;

[0042] A rotating device is rotationally connected to the bottom of the base support device to drive the base to rotate;

[0043] A base lifting device is located outside the chamber and surrounds the rotating device to drive the base to move up and down;

[0044] A temperature measuring device is used to obtain the current surface temperature of each substrate;

[0045] A master control device is in communication connection with the heating lifting device, the rotating device, the base lifting device and the temperature measuring device to realize information interaction and corresponding function control, and prestores a target set temperature and a first calibration relationship;

[0046] The first calibration relationship is a corresponding relationship between the temperature difference of the base and the change amount of the distance between the heating device and the base at different set temperatures.

[0047] Further, the heating lifting device comprises:

[0048] A heating lifting bottom plate surrounds the heating support device;

[0049] A plurality of heating lifting mechanisms are arranged on the heating lifting bottom plate and connected to the chamber bottom plate, so that the heating support device and the heating device move up and down by driving the lifting movement of the heating lifting bottom plate.

[0050] Further, the base lifting device comprises:

[0051] A base lifting bottom plate surrounds the rotating device;

[0052] A plurality of base lifting mechanisms are arranged on the base lifting bottom plate and connected to the chamber bottom plate, so that the rotating device, the base support device and the base body move up and down by driving the lifting movement of the base lifting bottom plate.

[0053] Further, the base lifting mechanism comprises a plurality of first lead screws arranged uniformly around the area where the heating lifting mechanism is located, and a first lifting driving structure corresponding to each of the first lead screws; the heating lifting mechanism comprises a plurality of second lead screws arranged uniformly around the area where the heating support device is located, and a second lifting driving structure corresponding to each of the second lead screws.

[0054] Further, the rotating device comprises:

[0055] an outer housing;

[0056] a rotating shaft body, a dynamic seal penetrating through the outer housing, a top part connected with the base support device, and the base lifting bottom plate being arranged around the top protruding part of the rotating shaft body;

[0057] a rotating driving body rotatably connected with the bottom protruding part of the rotating shaft body.

[0058] Further, an elastic sealing member is arranged between the base lifting bottom plate and the chamber bottom plate to form a closed cavity, the top protruding part is accommodated in the closed cavity, and the base support device extends into the closed cavity and is connected with the top protruding part.

[0059] Further, an elastic sealing member is arranged between the heating lifting bottom plate and the chamber bottom plate to form a closed cavity, and the heating support device and the substrate support device extend into the closed cavity.

[0060] By adopting the above technical scheme, the semiconductor manufacturing equipment and the base temperature field correction method have the following beneficial effects:

[0061] The application can quickly adjust the uniformity of the temperature field of the susceptor by adjusting the distance between the heating device and the susceptor through the heating lifting mechanism when the temperature of the substrate is abnormal during the process. Specifically, first, the current temperature difference of each substrate is obtained according to the current surface temperature and the target set temperature of each substrate, and the target substrate with temperature abnormality, the target distance change amount corresponding to the target substrate and the predetermined adjustment direction are determined according to the current temperature difference and the first calibration relationship; then, the heating lifting device is controlled to adjust the lifting according to the number and position of the target substrate, so that at least part of the area of the heating device moves the target distance change amount in the predetermined adjustment direction or the opposite direction of the predetermined adjustment direction, so as to improve the temperature abnormality of the target substrate. It can be seen that the application can realize real-time correction of the distance between the susceptor and the heating device by controlling the heating lifting device to adjust the pose of the heating device without interrupting the process, thereby improving the uniformity of the temperature field on the surface of the susceptor without interfering with the normal process. BRIEF DESCRIPTION OF DRAWINGS

[0062] Figure 1A It is a schematic diagram of the overall structure of the semiconductor manufacturing equipment of the application;

[0063] Figure 1B It is a schematic diagram of the local structure of the semiconductor manufacturing equipment of the application;

[0064] Figure 2 It is a schematic diagram of the measurement track of each optical probe in the application;

[0065] Figure 3 It is a flowchart of the step of obtaining the first calibration relationship in step S0 in the application;

[0066] Figure 4 It is a flowchart of the temperature field correction in step S1 in the application;

[0067] Figure 5 It is a schematic diagram of the positioning measurement point in the application;

[0068] Figure 6 It is a schematic diagram of obtaining the target substrate in the application;

[0069] Figure 7A It is a schematic diagram of determining the target heating lifting mechanism in one embodiment of the application;

[0070] Figure 7B It is a schematic diagram of determining the target heating lifting mechanism in another embodiment of the application;

[0071] Figure 7C It is a schematic diagram of determining the target heating lifting mechanism in another embodiment of the application. Detailed Implementation

[0072] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0073] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Although the illustrations only show components related to the present invention and are not drawn according to the actual number, shape and size of the components, the shape, quantity, positional relationship and proportion of each component can be arbitrarily changed under the premise of realizing the technical solution of this invention, and the layout of the components may also be more complex.

[0074] As mentioned earlier, in existing semiconductor manufacturing equipment, even if uneven substrate temperature is detected during the process, it is impossible to intervene and adjust it in real time without stopping the machine.

[0075] In view of this, the present invention provides a semiconductor manufacturing equipment and a substrate temperature field correction method to adjust the uniformity of the substrate surface temperature field in real time without stopping the machine, thereby improving the yield of epitaxial growth without interfering with the normal process.

[0076] The semiconductor manufacturing equipment provided by this invention can be a chemical vapor deposition (CVD) device, and more specifically, a plasma-enhanced chemical vapor deposition (PECVD) device, a metal-organic chemical vapor deposition (MOCVD) device, etc. The semiconductor manufacturing equipment provided in this embodiment of the invention implements epitaxial growth processes. It should be understood that this equipment is merely exemplary.

[0077] In this invention, the semiconductor manufacturing equipment includes: a chamber, a base disposed within the chamber, a heating device disposed below the base, a rotating device for driving the base to rotate, a base lifting device for driving the rotating device and the base to rise and fall, and a heating lifting device for driving the heating device to rise and fall.

[0078] Based on the aforementioned semiconductor manufacturing equipment, the substrate temperature field correction method provided by this invention includes:

[0079] S0: Obtain the first calibration relationship between the temperature difference of the base and the change in the distance between the heating device and the base under different set temperatures;

[0080] S1: Place each substrate on the base, control the base lifting device to move the base to the working position, and then control the rotation device to drive the base to rotate in order to execute the semiconductor material layer growth process.

[0081] Step S1, during the execution of the growth process, also includes the following temperature field correction step:

[0082] S11: Obtain and determine the current temperature difference of each substrate based on the current surface temperature of each substrate and the target set temperature, and determine the target substrate with abnormal temperature, the change in target spacing corresponding to the target substrate, and the predetermined adjustment direction based on the current temperature difference and the first calibration relationship.

[0083] S12: The heating lifting device is adjusted according to the number and position of the target substrates so that at least a part of the heating device moves in the predetermined adjustment direction or the opposite direction of the predetermined adjustment direction by the target spacing change, so as to improve the abnormal temperature phenomenon of the target substrates.

[0084] The following combination Figures 1A-7C The technical solution of this application will be described in detail through various specific embodiments.

[0085] Example 1

[0086] like Figure 1A and Figure 1B As shown, the semiconductor process equipment of this embodiment includes a chamber 1, a base 2, a heating device 3, a heating support device 4, a heating lifting device 5, a base support device 6, a rotating device 7, a base lifting device 8, and a main control device (not shown). The corresponding growth process is performed on the substrate within the chamber 1; the base 2 is disposed within the chamber 1 to support the substrate; the heating device 3 is disposed between the base 1 and the chamber floor 11 of the chamber 1; the heating support device 4 penetrates the chamber floor 11 and is supported at the bottom of the heating device 3; the heating lifting device 5 is located outside the chamber 1 and surrounds the heating support device 4 to drive the heating device 3 to move up and down; the base support device 6 is fixedly disposed in the middle of the base 1 and movably passes through the heating lifting device 4 and extends outside the chamber 1; the rotating device 7 is rotatably connected to the bottom of the base support device 6 to drive the base 2 to rotate; the base lifting device 8 is located outside the chamber 1 and surrounds the rotating device 7 to drive the base 2 to move up and down.

[0087] In some embodiments, the substrate is a wafer.

[0088] In some embodiments, the base 2 is disc-shaped, with its top surface facing the top of the chamber 1 and having multiple circumferentially evenly distributed grooves 20 (see...). Figure 2 Each groove 20 is used to hold a substrate for housing and positioning, so that the substrate can rotate with the base 2.

[0089] In some embodiments, the base 2 is preferably made of graphite material and has a disc shape.

[0090] In some embodiments, the surface of the base 2 made of graphite material is covered with a silicon carbide layer.

[0091] During the process, the rotation device 7 is controlled to rotate the base 2 carrying the substrate, thereby facilitating process uniformity. As shown in Figure 1A The base 2 is supported in the chamber 1 by the base support device 6, and the rotation device 7 is connected to the bottom end of the base support device 6 to rotate the base support device 6 and the base 2, thereby rotating the substrate with the base 2.

[0092] In some embodiments, the base support device 6 penetrates the heating support device 4 along the axial direction of the heating support device 4 and has a spacing between the base support device 6 and the heating support device 4, so that the base support device 6 can move relative to the heating support device 4 under the driving of the rotation device 7, and the base support device 6 and the heating support device 4 do not interfere with each other.

[0093] In some embodiments, the base support device 6 penetrates the heating support device 4 in a dynamic sealing manner, so that the base support device 6 and the heating support device 4 do not interfere with each other.

[0094] In some embodiments, the base support device 6 is arranged at the middle of the bottom surface of the base 2, extends towards and is connected to the rotation device 7, so as to drive the base 2 to rotate in a central manner.

[0095] In order to control the base 2 to rise to the transmission position when transmitting the substrate and to drop to the working position when performing the process, the base lifting device 8 is arranged to drive the base 2 to rise or drop.

[0096] In some embodiments, the base lifting device 8 includes a base lifting bottom plate 81 and a plurality of base lifting mechanisms 82. The base lifting bottom plate 81 surrounds the rotation device 7, and the plurality of base lifting mechanisms 82 are arranged on the base lifting bottom plate 81 and connected to the chamber bottom plate 11, so as to drive the base lifting bottom plate 81 to rise and drop, and the rotation device 7, the base support device 6 and the base 2 rise and drop accordingly. By using the base lifting device 8, the heavy load of the base 2, the base support device 6 and the rotation device 7 can stably rise and drop, and the reliability and repeatability of the process are ensured. In step S1, the base 2 is located at the working position by controlling the movement of the base lifting mechanism 82.

[0097] In the embodiment, in order to realize the accurate control of the temperature of the substrate, a heating device 3 is arranged below the susceptor 2 to heat the susceptor 2, and the susceptor 2 transmits heat to the substrate to realize the temperature control. The distance between the susceptor 2 and the heating device 3 has an important influence on the uniformity of the temperature field on the surface of the susceptor 2.

[0098] However, the susceptor 2 needs to be frequently rotated or lifted due to the process requirements or the automatic substrate transfer requirements. In the lifting process, if the susceptor lifting mechanism slips or the parts are damaged, the levelness of the susceptor 2 deviates, and the heating device 3 is not parallel, which further affects the temperature uniformity. Although the temperature is monitored in real time during the temperature control, and the heating power is adjusted to realize the real-time temperature control of the susceptor temperature field, this method is not conducive to the rapid realization of the temperature balance state.

[0099] Meanwhile, considering that some processes require a high rotation speed of the susceptor 2, it is risky to adjust the high rotation speed of the susceptor 2 in real time, which is easy to cause the substrate to fly or the susceptor to shake and make the rotation unstable. Therefore, the embodiment adds a heating lifting device 5 to adjust the distance between the heating device 3 and the susceptor 2, so as to facilitate the rapid adjustment of the uniformity of the susceptor temperature field.

[0100] In some embodiments, the heating lifting device 5 penetrates the chamber bottom plate 11 in a dynamic sealing manner to ensure the air tightness of the inside of the chamber 1.

[0101] In some embodiments, the heating lifting device 5 includes a heating lifting bottom plate 51 and a plurality of heating lifting mechanisms 52. The heating lifting bottom plate 51 is arranged around the heating support device 4, and the plurality of heating lifting mechanisms 52 are arranged on the heating lifting bottom plate 51 and connected to the chamber bottom plate 11, so as to drive the lifting movement of the heating lifting bottom plate 51, and make the heating support device 4 and the heating device 3 move up and down. By using the heating lifting device 5, when the temperature of the substrate is monitored to be abnormal, the position of the heating device 3 corresponding to the substrate is adjusted to be away from or close to the susceptor, the local heat conduction efficiency is changed, the temperature correction is realized, and the process is repeated until all the substrates meet the temperature uniformity requirements.

[0102] In some embodiments, the number of heating lifting mechanisms 52 is at least 3, so as to realize the face inclination adjustment. The number of susceptor lifting mechanisms 82 is at least 3, so as to realize the stable lifting.

[0103] In some embodiments, the heating lifting mechanism 52 and the susceptor lifting mechanism 82 both adopt a lead screw lifting mechanism. The lead screw lifting mechanism is a mechanical structure for converting rotary motion into linear motion, which can realize high-precision displacement control, so as to facilitate high-precision temperature control. Moreover, the lead screw lifting mechanism has high carrying capacity, and is suitable for supporting and lifting the susceptor 2, the heating device 3 and other components with large weight, so as to ensure smooth operation and no risk of falling.

[0104] In some embodiments, the base lifting mechanism 82 comprises a plurality of first lead screws 821 evenly arranged around the area where the heating lifting mechanism 52 is located, and the heating lifting mechanism 52 comprises a plurality of second lead screws 521 evenly arranged around the area where the heating support device 4 is located. This layout is compact in structure, high in space utilization, easy to install, debug and maintain, and reduces the complexity and manufacturing cost of the equipment.

[0105] In some embodiments, the base lifting mechanism 82 further comprises a first lifting driving structure 822 corresponding to each first lead screw 821, and the heating lifting mechanism 52 further comprises a second lifting driving structure 522 corresponding to each second lead screw 521. By providing each lead screw with an independent lifting driving structure, the precision and independence of lifting control are improved, which is conducive to achieving more precise temperature regulation.

[0106] In some embodiments, the radial dimension of the base lifting bottom plate 81 is greater than the radial dimension of the heating lifting bottom plate 51, and each first lead screw 821 is arranged around the area where the heating lifting bottom plate 51 is located. This layout further optimizes the spatial layout, which is conducive to avoiding motion interference with other functional structures, such as exhaust pipes, provided on the bottom surface of the chamber, and enhances the structural stability and motion coordination.

[0107] In some embodiments, each first lead screw 821 and each second lead screw 521 are arranged one-to-one, and the center of the orthographic projection of a second lead screw 521 on the chamber bottom plate 11 is located on the line connecting the center of the orthographic projection of the corresponding first lead screw 821 on the chamber bottom plate 11 and the center of the chamber bottom plate 11. That is, the first lead screw 821 and the corresponding second lead screw 521 are arranged radially along the chamber bottom plate 11. This layout makes it easier to adjust the base lifting bottom plate 81 and the heating lifting bottom plate 51 to be parallel, which is conducive to simplifying the control logic of temperature regulation and reducing the complexity of the temperature regulation algorithm.

[0108] In some embodiments, the rotating device 7 comprises an outer housing 71, a rotating shaft body 72, and a rotating driving body 73. The rotating shaft body 72 penetrates the outer housing 71 and is connected to the base support device 6 at the top, and the base lifting bottom plate 81 is arranged around the outer housing 71 and protrudes around the top protruding part of the rotating shaft body 72 (i.e., the part protruding from the top of the outer housing 71); the rotating driving body 73 is rotationally connected to the bottom protruding part of the rotating shaft body 72 (i.e., the part protruding from the bottom of the outer housing 71). This layout realizes the spatial separation and structural integration of the rotating and lifting functions, and the dynamic sealing design ensures the vacuum of the chamber 1, while the top protrusion of the rotating shaft body 72 facilitates direct connection with the base support device 6, improving the transmission efficiency and concentricity.

[0109] In the present embodiment, dynamic sealing refers to sealing between two components with relative motion, which prevents fluid from leaking from the gap while allowing relative motion (such as rotation, reciprocating motion, etc.) between the components.

[0110] In some embodiments, an elastic sealing member 8 is arranged between the susceptor lifting base plate 81 and the chamber bottom plate 11 to form a closed cavity in which the top protruding portion of the rotating shaft body 72 is accommodated, and the susceptor support device 6 extends into the closed cavity and is connected to the top protruding portion of the rotating shaft body 72. Thus, the air tightness of the chamber 1 is further ensured.

[0111] In some embodiments, an elastic sealing member 8 is arranged between the heating lifting base plate 51 and the chamber bottom plate 11 to form a sealed cavity, and the heating support device 4 and the susceptor support device 6 extend into the sealed cavity. Thus, the air tightness of the chamber 1 is further ensured.

[0112] In some embodiments, the elastic sealing member 9 is a bellows.

[0113] In some embodiments, the semiconductor process equipment further comprises a temperature measuring device to obtain the current surface temperature of the substrate or the susceptor, to determine the target substrate with temperature anomaly by monitoring the temperature change of different substrates, and to adjust the corresponding target heating lifting mechanism, so that the substrate with temperature anomaly can be corrected while reducing or even avoiding the influence on other normal temperature substrates.

[0114] In some embodiments, the temperature measuring device is an optical temperature measuring device. The optical temperature measuring device comprises at least one optical probe arranged above the chamber 1, and a signal processing unit connected to the optical probe through an optical fiber. The optical probe collects the thermal radiation signal of the substrate or the susceptor 2 through the optical window of the upper cover of the chamber 1 or the spray hole of the gas injection device. The signal processing unit is used to convert the collected signal of the corresponding optical probe into the corresponding temperature value. The specific implementation manner is a conventional technical means in the art, which is not described here.

[0115] In some embodiments, the signal processing unit is a photodetector.

[0116] In some embodiments, when there are multiple optical probes, the distances from different optical probes to the central axis of the susceptor 2 are different, and preferably distributed along the radial direction of the susceptor 2. Thus, as shown in Figure 2 , when the susceptor 2 rotates, the measurement trajectories of different optical probes have different radii, but the measurement trajectories of all optical probes pass through the groove 20, i.e., pass through the substrate, so as to realize real-time collection of the temperature of the substrate area.

[0117] In some embodiments, as shown in Figure 2As shown, the measurement trajectories of the optical probes do not exceed the inner scanning boundary L1 and the outer scanning boundary L2. The inner scanning boundary L1 is a circular boundary with the center axis of the susceptor 2 as the center and connected to the point of each groove 20 closest to the center axis of the susceptor. The outer scanning boundary L2 is a circular boundary with the center axis of the susceptor 2 as the center and connected to the point of each groove 20 farthest from the center axis of the susceptor.

[0118] In some embodiments, the lifting control, rotation control, and temperature field correction of the susceptor 2 are controlled by the host device. The host device is in communication connection with the heating lifting device 5, the rotation device 7, the susceptor lifting device 6, and the temperature measuring device to realize information interaction and corresponding function control.

[0119] In some embodiments, the host device pre-stores the first calibration relationship.

[0120] Specifically, the first calibration relationship is the corresponding relationship between the calibration temperature difference of the susceptor 2 and the distance change amount between the heating device 3 and the susceptor 2 at different set temperatures.

[0121] In some embodiments, the host device monitors and controls the growth process of the semiconductor material layer.

[0122] After the substrates are placed on the susceptor 2, the host device controls the semiconductor manufacturing equipment to perform the growth process on the substrates. During the growth process, the rotation device 7 drives the susceptor 2 to rotate, and the following temperature field correction steps are performed: first, the current temperature difference of each substrate is obtained according to the current surface temperature and the target set temperature of each substrate, and the target substrate with temperature abnormality, the target distance change amount corresponding to the target substrate, and the predetermined adjustment direction are determined according to the first calibration relationship; then, the heating lifting device is controlled according to the number and position of the target substrates to perform lifting adjustment, so that at least part of the area of the heating device moves the target distance change amount in the predetermined adjustment direction or the opposite direction of the predetermined adjustment direction, to improve the temperature abnormality of the target substrate, thereby realizing the temperature field uniformity correction.

[0123] Embodiment 2

[0124] This embodiment provides specific implementation steps for obtaining the first calibration relationship. As described above, the first calibration relationship is the corresponding relationship between the calibration temperature difference of the susceptor 2 and the distance change amount between the heating device 3 and the susceptor 2 at different set temperatures.

[0125] It should be understood that when calibrating the first calibration relationship, the working distance is used as the reference basis for the distance change amount between the susceptor 2 and the heating device 3. The process distance refers to the distance between the susceptor 2 and the heating device 3 during the process.

[0126] To facilitate understanding of the working distance, first introduce the control process of the growth process. The main control device pre-stores process program information, which includes steps for performing a wafer transfer preparation step, moving the coated substrate out, and transferring the to-be-coated substrate onto the susceptor 2, performing an epitaxial growth process preparation step, and performing an epitaxial growth process. Specifically, during the epitaxial growth process, the susceptor 2 and the heating device 3 should be separated by a process distance. After one round of epitaxial growth process is completed, the main control device controls the gas injection device to provide a chemically inert purge gas into the chamber 1, controls the rotation device 7 to stop rotating so that the susceptor 2 is in a stationary state, and controls the heating device 3 to stop working to cool down to a wafer transfer temperature. After the internal and external pressures of the chamber 1 are equalized, the main control device controls the wafer transfer port of the chamber 1 to be in an open state, controls the susceptor 2 to rise to a wafer transfer position opposite to the wafer transfer port, transfers the coated substrate out of the susceptor 2, transfers the to-be-coated substrate into the susceptor 2 from the wafer transfer port, and then controls the susceptor 2 to descend to a process position (separated from the heating device 3 by a process distance). After the main control device controls the wafer transfer port to be in a closed state, the gas injection device and the exhaust device are controlled to make the pressure in the chamber 1 reach a process pressure, the heating device 3 is controlled to meet the process temperature requirement, the susceptor 2 is driven to rotate, and then the gas injection device provides process gas for epitaxial growth into the chamber 1 to perform the growth process.

[0127] As shown in Figure 3 , the step of obtaining the first calibration relationship specifically includes:

[0128] S01: control the heating device 3 to heat the susceptor 2 according to the corresponding heating power at a set temperature until the susceptor 2 reaches a temperature steady state, and obtain an initial steady-state temperature of the susceptor 2;

[0129] S02: maintain the heating power of the heating device 3 unchanged, and control each heating lifting mechanism 52 to synchronously rise or descend by a certain distance;

[0130] S03: obtain a current steady-state temperature of the susceptor 2, obtain a calibration temperature difference according to the current steady-state temperature and the initial steady-state temperature of the susceptor 2, obtain a displacement change amount of each heating lifting mechanism 52, and obtain a distance change amount according to the displacement change amount of each heating lifting mechanism 52 and the process distance;

[0131] S04: control each heating lifting mechanism 52 to continue to synchronously rise or descend by a certain distance;

[0132] S05: repeat steps S03 to S04 until the susceptor 2 is controlled to rise or descend to a corresponding position threshold, so as to obtain a corresponding relationship between the calibration temperature difference (ΔT1, ΔT1, …, ΔTm) and the distance change amount (Δh1, Δh1, …, Δhm) of the susceptor 2 at the set temperature.

[0133] It should be understood that the set temperature in the calibration process should be consistent with the set temperature in the process. In some embodiments, it is preferred to control the base 2 to rise for calibration to avoid the situation that the base 2 is prone to motion interference with the heating device 3 due to continuous descent.

[0134] In some embodiments, for the epitaxial growth process with very high temperature control accuracy requirements, in order to ensure the effectiveness and rapid controllability of the heat transfer from the heating device 3 to the base 2, the distance between the heating device 3 and the base 2 is generally not large, usually 4-6 mm. In this case, in order to avoid the calibration of the base 2 descending being limited by the distance between the base 2 and the heating device 3 and being unable to obtain complete data, the calibration of the base 2 descending can be performed after the base 2 is first raised to the upper limit position.

[0135] In some embodiments, in the step of obtaining the first calibration relationship, the distance between the base 2 and the heating device 3 is controlled to be not less than the minimum process distance, so as to avoid motion interference between the base 2 and the heating device 3, thereby protecting the safety of the two. Wherein, the process distance is greater than the minimum process distance.

[0136] Embodiment 3

[0137] This embodiment provides a temperature field correction step that is synchronously performed during the process of performing the growth process in step S1, as shown in Figure 4 specifically comprising:

[0138] S11: obtaining and obtaining the current temperature difference of each wafer according to the current surface temperature and the target set temperature of each wafer, and determining the target wafer with temperature abnormality, the target distance change amount corresponding to the target wafer and the predetermined adjustment direction according to the current temperature difference and the first calibration relationship;

[0139] S12: controlling the heating lifting device to adjust the lifting according to the number and position of the target wafer, so that at least part of the area of the heating device moves the target distance change amount in the predetermined adjustment direction or the opposite direction of the predetermined adjustment direction, to improve the temperature abnormality phenomenon of the target wafer.

[0140] Specifically, the base 2 is in a stationary state, and the orthographic projection of the connection between each heating lifting mechanism 52 and the chamber bottom 11 plate on the load-bearing top surface of the base 2 is recorded as a projection mark. Then, in step S12, the target heating lifting mechanism is determined according to the number, position and proximity of the target wafer to each projection mark, and the target heating lifting mechanism is controlled to perform the aforementioned lifting adjustment.

[0141] This embodiment solves the problem of partial wafer being too high or too low by performing local micro-lifting of the heating device 3 for real-time temperature compensation during the process, improves the consistency of the thickness, composition and light-emitting wavelength of the epitaxial layer, and improves the batch yield without stopping and breaking the vacuum.

[0142] Specifically, step S11, obtaining the current surface temperature of each substrate, includes: calculating the average temperature value of the corresponding substrate area currently measured by the optical temperature measuring device, and using the average temperature value as the current surface temperature of the corresponding substrate.

[0143] Typically, multiple substrates are supported on the base 2. Figure 2 In the example shown, 12 substrates are evenly distributed circumferentially. To accurately identify the current measurement position of the optical probe, this embodiment provides an angle origin mark 10 on the base 2. This angle origin mark 10 marks the beginning of each scanning cycle, i.e., the scanning angle origin. The measurement position of the optical probe can be determined based on the angle between the line connecting the measurement point on the measurement trajectory and the center of the base 2, and the line connecting the angle origin mark 10 and the center of the base 2 (see...). Figure 5 The angle formed by the two green lines in the middle is used to define it.

[0144] In some embodiments, the angular origin mark 10 may be a notch, a protrusion, or any other form, and this embodiment does not impose any specific limitations on it.

[0145] During the rotation of base 2, the optical probe continuously scans the surface of base 2 or the substrate, forming images such as... Figure 5 The scanning trajectory is shown, and a series of temperature data points are acquired. Each temperature data point is timestamped and includes the current angular position information of the base 2. Since the circumferential position of each substrate on the base 2 is pre-set and known, the main control device can map the scanned temperature data points onto the corresponding substrate after establishing an absolute angular coordinate system through the angular origin marker 10. For example, if the center of one substrate is known to be located at 30 degrees from the angular origin marker (i.e., the angle between the line connecting the center of the substrate and the center of the base, and the line connecting the angular origin marker 10 and the center of the base is 30 degrees), then all temperature data collected within the range of 30 degrees ± Δθ can be attributed to the substrate region corresponding to that substrate, where Δθ is a preset offset angle threshold.

[0146] In other embodiments, it is not necessary to create an angle origin mark on the base 2. The drive unit 73 of the rotating device 7 (such as a servo motor) is typically equipped with an encoder that generates a Z-phase pulse signal (or Home signal) to indicate the absolute position of the motor rotor, thereby locating the measurement position of the optical probe. The specific implementation method is a conventional technique in the art.

[0147] In step S11, the specific process of determining the target substrate with temperature anomalies, the corresponding change in target spacing, and the predetermined adjustment direction based on the current temperature differences and the first calibration relationship is as follows:

[0148] Firstly, it is judged whether the current temperature difference of each substrate is within the preset temperature difference range. If not, the substrate whose current temperature difference exceeds the preset temperature difference range is taken as a target substrate of temperature anomaly, so as to realize subsequent targeted temperature correction.

[0149] As shown in Figure 6 , each black dot represents a substrate, Test represents a target setting temperature, the preset temperature difference range includes the range between the upper limit error and the lower limit error, and then Figure 6 , the current temperature difference of two substrates exceeds the preset temperature difference range, so there are two target substrates, and the current temperature difference of the substrate framed by the red box is larger in absolute value.

[0150] In some embodiments, the upper limit error and the lower limit error are both not higher than 0.5 degrees Celsius.

[0151] Then, according to the current temperature difference of the target substrate and the first calibration relationship, the target interval change amount corresponding to the target substrate is determined. Specifically, the current temperature difference of the target substrate is matched with the calibration temperature difference of the pedestal 2 in the first calibration relationship, and the interval change amount corresponding to the matched calibration temperature difference is taken as the target interval change amount corresponding to the target substrate.

[0152] Finally, it is judged whether the temperature difference between the current surface temperature of the target substrate and the target setting temperature is positive or negative. When the temperature difference between the current surface temperature of the target substrate and the target setting temperature is positive, it indicates that the temperature of the target substrate is too high, and the predetermined adjustment direction is away from the region where the pedestal 2 is located; when the temperature difference between the current surface temperature of the substrate and the target setting temperature is negative, it indicates that the temperature of the target substrate is too low, and the predetermined adjustment direction is close to the region where the pedestal 2 is located.

[0153] In Figures 7A-7C , the substrate is exemplarily shown as 12, and is respectively marked as substrate A~substrate L. The projection of the connection between the heating lifting mechanism 52 and the chamber bottom plate 11 of the chamber 1 towards the plane where the bearing top surface of the pedestal 2 is located is a projection mark (respectively marked as 5A, 5B, 5C), and each projection mark is uniformly distributed along the same circumference on the plane where the bearing top surface is located.

[0154] In some embodiments, there is at least one projection mark of the heating lifting mechanism 52 in each half region of the bearing top surface of the pedestal 2.

[0155] In some embodiments, the number of target substrates obtained in step S11 is 1, the projection mark corresponding to the heating lifting mechanism 52 closest to the target substrate is taken as a target heating lifting mechanism in step S12, and the target heating lifting mechanism is controlled to move along the predetermined adjustment direction.

[0156] In Figure 7AFor example, assuming substrate A is the target substrate and its closest projection mark 5A is the heating and lifting mechanism 52 corresponding to projection mark 5A, then the heating and lifting mechanism 52 is determined as the target heating and lifting mechanism. That is, when only one substrate has an abnormal temperature, the heating and lifting mechanism 52 closest to it is directly selected as the target heating and lifting mechanism for single-point motion compensation. The algorithm is simple, has the fastest response, and avoids excessive linkage that causes temperature drift of other substrates.

[0157] When step S12 obtains at least two projection marks closest to the target substrate, at least one heating and lifting mechanism 52 corresponding to the closest projection mark is selected as the target heating and lifting mechanism, and the target heating and lifting mechanism is controlled to move along a predetermined adjustment direction. For example, the heating and lifting mechanism 52 corresponding to the closest projection mark can be selected as the target heating and lifting mechanism by means of a predetermined priority algorithm or by any other means, but it is not limited to this.

[0158] In some embodiments, the number of target substrates is at least 2, and the absolute values ​​of the current temperature difference of at least two target substrates are different. The target substrate with the largest absolute value of temperature difference is selected as the priority target substrate. In step S12, the heating lifting mechanism 52 corresponding to the projection mark closest to the priority target substrate is selected as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run along a predetermined adjustment direction.

[0159] like Figure 6 As shown, the substrate with the largest absolute error value is identified by the red box, and this substrate is determined as the priority target substrate. The heating and lifting mechanism 52 corresponding to the projection mark closest to this substrate is taken as the target heating and lifting mechanism.

[0160] That is, in scenarios where multiple substrates are abnormal and the absolute values ​​of temperature differences are inconsistent, the substrate with the largest temperature difference is compensated first, so that the system can correct the most abnormal substrate with the fewest number of actions and the fastest speed, thus shortening the correction time.

[0161] In some embodiments, the number of priority target substrates is at least 2, and the absolute value of their current temperature difference is the same. In step S12, the heating lifting mechanism 52 corresponding to the projection mark with the smallest distance between each priority target substrate is selected as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run along a predetermined adjustment direction.

[0162] by Figure 7BFor example, substrate A and substrate C are both priority target substrates, and the absolute value of their current temperature difference is the same. The projection mark closest to substrate A is projection mark 5A, and the projection mark closest to substrate C is projection mark 5B. The distance between substrate A and projection mark 5A is less than the distance between substrate C and projection mark 5B. Therefore, for substrate A and substrate C, substrate A is adjusted with more priority. Thus, the heating and lifting mechanism 52 corresponding to the projection mark 5A closest to substrate A is selected as the target heating and lifting mechanism to avoid mechanical lag and over-adjustment caused by choosing the farthest one, and to maintain adjustment accuracy.

[0163] In some embodiments, the number of target substrates is at least 2 and their current temperature difference is the same. After determining that the distance between each target substrate and the corresponding closest projection mark is consistent, step S12 obtains the closest projection mark corresponding to each target substrate, and uses the heating lifting mechanism 52 corresponding to each obtained projection mark as the target heating lifting mechanism, and controls the target heating lifting mechanism to run along the predetermined adjustment direction.

[0164] In some embodiments, the number of target substrates is at least 2 and their current temperature difference is the same. In step S12, when it is determined that the distance between each target substrate and the corresponding closest projection mark is consistent and they are located in the same half of the plane where the top surface is located, the heating lifting mechanism 52 corresponding to at least one projection mark in the other half of the plane where the top surface is located is used as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction. Due to the symmetry, the target substrate will run in the predetermined adjustment direction.

[0165] Therefore, by utilizing the symmetrical half-zone reverse compensation strategy, the temperature deviation of the symmetrical area can be balanced by the remote heating lifting mechanism 52 without adding hardware.

[0166] In some embodiments, each target substrate is located in the same sector, the sector is centered on the center of the top surface, and the radius line is externally tangent to the two target substrates respectively. The other half of the plane where the top surface is located includes a symmetrical sector that is symmetrical to the sector axis. In step S12:

[0167] When there is at least one projection mark in the symmetrical sector, the heating and lifting mechanism 52 corresponding to the at least one projection mark in the symmetrical sector is used as the target heating and lifting mechanism, and the target heating and lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction. Due to the symmetrical relationship, the target substrate will run in the predetermined adjustment direction.

[0168] by Figure 7C For example, if substrate B and substrate C are located in the same sector, and there is a projection mark 5C in the symmetrical sector of this sector, then the heating and lifting mechanism 52 corresponding to the projection mark 5C in the symmetrical sector is used as the target heating and lifting mechanism. Thus, the temperature correction of the two substrates can be achieved by adjusting one through reverse compensation.

[0169] When there is no projection mark in the symmetric sector, then the target heating lifting mechanism is the heating lifting mechanism corresponding to the projection mark closest to the symmetric sector, and the target heating lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction.

[0170] In some embodiments, the central angle of the sector is no more than 60 degrees.

[0171] In some embodiments, before the epitaxial process flow of step S1, the susceptor 2 has an initial horizontal position, and the susceptor 2 has a process spacing with the heating device 3. During any of the processes of step S1, step S11, and step S12, it is determined whether the vertical distance of one side of the susceptor 2 relative to the initial horizontal position exceeds a preset distance threshold value, and / or whether the minimum value of the process spacing is lower than a minimum process spacing. If so, the target heating lifting mechanism is controlled to stop running.

[0172] Therefore, through the minimum spacing limitation, it is ensured that the temperature field correction process will not cause mechanical interference, the service life of the heating device 3 and the susceptor 2 is prolonged, and the maintenance downtime is reduced.

[0173] In some embodiments, the preset distance threshold value is no more than 0.5 millimeters.

[0174] In some embodiments, the minimum process spacing is no less than 4 millimeters.

[0175] Although the specific embodiments of the present application are described above, those skilled in the art should understand that this is only an example, and the protection scope of the present application is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of the present application, and such changes and modifications all fall within the protection scope of the present application.

Claims

1. A method for correcting the base temperature field of a semiconductor manufacturing equipment, characterized in that, The semiconductor manufacturing equipment includes: a chamber, a base disposed within the chamber, a heating device disposed below the base, a rotating device for driving the base to rotate, a base lifting device for driving the rotating device and the base to rise and fall, and a heating lifting device for driving the heating device to rise and fall. The base temperature field correction method includes: S0: Obtain a first calibration relationship between the temperature difference of the base and the change in the distance between the heating device and the base under different set temperatures; S1: Place each substrate on the base, control the base lifting device to move so that the base is in the working position, and then control the rotating device to drive the base to rotate in order to execute the semiconductor material layer growth process. Step S1, during the execution of the growth process, also includes the following steps: S11: Obtain and determine the current temperature difference of each substrate based on the current surface temperature of each substrate and the target set temperature, and determine the target substrate with abnormal temperature, the change in target spacing corresponding to the target substrate, and the predetermined adjustment direction based on the current temperature difference and the first calibration relationship. S12: Control the heating lifting device to adjust its height according to the number and position of the target substrates, so that at least a part of the heating device moves the target spacing change in the predetermined adjustment direction or the opposite direction of the predetermined adjustment direction, so as to improve the abnormal temperature phenomenon of the target substrates.

2. The base temperature field correction method as described in claim 1, characterized in that, The base lifting device includes a base lifting base plate disposed on the rotating device, and a base lifting mechanism disposed around the rotating device on the base lifting base plate and the chamber floor plate. In step S1, the base is positioned in the working position by controlling the movement of the base lifting mechanism.

3. The base temperature field correction method as described in claim 2, characterized in that, The heating and lifting device includes a heating support device fixed to the bottom of the heating device, a heating and lifting base plate surrounding the heating support device, and a plurality of heating and lifting mechanisms arranged around the heating support device on the heating and lifting base plate and connected to the chamber floor plate. When the base is in a static state, the orthographic projection of the connection point between each heating and lifting mechanism and the chamber floor plate onto the bearing top surface of the base is a projection mark. In step S12: The target heating lifting mechanism is determined based on the number and position of the target substrate and its distance from each of the projection marks, and the target heating lifting mechanism is controlled to perform the lifting adjustment.

4. The base temperature field correction method as described in claim 3, characterized in that, The number of both the base lifting mechanism and the heating lifting mechanism is at least 3, and the projection mark of at least one of the heating lifting mechanisms is located in each half of the bearing top surface.

5. The base temperature field correction method as described in claim 3, characterized in that, In step S11, the number of target substrates is 1. In step S12: Select the heating and lifting mechanism corresponding to the projection mark closest to the target substrate as the target heating and lifting mechanism, and control the target heating and lifting mechanism to move along the predetermined adjustment direction; When the number of projection marks closest to the target substrate is at least 2, then at least one heating lifting mechanism corresponding to the closest projection mark is selected as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to move along the predetermined adjustment direction.

6. The base temperature field correction method as described in claim 3, characterized in that, In step S11, the number of target substrates is at least 2; When the absolute values ​​of the current temperature difference of at least two target substrates are different, the target substrate with the largest absolute value of temperature difference is taken as the priority target substrate. In step S12, the heating lifting mechanism corresponding to the projection mark closest to the priority target substrate is taken as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to move along the predetermined adjustment direction. When the absolute value of the current temperature difference of each target substrate is the same, in step S12, the heating lifting mechanism corresponding to the projection mark with the smallest distance between each priority target substrate is taken as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run along the predetermined adjustment direction.

7. The base temperature field correction method as described in claim 3, characterized in that, The number of target substrates is at least two, and their current temperature differences are the same. In step S12: Once it is determined that the distance between each target substrate and its closest corresponding projection mark is consistent, the closest projection mark corresponding to each target substrate is obtained, and the heating and lifting mechanism corresponding to each obtained projection mark is used as the target heating and lifting mechanism, and the target heating and lifting mechanism is controlled to run along the predetermined adjustment direction.

8. The base temperature field correction method as described in claim 3, characterized in that, The number of target substrates is at least two, and their current temperature differences are the same. In step S12: When it is determined that the distance between each target substrate and the corresponding closest projection mark is consistent and they are located in the same half of the plane where the bearing top surface is located, the heating and lifting mechanism corresponding to at least one projection mark in the other half of the plane where the bearing top surface is located is used as the target heating and lifting mechanism, and the target heating and lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction.

9. The base temperature field correction method as described in claim 8, characterized in that, Each of the target substrates is located in the same sector, and the sector is centered on the center of the bearing top surface, with its radius line externally tangent to the two target substrates respectively. The other half of the plane containing the bearing top surface includes a symmetrical sector that is axially symmetrical to the sector. In step S12: When there is at least one projection mark in the symmetrical sector, the heating lifting mechanism corresponding to the at least one projection mark in the symmetrical sector is used as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction. When the symmetrical sector does not have the projection mark, the heating lifting mechanism corresponding to at least one of the projection marks closest to the symmetrical sector is taken as the target heating lifting mechanism, and the target heating lifting mechanism is controlled to run in the opposite direction of the predetermined adjustment direction. The central angle of the sector does not exceed 60 degrees.

10. The base temperature field correction method as described in claim 1, characterized in that, In step S11: When the temperature difference between the current surface temperature of the substrate and the target set temperature is positive, the predetermined adjustment direction is to move away from the area where the base is located; When the temperature difference between the current surface temperature of the substrate and the target set temperature is negative, the predetermined adjustment direction is to move closer to the area where the base is located.

11. A semiconductor manufacturing apparatus, characterized in that, include: The room comprises a chamber, a base, and a heating device, wherein the base is disposed within the chamber to support the substrate, and the heating device is disposed between the base and the bottom plate of the chamber. The base includes a base body and a base support device. The base support device is fixedly disposed in the middle of the base, movably passes through the heating and lifting device, and extends to the outside of the cavity. The heating device includes a heating body and a heating support device, the heating support device passing through the bottom plate of the chamber and supporting the bottom of the heating device; A heating lifting device is located outside the cavity and is surrounded by the heating support device to drive the heating device to move up and down. A rotating device is rotatably connected to the bottom of the base support device to drive the base to rotate; A base lifting device is located outside the cavity and surrounds the rotating device to drive the base to move up and down; A temperature measuring device is used to obtain the current surface temperature of each of the substrates; The main control device is communicatively connected to the heating lifting device, the rotating device, the base lifting device and the temperature measuring device to realize information interaction and corresponding function control, and has a pre-stored target set temperature and first calibration relationship; The first calibration relationship is the correspondence between the temperature difference of the base and the change in the distance between the heating device and the base under different set temperatures.

12. The semiconductor manufacturing equipment as claimed in claim 11, characterized in that, The heating and lifting device includes: A heated lifting base plate is installed around the heating support device; Several heating lifting mechanisms are provided on the heating lifting base plate and connected to the chamber base plate, so that the heating support device and the heating device can move up and down by driving the heating lifting base plate.

13. The semiconductor manufacturing equipment as claimed in claim 12, characterized in that, The base lifting device includes: A base lifting plate is arranged around the rotating device; Several base lifting mechanisms are provided on the base lifting base plate and connected to the chamber base plate, so as to cause the rotating device, the base support device and the base body to move up and down by driving the lifting movement of the base lifting base plate.

14. The semiconductor manufacturing equipment as claimed in claim 13, characterized in that, The base lifting mechanism includes a plurality of first lead screws evenly arranged around the area where the heating lifting mechanism is located, and a first lifting drive structure corresponding to each of the first lead screws. The heating lifting mechanism includes a plurality of second lead screws evenly arranged around the area where the heating support device is located, and a second lifting drive structure corresponding to each of the second lead screws.

15. The semiconductor manufacturing equipment as claimed in claim 13, characterized in that, The rotating device includes: outer shell; A rotating shaft with a dynamic seal penetrating the outer shell and connected to a base support device at the top; the base lifting plate surrounds the outer shell and encircles the top protruding part of the rotating shaft. A rotary drive unit rotates to connect the bottom protruding part of the rotary shaft.

16. The semiconductor manufacturing apparatus as claimed in claim 15, characterized in that, An elastic sealing element is provided between the base lifting plate and the chamber bottom plate to form a sealed cavity. The top protrusion is housed in the sealed cavity, and the base support device extends into the sealed cavity and is connected to the top protrusion.

17. The semiconductor manufacturing equipment as claimed in claim 13, characterized in that, An elastic sealing element is provided between the heating lifting base plate and the chamber base plate to form a sealed cavity, and the heating support device and the base support device extend into the sealed cavity.

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