Three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer
By using a three-dimensional thermal stress coupling simulation method, the problem of thermal stress distribution in multilayer composite materials under high temperature environment was solved, the material combination and structural design were optimized, and the performance and reliability of electronic devices were improved.
Patent Information
- Application Number
- CN202511183651.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-22
- Publication Date
- 2025-12-16
AI Technical Summary
Existing thermal stress simulation methods are difficult to accurately predict the thermal stress distribution of multilayer composite materials such as borosilicate glass, copper and dielectric layers in high-temperature environments. Furthermore, traditional methods rely on experimental verification, which is costly and makes it difficult to respond quickly to design changes and optimization needs.
A three-dimensional thermal stress coupling simulation method is adopted. By constructing a multi-physics field coupling simulation model, the thermal stress distribution of different material combinations is simulated, the material thickness and proportion are optimized, and the failure risk caused by thermal expansion differences is reduced by combining finite element analysis technology.
It enables accurate thermal stress analysis, reduces production costs and failure risks, improves the reliability and stability of electronic devices, and optimizes design efficiency and accuracy.
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Figure CN121148547A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the fields of materials engineering and computational simulation technology, specifically to a three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layers. Background Technology
[0002] Borosilicate glass is widely used in electronic packaging, optical fibers, laboratory instruments, and medical devices due to its excellent thermal stability, chemical resistance, and mechanical strength. Compared to traditional ordinary glass, borosilicate glass can withstand higher thermal expansion and larger temperature changes, making it an ideal material for various high-temperature applications. However, with the advancement of microelectronics technology, the application scenarios of borosilicate glass are gradually expanding. Especially in the manufacturing processes of electronic packaging and semiconductor devices, thermal stress management becomes a key technical challenge when borosilicate glass works together with other materials (such as copper, dielectric layers, etc.).
[0003] In modern electronic devices, especially in the manufacturing process of integrated circuits (ICs) and high-performance semiconductor devices, thermal stress between materials is often a significant factor affecting device reliability and long-term performance. Different materials have different coefficients of thermal expansion (CTE). When these materials are heated or cooled under operating conditions, thermal stress is generated, which can lead to material cracking, deformation, or even device failure. The combination of borosilicate glass, copper, and a dielectric layer is particularly complex due to the significant differences in their coefficients of thermal expansion and thermal conductivity, making thermal stress management especially challenging in high-temperature operating environments.
[0004] In traditional electronic packaging design, engineers typically rely on experience and iterative experimentation to optimize material thickness, structure, and cooling conditions to address thermal stress issues. However, this approach is not only time-consuming and costly, but also fails to accurately predict thermal stress distribution under different conditions and is difficult to respond quickly to design changes and optimization requirements. Therefore, computational simulation techniques, particularly finite element analysis (FEA) and multiphysics coupled simulation methods, have become an effective way to solve this problem.
[0005] In recent years, with the increasing demands for thermal management in high-performance electronic devices, especially semiconductor components, three-dimensional thermal stress coupling simulation methods have gradually become a research hotspot in materials engineering. In this process, how to reasonably handle the differences in thermal stress between various materials, optimize material layout and thickness, and thus improve the performance and reliability of electronic devices has become an urgent technical challenge. Traditional thermal stress analysis methods often neglect the complex coupling effects between materials, especially in composite material systems. The differences in the thermal expansion coefficients of different materials such as borosilicate glass, copper, and dielectric layers can lead to stress concentration, thereby affecting the final device performance.
[0006] Currently, although some thermal stress simulation methods have been proposed and applied in the field of electronic packaging, several limitations remain. First, most existing simulation models only analyze the thermal stress of a single material, making it difficult to adapt to complex multilayer composite structures. Second, existing models typically ignore the dynamic thermal stress generated by different materials during actual use due to factors such as temperature gradients and pressure changes. Finally, due to the high cost of experimental verification, predicting and optimizing the thermal stress distribution through simulation has become a significant challenge for achieving high-performance design. Therefore, three-dimensional thermal stress coupling simulation methods for multilayer composite materials such as borosilicate glass / Cu / dielectric layer still require further research and optimization. Summary of the Invention
[0007] The purpose of this invention is to address the problems existing in the prior art by providing a three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layers.
[0008] To achieve the above objectives, the technical solution adopted by the present invention is as follows: A three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layers includes the following steps: Step 1: Collect and organize effective information on material properties and physical fields involved in the simulation process; Step 2: Preliminary screening of material property parameters for borosilicate glass, copper, and dielectric layer to determine the interfacial compatibility between different materials; Step 3: Construct a preliminary three-dimensional model of the composite material of borosilicate glass, Cu and dielectric layer, and conduct stability analysis for different material combinations to evaluate the thermal stress distribution characteristics of different material combinations at high temperature and screen the optimal material combination; Step 4: Based on the preliminary three-dimensional model, establish a three-dimensional thermal stress coupling simulation model to simulate the thermal stress distribution under different working conditions, analyze the stress transfer mechanism between different material layers, optimize the thermal adaptability of the material interface, and obtain the coupling simulation results. Step 5: Based on the coupled simulation results, optimize the structure of the composite material using finite element analysis technology, and adjust the thickness and proportion of different material layers to achieve uniform distribution of thermal stress and reduce the risk of failure caused by differences in thermal expansion. Step 6: Simulate and test the thermal stress response under different working conditions, adjust and optimize the operating conditions in combination with the actual manufacturing environment, and ensure the accuracy and practicality of the coupled simulation results; Step 7: By repeatedly optimizing the processes of Step 4, Step 5 and Step 6, the optimal three-dimensional thermal stress distribution design scheme is finally determined, and the effectiveness and reliability of the three-dimensional thermal stress coupling simulation method are verified by experiments.
[0009] The technical solution of this invention not only overcomes the limitations of traditional single-physics simulation methods, enabling more accurate thermal stress analysis under multi-physics coupling, but also reduces the failure risk caused by thermal expansion differences by optimizing material thickness, proportions, and cooling conditions, thereby improving the reliability and stability of electronic devices. This method is not only applicable to thermal stress analysis of borosilicate glass, copper, and dielectric layers, but can also be widely applied to the thermal management design of other composite material systems, demonstrating significant application prospects and promotional value.
[0010] Furthermore, the valid information in step 1 includes at least the material's mechanical properties, coefficient of thermal expansion, thermal conductivity, and interfacial properties.
[0011] Furthermore, the preliminary three-dimensional model covers the thermal stress behavior of the material under different working conditions, as well as the stress transfer mechanism, providing complete and accurate initial conditions for subsequent coupled simulation analysis.
[0012] Furthermore, step 2 includes the following steps: By conducting a comprehensive investigation and analysis of the material properties of borosilicate glass, copper, and dielectric layers, physical parameters related to thermal stress and thermal expansion characteristics were identified; and appropriate materials were selected based on the performance requirements of the dielectric layer in different working environments. The interfacial bonding strength between borosilicate glass, copper, and dielectric layers was evaluated. By analyzing the interfacial mechanical behavior between different material combinations, interfacial parameters were provided for subsequent three-dimensional thermal stress coupling simulation models.
[0013] Furthermore, in step 3, the preliminary three-dimensional model includes the geometric configurations of different materials, using a positive integer m and m≥3 to ensure sufficient representativeness of the structure, embedding the selected materials into the preliminary three-dimensional model in different geometric arrangements to construct the supercell structure of the composite material; and performing stability analysis on different material combinations at the microscopic level.
[0014] Furthermore, in step 3, the influence of different material combinations on thermal expansion behavior is analyzed as follows: By introducing different material combinations into the preliminary three-dimensional model, the effects on the coefficient of thermal expansion, thermal conductivity, and thermal stress distribution are calculated. Under high-temperature conditions, the thermal expansion mismatch effect of different material combinations on the preliminary three-dimensional model is studied, possible stress concentration phenomena are analyzed, and the thermal stress caused by mismatch is reduced by optimizing the material combination scheme.
[0015] Furthermore, in step 3, a microscopic stability analysis is performed on the composite material after optimizing the material combination scheme. The bonding energy of interface atoms, the dislocation density of interface atoms under thermal load, the residual stress and the change of binding energy are calculated, so as to provide material property parameters for subsequent three-dimensional thermal stress coupling simulation models.
[0016] Furthermore, in step 4, a mesoscopic model of the borosilicate glass, Cu, and dielectric layer is established. By simulating the interaction between gas and surface atoms under different reaction conditions, the stability and thermal compatibility of the material surface under high temperature conditions are ensured. At the mesoscopic level, attention is paid to the thermal compatibility barrier at the glass-Cu interface. By optimizing the transition layer thickness, the stress gradient is shifted to the low-risk region. By adjusting parameters including interface geometry, cooling gas flow rate, and thermal cycling profile in the reaction, the optimal reaction effect is ensured.
[0017] Furthermore, in step 4, the three-dimensional thermal stress coupling simulation model simulates the following process: (1) The cumulative effect of interfacial shear stress induced by thermal gradient; (2) The relaxation mechanism of interfacial stress by plastic deformation of Cu layer; (3) Prediction of microcrack initiation and propagation path in dielectric layer; (4) Transient thermal stress response under cooling airflow impact.
[0018] Furthermore, the preliminary three-dimensional model established in step S3 is compared with the coupled simulation results obtained in step S4, and the boundary conditions and material property parameters are continuously adjusted to ensure that the simulation results are consistent with the actual environment.
[0019] Compared with existing technologies, the beneficial effects of this invention are: 1. This three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer optimizes the composite material structure and process parameters through computational simulation technology, providing the optimal design scheme for the borosilicate glass / Cu / dielectric layer structure. This effectively reduces trial-and-error costs and failure risks in actual production, improves product reliability, and enhances the thermal stress management capability of borosilicate glass / Cu / dielectric layer composite materials in electronic packaging and other high-performance applications; 2. This method establishes a multi-level coupled simulation model from material properties, microscopic heat conduction, mesoscopic thermal stress to the macroscopic physical environment, simulating the thermal stress distribution and material behavior under different working conditions, thereby accurately predicting the impact of thermal stress, and thus... Optimized design; This method enables the identification of potential thermal stress problems during the design phase, reducing repeated adjustments during experimentation and greatly improving design efficiency and accuracy; 3. This invention utilizes three-dimensional thermal stress coupling simulation technology, introducing the coupling effect of multiple physical fields during the simulation process to simulate phenomena such as thermal expansion, heat conduction, stress, and deformation between borosilicate glass, copper, and dielectric layers under high-temperature environments; It can provide strong support for thermal stress management of various materials in electronic packaging, thereby reducing the occurrence of thermal failure and improving the stability and service life of electronic devices; The process parameters provided by the simulation results can provide more accurate design references for actual production, optimizing material selection, thickness settings, and cooling schemes, significantly improving overall performance. Attached Figure Description
[0020] Figure 1 This is a schematic flowchart of a three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to the present invention; Figure 2 This invention provides a data interaction and system framework diagram for a three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer. Detailed Implementation
[0021] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0022] A three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layers, combined with Figure 1 and Figure 2 As shown, it includes the following steps: Step 1: Collect and organize effective information on material properties and physical fields involved in the simulation process; Step 2: Preliminary screening of material property parameters for borosilicate glass, copper, and dielectric layer to determine the interfacial compatibility between different materials; Step 3: Construct a preliminary three-dimensional model of the composite material of borosilicate glass, Cu and dielectric layer, and conduct stability analysis for different material combinations to evaluate the thermal stress distribution characteristics of different material combinations at high temperature and screen the optimal material combination; Step 4: Based on the preliminary three-dimensional model, establish a three-dimensional thermal stress coupling simulation model to simulate the thermal stress distribution under different working conditions, analyze the stress transfer mechanism between different material layers, optimize the thermal adaptability of the material interface, and obtain the coupling simulation results. Step 5: Based on the coupled simulation results, optimize the structure of the composite material using finite element analysis technology, and adjust the thickness and proportion of different material layers to achieve uniform distribution of thermal stress and reduce the risk of failure caused by differences in thermal expansion. Step 6: Simulate and test the thermal stress response under different working conditions, adjust and optimize the operating conditions in combination with the actual manufacturing environment, and ensure the accuracy and practicality of the coupled simulation results; Step 7: By repeatedly optimizing the processes of Step 4, Step 5 and Step 6, the optimal three-dimensional thermal stress distribution design scheme is finally determined, and the effectiveness and reliability of the three-dimensional thermal stress coupling simulation method are verified by experiments.
[0023] This three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer optimizes the composite material structure and process parameters through computational simulation technology, providing the optimal design scheme for the borosilicate glass / Cu / dielectric layer structure. This effectively reduces trial and error costs and failure risks in actual production, improves product reliability, and enhances the thermal stress management capability of borosilicate glass / Cu / dielectric layer composite materials in electronic packaging and other high-performance applications.
[0024] This method establishes a multi-level coupled simulation model that integrates material properties, microscopic heat conduction, mesoscopic thermal stress, and macroscopic physical environment to simulate the distribution of thermal stress and material behavior under different working conditions. This allows for accurate prediction of the impact of thermal stress and subsequent design optimization. This approach enables the identification of potential thermal stress problems during the design phase, reducing repeated adjustments during experiments and greatly improving design efficiency and accuracy.
[0025] This invention utilizes three-dimensional thermal stress coupling simulation technology, introducing the coupling effect of multiple physical fields during the simulation process to simulate phenomena such as thermal expansion, heat conduction, stress, and deformation between borosilicate glass, copper, and dielectric layers under high-temperature environments. This provides strong support for thermal stress management of various materials in electronic packaging, thereby reducing thermal failure and improving the stability and lifespan of electronic devices. The process parameters provided by the simulation results can offer more accurate design references for actual production, optimizing material selection, thickness settings, and cooling schemes, significantly improving overall performance.
[0026] The core implementation of this invention is based on a multiphysics coupled finite element simulation model. First, at the microscopic level, a thermal stress transfer model between borosilicate glass, copper, and the dielectric layer is constructed using fundamental data such as the thermal conductivity, coefficient of thermal expansion, and mechanical properties of the materials. Through refined physical parameter settings, the stress, deformation, and thermal expansion processes of each material under temperature variations are simulated. Next, at the mesoscopic scale, a three-dimensional spatiotemporal distribution model of thermal stress is established by combining changes in microscopic thermal conduction and mechanical stress. This model can describe the dynamic process of interaction between different materials in a high-temperature working environment and analyze thermal stress sources, stress concentration areas, and potential failure points in multilayer structures. At the macroscopic level, multiphysics coupled simulation simulates the thermal conduction, thermal stress, and their response to the external environment (such as cooling methods, temperature gradients, and reaction temperatures). At this point, the simulation model considers more practical working conditions, such as temperature fluctuations, stress distribution, heat source locations, and reverse stress effects. By comparing the thermal stress results under different process conditions, this invention can accurately predict the performance of composite materials in the working environment and provide intuitive data support for their optimized design. In particular, this simulation method can predict the distribution of thermal stress and possible failure modes under the influence of different cooling methods, material thickness, contact interface conditions, etc., thereby providing the optimal thermal stress control scheme for practical design.
[0027] Furthermore, the effective information in step 1 includes at least the material's mechanical properties, coefficient of thermal expansion, thermal conductivity, interfacial properties, and various physical and chemical parameters.
[0028] Specifically, this includes: the structure and thermal properties of borosilicate glass, such as thermal conductivity, coefficient of expansion, and specific heat capacity; the thermal expansion characteristics, thermal conductivity, and mechanical strength parameters of copper materials; the thermodynamic properties of the dielectric layer (such as polymer or ceramic materials), including its coefficient of expansion, dielectric constant, and mechanical strength; and the interfacial properties between the dielectric layer and borosilicate glass and copper, especially the interfacial bonding strength and the effect of thermal expansion mismatch.
[0029] Furthermore, the preliminary three-dimensional model covers the thermal stress behavior of the material under different working conditions, as well as the stress transfer mechanism, providing complete and accurate initial conditions for subsequent coupled simulation analysis.
[0030] Furthermore, step 2 includes the following steps: By conducting a comprehensive investigation and analysis of the material properties of borosilicate glass, copper, and dielectric layers, physical parameters related to thermal stress and thermal expansion characteristics were identified; and appropriate materials were selected based on the performance requirements of the dielectric layer in different working environments. Specific selection criteria include: the coefficient of thermal expansion, thermal conductivity, and specific heat capacity of the materials, to ensure that the difference in thermal expansion between different materials is minimized, so as to reduce the impact of thermal stress on structural stability; and to select metallic copper and dielectric layers with good thermal conductivity in order to better transfer heat and reduce the accumulation of thermal stress.
[0031] Selecting dielectric layer materials: Based on the performance requirements of the dielectric layer under different working conditions (such as high temperature, vacuum, etc.), select appropriate materials. These materials usually have a low coefficient of thermal expansion, which can reduce thermal stress caused by temperature changes. In addition, considering high temperature resistance and mechanical strength, high-performance ceramic or polymer materials can also be selected as dielectric layers.
[0032] Material Combination and Interface Property Analysis: In this step, the interfacial bonding strength between borosilicate glass, copper, and dielectric layers is further evaluated to ensure good thermal matching between different layers. By analyzing the interfacial mechanical behavior between different material combinations, interface parameters can be provided for subsequent three-dimensional thermal stress coupling simulation models.
[0033] Furthermore, in step 3, the preliminary three-dimensional model includes the geometric configurations of different materials. A positive integer m and m≥3 are used to ensure the full representativeness of the structure. The selected materials are embedded in the preliminary three-dimensional model in different geometric arrangements to construct the supercell structure of the composite material. At the microscopic level, the stability analysis of different material combinations is performed to evaluate their thermal stress distribution characteristics at high temperatures and to screen the optimal material combination.
[0034] Furthermore, in step 3, the influence of different material combinations on thermal expansion behavior is analyzed as follows: By introducing different material combinations into the preliminary three-dimensional model, the effects on the coefficient of thermal expansion, thermal conductivity, and thermal stress distribution are calculated. In particular, under high-temperature conditions, the thermal expansion mismatch effect of different material combinations on the preliminary three-dimensional model is studied, possible stress concentration phenomena are analyzed, and the thermal stress caused by mismatch is reduced by optimizing the material combination scheme.
[0035] Furthermore, in step 3, a microscopic stability analysis is performed on the composite material after optimizing the material combination scheme. The bonding energy of interface atoms, the dislocation density of interface atoms under thermal load, the residual stress and the change of binding energy are calculated, which can provide material property parameters for subsequent three-dimensional thermal stress coupling simulation models.
[0036] Furthermore, in step 4, material combination and interface stress data are imported: based on the material combination and preliminary three-dimensional model selected in step S3, appropriate material combination and interface stress data are imported into the three-dimensional thermal stress coupling simulation model in this step.
[0037] Establish mesoscopic level models: Based on this, establish mesoscopic level models of borosilicate glass, Cu and dielectric layers, especially surface models for gas deposition and reaction processes; by simulating the interaction between gas and surface atoms under different reaction conditions, ensure the stability and thermal adaptability of the material surface under high temperature conditions.
[0038] The three-dimensional thermal stress coupling simulation model simulates the following processes: (1) The cumulative effect of interfacial shear stress induced by thermal gradient; (2) The relaxation mechanism of interfacial stress by plastic deformation of Cu layer; (3) Prediction of microcrack initiation and propagation path in dielectric layer; (4) Transient thermal stress response under cooling airflow impact.
[0039] At the mesoscopic level, we focus on the thermal adaptation barrier at the glass-Cu interface and optimize the transition layer thickness to shift the stress gradient to the low-risk region. For the thermal flow field, we calculate the temperature uniformity under the critical convective heat transfer coefficient.
[0040] Parameter optimization: By adjusting parameters including interface geometry, cooling gas flow rate, and thermal cycle profile, optimal reaction performance is ensured. A three-dimensional thermal stress coupling simulation model is established to simulate thermal stress distribution under different operating conditions (such as high temperature, high pressure, and rapid cooling), analyze the stress transfer mechanism between different layers, and optimize the thermal compatibility of material interfaces.
[0041] Furthermore, the preliminary three-dimensional model established in step S3 is compared with the coupled simulation results obtained in step S4, and the boundary conditions and material property parameters are continuously adjusted to ensure that the simulation results are consistent with the actual environment.
[0042] In step S7, the reaction process is repeatedly simulated and adjusted by combining the thermal stress control schemes obtained in steps S1 to S6, further optimizing the thermal stress uniformity and long-term stability of the material. Specifically, key parameters such as the material's thermal expansion coefficient, temperature change rate, and gas flow path are precisely adjusted in multiple simulations. By adjusting these parameters, the distribution of thermal stress can be further optimized, minimizing the failure risk caused by stress concentration. This process relies not only on numerical simulation but also on iterative optimization using feedback data from the actual manufacturing process. For example, at different reaction times and temperatures, experimental tests are conducted to verify the thermal compatibility and stability of each material layer, ensuring that each layer reacts under optimal conditions. For instance, X-ray computed tomography (μ-CT) is used to measure the interface layer area; digital image correlation (DIC) is used to capture the surface strain field; and scanning acoustic microscopy (SAM) is used to detect internal cracks. The experimental results are then compared with multi-scale simulation predictions. Finally, through this cyclical optimization process, an optimal design scheme that meets the needs of practical applications is obtained, significantly reducing testing costs and failure risks in actual production. Meanwhile, this multiphysics coupling simulation method provides a theoretical basis for the design of borosilicate glass / Cu / dielectric layer structures, ensuring the high stability and excellent performance of the material during long-term use. Through repeated simulations and experimental verification, an optimized thermal stress control scheme was finally obtained, which not only improved the material's performance and stability but also significantly reduced the failure rate and cost in the production process, providing an efficient and reliable design solution for industrial production.
[0043] This invention establishes a three-dimensional thermal stress coupling simulation model of borosilicate glass / Cu / dielectric layer at three scales—micro, meso, and macro—through multi-scale multiphysics coupling simulation. This model accurately simulates the distribution and transmission mechanism of thermal stress under different operating conditions. Through in-depth analysis of the physical phenomena of composite materials, such as thermal expansion, thermal conduction, and interface matching, this invention not only effectively predicts the trend of thermal stress changes but also optimizes the thermal adaptability of materials to reduce the risk of structural failure caused by differences in thermal expansion, thereby improving the stability of composite materials under high temperature and high pressure environments. The thermal stress coupling simulation method provided by this invention accurately simulates the thermal conduction characteristics of materials at the microscopic level, analyzes the transmission and distribution of thermal stress at the mesoscopic level, and optimizes material structure and process parameters at the macroscopic level, realizing the thermal adaptability analysis of composite materials under various operating conditions. Through multiphysics coupling, it is possible to predict and optimize different combinations of materials and structural changes, significantly improving the design accuracy and production efficiency of composite materials. Furthermore, the simulation method of this invention can effectively reduce resource waste and R&D costs in the experimental stage, and finely optimize the manufacturing process conditions (such as temperature gradient, cooling rate, pressure, etc.) of composite materials in actual production, thereby achieving optimal thermal stress distribution and thermal adaptability. This method not only has broad application potential in the field of composite materials, but also provides strong theoretical support and technical guidance for thermal management and stress control in the material design and manufacturing process. In summary, this invention provides an efficient and accurate simulation tool for thermal stress analysis and optimization of borosilicate glass / Cu / dielectric layer composite materials, which has important practical significance for improving material performance and optimizing manufacturing processes, and at the same time provides valuable reference and experience for technological progress and industrial development in related fields.
[0044] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layers, characterized in that, Includes the following steps: Step 1: Collect and organize effective information on material properties and physical fields involved in the simulation process; Step 2: Preliminary screening of material property parameters for borosilicate glass, copper, and dielectric layer to determine the interfacial compatibility between different materials; Step 3: Construct a preliminary three-dimensional model of the composite material of borosilicate glass, Cu and dielectric layer, and conduct stability analysis for different material combinations to evaluate the thermal stress distribution characteristics of different material combinations at high temperature and screen the optimal material combination; Step 4: Based on the preliminary three-dimensional model, establish a three-dimensional thermal stress coupling simulation model to simulate the thermal stress distribution under different working conditions, analyze the stress transfer mechanism between different material layers, optimize the thermal adaptability of the material interface, and obtain the coupling simulation results. Step 5: Based on the coupled simulation results, optimize the structure of the composite material using finite element analysis technology, and adjust the thickness and proportion of different material layers to achieve uniform distribution of thermal stress and reduce the risk of failure caused by differences in thermal expansion. Step 6: Simulate and test the thermal stress response under different working conditions, adjust and optimize the operating conditions in combination with the actual manufacturing environment, and ensure the accuracy and practicality of the coupled simulation results; Step 7: By repeatedly optimizing the processes of Step 4, Step 5 and Step 6, the optimal three-dimensional thermal stress distribution design scheme is finally determined, and the effectiveness and reliability of the three-dimensional thermal stress coupling simulation method are verified by experiments.
2. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 1, characterized in that, The valid information in step 1 includes at least the material's mechanical properties, coefficient of thermal expansion, thermal conductivity, and interface properties.
3. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 1, characterized in that, The preliminary three-dimensional model covers the thermal stress behavior of the material under different working conditions, as well as the stress transfer mechanism, providing complete and accurate initial conditions for subsequent coupled simulation analysis.
4. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 1, characterized in that, Step 2 includes the following steps: By conducting a comprehensive investigation and analysis of the material properties of borosilicate glass, copper, and dielectric layers, physical parameters related to thermal stress and thermal expansion characteristics were identified; and appropriate materials were selected based on the performance requirements of the dielectric layer in different working environments. The interfacial bonding strength between borosilicate glass, copper, and dielectric layers was evaluated. By analyzing the interfacial mechanical behavior between different material combinations, interfacial parameters were provided for subsequent three-dimensional thermal stress coupling simulation models.
5. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 1, characterized in that, In step 3, the preliminary three-dimensional model includes the geometric configurations of different materials. A positive integer m and m≥3 are used to ensure the full representativeness of the structure. The selected materials are embedded in the preliminary three-dimensional model in different geometric arrangements to construct the supercell structure of the composite material. Stability analysis of different material combinations is performed at the microscopic level.
6. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 5, characterized in that, In step 3, the influence of different material combinations on thermal expansion behavior is analyzed as follows: By introducing different material combinations into the preliminary three-dimensional model, the effects on the coefficient of thermal expansion, thermal conductivity, and thermal stress distribution are calculated. Under high-temperature conditions, the thermal expansion mismatch effect of different material combinations on the preliminary three-dimensional model is studied, possible stress concentration phenomena are analyzed, and the thermal stress caused by mismatch is reduced by optimizing the material combination scheme.
7. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 6, characterized in that, In step 3, a microscopic stability analysis is performed on the composite material after optimizing the material combination scheme. The bonding energy of interface atoms, the dislocation density of interface atoms under thermal load, the residual stress and the change of binding energy are calculated, so as to provide material property parameters for subsequent three-dimensional thermal stress coupling simulation models.
8. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 1, characterized in that, In step 4, a mesoscopic model of borosilicate glass, Cu and dielectric layer is also established. By simulating the interaction between gas and surface atoms under different reaction conditions, the stability and thermal compatibility of the material surface under high temperature conditions are ensured. At the mesoscopic level, we focus on the thermal adaptation barrier at the glass-Cu interface. By optimizing the transition layer thickness, we can shift the stress gradient to the low-risk region. By adjusting parameters such as interface geometry, cooling gas flow rate, and thermal cycling profile, we can ensure the best reaction effect.
9. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 1, characterized in that, In step 4, the three-dimensional thermal stress coupling simulation model simulates the following process: (1) The cumulative effect of interfacial shear stress induced by thermal gradient; (2) The relaxation mechanism of interfacial stress by plastic deformation of Cu layer; (3) Prediction of microcrack initiation and propagation path in dielectric layer; (4) Transient thermal stress response under cooling airflow impact.
10. The three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layer according to claim 1, characterized in that, By combining the preliminary three-dimensional model established in step S3 with the coupled simulation results obtained in step S4, the boundary conditions and material property parameters are continuously adjusted to ensure that the simulation results are consistent with the actual environment.
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