An atomic gas chamber for dynamic concentration regulation, its preparation method and application

Abstract

This invention provides an atomic gas chamber for dynamic concentration regulation, its preparation method, and its application, belonging to the field of atomic clock technology. The atomic gas chamber provided by this invention contains two interconnected micro-cavities: a laser reaction chamber and a storage chamber. The laser reaction chamber is the core reaction region of the atomic clock, through which the laser beam passes and resonates with alkali metal atoms. The storage chamber is mainly used for the vaporization, condensation, and temporary storage of alkali metals, regulating the atomic concentration in the reaction region. The laser reaction chamber and the storage chamber are connected by microchannels, providing a pathway for the movement of alkali metal atoms within both chambers. By incorporating heating and cooling structures, the temperature difference between the two chambers can be precisely controlled, thereby achieving reversible migration of alkali metal atom gas and thus regulating the atomic concentration within the laser reaction chamber.

Description

Technical Field

[0001] This invention relates to the field of atomic clock technology, and in particular to an atomic gas chamber for dynamic concentration regulation, its preparation method, and its application. Background Technology

[0002] With the continuous advancement of atomic clock technology, the precise control of atomic concentration within the atomic gas chamber has become a key factor affecting its performance and stability. To improve the accuracy and stability of atomic clocks, it is essential to achieve precise adjustment of the atomic concentration within the atomic gas chamber under different operating conditions, ensuring that the atomic concentration is always at its optimal level.

[0003] However, existing methods for adjusting atomic concentration in atomic chambers are typically based on static methods, resulting in the following drawbacks: 1. Lack of dynamic control capability: Static methods rely on fixed control parameters and cannot be dynamically adjusted in real time according to environmental changes or fluctuations in working conditions. In micro atomic chambers, especially in high-precision atomic clock applications, dynamic and real-time control of atomic concentration cannot be achieved, severely limiting the stability and accuracy of chamber performance. 2. Poor environmental adaptability: Changes in external temperature, humidity, and air pressure can directly affect the atomic concentration within the chamber. In complex and constantly changing working environments, existing atomic chambers lack automatic adjustment mechanisms and cannot quickly adjust the chamber's working state when the environment changes, leading to fluctuations in atomic chamber performance. This affects the stability and accuracy of measurement results, limiting their performance in practical applications.

[0004] Therefore, how to provide an atomic gas chamber that can achieve precise adjustment of atomic concentration under different conditions has become a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0005] The purpose of this invention is to provide an atomic gas chamber for dynamic concentration adjustment, its preparation method, and its application. The atomic gas chamber provided by this invention can dynamically adjust the distribution direction and concentration of gaseous metal in the chamber through a temperature control mechanism. It can respond quickly and adjust the atomic concentration precisely according to the working requirements, thereby meeting the high requirements of atomic clock for atomic density stability and accuracy. This ensures that the atomic gas chamber can adapt to complex working environments and improves the reliability, stability, and accuracy of the system and atomic clock.

[0006] To achieve the above-mentioned objectives, the present invention provides the following technical solution:

[0007] This invention provides an atomic gas chamber for dynamic concentration adjustment, comprising a cavity structure, a heating structure located above the cavity structure, and a cooling structure located below the cavity structure; the cavity structure contains an alkali metal;

[0008] The cavity structure includes a laser reaction chamber, a storage chamber, and a microchannel; the laser reaction chamber and the storage chamber are axially parallel and located on the same parallel plane; the laser reaction chamber and the storage chamber are connected by the microchannel.

[0009] Preferably, the alkali metal includes any one or more of rubidium, potassium, lithium, sodium, cesium, and francium.

[0010] Preferably, the laser reaction chamber and the storage chamber are independently cylindrical in shape; the height of the laser reaction chamber and the storage chamber is independently 0.5-5 mm; and the diameter of the laser reaction chamber and the storage chamber is independently 2-8 mm.

[0011] Preferably, the height of the microchannel is 100–300 μm and the width of the microchannel is 50–1000 μm.

[0012] Preferably, there are two heating structures; the two heating structures are located directly above the laser reaction chamber and the storage chamber in the cavity structure, respectively.

[0013] Preferably, there are two cooling structures; the two cooling structures are located directly below the laser reaction chamber and the storage chamber in the cavity structure, respectively; the cooling structures are located on the side away from the microchannel.

[0014] This invention provides a method for preparing an atomic gas chamber with dynamically adjustable concentration as described in the above technical solution, comprising the following steps:

[0015] (1) A first protective layer is formed by coating a photoresist on the surface of the non-cavity structure of the substrate, and then the first etching is performed to obtain a cavity structure containing a laser reaction chamber and a storage chamber;

[0016] (2) In the cavity structure obtained in step (1), a second protective layer is formed by coating the non-microchannel portion with photoresist, and then a second etching is performed to form a microchannel between the laser reaction chamber and the storage chamber, thus obtaining a cavity structure with microchannels.

[0017] (3) Bond semiconductor glass to the lower surface of the cavity structure with microchannels obtained in step (2), then inject alkali metal into the laser reaction chamber, and finally bond semiconductor glass to the upper surface of the cavity structure with microchannels to obtain a closed structure.

[0018] (4) Install heating and cooling structures in the closed structure obtained in step (3) to obtain an atomic gas chamber that achieves dynamic concentration adjustment.

[0019] Preferably, the first etching in step (1) and the second etching in step (2) are independently reactive ion etching techniques.

[0020] Preferably, in step (3), the bonding temperature of the bonding semiconductor glass is independently 300-400°C, the bonding time is independently 10-15 min, and the bonding pressure is independently 50-100 kPa.

[0021] The present invention provides the application of the atomic gas cell with dynamic concentration regulation as described in the above technical solution or the atomic gas cell with dynamic concentration regulation prepared by the preparation method described in the above technical solution in atomic clocks.

[0022] This invention provides an atomic gas chamber for dynamic concentration regulation, comprising a cavity structure, a heating structure above the cavity structure, and a cooling structure below the cavity structure. The cavity structure contains an alkali metal. The cavity structure includes a laser reaction chamber, a storage chamber, and a microchannel. The laser reaction chamber and the storage chamber are axially parallel and located on the same parallel plane. The laser reaction chamber and the storage chamber are connected by the microchannel. The atomic gas chamber provided by this invention contains two interconnected micro-cavities: a laser reaction chamber and a storage chamber. The laser reaction chamber is the core reaction region of the atomic clock, through which the laser beam passes and resonates with alkali metal atoms. The storage chamber is mainly used for the vaporization, condensation, and temporary storage of the alkali metal, regulating the atomic concentration in the reaction region. The connection between the laser reaction chamber and the storage chamber via the microchannel provides a channel for the movement of alkali metal atoms within the two chambers. By setting up the heating and cooling structures, the temperature difference between the two chambers can be precisely controlled, thereby achieving reversible migration of alkali metal atom gas and thus regulating the atomic concentration within the laser reaction chamber. The results of the embodiments show that the atomic concentration of metallic rubidium in the laser reaction chamber can be effectively dynamically adjusted by heating and cooling the laser reaction chamber and the storage chamber respectively. Attached Figure Description

[0023] Figure 1 A perspective view of an atomic gas cell for achieving dynamic concentration adjustment;

[0024] Figure 2 Perspective view of the cavity structure in the atomic gas chamber to achieve dynamic concentration adjustment;

[0025] Figure 3 Perspective view of the heating-cooling system in an atomic gas chamber for achieving dynamic concentration adjustment;

[0026] Figure 4 A cross-sectional view of the atomic gas chamber for achieving dynamic concentration adjustment;

[0027] Figure 5 Flowchart of the atomic gas cell preparation process to achieve dynamic concentration adjustment;

[0028] Figure 6 A three-dimensional view of the atomic gas chamber before cutting, where dynamic concentration adjustment is achieved;

[0029] Figure 7 The curve showing the concentration of rubidium atoms in the storage chamber as a function of temperature in Application Example 1;

[0030] Figure 8 The curve showing the concentration of rubidium atoms in the laser reaction chamber as a function of temperature in Application Example 1;

[0031] Figure 9 The curve showing the concentration of rubidium atoms in the storage chamber as a function of temperature in Application Example 2;

[0032] Figure 10 The curve showing the concentration of rubidium atoms in the laser reaction chamber as a function of temperature in Application Example 2;

[0033] Figure 11 The curve showing the concentration of rubidium atoms in the storage chamber as a function of temperature in Application Example 3;

[0034] Figure 12 The curve showing the change in rubidium atom concentration with temperature in the laser reaction chamber in Application Example 3. Detailed Implementation

[0035] This invention provides an atomic gas chamber for dynamic concentration adjustment, comprising a cavity structure, a heating structure located above the cavity structure, and a cooling structure located below the cavity structure; the cavity structure contains an alkali metal;

[0036] The cavity structure includes a laser reaction chamber, a storage chamber, and a microchannel; the laser reaction chamber and the storage chamber are axially parallel and located on the same parallel plane; the laser reaction chamber and the storage chamber are connected by the microchannel.

[0037] like Figure 1 As shown, in one embodiment of the present invention, the atomic gas chamber for achieving dynamic concentration adjustment includes a cavity structure; the cavity structure contains an alkali metal. In the present invention, the alkali metal preferably includes any one or more of rubidium, potassium, lithium, sodium, cesium, and francium, more preferably rubidium. The present invention can improve the accuracy and stability of the atomic clock by using the above-mentioned alkali metal.

[0038] In this invention, the preferred method for injecting the alkali metal is reactive evaporation injection. This invention does not impose any specific limitations on the specific operation of the reactive evaporation injection; it can be determined based on the technical knowledge of those skilled in the art.

[0039] like Figure 1 and Figure 2As shown, in one embodiment of the present invention, the cavity structure includes a laser reaction chamber, a storage chamber, and a microchannel; the laser reaction chamber and the storage chamber are connected by the microchannel.

[0040] In this invention, the laser reaction chamber and the storage chamber are preferably independently cylindrical in shape; the height of the laser reaction chamber and the storage chamber is preferably 0.5–5 mm; and the diameter of the laser reaction chamber and the storage chamber is preferably 2–8 mm. As one embodiment of this invention, the height of the laser reaction chamber and the storage chamber can be independently 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, 1.2 mm, 1.5 mm, 1.8 mm, 2 mm, 2.2 mm, 2.5 mm, 2.8 mm, 3 mm, 3.2 mm, 3.5 mm, 3.8 mm, 4 mm, 4.2 mm, 4.5 mm, or 4.8 mm; and the diameter of the laser reaction chamber and the storage chamber can be independently 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, 5 mm, 5.5 mm, 6 mm, 6.5 mm, 7 mm, or 7.5 mm.

[0041] like Figure 1 and Figure 2 As shown, in one embodiment of the present invention, when the laser reaction chamber and the storage chamber are cylindrical, the laser reaction chamber and the storage chamber are axially parallel and located on the same parallel plane.

[0042] In this invention, the height of the microchannel is preferably 100–300 μm; the width of the microchannel is preferably 50–1000 μm. This invention does not impose a specific limitation on the length of the microchannel, but determines it based on the distance between the laser reaction chamber and the storage chamber, ensuring that the laser reaction chamber and the storage chamber are interconnected. As one embodiment of this invention, the height of the microchannel can be 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm, 200 μm, 210 μm, 220 μm, 230 μm, 240 μm, 250 μm, 260 μm, 270 μm, 280 μm, or 290 μm; The width of the microchannel can be 60μm, 70μm, 80μm, 90μm, 100μm, 150μm, 200μm, 250μm, 300μm, 350μm, 400μm, 450μm, 500μm, 550μm, 600μm, 650μm, 700μm, 750μm, 800μm, 850μm, 900μm or 950μm.

[0043] This invention, by setting a microchannel between the laser reaction chamber and the storage chamber, allows gaseous alkali metal atoms to move between the two chambers, thus facilitating dynamic concentration regulation. By controlling the width and depth of the microchannel, the area of ​​the microchannel can be controlled, enabling the control of the movement rate of gaseous alkali metal atoms during subsequent regulation at a microscale, and precisely regulating the atomic concentration within the atomic gas chamber, thereby facilitating precise and controllable dynamic regulation.

[0044] like Figure 1 and Figure 2 As shown, in one embodiment of the present invention, the upper side of the laser reaction chamber and the upper side of the storage chamber are connected by a microchannel. By controlling the position of the microchannel, the present invention facilitates subsequent adjustment of the alkali metal atomic concentration in the laser reaction chamber through heating and cooling, thereby improving the accuracy of dynamic adjustment.

[0045] like Figure 1 and Figure 3 As shown, in one embodiment of the present invention, the atomic gas chamber for achieving dynamic concentration adjustment includes a heating structure; the heating structure is located above the cavity structure.

[0046] In this invention, the heating structure is preferably a heating coil or a laser heating structure; the metal in the heating coil is preferably platinum, gold, nickel, or a composite metal; the composite metal is preferably Ti / Au or Cr / Pt; the number of heating structures is preferably two; the two heating structures are preferably located directly above the laser reaction chamber and the storage chamber in the cavity structure, respectively; the heating structures are preferably located near the microchannel side. This invention, by setting heating structures, can regulate the chamber temperature of the atomic gas chamber. When it is necessary to increase the atomic concentration of alkali metal in the laser reaction chamber, the storage chamber is heated by the heating structure at the top of the chamber, causing the alkali metal in the storage chamber to vaporize, while simultaneously cooling the laser reaction chamber. The temperature gradient induces the gaseous metal to migrate from the storage chamber to the laser reaction chamber. Laser heating can more precisely focus on the surface of the alkali metal, rapidly heating it with a laser beam, causing it to vaporize and transfer to the laser reaction chamber. The advantages of laser heating lie in its high precision, rapid response, and localized heating capability.

[0047] In this invention, when the heating structure is preferably a heating coil, the shape of the heating coil is preferably helical; the diameter of the heating coil is preferably 100-200 μm; and the coil spacing of the heating coil is preferably ≤50 μm. As one embodiment of this invention, the diameter of the heating coil can be 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, or 190 μm; the coil spacing of the heating coil can be 1-50 μm, and can also be 2 μm, 3 μm, 4 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, or 45 μm. This invention, by controlling the dimensions of the heating structure, facilitates the control of the temperature of the reaction chamber.

[0048] like Figure 1 and Figure 3 As shown, in one embodiment of the present invention, the atomic gas chamber for achieving dynamic concentration adjustment includes a cooling structure; the cooling structure is located below the cavity structure.

[0049] In this invention, the cooling structure is preferably a cooling plate, a thermoelectric cooling structure, or a liquid cooling structure; the cooling plate is preferably a thermoelectric cooler (TEC) or a Peltier cooler; the size of the cooling plate is preferably (3-10) mm × (3-10) mm; the liquid cooling structure is preferably a micro liquid cooler; the number of cooling structures is preferably two; the two cooling structures are preferably located directly below the laser reaction chamber and the storage chamber in the cavity structure, respectively; the cooling structures are preferably located on the side away from the microchannel. As one embodiment of this invention, the size of the cooling plate can be 3 mm × 3 mm, 4 mm × 4 mm, 5 mm × 5 mm, 6 mm × 6 mm, 7 mm × 7 mm, 8 mm × 8 mm, 9 mm × 9 mm, or 10 mm × 10 mm. This invention reduces the concentration of alkali metal atoms in the laser reaction chamber by employing a cooling structure that utilizes the Peltier effect. The cooling structure allows for temperature regulation of the atomic gas chamber. When a reduction in the concentration is needed, the laser reaction chamber is heated while the storage chamber is cooled, reversing the temperature gradient. This causes the gaseous alkali metal in the laser reaction chamber to migrate towards the cold end and condense in the storage chamber, thereby reducing the concentration of alkali metal atoms in the laser reaction chamber. The direct cooling effect of the fluid allows for a faster temperature reduction, enabling precise adjustment of the atomic concentration in the laser reaction chamber. This provides a higher response speed to temperature changes and is suitable for various temperature control requirements and operating environments.

[0050] This invention provides heating and cooling structures for the laser reaction chamber and storage chamber respectively, allowing for heating or cooling of the two chambers depending on the specific circumstances. This creates a temperature difference, enabling reversible migration of atomic gas and thus adjusting the atomic concentration within the laser reaction chamber.

[0051] A cross-sectional view of the atomic gas chamber for dynamic concentration adjustment provided by this invention is shown below. Figure 4 As shown. By Figure 4 As can be seen, in the atomic gas chamber, the laser reaction chamber and the storage chamber are connected by a microchannel; a heating structure is set on the upper side of the laser reaction chamber and a cooling structure is set on the lower side, with the heating structure being closer to the microchannel; a heating structure is set on the upper side of the storage chamber and a cooling structure is set on the lower side, with the heating structure being closer to the microchannel.

[0052] The atomic gas chamber provided by this invention comprises two interconnected micro-cavities: a laser reaction chamber and a storage chamber. The laser reaction chamber is the core reaction region of the atomic clock, through which the laser beam passes and resonates with alkali metal atoms. The storage chamber is primarily used for the vaporization, condensation, and temporary storage of alkali metals, regulating the atomic concentration in the reaction region. The laser reaction chamber and the storage chamber are connected by microchannels, providing a pathway for the movement of alkali metal atoms within both chambers. By incorporating heating and cooling structures, the temperature difference between the two chambers can be precisely controlled, enabling reversible migration of alkali metal gas atoms and thus regulating the atomic concentration within the laser reaction chamber. The atomic gas chamber provided by this invention can dynamically adjust the distribution direction and concentration of gaseous metal within the chamber through a temperature control mechanism. It can rapidly respond to and precisely adjust the atomic concentration according to operational requirements, thereby meeting the high requirements of atomic clocks for atomic density stability and accuracy. This ensures that the atomic gas chamber can adapt to complex working environments, improving the system's reliability, stability, and the atomic clock's accuracy.

[0053] This invention also provides a method for preparing the atomic gas chamber with dynamic concentration adjustment as described in the above technical solution, comprising the following steps:

[0054] (1) A first protective layer is formed by coating a photoresist on the surface of the non-cavity structure of the substrate, and then the first etching is performed to obtain a cavity structure containing a laser reaction chamber and a storage chamber;

[0055] (2) In the cavity structure obtained in step (1), a second protective layer is formed by coating the non-microchannel portion with photoresist, and then a second etching is performed to form a microchannel between the laser reaction chamber and the storage chamber, thus obtaining a cavity structure with microchannels.

[0056] (3) Bond semiconductor glass to the lower surface of the cavity structure with microchannels obtained in step (2), then inject alkali metal into the laser reaction chamber, and finally bond semiconductor glass to the upper surface of the cavity structure with microchannels to obtain a closed structure.

[0057] (4) Install heating and cooling structures in the closed structure obtained in step (3) to obtain an atomic gas chamber that achieves dynamic concentration adjustment.

[0058] The present invention forms a first protective layer by coating a photoresist on the surface of a non-cavity structure of a substrate, and then performs a first etching to obtain a cavity structure containing a laser reaction chamber and a storage chamber.

[0059] In this invention, the substrate is preferably a silicon wafer; the thickness of the silicon wafer is preferably 0.5–5 mm. As one embodiment of this invention, the thickness of the silicon wafer can be 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, 1.2 mm, 1.5 mm, 1.8 mm, 2 mm, 2.2 mm, 2.5 mm, 2.8 mm, 3 mm, 3.2 mm, 3.5 mm, 3.8 mm, 4 mm, 4.2 mm, 4.5 mm, or 4.8 mm. This invention uses a silicon wafer as the main structure of the cavity; by controlling the thickness of the silicon wafer, the depth of the cavity structure can be controlled.

[0060] This invention does not impose any specific limitations on the composition of the photoresist; commercially available photoresists well-known to those skilled in the art can be used. In this invention, the thickness of the first protective layer is preferably 3–10 μm. As one embodiment of this invention, the thickness of the first protective layer can be 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, or 9 μm.

[0061] In this invention, the first etching method is preferably reactive ion etching (RIE) technology. In this invention, the first etching step includes a sequential etching step and a passivation step; the cavity pressure of the first etching step is preferably 1.3-4 Pa, more preferably 2-3 Pa; the RF source power of the first etching step is preferably 1500-3000 W, more preferably 2000-2500 W; the RF bias power of the first etching step is preferably 20-60 W, more preferably 40-50 W; the mesa temperature of the first etching step is preferably -10-20℃, more preferably 0-10℃; the gas used in the etching step is preferably SF6; the gas flow rate of the etching step is preferably 100-300 sccm, more preferably 150-200 sccm; the single etching time of the etching step is preferably 5-12 s, more preferably 8-10 s; the gas used in the passivation step is preferably C4F8; the gas flow rate of the passivation step is preferably 80-150 sccm, more preferably 100-120 sccm; the passivation time is preferably 3-8 s. This invention does not specifically limit the number of etching cycles in the first etching process; it can be adjusted according to the silicon wafer thickness and the target etching rate. In one embodiment, the number of etching cycles in the first etching process can be 1000–4000. This invention utilizes lower pressure to facilitate anisotropic etching and improve directionality; high power generates high-density plasma, determining the etching rate; controlling ion bombardment energy affects anisotropy and sidewall morphology, as excessive power may lead to micromasking; lower mesa temperature helps protect the passivation layer, suppresses lateral etching, and obtains more vertical sidewalls; the gas in the etching step provides fluorine radicals (F*), which react with silicon to generate volatile SiF4, the main etching gas; the gas in the passivation step decomposes within the chamber and deposits a Teflon-like fluorocarbon polymer layer on all surfaces (bottom and sidewalls) to protect the sidewalls.

[0062] In this invention, the dimensions of the laser reaction chamber and the storage chamber are preferably the same as those described above, and will not be repeated here.

[0063] After the first etching is completed, the present invention preferably further includes removing the first protective layer from the first etching product. The present invention does not have specific limitations on the specific operation of this removal, as long as the first protective layer can be completely removed without affecting the structure.

[0064] After obtaining the cavity structure, the present invention coats the non-microchannel portion of the cavity structure with photoresist to form a second protective layer, and then performs a second etching to form a microchannel between the laser reaction chamber and the storage chamber, thereby obtaining a cavity structure with microchannels.

[0065] This invention does not impose any specific limitations on the composition of the photoresist; commercially available photoresist well-known to those skilled in the art can be used. In this invention, the thickness of the second protective layer is preferably 3–10 μm. As one embodiment of this invention, the thickness of the second protective layer can be 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, or 9 μm.

[0066] In this invention, the second etching method is preferably reactive ion etching. In this invention, the parameters of the second etching are preferably the same as those of the first etching, and will not be repeated here.

[0067] In this invention, the dimensions of the microchannel are preferably the same as described above, and will not be repeated here. In this invention, the microchannel is preferably located above the laser reaction chamber and the storage chamber.

[0068] After the second etching is completed, the present invention preferably further includes removing the second protective layer from the second etching product. The present invention does not have specific limitations on the specific operation of this removal, as long as the second protective layer can be completely removed without affecting the structure.

[0069] After obtaining the cavity structure with microchannels, the present invention bonds semiconductor glass to the lower surface of the cavity structure with microchannels, then injects alkali metal into the cavity structure, and finally bonds semiconductor glass to the upper surface of the cavity structure with microchannels to obtain a closed structure.

[0070] In this invention, the thickness of the semiconductor glass is preferably 1-2 mm, more preferably 1.2-1.8 mm, and even more preferably 1.5 mm. This invention does not impose any special limitations on the length and width of the semiconductor glass, as long as it can completely enclose the cavity structure. This invention does not impose any special limitations on the specific composition of the semiconductor glass; commercially available semiconductor glass well-known to those skilled in the art can be used.

[0071] In this invention, the bonding temperature of the bonding semiconductor glass is preferably 300–400°C; the bonding time of the bonding semiconductor glass is preferably 10–15 min; and the bonding pressure of the bonding semiconductor glass is preferably 50–100 kPa. As one embodiment of this invention, the bonding temperature of the bonding semiconductor glass can be 310°C, 320°C, 330°C, 340°C, 350°C, 360°C, 370°C, 380°C, or 390°C; the bonding time of the bonding semiconductor glass can be 11 min, 12 min, 13 min, or 14 min; and the bonding pressure of the bonding semiconductor glass can be 55 kPa, 60 kPa, 65 kPa, 70 kPa, 75 kPa, 80 kPa, 85 kPa, 90 kPa, or 95 kPa. By controlling the process parameters during bonding, this invention allows the semiconductor glass and the silicon wafer to form a unified structure, thereby improving the sealing effect.

[0072] In this invention, the alkali metal preferably includes any one or more of rubidium, potassium, lithium, sodium, cesium, and francium, and more preferably rubidium.

[0073] In this invention, the preferred method for injecting the alkali metal is through reactive evaporation. This invention does not impose specific limitations on the specific process parameters for injecting the alkali metal through reactive evaporation; these parameters can be determined based on the application of the atomic clock and common knowledge in the field. As one embodiment of this invention, the amount of alkali metal injected can be 10 nanograms to 1 microgram; the baseline vacuum level during alkali metal injection can be ≤10. -8 mbar; the preferred temperature for alkali metal injection is 150–250°C.

[0074] After obtaining the closed structure, the present invention installs a heating structure and a cooling structure in the closed structure to obtain an atomic gas chamber that realizes dynamic concentration adjustment.

[0075] In this invention, the position, type, quantity, and size of the heating structure are preferably the same as described above, and will not be repeated here. In this invention, when the heating structure is a heating coil, the preferred method for installing the heating coil is as follows: first, positive photoresist is spin-coated onto the surface of the semiconductor glass to form an undercut profile, followed by pre-baking to form a stable photoresist film; then, a mask with a heating wire coil pattern is installed, and ultraviolet exposure, development, and rinsing and drying are performed sequentially; finally, metal deposition, ultrasonic stripping, and cleaning are performed sequentially to obtain the heating coil; the positive photoresist is preferably AZ 1500 series or S1813; the pre-baking temperature is preferably 90-110℃; the pre-baking time is preferably 60-90s; the developer used for development is preferably AZ 400K diluent or MF-26A; the development time is preferably 10-60s; the rinsing and drying is preferably rinsing with deionized water and then drying with nitrogen; the metal deposition method is preferably electron beam evaporation or thermal evaporation. In this invention, ultraviolet exposure causes a photochemical reaction in the photoresist of the irradiated area, increasing its solubility in the developing solution. The developing solution dissolves the photoresist in the exposed area, thereby exposing the area where metal deposition is desired. This invention does not impose any specific limitations on the ultrasonic stripping operation; any ultrasonic stripping operation well-known to those skilled in the art, capable of removing other materials outside the metal coil, is acceptable.

[0076] In this invention, the location, type, quantity, and size of the cooling structure are preferably the same as described above, and will not be repeated here. In this invention, the cooling structure is preferably installed using an integrated method. This invention does not impose any special limitations on the specific operation of the integrated method; it can be fabricated using conventional integrated methods.

[0077] The process flow diagram for preparing atomic gas cells with dynamic concentration adjustment provided by this invention is as follows: Figure 5 As shown. By Figure 5As can be seen, this invention forms a protective layer by coating a silicon wafer with photoresist. During the etching process, the protective layer prevents the underlying silicon wafer from being etched, while the unprotected portion of the silicon wafer is etched, thus forming a laser reaction chamber and a storage chamber. After removing the protective layer, photoresist is coated on the remaining areas except for those where microchannels are to be formed to form a protective layer. Etching is then performed to etch microchannels between the laser reaction chamber and the storage chamber. The lower part of the silicon wafer represents the depth of the microchannels connecting the two chambers. The laser reaction chamber and the storage chamber are connected through the microchannels. Finally, the protective layer is removed, resulting in a cavity with microchannels. The structure is constructed by bonding semiconductor glass to the lower surface of the structure. Before sealing, alkali metal is injected into the laser reaction chamber. Finally, semiconductor glass is bonded to the upper surface of the structure to form a closed structure of laser reaction chamber, storage chamber, and microchannel. This prevents the escape of alkali metal and the entry of impurities into the closed chamber. Finally, a heating structure is installed on the side near the microchannel, directly above the laser reaction chamber and storage chamber, and a cooling structure is installed on the side away from the microchannel, directly below the laser reaction chamber and storage chamber, to obtain an atomic gas chamber that achieves dynamic concentration regulation.

[0078] The three-dimensional diagram of the atomic gas chamber for dynamic concentration adjustment before cutting provided by this invention is shown below. Figure 6 As shown. By Figure 6 As can be seen, the preparation method provided by the present invention can prepare multiple sets of atomic gas cells on a silicon wafer, and then obtain multiple atomic gas cells by simple cutting, which effectively improves the preparation efficiency of atomic gas cells and is conducive to large-scale industrial promotion.

[0079] This invention utilizes MEMS (Micro-Electro-Mechanical Systems) technology to fabricate miniature atomic chambers, achieving high integration, simplifying the manufacturing process, reducing production costs, and enhancing system manufacturability and consistency. By combining MEMS technology with an innovative heating and cooling mechanism, this invention achieves precise control of the atomic concentration within the miniature atomic chamber. Through a precisely designed heating and cooling system, rapid response and precise control of atomic concentration can be achieved at the microscale, significantly improving the performance and stability of the atomic chamber.

[0080] The present invention also provides the application of the atomic gas cell for dynamic concentration regulation described in the above technical solution or the atomic gas cell for dynamic concentration regulation prepared by the preparation method described in the above technical solution in atomic clocks.

[0081] The present invention does not impose any special limitation on the specific application method, and any application method known to those skilled in the art can be used.

[0082] The technical solutions of this invention will be clearly and completely described below with reference to the embodiments thereof. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0083] Example 1

[0084] An atomic gas chamber for dynamic concentration regulation comprises a cavity structure, a heating structure above the cavity structure, and a cooling structure below the cavity structure; the cavity structure contains an alkali metal, wherein the alkali metal is rubidium.

[0085] The cavity structure consists of a laser reaction chamber, a storage chamber, and a microchannel; the upper side of the laser reaction chamber and the upper side of the storage chamber are connected by the microchannel.

[0086] The laser reaction chamber and the storage chamber are both cylindrical in shape, and are vertically parallel and located on the same parallel plane. The height of the laser reaction chamber and the storage chamber are both 5 mm and the diameter is 3 mm. The height of the microchannel is 200 μm and the width of the microchannel is 500 μm.

[0087] The heating structure is a heating coil, which is spiral in shape, with a diameter of 150 μm and a coil spacing of 30 μm. There are two heating structures, which are located directly above the laser reaction chamber and the storage chamber, respectively, and are located near the microchannel.

[0088] The cooling structure is a cooling plate, which is a thermoelectric cooler (TEC) with a size of 5mm×5mm; there are two cooling structures, which are located directly below the laser reaction chamber and the storage chamber, respectively, and are located away from the microchannel.

[0089] The method for preparing the atomic gas chamber that enables dynamic concentration adjustment comprises the following steps:

[0090] (1) A first protective layer with a thickness of 10 μm is formed by coating photoresist on the non-cavity structure surface of a substrate with a thickness of 5 mm. Then, the first protective layer is removed by reactive ion etching (RIE) to obtain a cavity structure containing a laser reaction chamber and a storage chamber. The substrate is a silicon wafer. The first etching is performed by reactive ion etching (RIE). The first etching consists of an etching step and a passivation step performed sequentially. The cavity pressure of the first etching is 3 Pa, the RF source power of the first etching is 2500 W, the RF bias power of the first etching is 50 W, and the mesa temperature of the first etching is -10 °C. The gas used in the etching step is SF6 with a gas flow rate of 200 sccm and a single etching time of 10 s. The gas used in the passivation step is C4F8 with a gas flow rate of 100 sccm and a passivation time of 8 s.

[0091] (2) In the cavity structure obtained in step (1), a second protective layer with a thickness of 10 μm is formed by coating the non-microchannel portion with photoresist. Then, a second etching is performed by reactive ion etching (RIE) to form a microchannel between the laser reaction chamber and the storage chamber. The second protective layer is then removed to obtain a cavity structure with microchannels. The second etching is performed by reactive ion etching (RIE). The second etching consists of an etching step and a passivation step performed sequentially. The cavity pressure for the second etching is 3 Pa, the RF source power for the second etching is 2500 W, the RF bias power for the second etching is 50 W, and the mesa temperature for the second etching is -10 °C. The gas used in the etching step is SF6 with a flow rate of 200 sccm and a single etching time of 10 s. The gas used in the passivation step is C4F8 with a flow rate of 100 sccm and a passivation time of 8 s.

[0092] (3) A semiconductor glass is bonded to the lower surface of the cavity structure with microchannels obtained in step (2), and then rubidium metal is injected into the laser reaction chamber through reactive evaporation. Finally, a semiconductor glass is bonded to the upper surface of the cavity structure with microchannels to obtain a closed structure. The thickness of the semiconductor glass is 1.5 mm. The bonding temperature of the bonding semiconductor glass is independently 350 °C, the bonding time is independently 15 min, and the bonding pressure is independently 100 kPa.

[0093] (4) Install a heating structure and a cooling structure in the closed structure obtained in step (3) to obtain an atomic gas chamber that achieves dynamic concentration adjustment; the heating structure is a heating coil, which is installed by integrating a micro coil through photolithography and metal deposition technology; the cooling structure is a cooling plate, which is installed by integration.

[0094] Application Example 1

[0095] The dynamic adjustment performance of the atomic gas chamber provided in Example 1 was tested. The storage chamber was heated by a heating structure above it to 80°C and held at that temperature for 4 minutes, causing the rubidium metal inside the storage chamber to vaporize. As the temperature increased, the concentration of rubidium atoms in the storage chamber changed as follows: Figure 7 As shown, it can be seen that the concentration of rubidium atoms increases exponentially with increasing heating temperature, with the concentration of rubidium atoms in the storage chamber increasing from approximately 10 at 25°C. 15 When the atoms / m3 order increases to the 10 at 80℃ 17 atoms / m 3 The magnitude indicates that the increase in temperature significantly enhanced the evaporation process of rubidium atoms, increasing the number of gaseous atoms by approximately 100 times. Simultaneously, the laser reaction chamber was cooled by a cooling structure located beneath it, maintaining the temperature at 5°C. As the temperature decreased, the concentration of rubidium atoms within the laser reaction chamber changed as follows: Figure 8 As shown, the concentration of rubidium atoms decreases exponentially with decreasing temperature, decreasing from approximately 10 at 25°C. 15 atoms / m 3 When the magnitude drops to 5℃, 10 12 atoms / m 3 The magnitude of the temperature difference indicates that the decrease in temperature causes gaseous atoms to condense into the condensed phase, reducing the number of atoms by approximately 1000 times, demonstrating the strong influence of temperature. Simultaneously, the rubidium atom concentrations at 80℃ and 5℃ differ by approximately five orders of magnitude. Due to the temperature gradient between the storage chamber and the laser reaction chamber, gaseous rubidium is induced to migrate from the storage chamber to the laser reaction chamber, increasing the concentration of metallic rubidium atoms in the laser reaction chamber. Subsequently, the storage chamber is cooled by a cooling structure below it, maintaining the temperature at 5℃, while the laser reaction chamber is heated by a heating structure above it, raising the temperature of the storage chamber to 80℃ and holding it at that temperature for 4 minutes. This temperature gradient between the storage chamber and the laser reaction chamber induces gaseous rubidium to migrate from the laser reaction chamber back to the storage chamber, reducing the concentration of metallic rubidium atoms in the laser reaction chamber. The atomic chamber provided by this invention can dynamically adjust the distribution direction and concentration of gaseous metals in the chamber through a temperature control mechanism. It can respond quickly and adjust the atomic concentration precisely according to the working requirements, thereby meeting the high requirements of atomic clock for atomic density stability and accuracy. This ensures that the atomic chamber can adapt to complex working environments and improves the reliability, stability and accuracy of the system and the atomic clock.

[0096] Example 2

[0097] An atomic gas chamber for dynamic concentration regulation comprises a cavity structure, a heating structure above the cavity structure, and a cooling structure below the cavity structure; the cavity structure contains an alkali metal, wherein the alkali metal is rubidium.

[0098] The cavity structure consists of a laser reaction chamber, a storage chamber, and a microchannel; the upper side of the laser reaction chamber and the upper side of the storage chamber are connected by the microchannel.

[0099] Both the laser reaction chamber and the storage chamber are cylindrical in shape, and are vertically parallel and located on the same parallel plane. The height of both the laser reaction chamber and the storage chamber is 5 mm, and the diameter is 2 mm. The height of the microchannel is 150 μm, and the width of the microchannel is 400 μm.

[0100] The heating structure is a heating coil, which is spiral in shape, with a diameter of 150 μm and a coil spacing of 30 μm. There are two heating structures, which are located directly above the laser reaction chamber and the storage chamber, respectively, and are located near the microchannel.

[0101] The cooling structure is a cooling plate, which is a thermoelectric cooler (TEC) with a size of 5mm×5mm; there are two cooling structures, which are located directly below the laser reaction chamber and the storage chamber, respectively, and are located away from the microchannel.

[0102] The preparation method of the atomic gas chamber that achieves dynamic concentration adjustment is the same as in Example 1, and the etching time in the second etching step is 10s.

[0103] Application Example 2

[0104] The dynamic adjustment performance of the atomic gas chamber provided in Example 2 was tested. The storage chamber was heated to 80°C using a heating structure above it, and held at that temperature for 4 minutes to vaporize the metallic rubidium inside the storage chamber. The change in rubidium atom concentration within the storage chamber as the temperature increased was as follows: Figure 9 As shown, the concentration of rubidium atoms exhibits an exponential growth trend with increasing heating temperature, increasing from 2.5 × 10⁻⁶ at 25°C. 15 The atoms / m³ scale increases to 6.67 × 10⁻⁶ at 80 °C. 16 atoms / m 3 The magnitude of the increase, approximately 27-fold, indicates that the temperature increase significantly enhanced the evaporation process of rubidium atoms. Simultaneously, the laser reaction chamber was cooled by a cooling structure beneath it, maintaining the temperature at 5°C. As the temperature decreased, the concentration of rubidium atoms within the laser reaction chamber changed as follows: Figure 10 As shown, the concentration of rubidium atoms decreases exponentially with decreasing temperature, from 2.5 × 10⁻⁶ at 25℃ to a concentration of rubidium atoms in the laser reaction chamber. 15 atoms / m 3 The magnitude drops to 3.05 × 10 at 5°C. 12 atoms / m 3 The temperature drop is on the order of magnitude, approximately 21,600 times lower than at 80℃, indicating that the decrease in temperature promotes the condensation of gaseous atoms into the condensed phase, demonstrating the strong influence of temperature. Simultaneously, the rubidium atom concentration at 80℃ and 5℃ differs by about four orders of magnitude. Due to the temperature gradient between the storage chamber and the laser reaction chamber, gaseous rubidium is induced to migrate from the storage chamber to the laser reaction chamber, increasing the concentration of metallic rubidium atoms in the laser reaction chamber. Subsequently, the storage chamber is cooled by a cooling structure below it, maintaining the temperature at 5℃, while the laser reaction chamber is heated by a heating structure above it, raising the temperature of the storage chamber to 80℃ and holding it at that temperature for 4 minutes. This temperature gradient between the storage chamber and the laser reaction chamber induces the migration of gaseous rubidium from the laser reaction chamber back to the storage chamber, reducing the concentration of metallic rubidium atoms in the laser reaction chamber. The atomic chamber provided by this invention can dynamically adjust the distribution direction and concentration of gaseous metals in the chamber through a temperature control mechanism. It can respond quickly and adjust the atomic concentration precisely according to the working requirements, thereby meeting the high requirements of atomic clock for atomic density stability and accuracy. This ensures that the atomic chamber can adapt to complex working environments and improves the reliability, stability and accuracy of the system and the atomic clock.

[0105] Example 3

[0106] An atomic gas chamber for dynamic concentration regulation comprises a cavity structure, a heating structure above the cavity structure, and a cooling structure below the cavity structure; the cavity structure contains an alkali metal, wherein the alkali metal is rubidium.

[0107] The cavity structure consists of a laser reaction chamber, a storage chamber, and a microchannel; the upper side of the laser reaction chamber and the upper side of the storage chamber are connected by the microchannel.

[0108] Both the laser reaction chamber and the storage chamber are cylindrical in shape, and are vertically parallel and located on the same parallel plane. The height of both the laser reaction chamber and the storage chamber is 5 mm, and the diameter is 2 mm. The height of the microchannel is 250 μm, and the width of the microchannel is 800 μm. The microchannel is located on the upper side of the laser reaction chamber and the storage chamber.

[0109] The heating structure is a heating coil, which is spiral in shape, with a diameter of 150 μm and a coil spacing of 30 μm. There are two heating structures, which are located directly above the laser reaction chamber and the storage chamber, respectively, and are located near the microchannel.

[0110] The cooling structure is a cooling plate, which is a thermoelectric cooler (TEC) with a size of 5mm×5mm; there are two cooling structures, which are located directly below the laser reaction chamber and the storage chamber, respectively, and are located away from the microchannel.

[0111] The preparation method of the atomic gas chamber that achieves dynamic concentration adjustment is the same as that in Example 1.

[0112] Application Example 3

[0113] The dynamic adjustment performance of the atomic gas chamber provided in Example 3 was tested. The storage chamber was heated by a heating structure above it to 80°C and held at that temperature for 4 minutes, causing the rubidium metal inside the storage chamber to vaporize. The change in the concentration of rubidium atoms inside the storage chamber as the temperature increased was as follows: Figure 11 As shown, the concentration of rubidium atoms exhibits an exponential growth trend with increasing heating temperature, increasing from 2.5 × 10⁻⁶ at 25°C. 15 The atoms / m³ scale increases to 6.7 × 10⁻⁶ at 80 °C. 16 atoms / m 3 The magnitude of the increase, approximately 27-fold, indicates that the temperature increase significantly enhanced the evaporation process of rubidium atoms. Simultaneously, the laser reaction chamber was cooled by a cooling structure beneath it, maintaining the temperature at 5°C. As the temperature decreased, the concentration of rubidium atoms within the laser reaction chamber changed as follows: Figure 12 As shown, the concentration of rubidium atoms decreases exponentially with decreasing temperature, from 2.5 × 10⁻⁶ at 25℃ to a concentration of rubidium atoms in the laser reaction chamber. 15 atoms / m 3 The magnitude drops to 3.05 × 10 at 5°C. 12 atoms / m 3The temperature drop is on the order of magnitude, approximately 21,600 times lower than at 80℃, indicating that the decrease in temperature promotes the condensation of gaseous atoms into the condensed phase, demonstrating the strong influence of temperature. Simultaneously, the rubidium atom concentration at 80℃ and 5℃ differs by about four orders of magnitude. Due to the temperature gradient between the storage chamber and the laser reaction chamber, gaseous rubidium is induced to migrate from the storage chamber to the laser reaction chamber, increasing the concentration of metallic rubidium atoms in the laser reaction chamber. Subsequently, the storage chamber is cooled by a cooling structure below it, maintaining the temperature at 5℃, while the laser reaction chamber is heated by a heating structure above it, raising the temperature of the storage chamber to 80℃ and holding it at that temperature for 4 minutes. This temperature gradient between the storage chamber and the laser reaction chamber induces the migration of gaseous rubidium from the laser reaction chamber back to the storage chamber, reducing the concentration of metallic rubidium atoms in the laser reaction chamber. The atomic chamber provided by this invention can dynamically adjust the distribution direction and concentration of gaseous metals in the chamber through a temperature control mechanism. It can respond quickly and adjust the atomic concentration precisely according to the working requirements, thereby meeting the high requirements of atomic clock for atomic density stability and accuracy. This ensures that the atomic chamber can adapt to complex working environments and improves the reliability, stability and accuracy of the system and the atomic clock.

[0114] Example 4

[0115] An atomic gas chamber for dynamic concentration regulation comprises a cavity structure, a heating structure above the cavity structure, and a cooling structure below the cavity structure; the cavity structure contains an alkali metal, wherein the alkali metal is rubidium.

[0116] The cavity structure consists of a laser reaction chamber, a storage chamber, and a microchannel; the upper side of the laser reaction chamber and the upper side of the storage chamber are connected by the microchannel.

[0117] The laser reaction chamber and the storage chamber are both cylindrical in shape, and are vertically parallel and located on the same parallel plane. The height of the laser reaction chamber and the storage chamber is 5 mm and the diameter is 1.5 mm. The height of the microchannel is 250 μm and the width of the microchannel is 800 μm. The microchannel is located on the upper side of the laser reaction chamber and the storage chamber.

[0118] The heating structure is a heating coil, which is spiral in shape, with a diameter of 150 μm and a coil spacing of 30 μm. There are two heating structures, which are located directly above the laser reaction chamber and the storage chamber, respectively, and are located near the microchannel.

[0119] The cooling structure is a cooling plate, which is a thermoelectric cooler (TEC) with a size of 5mm×5mm; there are two cooling structures, which are located directly below the laser reaction chamber and the storage chamber, respectively, and are located away from the microchannel.

[0120] The preparation method of the atomic gas chamber that achieves dynamic concentration adjustment is the same as that in Example 1.

[0121] Example 5

[0122] An atomic gas chamber for dynamic concentration regulation comprises a cavity structure, a heating structure above the cavity structure, and a cooling structure below the cavity structure; the cavity structure contains an alkali metal, wherein the alkali metal is rubidium.

[0123] The cavity structure consists of a laser reaction chamber, a storage chamber, and a microchannel; the upper side of the laser reaction chamber and the upper side of the storage chamber are connected by the microchannel.

[0124] Both the laser reaction chamber and the storage chamber are cylindrical in shape, vertically parallel, and located on the same parallel plane. The height of both the laser reaction chamber and the storage chamber is 5 mm, and the diameter is 1.2 mm. The height of the microchannel is 300 μm, and the width of the microchannel is 700 μm. The microchannel is located on the upper side of the laser reaction chamber and the storage chamber.

[0125] The heating structure is a heating coil, which is spiral in shape, with a diameter of 150 μm and a coil spacing of 30 μm. There are two heating structures, which are located directly above the laser reaction chamber and the storage chamber, respectively, and are located near the microchannel.

[0126] The cooling structure is a cooling plate, which is a thermoelectric cooler (TEC) with a size of 5mm×5mm; there are two cooling structures, which are located directly below the laser reaction chamber and the storage chamber, respectively, and are located away from the microchannel.

[0127] The preparation method of the atomic gas chamber that achieves dynamic concentration adjustment is the same as that in Example 1.

[0128] After conducting corresponding tests on the atomic gas chambers provided in Examples 4 and 5, they showed a similar trend to the atomic gas chamber in Example 1, indicating that the atomic gas chamber provided by the present invention can achieve dynamic concentration adjustment of alkali metal atoms.

[0129] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. An atomic gas chamber for achieving dynamic concentration adjustment, characterized in that, It comprises a cavity structure, a heating structure located above the cavity structure, and a cooling structure located below the cavity structure; the cavity structure contains an alkali metal; The cavity structure includes a laser reaction chamber, a storage chamber, and a microchannel; the laser reaction chamber and the storage chamber are axially parallel and located in the same parallel plane; the laser reaction chamber and the storage chamber are connected by the microchannel; The laser reaction chamber and the storage chamber are independently cylindrical in shape; the height of the laser reaction chamber and the storage chamber is independently 0.5~5mm; the diameter of the laser reaction chamber and the storage chamber is independently 2~8mm. The number of heating structures is two; the two heating structures are located directly above the laser reaction chamber and the storage chamber in the cavity structure, respectively; the number of cooling structures is two; the two cooling structures are located directly below the laser reaction chamber and the storage chamber in the cavity structure, respectively; the cooling structures are located on the side away from the microchannel.

2. The atomic gas chamber for dynamic concentration adjustment according to claim 1, characterized in that, The alkali metals include any one or more of rubidium, potassium, lithium, sodium, cesium, and francium.

3. The atomic gas chamber for dynamic concentration adjustment according to claim 1, characterized in that, The height of the microchannel is 100~300μm, and the width of the microchannel is 50~1000μm.

4. The method for preparing the atomic gas chamber for dynamic concentration adjustment as described in any one of claims 1 to 3, characterized in that, Includes the following steps: (1) A first protective layer is formed by coating a photoresist on the surface of the non-cavity structure of the substrate, and then the first etching is performed to obtain a cavity structure containing a laser reaction chamber and a storage chamber; (2) In the cavity structure obtained in step (1), a second protective layer is formed by coating the non-microchannel portion with photoresist, and then a second etching is performed to form a microchannel between the laser reaction chamber and the storage chamber, thereby obtaining a cavity structure with microchannels; (3) Bond semiconductor glass to the lower surface of the cavity structure with microchannels obtained in step (2), then inject alkali metal into the laser reaction chamber, and finally bond semiconductor glass to the upper surface of the cavity structure with microchannels to obtain a closed structure. (4) Install heating and cooling structures in the closed structure obtained in step (3) to obtain an atomic gas chamber that achieves dynamic concentration adjustment.

5. The preparation method according to claim 4, characterized in that, The first etching in step (1) and the second etching in step (2) are independently reactive ion etching techniques.

6. The preparation method according to claim 4, characterized in that, In step (3), the bonding temperature of the bonded semiconductor glass is independently 300~400℃, the bonding time is independently 10~15min, and the bonding pressure is independently 50~100kPa.

7. The application of the atomic gas cell with dynamic concentration regulation as described in any one of claims 1 to 3, or the atomic gas cell with dynamic concentration regulation prepared by the preparation method described in any one of claims 4 to 6, in atomic clocks.

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