A short circuit reliability optimization method, device, system and medium of a power module

Abstract

The present application relates to the technical field of circuit simulation optimization, in particular to a short-circuit reliability optimization method, device, system and medium for a power module, the method comprising: obtaining a selected circuit topology, performing three-dimensional modeling on an IGBT power module in the circuit topology to obtain a three-dimensional model; performing finite element simulation on the three-dimensional model using a finite element simulation tool to obtain a non-uniform current simulation result; determining a temperature rise of the IGBT power module generated at a short-circuit moment according to the non-uniform current simulation result and the heat capacity of each sub-chip; and determining whether the IGBT power module has a short-circuit failure risk according to the non-uniform current simulation result and the temperature rise, and determining that the three-dimensional model meets the structural design requirements in the case that the IGBT power module does not have a short-circuit failure risk. The present application can avoid the occurrence of product failure problems caused by excessively high local current density, shorten the development cycle and save development expenses.

Description

Technical Field

[0001] This invention relates to the field of circuit simulation and optimization technology, specifically to a method, apparatus, system, and medium for optimizing the short-circuit reliability of a power module. Background Technology

[0002] In emerging power systems such as flexible DC transmission, wind power, photovoltaics, and battery energy storage, power electronic module converters with IGBTs at their core are accounting for an increasingly large proportion. Statistics show that IGBT devices account for 42% of all power semiconductor devices used. Against this backdrop, the reliability of IGBTs is becoming increasingly important. Especially when an IGBT is subjected to short-circuit current, its ability to reliably turn off without causing damage has become a key indicator for evaluating the performance of IGBTs and the quality of power unit modules.

[0003] Under normal circumstances, a short circuit releases extremely powerful energy. If a short circuit failure occurs, it can not only cause the IGBT module to explode, but also damage the connecting copper busbars, structural components, and even the supporting capacitors. Although IGBT drivers can provide short-circuit protection to some extent, if a short circuit occurs due to severe current unevenness among the internal IGBT chips caused by an unreasonable structural design, resulting in a static latch-up effect, the IGBT driver cannot provide protection. Therefore, it is necessary to avoid severe current unevenness among the internal IGBT chips under short-circuit conditions in the structural design.

[0004] The conventional design method for IGBT power modules in related technologies involves a symmetrical design based on experience, followed by prototyping, testing, and redesigning the structure if problems are found. This process is repeated, involving prototyping and testing again. If problems are found during testing, the same steps must be repeated. This process is both time-consuming and costly. Summary of the Invention

[0005] In view of this, the purpose of the embodiments of the present invention is to provide a method, apparatus, system and medium for optimizing the short-circuit reliability of power modules, so as to solve one or more technical problems existing in the prior art and provide at least one beneficial option or create conditions.

[0006] On one hand, embodiments of the present invention provide a method for optimizing the short-circuit reliability of a power module.

[0007] The selected circuit topology is obtained, and the IGBT power modules in the circuit topology are modeled in three dimensions to obtain a three-dimensional model.

[0008] Finite element simulation tools were used to perform finite element simulation of the short-circuit current non-uniformity of the three-dimensional model, and the simulation results of the non-uniformity were obtained.

[0009] The temperature rise of the IGBT power module at the moment of short circuit is determined based on the simulation results of uneven flow and the thermal capacity of each sub-chip.

[0010] Based on the simulation results of uneven flow and temperature rise, it is determined whether the IGBT power module has a short-circuit failure risk. If it is determined that the IGBT power module has no short-circuit failure risk, it is determined that the three-dimensional model meets the structural design requirements.

[0011] Optionally, the step of obtaining the selected circuit topology and performing three-dimensional modeling of the IGBT power modules in the circuit topology to obtain a three-dimensional model includes:

[0012] Obtain a template set containing multiple circuit topologies, and select the circuit topology that matches the project requirements from the template set;

[0013] Select the appropriate IGBT power module model for the chosen circuit topology and determine whether parallel design of the IGBT power modules is required.

[0014] Select the model and calculate the parameters of the remaining components in the circuit topology;

[0015] With the goals of maximizing the consistency and symmetry of the positive and negative stacked busbar design, maximizing the consistency of the length of the connecting copper busbar between the stacked busbar and the IGBT power terminal, maximizing the width and thickness of the IGBT power terminal being close to the busbar, and minimizing the stray inductance of the IGBT power circuit, a three-dimensional model of the IGBT power module is obtained by using three-dimensional modeling software.

[0016] Optionally, the step of using a finite element simulation tool to perform finite element simulation of the short-circuit current unevenness of the three-dimensional model to obtain the unevenness simulation results includes:

[0017] The 3D model is processed to suit finite element structural analysis, resulting in a processed 3D model.

[0018] Set simulation material properties and conductivity properties for the IGBT power module, copper busbar, and insulating material in the processed 3D model;

[0019] The boundary conditions and short-circuit current excitation source of the finite element simulation model are set, and the finite element simulation model is analyzed and meshed before simulation is performed to obtain the simulation results of non-uniform flow.

[0020] Optionally, the short-circuit current is set according to the following formula:

[0021] ;

[0022] In the formula: This is the short-circuit current. This is the maximum short-circuit current; This is a parameter that determines the current rise slope. This is the midpoint of the current rise slope; The parameter that determines the slope of the current drop; This is the midpoint of the current drop slope; This is the short-circuit simulation time.

[0023] Optionally, determining the temperature rise of the IGBT power module at the moment of short circuit based on the simulation results of uneven flow and the thermal capacity of each sub-chip includes:

[0024] Obtain the number, material density, specific heat capacity, and volume parameters of the sub-chips in the IGBT power module, and calculate the heat capacity of each sub-chip based on the material density, specific heat capacity, and volume parameters;

[0025] Set the short-circuit voltage, short-circuit current, short-circuit time, and initial ambient temperature for testing the IGBT power module. Determine the temperature rise of the IGBT power module based on the non-uniform current simulation results, short-circuit voltage, short-circuit current, and short-circuit time.

[0026] Optionally, the temperature rise of the IGBT power module is calculated using the following formula:

[0027] ;

[0028] In the formula: The temperature rise of the IGBT power module is given by n, where n is the number of sub-chips in the IGBT power module that experience uneven current flow, and t is the short-circuit time. For short-circuit power, , This is the short-circuit current. C is the short-circuit voltage; C is the thermal capacitance of a single sub-chip. c is the specific heat capacity of the sub-chip, m is the mass of the sub-chip, ρ is the material density of the sub-chip, and v is the volume of the sub-chip.

[0029] Optionally, determining whether the IGBT power module has a short-circuit failure risk based on the uneven flow simulation results and temperature rise includes:

[0030] If the current sharing of each sub-chip in the IGBT module is greater than the current sharing threshold, and the temperature rise generated by the IGBT power module at the moment of short circuit does not exceed the temperature threshold, then it is determined that the IGBT power module has no risk of short circuit failure.

[0031] On the other hand, embodiments of the present invention provide a short-circuit reliability optimization device for a power module, the device comprising:

[0032] The first module is used to obtain the selected circuit topology, perform three-dimensional modeling of the IGBT power modules in the circuit topology, and obtain a three-dimensional model.

[0033] The second module is used to perform finite element simulation of the short-circuit current uneven flow rate on the three-dimensional model using finite element simulation tools, and obtain the uneven flow rate simulation results.

[0034] The third module is used to determine the temperature rise of the IGBT power module at the moment of short circuit based on the simulation results of uneven flow and the thermal capacity of each sub-chip.

[0035] The fourth module is used to determine whether the IGBT power module has a short-circuit failure risk based on the uneven flow simulation results and temperature rise. If it is determined that the IGBT power module has no short-circuit failure risk, the three-dimensional model is determined to meet the structural design requirements.

[0036] On the other hand, embodiments of the present invention provide a short-circuit reliability optimization system for a power module, comprising:

[0037] At least one processor;

[0038] At least one memory for storing at least one program;

[0039] When the at least one program is executed by the at least one processor, the at least one processor performs the method described above.

[0040] On the other hand, embodiments of the present invention provide a computer-readable storage medium storing a processor-executable program, which, when executed by a processor, is used to perform the above-described method.

[0041] The embodiments of the present invention have the following beneficial effects:

[0042] This invention proposes a method, apparatus, system, and medium for optimizing the short-circuit reliability of power modules. Addressing the short-circuit failure problem caused by uneven current distribution in IGBT modules, this invention employs three core steps of optimized design and calculation: "structural symmetry, equal impedance circuit and low inductance circuit design," "finite element short-circuit current characteristic simulation," and "IGBT chip short-circuit power and temperature rise calculation." This can prevent excessive current stress concentration during IGBT short circuits at the design stage, avoiding product failures caused by excessively high local current density. Not only can it prevent major problems at the design stage, but more importantly, it can shorten the development cycle and save development costs. Attached Figure Description

[0043] Figure 1 This is a flowchart illustrating the steps of a short-circuit reliability optimization method for a power module provided in an embodiment of the present invention.

[0044] Figure 2 The circuit topologies of two-level single-phase and three-phase bridge power modules are composed of IGBT two-level H-bridge circuits;

[0045] Figure 3 The circuit topology of a three-phase bridge power module is composed of IGBT three-level NPC1 type bridge circuit;

[0046] Figure 4 The circuit topology of a three-phase bridge power module is composed of IGBT three-level ANPC type bridge circuit;

[0047] Figure 5 This is a diagram showing the internal chip layout of a low-power IGBT.

[0048] Figure 6 This is a diagram showing the internal chip layout of a high-power IGBT model.

[0049] Figure 7 This is a schematic diagram of a short-circuit test for a two-level single-transistor IGBT.

[0050] Figure 8 This is a schematic diagram of a short-circuit test for a two-level parallel IGBT.

[0051] Figure 9 This is a schematic diagram of short-circuit failure modes;

[0052] Figure 10 Simulation analysis cloud diagram of current density for a two-level IGBT module with substandard structural design;

[0053] Figure 11 Simulation analysis cloud diagram of current density for a two-level IGBT module with qualified structural design;

[0054] Figure 12 This is a structural block diagram of a short-circuit reliability optimization device for a power module provided in an embodiment of the present invention. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0056] It should be noted that although the device diagram shows a modular division and the flowchart illustrates a logical order, in some cases, the steps shown or described may be performed in a different order than the modular division in the device or the order shown in the flowchart. The terms "first," "second," etc., used in the specification, claims, and the aforementioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0058] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0059] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically independent entities. That is, these functional entities can be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0060] The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily have to be performed in the described order. For example, some operations / steps can be broken down, while others can be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0061] In the field of power electronics, power modules composed of two-phase or three-phase bridge circuits with IGBTs as the core components are used for voltage and current conversion. When an IGBT experiences a shoot-through short circuit, due to the limitations of the module structure, the current flowing through the various sub-chips within the IGBT will inevitably not be completely evenly distributed. If the current unevenness is very severe, the short-circuit current will momentarily concentrate through a few IGBT sub-chips, causing excessively high current density in a single chip, which can trigger a static latch-up effect, ultimately leading to IGBT failure and system crash. Because this type of short-circuit failure occurs much less quickly than the short-circuit protection circuit of the driver, external intervention cannot be used to achieve short-circuit protection.

[0062] Based on this, in order to solve the technical problems in related technologies, the present invention provides a method, device, system and medium for optimizing the short-circuit reliability of power modules, which can avoid product failure caused by excessive local current density, shorten the development cycle and save development costs.

[0063] like Figure 1 As shown, Figure 1 A method for optimizing the short-circuit reliability of a power module, as provided in this embodiment of the invention, includes the following steps:

[0064] S100: Obtain the selected circuit topology, perform 3D modeling on the IGBT power module in the circuit topology, and obtain the 3D model.

[0065] S200, use the finite element simulation tool to perform finite element simulation of the short-circuit current uneven flow rate on the three-dimensional model, and obtain the uneven flow rate simulation results;

[0066] S300, based on the simulation results of uneven flow and the thermal capacity of each sub-chip, determines the temperature rise of the IGBT power module at the moment of short circuit;

[0067] S400, based on the uneven flow simulation results and temperature rise, determine whether the IGBT power module has a short-circuit failure risk. If it is determined that the IGBT power module has no short-circuit failure risk, determine that the three-dimensional model meets the structural design requirements.

[0068] This invention first uses 3D modeling software to create a 3D model of the IGBT power module. Then, using finite element simulation tools, it performs finite element modeling of the designed 3D model, conducting "finite element simulation of short-circuit current characteristics" and generating a current density contour plot. Finally, it models the thermal resistance and thermal capacity of the IGBT internal chip, calculating the maximum power the chip withstands and the resulting temperature rise during a short circuit using the "IGBT chip short-circuit power and temperature rise calculation" method. Through these three steps of simulation and calculation analysis, it determines whether the designed 3D power module model meets the current sharing requirements during a short circuit, thereby evaluating the rationality of the structural design and enabling physical prototyping based on the 3D model. This avoids the cyclical development process of design-prototyping-testing, redesign-reprototyping-retesting in conventional IGBT power module development. Not only can it prevent major problems from occurring in the design phase, but more importantly, it can shorten the development cycle and save development costs.

[0069] In some embodiments, obtaining the selected circuit topology and performing three-dimensional modeling of the IGBT power modules in the circuit topology to obtain a three-dimensional model includes:

[0070] S110, Obtain a template set containing multiple circuit topologies, and select a circuit topology from the template set that matches the project requirements;

[0071] S120: Select the model of the IGBT power module in the selected circuit topology and determine whether the IGBT power module needs to be designed in parallel.

[0072] S130, Select the model and calculate the parameters of the remaining components in the circuit topology;

[0073] S140 aims to maximize the consistency and symmetry of the positive and negative stacked busbar design, maximize the consistency of the length of the connecting copper busbar between the stacked busbar and the IGBT power terminal, maximize the width and thickness of the IGBT power terminal close to the busbar, and minimize the stray inductance of the IGBT power circuit. The IGBT power module is modeled in three dimensions using three-dimensional modeling software to obtain a three-dimensional model.

[0074] Specifically, based on the actual project from Figures 2 to 6 The process involves selecting a circuit topology, choosing the appropriate IGBT power module model, determining whether parallel design is required, and selecting and calculating the parameters of other auxiliary components. Next, 3D modeling software is used to create a 3D model of the IGBT power module. The design principles for this 3D model include: ensuring the positive and negative busbars are as consistent and symmetrical as possible; maintaining consistent lengths between the busbars and the connecting copper busbars at the IGBT power terminals; placing the IGBT power terminals as close to the busbars as possible, and designing them to be both wide and thick; and minimizing stray inductance in the IGBT power circuit.

[0075] In some embodiments, the step of using a finite element simulation tool to perform finite element simulation of the short-circuit current non-uniformity of the three-dimensional model to obtain the non-uniformity simulation results includes:

[0076] S210, The three-dimensional model is processed to suit finite element structural analysis to obtain the processed three-dimensional model.

[0077] S220 sets simulation material properties and conductivity properties for the IGBT power module, copper busbar, and insulating material in the processed 3D model;

[0078] S230 sets the boundary conditions and short-circuit current excitation source of the finite element simulation model, and performs simulation after analyzing and meshing the finite element simulation model to obtain the simulation results of uneven flow.

[0079] In some embodiments, after obtaining the non-uniform flow simulation results, the method further includes visualizing and data processing and analysis of the non-uniform flow simulation results to obtain a current density cloud map.

[0080] In some embodiments, the conductivity is set according to the following formula:

[0081] ;

[0082] In the formula: R is the conductivity, R is the resistance (in Ω); L is the length of the conductor (in m); A is the cross-sectional area of ​​the conductor (in m²). 2 ).

[0083] In some embodiments, the short-circuit current is set according to the following formula:

[0084] ;

[0085] In the formula: This is the short-circuit current. This is the maximum short-circuit current; The parameter that determines the current rise slope (di / dt); This is the midpoint of the current rise slope; The parameter that determines the slope of the current drop; This is the midpoint of the current drop slope; This is the short-circuit simulation time.

[0086] In this embodiment, by optimizing simulation parameters, the simulation accuracy is improved, ensuring that the results accurately reflect the actual current distribution and guiding design improvements.

[0087] In some embodiments, determining the temperature rise of the IGBT power module at the moment of short circuit based on the simulation results of uneven flow rate and the thermal capacity of each sub-chip includes:

[0088] S310: Obtain the number, material density, specific heat capacity, and volume parameters of the sub-chips in the IGBT power module, and calculate the heat capacity of each sub-chip based on the material density, specific heat capacity, and volume parameters;

[0089] S320 sets the short-circuit voltage, short-circuit current, short-circuit time, and initial ambient temperature for testing the IGBT power module. Based on the non-uniform current simulation results, short-circuit voltage, short-circuit current, and short-circuit time, the temperature rise of the IGBT power module is determined.

[0090] In this embodiment, by accurately calculating the temperature rise distribution, assessing the thermal stress of the sub-chip, optimizing the heat dissipation design, improving the reliability of the module, and ensuring stable operation under extreme conditions.

[0091] In some embodiments, the temperature rise of the IGBT power module is calculated using the following formula:

[0092] ;

[0093] In the formula: The temperature rise of the IGBT power module is given by n, where n is the number of sub-chips in the IGBT power module that experience uneven current flow, and t is the short-circuit time. For short-circuit power, , This is the short-circuit current. C is the short-circuit voltage; C is the thermal capacitance of a single sub-chip. c is the specific heat capacity of the sub-chip, m is the mass of the sub-chip, ρ is the material density of the sub-chip, and v is the volume of the sub-chip.

[0094] In this embodiment, the maximum power that the sub-chip can withstand at the moment of short circuit is calculated. The temperature rise generated by the IGBT power module was further analyzed. The impact of this temperature rise on the sub-chip performance was then adjusted to ensure high-efficiency output even under high-temperature conditions, thus extending the module's lifespan.

[0095] In some embodiments, determining whether the IGBT power module has a short-circuit failure risk based on the uneven flow simulation results and temperature rise includes:

[0096] If the current sharing of each sub-chip in the IGBT module is greater than the current sharing threshold, and the temperature rise generated by the IGBT power module at the moment of short circuit does not exceed the temperature threshold, then it is determined that the IGBT power module has no risk of short circuit failure.

[0097] Specifically, if the current sharing of each sub-chip in the IGBT module is greater than 30%, and the temperature rise of the IGBT power module at the moment of short circuit does not exceed 400℃, then the IGBT power module is determined to have no risk of short circuit failure.

[0098] In this embodiment, by setting flow rate and temperature thresholds and conducting multiple rounds of simulation verification under actual operating conditions, the accuracy and reliability of the evaluation results are ensured, ultimately achieving efficient and safe operation of the IGBT power module. This method effectively reduces the probability of module failure due to excessive temperature rise, improves the overall stability and lifespan of the system, and provides a solid guarantee for the efficient operation of power electronic equipment.

[0099] Figure 7 This is a schematic diagram for a short-circuit test of a two-level single-transistor IGBT. The test method is as follows: First, a long closed signal is sent to IGBT2, followed by a single pulse with a duration of 10μs to IGBT1, which then drives IGBT1 to turn off. Under normal circumstances, IGBT1 will turn off safely, and the test is complete.

[0100] Figure 8 This is a schematic diagram for a short-circuit test of two-level parallel IGBTs. The test method is as follows: First, a long-term closed signal is sent to IGBT2~IGBT2_n. Then, a single pulse with a duration of 10μs is sent to IGBT1~IGBT1_n, which drives IGBT1~IGBT1_n to turn off. Under normal circumstances, IGBT1~IGBT1_n will be safely turned off, and the test is complete.

[0101] Figure 9This diagram illustrates short-circuit failure modes; "Short-circuit failure mode A" corresponds to a short-circuit failure mode caused by severe current imbalance within the IGBT's internal sub-chips. The short-circuit failure time in this mode is generally less than 5µs, far less than the driver's short-circuit protection time. Therefore, the driver's short-circuit protection circuit cannot protect against "Short-circuit failure mode A".

[0102] Although low-power IGBTs have fewer internal parallel sub-chips, making internal current sharing less noticeable, they are often used in parallel configurations with multiple IGBTs connected in parallel, where current sharing becomes more pronounced. High-power devices, while generally not used in parallel, still exhibit significant internal current sharing issues due to their larger number of internal sub-chips.

[0103] Figure 10 The simulation analysis cloud map of the current density of a two-level IGBT module with substandard structural design reveals multiple points of concentrated current density, as well as disordered current vector direction and extremely poor current sharing within the IGBT.

[0104] Figure 11 The simulation analysis cloud diagram shows the current density of a two-level IGBT module with a qualified structural design. The current vector uniformity of the IGBT is relatively good, and the current density distribution flowing through the busbar is also relatively uniform, with no obvious concentration phenomenon.

[0105] Compared with related technologies, the present invention has the following beneficial effects:

[0106] This invention, through three iterative steps—"structural symmetry, equal impedance circuit and low inductance circuit design," "finite element short-circuit current characteristic simulation," and "IGBT chip short-circuit power and temperature rise calculation"—avoids severe current imbalance in IGBT chips under short-circuit conditions caused by design defects during the design phase. It offers the following advantages:

[0107] It provides correct guidance for the three-dimensional design of IGBT power modules;

[0108] It can reduce the number of sampling attempts, improve testing efficiency, and shorten the testing cycle;

[0109] It can save on design and development costs.

[0110] It allows for rapid product development and iteration.

[0111] refer to Figure 12 As shown, this embodiment of the invention also provides a short-circuit reliability optimization device for a power module, the device comprising:

[0112] The first module is used to establish a communication connection between the first network device 200 and the second network device 201 through the first connection module 202, and to perform real-time detection of the connection status between the first network device 200 and the second network device 201 through the detection system 100; wherein, the connection status includes data transmission speed, data transmission terminal address, and time difference between the first network device 200 and the second network device 201;

[0113] The second module is used to determine the network connection problem between the first network device 200 and the second network device 201 based on the connection status when the data transmission speed is detected to be lower than the speed threshold.

[0114] The third module is used to send network connection problems and corresponding alarm information, and switch to establish a communication connection between the first network device 200 and the second network device 201 through the second connection module 203;

[0115] The fourth module is used to fix the network connection problem between the first network device 200 and the second network device 201, and then switch to the first connection module 202 to connect the first network device 200 and the second network device 201 for communication.

[0116] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

[0117] This invention also provides a short-circuit reliability optimization system for a power module, including a memory, a processor, and a program stored in the memory and executable on the processor. When the program is executed by the processor, it implements the method described in the above embodiments.

[0118] Furthermore, one embodiment of the present invention provides a computer-readable storage medium storing computer-executable instructions for performing the above-described method.

[0119] It is worth noting that, since the computer-readable storage medium of the present invention is capable of executing the methods of any of the above embodiments, the specific implementation methods and technical effects of the computer-readable storage medium of the present invention can be referred to the specific implementation methods and technical effects of the methods of any of the above embodiments.

[0120] Furthermore, one embodiment of the present invention provides a computer program product, including a computer program or computer instructions, the computer program or computer instructions being stored in a computer-readable storage medium, a processor of a computer device reading the computer program or computer instructions from the computer-readable storage medium, and the processor executing the computer program or computer instructions to cause the computer device to perform the above-described method.

[0121] It is worth noting that, since the computer program product of the present invention can execute the methods of any of the above embodiments, the specific implementation methods and technical effects of the computer program product of the present invention can be referred to the specific implementation methods and technical effects of the methods of any of the above embodiments.

[0122] It will be understood by those skilled in the art that all or some of the steps and systems in the methods disclosed above can be implemented as software, firmware, hardware, and suitable combinations thereof. Some or all of the physical components can be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application-specific integrated circuit. Such software can be distributed on a computer-readable medium, which can include computer storage media (or non-transitory media) and communication media (or transient media). As is known to those skilled in the art, the term computer storage media includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules, or other data). Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disc (DVD) or other optical disc storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and is accessible to a computer. Furthermore, as is known to those skilled in the art, communication media typically include computer-readable instructions, data structures, program modules, or other data in modulated data signals such as carrier waves or other transmission mechanisms, and may include any information delivery medium.

[0123] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

Claims

1. A method for optimizing the short-circuit reliability of a power module, characterized in that... The selected circuit topology is obtained, and the IGBT power modules in the circuit topology are modeled in three dimensions to obtain a three-dimensional model. Finite element simulation tools were used to perform finite element simulation of the short-circuit current non-uniformity of the three-dimensional model, and the simulation results of the non-uniformity were obtained. The temperature rise of the IGBT power module at the moment of short circuit is determined based on the simulation results of uneven flow and the thermal capacity of each sub-chip. Based on the simulation results of uneven flow and temperature rise, it is determined whether the IGBT power module has a short-circuit failure risk. If it is determined that the IGBT power module has no short-circuit failure risk, it is determined that the three-dimensional model meets the structural design requirements. The process of acquiring the selected circuit topology and performing three-dimensional modeling on the IGBT power modules within the circuit topology to obtain a three-dimensional model includes: Obtain a template set containing multiple circuit topologies, and select the circuit topology that matches the project requirements from the template set; Select the appropriate IGBT power module model for the chosen circuit topology and determine whether parallel design of the IGBT power modules is required. Select the model and calculate the parameters of the remaining components in the circuit topology; With the goals of maximizing the consistency and symmetry of the positive and negative stacked busbar design, maximizing the consistency of the length of the connecting copper busbar between the stacked busbar and the IGBT power terminal, maximizing the width and thickness of the IGBT power terminal being close to the busbar, and minimizing the stray inductance of the IGBT power circuit, a three-dimensional model of the IGBT power module is obtained by using three-dimensional modeling software.

2. The method according to claim 1, characterized in that, The method of using finite element simulation tools to perform finite element simulation of the short-circuit current unevenness of the three-dimensional model, and obtaining the unevenness simulation results, includes: The 3D model is processed to suit finite element structural analysis, resulting in a processed 3D model. Set simulation material properties and conductivity properties for the IGBT power module, copper busbar, and insulating material in the processed 3D model; The boundary conditions and short-circuit current excitation source of the finite element simulation model are set, and the finite element simulation model is analyzed and meshed before simulation is performed to obtain the simulation results of non-uniform flow.

3. The method according to claim 2, characterized in that, The short-circuit current is set according to the following formula: ； In the formula: This is the short-circuit current. This is the maximum short-circuit current; This is a parameter that determines the current rise slope. This is the midpoint of the current rise slope; The parameter that determines the slope of the current drop; This is the midpoint of the current drop slope; This is the short-circuit simulation time.

4. The method according to claim 1, characterized in that, The determination of the temperature rise of the IGBT power module during a short circuit based on the simulation results of uneven flow and the thermal capacity of each sub-chip includes: Obtain the number, material density, specific heat capacity, and volume parameters of the sub-chips in the IGBT power module, and calculate the heat capacity of each sub-chip based on the material density, specific heat capacity, and volume parameters; Set the short-circuit voltage, short-circuit current, short-circuit time, and initial ambient temperature for testing the IGBT power module. Determine the temperature rise of the IGBT power module based on the non-uniform current simulation results, short-circuit voltage, short-circuit current, and short-circuit time.

5. The method according to claim 4, characterized in that, The temperature rise of the IGBT power module is calculated using the following formula: ； In the formula: The temperature rise of the IGBT power module is given by n, where n is the number of sub-chips in the IGBT power module that experience uneven current flow. t is the short-circuit time; For short-circuit power, , This is the short-circuit current. C is the short-circuit voltage; C is the thermal capacitance of a single sub-chip. c is the specific heat capacity of the sub-chip, m is the mass of the sub-chip, ρ is the material density of the sub-chip, and v is the volume of the sub-chip.

6. The method according to claim 1, characterized in that, The step of determining whether the IGBT power module has a short-circuit failure risk based on the uneven flow simulation results and temperature rise includes: If the current sharing of each sub-chip in the IGBT module is greater than the current sharing threshold, and the temperature rise generated by the IGBT power module at the moment of short circuit does not exceed the temperature threshold, then it is determined that the IGBT power module has no risk of short circuit failure.

7. A short-circuit reliability optimization device for a power module, characterized in that, The device includes: The first module is used to obtain the selected circuit topology, perform three-dimensional modeling of the IGBT power modules in the circuit topology, and obtain a three-dimensional model. The second module is used to perform finite element simulation of the short-circuit current uneven flow rate on the three-dimensional model using finite element simulation tools, and obtain the uneven flow rate simulation results. The third module is used to determine the temperature rise of the IGBT power module at the moment of short circuit based on the simulation results of uneven flow and the thermal capacity of each sub-chip. The fourth module is used to determine whether the IGBT power module has a short-circuit failure risk based on the uneven flow simulation results and temperature rise. If it is determined that the IGBT power module has no short-circuit failure risk, the three-dimensional model is determined to meet the structural design requirements. The process of acquiring the selected circuit topology and performing three-dimensional modeling on the IGBT power modules within the circuit topology to obtain a three-dimensional model includes: Obtain a template set containing multiple circuit topologies, and select the circuit topology that matches the project requirements from the template set; Select the appropriate IGBT power module model for the chosen circuit topology and determine whether parallel design of the IGBT power modules is required. Select the model and calculate the parameters of the remaining components in the circuit topology; With the goals of maximizing the consistency and symmetry of the positive and negative stacked busbar design, maximizing the consistency of the length of the connecting copper busbar between the stacked busbar and the IGBT power terminal, maximizing the width and thickness of the IGBT power terminal being close to the busbar, and minimizing the stray inductance of the IGBT power circuit, a three-dimensional model of the IGBT power module is obtained by using three-dimensional modeling software.

8. A short-circuit reliability optimization system for a power module, characterized in that, It includes a memory, a processor, and a program stored in the memory and executable on the processor, wherein the program, when executed by the processor, implements the method of any one of claims 1 to 6.

9. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the method of any one of claims 1 to 6.

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