Low noise amplifier

Abstract

The invention provides a low-noise amplifier which comprises an input stage module, a first amplification unit, a second amplification unit, a third amplification unit, a fourth amplification unit, a fifth transconductance adjustment module, a sixth transconductance adjustment module, a fifth transconductance adjustment module, a sixth transconductance adjustment module, a sixth transconductance adjustment module, a seventh transconductance adjustment module, a seventh transconductance adjustment module, a seventh transconductance adjustment module, a seventh transconductance adjustment module, a seventh transconductance adjustment module, a seventh transconductance adjustment module, a seventh transconductance adjustment module, a seventh transconductance adjustment module and an eighth transconductance adjustment module. The adjustable inductance negative feedback module is designed to be of a bypass series structure controlled by a switch, the gain gear of the low noise amplifier can be selected according to the actual signal strength and the requirement of the frequency band standard, and the gains of the first amplifier to the jth amplifier are further correspondingly adjusted through the first transconductance adjusting module to the (j-1) th transconductance adjusting module. Furthermore, the bandwidth is switched by utilizing the bandwidth adjustment feed-forward module, so that the gain adjustment of the low-noise amplifier under different frequency bands or different bandwidths can be realized while the stability of the low-noise amplifier is considered.

Description

Technical Field

[0001] This application relates to the field of integrated module technology, and more specifically to a low-noise amplifier. Background Technology

[0002] The rapid development of communication technology and market demands has driven the continuous evolution of radio frequency (RF) front-end receivers towards higher integration, higher performance, and lower power consumption. As the first-stage active circuit in the receiver loop, the low-noise amplifier (LNOA) needs to achieve high gain and low noise figure while being adjustable under different frequency bands and signal source power in order to meet the design requirements of different frequency bands and communication standards. Furthermore, the development of new wireless communication scenarios with demands for high speed, large capacity, wide coverage, and interference resistance has increased the need for adjustable bandwidth, making UWB (ultra-wideband) one of the current key areas for technological breakthroughs.

[0003] Existing low-noise amplifiers are mainly of the common-source, common-gate architecture. They are usually designed as narrowband amplifiers to achieve high gain. In order to meet the application requirements of current complex scenarios, it is necessary to provide a design method for low-noise amplifiers with adjustable bandwidth and gain. Summary of the Invention

[0004] This application provides a low-noise amplifier that solves the problem that the bandwidth and gain of existing low-noise amplifiers cannot be adjusted simultaneously.

[0005] This application provides a low-noise amplifier, including:

[0006] The input stage module is used to receive radio frequency input signals;

[0007] The cascaded first amplification unit, second amplification unit to j-th amplification unit are used to amplify the radio frequency input signal respectively, where j is an integer greater than or equal to 2;

[0008] The first transconductance adjustment module is used to adjust the gain of the first amplification unit, and so on. The (j-1)th transconductance adjustment module is used to adjust the gain of the (j-1)th amplification unit.

[0009] A bandwidth adjustment feedforward module is used to provide bias to the input stage module and to adjust the VSWR of the input stage module to perform bandwidth switching of the low-noise amplifier.

[0010] An adjustable inductor negative feedback module is used to adjust the stability and linearity of the cascaded first amplification unit, second amplification unit to j-th amplification unit under different signal strengths.

[0011] A Qualcomm stabilization module is used to improve the stability coefficient of the low-noise amplifier at out-of-band and low frequencies, and to adjust the gain of the low-noise amplifier at high frequencies.

[0012] The output stage module is used to summarize the amplified RF input signals to obtain the final RF output signal, and then output the RF output signal to the subsequent stage circuits.

[0013] Optionally, in the low-noise amplifier, the first amplification unit, the second amplification unit to the j-th amplification unit are all NMOS transistors, wherein the source of the first amplification unit is connected to the drain of the second amplification unit, the source of the second amplification unit is connected to the drain of the j-th amplification unit, the source of the j-th amplification unit is connected to the adjustable inductor negative feedback module, and the drain of the first amplification unit is connected to the output stage module.

[0014] Optionally, in the low-noise amplifier, any one of the transconductance adjustment modules from the first transconductance adjustment module to the (j-1)th transconductance adjustment module includes: a first resistor, a first capacitor, a first adjustable inductor, and a first switching unit, wherein,

[0015] One end of the first resistor is connected to an external first voltage, and the other end of the first resistor is connected to one end of the first capacitor and one end of the first adjustable inductor. The other end of the first capacitor is grounded, and the other end of the first adjustable inductor is connected to the gate of any one of the amplification units from the first amplification unit to the (j-1)th amplification unit. The first switching unit is connected in parallel with the first adjustable inductor.

[0016] Optionally, in the low-noise amplifier, the bandwidth adjustment feedforward module includes: a second switching unit, a second capacitor, and a second resistor. The first end of the second switching unit is connected to the drain of the first amplification unit, the second end of the second switching unit is connected to one end of the second capacitor, the other end of the second capacitor is connected to one end of the second resistor, and the other end of the second resistor is connected to the input stage module.

[0017] Optionally, in the low-noise amplifier, the input stage module includes: a third capacitor, a first inductor, a third resistor, and a first adjustable capacitor. One end of the third capacitor is connected to the radio frequency input signal, and the other end of the third capacitor is connected to one end of the first inductor. The other end of the first inductor is connected to the other end of the second resistor, one end of the third resistor, one end of the first adjustable capacitor, and the gate of the j-th amplification unit. The other end of the third resistor is connected to an external second voltage, and the other end of the first adjustable capacitor is connected to the source of the j-th amplification unit.

[0018] Optionally, in the low-noise amplifier, the adjustable inductor negative feedback module includes: at least one second inductor and at least one third switching unit, one of the third switching units being connected in parallel with one of the second inductors, the first second inductor being connected to the source of the j-th amplification unit, and the last second inductor being connected to ground, wherein when the number of second inductors is greater than one, the multiple second inductors are connected in series sequentially.

[0019] Optionally, in the low-noise amplifier, the high-pass stabilization module includes: a fourth capacitor, a fourth resistor, and a fourth switching unit. One end of the fourth capacitor is connected to an external third voltage, the other end of the fourth capacitor is connected to one end of the fourth resistor, the other end of the fourth resistor is connected to the first end of the fourth switching unit, and the second end of the fourth switching unit is connected to the output stage module.

[0020] Optionally, in the low-noise amplifier, the output stage module includes: a fifth resistor, a third inductor, and a second adjustable capacitor. One end of the fifth resistor is connected to an external third voltage, and the other end of the fifth resistor and the second end of the fourth switching unit are both connected to one end of the third inductor. The other end of the third inductor is connected to the drain of the first amplification unit and one end of the second adjustable capacitor, respectively. The other end of the second adjustable capacitor serves as the output terminal of the low-noise amplifier to output the radio frequency output signal to the subsequent circuit.

[0021] Optionally, in the low-noise amplifier, the first switching unit, the second switching unit, the third switching unit, and the fourth switching unit are all NMOS transistors or PMOS transistors.

[0022] Optionally, in the low-noise amplifier, corresponding gate-on voltages are provided to the gates of the first to fourth switching units to control the closing of the first to fourth switching units.

[0023] The technical solution of this application has at least the following advantages:

[0024] This application uses the common-source j-th amplification unit of the source inductor negative feedback structure (adjustable inductor negative feedback module) as the basis. The adjustable inductor negative feedback module is designed as a switch-controlled bypass series structure, which can select the gain level of the low-noise amplifier according to the actual signal strength and frequency band standard requirements. Furthermore, the first to j-1 transconductance adjustment modules are used to further adjust the gain of the first to j-th amplifiers, and the bandwidth adjustment feedforward module is used to switch the bandwidth. Thus, while taking into account the stability of the low-noise amplifier, the gain adjustment of the low-noise amplifier under different frequency bands or different bandwidths can be achieved. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of the circuit structure of a low-noise amplifier according to an embodiment of the present invention;

[0027] Figure 2 This is a circuit diagram of the second transconductance adjustment module according to an embodiment of the present invention;

[0028] Figure 3 This is a simplified circuit diagram of the second transconductance adjustment module according to an embodiment of the present invention;

[0029] The reference numerals in the attached figures are explained as follows:

[0030] 11-Input stage module, 21-First transconductance adjustment module, 22-Second transconductance adjustment module, 12-Bandwidth adjustment feedforward module, 13-Adjustable inductor negative feedback module, 14-High-pass stabilization module, 15-Output stage module. Detailed Implementation

[0031] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0032] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0033] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal connection of two components; and they can refer to a wireless connection or a wired connection. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0034] Furthermore, the technical features involved in the different embodiments of this application described below can be combined with each other as long as they do not conflict with each other.

[0035] This application provides a low-noise amplifier, referenced in the embodiments. Figure 1 , Figure 1 This is a schematic diagram of the circuit structure of a low-noise amplifier according to an embodiment of the present invention. The low-noise amplifier includes:

[0036] Input stage module 11 is used to receive radio frequency input signal RFin;

[0037] The cascaded first amplification unit, second amplification unit to j-th amplification unit are used to amplify the radio frequency input signal respectively, where j is an integer greater than or equal to 2;

[0038] The first transconductance adjustment module 21 to the (j-1)th transconductance adjustment module are used to adjust the gain of the first amplification unit, and so on. The (j-1)th transconductance adjustment module is used to adjust the gain of the (j-1)th amplification unit.

[0039] The bandwidth adjustment feedforward module 12 is used to provide bias to the input stage module 11 and to adjust the VSWR of the input stage module 11 to perform bandwidth switching of the low noise amplifier.

[0040] The adjustable inductor negative feedback module 13 is used to adjust the stability and linearity of the cascaded first amplification unit, second amplification unit to j-th amplification unit under different signal strengths.

[0041] Qualcomm stabilization module 14 is used to improve the stability coefficient of the low-noise amplifier at out-of-band and low-frequency frequencies, and to adjust the gain of the low-noise amplifier at high frequencies;

[0042] The output stage module 15 is used to summarize the amplified RF input signal to obtain the final RF output signal, and output the RF output signal to the subsequent stage circuit.

[0043] Preferably, the first amplification unit, the second amplification unit to the j-th amplification unit are MOSFETs, BJTs or HBTs.

[0044] In this embodiment, taking j=3 as an example, the low-noise amplifier provided in this application is specifically described. (Reference) Figure 1 The low-noise amplifier includes:

[0045] Input stage module 11 is used to receive radio frequency input signal RFin;

[0046] The cascaded first amplification unit M1, second amplification unit M2, and third amplification unit M2 are used to amplify the radio frequency input signal respectively;

[0047] A first transconductance adjustment module 21 and a second transconductance adjustment module 22 are used to adjust the gain of the first amplification unit and the second transconductance adjustment module 22 is used to adjust the gain of the second amplification unit.

[0048] The bandwidth adjustment feedforward module 12 is used to provide bias to the input stage module 11 and to adjust the VSWR of the input stage module 11 to perform bandwidth switching of the low noise amplifier.

[0049] The adjustable inductor negative feedback module 13 is used to adjust the stability and linearity of the cascaded first amplification unit, second amplification unit and third amplification unit under different signal strengths;

[0050] Qualcomm stabilization module 14 is used to improve the stability coefficient of the low-noise amplifier at out-of-band and low-frequency frequencies, and to adjust the gain of the low-noise amplifier at high frequencies;

[0051] The output stage module 15 is used to summarize the amplified RF input signal to obtain the final RF output signal, and output the RF output signal to the subsequent stage circuit.

[0052] In this embodiment, the first amplification unit M1, the second amplification unit M2, and the third amplification unit M3 are all NMOS transistors. The source of the first amplification unit M1 is connected to the drain of the second amplification unit M2, the source of the second amplification unit M2 is connected to the drain of the third amplification unit M3, the source of the third amplification unit is connected to the adjustable inductor negative feedback module 13, and the drain of the first amplification unit M1 is connected to the output stage module 11.

[0053] Furthermore, both the first transconductance adjustment module 21 and the second transconductance adjustment module 22 include: a first resistor Rb1 / Rb2 and a first capacitor C. bp1 / C bp2 First adjustable inductor L fb_1 / Lfb_2 First switching unit SW 4_1 / SW 4_2 .

[0054] Specifically, in the first transconductance adjustment module 21, one end of the first resistor Rb2 is connected to the external first voltage Vg3, and the other end of the first resistor Rb2 is connected to the first capacitor C. bp2 One end and the first adjustable inductor L fb_2 One end, the first capacitor C bp2 The other end is grounded, and the first adjustable inductor L fb_2 The other end is connected to the gate of the first amplification unit M1, and the first switching unit SW 4_2 With the first adjustable inductor L fb_2 in parallel.

[0055] Furthermore, in the second transconductance adjustment module 22, one end of the first resistor Rb1 is connected to an external first voltage Vg2, and the other end of the first resistor Rb1 is connected to the first capacitor C. bp1 One end and the first adjustable inductor L fb_1 One end, the first capacitor C bp1 The other end is grounded, and the first adjustable inductor L fb_1 The other end is connected to the gate of the second amplification unit M2, and the first switching unit SW 4_1 With the first adjustable inductor L fb_1 in parallel.

[0056] Preferably, the first switching unit SW 4_1 / SW 4_2 It can be an NMOS or PMOS transistor.

[0057] In this embodiment, the first switching unit SW 4_1 / SW 4_2 It is an NMOS transistor, which is supplied to the first switching unit SW. 4_1 / SW 4_2 The gate provides a corresponding gate turn-on voltage to control the first switching unit SW. 4_1 / SW 4_2 The closure.

[0058] In this application, the transconductance adjustment module is configured as j modules cascaded together to achieve step-by-step adjustment of the transconductance. By closing and opening the first switching unit in each transconductance adjustment module, the first adjustable inductor in each module is controlled to control whether it is connected to the gate of the corresponding amplification unit, and the value of the first adjustable inductor in each module is controlled, thereby achieving fine adjustment of the gain of the overall low-noise amplifier circuit.

[0059] Taking the second transconductance adjustment module 22 as a specific example, refer to Figure 2 , Figure 2 This is a circuit diagram of the second transconductance adjustment module according to an embodiment of the present invention. The external first voltage Vg2 is used to provide the DC bias voltage for the common-gate second amplification unit M2, and the first capacitor C... bp1 The first adjustable inductor L acts as a bypass capacitor, a small-signal ground, and filters noise signals. fb_1 As a transconductance amplification and adjustment element, the transconductance of the second amplification unit M2 can be adjusted, wherein the first switching unit SW 4_1 The closing and opening of the circuit is used to control the first adjustable inductor L. fb_1 Whether to connect to the gate of the second amplification unit M2.

[0060] refer to Figure 3 , Figure 3 This is a simplified circuit diagram of the second transconductance adjustment module according to an embodiment of the present invention. The second transconductance adjustment module is simplified and analyzed. If the first switching unit SW... 4_1 When closed, the first adjustable inductor L fb_1 When short-circuited, the gate-source transconductance of the common-gate second amplification unit M2 is gm1; if the first switching unit SW 4_1 When disconnected, the external first voltage Vg2 passes through the first adjustable inductor L. fb_1 When connected in series with the gate capacitance Cgs, the voltage level Vgs from the gate to the source b of the second amplification unit M2 will change as follows:

[0061]

[0062] Among them, C gs For gate-source capacitance, f r f0 is the resonant frequency, f0 is the actual operating frequency, and V is the resonant frequency. s Source potential (e.g.) Figure 2 ), L fb Let ω be the inductance of the gate series inductor, j be an imaginary number, and ω be the angular frequency, where ω = 2πf0.

[0063] The formula for calculating the LC resonant frequency fr is given in Formula 2.

[0064]

[0065] When the operating frequency f is lower than the LC resonant frequency fr, the voltage swing of the gate-to-source level Vgs can be amplified by 1 / (1-(f0 / f)). r )^2) times; as the gate-to-source level Vgs increases, its effective gate-source transconductance gm2 increases accordingly, thereby improving the gain of the low-noise amplifier, and the first adjustable inductor L fb-1As the sensing value increases, within the range where the operating frequency f is less than the LC resonance frequency fr, the level Vgs from the gate to the source of the amplification unit will increase accordingly, achieving an increase in the gate-source transconductance. That is, in the present application, the first adjustable inductor L fb-1 realizes a variable inductor architecture, thereby achieving fine regulation of transconductance and gain.

[0066] Preferably, the bandwidth adjustment feedforward module 12 includes: a second switch unit SW3, a second capacitor C fb and a second resistor R fb . The first end of the second switch unit unit SW unit SW3 is connected to the drain of the first amplification unit M1, the second end of the second switch unit SW3 is connected to one end of the second capacitor C fb , the other end of the second capacitor C fb is connected to one end of the second resistor R fb , and the other end of the second resistor R fb is connected to the input stage module 11.

[0067] Among them, the second switch unit SW3 is an NMOS transistor or a PMOS transistor.

[0068] In this embodiment, the second switch unit SW3 is an NMOS transistor. By providing a corresponding gate opening voltage to the gate of the second switch unit SW3, it is used to control the closing of the second switch unit SW3.

[0069] In the present application, the bandwidth adjustment feedforward module 12 is controlled by the second switch unit SW3 whether to be connected. When the second switch unit SW3 is closed, the bandwidth adjustment feedforward module 12 is connected to the circuit, which can reduce the standing wave ratio of the input stage and achieve broadband matching within a certain range; when the second switch unit SW3 is disconnected, the standing wave ratio will increase relatively and the bandwidth will become narrower.

[0070] When the second switch unit SW3 is closed, the circuit of the bandwidth adjustment feedforward module 12 is turned on. From small-signal analysis, the existence of the path of the bandwidth adjustment feedforward module 12 makes the gain be regulated by the ratio of the second resistor R fb and the input impedance, and at the same time, it can improve the return loss of the input stage, so that matching within a larger bandwidth can be achieved. Correspondingly, if the second switch unit SW3 is disconnected, there is no feedforward path for the effective bandwidth adjustment feedforward module 12, and the existence of the second resistor R fb can block the DC (direct current signal) and low-frequency noise that the external second voltage Vg1 may transmit.

[0071] Furthermore, the input stage module 11 includes: a third capacitor C in , a first inductor L g , a third resistor RB3, and a first adjustable capacitor Cex. The third capacitor Cin One end of the capacitor is connected to the radio frequency input signal RFin, and the third capacitor C in The other end is connected to the first inductor L g One end, the first inductor L g The other end is connected to the second resistor R in the bandwidth adjustment feedforward module 12. fb The other end of the third resistor RB3, one end of the first adjustable capacitor Cex, and the gate of the third amplification unit M3 are connected to the third resistor RB3. The other end of the third resistor RB3 is connected to the external second voltage Vg1, and the other end of the first adjustable capacitor Cex is connected to the source of the third amplification unit M3.

[0072] Preferably, the adjustable inductor negative feedback module 13 includes: at least one second inductor and at least one third switching unit, wherein one third switching unit is connected in parallel with one second inductor, the first second inductor is connected to the source of the j-th amplification unit, and the last second inductor is connected to ground, wherein when the number of second inductors is greater than one, the multiple second inductors are connected in series sequentially.

[0073] In this embodiment, the adjustable inductor negative feedback module 13 includes: two second inductors Ls1 and Ls2 connected in series and two third switching units SW1 and SW2. SW1 is connected in parallel with Ls1, and SW2 is connected in parallel with Ls2. Ls1 is connected to the source of the third amplification unit M3, and Ls2 is connected to ground.

[0074] In this application, all the third switch units SW1 / SW2 are used to control whether the corresponding second inductor Ls1 is connected to the branch where the first, second to third (j) amplifier units are located. After the impedance seen by the actual source of the third amplifier unit (j-th amplifier unit) is matched by conjugate matching and noise matching, the total inductance value Ls = Ls1 + Ls2 + ... is larger. The larger the total gain of the low noise amplifier is, the lower the total gain of the low noise amplifier. Based on this, the gain step size of the noise amplifier can be adjusted by closing or opening each third switch unit.

[0075] Preferably, all of the third switching units SW1 / SW2 are NMOS transistors or PMOS transistors.

[0076] In this embodiment, all the third switching units SW1 / SW2 are NMOS transistors. By providing a corresponding gate turn-on voltage to the gate of the third switching units SW1 / SW2, the closing of the third switching units SW1 / SW2 is controlled.

[0077] Furthermore, the Qualcomm stabilization module 14 includes: a fourth capacitor Cd, a fourth resistor Rd, and a fourth switching unit SW5. One end of the fourth capacitor Cd is connected to an external third voltage Vdd, and the other end of the fourth capacitor Cd is connected to one end of the fourth resistor Rd. The other end of the fourth resistor Rd is connected to the first end of the fourth switching unit SW5, and the second end of the fourth switching unit SW5 is connected to the output stage module 15.

[0078] When operating in high-gain mode, in addition to considering in-band stability, it is also important to consider whether out-band oscillations will occur. To avoid low-frequency oscillations, this application provides a high-pass stabilization module 14. When in high-gain mode, the fourth switch unit SW5 needs to be closed, and the fourth resistor Rd and the fourth capacitor Cd are connected to the drain of the first amplification unit. The resistance value of the fourth resistor Rd is lower than that of the fifth resistor R. L The resistance value is such that at low frequencies, a relatively small impedance is observed compared to the fifth resistor R. L Parallel connection ensures that the amplification stability K is greater than 1; at high frequencies, the fourth switching unit SW5 needs to be disconnected to avoid reducing the amplifier gain.

[0079] Preferably, the fourth switching unit SW5 is an NMOS transistor or a PMOS transistor.

[0080] In this embodiment, the fourth switching unit SW5 is an NMOS transistor. By providing a corresponding gate turn-on voltage to the gate of the fourth switching unit SW5, the closing of the fourth switching unit SW5 can be controlled.

[0081] Preferably, the output stage module 15 includes: a fifth resistor R L The third inductor Ld and the second adjustable capacitor Cd, the fifth resistor R L One end of the resistor is connected to an external third voltage Vdd, and the fifth resistor R L The other end of the third inductor Ld and the second end of the fourth switching unit SW5 in the Qualcomm stabilization module 14 are both connected to one end of the third inductor Ld. The other end of the third inductor Ld is connected to the drain of the first amplification unit M1 and one end of the second adjustable capacitor Cd, respectively. The other end of the second adjustable capacitor Cd serves as the output terminal of the low noise amplifier to output the radio frequency output signal RFout to the subsequent circuit.

[0082] based on Figure 1 The low-noise amplifier shown here has its actual operating mode determined by the switching unit control selection during actual use, as detailed in Table 1 below:

[0083] Table 1

[0084]

[0085] In this context, the closing of each switch unit is represented by OFF, and the opening of each switch unit is represented by ON.

[0086] In this application, the common-source j-th amplification unit of the source inductor negative feedback structure (adjustable inductor negative feedback module) is used as the basis. The adjustable inductor negative feedback module is designed as a switch-controlled bypass series structure (at least one second inductor is connected in series in the circuit branch). The gain level of the low-noise amplifier can be selected according to the actual signal strength and frequency band standard requirements. Furthermore, the gain of the first to j-1 transconductance adjustment modules are used to further adjust the gain of the first to j-th amplifiers. The bandwidth adjustment feedforward module is used to switch the bandwidth. Thus, while taking into account the stability of the low-noise amplifier, the gain adjustment of the low-noise amplifier under different frequency bands or different bandwidths can be achieved.

[0087] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this application.

Claims

1. A low noise amplifier, characterized by, include: The input stage module is used to receive radio frequency input signals; The cascaded first amplification unit, second amplification unit to j-th amplification unit are used to amplify the radio frequency input signal respectively, where j is an integer greater than or equal to 2; The first transconductance adjustment module is used to adjust the gain of the first amplification unit, and so on. The (j-1)th transconductance adjustment module is used to adjust the gain of the (j-1)th amplification unit. A bandwidth adjustment feedforward module is used to provide bias to the input stage module and to adjust the VSWR of the input stage module to perform bandwidth switching of the low-noise amplifier. An adjustable inductor negative feedback module is used to adjust the stability and linearity of the cascaded first amplification unit, second amplification unit to j-th amplification unit under different signal strengths. A Qualcomm stabilization module is used to improve the stability coefficient of the low-noise amplifier at out-of-band and low frequencies, and to adjust the gain of the low-noise amplifier at high frequencies. The output stage module is used to summarize the amplified RF input signals to obtain the final RF output signal, and then output the RF output signal to the subsequent stage circuits.

2. The low noise amplifier of claim 1, wherein, The first amplification unit, the second amplification unit, and the j-th amplification unit are all NMOS transistors. The source of the first amplification unit is connected to the drain of the second amplification unit, the source of the second amplification unit is connected to the drain of the j-th amplification unit, the source of the j-th amplification unit is connected to the adjustable inductor negative feedback module, and the drain of the first amplification unit is connected to the output stage module.

3. The low noise amplifier of claim 2, wherein, Each of the first to the (j-1)th transconductance adjustment modules includes: a first resistor, a first capacitor, a first adjustable inductor, and a first switching unit, wherein... One end of the first resistor is connected to an external first voltage, and the other end of the first resistor is connected to one end of the first capacitor and one end of the first adjustable inductor. The other end of the first capacitor is grounded, and the other end of the first adjustable inductor is connected to the gate of any one of the amplification units from the first amplification unit to the (j-1)th amplification unit. The first switching unit is connected in parallel with the first adjustable inductor.

4. The low noise amplifier of claim 3, wherein, The bandwidth adjustment feedforward module includes: a second switching unit, a second capacitor, and a second resistor. The first end of the second switching unit is connected to the drain of the first amplification unit, the second end of the second switching unit is connected to one end of the second capacitor, the other end of the second capacitor is connected to one end of the second resistor, and the other end of the second resistor is connected to the input stage module.

5. The low noise amplifier of claim 4, wherein, The input stage module includes: a third capacitor, a first inductor, a third resistor, and a first adjustable capacitor. One end of the third capacitor is connected to the radio frequency input signal, and the other end of the third capacitor is connected to one end of the first inductor. The other end of the first inductor is connected to the other end of the second resistor, one end of the third resistor, one end of the first adjustable capacitor, and the gate of the j-th amplification unit. The other end of the third resistor is connected to an external second voltage, and the other end of the first adjustable capacitor is connected to the source of the j-th amplification unit.

6. The low noise amplifier of claim 5, wherein, The adjustable inductance negative feedback module comprises at least one second inductor and at least one third switch unit, one third switch unit corresponding to one second inductor in parallel, the first second inductor connecting the source of the jth amplification unit, and the last second inductor connecting the ground, wherein when the number of second inductors is greater than one, the plurality of second inductors are connected in series.

7. The low noise amplifier of claim 6, wherein, The high-pass stabilization module comprises a fourth capacitor, a fourth resistor and a fourth switch unit, one end of the fourth capacitor being connected to an external third voltage, the other end of the fourth capacitor being connected to one end of the fourth resistor, the other end of the fourth resistor being connected to a first end of the fourth switch unit, and a second end of the fourth switch unit being connected to the output stage module.

8. The low noise amplifier of claim 7, wherein, The output stage module comprises a fifth resistor, a third inductor and a second adjustable capacitor, one end of the fifth resistor being connected to an external third voltage, one end of the third inductor being connected to the second end of the fourth switch unit and the other end of the fifth resistor, the other end of the third inductor being connected to the drain of the first amplification unit and one end of the second adjustable capacitor respectively, and the other end of the second adjustable capacitor being used as an output end of the low-noise amplifier to output the radio frequency output signal to a subsequent circuit.

9. The low noise amplifier of claim 8, wherein, The first switch unit, the second switch unit, the third switch unit and the fourth switch unit are NMOS tubes or PMOS tubes.

10. The low noise amplifier of claim 9, wherein, By providing corresponding gate opening voltages to the gates of the first switch unit to the fourth switch unit, the closing of the first switch unit to the fourth switch unit is controlled.

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