FLASH data storage initial address searching method
By employing a two-stage lookup strategy and a sector pre-erasure mechanism, the problem of low lookup efficiency in traditional FLASH memory is solved, enabling fast and accurate address positioning and improving the storage performance and stability of avionics equipment.
Patent Information
- Application Number
- CN202511416610.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-30
- Publication Date
- 2025-12-26
AI Technical Summary
Traditional FLASH memory is inefficient when looking up the starting address, especially in scenarios with large storage capacity or frequent writes, which affects the system response speed and overall efficiency, making it difficult to meet the high real-time requirements of modern avionics systems.
A two-stage search strategy is adopted: the first stage quickly locates the target sector through polling, and the second stage uses binary search within the sector to accurately locate the address. Combined with the sector pre-erasure mechanism and setting a minimum search unit, a balance between search accuracy and efficiency is ensured.
It significantly improves address lookup speed and system response capability, ensuring high efficiency and reliability of FLASH storage operations in avionics equipment, and adapting to the needs of different application scenarios.