Bridge floor water vapor diffusion analysis method and related device

Abstract

The invention relates to a bridge floor water vapor diffusion analysis method and a related device, and belongs to the technical field of bridge engineering.The bridge floor water vapor diffusion analysis method comprises the steps that a bridge floor two-dimensional finite element model is constructed based on a bridge floor structure, and the bridge floor two-dimensional finite element model comprises water vapor diffusion coefficients of all layers of structures of a bridge floor; determining the altitude and the temperature of the position of the bridge floor, and correcting the water vapor diffusion coefficient of each layer structure of the bridge floor based on the altitude and the temperature to obtain a corrected water vapor diffusion coefficient; and carrying out accumulation type water vapor motion simulation and penetration type water vapor motion simulation on water vapor diffusion of the bridge floor by adopting the corrected water vapor diffusion coefficient based on the bridge floor two-dimensional finite element model to obtain a water vapor diffusion analysis result of the bridge floor. The method can accurately analyze the water vapor diffusion movement of the bridge floor.

Description

Technical Field

[0001] This invention relates to the field of bridge engineering technology, and in particular to a method and related apparatus for analyzing water vapor diffusion on bridge decks. Background Technology

[0002] As a key component of bridge structure, the bridge deck pavement system is exposed to complex environmental loads for extended periods, and its waterproofing bonding layer directly affects the durability and service life of the bridge structure. Extensive engineering practice has shown that water erosion is the dominant factor inducing early-stage defects in bridge deck pavement layers (such as shoving, delamination, and cracking) and failure of the waterproofing bonding layer. Moisture exists within the bridge deck in two forms: liquid infiltration water (rainfall, de-icing salt solution) and gaseous diffusion water (atmospheric humidity, condensation). The phenomenon of gaseous water molecules penetrating the material through diffusion is particularly insidious and widespread. Water vapor diffusion can lead to irreversible damage such as asphalt-aggregate interface delamination and degradation of binder performance.

[0003] Current research on water vapor movement on bridge decks faces multi-dimensional technical bottlenecks. In terms of environmental coupling, the coupling effect of multiple physical field factors such as dynamic fluctuations in temperature and humidity and changes in altitude and air pressure on water vapor diffusion is severely simplified. Existing studies mostly use single-factor analysis (such as constant humidity boundary and empirical temperature correction formula), which leads to significant deviations between theoretical predictions and actual service conditions. The time-varying nature and spatial complexity of water vapor movement within the mixture make it difficult for traditional experimental methods to capture long-term diffusion processes in real time, and it is even more impossible to establish a universal mapping relationship between environmental parameters and diffusion coefficients. This directly results in a vague understanding of key parameters such as the water vapor diffusion inhibition efficiency of the waterproof adhesive layer and the material-dominant mechanism.

[0004] Therefore, existing technologies cannot determine the relationship between water vapor diffusion on bridge decks and multiple coupling factors, resulting in inaccurate analysis of water vapor diffusion on bridge decks. Summary of the Invention

[0005] In view of this, it is necessary to provide a method and related apparatus for analyzing water vapor diffusion on bridge decks, so as to solve the problem that the existing technology cannot determine the correlation between water vapor diffusion on bridge decks and multiple coupling factors, resulting in inaccurate analysis of water vapor diffusion on bridge decks.

[0006] To address the aforementioned problems, in a first aspect, the present invention provides a method for analyzing water vapor diffusion on bridge decks, comprising: A two-dimensional finite element model of the bridge deck is constructed based on the bridge deck structure. The two-dimensional finite element model of the bridge deck includes the water vapor diffusion coefficient of each layer of the bridge deck structure. Determine the altitude and temperature of the bridge deck location, and correct the water vapor diffusion coefficient of each layer of the bridge deck structure based on the altitude and temperature to obtain the corrected water vapor diffusion coefficient. Using a modified water vapor diffusion coefficient, a two-dimensional finite element model of the bridge deck was used to simulate the accumulation and penetration of water vapor on the bridge deck, and the analysis results of water vapor diffusion on the bridge deck were obtained.

[0007] In one possible implementation, a two-dimensional finite element model of the bridge deck is constructed based on the bridge deck structure, including: A two-dimensional finite element model of the bridge deck, including a leveling layer, a waterproof bonding layer, a protective layer, and a wear-resistant layer, was constructed based on the bridge deck structure, and the material parameters and corresponding initial water vapor diffusion coefficients of each layer were configured.

[0008] In one possible implementation, determining the altitude and temperature of the location of the bridge deck includes: Determine the average elevation of the location of the bridge deck; Historical temperature curves of each layer of the bridge deck structure are obtained within a historical time period, and predicted temperature curves of each layer of the bridge deck structure within a future time period are fitted based on the historical temperature curves of each layer of the bridge deck structure.

[0009] In one possible implementation, the water vapor diffusion coefficient of each layer of the bridge deck structure is corrected based on altitude and temperature to obtain a corrected water vapor diffusion coefficient, including: The pressure at the location of the bridge deck is determined based on the altitude, and the first corrected water vapor diffusion coefficient of each layer of the bridge deck structure under the pressure is calculated based on the preset pressure correction formula. The second corrected water vapor diffusion coefficient of each layer of the bridge deck structure is calculated based on the preset temperature correction formula and the predicted temperature curve. The corrected water vapor diffusion coefficients for each layer of the bridge deck structure are determined based on the first and second corrected water vapor diffusion coefficients.

[0010] In one possible implementation, a modified water vapor diffusion coefficient is used to simulate the accumulation-type and penetration-type water vapor movement of the bridge deck based on a two-dimensional finite element model of the bridge deck, including: Set the initial conditions and boundary conditions for the two-dimensional finite element model of the bridge deck. The initial conditions include the initial water vapor concentration of each layer of the two-dimensional finite element model of the bridge deck and the corrected water vapor diffusion coefficient of each layer. The boundary conditions include the maximum water vapor concentration in the two-dimensional finite element model of the bridge deck. A two-dimensional finite element model of the bridge deck was used to simulate the water vapor diffusion of the bridge deck with the first time span as the step size, and the first relationship curve between the water vapor concentration of the bridge deck and time was obtained. A two-dimensional finite element model of the bridge deck was used to simulate the water vapor diffusion of the bridge deck with a second time span as the step size. The second relationship curve between the water vapor concentration on the bridge deck and time was obtained, in which the first time span is smaller than the second time span.

[0011] In one possible implementation, the formula for calculating the water vapor concentration is:

[0012] in, C For water vapor concentration, The molar mass of water, R The gas constant is T Thermodynamic temperature It is the saturated vapor pressure. RH This refers to relative humidity.

[0013] In one possible implementation, the results of water vapor diffusion analysis on the bridge deck are obtained, including: Based on the first and second relationship curves, the time required for the fluctuation rate of water vapor concentration on the bridge deck to be less than the preset fluctuation rate is determined.

[0014] Secondly, the present invention also provides a bridge deck water vapor diffusion analysis device, comprising: The model building module is used to build a two-dimensional finite element model of the bridge deck based on the bridge deck structure. The two-dimensional finite element model of the bridge deck includes the water vapor diffusion coefficient of each layer of the bridge deck structure. The diffusion coefficient correction module is used to determine the altitude and temperature of the bridge deck location, and correct the water vapor diffusion coefficient of each layer of the bridge deck structure based on the altitude and temperature to obtain the corrected water vapor diffusion coefficient. The water vapor diffusion analysis module is used to simulate the accumulation-type and penetration-type water vapor motion of the bridge deck based on a two-dimensional finite element model with a modified water vapor diffusion coefficient, and to obtain the water vapor diffusion analysis results of the bridge deck.

[0015] Thirdly, the present invention also provides an electronic device, including a memory and a processor, wherein, Memory, used to store programs; The processor, coupled to the memory, is used to execute the program stored in the memory to implement the steps in the bridge deck water vapor diffusion analysis method of any of the above embodiments.

[0016] Fourthly, the present invention also provides a computer-readable storage medium for storing a computer-readable program or instruction, which, when executed by a processor, can implement the steps in the bridge deck water vapor diffusion analysis method of any of the above embodiments.

[0017] The beneficial effects of this invention are as follows: The bridge deck water vapor diffusion analysis method provided by this invention constructs a two-dimensional finite element analysis model of the bridge deck based on its structure and sets the water vapor diffusion coefficient of each layer of the bridge deck structure, taking into account the influence of the bridge deck structure on water vapor diffusion and improving the accuracy of water vapor diffusion analysis; by determining the altitude and temperature of the bridge deck location, the water vapor diffusion coefficient of each layer of the bridge deck structure is corrected, taking into account the influence of pressure and temperature on bridge deck water vapor diffusion; by simulating accumulation-type water vapor movement and penetration-type water vapor movement of the bridge deck, the influence of different water vapor movement types on bridge deck water vapor diffusion is considered. This invention comprehensively considers the influence of multiple factors on bridge deck water vapor diffusion, making the analysis of bridge deck water vapor diffusion more accurate and beneficial to bridge deck design. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 A schematic flowchart of a bridge deck water vapor diffusion analysis method provided in an embodiment of the present invention; Figure 2 A schematic diagram of a two-dimensional finite element model of a bridge deck provided in an embodiment of the present invention; Figure 3 A flowchart illustrating a method for determining altitude and temperature according to an embodiment of the present invention; Figure 4 This is a schematic diagram of temperature sampling for each layer of a bridge deck structure provided in an embodiment of the present invention; Figure 5 This invention provides an embodiment of temperature variation in the various layers of a bridge deck structure. Figure 6 A schematic flowchart of a water vapor diffusion coefficient correction method provided in an embodiment of the present invention; Figure 7 A water vapor diffusion coefficient diagram provided in an embodiment of the present invention; Figure 8 A schematic flowchart of a water vapor diffusion simulation method provided in an embodiment of the present invention; Figure 9 A graph showing the relationship between water vapor concentration and diffusion time at various points inside a waterproof adhesive layer, provided in an embodiment of the present invention; Figure 10 A graph showing the relationship between water vapor concentration inside a waterproof adhesive layer and time, provided as an embodiment of the present invention; Figure 11A graph showing the relationship between water vapor concentration data and water vapor diffusion time is provided as an embodiment of the present invention. Figure 12 A graph showing the change rate of water vapor concentration in a waterproof adhesive layer at different time points is provided as an embodiment of the present invention. Figure 13 This is a schematic diagram of a bridge deck water vapor diffusion analysis device provided in an embodiment of the present invention; Figure 14 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0020] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form part of this application and are used together with the embodiments of the present invention to illustrate the principles of the present invention, but are not intended to limit the scope of the present invention.

[0021] The terms "first," "second," etc., used in the embodiments of this invention are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a technical feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature.

[0022] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0023] A specific embodiment of the present invention, such as Figure 1 As shown, a method for analyzing water vapor diffusion on bridge decks is disclosed, including: S101, a two-dimensional finite element model of the bridge deck is constructed based on the bridge deck structure. The two-dimensional finite element model of the bridge deck includes the water vapor diffusion coefficient of each layer of the bridge deck structure.

[0024] In this embodiment of the invention, different bridge decks have different structures according to the design of the bridge deck, including the number of layers of the bridge deck structure, the thickness of various structures, materials, etc. The water vapor diffusion movement of bridge decks with different structures is different. In particular, the water vapor diffusion movement of bridge decks with waterproof adhesive layers is significantly different from that of bridge decks without waterproof adhesive layers. Therefore, when constructing the bridge deck model, it is necessary to construct a two-dimensional finite element model of the bridge deck according to the specific structure of the bridge deck.

[0025] In this embodiment of the invention, the two-dimensional finite element model of the bridge deck can be constructed using existing simulation software, such as COMSOL simulation software. This two-dimensional finite element model of the bridge deck can analyze multiphysics fields, thereby simulating the diffusion of water vapor on the bridge deck. Furthermore, when constructing the two-dimensional finite element model of the bridge deck, it is necessary to configure corresponding parameters for each layer of the bridge deck structure. Among these, the most important is the water vapor diffusion coefficient of each layer, because different materials correspond to different water vapor diffusion coefficients, and different water vapor diffusion coefficients directly affect the water vapor diffusion motion of the bridge deck. Therefore, the water vapor diffusion coefficient corresponding to each layer of the bridge deck can be determined according to the specific structure of the bridge deck.

[0026] S102, determine the altitude and temperature of the bridge deck location, and correct the water vapor diffusion coefficient of each layer of the bridge deck structure based on the altitude and temperature to obtain the corrected water vapor diffusion coefficient.

[0027] In this embodiment of the invention, since different pressures and temperatures affect the water vapor diffusion motion on the bridge deck, it is necessary to determine the altitude and temperature of the bridge deck location before analyzing the water vapor diffusion motion using a two-dimensional finite element model of the bridge deck. Altitude and temperature directly affect the water vapor diffusion coefficient; therefore, the water vapor diffusion coefficient of each structure in the two-dimensional finite element model of the bridge deck needs to be corrected based on the altitude and temperature of the bridge deck location to obtain a corrected water vapor diffusion coefficient. Specifically, the correction process for the water vapor diffusion coefficient will be described in detail later in this invention.

[0028] S103, using a modified water vapor diffusion coefficient based on a two-dimensional finite element model of the bridge deck, we performed accumulation-type water vapor motion simulation and penetration-type water vapor motion simulation on the bridge deck to obtain the water vapor diffusion analysis results of the bridge deck.

[0029] In this embodiment of the invention, the water vapor diffusion motion on the bridge deck can be divided into penetrating water vapor motion and accumulating water vapor motion. Different types of water vapor diffusion motion will have different effects on the water vapor concentration on the bridge deck. Therefore, after completing the correction of the water vapor diffusion coefficient of each layer of the two-dimensional finite element model of the bridge deck, it is also necessary to model the accumulating water vapor motion and penetrating water vapor motion in the bridge deck respectively to obtain accurate water vapor diffusion analysis results on the bridge deck.

[0030] The bridge deck water vapor diffusion analysis method provided by this invention constructs a two-dimensional finite element analysis model of the bridge deck based on its structure and sets the water vapor diffusion coefficients for each layer of the bridge deck structure, taking into account the influence of the bridge deck structure on water vapor diffusion and improving the accuracy of water vapor diffusion analysis. By determining the altitude and temperature of the bridge deck location, the water vapor diffusion coefficients of each layer of the bridge deck structure are corrected, taking into account the influence of pressure and temperature on bridge deck water vapor diffusion. By simulating the accumulation-type water vapor movement and the penetration-type water vapor movement of the bridge deck, the influence of different water vapor movement types on bridge deck water vapor diffusion is considered. This invention comprehensively considers the influence of multiple factors on bridge deck water vapor diffusion, making the analysis of bridge deck water vapor diffusion more accurate and beneficial to bridge deck design.

[0031] In some possible embodiments of the present invention, a two-dimensional finite element model of the bridge deck is constructed based on the bridge deck structure, including: A two-dimensional finite element model of the bridge deck, including a leveling layer, a waterproof bonding layer, a protective layer, and a wear-resistant layer, was constructed based on the bridge deck structure, and the material parameters and corresponding initial water vapor diffusion coefficients of each layer were configured.

[0032] In this embodiment of the invention, a specific embodiment is taken as an example, such as... Figure 2 The diagram shows a possible two-dimensional finite element model of the bridge deck, consisting of, from bottom to top, a 120mm leveling layer (C40 cement concrete), a 12.3mm waterproof bonding layer, a 50mm protective layer (AC-20C asphalt concrete), and a 40mm wearing course (SMA-13 ​​asphalt concrete). The waterproof bonding layer is a synchronously premixed asphalt aggregate, simplified into a three-layer structure, from bottom to top: 1.4mm asphalt, 10mm aggregate, and 0.9mm asphalt. Furthermore, the initial water vapor diffusion coefficients of the materials involved in the two-dimensional finite element model of the bridge deck were tested and determined, as shown in Table 1.

[0033] Table 1: Initial water vapor diffusion coefficients for each material

[0034] This invention provides a possible two-dimensional finite element model of a bridge deck, and configures the material parameters of each layer of the structure in the model and the corresponding initial water vapor diffusion coefficient, which facilitates the analysis of subsequent water vapor diffusion motion.

[0035] In some possible embodiments of the present invention, such as Figure 3 As shown, the elevation and temperature of the bridge deck location are determined, including: S301, determine the average elevation of the bridge deck location; S302, obtain the historical temperature curves of each layer of the bridge deck structure within a historical time period, and fit the predicted temperature curves of each layer of the bridge deck structure within a future time period based on the historical temperature curves of each layer of the bridge deck structure.

[0036] In this embodiment of the invention, since different pressures and temperatures affect the diffusion of water vapor on the bridge deck, it is necessary to first determine the altitude and temperature of the bridge deck's location. Altitude can be directly measured using an altimeter, while temperature is a quantity that changes over time. Water vapor diffusion occurs slowly over time after the bridge deck is built; therefore, the predicted future temperature curve of the bridge deck can be determined by combining the occurrence cycle of water vapor diffusion with historical temperature curves.

[0037] Specifically, the temperatures of different structural layers within the bridge deck vary, and these temperatures affect the water vapor diffusion coefficients of each layer. Therefore, determining the relationship between bridge deck temperature and time requires identifying the temperature variations across different structural layers within the bridge deck. Numerical simulations of the bridge deck temperature field were conducted on representative dates in January and August 2025 for a specific location. The simulations revealed the temperature variations of each layer along the depth direction over 24 hours. The average temperature of each layer was extracted, and the difference between this average and the monthly average temperature was calculated. The monthly average temperature and the temperature conditions of each layer of the bridge deck in January and August are shown below. Figure 4 As shown, a polynomial is used to fit the relationship curve between air temperature and month. By comparing the fitting effects of polynomials of different orders, it is found that the fourth-order polynomial has a better fitting effect. Using the temperature data of each layer of the bridge deck in the known months as the benchmark, the temperature of the layers in other months can be extrapolated. Specifically, the coefficients of the higher-order terms in the original equation are retained, and the constant term A and the coefficient of the first-order term B are adjusted as shown below:

[0038] Where T represents temperature and x represents month, substituting the data from January and August into the above formula, a system of equations is constructed to determine the A and B values ​​for each layer, thus obtaining the temperature distribution of each layer of the bridge deck over the 12 months, as shown below. Figure 5 As shown in the figure, the extrapolated temperature curve of the bridge deck layer has a relatively consistent trend with the actual air temperature curve, that is, the calculation equation has a better effect on temperature prediction for non-sampling months.

[0039] This invention provides a method for determining the temperature of each layer of a bridge deck structure, taking into account the influence of temperature on water vapor diffusion, resulting in more accurate water vapor diffusion analysis.

[0040] In some possible embodiments of the present invention, such as Figure 6 As shown, the water vapor diffusion coefficient of each layer of the bridge deck structure is corrected based on altitude and temperature to obtain the corrected water vapor diffusion coefficient, including: S601, based on the altitude, determines the pressure at the location of the bridge deck, and calculates the first corrected water vapor diffusion coefficient of each layer of the bridge deck structure under the pressure based on the preset pressure correction formula. S602, calculates the second corrected water vapor diffusion coefficient of each layer of the bridge deck structure based on the preset temperature correction formula and the predicted temperature curve. S603, the modified water vapor diffusion coefficient of each layer of the bridge deck structure is determined based on the first modified water vapor diffusion coefficient and the second modified water vapor diffusion coefficient.

[0041] In this embodiment of the invention, the influence mechanism of altitude on water vapor movement on the bridge deck is characterized by the effect of air pressure change on the water vapor diffusion coefficient of the material. Specifically, the gas diffusion coefficient decreases with increasing pressure. Under isothermal conditions, if the interaction between molecules is not considered, the theoretical model can be simplified as follows:

[0042] Where D is the water vapor diffusion coefficient at pressure P. Standard atmospheric pressure Based on the corresponding water vapor diffusion coefficient, and combined with the pressure corresponding to different altitudes, the first corrected water vapor diffusion coefficient for different altitudes can be calculated, as shown in Table 2: Table 2: First Corrected Water Vapor Diffusion Coefficient at Different Altitudes

[0043] In this embodiment of the invention, the increase in altitude of the bridge deck significantly accelerates the water vapor diffusion process. The time required for the water vapor concentration in the waterproof bonding layer inside the bridge deck to reach equilibrium is linearly related to the altitude. Specifically, for every 500m increase in altitude, the time for the bridge deck structure to reach water vapor concentration equilibrium is shortened by approximately 720 days.

[0044] Furthermore, temperature is one of the key factors affecting the movement of water vapor in asphalt mixtures. The movement speed of water molecules is closely related to temperature, and the relationship between the water vapor diffusion coefficient and temperature is as follows:

[0045] in, D The water vapor diffusion coefficient, A For the fitting parameters, T Thermodynamic temperature E For activation energy, R is the gas constant.

[0046] By testing the diffusion coefficients of the materials at various temperatures, the water vapor diffusion coefficients of various materials at different temperatures were obtained, such as... Figure 7 As shown, the test data for each material were fitted using the Arrhenius equation, and the fitting results are summarized below:

[0047] in, The goodness of fit is indicated by the fitting curve, which can be used to effectively predict the water vapor diffusion coefficient of a material at any temperature.

[0048] The embodiments of the present invention consider the influence of temperature and altitude on the water vapor diffusion coefficient, and then correct the water vapor diffusion coefficient to ensure the accuracy of subsequent water vapor diffusion motion simulation.

[0049] In some possible embodiments of the present invention, such as Figure 8 As shown, a modified water vapor diffusion coefficient is used to simulate the accumulation-type and penetration-type water vapor movement of water vapor on the bridge deck using a two-dimensional finite element model of the bridge deck. The simulations include: S801, set the initial conditions and boundary conditions of the two-dimensional finite element model of the bridge deck. The initial conditions include the initial water vapor concentration of each layer of the two-dimensional finite element model of the bridge deck and the corrected water vapor diffusion coefficient of each layer. The boundary conditions include the maximum water vapor concentration in the two-dimensional finite element model of the bridge deck. S802, using a two-dimensional finite element model of the bridge deck with the first time span as the step size, the water vapor diffusion of the bridge deck is simulated to obtain the first relationship curve between the water vapor concentration of the bridge deck and time. S803 uses a two-dimensional finite element model of the bridge deck to simulate the water vapor diffusion of the bridge deck with a second time span as the step size, and obtains a second relationship curve between the water vapor concentration of the bridge deck and time, wherein the first time span is smaller than the second time span.

[0050] In this embodiment of the invention, to ensure the accuracy of the water vapor diffusion motion model, it is necessary to first set initial conditions and boundary conditions for the two-dimensional finite element model of the bridge deck, as follows: Taking a monthly average temperature of 28.8℃ and an average humidity of 79% as an example, the calculated water vapor concentration is 22.46 g / m³. The initial conditions are:

[0051] Where C is the water vapor concentration, t is the water vapor diffusion time, and y is... Figure 2 The longitudinal axis of the bridge deck structure coordinate system is a cement concrete layer within the range of 0 to 120 mm.

[0052] Further boundary conditions are set as follows:

[0053] Here, y=222.3 mm corresponds to the top surface of the bridge deck structure. This interface is the interaction surface between the bridge deck system and the external environment, and it bears the environmental load.

[0054] In this embodiment of the invention, because the time required for accumulation-type water vapor movement and penetration-type water vapor movement to reach equilibrium during water vapor diffusion differs significantly, monthly average temperature and humidity data are selected for analysis of accumulation-type water vapor movement, while hourly temperature and humidity data are selected for analysis of penetration-type water vapor movement. Specifically, for accumulation-type water vapor movement, the relationship curves between water vapor concentration and diffusion time at various points inside the waterproof adhesive layer are as follows: Figure 9 As shown, in the bottom layer (120mm) of the waterproof adhesive layer, the initial water vapor concentration of the cement concrete is relatively high in the initial stage. Over time, the water vapor concentration gradually decreases and stabilizes at around 10 g / m³ after approximately 10,000 days. Inside the waterproof adhesive layer, the closer to the lower layer, the earlier the water vapor concentration stabilizes, and the rate of change at any given time point is relatively low. Regarding penetrating water vapor movement, under dynamic humidity conditions, the water vapor concentration inside the waterproof adhesive layer fluctuates over time. From... Figure 10 It can be seen that the variation in water vapor concentration in the lower layer of asphalt is smaller than that in the upper layer of asphalt.

[0055] In this embodiment of the invention, the formula for calculating water vapor concentration is:

[0056] in, C For water vapor concentration, The molar mass of water, R The gas constant is T Thermodynamic temperature It is the saturated vapor pressure. RH This refers to relative humidity.

[0057] In this embodiment of the invention, considering that relative humidity is a quantity that fluctuates with temperature, the same relative humidity value corresponds to significant differences in water vapor concentration at different temperatures. Therefore, this invention uses the change in water vapor concentration at the bonding layer to characterize the movement of water vapor on the bridge deck.

[0058] Furthermore, the results of the water vapor diffusion analysis on the bridge deck were obtained, including: Based on the first and second relationship curves, the time required for the fluctuation rate of water vapor concentration on the bridge deck to be less than the preset fluctuation rate is determined.

[0059] In this embodiment of the invention, taking an average altitude of 23.3m and an atmospheric pressure of 101.07kPa as an example, the corrected value of the water vapor diffusion coefficient was calculated to be 1.00252. Combining the Arrhenius equation relationship between the diffusion coefficient of each material layer and temperature, the diffusion coefficient data of the 14 layers of the bridge deck for the 12 months of the year were finally obtained. Functional relationships between air temperature, diffusion coefficient of each layer, and month were established. The defined functions were input into the boundary conditions and material properties of the model. After calculation, the water vapor concentration distribution inside the bridge deck under the coupling effect of multiple physical layers can be obtained. The water vapor concentration data of the waterproof bonding layer (120-132.3mm) and the relationship between water vapor diffusion time were plotted on... Figure 11 In the simulation, the water vapor concentration changed rapidly in the first 3600 days, gradually leveling off and eventually stabilizing at 11 g / m³. Furthermore, the curve no longer showed a smooth upward trend but rather a fluctuating one. This is mainly because each point on the curve is 180 days apart, and the simulated environment saw both temperature and water vapor concentration peak in July, while January saw both water vapor concentration and temperature at their lowest points of the year. This resulted in significant differences in boundary conditions and material diffusion coefficients between adjacent points on the same curve, leading to the fluctuating slope. The variation rate of water vapor concentration in the waterproof adhesive layer at different time points is shown below. Figure 12 As shown, in the initial stage of water vapor movement, the large internal and external water vapor concentration gradient leads to a high water vapor diffusion flux, resulting in rapid changes in water vapor concentration at the waterproof bonding layer and significant fluctuations in the concentration change rate. Over time, the water vapor concentration change at the waterproof bonding layer decreases. After 7200 days of water vapor movement, the concentration change rate at all layers is below 1.5%, indicating that the water vapor concentration gradually reaches equilibrium. Simultaneously, the fluctuation range of the water vapor concentration change rate gradually decreases. After 9000 days of water vapor movement, the fluctuation range is less than 0.2%, indicating that the water vapor concentration change rate within the waterproof bonding layer tends to stabilize, and the water vapor movement process gradually becomes stable.

[0060] To better implement the bridge deck water vapor diffusion analysis method in this embodiment of the invention, based on the bridge deck water vapor diffusion analysis method, correspondingly, as follows: Figure 13 As shown, this embodiment of the invention also provides a bridge deck water vapor diffusion analysis device, the bridge deck water vapor diffusion analysis device 1300 comprising: Model building module 1301 is used to build a two-dimensional finite element model of the bridge deck based on the bridge deck structure. The two-dimensional finite element model of the bridge deck includes the water vapor diffusion coefficient of each layer of the bridge deck structure. The diffusion coefficient correction module 1302 is used to determine the altitude and temperature of the bridge deck location, and correct the water vapor diffusion coefficient of each layer of the bridge deck structure based on the altitude and temperature to obtain the corrected water vapor diffusion coefficient. The water vapor diffusion analysis module 1303 is used to simulate the accumulation-type water vapor motion and the penetration-type water vapor motion of the bridge deck based on a two-dimensional finite element model of the bridge deck using a modified water vapor diffusion coefficient, so as to obtain the water vapor diffusion analysis results of the bridge deck.

[0061] The bridge deck water vapor diffusion analysis device 1300 provided in the above embodiments can realize the technical solutions described in the above embodiments of the bridge deck water vapor diffusion analysis method. The specific implementation principles of each module or unit can be found in the corresponding content in the above embodiments of the bridge deck water vapor diffusion analysis method, which will not be repeated here.

[0062] like Figure 14 As shown, the present invention also provides an electronic device 1400. The electronic device 1400 includes a processor 1401, a memory 1402, and a display 1403. Figure 14 Only some components of the electronic device 1400 are shown, but it should be understood that it is not required to implement all the components shown, and more or fewer components may be implemented instead.

[0063] In some embodiments, processor 1401 may be a central processing unit (CPU), a microprocessor, or other data processing chip, used to run program code stored in memory 1402 or process data, such as the bridge deck water vapor diffusion analysis method of the present invention.

[0064] In some embodiments, processor 1401 may be a single server or a group of servers. The server group may be centralized or distributed. In some embodiments, processor 1401 may be local or remote. In some embodiments, processor 1401 may be implemented on a cloud platform. In some embodiments, the cloud platform may include a private cloud, public cloud, hybrid cloud, community cloud, distributed cloud, internal cloud, multi-cloud, or any combination thereof.

[0065] In some embodiments, memory 1402 may be an internal storage unit of electronic device 1400, such as a hard disk or memory of electronic device 1400. In other embodiments, memory 1402 may also be an external storage device of electronic device 1400, such as a plug-in hard disk, smart media card (SMC), secure digital (SD) card, flash card, etc., provided on electronic device 1400.

[0066] Furthermore, the memory 1402 may include both internal storage units of the electronic device 1400 and external storage devices. The memory 1402 is used to store application software and various types of data installed on the electronic device 1400.

[0067] In some embodiments, display 1403 may be an LED display, a liquid crystal display, a touch-sensitive liquid crystal display, or an OLED (Organic Light-Emitting Diode) touchscreen. Display 1403 is used to display information from electronic device 1400 and to display a visual user interface. Components 1401-1403 of electronic device 1400 communicate with each other via a system bus.

[0068] In some embodiments, when the processor 1401 executes the bridge surface water vapor diffusion analysis program in the memory 1402, the following steps may be performed: A two-dimensional finite element model of the bridge deck is constructed based on the bridge deck structure. The two-dimensional finite element model of the bridge deck includes the water vapor diffusion coefficient of each layer of the bridge deck structure. Determine the altitude and temperature of the bridge deck location, and correct the water vapor diffusion coefficient of each layer of the bridge deck structure based on the altitude and temperature to obtain the corrected water vapor diffusion coefficient. Using a modified water vapor diffusion coefficient, a two-dimensional finite element model of the bridge deck was used to simulate the accumulation and penetration of water vapor on the bridge deck, and the analysis results of water vapor diffusion on the bridge deck were obtained.

[0069] It should be understood that when the processor 1401 executes the bridge surface water vapor diffusion analysis program in the memory 1402, in addition to the functions mentioned above, it can also perform other functions, as can be found in the description of the corresponding method embodiments above.

[0070] Furthermore, the embodiments of the present invention do not specifically limit the type of the electronic device 1400 mentioned. The electronic device 1400 can be a mobile phone, tablet computer, personal digital assistant (PDA), wearable device, laptop computer, or other portable electronic device. Exemplary embodiments of portable electronic devices include, but are not limited to, portable electronic devices running iOS, Android, Microsoft, or other operating systems. The aforementioned portable electronic device can also be other portable electronic devices, such as a laptop computer with a touch-sensitive surface (e.g., a touch panel). It should also be understood that in some other embodiments of the present invention, the electronic device 1400 may not be a portable electronic device, but rather a desktop computer with a touch-sensitive surface (e.g., a touch panel).

[0071] Accordingly, this application also provides a computer-readable storage medium for storing computer-readable programs or instructions. When the programs or instructions are executed by a processor, they can implement the steps or functions of the bridge deck water vapor diffusion analysis methods provided in the above-described method embodiments.

[0072] Those skilled in the art will understand that all or part of the processes of the methods described in the above embodiments can be implemented by a computer program instructing related hardware, and the program can be stored in a computer-readable storage medium. The computer-readable storage medium may be a disk, optical disk, read-only memory, or random access memory, etc.

[0073] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A bridge deck water vapor diffusion analysis method characterized by, The method comprises the following steps: constructing a bridge deck two-dimensional finite element model based on a bridge deck structure, the bridge deck two-dimensional finite element model comprising water vapor diffusion coefficients of each layer structure of the bridge deck; determining an altitude and a temperature of a location where the bridge deck is located, and correcting the water vapor diffusion coefficients of each layer structure of the bridge deck based on the altitude and the temperature to obtain corrected water vapor diffusion coefficients; performing accumulation-type water vapor movement simulation and penetration-type water vapor movement simulation on water vapor diffusion of the bridge deck based on the bridge deck two-dimensional finite element model and the corrected water vapor diffusion coefficients to obtain water vapor diffusion analysis results of the bridge deck.

2. The bridge deck water vapor diffusion analysis method of claim 1, wherein, The step of constructing the bridge deck two-dimensional finite element model based on the bridge deck structure comprises: constructing a bridge deck two-dimensional finite element model comprising a leveling layer, a waterproof bonding layer, a protective layer and a wear-resistant layer based on the bridge deck structure, and configuring material parameters and corresponding initial water vapor diffusion coefficients of each layer structure.

3. The bridge deck water vapor diffusion analysis method of claim 1, wherein, The step of determining the altitude and the temperature of the location where the bridge deck is located comprises: determining an average altitude of the location where the bridge deck is located; obtaining historical temperature curves of each layer structure of the bridge deck in a historical time period, and fitting a predicted temperature curve of each layer structure of the bridge deck in a future time period based on the historical temperature curves of each layer structure of the bridge deck.

4. The bridge deck water vapor diffusion analysis method of claim 3, wherein, The step of correcting the water vapor diffusion coefficients of each layer structure of the bridge deck based on the altitude and the temperature to obtain corrected water vapor diffusion coefficients comprises: determining a pressure of the location where the bridge deck is located based on the altitude, and calculating a first corrected water vapor diffusion coefficient of each layer structure of the bridge deck under the pressure based on a preset pressure correction formula; calculating a second corrected water vapor diffusion coefficient of each layer structure of the bridge deck based on a preset temperature correction formula and the predicted temperature curve; determining the corrected water vapor diffusion coefficient of each layer structure of the bridge deck based on the first corrected water vapor diffusion coefficient and the second corrected water vapor diffusion coefficient.

5. The bridge deck water vapor diffusion analysis method of claim 1, wherein, The step of performing accumulation-type water vapor movement simulation and penetration-type water vapor movement simulation on water vapor diffusion of the bridge deck based on the bridge deck two-dimensional finite element model and the corrected water vapor diffusion coefficients comprises: setting initial conditions and boundary conditions of the bridge deck two-dimensional finite element model, the initial conditions comprising initial water vapor concentrations of each layer structure in the bridge deck two-dimensional finite element model and the corrected water vapor diffusion coefficients of each layer structure, and the boundary conditions comprising a maximum water vapor concentration in the bridge deck two-dimensional finite element model; performing accumulation-type water vapor movement simulation on water vapor diffusion of the bridge deck by taking a first time span as a step based on the bridge deck two-dimensional finite element model to obtain a first relationship curve between water vapor concentrations of the bridge deck and time; performing penetration-type water vapor movement simulation on water vapor diffusion of the bridge deck by taking a second time span as a step based on the bridge deck two-dimensional finite element model to obtain a second relationship curve between water vapor concentrations of the bridge deck and time, wherein the first time span is smaller than the second time span.

6. The bridge deck water vapor diffusion analysis method of claim 5, wherein, The calculation formula of the water vapor concentration is: wherein C is the water vapor concentration, is the molar mass of water, R is the gas constant, T is the thermodynamic temperature, is the saturation vapor pressure, RH is the relative humidity.

7. The bridge deck water vapor diffusion analysis method of claim 5, wherein, The step of obtaining the water vapor diffusion analysis results of the bridge deck comprises: determining a time length required for a fluctuation change rate of the water vapor concentrations of the bridge deck to be less than a preset fluctuation change rate based on the first relationship curve and the second relationship curve.

8. A bridge deck water vapor diffusion analysis apparatus characterized by comprising: The method comprises the following steps: A model construction module is configured to construct a bridge deck two-dimensional finite element model based on a bridge deck structure, the bridge deck two-dimensional finite element model including water vapor diffusion coefficients of each layer structure of the bridge deck; A diffusion coefficient correction module is configured to determine an altitude and a temperature of a location where the bridge deck is located, correct the water vapor diffusion coefficients of each layer structure of the bridge deck based on the altitude and the temperature, and obtain corrected water vapor diffusion coefficients; A water vapor diffusion analysis module is configured to perform an accumulation type water vapor movement simulation and a penetration type water vapor movement simulation on the water vapor diffusion of the bridge deck based on the bridge deck two-dimensional finite element model by using the corrected water vapor diffusion coefficients, and obtain water vapor diffusion analysis results of the bridge deck.

9. An electronic device, comprising: comprise a memory and a processor, wherein, The memory is configured to store a program. The processor is coupled to the memory and is configured to execute the program stored in the memory to implement the steps of the bridge deck water vapor diffusion analysis method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, A computer readable program or instruction is stored, and the program or instruction is executed by a processor to implement the steps of the bridge deck water vapor diffusion analysis method according to any one of claims 1 to 7.

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