Semiconductor laser and method of manufacturing the same

By introducing an electron energy relaxation structure and a piezoelectric polarization field into a semiconductor laser, combined with an electron blocking layer, the electron leakage problem was solved, the electro-optical conversion efficiency and luminous efficiency were improved, and the operating voltage was reduced.

CN121307639BActive Publication Date: 2026-06-02SUZHOU GANBRIGHT OPTOELECTRONIC TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SUZHOU GANBRIGHT OPTOELECTRONIC TECHNOLOGY CO LTD
Filing Date
2025-12-11
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

Existing GaN-based laser diodes in semiconductor lasers suffer from low electro-optical conversion efficiency, especially under high current injection conditions where severe electron leakage leads to a continuous decrease in efficiency.

Method used

An electronic energy relaxation structure is adopted, including a first barrier layer, an electronic energy relaxation layer and a second barrier layer, to form a quantum well structure. The electronic energy level is split through the quantum confinement effect to slow down the thermal motion speed of electrons. Combined with the piezoelectric polarization field and the electron blocking layer, electron leakage is blocked, thus maintaining the hole injection efficiency.

Benefits of technology

It improves the electro-optical conversion efficiency of semiconductor lasers, reduces electron leakage, lowers the operating voltage, and enhances luminous efficiency.

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Abstract

The application provides a semiconductor laser and a preparation method thereof. The semiconductor laser comprises, which are sequentially stacked in a first direction, a lower confinement layer, a lower waveguide layer, an electron energy relaxation structure, an active layer, an upper waveguide layer and an upper confinement layer. The electron energy relaxation structure comprises, which are sequentially stacked in the first direction, a first barrier layer, an electron energy relaxation layer and a second barrier layer. The second barrier layer is located between the electron energy relaxation layer and the active layer. The energy level of the conduction band bottom of the first barrier layer and the energy level of the conduction band bottom of the second barrier layer are higher than the energy level of the conduction band bottom of the electron energy relaxation layer respectively.
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