Light-emitting chip and manufacturing method thereof
By setting an atomic repair layer on the etched surface of the epitaxial layer and performing electron beam scanning, the problem of high-density dislocations and non-radiative recombination centers on the surface of the epitaxial layer was solved, thereby improving the luminous efficiency of the light-emitting chip.
Patent Information
- Application Number
- CN202511466535.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-14
- Publication Date
- 2026-01-13
AI Technical Summary
During the fabrication of light-emitting chips, high-density dislocations and non-radiative recombination centers are prone to appear on the surface of the epitaxial layer, leading to a decrease in luminous efficiency.
An atomic repair layer is set on the etched surface of the epitaxial layer, and atoms are provided by electron beam scanning to repair holes in the epitaxial layer, reduce electron leakage, and increase electron concentration.
It improves the phenomenon of high-density dislocations and nonradiative recombination centers generated during epitaxial layer etching, enhances the photoelectric conversion efficiency of the light-emitting unit, and improves the luminous efficiency of the light-emitting chip.
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Figure CN121335313A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] Embodiments of the present application relate to the technical field of display, and in particular, to a light emitting chip and a manufacturing method thereof. BACKGROUND
[0002] In the process of manufacturing the light emitting chip, the epitaxial layer needs to be etched. In the etching process, high-density dislocations and non-radiative recombination centers (>10¹¹ cm⁻²) are prone to occur on the surface of the epitaxial layer (for example, the sidewall of the epitaxial layer), which leads to a decrease in the light emitting efficiency of the light emitting chip. SUMMARY
[0003] The present application provides a light emitting chip and a manufacturing method thereof to improve the light emitting efficiency of the light emitting chip.
[0004] In a first aspect, an embodiment of the present application provides a light emitting chip, comprising at least one light emitting unit and an atomic repair layer; the light emitting unit comprises an epitaxial layer, the epitaxial layer comprises an etching surface, and the atomic repair layer at least partially covers the etching surface; the atomic repair layer is configured to provide atoms for the etching surface.
[0005] Optionally, the material of the atomic repair layer comprises .
[0006] Optionally, the thickness of the atomic repair layer ranges from 3 nm to 10 nm.
[0007] Optionally, the light emitting chip further comprises a light reflecting layer, the light reflecting layer is arranged on the side of the atomic repair layer away from the epitaxial layer, and the light reflecting layer is configured to reflect the light generated by the epitaxial layer.
[0008] Optionally, the light emitting unit further comprises an ohmic contact layer, the epitaxial layer comprises a first semiconductor layer, a quantum well layer and a second semiconductor layer arranged in a stack, the ohmic contact layer is arranged on the side of the first semiconductor layer away from the quantum well layer, the ohmic contact layer has a first exposed surface, the second semiconductor layer has a second exposed surface, the side surface of the first semiconductor layer, the side surface of the quantum well layer, the side surface of the second semiconductor layer, and at least part of the first exposed surface and at least part of the second exposed surface constitute the etching surface.
[0009] Optionally, the light emitting chip further comprises a first electrode and a second electrode; one end of the first electrode is arranged on the first exposed surface, and the other end of the first electrode extends to the back light surface of the light emitting chip; one end of the second electrode is arranged on the second exposed surface, and the other end of the second electrode extends to the back light surface of the light emitting chip; wherein the back light surface of the light emitting chip is arranged opposite to the light emitting surface of the light emitting chip.
[0010] Optionally, the light emitting chip comprises a substrate and first and second light emitting units stacked on the substrate; the light emitting chip further comprises a connecting electrode and a bonding layer; the connecting electrode is connected with a first electrode of the first light emitting unit and a second electrode of the second light emitting unit; the bonding layer is arranged between the first and second light emitting units, and is used for bonding the first and second light emitting units.
[0011] Optionally, the light emitting chip further comprises a packaging layer, the packaging layer at least partially covers the backplane and exposes the first and second electrodes.
[0012] In a second aspect, an embodiment of the present application provides a manufacturing method of a light emitting chip, comprising:
[0013] The epitaxial layer of the light emitting unit is patterned so as to comprise an etching surface;
[0014] An atomic repair layer is formed on the etching surface; the atomic repair layer at least partially covers the etching surface;
[0015] The atomic repair layer is subjected to electron beam scanning so as to provide atoms for the etching surface.
[0016] Optionally, the epitaxial layer is arranged on a substrate, the light emitting chip comprises a substrate and first and second light emitting units stacked on the substrate; before the epitaxial layer of the light emitting unit is patterned so as to comprise an etching surface, the method further comprises:
[0017] The first light emitting unit is bonded with the substrate;
[0018] The substrate under the epitaxial layer of the first light emitting unit is peeled off, and the second light emitting unit is bonded with the first light emitting unit;
[0019] The substrate under the epitaxial layer of the second light emitting unit is peeled off.
[0020] The technical solution of the embodiment of the present application, by arranging the atomic repair layer at least partially covering the etching surface of the epitaxial layer, the atomic repair layer can provide atoms for the epitaxial layer, repair the vacancies in the epitaxial layer, i.e. "fill the holes" of the epitaxial layer, so as to improve the high-density dislocation and non-radiative recombination center phenomenon generated during etching of the epitaxial layer, reduce the phenomenon of electron leakage from the epitaxial layer sidewall in the light emitting unit, improve the electron concentration in the light emitting unit, and further improve the photoelectric conversion efficiency of the light emitting unit, i.e. improve the light emitting efficiency of the light emitting chip. BRIEF DESCRIPTION OF DRAWINGS
[0021] Figure 1A structure schematic diagram of a light emitting chip provided by an embodiment of the present application is shown in FIG. 1.
[0022] Figure 2 A structure schematic diagram of another light emitting chip provided by an embodiment of the present application is shown in FIG. 2.
[0023] Figure 3 A structure schematic diagram of another light emitting chip provided by an embodiment of the present application is shown in FIG. 3.
[0024] Figure 4 A flowchart of a manufacturing method of a light emitting chip provided by an embodiment of the present application is shown in FIG. 4.
[0025] Figure 5 A structure schematic diagram of a light emitting chip corresponding to step S110 provided by an embodiment of the present application is shown in FIG. 5.
[0026] Figure 6 A structure schematic diagram of a light emitting chip corresponding to step S120 provided by an embodiment of the present application is shown in FIG. 6.
[0027] Figure 7 A structure schematic diagram of a light emitting chip corresponding to forming a light reflecting layer provided by an embodiment of the present application is shown in FIG. 7.
[0028] Figure 8 A structure schematic diagram of a light emitting chip corresponding to etching the atomic repair layer and the light reflecting layer provided by an embodiment of the present application is shown in FIG. 8.
[0029] Figure 9 A structure schematic diagram of a light emitting chip corresponding to forming a partial electrode provided by an embodiment of the present application is shown in FIG. 9.
[0030] Figure 10 A structure schematic diagram of a light emitting chip corresponding to forming a packaging layer provided by an embodiment of the present application is shown in FIG. 10.
[0031] Figure 11 A structure schematic diagram of another light emitting chip corresponding to forming a partial electrode provided by an embodiment of the present application is shown in FIG. 11.
[0032] Figure 12 A structure schematic diagram of a light emitting chip after peeling off the substrate under the epitaxial layer of the second light emitting unit provided by an embodiment of the present application is shown in FIG. 12. DETAILED DESCRIPTION
[0033] The present application will be further described below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are intended to serve only as an explanation of the present application and not as a limitation thereof. It should also be noted that, for the sake of convenience, only the parts related to the present application are shown in the drawings rather than all the parts.
[0034] Figure 1A structure diagram of a light emitting chip is provided in the embodiments of the present application. As shown in the figure, the light emitting chip comprises at least one light emitting unit 10 and an atomic repair layer 20; the light emitting unit 10 comprises an epitaxial layer 11, the epitaxial layer 11 comprises an etching surface S1, and the atomic repair layer 20 at least partially covers the etching surface S1; the atomic repair layer 20 is used to provide atoms for the etching surface S1. Figure 1
[0035] Specifically, the epitaxial layer 11 can comprise a buffer layer, an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, etc. In the process of manufacturing the light emitting unit 10, the epitaxial layer 11 can be first grown on a substrate, and then the sidewall of the epitaxial layer 11 is etched to form the etching surface S1. The etching surface S1 is a surface formed by etching the light emitting unit 10 in the manufacturing process. For example, the sidewall of the epitaxial layer 11 can be etched to an angle of 60°-90° (included angle with the horizontal direction) by using an inductively coupled plasma (ICP) etching method. At this time, a hole is generated in the epitaxial layer 11 by an electron. After the etching of the epitaxial layer 11 is completed, the atomic repair layer 20 is formed on the etching surface S1, and the atomic repair layer 20 can provide atoms to the epitaxial layer 11 to repair the hole generated by the electron. That is, the atoms provided by the atomic repair layer 20 diffuse to the epitaxial layer 11 to “fill the hole”, thereby improving the phenomenon of high-density dislocation and non-radiative recombination center generated in the etching of the epitaxial layer 11, reducing the phenomenon of electron leakage from the sidewall of the epitaxial layer 11 in the light emitting unit 10, improving the electron concentration in the light emitting unit 10, and further improving the photoelectric conversion efficiency of the light emitting unit 10, i.e., improving the light emitting efficiency of the light emitting chip.
[0036] The technical scheme of the present embodiment is that the atomic repair layer is at least partially covered on the etching surface of the epitaxial layer, so that the atomic repair layer can provide atoms to the epitaxial layer to repair the hole in the epitaxial layer, i.e., to “fill the hole” of the epitaxial layer, thereby improving the phenomenon of high-density dislocation and non-radiative recombination center generated in the etching of the epitaxial layer, reducing the phenomenon of electron leakage from the sidewall of the epitaxial layer in the light emitting unit, improving the electron concentration in the light emitting unit, and further improving the photoelectric conversion efficiency of the light emitting unit, i.e., improving the light emitting efficiency of the light emitting chip.
[0037] In some embodiments, the material of the atomic repair layer 20 comprises After the epitaxial layer 11 is etched, the etching surface S1 can be sputter-deposited with so as to coat the etching surface S1. Then the is subjected to electron beam light scanning, Al atoms in the atom repair layer 20 can diffuse into the epitaxial layer 11 to "fill the holes," allowing the "defects" caused by the etching of the epitaxial layer 11 to heal automatically. This improves the phenomenon of high-density dislocations and non-radiative recombination centers generated during epitaxial layer etching, reduces the leakage of electrons from the sidewalls of the epitaxial layer in the light-emitting unit, increases the electron concentration in the light-emitting unit 10, and thus improves the luminous efficiency of the light-emitting chip. For example, when performing a light electron beam scan on the atom repair layer 20, a 10keV electron beam scan with a scanning electron microscope (SEM) can be used for 30 seconds, so that the electron beam dose is approximately equal to... It can achieve Al atoms diffuse in.
[0038] In some embodiments, the thickness of the atomic repair layer 20 is in the range of 3nm-10nm, which can ensure that the atomic repair layer 20 provides a certain concentration of atoms, while avoiding light absorption caused by the atomic repair layer 20 being too thick, thus ensuring the luminous efficiency of the light-emitting chip.
[0039] Figure 2 This is a schematic diagram of another light-emitting chip provided in an embodiment of the present invention. (See attached diagram.) Figure 2 As shown, the light-emitting chip also includes a light-reflecting layer 30, which is disposed on the side of the atomic repair layer 20 away from the epitaxial layer 11. The light-reflecting layer 30 is used to reflect the light generated by the epitaxial layer 11.
[0040] Specifically, the light-reflecting layer 30 can reflect the light generated by the epitaxial layer 11. When the light-reflecting layer 30 is disposed on the side of the atomic repair layer 20 away from the epitaxial layer 11, the light-reflecting layer 30 can reflect the light generated by the epitaxial layer 11 from the etched surface S1 to the light-emitting surface of the light-emitting chip, thereby improving the light-emitting efficiency of the light-emitting chip. For example, as shown... Figure 2 As shown, when the atomic repair layer 20 is disposed on one side of the sidewall of the epitaxial layer 11, the light-reflecting layer 30 is disposed on the side of the atomic repair layer 20 away from the epitaxial layer 11. In this case, the light-reflecting layer 30 can reflect the light emitted from the sidewall of the epitaxial layer 11. When the atomic repair layer 20 is disposed on the backlight surface S2 of the epitaxial layer 11, the light-reflecting layer 30 can reflect the light emitted from the backlight surface S2 of the epitaxial layer 11.
[0041] Furthermore, the wavelength of the light reflected by the light-reflecting layer 30 can be set according to the wavelength of the light generated by the epitaxial layer 11. For example, when the light generated by the epitaxial layer 11 is red light, the wavelength range of the light reflected by the light-reflecting layer 30 can be 600-700 nm. The light-reflecting layer 30 can be a distributed Bragg reflector (DBR), and the wavelength of the light reflected by the light-reflecting layer 30 can be adjusted by regulating the refractive index and thickness of different film layers. For example, the light-reflecting layer 30 can be... and a laminated structure of and a laminated structure.
[0042] With reference to Figure 1 and Figure 2 continuously, the light emitting unit 10 further comprises an ohmic contact layer 12, the epitaxial layer 11 comprises a first semiconductor layer 101, a quantum well layer 102 and a second semiconductor layer 103 arranged in a stack, the ohmic contact layer 12 is arranged on a side of the first semiconductor layer 101 away from the quantum well layer 102, the ohmic contact layer 12 has a first exposed surface S11, the second semiconductor layer 103 has a second exposed surface S12, a side surface of the first semiconductor layer 101, a side surface of the quantum well layer 102, a side surface of the second semiconductor layer 103, and at least part of the first exposed surface S11 and at least part of the second exposed surface S12 constitute an etching surface S1.
[0043] Specifically, the ohmic contact layer 12 can be a transparent conductive layer. For example, the material of the ohmic contact layer 12 can be indium tin oxide (ITO). The ohmic contact layer 12 is arranged on the side of the first semiconductor layer 101 away from the quantum well layer 102 and is electrically connected to the first semiconductor layer 101. At this time, the light emitting unit 10 can be arranged to be electrically connected to the electrode corresponding to the ohmic contact layer 12, and ohmic contact between the first semiconductor layer 101 and the electrode can be achieved. In the process of manufacturing the light emitting chip, after the ohmic contact layer 12 is formed, the first semiconductor layer 101, the quantum well layer 102, and the second semiconductor layer 103 can be etched so that the ohmic contact layer 12 has a first exposed surface S11 for placing an electrode electrically connected to the first semiconductor layer 101. Then the second semiconductor layer 103 can be etched so that the second semiconductor layer 103 has a second exposed surface S12 for placing an electrode electrically connected to the second semiconductor layer 103. During etching, the side surface of the first semiconductor layer 101, the side surface of the quantum well layer 102, the side surface of the second semiconductor layer 103, and the first exposed surface S11 and the second exposed surface S12 are etched, and the side surface of the first semiconductor layer 101, the side surface of the quantum well layer 102, the side surface of the second semiconductor layer 103, and the first exposed surface S11 and the second exposed surface S12 form an etching surface S1. Then an atomic repair layer 20 is formed on the etching surface S1, and the atomic repair layer 20 is subjected to electron beam light scanning, so that the atomic repair layer 20 provides atoms into the epitaxial layer 11 to repair the holes generated by the electrons. When the light emitting chip further includes a light reflecting layer 30, after the atomic repair layer 20 is subjected to electron beam light scanning, the light reflecting layer 30 can be formed on the side of the atomic repair layer 20 away from the epitaxial layer 11. After the light reflecting layer 30 is formed, the atomic repair layer 20 and the light reflecting layer 30 are etched to expose the positions of the electrodes, so that the electrodes are electrically connected to the first semiconductor layer 101 and the second semiconductor layer 103, respectively. For example, the first semiconductor layer 101 can be a P-type semiconductor layer, and the material thereof can be P-doped GaP. The second semiconductor layer 103 can be an N-type semiconductor layer, and the material thereof can be N-doped AlInP.
[0044] With reference to Figure 1 and Figure 2 , the light emitting chip further includes a first electrode 40 and a second electrode 50; one end of the first electrode 40 is arranged on the first exposed surface S11, and the other end of the first electrode 40 extends to the back light surface S2 of the light emitting chip; one end of the second electrode 50 is arranged on the second exposed surface S12, and the other end of the second electrode 50 extends to the back light surface S2 of the light emitting chip; wherein the back light surface S2 of the light emitting chip is arranged opposite to the light emitting surface S3 of the light emitting chip.
[0045] Specifically, one end of the first electrode 40 is disposed on the first exposed surface S11 and can be electrically connected to the first semiconductor layer 101 through the ohmic contact layer 12. The second electrode 50 is disposed on the second exposed surface S12 and can be electrically connected to the second semiconductor layer 103. Both the first electrode 40 and the second electrode 50 extend to the backlight surface S2 of the light-emitting chip, so that both electrodes of the light-emitting chip are located on the backlight surface S2. This simplifies the bonding process between the light-emitting chip and the driving substrate when they are electrically connected.
[0046] Figure 3 This is a schematic diagram of another light-emitting chip provided in an embodiment of the present invention. (See attached diagram.) Figures 1 to 3 As shown, the light-emitting chip includes a substrate 00 and a first light-emitting unit 110 and a second light-emitting unit 120 stacked on the substrate 00; the light-emitting chip also includes a connecting electrode 60 and a bonding layer 70; the connecting electrode 60 is electrically connected to the first electrode 40 of the first light-emitting unit 110 and the second electrode 50 of the second light-emitting unit 120 respectively; the bonding layer 70 is disposed between the first light-emitting unit 110 and the second light-emitting unit 120, and the bonding layer 70 is used to bond the first light-emitting unit 110 and the second light-emitting unit 120.
[0047] Specifically, the substrate 00 can be a transparent substrate. For example, the material of the substrate 00 can be sapphire. In this case, the surface of the substrate 00 away from the light-emitting unit 10 is the light-emitting surface S3 of the light-emitting chip. The first light-emitting unit 110 and the second light-emitting unit 120 can be stacked on the substrate 00, which can make the light-emitting chip a high-voltage light-emitting chip. The bonding layer 70 can be a transparent insulating layer to prevent the bonding layer 70 from affecting the light emitted from the light-emitting surface S3 of the second light-emitting unit 120. For example, the transmittance of the bonding layer 70 reaches more than 98%. The connecting electrode 60 is electrically connected to the first electrode 40 of the first light-emitting unit 110 and the second electrode 50 of the second light-emitting unit 120, respectively, which can realize the series connection of the first light-emitting unit 110 and the second light-emitting unit 120, thereby forming a high-voltage light-emitting chip. For example, as Figure 3As shown, the ohmic contact layer 12 of the first light emitting unit 110 has a first exposed surface S11, and the second semiconductor layer 103 of the second light emitting unit 120 has a second exposed surface S12. After the atomic repair layer 20 and the light reflection layer 30 are etched, the first electrode 40 of the first light emitting unit 110, the second electrode 50 of the second light emitting unit 120 and the connecting electrode 60 can be integrally formed, simplifying the manufacturing process of the light emitting chip. At this time, the second electrode 50 of the first light emitting unit 110 extends to the back light surface S2 of the light emitting chip as the second electrode of the light emitting chip. The first electrode 40 of the second light emitting unit 120 extends to the back light surface S2 of the light emitting chip as the first electrode of the light emitting chip. When the first semiconductor layer 101 is a P-type semiconductor layer, the first semiconductor layer 101 of the first light emitting unit 110 can be roughened to increase brightness.
[0048] It should be noted that in other embodiments, the connecting electrode 60 can also be electrically connected to the second electrode 50 of the first light emitting unit 110 and the first electrode 40 of the second light emitting unit 120 respectively, to realize series connection of the first light emitting unit 110 and the second light emitting unit 120. At this time, the first electrode 40 of the first light emitting unit 110 extends to the back light surface S2 of the light emitting chip as the first electrode of the light emitting chip. The second electrode 50 of the second light emitting unit 120 extends to the back light surface S2 of the light emitting chip as the second electrode of the light emitting chip. This is not limited here.
[0049] In some embodiments, continuing to refer to Figures 1 to 3 , the substrate 00 and the light emitting unit 10 have a transparent bonding layer 80. After the epitaxial layer 11 is formed, the epitaxial layer 11 can be bonded from the base to the substrate 00 through the transparent bonding layer 80, avoiding the transparent bonding layer 80 affecting the light emitting effect of the epitaxial layer 11. For example, the light transmittance of the transparent bonding layer 80 reaches more than 98%.
[0050] For example, when the light emitting chip is a red light emitting chip, the base material of the epitaxial layer 11 can be GaAs. After the epitaxial layer 11 is bonded from the base to the substrate 00 through the transparent bonding layer 80, the light emitting chip has a light emitting surface S3 on the substrate 00 side, which can avoid the absorption of light emitted by the epitaxial layer 11 by GaAs material (the absorption of red light by GaAs material is extremely strong, more than ), and can also avoid bonding by using a metal bonding layer, avoiding the absorption of 10%~15% of red light by the metal bonding layer, improving the light emitting rate of the light emitting chip. Moreover, the phenomenon of warping of the metal bonding layer caused by the difference in thermal expansion coefficient can be avoided, improving the reliability of the light emitting chip.
[0051] It should be noted that in some embodiments, the substrate 00 can also be peeled off, which is not limited here.
[0052] Continuing to refer toFigure 1 and Figure 3 The light-emitting chip also includes an encapsulation layer 90, which at least partially covers the backlight surface S2 and exposes the first electrode 40 and the second electrode 50.
[0053] Specifically, the encapsulation layer 90 can be made of an opaque insulating material, such as a black opaque encapsulating adhesive. The encapsulation layer 90 covers the backlight surface S2 of the light-emitting chip and exposes the first electrode 40 and the second electrode 50. This prevents the light-emitting chip from emitting light from the backlight surface S2 and isolates the first electrode 40 and the second electrode 50, reducing the probability of short circuits between them. Furthermore, the encapsulation layer 90 exposes the first electrode 40 and the second electrode 50, simplifying the electrical connection between them and the driving substrate.
[0054] This invention also provides a method for manufacturing a light-emitting chip. Figure 4 This is a schematic flowchart illustrating a method for fabricating a light-emitting chip according to an embodiment of the present invention. Figure 4 As shown, the method for manufacturing this light-emitting chip includes:
[0055] S110. Pattern the epitaxial layer of the light-emitting unit so that the epitaxial layer includes an etched surface;
[0056] Specifically, Figure 5 This is a schematic diagram of the structure of a light-emitting chip corresponding to step S110 provided in an embodiment of the present invention. For example... Figure 5 As shown, the light-emitting chip includes a first light-emitting unit 110 and a second light-emitting unit 120 stacked together. The first light-emitting unit 110 and the second light-emitting unit 120 each include a stacked ohmic contact layer 12 and an epitaxial layer 11. The ohmic contact layer 12 of each light-emitting unit 10 is adjacent to the first semiconductor layer 101 in the epitaxial layer 11. When patterning the epitaxial layer of the light-emitting unit, the electrode placement positions of the first light-emitting unit 110 and the second light-emitting unit 120 can be formed through a three-step etching process. Specifically, in the first etching process, the first light-emitting unit 110 and the second light-emitting unit 120 are etched, so that the ohmic contact layer 12 of the first light-emitting unit 110 has a first exposed surface S11. In the second etching process, the second light-emitting unit 120 is etched, so that the second semiconductor layer 103 of the first light-emitting unit 110 has a second exposed surface S12. During the third etching process, the second light-emitting unit 120 is etched, so that the ohmic contact layer 12 of the second light-emitting unit 120 has another first exposed surface S11. The multiple exposed surfaces and the surface of the second semiconductor layer 103 of the second light-emitting unit 120 constitute the etched surface. At this time, the etched surface has a high density of dislocations and non-radiative recombination centers.
[0057] S120, forming an atomic repair layer on the etching surface; the atomic repair layer at least partially covers the etching surface;
[0058] Specifically, Figure 6 A structure diagram of a light emitting chip corresponding to a step S120 provided by the embodiment of the present application is shown in FIG. 2. Figure 6 As shown in FIG. 2, after forming the etching surface, an atomic repair layer 20 is formed on the etching surface. At this time, the atomic repair layer 20 completely covers the etching surface.
[0059] S130, performing electron beam scanning on the atomic repair layer to make the atomic repair layer provide atoms for the etching surface.
[0060] Specifically, after forming the atomic repair layer 20, electron beam scanning is performed on the atomic repair layer 20 to make the atomic repair layer 20 provide atom diffusion to the epitaxial layer 11 to perform "hole repair", so as to improve the high-density dislocation and non-radiation recombination center phenomenon generated during etching of the epitaxial layer 11, reduce the phenomenon of electron leakage from the epitaxial layer 11 sidewall in the light emitting unit 10, improve the electron concentration in the light emitting unit 10, and further improve the photoelectric conversion efficiency of the light emitting unit 10, that is, improve the light emitting efficiency of the light emitting chip.
[0061] The technical scheme of the embodiment, after etching of the epitaxial layer of the light emitting unit, an atomic repair layer is formed on the etching surface, and electron beam scanning is performed on the atomic repair layer to make the atomic repair layer provide atoms for the etching surface, repair the holes in the epitaxial layer, that is, perform "hole repair" on the epitaxial layer, so as to improve the high-density dislocation and non-radiation recombination center phenomenon generated during etching of the epitaxial layer, reduce the phenomenon of electron leakage from the epitaxial layer sidewall in the light emitting unit, improve the electron concentration in the light emitting unit, and further improve the photoelectric conversion efficiency of the light emitting unit, that is, improve the light emitting efficiency of the light emitting chip.
[0062] In some embodiments, when the light emitting chip includes a light reflection layer, after performing electron beam scanning on the atomic repair layer to make the atomic repair layer provide atoms for the etching surface, the method further includes:
[0063] Forming a light reflection layer on a side of the atomic repair layer away from the epitaxial layer.
[0064] Specifically, Figure 7 A structure diagram of a light emitting chip corresponding to forming a light reflection layer provided by the embodiment of the present application is shown in FIG. 3. Figure 7 As shown in FIG. 3, a light reflection layer 30 is formed on a side of the atomic repair layer 20 away from the epitaxial layer 11, which can improve the light emitting efficiency of the light emitting chip.
[0065] After forming the light reflection layer, the atomic repair layer and the light reflection layer can be etched to expose the film layer to be connected to the electrode. Specifically, Figure 8A structure diagram of a light emitting chip corresponding to etching of an atomic repair layer and a light reflection layer is provided for an embodiment of the present application. As shown in Figure 8 The atomic repair layer 20 and the light reflection layer 30 are etched to expose part of the surface of the ohmic contact layer and the second semiconductor layer of the light emitting unit, so that the electrode is connected with the light emitting unit. For example, the atomic repair layer 20 and the light reflection layer 30 are etched to expose part of the surface of the ohmic contact layer 12 of the first light emitting unit 110 and the second light emitting unit 120, and part of the surface of the second semiconductor layer 103 of the first light emitting unit 110 and the second light emitting unit 120.
[0066] After etching of the atomic repair layer and the light reflection layer, the connecting electrode 60, the first part electrode 41 of the first electrode 40 and the second part electrode 51 of the second electrode 50 can be formed on the exposed surface of the first light emitting unit 110 and the second light emitting unit 120. For example, Figure 9 A structure diagram of a light emitting chip corresponding to formation of a part electrode is provided for an embodiment of the present application. As shown in Figure 9 The connecting electrode 60, the first part electrode 41 of the first electrode 40 and the second part electrode 51 of the second electrode 50 can be formed at the etching position of the atomic repair layer 20 and the light reflection layer 30, so that the connecting electrode 60, the first part electrode 41 of the first electrode 40 and the second part electrode 51 of the second electrode 50 fill the groove formed when the atomic repair layer 20 and the light reflection layer 30 are etched.
[0067] After the connecting electrode 60, the first part electrode 41 of the first electrode 40 and the second part electrode 51 of the second electrode 50 are formed on the exposed surface of the first light emitting unit 110 and the second light emitting unit 120, the packaging layer 90 can be formed on the back light side of the light emitting chip, and the first part electrode 41 of the first electrode 40 and the second part electrode 51 of the second electrode 50 are exposed. For example, Figure 10 A structure diagram of a light emitting chip corresponding to formation of a packaging layer is provided for an embodiment of the present application. As shown in Figure 10 The packaging layer 90 covers the connecting electrode 60 and the light reflection layer 30 on the back light side of the light emitting chip, and exposes the first part electrode 41 of the first electrode 40 and the second part electrode 51 of the second electrode 50.
[0068] Figure 11 A structure diagram of a light emitting chip corresponding to formation of a part electrode is provided for another embodiment of the present application. As shown in Figure 11As shown, after the encapsulation layer 90 is formed, the third part electrode 42 of the first electrode 40 and the fourth part electrode 52 of the second electrode 50 can be formed on the first part electrode 41 of the first electrode 40 and the second part electrode 51 of the second electrode 50. So that the first part electrode 41 and the third part electrode 42 constitute the first electrode 40, and the second part electrode 51 and the fourth part electrode 52 constitute the second electrode 50.
[0069] In some embodiments, the epitaxial layer is disposed on the substrate, the light emitting chip comprises a substrate and a first light emitting unit and a second light emitting unit which are disposed on the substrate in a stacked manner; before the epitaxial layer of the light emitting unit is patterned to make the epitaxial layer include an etching surface, the method further comprises:
[0070] bonding the first light emitting unit to the substrate;
[0071] Specifically, when the light emitting chip comprises a first light emitting unit and a second light emitting unit, before the epitaxial layer is patterned, two epitaxial wafers can be provided, each epitaxial wafer comprising a substrate and an epitaxial layer disposed on the substrate. The epitaxial layer can comprise a second semiconductor layer, a quantum well layer and a first semiconductor layer which are disposed on the substrate in a stacked manner. Then one of the epitaxial wafers is bonded to the substrate through a transparent bonding layer. The epitaxial layer on the epitaxial wafer can serve as the first light emitting unit, and the first semiconductor layer in the epitaxial layer is disposed adjacent to the substrate. The substrate is made of transparent material, which can ensure the light emitting efficiency of the light emitting chip when the light emitting chip uses the surface of the substrate side as the light emitting surface.
[0072] peeling off the substrate under the epitaxial layer of the first light emitting unit, and bonding the second light emitting unit to the first light emitting unit;
[0073] Specifically, after the first light emitting unit is bonded to the substrate, the substrate on the epitaxial wafer corresponding to the first light emitting unit is peeled off. Then the epitaxial wafer corresponding to the second light emitting unit is bonded to the side of the first light emitting unit away from the substrate through a transparent bonding material, so that the second light emitting unit and the first light emitting unit are disposed on the substrate in a stacked manner. At this time, the first semiconductor layer of the second light emitting unit is disposed adjacent to the second semiconductor layer of the first light emitting unit.
[0074] peeling off the substrate under the epitaxial layer of the second light emitting unit.
[0075] Specifically, after the second light emitting unit is bonded to the first light emitting unit, the substrate of the epitaxial wafer corresponding to the second light emitting unit is peeled off. For example, Figure 12 A structure schematic diagram of the light emitting chip after the substrate under the epitaxial layer of the second light emitting unit is peeled off is provided for the embodiments of the present application. As shown in Figure 12As shown, the first light emitting unit 110 is bonded on the substrate 00 through the transparent bonding layer 80, and the second light emitting unit 120 is bonded on the first light emitting unit 110 through the bonding layer 70, so that the first light emitting unit 110 and the second light emitting unit 120 are stacked on the substrate 00.
[0076] It should be noted that the above only describes the preferred embodiments of the present application and the principles of the applied technology. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and those skilled in the art can make various obvious changes, re-adjustments and substitutions without departing from the scope of the present application. Therefore, although the present application has been described in more detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the appended claims.
Claims
1. A light-emitting chip, characterized in that, It includes at least one light-emitting unit and an atomic repair layer; the light-emitting unit includes an epitaxial layer, the epitaxial layer includes an etched surface, and the atomic repair layer at least partially covers the etched surface; the atomic repair layer is used to provide atoms to the etched surface.
2. The light-emitting chip according to claim 1, characterized in that, The material of the atomic repair layer includes .
3. The light-emitting chip according to claim 1 or 2, characterized in that, The thickness of the atomic repair layer ranges from 3nm to 10nm.
4. The light-emitting chip according to claim 1, characterized in that, It also includes a light-reflecting layer, which is disposed on the side of the atomic repair layer away from the epitaxial layer, and the light-reflecting layer is used to reflect the light generated by the epitaxial layer.
5. The light-emitting chip according to claim 1, characterized in that, The light-emitting unit further includes an ohmic contact layer. The epitaxial layer includes a first semiconductor layer, a quantum well layer, and a second semiconductor layer stacked together. The ohmic contact layer is disposed on the side of the first semiconductor layer away from the quantum well layer. The ohmic contact layer has a first exposed surface, and the second semiconductor layer has a second exposed surface. The side surface of the first semiconductor layer, the side surface of the quantum well layer, the side surface of the second semiconductor layer, and at least a portion of the first exposed surface and at least a portion of the second exposed surface constitute the etched surface.
6. The light-emitting chip according to claim 5, characterized in that, It also includes a first electrode and a second electrode; one end of the first electrode is disposed on the first exposed surface, and the other end of the first electrode extends to the backlight surface of the light-emitting chip; one end of the second electrode is disposed on the second exposed surface, and the other end of the second electrode extends to the backlight surface of the light-emitting chip; wherein the backlight surface of the light-emitting chip is disposed opposite to the light-emitting surface of the light-emitting chip.
7. The light-emitting chip according to claim 6, characterized in that, The light-emitting chip includes a substrate and a first light-emitting unit and a second light-emitting unit stacked on the substrate; the light-emitting chip also includes a connecting electrode and a bonding layer; the connecting electrode is connected to the first electrode of the first light-emitting unit and the second electrode of the second light-emitting unit; the bonding layer is disposed between the first light-emitting unit and the second light-emitting unit, and the bonding layer is used to bond the first light-emitting unit and the second light-emitting unit.
8. The light-emitting chip according to claim 6, characterized in that, It also includes an encapsulation layer that at least partially covers the backlight surface and exposes the first electrode and the second electrode.
9. A method for manufacturing a light-emitting chip, characterized in that, include: The epitaxial layer of the light-emitting unit is patterned so that the epitaxial layer includes an etched surface; An atomic repair layer is formed on the etched surface; The atomic repair layer at least partially covers the etched surface; Electron beam scanning is performed on the atomic repair layer to provide atoms to the etched surface.
10. The method for manufacturing a light-emitting chip according to claim 9, characterized in that, The epitaxial layer is disposed on the substrate, and the light-emitting chip includes a substrate and a first light-emitting unit and a second light-emitting unit stacked on the substrate; Before patterning the epitaxial layer of the light-emitting unit to include etched surfaces, the process further includes: The first light-emitting unit is bonded to the substrate; The substrate under the epitaxial layer of the first light-emitting unit is peeled off, and the second light-emitting unit is bonded to the first light-emitting unit; The substrate under the epitaxial layer of the second light-emitting unit is peeled off.