High-orientation perovskite, preparation method and solar cell prepared by using high-orientation perovskite

Abstract

The invention belongs to the technical field of perovskite cells, and particularly discloses high-orientation perovskite, a preparation method and a solar cell prepared from the high-orientation perovskite, and the high-orientation perovskite comprises a mixture of naphthalene derivatives of sulfonic acid groups and amido, a perovskite component and a precursor solution, the mixture of naphthalene derivatives of sulfonic groups and amido is a mixture of potassium 6-hydroxy-2-naphthalene sulfonate and 6-bromo-2-naphthylamine hydrochloride, the molar mixing ratio of the potassium 6-hydroxy-2-naphthalene sulfonate to the 6-bromo-2-naphthylamine hydrochloride is 1: 0-1: 1, the perovskite component mainly comprises ABX3, and A is at least one of Cs, FA and MA; b is at least one of Pb and Sn; and X is I. According to the invention, crystal lattices are anchored through coordination of sulfonate radicals / hydroxyl radicals and Pbas, occupation of ammonium radicals on FAvacancies and the like, aromatic interaction among naphthalene rings in molecules is utilized to synergistically guide perovskite to orderly grow out of a (100) plane, inhibit lattice inclination and defect formation and regulate and control the orientation of perovskite crystals, so that the perovskite film with high orientation is obtained, and the perovskite film has good application prospects. And the photovoltaic performance of the perovskite solar cell is improved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of solar cells, and more particularly relates to a high-orientation perovskite, a preparation method and a solar cell prepared using the same. BACKGROUND

[0002] Perovskite solar cells have the advantages of high efficiency and low cost, and are a photovoltaic technology with great development potential. The core light-absorbing material of perovskite solar cells is an organic-inorganic hybrid metal halide perovskite. However, uncontrolled crystal nucleation, growth and crystallization in the perovskite thin film prepared by the solution method usually leads to disordered crystal orientation, thereby increasing the defect density and impairing the charge transport, further inhibiting the efficiency and stability of the perovskite solar cell. Therefore, it is crucial to adjust the nucleation and growth process in the preparation of perovskite to obtain a high-orientation perovskite thin film, for ultimately realizing a perovskite solar cell with high efficiency and stability.

[0003] The existing perovskite thin film prepared by the solution method generally has the problem of lack of molecular-scale regulation of the crystal nucleation and growth process, leading to disordered crystal orientation and increased defect density, and further causing reduced charge mobility and blocked carrier transport in the vertical direction, limiting the photoelectric conversion efficiency and long-term stability of the device. SUMMARY

[0004] In view of the above defects or improvement needs of the prior art, the present application provides a high-orientation perovskite, a preparation method and a solar cell prepared using the same. In the mixture of naphthalene derivatives with mixed sulfonic acid groups and amine groups, potassium 6-hydroxy-2-naphthalenesulfonate forms a strong coordination with Pb2+ in the perovskite through sulfonate and hydroxyl groups, effectively anchoring the perovskite lattice; at the same time, the ammonium radical in 6-bromo-2-naphthalenamine hydrochloride can occupy the formamidinium (FA+) vacancy, and the two cooperate to realize molecular-level regulation of crystal growth, thereby solving the technical problem of disordered orientation in the growth process of perovskite.

[0005] In order to achieve the above-mentioned purpose, according to the first aspect of the present application, a high-orientation perovskite is provided, which raw materials include: a mixture of naphthalene derivatives with mixed sulfonic acid groups and amine groups, a perovskite component and a precursor solution.

[0006] Further, the mixture of naphthalene derivatives with mixed sulfonic acid groups and amine groups is a mixture of potassium 6-hydroxy-2-naphthalenesulfonate and 6-bromo-2-naphthalenamine hydrochloride, and the molar mixing ratio of the two is 1:0~1:1.

[0007] Further, the perovskite component is mainly ABX3, wherein A is at least one of Cs, FA and MA; B is at least one of Pb and Sn; and X is I.

[0008] According to a second aspect of the present application, a method for preparing the high-orientation perovskite is provided, comprising: S100: mixing DMF and DMSO by volume ratio to prepare a mixed solvent, adding perovskite components into the mixed solvent, and stirring until completely dissolved to obtain a perovskite precursor solution; S200: dissolving potassium 6-hydroxy-2-naphthalenesulfonate and 6-bromo-2-naphthalenamine hydrochloride in DMSO, and then mixing the solution with the precursor solution to obtain a mixed solution of sulfonic acid group and amine group naphthalene derivatives; S300: coating the mixed solution obtained in S200 on a substrate by an anti-solvent method, and then annealing at 100℃ to obtain a high-orientation perovskite film.

[0009] Further, the anti-solvent comprises chlorobenzene and / or ethyl acetate.

[0010] Further, in S200, the content of the mixed solution of sulfonic acid group and amine group naphthalene derivatives is 0.5-1.5% relative to the molar percentage of perovskite components in the precursor solution.

[0011] Further, in S100, the volume ratio of DMF and DMSO is 5:1-3:1. The concentration of the perovskite components is 1-2 mol / L.

[0012] Further, in S400, the annealing time is 10-40 min.

[0013] According to a third aspect of the present application, a perovskite solar cell is provided, which is prepared by using the high-orientation perovskite and the method for preparing the high-orientation perovskite. The perovskite solar cell comprises, in sequence, a glass substrate, a transparent conductive oxide, a hole transport layer, an aluminum oxide layer, a high-orientation perovskite layer containing a mixed material of sulfonic acid group and amine group naphthalene derivatives, a passivation layer, an n-type semiconductor electron transport layer, a blocking layer, and an electrode layer.

[0014] Further, the glass substrate is a sodium-calcium-based or silicon-boron-based glass. The transparent conductive oxide is indium tin oxide or fluorine-doped tin oxide. The hole transport layer material is a phosphate-based self-assembled molecule, including at least one of (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, (2-(3,6-diphenyl-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl)phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(9H-carbazole-9-yl)ethyl)phosphonic acid, and (2-(9H-carbazole-9-yl)ethyl)phosphonic acid; The alumina layer is an alumina nanomaterial; The highly oriented perovskite layer of the mixture material containing naphthalene derivatives with mixed sulfonic acid groups and amino groups; The passivation layer is at least one of phenylethyl ammonium iodide, piperazine dihydroiodate, or ethylenediamine dihydroiodide; The n-type semiconductor electron transport layer material is at least one of C60 and its derivatives, and [6,6]-phenyl-C61-butyrate isomethyl ester; The barrier layer is a ketone compound or tin oxide; The electrode layer is a metal electrode, including at least one of gold, silver, copper, bismuth and chromium.

[0015] In summary, compared with the prior art, the above-described technical solutions conceived by this invention can achieve the following beneficial effects: 1. The highly oriented perovskite of the present invention utilizes a mixture of naphthalene derivatives containing mixed sulfonic acid and amino groups, wherein potassium 6-hydroxy-2-naphthalenesulfonate reacts with Pb in the perovskite via sulfonate and hydroxyl groups. 2+ This forms a strong coordination interaction, effectively anchoring the perovskite lattice; simultaneously, the ammonium ions in 6-bromo-2-naphthylamine hydrochloride can occupy formamidinium (FA) + The two vacancies work together to achieve molecular-level control over crystal growth, enabling synergistic molecular control and lattice anchoring.

[0016] 2. The highly oriented perovskite of the present invention can generate an ordered structure through aromatic stacking between the naphthalene rings at the ends of the two naphthyl salts. This structure has good compatibility with the perovskite lattice and can guide the grain orientation during crystal growth, significantly suppressing lattice tilt and defect formation, thereby obtaining a highly oriented perovskite film that can enhance crystal orientation and suppress lattice tilt.

[0017] 3. The highly oriented perovskite of the present invention has a lower nonradiative recombination rate and a higher charge transport capability, which can significantly improve the photoelectric conversion efficiency of perovskite solar cells; at the same time, the highly ordered crystal structure enhances the material's resistance to environmental factors such as humidity and thermal stress, thereby significantly improving the long-term stability of the device and enhancing the device's photoelectric performance and operational stability. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. The comparative examples in the figures refer to the results of mixtures of corresponding naphthalene derivatives without the addition of sulfonic acid groups and amino groups.

[0019] Figure 1 This is a schematic diagram of the perovskite solar cell in Embodiment 3 of the present invention; Figure 2 An optimized model for the first-principles calculation of the molecular interactions between perovskite and naphthalene derivatives with sulfonic acid and amino groups, provided for Test Example 1 of the present invention; Figure 3 The optimized model for the first-principles calculation of the molecular interactions between perovskite and a mixture of (a) DMSO and (b) naphthalene derivatives with sulfonic acid and amino groups, provided for Test Example 1 of the present invention, is based on the following reference lattice parameters of a 2×2×2 FAPbI3 unit cell: a=12.91Å, b=12.64Å, c=12.62Å, angles α=90°, β=90° and γ=90°. The figure shows the variation values ​​of these reference lattice parameters. Figure 4 The GIWAXS patterns and corresponding azimuth integral results of the perovskite thin films provided in Embodiments 1, 2 and the comparative examples of the present invention; Figure 5 The perovskite solar cell provided in Embodiment 3 of the present invention J-V Test results; Figure 6 The photovoltaic parameter statistics of 20 devices of the perovskite solar cell provided in Example 3 of the present invention are presented. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0021] Example 1: The embodiment provides a high-orientation perovskite, raw materials of which include: a mixture of naphthalene derivatives with sulfonic acid groups and amine groups, a perovskite component and a precursor solution. The mixture of naphthalene derivatives with sulfonic acid groups and amine groups is a mixture of potassium 6-hydroxy-2-naphthalenesulfonate and 6-bromo-2-naphthalenamine hydrochloride, and the molar mixing ratio of the two is 1:0-1:1. The perovskite component is mainly ABX3, wherein A is at least one of Cs, FA and MA; B is at least one of Pb and Sn; and X is I.

[0022] Embodiment 2 The embodiment provides a preparation method of a high-orientation perovskite regulated by a mixture of naphthalene derivatives with sulfonic acid groups and amine groups.

[0023] The specific implementation is that a perovskite film is prepared by using a one-step anti-solvent method, and the specific steps are as follows: S100: DMF and DMSO are mixed in a fixed volume ratio to prepare a mixed solvent, the perovskite component is added into the mixed solvent at a concentration of 1.0-2.0 mol / L, and stirring is performed until complete dissolution, so as to obtain a perovskite precursor solution.

[0024] S110: for a FA 0.95 Cs 0.05 PbI3 component perovskite, DMF and DMSO are mixed in a volume ratio of 5:1 to prepare a mixed solvent, the perovskite component is added into 1 ml of the mixed solvent at a concentration of 1.5 mol / L (1.53 mmol of PbI2, 1.425 mmol of FAI, 0.075 mmol of Csl and 0.075 mmol of MACl are weighed), and stirring is performed until complete dissolution, so as to obtain a perovskite precursor solution.

[0025] S120: for a FA 0.8 Cs 0.2 Sn 0.5 Pb 0.5 I3 component perovskite, DMF and DMSO are mixed in a volume ratio of 3:1 to prepare a mixed solvent, the perovskite component is added into 1 ml of the mixed solvent at a concentration of 1.8 mol / L (0.9 mmol of PbI2, 0.9 mmol of SnI2, 1.44 mmol of FAI, 0.36 mmol of Csl, 0.09 mmol of SnF2 and 0.018 mmol of GuaSCN are weighed), and stirring is performed until complete dissolution, so as to obtain a perovskite precursor solution.

[0026] S200: potassium 6-hydroxy-2-naphthalenesulfonate and 6-bromo-2-naphthalenamine hydrochloride are dissolved in DMSO at a molar ratio of 1:1, and then the solution is mixed into the perovskite precursor at a molar percentage of 1% relative to the perovskite component in the precursor solution, and stirring is uniformly performed.

[0027] S300: The mixed solution obtained in S200 is coated onto the substrate using an anti-solvent spin-coating process. S310: For FA 0.95 Cs 0.05 PbI3 was used to prepare perovskite. A perovskite precursor solution was spin-coated on a substrate at 4000 rpm for 50 s using a spin coater. Chlorobenzene was then dropped onto the substrate in the last 20 s to obtain a wet perovskite film. This wet film was then annealed at 100℃ for 30 min to obtain highly oriented FA. 0.95 Cs 0.05 PbI3 composition perovskite thin film; S320: For FA 0.8 Cs 0.2 Sn 0.5 Pb 0.5 I3-component perovskite was used. The perovskite precursor solution was continuously rotated on a substrate at 1000 rpm for 10 s followed by 4000 rpm for 50 s using a spin coater. Chlorobenzene was dropped onto the substrate 20 s before the end of the spin coat to obtain a wet perovskite film. This wet perovskite film was then annealed at 100°C for 10 min to obtain highly oriented FA. 0.8 Cs 0.2 Sn 0.5 Pb 0.5 I3 composition perovskite thin film.

[0028] The antisolvent contains at least one of chlorobenzene and ethyl acetate.

[0029] S400: Place the obtained perovskite wet film on a heating stage and anneal it at 100°C. S410: For FA 0.95 Cs 0.05 PbI3 perovskite was used to anneal the perovskite wet film on a hot plate at 100°C for 30 minutes to obtain highly oriented FA. 0.95 Cs 0.05 PbI3 composition perovskite thin film; S420: For FA 0.8 Cs 0.2 Sn 0.5 Pb 0.5 I3 composition perovskite, high orientation FA obtained by annealing the perovskite wet film on a 100℃ hot stage for 10 min. 0.8 Cs 0.2 Sn 0.5 Pb 0.5 I3 composition perovskite thin film.

[0030] The ammonium group of 6-bromo-2-naphthylamine hydrochloride occupies the FA group. + The site, while the sulfonic acid group and hydroxyl group of potassium 6-hydroxy-2-naphthalenesulfonate are related to Pb 2+ Ion coordination, with the naphthyl moiety of both naphthyl salt molecules located in [PbI6]. 4− A dense aromatic packing forms near the octahedron. This specific structure formed by good compatibility restricts crystal tilting during perovskite growth, enabling ordered out-of-plane crystallization of the perovskite film along the (100) plane and improving carrier transport, thereby enhancing the efficiency and stability of perovskite solar cells.

[0031] Example 3: This embodiment is based on Example 2, the difference being that in S200, potassium 6-hydroxy-2-naphthalenesulfonate and 6-bromo-2-naphthylamine hydrochloride are dissolved in DMSO at a molar ratio of 1:0. This solution is then mixed into the perovskite precursor at a molar percentage of 1% relative to the perovskite component in the precursor solution and stirred until homogeneous. Example 2 effectively explored the key parameter of the ratio (1:0 to 1:1) of potassium 6-hydroxy-2-naphthalenesulfonate to 6-bromo-2-naphthylamine hydrochloride.

[0032] Example 4: Please see Figure 1 This embodiment provides a perovskite solar cell based on Embodiments 2 and 3.

[0033] Please see Figure 1 The perovskite solar cell consists of, from bottom to top, a glass substrate, a transparent conductive oxide, a hole transport layer, an alumina layer, a highly oriented perovskite material composed of a mixture of naphthalene derivatives containing sulfonic acid and amino groups, a passivation layer, an n-type semiconductor electron transport layer, a barrier layer, and an electrode layer.

[0034] Furthermore, the glass substrate and the transparent conductive oxide are transparent conductive ITO substrates.

[0035] Further, the hole transport layer was prepared as follows: 0.5 mg of [4-(7H-dibenzocarbazole-7-yl)butyl]phosphoric acid was added to 1 ml of ethanol and stirred thoroughly to obtain a hole transport material solution. The solution was then spin-coated onto the surface of an ITO substrate and subsequently annealed on a hot plate at 100°C for 10 min to obtain the hole transport layer.

[0036] Furthermore, the alumina layer preparation process is as follows: alumina nanomaterials are added to isopropanol to obtain an alumina nanomaterial solution, which is then spin-coated onto the hole transport layer to obtain the alumina layer. Furthermore, the preparation process of the highly oriented perovskite layer of the mixture of naphthalene derivatives containing sulfonic acid groups and amino groups is the same as that in Examples 1 and 2. 0.95 Cs 0.05The preparation process for PbI3-based perovskites is the same.

[0037] Furthermore, the passivation layer material preparation process is as follows: piperazine dihydroiodate is added to isopropanol and stirred thoroughly to obtain a passivation layer material solution, which is then spin-coated onto the surface of the perovskite layer and subsequently annealed on a hot plate at 100°C for 5 minutes to obtain the passivation layer.

[0038] Furthermore, the preparation process of the n-type semiconductor electron transport layer is as follows: 20 mg of PCBM is added to chlorobenzene and stirred thoroughly to obtain an electron transport layer material solution, which is then spin-coated onto the surface of the passivation layer and subsequently annealed on a hot plate at 70°C for 10 minutes to obtain the n-type semiconductor electron transport layer.

[0039] Furthermore, the barrier layer preparation process is as follows: Add ketone to isopropanol, stir thoroughly to obtain a supersaturated barrier layer material solution, spin-coat it onto the surface of the electron transport layer, and then anneal it on a hot plate at 70°C for 10 minutes to obtain the barrier layer.

[0040] Furthermore, the metal electrode layer is prepared as follows: a 120-nanometer-thick layer of silver is deposited on the surface of the barrier layer in a vacuum evaporation coating system to obtain the metal electrode layer.

[0041] Comparative Example 1 This comparative example is used to verify the key role of the mixture of sulfonic acid and amino naphthalene derivatives as additives. It is based on Examples 2 and 4, except that no mixture of sulfonic acid and amino naphthalene derivatives is added to the precursor solution. The film formation and annealing processes are exactly the same as in Example 2, and the device fabrication process is exactly the same as in Example 4.

[0042] Test Example 1: Please see Figure 2 and Figure 3 This test example provides a technical solution based on Example 2: first-principles calculation of the interaction mechanism between perovskite and naphthalene derivatives of sulfonic acid and amino groups.

[0043] Theoretical calculations reveal the mechanism of interaction between a mixture of sulfonic acid and amino naphthalene derivatives and perovskite, as well as the mechanism governing the orientation of perovskite films. Please refer to [link to relevant documentation]. Figure 2 Potassium 6-hydroxy-2-naphthalenesulfonate reacts with Pb in the perovskite lattice. 2+ Ion interactions occur, with 6-bromo-2-naphthylamine hydrochloride occupying two adjacent Pb atoms in the perovskite lattice. 2+ FA between ions + At the sites, the naphthalene groups in potassium 6-hydroxy-2-naphthalenesulfonate and 6-bromo-2-naphthylamine hydrochloride exhibit an average planar distance of approximately 3.6 Å.

[0044] This favorable compatibility results in a specific structure that limits crystal tilt during perovskite growth. (See also...) Figure 3 The optimized structure of perovskite interacting with DMSO exhibits a disordered DMSO structure with lattice tilt, indicating that it is inherently unable to induce well-arranged perovskite grains. However, in the system where perovskite is combined with a mixture of naphthalene derivatives with sulfonic acid and amino groups, the lattice tilt in the optimized structure is restricted, which is conducive to achieving ordered out-of-plane crystallization of perovskite films along the (100) plane.

[0045] Test Example 2: Please see Figure 4 This test example provides the orientation detection of perovskite films containing a mixture of naphthalene derivative molecules with sulfonic acid and amino groups, based on Examples 2, 3 and the comparative examples.

[0046] Grazing incidence wide-angle X-ray scattering (GIWAXS) characterization of perovskite thin films: The orientation of the perovskite thin film was characterized using the GIWAXS test. Please refer to [link / reference]. Figure 4 a and b, the azimuth integrals of the untreated perovskite film (100) plane exhibit uniform intensity, indicating its random crystalline arrangement; see also Figure 4 In contrast, the perovskite films modified by a mixture of sulfonic acid and amino naphthalene derivatives in 1:0 and 1:1 ratios exhibit a prominent peak at 90° azimuth angle, indicating a greater out-of-plane orientation at the (100) plane at the two ratio boundaries of 1:0 and 1:1.

[0047] Test Example 3: Please see Figure 5 and Figure 6 This test case provides device efficiency testing for perovskite solar cells based on Examples 2, 3, and the comparative example.

[0048] The device prepared in Example 2 was subjected to current density-voltage (ND-V) analysis. J-V ) test to obtain open circuit voltage ( V OC ), short-circuit current density ( J SC Photovoltaic parameters such as fill factor (FF) and power conversion efficiency (PCE) are shown in Table 1. For statistical results, please refer to [link to relevant documentation]. Figure 6 .

[0049] Please see Figure 5 As shown in Table 1, compared to the 24.82% PCE of the untreated device, devices fabricated from highly oriented perovskite films regulated by a mixture of sulfonic acid and amino naphthalene derivatives in ratios of 1:0 and 1:1 achieved PCEs of 25.91% and 27.02%, respectively.V OC , J SC The simultaneous improvement of the three parameters (FF) indicates that the molecular material using the mixture of naphthalene derivatives with sulfonic acid and amino groups described in this application can significantly improve the photovoltaic performance of perovskite solar cells.

[0050] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A highly oriented perovskite, characterized in that, Its raw materials include: a mixture of naphthalene derivatives with sulfonic acid and amino groups, perovskite components, and precursor solutions.

2. The highly oriented perovskite according to claim 1, characterized in that, The mixture of the sulfonic acid group and the amino group of the naphthalene derivative is a mixture of potassium 6-hydroxy-2-naphthalenesulfonate and 6-bromo-2-naphthylamine hydrochloride, and the molar mixing ratio of the two is 1:0 to 1:

1.

3. The highly oriented perovskite according to claim 2, characterized in that, The perovskite component is mainly ABX3, wherein A is at least one of Cs, FA, and MA; B is at least one of Pb and Sn; and X is I.

4. A method for preparing highly oriented perovskite as described in any one of claims 1-3, characterized in that, include: S100: DMF and DMSO are mixed in a volume ratio to prepare a mixed solvent. The perovskite component is added to the mixed solvent and stirred until completely dissolved to obtain a perovskite precursor solution. S200: Dissolve potassium 6-hydroxy-2-naphthalenesulfonate and 6-bromo-2-naphthylamine hydrochloride in DMSO, then mix the solution with the precursor solution and stir until homogeneous to obtain a mixed solution of naphthalene derivatives with sulfonic acid and amino groups. S300: The mixed solution obtained in S200 is coated onto the substrate using an anti-solvent method, and then annealed at 100°C: the perovskite film is annealed to finally obtain a highly oriented perovskite film.

5. The method for preparing highly oriented perovskite according to claim 4, characterized in that, The antisolvent comprises chlorobenzene and / or ethyl acetate.

6. The method for preparing a highly oriented perovskite according to claim 5, characterized in that, In S200, the content of the mixture of sulfonic acid group and amino group naphthalene derivatives is 0.5~1.5% relative to the molar percentage of the perovskite component in the precursor solution.

7. A method for preparing a highly oriented perovskite according to claim 6, characterized in that, In S100, the volume ratio of DMF to DMSO is 5:1 to 3:1; The concentration of the perovskite component is 1-2 mol / L.

8. A method for preparing highly oriented perovskite according to claim 7, characterized in that, In S400, the annealing time is 10~40min during the annealing process.

9. A perovskite solar cell, characterized in that, It is prepared by applying the highly oriented perovskite according to any one of claims 1-3 and the method for preparing a highly oriented perovskite according to any one of claims 4-8; It comprises, in sequence, a glass substrate, a transparent conductive oxide, a hole transport layer, an alumina layer, a highly oriented perovskite layer containing a mixture of naphthalene derivatives with mixed sulfonic acid and amino groups, a passivation layer, an n-type semiconductor electron transport layer, a barrier layer, and an electrode layer.

10. A perovskite solar cell according to claim 9, characterized in that, The glass substrate is sodium-calcium-based or borosilicate-based glass; The transparent conductive oxide is indium tin oxide or fluorine-doped tin oxide; The hole transport layer material is a phosphate-based self-assembled molecule, including at least one of (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, (2-(3,6-diphenyl-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl)phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(9H-carbazole-9-yl)ethyl)phosphonic acid, and (2-(9H-carbazole-9-yl)ethyl)phosphonic acid; The alumina layer is an alumina nanomaterial; The highly oriented perovskite layer of the mixture material containing naphthalene derivatives with mixed sulfonic acid groups and amino groups; The passivation layer is at least one of phenylethyl ammonium iodide, piperazine dihydroiodate, or ethylenediamine dihydroiodide; The n-type semiconductor electron transport layer material is at least one of C60 and its derivatives, and [6,6]-phenyl-C61-butyrate isomethyl ester; The barrier layer is a ketone compound or tin oxide; The electrode layer is a metal electrode, including at least one of gold, silver, copper, bismuth and chromium.

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