A double wire cutting tool and method for a 12 inch silicon carbide cutting blade
By using a dual-wire cutting fixture and parallel diamond wire cutting technology, the problems of inaccurate thickness control and low efficiency of silicon carbide cutting wafers have been solved, enabling efficient cutting and quality assessment of large-size silicon carbide wafers.
CN121340480BActive Publication Date: 2026-06-09SHANDONG UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANDONG UNIV
- Filing Date
- 2025-12-02
- Publication Date
- 2026-06-09
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Figure CN121340480B_ABST
Abstract
The application discloses a double-wire cutting tool and method for 12-inch silicon carbide cutting pieces, and solves the problem that the cutting device in the prior art is not suitable for cutting 12-inch silicon carbide cutting pieces, and has the beneficial effects of ensuring cutting quality and being suitable for obtaining 12-inch silicon carbide cutting pieces, and the specific scheme is as follows: a double-wire cutting tool for 12-inch silicon carbide cutting pieces comprises two cutting wheels, the two cutting wheels are arranged at a distance, at least two wire grooves are arranged on each cutting wheel in a ring shape, two diamond wires pass through the wire grooves of the two cutting wheels and are arranged around the two cutting wheels to form two mutually parallel diamond wires; a connecting and fixing member is detachably connected with a wafer disc, a silicon carbide wafer is bonded to an end surface of the wafer disc, a silicon carbide crystal is bonded to the end surface of the wafer disc and the silicon carbide wafer, the diameter of the silicon carbide wafer is smaller than that of the silicon carbide crystal to avoid cracking of the silicon carbide crystal, and the distance between the two cutting wheels is greater than the diameter of the wafer disc.
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