Circuit board and semiconductor package including same

Abstract

A circuit board according to an embodiment includes a lamination structure; a connecting member provided on the laminated structure; a molding member disposed on the laminated structure and surrounding a side portion of the connecting member; and a conductive bonding portion penetrating the molding member, in which the connecting member includes a through electrode penetrating at least a portion of the connecting member in a vertical direction, a thickness of the conductive bonding portion in the vertical direction is greater than a thickness of the through electrode in the vertical direction, and a height of the conductive bonding portion is greater than a height of the connecting member.

Description

TECHNICAL FIELD

[0001] Embodiments relate to a circuit board and a semiconductor package including the same. BACKGROUND

[0002] As the performance of electrical / electronic products advances, technologies for providing a greater number of packages on a circuit board substrate of limited size are being proposed and researched.

[0003] A typical semiconductor package is composed of a plurality of chips provided in a single package. Recently, due to the advancement of product specifications and the adoption of numerous semiconductor devices such as a high bandwidth memory (HBM), the size of the semiconductor package has increased. Accordingly, the semiconductor package includes an interposer for connecting a plurality of semiconductor devices.

[0004] In addition, due to the trend of high integration, semiconductor packages used in products for providing the Internet of Things (IOT), autonomous driving vehicles, and high-performance servers require high performance and reliability. Here, high performance can mean that signal transmission can be performed at high speed, and the allowable current of a transmittable signal is high. In addition, high reliability includes high bonding force between each component constituting the semiconductor package.

[0005] Meanwhile, the semiconductor package includes a circuit board and semiconductor devices mounted on the circuit board. The semiconductor devices can have a vertically stacked structure and can be provided in multiples. To this end, the circuit board can include a pad and a conductive bonding part.

[0006] A connection member can be provided on the pad of the circuit board, and a plurality of semiconductor devices can be provided on the conductive bonding part and the connection member of the circuit board.

[0007] The semiconductor package includes a molding member provided between the circuit board and the plurality of semiconductor devices and molding the conductive bonding part.

[0008] However, in the semiconductor package according to the related art, stress caused by expansion and / or contraction due to thermal cycles can be continuously transmitted to the molding member, causing a problem of a decrease in adhesion between the molding member and the circuit board. Accordingly, the semiconductor package according to the related art can have a physical reliability problem in which the molding member is peeled off from the circuit board, and thus there is a problem that the conductive bonding part cannot be stably protected.

[0009] In particular, the conductive bonding part can serve as a power supply line for supplying power and / or electricity to the plurality of semiconductor devices. At this time, due to the high performance and high reliability of the semiconductor package recently, the magnitude of the power and / or electricity provided through the conductive bonding part also increases.

[0010] According to the related art, the conductive joint can not be stably protected by the molding member, and thus physical reliability and / or electrical reliability of the conductive joint can be decreased, and further, a problem that the plurality of semiconductor devices connected to the conductive joint can not stably operate can occur. SUMMARY

[0011] TECHNICAL PROBLEM

[0012] Embodiments provide a semiconductor package having a new structure.

[0013] In addition, embodiments provide a semiconductor package capable of improving adhesion between a circuit board and a molding member.

[0014] In addition, embodiments provide a semiconductor package capable of effectively dispersing and / or mitigating stress caused by expansion and / or contraction due to thermal cycles.

[0015] In addition, embodiments provide a semiconductor package capable of improving operating characteristics of semiconductor devices.

[0016] The technical problems addressed by the proposed embodiments are not limited to the above technical problems, and other technical problems not mentioned can be clearly understood by those skilled in the art to which the embodiments proposed from the following description belong.

[0017] TECHNICAL SOLUTION

[0018] The circuit board according to an embodiment includes a build-up structure; a connection member disposed on the build-up structure; a molding member disposed on the build-up structure and surrounding a side portion of the connection member; and a conductive joint penetrating the molding member, wherein the connection member includes a through electrode penetrating at least a portion of the connection member in a vertical direction, wherein a thickness of the conductive joint in the vertical direction is greater than a thickness of the through electrode in the vertical direction, and wherein a height of the conductive joint is greater than a height of the connection member.

[0019] In addition, the build-up structure includes a build-up insulating layer stacked in a vertical direction, a pad portion disposed on the build-up insulating layer, and a protection layer disposed on the build-up insulating layer and including an opening portion overlapping the pad portion in the vertical direction.

[0020] In addition, a sidewall of the protection layer forming the opening portion has a step, and wherein the molding member contacts at least a portion of the step of the sidewall of the protection layer.

[0021] In addition, the sidewall of the protection layer having the step is disposed along a circumferential direction of an outer side surface of the connection member.

[0022] In addition, the sidewall of the protection layer includes a first portion adjacent to a lower surface of the protection layer; and a second portion disposed on the first portion and having a step from the first portion.

[0023] In addition, at least one of the first portion and the second portion has a curved surface.

[0024] In addition, a width of the opening portion of the protective layer in the horizontal direction in the first portion is greater than a width in the horizontal direction in the second portion.

[0025] In addition, a width of the opening portion of the protective layer in the horizontal direction in the first portion is less than a width in the horizontal direction in the second portion.

[0026] In addition, the molding member overlaps at least a portion of the opening portion of the protective layer in the vertical direction, and contacts each of the first portion and the second portion of the side wall.

[0027] In addition, the molding member does not overlap the opening portion of the protective layer in the vertical direction and contacts a portion of the second portion of the side wall.

[0028] In addition, the conductive joint includes a first through portion that passes through the protective layer of the laminate structure; and a second through portion that passes through the molding member.

[0029] In addition, a width of the first through portion in the horizontal direction is different from a width of the second through portion in the horizontal direction.

[0030] In addition, an outer side surface of the protective layer has a step from an outer side surface of the insulating layer.

[0031] In addition, the molding member is provided to cover an outer side surface of the protective layer, the outer side surface having a step from an outer side surface of the insulating layer.

[0032] In addition, an outer side surface of the protective layer includes a first portion having a step from an outer side surface of the insulating layer; and a second portion having a step from the outer side surface of the insulating layer and the first portion, and the molding member contacts the first portion and the second portion.

[0033] Meanwhile, a semiconductor package according to an embodiment includes a circuit board and a plurality of semiconductor devices disposed on the circuit board, wherein the plurality of semiconductor devices are disposed on a conductive joint and a connection member of the circuit board, while being spaced apart in a horizontal direction.

[0034] In addition, the semiconductor package further includes a first connection portion disposed between the conductive joint and the plurality of semiconductor devices; and a second connection portion disposed between the connection member and the plurality of semiconductor devices.

[0035] Meanwhile, the circuit board according to an embodiment includes a build-up structure including an insulating layer and a protective layer disposed on the insulating layer, a molding member disposed on the build-up structure, and a conductive joint disposed on the insulating layer and penetrating the molding member disposed on the build-up structure, wherein an outer side surface of the protective layer has a step with respect to an outer side surface of the insulating layer, and the molding member is disposed to cover the outer side surface of the protective layer.

[0036] In addition, the outer side surface of the protective layer includes a first portion having a step with respect to the outer side surface of the insulating layer, and a second portion having a step with respect to the outer side surface of the insulating layer and the first portion, and the molding member is in contact with the first portion and the second portion.

[0037] In addition, the circuit board further includes a connection member disposed on the insulating layer, the protective layer includes an opening portion overlapping the connection member in a vertical direction, a side wall of the opening portion of the protective layer has a step, and the molding member is in contact with the side wall of the opening portion having the step.

[0038] Meanwhile, the semiconductor package according to an embodiment includes a plurality of semiconductor devices disposed on the conductive joint and the connection member, wherein each of the plurality of semiconductor devices includes a first set of terminals connected to the conductive joint and a second set of terminals connected to the connection member, and the first set of terminals includes a power or power supply terminal.

[0039] Advantageous Effects

[0040] The semiconductor package of an embodiment includes a circuit board. The circuit board can include an insulating layer, a protective layer, and a molding member. The protective layer can include an opening portion overlapping a connection member in a vertical direction. A side wall of the opening portion of the protective layer overlapping the connection member in the vertical direction can have a step. In addition, the molding member can be disposed on the protective layer and can be in contact with the step of the side wall of the opening portion of the protective layer.

[0041] Accordingly, an embodiment can increase a contact area between the molding member and the protective layer. Accordingly, an embodiment can improve a bonding strength between the molding member and the protective layer, thereby securing that the molding member is firmly bonded to the protective layer.

[0042] In this case, the conductive junction is disposed on the insulating layer and penetrates the protective layer and the molding member. Also, the molding member can mold the conductive junction. For example, the molding member can be disposed on an outer region of the upper portion of the circuit board, thereby molding the conductive junction. At this time, the molding member can contact a step of the sidewall of the protective layer, thereby molding the conductive junction while being firmly joined to the protective layer. Accordingly, the embodiments can more stably protect the conductive junction by the molding member, thereby enabling the semiconductor device connected to the conductive junction to more stably operate. For example, the embodiments can use the conductive junction to implement stable power and / or power supply to the semiconductor device, thereby improving operational reliability of the semiconductor device.

[0043] Also, the molding member can be disposed to completely cover the sidewall of the opening portion of the protective layer. This allows the molding member to not only mold the conductive junction but also mold the sidewall of the protective layer. For example, the molding member can mold the conductive junction while firmly coupling and fixing the protective layer to the insulating layer. Accordingly, the embodiments can minimize stress transfer to the conductive junction due to thermal cycles caused by expansion and / or contraction of the protective layer, thereby further improving physical and / or electrical reliability of the semiconductor package.

[0044] Also, the sidewall of the opening portion of the protective layer having the step can have a curved surface. If the sidewall of the opening portion of the protective layer has a curved surface, stress caused by expansion and / or contraction of the protective layer due to thermal cycles can be minimized, thereby further improving physical and / or electrical reliability of the semiconductor package. For example, if the sidewall of the opening portion is a straight line, an edge portion where different slopes meet is curved at an angle close to a right angle, as a result, there can be a problem that stress generated during operation of the semiconductor device or heat applied during a process is concentrated in the curved edge portion. In contrast, if the sidewall of the opening portion of the protective layer has a curved surface, stress can be prevented from being concentrated at the edge portion, and further, stress can be uniformly distributed in the entire region of the sidewall of the opening portion. This can further improve physical and / or electrical reliability of the semiconductor package, thereby enabling more stable operation of a product such as a server.

[0045] Furthermore, the sidewalls of the opening portion of the protective layer can have steps, thereby improving the physical reliability of the protective layer. For example, the protective layer may expand and / or contract due to thermal cycling. In this case, warping of the protective layer due to thermal cycling caused by expansion and / or contraction may occur, which could lead to physical reliability problems such as the protective layer peeling off from the insulating layer. In an embodiment, the sidewalls of the opening portion of the protective layer have steps comprising a first portion and a second portion. In this case, the surface area of ​​the sidewall with steps can be larger than the surface area of ​​the sidewall without steps. In this case, when the surface area of ​​the sidewall is large, the flow range of the protective layer can be further increased during expansion and / or contraction, thereby minimizing the thermal deformation of the protective layer due to expansion and / or contraction. Therefore, the embodiment can solve the physical reliability problem of the protective layer peeling off from the insulating layer, thereby ensuring stable protection of the insulating layer and the electrode portion by the protective layer.

[0046] Furthermore, the outer surfaces of the insulating layer and the protective layer may have steps. These stepped outer surfaces of the insulating layer and the protective layer can also contact the molding member. This allows for an increase in the contact area between the molding member and the protective layer. Therefore, the embodiments can allow for more reliable protection of conductive junctions by the molding member, thereby further improving the physical and / or electrical reliability of the semiconductor package.

[0047] Furthermore, embodiments may position the outer surface of the protective layer further inward than the outer surface of the insulating layer, thereby preventing warping of the semiconductor package that may occur due to the difference in the coefficients of thermal expansion between the insulating and protective layers.

[0048] Furthermore, the molding member can contact the outer surface of the protective layer, which has a stepped outer surface with the insulating layer, and simultaneously contact the sidewall of the opening portion of the stepped protective layer. Therefore, the embodiment can more firmly secure the protective layer using the molding member and can minimize deformation of the protective layer due to expansion and / or contraction caused by thermal cycling. Thus, the embodiment can allow for more stable coupling of the conductive joints. Attached Figure Description

[0049] Figure 1 This is a cross-sectional view showing a semiconductor package according to the first embodiment.

[0050] Figure 2 yes Figure 1 Enlarged cross-sectional view of region R1.

[0051] Figure 3 It is shown Figure 1 A plan view of the first protective layer and the molded components.

[0052] Figure 4 and Figure 5 It shows the settingFigure 1 Cross-sectional view of the opening portion in the first protective layer of various embodiments of the application.

[0053] Figure 6 Enlarged cross-sectional view of the region R1 of Figure 1

[0054] Figure 7 Cross-sectional view illustrating a semiconductor package according to a third embodiment.

[0055] Figure 8 Cross-sectional view illustrating a semiconductor package according to a fourth embodiment.

[0056] Figure 9 Enlarged cross-sectional view of the region R1 of Figure 8

[0057] Figure 10 Cross-sectional view illustrating a semiconductor package according to a fifth embodiment.

[0058] Figure 11 Enlarged cross-sectional view of the region R1 of Figure 10

[0059] Plan view illustrating the first protective layer and the molding member of Figure 12 Figure 10

[0060] Figure 13 Cross-sectional view illustrating a semiconductor package according to a sixth embodiment. DETAILED DESCRIPTION

[0061] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, the spirit and scope of the present disclosure are not limited to a part of the described embodiments, and can be implemented in various other forms, and one or more of the elements of the embodiments can be selectively combined and re-arranged within the spirit and scope of the present disclosure.

[0062] Further, unless explicitly defined and described otherwise, the terms used in the embodiments of the present disclosure, including technical and scientific terms, can be interpreted the same as the meanings that an ordinary person skilled in the art to which the present disclosure belongs and is commonly used, and terms such as defined in a generally used dictionary can be interpreted as having meanings consistent with the meanings in the context of related art.

[0063] In addition, the terms used in the embodiments of the present disclosure are used to describe the embodiments, and are not intended to limit the present disclosure. In the present specification, the singular form can also include the plural form unless specifically stated and described otherwise in the phrase, and when described in "at least one of A (and), B, and C" can include at least one of all combinations that can be combined with A, B, and C.​​​​

[0064] Also, the terms such as first, second, A, B, (a), and (b) can be used in describing elements of the embodiments of the disclosure. The terms are used only to distinguish one element from another element, and the terms do not limit the nature, sequence, or order of the elements.

[0065] Also, when an element is described as being "connected", "coupled", or "contacted" with another element, it can also include a case where the element is not only directly "connected", "coupled", or "contacted" with the other element, but also "connected", "coupled", or "contacted" with the other element through another element.

[0066] Also, when described as being formed or disposed "on" or "under" each element, "on" or "under" can not only include a case where two elements are directly connected to each other, but also include a case where one or more other elements are formed or disposed therebetween.

[0067] Also, when expressed as "on" or "under", it can not only include a case based on an upward direction of one element, but also include a case based on a downward direction of one element.

[0068] Electronic device

[0069] Before describing embodiments, an electronic device to which a semiconductor package of embodiments is applied will be briefly described. The electronic device includes a main board (not shown). The main board can be physically and / or electrically connected to various components. For example, the main board can be connected to a semiconductor package of embodiments. Various semiconductor devices can be mounted on the semiconductor package.

[0070] The semiconductor device can include an active device and / or a passive device. The active device can be a semiconductor chip in the form of an integrated circuit (IC) in which hundreds to millions of devices are integrated in one semiconductor device. The semiconductor device can be a logic chip, a memory chip, etc. The logic chip can be a central processing unit (CPU), a graphics processing unit (GPU), etc. For example, the logic chip can be an application processor (AP) chip including at least one of a central processing unit (CPU), a graphics processing unit (GPU), a digital signal processor, a cryptographic processor, a microprocessor, and a microcontroller, or an analog-digital converter, an ASIC (application-specific IC), etc., or a chipset including a specific combination of those listed so far.

[0071] The memory chip can be a stacked memory such as an HBM. The memory chip can also include a memory chip such as a volatile memory (e.g., DRAM), a non-volatile memory (e.g., ROM), a flash memory, etc.

[0072] Further, the semiconductor device can be an integrated passive device (IPD). Further, the semiconductor device can be a multi layer ceramic condenser (MLCC) or a silicon-based condenser.

[0073] On the other hand, the product group of the semiconductor package to which the embodiment is applied can be any one of a CSP (Chip Scale Package), an FC-CSP (Flip Chip-Chip Scale Package), an FC-BGA (Flip Chip Ball Grid Array), a POP (Package On Package), and a SIP (System In Package), but is not limited thereto.

[0074] Further, the electronic device can be a smart phone, a personal digital assistant, a digital video camera, a digital still camera, a vehicle, a high-performance server, a network system, a computer, a monitor, a tablet, a laptop, a netbook, a television, a video game, a smart watch, an automotive, etc. However, the embodiment is not limited thereto, and can be any other electronic device that processes data other than these.

[0075] - Circuit board and semiconductor package -

[0076] Figure 1 is a cross-sectional view illustrating a semiconductor package according to a first embodiment, Figure 2 is an enlarged cross-sectional view of a region R1 of Figure 1 Figure 3 is a cross-sectional view illustrating a semiconductor package according to a second embodiment, Figure 1 ​a plan view of the first protective layer and the molding member of FIG. 1, and Figure 4 and Figure 5 are cross-sectional views illustrating various embodiments of an opening portion provided in the first protective layer of FIG. 1. Figure 1

[0077] Referring to Figure 1 and 2 , the semiconductor package includes a circuit board 100.

[0078] In one embodiment, the circuit board 100 can provide a space to which at least one external substrate is coupled. For example, the external substrate can refer to a main board provided in an electronic device. That is, the circuit board 100 of one embodiment can be used to connect a main board of an electronic device with a plurality of semiconductor devices.

[0079] In another embodiment, the circuit board 100 can be used to connect a package substrate connected to a main board of an electronic device with a plurality of semiconductor devices.

[0080] The circuit board 100 can electrically connect the connection member 220 with the semiconductor devices 250 and 255, and electrically connect the connection member 220 and the semiconductor devices 250 and 255 with a main board of an electronic device.

[0081] For example, the circuit board 100 can be used as a horizontal connection between a plurality of semiconductor devices and a vertical connection between the semiconductor devices and a package substrate and / or a main board.

[0082] The connection member 220 and the semiconductor devices 250 and 255 are mounted on the circuit board 100. For example, the circuit board 100 can include a first land portion 121 and a conductive bonding portion 160.

[0083] The connection member 220 can be mounted on the first land portion 121 of the circuit board 100. In addition, the semiconductor devices 250 and 255 can be mounted on the conductive bonding portion 160 of the circuit board 100.

[0084] The connection member 220 and the semiconductor devices 250 and 255 can have a stacked structure in a vertical direction on the circuit board 100.

[0085] In one embodiment, the connection member 220 can be an active device. For example, the connection member 220 can be used as a semiconductor device and electrically connected between the semiconductor devices 250 and 255 and the circuit board 100. At this time, the connection member 220 can be used as a logic chip and electrically connected between the semiconductor devices 250 and 255 and the circuit board 100. Accordingly, the connection member 220 can be used as a logic chip and perform a signal transmission function between the semiconductor devices 250 and 255 provided thereon and the circuit board 100. Preferably, the connection member 220 can be a bridge die.​

[0086] For example, functionally separated Chiplet units of a semiconductor device or a plurality of semiconductor devices 250 and 255 having different functions (e.g., CPU and GPU, or GPU and HBM) can be mounted on the circuit board 100, and the connection member 220 can electrically connect the plurality of semiconductor devices 250 and 255 to enable communication between the semiconductor devices.

[0087] In one embodiment, the connection member 220 can be an inorganic bridge. For example, the connection member 220 can be a silicon bridge. The connection member 220 can include a silicon substrate and a redistribution layer. For example, the connection member 220 can be formed of the same material as the semiconductor devices 250 and 255. If the connection member 220 is an inorganic bridge, the connection member can have a structure in which the pads 221 and 222 disposed on the upper and lower surfaces of the connection member 220 are electrically connected via a through silicon via (TSV) 223.

[0088] In another embodiment, the connection member 220 is an organic bridge. For example, the connection member 220 can include an organic substrate in which a silicon substrate of an inorganic bridge is re-provided with an organic substrate. The organic substrate can include a photocurable resin or a thermosetting resin. If the connection member 220 is an organic bridge, the pads 221 and 222 disposed on the upper and lower surfaces of the connection member 220 can be electrically connected to each other via a through electrode 223 that penetrates the connection member 220. Specifically, when the connection member 220 is an organic bridge, the connection member 220 can include a plurality of redistribution insulating layers, a plurality of redistribution pattern layers, and a plurality of redistribution via electrodes stacked in a vertical direction. For example, the redistribution insulating layer of the connection member 220 can have a laminate structure including a plurality of layers stacked in a vertical direction. Further, the redistribution pattern layer can be disposed on each surface of the redistribution insulating layer formed as a plurality of layers. Further, the redistribution via electrode can electrically connect the redistribution pattern layers formed on the surface of each redistribution insulating layer. Accordingly, when the connection member 220 includes an organic material, the above-described through electrode 223 can be understood as including a plurality of redistribution pattern layers spaced apart from each other in a vertical direction on a plurality of redistribution insulating layers having a laminate structure, and a plurality of via electrodes connecting a plurality of redistribution pattern layers formed on different layers.

[0089] The connection member 220 can be disposed on the circuit board 100 in a plurality of units spaced apart from each other in a horizontal direction. For example, semiconductor packages applied to servers, HPCs, and other devices require high electrical power and / or multi-signal characteristics. Further, semiconductor packages applied to servers, HPCs, and other devices can have three or more mounted semiconductor devices. In this case, a plurality of connection members 220 can be disposed while being horizontally spaced apart on the circuit board 100.

[0090] The semiconductor package can include a first connection part 210 disposed between the first land part 121 of the circuit board 100 and the lower land 221 of the connection member 220. The first connection part 210 physically couples the connection member 220 to the circuit board 100 and electrically connects them.

[0091] The semiconductor package can include a second connection part 230 disposed between the conductive joint part 160 of the circuit board 100 and the terminals 251 and 256 of the semiconductor devices 250 and 255. The conductive joint part 160 can function as a line for transmitting power and / or power signals to the semiconductor devices 250 and 255, and the second connection part 230 can be electrically connected between the conductive joint part 160 and the semiconductor devices 250 and 255. Thereby, embodiments can provide stable power and / or power supply to the semiconductor devices 250 and 255 through the conductive joint part 160, thereby enabling the semiconductor devices 250 and 255 to stably operate. In particular, the number of power terminals and communication terminals of the semiconductor package applied to servers and / or HPCs (High Performance Computers) is significantly increased, and thus, a circuit board having a large number of layers and a large area is required, and thus, the thickness of the core layer provided in the core board is also increasing. According to this trend, it can be difficult to provide stable power and / or power supply to the semiconductor devices 250 and 255, and the semiconductor devices 250 and 255 can abnormally operate due to power and / or power shortage of the semiconductor devices 250 and 255.

[0092] Accordingly, embodiments include the conductive joint part 160, and can provide stable power and / or power to the semiconductor devices 250 and 255 using the conductive joint part 160.

[0093] For example, the first semiconductor device 250 includes a first set of terminals 251a that overlap the conductive joints 160 in the vertical direction and a second set of terminals 251b that overlap the upper pads 222 of the connection member 220 in the vertical direction. Also, the second semiconductor device 255 includes a first set of terminals 256a that overlap the conductive joints 160 in the vertical direction and a second set of terminals 256b that overlap the upper pads 222 of the connection member 220 in the vertical direction. At this time, the first sets of terminals 251a and 256a can include power and / or electrical power terminals disposed among a plurality of terminals in the semiconductor devices 250 and 255, and the second sets of terminals 251b and 256b can include communication terminals disposed among the plurality of terminals in the semiconductor devices 250 and 255. Here, the communication terminals can include terminals for transmitting and receiving signals between the semiconductor devices 250 and 255 and terminals for transmitting and receiving signals between each of the semiconductor devices 250 and 255 and the circuit board 100.

[0094] At this time, the second connection portion 230 can be disposed between the conductive joints 160 and the first sets of terminals 251a and 256a of the semiconductor devices 250 and 255. The second connection portion 230 can physically couple the semiconductor devices 250 and 255 to the conductive joints 160 of the circuit board 100 and electrically connect between the semiconductor devices 250 and 255 and the conductive joints 160 of the circuit board 100. In particular, the second connection portion 230 can stably couple the first sets of terminals 251a and 256a of the semiconductor devices 250 and 255 to the conductive joints 160, thereby ensuring stable power and / or electrical power supply to the first sets of terminals 251a and 256a of the semiconductor devices 250 and 255. Accordingly, the embodiments can solve the power and / or electrical power shortage problem of the semiconductor devices 250 and 255.

[0095] The semiconductor package can further include a third connection portion 240 disposed between the upper pads 222 of the connection member 220 and the second sets of terminals 251b and 256b of the semiconductor devices 250 and 255. The third connection portion 240 physically connects the upper pads 222 of the connection member 220 to the second sets of terminals 251b and 256b of the semiconductor devices 250 and 255 while electrically connecting between the upper pads 222 of the connection member 220 and the second sets of terminals 251b and 256b of the semiconductor devices 250 and 255.

[0096] Accordingly, the semiconductor devices 250 and 255 can receive the power signal and / or the electrical power from the conductive joint 160 of the circuit board 100 via the second connection part 230. In addition, the semiconductor devices 250 and 255 can exchange the communication signal with the connection member 220 through the third connection part 240. However, embodiments are not limited thereto, and the semiconductor devices 250 and 255 can also receive the common voltage and / or the common current through the connection member 220.

[0097] In this case, the semiconductor package can provide the power signal and / or the electrical power to the semiconductor devices 250 and 255 through the conductive joint 160, thereby providing sufficient power to drive the semiconductor devices 250 and 255 or to achieve smooth control of power operation.

[0098] In particular, the number of power terminals and communication terminals of the semiconductor package applied to a server and / or an HPC (High Performance Computer) is significantly increased, and thus, a circuit board having a large number of layers and a large area is required, and thus, the thickness of the core layer provided in the core board is also increased. According to this trend, it can be difficult to provide stable power and / or power supply to the semiconductor devices 250 and 255, and the semiconductor devices 250 and 255 can be abnormally operated due to insufficient power and / or electrical power of the semiconductor devices 250 and 255.

[0099] Accordingly, embodiments include the conductive joint 160, which can be used to secure stable power and / or power supply to the semiconductor devices 250 and 255.

[0100] In this case, the conductive joint 160 of the embodiments can perform a different function from a pillar or a post-bump provided in a typical PoP (Package on Package). For example, the pillar or the post-bump provided in the PoP is used to connect an upper package substrate and a lower package substrate. In contrast, the conductive joint 160 of the embodiments is used to transmit power and / or electrical power to the semiconductor devices 250 and 255. In addition, the semiconductor devices 250 and 255 not only have to be electrically connected to the conductive joint 160 but also have to be electrically connected to the connection member 220, and thus, the conductive joint 160 of the embodiments has to be disposed such that there is no height deviation from the upper pad 222 disposed in the connection member 220.

[0101] Accordingly, embodiments can place the conductive junction 160 more stably on the circuit board 100 by combining the arrangement of the molding member 150, the first protective layer 140, and the conductive junction 160 disposed on the circuit board 100, can supply power and / or electrical power more stably to the semiconductor devices 250 and 255 through the conductive junction 160, and can minimize the height deviation between the conductive junction 160 and the upper pad 222 of the connection member 220.

[0102] Accordingly, embodiments can improve the driving characteristics of the semiconductor devices 250 and 255. That is, embodiments can solve the problem of insufficient power supplied to the semiconductor devices 250 and 255. In addition, embodiments can provide at least one of the power signal, the electrical power, and the communication signal of the semiconductor devices 250 and 255 through different paths via the conductive junction 160, the second connection part 230, and the third connection part 240. Accordingly, embodiments can solve the problem of communication signal loss caused by the power signal. For example, embodiments can minimize mutual interference between the power signal and the communication signal. Accordingly, embodiments can enable the semiconductor package to operate more stably, and can also enable products such as servers including the semiconductor package to operate stably.

[0103] The first connection part 210, the second connection part 230, and the third connection part 240 can electrically connect the plurality of components using at least one of a wire bonding, a solder bonding, and a direct metal-to-metal bonding. That is, since the first connection part 210, the second connection part 230, and the third connection part 240 have a function of electrically connecting the plurality of components, the connection parts can be understood as an electrical connection part, rather than a solder or a wire.

[0104] For example, the bonding of embodiments can employ at least one of a solder bonding and / or a direct metal-to-metal bonding. The solder bonding method can electrically connect the plurality of components using a material including at least one of Sn, Ag, and Cu. In addition, the direct metal-to-metal bonding method can mean directly bonding the plurality of components by applying heat and pressure between the plurality of components to cause recrystallization, without using a solder, a wire, a conductive adhesive, or the like. In addition, the direct metal-to-metal bonding method can refer to a bonding method using the first connection part 210. In this case, the first connection part 210 can refer to a metal layer formed between the plurality of components by recrystallization. In addition to the solder bonding and the direct metal-to-metal bonding, there are connection methods such as wire bonding. However, the wire bonding is not suitable for connection to the conductive junction 160 for power transmission because the number of terminals to be connected is small, and the resistance is large due to the thin thickness of the wire.

[0105] According to an embodiment, the semiconductor package can be applied to a server or an HPC (High Performance Computing), and thus, the number of terminals capable of transmitting a large amount of power and signals can be significantly increased compared to a conventional package. Accordingly, the size and pitch of the first connection part 210, the second connection part 230, and the third connection part 240 can be smaller than those of a conventional package. Accordingly, according to an embodiment, the first connection part 210, the second connection part 230, and the third connection part 240 can apply a solder bonding method, and the plurality of components can be connected to each other by a thermal compression bonding method, which is one of the solder bonding methods. The thermal compression bonding method refers to a method of directly connecting the plurality of components by applying heat and pressure to the first connection part 210, the second connection part 230, and the third connection part 240. In this way, the circuit board 100 is electrically connected to the connection member 220 and the semiconductor devices 250 and 255.

[0106] The circuit board 100 can include an insulating layer 110, a first electrode part 120, a second electrode part 130, a first protective layer 140, a second protective layer 145, a molding member 150, and a conductive bonding part 160. Here, the insulating layer 110, the first electrode part 120, the second electrode part 130, the first protective layer 140, and the second protective layer 145 of the circuit board 100 can be referred to as a laminate structure stacked in a vertical direction. In addition, the molding member 150 and the conductive bonding part 160 can be disposed on the laminate structure of the circuit board 100.

[0107] The insulating layer 110 can provide excellent processability, enable a thin substrate, and enable miniaturization of an electrode part (for example, the first electrode part 120) disposed in the circuit board 100. Accordingly, the insulating layer 110 can include at least one of a photosensitive organic material not including a reinforcing member, a core insulating member including a glass fiber as a reinforcing member, a resin insulating member including an inorganic particle, and a resin insulating member including a GCP (Glass Core Primer) as a reinforcing member. In one embodiment, the insulating layer including the reinforcing member can be disposed as a core layer, and thus the circuit board can be disposed as a core substrate.

[0108] For example, the insulating layer 110 can use a product ABF (Ajinomoto Build-up Film) published by Ajinomoto Co., Ltd., and can use FR-4, BT (Bismaleimide Triazine), PID (Photo Imageable Dielectric resin), BT, etc., but is not limited thereto.

[0109] The insulating layer 110 can be provided in a stacked form of a plurality of layers. As shown, the insulating layer 110 can have a five-layer stacked structure, but is not limited thereto. For example, the insulating layer 110 can have a four-layer or less or a six-layer or more stacked structure. Figure 1

[0110] In one embodiment, the plurality of layers of the insulating layer 110 can be formed of the same insulating material. However, embodiments are not limited thereto, and at least one of the plurality of layers of the insulating layer 110 can have a different insulating material from the other layers.

[0111] Through the stacked structure of the insulating layer 110 described above, the circuit board of embodiments can electrically connect the semiconductor device and the main board.

[0112] By including the reinforcing member in at least one of the plurality of layers of the insulating layer 110, the rigidity of the circuit board 100 can be improved. For example, the reinforcing member can prevent the circuit board and the semiconductor package from being significantly warped in a particular direction. Accordingly, the insulating layer 110 can be prevented from being warped during a manufacturing process of the circuit board 100, thereby improving the positional accuracy of the first electrode portion 120 and the second electrode portion 130 and further improving the alignment therebetween. In addition, by securing the rigidity of the circuit board, the semiconductor device can be stably coupled to the circuit board, thereby securing the stable operation of the semiconductor device. In addition, a product such as a server to which the semiconductor package of embodiments is applied can be stably operated, thereby improving product reliability.

[0113] The circuit board 100 includes electrode portions. The electrode portions include the first electrode portion 120, the second electrode portion 130, and the conductive bonding portion 160.

[0114] The first electrode portion 120 can be horizontally disposed between each of the plurality of layers of the insulating layer 110, and the second electrode portion 130 can be vertically disposed to penetrate each of the plurality of layers of the insulating layer 110.

[0115] ​The first electrode part 120 can include pads and / or traces. The pads of the first electrode part 120 can overlap the second electrode part 130 in a vertical direction, and thus can refer to electrodes directly connected to the second electrode part 130. The traces of the first electrode part 120 can refer to elongated signal lines connected to the pads of the first electrode part 120 and thus transmitting signals between the plurality of pads.

[0116] The first electrode part 120 includes a pad part disposed on the outermost layer of the insulating layer 110. The pad part can refer to wiring electrodes disposed on the uppermost layer and the lowermost layer among the first electrode part 120 disposed in each layer of the insulating layer 110.

[0117] The first electrode part 120 includes a first pad part 121 and a second pad part 122.

[0118] The first pad part 121 and the second pad part 122 can refer to electrodes disposed on the uppermost layer among the first electrode part disposed on each layer of the insulating layer 110. However, embodiments are not limited thereto, and depending on the direction in which the semiconductor package is viewed, the first pad part 121 and the second pad part 122 can also refer to electrodes disposed on the lowermost layer of the insulating layer 110.

[0119] The first pad part 121 and the second pad part 122 can be disposed in different regions of the upper surface of the insulating layer 110 and spaced apart from each other in a horizontal direction. According to one embodiment, the different regions of the upper surface of the insulating layer 110 can be divided into an inner region overlapping the connection member 220 in a vertical direction and an outer region surrounding the outer side of the connection member 220.

[0120] The first pad part 121 can be disposed in the inner region of the upper surface of the insulating layer 110, and the second pad part 122 can be disposed in the outer region of the upper surface of the insulating layer 110. A plurality of second pad parts 122 can be disposed in the outer region of the upper surface of the insulating layer 110 along the periphery of the insulating layer 110.

[0121] The width of the second pad part 122 in the horizontal direction can be greater than the width of the first pad part 121 in the horizontal direction. For example, the second pad part 122 is a pad bonded with the conductive bonding part 160, and can serve as a signal line to supply a power signal and / or an electrical power to the semiconductor devices 250 and 255. The width of the first pad part 121 can correspond to the width of the lower pad 221 disposed in the connection member 220.

[0122] In an embodiment, the second pad part 122 having a width greater than that of the first pad part 121 can be disposed in an outer region of the upper surface of the insulating layer 110 surrounding the first pad part 121, and the widths of the first pad part 121 and the second pad part 122 can be different from the width of the pad part 120 disposed on the lower surface of the insulating layer 110. That is, since the widths of the pad parts 120, 121, and 122 disposed on the upper and lower surfaces of the insulating layer 110 are different from each other, the insulating layer 110 can be prevented from being significantly warped in a particular direction.

[0123] For example, depending on the thickness of each layer of the insulating layer 110, the properties of each layer of the insulating layer 110, the wiring density of the first electrode part 120 disposed on each layer of the insulating layer 110, etc., the circuit board can be warped to have a convex shape or a concave shape. In addition, when the circuit board is warped in a particular direction, the first pad part 121 and the second pad part 122 disposed on the circuit board can have different heights, and thus the connection member 220 and the semiconductor devices 250 and 255 can not be stably coupled on the circuit board 100.

[0124] For example, the second pad part 122 can prevent the insulating layer 110 from being warped to have a convex shape or a concave shape. For example, the embodiment allows the second pad part 122 to have a width greater than that of the first pad part 121, and allows the widths of the first pad part 121 and the second pad part 122 to be different from the width of the pad part 120 disposed on the lower surface of the insulating layer 110, to secure rigidity in the outer region of the upper surface of the insulating layer 110 by the second pad part 122. Accordingly, the embodiment can prevent the circuit board from being significantly warped in a particular direction, and can stably mount the semiconductor devices on the circuit board. For example, the embodiment can allow the second pad part 122 having a width greater than that of the pad part 120 disposed on the lower surface of the insulating layer 110 and the first pad part 121 disposed in the inner region of the upper surface of the insulating layer 110 to be disposed in the outer region of the upper surface of the insulating layer 110, and can prevent both ends of the circuit board 100 from being warped in the upward direction and / or the downward direction. However, since the direction of warping of the insulating layer 110 can vary depending on the size of the circuit board, the number of laminated insulating layers 110, and the type of insulating layer constituting the insulating layer 110, it can be freely designed without being limited to the embodiment.

[0125] Accordingly, the embodiment can prevent the circuit board from being significantly warped in a certain direction by using the second pad portion 122 having a relatively large width, thereby enabling the semiconductor device to be stably disposed on the circuit board. Accordingly, the embodiment can enable the semiconductor device to stably operate, thereby enabling stable operation of the semiconductor package and a product such as a server to which the semiconductor package is applied.

[0126] In addition, the embodiment can prevent the circuit board from being significantly warped in a certain direction while enabling a process of mounting the semiconductor device to smoothly proceed, by arranging the first pad portion 121 and the second pad portion 122. Accordingly, the embodiment can reduce the difficulty of the process of mounting the semiconductor device, thereby improving product yield, and further solve the electrical short circuit problem and / or the electrical open circuit problem between the first pad portion 121 of the connection member 220 and the lower pad 221.

[0127] The second electrode portion 130 can be formed by filling a via formed in a plurality of layers of the insulating layer 110 with a conductive material. The second electrode portion 130 is connected to the first electrode portion 120. The second electrode portion 130 can be connected to the wiring electrode formed in different layers perpendicularly.

[0128] In addition, the circuit board 100 can include a conductive junction portion 160. The conductive junction portion 160 can be disposed on the second pad 122. The conductive junction portion 160 can be formed to surround the first pad portion 121. For example, the conductive junction portion 160 can be disposed to surround the first pad portion 121, and the conductive junction portion 160 can be disposed a plurality of times spaced apart from each other along the circumferential direction of the upper surface of the insulating layer 110.

[0129] An upper surface of the conductive joint 160 can be positioned on the same plane as an upper surface of the upper pad 222 of the connection member 220. Here, being positioned on the same plane can mean that a height difference between the upper surface of the conductive joint 160 and the upper surface of the upper pad 222 of the connection member 220 is 10 µm or less, or 8 µm or less, or 5 µm or less, or 2 µm or less. In particular, the conductive joint 160 can be stably disposed on the circuit board 100 by the structure of the first protective layer 140 and the molding member 150, and can also be disposed on the same plane as the upper pad 222 of the connection member 220. This is because the conductive joint 160 can be firmly fixed and / or joined by the first protective layer 140 and the molding member 150, thereby resolving reliability problems such as peeling and / or cracking of the conductive joint 160, and allowing the conductive joint 160 to have the same height as the upper pad 222 of the connection member 220.

[0130] To this end, the thickness of the conductive joint 160 in the vertical direction can be greater than the thickness of the through electrode 230 provided in the connection member 220 in the vertical direction. For example, the conductive joint 160 can be greater than the sum of the thicknesses in the vertical direction of a plurality of redistribution via electrodes provided in each different redistribution insulating layer of the connection member 220. Accordingly, the height of the conductive joint 160 can be higher than the height of the connection member 220. For example, the upper surface of the conductive joint 160 can be positioned higher than the upper surface of the connection member 220. Accordingly, the embodiment can enable stable supply of power to the semiconductor devices 250 and 255 through the conductive joint 160. In addition, the embodiment can enable mounting of the semiconductor devices 250 and 255 while the semiconductor devices 250 and 255 are stably supported by the conductive joint 160.

[0131] During a process of mounting the semiconductor devices 250 and 255, the conductive joint 160 can space the connection member 220 and the semiconductor devices 250 and 255 apart in the vertical direction, and thus, the semiconductor devices 250 and 255 can be stably mounted.

[0132] The conductive joint 160 can penetrate the first protective layer 140 and the molding member 150, which will be described later.

[0133] In one embodiment, when the conductive joint 160 penetrates the molding member 150, the upper surface of the conductive joint 160 can be positioned on the same plane as the upper surface of the molding member 150, or the upper surface of the conductive joint 160 can be positioned higher than the upper surface of the molding member 150.

[0134] Although the conductive joint 160 penetrates the molding member 150, embodiments are not limited thereto. For example, the conductive joint 160 can penetrate a portion of the molding member 150. In this case, an upper surface of the conductive joint 160 can be disposed lower than an upper surface of the molding member 150, and the molding member 150 can include an opening overlapping the upper surface of the conductive joint 160 in a vertical direction.

[0135] The conductive joint 160 can be divided into a plurality of through portions in a vertical direction. For example, the conductive joint 160 can include a first through portion 161 and a second through portion 162.

[0136] The first through portion 161 of the conductive joint 160 can penetrate the first protective layer 140 disposed on the second pad portion 122. The second through portion 162 of the conductive joint 160 can penetrate the molding member 150 disposed on the first protective layer 140.

[0137] A width of the first through portion 161 in a horizontal direction can be different from a width of the second through portion 162 in the horizontal direction, and thus, side surfaces of the first through portion 161 and the second through portion 162 can have steps. In one embodiment, the width of the first through portion 161 can be smaller than the width of the second through portion 162. For example, a width of an upper surface of the conductive joint 160 connected to the first group of terminals 251a and 256a of the semiconductor devices 250 and 255 can be greater than a width of a lower surface of the conductive joint 160 connected to the second pad portion 122. When the width of the first through portion 161 and the width of the second through portion 162 are disposed to be the same, if a pattern for arranging the conductive joint 160 is misaligned with a position of the second pad portion 122, a contact area between the second pad portion 122 and the conductive joint 160 can become narrow. Thus, since resistance of power and / or a signal supplied can increase, signal and / or power loss can increase. The conductive joint 160 can function as a wiring for supplying a power signal and / or power to the semiconductor devices 250 and 255, and thus, since the width of the conductive joint 160 is greater than the width of the second pad portion 122, a total resistance can be reduced. Thus, compared to a case where the width of the first through portion 161 and the width of the second through portion 162 are disposed to be the same, embodiments can increase intensity of power or power supplied to the semiconductor devices 250 and 255. In this way, embodiments can enable the semiconductor devices 250 and 255 to operate more stably, and can improve operational reliability of the semiconductor package.

[0138] The circuit board 100 can include the first protective layer 140 and the second protective layer 145.

[0139] For example, the first protective layer 140 and the second protective layer 145 can be a solder resist layer including an organic polymer material. Since the solder resist layer has poor wettability with respect to solder, it can protect the circuit board 100 from an electrical short problem caused by contact between the solder disposed on each pad portion, and can protect the insulating layer 110 from external contaminants such as moisture or particles that can be exposed during a process. For example, the first protective layer 140 and the second protective layer 145 can include an epoxy acrylate series resin. In detail, the first protective layer 140 and the second protective layer 145 can include a resin, a curing agent, a photoinitiator, a pigment, a solvent, a filler, an additive, an acrylic monomer, etc. However, embodiments are not limited thereto, and the first protective layer 140 and the second protective layer 145 can be any one of a photo solder resist layer, an overcoat layer, and a polymer material.

[0140] The first protective layer 140 can be disposed on the upper surface of the insulating layer 110. Also, the second protective layer 145 can be disposed on the lower surface of the insulating layer 110.

[0141] The first protective layer 140 can include at least one opening portion 141. For example, the first protective layer 140 can include an opening portion 141 that overlaps the semiconductor devices 250 and 255 and / or the first pad portion 121 in a vertical direction.

[0142] In one embodiment, the opening portion 141 can penetrate the upper surface and the lower surface of the first protective layer 140. In this case, the opening portion 141 can be referred to as a via hole that penetrates the first protective layer 140.

[0143] A plurality of opening portions 141 can be disposed. For example, a plurality of first pad portions 121 can be disposed, and a plurality of opening portions 141 can be disposed so as to overlap each of the plurality of first pad portions in a vertical direction. However, embodiments are not limited thereto, and one opening portion 141 can be disposed so as to overlap the plurality of first pad portions as a whole in a vertical direction.

[0144] The sidewall 142 of the opening portion 141 of the first protective layer 140 can have a step. For example, the first protective layer 140 can be disposed along a circumferential direction of an area in which the first pad portion 121 is disposed, and can have a stepped sidewall 142.

[0145] For example, the sidewall 142 of the opening portion 141 of the first protective layer 140 can include a first portion 142a adjacent to the lower surface of the first protective layer 140 and a second portion 142b disposed on the first portion 142a and having a step with respect to the first portion 142a.

[0146] For example, in the opening portion 141 of the first protective layer 140, the width of the first portion 142a in the horizontal direction can be different from the width of the second portion 142b in the horizontal direction.

[0147] For example, the first portion 142a of one embodiment can have a slope whose width does not change from the upper surface of the first protective layer 140 toward the lower surface of the first protective layer 140. The second portion 142b of one embodiment can have a slope whose width does not change from the upper surface of the first protective layer 140 toward the lower surface of the first protective layer 140. At this time, the width of the opening portion 141 of the first protective layer 140 in the first portion 142a can be different from the width of the opening portion 141 of the first protective layer 140 in the second portion 142b. For example, the width of the opening portion 141 of the first protective layer 140 in the first portion 142a can be smaller than the width of the opening portion 141 of the first protective layer 140 in the second portion 142b. That is, the sidewall 142 of the opening portion 141 of the first protective layer 140 can include the first portion 142a and the second portion 142b having steps.

[0148] Thus, embodiments can improve the physical reliability of the first protective layer 140. For example, the first protective layer 140 can expand and / or contract due to thermal cycles. At this time, the expansion and / or contraction can cause the first protective layer 140 to warp due to the thermal cycles, which can cause a physical reliability problem in which the first protective layer 140 peels from the insulating layer 110. In one embodiment, the sidewall 142 of the opening portion 141 of the first protective layer 140 has steps including the first portion 142a and the second portion 142b. In this case, the surface area of the sidewall 142 having steps can be greater than the surface area of a sidewall without steps. In this case, when the surface area of the sidewall 142 is large, the flow range of the first protective layer 140 can further increase during expansion and / or contraction, thereby minimizing thermal deformation of the first protective layer 140 due to expansion and / or contraction. Thus, embodiments can address the physical reliability problem of the first protective layer 140 from peeling from the insulating layer 110, thereby ensuring stable protection of the insulating layer 110 and the electrode portion by the protective layer.

[0149] In particular, the first protective layer 140 can improve adhesion to the molding member 150 by including the opening portion 141 having steps, and the conductive bonding portion 160 can be more stably molded by the molding member 150. Thus, embodiments can achieve more stable power and / or power supply to the semiconductor devices 250 and 255 through the conductive bonding portion 160, and can minimize the height deviation between the conductive bonding portion 160 and the upper pad 222 of the connection member 220.

[0150] The circuit board 100 or the semiconductor package can include a molding member 150. The molding member 150 can be an epoxy molding compound (EMC), but is not limited thereto.

[0151] The molding member 150 can be disposed on the first protective layer 140. The molding member 150 can be disposed to cover an upper surface of the first protective layer 140. In addition, the molding member 150 can overlap at least a portion of the opening portion 141 disposed on the first protective layer 140 in a vertical direction. For example, the molding member 150 can be disposed to cover the sidewall 142 of the first protective layer 140. Preferably, the molding member 150 can contact a step between the first portion 142a and the second portion 142b of the sidewall 142 of the first protective layer 140.

[0152] At this time, the molding member 150 can contact the step of the sidewall 142 of the first protective layer 140, thereby increasing a contact area between the molding member 150 and the first protective layer 140. Accordingly, the embodiment can improve a bonding strength between the molding member 150 and the first protective layer 140, and secure that the molding member 150 is firmly bonded to the first protective layer 140.

[0153] In addition, the molding member 150 can mold the conductive bonding part 160. For example, the molding member 150 can be disposed in an outer region of an upper portion of the circuit board 100, and can mold the conductive bonding part 160. At this time, the molding member 150 can contact the step of the sidewall 142 of the first protective layer 140, and thus the conductive bonding part 160 can be molded while being firmly bonded on the first protective layer 140. Accordingly, the embodiment can enable the conductive bonding part 160 to be more stably protected by the molding member 150, thereby enabling the semiconductor devices 250 and 255 connected to the conductive bonding part 160 to more stably operate. For example, the embodiment can enable the conductive bonding part 160 to supply stable power and / or electric power to the semiconductor devices 250 and 255, thereby improving operational reliability of the semiconductor devices 250 and 255.

[0154] For example, referring to (a) of FIG. 1, Figure 3 At this time, the first protective layer 140 includes the opening portion 141 overlapping the first pad portion 121 in the vertical direction. In addition, the sidewall 142 of the opening portion 141 of the first protective layer 140 can be disposed along a circumferential direction of a region on which the first pad portion 121 is disposed. At this time, the first portion 142a and the second portion 142b of the sidewall 142 of the first protective layer 140 can have a step.

[0155] In addition, referring to (b) of FIG. 1, Figure 3of (b), the molding member 150 can be disposed on the first protective layer 140. At this time, the molding member 150 can mold the conductive junction 160. Also, the molding member 150 can have an open region overlapping the first pad portion 121 in the vertical direction. For example, the molding member 150 can be spaced apart from the connection member 220 disposed on the first pad portion 121, and can be disposed to mold the conductive junction 160 along the circumferential direction of the side surface of the connection member 220. At this time, the molding member 150 can overlap at least a portion of the open portion 141 disposed on the first protective layer 140 in the vertical direction.

[0156] For example, the molding member 150 can be disposed to fill at least a portion of the open portion 141 disposed in the first protective layer 140.

[0157] Accordingly, the molding member 150 can be in contact with the sidewall 142 of the open portion 141 disposed in the first protective layer 140. That is, the molding member 150 can be in contact with the first portion 142a and the second portion 142b of the sidewall 142 of the open portion 141 disposed in the first protective layer 140. In this way, the embodiment can increase the contact area between the molding member 150 and the first protective layer 140, thereby allowing the molding member 150 to be firmly joined to the first protective layer 140. Also, the embodiment can enable the conductive junction 160 to be more stably protected by the molding member 150, thereby enabling the semiconductor devices 250 and 255 connected to the conductive junction 160 to more stably operate. For example, the embodiment can enable the conductive junction 160 to supply stable power and / or electrical power to the semiconductor devices 250 and 255, thereby improving the operational reliability of the semiconductor devices 250 and 255.

[0158] Also, in one embodiment, the molding member 150 is disposed to cover the sidewall 142 of the open portion 141 of the first protective layer 140. Thereby, the molding member 150 can not only mold the conductive junction 160, but also can mold the sidewall 142 of the first protective layer 140. For example, the molding member 150 can mold the conductive junction 160 while firmly joining and fixing the first protective layer 140 on the insulating layer 110. Accordingly, the embodiment can minimize the stress due to thermal cycles caused by the expansion and / or contraction of the first protective layer 140 being transferred to the conductive junction 160, thereby further improving the physical reliability and / or electrical reliability of the semiconductor package.

[0159] Meanwhile, the step of the sidewall 142 of the open portion 141 disposed in the first protective layer 140 can be modified in various forms.

[0160] For example, referring to FIG. 6, the step of the sidewall 142 of the open portion 141 disposed in the first protective layer 140 can be formed in a straight line shape. Figure 4The opening portion 141 of the first protective layer 140 can have a slope having a step in which the width is reduced from the upper surface to the lower surface of the first protective layer 140.

[0161] Referring to Figure 4 (a), the sidewall 142 of the opening portion 141 of the first protective layer 140 can include a first portion 142a and a second portion 142b having a step. In this case, each of the first portion 142a and the second portion 142b can be perpendicular to the upper surface or the lower surface of the insulating layer 110. For example, the step of the sidewall 142 of the opening portion 141 of the first protective layer 140 of one embodiment can have a stair shape.

[0162] Referring to Figure 4 (b), the sidewall 142 of the opening portion 141 of the first protective layer 140 can include a first portion 142a and a second portion 142b having a step. In this case, each of the first portion 142a and the second portion 142b can have a slope such that the width of the opening portion 141 is gradually reduced from the upper surface to the lower surface of the first protective layer 140. For example, the first portion 142a and the second portion 142b can be provided in the form of a straight line having a constant slope. In this case, compared to Figure 4 (a), the bonding strength between the first protective layer 140 and the molding member 150 can be further improved, thereby further improving the physical and / or electrical reliability of the semiconductor package.

[0163] Referring to Figure 4 (c), the sidewall 142 of the opening portion 141 of the first protective layer 140 can include a first portion 142a and a second portion 142b having a step. At this time, each of the first portion 142a and the second portion 142b can have a slope such that the width of the opening portion 141 is reduced from the upper surface to the lower surface of the first protective layer 140. At this time, the first portion 142a and the second portion 142b can be curved surfaces having a certain curvature. In this case, compared to Figure 4 (a) and (b), the bonding strength between the first protective layer 140 and the molding member 150 can be further improved, thereby further improving the physical and / or electrical reliability of the semiconductor package.

[0164] Further, if the sidewall 142 of the opening portion 141 of the first protective layer 140 has a curved surface, stress due to expansion and / or contraction of the first protective layer 140 due to thermal cycling can be minimized, thereby further improving the physical and / or electrical reliability of the semiconductor package. For example, if the sidewall of the opening portion has a curved surface, the stress due to the expansion and / or contraction of the first protective layer 140 due to thermal cycling can be minimized. Figure 4In case of the structure shown in (a), the edge portions where different slopes intersect are curved at an angle close to a right angle, and as a result, there can be a problem that stress is concentrated in the curved edge portions. In contrast, when the sidewall 142 of the opening portion 141 of the first protective layer 140 has a curved surface, concentration of stress at the edge portions can be prevented, and further, stress can be uniformly distributed in the entire area of the sidewall 142 of the opening portion 141.

[0165] In addition, referring to Figure 5 (a) to (c), the opening portion 141 provided in the first protective layer 140 can have a stepped slope while its width increases from the upper surface to the lower surface of the first protective layer 140.

[0166] Referring to Figure 5 (a), the sidewall 142 of the opening portion 141 of the first protective layer 140 can include a first portion 142a and a second portion 142b having a step. At this time, each of the first portion 142a and the second portion 142b can be perpendicular to the upper surface or the lower surface of the insulating layer 110. For example, the step of the sidewall 142 of the opening portion 141 of the first protective layer 140 of one embodiment can have a stair shape. At this time, in case of (a), the step between the first portion 142a and the second portion 142b can have a concave shape concaved in the horizontal direction, thereby further improving the bonding strength with the molding member 150. Figure 5

[0167] Referring to Figure 5 (b), the sidewall 142 of the opening portion 141 of the first protective layer 140 can include a first portion 142a and a second portion 142b having a step. At this time, each of the first portion 142a and the second portion 142b can have a slope such that the width of the opening portion 141 gradually increases from the upper surface to the lower surface of the first protective layer 140. For example, the first portion 142a and the second portion 142b can be provided in the form of a straight line having a certain slope. In this case, compared to (a), the bonding strength between the first protective layer 140 and the molding member 150 can be further improved, thereby further improving the physical reliability and / or the electrical reliability of the semiconductor package. Figure 5

[0168] Referring to Figure 5 ​​of (c), the sidewall 142 of the opening portion 141 of the first protective layer 140 can include a first portion 142a and a second portion 142b having a step. At this time, each of the first portion 142a and the second portion 142b can have a slope such that the width of the opening portion 141 decreases from the upper surface to the lower surface of the first protective layer 140. At this time, the first portion 142a and the second portion 142b can be curved surfaces having a certain curvature. In this case, compared to (a) and (b) of the related art, Figure 5 Compared to (a) and (b) of the related art, the adhesion strength between the first protective layer 140 and the molding member 150 can be further improved, thereby further improving the physical reliability and / or the electrical reliability of the semiconductor package.

[0169] In addition, when the sidewall 142 of the opening portion 141 of the first protective layer 140 is curved, stress caused by the expansion and / or contraction of the first protective layer 140 due to thermal cycling can be minimized, thereby further improving the physical and / or electrical reliability of the semiconductor package. For example, when the sidewall 142 of the opening portion 141 of the first protective layer 140 is curved, stress can be prevented from being concentrated in the edge portion, and in addition, stress can be uniformly distributed in the entire area of the sidewall 142 of the opening portion 141.

[0170] Meanwhile, the first protective layer 140 and the molding member 150 can include different materials, but are not limited thereto. For example, the first protective layer 140 can be a solder resist layer, and the molding member 150 can be an epoxy resin molding compound layer, but are not limited thereto.

[0171] For example, the first protective layer 140 and the molding member 150 can include the same insulating material, and the interface therebetween can not be very distinct. Accordingly, the embodiment can simplify the manufacturing process by forming the first protective layer 140 and the molding member 150 of the same material, thereby improving the product yield.

[0172] Meanwhile, as Figure 2In a modification example of the embodiment, the thickness of the conductive joint 160 can be different from the thickness of the connection member 220. Also, the height of the conductive joint 160 can be greater than the height of the connection member 220. For example, the height of the conductive joint 160 can be greater than the height of the upper pad 222 provided in the connection member 220. For example, the upper surface of the conductive joint 160 can be positioned higher than the upper surface of the upper pad 222 provided in the connection member 220. Thereby, the conductive joint 160 can be provided to surround the side of the connection member 220 while having a height greater than the height of the connection member 220. Accordingly, the embodiment can more stably protect the connection member 220 through the conductive joint 160, thereby further improving the rigidity of the circuit board and the semiconductor package including the same, and further minimizing the stress applied to the connection member 220. Accordingly, the embodiment can enable the semiconductor devices 250 and 255 to more stably operate, and further improve the operational reliability of the semiconductor package.

[0173] Also, as a modification example of the embodiment, Figure 2 As another modification example of the embodiment, the molding member 150 and the conductive joint 160 can form a structure separate from the circuit board 100. For example, the embodiment can provide a molding structure including the conductive joint 160 and the molding member 150, and the molding member 150 can mold the conductive joint 160 separately from the circuit board 100. In this case, a contact member (e.g., solder) can be provided on the second pad portion 122 of the circuit board 100. Also, the above-described separately manufactured molding structure can be joined to the circuit board 100 via the contact member provided on the second pad portion 122. In this case, the embodiment can minimize the stress transferred to the circuit board during the process of forming the molding member 150, thereby resolving the physical and / or electrical reliability problems of the circuit board. Also, the embodiment can facilitate the process of manufacturing the molding structure by providing a separate molding structure, thereby further improving the product yield.

[0174] Figure 6 is a cross-sectional view of the region R1 according to the second embodiment. Figure 1

[0175] Referring to Figure 6 The conductive joint 160a includes a first through portion 161a and a second through portion 162a.

[0176] The first through portion 161a of the conductive joint 160a can penetrate the first protective layer 140 provided on the first pad portion 121. The second through portion 162a of the conductive joint 160a can penetrate the molding member 150 provided on the first protective layer 140.

[0177] ​The width of the first through portion 161a in the horizontal direction can be different from the width of the second through portion 162a in the horizontal direction, and thus, the side surfaces of the first through portion 161a and the second through portion 162a can have steps.

[0178] In one embodiment, the width of the first through portion 161a can be greater than the width of the second through portion 162a. For example, the width of the upper surface of the conductive joint 160a connected to the first group of terminals 251a and 256a of the semiconductor devices 250 and 255 can be greater than the width of the lower surface connected to the second pad portion 122. That is, the width of the first through portion 161a can be greater than the width of the second through portion 162a. Figure 2 In contrast, the width of the second through portion 162 of the conductive joint 160a of the second embodiment can be reduced while maintaining the width of the first through portion 161a.

[0179] Accordingly, the pitch between the plurality of conductive joints 160a can be reduced, and accordingly, the number of conductive joints 160a disposed on the circuit board 100 can be increased. Accordingly, this embodiment enables the arrangement of the conductive joints 160a corresponding to the increase in the number of the first group of terminals 251 of the semiconductor devices 250 and 255, thereby improving the circuit integration. In addition, when a relatively small power level and / or power is required, or when the number of semiconductor devices disposed on the circuit board increases, this embodiment can be applied. Accordingly, this embodiment can reduce the interval distance between the plurality of conductive joints 160a, increase the number of the plurality of conductive joints 160a disposed within a limited space, and thus, enable more stable power and / or power supply to the plurality of semiconductor devices.

[0180] Figure 7 is a cross-sectional view illustrating a semiconductor package according to a third embodiment.

[0181] Referring to Figure 7 , the semiconductor package can include a molding member. The molding member includes a first molding member 150 and a second molding member 170. The first molding member 150 corresponds to the molding member 150 illustrated in Figure 1 and Figure 2 , and thus, a detailed description thereof will be omitted.

[0182] The semiconductor package may further include a second molding member 170. The second molding member 170 may be configured to fill the opening region of the first molding member 150. For example, the second molding member 170 may be configured to mold around the connecting member 220. Additionally, the second molding member 170 may mold the region between the circuit board 100 and the semiconductor devices 250 and 255, including the second connecting member 230 and the third connecting member 230, as well as the region between the connecting member 220 and the circuit board 100. The second molding member 170 may be a bottom filler. Embodiments may additionally include the second molding member 170, and therefore, the connecting member 220 and the semiconductor devices 250 and 255 can be more stably protected, and thus the operating characteristics of the semiconductor package can be improved.

[0183] However, despite Figure 7 A second molding portion 170 is shown, but if the first molding portion 150 and the second molding portion 170 comprise the same material, their interface may not be distinguishable.

[0184] Furthermore, the inner wall of the first molding portion 150 may be spaced apart from the outer wall of the connecting member 220 by a predetermined horizontal distance. For example, the first molding portion 150 and the connecting member 220 may not be in direct contact with each other and may be spaced apart from each other by a predetermined horizontal distance. For example, the first molding portion 150 may be configured to surround the periphery of the connecting member 220 at a position spaced apart from the connecting member 220 by a predetermined horizontal distance. Therefore, the embodiment can ensure that the second molding portion 170 flows stably in the space corresponding to the aforementioned horizontal distance, and thus can further improve the molding processability and / or molding characteristics of the second molding portion 170.

[0185] At this time, the horizontal distance between the inner wall of the first molding portion 150 and the outer wall of the connecting member 220 can be less than the width of the conductive joint 160 in the horizontal direction. Furthermore, the horizontal distance between the inner wall of the first molding portion 150 and the outer wall of the connecting member 220 can be greater than the width of the through electrode 223 disposed in the connecting member 220 in the horizontal direction. For example, the horizontal distance between the inner wall of the first molding portion 150 and the outer wall of the connecting member 220 can be less than the width of the conductive joint 160 in the horizontal direction and greater than the width of the through electrode 223 of the connecting member 220 in the horizontal direction. Therefore, the embodiment can improve process characteristics while shortening the processing time in forming the second molding portion 170, thereby further improving product yield. Furthermore, the embodiment can solve the problem that the space between the first molding member 150 and the connecting member 220 is not completely filled by the second molding portion 170.

[0186] Figure 8 This is a cross-sectional view illustrating the semiconductor package according to the fourth embodiment, and Figure 9 yesFigure 8 an enlarged sectional view of the region R1.

[0187] Referring to Figure 8 and Figure 9 , the semiconductor package can include a circuit board 100, a connection member 220, semiconductor devices 250 and 255, a first connection part 210, a second connection part 230, and a third connection part 230.

[0188] At this time, the semiconductor package of the fourth embodiment can be different from the semiconductor package of the first embodiment in the arrangement structure of the molding member 150a provided in the circuit board 100. Figure 1

[0189] The molding member 150a can be provided on the first protective layer 140 while molding the conductive joint 160. The first protective layer 140 can include an opening part 141 including a sidewall 142 composed of a first part 142a and a second part 142b having a step. Although omitted in Figure 8 and Figure 9 , the semiconductor package of the fourth embodiment can include a second molding part 170 as illustrated in Figure 8

[0190] In this case, the molding member 150a can not overlap the opening part 141 of the first protective layer 140 in the vertical direction. For example, the molding member 150a can contact a portion of the sidewall 142 of the opening part 141 of the first protective layer 140. For example, the molding member 150a can contact a portion of the step of the sidewall 142 of the first protective layer 140. That is, the molding member 150a can contact the second part 142b of the sidewall 142 of the first protective layer 140 and can not contact the first part 142a. That is, since the sidewall 142 of the first protective layer 140 has the step, the bonding strength between the first protective layer 140 and the molding member 150a can be secured even if the molding member 150a contacts only the second part 142b. Accordingly, the embodiment can reduce the amount of the molding member 150a, thereby reducing the unit price of the product.

[0191] ​​For example, the connection member 220 can have an outer side surface, and a first portion 142a of a sidewall 142 of the opening portion 141 of the first protective layer 140 can be disposed along a circumferential direction of the outer side surface of the connection member 220. In addition, the molding member 150a can include a sidewall 151 that surrounds the outer side surface of the connection member 220 at a position spaced apart from the outer side surface of the connection member 220 by a first horizontal distance W1. The sidewall 151 of the molding member 150a can be positioned farther from the outer side surface of the connection member 220 than the first portion 142a of the sidewall 142 of the first protective layer 140. For example, the sidewall 151 of the molding member 150a can be disposed to be spaced apart from the outer side surface of the connection member 220 by the first horizontal distance W1. In addition, the first portion 142a of the sidewall 142 of the first protective layer 140 can be disposed to be spaced apart from the outer side surface of the connection member 220 by a second horizontal distance. The second horizontal distance can be less than the first horizontal distance W1. For example, the first portion 142a of the sidewall 142 of the first protective layer 140 can be disposed to be closer to the outer side surface of the connection member 220 than the sidewall 151 of the molding member 150a by the second horizontal distance W2.

[0192] In this case, the first horizontal distance W1 can be less than a width of the conductive junction 160 in a horizontal direction. In addition, the first horizontal distance W1 can be greater than a width of the through electrode 223 provided in the connection member 220 in the horizontal direction. When the first horizontal distance W1 is greater than the width of the conductive junction 160 in the horizontal direction, a processing time in a process of additionally molding the second molding portion 170 can increase, and thus a yield in a process in which the second molding portion 170 is molded in a space between the molding member 150a and the connection member 220 can decrease. For example, when the first horizontal distance W1 is greater than the width of the conductive junction 160 in the horizontal direction, a space between the molding member (150a or the first molding portion) and the connection member 220 can not be completely filled with the second molding portion 170. In addition, the first horizontal distance W1 can be greater than a width of the through electrode 223 provided in the connection member 220 in the horizontal direction. For example, the through electrode 223 can refer to a TSV provided in the connection member 220, and the first horizontal distance W1 can be greater than a width of the TSV in the horizontal direction. As another example, the through electrode 223 can refer to a redistribution via electrode provided in the connection member 220, and the first horizontal distance W1 can be greater than a width of the redistribution via electrode in the horizontal direction. When the first horizontal distance W1 is less than the width of the through electrode 223 of the connection member 220 in the horizontal direction, it can deteriorate mold processability in a process of molding the second molding portion 170.

[0193] In addition, the first portion 142a of the sidewall 142 of the first protective layer 140 and the sidewall 151 of the molding member 150a can be spaced apart by a second horizontal distance W2. That is, if the horizontal distance W1 between the molding member 150a and the connection member 220 is too small, it can be impossible to fill the molding liquid in the process of filling the second molding portion 170, and a void can be formed in the second molding portion 170. Accordingly, the embodiment can allow the first portion 142a of the sidewall 142 of the protective layer 140 and the sidewall 151 of the molding member 150a to be spaced apart by the second horizontal distance W2, thereby preventing a void from being formed in the second molding portion 170.

[0194] In addition, the sidewall 142 of the first protective layer 140 can include an overlapping region overlapping the molding member 150a by the second horizontal distance W2 in the vertical direction, and a non-overlapping region protruding toward the connection member 220 from the overlapping region and not overlapping the molding member 150a in the vertical direction. At this time, the non-overlapping region of the sidewall 142 of the first protective layer 140 can guide the injection position of the molding liquid in the process of filling the second molding portion 170, or guide the molding liquid to easily flow into the region between the connection member 220 and the first pad portion 121. In addition, the non-overlapping region of the sidewall 142 of the first protective layer 140 can serve as an alignment key when the molding member 150a is placed, thereby enabling the molding member 150a to more stably mold the conductive bonding portion 160.

[0195] The second horizontal distance W2 can be in the range of 1 µm to 10 µm. If the second horizontal distance W2 is less than 1 µm, a void can be formed in the second molding portion 170, or the non-overlapping region of the sidewall 142 of the first protective layer 140 corresponding to the second horizontal distance W2 can not serve as an alignment key. In addition, if the second horizontal distance W2 exceeds 10 µm, the processing time for filling the second molding portion 170 can increase, thereby causing a decrease in product yield or an increase in product manufacturing cost.

[0196] Figure 10 is a cross-sectional view of a semiconductor package according to a fifth embodiment, Figure 11 is Figure 10 is an enlarged cross-sectional view of a region R1 of Figure 12 is a plan view illustrating a first protective layer and a molding member of Figure 10

[0197] Referring to Figures 10 to 12 , the semiconductor package includes a circuit board 1000, a first connection portion 210, a second connection portion 230, a third connection portion 240, a connection member 220, and semiconductor devices 250 and 255.

[0198] ​The circuit board 1000 includes an insulating layer 1110, a first electrode portion 1120, a second electrode portion 1130, a first pad portion 1121, a second pad portion 1122, a conductive bonding portion 1160, a first protective layer 1140, a second protective layer 1145, and a molding member 1150. Here, the circuit board 1000 of the fifth embodiment can be different from the circuit board of the first embodiment in terms of the structure of the first protective layer 1140 and the structure of the molding member 1150 according to the first protective layer 1140. Thus, the following description will focus on the structure of the first protective layer 1140 and the molding member 1150.

[0199] The outer width of the first protective layer 1140 can be different from the outer width of the insulating layer 1110. Here, the outer width can refer to the horizontal distance between opposite outer side surfaces. For example, the outer width of the first protective layer 1140 can be smaller than the outer width of the insulating layer 1110.

[0200] That is, the outer side surface 1110S of the insulating layer 1110 and the outer side surface 1140S of the first protective layer 1140 can have a step. Further, the outer side surface 1110S of the first protective layer 1140 having the step can contact the molding member 1150. Thus, the contact area between the molding member 1150 and the first protective layer 1140 can be improved. In this way, the embodiments can more stably protect the conductive bonding portion 1160 by the molding member 1150, thereby further improving the physical reliability and / or the electrical reliability of the semiconductor package.

[0201] Further, the embodiments can position the outer side surface of the first protective layer 1140 more inward than the outer side surface 1110S of the insulating layer 1110, thereby preventing warping of the semiconductor package that can occur due to the difference in the coefficient of thermal expansion of the insulating layer 1110 and the first protective layer 1140.

[0202] In addition, the molding member 1150 can be made to contact the outer side surface 1140S of the first protective layer 1140, while contacting the sidewall 1142 of the opening portion 1141 of the first portion 1142a and the second portion 1142b having the step of the first protective layer 1140. Thus, the embodiments can more firmly fix the first protective layer 1140 by the molding member 1150, and minimize deformation of the first protective layer 1140 due to expansion and / or contraction of the first protective layer 1140 caused by thermal cycles. Accordingly, the embodiments can enable the conductive bonding portion 1160 to be more stably bonded.

[0203] In particular, reference is made to Figure 12of (a), the first protective layer 1140 is provided on the insulating layer 1110. At this time, the periphery of the outer side surface 1140S of the first protective layer 1140 does not overlap the periphery of the outer side surface 1110S of the insulating layer 1110 in the vertical direction. For example, the periphery of the outer side surface 1110S of the insulating layer 1110 can be provided more outward than the outer side surface 1140S of the first protective layer 1140.

[0204] Further, referring to Figure 12 of (b), the molded member 1150 is provided on the insulating layer 1110 and the first protective layer 1140. The molded member 1150 can surround the outer side surface 1140S of the first protective layer 1140 having a step, and can be in contact with the side wall 1142 of the opening portion 1141. Thus, the contact area between the first protective layer 1140 and the molded member 1150 can be further improved.

[0205] Figure 13 is a cross-sectional view showing a semiconductor package according to a sixth embodiment. For example, Figure 13 is an enlarged cross-sectional view of a region R1 of Figure 10 according to the sixth embodiment.

[0206] Referring to Figure 13 , the semiconductor package of the sixth embodiment can differ from the semiconductor package of the fifth embodiment in that the outer side surface 1140Sa of the first protective layer 1140a is inclined. Thus, the outer side surface 1140Sa of the first protective layer 1140a will be described below.

[0207] The outer side surface 1140Sa of the first protective layer 1140a can have a step.

[0208] For example, the outer side surface 1140Sa of the first protective layer 1140a can include a first portion 1140Sa1 connected to a lower surface of the first protective layer 1140a and having a step from the outer side surface 1110S of the insulating layer 1110. Further, the outer side surface 1140Sa of the first protective layer 1140a can include a second portion 1140Sa2 connected to an upper surface of the first protective layer 1140a and having a step from the first portion 1140Sa1.

[0209] That is, the outer side surface 1140Sa of the first protective layer 1140a can include a first portion 1140Sa1 and a second portion 1140Sa2 having a step, thereby minimizing thermal deformation due to thermal cycles caused by expansion and / or contraction of the first protective layer 1140a. In addition, embodiments can further increase the contact area between the molding member 1150 and the outer side surface 1140Sa of the first protective layer 1140a, thereby allowing the molding member 1150 to be more stably fixed on the first protective layer 1140a. Accordingly, embodiments can allow the conductive joint 1160 to be more stably protected by the molding member 1150, thereby enabling more stable power and / or power supply to the semiconductor devices 250 and 255. Accordingly, the semiconductor devices 250 and 255 can operate more stably.

[0210] On the other hand, when the circuit board having the above-described characteristics of the present application is used in an IT device or a home appliance such as a smart phone, a server computer, a TV, etc., a function such as signal transmission or power supply can be stably performed. For example, when the circuit board having the characteristics of the present application performs a semiconductor packaging function, the circuit board can be used to safely protect a semiconductor chip from external moisture or contaminants, or alternatively, can solve a problem of a leakage current, an electrical short between terminals supplied to the semiconductor chip, and an electrical open of the terminals. In addition, when responsible for a signal transmission function, a noise problem can be solved. In this way, the circuit board having the above-described characteristics of the present application can maintain a stable function of the IT device or the home appliance, so that the entire product and the circuit board to which the present application is applied can achieve functional unification or technical interlocking with each other.

[0211] When the circuit board having the above-described characteristics of the present application is used in a transport means such as a vehicle, a problem of distortion of a signal transmitted to the transport means can be solved, or alternatively, safety of the transport means can be further improved by safely protecting a semiconductor chip controlling the transport means from the outside and solving a problem of a leakage current or an electrical short between terminals supplied to the semiconductor chip or an electrical open of the terminals. Accordingly, the transport means and the circuit board to which the present application is applied can achieve functional integrity or technical interlocking with each other.

[0212] The characteristics, structures, and effects described in the above-described embodiments are included in at least one embodiment, but are not limited to one embodiment. In addition, the features, structures, and effects, etc. shown in each embodiment can even be combined or modified with respect to other embodiments by one of ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that what is related to such a combination and such a modification is included in the scope of the embodiments.

[0213] The above description has focused on embodiments, but is merely illustrative and not limiting of embodiments. As those skilled in the art will understand, various modifications and adaptations in the embodiments can occur to one skilled in the art without departing from the essential characteristics of the embodiments. For example, each component specifically represented in the embodiments can be modified and implemented. Furthermore, it should be understood that differences related to such changes and applications are encompassed within the scope of the embodiments defined in the appended claims.

Claims

1. A circuit board comprising: a build-up structure; a connection member provided on the build-up structure; a molded member provided on the build-up structure and surrounding a side portion of the connection member; and a conductive joint through the molded member, wherein the connection member includes a through electrode through at least a portion of the connection member in a vertical direction, wherein a thickness of the conductive joint in the vertical direction is greater than a thickness of the through electrode in the vertical direction, and wherein a height of the conductive joint is greater than a height of the connection member.

2. The circuit board according to claim 1, wherein the build-up structure includes: build-up insulating layers stacked in a vertical direction, a land portion provided on the build-up insulating layers, and a protective layer provided on the build-up insulating layers and including an opening portion overlapping the land portion in a vertical direction.

3. The circuit board according to claim 2, wherein a side wall of the protective layer forming the opening portion has a step, and wherein the molded member contacts at least a portion of the step of the side wall of the protective layer.

4. The circuit board according to claim 3, wherein the side wall of the protective layer having the step is provided along a circumferential direction of an outer side surface of the connection member.

5. The circuit board according to claim 3, wherein the side wall of the protective layer includes a first portion adjacent to a lower surface of the protective layer; and a second portion provided on the first portion and having a step from the first portion.

6. The circuit board according to claim 5, wherein at least one of the first portion and the second portion has a curved surface.

7. The circuit board according to claim 5, wherein a width of the opening portion of the protective layer in a horizontal direction in the first portion is greater than a width in a horizontal direction in the second portion.

8. The circuit board according to claim 5, wherein a width of the opening portion of the protective layer in a horizontal direction in the first portion is less than a width in a horizontal direction in the second portion.

9. The circuit board according to claim 5, wherein the molded member overlaps at least a portion of the opening portion of the protective layer in a vertical direction, and contacts each of the first portion and the second portion of the side wall.

10. The circuit board according to claim 5, wherein the molded member does not overlap the opening portion of the protective layer in a vertical direction, and contacts a portion of the second portion of the side wall. ​

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