LED device, manufacturing method thereof and display device

Abstract

The embodiment of the invention provides an LED device and a manufacturing method thereof and a display device.The LED device comprises an LED chip, a blocking dam, a color conversion layer and a packaging layer, the LED chip comprises a light-emitting body and a first electrode and a second electrode which are located on one side of the light-emitting body, the blocking dam, the first electrode and the second electrode are arranged on the same side, and the blocking dam is located between the first electrode and the second electrode; the blocking dam is provided with a through hole penetrating through the blocking dam along the height direction of the LED device; the packaging layer is arranged on the side, away from the LED chip, of the color conversion layer, the packaging layer comprises a first via hole and a second via hole, the first via hole is used for exposing the first electrode, and the second via hole is used for exposing the second electrode. The light rays emitted by the luminous body of the LED device can directly reach the color conversion layer without passing through other film layers such as air, so that the loss of the LED light rays can be further reduced, and the intensity of emergent light is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to an LED device, a manufacturing method thereof and a display device. BACKGROUND

[0002] Micro Light Emitting Diode (Micro-LED) display panel can reach nanosecond level in response time, which is nearly 1000 times faster than OLED display panel. In addition, the Micro Light Emitting Diode display panel also has the advantages of high contrast and wide color gamut, and therefore, the Micro Light Emitting Diode display panel is increasingly concerned by the display market, such as various high-end markets like television, augmented reality (AR), virtual reality (VR) and wearable devices. In addition, the Micro Light Emitting Diode display panel is also widely used in ultra-thin backlight projects.

[0003] In the ultra-thin backlight project, in order to realize the white light conversion of the Micro Light Emitting Diode, a color conversion layer is arranged on the glass side, however, the Micro Light Emitting Diode device with such structure inevitably has light efficiency loss, resulting in weakened outgoing light intensity. SUMMARY

[0004] The purpose of the embodiments of the present application is to provide an LED device, a manufacturing method thereof and a display device, which are used to reduce the light efficiency loss of the LED device and improve the outgoing light intensity. The specific technical solutions are as follows:

[0005] The first aspect of the present application provides an LED device, comprising: an LED chip, the LED chip comprising a light emitting body and a first electrode and a second electrode located on one side of the light emitting body; a blocking dam, the blocking dam being arranged on the same side of the first electrode and the second electrode and located between the first electrode and the second electrode, the blocking dam having a through hole penetrating through the blocking dam along the height direction of the LED device; a color conversion layer, the color conversion layer being filled in the through hole; an encapsulation layer, the encapsulation layer being arranged on the side of the color conversion layer away from the LED chip, the encapsulation layer comprising a first via hole and a second via hole, the first via hole being used to expose the first electrode, and the second via hole being used to expose the second electrode.

[0006] In some embodiments, the LED device further comprises a light-shielding metal layer located on a side of the encapsulation layer away from the LED chip, the light-shielding metal layer comprises a first conductive part, a second conductive part, and a light-out part located between the first conductive part and the second conductive part, the light-out part has a light-out hole penetrating through the light-out part along the height direction, the light-out hole in the orthographic projection of the light-emitting body overlaps with the through hole in the orthographic projection of the light-emitting body or the light-out hole in the orthographic projection of the light-emitting body is located within the through hole in the orthographic projection of the light-emitting body, the first conductive part is electrically connectable with the first electrode, and the second conductive part is electrically connectable with the second electrode.

[0007] In some embodiments, the light-out part is integrally arranged with the first conductive part or the second conductive part.

[0008] In some embodiments, in a direction parallel to the encapsulation layer, an area of the first conductive part is greater than an area of the first electrode, and an area of the second conductive part is greater than an area of the second electrode.

[0009] In some embodiments, the LED device further comprises a first conductive connecting part and a second conductive connecting part, the first conductive connecting part is used to fill the first via hole, the first conductive part is electrically connected with the first electrode through the first conductive connecting part, the second conductive connecting part is used to fill the second via hole, and the second conductive part is electrically connected with the second electrode through the second conductive connecting part.

[0010] In some embodiments, a material for manufacturing the first conductive connecting part and the second conductive connecting part is one of copper, molybdenum, aluminum, silver, or gold, and a material for manufacturing the light-shielding metal layer is one of copper, molybdenum, aluminum, silver, or gold.

[0011] In some embodiments, the material for manufacturing the first conductive connecting part, the second conductive connecting part, and the light-shielding metal layer is the same.

[0012] In some embodiments, the first conductive part comprises a first body part and a first connecting part, the first body part is located on a side of the encapsulation layer away from the LED chip, the first connecting part is located in the first via hole, and the first connecting part is in contact with the first electrode, and the second conductive part comprises a second body part and a second connecting part, the second body part is located on a side of the encapsulation layer away from the LED chip, the second connecting part is located in the second via hole, and the second connecting part is in contact with the second electrode.

[0013] In some embodiments, along the height direction of the LED device, a height of the blocking dam is 5-10 um.

[0014] In some embodiments, the color conversion layer is made of quantum dot material or fluorescent material.

[0015] In some embodiments, the encapsulation layer comprises a first inorganic layer, an organic layer and a second inorganic layer arranged in sequence in a direction away from the LED chip.

[0016] The second aspect of the present application provides a manufacturing method of an LED device, for manufacturing the above-mentioned LED device, comprising the following steps:

[0017] Providing an LED chip, the LED chip comprising a light emitting body and a first electrode and a second electrode located at one side of the light emitting body;

[0018] On the side where the first electrode and the second electrode are located, a barrier dam is manufactured between the first electrode and the second electrode, the barrier dam having a through hole penetrating through the barrier dam in the height direction of the LED device;

[0019] A color conversion layer is manufactured in the through hole;

[0020] An encapsulation layer is manufactured on the side of the color conversion layer away from the LED chip, and a first via hole and a second via hole are opened in the encapsulation layer, the first via hole being used to expose the first electrode, and the second via hole being used to expose the second electrode.

[0021] The third aspect of the present application provides a display device, comprising a driving backboard and the above-mentioned LED device, the LED device being arranged in an array on the driving backboard.

[0022] The embodiments of the present application have the following beneficial effects:

[0023] The LED device and the manufacturing method thereof and the display device provided by the embodiments of the present application, wherein the barrier dam is used to define the light emitting range of the LED, prevent light side leakage, and the color conversion layer is arranged in the barrier dam, so that the light directly reaches the color conversion layer without passing through air or other film layers, which can further reduce the loss of LED light, thereby improving the outgoing light intensity.

[0024] Of course, implementing any product or method of the present application does not necessarily require achieving all the advantages mentioned above at the same time. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiment or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and other embodiments can also be obtained by those skilled in the art according to these drawings.

[0026] Figure 1 This is a schematic diagram of the structure of an LED device provided in one embodiment of the present application;

[0027] Figure 2 This is a schematic diagram of the structure of the LED device provided in one embodiment of this application in another embodiment;

[0028] Figure 3 This is a partial top view of an LED device in one embodiment;

[0029] Figure 4 for Figure 2 Top view of section A;

[0030] Figure 5 A schematic diagram of the structure of the LED device provided in another embodiment of this application;

[0031] Figure 6 This is a schematic diagram of the encapsulation layer provided in an embodiment of this application;

[0032] Figure 7 This is a schematic diagram of step S2 in the fabrication of an LED device.

[0033] Figure 8 This is a schematic diagram of step S3 in the fabrication of an LED device.

[0034] Figure 9 This is a schematic diagram of step S4 in the fabrication of an LED device.

[0035] Figure 10 This is a schematic diagram of step S5 in the fabrication of an LED device.

[0036] The attached diagram is described below:

[0037] LED chip 1; light-emitting body 11; first electrode 12; second electrode 13;

[0038] Barrier 2; Through-hole 21; Height h of the barrier dam;

[0039] Color transfer layer 3;

[0040] Encapsulation layer 4; First via 41; Second via 42; First inorganic layer 43; Organic layer 44; Second inorganic layer 45;

[0041] Light-shielding metal layer 5; first conductive part 51; first body part 511; first connecting part 512; second conductive part 52; second body part 521; second connecting part 522; light-emitting part 53; light-emitting hole 531;

[0042] First conductive connection part 6; second conductive connection part 7; height direction H. Detailed Implementation

[0043] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art based on this application are within the scope of protection of this application.

[0044] Miniature light-emitting diodes (LEDs) are increasingly widely used due to their advantages such as short response time, high contrast, and wide color gamut, especially in ultra-thin backlight projects. However, in traditional ultra-thin backlight projects, a color transfer layer 3 is typically fabricated on the glass side to achieve white light conversion of the miniature LEDs. This method results in luminous efficiency loss during the process of LED light illuminating the color transfer layer 3, reducing the light output intensity and thus increasing the power consumption of the display product.

[0045] To address the aforementioned technical problems, embodiments of this application provide an LED device, such as a Micro-LED or a Mini-LED (Mini Light Emitting Diode), for example... Figure 1 As shown, the LED device includes an LED chip 1, a barrier dam 2, a color transfer layer 3, and an encapsulation layer 4. The LED chip 1 includes a light-emitting body 11 and a first electrode 12 and a second electrode 13 located on one side of the light-emitting body 11. The barrier dam 2 is disposed on the same side as the first electrode 12 and the second electrode 13, and is located between the first electrode 12 and the second electrode 13. The barrier dam 2 has a through-hole 21 extending through the barrier dam 2 along the height direction H of the LED device. The color transfer layer 3 fills the through-hole 21. The encapsulation layer 4 is disposed on the side of the color transfer layer 3 away from the LED chip 1. The encapsulation layer 4 includes a first via 41 and a second via 42. The first via 41 exposes the first electrode 12, and the second via 42 exposes the second electrode 13.

[0046] By setting a barrier dam 2 between the first electrode 12 and the second electrode 13, the barrier dam 2 is used to limit the light emission range of the LED and prevent light leakage. The color transfer layer 3 is set inside the barrier dam 2, so that the light can directly reach the color transfer layer 3 without passing through other film layers such as air, which can further reduce the loss of LED light and thus improve the intensity of emitted light. The barrier dam 2 is set on the same side as the first electrode 12 and the second electrode 13, and the color transfer layer 3 is filled in the through hole 21. This can effectively utilize the space between the first electrode 12 and the second electrode 13. The color transfer layer 3 fills the blank area between the first electrode 12 and the second electrode 13. On the one hand, the light of the LED chip 1 can reach the color transfer layer 3 without passing through the air layer, reducing the light efficiency loss. On the other hand, it can minimize the increase in the size of the LED chip 1.

[0047] The barrier dam 2 can be a light-blocking dam or a reflective dam. For example, the barrier dam 2 can be made of a black material, such as black ink or other black organic materials. Its main function is to block light, limiting light leakage and thus better defining the area from which light is emitted. Alternatively, the barrier dam 2 can be made of a reflective material, such as organic reflective materials, primarily reflecting light back onto the material hitting the barrier dam 2, preventing light leakage, thus both increasing light intensity and defining the area from which light is emitted.

[0048] The barrier dam 2 can be formed by applying adhesive and exposing it to sunlight.

[0049] The first via 41 and the second via 42 can be fabricated using an etching process. The opening size of the first via 41 and the second via 42 can be determined by comprehensively considering the etching process, etching cost, and electrical connection stability, to meet the requirements. The first electrode 12 is electrically connected to other components through the first via 41, and the second electrode 13 is electrically connected to other components through the second via 42.

[0050] like Figure 2 As shown, in some embodiments, the LED device further includes a light-shielding metal layer 5, which is located on the side of the encapsulation layer 4 away from the LED chip 1. The light-shielding metal layer 5 includes a first conductive part 51, a second conductive part 52, and a light-emitting part 53 located between the first conductive part 51 and the second conductive part 52. The light-emitting part 53 has a light-emitting hole 531 that penetrates the light-emitting part 53 along the height direction H. The orthographic projection of the light-emitting hole 531 on the light-emitting body 11 overlaps with the orthographic projection of the through hole 21 on the light-emitting body 11, or the orthographic projection of the light-emitting hole 531 on the light-emitting body 11 is located within the orthographic projection of the through hole 21 on the light-emitting body 11. The first conductive part 51 can be electrically connected to the first electrode 12, and the second conductive part 52 can be electrically connected to the second electrode 13.

[0051] In this embodiment, the metal light-shielding layer is located on the side of the encapsulation layer 4 away from the LED chip 1, that is, along the light emission direction, the metal light-shielding layer is above the blocking dam 2 and the color conversion layer 3. The metal light-shielding layer plays a role in shielding light and reducing light leakage at the edge. The light-emitting part 53 has a light-emitting hole 531, which is arranged opposite to the through hole 21 along the height direction H. The light-emitting area of ​​the light-emitting hole 531 is less than or equal to the light-emitting area of ​​the through hole 21, thus further defining the light-emitting area. The metal light-shielding layer also includes a first conductive part 51 and a second conductive part 52. The first conductive part 51 is electrically connected to the first electrode 12, and the second conductive part 52 is electrically connected to the second electrode 13, thus bringing out the electrodes of the LED chip 1. This facilitates the electrical connection of the first electrode 12 and the second electrode 13 with other components. Furthermore, the first conductive part 51 and the second conductive part 52 can be fabricated in the same layer as the light-emitting part 53, which helps to simplify the manufacturing process.

[0052] In some embodiments, the light-emitting portion 53 is integrally disposed with the first conductive portion 51 or the second conductive portion 52. That is, the light-emitting portion 53 can be integrally disposed with the first conductive portion 51, such as... Figure 3 As shown, it can also be integrally disposed with the second conductive part 52, such as... Figure 4 As shown. Taking the light-emitting part 53 and the first conductive part 51 as an example, the integrated setting means that the light-emitting part 53 and the first conductive part 51 are continuously arranged without any break. This can increase the light-shielding area and simplify the installation process.

[0053] In some embodiments, such as Figure 2 As shown, in the direction parallel to the encapsulation layer 4, the area of ​​the first conductive portion 51 is larger than the area of ​​the first electrode 12, and the area of ​​the second conductive portion 52 is larger than the area of ​​the second electrode 13. By increasing the area of ​​the first conductive portion 51 and the second conductive portion 52, the resistance of the first electrode 12 and the second electrode 13 can be reduced, thereby reducing the power consumption of the LED chip 1. Furthermore, by increasing the area of ​​the first conductive portion 51 and the second conductive portion 52, the light-shielding area of ​​the metal light-shielding layer can also be increased, improving the light-shielding effect.

[0054] In some embodiments, such as Figure 2 As shown, the LED device also includes a first conductive connection portion 6 and a second conductive connection portion 7. The first conductive connection portion 6 is used to fill the first via 41, and the first conductive portion 51 is electrically connected to the first electrode 12 through the first conductive connection portion 6. The second conductive connection portion 7 is used to fill the second via 42, and the second conductive portion 52 is electrically connected to the second electrode 13 through the second conductive connection portion 7.

[0055] In this embodiment, the first through-hole 41 is filled by the first conductive connection part 6 and the second through-hole 42 is filled by the second conductive connection part 7, so that the side of the encapsulation layer 4 away from the LED chip 1 has no unevenness and the overall surface is flat, which facilitates the subsequent preparation of the film layer and makes it easier to realize the electrical connection between the first conductive part 51 and the first conductive connection part 6, and between the second conductive part 52 and the second conductive connection part 7.

[0056] Optionally, the first conductive connection part 6 and the second conductive connection part 7 are made of one of copper, molybdenum, aluminum, silver or gold; the light-shielding metal layer 5 is made of one of copper, molybdenum, aluminum, silver or gold.

[0057] Metals such as copper, molybdenum, aluminum, silver, and gold all have good electrical conductivity and are suitable as conductive materials. In addition, metals such as copper, molybdenum, aluminum, silver, and gold are opaque and can serve as light-shielding materials.

[0058] The first conductive connection part 6 and the second conductive connection part 7 can be manufactured by electroplating or chemical plating.

[0059] The manufacturing materials of the first conductive connection part 6, the second conductive connection part 7 and the light-blocking metal layer 5 can be the same or different.

[0060] In some embodiments, as shown in FIG. 1, the first conductive part 51 includes a first body part 511 and a first connection part 512, the first body part 511 is located on the side of the encapsulation layer 4 away from the LED chip 1, and the first connection part 512 is located in the first via hole 41 and contacts the first electrode 12; the second conductive part 52 includes a second body part 521 and a second connection part 522, the second body part 521 is located on the side of the encapsulation layer 4 away from the LED chip 1, and the second connection part 522 is located in the second via hole 42 and contacts the second electrode 13. Figure 5

[0061] Unlike the embodiment shown in FIG. 1, in the present embodiment, the first conductive part 51 and the second conductive part 52 are integrally formed, which is beneficial to reduce the contact resistance between the first body part 511 and the first connection part 512 and the contact resistance between the second body part 521 and the second connection part 522, thereby reducing the power consumption of the LED device. Figure 2

[0062] The first conductive part 51 includes a first body part 511 and a first connection part 512, and the first conductive part 51 is directly in contact and electrically connected with the first electrode 12; the second conductive part 52 includes a second body part 521 and a second connection part 522, and the second conductive part 52 is directly in contact and electrically connected with the second electrode 13. The first conductive part 51 and the second conductive part 52 can be formed by a one-time deposition and etching process, which simplifies the setting process of the first conductive part 51 and the second conductive part 52.

[0063] In some embodiments, as shown in FIG. 1, along the height direction H of the LED device, the height h of the blocking dam is 5-10 um, such as 5 um, 6 um, 8 um, 9 um, 10 um, etc. Figure 1 The height direction H of the LED device is also the light-emitting direction, in this direction, the height h of the blocking dam is greater than or equal to 5 um, so that the blocking dam 2 plays a certain shielding effect on the light when the light passes through the color conversion layer 3, which can prevent light leakage and further reduce the loss of light efficiency. In addition, the blocking dam 2 can also limit the light-emitting area by shielding the light.

[0064] It should be noted that the color conversion layer 3 is arranged in the blocking dam 2, and the height of the color conversion layer 3 depends on the height h of the blocking dam, and the height of the color conversion layer 3 does not exceed the height h of the blocking dam, so the blocking dam 2 can prevent light leakage.

[0065]

[0066] ​​​Therefore, the height h of the blocking dam is greater than or equal to 5µm, which also means that the height of the color transfer layer 3 is greater than or equal to 5µm. A height of 5µm or greater than 5µm for the color transfer layer 3 ensures both the light-shielding effect of the blocking dam 2 and the conversion effect of the color transfer layer 3. However, considering the need for miniaturization of LED devices, the height h of the blocking dam should not be too large; generally, the height h of the blocking dam is less than or equal to 10µm.

[0067] In some embodiments, the color transfer layer 3 is made of quantum dot material or fluorescent material.

[0068] Quantum dots are nanoscale semiconductors. By applying a specific electric field or light pressure to these nanoscale semiconductor materials, they emit light of a particular frequency. The frequency of the emitted light changes with the size of the semiconductor, thus the color of the emitted light can be controlled by adjusting the size of the nanoscale semiconductor. For example, to emit white light, quantum dots of different colors can be mixed together to achieve a pure white light effect. White light emitted from quantum dots features high luminance, high color saturation, and low power consumption. When applied to display products, it can improve display effects and color reproduction. The quantum dot layer can be formed using methods such as encapsulation or inkjet printing, which allows for control over the thickness of the quantum dot layer.

[0069] As a luminescent material, phosphor's brightness is one of its most prominent advantages. Due to its structure, phosphor allows for better excitation of photons, resulting in high brightness that is easily observed with the naked eye. This high-brightness luminescence makes phosphors widely used in LED lights, highlighters, and other lighting fixtures. Furthermore, phosphor luminescence also boasts advantages such as good stability, rich colors, and environmental safety.

[0070] There are several methods to achieve white light emission using phosphors. The first method involves coating a blue LED chip 1 with a yellow phosphor that can be excited by blue light. The blue light emitted by the chip and the yellow light emitted by the phosphor complement each other to form white light. The second method involves coating a blue LED chip 1 with green and red phosphors. White light is obtained by combining the blue light emitted by the chip with the green and red light emitted by the phosphors. The third method involves coating a violet or ultraviolet LED chip 1 with phosphors of three or more primary colors. The long-wavelength ultraviolet light (370nm-380nm) or violet light (380nm-410nm) emitted by the chip excites the phosphors, thus achieving white light emission. The appropriate method can be selected based on different requirements such as color rendering index and luminous efficiency.

[0071] In some embodiments, such as Figure 6 As shown, the encapsulation layer 4 includes a first inorganic layer 43, an organic layer 44, and a second inorganic layer 45, which are sequentially arranged along the direction away from the LED chip 1.

[0072] The first inorganic layer 43 and the second inorganic layer 45 are used for blocking water and oxygen, and the organic layer 44 is used for leveling. By arranging two inorganic layers, the packaging effect of the packaging layer 4 can be improved, thereby protecting the internal color conversion layer 3. In addition, by arranging the organic layer 44 between the first inorganic layer 43 and the second inorganic layer 45, the leveling effect of the organic layer 44 can effectively fill the pores between the first inorganic layer 43 and increase the adhesion effect between the organic layer 44 and the first inorganic layer 43, thereby further improving the packaging effect of the packaging layer 4. In addition, the leveling effect of the organic layer 44 can also improve the surface flatness of the packaging layer 4.

[0073] The first inorganic layer 43 is made of one or a combination of SiN x , SiO X , SiON and Al2O3, and the organic layer 44 is made of one or a combination of polyvinyl alcohol, polyurethane acrylate polymer and polyimide resin. The second inorganic layer 45 is made of one or a combination of SiN x , SiO X , SiON and Al2O3.

[0074] The first inorganic layer 43 and the second inorganic layer 45 can be made of the same material or different materials. For example, the first inorganic layer 43 is a SiN x layer, and the second inorganic layer 45 is a SiO X layer, because the SiO X layer has better stability.

[0075] As shown in Figure 6 , the thickness of the organic layer 44 can be less than the thickness of the first inorganic layer 43 and the second inorganic layer 45, thereby reducing the overall thickness of the packaging layer 4.

[0076] It should be noted that when the first inorganic layer 43 is a combination of two or three materials of SiN x , SiO X , SiON and Al2O3, it can be understood that the first inorganic layer 43 is a laminated structure, i.e., the first inorganic layer 43 can be a two-layer laminated structure or a three-layer laminated structure.

[0077] The second aspect of the present application also provides a manufacturing method of an LED device, which is used to manufacture the above-mentioned LED device, and includes the following steps:

[0078] S1: providing an LED chip 1, the LED chip 1 including a light-emitting body 11 and a first electrode 12 and a second electrode 13 located on one side of the light-emitting body 11.

[0079] S2: On the side where the first electrode 12 and the second electrode 13 are located, a barrier dam 2 is made between the first electrode 12 and the second electrode 13, the barrier dam 2 has a through hole 21 penetrating the barrier dam 2 along the LED device height direction H, as shown in Figure 7 .

[0080] S3: The color conversion layer 3 is made in the through hole 21, as shown in Figure 8 .

[0081] S4: The packaging layer 4 is made on the side of the color conversion layer 3 away from the LED chip 1, and the first via hole 41 and the second via hole 42 are opened in the packaging layer 4, the first via hole 41 is used to expose the first electrode 12, and the second via hole 42 is used to expose the second electrode 13, as shown in Figure 9 .

[0082] The barrier dam 2 is arranged between the first electrode 12 and the second electrode 13, which can effectively utilize the space between the electrode and the second electrode 13. The color conversion layer 3 is filled in the through hole 21, which is equivalent to that the color conversion layer 3 is at least partially filled in the blank area between the first electrode 12 and the second electrode 13. The part filled in the blank area between the first electrode 12 and the second electrode 13 does not increase the size of the LED chip 1, so it is beneficial to reduce the size of the LED chip 1. On the other hand, by arranging the barrier dam 2 between the first electrode 12 and the second electrode 13, the barrier dam 2 is used to define the LED light emitting range and prevent light from leaking laterally. The color conversion layer 3 is arranged in the barrier dam 2, so that the light directly reaches the color conversion layer 3 without passing through air or other film layers, which can further reduce the loss of LED light and improve the intensity of the emitted light.

[0083] The following steps are further included after step S4:

[0084] Step S5: Electroplating or electroless plating is performed to form the first conductive connection part 6 and the second conductive connection part in the first via hole 41 and the second via hole 42. The first electrode 12 and the second electrode 13 are led out by arranging the first conductive connection part 6 and the second conductive connection part, which facilitates the electrical connection between the LED chip 1 and other components, as shown in Figure 10 .

[0085] Step S6: A metal layer is deposited on the side of the packaging layer 4 away from the LED chip 1, the metal layer is exposed and etched to obtain a metal light shielding layer, the metal light shielding layer includes a first conductive part 51, a second conductive part 52 and a light emitting part 53, the light emitting part 53 includes a light emitting hole 531, the light emitting hole 531 is in the orthographic projection of the light emitting body 11 and the orthographic projection of the through hole 21 in the light emitting body 11 overlaps or the light emitting hole 531 is in the orthographic projection of the light emitting body 11 and the orthographic projection of the through hole 21 in the light emitting body 11 is located in, which can be referred to back to Figure 2 .

[0086] The first conductive part 51 is electrically connected with the first electrode 12 through the first conductive connection part 6, the second conductive part 52 is electrically connected with the second electrode 13 through the second conductive connection part, and the light emitting area of the light emitting hole 531 of the light emitting part 53 is less than or equal to the light emitting area of the through hole 21, so as to further limit the range of the light emitting light.

[0087] The metal light shielding layer can be made on the packaging layer 4 by a vacuum evaporation process, and then the desired patterned structure of the metal light shielding layer is obtained by an exposure and etching process.

[0088] The third aspect of the present application provides a display device, which comprises a driving backboard and the LED device described above, and the LED device array is arranged on the driving backboard.

[0089] The LED device in the embodiment of the present application sets the blocking dam 2 between the first electrode 12 and the second electrode 13, the blocking dam 2 is used to limit the LED light emitting range and prevent light from side leakage, and the color conversion layer 3 is arranged in the blocking dam 2, so that the light directly reaches the color conversion layer 3 without passing through air or other film layers, which can further reduce the loss of LED light and improve the intensity of the emitted light. The driving backboard is used to drive the LED chip 1 to emit light according to the control condition. The first electrode 12 and the second electrode 13 of the LED chip 1 are bonded with the electrode pads on the driving substrate.

[0090] The display device can be applied to a flexible electronic device to realize technologies such as Augmented Reality (AR), Virtual Reality (VR), Extended Reality (XR), Mixed Reality (MR), etc. Illustratively, the display device can be a projection part of an electronic device, such as a projector, a Head Up Display (HUD), etc.; the display device can also be a display part of an electronic device, such as a smart phone, a smart watch, a notebook computer, a tablet computer, a driving recorder, a navigator, a head-mounted device, etc. any device with display function.

[0091] It is to be noted that, as used in this document, the term "indicates a relationship of, such as first and second, is merely used to distinguish one entity or action from another entity or action, and does not necessarily require or imply that there is any such actual relationship or order between the entities or actions. Also, the terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element preceded by "comprises a" does not, without more limitations, preclude the existence of additional identical elements in the process, method, article, or apparatus that comprises the recited element.

[0092] Each of the embodiments in the specification is described in a relevant manner, and the same or similar parts between the embodiments can be referred to each other. Each of the embodiments focuses on the difference from other embodiments.

[0093] The above only describes the preferred embodiments of the present application, and is not intended to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An LED device, characterized by, The LED device comprises: an LED chip comprising a light-emitting body and a first electrode and a second electrode located on one side of the light-emitting body; a blocking dam located on the same side of the first electrode and the second electrode and between the first electrode and the second electrode, the blocking dam having a through hole penetrating the blocking dam along the height direction of the LED device; a color conversion layer filled in the through hole; a packaging layer located on the side of the color conversion layer away from the LED chip, the packaging layer comprising a first via and a second via, the first via being used to expose the first electrode, and the second via being used to expose the second electrode.

2. The LED device of claim 1, wherein, The LED device further comprises a light-shielding metal layer located on the side of the packaging layer away from the LED chip, the light-shielding metal layer comprising a first conductive part, a second conductive part, and a light-emitting part located between the first conductive part and the second conductive part, the light-emitting part having a light-emitting hole penetrating the light-emitting part along the height direction, the light-emitting hole being overlapped with the through hole in the orthographic projection of the light-emitting body or the light-emitting hole being located in the through hole in the orthographic projection of the light-emitting body, the first conductive part being capable of being electrically connected with the first electrode, and the second conductive part being capable of being electrically connected with the second electrode.

3. The LED device of claim 2, wherein, The light-emitting part is integrally arranged with the first conductive part or the second conductive part.

4. The LED device of claim 2, wherein, In the direction parallel to the packaging layer, the area of the first conductive part is greater than the area of the first electrode, and the area of the second conductive part is greater than the area of the second electrode.

5. The LED device of claim 2, wherein, The LED device further comprises a first conductive connecting part and a second conductive connecting part, the first conductive connecting part being used to fill the first via, the first conductive part being electrically connected with the first electrode through the first conductive connecting part, and the second conductive connecting part being used to fill the second via, the second conductive part being electrically connected with the second electrode through the second conductive connecting part.

6. The LED device of claim 5, wherein, The manufacturing material of the first conductive connecting part and the second conductive connecting part is one of copper, molybdenum, aluminum, silver, or gold, and the manufacturing material of the light-shielding metal layer is one of copper, molybdenum, aluminum, silver, or gold.

7. The LED device of claim 6, wherein, The manufacturing material of the first conductive connecting part, the second conductive connecting part, and the light-shielding metal layer is the same.

8. The LED device of claim 2, wherein, The first conductive part comprises a first body part and a first connecting part, the first body part being located on the side of the packaging layer away from the LED chip, and the first connecting part being located in the first via and being in contact with the first electrode; and the second conductive part comprises a second body part and a second connecting part, the second body part being located on the side of the packaging layer away from the LED chip, and the second connecting part being located in the second via and being in contact with the second electrode.

9. The LED device of any of claims 1-8, wherein, Along the height direction of the LED device, the height of the blocking dam is 5-10 um.

10. The LED device of any of claims 1-8, wherein, The color conversion layer is made of quantum dot material or fluorescent material.

11. The LED device of any of claims 1-8, wherein, The encapsulation layer comprises a first inorganic layer, an organic layer and a second inorganic layer arranged in sequence in a direction away from the LED chip.

12. A method for manufacturing an LED device, used to manufacture the LED device according to any one of claims 1-11, characterized in that, The method comprises the following steps: An LED chip is provided, which comprises a light emitting body and a first electrode and a second electrode located on one side of the light emitting body; A barrier dam is made between the first electrode and the second electrode on the side where the first electrode and the second electrode are located, the barrier dam having a through hole penetrating through the barrier dam in the height direction of the LED device; A color conversion layer is made in the through hole; An encapsulation layer is made on the side of the color conversion layer away from the LED chip, and a first via hole and a second via hole are opened in the encapsulation layer, the first via hole being used to expose the first electrode, and the second via hole being used to expose the second electrode.

13. A display device comprising: The LED device array is arranged on the driving backboard.

Images