Multifunctional synaptic transistor with organic ternary heterogeneous coupling structure and manufacturing method thereof

Abstract

The invention discloses a multifunctional synaptic transistor with an organic ternary heterogeneous coupling structure and a manufacturing method thereof, and belongs to the field of organic optical synaptic transistors. The multifunctional synaptic transistor comprises an electrode, a substrate, a gate dielectric layer and an organic PN junction, the organic PN junction comprises an N-type organic semiconductor layer and a P-type organic semiconductor layer stacked on the N-type organic semiconductor layer, a chiral COF layer with the area smaller than that of the P-type organic semiconductor layer is arranged on the P-type organic semiconductor layer, the electrode comprises a source electrode and a drain electrode, and the source electrode and the drain electrode are both in contact with the chiral COF layer and the P-type organic semiconductor layer. Through optical pulse input information, polarization and multi-wavelength photoelectric information can be acquired, processed and stored by utilizing a photoelectric response enhancement effect formed by a ternary heterogeneous coupling structure, efficient integration of multiple functions such as circular polarization light identification, wide spectrum response and bidirectional synapse is realized, and a new scheme is provided for a compact intelligent visual system.

Description

TECHNICAL FIELD

[0001] The application relates to a multifunctional synapse transistor with an organic ternary heterojunction coupling structure and a manufacturing method thereof, and belongs to the field of organic optical synapse transistors. BACKGROUND

[0002] As a discipline frontier integrating biological mechanisms and optoelectronic engineering, bionic vision technology is leading a revolutionary breakthrough in the new generation of intelligent sensing systems. In recent years, organic bionic vision systems have become one of the most promising directions in the field of bionic vision research due to their unique functional adjustability, excellent flexibility, significant cost advantage and lightweight characteristics. In particular, the excellent compatibility of organic materials with flexible substrates and the inherent advantage of large-scale preparation have opened up unprecedented development space for wearable smart devices, high-precision machine vision, new-generation intelligent sensors, precision medical assistance, natural human-computer interaction, intelligent security monitoring and automatic driving and other diversified application scenarios. However, existing research shows that traditional organic synapse transistors still have obvious deficiencies in circular polarization state accurate identification, wide-spectrum efficient response and multifunctional system integration, which greatly limits their practical application efficiency in complex environments. SUMMARY

[0003] In order to overcome the deficiencies of the prior art, the application provides a multifunctional synapse transistor with an organic ternary heterojunction coupling structure and a manufacturing method thereof, which can simultaneously have bidirectional synapse behavior, circularly polarized light sensitive synapse behavior and wide-spectrum response synapse behavior.

[0004] The technical scheme adopted by the application to solve the technical problems is: In a first aspect, the application provides a multifunctional synapse transistor with an organic ternary heterojunction coupling structure, which comprises an electrode and a substrate, a gate dielectric layer and an organic PN junction stacked in order from bottom to top. The organic PN junction comprises an N-type organic semiconductor layer and a P-type organic semiconductor layer stacked on the N-type organic semiconductor layer. A chiral COF layer with an area smaller than the P-type organic semiconductor layer is arranged on the P-type organic semiconductor layer. The electrode comprises a source electrode and a drain electrode, and both the source electrode and the drain electrode are in contact with the chiral COF layer and the P-type organic semiconductor layer.

[0005] The multifunctional synapse transistor of the organic ternary heterojunction structure provided in the application can solve the key challenges of multifunctional integration and performance optimization in the current bionic vision system by constructing the organic ternary heterojunction structure. By independently optimizing the chiral optical properties of the chiral COF (covalent organic framework) and the charge transport performance of the two-dimensional organic single crystal (the N-type organic semiconductor layer and the P-type organic semiconductor layer are two-dimensional organic single crystals), the bottleneck of mutual restriction between the chiral response and the electrical performance of the traditional single material is broken, the device current asymmetry factor is significantly improved, and excellent photoelectric response characteristics are maintained, the chiral COF layer is located at the top, and better light absorption effect can be obtained.

[0006] Further, the material of the chiral COF layer is R-TpPa-1-COF or S-TpPa-1-COF.

[0007] The rigid framework of the material reduces the interference of molecular vibration on the light response signal, enhances the circular polarization recognition stability, and has excellent chemical stability, which is beneficial to prolong the service life.

[0008] Further, the material of the P-type organic semiconductor layer is DTT-8, BTBT-T7 or Ph-BTBT-10.

[0009] These materials have high energy level matching degree with R-TpPa-1-COF or S-TpPa-1-COF, and the photo-generated holes can be quickly transferred from the chiral COF layer to the P-type layer, reducing the charge recombination loss. The device further improves the photoelectric response speed and stability while maintaining high circular polarization recognition sensitivity, and strengthens the synergistic effect of chiral recognition and charge transport.

[0010] Further, the material of the N-type organic semiconductor layer is TFT-CN, PDIF-CN2 or CMUT.

[0011] These materials have energy level matching with the preferred P-type organic semiconductor, and through energy level matching and complementary absorption wavelength, the device can achieve high response in a wide wavelength range, and has bidirectional light response capability.

[0012] Further, the thickness of the chiral COF layer is 10nm-100nm, the thickness of the P-type organic semiconductor layer is 1nm-50nm, and the thickness of the N-type organic semiconductor layer is 1nm-50nm.

[0013] These thickness ranges achieve a high-performance balance by optimizing light absorption, charge transport and interface coupling. The chiral COF layer at this thickness is beneficial to enhance the response to circularly polarized light, but too thick will increase the carrier transport path, resulting in a decrease in mobility.

[0014] In a second aspect, the present application provides a method for manufacturing a multi-functional synapse transistor with an organic ternary heterojunction coupling structure, comprising the following steps: preparing a gate dielectric layer on a substrate surface; preparing an organic PN junction on the gate dielectric layer, the organic PN junction comprising an N-type organic semiconductor layer and a P-type organic semiconductor layer stacked on the N-type organic semiconductor layer; preparing a chiral COF layer on the P-type organic semiconductor layer, the chiral COF layer having an area smaller than that of the P-type organic semiconductor layer; preparing an electrode on the P-type organic semiconductor layer, the electrode simultaneously contacting the P-type organic semiconductor layer and the chiral COF layer, the electrode comprising a source electrode and a drain electrode.

[0015] Optionally, the step of preparing an organic PN junction on the gate dielectric layer comprises: preparing an N-type organic semiconductor solution, the solvent being a first volatile solvent; dropping the N-type organic semiconductor solution on a first liquid-phase substrate, and obtaining an N-type organic semiconductor thin film after volatilization of the first volatile solvent; transferring the N-type organic semiconductor thin film to the gate dielectric layer as the N-type organic semiconductor layer; preparing a P-type organic semiconductor solution, the solvent being a second volatile solvent; dropping the P-type organic semiconductor solution on a second liquid-phase substrate, and obtaining a P-type organic semiconductor thin film after volatilization of the second volatile solvent; transferring the P-type organic semiconductor thin film to the N-type organic semiconductor layer as the P-type organic semiconductor layer.

[0016] Optionally, the step of preparing an organic PN junction on the gate dielectric layer comprises: preparing a mixed solution simultaneously dissolving an N-type organic semiconductor and a P-type organic semiconductor, the solvent being a third volatile solvent; and processing the mixed solution in one of the following two ways: firstly, dropping the mixed solution on a third liquid-phase substrate, and obtaining a layered double-layer thin film comprising an N-type organic semiconductor thin film and a P-type organic semiconductor thin film after volatilization of the third volatile solvent; transferring the double-layer thin film to the gate dielectric layer with the N-type organic semiconductor thin film facing the gate dielectric layer, thereby obtaining the organic PN junction; secondly, blade-coating the mixed solution on the gate dielectric layer, and obtaining the PN junction after volatilization of the third volatile solvent.

[0017] Further, in the mixed solution, the concentration of the N-type organic semiconductor is greater than that of the P-type organic semiconductor.

[0018] Optionally, the step of preparing the chiral COF layer on the P-type organic semiconductor layer comprises: A precursor solution is prepared by dissolving 2,4,6-triformylphloroglucinol, p-phenylenediamine and a chiral inducer, which is S-1-phenylethylamine or R-1-phenylethylamine, in dichloromethane, and the precursor solution is diluted with chlorobenzene and then added dropwise on the surface of deionized water, and a chiral COF film is obtained at the gas-liquid interface after standing, and the chiral COF film is transferred to the P-type organic semiconductor layer to obtain the chiral COF layer.

[0019] The organic ternary heterojunction coupling structure multifunctional synapse transistor of the application can collect, process and store polarized and multi-wavelength photoelectric information by using the photoelectric response enhancement effect of the ternary heterojunction coupling structure, realizes efficient integration of circularly polarized light recognition, wide spectrum response and bidirectional synapse, and provides a new scheme for compact intelligent vision systems.

[0020] Other characteristics and advantages of the present application will be set forth in the subsequent description, and in part will become apparent to those skilled in the art from the description, or can be learned by practice of the application. The purposes and other advantages of the present application can be realized and obtained by the structure particularly pointed out in the written description and the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is a layer structure schematic diagram of an organic ternary heterojunction coupling structure multifunctional synapse transistor provided by an embodiment of the application.

[0022] Figure 2 is a top view structure schematic diagram of an organic ternary heterojunction coupling structure multifunctional synapse transistor provided by an embodiment of the application.

[0023] Figure 3 is a microscope image of a double-layer two-dimensional organic molecular crystal film transferred to a substrate.

[0024] Figure 4 is a processing picture marked on the basis of Figure 3 .

[0025] Figure 5 is a circularly polarized light sensitive synapse behavior I-T curve diagram of an organic ternary heterojunction coupling structure multifunctional synapse transistor provided by an embodiment of the application.

[0026] Figure 6 is a wide spectrum response synapse behavior I-T curve diagram of an organic ternary heterojunction coupling structure multifunctional synapse transistor provided by an embodiment of the application.

[0027] Figure 7 is a bidirectional synaptic behavior I-T curve diagram of a multifunctional synaptic transistor of an organic ternary heterojunction coupling structure according to an embodiment of the present application.

[0028] The figure mark: 1, substrate; 2, gate dielectric layer; 3, N-type organic semiconductor layer; 4, P-type organic semiconductor layer; 5, chiral COF layer; 6, source electrode; 7, drain electrode. DETAILED DESCRIPTION

[0029] Embodiments of the present application are described below in detail, examples of which are shown in the drawings, wherein the same or similar reference numbers represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0030] The disclosure below provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and settings of specific examples are described below. Of course, they are only examples and the purpose is not to limit the present application. In addition, the present application can repeatedly refer to numbers and / or letters in different examples, and such repetition is for the purpose of simplification and clarity, which does not indicate the relationship between the various embodiments and / or settings discussed.

[0031] It should be understood that any and all embodiments of the present application can be combined with the technical features of any other embodiment or multiple other embodiments to obtain additional embodiments without conflict. The present application includes such combinations to obtain additional embodiments.

[0032] Unless otherwise defined, all technical and scientific terms used herein have standard meanings within the field of the claimed subject matter. In the event of a conflict in definitions, the definitions provided herein will control.

[0033] Reference Figure 1 , the embodiment of the present application provides a multifunctional synaptic transistor of an organic ternary heterojunction coupling structure, which comprises an electrode and a substrate 1, a gate dielectric layer 2, an organic PN junction, which are stacked in order from bottom to top, the organic PN junction comprises an N-type organic semiconductor layer 3 and a P-type organic semiconductor layer 4 stacked on the N-type organic semiconductor layer 3, a chiral COF layer 5 with an area smaller than the P-type organic semiconductor layer 4 is arranged on the P-type organic semiconductor layer 4, the electrode comprises a source electrode 6 and a drain electrode 7, both the source electrode 6 and the drain electrode 7 are in contact with the chiral COF layer 5 and the P-type organic semiconductor layer 4.

[0034] Specifically, the substrate material can be a silicon wafer or the like.

[0035] The material of the gate dielectric layer may be, for example, SiO2, HfO2, ZrO2, TiOx, Al2O3, or the like.

[0036] The chiral COF layer and the organic PN are combined to form a channel layer. The organic PN junction is formed by two two-dimensional organic molecular crystal films with matched energy levels, and the N-type organic semiconductor layer as the two-dimensional organic molecular crystal film, the P-type organic semiconductor layer as the two-dimensional organic molecular crystal film, and the chiral COF layer are sequentially stacked to form a ternary heterojunction coupling structure.

[0037] The material of the source and the drain may be, for example, Au, Ag, or Cu.

[0038] The two-dimensional organic molecular crystal film of the P-type organic semiconductor layer may be DTT-8, BTBT-T7, Ph-BTBT-10, or the like, and the thickness is 1 nm to 50 nm.

[0039] The two-dimensional organic molecular crystal film of the N-type organic semiconductor layer may be TFT-CN, PDIF-CN2, CMUT, or the like, and the thickness is 1 nm to 50 nm.

[0040] The chiral COF layer is R-TpPa-1-COF or S-TpPa-1-COF, and the thickness is 10 nm to 100 nm, which is matched with the energy level of the adjacent two-dimensional organic molecular crystal film (P-type organic semiconductor layer).

[0041] It is found in the control variable experiment that the single-layer chiral COF can identify circularly polarized light, but has poor conductivity and poor photoelectric response; the single-layer organic two-dimensional molecular crystal layer has good conductivity and good photoelectric response, but cannot identify circularly polarized light, can only respond to a limited waveband, and cannot simultaneously realize positive and negative responses; after the three layers (N-type organic semiconductor layer, P-type organic semiconductor layer, and chiral COF layer) are stacked, not only can circularly polarized light be efficiently identified, but also good photoelectric response can be maintained, and positive and negative bidirectional responses can be realized; and the three layers combine material systems with complementary absorption characteristics, and the device can realize efficient detection in the full spectrum of ultraviolet-visible-near infrared.

[0042] The embodiment of the present application further provides a method for manufacturing a multifunctional synaptic transistor of an organic ternary heterojunction coupling structure, comprising the following steps: S1: preparing a gate dielectric layer on the surface of a substrate.

[0043] S2: preparing an organic PN junction on the gate dielectric layer, wherein the organic PN junction comprises an N-type organic semiconductor layer and a P-type organic semiconductor layer stacked on the N-type organic semiconductor layer.

[0044] S3: preparing a chiral COF layer on the P-type organic semiconductor layer, wherein the area of the chiral COF layer is smaller than that of the P-type organic semiconductor layer.

[0045] S4: preparing an electrode on the P-type organic semiconductor layer, the electrode being in contact with both the P-type organic semiconductor layer and the chiral COF layer, the electrode comprising a source electrode and a drain electrode.

[0046] The preparation of the gate dielectric layer and the electrode can follow the preparation method of the semiconductor device in the prior art.

[0047] The preparation steps of the chiral COF layer of R-TpPa-1-COF (or S-TpPa-1-COF) are as follows: 2,4,6-triformylphloroglucinol (TP), p-phenylenediamine (PA) and chiral inducer R-1-phenylethylamine (or S-1-phenylethylamine) are dissolved in dichloromethane to prepare a precursor solution. The solution is further diluted with chlorobenzene, and the mixed solution is added dropwise on the surface of deionized water. After maintaining at room temperature for 24 hours, a chiral COF film is formed at the gas-liquid interface, and then transferred to the P-type organic semiconductor layer. The area of the chiral COF layer is controlled by the amount of the mixed solution dropped on the surface of deionized water.

[0048] The transfer method can be, for example, contact fishing, specifically: the substrate with the prepared organic PN junction is aligned with the chiral COF film on the liquid surface, slowly approached, and the side of the P-type organic semiconductor layer is contacted with the chiral COF film grown on the liquid surface. When the two are in full contact, the substrate is slowly lifted away from the liquid surface. The chiral COF film prepared on the deionized water is transferred to the surface of the P-type organic semiconductor layer. Then, the substrate is washed with deionized water and air-dried to obtain the chiral COF layer.

[0049] In the first type of embodiment, the preparation steps of the organic PN junction are as follows: S21: preparing an N-type organic semiconductor solution, the solvent being a first volatile solvent.

[0050] S22: dropping the N-type organic semiconductor solution on a first liquid-phase substrate to obtain an N-type organic semiconductor thin film after volatilization of the first volatile solvent.

[0051] S23: transferring the N-type organic semiconductor thin film to the gate dielectric layer as an N-type organic semiconductor layer. S24: preparing a P-type organic semiconductor solution, the solvent being a second volatile solvent.

[0052] S25: dropping the P-type organic semiconductor solution on a second liquid-phase substrate to obtain a P-type organic semiconductor thin film after volatilization of the second volatile solvent.

[0053] S26: transferring the P-type organic semiconductor thin film to the N-type organic semiconductor layer as a P-type organic semiconductor layer.

[0054] The N-type organic semiconductor solution is dropped on the first liquid phase substrate, and the P-type organic semiconductor solution is dropped on the second liquid phase substrate, which can also be transferred by contact fishing. Preferably, the first liquid phase substrate is immiscible with the first volatile solvent, the second liquid phase substrate is immiscible with the first volatile solvent, and the second liquid phase substrate is immiscible with the second volatile solvent.

[0055] As shown in Figure 2 of the three times of transferring the N-type organic semiconductor film, the P-type organic semiconductor film, and the chiral COF film, the N-type organic semiconductor film is smaller than the gate dielectric layer, the P-type organic semiconductor film is smaller than the gate dielectric layer, the N-type organic semiconductor film and the P-type organic semiconductor film have no area relationship requirement, as long as there is an overlapping part, and the chiral COF film is smaller than the overlapping part of the N-type organic semiconductor film and the P-type organic semiconductor film.

[0056] In the second type of embodiment, the preparation steps of the organic PN junction are as follows: S21': preparing a mixed solution simultaneously dissolving N-type organic semiconductor and P-type organic semiconductor, and the solvent is a third volatile solvent.

[0057] S22': dropping the mixed solution on a third liquid phase substrate, and after volatilization of the third volatile solvent, a layered double-layer film is obtained, which includes an N-type organic semiconductor film and a P-type organic semiconductor film.

[0058] S23': transferring the double-layer film to the gate dielectric layer with the N-type organic semiconductor film facing the gate dielectric layer, to obtain an organic PN junction.

[0059] The inventors found that dissolving the P-type organic semiconductor and the N-type organic semiconductor in the same volatile solvent, during the volatilization of the solvent, the two-dimensional organic films of the P-type organic semiconductor and the N-type organic semiconductor will grow separately due to intermolecular forces when the two-dimensional organic films grow, forming a double-layer structure. Thanks to this, the second type of embodiment can reduce one round of preparation, film formation, and transfer steps compared to the first type of embodiment, and reduce the trouble of multiple transfer alignment.

[0060] For example, when the P-type organic semiconductor is DDT-8 and the N-type organic semiconductor is TFT-CN, when step S23' is performed, under a microscope, as shown in Figure 3 , the boundary color of the two is similar, in order to facilitate identification, further providing artificial mark Figure 3 , Figure 4 , Figure 4 The "substrate" in

[0061] The inventors also found that when layered in this way, which of the two-dimensional organic thin film of the stacked P-type organic semiconductor and the two-dimensional organic thin film of the N-type organic semiconductor is on top and which is on the bottom, and which has a larger area and which has a smaller area are all relatively random. When the mixed solution is prepared, the concentration of the N-type organic semiconductor is greater than that of the P-type organic semiconductor, and there is a greater probability of forming a large-area overlapping organic PN junction.

[0062] The P-type organic semiconductor selected by the present application is DTT-8, BTBT-T7, and Ph-BTBT-10, and the N-type organic semiconductor is TFT-CN, PDIF-CN2, and CMUT. The PN junction of one P-type organic semiconductor combined with one N-type organic semiconductor has some color difference, which is convenient for distinguishing what material is on top and what material is on the bottom.

[0063] If the mixed solution of the P-type organic semiconductor and the N-type organic semiconductor is not easy to identify the corresponding relationship between each layer and the raw material after volatilization, the thickness can be tested by AFM (atomic force microscope) to determine the attribution of each layer. Generally, the thickness is an integer multiple of the monolayer thickness of itself. When accurate identification is required, TEM (transmission electron microscope) can be used for accurate judgment.

[0064] In the first and second embodiments, the first liquid phase substrate, the second liquid phase substrate, and the third liquid phase substrate are independently water, glycerol, or a mixture thereof. By introducing the liquid phase substrate, the coffee ring effect can be effectively suppressed, thereby obtaining a two-dimensional organic molecular crystal with uniform and controllable thickness. The first volatile solvent, the second volatile solvent, and the third volatile solvent are independently toluene, chlorobenzene, or o-dichlorobenzene, etc. to ensure that the solution can slowly volatilize after being dropped to form a uniform single crystal thin film. In the P-type organic semiconductor solution, the N-type organic semiconductor solution, and the mixed solution, the concentration of a single solute ranges from 0.01 mg / mL to 2 mg / mL, which can be adjusted according to the thickness and morphology requirements of the target thin film. The dropping amount of the solution on the liquid phase substrate can be accurately controlled according to the actual needs. For example, in a weighing bottle with a size of 40 mm x 70 mm, the dropping amount is usually 10 μL to 100 μL. By adjusting the concentration and the dropping amount, the thickness of the two-dimensional organic molecular crystal can be accurately controlled, and the thickness range can be from a monolayer to several hundred nanometers.

[0065] In the third embodiment, the preparation steps of the organic PN junction are as follows: S21'': preparing a mixed solution simultaneously dissolving the N-type organic semiconductor and the P-type organic semiconductor, and the solvent is the third volatile solvent.

[0066] S22'': coating the mixed solution on the gate dielectric layer, and obtaining the PN junction after the third volatile solvent is volatilized.

[0067] Based on the spontaneous layering principle of the mixed solution in the second type of embodiment, the mixed solution can be directly scraped and coated on the gate dielectric layer. By controlling the uniform and slow moving speed of the scraper, after scraping and coating is completed, a double-layer two-dimensional molecular crystal heterojunction can be obtained on the surface of the substrate, and the obtained heterojunction has a large area and good crystalline quality. The process of scraping and coating the liquid film is the prior art.

[0068] However, due to the randomness of the stacking of the two-dimensional organic thin film of the P-type organic semiconductor and the two-dimensional organic thin film of the N-type organic semiconductor, it is possible to obtain a device with the P-type organic semiconductor at the bottom and the N-type organic semiconductor at the top, which needs to be redissolved with a volatile solvent.

[0069] The above first type, second type and third type of organic PN junction preparation methods can realize the flatness of the interfaces of each layer, and the prepared thin film has an atomic-level flat surface, which is beneficial to charge transfer and realizes more integrated functions.

[0070] A semiconductor analyzer was used to test the I-T (current-time) curve of a multifunctional synaptic transistor with an organic ternary heterojunction coupling structure according to the structure of the present application. The substrate of the example device is a silicon wafer, the gate dielectric layer is silicon dioxide, the N-type organic semiconductor layer is TFT-CN, the P-type organic semiconductor layer is DTT-8, and the chiral COF material is R-TpPa-1-COF.

[0071] The test light was left-handed circularly polarized light and right-handed circularly polarized light, respectively, and the results are shown in Figure 5 Figure 5 The results show that the device has a circularly polarized light sensitive synaptic behavior.

[0072] The test light was 365 nm, 450 nm, 660 nm and 850 nm, respectively, and the results are shown in Figure 6 Figure 6 The results show that the device has a wide spectrum response synaptic behavior.

[0073] The substrate was applied with a positive gate voltage, and the test light was 365 nm; the substrate was applied with a negative gate voltage, and the test light was 365 nm, and the results are shown in Figure 7 Figure 7 The results show that the device exhibits a positive response under a negative gate voltage and a negative response under a positive gate voltage, and the device has a bidirectional synaptic behavior.

[0074] Therefore, the multifunctional synaptic transistor with an organic ternary heterojunction coupling structure according to the structure of the present application can realize efficient integration of circularly polarized light recognition, wide spectrum response and bidirectional synaptic behavior.

[0075] ​​​In the description of the specification, the description of the term "one embodiment" "certain embodiments" "illustrative embodiment" "example" "specific example" or "some examples" etc. means that the specific features, materials or characteristics described in connection with the described embodiment or example are included in at least one embodiment or example of the present application. In the description of the specification, the illustrative description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0076] The above is the preferred embodiment of the present application, it should be pointed out that, for those skilled in the art, without departing from the principles of the present application, can also make a number of improvements and refinements, these improvements and refinements are also considered to be within the scope of the present application.

Claims

1. A multi-functional synapse transistor of an organic ternary heterojunction coupling structure, characterized by, The electrode and the substrate, the gate dielectric layer, the organic PN junction are sequentially stacked from bottom to top, the organic PN junction comprises an N-type organic semiconductor layer and a P-type organic semiconductor layer stacked on the N-type organic semiconductor layer, a chiral COF layer with an area smaller than the P-type organic semiconductor layer is arranged on the P-type organic semiconductor layer, the electrode comprises a source electrode and a drain electrode, and the source electrode and the drain electrode are in contact with both the chiral COF layer and the P-type organic semiconductor layer. 2.The multifunctional synapse transistor of organic ternary heterojunction structure of claim 1, wherein, The material of the chiral COF layer is R-TpPa-1-COF or S-TpPa-1-COF. 3.The multifunctional synapse transistor of organic ternary heterojunction structure according to claim 2, wherein, The material of the P-type organic semiconductor layer is DTT-8, BTBT-T7 or Ph-BTBT-10.

4. The multifunctional synapse transistor of organic ternary heterojunction structure according to claim 3, wherein, The material of the N-type organic semiconductor layer is TFT-CN, PDIF-CN2 or CMUT. 5.The multifunctional synapse transistor of organic ternary heterojunction structure of claim 1, wherein, The thickness of the chiral COF layer is 10 nm to 100 nm, the thickness of the P-type organic semiconductor layer is 1 nm to 50 nm, and the thickness of the N-type organic semiconductor layer is 1 nm to 50 nm.

6. A method for fabricating a multi-functional synapse transistor of an organic ternary heterojunction coupling structure, characterized in that, The method comprises the following steps: a gate dielectric layer is prepared on the surface of a substrate; an organic PN junction is prepared on the gate dielectric layer, the organic PN junction comprises an N-type organic semiconductor layer and a P-type organic semiconductor layer stacked on the N-type organic semiconductor layer; a chiral COF layer is prepared on the P-type organic semiconductor layer, and the area of the chiral COF layer is smaller than that of the P-type organic semiconductor layer; an electrode is prepared on the P-type organic semiconductor layer, the electrode is in contact with both the P-type organic semiconductor layer and the chiral COF layer, and the electrode comprises a source electrode and a drain electrode.

7. The method of claim 6, wherein the step of forming the multi-functional synapse transistor is performed by a process of: The step of preparing the organic PN junction on the gate dielectric layer comprises: an N-type organic semiconductor solution is prepared, and a first volatile solvent is used as a solvent; the N-type organic semiconductor solution is dropped on a first liquid-phase substrate, and an N-type organic semiconductor thin film is obtained after the first volatile solvent is volatilized; the N-type organic semiconductor thin film is transferred to the gate dielectric layer as the N-type organic semiconductor layer; a P-type organic semiconductor solution is prepared, and a second volatile solvent is used as a solvent; the P-type organic semiconductor solution is dropped on a second liquid-phase substrate, and a P-type organic semiconductor thin film is obtained after the second volatile solvent is volatilized; the P-type organic semiconductor thin film is transferred to the N-type organic semiconductor layer as the P-type organic semiconductor layer.

8. The method of claim 6, wherein the step of forming the multi-functional synapse transistor is performed by a process of: The step of preparing the organic PN junction on the gate dielectric layer comprises: a mixed solution in which an N-type organic semiconductor and a P-type organic semiconductor are dissolved simultaneously is prepared, and a third volatile solvent is used as a solvent; and the mixed solution is processed in one of the following two ways: firstly, the mixed solution is dropped on a third liquid-phase substrate, and a layered double-layer thin film is obtained after the third volatile solvent is volatilized, the double-layer thin film comprises an N-type organic semiconductor thin film and a P-type organic semiconductor thin film; and the double-layer thin film is transferred to the gate dielectric layer with the N-type organic semiconductor thin film facing the gate dielectric layer, so that the organic PN junction is obtained; The second kind: the mixed solution is scraped on the gate dielectric layer, and after the third volatile solvent volatilizes, the organic PN junction is obtained.

9. The method of claim 8, wherein the step of forming the multi-functional synapse transistor is performed by a process of: In the mixed solution, the concentration of the N-type organic semiconductor is greater than the concentration of the P-type organic semiconductor.

10. The method of claim 6, wherein the method further comprises: The step of preparing the chiral COF layer on the P-type organic semiconductor layer comprises: A precursor solution is prepared by dissolving 2,4,6-triformylphloroglucinol, p-phenylenediamine and a chiral inducer, which is S-1-phenylethylamine or R-1-phenylethylamine, in dichloromethane, and the precursor solution is diluted with chlorobenzene and then added dropwise on the surface of deionized water, and after standing, a chiral COF film is obtained at the gas-liquid interface, and the chiral COF film is transferred to the P-type organic semiconductor layer to obtain the chiral COF layer.

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