Light detection device

Abstract

A light detection device includes: a plurality of pixel groups including first pixels and second pixels; an in-pixel isolation region and an inter-pixel isolation region. The first pixel includes: a first photoelectric conversion region; a first light shielding portion including a first edge; and a first opening provided between the first edge of the first light shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The second pixel includes: a second photoelectric conversion region; a second light shielding portion including a second edge; and a second opening provided between the second edge of the second light shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. Each of the first edge and the second edge is inclined with respect to a vertical portion of the in-pixel isolation region, and the vertical portion of the in-pixel isolation region passes through a center of each pixel group.

Description

Cross-references to related applications

[0001] This application claims priority to Japanese Patent Application JP 2023-119050, filed on July 21, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This invention relates to a light detection device. Background Technology

[0003] A camera device is known to have the following structure: a photodiode and a memory are stacked in the light incident direction, and a light-shielding film is arranged between the photodiode and the memory (see, for example, Patent Document 1). List of cited references Patent documents

[0004] Patent Document 1: WO 2021 / 117648 Summary of the Invention Technical issues

[0005] In this type of camera or light detection device, performance needs to be further improved.

[0006] The present invention was made in view of the above circumstances, and it is desirable to provide a light detection device that can improve performance. Solution to the problem

[0007] A light detection device according to one aspect of the present invention includes: a plurality of pixel groups, which include a first pixel and a second pixel; An intra-pixel isolation region is disposed between the first pixel and the second pixel; and an inter-pixel isolation region is disposed between each pixel group of the plurality of pixel groups. The first pixel includes: A first photoelectric conversion region; a first light-shielding portion including a first edge; and a first opening disposed between the first edge of the first light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The second pixel includes: a second photoelectric conversion region; a second light-shielding portion including a second edge; and a second opening disposed between the second edge of the second light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. Each of the first edge and the second edge is inclined relative to the vertical portion of the intra-pixel isolation region that passes through the center of each pixel group, dividing the first pixel and the second pixel.

[0008] Based on the above, light incident on the first and second charge-holding portions can be suppressed by the first and second light-shielding portions, thereby reducing parasitic photosensitivity (PLS). Furthermore, the first opening in the first light-shielding portion and the second opening in the second light-shielding portion are linearly symmetrical about a straight line passing through the center of the sensor pixel as an axis of symmetry. This reduces the sensitivity difference of incident light between the first and second pixels. Additionally, the first light-shielding portion has a tilted first end, and the second light-shielding portion has a tilted second end. This improves charge transfer efficiency and suppresses PLS. In summary, the performance of the light detection device can be improved. Attached Figure Description

[0009] [ Figure 1 ] Figure 1 This is a block diagram illustrating a construction example of the function of a camera device (e.g., a light detection device) according to a first embodiment of the present invention. [ Figure 2 ] Figure 2 This is a diagram illustrating an example of the circuit construction of two adjacent pixels of a sensor pixel according to a first embodiment of the present invention. [ Figure 3 ] Figure 3 This is a cross-sectional view illustrating an example of the construction of a sensor pixel according to a first embodiment of the present invention. [ Figure 4A ] Figure 4A This is a plan view illustrating an example of the construction of a sensor pixel according to a first embodiment of the present invention. [ Figure 4B ] Figure 4B This is a plan view illustrating an example of the construction of a sensor pixel according to a first embodiment of the present invention. [ Figure 4C ] Figure 4C This is a plan view illustrating an example of the construction of a sensor pixel according to a first embodiment of the present invention. [ Figure 4D ] Figure 4D This is a plan view illustrating an example of the construction of a sensor pixel according to a first embodiment of the present invention. [ Figure 4E ] Figure 4E This is a plan view illustrating an example of the construction of a sensor pixel according to a first embodiment of the present invention. [ Figure 5A ] Figure 5A This is a plan view showing a horizontal light-shielding portion and an opening provided in the horizontal light-shielding portion according to a comparative example of the present invention. [ Figure 5B ] Figure 5BThis is a plan view showing a horizontal light-shielding portion and an opening provided in the horizontal light-shielding portion according to an embodiment of the present invention. [ Figure 6 ] Figure 6 This is a cross-sectional view illustrating an example of the construction of a sensor pixel according to a second embodiment of the present invention. [ Figure 7A ] Figure 7A This is a plan view illustrating an example of the construction of a sensor pixel according to a second embodiment of the present invention. [ Figure 7B ] Figure 7B This is a plan view illustrating an example of the construction of a sensor pixel according to a second embodiment of the present invention. [ Figure 7C ] Figure 7C This is a plan view illustrating an example of the construction of a sensor pixel according to a second embodiment of the present invention. [ Figure 7D ] Figure 7D This is a plan view illustrating an example of the construction of a sensor pixel according to a second embodiment of the present invention. [ Figure 8 ] Figure 8 This is a cross-sectional view showing the construction of a sensor pixel according to a first variation of a second embodiment of the present invention. [ Figure 9 ] Figure 9 This is a plan view illustrating the construction of a sensor pixel according to a first variation of a second embodiment of the present invention. [ Figure 10 ] Figure 10 This is a cross-sectional view showing the construction of a sensor pixel according to a second variation of a second embodiment of the present invention. [ Figure 11 ] Figure 11 This is a plan view illustrating the construction of a sensor pixel according to a second variation of a second embodiment of the present invention. [ Figure 12 ] Figure 12 This is a cross-sectional view showing the construction of a sensor pixel according to a third variation of a second embodiment of the present invention. [ Figure 13 ] Figure 13 This is a plan view illustrating the construction of a sensor pixel according to a third variation of a second embodiment of the present invention. [ Figure 14 ] Figure 14 This is a cross-sectional view showing the construction of a sensor pixel according to a fourth variation of a second embodiment of the present invention. [ Figure 15A ] Figure 15AThis is a cross-sectional view showing the construction of a sensor pixel according to a fifth variation of a second embodiment of the present invention. [ Figure 15B ] Figure 15B This is a cross-sectional view showing the construction of a sensor pixel according to a fifth variation of a second embodiment of the present invention. [ Figure 16A ] Figure 16A This is a plan view illustrating the construction of a sensor pixel according to a fifth variation of a second embodiment of the present invention. [ Figure 16B ] Figure 16B This is a plan view illustrating the construction of a sensor pixel according to a fifth variation of a second embodiment of the present invention. [ Figure 16C ] Figure 16C This is a plan view illustrating the construction of a sensor pixel according to a fifth variation of a second embodiment of the present invention. [ Figure 16D ] Figure 16D This is a plan view illustrating the construction of a sensor pixel according to a fifth variation of a second embodiment of the present invention. [ Figure 16E ] Figure 16E This is a plan view illustrating the construction of a sensor pixel according to a fifth variation of a second embodiment of the present invention. [ Figure 17 ] Figure 17 This is a cross-sectional view showing the construction of a sensor pixel according to a sixth variation of a second embodiment of the present invention. [ Figure 18A ] Figure 18A This is a plan view illustrating the construction of a sensor pixel according to a modified example of a sixth embodiment of the present invention. [ Figure 18B ] Figure 18B This is a plan view illustrating the construction of a sensor pixel according to a sixth variation of a second embodiment of the present invention. [ Figure 19 ] Figure 19 This is a cross-sectional view showing a method for forming a trench according to a second embodiment of the present invention, in a sequential manner. [ Figure 20 ] Figure 20 This is a diagram illustrating an example of the construction of an electronic device to which this technology can be applied. [ Figure 21 ] Figure 21 This is a block diagram illustrating a schematic construction example of a vehicle control system, which is an example of a mobile body control system to which the technology according to the present invention can be applied. [ Figure 22 ] Figure 22 This is a diagram showing an example of the installation location of the camera unit. Detailed Implementation Plan

[0010] In the following description, embodiments of the invention will be described with reference to the accompanying drawings. In the figures cited in the following description, identical or similar portions are indicated by identical or similar reference numerals. It should be noted that the drawings are schematic, and the relationships between thicknesses and planar dimensions, the thickness ratios between layers, etc., differ from actual dimensions. Therefore, the following description should be considered to determine specific thicknesses and dimensions. Furthermore, it goes without saying that there are some differences in dimensional relationships and scale between the various figures.

[0011] In the following description, the definitions of directions such as up and down are merely for ease of explanation and do not limit the technical concept of the invention. For example, when an object is viewed by rotating it 90°, "up and down" is converted to and read as "left and right," and when an object is viewed by rotating it 180°, "up and down" is reversed before being read, which is to be expected.

[0012] In the following description, the thickness direction of a semiconductor substrate refers to the direction from one of the front and back sides of the semiconductor substrate toward the other. The thickness direction of a semiconductor substrate is the normal direction of the front side of the semiconductor substrate and also the normal direction of the back side of the semiconductor substrate.

[0013] In the following description, a plan view means a view taken from the thickness direction of the semiconductor substrate (i.e., the normal direction of the front or back side of the semiconductor substrate).

[0014] <First Implementation Plan> (Example of the overall structure of the camera device) Figure 1 This is a block diagram illustrating a construction example of the function of a camera device 101 according to a first embodiment of the present invention. The camera device 101 is an example of a "light detection device" of the present invention, and is, for example, a so-called global shutter type back-illuminated image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor. The camera device 101 receives light from a subject, performs photoelectric conversion on the light, and generates an image signal to capture an image.

[0015] The global shutter method is essentially a method of performing global exposure, where exposure begins and ends simultaneously for all pixels. Here, "all pixels" refers to all pixels present in the portion of the image, excluding false pixels. Additionally, if the temporal difference and distortion of the image are small enough not to cause problems, the global shutter method also includes moving the global exposure area while performing global exposure in units of multiple rows (e.g., dozens of rows) instead of all pixels simultaneously. Furthermore, the global shutter method also includes performing global exposure on pixels within a predetermined area, rather than all pixels present in the portion of the image.

[0016] A back-illuminated image sensor is an image sensor with the following structure: between a light-receiving surface into which light from the subject enters and a wiring layer provided with wiring such as transistors driving each pixel, there is a photoelectric conversion unit, such as a photodiode, that receives light from the subject and converts the light into an electrical signal.

[0017] The camera device 101 includes, for example, a pixel array unit 111, a vertical drive unit 112, a column signal processing unit 113, a data storage unit 119, a horizontal drive unit 114, a system control unit 115, and a signal processing unit 118.

[0018] In the imaging device 101, the pixel array 111 is formed on the semiconductor substrate 10 (described later). For example, peripheral circuits such as the vertical drive unit 112, the column signal processing unit 113, the data storage unit 119, the horizontal drive unit 114, the system control unit 115, and the signal processing unit 118 are formed on the same semiconductor substrate 10 as the pixel array 111.

[0019] The pixel array 111 includes a plurality of sensor pixels PX, and each sensor pixel PX includes a photoelectric conversion unit PD (described later). The photoelectric conversion unit PD generates and accumulates charge based on the amount of light incident from the subject. Figure 1 As shown, sensor pixels PX are arranged along the horizontal direction (row direction) and the vertical direction (column direction). In the pixel array section 111, pixel driving lines 116 are routed along the row direction for each pixel row including sensor pixels PX arranged in a row in the row direction, and vertical signal lines VSL are routed along the column direction for each pixel column including sensor pixels PX arranged in a column in the column direction.

[0020] The vertical drive unit 112 includes a shift register and an address decoder, etc. The vertical drive unit 112 supplies signals to each of the multiple sensor pixels PX through multiple pixel drive lines 116, thereby driving all the multiple sensor pixels PX in the pixel array section 111 simultaneously or on a pixel-row basis.

[0021] The vertical signal lines (VSLs) supply the column signal processing unit 113 with signals output from each unit pixel of the pixel row selectively scanned by the vertical drive unit 112. The column signal processing unit 113 performs predetermined signal processing on the signals output from each unit pixel of the selected row via the vertical signal lines (VSLs) for each pixel column of the pixel array 111, and temporarily holds the pixel signals after signal processing.

[0022] Specifically, the column signal processing unit 113 includes, for example, a shift register and an address decoder, and performs noise removal processing, correlated double sampling processing, analog-to-digital (A / D) conversion processing of analog pixel signals, and generates digital pixel signals. The column signal processing unit 113 supplies the generated pixel signals to the signal processing unit 118.

[0023] The horizontal drive unit 114 includes a shift register, an address decoder, etc., and sequentially selects the unit circuits corresponding to the pixel columns of the column signal processing unit 113. By performing selective scanning through the horizontal drive unit 114, the pixel signals that have undergone signal processing for each unit circuit in the column signal processing unit 113 are sequentially output to the signal processing unit 118.

[0024] The system control unit 115 includes a timing generator that generates various timing signals. The system control unit 115 performs drive control of the vertical drive unit 112, the column signal processing unit 113, and the horizontal drive unit 114 based on the timing signals generated by the timing generator.

[0025] The signal processing unit 118 performs signal processing such as arithmetic processing on the pixel signals supplied by the column signal processing unit 113, and temporarily stores the data in the data storage unit 119 as needed, and outputs a pixel signal containing each pixel signal.

[0026] Data storage unit 119 temporarily stores the data required for signal processing in signal processing unit 118.

[0027] (Example of circuit construction for sensor pixel PX) Next, we will refer to Figure 2 Instructions set Figure 1 Example of circuit construction for sensor pixel PX in pixel array section 111. Figure 2 An example of the circuit construction of two adjacent pixels PX(R) and PX(L) of sensor pixel PX according to a first embodiment of the present invention is shown.

[0028] exist Figure 2In the example shown, the sensor pixel PX in the pixel array 111 implements a memory-retaining global shutter system. The pixel PX(R), which is part of the sensor pixel PX, is an example of the "first pixel" of the present invention, and includes a photoelectric conversion unit PD(R) (an example of the "first photoelectric conversion unit" of the present invention), a first transmission transistor TG(R)A, a second transmission transistor TG(R)B, a third transmission transistor TG(R)C, a charge retention unit MEM(R) (an example of the "first charge retention unit" of the present invention), and an exhaust transistor OFG(R). The first transfer transistor TG(R)A includes a transfer gate TRZ(R). The second transfer transistor TG(R)B includes a transfer gate TRX(R). The third transfer transistor TG(R)C includes a transfer gate TRG(R).

[0029] Similarly, pixel PX(L), which is another part of sensor pixel PX, is an example of the "second pixel" in this invention, and includes a photoelectric conversion unit PD(L) (an example of the "second photoelectric conversion unit" of this invention), a first transfer transistor TG(L)A, a second transfer transistor TG(L)B, a third transfer transistor TG(L)C, a charge holding section MEM(L) (an example of the "second charge holding section" of this invention), and an exhaust transistor OFG(L). The first transfer transistor TG(L)A includes a transfer gate TRZ(L). The second transfer transistor TG(L)B includes a transfer gate TRX(L). The third transfer transistor TG(L)C includes a transfer gate TRG(L).

[0030] Furthermore, pixels PX(R) and PX(L) share the same power supply VDD, charge-to-voltage conversion unit FD, reset transistor RST, amplification transistor AMP, and selection transistor SEL. In this example, the first transfer transistors TG(R)A and TG(L)A, the second transfer transistors TG(R)B and TG(L)B, the third transfer transistors TG(R)C and TG(L)C, the reset transistor RST, the amplification transistor AMP, and the selection transistor SEL are all N-type MOS transistors.

[0031] Under the drive control of the system control unit 115, drive signals are supplied by the vertical drive unit 112 and the horizontal drive unit 114 to the gate electrodes of the first transfer transistors TG(R)A and TG(L)A, the second transfer transistors TG(R)B and TG(L)B, the third transfer transistors TG(R)C and TG(L)C, the reset transistor RST, the amplification transistor AMP, and the selection transistor SEL. These drive signals are pulse signals that are active (conducting) when high and inactive (off) when low. Note that in the following text, "setting the drive signal to an active state" is also referred to as "conducting drive signal," and "setting the drive signal to an inactive state" is also referred to as "off drive signal."

[0032] The photoelectric conversion units PD(R) and PD(L) are photoelectric conversion elements including, for example, PN junction photodiodes, and are configured to receive light from a subject and generate and accumulate charge corresponding to the amount of light received through photoelectric conversion.

[0033] The charge retention sections MEM(R) and MEM(L) are respectively disposed between the photoelectric conversion units PD(R) and PD(L) and the charge-to-voltage conversion unit FD. The charge retention sections MEM(R) and MEM(L) are areas that temporarily retain the charge generated and accumulated in the photoelectric conversion units PD(R) and PD(L) until the charge is transferred to the charge-to-voltage conversion unit FD to realize the global shutter function.

[0034] A first transfer transistor TG(R)A is disposed between the photoelectric conversion unit PD(R) and the second transfer transistor TG(R)B. The second transfer transistor TG(R)B is disposed between the first transfer transistor TG(R)A and the charge holding section MEM(R). A third transfer transistor TG(R)C is disposed between the charge holding section MEM(R) and the charge-to-voltage conversion unit FD. The first transfer transistor TG(R)A and the second transfer transistor TG(R)B are configured to transfer the charge accumulated in the photoelectric conversion unit PD(R) to the charge holding section MEM(R) according to a drive signal applied to their gate electrodes.

[0035] For example, the first transfer transistor TG(R)A and the second transfer transistor TG(R)B are turned on when the discharge transistor OFG(R) is in the off state, and then the charge accumulated in the photoelectric conversion unit PD(R) is transferred from the photoelectric conversion unit PD(R) to the charge holding part MEM(R).

[0036] Similarly, a first transfer transistor TG(L)A is arranged between the photoelectric conversion unit PD(L) and the second transfer transistor TG(L)B. The second transfer transistor TG(L)B is arranged between the first transfer transistor TG(L)A and the charge retention section MEM(L). A third transfer transistor TG(L)C is arranged between the charge retention section MEM(L) and the charge-to-voltage conversion unit FD. The first transfer transistor TG(L)A and the second transfer transistor TG(L)B are configured to transfer the charge accumulated in the photoelectric conversion unit PD(L) to the charge retention section MEM(L) according to a drive signal applied to their gate electrodes.

[0037] For example, the first transfer transistor TG(L)A and the second transfer transistor TG(L)B are turned on when the discharge transistor OFG(L) is in the off state, and then the charge accumulated in the photoelectric conversion unit PD(L) is transferred from the photoelectric conversion unit PD(L) to the charge holding unit MEM(L).

[0038] The third transfer transistors TG(R)C and TG(L)C are configured to transfer the charge temporarily held in the charge holding section MEM(R) and the charge holding section MEM(L) to the charge-to-voltage conversion unit FD according to the drive signal applied to the gate electrode.

[0039] In pixels PX(R) and PX(L), for example, the third transfer transistors TG(R)C and TG(L)C are turned on, and then the charge held in the charge holding sections MEM(R) and MEM(L)C is transferred to the charge-to-voltage conversion unit FD through the third transfer transistors TG(R)C and TG(L)C.

[0040] The drain of the reset transistor RST is connected to the power supply VDD, and the source is connected to the charge-to-voltage conversion unit FD. The reset transistor RST initializes the charge-to-voltage conversion unit FD, i.e., resets it, according to the drive signal applied to its gate electrode. For example, when the reset transistor RST is turned on by the drive signal, the potential of the charge-to-voltage conversion unit FD is reset to the voltage level of the power supply VDD. That is, the charge-to-voltage conversion unit FD is initialized.

[0041] The charge-to-voltage conversion unit FD is a floating diffusion region that converts the charge transferred from the photoelectric conversion units PD(R) and PD(L) via the first transfer transistors TG(R)A and TG(L)A, the second transfer transistors TG(R)B and TG(L)B, the charge holding sections MEM(R) and MEM(L), and the third transfer transistors TG(R)C and TG(L)C into electrical signals (e.g., voltage signals), and outputs the voltage signal. The reset transistor RST is connected to the charge-to-voltage conversion unit FD and is connected to the vertical signal line VSL via the amplification transistor AMP and the selection transistor SEL.

[0042] The amplifying transistor AMP outputs an electrical signal corresponding to the potential of the charge-to-voltage conversion unit FD. The amplifying transistor AMP, for example, constitutes a source follower circuit with a constant current source disposed in the column signal processing unit 113. The selection transistor SEL is turned on when the sensor pixel PX is selected, and the electrical signal from the charge-to-voltage conversion unit FD is returned to the vertical signal line VSL via the amplifying transistor AMP, and then output to the column signal processing unit 113.

[0043] In addition to the charge-to-voltage conversion unit FD, which serves as the destination for charge transfer in the photoelectric conversion units PD(R) and PD(L), the sensor pixels PX(R) and PX(L) also include a power supply VDD. An exhaust transistor OFG(R) is arranged between the drain of the transmission transistor TG(R)A and the power supply VDD. An exhaust transistor OFG(L) is arranged between the drain of the transmission transistor TG(L)A and the power supply VDD.

[0044] The drain of the discharge transistor OFG(R) is connected to the power supply VDD, and its source is connected to the drain of the transmission transistor TG(R)A. Similarly, the drain of the discharge transistor OFG(L) is connected to the power supply VDD, and its source is connected to the drain of the transmission transistor TG(L)A. The discharge transistors OFG(R) and OFG(L) initialize, i.e., reset, the photoelectric conversion units PD(R) and PD(L) according to the drive signals applied to their respective gate electrodes. Resetting the photoelectric conversion units PD(R) and PD(L) means depleting the photoelectric conversion units PD(R) and PD(L).

[0045] For example, when the first transmission transistors TG(R)A and TG(L)A are turned on and the discharge transistors OFG(R) and OFG(L) are turned on, the photoelectric conversion units PD(R) and PD(L) are reset.

[0046] Additionally, the discharge transistors OFG(R) and OFG(L) form overflow paths, respectively, and discharge the charge overflowing from the photoelectric conversion units PD(R) and PD(L) to the power supply VDD. However, when the photoelectric conversion units PD(R) and PD(L) are reset, it is necessary to turn on the discharge transistors OFG(R) and OFG(L) and turn on the transfer gates TRZ(R) and TRZ(L).

[0047] (Example of the cross-sectional and planar structure of a sensor pixel PX) Next, we will refer to Figure 3 and Figures 4A to 4E An example illustrating the cross-sectional and planar construction of a sensor pixel PX. Figure 3 This is a cross-sectional view showing an example of the construction of a sensor pixel PX according to a first embodiment of the present invention. Figures 4A to 4E This is a plan view illustrating an example construction of a sensor pixel PX according to a first embodiment of the present invention. More specifically, Figure 3 It shows Figures 4A to 4D Examples of cross-sectional constructions taken along lines A1-A1' to A4-A4' from each of the plan views in the diagram. Figures 4A to 4D It shows Figure 3 Examples of planar construction at the corresponding positions LV1 to LV4 in the sectional view. Figure 4E This illustrates the case of viewing a sensor pixel PX from the rear 10b side, and more specifically, Figure 4A and Figure 4B The example shown is an enlarged planar construction where the planar diagrams LV1 and LV2 are overlapped and magnified.

[0048] The semiconductor substrate 10 is, for example, a silicon (Si) substrate, and the front side 10a and the back side 10b are (111) planar surfaces. In the pixel array section 111 provided on the semiconductor substrate 10, Figures 4A to 4E The sensor pixels PX shown are arranged in a repeating pattern along the X-axis and Y-axis. Each of the multiple sensor pixels PX has the same shape as the other sensor pixels PX in the planar view, or a shape that is flipped horizontally or vertically, and has a substantially similar structure.

[0049] like Figures 4A to 4D As shown, a plurality of sensor pixels PX are arranged side-by-side in a first direction (e.g., the horizontal direction of the light-receiving surface) parallel to the back surface 10b of the semiconductor substrate 10 (an example of the "first surface" of the present invention) and a second direction (e.g., the vertical direction of the light-receiving surface) perpendicular to the first direction. An inter-pixel isolation portion 30 is provided between one sensor pixel PX and another sensor pixel PX that are adjacent to each other in the first or second direction. One sensor pixel PX and another sensor pixel PX are isolated by the inter-pixel isolation portion 30. The structure of the inter-pixel isolation portion 30 will be described later.

[0050] In addition, such as Figure 3 and Figures 4A to 4E As shown, each of the plurality of sensor pixels PX includes pixel PX(R) (an example of the "first pixel" of the present invention) and pixel PX(L) (an example of the "second pixel" of the present invention). Pixels PX(R) and PX(L) are adjacent to each other in a first direction (e.g., Figures 3 to 4E (Horizontal direction of each light receiving surface).

[0051] like Figure 3 As shown, on the back side 10b of the semiconductor substrate 10, an on-chip lens OCL is disposed between an insulating film 11, such as a silicon oxide film (SiO film), and a color filter CF. For example, an on-chip lens OCL is disposed between pixels PX(R) and PX(L) contained in a pixel PX, separated by a color filter CF of the same color.

[0052] like Figures 3 to 4E As shown, the pixel PX(R) includes a photoelectric conversion unit PD(R) (the "first photoelectric conversion unit" of the present invention), a charge retention unit MEM(R) (an example of the "first charge retention unit" of the present invention), and a horizontal light-shielding unit LS1(R) (an example of the "first light-shielding unit" of the present invention). The photoelectric conversion unit PD(R) has the function of photoelectric conversion of light (hereinafter also referred to as incident light) that passes through the on-chip lens OCL, the color filter CF, and the insulating film 11 and is incident from the back side 10b of the semiconductor substrate 10 to generate charge. The charge retention unit MEM(R) is disposed on the opposite side of the back side 10b (i.e., the front side), and the photoelectric conversion unit PD(R) is located between the back side 10b and the charge retention unit MEM(R), and has the function of retaining the charge transferred from the photoelectric conversion unit PD(R). The horizontal light-shielding unit LS1(R) is disposed between the back side of the semiconductor substrate and the MEM(R).

[0053] Similarly, the pixel PX(L) includes a photoelectric conversion unit PD(L) (the "second photoelectric conversion unit" of the present invention), a charge retention unit MEM(L) (the "second charge retention unit" of the present invention), and a horizontal light-shielding unit LS1(L) (an example of the "second light-shielding unit" of the present invention). The photoelectric conversion unit PD(L) has the function of photoelectric conversion of incident light to generate charge. The charge retention unit MEM(L) is disposed on the front side 10a of the semiconductor substrate 10 and has the function of retaining the charge transferred from the photoelectric conversion unit PD(L). The horizontal light-shielding unit LS1(L) is disposed between the back side of the semiconductor substrate and the charge retention unit MEM(L).

[0054] like Figure 3As shown, the horizontal light-shielding portions LS1(R) and LS1(L) are arranged parallel to the back surface 10b of the semiconductor substrate 10, which serves as the light incident surface, and at the same depth from the back surface 10b.

[0055] like Figures 3 to 4E As shown, the inter-pixel isolation portion 30 includes a first inter-pixel isolation portion 31 and a second inter-pixel isolation portion 32. One sensor pixel PX and another sensor pixel PX are electrically isolated by the first inter-pixel isolation portion 31 and the second inter-pixel isolation portion 32. Furthermore, a space S30 (an example of the "second space" of the present invention) is provided between the first inter-pixel isolation portion 31 and the second inter-pixel isolation portion 32, and the space S30 enables one sensor pixel PX and another sensor pixel PX adjacent in a first direction (e.g., the horizontal direction of the light receiving surface) or a second direction (e.g., the vertical direction of the light receiving surface) to communicate with each other.

[0056] Space S30 includes, for example, a p-type region 12, and is located in a pn junction with a photoelectric conversion unit PD(R) or PD(L) that includes an n-type region. A depletion layer is formed in space S30 through the pn junction. Therefore, even in the region where space S30 exists, one sensor pixel PX and another sensor pixel PX are electrically isolated from each other.

[0057] Each of the plurality of sensor pixels PX is provided with an intra-pixel isolation portion 20, which isolates one adjacent pixel PX(R) and another pixel PX(L) in a first direction (e.g., the horizontal direction of the light-receiving surface). Pixels PX(R) and PX(L) are arranged in a line symmetric manner about a straight line CL that passes through the center of the pixel and is parallel to a second direction (e.g., the vertical direction of the light-receiving surface). The intra-pixel isolation portion 20 is arranged to overlap with the straight line CL (i.e., the axis of symmetry).

[0058] The intra-pixel isolation portion 20 includes a first intra-pixel isolation portion 21 and a second intra-pixel isolation portion 22. A space S20 (an example of the "first space" in this invention) is provided between the first intra-pixel isolation portion 21 and the second intra-pixel isolation portion 22, and the space S20 enables adjacent pixels PX(R) and PX(L) in a first direction (e.g., the horizontal direction of the light-receiving surface) to communicate with each other. The space S20 includes, for example, a p-type region 12, and is located in a pn junction with photoelectric conversion units PD(R) and PD(L), which include n-type regions. A depletion layer is formed in the space S20 through the pn junction. Therefore, in the region where the space S20 exists, adjacent pixels PX(R) and PX(L) are also electrically isolated from each other.

[0059] like Figure 3As shown, the semiconductor substrate 10 may have an n-type region 13 that has a higher n-type impurity concentration than the photoelectric conversion units PD(R) and PD(L) and is in contact with the p-type region 12. For example, the n-type region 13 may be provided in the region facing the intra-pixel isolation portion 20 across the p-type region 12 and in the region facing the inter-pixel isolation portion 30 across the p-type region 12. Among these regions, the n-type region 13 may be provided only on the side of the semiconductor substrate 10 closer to the front surface 10a of the semiconductor substrate 10 than the horizontal light-shielding portions LS1(R) and LS1(L). Due to the presence of the n-type region 13, the number of electrons stored in the photoelectric conversion unit PD can be increased, and the dynamic range can be extended.

[0060] Each of the charge holding portions MEM(R) and MEM(L) includes an n-type region 14 disposed on the front side 10a of the semiconductor substrate 10 and a p-type region 15 surrounding the n-type region 14. The n-type impurity concentration of the n-type region 14 may be the same as or different from that of the n-type regions constituting pixels PX(R) and PX(L). The p-type impurity concentration of the p-type region 15 may be the same as or different from that of the p-type region 12. The p-type region 15 may be integrally formed with the p-type region 12 or may not be integrally formed.

[0061] like Figure 3 As shown, the transfer gates TRZ(R) and TRZ(L) are provided with vertical gates VG that penetrate the p-type region 15 in the thickness direction of the semiconductor substrate 10. When the transfer gates TRZ(R) and TRZ(L) are turned on, a channel is formed along the vertical gate VG, and charge is transferred from the pixels PX(R) and PX(L) to the charge holding portions MEM(R) and MEM(L), respectively.

[0062] exist Figures 3 to 4E In the sensor pixel PX shown, the first intra-pixel isolation portion 21, the first inter-pixel isolation portion 31, the horizontal light-shielding portion LS1(R), and the horizontal light-shielding portion LST(L) are integrally formed. For example, each of the first intra-pixel isolation portion 21 (an example of a part of the "intra-pixel isolation portion" of the present invention) and the first inter-pixel isolation portion 31 (an example of a part of the "inter-pixel isolation portion" of the present invention) includes a first trench 51 disposed in the thickness direction of the semiconductor substrate 10 and a first metal film 61 disposed in the first trench 51 through an insulating film 55. The first trench 51 may penetrate the semiconductor substrate 10 in the thickness direction, or it may not penetrate it. Figure 3 This illustrates the case where the first trench 51 penetrates the semiconductor substrate 10 in the thickness direction.

[0063] Each of the horizontal light-shielding portions LS1(R) and LS1(L) includes a spatial portion 52 disposed in a horizontal direction orthogonal to the thickness direction of the semiconductor substrate 10, and a first metal film 61 disposed in the spatial portion 52 via an insulating film 55. The first trench 51 of the first pixel intra-isolation portion 21 and the first trench 51 of the inter-pixel isolation portion 31 are connected to each other through the spatial portion 52. The insulating film 55 in the first trench 51 and the insulating film 55 in the spatial portion 52 are integrally formed, and the first metal film 61 in the first trench 51 and the first metal film 61 in the spatial portion 52 are also integrally formed.

[0064] Furthermore, the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32 are integrally formed. For example, each of the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32 includes a second trench 53 penetrating the semiconductor substrate 10 in the thickness direction, and a second metal film 62 disposed in the second trench 53 via an insulating film 56.

[0065] The first metal film 61 and the second metal film 62 include, for example, materials comprising at least one of a single metal, a metal alloy, a metal nitride, and a metal silicide having light-shielding properties. Specifically, the first metal film 61 and the second metal film 62 include materials comprising at least one of aluminum (Al), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), chromium (Cr), iridium (Ir), platinum-iridium, titanium nitride (TiN), tungsten-silicon compounds, etc. The first metal film 61 and the second metal film 62 may or may not include the same materials.

[0066] In the plan view, an opening H1(R) is provided between the horizontal light-blocking portion LS1(R) and the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32 (an example of the "first opening" of the present invention). In the plan view, an opening H1(L) is provided between the horizontal light-blocking portion LS1(L) and the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32 (an example of the "second opening" of the present invention). Figure 4EAs shown in the plan view, the opening H1(R) between the horizontal light-shielding portion LS1(R) and the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32, and the opening H1(L) between the horizontal light-shielding portion LS1(L) and the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32 are symmetrical with respect to the straight line CL, which is the axis of symmetry, passes through the center of the sensor pixel PX, and is parallel to the second direction (e.g., the vertical direction of the light-receiving surface) orthogonal to the first direction (e.g., the horizontal direction of the light-receiving surface). In the plan view, the end portion EDG1(R) of the horizontal light-shielding portion LS1(R) (an example of the "first end" of the present invention) and the end portion EDG1(L) of the horizontal light-shielding portion LS1(L) (an example of the "second end" of the present invention) extend in directions that intersect obliquely with both the first and second directions.

[0067] That is, the opening H1(R) of pixel PX(R) and the opening H2(L) of pixel PX(L) are substantially symmetrical on both sides in the planar diagram, and also have ends that are not 90° relative to the axis of symmetry. This improves charge transport efficiency and parasitic light sensitivity (PLS).

[0068] The shapes of the openings H1(R) and H2(L) and their effects on charge transport and PLS will be explained in more detail. Figure 5A This is a plan view showing a horizontal light-shielding portion LS' and an opening H' provided in the horizontal light-shielding portion LS' according to a comparative example of the present invention. Figure 5B This is a plan view showing a horizontal light-shielding portion LS and an opening H provided in the horizontal light-shielding portion LS according to an embodiment of the present invention. Note that... Figure 5B The horizontal light-shielding portion LS and the opening H are schematically shown in the diagram. Figure 4E One of the horizontal light-shielding parts LS1(R) and LS1(L) shown, and one of the openings H1(R) and H1(L).

[0069] To achieve sufficient light-shielding effect on the charge-holding part using the light-shielding part, it is important to separate the opening of the light-shielding part from the light-focusing center of the pixel. Additionally, typically in image sensors, to suppress dark signals, an interface made of a material different from Si constituting the semiconductor substrate is formed as a p-type and filled with holes.

[0070] In both the comparative example and this embodiment, immediately after the photoelectric conversion unit is reset, the n-type semiconductor region is completely depleted. Here, as in Figure 5A In the comparative example shown, when the opening H' of the horizontal light-shielding portion LS' is rectangular, as the short side of the opening H' becomes shorter, the potential of the depletion portion of the n-type semiconductor region becomes shallower, and it becomes difficult to extend the depletion layer to the back side. On the other hand, when the opening H' of the horizontal light-shielding portion LS has a rectangular shape, as shown in the comparative example, the potential of the depletion portion of the n-type semiconductor region becomes shallower, and it becomes difficult to extend the depletion layer to the back side. Figure 5BIn the beveled configuration shown in this embodiment, the width of the opening H can be ensured, thereby increasing the potential of the n-type semiconductor region and allowing the depletion layer to extend to the back side. Therefore, the efficiency of the verification process can be improved. This enables improvements in charge transport efficiency and suppression of PLS.

[0071] (Effects of the first implementation plan) As described above, the imaging device 101 according to a first embodiment of the present invention includes: a semiconductor substrate 10 having a back surface 10b and a front surface 10a located on the opposite side of the back surface 10b; and a plurality of sensor pixels PX disposed on the semiconductor substrate 10. Each of the plurality of sensor pixels PX includes a pixel PX(R) and a pixel PX(L) adjacent to the pixel PX(R) in a first direction parallel to the back surface 10b. The pixel PX(R) includes: a photoelectric conversion unit (R) capable of photoelectric conversion of light incident from the back surface 10b side of the semiconductor substrate 10 to generate charge; a charge holding portion MEM(R) disposed on the opposite side of the back surface 10b from one side to the other, and capable of holding the charge transferred from the photoelectric conversion unit (R); and a horizontal light-shielding portion LS1(R) disposed between the back surface 10b and the charge holding portion MEM(R). The pixel PX (L) includes: a photoelectric conversion unit (L) capable of photoelectric conversion of light incident from the back side 10b of the semiconductor substrate 10 to generate charge; a charge holding part MEM (L) disposed on the opposite side of the back side 10b from one side to the other of the photoelectric conversion unit (L); and a horizontal light shielding part LS1 (L) disposed between the back side 10b and the charge holding part MEM (L).

[0072] In a plan view taken from the normal direction of the back surface 10b of the semiconductor substrate 10, the openings H1(R) and H1(L) in the horizontal light-shielding portion LS1(R) are symmetrical with respect to the straight line CL, which is a line passing through the center of the sensor pixel PX and is parallel to the second direction orthogonal to the first direction, serving as the axis of symmetry. In the plan view, the ends EDG1(R) and EDG1(L) of the horizontal light-shielding portion LS1(R) extend in directions that intersect both the first and second directions at an angle.

[0073] Accordingly, the horizontal light-shielding portions LS1(R) and LS1(L) can suppress light incident on the charge-holding portions MEM(R) and MEM(L), thereby reducing PLS. Furthermore, the opening H1(R) between the horizontal light-shielding portion LS1(R) and the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32, and the opening H1(L) between the horizontal light-shielding portion LS1(L) and the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32 are symmetrical with respect to the straight line CL passing through the center of the sensor pixel PX, which serves as the axis of symmetry. Therefore, the sensitivity difference of incident light between pixels PX(R) and PX(L) can be reduced. For example, the sensitivity difference of obliquely incident light incident on the back surface 10b of the semiconductor substrate 10 can be reduced, and the phase difference detection capability can be improved. Furthermore, the horizontal light-shielding portion LS1(R) has an oblique end EDG1(R), and the horizontal light-shielding portion LS1(L) has an oblique end EDG1(L). This enables the improvement of charge transfer efficiency from the photoelectric conversion units PD(R) and PD(L) to the charge holding units MEM(R) and MEM(L) and the suppression of PLS. In summary, this improves the performance of the imaging device.

[0074] <Second Implementation Plan> In the first embodiment described above, it has been shown that the horizontal light-shielding portions LS1(R) and LS1(L) are arranged one by one in the thickness direction (depth direction) of the semiconductor substrate. However, the embodiments of the present invention are not limited thereto. In the embodiments of the present invention, in a sensor pixel PX, two or more levels of horizontal light-shielding portions can be arranged alternately in the depth direction.

[0075] Figure 6 This is a cross-sectional view illustrating an example of the construction of a sensor pixel PXA according to a second embodiment of the present invention. Figures 7A to 7D This is a plan view illustrating an example construction of a sensor pixel PXA according to a second embodiment of the present invention. More specifically, Figure 6 This shows the segmentation along line B1-B1' to line B3-B3'. Figures 7A to 7C Examples of cross-sectional structures obtained from various plan views. Figures 7A to 7C It shows Figure 6 Examples of planar construction at the corresponding positions LV1 to LV3 in the sectional view. Figure 7D A magnified view shows a planar construction example of a sensor pixel PXA as viewed from the rear 10b side. More specifically, Figures 7A to 7C The plan views LV1 to LV3 shown are presented in an overlapping and enlarged manner.

[0076] like Figures 6 to 7DAs shown, similar to pixel PX according to the first embodiment, each of the plurality of sensor pixels PXA includes pixel PX(R) and pixel PX(L). Pixels PX(R) and PX(L) are in a first direction (e.g., Figures 6 to 7D They are adjacent to each other in the horizontal direction (as shown).

[0077] In addition to the horizontal light-shielding portion LS1(R), the pixel PX(R) also includes a horizontal light-shielding portion LS2(R) arranged alternately with the horizontal light-shielding portion LS1(R) in the depth direction (an example of the "third light-shielding portion" of the present invention). The horizontal light-shielding portion LS2(R) is disposed at a position closer to the front surface 10a of the semiconductor substrate 10 than the horizontal light-shielding portion LS1(R), between the back surface 10b of the semiconductor substrate 10 and the charge holding portion MEM(R). Figure 7D As shown, in pixel PX(R), there is an overlapping region OVL(R) where horizontal light-blocking part LS1(R) and horizontal light-blocking part LS2(R) overlap each other in the depth direction.

[0078] Similarly, in addition to the horizontal light-shielding portion LS1 (L), the pixel PX (L) also includes a horizontal light-shielding portion LS2 (L) arranged alternately with the horizontal light-shielding portion LS1 (L) in the depth direction (an example of the "fourth light-shielding portion" of the present invention). The horizontal light-shielding portion LS2 (L) is disposed between the back surface 10b of the semiconductor substrate 10 and the charge holding portion MEM (L), and is located closer to the front surface 10a of the semiconductor substrate 10 than the horizontal light-shielding portion LS1 (L). Figure 7D As shown, in pixel PX(L), there is an overlapping region OVL(L) where horizontal light-blocking parts LS1(L) and horizontal light-blocking parts LS2(L) overlap each other in the depth direction.

[0079] like Figure 6 As shown, the horizontal light-shielding portions LS2(R) and LS2(L) are configured to be parallel to the back surface 10b of the semiconductor substrate 10, which serves as the light incident surface, and at the same depth from the back surface 10b.

[0080] like Figure 6 and Figure 7A As shown, an opening H2(R) is provided between the horizontal light-blocking portion LS2(R) and the first pixel intra-isolation portion 21 and the first pixel inter-isolation portion 31 (an example of the "third opening" of the present invention). An opening H2(L) is provided between the horizontal light-blocking portion LS2(L) and the first pixel intra-isolation portion 21 and the first pixel inter-isolation portion 31 (an example of the "fourth opening" of the present invention).

[0081] In the plan view, the opening H2(R) provided between the horizontal light-blocking portion LS2(R) and the first pixel intra-isolation portion 21 and the first pixel inter-isolation portion 31, and the opening H2(L) provided between the horizontal light-blocking portion LS2 and the first pixel intra-isolation portion 21 and the first pixel inter-isolation portion 31, are relative to the center passing through the sensor pixel PXA as the axis of symmetry and are perpendicular to the second direction (e.g., Figures 7A to 7D The straight line CL, which is parallel to the vertical direction of each paper surface, is symmetrical.

[0082] In the plan view, the ends EDG2(R) and EDG2(L) of the horizontal light-shielding part LS2(R) extend in directions that intersect the first and second directions at an angle.

[0083] In the thickness direction (depth direction) of the semiconductor substrate 10, an opening H2(R) is alternately arranged between the horizontal light-shielding portion LS2(R) and the first pixel intra-isolation portion 21 and the first pixel inter-isolation portion 31, and an opening H1(R) is alternately arranged between the horizontal light-shielding portion LS1(R) and the second pixel intra-isolation portion 22 and the second pixel inter-isolation portion 32. Similarly, in the aforementioned depth direction, an opening H2(L) is alternately arranged between the horizontal light-shielding portion LS2(L) and the first pixel intra-isolation portion 21 and the first pixel inter-isolation portion 31, and an opening H1(L) is alternately arranged between the horizontal light-shielding portion LS1(L) and the second pixel intra-isolation portion 22 and the second pixel inter-isolation portion 32.

[0084] like Figure 6 and Figure 7A As shown, the horizontal light-blocking portion LS2(R) and the horizontal light-blocking portion LS2(L) are integrally formed with the second inter-pixel isolation portion 32, which is part of the inter-pixel isolation portion 30.

[0085] like Figure 6 and Figure 7C As shown, the horizontal light-blocking portion LS1(R) and the horizontal light-blocking portion LS1(L) and the first intra-pixel isolation portion 21, which is part of the intra-pixel isolation portion 20, are integrally formed. For example, as Figure 7D As shown, in the second direction ( Figure 7D In the direction perpendicular to the light-receiving surface, when the length of the first pixel isolation portion 21 is L1 and the length of the second pixel isolation portion 22 is L2, the length L1 is longer than the length L2 (L1 > L2). The horizontal light-shielding portions LS1(R) and LS1(L), which are closer to the charge-holding portions MEM(R) and MEM(L) than the horizontal light-shielding portions LS2(R) and LS2(L), are integrally formed with the first pixel isolation portion 21, which is longer than the second pixel isolation portion 22 in the second direction.

[0086] (Effects of the second implementation plan) As described above, in the sensor pixel PXA according to the second embodiment, pixel PX(R) further includes a horizontal light-shielding portion LS2(R) disposed between the back surface 10b and the charge holding portion MEM(R) and located closer to the back surface 10b than the horizontal light-shielding portion LS1(R). Pixel PX(L) further includes a horizontal light-shielding portion LS2(L) disposed between the back surface 10b and the charge holding portion MEM(L) and located closer to the back surface 10b than the horizontal light-shielding portion LS1(L).

[0087] Accordingly, since the horizontal light-shielding section LS2(R) and the horizontal light-shielding section LS2(L) can further suppress light incident on the charge-holding sections MEM(R) and MEM(L), the light-shielding ability of the charge-holding sections MEM(R) and MEM(L) can be further improved.

[0088] Furthermore, in the thickness direction (depth direction) of the semiconductor substrate 10, openings H1(R) between the horizontal light-shielding portion LS1(R) and the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32, and openings H2(R) between the horizontal light-shielding portion LS2(R) and the first intra-pixel isolation portion 21 and the first inter-pixel isolation portion 31 are alternately arranged. Similarly, openings H1(L) between the horizontal light-shielding portion LS1(L) and the second intra-pixel isolation portion 22 and the second inter-pixel isolation portion 32, and openings H2(L) between the horizontal light-shielding portion LS2(L) and the first intra-pixel isolation portion 21 and the first inter-pixel isolation portion 31 are also alternately arranged. Therefore, the optical path from the back surface 10b of the semiconductor substrate 10 to the charge-holding portions MEM(R) and MEM(L) is circuitous and can be extended to the charge-holding portions MEM(R) and MEM(L). Thus, the light-shielding capability for the charge-holding portions MEM(R) and MEM(L) can be further enhanced.

[0089] Furthermore, the horizontal light-shielding portions LS1(R) and LS1(L) located on the side closest to the front surface 10a of the semiconductor substrate 10 are integrally formed with the longest first intra-pixel isolation portion 20 among the intra-pixel isolation portions 21 located on the straight line CL (i.e., the axis of symmetry) passing through the center of the sensor pixel PX. Therefore, the optical path length from the back surface 10b of the semiconductor substrate 10 to the charge-holding portions MEM(R) and MEM(L) can be further extended. Therefore, the light-shielding capability for the charge-holding portions MEM(R) and MEM(L) can be further enhanced.

[0090] (A variation of the second implementation plan) (1) First variant example Figure 8 This is a cross-sectional view showing the construction of a sensor pixel PXB according to a first variation of a second embodiment of the present invention. Figure 9 This is a plan view illustrating the construction of a sensor pixel PXB according to a first variation of a second embodiment of the present invention. More specifically, Figure 8 This shows the cutting along line C1-C1'. Figure 9 The cross-sectional structure is obtained from the plan view. Figure 9 The planar configuration of the four sensor pixels PXB as viewed from the back side 10b is shown. More specifically, the horizontal light-shielding portions LS1(R) and LS2(R) and the horizontal light-shielding portions LS1(L) and LS2(L) arranged alternately in the thickness direction (depth direction) of the semiconductor substrate 10 are shown in an overlapping manner.

[0091] Figure 8 and Figure 9 The sensor pixel PXB shown is Figures 6 to 7D The difference in the sensor pixel PXA shown is that the space S20 provided in the pixel isolation portion 20 is wider. For example... Figure 9 As shown, for example, assuming that the width of space S20 in the second direction (the direction perpendicular to the light receiving surface in FIG7) is WS20, and the width of space S30 in the second direction is WS30, then the width WS20 is wider than the width WS30 (WS20 > WS30). Even when the width of space S30 in the first direction (the left-right direction of the light receiving surface in FIG7) is WS30, the condition WS20 > WS30 is still satisfied.

[0092] In this example, the intra-pixel isolation portion 20 includes only the first intra-pixel isolation portion 21 and does not include the second intra-pixel isolation portion 22, thereby forming a wider space S20 for the intra-pixel isolation portion 20.

[0093] According to the first variation of the second embodiment of the present invention, the sensor pixel PXB readily forms an overflow path 23 within the space S20 of the isolation portion 20 within the pixel. Even if one of the photoelectric conversion units PD(R) and PD(L) is saturated with charge, charge can be transferred from one of the photoelectric conversion units PD(R) and PD(L) to the other through the overflow path 23. Since the capacitance of both photoelectric conversion units PD(R) and PD(L) can be used to store signal charge, it helps to expand the dynamic range.

[0094] (2) Second variation Figure 10 This is a cross-sectional view showing the construction of a sensor pixel PXC according to a second variation of a second embodiment of the present invention. Figure 11 This is a plan view illustrating the construction of a sensor pixel PXC according to a second variation of a second embodiment of the present invention. More specifically, Figure 10 This shows the cutting along line D1-D1'. Figure 11 The cross-sectional structure is obtained from the plan view. Figure 11 The planar configuration of the four sensor pixel PXCs as viewed from the back side 10b is shown. More specifically, horizontal light-shielding portions LS1(R) and LS2(R) and horizontal light-shielding portions LS1(L) and LS2(L) are alternately arranged in the thickness direction (depth direction) of the semiconductor substrate 10 and are superimposed on each other.

[0095] Figure 10 and Figure 11 The sensor pixel PXC shown is Figures 6 to 7D The difference in the sensor pixel PXA shown is that the first metal film 61 is not embedded in the side of the intra-pixel isolation portion 20 that is closer to the back surface 10b (i.e., the light incident surface) than the horizontal light-shielding portions LS1(R) and LS1(L) (hereinafter also referred to as the light incident surface side). In the intra-pixel isolation portion 20, the portion on the light incident surface side is composed of a first trench 51 and an insulating film 55 embedded in the first trench 51.

[0096] In addition, with Figures 6 to 7D Similar to the sensor pixel PXA shown, the portion of the pixel isolation portion 20 that is closer to the front surface 10a than the horizontal light-shielding portions LS1(R) and LS1(L) is composed of a first trench 51, an insulating film 55 disposed in the first trench 51, and a first metal film 61 disposed in the first trench 51 through the insulating film 55.

[0097] According to the second embodiment of the second variation of the sensor pixel PXC, since the first metal film 61 is not embedded in the portion of the in-pixel isolation portion 20 on the light incident surface side, incident light can be prevented from being reflected by the surface of the first metal film 61 or absorbed by the first metal film 61. In particular, the end of the in-pixel isolation portion 20 located on the light incident surface side tends to strongly reflect incident light, but since the first metal film 61 is not provided in this portion, the reflection and absorption of incident light can be effectively suppressed. Therefore, it is expected that sensitivity will be improved due to the suppression of incident light absorption and flare will be suppressed due to the reduction of incident light reflectivity.

[0098] Note that, as Figure 11 As shown, in a second variation of the second embodiment of the present invention, similar to the first variation of the second embodiment, the space S20 provided in the pixel-in-pixel isolation portion 20 can be widened. For example, the pixel-in-pixel isolation portion 20 is constructed only with a first pixel-in-pixel isolation portion 21, without arranging a second pixel-in-pixel isolation portion 22, so that the space S20 of the pixel-in-pixel isolation portion 20 can be made wider. Therefore, as in the first variation of the second embodiment of the present invention, charge can move through the overflow path 23.

[0099] (3) Third variation Figure 12 This is a cross-sectional view showing the structure of a sensor pixel PXD according to a third variation of a second embodiment of the present invention. Figure 13 This is a plan view illustrating the construction of a sensor pixel PXD according to a third variation of a second embodiment of the present invention. More specifically, Figure 12 The cut along line E1-E1' is shown. Figure 13 The cross-sectional structure is obtained from the plan view. Figure 13 The planar configuration of the four sensor pixel PXDs as viewed from the back side 10b is shown, and more specifically, the planar configuration in the thickness direction (depth direction) of the semiconductor substrate 10 is shown. The horizontal light-shielding sections LS1(R) and LS2(R) and LS1(L) and LS2(L) are shown in an overlapping manner.

[0100] exist Figure 12 and Figure 13 In the sensor pixel PXD shown, with Figures 6 to 7D The first difference in the sensor pixel PXA shown is that the first metal film 61 is not embedded in all portions of the in-pixel isolation portion 20 from the back side 10b to the front side 10a. The in-pixel isolation portion 20 includes a first trench 51 and an insulating film 55 embedded in the first trench 51.

[0101] Furthermore, the second difference is that the intra-pixel isolation portion 20 is formed to be narrower than the inter-pixel isolation portion 30. For example... Figure 13 As shown, in the planar diagram, the line width of the intra-pixel isolation portion 20 is narrower than the line width of the inter-pixel isolation portion 30. When the line width of the intra-pixel isolation portion 20 is W20 and the line width of the inter-pixel isolation portion 30 is W30, W20 < ​​W30 is satisfied.

[0102] According to the third variation of the second embodiment of the present invention, the sensor pixel PXD, since the first metal film 61 is not buried in the pixel isolation portion 20, can prevent incident light from being reflected by the surface of the first metal film 60 or absorbed by the first metal film 61. Therefore, it is expected that the sensitivity will be improved by suppressing the absorption of incident light and that flare will be suppressed by reducing the reflectivity of incident light.

[0103] Furthermore, since the intra-pixel isolation portion 20 is formed to be narrower than the inter-pixel isolation portion 30, it is easier to fill the intra-pixel isolation portion 20 with the insulating film 55. Moreover, the insulating film 56 of the inter-pixel isolation portion 30 and the insulating film of the intra-pixel isolation portion 20 can be formed simultaneously in the same process. For example, when the insulating film 56 of the inter-pixel isolation portion 30 and the insulating film 55 of the intra-pixel isolation portion 20 are formed simultaneously by atomic layer deposition (ALD), only the first trench 51 of the intra-pixel isolation portion 20 will be closed by the insulating film 55 before the second trench 53 of the inter-pixel isolation portion 30 is closed by the insulating film 56.

[0104] Note that, as Figure 13 As shown, in a third variation of the second embodiment of the present invention, similar to the first variation of the second embodiment, the space S20 provided in the intra-pixel isolation portion 20 can be widened. For example, the intra-pixel isolation portion 20 is constructed only with a first intra-pixel isolation portion 21, and no second intra-pixel isolation portion 22 is arranged, thereby making the space S20 of the intra-pixel isolation portion 20 wider. Therefore, as in the first variation of the second embodiment of the present invention, charge can move through the overflow path 23.

[0105] (4) Fourth variation Figure 14 This is a cross-sectional view illustrating the construction of a sensor pixel PXE according to a fourth variation of a second embodiment of the present invention. Figure 14 In the sensor pixel PXE shown, with Figures 6 to 7D The first difference in the sensor pixel PXA shown is that the first trench 51 constituting the intra-pixel isolation portion 20 is not provided on the side closer to the back surface 10b than the horizontal light-shielding portions LS1(R) and LS1(L) (i.e., the light incident surface side), and the insulating film 55 and the first metal film 61 embedded in the first trench 51 are not provided. In the intra-pixel isolation portion 20, the portion on the light incident surface side only includes the p-type region 12.

[0106] Furthermore, the second difference is that the second trench 53 constituting the inter-pixel isolation portion 30 is not provided on the side closer to the back surface 10b than the horizontal light-shielding portions LS2(R) and LS2(L) (i.e., the light incident surface side), and the insulating film 56 and the second metal film 62 embedded in the second trench 53 are not provided. In the inter-pixel isolation portion 30, the portion on the light incident surface side is also formed only by the p-type region 12.

[0107] According to the fourth variation of the second embodiment of the present invention, the sensor pixel PXE, since the first metal film 61 is not embedded in the light-incident surface side portion of the intra-pixel isolation portion 20, can prevent incident light from being reflected or absorbed by the surface of the first metal film 61. Furthermore, since the second metal film 62 is not embedded in either the light-incident surface side portion of the intra-pixel isolation portion 20 or the light-incident surface side portion of the inter-pixel isolation portion 30, it can prevent incident light from being reflected or absorbed by the surface of the second metal film 62. Therefore, it is further expected that sensitivity will be improved by suppressing the absorption of incident light, and flare will be suppressed by reducing the reflectivity of incident light.

[0108] Furthermore, the first groove 51 is not provided in the portion of the intra-pixel isolation section 20 on the light incident surface side. Therefore, as Figure 14 As shown, an overflow path 23 can be provided in the portion of the isolation section 20 within the pixel on the light incident surface side. The overflow path 23 includes, for example, an n-type region. In the portion on the light incident surface side, charge can move through the overflow path 23.

[0109] (Fifth variation) Figure 15A and Figure 15B This is a cross-sectional view showing the construction of a sensor pixel PXF according to a fifth variation of a second embodiment of the present invention. Figures 16A to 16E This is a plan view illustrating the construction of a sensor pixel PXF according to a fifth variation of a second embodiment of the present invention. More specifically, Figure 15A This illustrates the cutting from line FA1-FA1' to line FA5-FA5'. Figures 16A to 16E The cross-sectional structure is obtained from the plan view. Figures 16A to 16E It shows Figure 15A and Figure 15B The planar construction at the corresponding positions LV1 to LV5 in the corresponding sectional view.

[0110] Figures 15A to 16E The sensor pixel PXF shown is Figures 6 to 7D The difference between the sensor pixel PXA shown is that the trench constituting the inter-pixel isolation portion 30 is provided deep from the front side 10a to the back side 10b of the semiconductor substrate 10, while the trench constituting the intra-pixel isolation portion 20 is not provided from the front side 10a to the back side 10b of the semiconductor substrate 10 and is not deep.

[0111] This will be explained in more detail. The inter-pixel isolation portion 30 includes a first inter-pixel isolation portion 31 and a second inter-pixel isolation portion 32. The first inter-pixel isolation portion 31 includes a first trench 51, an insulating film 55 disposed in the first trench 51, and a first metal film 61 embedded in the first trench 51 through the insulating film 55. The second inter-pixel isolation portion 32 includes a second trench 53, an insulating film 56 disposed in the second trench 53, and a second metal film 62 embedded in the second trench 53 through the insulating film 56. A space S30, including, for example, a p-type region 12, is disposed between the first inter-pixel isolation portion 31 and the second inter-pixel isolation portion 32.

[0112] Furthermore, the intra-pixel isolation portion 20 includes a first intra-pixel isolation portion 21 and a second intra-pixel isolation portion 22. The first intra-pixel isolation portion 21 includes a first trench 51, an insulating film 55 disposed in the first trench 51, and a first metal film 61 embedded in the first trench 51 through the insulating film 55. The second intra-pixel isolation portion 22 includes a second trench 53, an insulating film 56 disposed in the second trench 53, and a second metal film 62 embedded in the second trench 53 through the insulating film 56. A space S20 including, for example, a p-type region 12 is disposed between the first intra-pixel isolation portion 21 and the second intra-pixel isolation portion 22.

[0113] In the sensor pixel PXF, the first trench 51 (hereinafter, first trench 51B; an example of the "first trench" of the present invention) constituting the first inter-pixel isolation portion 31 and the second trench 53 (hereinafter, second trench 53B) constituting the second inter-pixel isolation portion 32 are relatively deep from the front side 10a to the back side 10b of the semiconductor substrate 10. Therefore, the first metal film 61 in the first trench 51B and the second metal film 62 in the second trench 53B are also configured to extend from the front side 10a to the back side 10b of the semiconductor substrate 10.

[0114] On the other hand, a first trench 51 (hereinafter, first trench 51A; an example of the "first trench" of the present invention) constituting the first pixel in-situ isolation portion 21 and a second trench 53 (hereinafter, second trench 53A) constituting the second pixel in-situ isolation portion 22 are provided from the front side 10a of the semiconductor substrate 10 to the horizontal light-shielding portions LS1(R) and LS1(L). The first trench 51A and the second trench 53A are not as deep as the first trench 51B and the second trench 53B, and are not provided between the horizontal light-shielding portions LS1(R) and LS1(L) and the back side 10b. The first trench 51A, the first metal film 61 in the first trench 51A and the second metal film 62 in the second trench 53A do not reach the back side 10b.

[0115] In the first pixel isolation portion 21, the portion between the horizontal light-shielding portions LS1(R) and LS1(L) and the back surface 10b is formed, for example, by a p-type region 12. Similarly, the portion of the second pixel isolation portion 22 located between the horizontal light-shielding portions LS1(R) and LS1(L) and the back surface 10b is formed, for example, by a p-type region 12.

[0116] Furthermore, in the sensor pixel PXF, the intra-pixel isolation portion 21 and the inter-pixel isolation portion 31 are integrally formed, but the depths of their trenches differ. The trenches in the inter-pixel isolation portion 31 are deeper than those in the intra-pixel isolation portion 21. Similarly, the intra-pixel isolation portion 22 and the inter-pixel isolation portion 32 are integrally formed, but the depths of their trenches differ. The trenches in the inter-pixel isolation portion 32 are deeper than those in the intra-pixel isolation portion 22.

[0117] The sensor pixel PXF of the fifth variation of the second embodiment of the present invention, by having the above-described structure, is able to suppress light scattering and reflection while reducing electrical and optical crosstalk.

[0118] (Sixth variation) (1) Construction Figure 17 This is a cross-sectional view showing the construction of a sensor pixel PXG according to a sixth variation of a second embodiment of the present invention. Figure 18A and 18B This is a plan view illustrating the construction of a sensor pixel PXG according to a sixth variation of a second embodiment of the present invention. More specifically, Figure 17 This shows the cutting along lines GB1-GB1' and GB5-GB5'. Figure 18A and Figure 18B The cross-sectional structure is obtained from the plan view. Figure 18A and Figure 18B It shows Figure 17 The planar construction at the corresponding positions LV1 and LV5 in the sectional view. Note that... Figure 17 The planar construction of each position from LV2 to LV4 in the sectional view and Figures 16B to 16D The planar construction shown is the same, therefore repeated illustrations are omitted. Furthermore, this is achieved by cutting along lines GA1-GA1' and GA5-GA5'. Figure 18A and Figure 18B The cross-sectional structures obtained from the plan view and Figure 15A The cross-sectional structures shown are identical, so repeated illustrations have been omitted.

[0119] Figure 17 A to Figure 18B The sensor pixel PXG shown is Figures 15A to 16EThe difference in the sensor pixel PXF shown is that the intra-pixel isolation portion 21 and the inter-pixel isolation portion 31 are not directly connected, but are connected through horizontal light-shielding portions LS1(R) and LS1(L). In the sensor pixel PXG, the first trench 51A constituting the intra-pixel isolation portion 21 and the first trench 51B constituting the inter-pixel isolation portion 31 are not integral. The first trench 51A and the first trench 51B are connected (communicated) through the space portion 52 constituting the horizontal light-shielding portions LS1(R) and LS1(L). The first metal film 61 is embedded in the first trenches 51A and 51B, which are connected to the space portion 52 through the second trench, with the insulating film 55 in between.

[0120] In the first pixel isolation section 21, the first groove 51A is not provided between the positions of the horizontal light-shielding sections LS1(R) and LS1(L) and the back surface 10b. In the first pixel isolation section 21, the portion between the positions of the horizontal light-shielding sections LS1(R) and LS1(L) and the back surface 10b is formed by, for example, a p-type region 12.

[0121] Similar to the sensor pixel PXF of the fifth variant of the second embodiment of the present invention, the sensor pixel PXG of the sixth variant of the second embodiment of the present invention is able to suppress light scattering and reflection while reducing electrical and optical crosstalk.

[0122] (2) Production methods Figure 19 This is a cross-sectional view showing the method for forming a trench according to a sixth variation of the second embodiment of the present invention, in the order of steps. Figure 19 In step ST1, photoelectric conversion units PD(R) and PD(L), not shown, are fabricated (see reference). Figure 18A Semiconductor substrate 10, etc. Next, on the front side 10a of semiconductor substrate 10 (in... Figure 19 A hard mask (not shown) is formed on the middle and lower surfaces. The hard mask includes an insulating material such as a silicon nitride film (SiN film) or a silicon oxide film (SiO film).

[0123] Next, trench T1 is formed by partially excavating the front side 10a of the semiconductor substrate 10 using dry etching with a hard mask. The depth of trench T1 at this time corresponds to... Figure 17 The depth of the first trench shown.

[0124] Next, sidewalls SW are formed to cover the sides and bottom of trench T1. When forming sidewalls SW, an insulating film, including, for example, a SiN film or a SiO film, is formed to cover the inner surface of trench T1, i.e., the sides and bottom of trench T1. Then, only the insulating film covering the bottom of trench T1 is removed by dry etching back.

[0125] Next, as Figure 19 As shown in step ST2, the semiconductor substrate 10 is partially removed by dry etching back to further excavate the bottom surface of the trench T1. At this time, for example, the bottom surface of the trench T1 is further excavated to a depth corresponding to the thickness of the horizontal light-shielding portions LS1(R) and LS2(L) (see reference). Figure 17 and Figure 16D ).

[0126] Next, a predetermined alkaline aqueous solution is injected into trench T1, and wet etching is performed to partially remove the Si (111) surface constituting the semiconductor substrate 10. As an alkaline aqueous solution, KOH, NaOH, CsOH, etc. can be used in the case of inorganic solutions, and EDP (ethylenediamine catechol aqueous solution), N2H4 (hydrazine), NH4OH (ammonium hydroxide), TMAH (tetramethylammonium hydroxide), etc. can be used in the case of organic solutions.

[0127] Here, anisotropic etching is performed, utilizing the characteristic that the etching rate varies according to the crystal orientation of Si(111). Specifically, in the Si(111) substrate, the etching rate relative to the direction having three Si back bonds is... <111> Direction (i.e., <110> The etching rate in the direction (i.e., the etching rate in the direction with one or two Si back bonds) is high enough.

[0128] Therefore, in this embodiment, etching is performed in the X-axis direction while almost no etching is performed in the Y-axis and Z-axis directions. Thus, a space T2 communicating with the trench T1 is formed inside the semiconductor substrate 10, which serves as a Si (111) substrate. The space T2 is in which horizontal light-shielding portions LS1 (R) and LS2 (L) are arranged (see reference). Figure 17 and Figure 16D ) Space section 52 (refer to) Figure 17 Note that the etching time of the alkaline aqueous solution used for the semiconductor substrate 10 can be adjusted. <110> The distance of etching in the direction.

[0129] Next, as Figure 19 As shown in step ST3, the photoresist is embedded in the trenches T1 to form the first trench 51A (refer to...). Figure 17 In the grooves. Then, as Figure 19 As shown in step ST4, dry etching is performed using a photoresist to further partially excavate the surface 10a of the semiconductor substrate 10 to form trench T3. Trench T3 becomes as follows: Figure 17The first trench 51B and the second trench 53A are shown to be as deep as indicated. After forming the trench T3, the photoresist PR is removed, and the sidewalls SW are further removed. Through this process, a trench suitable for the sixth variation of the second embodiment of the present invention is formed.

[0130] <Examples of Electronic Device Applications> The technology according to the present invention (the technology) can be applied to electronic devices. Figure 20 This is a diagram illustrating an example of the construction of an electronic device 600 to which this technology can be applied. (See diagram for example.) Figure 20 As shown, the electronic device 600 includes a solid-state imaging device 601, an optical lens 602, a shutter device 603, a drive circuit 604, and a signal processing circuit 605. The electronic device 600 is, for example, an electronic device such as a camera.

[0131] Electronic device 600 includes a camera device 101 as a solid-state camera device 601, the camera device 101 including the above-described... Figure 3 , Figure 6 , Figure 8 , Figure 10 , Figure 12 , Figure 14 , Figure 15A , Figure 15B and Figure 17 The sensor pixels shown are one or more of PX, PXA, PXB, PXC, PXD, PXE, PXF, and PXG. Therefore, the solid-state imaging device 601 can achieve improved charge transfer efficiency and PLS suppression, and thus improve performance.

[0132] An optical lens 602 forms an image of the image light (incident light 606) from the subject on the imaging surface of the solid-state imaging device 601. Therefore, the solid-state imaging device 601 accumulates signal charge over a certain period of time. A shutter device 603 controls the illumination period and the blocking period of the solid-state imaging device 601. A drive circuit 604 supplies drive signals for controlling the transmission operation of the solid-state imaging device 601 and the shutter operation of the shutter device 603. Based on the drive signals (timing signals) supplied from the drive circuit 604, the solid-state imaging device 601 performs signal transmission. A signal processing circuit 605 performs various types of signal processing on the signals (pixel signals) output from the solid-state imaging device 601. The processed video signal is stored in a storage medium such as a memory, or output to a monitor.

[0133] Note that electronic device 600 is not necessarily a camera, but can be other electronic devices. For example, electronic device 600 can be a camera device such as a camera module used in mobile devices such as mobile phones.

[0134] <Examples of applications of moving objects> The technology according to the present invention (the technology) can be applied to a variety of products. For example, the technology according to the present invention can be implemented in the form of a device installed on any type of mobile body such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobile devices, airplanes, drones, ships, and robots.

[0135] Figure 21 This is a block diagram illustrating an example of a schematic construction of a vehicle control system, which is an example of a mobile body control system to which the technology according to the present invention can be applied.

[0136] The vehicle control system 12000 includes multiple electronic control units interconnected via a communication network 12001. Figure 21 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. Furthermore, as part of the functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0137] The drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various types of programs. For example, the drive system control unit 12010 is used as a control device for devices such as an internal combustion engine or drive motor for generating vehicle driving force, a drive force transmission mechanism for transmitting driving force to the wheels, a steering mechanism for adjusting the vehicle's steering angle, and a braking device for generating vehicle braking force.

[0138] The body system control unit 12020 controls the operation of various types of devices installed on the vehicle body according to various types of programs. For example, the body system control unit 12020 is used as a control device for keyless entry systems, smart key systems, power windows, or various lights such as headlights, reversing lights, brake lights, turn signals, or fog lights. In this case, radio waves or signals of various types of switches sent from a keyless entry device can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signal inputs and controls the vehicle's door locks, power windows, lights, etc.

[0139] The exterior information detection unit 12030 detects information about the exterior of the vehicle, including information from the vehicle control system 12000. For example, the exterior information detection unit 12030 is connected to a camera unit 12031. The exterior information detection unit 12030 instructs the camera unit 12031 to provide images of the exterior of the vehicle, and then receives the images from the camera unit 12031. Based on the received images, the exterior information detection unit 12030 processes the received images to detect objects such as people, vehicles, obstacles, signs, or characters on the road surface, or processes the received images to detect the distance to objects.

[0140] The camera unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The camera unit 12031 can output the electrical signal as an image or as ranging information. Furthermore, the light received by the camera unit 12031 can be visible light or invisible light such as infrared light.

[0141] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected, for example, to a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that captures images of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level, or determine whether the driver is dozing off.

[0142] The microcomputer 12051 can calculate control target values ​​for the drive force generating device, steering mechanism, or braking device based on information about the exterior or interior of the vehicle obtained by the exterior information detection unit 12030 or the interior information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing advanced driver assistance system (ADAS) functions, including collision avoidance or impact mitigation, distance-based following, speed maintenance, collision warning, or lane departure warning.

[0143] Furthermore, by controlling the drive force generating device, steering mechanism, or braking device based on information about the exterior or interior of the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 can perform cooperative control aimed at achieving autonomous driving (e.g., operating the vehicle without input from the driver).

[0144] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on information about the exterior of the vehicle obtained by the exterior information detection unit 12030. For example, the microcomputer 12051 can perform coordinated control aimed at preventing glare by controlling the headlights to switch from high beam to low beam, for example, based on the position of the vehicle ahead or oncoming vehicle detected by the exterior information detection unit 12030.

[0145] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or audibly notifying passengers of the vehicle or external to the vehicle. Figure 21 In the example, an audio speaker 12061, a display unit 12062, and a dashboard 12063 are shown as output devices. For example, the display unit 12062 may include at least one of an in-vehicle display and a head-up display.

[0146] Figure 22 This is a diagram showing an example of the mounting location of the camera unit 12031.

[0147] exist Figure 22 In the vehicle 12100, camera units 12101, 12102, 12103, 12104 and 12105 are used as camera unit 12031.

[0148] Camera units 12101, 12102, 12103, 12104, and 12105 are, for example, positioned on the front nose, rearview mirrors, rear bumper, and rear door of vehicle 12100, as well as on the upper part of the windshield inside the passenger compartment. Camera unit 12101 on the front nose and camera unit 12105 on the upper part of the windshield inside the passenger compartment primarily acquire images of the front of vehicle 12100. Camera units 12102 and 12103 on the rearview mirrors primarily acquire images of the sides of vehicle 12100. Camera unit 12104 on the rear bumper or rear door primarily acquires images of the rear of vehicle 12100. The front images acquired by camera units 12101 and 12105 are mainly used to detect vehicles, pedestrians, obstacles, traffic signals, traffic signs, and lanes ahead.

[0149] Notice, Figure 22Examples of the camera ranges of camera units 12101 to 12104 are shown. Camera range 12111 represents the camera range of camera unit 12101 located on the front nose. Camera ranges 12112 and 12113 represent the camera ranges of camera units 12102 and 12103 located on the rearview mirrors, respectively. Camera range 12114 represents the camera range of camera unit 12104 located on the rear bumper or rear door. For example, by overlaying the image data captured by camera units 12101 to 12104, a bird's-eye view of the vehicle 12100 viewed from above is obtained.

[0150] At least one of the camera units 12101 to 12104 may have the function of obtaining distance information. For example, at least one of the camera units 12101 to 12104 may be a stereo camera composed of multiple camera elements, or may be a camera element having pixels for phase difference detection.

[0151] For example, based on distance information obtained from camera units 12101 to 12104, microcomputer 12051 can determine the distances to various three-dimensional objects within the camera ranges 12111 to 12114 and the time-varying distances (relative speed to vehicle 12100), thereby extracting the nearest three-dimensional object as the vehicle ahead, particularly the nearest three-dimensional object existing on the driving path of vehicle 12100 and traveling at a predetermined speed (e.g., equal to or greater than 0 km / h) in approximately the same direction as vehicle 12100. Furthermore, microcomputer 12051 can preset the vehicle-to-the-front distance to be maintained and execute automatic braking control (including stop-and-go control) or automatic acceleration control (including start-and-go control), etc. Therefore, it is possible to perform cooperative control for autonomous driving, aiming to operate the vehicle in a driver-controlled manner, etc.

[0152] For example, based on distance information obtained from camera units 12101 to 12104, microcomputer 12501 can classify three-dimensional object data into three-dimensional object data for two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, microcomputer 12051 identifies obstacles around vehicle 12100 as obstacles that the driver of vehicle 12100 can visually recognize and obstacles that the driver of vehicle 12100 cannot visually recognize. Then, microcomputer 12051 determines a collision risk to indicate the degree of risk of collision with each obstacle. If the collision risk is equal to or higher than a set value and therefore there is a possibility of collision, microcomputer 12051 outputs a warning to the driver through audio speaker 12061 or display unit 12062, and executes forced deceleration or evasive steering through drive system control unit 12010. Microcomputer 12051 can thus assist driving to avoid collisions.

[0153] At least one of the camera units 12101 to 12104 can be an infrared camera that detects infrared light. The microcomputer 12051 can identify a pedestrian, for example, by determining whether a pedestrian exists in the images captured by the camera units 12101 to 12104. This pedestrian identification is performed, for example, by the following steps: extracting feature points from the images of the camera units 12101 to 12104, which are infrared cameras; and performing pattern matching processing on a series of feature points representing the outline of an object to determine whether it is a pedestrian. When the microcomputer 12051 determines that a pedestrian exists in the images of the camera units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 so that a square outline for emphasis is displayed superimposed on the identified pedestrian. The sound / image output unit 12052 can also control the display unit 12062 to display an icon or similar symbol representing a pedestrian at a desired location.

[0154] Examples of vehicle control systems to which the technology according to the present invention can be applied have been described above. The technology according to the present invention can be applied to the camera unit 12031, etc., in the above-described configuration. Specifically, including... Figure 3 , Figure 6 , Figure 8 , Figure 10 , Figure 12 , Figure 14 , Figure 15A , Figure 15B and Figure 17The imaging device 101, which incorporates one or more of the sensor pixels PX, PXA, PXB, PXC, PXD, PXE, PXF, and PXG shown, can be applied to the imaging unit 12031. By applying the technology of the present invention to the imaging unit 12031, it is possible to obtain images that are easier to view, thereby reducing driver fatigue.

[0155] <Other Implementation Plans> As described above, the present invention has been illustrated by way of embodiments, modifications, and application examples, but it should not be construed that the description and drawings, which form part of the invention, limit the invention. Various alternative embodiments, examples, and operational techniques will be apparent to those skilled in the art according to the present invention. Of course, this technique includes various embodiments not described herein. At least one of various omissions, substitutions, or modifications of components can be made without departing from the spirit of the above embodiments and modifications. Furthermore, the effects described in this specification are merely illustrative; the effects are not limited to those described herein, and other effects may also exist.

[0156] Note that the present invention may also have the following configuration. (1) A light detection device, comprising: A semiconductor substrate having a first side and a second side located opposite to the first side; and Multiple sensor pixels are disposed on the semiconductor substrate, wherein Each of the plurality of sensor pixels includes: The first pixel, and The second pixel is adjacent to the first pixel in a first direction parallel to the first surface. The first pixel includes: The first photoelectric conversion unit is capable of photoelectric conversion of light incident from the first surface to generate electric charge. A first charge holding portion is disposed on the opposite side of the first surface, and the first photoelectric conversion unit is located between the first surface and the first charge holding portion. The first charge holding portion is capable of holding the charge transferred from the first photoelectric conversion unit. A first light-shielding portion is disposed between the first surface and the first charge-holding portion. The second pixel includes: The second photoelectric conversion unit is capable of photoelectric conversion of light incident from the first surface to generate electric charge. A second charge holding portion is disposed on the opposite side of the first surface, and the second photoelectric conversion unit is located between the first surface and the second charge holding portion, and is capable of holding the charge transferred from the second photoelectric conversion unit. The second light-shielding part is disposed between the first surface and the second charge-holding part. In a plan view taken from the normal direction of the first surface, the first opening in the first light-shielding part and the second opening in the second light-shielding part are axially symmetrical, with a straight line passing through the center of the sensor pixel and parallel to a second direction orthogonal to the first direction as the axis of symmetry. In the plan view, the first light-shielding portion extends along the first end of the first opening and the second light-shielding portion extends along the second end of the second opening in a direction that intersects both the first direction and the second direction at an inclination. (2) According to the light detection device described in (1) above, the first light-blocking part and the second light-blocking part are configured to be parallel to the first surface and located at the same depth from the first surface. (3) According to the optical detection device described in (1) or (2) above, wherein Each of the plurality of sensor pixels further includes an intra-pixel isolation portion, which is arranged at a position overlapping the axis of symmetry between the first pixel and the second pixel. (4) According to the optical detection device described in (3) above, wherein The intra-pixel isolation portion includes: The isolation portion within the first pixel; and The second pixel-in-isolation portion faces the first pixel-in-isolation portion in the second direction, and A first space is provided between the isolation portion within the first pixel and the isolation portion within the second pixel, allowing the first pixel and the second pixel to communicate with each other. (5) According to the light detection device described in (4) above, the length of the isolation portion within the first pixel in the second direction is longer than the length of the isolation portion within the second pixel in the second direction. (6) According to the optical detection device described in (4) or (5) above, wherein Assuming that the direction from one of the first surface and the second surface to the other is the thickness direction of the semiconductor substrate, The first pixel-in-interval isolation portion includes: A first trench is disposed in the thickness direction of the semiconductor substrate; and A first metal film is disposed in the first trench through an insulating film. (7) According to the light detection device described in (6) above, in the thickness direction, the first groove is provided from the second surface to the first light-shielding part and the second light-shielding part, and the first groove is not provided from the first light-shielding part and the second light-shielding part to the first surface. (8) According to any one of (4) to (7) above, the light detection device wherein each of the first light-shielding portion and the second light-shielding portion is integrally formed with the first pixel isolation portion. (9) The light detection apparatus according to any one of (4) to (8) above further includes an inter-pixel isolation portion disposed on the semiconductor substrate and arranged between one adjacent sensor pixel and another of the plurality of sensor pixels, wherein, The inter-pixel isolation portion is provided with a second space that allows the one sensor pixel and the other sensor pixel to communicate with each other, and In the plan view, the first space is wider than the second space. (10) According to any one of (1) to (9) above, the light detection device, wherein, The first pixel further includes a third light-shielding portion, which is disposed at a position closer to the first surface than the first light-shielding portion between the first surface and the first charge-holding portion. The second pixel further includes a fourth light-shielding portion, which is disposed at a position closer to the first surface than the second light-shielding portion, between the first surface and the second charge-holding portion. (11) According to the light detection device of (10) above, the third light-shielding part and the fourth light-shielding part are configured to be parallel to the first surface and located at the same depth from the first surface. (12) According to the optical detection device described in (10) or (11) above, wherein, The third opening in the third light-shielding part and the fourth opening in the fourth light-shielding part are linearly symmetrical in the plan view, with the straight line as the axis of symmetry. In the plan view, the third light-shielding portion extends along the third end of the third opening and the fourth light-shielding portion extends along the fourth end of the fourth opening in a direction that intersects both the first direction and the second direction at an inclination. (13) According to the optical detection device described in (12) above, wherein, Assuming that the direction from one of the first surface and the second surface to the other is the thickness direction of the semiconductor substrate, The first opening and the third opening are arranged alternately in the thickness direction, and The second opening and the fourth opening are arranged alternately in the thickness direction. (14) The light detection apparatus according to any one of (10) to (13) above further includes an inter-pixel isolation portion, wherein the inter-pixel isolation portion is disposed on the semiconductor substrate and arranged between adjacent sensor pixels and other sensor pixels in the plurality of sensor pixels, wherein, The third light-shielding portion and the fourth light-shielding portion are integrally formed with a part of the inter-pixel isolation portion. (15) The light detection apparatus according to any one of (1) to (14) above further includes an inter-pixel isolation portion, wherein the inter-pixel isolation portion is disposed on the semiconductor substrate and arranged between adjacent sensor pixels and other sensor pixels in the plurality of sensor pixels, wherein, Each of the plurality of sensor pixels further includes an intra-pixel isolation portion, the intra-pixel isolation portion being arranged at a position overlapping the axis of symmetry between the first pixel and the second pixel. Assuming that the direction from one of the first surface and the second surface to the other is the thickness direction of the semiconductor substrate, A portion of the intra-pixel isolation portion and another portion of the inter-pixel isolation portion each include a first groove disposed along the thickness direction. Each of the first light-shielding portion and the second light-shielding portion has a spatial portion disposed along a direction intersecting the thickness direction of the semiconductor substrate. The first trench included in a portion of the intra-pixel isolation portion and the first trench included in another portion of the inter-pixel isolation portion are connected to each other via the spatial portion, and A first metal film is disposed in the first trench and the space portion through an insulating film. (16) According to the optical detection device described in (15) above, wherein, Assuming that the first trench included in a portion of the intra-pixel isolation portion is defined as first trench A, and the first trench included in another portion of the inter-pixel isolation portion is defined as first trench B, In the thickness direction, The first groove A is provided from the first surface to the first light-shielding portion and the second light-shielding portion, and the first groove A is not provided from the first light-shielding portion and the second light-shielding portion to the first surface. The first groove B extends from the first surface to the second surface. (17) According to the light detection device described in (15) or (16) above, in the plan view, the line width of the intra-pixel isolation portion is narrower than the line width of the inter-pixel isolation portion. (18) According to any one of (1) to (17) above, the first surface of the semiconductor substrate is the (111) surface. (19) A light detection device, comprising: Multiple pixel groups, including a first pixel and a second pixel; An intra-pixel isolation region is disposed between the first pixel and the second pixel; and Inter-pixel isolation regions are disposed between each pixel group in the plurality of pixel groups. Wherein, the first pixel includes: First photoelectric conversion region; A first light-shielding portion, comprising a first edge; and The first opening is disposed between the first edge of the first light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The second pixel includes: Second photoelectric conversion region; The second light-shielding portion includes a second edge; and The second opening is disposed between the second edge of the second light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region, and Wherein, each of the first edge and the second edge is inclined relative to the vertical portion of the intra-pixel isolation region, and the vertical portion of the intra-pixel isolation region passes through the center of each pixel group that divides the first pixel and the second pixel. (20) According to the light detection device described above (19), each of the first light-shielding part and the second light-shielding part includes a material comprising at least one of aluminum (Al), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), chromium (Cr), iridium (Ir), platinum-iridium, titanium nitride (TiN), or a tungsten-silicon compound. (twenty one) The light detection device according to (19) or (20) above further includes a plurality of on-chip lenses, wherein each on-chip lens is configured for each pixel group of the plurality of pixel groups. (twenty two) The light detection device according to (21) above further includes a first charge holding part and a second charge holding part, wherein the first light-shielding part is disposed between the on-film lens and the first charge holding part, and the second light-shielding part is disposed between the on-film lens and the second charge holding part. (twenty three) According to the light detection device described in (19) to (22) above, the first light-shielding part and the second light-shielding part are respectively integrally formed with the pixel isolation region. (twenty four) According to the light detection device described in (19) to (23) above, the first opening and the second opening are approximately symmetrical to each other in a plan view. (25) According to the light detection device described in (19) to (24) above, the first edge and the second edge form an acute angle with respect to a horizontal line perpendicular to the vertical portion of the intra-pixel isolation region passing through the center of each pixel group. (26) According to the optical detection device described in (22) above, wherein, The first pixel also includes: The third light-shielding portion includes a third edge; and The third opening is disposed between the third edge of the third light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The third light-shielding part is disposed between the on-plate lens and the first light-shielding part; and wherein, The second pixel also includes: The fourth light-shielding part includes a fourth edge; and A fourth opening is disposed between the fourth edge of the fourth light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The fourth light-shielding part is disposed between the on-plate lens and the second light-shielding part. (27) According to the light detection device described above (26), each of the third edge and the fourth edge is inclined relative to the vertical portion of the isolation region within the pixel and is inclined relative to the horizontal portion of the isolation region within the image. (28) According to the light detection device described above (26), in the cross-sectional view, a portion of the first light-shielding portion overlaps with a portion of the third light-shielding portion; and in the cross-sectional view, a portion of the second light-shielding portion overlaps with a portion of the fourth light-shielding portion. (29) According to the light detection device described above (26), in the cross-sectional view, the first photoelectric conversion region is disposed between a portion of the first light-shielding portion and a portion of the third light-shielding portion; and in the cross-sectional view, the second photoelectric conversion region is disposed between a portion of the second light-shielding portion and a portion of the fourth light-shielding portion. (30) According to the light detection device described above (26), in a plan view, a portion of the first light-shielding portion overlaps with a portion of the third light-shielding portion; and in the plan view, a portion of the second light-shielding portion overlaps with a portion of the fourth light-shielding portion. (31) According to the light detection device described in (19) to (21) above, it further includes a first space, which is disposed between the first intra-pixel isolation region and the second intra-pixel isolation region of the intra-pixel isolation region, so that the first pixel and the second pixel of the pixel group can be connected to each other. (32) According to the light detection device described in (19) to (24) above, it further includes a second space, which is disposed between the first inter-pixel isolation region and the second inter-pixel isolation region of the inter-pixel isolation region, so that the first pixel group and the second pixel group adjacent to the first pixel group in the plurality of pixel groups can be connected to each other. (33) According to the light detection device described above (26), in the cross-sectional view, the combination of the first light-shielding part and the third light-shielding part completely covers the first charge-holding part; and in the cross-sectional view, the combination of the second light-shielding part and the fourth light-shielding part completely covers the second charge-holding part. (34) According to the light detection device described above (26), in a plan view, the first opening and the third opening are disposed at opposite ends of the first pixel, and the second opening and the fourth opening are disposed at opposite ends of the second pixel. (35) According to the light detection device described above (26), in a plan view, the first opening and the third opening are disposed obliquely opposite each other in the first pixel, and in the plan view, the second opening and the fourth opening are disposed obliquely opposite each other in the second pixel. (36) An electronic device comprising: Optical system; A light detection device that receives light from the optical system, the light detection device comprising: Multiple pixel groups, including a first pixel and a second pixel; An intra-pixel isolation region is disposed between the first pixel and the second pixel; and Inter-pixel isolation regions are disposed between the pixel groups of the plurality of pixel groups. Wherein, the first pixel includes: First photoelectric conversion region; A first light-shielding portion, comprising a first edge; and The first opening is disposed between the first edge of the first light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The second pixel includes: Second photoelectric conversion region; The second light-shielding portion includes a second edge; and The second opening is disposed between the second edge of the second light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region, and Wherein, each of the first edge and the second edge is inclined relative to the vertical portion of the intra-pixel isolation region, the vertical portion of the intra-pixel isolation region passing through the center of each pixel group dividing the first pixel and the second pixel; and A digital signal processor that processes signals received from the optical detection device. (37) According to the electronic device described above (36), each of the first light-shielding part and the second light-shielding part includes a material comprising at least one of aluminum (Al), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), chromium (Cr), iridium (Ir), platinum-iridium, titanium nitride (TiN), or a tungsten-silicon compound. (38) The electronic device described in (36) or (37) above further includes a plurality of on-chip lenses, wherein each on-chip lens among the plurality of under-chip lenses is configured for each pixel group among the plurality of pixel groups.

[0157] Those skilled in the art will understand that, within the scope of the appended claims or their equivalents, various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. [List of reference numerals]

[0158] 10 Semiconductor substrate 10a Front 10b Back 11, 55, 56 Insulating film 12, 15 P-type areas 13, 14 N-type regions 20-pixel isolation section 21 Isolation section within the first pixel 22 Second pixel inner isolation section 23 Overflow Path 30-pixel isolation section 31 First pixel isolation section 32 Second pixel isolation section 51, 51A, 51B, T1 First trench 52. T2 Space Section 53, 53A, 53B, T3 Second Trench 61 First Metallic Film 62 Second Metal Film 101 Camera Device 111 pixel array 112 Vertical Drive Unit 113-column signal processing unit 114 Horizontal Drive Unit 115 System Control Unit 116 pixel drive line 118 Signal Processing Unit 119 Data storage units 600 electronic devices 601 Solid-state camera device 602 Optical Lens 603 Shutter mechanism 604 drive circuit 605 Signal Processing Circuit 606 Incident light 12000 Vehicle Control System 12001 Communication Network 12010 Drive System Control Unit 12020 Body System Control Unit 12030 External Information Detection Unit 12030 Body System Control Unit 12031 Camera Unit 12040 In-vehicle Information Detection Unit 12041 Driver Status Detection Unit 12050 Integrated Control Unit 12051 Microcomputer 12052 Audio / Visual Output Unit 12061 Audio Speaker 12062 Display Unit 12063 Dashboard Vehicle 12100 Camera units 12101, 12102, 12103, 12104, and 12105 Camera range of 12111, 12112, 12113, 12114 AMP amplifier transistor CF color filter CL (Line) EDG1, EDG2 end FD charge-to-voltage conversion unit H, H', H1, H2, H3, H4 openings I. In-vehicle network LS1(R), LS1(L), LS2(R), LS2(L) Horizontal shading sections MEM(R), MEM(L) charge retention section OCL on-chip lens OFG discharge transistor OVL overlap region PD, PD(R), PD(L) photoelectric conversion units PR photoresist PX(R), PX(L) pixels PX, PXA, PXB, PXC, PXD, PXE, PXF, PXG sensor pixels RST reset transistor S20 and S30 spaces SEL selects transistors SW sidewall T1 and T3 trenches T2 Space TG(R)A, TG(L)A, TG(R)B, TG(L)B, TG(R)C, TG(L)C Transfer transistors TRG(R), TRG(L), TRX(R), TRX(L), TRZ(R), TRZ(L) Transfer Gate VDD power supply VG Vertical Gate VSL Vertical Signal Line

Claims

1. A light detection device, comprising: Multiple pixel groups, including a first pixel and a second pixel; An intra-pixel isolation region is disposed between the first pixel and the second pixel; as well as Inter-pixel isolation regions are disposed between each pixel group in the plurality of pixel groups. Wherein, the first pixel includes: First photoelectric conversion region; A first light-shielding portion, comprising a first edge; and The first opening is disposed between the first edge of the first light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The second pixel includes: Second photoelectric conversion region; The second light-shielding portion includes a second edge; and The second opening is disposed between the second edge of the second light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region, and Wherein, each of the first edge and the second edge is inclined relative to the vertical portion of the intra-pixel isolation region, the vertical portion of the intra-pixel isolation region passing through the center of each pixel group dividing the first pixel and the second pixel.

2. The optical detection device according to claim 1, wherein, Each of the first light-shielding part and the second light-shielding part includes a material comprising at least one of aluminum (Al), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), chromium (Cr), iridium (Ir), platinum-iridium, titanium nitride (TiN), or a tungsten-silicon compound.

3. The optical detection device according to claim 1, further comprising a plurality of on-chip lenses, wherein, Each of the plurality of on-chip lenses is configured for each of the plurality of pixel groups.

4. The photodetector according to claim 3, further comprising a first charge holding section and a second charge holding section, wherein, The first light-shielding part is disposed between the on-film lens and the first charge-holding part, and the second light-shielding part is disposed between the on-film lens and the second charge-holding part.

5. The optical detection device according to claim 1, wherein, The first light-shielding part and the second light-shielding part are integrally formed with the inter-pixel isolation area.

6. The optical detection device according to claim 1, wherein, The first opening and the second opening are approximately symmetrical to each other in the plan view.

7. The optical detection device according to claim 1, wherein, The first edge and the second edge form an acute angle with respect to a horizontal line perpendicular to the vertical portion of the intra-pixel isolation region passing through the center of each pixel group.

8. The optical detection device according to claim 4, wherein, The first pixel also includes: The third light-shielding portion includes a third edge; and The third opening is disposed between the third edge of the third light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The third light-shielding part is disposed between the on-plate lens and the first light-shielding part; and wherein, The second pixel also includes: The fourth light-shielding part includes a fourth edge; and A fourth opening is disposed between the fourth edge of the fourth light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The fourth light-shielding part is disposed between the on-plate lens and the second light-shielding part.

9. The optical detection device according to claim 8, wherein, Each of the third edge and the fourth edge is inclined relative to the vertical portion of the intra-pixel isolation region and relative to the horizontal portion of the intra-image isolation region.

10. The optical detection device according to claim 8, wherein, In the cross-sectional view, a portion of the first light-shielding portion overlaps with a portion of the third light-shielding portion; Furthermore, in the cross-sectional view, a portion of the second light-shielding portion overlaps with a portion of the fourth light-shielding portion.

11. The optical detection device according to claim 8, wherein, In the cross-sectional view, the first photoelectric conversion region is disposed between a portion of the first light-shielding portion and a portion of the third light-shielding portion; and wherein, in the cross-sectional view, the second photoelectric conversion region is disposed between a portion of the second light-shielding portion and a portion of the fourth light-shielding portion.

12. The optical detection device according to claim 8, wherein, In the plan view, a portion of the first light-shielding portion overlaps with a portion of the third light-shielding portion; Furthermore, in the plan view, a portion of the second light-shielding portion overlaps with a portion of the fourth light-shielding portion.

13. The light detection device according to claim 1, further comprising a first space, the first space being disposed between a first intra-pixel isolation region and a second intra-pixel isolation region within the intra-pixel isolation region, such that the first pixel and the second pixel of the pixel group can communicate with each other.

14. The light detection device according to claim 1, further comprising a second space, the second space being disposed between the first inter-pixel isolation region and the second inter-pixel isolation region of the inter-pixel isolation region, such that the first pixel group and the second pixel group adjacent to the first pixel group in the plurality of pixel groups can be connected to each other.

15. The optical detection device according to claim 8, wherein, In the cross-sectional view, the combination of the first light-shielding part and the third light-shielding part completely covers the first charge-holding part; and in the cross-sectional view, the combination of the second light-shielding part and the fourth light-shielding part completely covers the second charge-holding part.

16. The optical detection device according to claim 8, wherein, In the plan view, the first opening and the third opening are located at opposite ends of the first pixel, and the second opening and the fourth opening are located at opposite ends of the second pixel.

17. The optical detection device according to claim 8, wherein, In the plan view, the first opening and the third opening are disposed diagonally opposite each other in the first pixel, and in the plan view, the second opening and the fourth opening are disposed diagonally opposite each other in the second pixel.

18. An electronic device comprising: Optical system; A light detection device that receives light from the optical system, the light detection device comprising: Multiple pixel groups, including a first pixel and a second pixel; An intra-pixel isolation region is disposed between the first pixel and the second pixel; and Inter-pixel isolation regions are disposed between the pixel groups of the plurality of pixel groups. Wherein, the first pixel includes: First photoelectric conversion region; A first light-shielding portion, comprising a first edge; and The first opening is disposed between the first edge of the first light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region. The second pixel includes: Second photoelectric conversion region; The second light-shielding portion includes a second edge; and The second opening is disposed between the second edge of the second light-shielding portion and a portion of the intra-pixel isolation region and a portion of the inter-pixel isolation region, and Wherein, each of the first edge and the second edge is inclined relative to the vertical portion of the intra-pixel isolation region, the vertical portion of the intra-pixel isolation region passing through the center of each pixel group dividing the first pixel and the second pixel; and A digital signal processor that processes signals received from the optical detection device.

19. The electronic device according to claim 18, wherein, Each of the first light-shielding part and the second light-shielding part includes a material comprising at least one of aluminum (Al), copper (Cu), cobalt (Co), tungsten (W), titanium (Ti), tantalum (Ta), nickel (Ni), molybdenum (Mo), chromium (Cr), iridium (Ir), platinum-iridium, titanium nitride (TiN), or a tungsten-silicon compound.

20. The electronic device according to claim 18, further comprising a plurality of on-chip lenses, wherein, Each of the multiple under-film lenses is configured for each of the multiple pixel groups.

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