Method, device and equipment for correcting fringe field magnetic field distribution information

Abstract

The present application relates to the technical field of magnetic field information analysis, and particularly relates to a method and device for correcting edge field magnetic field distribution information and equipment; the beam focusing degree, the beam horizontal offset and the extended edge field magnetic field distribution information are obtained by monitoring with a Faraday cup and a Hall probe array; the trajectory analysis is performed on the extended edge field magnetic field distribution information according to the beam focusing degree, the preset focusing degree setting value, the beam horizontal offset and the preset offset setting value, so as to obtain an ideal ion motion trajectory; the Helmholtz coil group and the magnetic shielding box are adjusted according to the extended edge field magnetic field distribution information and the ideal ion motion trajectory, so as to obtain the corrected extended edge field magnetic field distribution information; the ideal ion motion trajectory is derived through trajectory analysis; the hardware is adjusted to optimize the magnetic field; the beam control precision is improved; and the ion implantation accuracy and the semiconductor process stability are ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of magnetic field information analysis, and in particular to a method and device for correcting edge field magnetic field distribution information. BACKGROUND

[0002] Ion implanters are one of the important devices in the semiconductor manufacturing process, which are used to implant ions into semiconductor materials to change their electrical properties. The ion source ionizes the atoms of the desired dopant into ions, which are extracted by the extraction system to form an ion beam. The mass analyzer, as an important part of the ion implanter, is composed of a direct current magnet and a vacuum chamber. By generating a uniform magnetic field with a specific magnetic induction intensity between the two magnetic poles, the target ions required for implantation are screened out from the ions in the ion beam according to the mass-to-charge ratio, so as to ensure the purity of the implanted elements. Outside the uniform magnetic field, the mass analyzer has an extended edge field with a gradually transitioning magnetic induction intensity to 0. Due to the influence of factors such as magnetic pole shape and vacuum chamber, the ideal ion trajectory is difficult to accurately reflect the actual distribution, resulting in the inability to obtain more detailed correlation data between beam focusing degree, horizontal offset and magnetic field distribution. The existing analysis scheme for the distribution information of the extended edge field also lacks ion trajectory analysis and iterative optimization process based on these data, making it difficult to control the beam horizontal offset and focusing degree within the ideal range, ultimately leading to problems such as deterioration of ion beam focusing effect and affecting implantation accuracy in the semiconductor manufacturing process. SUMMARY

[0003] In order to overcome the shortcomings of the prior art, the purpose of the present application is to provide a method, system, device and storage medium for correcting edge field magnetic field distribution information.

[0004] The first aspect of the present application provides a method for correcting edge field magnetic field distribution information, which is applied to a system for correcting edge field magnetic field distribution information. The system for correcting edge field magnetic field distribution information includes a Faraday cup, a Hall probe array, a Helmholtz coil group and a magnetic shielding box. The method for correcting edge field magnetic field distribution information includes: controlling the Faraday cup and the Hall probe array to move according to preset movement distance data; in the moving state, monitoring the beam focusing degree, the beam horizontal offset and the extended edge field magnetic field distribution information by the Faraday cup and the Hall probe array; performing trajectory analysis on the extended edge field magnetic field distribution information according to the beam focusing degree, a preset focusing degree set value, the beam horizontal offset and a preset offset set value, to obtain an ideal ion trajectory; and adjusting the Helmholtz coil group and the magnetic shielding box according to the extended edge field magnetic field distribution information and the ideal ion trajectory, to obtain a corrected extended edge field magnetic field distribution information.

[0005] Further, the monitoring of the beam focusing degree, the beam horizontal offset and the extended edge field magnetic field distribution information by the Faraday cup and the Hall probe array comprises: monitoring the extended edge field magnetic field distribution information by the Faraday cup and the Hall probe array; obtaining the beam size data by the Faraday cup; drawing the beam distribution curve according to the moving distance data and the beam size data; and analyzing the beam distribution curve to obtain the beam focusing degree and the beam horizontal offset.

[0006] Further, the analysis of the beam distribution curve to obtain the beam focusing degree and the beam horizontal offset comprises: obtaining the maximum beam value from the beam size data; obtaining the first abscissa and the second abscissa from the beam distribution curve according to a preset value ratio and the maximum beam value; calculating the difference between the first abscissa and the second abscissa to obtain the coordinate difference value; taking the absolute value of the coordinate difference value to obtain the beam focusing degree; obtaining the beam value abscissa from the beam distribution curve; performing peak value analysis on the preset ideal beam distribution curve to obtain the peak beam abscissa; calculating the difference between the beam value abscissa and the peak beam abscissa to obtain the beam offset value; and taking the absolute value of the beam offset value to obtain the beam horizontal offset.

[0007] Further, the trajectory analysis of the extended edge field magnetic field distribution information according to the beam focusing degree, the preset focusing degree setting value, the beam horizontal offset and the preset offset setting value to obtain the ideal ion motion trajectory comprises: judging whether the beam horizontal offset is greater than or equal to the offset setting value or whether the beam focusing degree is greater than or equal to the focusing degree setting value; and when the beam horizontal offset is greater than or equal to the offset setting value or the beam focusing degree is greater than or equal to the focusing degree setting value, performing the trajectory analysis of the extended edge field magnetic field distribution information according to the beam focusing degree and the beam horizontal offset to obtain the ideal ion motion trajectory.

[0008] Further, the trajectory analysis of the extended edge field magnetic field distribution information according to the beam focusing degree and the beam horizontal offset to obtain the ideal ion motion trajectory comprises: performing the trajectory analysis of the extended edge field magnetic field distribution information based on a preset fourth-order Runge-Kutta method to obtain the ion motion trajectory.

[0009] Further, the trajectory analysis of the extended edge field magnetic field distribution information according to the beam focusing degree and the beam horizontal offset to obtain the ideal ion motion trajectory comprises: performing the trajectory analysis of the extended edge field magnetic field distribution information based on a preset fourth-order Runge-Kutta method to obtain the ion motion trajectory.

[0010] Further, the trajectory analysis on the extended edge field magnetic field distribution information based on the preset fourth-order Runge-Kutta method is used to obtain the ion motion trajectory, comprising: acquiring the ion mass, ion charge and ion energy sequence; performing fitting analysis on the extended edge field magnetic field distribution information based on an interpolation algorithm to obtain an extended edge field magnetic field distribution function; performing trajectory analysis on the extended edge field magnetic field distribution function, ion mass, ion charge and ion energy based on the fourth-order Runge-Kutta method to obtain the ion motion trajectory.

[0011] Further, the adjustment of the Helmholtz coil set and the magnetic shielding box according to the extended edge field magnetic field distribution information and the ideal ion motion trajectory is used to obtain the corrected extended edge field magnetic field distribution information, comprising: deviation analysis on the extended edge field magnetic field distribution information and the ideal ion motion trajectory to obtain a magnetic field size compensation value and a magnetic field width compensation value; adjustment of the Helmholtz coil set according to the magnetic field size compensation value; adjustment of the magnetic shielding box according to the magnetic field width compensation value; and after the adjustment of the Helmholtz coil set and the magnetic shielding box is completed, the corrected extended edge field magnetic field distribution information is obtained through the Hall probe array monitoring.

[0012] Further, the deviation analysis on the extended edge field magnetic field distribution information and the ideal ion motion trajectory is used to obtain the magnetic field size compensation value and the magnetic field width compensation value, comprising: second-order derivation of the ideal ion motion trajectory according to the ion mass, ion charge and ion energy to obtain an ideal extended edge field magnetic field distribution function; deviation analysis on the extended edge field magnetic field distribution function and the ideal extended edge field magnetic field distribution function to obtain the magnetic field size compensation value and the magnetic field width compensation value.

[0013] Further, the correction device of the edge field magnetic field distribution information, comprising: a control module for controlling the Faraday cup and the Hall probe array to move according to preset movement distance data; a monitoring module for monitoring the beam focusing degree, the beam horizontal offset and the extended edge field magnetic field distribution information through the Faraday cup and the Hall probe array in the moving state; a trajectory analysis module for performing trajectory analysis on the extended edge field magnetic field distribution information according to the beam focusing degree, a preset focusing degree set value, the beam horizontal offset and a preset offset set value to obtain an ideal ion motion trajectory; and an adjustment module for adjusting the Helmholtz coil set and the magnetic shielding box according to the extended edge field magnetic field distribution information and the ideal ion motion trajectory to obtain the corrected extended edge field magnetic field distribution information.

[0014] Further, the edge field magnetic field distribution information correction device comprises a memory and at least one processor, and the memory stores instructions; the at least one processor invokes the instructions in the memory to enable the computer device to perform the steps of the edge field magnetic field distribution information correction method.

[0015] In the technical solution of the present application, the Faraday cup and the Hall probe array are moved by a preset distance control method, and the beam focusing degree, horizontal offset and extended edge field magnetic field distribution information are monitored synchronously, which not only covers more space points to ensure data continuity, but also establishes a direct correlation between the magnetic field and the beam parameters, providing accurate and reliable data basis for subsequent analysis. By determining whether the beam offset and focusing degree are out of standard, the beam abnormality can be identified in time, avoiding the situation that a single parameter meets the standard but the process is defective. The beam parameters are integrated to carry out trajectory analysis on the magnetic field distribution, the ideal ion motion trajectory can be accurately deduced, the optimization direction of beam regulation is clear, and finally the Helmholtz coil group and the magnetic shielding box are adjusted according to the actual magnetic field and the ideal trajectory to obtain the corrected magnetic field distribution, so as to optimize the beam state. This effectively improves the beam control precision, provides strong support for the position accuracy of ion implantation, and helps to improve the stability of the semiconductor manufacturing process and ensure product quality. BRIEF DESCRIPTION OF DRAWINGS

[0016] The above and / or additional aspects and advantages of the present application will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:

[0017] Figure 1 The first flowchart of the edge field magnetic field distribution information correction method provided by the embodiment of the present application;

[0018] Figure 2 The second flowchart of the edge field magnetic field distribution information correction method provided by the embodiment of the present application;

[0019] Figure 3 The third flowchart of the edge field magnetic field distribution information correction method provided by the embodiment of the present application;

[0020] Figure 4 The fourth flowchart of the edge field magnetic field distribution information correction method provided by the embodiment of the present application;

[0021] Figure 5 The fifth flowchart of the edge field magnetic field distribution information correction method provided by the embodiment of the present application;

[0022] Figure 6 The sixth flowchart of the edge field magnetic field distribution information correction method provided by the embodiment of the present application;

[0023] Figure 7 The seventh flow chart of the correction method of the edge field magnetic field distribution information provided by the embodiment of the application;

[0024] Figure 8 The eighth flow chart of the correction method of the edge field magnetic field distribution information provided by the embodiment of the application;

[0025] Figure 9 The structure schematic diagram of the correction device of the edge field magnetic field distribution information provided by the embodiment of the application;

[0026] Figure 10 The structure schematic diagram of the correction device of the edge field magnetic field distribution information provided by the embodiment of the application;

[0027] Figure 11 The extended edge field distribution curve is extended;

[0028] Figure 12 The schematic diagram of the motion trajectory of the ion incident in the extended edge field horizontal plane is extended. DETAILED DESCRIPTION

[0029] The terms "first", "second", "third", "fourth" and the like in the description, claims, and drawings of the application (if any) are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the use of these terms herein is to be construed to cover the recurrence of a process, procedure, composition, and / or device, regardless of the number of repetitions. Furthermore, the terms "comprise" (and any grammatical variations thereof, such as "comprising" and "comprises") are intended to cover a non-exclusive inclusion, such that a process, procedure, composition, or device that comprises more steps, procedures, compositions, features, elements, or components than those listed need not comprise all of them.

[0030] The correction method of the edge field magnetic field distribution information is applied to the correction system of the edge field magnetic field distribution information, the correction system of the edge field magnetic field distribution information comprises a Faraday cup and a Hall probe array, in order to facilitate understanding, the specific flow of the embodiment of the application is described below, please refer to Figure 1 One embodiment of the correction method of the edge field magnetic field distribution information in the embodiment of the application comprises:

[0031] 101. Controlling the Faraday cup and the Hall probe array to move according to the preset moving distance data;

[0032] 102. In the moving state, the beam focusing degree, the beam horizontal offset and the extended edge field magnetic field distribution information are monitored by the Faraday cup and the Hall probe array;

[0033] In the embodiment, the Faraday cup and the Hall probe array are controlled to move according to the preset moving distance control method, and the beam focusing degree, the horizontal offset and the extended fringe field magnetic field distribution information are synchronously monitored in the moving state. This can cover more space points, ensure continuous data collection, establish a direct correlation between the magnetic field and the beam parameters, provide a precise and reliable basis for subsequent trajectory analysis and iterative optimization, and help improve the beam control precision.

[0034] 103. Trajectory analysis is performed on the extended fringe field magnetic field distribution information according to the beam focusing degree, the preset focusing degree set value, the beam horizontal offset and the preset offset set value, to obtain an ideal ion motion trajectory.

[0035] In the embodiment, the beam focusing degree and the horizontal offset are integrated to perform trajectory analysis on the extended fringe field magnetic field distribution information. This analysis can accurately deduce the ideal ion motion trajectory, provide a clear direction for subsequent optimization, help accurately control the beam state, and lay a solid foundation for improving ion implantation precision.

[0036] 104. The Helmholtz coil set and the magnetic shielding box are adjusted according to the extended fringe field magnetic field distribution information and the ideal ion motion trajectory, to obtain corrected extended fringe field magnetic field distribution information.

[0037] In another embodiment, if the beam horizontal offset is still greater than or equal to the offset set value or the beam focusing degree is still greater than or equal to the focusing degree set value after adjusting the Helmholtz coil set and the magnetic shielding box, the Faraday cup and the Hall probe array are controlled to move according to the moving distance data, until the beam horizontal offset is less than the offset set value or the beam focusing degree is less than the focusing degree set value. When the beam horizontal offset is less than the offset set value and the beam focusing degree is less than the focusing degree set value, the optimized ion beam focusing effect is achieved, and the current Faraday cup position state and a series of system operation parameters are maintained for system operation, finally stabilizing the high-quality beam state, effectively solving the problem of ion beam focusing effect degradation, and providing a solid support for improving ion implantation precision and ensuring the stability of semiconductor manufacturing process and product quality.

[0038] In the embodiment, the Faraday cup and the Hall probe array are controlled to move by a preset distance, and the focusing degree, the horizontal offset and the extended edge field magnetic field distribution information are monitored synchronously, which not only covers more space points to ensure data continuity, but also establishes a direct correlation between the magnetic field and the beam parameters, thereby providing accurate and reliable data basis for subsequent analysis. By determining whether the beam offset and the focusing degree are over-standard, the beam abnormality can be identified in time, and the situation that a single parameter meets the standard but the process is defective is avoided. The beam parameters are integrated to carry out trajectory analysis on the magnetic field distribution, the ideal ion motion trajectory can be accurately deduced, the optimization direction of beam regulation is clear, and finally the Helmholtz coil group and the magnetic shielding box are adjusted according to the actual magnetic field and the ideal trajectory to obtain a corrected magnetic field distribution, so that the beam state is optimized. This effectively improves the beam control precision, supports the position accuracy of ion implantation, and helps to improve the stability of the semiconductor manufacturing process and ensure product quality.

[0039] Referring to Figure 2 In the second embodiment of the edge field magnetic field distribution information correction method in the embodiment of the present application, step 102 specifically comprises:

[0040] 201. The extended edge field magnetic field distribution information is monitored by the Faraday cup and the Hall probe array.

[0041] In the embodiment, the Hall probe array is responsible for capturing magnetic field distribution data, and the Faraday cup is used to obtain beam-related signals, so as to realize synchronous acquisition of magnetic field and beam data. The monitoring in the moving state can cover more space points, and the continuity of the magnetic field and the beam data is ensured.

[0042] 202. The beam size data is obtained by the Faraday cup.

[0043] In the embodiment, the beam size data is obtained by the Faraday cup, and the principle is based on capturing the current generated by charged particles to measure the beam size, thereby providing a basis for subsequent curve drawing.

[0044] 203. The beam distribution curve is drawn according to the moving distance data and the beam size data.

[0045] In the embodiment, the beam distribution curve intuitively presents the distribution rule of the beam in space (such as the peak position and the concentration range), thereby providing a visual and calculable carrier for subsequent analysis of the focusing degree and the horizontal offset.

[0046] 204. The beam distribution curve is analyzed to obtain the focusing degree and the horizontal offset of the beam.

[0047] In the embodiment, the peak position of the beam current distribution curve corresponds to the beam current center, the half-height point corresponds to the focusing range, the concentration degree and position deviation of the beam current are quantified by the curve characteristics, and accurate and quantitative beam current core parameters are output, thereby providing direct input for subsequent deviation analysis and magnetic field adjustment;

[0048] In the embodiment, relying on the working mode of the Faraday cup and the Hall probe array, more space points are covered in the moving state, magnetic field and beam current data are synchronously collected to ensure the continuity of the data, the beam current distribution curve is drawn combined with the moving distance and the beam current size data, the spatial distribution law such as the peak position of the beam current and the concentration range is intuitively presented, the beam current focusing degree and the horizontal deviation are further quantified based on the curve characteristics, and accurate core parameters are output, thereby directly providing input for subsequent deviation analysis and magnetic field adjustment, and building a data support for the whole process of extending the edge field magnetic field correction, and assisting in improving the accuracy and stability of the ion implantation process.

[0049] Please refer to Figure 3 , the third embodiment of the edge field magnetic field distribution information correction method in the embodiment of the application, step 204 specifically comprises:

[0050] 301, obtaining a beam current maximum value from the beam current size data;

[0051] 302, obtaining a first abscissa and a second abscissa from the beam current distribution curve according to a preset value ratio and the beam current maximum value;

[0052] In the embodiment, the value ratio is one-half, and the abscissas of the two points where one-half of the beam current maximum value is located in the beam current distribution curve are taken as (the first abscissa) and (the second abscissa), that is, the half-height points of the beam current distribution curve, and the half-height point is a classic index for measuring the focusing effect of the beam current;

[0053] 303, performing difference calculation on the first abscissa according to the second abscissa to obtain a coordinate difference value;

[0054] 304, performing absolute value taking on the coordinate difference value to obtain a beam current focusing degree;

[0055] In the embodiment, the beam current focusing degree The smaller the value of the beam current focusing degree is, the more concentrated the beam current is, and the beam current concentration degree can be clearly reflected, thereby providing reliable data support for subsequent deviation analysis and magnetic field adjustment, assisting in accurately controlling the beam current state, and laying a key foundation for optimizing the focusing effect of the ion implantation process and improving the overall stability.

[0056] 305, obtaining a beam current value abscissa from the beam current distribution curve according to the beam current maximum value;

[0057] 306, peak analysis is performed on the preset ideal beam current distribution curve to obtain a peak beam current abscissa;

[0058] 307, difference calculation is performed on the peak beam current abscissa according to the beam current value abscissa to obtain a beam current offset value;

[0059] 308, absolute value is taken on the beam current offset value to obtain a beam current horizontal offset;

[0060] In the embodiment, the highest point (peak beam current) of the ideal beam current distribution curve should be located at the midpoint 180 mm, and symmetrical about the axis X=180 (the peak beam current abscissa, in the ideal state, the highest point of the beam current distribution curve is completely located at 180 mm, and in very harsh conditions, the ideal state can be achieved, therefore, the set value of the offset ΔXset is often not 0, and in the embodiment, it is considered that the ideal state is achieved, and therefore the peak beam current abscissa is X=180), and the absolute value of the difference between the abscissa Xmax of the maximum beam current (the beam current value abscissa) and X=180 (the peak beam current abscissa) is used to measure the beam current horizontal offset ΔX, which provides a reliable basis for subsequent deviation analysis and magnetic field component adjustment;

[0061] In the embodiment, the maximum beam current is extracted first, and then the half-height point of the beam current distribution curve is locked according to the 1 / 2 value proportion, and the beam focusing degree is obtained by difference calculation and taking the absolute value. The index is a classic standard for measuring focusing effect, and the smaller the value is, the more concentrated the beam current is, and the beam current concentration degree can be clearly reflected. Meanwhile, the ideal peak value is used as a reference, the beam current horizontal offset is quantified accurately by extracting the beam current value abscissa, performing peak analysis, and taking the absolute value by difference calculation, and the deviation between the actual position and the ideal position is directly reflected, which provides reliable data for subsequent deviation analysis and magnetic field component adjustment, helps to accurately control the beam current state, effectively guarantees the focusing effect and position accuracy of ion implantation, and builds a key data foundation for process stability optimization.

[0062] Please refer to Figure 4 , the correction system of the edge field magnetic field distribution information further comprises a Helmholtz coil group and a magnetic shielding box, and the fourth embodiment of the edge field magnetic field distribution information correction method in the embodiment of the present application, step 103 specifically comprises:

[0063] 401, it is judged whether the beam current horizontal offset is greater than or equal to the offset set value or the beam current focusing degree is greater than or equal to the focusing degree set value;

[0064] In the embodiment, the logic trigger deviation analysis is adopted, that is, as long as any one of the conditions of "beam level offset amount >= offset amount set value" and "beam focusing degree >= focusing degree set value" is met, the subsequent deviation analysis process is started, the process defects caused by the single parameter reaching the standard but the other parameter exceeding the standard are avoided, the key deviations affecting the ion implantation effect are ensured to be identified in time, and potential problems are not missed;

[0065] 402、when the beam level offset amount is greater than or equal to the offset amount set value or the beam focusing degree is greater than or equal to the focusing degree set value, trajectory analysis is performed on the extended edge field magnetic field distribution information according to the beam focusing degree and the beam level offset amount to obtain an ideal ion motion trajectory;

[0066] In the embodiment, the trigger conditions of whether the beam level offset amount and the beam focusing degree exceed the standard are used to identify the beam state abnormity in time, avoid potential defects of the process not reaching the standard although the single parameter reaches the standard, and perform trajectory analysis by integrating the exceeding beam parameters and the extended edge field magnetic field distribution information, so that the ideal ion motion trajectory meeting the process requirements can be accurately deduced, clear optimization direction is provided for directional adjustment of the subsequent Helmholtz coil group and magnetic shielding box, the pertinence and accuracy of beam control are improved, and a key foundation for stability and doping accuracy of the ion implantation process is built.

[0067] In the embodiment, the "or logic" is used to determine whether the beam level offset amount and the beam focusing degree exceed the standard, as long as any one parameter reaches the set threshold value, the subsequent deviation analysis process is immediately started, process defects caused by the single parameter reaching the standard but the other parameter exceeding the standard are effectively avoided, key deviations affecting the ion implantation effect are ensured to be identified comprehensively, potential problems are prevented from being missed, the trigger condition of parameter exceeding the standard is used to integrate the beam focusing degree, the level offset amount and the extended edge field magnetic field distribution information to perform trajectory analysis, the ideal ion motion trajectory meeting the process requirements can be accurately deduced, clear and explicit optimization direction is provided for directional adjustment of the subsequent Helmholtz coil group and magnetic shielding box, the pertinence and accuracy of beam control are improved, the ion beam state is stably controllable, and a key technical support for stability, doping position accuracy and product quality of semiconductor manufacturing of the ion implantation process is built.

[0068] Please refer to Figure 5 In the fifth embodiment of the correction method of the edge field magnetic field distribution information in the embodiment, step 402 specifically includes:

[0069] 501, trajectory analysis is performed on the extended edge field magnetic field distribution information based on the preset fourth-order Runge-Kutta method to obtain an ion motion trajectory;

[0070] In the embodiment, the trajectory analysis is performed on the extended edge field magnetic field distribution information based on the fourth-order Runge-Kutta method. The method has high numerical calculation accuracy and can accurately solve the differential equation of ion movement in the magnetic field. The ion movement trajectory that conforms to the actual working condition can be efficiently derived, which provides a reliable basis for subsequent ideal trajectory fitting and magnetic field parameter adjustment, and helps to improve the accuracy of ion implantation process.

[0071] 502. Deviation analysis is performed on the beam horizontal deviation based on the deviation value of the deviation value, to obtain a first deviation value;

[0072] 503. Deviation analysis is performed on the beam focusing degree based on the focusing degree setting value, to obtain a second deviation value;

[0073] In the embodiment, the deviation analysis is performed on the actual monitoring parameters based on the deviation value and the focusing degree setting value, and the first deviation value and the second deviation value are generated. The parameter difference is converted into quantitative data, which provides accurate targeting for subsequent adjustment and provides a reliable basis for ion beam optimization, improves the position accuracy of ion implantation and the uniformity of doping, and provides solid support for stable and efficient operation of the process.

[0074] 504. The ideal ion movement trajectory is fitted based on the preset interpolation algorithm, the first deviation value, the second deviation value, and the preset variable coefficient;

[0075] In the embodiment, the interpolation algorithm can complete the discrete magnetic field and trajectory data, improve the continuity and smoothness of the trajectory fitting, and ensure that the fitting direction accurately targets the beam parameter optimization requirements. By adjusting the variable coefficient, the exit point position of the ion trajectory can be flexibly corrected, and the problem that the actual trajectory cannot pass through the ideal exit point is solved. The ideal ion movement trajectory output is the optimal trajectory model that takes into account the actual distribution of the magnetic field and the requirements of the beam process;

[0076] In the embodiment, the ion movement trajectory is calculated based on the fourth-order Runge-Kutta method, which has high-precision numerical solution capability and can accurately restore the actual movement path of the ion in the extended edge field (ion movement trajectory), providing a reliable basis for subsequent optimization. By quantifying the deviation of the beam horizontal deviation and the beam focusing degree from the setting value, the beam defects are converted into correction parameters, avoiding the blindness of trajectory fitting. Combined with the deviation value, the ideal ion movement trajectory is fitted based on the variable coefficient, which provides a clear direction for subsequent magnetic field component adjustment, improves the accuracy of beam control, and helps to improve the position accuracy and doping uniformity of ion implantation, providing solid technical support for stable operation of semiconductor manufacturing process.

[0077] Please refer to Figure 6In the sixth embodiment of the correction method of the edge field magnetic field distribution information in the embodiment of the application, step 501 specifically comprises the following steps.

[0078] 601, acquire ion mass, ion charge and ion energy sequence;

[0079] 602, perform fitting analysis on the extended edge field magnetic field distribution information based on an interpolation algorithm to obtain an extended edge field magnetic field distribution function;

[0080] In this embodiment, the fitting analysis on the extended edge field discrete magnetic field distribution information based on the interpolation algorithm is performed to obtain the extended edge field magnetic field distribution function The principle of the fitting analysis by the interpolation algorithm is that the discrete magnetic field distribution data collected by the Hall probe array is interpolated and complemented into a continuous function curve (i.e., the extended edge field magnetic field distribution function ) by using a polynomial fitting method; the actual magnetic field distribution "extended edge field magnetic field distribution information" collected by the Hall probe array is discrete, and the extended edge field magnetic field distribution function of the actual magnetic field distribution needs to be obtained by the interpolation algorithm to provide continuous and calculable basic data support for subsequent magnetic field correction and ion motion trajectory analysis;

[0081] 603, perform trajectory analysis on the extended edge field magnetic field distribution function, ion mass, ion charge and ion energy based on a fourth-order Runge-Kutta method to obtain an ion motion trajectory;

[0082] In this embodiment, first, the ion acceleration , is calculated for the ion mass, is calculated for the ion charge, and then each step of and is calculated by using the following fourth-order Runge-Kutta formula by iterative circulation , and finally, all calculated ion trajectory points are output and saved, and the ion motion trajectory is drawn according to the ion trajectory points;

[0083] The expression of the fourth-order Runge-Kutta formula is as follows:

[0084]

[0085]

[0086] In the formula, the initial conditions are given ( is time), , and the extended edge field magnetic field distribution function , the setting parameters include time step h, total step number N or termination condition (such as ion flying out of the magnetic field region, ion reaching the boundary of the magnetic field with a strength of 0, i.e. flying out of the magnetic field region, at this time the ion is no longer subjected to the Lorentz force, the ion moves along a straight line, at this time the iteration is terminated, and the motion trajectory of the ion in the magnetic field is completely determined), for each step n = 0, 1, 2,... , the ion energy expression is , E is the ion energy, according to the ion energy expression, the ion energy sequence and the ion mass can be calculated to obtain the ion velocity sequence ;

[0087] , , , ,

[0088] , ,

[0089] , and is the slope at the beginning of the time period, and is the first slope at the midpoint of the time period, and is the second slope at the midpoint of the time period, and is the slope at the end of the time period;

[0090] In this embodiment, by obtaining the ion mass, ion charge and ion energy sequence, core parameter support is provided for ion motion trajectory calculation; the discrete extended edge field magnetic field distribution information is fitted into a continuous function by using an interpolation algorithm, solving the problem that discrete data is difficult to accurately calculate the trajectory, and improving the calculability and integrity of the magnetic field distribution; based on the fourth-order Runge-Kutta method, the ion motion differential equation is solved with high precision by combining the magnetic field distribution function and the ion core parameters, and the ion motion trajectory that fits the actual working condition is accurately derived, providing a reliable benchmark for subsequent ideal trajectory fitting and magnetic field parameter directional adjustment, improving the trajectory analysis precision and control pertinence of the ion implantation process, and helping to ensure the stability of the semiconductor manufacturing process.

[0091] Figure 11 is an extended edge field magnetic field distribution curve, wherein the abscissa S is the distance from the magnetic induction measurement point to the magnetic pole boundary; the ordinate Bz(S) is the vertical component of the magnetic induction at the measurement point on the midplane; the solid line is the extended edge field magnetic field distribution curve without magnetic shielding; the dashed line is the extended edge field magnetic field distribution curve with magnetic shielding, and the Figure 11It is shown that the magnetic field of the mass analyzer is uniform within one pole distance from the boundary, and in the region of S>-1, Bz gradually decreases with the increase of S. After installing the magnetic shielding box, the extended edge field can be limited within a limited range. By changing the distance between the magnetic shielding box and the pole boundary, the width of the extended edge field (extended edge field width) can be changed. The closer the magnetic shielding box is to the mass analyzer, the narrower the extended edge field width. That is, the position of the magnetic shielding box can be adjusted to adjust the width of the extended edge field.

[0092] Please refer to Figure 7 In the seventh embodiment of the edge field magnetic field distribution information correction method in the embodiment of the present application, step 403 specifically comprises:

[0093] 701. Deviation analysis is performed on the extended edge field magnetic field distribution information and the ideal ion trajectory to obtain a magnetic field size compensation value and a magnetic field width compensation value;

[0094] In this embodiment, the magnetic field size compensation value (the difference between the actual magnetic field strength and the ideal magnetic field strength) and the magnetic field width compensation value (the difference in the spatial range between the actual magnetic field strength and the ideal magnetic field strength) are quantified by deviation analysis on the ideal magnetic field corresponding to the actual extended edge field magnetic field and the ideal ion trajectory. The Helmholtz coil and the magnetic shielding box are adjusted in a targeted manner, combined with the closed-loop monitoring of the Hall probe, to accurately match the beam requirements, effectively optimize the beam focusing and deviation, and help improve the position accuracy and process stability of semiconductor ion implantation.

[0095] 702. Adjust the Helmholtz coil group according to the magnetic field size compensation value;

[0096] In this embodiment, the Helmholtz coil group is precisely controlled by outputting the magnetic field size compensation value. By compensating the magnetic field strength and adjusting the vertical component of the magnetic field, the ion beam can be effectively collected and the divergence trend can be suppressed, allowing the ion beam to maintain a more concentrated and regular shape. Deviation is corrected from the dimension of magnetic field strength, providing a basis for improving doping uniformity (ensuring that the ions implanted into the material are uniformly distributed in the vertical direction (such as the thickness and width dimensions of the material), without local over-dense or over-dense conditions).

[0097] 703. Adjust the magnetic shielding box according to the magnetic field width compensation value;

[0098] In this embodiment, the magnetic shielding box is adjusted according to the quantified magnetic field width compensation value to accurately adapt to the spatial range of the ideal magnetic field, effectively correct the trajectory deviation of the ions in the extended edge field, optimize the horizontal position accuracy of the beam, and stabilize the distribution of the extended edge field. It provides a solid support for the position accuracy and process operation stability of semiconductor ion implantation. Based on the double deviation value, the Helmholtz coil group and the magnetic shielding box are adjusted in a targeted manner to achieve precise correction of the magnetic field.

[0099] 704、When the adjustment of the Helmholtz coil set and the magnetic shielding box is completed, the modified extended edge field magnetic field distribution information is obtained through the Hall probe array monitoring;

[0100] In this embodiment, when the adjustment of the Helmholtz coil set and the magnetic shielding box is completed, the dynamic corrected extended edge field magnetic field can make the ion motion trajectory in the extended edge region consistent with the expectation, significantly reduce the horizontal offset of the incident point and the exit point, improve the accuracy of the doping position, and then obtain the modified extended edge field magnetic field distribution information through the Hall probe array monitoring;

[0101] In this embodiment, adjusting the Helmholtz coil set according to the magnetic field size compensation value can effectively converge the ion beam and suppress its vertical plane divergence, so that the ion beam remains in a concentrated and regular shape, and corrects the deviation from the magnetic field intensity dimension, laying a key foundation for realizing the doping uniformity of the ions in the vertical direction of the material; at the same time, adjusting the magnetic shielding box according to the magnetic field width compensation value adjusts the relative distance between it and the mass analyzer to optimize the extended edge magnetic field width, accurately corrects the ion motion trajectory, corrects the extended edge field distribution state, and improves the accuracy and stability of beam flow control, ultimately guarantees the doping uniformity and trajectory accuracy of the ion implantation process, and provides reliable support for efficient and stable operation of the process.

[0102] Figure 12 is a schematic diagram of the ion motion trajectory in the horizontal plane of the extended edge field, Oy axis is the mechanical boundary of the magnet, Ox axis is the inward normal line of the mechanical boundary of the magnet, the dashed line parallel to y axis at x=B is the magnetic field boundary of the extended edge field and the uniform magnetic field, the ion starts from the extended edge field boundary P point of x axis, the initial velocity is vertically incident to the magnetic field along x direction, after the ion enters the extended edge field magnetic field, it is affected by the Lorentz force, the motion direction is deflected, and as it goes deeper into the magnetic field, the Lorentz force becomes larger and larger, until it reaches the B point magnetic field boundary and enters the uniform magnetic field, and then it makes circular motion along the circular arc BC with R as the radius, in order to improve the ideal calculation accuracy and more clearly explain the influence of the extended edge field, the extended edge field is equivalent to the abrupt edge field, that is, the deflection effect of the extended edge field on the ion in the horizontal plane is equivalent to the case of the abrupt edge field, it is assumed that the magnetic field boundary of the abrupt edge field is located at x=- , the magnetic induction intensity B= on the right of the magnetic field boundary, and the magnetic induction intensity B=0 on the left; it is assumed that the ion also moves along the circular arc BC, then in the equivalent abrupt edge field, the ion must be vertically incident at P', and after passing through the equivalent boundary A point, it is affected by the Lorentz force and makes circular motion along the circular arc ABC with R as the radius, which shows that when the ion motion trajectories of the extended edge field and the abrupt edge field coincide, the ion must horizontally translate a certain distance △y, and at the same time, the magnetic field boundary is changed to the equivalent boundary, and the distance from the mechanical boundary is .

[0103] Referring to Figure 8 In the eighth embodiment of the correction method of the edge field magnetic field distribution information in the embodiments of the present application, step 701 specifically comprises:

[0104] 801, the ideal extended edge field magnetic field distribution function is obtained by second-order derivation of the ideal ion trajectory according to ion mass, ion charge and ion energy;

[0105] In this embodiment, the ideal extended edge field magnetic field distribution function is obtained by second-order derivation of the ideal ion trajectory The core formula is as follows:

[0106] , The second-order derivative of the ideal trajectory is the acceleration of the ion (Newton's second law F=ma), The Lorentz force suffered by the ion in the magnetic field is because the "ideal ion trajectory " is known, and the second-order derivative of it can obtain the acceleration; combined with the ion mass, ion charge and ion energy, the formula can be solved inversely to obtain the magnetic field distribution (namely, the ideal extended edge field magnetic field distribution function) required to maintain the ideal trajectory;

[0107] 802, deviation analysis is performed on the extended edge field magnetic field distribution function and the ideal extended edge field magnetic field distribution function to obtain the magnetic field size compensation value and the magnetic field width compensation value;

[0108] In this embodiment, by performing deviation analysis on the actual extended edge field magnetic field distribution function and the ideal function, the magnetic field size compensation value and the magnetic field width compensation value are accurately quantified, the difference between the ideal demand of the magnetic field and the actual state is converted into directly applicable adjustment parameters, and precise basis is provided for directional adjustment of the Helmholtz coil group and the magnetic shielding box, the pertinence and efficiency of the magnetic field correction are improved, the ion trajectory is optimized, and the accuracy and stability of the ion implantation process are ensured;

[0109] In the embodiment, the ideal extended fringe field magnetic field distribution function is inversely deduced by second-order derivation of the ideal ion motion trajectory, combined with ion mass, ion charge and ion energy core parameters, based on Newton's second law and Lorentz force formula, to establish the precise ideal correlation between the ion ideal motion trajectory and the magnetic field distribution. By comparing the actual extended fringe field magnetic field distribution function with the ideal extended fringe field magnetic field distribution function, deviation analysis is carried out to accurately quantify the magnetic field size compensation value and the magnetic field width compensation value, and the difference between the ideal requirement and the actual state of the magnetic field is converted into a directly applicable hardware adjustment parameter, improving the pertinence and accuracy of the adjustment of the Helmholtz coil group and the magnetic shielding box. This can effectively guide the magnetic field correction operation, help the ion motion trajectory to fit the ideal path, optimize the beam focusing degree and horizontal offset, and ensure the position accuracy and uniformity of ion implantation, and lay a solid foundation for the stable operation of semiconductor manufacturing process and the improvement of product quality.

[0110] The correction method of the fringe field magnetic field distribution information in the embodiment of the application is described above, and the correction device of the fringe field magnetic field distribution information in the embodiment of the application is described below. Please refer to Figure 9 The correction device of the fringe field magnetic field distribution information in the embodiment of the application includes one embodiment:

[0111] The control module 1 is used to control the Faraday cup and the Hall probe array to move according to the preset moving distance data.

[0112] The monitoring module 2 is used to monitor the beam focusing degree, the beam horizontal offset and the extended fringe field magnetic field distribution information by the Faraday cup and the Hall probe array in the moving state.

[0113] The trajectory analysis module 3 is used to analyze the trajectory of the extended fringe field magnetic field distribution information according to the beam focusing degree, the preset focusing degree set value, the beam horizontal offset and the preset offset set value, to obtain the ideal ion motion trajectory.

[0114] The adjustment module 4 is used to adjust the Helmholtz coil group and the magnetic shielding box according to the extended fringe field magnetic field distribution information and the ideal ion motion trajectory, to obtain the corrected extended fringe field magnetic field distribution information.

[0115] In the embodiment, by controlling the Faraday cup and the Hall probe array to move by a preset distance, the beam focusing degree, the horizontal offset and the extended edge field magnetic field distribution information are synchronously monitored, more space points are covered to ensure data continuity, the direct correlation between the magnetic field and the beam parameters is established, accurate and reliable data basis is provided for subsequent analysis, whether the beam offset and the focusing degree are over-standard is determined, the beam abnormality can be identified in time, the case that a single parameter is up to standard but the process defect occurs is avoided, the beam parameters are integrated to carry out trajectory analysis on the magnetic field distribution, the ideal ion motion trajectory can be accurately deduced, the optimization direction is clear for the beam regulation and control, and finally the magnetic field distribution is obtained by adjusting the Helmholtz coil group and the magnetic shielding box according to the actual magnetic field and the ideal trajectory, the optimization of the beam state is realized, the beam control precision is effectively improved, the position accuracy of ion implantation is supported, and the stability of the semiconductor manufacturing process is improved, and the product quality is ensured.

[0116] Figure 10 FIG. 9 is a structural schematic diagram of the edge field magnetic field distribution information correction device provided by the embodiment of the present application. The edge field magnetic field distribution information correction device 900 can have great differences due to different configurations or performances, and can include one or more central processing units (CPUs) 910 (for example, one or more processors) and a memory 920, and one or more storage media 930 (for example, one or more mass storage devices) storing application programs 933 or data 932. The memory 920 and the storage media 930 can be temporary storage or persistent storage. The programs stored in the storage media 930 can include one or more modules (not shown in the figure), and each module can include a series of instruction operations in the edge field magnetic field distribution information correction device 900. Further, the processor 910 can be configured to communicate with the storage media 930 and execute a series of instruction operations in the storage media 930 on the edge field magnetic field distribution information correction device 900, so as to implement the steps of the edge field magnetic field distribution information correction method provided by the above-mentioned method embodiments.

[0117] The edge field magnetic field distribution information correction device 900 can further include one or more power supplies 940, one or more wired or wireless network interfaces 950, one or more input and output interfaces 960, and / or one or more operating systems 931, such as Windows Server, MacOS X, Unix, Linux, FreeBSD, and the like. Those skilled in the art can understand that the edge field magnetic field distribution information correction device 900 can further include other components that are not shown in the figure, such as a bus system, a power supply system, and the like. Figure 10 The structure of the edge field magnetic field distribution information correction device shown in the figure does not constitute a limitation on the edge field magnetic field distribution information correction device, and can include more or fewer components than shown in the figure, or combine certain components, or different component arrangements.

[0118] The application further provides a computer readable storage medium, which can be a nonvolatile computer readable storage medium or a volatile computer readable storage medium, and the computer readable storage medium stores instructions, and the instructions make a computer execute steps of the correction method of the magnetic field distribution information of the edge field when the instructions run on the computer.

[0119] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the above-described system or device, unit can refer to the corresponding processes in the foregoing method embodiments, and will not be described herein.

[0120] Finally, it should be noted that: the above only for the preferred examples of the application, and not for limiting the application, although the application is described in detail with reference to the foregoing embodiments, for those skilled in the art, it still can modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the application shall be included in the protection scope of the application.

Claims

1. A method of correcting magnetic field distribution information of a fringe field, characterized by, The application is applied to the correction system of the edge field magnetic field distribution information, the correction system of the edge field magnetic field distribution information includes Faraday cup, Hall probe array, Helmholtz coil group and magnetic shielding box, the correction method of the edge field magnetic field distribution information includes: According to the preset moving distance data, the Faraday cup and the Hall probe array are controlled to move; In the moving state, the beam focusing degree, the beam horizontal offset and the extended edge field magnetic field distribution information are monitored by the Faraday cup and the Hall probe array; According to the beam focusing degree, the preset focusing degree setting value, the beam horizontal offset and the preset offset setting value, the trajectory analysis is carried out on the extended edge field magnetic field distribution information, so as to obtain the ideal ion motion trajectory; The trajectory analysis is carried out on the extended edge field magnetic field distribution information according to the beam focusing degree, the preset focusing degree setting value, the beam horizontal offset and the preset offset setting value, so as to obtain the ideal ion motion trajectory; The trajectory analysis is carried out on the extended edge field magnetic field distribution information according to the beam focusing degree, the preset focusing degree setting value, the beam horizontal offset and the preset offset setting value, so as to obtain the ideal ion motion trajectory; It is judged whether the beam horizontal offset is greater than or equal to the offset setting value or the beam focusing degree is greater than or equal to the focusing degree setting value; When the beam horizontal offset is greater than or equal to the offset setting value or the beam focusing degree is greater than or equal to the focusing degree setting value, the trajectory analysis is carried out on the extended edge field magnetic field distribution information according to the beam focusing degree and the beam horizontal offset, so as to obtain the ideal ion motion trajectory; 2. The method of correcting magnetic field distribution information of a fringe field according to claim 1, wherein According to the extended edge field magnetic field distribution information and the ideal ion motion trajectory, the Helmholtz coil group and the magnetic shielding box are adjusted, so as to obtain the corrected extended edge field magnetic field distribution information. The trajectory analysis is carried out on the extended edge field magnetic field distribution information according to the beam focusing degree, the preset focusing degree setting value, the beam horizontal offset and the preset offset setting value, so as to obtain the ideal ion motion trajectory; The extended edge field magnetic field distribution information is monitored by the Faraday cup and the Hall probe array; The beam size data is obtained by the Faraday cup; The beam distribution curve is drawn according to the moving distance data and the beam size data; 3. The method of correcting magnetic field distribution information of an edge field as defined in claim 2, characterized by, The beam focusing degree and the beam horizontal offset are obtained by analyzing the beam distribution curve. The trajectory analysis is carried out on the extended edge field magnetic field distribution information according to the beam focusing degree, the preset focusing degree setting value, the beam horizontal offset and the preset offset setting value, so as to obtain the ideal ion motion trajectory; The maximum value of the beam is obtained from the beam size data; The first abscissa and the second abscissa are obtained from the beam distribution curve according to the preset value ratio and the maximum value of the beam; The coordinate difference value is obtained by subtracting the first abscissa from the second abscissa; The beam focusing degree is obtained by taking the absolute value of the coordinate difference value; The beam value abscissa is obtained from the beam distribution curve; The peak value beam abscissa is obtained by peak value analysis on the preset ideal beam distribution curve; The beam offset value is obtained by subtracting the beam value abscissa from the peak value beam abscissa; 4. The method of correcting magnetic field distribution information of a magnetic field of a fringe field according to claim 1, wherein The beam horizontal offset is obtained by taking the absolute value of the beam offset value. The trajectory analysis is carried out on the extended edge field magnetic field distribution information according to the beam focusing degree, the preset focusing degree setting value, the beam horizontal offset and the preset offset setting value, so as to obtain the ideal ion motion trajectory; The ion motion trajectory is obtained by carrying out the trajectory analysis on the extended edge field magnetic field distribution information based on the preset fourth-order Runge-Kutta method; The beam current level deviation is analyzed according to the deviation value, so as to obtain a first deviation value; The beam current focusing degree is analyzed according to the focusing degree setting value, so as to obtain a second deviation value; The ion motion trajectory is fitted according to the preset interpolation algorithm, the first deviation value, the second deviation value and a preset variable coefficient, so as to obtain an ideal ion motion trajectory.

5. The method of correcting magnetic field distribution information of a magnetic field of a fringe field according to claim 4, characterized by, The trajectory analysis of the extended fringe field magnetic field distribution information is performed according to the preset fourth-order Runge-Kutta method, so as to obtain the ion motion trajectory, which comprises: The ion mass, ion charge and ion energy sequence are obtained; The extended fringe field magnetic field distribution information is fitted and analyzed according to the interpolation algorithm, so as to obtain an extended fringe field magnetic field distribution function; The trajectory analysis of the extended fringe field magnetic field distribution function, ion mass, ion charge and ion energy is performed according to the fourth-order Runge-Kutta method, so as to obtain the ion motion trajectory.

6. The method of correcting magnetic field distribution information of a magnetic field of a fringe field according to claim 5, characterized by, The Helmholtz coil set and the magnetic shielding box are adjusted according to the extended fringe field magnetic field distribution information and the ideal ion motion trajectory, so as to obtain the corrected extended fringe field magnetic field distribution information, which comprises: The deviation analysis of the extended fringe field magnetic field distribution information and the ideal ion motion trajectory is performed, so as to obtain a magnetic field size compensation value and a magnetic field width compensation value; The Helmholtz coil set is adjusted according to the magnetic field size compensation value; The magnetic shielding box is adjusted according to the magnetic field width compensation value; After the adjustment of the Helmholtz coil set and the magnetic shielding box is completed, the corrected extended fringe field magnetic field distribution information is obtained through the Hall probe array monitoring.

7. The method for correcting edge field magnetic field distribution information as described in claim 6, characterized in that, The deviation analysis of the extended fringe field magnetic field distribution information and the ideal ion motion trajectory is performed, so as to obtain a magnetic field size compensation value and a magnetic field width compensation value, which comprises: The ideal extended fringe field magnetic field distribution function is obtained by performing second-order derivation on the ideal ion motion trajectory according to the ion mass, ion charge and ion energy; The deviation analysis of the extended fringe field magnetic field distribution function and the ideal extended fringe field magnetic field distribution function is performed, so as to obtain a magnetic field size compensation value and a magnetic field width compensation value.

8. A correction device for fringe field magnetic field distribution information, characterized in that It comprises: The control module is used for controlling the Faraday cup and the Hall probe array to move according to the preset moving distance data; The monitoring module is used for monitoring the beam current focusing degree, the beam current level deviation and the extended fringe field magnetic field distribution information through the Faraday cup and the Hall probe array in the moving state; The trajectory analysis module is used for performing the trajectory analysis of the extended fringe field magnetic field distribution information according to the beam current focusing degree, the preset focusing degree setting value, the beam current level deviation and the preset deviation value setting, so as to obtain the ideal ion motion trajectory, which specifically comprises the following steps: It is judged whether the beam current level deviation is greater than or equal to the deviation value setting or the beam current focusing degree is greater than or equal to the focusing degree setting value; When the beam current level deviation is greater than or equal to the deviation value setting or the beam current focusing degree is greater than or equal to the focusing degree setting value, the trajectory analysis of the extended fringe field magnetic field distribution information is performed according to the beam current focusing degree and the beam current level deviation, so as to obtain the ideal ion motion trajectory; The adjustment module is used for adjusting the Helmholtz coil set and the magnetic shielding box according to the extended fringe field magnetic field distribution information and the ideal ion motion trajectory, so as to obtain the corrected extended fringe field magnetic field distribution information.

9. A correction device of a magnetic field distribution information of a fringe field, characterized by The correction device of the magnetic field distribution information of the fringe field comprises a memory and at least one processor, wherein the memory stores instructions; The at least one processor invokes the instructions in the memory, so that the correction device of the magnetic field distribution information of the fringe field executes the steps of the correction method of the magnetic field distribution information of the fringe field according to any one of claims 1-7.

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