Semiconductor inspection system

Abstract

The invention provides a semiconductor inspection system having anisotropy and durability, a socket for semiconductor inspection, and a semiconductor detector. The semiconductor inspection system is provided with: a non-conductive resin body (10) having a plurality of contacts (20) of a conductive filler (30); a network body (40, 60) in which a plurality of intersection points (50, 70) are electrically conductive; the semiconductor inspection system is manufactured by clinging the resin body 10 to the mesh bodies 40, 60 in a state in which the intersection points 50, 70 are aligned with the positions of the contacts 20.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor inspection system, and particularly to a semiconductor inspection system that inspects electrical characteristics of a semiconductor device. BACKGROUND

[0002] In Patent Literature 1, a probe piece that can achieve excellent anisotropy and durability even in a terminal with a fine pitch is disclosed. The probe piece includes: a flexible piece having a plurality of through holes; a first elastic body layer disposed on one surface of the flexible piece; a second elastic body layer disposed on the other surface of the flexible piece; and a continuous portion formed by electrically conductive particles penetrating the through holes from the surface of the first elastic body layer to the surface of the second elastic body layer and continuously existing in the thickness direction.

[0003] Patent Literature 1: Japanese Patent Application Publication No. 2021-086676 SUMMARY PROBLEMS TO BE SOLVED BY THE INVENTION However, the probe piece disclosed in Patent Literature 1 has the following problem. When evaluating the electrical characteristics of a semiconductor device, the contact repeatedly contacts the solder electrode, and thus the material of the solder electrode is transferred to the contact as the inspection proceeds. As a result, the resistance value of the current path from the solder electrode to the contact changes unpredictably.

[0004] In addition, the probe piece disclosed in Patent Literature 1 has the following problem. When evaluating the electrical characteristics of a semiconductor device, the elastic body debris or the like generated by friction with the contact is present more or less. If such debris is dispersed between the contact and the solder electrode by chance, the electrical contact of the debris is hindered, and even if the contact is normally made, a faulty result can be obtained.

[0005] Note that this problem occurs not only when the shape of each contact is formed of a plurality of electrically conductive particles as in Patent Literature 1, but also when the shape of each contact is formed of a single electrically conductive fine wire and when the central portion or the like is formed of an S-shaped electrically conductive body.

[0006] Therefore, the present application aims to provide a semiconductor inspection system that can solve the technical problem points that occur when a resin body including an elastic body is used, regardless of the shape of the contact.

[0007] MEANS FOR SOLVING THE PROBLEMS To solve the above-described problems, the semiconductor inspection system of the present application includes: a non-conductive resin body that determines the positions of a plurality of contacts that make electrical contact with a plurality of electrodes provided in an inspection target, respectively. A mesh body is located at a position of a surface of the resin body opposite the inspection object, and a plurality of intersection portions of the mesh body have electrical conductivity.

[0008] Note that the mesh body can function as a prevention body that prevents dispersion of the fluff of the resin body resulting from friction with the respective contacts.

[0009] In addition, the mesh body can function as a prevention body that prevents the respective contacts from being detached from the resin.

[0010] Further, another mesh body other than the mesh body is located at a position of a back surface of the opposite surface.

[0011] In addition, the semiconductor inspection system can further include a semiconductor inspection socket that accommodates the resin body. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a schematic exploded sectional view of a semiconductor inspection system of Embodiment 1 of the present application.

[0013] Figure 2 is a schematic view of the mesh body 40 shown in Figure 1

[0014] Figure 3 is a schematic view of the mesh body 40 shown in Figure 2

[0015] Figure 4 is a schematic exploded sectional view of a semiconductor inspection system of Embodiment 2 of the present application.

[0016] Figure 5 is a schematic exploded sectional view of a semiconductor inspection system of Embodiment 3 of the present application.

[0017] Figure 6 is an explanatory view of the mesh body 40 of Embodiment 4 of the present application.

[0018] Figure 7 is an explanatory view of the mesh body 40 of Embodiment 5 of the present application.

[0019] EXPLANATION OF REFERENCE NUMERALS 10: Resin body 20: Contact 30, 32: Electrically conductive filler 34: Probe 40, 60: Mesh body 41: Covered region 42: Non-covered region 43: Noble metal fiber 44: Mesh-like fiber body ​​45: fiber 46: non-noble metal fiber 48, 49: mesh-like fiber body 50, 70: intersection portion DETAILED DESCRIPTION Hereinafter, semiconductor inspection systems according to respective embodiments of the present application will be described with reference to the drawings. Note that the same parts are denoted by the same reference numerals between corresponding drawings, and the dimensions of some parts are different from actual dimensions for the sake of understanding. In addition, a typical example of a semiconductor inspection system is shown in Embodiment 1, and in Embodiments 2 and 3, modification examples of the resin body 10 of Embodiment 1 are mainly shown; in Embodiments 4 and 5, modification examples of the mesh body 40 of Embodiment 1 are mainly shown.

[0020] (Embodiment 1) Figure 1 is a schematic exploded sectional view of a semiconductor inspection system according to Embodiment 1 of the present application. Figure 1 The semiconductor inspection system shown in FIG. 1 is for inspecting an inspection object such as a semiconductor package, and is roughly divided into a resin body 10 and mesh bodies 40, 60 which will be described hereinafter.

[0021] The resin body 10 is made of silicone rubber, urethane rubber, acrylic rubber, or the like, has non-conductivity and flexibility, and is a base of the semiconductor inspection system according to the present embodiment. The size of the resin body 10 is matched with the size of the inspection object, and the thickness thereof can be determined in a range of, for example, about 300 μm to about 1000 μm.

[0022] The resin body 10 determines the positions of a plurality of contacts which are arranged in accordance with an array of a plurality of electrodes of the inspection object on which electrodes (including terminals) are generally formed in a convex or concave shape. The contacts 20 are, for example, formed at 5,000 to about 25,000 contacts per 1 cm2of the resin body 10. If the plurality of electrodes of the inspection object are arranged two-dimensionally at a pitch of, for example, 150 μm, the contacts 20 can also be arranged two-dimensionally at a pitch of, for example, 150 μm.

[0023] The contacts 20 are, for example, made of a plurality of granular conductive fillers 30 such as metal particles. The shape of the contacts 20 can be, for example, cylindrical or prismatic. In the case where the shape of the contacts 20 is cylindrical, the diameter thereof can be, for example, about half to the same size as the electrode of the inspection object, and specifically, can be determined in a range of about 150 μm to about 600 μm.

[0024] The electrically conductive filler 30 can be gold, copper, nickel, or an alloy thereof, and can also be a filler plated as needed on the surface, a filler having silver particles of nanometer size (nano silver) or graphene attached thereto.

[0025] The electrically conductive filler 30, although not limited thereto, can have a first average particle diameter appropriately selected within a range of about 5 μm to about 50 μm, and can have an irregular shape having projections and depressions, although not particularly limited thereto. Such conditions can be selected from the viewpoint of optimizing the contact area of the electrically conductive fillers 30 with each other and optimizing the contact resistance. Of course, the electrically conductive filler 30 is not necessarily in a granular (spherical) shape, and can be, for example, an S-shaped, C-shaped, I-shaped, or the like.

[0026] The electrically conductive filler 30 is mixed, for example, in a resin body 10 that is a precursor before curing, and a strong magnetic field is formed by applying a magnetic force to the position where the contact 20 is to be formed in this state, so that the electrically conductive filler 30 is aggregated at the position of the strong magnetic field, and the resin body 10 is cured in this state. If so, each contact 20 is isolated by the resin body 10 to become an insulating state, and the electrically conductive filler 30 in each contact 20 becomes a state in which they are in contact with each other.

[0027] Note that, although Figure 1 The state in which the electrically conductive fillers 30 adjacent to each other are all in contact with each other is shown in FIG. 6, but it is not necessary for them to be in contact in this manner. When the resin body 10 is pressed from the top and bottom directions of the figure, the electrically conductive fillers 30 at the upper end and the lower end of the contact 20 are in contact with each other through the electrically conductive fillers 30 at the middle portion, as long as the surface-to-back surface of the resin body 10 is in a conductive state.

[0028] The mesh body 40, 60 is located in the resin body 10 in the present embodiment at a surface opposite to the inspection object and the back surface of the opposite surface, respectively. The mesh body 40, 60 is formed in a mesh shape as described below, and is formed with a plurality of intersection portions 50, 70, respectively.

[0029] Therefore, when the semiconductor inspection system is used, the direct contact object of the contact 20 is the mesh body 40, 60, not the electrode of the inspection object, so the mesh body 40 can function as a preventive body that prevents the material of the electrode from being transferred to the contact 20 (first effect).

[0030] In addition, the mesh body 40, when the semiconductor inspection system is used, can function as a preventive body that prevents the detachment of the resin chips and the like that are generated more or less due to the friction of the resin body 10 with the contact 20 from being dispersed between the contact 20 and the electrode (second effect).

[0031] Further, in the present embodiment, the mesh body 40, 60 also functions as a preventive body that prevents the conductive filler 30 from being peeled off from the resin body 10, which tends to occur more or less when the conductive filler 30 is repeatedly subjected to stress applied on the contact 20 when the semiconductor inspection system is used (3rd effect).

[0032] In the present embodiment, in order to ensure such an effect, although not limited thereto, the mesh body 40, 60 can be sized so as to cover the contact 20 forming region in the resin body 10, and can be sized so as to have a thickness of about 1 / 10 to 3 / 10 of the thickness of the resin body 10.

[0033] The mesh body 40, 60, for example, has a plurality of intersection portions 50, 70 each having conductivity. The pitch dimension of each intersection portion 50, 70 can be sized so as to be less than or equal to the pitch dimension of each contact 20, so that each intersection portion 50, 70 can be in contact with each contact 20 at N: 1 (N is 1 or more).

[0034] Note that the resin body 10 and the mesh body 40, 60 can be in close contact or not. Whether or not to be in close contact can be determined, for example, according to the degree of the pitch dimension of the intersection portion 50, 70 and the contact 20. For example, in the case where the intersection portion 50, 70 and the contact 20 are in contact at close to 1: 1, they can be in close contact in order to avoid misalignment of their positions.

[0035] In the case where the resin body 10 and the mesh body 40, 60 are in close contact, for example, they can be integrated by applying a magnetic field to the resin body 10 before curing in a state where the mesh body 40, 60 is in face-to-face contact with the resin body 10, or the resin body 10 after curing and the mesh body 40, 60 can be fired to be joined in the surrounding region of the contact 20 in the resin body 10.

[0036] On the other hand, in the case where the resin body 10 and the mesh body 40, 60 are not in close contact, for example, the mesh body 40, 60, which has been transferred with a considerable number of electrodes of the inspection object, can be appropriately replaced with a new mesh body according to the number of tests (for example, every 100,000 times) of the semiconductor inspection system.

[0037] Note that the semiconductor inspection system of the present embodiment does not necessarily have both the mesh body 40, 60 on both surfaces of the resin body 10. For example, there are so-called contact probes, which are called single-sided probes in which only one of the two ends is movable, and which are called double-sided probes in which both ends are movable, and in the case where the contact 20 is configured as the former, only the mesh body 40 can be provided.

[0038] Figure 2 is Figure 1A schematic view of the mesh body 40 is shown. Note that, with respect to the mesh body 60, a mesh body manufactured under the same conditions as the mesh body 40 can also be used. As shown in FIG. 1, the mesh body 40 is mesh-like, and can be formed of a woven fabric, a nonwoven fabric, or a similar fibrous body. The raw material thereof can be selected from, for example, insulating raw materials. Figure 2

[0039] The mesh body 40 is formed of a plurality of fibers 45 arranged in a lattice shape. The fiber 45 itself can be selected from insulating raw materials (non-conductive fibers) having flexibility, and can be formed of, for example, a fiber selected from among glass fibers, chemical fibers, carbon fibers, and the like.

[0040] The surface of each fiber 45 can be roughly divided into a covered region 41 covered with a noble metal and an uncovered region 42 not covered with the noble metal at least around the periphery. The noble metal can be a metal having conductivity, such as gold, silver, platinum, and the like.

[0041] The diameter of the fiber 45 The specifications of the fiber 45, such as the strength and the like, are not particularly limited, and a fiber having a diameter of about 5 μm to 100 μm and a hardness of 1 or more can be appropriately selected. Note that, the smaller the diameter of the fiber 45, the greater the number of the intersection portions 50, 70, and thus the number of the intersection portions 50, 70 in contact with each of the contacts 20 also increases.

[0042] As shown in FIG. 2, either one of the covered region 41 and the uncovered region 42 is formed on the surface of the fiber 45. Specifically, the covered region 41 can be formed on the intersection portion 50 formed of the fibers 45 orthogonal to each other, in which case the intersection portion 50 is normally in an electrically short-circuited state due to the contact of the fibers 45 with each other. Figure 2

[0043] On the other hand, the uncovered region 42 can be formed between adjacent intersection portions 50, in which case the uncovered region 42 is normally in an electrically open-circuited state due to the gap between the fibers 45, regardless of whether the fibers 45 are in contact with each other or not.

[0044] Of course, it is not necessary that the covered region 41 be formed on all of the intersection portions 50, and the uncovered region 42 can not be formed between all of the intersection portions 50. For example, the size of the formation region of the covered region 41 can be determined in accordance with the size of the electrode to be inspected.

[0045] ​​That is, when the mesh body 40 is intended to be used for an electrode such as a pad electrode having a relatively large area, a relatively larger contact area can be obtained by forming the covered area 41 across any two or more adjacent intersection portions 50 and therebetween. On the contrary, when the mesh body 40 is intended to be used for an electrode having a relatively small area, the uncovered area 42 can be formed across any two or more adjacent intersection portions 50 and therebetween.

[0046] Further, the formation step and method of the covered area 41 in the manufacturing process of the mesh body 40 are not limited, and for example, the mesh body 40 can be manufactured by weaving the fiber 45 which has been brought into contact with a noble metal plating solution or a noble metal gas and formed the covered area 41, or the mesh body 40 can be manufactured by weaving the fiber 45 which has not been formed the covered area 41 and then bringing the intersection portion 50 into contact with a noble metal plating solution or a noble metal gas.

[0047] Thus, the surface of each fiber 45 is covered with the noble metal at each intersection portion 50, and becomes an electrically short-circuited state. On the other hand, the intersection portion 50 and the adjacent intersection portion 50 therebetween are not covered with the noble metal, and become an electrically open-circuited state.

[0048] In the present embodiment, after the covered area 41 is formed with a prescribed noble metal over the entire surface, the prescribed position can be etched using an etching solution corresponding to the noble metal to remove the noble metal, thereby forming the uncovered area 42. Of course, in this case, it is necessary to select an etching solution which satisfies the condition that the fiber 45 itself is not dissolved.

[0049] Further, the uncovered area 42 does not necessarily have to be formed by etching, and can be formed by a chemical treatment other than etching, or can be formed by a mechanical treatment such as sandblasting, ion irradiation, or the like.

[0050] Figure 3 is Figure 2 a schematic view of the mesh body 40. First, a fiber 45 which is a noble metal fiber 43 covered with a noble metal or the like is prepared ( Figure 3 (a).

[0051] Then, the noble metal fiber 43 is woven into a suitable lattice shape, thereby manufacturing a mesh-like fiber body 44 composed of the fiber 45 ( Figure 3 (b).

[0052] Thus, the mesh-like fiber body 44 is such that the surface of the fiber 45 constituting the fiber body is entirely covered with the noble metal, and only the covered area 41 is formed.

[0053] Next, after each intersection portion 50 of the fiber 45 is shielded using a resist or the like, for example, etching between the intersection portions 50 of the fiber 45 is performed by immersing in an etching solution, thereby dissolving the noble metal of the portion to form the non-covered region 42 Figure 3 (c).

[0054] As a result, in the mesh-like fiber body 44, the covered region 41 and the non-covered region 42 are formed as described above. Figure 2

[0055] In the case of the present embodiment, the interval between the intersection portion 50 of the fiber 45 and the adjacent intersection portion 50 is relatively narrow, which has an advantage of increasing the number of the intersection portions 50 of the fiber 45 per unit area.

[0056] (Embodiment 2) Figure 4 is a schematic exploded sectional view of a semiconductor inspection system according to Embodiment 2 of the present application. Figure 4 The semiconductor inspection system shown in the figure is different from the semiconductor inspection system shown in Figure 1 In particular, Figure 1 Each of the contacts 20 shown in the figure is composed of a plurality of electrically conductive fillers 30, whereas Figure 4 Each of the contacts 20 shown in the figure is composed of a single electrically conductive filler 32 in the form of a needle such as a metal thin wire.

[0057] The electrically conductive filler 32, like the electrically conductive filler 30, can be made of gold, copper, nickel, or the like. The electrically conductive filler 32 can be selected to have a diameter of about 5 μm to about 50 μm, for example. Note that, although the electrically conductive filler 32 is shown as being arranged obliquely in the figure, it is not necessarily so. In the case of oblique arrangement, there are advantages of high density due to an increase in the number of the electrically conductive fillers 32, thinness of the semiconductor inspection system, and improvement in the deformation resistance of the electrically conductive fillers 32. Figure 4

[0058] The semiconductor inspection system of the present embodiment, like the semiconductor inspection system of Embodiment 1, has any one of the effects of preventing the electrode material from being transferred (first effect), preventing the dispersion of the detached matter such as resin chips (second effect), and preventing the electrically conductive fillers 32 from being detached from the resin body 10 (third effect).

[0059] (Embodiment 3) Figure 5 is a schematic sectional view of a semiconductor inspection system according to Embodiment 3 of the present application. Figure 5 The semiconductor inspection system shown in the figure, like the semiconductor inspection system of Embodiment 2, is different from the semiconductor inspection system shown in Figure 1 ​​As shown in FIG. 1, the semiconductor inspection system 1 includes a resin body 10, a net body 40, and a semiconductor inspection device 50. Figure 5 Each of the contacts 20 shown in FIG. 1 has a width in the front and back direction of the drawing that is, for example, 5 to 20 times (for example, 100 μm to 1000 μm) the thickness in the inward direction of the drawing, and is composed of a probe 34 having an elastic flat surface in an S shape in the central portion.

[0060] The probe 34, like the conductive filler 30, can use gold, copper, nickel, or the like. Note that the probe 34 is not limited to being flat as shown in FIG. 1, but can be, for example, a cylindrical shape having an elastic spiral in the central portion. Figure 5 The probe 34, like the conductive filler 30, can use gold, copper, nickel, or the like. Note that the probe 34 is not limited to being flat as shown in FIG. 1, but can be, for example, a cylindrical shape having an elastic spiral in the central portion.

[0061] The semiconductor inspection system of the present embodiment, like the semiconductor inspection system of Embodiment 1, the net body 40 has the first and second effects described above. Note that the net body 40 does not have the third effect, but the probe 34 is a shape that is inherently difficult to fall off from the resin body 10, so the contribution to the first and second effects is relatively high.

[0062] (Embodiment 4) Figure 6 is a diagram illustrating the net body 40 of Embodiment 4 of the present application. Note that the net body 40 shown in Figure 6 can be used in combination with any of the resin bodies 10 shown in Figure 1 , Figure 4 and Figure 5 . In addition, the net body 60, for example, can use a net body that is the same as any of the net bodies 40 shown in Figure 2 , Figure 6 and the net body described below. Figure 7

[0063] In the present embodiment, first, as a precursor of the fiber 45, a noble metal fiber 43 covered with a noble metal, and an insulating fiber not covered with a noble metal or a non-noble metal fiber 46 containing a metal fiber such as copper (a Figure 6 (a).

[0064] Next, the noble metal fiber 43 and the non-noble metal fiber 46 are woven into a suitable lattice shape, thereby manufacturing a mesh-like fiber body 48 (b). Figure 6

[0065] Therefore, the mesh-like fiber body 48 has about half of the surface of the fiber 45 that constitutes the fiber body partially covered with a noble metal, and is formed so that the covered region 41 and the non-covered region 42 are mixed.​​

[0066] Note that, as an example, the fibers 45 of odd-numbered rows and odd-numbered columns can be assigned as the noble metal fibers 43, and the fibers 45 of even-numbered rows and even-numbered columns can be assigned as the non-noble metal fibers 46. Also, as another example, the fibers 45 of rows that are multiples of 3 and columns that are multiples of 3 can be set as the noble metal fibers 43, and the fibers 45 of other rows and other columns can be set as the non-noble metal fibers 46.

[0067] In the case of the present embodiment, after the respective intersection portions 50 of the noble metal fibers 43 are masked and the like using a resist, etching is performed between the respective intersection portions 50 of the noble metal fibers 43 by immersion in an etching solution, whereby the noble metal of the portion is dissolved to form the non-coverage region 42. Figure 6 (c).

[0068] Note that, for the sake of caution, as long as the respective intersection portions 50 of the noble metal fibers 43 can be insulated from each other, the etching target in the present example can be selected only from the respective intersections of the non-noble metal fibers 46 that are orthogonal to each other.

[0069] The mesh body 40 of the present example, compared with the embodiment described above, can sufficiently secure the region that should be etched because the non-noble metal fibers 46 are located between the intersection portion 50 of the noble metal fiber 43 and the intersection portion 50 adjacent thereto. Therefore, the present example has the advantage that the etching process including the masking process can be easily performed.

[0070] (Embodiment 5) Figure 7 Fig. 17 is a diagram for explaining the mesh body 40 of Embodiment 5 of the present application. In the present example, instead of preparing the fibers 45 as they are, a mesh-like fiber body 49 that has been woven from the non-noble metal fibers 46 is prepared. Figure 7 (a).

[0071] That is, as the mesh-like fiber body 49, a general cloth can be prepared as it is. Therefore, the mesh-like fiber body 49, the surfaces of the fibers 45 that constitute the fiber body are not all covered with noble metal, which is the same as meaning that only the non-coverage region 42 is formed.

[0072] Of course, the mesh-like fiber body 49 must be a cloth and the like made of fibers of a raw material that does not cause an obstacle when the non-noble metal fibers 46 are formed. Specifically, in the case where the non-noble metal fibers 46 are formed by etching, it must be a cloth and the like made of fibers of a raw material that does not dissolve in the etching solution.

[0073] Then, the mesh-like fiber body 49 is immersed in a noble metal plating solution for a prescribed time, and the entire body is covered with a noble metal. Thus, the mesh-like fiber body 49, the surfaces of the fibers 45 constituting the fiber body are entirely covered with a noble metal, and only the covered regions 41 are formed. Figure 7 (b).

[0074] Thus, after the respective intersection portions 50 of the noble metal fibers 43 are shielded using a resist or the like, and the like, immersion in an etching solution is performed to etch between the respective intersection portions 50, and the like, and the noble metal of this portion is dissolved and the uncovered regions 42 are formed. Figure 7 (c).

[0075] As a result, in the mesh-like fiber body 49, as described using Figure 2 the covered regions 41 and the uncovered regions 42 are formed.

[0076] The mesh body 40 of the present embodiment, compared to the embodiments described above, is able to cover the existing general mesh-like fiber body 49C with a desired noble metal, and has the advantage that the degree of freedom of selection of the noble metal is increased.

[0077] Although the semiconductor inspection systems of the respective embodiments have been described above, the resin body 10 and the mesh bodies 40, 60 are also able to be used for semiconductor inspection in a state in which they are mounted to a socket for semiconductor inspection.

Claims

1. A semiconductor inspection system, comprising: A non-conductive resin body defines the positions of multiple contacts that make electrical contact with multiple electrodes disposed in the object being inspected; and A mesh is located on the surface of the resin body opposite to the object being inspected, and the multiple intersections of the mesh are conductive.

2. The semiconductor inspection system of claim 1, wherein, The mesh serves as a preventive material to prevent the dispersion of resin material shed due to friction with each of the contacts.

3. The semiconductor inspection system as claimed in claim 1, wherein, The mesh serves as a preventive body to prevent the contacts from detaching from the resin.

4. The semiconductor inspection system as claimed in claim 1, wherein, Other meshes besides the aforementioned mesh are located on the back side of the opposite face.

5. The semiconductor inspection system as claimed in claim 1, wherein, It has a semiconductor inspection socket for housing the resin body.

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