Multi-band spectrum filtering method based on on-chip heterogeneous integration

Abstract

The invention relates to the technical field of semiconductors, in particular to a multi-band spectrum filtering method based on on-chip heterogeneous integration, which specifically comprises the following steps of: performing partition processing on a heterogeneous filtering unit to obtain a heterogeneous filtering unit initial structure containing an interface buffer layer; key filtering area identification and temperature threshold setting processing are carried out through on-chip heat distribution simulation model optimization, and a stress balance type filtering module containing a local micro thermal control module is obtained; accessing a spectrum test system to obtain a stabilized on-chip heterogeneous filtering module with a spectrum correction function; the method is applied to a stability verification condition of a high-power laser actual incidence condition, and a result is output as a multi-band stable spectrum filtering result in a high-power scene. The problems that in the prior art, due to the fact that the working state cannot be dynamically adjusted, crosstalk and performance inconsistency between filtering channels are caused, and the reliability and the service life in a high-power application scene are limited are solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and is a multi-band spectral filtering method based on on-chip heterogeneous integration. BACKGROUND

[0002] At present, with the development of photonic integration technology towards multi-function and high performance, the on-chip spectral filtering system faces severe challenges in processing multi-band laser signals; the traditional filtering structure based on a single material system or simple homogeneous integration cannot meet the performance requirements of multiple target frequency bands, and when different optical materials are used for heterogeneous integration, the mismatch of the thermal expansion coefficients between the materials will cause significant interfacial thermal stress and mechanical deformation under high-power laser incidence, resulting in a decrease in the reliability of the device structure and even interfacial delamination failure; at the same time, the local temperature rise caused by laser energy absorption will change the refractive index and physical size of the material through the thermo-optic effect and thermal expansion effect, causing the center wavelength of the filtering channel to drift, the bandwidth to widen, and the peak intensity to fluctuate, which will destroy the accuracy and stability of the filtering spectrum; the existing thermal management methods mostly use global heat dissipation strategies, which cannot effectively cope with the uneven temperature distribution on the microscale, especially the thermal gradient control capability of the key regions such as waveguide coupling regions and material interfaces, resulting in the continuous accumulation of thermal stress and affecting the optical performance; in addition, the existing technology lacks precise simulation and optimization means for the stress distribution of multi-material interfaces, fails to introduce an effective stress buffering mechanism, and also fails to integrate local temperature control elements in the key functional areas to achieve dynamic thermal compensation, resulting in poor spectral output stability of the filtering module under variable power conditions; at the system level, the traditional scheme lacks real-time spectral monitoring and closed-loop correction functions, and cannot dynamically adjust the working state according to the deviation between the measured spectral matrix and the target matrix, resulting in channel crosstalk and performance inconsistency between multiple frequency bands, which limits the reliability and service life in high-power application scenarios such as high-speed communication and precise spectral analysis. SUMMARY

[0003] The technical problem to be solved by the present application is that the existing technology cannot dynamically adjust the working state, resulting in channel crosstalk and performance inconsistency between filtering channels, which limits the reliability and service life in high-power application scenarios.

[0004] In order to achieve the above purpose, the technical scheme of the multi-band spectral filtering method based on on-chip heterogeneous integration of the present application comprises the following steps: S1: partitioning the heterogeneous filtering unit to obtain a target frequency band parameter set and a candidate material parameter set, and introducing a buffer layer structure between the material interfaces to obtain an initial structure of the heterogeneous filtering unit containing an interface buffer layer; S2: Input the initial structure of the heterogeneous filter unit containing the interface buffer layer into the on-chip thermal distribution simulation model to simulate the three-dimensional steady-state temperature field distribution and interface thermal stress distribution under high-power laser incident conditions, and optimize the initial structure of the heterogeneous filter unit containing the interface buffer layer to obtain the optimized initial structure of the heterogeneous filter unit. S3: The initial structure of the optimized heterogeneous filter unit is subjected to key filter area identification and temperature threshold setting, and a local micro thermal control module is embedded. At the same time, a local temperature gradient dynamic adjustment mechanism is established to obtain a stress-balanced filter module containing a local micro thermal control module. S4: Connect the stress equalization filter module to the spectral testing system, monitor the spectral measurement matrix output of each frequency band and compare it with the target spectral matrix, and at the same time calibrate the stress equalization filter module to obtain a stable on-chip heterogeneous filter module with spectral correction function. S5: Apply the stabilized on-chip heterogeneous filter module to the actual incident conditions of high-power laser, and compare the output spectral matrix with the target spectral matrix. At the same time, preset the stability verification conditions, and output the result after passing the stability verification as the multi-band stable spectral filtering result that meets the requirements of high-power scenarios.

[0005] Preferably, S1 includes: S11: Partition the on-chip heterogeneous filter unit, assign each partition to a different target frequency band, and obtain the target frequency band parameter set and the candidate material parameter set; Simultaneously, a comparison matrix is ​​constructed, and matching materials are selected based on the minimum value of the comparison matrix to obtain a preliminary matching material-frequency band comparison table; S12: Based on the preliminary matching material-frequency band lookup table, the target frequency band and candidate materials are mapped to obtain the initial partitioning layout of the heterogeneous filter unit. ; S13: Based on the initial partitioning layout of the heterogeneous filter units The stress difference between adjacent material interfaces is calculated and processed, and all partitions are traversed to obtain the stress difference matrix at the interface of each partition. S14: By using the stress difference matrix at each partition interface, a buffer layer structure is introduced between each material interface to obtain the initial structure of the heterogeneous filter unit containing the interface buffer layer.

[0006] Preferably, S2 includes: S21: Input the initial structure of the heterogeneous filter unit containing the interface buffer layer into the on-chip thermal distribution simulation model, set the thermal field boundary conditions under the simulated high-power laser incident conditions, and construct the thermal field simulation boundary condition matrix. ; S22: Based on the boundary condition matrix of the thermal field simulation, perform finite element thermal distribution simulation processing, and output the simulation results as a three-dimensional steady-state temperature field distribution matrix; S23: Based on the three-dimensional steady-state temperature field distribution matrix, perform thermal stress distribution calculation to obtain the interface thermal stress distribution matrix; S24: Based on the three-dimensional steady-state temperature field distribution matrix and the interface thermal stress distribution matrix, the initial structure of the heterogeneous filter unit is optimized to obtain the optimized initial structure of the heterogeneous filter unit. .

[0007] Preferably, S3 includes: S31: Perform key region identification and temperature threshold setting processing on the optimized heterogeneous filter unit initial structure to obtain the key region set and the corresponding temperature threshold vector of the key region. S32: Based on the temperature threshold vector, generate a layout scheme for local micro thermal control modules for each key region in the set of key regions, and obtain the thermal control layout matrix. S33: For the local micro-thermal control modules in the thermal control layout matrix, a dynamic temperature regulation model is constructed to obtain a set of dynamic regulation response functions; S34: Couple the set of dynamic adjustment response functions with the initial structure of the heterogeneous filter unit, monitor the temperature of the key area in the initial structure of the heterogeneous filter unit in real time, and dynamically adjust the temperature of the key area to obtain a stress-balanced filter module with a local micro thermal control module embedded.

[0008] Preferably, S4 includes: S41: Connect the stress equalization filter module with embedded local micro thermal control module to the spectral testing system, collect the spectral output when working in each frequency band, and construct a spectral measurement matrix based on the collected spectral output; Simultaneously, the target frequency band parameter set is extracted, and the target spectral parameters are defined as the target spectral matrix; S42: Compare the spectral measurement matrix with the target spectral matrix, calculate the spectral drift error and the mapped residual stress for each frequency band, and obtain the drift error vector and the corresponding residual stress mapping matrix; S43: Based on the drift error vector and the corresponding residual stress mapping matrix, calculate the required adjustment of the thermal control module power correction for each key frequency band, and obtain the thermal control module drive power correction vector.

[0009] S44: Input the thermal control module drive power correction vector as a command to the local micro thermal control module in the stress equalization filter module, correct and verify it, and output the verification result as a stable on-chip heterogeneous filter module with spectral correction function.

[0010] Preferably, S5 includes: S51: Preset high-power incident power, place the stabilized on-chip heterogeneous filter module with spectral correction function under high-power laser incident conditions for spectral testing, obtain the spectral test output of each frequency band, and construct the spectral test output results of each frequency band into a spectral output matrix.

[0011] S52: Compare the spectral output matrix with the target spectral matrix, calculate the error between the spectral output matrix and the target spectral matrix, and obtain the stability verification vector; Simultaneously, based on the stability verification vector, a stability verification condition is preset, and a first stability verification is performed according to the stability verification condition. When the first stability verification is passed, the output stabilized on-chip heterogeneous filter module maintains stability under high-power laser incident; when the first stability verification fails, step S3 is repeated. S53: Perform peak intensity enhancement ratio tests on each frequency band in the spectral output matrix, and perform a second stability verification on the spectral filtering performance based on the test results of each frequency band. Output the results after passing the second stability verification as the multi-band stable spectral filtering results that meet the requirements of high-power scenarios.

[0012] Compared with the prior art, the technical effects of the present invention are as follows: 1. This invention effectively alleviates the problem of interface thermal stress concentration caused by the mismatch of thermal expansion coefficients between heterogeneous materials through partitioning and interface buffer layer design. Combined with on-chip thermal distribution simulation and structural optimization, it significantly reduces the stress peak in key areas such as waveguide coupling area and material interface, prevents device structural damage and performance degradation, and enhances mechanical robustness. 2. This invention establishes a dynamic temperature gradient adjustment mechanism by identifying key filtering regions and embedding local micro thermal control modules, thereby achieving precise control of the micro temperature field. This effectively suppresses the thermo-optical effect and thermal expansion effect caused by local temperature rise, thus significantly reducing the center wavelength drift and bandwidth fluctuation of each filtering channel and ensuring the consistency and accuracy of multi-band spectral output. 3. This invention integrates real-time spectral monitoring and closed-loop correction functions, compares the spectral measurement matrix with the target matrix in real time, and dynamically adjusts the driving power of the thermal control module based on drift error, enabling the filter module to have adaptive compensation capabilities. It can maintain the stability of filtering characteristics for a long time under high power incident conditions, significantly improving the operational reliability and spectral accuracy of the entire system over a wide power range, and providing a high-performance spectral filtering solution for high-power laser applications. Attached Figure Description

[0013] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein: Figure 1 This is a flowchart illustrating the multi-band spectral filtering method based on on-chip heterogeneous integration of the present invention. Detailed Implementation

[0014] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0015] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0016] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that is mutually exclusive with other embodiments.

[0017] Example 1:

[0018] like Figure 1 As shown, the multi-band spectral filtering method based on on-chip heterogeneous integration in this embodiment of the invention is as follows: Figure 1 As shown, the specific steps include the following: S1: The heterogeneous filter unit is partitioned to obtain the target frequency band parameter set and the candidate material parameter set. A buffer layer structure is introduced between the material interfaces to obtain the initial structure of the heterogeneous filter unit containing the interface buffer layer. S1 includes: S11: Partition the on-chip heterogeneous filter unit, assign each partition to a different target frequency band, and obtain the target frequency band parameter set and the candidate material parameter set; Simultaneously, a comparison matrix is ​​constructed, and matching materials are selected based on the minimum value of the comparison matrix to obtain a preliminary matching material-frequency band comparison table; For example, in this embodiment, the target frequency band parameter set specifically includes: ; in, Represents the set of parameters for the target frequency band; This represents the i-th target frequency band that needs filtering; it should be noted that, in this embodiment, And i is an integer; For example, in this embodiment, the candidate material parameter set specifically includes: ; in, Represents the set of candidate material parameters; Represents the refractive index of the j-th material; Represents the coefficient of thermal expansion of the j-th material; Let represent the thermal conductivity of the j-th material; it should be noted that, in this embodiment, And j is an integer; Exemplarily, in this embodiment, the comparison matrix Specifically: ; in, Indicates frequency band Required target refractive index; These are weighting coefficients. It should be noted that, in this embodiment, The value range is 0.1 to 1.0; Indicates frequency band The center value of the allowable range of thermal expansion coefficients; S12: Based on the preliminary matching material-frequency band lookup table, the target frequency band and candidate materials are mapped to obtain the initial partitioning layout of the heterogeneous filter unit. ; S13: Based on the initial partitioning layout of the heterogeneous filter units The stress difference between adjacent material interfaces is calculated and processed, and all partitions are traversed to obtain the stress difference matrix at the interface of each partition. For example, in this embodiment, a strategy for obtaining the stress difference at any partition interface is provided, specifically as follows: ; in, This represents the stress difference at the partition interface; Let a be the coefficient of thermal expansion of material a; Let b be the coefficient of thermal expansion of material b. The stress difference matrix at each partition interface is specifically constructed by: calculating the stress difference at the partition interface between different partitions, and traversing all partitions to construct the stress difference matrix at each partition interface using the calculated stress differences of all partitions. ; S14: By using the stress difference matrix at each partition interface, a buffer layer structure is introduced between each material interface to obtain the initial structure of the heterogeneous filter unit containing the interface buffer layer.

[0019] It should be noted that, in this embodiment, the stress difference at each partition interface is determined based on the stress difference matrix at each partition interface. Greater than the preset threshold At that time, a buffer layer material was introduced. ; The coefficient of thermal expansion of the buffer layer material satisfy: ; The refractive index of the buffer layer material satisfy: ; Continuing to introduce buffer layer structures layer by layer, the heterogeneous filter unit output after introducing the buffer layer structure becomes the initial structure of the heterogeneous filter unit containing the interface buffer layer. .

[0020] S2: Input the initial structure of the heterogeneous filter unit containing the interface buffer layer into the on-chip thermal distribution simulation model to simulate the three-dimensional steady-state temperature field distribution and interface thermal stress distribution under high-power laser incident conditions, and optimize the initial structure of the heterogeneous filter unit containing the interface buffer layer to obtain the optimized initial structure of the heterogeneous filter unit. S2 includes: S21: Input the initial structure of the heterogeneous filter unit containing the interface buffer layer into the on-chip thermal distribution simulation model, set the thermal field boundary conditions under the simulated high-power laser incident conditions, and construct the thermal field simulation boundary condition matrix. ; Specifically, the thermal field boundary condition refers to the thermal power density distribution. For example, in this embodiment, a strategy for setting the thermal power density distribution is provided, specifically: ; in, Represents coordinates in three-dimensional space The heat power density at that location; This indicates the efficiency of converting light energy into heat energy. It should be noted that, in this embodiment, The value range is 0.1 to 0.3; This indicates the incident laser power density of a high-power laser. The absorption coefficient of the material; The depth coordinates represent the incident direction of the high-power laser. The thermal field boundary conditions of each partition are constructed into a thermal field simulation boundary condition matrix. ;in, This represents all spatial regions within the heterogeneous filter unit; S22: Based on the boundary condition matrix of the thermal field simulation, perform finite element thermal distribution simulation processing, and output the simulation results as a three-dimensional steady-state temperature field distribution matrix; For example, in this embodiment, the finite element heat distribution simulation process specifically includes: ; in, Indicates thermal conductivity; Indicates temperature; The simulation results are output as a three-dimensional steady-state temperature field distribution matrix, specifically: ; in, Representing spatial coordinates Temperature at that location; S23: Based on the three-dimensional steady-state temperature field distribution matrix, perform thermal stress distribution calculation to obtain the interface thermal stress distribution matrix; For example, in this embodiment, the thermal stress distribution calculation process is specifically as follows: ; in, Representing spatial coordinates Thermal stress at the location; Represents material field Modulus, it should be noted that, It is obtained from the set of candidate material parameters; Indicates the coefficient of thermal expansion of the material; Representing spatial coordinates Temperature at that location; The preset ambient reference temperature; it should be noted that, in this embodiment, The value range is 300k; For example, in this embodiment, the interface thermal stress distribution matrix Specifically: ; in, A collection of interface space regions; S24: Based on the three-dimensional steady-state temperature field distribution matrix and the interface thermal stress distribution matrix, the initial structure of the heterogeneous filter unit is optimized to obtain the optimized initial structure of the heterogeneous filter unit. .

[0021] For example, in this embodiment, the optimization process specifically involves: in the interface stress distribution matrix, when the stress peak value of a certain region... Exceeding the material's allowable threshold Therefore, it is necessary to optimize the initial structure of the heterogeneous filter unit, including: buffer layer thickness optimization and micro-ring radius optimization; For example, the optimization of the buffer layer thickness specifically involves: ; in, The optimized buffer layer thickness; This is the original thickness of the buffer layer; For example, the optimization of the micro-ring radius specifically involves: ; in, The optimized waveguide or microring radius; The radius of the original waveguide or micro-ring; It should be noted that the stress peak value It is the stress peak value of each key region extracted from the interface stress distribution matrix; the material allowable threshold. It is the material allowable threshold extracted from the initial structure of the heterogeneous filter unit based on the set of candidate material parameters; S3: The initial structure of the optimized heterogeneous filter unit is subjected to key filter area identification and temperature threshold setting, and a local micro thermal control module is embedded. At the same time, a local temperature gradient dynamic adjustment mechanism is established to obtain a stress-balanced filter module containing a local micro thermal control module. S3 includes: S31: Perform key region identification and temperature threshold setting processing on the optimized heterogeneous filter unit initial structure to obtain the key region set and the corresponding temperature threshold vector of the key region. For example, in this embodiment, the strategy for obtaining the key region set is as follows: in the initial structure of the heterogeneous filter unit, the optical functional areas are marked, including: waveguide coupling area and interface buffer layer; Based on the interface stress distribution matrix, regions containing stress peaks are selected and their intersection with optical functional areas is used to output a set of key regions. ;in, This represents the coordinates of the k-th key region. It should be noted that, in this embodiment, ; For example, in this embodiment, the strategy for obtaining the temperature threshold vector of the corresponding key region is as follows: for each key region in the set of key regions, based on the coefficient of thermal expansion, refractive index, and ambient reference temperature in the candidate material parameters, the temperature threshold of the key region is set to... By traversing each key region in the key region set and setting a temperature threshold for each key region, a temperature threshold vector corresponding to the key region is obtained. ,in, ; The temperature threshold is specifically: ,in, This represents the temperature threshold of the k-th critical region; Indicates the ambient reference temperature; This indicates the permissible temperature rise range in the environment. It should be noted that, in this embodiment, The value range is 5k~15k; S32: Based on the temperature threshold vector, generate a layout scheme for local micro thermal control modules for each key region in the set of key regions, and obtain the thermal control layout matrix. The local micro thermal control module includes: an electric heating element and a thermal conduction channel.

[0022] In this embodiment, the specific arrangement scheme of the local micro thermal control module is as follows: First, the heating element is placed around the interface buffer layer and the micro-ring coupling area. Then, the thermal conduction channel is connected to the external heat sink. Finally, the power density of the heating element is matched with the temperature threshold of the critical area. The thermal control arrangement matrix is ​​specifically as follows: ;in, Matrix for thermal control layout; This represents the coordinates of the k-th critical region; This refers to the arrangement parameters of the local micro thermal control module. In this embodiment, the local micro thermal control module arrangement parameters... Including the power density of electric heating elements and thermal conduction channel width It should be noted that, in this embodiment, the power density of the heating element is... The range of values ​​is ; thermal conduction channel width The range of values ​​is the range ; This represents the temperature threshold of the k-th critical region; S33: For the local micro-thermal control modules in the thermal control layout matrix, a dynamic temperature regulation model is constructed to obtain a set of dynamic regulation response functions; For example, in this embodiment, a dynamic adjustment response function for the y-th local micro thermal control module is provided, specifically as follows: ; in, This represents the output power of the y-th local micro thermal control module at time t; This indicates the power density of the heating elements in a localized micro thermal control module; This represents the response time constant. It should be noted that, in this embodiment... The value range is 0.1~1ms; It is a unit step function; This represents the temperature threshold of the k-th critical region; Indicates key areas The real-time temperature at time t; Continue iterating through each local micro-thermal control module in the thermal control layout matrix to obtain the dynamic adjustment response function of each local micro-thermal control module, and output the set of dynamic adjustment response functions. Specifically: ; S34: Couple the set of dynamic adjustment response functions with the initial structure of the heterogeneous filter unit, monitor the temperature of the key area in the initial structure of the heterogeneous filter unit in real time, and dynamically adjust the temperature of the key area to obtain a stress-balanced filter module with a local micro thermal control module embedded.

[0023] For example, in this embodiment, the stress-balancing filter module embedded with a local micro thermal control module specifically refers to: ; in, This represents the sum of residual stress in all critical areas of the heterogeneous filter unit after thermal control compensation. Indicates key areas The original thermal stress at time t; This represents the stress correction amount generated by the y-th local micro thermal control module through power compensation; The initial structure output of the heterogeneous filter unit in all critical regions after compensation and correction is a stress-balanced filter module with embedded local micro thermal control modules. .

[0024] S4: Connect the stress equalization filter module to the spectral testing system, monitor the spectral measurement matrix output of each frequency band and compare it with the target spectral matrix, and at the same time calibrate the stress equalization filter module to obtain a stable on-chip heterogeneous filter module with spectral correction function. S4 includes: S41: Connect the stress equalization filter module with embedded local micro thermal control module to the spectral testing system, collect the spectral output when working in each frequency band, and construct a spectral measurement matrix based on the collected spectral output; Simultaneously, the target frequency band parameter set is extracted, and the target spectral parameters are defined as the target spectral matrix; For example, in this embodiment, the spectral measurement matrix Specifically: ;in, This represents the measured center wavelength of the i-th frequency band; This represents the measured bandwidth of the i-th frequency band; This represents the measured peak intensity of the i-th frequency band; For example, in this embodiment, the target spectral matrix Specifically: ;in, Indicates the target center wavelength during the design phase; Indicates the target bandwidth during the design phase; Indicates the target peak intensity during the design phase; S42: Compare the spectral measurement matrix with the target spectral matrix, calculate the spectral drift error and the mapped residual stress for each frequency band, and obtain the drift error vector and the corresponding residual stress mapping matrix; For example, in this embodiment, the drift error vector Specifically, this means: the measured center wavelength of the i-th frequency band. With respect to the target center wavelength during design The difference between them is used as the spectral center wavelength shift of the i-th frequency band. Continue iterating through the spectral center wavelength shift sets of each frequency band and outputting the shift error vector. ; For example, in this embodiment, the corresponding residual stress mapping matrix Specifically, by leveraging the linear relationship between stress and drift error vector in a stress-balanced filter module embedded with a local micro-thermal control module, the drift amount of the i-th spectral center wavelength in the drift error vector is... Divide by the sensitivity coefficient of the material to stress changes specific to that frequency band. The residual stress corresponding to the i-th frequency band is obtained. Continue iterating through the residual stress sets corresponding to each frequency band, simultaneously establishing a residual stress mapping matrix, importing it, and outputting the corresponding residual stress mapping matrix. ; It should be noted that, in this embodiment, Obtained through materials experiments; S43: Based on the drift error vector and the corresponding residual stress mapping matrix, calculate the required adjustment of the thermal control module power correction for each key frequency band, and obtain the thermal control module drive power correction vector.

[0025] For example, in this embodiment, the thermal control module drives a power correction vector. Specifically: ;in, This represents the power correction value for the y-th thermal control module; This represents the compensation factor. It should be noted that, in this embodiment, The value range is 0.01~0.1mW / Pa; This represents the residual stress corresponding to the i-th frequency band; Continue iterating through each key frequency band, and output the power correction value of the thermal control module for each key frequency band as the thermal control module drive power correction vector. Specifically: ; S44: Input the thermal control module drive power correction vector as a command to the local micro thermal control module in the stress equalization filter module, correct and verify it, and output the verification result as a stable on-chip heterogeneous filter module with spectral correction function.

[0026] The driving power correction vector of the thermal control module is used as a command input to the local micro thermal control module in the stress equalization filter module to correct its driving power and obtain the corrected spectral matrix. For example, in this embodiment, the corrected spectral matrix Specifically: ;in, This represents the center wavelength of the i-th frequency band after correction; This represents the bandwidth of the i-th frequency band after correction; This represents the peak intensity of the i-th frequency band after correction; For example, in this embodiment, the stabilized on-chip heterogeneous filter module with spectral correction capability specifically means that, for each filter channel, when the absolute deviation between the center wavelength of the corrected i-th frequency band and the target center wavelength during design is less than or equal to a preset wavelength allowable deviation threshold... Within a certain range, the output is a stabilized on-chip heterogeneous filter module with spectral correction function. ; It should be noted that, in this embodiment, the preset wavelength allowable deviation threshold... The value range is 0.01~0.1nm; S5: Apply the stabilized on-chip heterogeneous filter module to the actual incident conditions of high-power laser, and compare the output spectral matrix with the target spectral matrix. At the same time, preset the stability verification conditions, and output the result after passing the stability verification as the multi-band stable spectral filtering result that meets the requirements of high-power scenarios.

[0027] S5 includes: S51: Preset high-power incident power, place the stabilized on-chip heterogeneous filter module with spectral correction function under high-power laser incident conditions for spectral testing, obtain the spectral test output of each frequency band, and construct the spectral test output results of each frequency band into a spectral output matrix.

[0028] It should be noted that, in this embodiment, the preset high-power incident power The value range is 0.01~0.1nm; For example, in this embodiment, the spectral output matrix Specifically: ; where, indicates The measured center wavelength of the i-th frequency band under high-power laser incident conditions; This represents the measured bandwidth of the i-th frequency band under high-power laser incident conditions; This represents the measured peak intensity in the i-th frequency band under high-power laser incident conditions; S52: Compare the spectral output matrix with the target spectral matrix, calculate the error between the spectral output matrix and the target spectral matrix, and obtain the stability verification vector; Simultaneously, based on the stability verification vector, a stability verification condition is preset, and a first stability verification is performed according to the stability verification condition. When the first stability verification is passed, the output stabilized on-chip heterogeneous filter module maintains stability under high-power laser incident; when the first stability verification fails, step S3 is repeated. The error between the spectral output matrix and the target spectral matrix includes: the center wavelength shift of each frequency band and the bandwidth error of each frequency band; For example, in this embodiment, the center wavelength shift of each frequency band is specifically as follows: ;in, This represents the center wavelength shift in the i-th frequency band; This represents the measured center wavelength in the i-th frequency band under high-power laser incident conditions; Indicates the target center wavelength during the design phase; The bandwidth error of each frequency band is as follows: ;in, This represents the bandwidth error of the i-th frequency band; This represents the measured bandwidth of the i-th frequency band under high-power laser incident conditions; Indicates the target bandwidth during the design phase; The stability verification vector is specifically: ; By presetting the corresponding stability verification conditions through the stability verification vector, the stability of each filter channel is verified for the first time. When the first stability verification is passed, it means that the stabilized on-chip heterogeneous filter module with spectral correction function can maintain its stability under high power laser incident. The first stability verification includes: center wavelength stability verification and bandwidth stability verification; The center wavelength stability verification specifically involves comparing the absolute value of the center wavelength drift of the channel with a preset allowable center wavelength drift threshold. When the absolute value is less than or equal to the preset allowable center wavelength drift threshold, the center wavelength of the channel is in a stable state. The bandwidth stability verification specifically involves comparing the absolute value of the channel bandwidth error with a preset allowable bandwidth error threshold. When the absolute value of the channel bandwidth error is less than or equal to the preset allowable bandwidth error threshold, the channel bandwidth error is in a stable state. It should be noted that, in this embodiment, the allowable center wavelength drift threshold is... The value range is 0.01~0.1nm; the allowable bandwidth error threshold The value range is 0.1~0.5nm; S53: Perform peak intensity enhancement ratio tests on each frequency band in the spectral output matrix, and perform a second stability verification on the spectral filtering performance based on the test results of each frequency band. Output the results after passing the second stability verification as the multi-band stable spectral filtering results that meet the requirements of high-power scenarios.

[0029] For example, in this embodiment, a strategy for obtaining the peak intensity enhancement ratio of the i-th frequency band is provided, specifically as follows: ;in, This represents the peak intensity enhancement ratio of the i-th frequency band; This represents the measured peak intensity in the i-th frequency band under high-power laser incident conditions; Indicates the reference peak intensity; Based on the spectral filtering performance after the first stability verification, a second stability verification was performed. When the peak intensity enhancement ratio of the channel is greater than or equal to the preset peak intensity enhancement ratio threshold When the output is obtained, the output will be a multi-band stable spectral filtering result that satisfies the requirements of high-power scenarios. When the peak intensity enhancement ratio of the channel is less than the preset peak intensity enhancement ratio threshold If so, then repeat step S3; It should be noted that, in this embodiment, the peak intensity enhancement ratio threshold is... The value range is 3 to 5; For example, in this embodiment, the multi-band stable spectral filtering result that satisfies the high-power scenario Specifically: .

[0030] Example 2:

[0031] This embodiment provides an electronic device, including: a processor and a memory, wherein the memory stores a computer program that can be called by the processor; The processor executes the aforementioned multi-band spectral filtering method based on on-chip heterogeneous integration by calling the computer program stored in memory.

[0032] This electronic device can vary considerably depending on its configuration or performance. It may include one or more Central Processing Units (CPUs) and one or more memories, wherein the memory stores at least one computer program, which is loaded and executed by the processor to implement the on-chip heterogeneous integration-based multi-band spectral filtering method provided in the above-described method embodiments. The electronic device may also include other components for implementing device functions; for example, it may have wired or wireless network interfaces and input / output interfaces for data input and output. Further details are omitted in this embodiment.

[0033] Example 3:

[0034] This embodiment proposes a computer-readable storage medium on which an erasable and rewritable computer program is stored. When the computer program runs on the computer device, it causes the computer device to execute the above-mentioned multi-band spectral filtering method based on on-chip heterogeneous integration.

[0035] For example, computer-readable storage media can be read-only memory (ROM), random access memory (RAM), compact disc read-only memory (CD-ROM), magnetic tape, floppy disk, and optical data storage devices.

[0036] It should be understood that in the various embodiments of this application, the order of the above-mentioned processes does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0037] It should be understood that determining B based on A does not mean determining B solely based on A; it also means determining B based on A and / or other information.

[0038] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed in this invention can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0039] In the several embodiments provided by this invention, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only one method, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0040] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0041] In addition, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0042] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0043] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of this invention is defined by the appended claims and their equivalents.

Claims

1. A multi-band spectral filtering method based on on-chip heterogeneous integration, characterized in that, The method includes: S1: The heterogeneous filter unit is partitioned to obtain the target frequency band parameter set and the candidate material parameter set. A buffer layer structure is introduced between the material interfaces to obtain the initial structure of the heterogeneous filter unit containing the interface buffer layer. S2: Input the initial structure of the heterogeneous filter unit containing the interface buffer layer into the on-chip thermal distribution simulation model to simulate the three-dimensional steady-state temperature field distribution and interface thermal stress distribution under high-power laser incident conditions, and optimize the initial structure of the heterogeneous filter unit containing the interface buffer layer to obtain the optimized initial structure of the heterogeneous filter unit. S3: The initial structure of the optimized heterogeneous filter unit is subjected to key filter area identification and temperature threshold setting, and a local micro thermal control module is embedded. At the same time, a local temperature gradient dynamic adjustment mechanism is established to obtain a stress-balanced filter module containing a local micro thermal control module. S4: Connect the stress equalization filter module to the spectral testing system, monitor the spectral measurement matrix output of each frequency band and compare it with the target spectral matrix, and at the same time calibrate the stress equalization filter module to obtain a stable on-chip heterogeneous filter module with spectral correction function. S5: Apply the stabilized on-chip heterogeneous filter module to the actual incident conditions of high-power laser, and compare the output spectral matrix with the target spectral matrix. At the same time, preset the stability verification conditions, and output the result after passing the stability verification as the multi-band stable spectral filtering result that meets the requirements of high-power scenarios.

2. The multi-band spectral filtering method based on on-chip heterogeneous integration according to claim 1, characterized in that, S1 includes: S11: Partition the on-chip heterogeneous filter unit, assign each partition to a different target frequency band, and obtain the target frequency band parameter set and the candidate material parameter set; Simultaneously, a comparison matrix is ​​constructed, and matching materials are selected based on the minimum value of the comparison matrix to obtain a preliminary matching material-frequency band comparison table; S12: Based on the preliminary matching material-frequency band lookup table, the target frequency band and candidate materials are mapped to obtain the initial partitioning layout of the heterogeneous filter unit. ; S13: Based on the initial partitioning layout of the heterogeneous filter units The stress difference between adjacent material interfaces is calculated and processed, and all partitions are traversed to obtain the stress difference matrix at the interface of each partition. S14: By using the stress difference matrix at each partition interface, a buffer layer structure is introduced between each material interface to obtain the initial structure of the heterogeneous filter unit containing the interface buffer layer.

3. The multi-band spectral filtering method based on on-chip heterogeneous integration according to claim 2, characterized in that, S2 include: S21: Input the initial structure of the heterogeneous filter unit containing the interface buffer layer into the on-chip thermal distribution simulation model, set the thermal field boundary conditions under the simulated high-power laser incident conditions, and construct the thermal field simulation boundary condition matrix. ; S22: Based on the boundary condition matrix of the thermal field simulation, perform finite element thermal distribution simulation processing, and output the simulation results as a three-dimensional steady-state temperature field distribution matrix; S23: Based on the three-dimensional steady-state temperature field distribution matrix, perform thermal stress distribution calculation to obtain the interface thermal stress distribution matrix; S24: Based on the three-dimensional steady-state temperature field distribution matrix and the interface thermal stress distribution matrix, the initial structure of the heterogeneous filter unit is optimized to obtain the optimized initial structure of the heterogeneous filter unit. .

4. The multi-band spectral filtering method based on on-chip heterogeneous integration according to claim 3, characterized in that, S3 include: S31: Perform key region identification and temperature threshold setting processing on the optimized heterogeneous filter unit initial structure to obtain the key region set and the corresponding temperature threshold vector of the key region. S32: Based on the temperature threshold vector, generate a layout scheme for local micro thermal control modules for each key region in the set of key regions, and obtain the thermal control layout matrix. The local micro thermal control module includes: an electric heating element and a thermal conduction channel.

5. The multi-band spectral filtering method based on on-chip heterogeneous integration according to claim 4, characterized in that, S3 also includes: S33: For the local micro-thermal control modules in the thermal control layout matrix, a dynamic temperature regulation model is constructed to obtain a set of dynamic regulation response functions; S34: Couple the set of dynamic adjustment response functions with the initial structure of the heterogeneous filter unit, monitor the temperature of the key area in the initial structure of the heterogeneous filter unit in real time, and dynamically adjust the temperature of the key area to obtain a stress-balanced filter module with a local micro thermal control module embedded.

6. The multi-band spectral filtering method based on on-chip heterogeneous integration according to claim 5, characterized in that, S4 include: S41: Connect the stress equalization filter module with embedded local micro thermal control module to the spectral testing system, collect the spectral output when working in each frequency band, and construct a spectral measurement matrix based on the collected spectral output; Simultaneously, the target frequency band parameter set is extracted, and the target spectral parameters are defined as the target spectral matrix; S42: Compare the spectral measurement matrix with the target spectral matrix, calculate the spectral drift error and the mapped residual stress for each frequency band, and obtain the drift error vector and the corresponding residual stress mapping matrix; S43: Based on the drift error vector and the corresponding residual stress mapping matrix, calculate the required adjustment of the thermal control module power correction for each key frequency band, and obtain the thermal control module drive power correction vector.

7. The multi-band spectral filtering method based on on-chip heterogeneous integration according to claim 6, characterized in that, S4 also includes: S44: Input the thermal control module drive power correction vector as a command to the local micro thermal control module in the stress equalization filter module, correct and verify it, and output the verification result as a stable on-chip heterogeneous filter module with spectral correction function.

8. The multi-band spectral filtering method based on on-chip heterogeneous integration according to claim 7, characterized in that, S5 include: S51: Preset high-power incident power, place the stabilized on-chip heterogeneous filter module with spectral correction function under high-power laser incident conditions for spectral testing, obtain the spectral test output of each frequency band, and construct the spectral test output results of each frequency band into a spectral output matrix.

9. The multi-band spectral filtering method based on on-chip heterogeneous integration according to claim 8, characterized in that, S5 also includes: S52: Compare the spectral output matrix with the target spectral matrix, calculate the error between the spectral output matrix and the target spectral matrix, and obtain the stability verification vector; Simultaneously, based on the stability verification vector, a stability verification condition is preset, and a first stability verification is performed according to the stability verification condition. When the first stability verification is passed, the output stabilized on-chip heterogeneous filter module maintains stability under high-power laser incident; when the first stability verification fails, step S3 is repeated. S53: Perform peak intensity enhancement ratio tests on each frequency band in the spectral output matrix, and perform a second stability verification on the spectral filtering performance based on the test results of each frequency band. Output the results after passing the second stability verification as the multi-band stable spectral filtering results that meet the requirements of high-power scenarios.

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