A wafer composite rotating device

Abstract

This invention provides a wafer recombining and rotating device to solve the problems in existing wafer carrier devices, which are difficult to install multiple wafers and cannot guarantee the consistency of wafer position adjustment and motion control, resulting in large fluctuations in inter-wafer uniformity and severely restricting the mass production yield and production cost control of high-end semiconductor devices. The wafer recombining and rotating device includes a processing tank, with a coating section and a cleaning section respectively arranged on the left and right sides of the processing tank. A wafer recombining and rotating mechanism is slidably installed between two conveyor rails in the coating and cleaning sections. The wafer recombining and rotating mechanism is used to carry ten wafers for simultaneous cleaning and metallization processing. Through a combination of rotation and revolution, the fluid distribution is optimized in space, allowing for more thorough contact between the cleaning agent and metallization solution and the wafer. It can also cooperate with a ring anode array mechanism to ensure that every point on the wafer surface experiences various electric field conditions.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and in particular to a wafer composite rotation device. Background Technology

[0002] In the field of semiconductor manufacturing equipment technology, the precision positioning and motion control system of wafers is a key technological bottleneck to ensure the consistency of advanced process technologies. As semiconductor technology advances towards the nanometer scale and even more advanced processes, extremely stringent requirements are placed on the positioning accuracy, motion control stability, and multi-station coordination of wafer carrier devices.

[0003] In the prior art, such as the invention patent with publication number CN120330845A, the liquid circulation heating wafer electroplating equipment, although attempting to improve process performance by improving the liquid circulation and stirring mechanism, still has the following limitations in wafer position adjustment and motion control, and cannot meet the requirements of advanced semiconductor manufacturing:

[0004] 1. Lack of wafer radial position adjustment function: The traditional fixture is used to fix the wafer. The wafer clamping mechanism lacks positioning adjustment function, which makes it difficult to adjust and position the wafer at different radial positions. This leads to the position deviation between the wafer and the anode during the metallization process, which cannot match the electric field distribution and affects the uniformity of wafer metallization.

[0005] 2. Lack of wafer circumferential autonomous motion control function: The traditional fixtures used in this technology can only enable the wafer to perform simple translational movements. With the addition of simple mechanical stirring, it can only provide limited flow field improvement for wafer cleaning and metallization coating. It cannot meet the flow rate and force of wafer cleaning, and it cannot fully experience different flow field conditions at each point on the wafer surface during the wafer metallization coating process. It lacks a fundamental solution for the inherent non-uniform flow field mode.

[0006] 3. Lack of conditions for multi-station synchronous processing: Although this technology attempts to process two wafers simultaneously, it uses a traditional fixture fixing mode and lacks an effective multi-station collaborative control mechanism, making it difficult to ensure the consistency of the process between multiple wafers. This results in large differences in uniformity between wafers, making it difficult to apply to batch processing and unable to meet the high throughput requirements of modern semiconductor manufacturing lines.

[0007] 4. Inconsistent process integration: The cleaning pretreatment and metallization coating processes are carried out separately in this technology. The transfer of wafers between different devices increases the risk of secondary contamination and mechanical damage, affecting the overall process efficiency and quality stability. Summary of the Invention

[0008] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a wafer composite rotation device to solve the problems in the prior art where wafer carrier devices are difficult to install multiple wafers and cannot guarantee the consistency of position adjustment and motion control of multiple wafers, resulting in large fluctuations in inter-wafer uniformity, which seriously restricts the mass production yield and production cost control of high-end semiconductor devices.

[0009] To achieve the above and other related objectives, the present invention provides a wafer composite rotation device, comprising: a processing tank, wherein a coating section and a cleaning section are respectively provided on the left and right sides of the processing tank; two parallel conveying guides are arranged on the upper part of the coating section and the cleaning section; two liquid injection pipes are symmetrically arranged in the lower part of the coating section; an annular anode array mechanism is installed on the front part of the coating section; ten jet pipes are equidistantly installed on the front part of the cleaning section; and a liquid injection pipe is arranged on the inner side of the rear wall of the lower part of the cleaning section; and a wafer composite rotation mechanism is slidably installed between the two conveying guides of the coating section and the cleaning section.

[0010] The cleaning section is used to clean and remove impurities and contaminants from the surface of the wafer before the wafer coating process.

[0011] The coating section is used to deposit a metal layer on the wafer surface;

[0012] The annular anode array mechanism is used to control the current density distribution in different regions in segments.

[0013] The wafer composite rotation mechanism is used to carry ten wafers to perform cleaning and metallization processes simultaneously. Through the composite motion of rotation and revolution, the fluid distribution in space is optimized, so that the cleaning agent and metallization liquid can come into full contact with the wafer. It can also cooperate with the annular anode array mechanism to ensure that every point on the wafer surface experiences various electric field conditions.

[0014] Optionally, the annular anode array mechanism includes an anode mounting plate, anode conductive copper busbars, fixing blocks, arc-shaped anode blocks, and connecting plates. An anode mounting plate is installed at the front of the coated section. Five anode conductive copper busbars are equidistantly installed on the upper outer side of the anode mounting plate and the inner side of the rear wall of the coated section. Ten fixing blocks are equidistantly fixed in a circular shape on the rear wall of the anode mounting plate. Arc-shaped anode blocks are fixed between each pair of fixing blocks. Connecting plates are provided around each arc-shaped anode block, and the anode conductive copper busbars are electrically connected to the connecting plates one by one through connectors.

[0015] Optionally, the wafer composite rotation mechanism includes a carrier frame, sliders, positioning base frames, cylindrical nested frames, support seats, a primary power shaft, a driving helical gear, a central shaft, a driven helical gear, and a single-piece rotary drive gear. Two carrier frames are movably arranged above each pair of conveying rails. Sliders are fixed to the lower front and rear walls of each carrier frame. The two front sliders are slidably installed within the front conveying rail, and the two rear sliders are slidably installed within the rear conveying rail. Positioning base frames are bolted to the rear of the two carrier frames. A cylindrical nested frame is installed in the middle of the positioning base frame. A support seat is fixed to the inner side of the rear wall of the cylindrical nested frame. A primary power shaft is rotatably installed between the support seats. A driving helical gear is fixedly sleeved on the outer wall of the primary power shaft. A driven helical gear is meshed with the upper part of the driving helical gear. A central shaft is fixed to the middle of the driven helical gear. A single-piece rotary drive gear is fixedly sleeved on the outer wall of the front end of the central shaft.

[0016] Optionally, the wafer composite rotation mechanism further includes a rotary base, a secondary power shaft, a driving spur gear, a driven spur gear, a sleeve, a positioning base, a decagonal bracket, a retaining shaft, a circumferential rotation transition gear, a telescopic cylinder, a single-piece rotating driven gear, and a wafer electroplating carrier. The rotary base is fixed inside the cylindrical nested frame. The secondary power shaft is rotatably mounted on the rotary base. A driving spur gear is fixedly sleeved on the outer wall of the front end of the secondary power shaft. A driven spur gear is meshed with the left outer wall of the driving spur gear. A sleeve is fixed to the inner wall of the driven spur gear. A positioning base is fixed inside the positioning base, and the sleeve... The sleeve is rotatably mounted on the lower part of the positioning base. A decagonal bracket is fixedly mounted on the outer wall of the front end of the sleeve. A retaining shaft is rotatably mounted on the middle of each of the ten outer sides of the decagonal bracket. A circumferential rotating transition gear is fixedly sleeved on the outer wall of the front end of each retaining shaft. A telescopic cylinder is fixed on each of the ten corners of the decagonal bracket. A single-piece rotating driven gear is rotatably mounted on the outer end of each of the ten telescopic cylinders through a bearing. A wafer electroplating carrier is mounted on the front wall of the single-piece rotating driven gear through an annular connector. A wafer is loaded in the wafer electroplating carrier, and the power cathode is electrically connected to the wafer through an edge contact mechanism.

[0017] Optionally, a drive motor is installed at the input end of both the primary and secondary power shafts. The decagonal bracket is formed by a decagonal outer frame and ten connecting rods, and the outer and inner ends of the connecting rods are respectively fixedly connected to the corner of the decagonal outer frame and the outer wall of the sleeve.

[0018] Optionally, the central shaft passes through the sleeve, and the central shaft and the sleeve are rotatably connected, and the inner sides of the ten circumferential rotating transition gears are all meshed with a single rotary drive gear.

[0019] Optionally, the single-piece rotary driven gear and the circumferential rotary transition gear are spaced apart, and the single-piece rotary driven gear and the circumferential rotary transition gear are intermittently meshed.

[0020] Optionally, the arc-shaped anode blocks are fan-shaped when viewed from the front, and the circle formed by the ten arc-shaped anode blocks and the fixed block vertically covers the circumferential rotation trajectory of the ten wafer electroplating carriers, and the jet range formed by the jet nozzles of the ten jet pipes vertically covers the circumferential rotation path of the ten wafer electroplating carriers.

[0021] As described above, the wafer composite rotation device of the present invention has at least the following beneficial effects:

[0022] 1. By setting up a coating section and a cleaning section on the left and right sides of the processing tank respectively, the wafer cleaning and coating processes can be realized in one piece of equipment, reducing wafer handling time and keeping the wafer in the same closed environment throughout the entire process, avoiding secondary contamination, which is conducive to improving the production efficiency of wafer processing. It solves the problems of secondary contamination and mechanical wafer damage caused by the lack of continuity in the existing technology process and the separation of cleaning pretreatment and metallization coating processes.

[0023] 2. The decagonal support design allows for the simultaneous loading of ten wafers for metallization processing, enabling synchronous processing at multiple workstations and ensuring process consistency between multiple wafers, thus meeting the high capacity requirements of semiconductor manufacturing lines.

[0024] 3. The design of the telescopic cylinder can adjust the relative position of the wafer plating carrier, the arc-shaped anode block, and the jet nozzle to adapt to different currents and cleaning requirements, and make fine adjustments to the wafer according to processing needs, which is highly flexible.

[0025] 4. The wafer rotation mechanism, which works in conjunction with the annular anode array mechanism, eliminates circumferential metallization asymmetry caused by the fixed clamping points and edge contact points of traditional fixtures. This ensures that all points on the circumference of the wafer experience the same process conditions, improving the circumferential uniformity of wafer metallization and avoiding local over-plating or under-plating defects. Furthermore, the centrifugal force of the rotation promotes the renewal of the processing solution, reduces the thickness of the diffusion layer, and prevents directional pattern deposition caused by the fixed direction of the liquid flow. This solves the problem of existing technologies using traditional fixtures to fix the wafer, which lacks the function of wafer radial position adjustment, leading to positional deviation between the wafer and the anode during the metallization process, resulting in mismatch of electric field distribution, affecting the uniformity of wafer metallization, and causing "edge effects."

[0026] 5. Through the revolution of the wafer composite rotation mechanism, in the cleaning section, each wafer periodically passes through the spray area of ​​ten jet pipes, ensuring that all points on the wafer surface experience uniform fluid impact, avoiding cleaning blind spots, and ensuring the consistency of cleaning effect under batch processing conditions; in the coating section, each wafer can periodically pass through different flow field areas within the coating section, and each point on the wafer surface can sequentially pass through different sections of the annular anode, experiencing the differentiated electric field distribution generated by different anode sections, so as to average the spatial flow field and electric field, resulting in strong consistency and small differences among wafers processed in the same batch for metallization, which is suitable for mass production, significantly improves production efficiency, and can match the high throughput requirements of semiconductor manufacturing lines. It solves the problem that the existing technology can only make the wafer perform simple translational movements, with single motion control, unable to realize complex motion modes, and cannot meet the flow rate and force of wafer cleaning, and cannot fully experience different flow field conditions at each point on the wafer surface during the wafer metallization coating process;

[0027] 6. Through the composite rotation of the wafer composite rotation mechanism, every point on the wafer surface can periodically experience various flow fields and electric field conditions. The time averaging effect is used to eliminate spatial non-uniformity. The synchronous composite rotation of ten stations ensures that all wafers experience the same motion history and process environment, providing a foundation for high-throughput mass production. The precisely controlled composite motion mode actively optimizes the distribution of cleaning agents, the exchange of electroplating solutions, and the effect of electric fields, thereby improving the overall process effect and product quality from a mechanical perspective. Attached Figure Description

[0028] Figure 1 The image shown is a perspective view of the overall structure of the invention from a southeast angle.

[0029] Figure 2 The diagram shows the relative positions of the annular anode array mechanism and the wafer composite rotation mechanism of this invention.

[0030] Figure 3 The diagram shows the relative positions of the arc-shaped anode block and the wafer electroplating carrier of the present invention.

[0031] Figure 4 The image shown is a rear view of the structure of the arc-shaped anode block and the fixing block of the present invention.

[0032] Figure 5 The image shown is a southeast-view perspective view of the wafer composite rotation mechanism of the present invention.

[0033] Figure 6 This is a northeast-view perspective perspective view showing the transmission relationship between the helical gear and the single-piece rotary drive gear of the present invention.

[0034] Figure 7 This is a southwest-view perspective perspective view showing the transmission relationship between the helical gear and the single-piece rotary drive gear of the present invention.

[0035] Figure 8 The image shown is a northeast-view perspective perspective of the transmission relationship between the spur gear and the wafer electroplating carrier of the present invention.

[0036] Figure 9 This is a southwest perspective perspective view showing the transmission relationship between the spur gear and the wafer electroplating carrier of the present invention.

[0037] Figure 10 The image shown is a southeast-view perspective view of the wafer composite rotation mechanism of the present invention.

[0038] Figure 11 The image shown is a perspective view from the northeast of the present invention, depicting the wafer composite rotation mechanism.

[0039] Figure 12 The diagram shown is a left-side view of the wafer composite rotation mechanism of the present invention.

[0040] Figure 13 The diagram shown is a rear view of the wafer composite rotation mechanism of the present invention.

[0041] Component designation explanation

[0042] 1. Processing tank; 101. Coating section; 102. Cleaning section; 103. Conveying guide rail; 104. Injection pipe; 105. Spray pipe;

[0043] 2. Annular anode array mechanism; 201. Anode mounting plate; 202. Anode conductive copper busbar; 203. Fixing block; 204. Arc-shaped anode block; 205. Connecting plate;

[0044] 3. Wafer composite rotation mechanism; 301. Bearing frame; 302. Slider; 303. Positioning base; 304. Cylindrical nested frame; 305. Support base; 306. Primary drive shaft; 307. Driving helical gear; 308. Central shaft; 309. Driven helical gear; 310. Single-piece rotary drive gear; 311. Rotary seat; 312. Secondary drive shaft; 313. Driving spur gear; 314. Driven spur gear; 315. Sleeve; 316. Positioning base; 317. Decagonal bracket; 318. Locking shaft; 319. Circumferential rotation transition gear; 320. Telescopic cylinder; 321. Single-piece rotary driven gear; 322. Wafer electroplating carrier. Detailed Implementation

[0045] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0046] As described in the background section, in the field of semiconductor manufacturing equipment technology, such as the invention patent with publication number CN120330845A, the liquid-circulating heating wafer electroplating equipment, although attempting to improve process performance by improving the liquid circulation and stirring mechanism, still has the following limitations in wafer position adjustment and motion control, failing to meet the requirements of advanced semiconductor manufacturing: 1. Lack of wafer radial position adjustment function: Using traditional fixtures to fix the wafer, the wafer clamping mechanism lacks positioning adjustment function, making it difficult to adjust and position the wafer at different radial positions, resulting in positional deviation between the wafer and the anode during metallization, failing to match the electric field distribution, and affecting the uniformity of wafer metallization; 2. 1. Lack of wafer circumferential autonomous motion control: The traditional fixtures used in this technology can only enable simple translational movement of the wafer, coupled with simple mechanical stirring. This only provides limited flow field improvement for wafer cleaning and metallization coating, and cannot meet the flow rate and force requirements for wafer cleaning. Furthermore, it cannot ensure that each point on the wafer surface fully experiences different flow field conditions during the wafer metallization coating process, and lacks a fundamental solution for the inherent non-uniform flow field mode. 2. Lack of conditions for multi-station synchronous processing: Although this technology attempts to process two wafers simultaneously, due to its traditional fixture fixing mode and lack of an effective multi-station collaborative control mechanism, it is difficult to ensure the consistency of the process between multiple wafers. This leads to large differences in uniformity between wafers, making it difficult to apply to batch processing and unable to meet the high throughput requirements of modern semiconductor manufacturing lines. 3. Inconsistent process integration: The cleaning pretreatment and metallization coating processes are performed separately in this technology. The transfer of wafers between different equipment increases the risk of secondary contamination and mechanical damage, affecting the overall process efficiency and quality stability. Example 1

[0047] Please see Figure 1 To address the issues of secondary contamination and mechanical wafer damage caused by the disconnected processes in existing technologies, where cleaning pretreatment and metallization coating are performed separately, this invention provides a wafer composite rotation device, comprising: a processing tank 1, with a coating section 101 and a cleaning section 102 respectively arranged on the left and right sides of the processing tank 1; two parallel conveying guides 103 arranged on the upper part of the coating section 101 and the cleaning section 102; two injection pipes 104 symmetrically arranged in the lower part of the coating section 101; a ring anode array mechanism 2 installed at the front of the coating section 101; ten jet pipes 105 equidistantly installed at the front of the cleaning section 102; and an injection pipe 104 arranged on the inner side of the rear wall of the lower part of the cleaning section 102; and a wafer composite rotation mechanism 3 slidably installed between the two conveying guides 103 of the coating section 101 and the cleaning section 102.

[0048] Specifically, in use, before wafer metallization, the wafer is mounted on the wafer reassembly and rotation mechanism 3. The wafer reassembly and rotation mechanism 3 first carries the wafer into the cleaning section 102. The cleaning section 102 injects cleaning fluid through the rear injection pipe 104, and simultaneously sprays the wafer surface with the front spray pipe 105, effectively removing impurities from the wafer surface. After cleaning, the conveying device immediately transfers the wafer reassembly and rotation mechanism 3 to the coating section 101, where the two injection pipes 104 inject metallization treatment fluid. In section 01, two symmetrically arranged injection pipes 104 create a relatively uniform liquid flow distribution in the lower part of the coating section 101. The wafer composite rotation mechanism 3 slides and translates from right to left on two conveying guide rails 103, which can move the wafer to the opposite side of the annular anode array mechanism 2 for wafer metallization processing. In this way, the wafer cleaning and coating processes can be realized in one device, reducing wafer handling time and keeping the wafer in the same closed environment throughout the entire process, avoiding secondary contamination and improving the production efficiency of wafer processing. Example 2

[0049] Please see Figures 1-4 and Figures 5-13 To address the problem that existing technologies using traditional wafer mounting fixtures lack radial position adjustment capabilities, leading to wafer misalignment with the anode during metallization, mismatched electric field distribution, and resulting in uneven wafer metallization and an "edge effect," this invention provides a wafer composite rotation device. The device further includes a wafer composite rotation mechanism 3, comprising a support frame 301, sliders 302, a positioning base 303, a cylindrical nested frame 304, a support base 305, a primary drive shaft 306, a driving helical gear 307, a central shaft 308, a driven helical gear 309, and a single-piece rotation drive gear 310. Two support frames 301 are movably mounted above two conveying rails 103. Sliders 302 are fixed to the lower front and rear walls of each support frame 301, with the two front sliders 302 slidably mounted within the front conveying rail 103. Two rear sliders 302 are slidably mounted in the rear conveyor rail 103. A positioning base 303 is bolted to the rear of the two support frames 301. A cylindrical nested frame 304 is mounted in the middle of the positioning base 303. A support seat 305 is fixed to the inner side of the rear wall of the cylindrical nested frame 304. A primary power shaft 306 is rotatably mounted between the support seats 305. A driving helical gear 307 is fixedly sleeved on the outer wall of the primary power shaft 306. A driven helical gear 309 is meshed with the upper part of the driving helical gear 307. A central shaft 308 is fixed in the middle of the driven helical gear 309. A single-piece rotary drive gear 310 is fixedly sleeved on the outer wall of the front end of the central shaft 308. The primary power shaft 306 is rotated by a drive motor, which can make the driving helical gear 307 move in tandem with the driven helical gear 309, thereby driving the central shaft 308 and the single-piece rotary drive gear 310 to rotate.

[0050] More comprehensively, such as Figures 8-13 As shown, the wafer composite rotation mechanism 3 also includes a sleeve 315, a positioning base 316, a decagonal bracket 317, a retaining shaft 318, a circumferential rotation transition gear 319, a telescopic cylinder 320, a single-piece rotating driven gear 321, and a wafer electroplating carrier 322. The positioning base 316 is fixed inside the positioning base 303. The sleeve 315 is rotatably mounted on the lower part of the positioning base 316. The decagonal bracket 317 is fixedly mounted on the outer wall of the front end of the sleeve 315. Retaining shafts 318 are rotatably mounted on the middle of each of the ten outer edges of the decagonal bracket 317. Circumferential rotation transition gears 319 are fixedly sleeved on the outer wall of the front end of each retaining shaft 318. Ten telescopic cylinders 320 are fixed to each of the ten corners of the decagonal bracket 317. The outer ends of the ten telescopic cylinders 320 are rotatably mounted with single-piece rotating driven gears 321 via bearings. A wafer electroplating carrier 322 is mounted on the front wall of the single-piece rotating driven gear 321 via an annular connector. The wafer electroplating carrier 322 contains a wafer, and the power cathode is electrically connected to the wafer via an edge contact mechanism. The single-piece rotating drive gear 310 meshes with the ten circumferential rotating transition gears 319, which can drive the single-piece rotating driven gear 321 to engage, thereby driving the wafer electroplating carrier 322 to drive the wafer to rotate.

[0051] More comprehensively, such as Figures 1-4 As shown, the annular anode array mechanism 2 is used to control the current density distribution on the wafer surface and reduce the current in the anode segments corresponding to the edges. The annular anode array mechanism 2 includes an anode mounting plate 201, anode conductive copper busbars 202, a fixing block 203, an arc-shaped anode block 204, and a connecting plate 205. The anode mounting plate 201 is installed at the front of the processing tank 1. Five anode conductive copper busbars 202 are equidistantly installed on the upper outer side of the anode mounting plate 201 and the inner side of the rear wall of the processing tank 1. The rear wall is fixed with ten fixed blocks 203 at equal intervals in a circular shape. An arc-shaped anode block 204 is fixed between each pair of fixed blocks 203. A connecting plate 205 is provided around each arc-shaped anode block 204. The anode conductive copper busbar 202 is electrically connected to the connecting plate 205 through a connector. Each arc-shaped anode block 204 is connected to the anode conductive copper busbar 202 through the connecting plate 205, which can realize segmented independent control. Through the ten independent arc-shaped anode blocks 204, the current output of each anode block can be adjusted independently.

[0052] More comprehensively, such as Figures 11-13As shown, the central shaft 308 passes through the sleeve 315, and the central shaft 308 and the sleeve 315 are rotatably connected, ensuring that the rotation of the central shaft 308 and the sleeve 315 does not interfere with each other. The inner sides of the ten circumferential rotating transition gears 319 are all meshed with the single-piece rotating drive gear 310, so that the ten circumferential rotating transition gears 319 can use the single-piece rotating drive gear 310 as the rotation reference, ensuring the synchronization of rotation.

[0053] More comprehensively, such as Figure 13 As shown, the single-piece rotating driven gear 321 and the circumferential rotating transition gear 319 are spaced apart, and the adjacent single-piece rotating driven gear 321 and the circumferential rotating transition gear 319 are intermittently meshed, so that the single-piece rotating driven gear 321 can mesh with the circumferential rotating transition gear 319 to rotate the wafer according to the metallization requirements, or it can stop rotating to perform static metallization processing of the single wafer.

[0054] Optionally, the arc-shaped anode blocks 204 are fan-shaped when viewed from the front, and the circle formed by the ten arc-shaped anode blocks 204 and the fixed block 203 vertically covers the circumferential rotation trajectory of the ten wafer plating carriers 322, so that each fan-shaped anode block corresponds to the area of ​​the wafer circumference. The current of the corresponding anode segment can be adjusted in real time according to the position of the wafer during the revolution. When the wafer rotates, it can smoothly transition to the adjacent anode segment, avoiding electric field interruption or sudden change, so as to precisely control the electric field and avoid edge effects. The jet range formed by the jet nozzles of the ten jet pipes 105 vertically covers the circumferential rotation path of the ten wafer plating carriers 322, ensuring that each wafer can obtain consistent fluid impact at any position on the rotation path when the wafer composite rotation mechanism 3 is in revolution, providing equal cleaning conditions for the synchronous batch processing of ten wafers.

[0055] Specifically, in use, the decagonal bracket 317 design allows for the simultaneous loading of ten wafers for metallization processing. The equidistant positioning of the decagonal bracket 317 and the synchronous transmission of the ten circumferential rotating transition gears 319 ensure that the ten wafers maintain consistency during movement. The single-piece rotating drive gear 310 serves as a unified rotation reference and can transmit motion synchronously to each workstation through the ten circumferential rotating transition gears 319. Each wafer electroplating carrier 322 electrically connects the power cathode to the wafer through an edge contact mechanism, ensuring that each wafer receives a stable cathode current. Thus, ten wafers can be processed simultaneously, enabling synchronous processing at multiple workstations and ensuring process consistency between multiple wafers, meeting the high capacity requirements of semiconductor manufacturing lines.

[0056] In addition, the telescopic cylinder 320 can adjust the relative position of the wafer electroplating carrier 322, the arc-shaped anode block 204, and the nozzle of the jet pipe 105 to adapt to different currents and cleaning requirements, and make fine adjustments to the wafer according to processing needs, which is highly flexible.

[0057] During the metallization process of the wafer, each arc-shaped anode block 204 is connected to the anode conductive copper busbar 202 via a connecting plate 205, enabling segmented independent control. With ten independent arc-shaped anode blocks 204, each anode block can independently adjust its current output. If the metal layer at a certain wafer edge is too thick, the current output can be reduced first for the corresponding anode segment. Then, the telescopic cylinder 320 at that location is activated, causing its outer end to slide back, allowing the single-piece rotating driven gear 321 to mesh with the circumferential rotating transition gear 319. Subsequently, the drive motor rotates the primary power shaft 306, which in turn activates the driving helical gear 307, meshing with the driven helical gear 309 to drive the central shaft 308 and the single-piece rotating drive gear. 310 rotates, and the single-piece rotating drive gear 310 meshes with ten circumferential rotating transition gears 319, driving the single-piece rotating driven gear 321 to mesh, thereby driving the wafer electroplating carrier 322 to rotate the wafer, transferring the excessively thick metal portion of the wafer away from the high-current area. In this way, in conjunction with the electric field control of the annular anode array mechanism 2, the circumferential metallization asymmetry caused by the fixed clamping points and edge contact points of traditional fixtures is eliminated, ensuring that all points in the circumferential direction of the wafer experience the same process conditions, improving the circumferential uniformity of wafer metallization processing, and avoiding the generation of local over-plating or under-plating defects; moreover, the centrifugal force of the rotation can promote the renewal of the processing solution, reduce the thickness of the diffusion layer, and prevent the deposition of directional patterns caused by the fixed liquid flow direction. Example 3

[0058] Please see Figures 8-13 To address the limitations of existing technologies, which only enable simple translational movements of wafers, have limited motion control, and cannot achieve complex motion modes, thus failing to meet the required flow rate and force for wafer cleaning and ensuring sufficient experience of different flow field conditions at various points on the wafer surface during the wafer metallization coating process, this invention provides a wafer composite rotation device. The device further includes a wafer composite rotation mechanism 3, which includes a rotating base 311, a secondary drive shaft 312, a driving spur gear 313, and a driven spur gear 314. A cylindrical nested frame 304 is internally fixed... A rotating base 311 is fixed, on which a secondary power shaft 312 is rotatably mounted. A driving spur gear 313 is fixedly sleeved on the outer wall of the front end of the secondary power shaft 312. A driven spur gear 314 is meshed with the outer wall of the left side of the driving spur gear 313. The inner wall of the driven spur gear 314 is fixed with the sleeve 315. The secondary power shaft 312 is started to rotate, so that the driving spur gear 313 and the driven spur gear 314 mesh and drive each other, driving the sleeve 315 and the decagonal bracket 317 to rotate as a whole, which can realize the revolution of ten wafer electroplating carriers 322.

[0059] More comprehensively, such as Figures 11-13As shown, drive motors are installed at the input ends of both the primary drive shaft 306 and the secondary drive shaft 312. The independent dual-axis drive ensures the independence of the rotational motion and the revolution motion. The decagonal bracket 317 is fixed by a decagonal outer frame and ten connecting rods. The outer and inner ends of the connecting rods are fixedly connected to the bends of the decagonal outer frame and the outer wall of the sleeve 315, respectively. The decagonal outer frame provides precise 36-degree equal positioning for the ten wafer stations. The connecting rods have a triangular stable structure to avoid vibration and deformation during revolution. The sleeve 315 ensures that the torque is evenly transmitted from the center to the surrounding area.

[0060] Specifically, in use, the drive motor rotates the secondary power shaft 312, causing the active spur gear 313 and the driven spur gear 314 to mesh and drive each other, thereby rotating the sleeve 315 and the decagonal support 317 as a whole. This enables the ten wafer plating carriers 322 to revolve. In the cleaning section 102, this revolve motion allows each wafer to periodically pass through the spray areas of the ten spray pipes 105, ensuring that each point on the wafer surface experiences uniform fluid impact, avoiding cleaning blind spots, and ensuring the consistency of cleaning effect under batch processing conditions. In the coating section 101, each wafer can periodically pass through different flow field areas within the coating section 101. Each point on the wafer surface can sequentially pass through different sections of the annular anode, experiencing the differentiated electric field distribution generated by different anode sections. This averages out the spatial flow field and electric field, resulting in strong consistency and small differences among wafers metallized in the same batch. This is suitable for mass production, significantly improving production efficiency and matching the high throughput requirements of semiconductor manufacturing lines.

[0061] By simultaneously rotating the primary power shaft 306 and the secondary power shaft 312, the ten wafer electroplating carriers 322 achieve both revolution and rotation. This composite rotation ensures that each point on the wafer surface experiences high-speed flow, low-speed flow, near-filling zone, and far-filling zone. Time averaging eliminates spatial flow field inhomogeneity. Furthermore, the passage of the wafer agitates the fluid, which to some extent avoids differences in ion concentration in the processing liquid caused by local dead zones or eddies. The fluid shear force effectively removes fine contaminants from the wafer surface, thereby improving flow field uniformity, reducing defect density, achieving uniform metal layer deposition thickness, and high deposition quality. This solves the problem of flow field and electric field inhomogeneity through spatiotemporal averaging.

[0062] Although the present invention has been described in detail above with general descriptions and specific embodiments, modifications or improvements can be made to it, which will be obvious to those skilled in the art. Therefore, all such modifications or improvements made without departing from the spirit of the present invention fall within the scope of protection claimed by the present invention.

Claims

1. A wafer composite rotation device, characterized in that, include: The processing tank (1) has a coating section (101) and a cleaning section (102) on its left and right sides, respectively. Two conveying guides (103) are arranged parallel to each other on the upper part of the coating section (101) and the cleaning section (102). Two injection pipes (104) are symmetrically arranged in the lower part of the coating section (101). A ring anode array mechanism (2) is installed in the front part of the coating section (101). Ten jet pipes (105) are installed at equal intervals in the front part of the cleaning section (102). An injection pipe (104) is arranged on the inner side of the rear wall of the lower part of the cleaning section (102). A wafer composite rotation mechanism (3) is slidably installed between the two conveying guides (103) of the coating section (101) and the cleaning section (102). The cleaning section (102) is used to clean and remove impurities and contaminants from the surface of the wafer before the wafer coating process. The coating section (101) is used to deposit a metal layer on the wafer surface; The annular anode array mechanism (2) is used to control the current density distribution in different regions in segments. The wafer composite rotation mechanism (3) is used to carry ten wafers to perform cleaning and metallization processing simultaneously. Through the composite motion of rotation and revolution, the fluid distribution is optimized in space, so that the cleaning agent and metallization liquid can come into full contact with the wafer. It can also cooperate with the annular anode array mechanism (2) so that every point on the wafer surface experiences various electric field conditions.

2. The wafer composite rotation device according to claim 1, characterized in that: The annular anode array mechanism (2) includes an anode mounting plate (201), an anode conductive copper busbar (202), a fixing block (203), an arc-shaped anode block (204), and a connecting plate (205). The anode mounting plate (201) is installed at the front of the coated section (101). Five anode conductive copper busbars (202) are installed at equal intervals on the upper outer side of the anode mounting plate (201) and the inner side of the rear wall of the coated section (101). Ten fixing blocks (203) are fixed at equal intervals in a circular shape on the rear wall of the anode mounting plate (201). An arc-shaped anode block (204) is fixed between each pair of fixing blocks (203). A connecting plate (205) is provided around each arc-shaped anode block (204). The anode conductive copper busbars (202) are electrically connected to the connecting plate (205) one by one through connectors.

3. The wafer composite rotation device according to claim 2, characterized in that: The wafer composite rotation mechanism (3) includes a support frame (301), a slider (302), a positioning base frame (303), a cylindrical nested frame (304), a support base (305), a primary power shaft (306), a driving helical gear (307), a central shaft (308), a driven helical gear (309), and a single-piece rotary drive gear (310). Two support frames (301) are movably arranged above each pair of conveying guide rails (103). Slider blocks (302) are fixed to the lower front and rear walls of each support frame (301). The two front sliders (302) are slidably installed within the front conveying guide rail (103), and the two rear sliders (302) are slidably installed within the rear conveying guide rail (103). A positioning base frame (303) is bolted to the rear of the two bearing frames (301). A cylindrical nested frame (304) is installed in the middle of the positioning base frame (303). A support seat (305) is fixed to the inner side of the rear wall of the cylindrical nested frame (304). A primary power shaft (306) is rotatably installed between the support seats (305). A driving helical gear (307) is fixedly sleeved on the outer wall of the primary power shaft (306). A driven helical gear (309) is meshed on the upper part of the driving helical gear (307). A central shaft (308) is fixed in the middle of the driven helical gear (309). A single-piece rotary drive gear (310) is fixedly sleeved on the outer wall of the front end of the central shaft (308).

4. The wafer composite rotation device according to claim 3, characterized in that: The wafer composite rotation mechanism (3) further includes a rotary base (311), a secondary power shaft (312), a driving spur gear (313), a driven spur gear (314), a sleeve (315), a positioning base (316), a decagonal bracket (317), a retaining shaft (318), a circumferential rotation transition gear (319), a telescopic cylinder (320), a single-piece rotating driven gear (321), and a wafer electroplating carrier (322). The rotary base (311) is fixed inside the cylindrical nested frame (304). The secondary power shaft (312) is rotatably mounted on the rotary base (311). The driving spur gear (313) is fixedly sleeved on the outer wall of the front end of the secondary power shaft (312). The driven spur gear (314) is meshed with the outer wall of the left part of the driving spur gear (313). The sleeve (315) is fixed on the inner wall of the driven spur gear (314). The positioning base... (303) A positioning base (316) is fixed inside, and a sleeve (315) is rotatably installed on the lower part of the positioning base (316). A decagonal bracket (317) is fixedly installed on the outer wall of the front end of the sleeve (315). A retaining pin (318) is rotatably installed in the middle of the ten outer sides of the decagonal bracket (317). A circumferential rotating transition gear (319) is fixedly sleeved on the outer wall of the front end of the retaining pin (318). A telescopic cylinder (320) is fixed on the ten corners of the decagonal bracket (317). A single-piece rotating driven gear (321) is rotatably installed on the outer end of each of the ten telescopic cylinders (320) through a bearing. A wafer electroplating carrier (322) is installed on the front wall of the single-piece rotating driven gear (321) through an annular connector. A wafer is loaded in the wafer electroplating carrier (322), and the power cathode is electrically connected to the wafer through an edge contact mechanism.

5. The wafer composite rotation device according to claim 4, characterized in that: The input ends of the primary power shaft (306) and the secondary power shaft (312) are both equipped with drive motors. The decagonal bracket (317) is formed by a decagonal outer frame and ten connecting rods, and the outer and inner ends of the connecting rods are respectively fixedly connected to the corner of the decagonal outer frame and the outer wall of the sleeve (315).

6. The wafer composite rotation device according to claim 4, characterized in that: The central shaft (308) passes through the sleeve (315) and is rotatably connected to the sleeve (315). The inner sides of the ten circumferential rotating transition gears (319) are all meshed with the single-piece rotating drive gear (310).

7. The wafer composite rotation device according to claim 6, characterized in that: The single-piece rotating driven gear (321) and the circumferential rotating transition gear (319) are spaced apart, and the single-piece rotating driven gear (321) and the circumferential rotating transition gear (319) that are adjacent in position are intermittently meshed.

8. The wafer composite rotation device according to claim 7, characterized in that: The arc-shaped anode block (204) is fan-shaped when viewed from the front, and the circle formed by the ten arc-shaped anode blocks (204) and the fixed block (203) vertically covers the circumferential rotation trajectory of the ten wafer electroplating carriers (322). The jet range formed by the jet nozzles of the ten jet pipes (105) vertically covers the circumferential rotation path of the ten wafer electroplating carriers (322).

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