A flow guide ring and a chemical vapor deposition apparatus

Abstract

The application discloses a flow guide ring and a chemical vapor deposition device, and the device comprises a reaction cavity, a gas supply assembly and a flow guide ring. The reaction cavity comprises a top cover, and the top cover is provided with a top cover opening in the center; the gas supply assembly comprises a gas transmission part and a nozzle assembly; a cleaning gas inlet channel is arranged between the gas transmission part and the top cover opening; the flow guide ring is arranged around the gas supply assembly below the top cover, and a ventilation groove in the vertical direction is arranged on the inner circumferential side wall of the flow guide ring, and the ventilation groove is communicated with the cleaning gas inlet channel; along the circumferential direction of the gas supply assembly, the ventilation groove and the nozzle assembly are staggered with each other. The chemical vapor deposition device of the application realizes effective cleaning of the deposits below the nozzle assembly by arranging the ventilation groove on the flow guide ring, making the cleaning gas flow into the ventilation groove through the cleaning gas inlet channel, and making the cleaning gas continue to move downward along the original direction after flowing out of the ventilation groove, so that the cleaning gas is prevented from being pushed away from the nozzle assembly by the horizontally sprayed gas in the nozzle assembly.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing equipment, in particular to a flow guide ring and a chemical vapor deposition device. BACKGROUND

[0002] In the semiconductor manufacturing equipment, during the processing of the wafer, deposits are formed inside the reaction chamber. Chlorine or other cleaning gas is used to clean the inside of the reaction chamber to remove the deposits between the process.

[0003] The plurality of nozzles of the sidewall of the gas supply assembly in the reaction chamber are arranged in the vertical direction. The cleaning gas is difficult to reach the bottom of the sidewall of the gas supply assembly after entering the reaction chamber from above the gas supply assembly, so that the deposits on the surface of the gas supply assembly cannot be completely removed, especially the deposits at the bottom of the sidewall of the gas supply assembly. The remaining deposits may fall off during the wafer processing, forming micro-particle pollution, causing the particle concentration in the chamber to abnormally increase. These micro-particles participate in the film formation reaction during epitaxial growth, thereby causing the crystal quality of the epitaxial wafer to decrease and the performance to deteriorate.

[0004] The statements herein merely provide background technology related to the present application, and do not necessarily constitute the prior art. SUMMARY

[0005] The purpose of the present application is to provide a flow guide ring and a chemical vapor deposition device, which has the advantage of strong cleaning effect on the gas supply assembly.

[0006] To achieve the above purpose, the present application provides a flow guide ring, which is used in a chemical vapor deposition device, the chemical vapor deposition device comprising a gas supply assembly, the gas inlet part of the gas supply assembly comprising a plurality of nozzle assemblies arranged at intervals in the circumferential direction; a plurality of air supply grooves are formed on the inner circumferential sidewall of the flow guide ring, each of the air supply grooves being in communication with the top surface and the bottom surface of the flow guide ring; the flow guide ring is arranged at intervals outside the gas supply assembly, and is used to guide at least part of the cleaning gas introduced from the top surface of the flow guide ring to the sidewall of the gas inlet part; the projection of the air supply groove on the horizontal plane is located outside the projection of the nozzle assembly on the horizontal plane, and the projection of each air supply groove on the horizontal plane is diametrically opposite to the gap between the projections of two adjacent nozzle assemblies on the horizontal plane.

[0007] Optionally, the ratio of the sum of the areas of the air supply grooves to the total area of the annular region of the flow guide ring provided with the air supply grooves is between 15% and 60%.

[0008] Optionally, the ratio of the depth to the width of the air supply groove is between 0.25 and 2.

[0009] Optionally, the plurality of air supply grooves are uniformly distributed on the inner circumferential sidewall of the flow guide ring in the circumferential direction.

[0010] Optionally, the plurality of vent grooves are arranged along a vertical direction.

[0011] Optionally, at least a portion of the bottom surface extends obliquely from the inner circumferential wall of the flow guide ring towards the top surface.

[0012] Optionally, the vent grooves have a cross-sectional shape of a circular arc or a rectangle.

[0013] Optionally, the outer circumference of the flow guide ring is provided with a stepped portion.

[0014] The present application also provides a chemical vapor deposition device, comprising:

[0015] a reaction chamber comprising a top cover arranged at a top portion, the top cover being provided with a top cover opening in a center thereof;

[0016] a gas supply assembly arranged through the center of the top cover, the gas supply assembly comprising an inlet portion, the inlet portion comprising a plurality of nozzle assemblies arranged at intervals along a circumferential direction, the nozzle assemblies being configured to deliver gas into the reaction chamber;

[0017] a susceptor, and an annular reaction region being arranged between the top cover and the susceptor;

[0018] a flow guide ring as described above, the flow guide ring being arranged around an outer side of the gas supply assembly, and an annular gas inlet gap being arranged between an inner circumference of the flow guide ring and the gas supply assembly, the annular gas inlet gap being configured to guide at least part of the cleaning gas introduced from a top surface of the flow guide ring to a side wall of the inlet portion, and a projection of each vent groove on a horizontal plane being located outside a projection of the nozzle assemblies on the horizontal plane, and a projection of each vent groove on the horizontal plane being diametrically opposite to a gap between projections of two adjacent nozzle assemblies on the horizontal plane.

[0019] Optionally, a width of the annular gas inlet gap is between 0.5% and 5% of a radius of the inlet portion.

[0020] Optionally, a flow rate of the cleaning gas introduced into the region between the nozzle assemblies is greater than a flow rate of the cleaning gas introduced into the region where the nozzle assemblies are arranged.

[0021] Optionally, a maximum value of a vertical component of a flow velocity of the cleaning gas introduced into the region between the nozzle assemblies at an outlet of the annular gas inlet gap is greater than a maximum value of a vertical component of a flow velocity of the cleaning gas introduced into the region where the nozzle assemblies are arranged at the outlet of the annular gas inlet gap.

[0022] Optionally, a ratio of a vertical component of a flow velocity of the cleaning gas introduced into the region between the nozzle assemblies to a horizontal component of a flow velocity of the cleaning gas introduced into the region between the nozzle assemblies at the outlet of the annular gas inlet gap is not less than 50.

[0023] Optionally, the ratio is not less than 100.

[0024] Optionally, each of the nozzle assemblies comprises a plurality of air inlet nozzles arranged in a vertical direction, and the lowest point of the air passage is higher than the uppermost air inlet nozzle.

[0025] Optionally, the number of the air passages in the radial direction opposite to the gap between the projections of the adjacent two nozzle assemblies on the horizontal plane is one, and the air passage is opposite to the central position of the gap between the projections of the adjacent two nozzle assemblies on the horizontal plane.

[0026] Optionally, the number of the air passages in the radial direction opposite to the gap between the projections of the adjacent two nozzle assemblies on the horizontal plane is multiple.

[0027] Optionally, the gas supply assembly further comprises a gas transmission part above the air inlet part, an annular cleaning gas flow gap is formed between the gas transmission part and the top cover, a cleaning gas inlet channel is arranged in the gas transmission part, and the cleaning gas introduced through the cleaning gas inlet channel reaches the top surface of the flow guide ring through the cleaning gas flow gap.

[0028] Optionally, a cleaning gas uniform distribution ring is arranged in the gas transmission part, the cleaning gas uniform distribution ring is in communication with the cleaning gas inlet channel, and a plurality of gas outlet holes are arranged on the side of the cleaning gas uniform distribution ring facing the top cover and distributed in the circumferential direction.

[0029] Compared with the prior art, the flow guide ring and the chemical vapor deposition device provided by the application have the following beneficial effects:

[0030] The flow guide ring and the chemical vapor deposition device provided by the application have the following beneficial effects: BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1 FIG. 1 is a schematic diagram of the overall structure of the chemical vapor deposition device of the application.

[0032] Figure 2 FIG. 4 is a schematic diagram of the structure of the flow guide ring of the application.

[0033] Figure 3 FIG. 5 is a projection view of the flow guide ring and the nozzle assembly in the top view direction.

[0034] Figure 4 is a top view of the flow guide ring.

[0035] Figure 5 is a structural schematic view of the gas inlet portion.

[0036] Figure 6 is a partial structural view of the gas inlet portion and the flow guide ring in a chemical vapor deposition device.

[0037] Figure 7 cleaning gas concentration sampling diagrams at a location where no gas inlet nozzle is arranged on the gas inlet portion before and after the flow guide ring of the present application is installed.

[0038] Figure 8 cleaning gas concentration sampling diagrams at a location where a gas inlet nozzle is arranged on the gas inlet portion before and after the flow guide ring of the present application is installed.

[0039] Attachment Mark Description

[0040] Reaction cavity 10

[0041] Top cover 110

[0042] Bottom wall 120

[0043] Side wall 130

[0044] Reaction area 140

[0045] Annular gas inlet gap 150

[0046] Top plate 160

[0047] Cleaning gas flow gap 170

[0048] Gas supply assembly 20

[0049] Gas transmission portion 210

[0050] Gas inlet portion 211

[0051] Nozzle assembly 220

[0052] Projection 220’ of the nozzle assembly in a horizontal plane

[0053] Gas inlet nozzle 230

[0054] Cleaning gas inlet channel 240

[0055] Process gas transmission channel 250

[0056] Cleaning gas homogenizing ring 260

[0057] Flow guide ring 30

[0058] Vent groove 310

[0059] Inner ring body 320

[0060] outer ring body 330

[0061] outer boundary 340

[0062] inner boundary 350

[0063] susceptor 40

[0064] wafer W DETAILED DESCRIPTION

[0065] The chemical vapor deposition apparatus according to the present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present application will be more apparent from the following description. It should be noted that the drawings are in a very simplified form and are not drawn to precise scale. They are merely intended to facilitate the description of the embodiments of the present application. For the purpose of the present application, the structural, proportional, and dimensional relationships should be understood as merely intended to facilitate the description of the embodiments of the present application. They should not be used to limit the present application. Any modification of the structure, proportional relationship, or size, which does not affect the effects and purposes of the present application, should still fall within the scope of the present application.

[0066] In the prior art chemical vapor deposition apparatus, the reaction gas in the reaction chamber is likely to form solid deposits and deposit at various locations in the reaction chamber during the process. Between processes, clean gas (e.g. chlorine) is introduced into the reaction chamber to react with the deposits and remove the deposits attached to various locations in the reaction chamber. However, the inventors have repeatedly found that the deposits on the gas supply assembly, especially the deposits at the bottom of the sidewall of the gas supply assembly (defined as the bottom of the gas supply assembly in the present application), cannot be effectively removed in the prior art chemical vapor deposition apparatus.

[0067] As shown in Figure 1 The present application provides a chemical vapor deposition apparatus, which includes a reaction chamber 10, a gas supply assembly 20, and a susceptor 40. The susceptor 40 is used to support a wafer W. The reaction chamber 10 includes a top cover 110, a bottom wall 120, and a sidewall 130. The top cover 110 and the bottom wall 120 are respectively arranged at the top and bottom of the sidewall 130. The sidewall 130 surrounds the side of the reaction chamber 10 and connects the top cover 110 and the bottom wall 120. The top cover 110 has a top cover opening in the center, and the gas supply assembly 20 is arranged in the center of the top cover 110 through the opening. The gas supply assembly 20 includes a gas transmission part 210 and a gas inlet part 211. The gas inlet part 211 is arranged below the gas transmission part 210. In one embodiment, the height of the gas inlet part 211 is not less than 20 mm. As shown in Figure 5As shown, the gas inlet part 211 is a cylindrical structure with a central axis, and includes a plurality of nozzle assemblies 220 arranged in a circumferential direction, forming a circumferential array of gas inlet nozzles 230 on the gas inlet part 211. Each nozzle assembly 220 includes a plurality of gas inlet nozzles 230 arranged in the direction of the central axis of the gas inlet part 211. The gas inlet nozzles 230 are used to deliver gas to the reaction region in the reaction chamber 10, wherein during the process, the nozzle assemblies 220 are used to deliver process gas, and during the cleaning process, the nozzle assemblies 220 are used to spray protective gas outward to avoid the cleaning gas from entering the gas supply assembly 20 and causing adverse effects.

[0068] A top plate 160 and a flow guide ring 30 are arranged below the top cover 110, wherein the flow guide ring 30 is arranged at the bottom of the top cover 110, and the flow guide ring 30 is arranged outside the gas supply assembly 20 and spaced apart from the gas supply assembly 20. Specifically, when the flow guide ring 30 is horizontally arranged at the lower part of the top cover 110 of the reaction chamber 10, the flow guide ring 30 surrounds the gas transmission part 210, and there is an annular gas inlet gap 150 between the inner periphery of the flow guide ring 30 and the gas supply assembly 20, or between the inner periphery of the flow guide ring 30 and the gas transmission part 210.

[0069] In an embodiment, the outer periphery of the flow guide ring 30 is provided with a stepped portion, and the top plate 160 is supported and arranged at the bottom of the top cover 110 through the stepped portion of the flow guide ring 30. As shown in the figure, Figure 2 As shown, the flow guide ring 30 includes an inner ring body 320 and an outer ring body 330 arranged in a radial direction and connected to each other. In this embodiment, the inner ring body 320 and the outer ring body 330 are integrally arranged. The thickness of the inner ring body 320 is greater than the thickness of the outer ring body 330, and a stepped portion is formed between the inner ring body 320 and the outer ring body 330, so that when the flow guide ring 30 is arranged below the top cover 110 of the reaction chamber 10, the top plate 160 can be supported through the stepped portion. In other embodiments, other ways can be used to fix the top plate 160, and the present application is not limited thereto, and in this case, the stepped portion can not be provided on the outer periphery of the flow guide ring 30.

[0070] As shown in the figure, Figure 6 As shown, the gas transmission part 210 is internally provided with a process gas transmission channel 250 and a cleaning gas inlet channel 240, wherein one end of the process gas transmission channel 250 is connected to an external process gas source, and one end of the cleaning gas inlet channel 240 is connected to an external cleaning gas source.

[0071] An annular reaction region is arranged between the top cover 110 and the base 40, and the reaction region is arranged around the gas inlet portion 211. The nozzle assembly 220 includes a plurality of gas inlet nozzles 230 arranged in a vertical direction, and in some embodiments, the nozzle assembly 220 includes at least four gas inlet nozzles 230 arranged in a vertical direction. One end of the gas inlet nozzles 230 is connected to the process gas delivery channel 250, and the other end is connected to the reaction region to spray the process gas into the reaction region in layers. It should be noted that in the present embodiment, a plurality of wafers W can be carried on the base 40, and the plurality of wafers W are uniformly distributed along the circumference of the base 40.

[0072] The gas delivery portion 210 passes through the top cover opening, and the outer diameter of the gas delivery portion 210 is smaller than the inner diameter of the top cover 110 opening, so that an annular cleaning gas flow gap 170 is formed between the gas delivery portion 210 and the top cover 110.

[0073] A cleaning gas uniform distribution ring 260 is further arranged in the gas delivery portion 210, one end of the cleaning gas uniform distribution ring 260 is connected to the cleaning gas inlet channel 240, and a plurality of gas outlet holes are arranged on the side of the cleaning gas uniform distribution ring 260 facing the top cover 110 in a circumferential direction. After the cleaning gas enters the cleaning gas uniform distribution ring 260 through the cleaning gas inlet channel 240, the cleaning gas is uniformly distributed in the circumferential direction in the cleaning gas uniform distribution ring 260, and finally flows out of each gas outlet hole into the cleaning gas flow gap 170. The cleaning gas in the cleaning gas flow gap 170 flows downward and flows into the reaction region through the annular gas inlet gap 150 between the gas delivery portion 210 and the flow guide ring 30.

[0074] During the process, the process gas flows into the reaction region inside the reaction chamber 10 through the nozzle assembly 220 to form an epitaxial film on the surface of the wafer W. After the reaction, the process gas flows horizontally to the outside of the reaction region, and is finally pumped out of the reaction chamber 10 by the outside pumping device. During the reaction, in addition to forming an epitaxial layer on the surface of the wafer W, the process gas also forms deposits on the inner walls of the reaction region and the side walls of the gas inlet portion 211.

[0075] To avoid the influence of the deposits on the wafer surface on the film quality in the subsequent process, the interior of the reaction chamber 10 needs to be cleaned. The cleaning process includes inputting cleaning gas into the reaction region of the reaction chamber 10 through the cleaning gas inlet channel 240. In an embodiment, the cleaning gas includes chlorine and nitrogen, wherein the volume ratio of chlorine is 2%-10%. The cleaning gas flows into the reaction region through the annular inlet gap 150, and after the cleaning gas reacts with the deposits on the inner wall of the reaction region and the inlet part 211, it is finally extracted out of the reaction chamber 10 by the external pumping device. Since the cleaning gas may have an adverse effect on the internal channel of the nozzle assembly 220, during the cleaning process, protective gas (such as nitrogen or inert gas, etc.) is also sprayed from the nozzle assembly 220 to prevent the cleaning gas from entering the internal channel of the nozzle assembly 220.

[0076] It may be that during the process of spraying the protective gas outward, the cleaning gas is pushed away from the inlet part 211, thereby reducing the concentration of the cleaning gas on the side wall of the inlet part 211 and reducing the cleaning effect on the inlet part 211.

[0077] As shown in Figure 2 , the present application provides a flow guide ring 30 for a chemical vapor deposition device. The flow guide ring 30 is annular as a whole, and the flow guide ring 30 surrounds the gas supply assembly 20 below the top cover 110 and is coaxially arranged with the gas supply assembly 20. The inner circumferential side wall of the flow guide ring 30 is provided with air passage grooves 310, the air passage grooves 310 communicate the top surface and the bottom surface of the flow guide ring 30, the projection of the air passage grooves 310 on the horizontal plane is located outside the projection of the nozzle assembly 220 on the horizontal plane, and the projection of each air passage groove 310 on the horizontal plane is diametrically opposite to the gap between the projections of the adjacent two nozzle assemblies 220 on the horizontal plane. It is worth mentioning that the present application does not limit the cross-sectional shape of the air passage groove 310 to be a circular arc shape as shown in Figure 2 , for example, the cross-sectional shape of the air passage groove 310 can also be rectangular.

[0078] Figure 3 The top view of the flow guide ring 30 is shown, and the projection 220' of the nozzle assembly on the horizontal plane is shown in the figure, from Figure 3 it can be seen that along the circumferential direction, the projections 220' of the plurality of nozzle assemblies on the horizontal plane are located on the inner side of the air passage grooves 310, and the projection 220' of each nozzle assembly on the horizontal plane is diametrically opposite to the gap between the projections of the adjacent two air passage grooves 310 on the horizontal plane.

[0079] As shown in Figure 4As shown, the ratio of the sum of the areas of the vent grooves 310 to the total area of the annular region of the flow guide ring 30 where the vent grooves 310 are provided is between 15% and 60%. The region of the flow guide ring 30 where the vent grooves 310 are provided is an annular region of the flow guide ring 30, where the outer boundary of the annular region is the largest diameter of the vent grooves 310 on the flow guide ring 30, i.e. Figure 4 the outer boundary 340 shown by the dashed line; and the inner boundary 350 of the annular region is the inner boundary of the flow guide ring 30, the position of the inner boundary 350 is shown in Figure 4 . The total area of the annular region of the flow guide ring 30 where the vent grooves 310 are provided is the total area of the annular region between the outer boundary 340 and the inner boundary 350.

[0080] In an embodiment, the vent grooves 310 are arranged in the vertical direction, and the cleaning gas flowing out of the vent grooves 310 in the vertical direction can avoid the protective gas as much as possible, so that the cleaning gas is not pushed by the protective gas to a position far away from the gas inlet portion 211, thereby increasing the concentration of the cleaning gas at different positions of the sidewall of the gas inlet portion 211, and achieving cleaning of the deposits at the bottom of the sidewall of the gas inlet portion 211, and avoiding the cleaning gas from failing to reach the bottom of the sidewall of the gas inlet portion 211, so that the deposits cannot be removed.

[0081] In an embodiment, the inner circumferential sidewall of the flow guide ring 30 is provided with a plurality of vent grooves 310 in the circumferential direction, and the plurality of vent grooves 310 are uniformly distributed in the circumferential direction on the flow guide ring 30. The present application does not limit the number of the projections of the vent grooves 310 in the horizontal plane, which are directly opposite the gap between the projections of the adjacent two nozzle assemblies 220 in the horizontal plane, for example, the number can be one or more. When the number is one, the projection of the vent groove 310 in the horizontal plane can be directly opposite the central position of the gap between the projections of the adjacent two nozzle assemblies 220 in the horizontal plane, so as to better avoid the cleaning gas from being pushed away from the sidewall of the gas inlet portion 211 by the protective gas.

[0082] In an embodiment, the lowest point of the vent grooves 310 is not lower than the uppermost gas inlet nozzle 230, so as to avoid the flow guide ring 30 from blocking the gas inlet nozzle 230 from delivering gas into the reaction chamber 10 in the horizontal direction.

[0083] As shown in Figure 6 , in the present embodiment, the flow guide ring 30 includes a top surface and a bottom surface, and when the flow guide ring 30 is installed in a chemical vapor deposition device, the bottom surface faces the reaction region in the chemical vapor deposition device. At least part of the bottom surface extends in a direction close to the top surface from the inner circumferential sidewall of the flow guide ring 30, and such arrangement enables the gas sprayed from the gas inlet nozzle 230 to flow along the bottom surface, which is helpful to form a horizontal stable laminar flow in the reaction region, and improves the flow stability of the horizontal flowing gas.

[0084] In the present application, by providing the vent groove 310 on the flow guide ring 30, the cleaning gas, after flowing through the cleaning gas flow gap 170, continues to flow downward, flows into the reaction region through the annular gas inlet gap 150 and the vent groove 310 on the flow guide ring 30. The cleaning gas flowing through the vent groove 310 mainly flows downward along the area between the gas inlet nozzles 230 when it continues to flow downward below the reaction region, and is not easily pushed away from the sidewall of the gas inlet portion 211 by the protective gas sprayed along the nozzle assembly 220, thereby increasing the concentration of the cleaning gas near the sidewall of the gas inlet portion 211, and in particular, increasing the concentration of the cleaning gas at the bottom of the sidewall of the gas inlet portion 211, so as to effectively clean the deposits on the sidewall of the gas supply assembly 20.

[0085] In an embodiment, the flow rate of the cleaning gas introduced into the area between the nozzle assemblies 220 is greater than the flow rate of the cleaning gas introduced into the area where the nozzle assemblies 220 are located, which is more conducive to cleaning the deposits on the sidewall of the gas inlet portion 211, and in particular, more conducive to cleaning the deposits at the bottom of the sidewall of the gas inlet portion 211. In the present embodiment, the area between the nozzle assemblies 220 refers to the area radially outside the gas inlet portion 211 and circumferentially between two adjacent nozzle assemblies 220, i.e., the area indicated by letter A in the figure; and the area where the nozzle assemblies 220 are located refers to the area radially outside the gas inlet portion 211 and circumferentially opposite to the nozzle assemblies 220, i.e., the area indicated by letter B in the figure. Figure 3 Figure 3

[0086] In an embodiment, the maximum vertical flow rate component of the cleaning gas introduced into the area between the nozzle assemblies 220 at the outlet of the annular gas inlet gap 150 (i.e., the bottom of the annular gas inlet gap 150) is greater than the maximum vertical flow rate component of the cleaning gas introduced into the area where the nozzle assemblies 220 are located at the outlet of the annular gas inlet gap 150, which is more conducive to cleaning the deposits on the sidewall of the gas inlet portion 211, and in particular, more conducive to cleaning the deposits at the bottom of the sidewall of the gas inlet portion 211. In the present embodiment, the definitions of the area between the nozzle assemblies 220 and the area where the nozzle assemblies 220 are located are the same as in the previous embodiment, and will not be repeated here.

[0087] In an embodiment, the ratio of the vertical flow rate component to the horizontal flow rate component (i.e., vertical flow rate component / horizontal flow rate component) of the cleaning gas introduced into the area between the nozzle assemblies 220 at the outlet of the annular gas inlet gap 150 is not less than 50; in another embodiment, the ratio is not less than 100, and the vertical flow rate component of the cleaning gas is greater than the horizontal flow rate component, so that the cleaning gas can flow downward in the vertical direction to a farther position to clean the deposits on the sidewall at the bottom of the gas supply assembly 20.

[0088] ​​In one embodiment, the axis of the venting groove 310 is parallel to the central axis of the flow guide ring 30, i.e. the venting groove 310 is arranged in the vertical direction, and when the cleaning gas flows through the venting groove 310, the speed component of the cleaning gas in the horizontal direction is reduced and the component in the vertical direction is increased, so that the cleaning gas flows as much as possible to the bottom of the sidewall of the gas inlet portion 211, and the cleaning effect on the deposits attached to the bottom of the sidewall of the gas inlet portion 211 is improved. In other embodiments, the axis of the venting groove 310 can not be parallel to the central axis of the flow guide ring 30, and the present application is not limited thereto.

[0089] If the annular gas inlet gap 150 is too small, the speed of the cleaning gas flowing out of the annular gas inlet gap 150 in the vertical direction downward will be too large, causing too much cleaning gas to flow to the susceptor 40, and thus causing the concentration of the cleaning gas near the susceptor 40 to be too high, corroding the susceptor 40 and affecting the service life of the susceptor 40. If the annular gas inlet gap 150 is too large, too much cleaning gas will flow from the annular gas inlet gap 150 into the reaction region, and the cleaning gas flowing from the venting groove 310 will be relatively less, the gas guiding effect of the venting groove 310 on the cleaning gas will be reduced, and the cleaning effect of the cleaning gas on the deposits deposited on the bottom of the sidewall of the gas inlet portion 211 will be reduced. In one embodiment, the width of the annular gas inlet gap 150 is between 0.5% and 5% of the radius of the gas inlet portion 211, but the present application is not limited thereto.

[0090] If the ratio of the depth to the width of the venting groove 310 is too large, the venting groove 310 is too long and narrow, which is not conducive to guiding the cleaning gas to the sidewall of the gas inlet portion 211. If the ratio of the depth to the width of the venting groove 310 is too small, the venting groove 310 is too wide, and the cleaning gas guided out of the venting groove 310 is easily pushed away from the nozzle assembly 220 by the protective gas sprayed from the nozzle assembly 220, which is not conducive to guiding the cleaning gas to the bottom of the sidewall of the gas inlet portion 211. In one embodiment, as shown in FIG. 6, the ratio of the depth w to the width d of the venting groove 310 (i.e. the depth w / width d) is 0.25-2, but the present application is not limited thereto. Figure 2

[0091] Figure 7 The simulation results of the sampling points at different heights of the gas inlet portion 211 in the vertical direction at the positions where the nozzle assembly 220 is not arranged are shown in FIG. 7, and the sampling lines formed by connecting the sampling points of the results in FIG. 7 are at the positions of the D lines shown in FIG. 8. Figure 7 Figure 5 Figure 7 ​​​The vertical coordinate represents the concentration of the cleaning gas, in units of moles per cubic meter; the horizontal coordinate is the distance from the bottom of the side wall of the gas supply assembly 20, in units of millimeters. In this embodiment, the nozzle assembly 220 along the vertical direction includes five layers of gas inlet nozzles 230. The sampling line starts from the bottom of the side wall of the gas supply assembly 20 below the entity of the lowest layer of gas inlet nozzles 230, extends in the direction away from the bottom of the side wall of the gas supply assembly 20 along the axis direction of the nozzle assembly 220, and stops at the top of the gas inlet portion 211 above the highest layer of gas inlet nozzles 230. The sampling line does not pass through each layer of gas inlet nozzles 230.

[0092] Figure 7 The sampling results of the concentration of the cleaning gas at different positions in Example 1 using the flow guide ring 30 with the ventilation groove 310 of the present application are shown. Comparative Example 1 shows the sampling results of the concentration of the cleaning gas at different positions in the comparative example using the flow guide ring without the ventilation groove. Figure 7 It can be seen that the concentration of the cleaning gas in Example 1 is significantly improved relative to Comparative Example 1 in the area without the nozzle assembly 220, especially near the bottom of the side wall of the gas supply assembly 20, thereby significantly improving the cleaning effect on the bottom of the side wall of the gas supply assembly 20. In addition, the total amount of the cleaning gas input in Example 1 and Comparative Example 1 does not change, but the concentration of the cleaning gas at a distance from the bottom in Example 1 is significantly improved, resulting in a slightly lower concentration of the cleaning gas in Example 1 than in Comparative Example 1 at a distance of more than 20 mm from the bottom. However, this does not affect the cleaning effect on the top of the gas inlet portion 211.

[0093] Figure 8 The simulation diagram of the sampling results at different height positions in the gas inlet portion 211 of Example 1 along the vertical direction at the gas inlet nozzles 230 is shown, and the sampling line formed by connecting the sampling points is shown. Figure 8 The specific position of the sampling line formed by connecting the sampling points in Example 1 is shown. Figure 5 The C line shown in Example 1. Figure 8 The vertical coordinate represents the concentration of the cleaning gas, in units of moles per cubic meter; the horizontal coordinate is the distance from the bottom of the side wall of the gas supply assembly 20, in units of millimeters. The sampling line starts from the bottom of the side wall of the gas supply assembly 20 below the entity of the lowest layer of gas inlet nozzles 230, extends in the direction away from the bottom of the side wall of the gas supply assembly 20 along the axis direction of the nozzle assembly 220, and stops at the top of the gas inlet portion 211 above the highest layer of gas inlet nozzles 230. The sampling line respectively passes through each layer of gas inlet nozzles 230.

[0094] Figure 8Example 1 presents sampling results of the concentration of clean gas at different locations when using the guide ring 30 with ventilation slots 310 as described in this application. Comparative Example 1 presents sampling results of a comparative example of the concentration of clean gas at different locations when using a conventional guide ring 30 without ventilation slots 310. Figure 8 It can be seen that by using the guide ring 30 with the ventilation groove 310 of this application, the concentration of clean gas between two adjacent upper and lower air intake nozzles 230 can be significantly increased, thereby improving the cleaning effect on the deposits adhering to the side wall of the air intake section 211. Especially for the air intake nozzles 230 near the bottom, such as... Figure 8 As shown, when using a guide ring without ventilation slots, the concentration of clean gas at the three lower air inlet nozzles is almost zero. However, with the guide ring 30 of this application that has ventilation slots 310, even at the bottommost air inlet nozzle 230, the concentration of clean gas remains relatively constant. This clean gas effectively removes deposits adhering to the bottom sidewall of the air inlet section 211. The technical solution provided by this invention, by incorporating the guide ring 30 in a chemical vapor deposition apparatus, allows clean gas to effectively clean the gas supply component 20, while reducing clean gas loss and related pollutant emissions. It combines low-carbon environmental protection with cost control advantages, contributing to the green and sustainable development of the semiconductor manufacturing industry.

[0095] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0096] In the description of this invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0097] In the description of the application, unless otherwise clearly specified and limited, the terms "mounting", "connection", "connecting", "fixing" should be understood broadly, for example, can be fixed connection, can also be detachable connection, or integral; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship of two elements. For those skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.

[0098] In the present application, unless otherwise clearly specified and limited, "on" or "under" of the first feature to the second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, "on", "above" and "above" of the first feature to the second feature include that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. "Below", "below" and "below" of the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0099] Although the content of the present application has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the present application. After reading the above content, various modifications and alternatives of the present application will be obvious to those skilled in the art. Therefore, the protection scope of the present application should be defined by the appended claims.

Claims

1. A flow ring, characterized in that, The flow guide ring is used in a chemical vapor deposition device, the chemical vapor deposition device comprising a gas supply assembly, an intake portion of the gas supply assembly comprising a plurality of nozzle assemblies arranged at intervals in a circumferential direction; a plurality of air passage grooves are formed on an inner circumferential side wall of the flow guide ring, each of the air passage grooves being in communication with a top surface and a bottom surface of the flow guide ring; the flow guide ring is arranged at intervals outside the gas supply assembly, and is used to guide at least part of the cleaning gas introduced from the top surface of the flow guide ring to a side wall of the intake portion; a projection of the air passage groove on a horizontal plane is located outside a projection of the nozzle assembly on the horizontal plane, and a projection of each of the air passage grooves on the horizontal plane is diametrically opposite to a gap between projections of two adjacent nozzle assemblies on the horizontal plane.

2. The flow ring of claim 1, wherein, A ratio of a sum of areas of the air passage grooves to a total area of an annular region of the flow guide ring provided with the air passage grooves is between 15% and 60%.

3. The flow ring of claim 1, wherein, A ratio of a depth to a width of the air passage groove is between 0.25 and 2.

4. The flow ring of claim 1, wherein, The plurality of air passage grooves are uniformly distributed on the inner circumferential side wall of the flow guide ring in the circumferential direction.

5. The flow ring of claim 1 or 4, wherein, The plurality of air passage grooves are arranged in a vertical direction.

6. The flow ring of claim 1, wherein, At least part of an area of the bottom surface extends in a direction close to the top surface from the inner circumferential side wall of the flow guide ring.

7. The flow ring of claim 1, wherein A cross-sectional shape of the air passage groove is circular arc-shaped or rectangular.

8. The flow ring of claim 1, wherein, An outer circumference of the flow guide ring is provided with a stepped portion.

9. A chemical vapor deposition apparatus characterized by comprising: The chemical vapor deposition device comprises a reaction chamber, a top cover arranged on a top portion of the reaction chamber, a central portion of the top cover being provided with a top cover opening; a gas supply assembly, the gas supply assembly being arranged through the central portion of the top cover, the gas supply assembly comprising an intake portion, the intake portion comprising a plurality of nozzle assemblies arranged at intervals in a circumferential direction, the nozzle assemblies being used to deliver gas into the reaction chamber; a base, an annular reaction region being arranged between the top cover and the base; the flow guide ring as claimed in any one of claims 1 to 8, the flow guide ring being arranged outside the gas supply assembly, and an annular intake gap being arranged between an inner circumference of the flow guide ring and the gas supply assembly, the annular intake gap being used to guide at least part of the cleaning gas introduced from the top surface of the flow guide ring to a side wall of the intake portion; a projection of the air passage groove on a horizontal plane is located outside a projection of the nozzle assembly on the horizontal plane, and a projection of each of the air passage grooves on the horizontal plane is diametrically opposite to a gap between projections of two adjacent nozzle assemblies on the horizontal plane.

10. The chemical vapor deposition apparatus of claim 9, wherein A width of the annular intake gap is between 0.5 and 5% of a radius of the intake portion.

11. The chemical vapor deposition apparatus of claim 9, wherein A flow rate of the cleaning gas introduced into a region between the nozzle assemblies is greater than a flow rate of the cleaning gas introduced into a region where the nozzle assemblies are arranged.

12. The chemical vapor deposition apparatus of claim 9, wherein A maximum value of a flow rate component in a vertical direction of the cleaning gas introduced into the region between the nozzle assemblies at an outlet of the annular intake gap is greater than a maximum value of a flow rate component in a vertical direction of the cleaning gas introduced into the region where the nozzle assemblies are arranged at the outlet of the annular intake gap.

13. The chemical vapor deposition apparatus of claim 9, wherein A ratio of the flow rate component in the vertical direction to a flow rate component in a horizontal direction of the cleaning gas introduced into the region between the nozzle assemblies at the outlet of the annular intake gap is not less than 50.

14. The chemical vapor deposition apparatus of claim 13, wherein The ratio is not less than 100.

15. The chemical vapor deposition apparatus of claim 9, wherein Each of the nozzle assemblies comprises a plurality of air inlet nozzles arranged in a vertical direction, and the lowest point of the air passage is higher than the uppermost air inlet nozzle.

16. The chemical vapor deposition apparatus of claim 9, wherein The number of the air passages in the radial direction, which are directly opposite to the gap between the projections of the adjacent two nozzle assemblies on the horizontal plane, is one, and the air passage is directly opposite to the central position of the gap between the projections of the adjacent two nozzle assemblies on the horizontal plane.

17. The chemical vapor deposition apparatus of claim 9, wherein The number of the air passages in the radial direction, which are directly opposite to the gap between the projections of the adjacent two nozzle assemblies on the horizontal plane, is multiple.

18. The chemical vapor deposition apparatus of claim 9, wherein The gas supply assembly further comprises a gas transmission part above the air inlet part, and an annular cleaning gas flow gap is formed between the gas transmission part and the top cover.

19. The chemical vapor deposition apparatus of claim 18, wherein The gas transmission part is provided with a cleaning gas uniform distribution ring, which is in communication with the cleaning gas inlet channel and is provided with a plurality of gas outlet holes distributed in the circumferential direction on the side facing the top cover.

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