Water-based diamond wire silicon wafer cutting fluid and preparation method thereof
By optimizing the component ratio of the water-based diamond wire silicon wafer cutting fluid, a lubricating film and uniform suspension are formed, solving the problem of unstable cutting fluid performance and achieving more efficient silicon wafer cutting.
Patent Information
- Application Number
- CN202511429800.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-30
- Publication Date
- 2026-02-17
AI Technical Summary
In existing water-based diamond wire cutting fluids for silicon wafers, the oil and water phases are prone to uneven mixing, leading to decreased lubrication and penetration performance, and affecting the stability of the cutting fluid's performance.
By using specific proportions of dispersants, lubricants, penetrants, emulsifiers, and other components, a lubricating film and uniform suspension are formed, thereby improving the performance of the cutting fluid.
By combining the components, the surface friction coefficient of the silicon wafer is reduced, the permeability and stability of the cutting fluid are improved, and the cutting efficiency is increased.
Smart Images
Figure CN121538029A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of solar cell technology, and in particular to an aqueous diamond wire silicon wafer cutting fluid and its preparation method. Background Technology
[0002] Solar cell power generation is a sustainable and clean energy source that converts sunlight into electricity using the photovoltaic effect of semiconductor pn junctions. Silicon wafers are the basic material for manufacturing solar cells. Silicon wafer cutting is a crucial link in the photovoltaic industry chain, and the quality of wafer cutting directly affects downstream cell manufacturing. Diamond wire cutting technology is the mainstream silicon wafer cutting technology currently available. In diamond wire cutting, the hardness and sharp edges of diamond particles are fully utilized to gradually saw through the silicon rod, a process accompanied by significant frictional heat. Therefore, diamond-specific wire cutting fluids must possess excellent lubrication and penetration properties.
[0003] In water-based diamond wire silicon wafer cutting fluids used in related technologies, dispersants and penetrants are added to meet the required lubrication and penetration performance of the cutting fluid. However, in some cases, the oil phase and water phase in the cutting fluid are not mixed evenly, which easily produces a thick layer, resulting in a decrease in the lubrication and penetration performance of the cutting fluid and affecting the performance stability of the cutting fluid. Summary of the Invention
[0004] This application proposes a water-based diamond wire silicon wafer cutting fluid formulation, aiming to improve the lubrication, penetration and emulsification properties of diamond wire silicon wafer cutting fluid formulations in related technologies, thereby improving the performance of the cutting fluid and thus increasing the efficiency of silicon wafer cutting.
[0005] To achieve the above objectives, this application adopts the following technical solution:
[0006] In a first aspect, a water-based diamond wire cutting fluid formulation is provided, comprising the following components by weight:
[0007] 17%–40% of the dispersant is selected from polyether;
[0008] 8%–18% lubricant;
[0009] 3%–9% penetrant;
[0010] 2% to 9% emulsifier; and the balance is deionized water.
[0011] Furthermore, the polyether is selected from one or more of C4 alcohol-terminated ethylene oxide / propylene oxide block copolyethers and C6 alcohol-terminated ethylene oxide / propylene oxide block copolyethers.
[0012] Furthermore, the lubricant is selected from castor oil polyoxyethylene ether.
[0013] Furthermore, the penetrant is selected from diethylene glycol butyl ether.
[0014] Furthermore, the emulsifier is selected from octadecylamine polyoxyethylene ether.
[0015] Furthermore, the water-based diamond wire silicon wafer cutting fluid also includes the following components by weight:
[0016] 0.2% to 0.6% of a chelating agent, selected from one or more of disodium ethylenediaminetetraacetate, sodium citrate, and sodium gluconate;
[0017] 0.1% to 0.2% of an antibacterial agent, selected from sodium molybdate;
[0018] 0.1% to 0.2% of a rust inhibitor, selected from one or more of MC tricarboxylic acid, sebacic acid, and dodecanoic acid;
[0019] 1% to 4% of the defoamer is selected from silicone amides;
[0020] A pH adjuster of 1% to 3% is selected from malonic acid;
[0021] 0.4% to 2.5% of the extreme pressure agent is selected from one or more of sulfur-chlorinated cottonseed oil, dibutyl phosphite, and triethyl phosphate; and the balance is deionized water.
[0022] Secondly, this application provides a method for preparing an aqueous diamond wire silicon wafer cutting fluid, the method comprising:
[0023] Mix 17%–40% dispersant, 8%–18% lubricant, 3%–9% penetrant, 2%–9% emulsifier, and the remainder deionized water, and stir until homogeneous to obtain an aqueous diamond wire silicon wafer cutting fluid.
[0024] Furthermore, after thorough mixing, add 0.2%–0.6% chelating agent, 0.1%–0.2% antibacterial agent, 0.1%–0.2% rust inhibitor, 1%–4% defoamer, 1%–3% pH adjuster, and 0.4%–2.5% extreme pressure agent, and mix thoroughly.
[0025] The solution at the bottom layer is pumped to the top layer through circulation to obtain water-based diamond wire silicon wafer cutting fluid;
[0026] The lubricant in the cutting fluid according to the present invention can form a lubricating film between the diamond wire and the silicon wafer, reducing the coefficient of friction on the silicon wafer surface. The penetrant can reduce the surface tension of the cutting fluid, allowing it to easily penetrate between the diamond wire and the silicon wafer, thereby reducing mechanical damage to the silicon wafer. Furthermore, the emulsifier in the cutting fluid enables the various components to be more uniformly suspended in the aqueous phase, preventing stratification and improving the performance stability of the cutting fluid. Therefore, thanks to the synergistic effect of the various components, the performance of the cutting fluid of the present invention is improved, thereby increasing the efficiency of silicon wafer cutting. Attached Figure Description
[0027] Figure 1 This is a schematic flowchart illustrating a method for preparing an aqueous diamond wire silicon wafer cutting fluid, provided as an embodiment of this application. Detailed Implementation
[0028] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.
[0029] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features.
[0030] Example 1
[0031] This embodiment provides a water-based diamond wire cutting fluid formulation for silicon wafers. It comprises the following components by weight:
[0032] 17%–40% of the dispersant is selected from polyether;
[0033] 8%–18% lubricant;
[0034] 3%–9% penetrant;
[0035] 2% to 9% emulsifier; and the balance is deionized water.
[0036] Dispersants in cutting fluids can adsorb onto the surface of particles, creating a potential barrier that hinders particle aggregation. Furthermore, they generate entropic repulsion and penetrating hydration forces, reducing the strength of microcracks within particle clusters and thus promoting cluster cracking. Using C4 alcohol-terminated ethylene oxide / propylene oxide block copolymers as dispersants particularly enhances the dispersibility of cutting fluids. "C4 alcohol" refers to alcohols with four carbon groups.
[0037] Optionally, the proportion of dispersant in the cutting fluid can be any value between 20%, 25%, 30%, 35%, 40%, and 17% to 40%, and this application does not specifically limit this.
[0038] Lubricants can lubricate the surface of objects and reduce the coefficient of friction. Castor oil polyoxyethylene ether, as a lubricant, can in particular improve the hygroscopic properties and thermal oxidizing properties of cutting fluids.
[0039] Optionally, the proportion of lubricant in the cutting fluid can be any value between 9%, 10%, 13%, 15%, 16% and 8% to 18%, and this application embodiment does not specifically limit this.
[0040] Penetrants can penetrate into the cutting edge of the crack to create chemical splitting, thus improving cutting efficiency. Diethylene glycol butyl ether, as a penetrant, has very low surface tension, increases the solubility of certain substances in other substances, acts as an additive to help certain substances pass through the physical barriers of other substances, and can also act as a miscible bridging agent for oils and incompatible polar solvents.
[0041] Optionally, the proportion of penetrant in the cutting fluid can be any value between 3%, 4%, 6%, 7%, 9%, and 3% to 9%, and the embodiments of this application do not specifically limit this.
[0042] Emulsifiers reduce surface tension. Octadecylamine polyoxyethylene ether is a novel nonionic surfactant. In cutting fluids, octadecylamine polyoxyethylene ether can improve emulsification, which will be discussed in detail below.
[0043] Optionally, the proportion of emulsifier in the cutting fluid can be any value between 2%, 4%, 6%, 7%, 9%, and 2% to 9%, and the embodiments of this application do not specifically limit this.
[0044] Understandably, the lubricant in the cutting fluid according to the present invention can form a lubricating film between the diamond wire and the silicon wafer, reducing the coefficient of friction on the silicon wafer surface. The penetrant can reduce the surface tension of the cutting fluid, allowing it to easily penetrate between the diamond wire and the silicon wafer, thereby reducing mechanical damage to the silicon wafer. Furthermore, the emulsifier in the cutting fluid enables the various components to be more uniformly suspended in the aqueous phase, preventing stratification. Therefore, thanks to the synergistic effect of the various components, the performance of the cutting fluid of the present invention is improved, thereby increasing the efficiency of silicon wafer cutting.
[0045] In some embodiments, to ensure the stability and lifespan of the aqueous diamond wire silicon wafer cutting fluid, the formulation of the aqueous diamond wire silicon wafer cutting fluid provided in this application embodiment further includes the following components by weight:
[0046] 0.2%–0.6% chelating agent;
[0047] 0.1%–0.2% antibacterial agent;
[0048] 0.1% to 0.2% rust inhibitor;
[0049] 1% to 4% defoamer;
[0050] 1%–3% pH adjuster;
[0051] Extreme pressure agent of 0.4% to 2.5%.
[0052] Chelating agents can form complexes with metal ions, making them stable in the cutting fluid. This helps prevent the oxidation and precipitation of metal ions, reduces the impurity content in the cutting fluid, and improves the stability and service life of the cutting fluid.
[0053] Optionally, the chelating agent can be one or more of disodium ethylenediaminetetraacetate, sodium citrate, and sodium gluconate; the proportion of the chelating agent in the cutting fluid can be any value between 0.2%, 0.25%, 0.3%, 0.4%, 0.5%, and 0.2% to 0.6%, and this application does not specifically limit this.
[0054] Antimicrobial agents can prevent the growth of microorganisms in the cutting fluid and extend the shelf life of the cutting fluid.
[0055] Optionally, the antibacterial agent can be sodium molybdate; the proportion of the antibacterial agent in the cutting fluid can be any value between 0.1%, 0.12%, 0.14%, 0.17%, 0.2%, and 0.1% to 0.2%, and this application embodiment does not specifically limit this.
[0056] Rust inhibitors can prevent the diamond wires used to cut silicon wafers from rusting.
[0057] Optionally, the rust inhibitor can be one or more of MC tricarboxylic acid, sebacic acid, and dodecanoic acid; the proportion of the rust inhibitor in the cutting fluid can be any value between 0.1%, 0.12%, 0.14%, 0.17%, 0.2%, and 0.1% to 0.2%, and this application does not specifically limit this.
[0058] Defoamers can prevent bubbles from forming during the cutting process.
[0059] Optionally, the defoamer can be silicone amide; the proportion of the defoamer in the cutting fluid can be any value between 1%, 2%, 3%, 3.5%, 4% and 1% to 4%, and this application embodiment does not specifically limit this.
[0060] pH adjusters are used to adjust the pH value of the cutting fluid, which is generally between 5 and 7.
[0061] Optionally, the pH adjuster can be malonic acid; the proportion of the pH adjuster in the cutting fluid can be any value between 1%, 1.5%, 2%, 2.5%, 3%, and 1% to 3%, and this application embodiment does not specifically limit this.
[0062] Extreme pressure agents are used to chemically react with metal surfaces at high temperatures to form a chemisorbed film. Compared to physisorbed films, chemisorbed films are more resistant to higher temperatures and therefore can be used in extreme pressure lubrication friction conditions.
[0063] Optionally, the extreme pressure agent can be one or more of sulfur-chlorinated cottonseed oil, dibutyl phosphite, and triethyl phosphate; the proportion of the extreme pressure agent in the cutting fluid can be any value between 0.4%, 0.8%, 1.3%, 2%, 2.4%, and 0.4% to 2.5%, and this application does not specifically limit this.
[0064] Example 2
[0065] This embodiment provides a water-based diamond wire cutting fluid formulation for silicon wafers. Specifically, it includes the following components by weight:
[0066] 35% of C4 alcohol-terminated ethylene oxide / propylene oxide block copolymer ether was used as a dispersant;
[0067] 9% castor oil polyoxyethylene ether is used as a lubricant;
[0068] 6% diethylene glycol butyl ether was used as a penetrant;
[0069] 5% octadecylamine polyoxyethylene ether was used as an emulsifier;
[0070] 0.4% disodium ethylenediaminetetraacetate was used as a chelating agent;
[0071] 0.15% sodium molybdate was used as an antibacterial agent;
[0072] 0.15% of ternary polycarboxylic acid was used as a rust inhibitor;
[0073] 4% silicone amide was used as an antifoaming agent;
[0074] 0.5% malonic acid was used as a pH adjuster;
[0075] 0.5% dibutyl phosphite was used as an extreme pressure agent; and the balance was deionized water.
[0076] For comparison, a second comparative example was set up, in which the lubricant in the above formulation was replaced with polyethylene glycol in the prior art, while the other components remained unchanged. The performance of the cutting fluid formulation was evaluated by measuring the cutting torque, silicon wafer trace value, and total thickness deviation (TTV) during the cutting process. The measurement results are shown in Table 1 below.
[0077] The test process for average cutting torque is as follows: When cutting an 820mm long silicon rod with a high-precision slicing machine, the slicing machine displays the maximum cutting torque (unit N·m). n silicon rods are cut once with the same cutting fluid, and the average cutting torque is calculated.
[0078] The testing process for the average line mark value and the maximum TTV value is as follows: After sorting silicon wafers of the same type using an Autowell silicon wafer sorter, the average line mark value and the maximum TTV value are recorded. Using the same cutting fluid formula, n silicon rods are cut once to obtain silicon wafer samples and their average values are calculated.
[0079] Table 1: Cutting fluid composition and performance test results of Example 1 and Comparative Example 1
[0080]
[0081] As shown in Table 1, compared with Comparative Example 2, Example 2 exhibits lower average cutting torque, lower average wire mark value, and lower maximum TTV. This is attributed to the castor oil polyoxyethylene ether used in Example 2 as a lubricant, which forms a lubricating film between the diamond wire and the silicon wafer, reducing the coefficient of friction on the silicon wafer surface. Castor oil polyoxyethylene ether significantly improves the lubrication performance of the cutting fluid, and a lower coefficient of friction on the silicon wafer surface results in lower cutting torque, lower wire mark value, and lower TTV. This is of great significance for silicon wafer cutting and downstream solar cell production, effectively improving production efficiency.
[0082] Example 3
[0083] This embodiment provides another aqueous diamond wire silicon wafer cutting fluid formulation, specifically comprising the following components by weight:
[0084] 30% of C4 alcohol-terminated ethylene oxide / propylene oxide block copolymer ether was used as a dispersant;
[0085] 11% castor oil polyoxyethylene is used as a lubricant;
[0086] 6% diethylene glycol butyl ether was used as a penetrant;
[0087] 3% octadecylamine polyoxyethylene ether was used as an emulsifier;
[0088] 0.2% sodium citrate was used as a chelating agent;
[0089] 0.2% sodium molybdate was used as an antibacterial agent;
[0090] 0.2% ternary polycarboxylic acid was used as a rust inhibitor;
[0091] 5% silicone amide was used as an antifoaming agent;
[0092] 1% malonic acid was used as a pH adjuster;
[0093] 0.5% dibutyl phosphite was used as an extreme pressure agent; and the balance was deionized water.
[0094] For comparison, Comparative Example 3 was set up, in which the penetrant was replaced with fatty alcohol polyoxyethylene ether from the prior art, while the other components remained unchanged. Similar to Example 2, the performance of the cutting fluid formulation was evaluated by measuring the cutting torque, breakage rate, average line mark, and total thickness deviation (TTV) during the cutting process. The measurement results are shown in Table 2 below. The measurement methods for cutting torque, average line mark, and total thickness deviation (TTV) in this example are the same as those described in Example 2.
[0095] The process of measuring the wire breakage rate is as follows: Use a high-precision slicing machine with cutting fluid to cut n 820mm long silicon rods, and record the number x of silicon rods with diamond wire breakage during the cutting process. The wire breakage rate is x / n×100%.
[0096] Table 2: Cutting fluid composition and performance test results of Example 3 and Comparative Example 3
[0097]
[0098]
[0099] As shown in Table 2, compared with Comparative Example 3, Example 3 exhibits fewer cutting passes, a lower breakage rate, a smaller average wire mark value, and a smaller total transducer volume (TTV). This is attributed to the use of diethylene glycol butyl ether as a penetrant in Example 3, which reduces the surface tension of the cutting fluid, allowing it to easily penetrate between the diamond wire and the silicon wafer, thus minimizing mechanical damage to the silicon wafer. Therefore, compared to Comparative Example 3, the cutting fluid in Example 3 containing octadecylamine polyoxyethylene ether as an emulsifier demonstrates superior penetration performance, particularly the lower breakage rate, which is significant for silicon wafer production and consequently, solar cell production.
[0100] Example 4
[0101] This embodiment provides another aqueous diamond wire silicon wafer cutting fluid formulation, specifically comprising the following components by weight:
[0102] 40% of C6 alcohol-terminated ethylene oxide / propylene oxide block copolymer ether was used as a dispersant;
[0103] 9% castor oil polyoxyethylene is used as a lubricant;
[0104] 6% diethylene glycol butyl ether was used as a penetrant;
[0105] 5% octadecylamine polyoxyethylene ether was used as an emulsifier;
[0106] 0.2% sodium citrate was used as a chelating agent;
[0107] 0.2% sodium molybdate was used as an antibacterial agent;
[0108] 0.2% ternary polycarboxylic acid was used as a rust inhibitor;
[0109] 5% silicone amide was used as an antifoaming agent;
[0110] 1% malonic acid was used as a pH adjuster;
[0111] 0.5% dibutyl phosphite was used as an extreme pressure agent; and the balance was deionized water.
[0112] As a comparison, Comparative Example 4 was set up, in which no emulsifier was added and the other components remained unchanged. After mixing the cutting fluids of Example 4 and Comparative Example 4 and letting them stand for 10 minutes, stratification was observed. The upper layer after stratification was measured with a ruler, and the measurement results are shown in Table 3 below.
[0113] Table 3: Cutting fluid composition and performance test results of Example 4 and Comparative Example 4
[0114]
[0115] The better the emulsifying properties of the cutting fluid, the thinner the upper layer after standing. As shown in Table 3, the cutting fluid formulation containing 5% octadecylamine polyoxyethylene ether as an emulsifier (i.e., Example 4) exhibits a significantly thinner layer after standing compared to the formulation without 5% octadecylamine polyoxyethylene ether (i.e., Comparative Example 4). This is because the octadecylamine polyoxyethylene ether in the cutting fluid acts as an emulsifier, ensuring that all components are more uniformly suspended in the aqueous phase and do not separate into layers.
[0116] Example 5
[0117] This embodiment provides a method for preparing an aqueous diamond wire silicon wafer cutting fluid. According to the composition and proportion of each component in the aqueous diamond wire silicon wafer cutting fluid provided in Embodiment 1, the corresponding components are weighed, such as 17%–40% dispersant, 8%–18% lubricant, 3%–9% penetrant, and 2%–9% emulsifier. The 17%–40% dispersant, 8%–18% lubricant, 3%–9% penetrant, and 2%–9% emulsifier are mixed with the remaining deionized water and stirred until homogeneous to obtain the aqueous diamond wire silicon wafer cutting fluid.
[0118] In one example, 35% by weight of C4 alcohol-terminated ethylene oxide / propylene oxide block copolymer ether (dispersant), 9% castor oil polyoxyethylene ether (lubricant), 6% diethylene glycol butyl ether (penetrating agent), 5% octadecylamine polyoxyethylene ether (emulsifier), and the balance deionized water are mixed and stirred for 10 to 20 minutes to ensure uniform mixing, thus forming an aqueous diamond wire silicon wafer cutting fluid.
[0119] In some embodiments, to ensure the stability and lifespan of the aqueous diamond wire silicon wafer cutting fluid, the preparation method of the aqueous diamond wire silicon wafer cutting fluid provided in this application embodiment, such as... Figure 1 As shown, it includes the following steps:
[0120] S1. Mix the dispersant, lubricant, penetrant, emulsifier and the remaining deionized water, and stir until homogeneous.
[0121] The dispersant, lubricant, penetrant, and emulsifier are added at weights of 17%–40%, 8%–18%, 3%–9%, and 2%–9%, respectively.
[0122] S2. Add chelating agent, antibacterial agent, rust inhibitor, defoamer, pH adjuster and extreme pressure agent, and stir well.
[0123] The chelating agent, antibacterial agent, rust inhibitor, defoamer, pH adjuster, and extreme pressure agent are added at weights of 0.2%–0.6%, 0.1%–0.2%, 0.1%–0.2%, 1%–4%, 1%–3%, and 0.4%–2.5%, respectively.
[0124] In one example, 0.4% by weight of disodium ethylenediaminetetraacetate (chelating agent), 0.15% by weight of sodium molybdate (antibacterial agent), 0.15% by weight of ternary polycarboxylic acid (rust inhibitor), 4% by weight of silicone amide (defoamer), 0.5% by weight of malonic acid (pH adjuster) and 0.5% by weight of dibutyl phosphite (extreme pressure agent) were added, and stirring was continued for 100 min to 170 min to obtain an aqueous diamond wire silicon wafer cutting solution.
[0125] In some embodiments, in order to ensure sufficient dispersion of the components in the cutting fluid, the preparation method of the water-based diamond wire silicon wafer cutting fluid further includes step S3.
[0126] S3. The solution at the bottom layer is pumped to the top layer to obtain the water-based diamond wire silicon wafer cutting fluid.
[0127] In some embodiments, a water pump can be used to draw the solution from the bottom layer to the top layer, circulating it for 5 to 20 minutes to obtain a silicon wafer cutting fluid. This circulation process ensures that the various components in the cutting fluid are fully dispersed, preventing stratification.
[0128] Optionally, after step S3, the silicon wafer cutting fluid is inspected, qualified products are packaged, and unqualified products are treated as unqualified products.
[0129] In this embodiment, it is understood that the selection and dosage of all components can be adjusted according to actual needs.
[0130] The lubricant in the cutting fluid according to the present invention can form a lubricating film between the diamond wire and the silicon wafer, reducing the coefficient of friction on the silicon wafer surface. The penetrant can reduce the surface tension of the cutting fluid, allowing it to easily penetrate between the diamond wire and the silicon wafer, thereby reducing mechanical damage to the silicon wafer. Furthermore, the emulsifier in the cutting fluid enables the various components to be more uniformly suspended in the aqueous phase, preventing stratification and improving the performance stability of the cutting fluid. Therefore, thanks to the synergistic effect of the various components, the performance of the cutting fluid of the present invention is improved, thereby increasing the efficiency of silicon wafer cutting.
[0131] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application. For example, the technical features described in one embodiment can be used in another embodiment to obtain further embodiments.
Claims
1. A water-based diamond wire cutting fluid for silicon wafers, characterized in that, Includes the following components by weight: 17%–40% of the dispersant is selected from polyether; 8%–18% lubricant; 3%–9% penetrant; 2% to 9% emulsifier; and the balance is deionized water.
2. The aqueous diamond wire silicon wafer cutting fluid according to claim 1, characterized in that, The polyether is selected from one or more of C4 alcohol-terminated ethylene oxide / propylene oxide block copolyethers and C6 alcohol-terminated ethylene oxide / propylene oxide block copolyethers.
3. The aqueous diamond wire silicon wafer cutting fluid according to claim 1, characterized in that, The lubricant is selected from castor oil polyoxyethylene ether.
4. The aqueous diamond wire silicon wafer cutting fluid according to claim 1, characterized in that, The penetrant is selected from diethylene glycol butyl ether.
5. The aqueous diamond wire silicon wafer cutting fluid according to claim 1, characterized in that, The emulsifier is selected from octadecylamine polyoxyethylene ether.
6. The aqueous diamond wire silicon wafer cutting fluid according to any one of claims 1-5, characterized in that, The aqueous diamond wire silicon wafer cutting fluid also includes the following components by weight: 0.2% to 0.6% of a chelating agent, selected from one or more of disodium ethylenediaminetetraacetate, sodium citrate, and sodium gluconate; 0.1% to 0.2% of an antibacterial agent, selected from sodium molybdate; 0.1% to 0.2% of a rust inhibitor, selected from one or more of MC tricarboxylic acid, sebacic acid, and dodecanoic acid; 1% to 4% of the defoamer is selected from silicone amides; A pH adjuster of 1% to 3% is selected from malonic acid; 0.4% to 2.5% of the extreme pressure agent is selected from one or more of sulfur-chlorinated cottonseed oil, dibutyl phosphite, and triethyl phosphate; and the balance is deionized water.
7. A method for preparing an aqueous diamond wire cutting fluid for silicon wafers, characterized in that, The method includes: Mix 17%–40% dispersant, 8%–18% lubricant, 3%–9% penetrant, 2%–9% emulsifier, and the remainder deionized water, and stir until homogeneous to obtain an aqueous diamond wire silicon wafer cutting fluid.
8. The preparation method according to claim 7, characterized in that, The method further includes: After stirring evenly, add 0.2%–0.6% chelating agent, 0.1%–0.2% antibacterial agent, 0.1%–0.2% rust inhibitor, 1%–4% defoamer, 1%–3% pH adjuster and 0.4%–2.5% extreme pressure agent, and stir evenly to obtain water-based diamond wire silicon wafer cutting fluid.