Process method for improving performance of beta-Ga2O3 device through low-energy proton irradiation

Abstract

The invention provides a process method for improving the performance of a beta-Ga2O3 device through low-energy proton irradiation, and relates to the technical field of electronic components, and the method comprises the following steps: carrying out low-energy proton irradiation on the basis of irradiation experiment parameters at a preset environment temperature; low-energy proton irradiation with different fluence is carried out on the beta-Ga2O3 Schottky diode in a preset incidence mode to determine irradiation process data, and in combination with deep level transient spectroscopy (DLTS) analysis and device simulation, defect evolution and a hydrogen passivation mechanism caused in a beta-Ga2O3 epitaxial layer after low-energy proton incidence are revealed. According to the method, the cognitive limitation that traditional radiation must cause performance degradation of devices is broken through, and the field of low-energy proton irradiation which is not fully researched is focused.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic components, in particular to a process method for improving the performance of a β-Ga2O3 device by low-energy proton irradiation. BACKGROUND

[0002] β-gallium oxide (β-Ga2O3) is a kind of ultra-wide bandgap semiconductor material, which has the advantages of high breakdown field and good thermal stability, and has broad application prospects in the field of high-power, high-frequency and radiation-resistant electronic devices. In particular, the demand for its Schottky diode is increasing in the fields of power electronics and space electronics.

[0003] In the space electronic application scenario, the device will be exposed to a low-energy proton radiation environment for a long time. However, there are still many deficiencies in the research on the electrical performance response and internal mechanism of β-Ga2O3 Schottky diode under low-energy proton irradiation. On the one hand, existing researches focus on the damage effect of high-energy proton irradiation on the device, and generally believe that radiation will cause degradation of the electrical performance of the device, but ignore the special performance changes that low-energy protons may cause. The physical mechanism behind the electrical performance of β-Ga2O3 Schottky diode under low-energy proton irradiation is not systematically explored. On the other hand, the traditional method of analyzing the electrical performance of the device often only observes the performance by electrical tests (such as I-V and C-V tests), which makes it difficult to reveal the internal relationship between low-energy protons and the electrical characteristics of the device, and it is also difficult to form a complete method from the design of irradiation parameters to the analysis of performance influence mechanism, which greatly limits the application of β-Ga2O3 Schottky diode in radiation resistance design and performance regulation. SUMMARY

[0004] The present application solves one or more of the above related technical problems.

[0005] To solve the above problems, the present application provides a process method for improving the performance of a β-Ga2O3 device by low-energy proton irradiation.

[0006] In a first aspect, the present application provides a process method for improving the performance of a β-Ga2O3 device by low-energy proton irradiation, comprising: Step S1, simulating the process of incidenting a preset low-energy proton into a β-Ga2O3 Schottky diode to obtain displacement energy loss spectrum and non-ionizing energy loss distribution data; Step S2, determining irradiation experiment parameters according to the displacement energy loss spectrum, and irradiating the β-Ga2O3 Schottky diode with different fluences of low-energy protons based on the irradiation experiment parameters and a preset incident mode at a preset environmental temperature to obtain the β-Ga2O3 Schottky diode after irradiation and irradiation process data. Step S3: Perform electrical tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain electrical performance data before and after irradiation; Step S4: Perform deep-level transient spectrum tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain the corresponding deep-level transient spectrum data and defect parameter data. Step S5: Based on the non-ionization energy loss distribution data, the electrical performance data before and after irradiation, the deep-level transient spectrum data, and the defect parameter data, the influence of low-energy protons on the electrical characteristics of the β-Ga2O3 Schottky diode is analyzed and verified to obtain the results.

[0007] Optionally, the preset low-energy protons include protons with an energy of 170 keV.

[0008] Optionally, the electrical performance data before and after irradiation includes current-voltage characteristic test data and capacitance-voltage characteristic test data before and after irradiation; the electrical tests performed on the β-Ga2O3 Schottky diode before and after irradiation to obtain the electrical performance data before and after irradiation include: The β-Ga2O3 Schottky diode was tested before and after irradiation within a preset first test voltage range to obtain the current-voltage characteristic test data before and after irradiation. The β-Ga2O3 Schottky diode was tested before and after irradiation within a preset second test voltage range to obtain the capacitor voltage characteristic test data before and after irradiation.

[0009] Optionally, the deep-level transient spectrum test is performed on the β-Ga2O3 Schottky diode before and after irradiation to obtain the corresponding deep-level transient spectrum data and defect parameter data, including: The scanning temperature range is determined, and the β-Ga2O3 Schottky diode is tested before and after irradiation based on the scanning temperature range to obtain the transient capacitance signals before and after irradiation at different temperatures. Based on the capacitor transient signals before and after irradiation at different temperatures, the corresponding deep-level transient spectrum data are obtained; The corresponding defect parameter data are determined based on the deep-level transient spectrum data before and after irradiation.

[0010] Optionally, the defect parameter data includes defect energy levels and defect trapping cross sections, and the step of determining the corresponding defect parameter data based on the deep-level transient spectrum data before and after irradiation includes: The transient spectrum data of the deep energy level before and after irradiation were analyzed to determine the corresponding first defect signal peak and second defect signal peak. For each first defect signal peak and the corresponding second defect signal peak, the Arrhenius equation is fitted to obtain the defect energy level and the defect trapping cross section corresponding to each first defect signal peak and the second defect signal peak.

[0011] Optionally, the defect parameter data may further include defect concentration; the defect concentration is determined by integrating the corresponding DLTS peak in the deep-level transient spectrum.

[0012] Optionally, step S3 further includes analyzing the carrier concentration of the drift layer in the β-Ga2O3 Schottky diode.

[0013] Optionally, in step S2, the irradiation process data includes the actual irradiation time, real-time temperature, real-time flux, and real-time bias voltage corresponding to different flux amounts.

[0014] Optionally, the preset incident mode includes a vertical incident mode.

[0015] Secondly, the present invention provides a process apparatus for improving the performance of β-Ga2O3 devices by low-energy proton irradiation, comprising: The simulation unit is used to simulate the process of protons incident on a β-Ga2O3 Schottky diode at a preset low energy level, and to obtain the displacement energy loss spectrum and non-ionization energy loss distribution data. The testing unit is used to determine the irradiation experimental parameters based on the displacement energy loss spectrum, and to irradiate the β-Ga2O3 Schottky diode with low-energy protons of different fluxes at a preset ambient temperature and based on the irradiation experimental parameters using a preset incident method, so as to obtain the irradiated β-Ga2O3 Schottky diode and irradiation process data. The processing unit is used to perform electrical tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain electrical performance data before and after irradiation; to perform deep-level transient spectrum tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain corresponding deep-level transient spectrum data and defect parameter data; and to analyze and verify the non-ionization energy loss distribution data, the electrical performance data before and after irradiation, the deep-level transient spectrum data, and the defect parameter data to obtain the influence of low-energy protons on the electrical characteristics of the β-Ga2O3 Schottky diode.

[0016] The beneficial effects of the low-energy proton irradiation process and apparatus for improving the performance of β-Ga2O3 devices according to the present invention are: This method breaks through the traditional understanding that radiation inevitably leads to device performance degradation. It focuses on the under-studied area of ​​low-energy proton irradiation. Through simulation in step S1, it obtains displacement energy loss spectrum and non-ionization energy loss distribution data, accurately determining the concentrated damage region of protons in the device. This provides theoretical guidance for the design of irradiation experimental parameters in step S2, avoiding blind parameter selection. In the experimental design, different fluxes are used as a single variable, maintaining consistent preset environmental temperature, incident mode, and other parameters. Combined with electrical tests in step S3 (such as obtaining current-voltage and capacitance-voltage data to quantify performance changes) and deep-level transient spectrum tests in step S4 (obtaining defect spectra and parameter data to reveal the essence of performance changes), a closed-loop verification from phenomenon to essence is formed. The entire process records simulation data, irradiation process data, and test data before and after irradiation. Direct comparison of devices before and after irradiation eliminates irrelevant interference factors, ensuring traceability and high reliability of the conclusions. Finally, step S5... Multi-data joint analysis clarifies the impact of low-energy protons on the electrical properties of devices. This can provide parameter basis for irradiation pretreatment for the performance regulation of β-Ga2O3 power devices (such as determining the optimal irradiation flux) and provide key technical support for the radiation-resistant design of space electronic devices (such as determining the tolerance flux range). It effectively solves the problems of lack of systematic methods for performance regulation of β-Ga2O3 devices under low-energy proton irradiation and lack of basis for space radiation-resistant design, laying the foundation for the application and promotion of β-Ga2O3 devices. Attached Figure Description

[0017] Figure 1 This is a schematic flowchart of a process for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to an embodiment of the present invention. Figure 2 This is a diagram showing the depth distribution of the β-Ga2O3 Schottky diode structure and non-ionizing energy loss according to an embodiment of the present invention. Figure 3 This is one of the schematic diagrams showing the electrical properties before and after irradiation in an embodiment of the present invention; Figure 4 This is a second schematic diagram showing the electrical properties before and after irradiation in an embodiment of the present invention. Figure 5 This is a schematic diagram of the deep-level transient spectrum and corresponding defect level of a β-Ga2O3 Schottky diode under 170 keV proton irradiation conditions according to an embodiment of the present invention. Detailed Implementation

[0018] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Although some embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the present invention. It should be understood that the accompanying drawings and embodiments of the present invention are for illustrative purposes only and are not intended to limit the scope of protection of the present invention.

[0019] It should be understood that the various steps described in the method embodiments of the present invention may be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present invention is not limited in this respect.

[0020] The term "comprising" and its variations as used herein are open-ended, meaning "including but not limited to"; the term "based on" means "at least partially based on"; the term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments"; and the term "optionally" means "optional embodiments". Definitions of other terms will be given in the description below. It should be noted that the concepts of "first," "second," etc., mentioned in this invention are used only to distinguish different devices, modules, or units, and are not intended to limit the order of functions performed by these devices, modules, or units or their interdependencies.

[0021] It should be noted that the terms "one" and "more" used in this invention are illustrative rather than restrictive. Those skilled in the art should understand that, unless otherwise expressly indicated in the context, they should be understood as "one or more".

[0022] The names of the messages or information exchanged between the multiple devices in the embodiments of the present invention are for illustrative purposes only and are not intended to limit the scope of these messages or information.

[0023] like Figure 1 As shown in the embodiment of the present invention, a process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation includes: Step S1, first, determine the structure of the device (β-Ga2O3 Schottky diode) (e.g.) Figure 2 (a) shows the structural schematic of a β-Ga2O3 Schottky diode and the thickness of each layer. The experiment used a tin doping concentration of 5 × 10⁻⁶. 18 cm -3A 10 µm thick silicon doped layer with a silicon doping concentration of 1×10⁻⁶ was grown on a 650 µm thick β-Ga₂O₃ (001) substrate via hydride vapor phase epitaxy. 16 cm -3 A β-Ga2O3 epitaxial layer was constructed. A nickel / gold anode metal electrode was deposited on the drift layer using resistance thermal evaporation, and a square Schottky contact electrode with a side length of 0.4 mm was fabricated through a lift-off process. On the back side of the substrate, a titanium / gold ohmic contact layer was deposited using the same resistance thermal evaporation method, followed by rapid thermal annealing at 500°C for 60 seconds in a nitrogen atmosphere. Radiation effect simulation software (such as ERETCAD, an application software developed for space environment effect research and spacecraft design, mainly used for radiation effect simulation calculations in complex space environments, realizing integrated simulation analysis of radiation effects of the entire satellite, materials, and devices, solving the problem of accurate analysis of radiation damage at any time and location on the spacecraft in orbit, including both precise simulation and rapid engineering evaluation modes) was used to model and simulate the displacement energy loss spectrum of a 170 keV proton-incident SBD device (β-Ga2O3 Schottky diode). Figure 2 (c) shows a schematic diagram of the depth distribution of non-ionizing energy loss. Figure 2 (b) is a schematic diagram of the simulated distribution of incident protons in a β-Ga2O3 Schottky diode (the upper layer is air; the middle layer is Au and Ni electrode layers; and the lower layer is a β-Ga2O3 epitaxial layer).

[0024] in, Figure 2 (b) Horizontal axis (Depth, μm): represents the penetration depth of protons in the device, extending from the electrode layer (Au-Ni) to the β-Ga2O3 epitaxial layer; Vertical axis (NIEL, MeV / cm): represents the non-ionizing energy loss per unit path length, reflecting the intensity of lattice atomic displacement damage induced by protons. The curve shows that the NIEL for 170 keV protons reaches its peak near the interface between the electrode layer (Au-Ni) and the β-Ga2O3 epitaxial layer (depth approximately 0.4-0.445 μm), indicating that this region is a concentrated area of ​​proton damage. This distribution provides a theoretical basis for the targeted analysis of the electrical performance changes of the drift layer (β-Ga2O3 epitaxial layer) in subsequent irradiation experiments, namely, that the energy loss of protons at this depth will induce lattice defects, thereby affecting the carrier transport characteristics of the device.

[0025] The process of protons incident on a β-Ga2O3 Schottky diode with preset low energy was simulated to obtain displacement energy loss spectrum and non-ionization energy loss distribution data.

[0026] Specifically, the simulation object and parameter input are as follows: the actual structure of the β-Ga2O3 Schottky diode (β-Ga2O3SBD) is used as the simulation model, and the key parameters of the device are input, including the substrate (Sn-doped β-Ga2O3 (001) substrate, concentration 5×10⁻⁶). 18 cm -3 (thickness 650 μm), epitaxial layer (such as Si-doped β-Ga2O3 drift layer, concentration 1×10⁻⁶), 16 cm -3 The electrode material and dimensions (e.g., Ni / Au anode, Ti / Au ohmic contact, electrode side length 0.4 mm) are set, along with the preset low energy (e.g., 170 keV) and incident mode (e.g., vertical incident) of the incident protons.

[0027] Simulation tools and methods: Radiation effect simulation software (such as ERETCAD) is used to simulate the transport process of protons inside the device based on the Monte Carlo algorithm, calculate the interaction between protons and lattice atoms, and distinguish between ionization energy loss (proton energy is converted into electronic excitation) and non-ionization energy loss (proton energy is converted into lattice atom displacement).

[0028] Data output: Generates two types of core data: displacement energy loss spectrum: reflects the energy loss distribution of protons at different depths of the device (the proportion of ionized and non-ionized); NIEL distribution data (non-ionized energy loss distribution data): presented as a depth-non-ionized energy loss value curve, quantifying the intensity of lattice displacement damage caused by protons at various depths of the device, and identifying the damage concentration area (e.g., the NIEL peak of 170 keV protons is located at 0.405 μm of the epitaxial layer).

[0029] The non-ionizing energy loss (NIEL) distribution data obtained through simulation can accurately locate the damage concentration region of protons in β-Ga2O3 Schottky diodes (such as the critical drift layer charge transport region), effectively avoiding the problem of misalignment between the damage region and the functional region of the device due to blindly selecting irradiation energy. This ensures that subsequent irradiation experiments can be targeted at the key layers affecting electrical performance, reducing the number of invalid experiments and significantly improving analysis efficiency. At the same time, the generated displacement energy loss spectrum can clearly distinguish the proportion of ionizing and non-ionizing losses in proton energy loss, clarifying the mechanism by which low-energy protons mainly cause lattice displacement defects through non-ionizing losses. This provides a basis for the deep-level transient spectrum defect testing in step S4 and step S5. The multi-data joint mechanism analysis provides a key theoretical foundation and helps to explain the intrinsic correlation between defect evolution and changes in electrical performance. In addition, the simulation results can provide a unified parameter design basis for irradiation experiments with different flux and batches (such as fixing the proton energy to ensure the consistency of the damage area), effectively reducing experimental errors caused by parameter fluctuations, making the subsequent comparison data of device performance before and after irradiation more reliable, and further improving the credibility of the overall analysis conclusions.

[0030] Step S2: Determine the irradiation experiment parameters based on the displacement energy loss spectrum, and at a preset ambient temperature, based on the irradiation experiment parameters, irradiate the β-Ga2O3 Schottky diode with low-energy protons of different fluxes using a preset incident method to obtain the irradiated β-Ga2O3 Schottky diode and irradiation process data.

[0031] Specifically, the irradiation experiment parameters are determined as follows: Based on the concentrated region of non-ionizing energy loss (NIEL) in the displacement energy loss spectrum (such as the drift layer of a β-Ga2O3 Schottky diode), the core parameters consistent with the simulation are locked, including: proton energy: a low energy preset in step S1 (such as 170 keV) is selected to ensure that the proton damage region matches the simulation results (concentrated in the drift layer); proton flux: set to a constant value (such as 10 keV). 11 p / (cm 2 •s)), maintain stability through the accelerator beam control system to avoid local overheating or uneven defect distribution caused by flux fluctuations; Irradiation flux gradient: set different fluxes based on analysis requirements (e.g., 1×10). 13 p / cm 2 1×10 14 p / cm 2 1×10 15 p / cm 2 The irradiation duration corresponding to each flux is precisely controlled using the formula: flux = flux × irradiation time (e.g., 1 × 10). 15 p / cm 2 (Corresponding to irradiation of 10,000 s).

[0032] Irradiation environment and incident mode control: Ambient temperature: Maintain a preset room temperature (e.g., 25℃), controlled by a constant temperature sample stage, with temperature fluctuations ≤ ±1℃, to avoid temperature changes affecting carrier mobility or defect evolution rate; Incident mode: Use a preset incident mode (optionally, the preset incident mode is a vertical incident mode), calibrating the angle between the sample stage and the proton beam using a laser collimator to ensure that the proton incident direction is consistent with the simulation model in step S1, ensuring the repeatability of damage distribution.

[0033] Real-time recording of irradiation process data can include actual irradiation time, real-time temperature (collected by thermocouples), real-time flux (collected by beam current monitor), and real-time bias voltage (e.g., 0 V, no external bias voltage) for each flux. After irradiation, β-Ga2O3 Schottky diodes treated with different fluxes are obtained, and the devices before irradiation are retained as control samples.

[0034] Based on the displacement energy loss spectrum obtained in step S1, the irradiation experimental parameters such as proton energy and flux are determined. This ensures that the irradiation damage is precisely applied to the key functional regions of the β-Ga2O3 Schottky diode (such as the drift layer of the charge transport core). This avoids both the potential structural damage caused by high-energy protons and the problem of deviation in the action area caused by low-energy protons, effectively solving the problem of insufficient targeting in traditional blind irradiation experiments. In terms of experimental design, by fixing parameters such as proton energy, ambient temperature, and incident method, and using only the irradiation flux as a single variable, the principle of single variable in scientific experiments is strictly followed. This ensures that the differences in subsequent changes in the electrical performance and defects of the device can be uniquely attributed to the difference in the low-energy proton flux, which is crucial for step S5. Conducting multi-data correlation analysis laid a reliable data foundation. Simultaneously, real-time recording of temperature fluctuations and flux deviations during irradiation clearly traces the potential impact of experimental conditions on the results. Standardized irradiation procedures, such as vertical incidence and isothermal control, ensure the reproducibility of results from different batches, significantly enhancing the versatility of this analytical method. Furthermore, by setting different flux gradients for irradiation experiments, a quantitative relationship between flux, damage, and performance can be established (e.g., at flux levels of 10...). 15 p / cm 2 When the carrier concentration in the device drift layer can be increased (the amount of increase), it provides specific and feasible parameter references for subsequent targeted optimization of the electrical performance of β-Ga2O3 Schottky diodes.

[0035] Step S3: Perform electrical tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain electrical performance data before and after irradiation.

[0036] Specifically, the test sample preparation is as follows: β-Ga2O3 Schottky diodes before and after irradiation (with different flux amounts) are fixed to the probe station sample holder. Electrical connections are formed between the probe and the Ni / Au anode and Ti / Au ohmic contact electrodes of the device, ensuring that the contact resistance is ≤1Ω (to avoid interference with the test results due to contact resistance).

[0037] A semiconductor parameter analyzer (such as Keysight B1500A) can be used to test β-Ga2O3 Schottky diodes before and after irradiation to determine electrical performance data before and after irradiation, such as current-voltage (IV) characteristic tests and capacitance-voltage (CV) characteristic tests.

[0038] By conducting standardized electrical tests (such as IV and CV tests) on β-Ga2O3 Schottky diodes before and after irradiation, the impact of low-energy proton irradiation on the device's electrical performance (such as increased forward current, decreased turn-on voltage, and changes in carrier concentration) can be directly quantified, providing intuitive data support for analyzing performance changes. Furthermore, standardized testing procedures (fixed voltage range, frequency, and number of repetitions) ensure the comparability of data before and after irradiation, avoiding result deviations caused by differences in testing conditions. Simultaneously, the obtained key parameters such as carrier concentration can be directly correlated with defect parameters (such as defect concentration) in subsequent step S4, providing a bridge for step S5 to reveal the intrinsic mechanism by which defect evolution affects electrical performance, making the analytical conclusions more convincing and scientific.

[0039] Step S4: Perform deep-level transient spectrum tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain the corresponding deep-level transient spectrum data and defect parameter data.

[0040] Specifically, the device before and after irradiation is fixed in the cryostat of the DLTS (Deep Level Transient Spectroscopy) testing system, and liquid nitrogen is introduced to maintain a stable test environment temperature. The scanning temperature range is set to 200 K-400 K (covering the target defect activation temperature range). The probe is connected to the anode and ohmic contact electrodes of the device to ensure a stable electrical path.

[0041] By using set test parameters, the β-Ga2O3 Schottky diodes before and after irradiation were scanned to obtain the corresponding deep-level transient spectrum data (DLTS spectrum data) and defect parameter data (such as concentration, energy level, trapping cross section, etc.).

[0042] By conducting standardized DLTS tests on β-Ga2O3 Schottky diodes before and after irradiation, we can directly obtain intuitive characteristics of defects (such as peak positions and intensities in the spectrum) and quantitative parameters (concentration, energy level, trapping cross section), accurately revealing the defect evolution law induced by low-energy proton irradiation (such as the decrease in E1 defect concentration and the change in E2 defect concentration), providing essential evidence at the defect level for analyzing changes in electrical performance. Furthermore, by using a unified temperature range, bias parameters, and data processing methods, we can ensure the comparability of defect data before and after irradiation, avoiding analytical biases caused by differences in test conditions. Simultaneously, the obtained defect parameters (such as deep-level trap concentration) can be directly correlated with the electrical performance data (such as carrier concentration and forward current) from step S3, forming a correspondence between defect change and performance response. This provides crucial experimental support for verifying the impact on electrical performance in step S5, enabling the entire analysis process to move from phenomenological observation to essential revelation, significantly enhancing the scientific rigor and persuasiveness of the conclusions.

[0043] Step S5: Based on the non-ionization energy loss distribution data, the electrical performance data before and after irradiation, the deep-level transient spectrum data, and the defect parameter data, the influence of low-energy protons on the electrical characteristics of the β-Ga2O3 Schottky diode is analyzed and verified to obtain the results.

[0044] Specifically, step S5 focuses on the core objective of the influence of low-energy protons on the electrical characteristics of β-Ga2O3 Schottky diodes, and integrates multi-dimensional data to conduct systematic analysis and verification. The specific process may include the following: First, organize the non-ionizing energy loss (NIEL) distribution data in step S1, the electrical performance data before and after irradiation in step S3 (IV / CV derived turn-on voltage, forward current density, carrier concentration, etc.), the DLTS spectrum data (defect peak position, intensity) and defect parameter data (defect concentration, energy level, trapping cross section) in step S4, and establish a four-dimensional data matrix of irradiation parameters, damage distribution, defect changes and electrical performance.

[0045] By combining NIEL distribution data (e.g., 170 keV proton damage is concentrated at 0.405 μm in the drift layer), the spatial consistency between the defect changes in step S4 (E1 / E2 defects are both located in the drift layer) and the electrical performance changes in step S3 (increased carrier concentration and increased forward current are both due to improved charge transport in the drift layer) is verified. This eliminates the interference of non-critical areas (such as substrate and electrodes) on performance and clarifies the core area of ​​damage.

[0046] By comparing data before and after irradiation, a quantitative relationship between defect parameters and electrical performance was established. For example, the concentration of E1 defects (Ec-0.46 eV) in the device before irradiation was 2.34 × 10⁻⁶ eV. 13 cm -3 The carrier concentration at that time was 1.26 × 10⁻⁶.16 cm -3 After irradiation, the E1 concentration decreased to 1.05 × 10⁻⁶. 13 cm -3 The carrier concentration increased to 1.63 × 10⁻⁶. 16 cm -3 The logic chain of deep-level trap reduction → carrier capture reduction → carrier concentration increase is verified. At the same time, the reason for the improvement of the ideal factor and the suppression of reverse leakage current is explained by combining the changes in the defect trapping cross section (such as the increase of the E2 trapping cross section) (the trap-assisted tunneling mechanism is weakened).

[0047] By integrating non-ionizing energy loss distribution data, electrical performance data, and defect-related data to conduct multi-dimensional correlation analysis, this approach overcomes the limitations of single data dimensions and avoids the one-sidedness of conclusions drawn solely from electrical performance or defect data. It verifies the effect of low-energy protons across the entire chain from damage location to defect change to performance response, ensuring the comprehensiveness of the conclusions. Furthermore, by quantifying data, it establishes clear causal logic (such as the synchronicity between the decrease in defect concentration and the increase in carrier concentration), deeply binding performance changes to the "essence of defect evolution," revealing the core mechanism by which low-energy protons affect the electrical characteristics of devices. This elevates the analytical conclusions from phenomenological descriptions to mechanistic explanations, significantly enhancing scientific rigor and persuasiveness. Simultaneously, the final output of flux-performance-mechanism conclusions provides direct technical support for the irradiation performance regulation (such as determining the optimal flux) and space radiation resistance design (such as the tolerance dose range) of β-Ga2O3 Schottky diodes, effectively transforming the analytical results into practical application guidance and fully demonstrating the practical value of this analytical method.

[0048] In this embodiment, the low-energy proton irradiation process for improving the performance of β-Ga2O3 devices breaks through the traditional understanding that radiation inevitably leads to device performance degradation. It focuses on the under-studied area of ​​low-energy proton irradiation, obtaining displacement energy loss spectrum and non-ionization energy loss distribution data through simulation in step S1 to accurately determine the concentrated damage region of protons in the device. This provides theoretical guidance for the design of irradiation experimental parameters in step S2, avoiding blind parameter selection. In the experimental design, different fluxes are used as a single variable, maintaining consistent preset ambient temperature, incident mode, and other parameters. Combined with electrical testing in step S3 (such as obtaining current-voltage and capacitance-voltage data to quantify performance changes) and deep-level transient spectrum testing in step S4 (obtaining defect spectra and parameter data to reveal the essence of performance changes), a closed-loop verification of phenomenon and essence is formed. The entire process records simulation data, irradiation process data, and test data before and after irradiation. Direct comparison of the device before and after irradiation eliminates irrelevant interference factors, ensuring traceability and high credibility of the conclusions. Finally, step S5... Multi-data joint analysis clarifies the impact of low-energy protons on the electrical properties of devices. This can provide parameter basis for irradiation pretreatment for the performance regulation of β-Ga2O3 power devices (such as determining the optimal irradiation flux) and provide key technical support for the radiation-resistant design of space electronic devices (such as determining the tolerance flux range). It effectively solves the problems of lack of systematic methods for performance regulation of β-Ga2O3 devices under low-energy proton irradiation and lack of basis for space radiation-resistant design, laying the foundation for the application and promotion of β-Ga2O3 devices.

[0049] Optionally, the preset low-energy protons include protons with an energy of 170 keV.

[0050] Optionally, in step S2, the irradiation process data includes the actual irradiation time, real-time temperature, real-time flux, and real-time bias voltage corresponding to different flux amounts.

[0051] Optionally, the electrical performance data before and after irradiation includes current-voltage characteristic test data and capacitance-voltage characteristic test data before and after irradiation; the electrical tests performed on the β-Ga2O3 Schottky diode before and after irradiation to obtain the electrical performance data before and after irradiation include: The β-Ga2O3 Schottky diode was tested before and after irradiation within a preset first test voltage range to obtain the current-voltage characteristic test data before and after irradiation. The β-Ga2O3 Schottky diode was tested before and after irradiation within a preset second test voltage range to obtain the capacitor voltage characteristic test data before and after irradiation.

[0052] Optionally, step S3 further includes analyzing the carrier concentration of the drift layer in the β-Ga2O3 Schottky diode.

[0053] In some embodiments, irradiation experiments were conducted on a space environment simulation platform under the following conditions: room temperature (approximately 25°C), vertical incidence without bias, and a flux of 10. 11 p / (cm 2 ·s), with a cumulative dose of 1×10 15 p / cm 2 After irradiation, the IV and CV characteristics of the measuring device were determined using an Agilent B1500A, such as... Figure 3 As shown, one of the schematic diagrams of the electrical properties before and after irradiation (Schematic diagram of IV characteristic curves before and after irradiation).

[0054] in, Figure 3 The horizontal axis (X-axis) represents voltage (V), ranging from -0.3 V to 1.5 V, covering the reverse small bias cutoff region (-0.3 V to 0 V) ​​and forward conduction region (0 V to 1.5 V) of the β-Ga2O3 Schottky diode. The step size is uniformly 0.01 V to ensure the continuity of the voltage scan. The vertical axis (Y-axis) represents current density (A / cm²). 2 ), using logarithmic coordinates (10) -7 ~10 -2 The magnitude of the current clearly shows the difference between low current (such as reverse leakage current) and high current (such as forward conduction current). The four curves correspond to four sets of irradiation doses, with the pre-irradiation (Pristine) and irradiation doses being 1×10⁻⁶ respectively. 13 p / cm 2 1×10 14 p / cm 2 1×10 15 p / cm 2 The corresponding curve.

[0055] pass Figure 3 It can be seen that the reverse cutoff characteristic is stable: in the reverse bias range of -0.3 V to 0 V, the current density of all curves is less than 10. -6 A / cm 2 Furthermore, there was no significant difference before and after irradiation, proving that 170 keV low-energy proton irradiation did not lead to an increase in the reverse leakage current of the device, thus ruling out the problem of radiation-induced reverse performance degradation.

[0056] Forward conduction performance increases with injection volume: Turn-on voltage decreases: Turn-on voltage of unirradiated devices (pre-irradiation devices) (forward current density reaches 10 -6 A / cm 2 The voltage at that time was approximately 0.6 V, after passing through a 1×10 15 p / cm 2 After dose irradiation, the turn-on voltage dropped to about 0.4 V, a decrease of about 33%, indicating that the device turn-on threshold was significantly reduced; Increased forward current density: Under the same forward bias (e.g., 1.0 V), the forward current density of an unirradiated device is approximately 1 × 10⁻⁶. -5 A / cm 2 1×10 15 p / cm 2 After irradiation, the injection dose increases to approximately 3 × 10⁻⁶. -5 A / cm 2 The increase reached 200%, and the current density increased in a stepwise manner with increasing irradiation dose (1×10). 13 p / cm 2 <1×10 14 p / cm 2 <1×10 15 p / cm 2 This demonstrates that low-energy proton irradiation has a flux-dependent effect on improving the forward conduction capability of devices.

[0057] Figure 4 It is used to analyze the capacitance-voltage (CV) characteristics and the reciprocal of the square of capacitance-voltage (1 / C) of a β-Ga2O3 Schottky diode before and after low-energy proton irradiation. 2 A comparison chart of the -V (capacitance-derived characteristic) characteristics includes the following key information: Figure 4 :1 / C 2 -V Characteristic Curve (Capacitance-Derived Characteristic): Axis and Data Dimensions: Horizontal Axis (X-axis): Voltage (V), ranging from -5 V to 0 V, representing the reverse bias range. This range covers the critical period for the formation and change of the depletion layer in a β-Ga2O3 Schottky diode. The depletion layer width can be controlled by the bias voltage, allowing the deduction of carrier concentration. Vertical Axis (Y-axis): 1 / C 2 (The reciprocal of the square of capacitance, in F) -2 This data is calculated from the raw data of the CV (capacitance-voltage) test, that is, by measuring the capacitance value (C) at different reverse bias voltages at a frequency of 1 MHz, and further calculating 1 / C. 2 This is used to derive the carrier concentration in the drift layer.

[0058] Curve indicator: with Figure 3 The IV curves are consistent, with the four curves corresponding to four different irradiation doses, ensuring that the IV data at the same dose is consistent with the 1 / C curve. 2 -V data can be directly associated.

[0059] pass Figure 4 It can be seen that: all 1 / C 2 The -V curve is approximately a straight line in the -5 V to 0 V range, consistent with the depletion layer capacitance theory of an n-type semiconductor Schottky diode (1 / C). 2 The test data shows a linear relationship with the reverse bias voltage, proving that the test data is reliable and there is no obvious noise interference.

[0060] Carrier concentration increases with flux: According to the traditional formula for carrier concentration, the smaller the absolute value of the curve slope, the higher the carrier concentration. The calculated carrier concentration in the drift layer of the unirradiated device is determined to be 1.26 × 13 cm -3 After 1×10 15 p / cm 2 After dose irradiation, the absolute value of the slope decreased, and the carrier concentration increased to 1.63 × 10⁻⁶. 16 cm -3 The improvement was approximately 29.4%; and the absolute value of the slope gradually decreased with the increase of irradiation flux, proving that low-energy proton irradiation reduces carrier trapping by passivating deep-level defects, thereby achieving targeted optimization of carrier concentration.

[0061] 1 / C 2 (Right vertical axis) Changes with reverse bias: 1 / C 2 The linear relationship with the reverse bias voltage, and the good linearity, indicate that the β-Ga2O3 epitaxial layer is uniformly doped. With increasing irradiation flux, 1 / C... 2 The slope of the -V curve gradually decreases. A smaller slope indicates a higher carrier concentration. Therefore, low-energy proton irradiation can effectively increase the carrier concentration in the drift layer of a β-Ga₂O₃ Schottky diode, and the carrier concentration increases with increasing irradiation flux.

[0062] That is, the diagram ( Figure 4 This study intuitively and quantitatively demonstrates the effects of low-energy proton irradiation on the capacitance characteristics and carrier concentration of β-Ga2O3 Schottky diodes. It proves that within a certain flux range, low-energy proton irradiation can significantly improve the carrier concentration of the device through mechanisms such as passivation of deep-level defects, providing key experimental data support for subsequent analysis of the physical mechanisms that enhance the electrical performance of the device.

[0063] It should be noted that in the field of semiconductor irradiation, ions / cm -2 and p / cm 2 (Here, 'p' is usually an abbreviation for protons.) These represent the same physical quantity, with essentially the same unit; only the expression conventions differ slightly. That is, 1 × 10⁻⁶. 15 ions / cm -2 In this context, "ions" explicitly refers to ions, and in the low-energy proton irradiation scenario of this embodiment, it refers to protons; 1×10 15 p / cm 2 In this context, p is an abbreviation for proton, and cm is an abbreviation for proton. 2 It is a unit of area, and its full meaning is 1 × 10⁻⁶ per square centimeter. 15Each proton. The physical meanings of both are completely identical, both describing the number of incident protons per unit area. They are different ways of expressing the same quantity and can be considered equivalent in technical terms.

[0064] Optionally, the deep-level transient spectrum test is performed on the β-Ga2O3 Schottky diode before and after irradiation to obtain the corresponding deep-level transient spectrum data and defect parameter data, including: The scanning temperature range is determined, and the β-Ga2O3 Schottky diode is tested before and after irradiation based on the scanning temperature range to obtain the transient capacitance signals before and after irradiation at different temperatures. Based on the capacitor transient signals before and after irradiation at different temperatures, the corresponding deep-level transient spectrum data are obtained; The corresponding defect parameter data are determined based on the deep-level transient spectrum data before and after irradiation.

[0065] Optionally, the defect parameter data includes defect energy levels and defect trapping cross sections, and the step of determining the corresponding defect parameter data based on the deep-level transient spectrum data before and after irradiation includes: The transient spectrum data of the deep energy level before and after irradiation were analyzed to determine the corresponding first defect signal peak and second defect signal peak. For each first defect signal peak and the corresponding second defect signal peak, the Arrhenius equation is fitted to obtain the defect energy level and the defect trapping cross section corresponding to each first defect signal peak and the second defect signal peak.

[0066] Optionally, the defect parameter data may further include defect concentration; the defect concentration is determined by integrating the corresponding DLTS peak in the deep-level transient spectrum.

[0067] In some embodiments, the scanning temperature range is determined to be 200 K–400 K, which covers the activation temperature range of the target defects (E1 and E2 defects) in the β-Ga2O3 Schottky diode. Based on this range, the device (β-Ga2O3 Schottky diode) before irradiation and after 170 keV low-energy proton irradiation (flux of 1 × 10⁻⁶ K) were compared. 13 p / cm 2 1×10 14 p / cm 2 1×10 15 p / cm 2The device was then tested. During the test, a reverse bias voltage UR = -5 V (to maintain the device in a depleted state), a pulse bias voltage UP = -0.1 V (to fill defect traps), a pulse width TP = 1 ms (to ensure that defects fully capture charge carriers), and a measurement period of 1.024 s (to fully record the charge carrier release process) were applied to obtain the transient capacitance signals before and after irradiation at different temperatures.

[0068] Capacitive transient signals at different temperatures are processed to generate deep-level transient spectrum (DLTS) data (such as...). Figure 5 (Left-side schematic diagram) Schematic diagram of DLTS spectra before and after irradiation. Through Figure 5 (Left schematic diagram) The first defect signal peak (E1 peak) near 325 K and the second defect signal peak (E2 peak) near 370 K can be observed in the DLTS spectrum of the device before irradiation; after 1×10 15 p / cm 2 After flux irradiation, the intensity of the E1 peak decreased significantly, while the intensity of the E2 peak increased. These spectral data intuitively reflect the distribution and changes of defects.

[0069] The process of determining defect parameter data: determine the first and second defect signal peaks and fit the defect energy level and capture cross section.

[0070] The transient spectrum data of deep-level energy levels before and after irradiation were analyzed to identify the first defect signal peak (E1 peak) and the second defect signal peak (E2 peak) before irradiation and under different irradiation fluxes. Then, multiple sets of defect peak temperatures were obtained by changing the test time window (e.g., 0.1 ms, 1 ms, 10 ms). For each first defect signal peak and its corresponding second defect signal peak, the Arrhenius equation was fitted (e.g.,...). Figure 5 (Schematic diagram on the right) Schematic diagram of the Arrhenius fitting results of DLTS. Taking the E1 peak of the device before irradiation as an example, the fitting yielded a defect energy level of Ec-0.46 eV and a defect trapping cross section of 5.83 × 10⁻⁶ eV. -19 cm 2 ; after 1×10 15 p / cm 2 After flux irradiation, the defect trapping cross section of the E1 peak became 6.76 × 10⁻⁶. -19 cm 2 The defect trapping cross section of the E2 peak becomes 2.10 × 10⁻⁶. -18 cm 2 .

[0071] The defect concentration was determined by integrating the DLTS peak in the deep-level transient spectrum. For example, the E1 defect concentration of the device before irradiation was 2.34 × 10⁻⁶. 13 cm -3 The E2 defect concentration is 3.37 × 10⁻⁶.12 cm -3 ; after 1×10 15 p / cm 2 After flux irradiation, the E1 defect concentration decreased to 1.05 × 10⁻⁶. 13 cm -3 The E2 defect concentration increased to 1.17 × 10⁻⁶. 13 cm -3 .

[0072] in, Figure 5 (Left schematic diagram) Deep Level Transient Spectrum (DLTS) before and after irradiation (Schematic diagram of DLTS spectrum before and after irradiation), coordinate axis: horizontal axis is temperature (K), range 200 K-400 K, covering the activation temperature range of the target defect; vertical axis is capacitance change ΔC (pF), reflecting the capacitance response caused by defect capture / release of charge carriers.

[0073] Curve labeling: The gray dotted curve represents the β-Ga2O3 Schottky diode before irradiation (Pristine), and the red dotted curve represents the diode after 1×10⁻⁶ irradiation. 15 p / cm 2 Devices irradiated with low-energy protons.

[0074] Defect Peak and Concentration Analysis: The figure clearly identifies two defect peaks: the E1 peak (around 325 K) and the E2 peak (around 370 K). In the device before irradiation, the E1 defect concentration N... T =2.34×10 13 cm -3 E2 defect concentration N T =3.37×10 12 cm -3 ; after 1×10 15 p / cm 2 After irradiation, the E1 defect concentration decreased to N. T =1.05×10 13 cm -3 E2 defect concentration rises to N T =1.17×10 13 cm -3 This indicates that low-energy proton irradiation induced defect reconstruction (reduction of E1 defects and increase of E2 defects).

[0075] Figure 5 (Schematic diagram on the right) Schematic diagram of the Arrhenius fitting results of DLTS, coordinate axis: horizontal axis is 1 / (kT) (eV) -1 (where k is Boltzmann's constant and T is absolute temperature), the vertical axis is... (V is the trap lifespan) th N represents the velocity of thermal motion. C(This represents the effective density of states in the conduction band), used to derive defect energy levels.

[0076] Curve markings: Gray dots / circles represent devices before irradiation, red triangles / inverted triangles represent devices after 1×10⁻⁶ irradiation. 15 p / cm 2 Devices after irradiation.

[0077] - Defect energy level analysis: Through linear fitting, the energy levels of E1 defects in the device before and after irradiation were obtained as E... C -0.46 eV, the energy level of the E2 defect is E C - 0.60 eV (E C (Conduction band bottom). The defect energy levels did not shift before and after irradiation, indicating that the defect type did not change, only the number and characteristics of defects (such as the trapping cross section) changed.

[0078] Figure 5 (The diagram on the right) intuitively and quantitatively demonstrates the effect of low-energy proton irradiation on deep-level defects in a β-Ga2O3 Schottky diode: after irradiation, the concentration of E1 deep-level defects (harmful traps) decreases, the concentration of E2 defects increases, and both energy levels remain stable (both are V). Ga Related defects). Combined with electrical performance test data, it can be verified that low-energy proton irradiation reconstructs defects through hydrogen-assisted defects (forming V). Ga The -nH complex passivates the E1 deep level trap, reduces carrier trapping, and thus improves the electrical performance of the device, providing direct defect-level evidence for the core mechanism of "low-energy proton irradiation-defect evolution-performance enhancement".

[0079] Through the above process, we can accurately and comprehensively obtain deep-level defect information of β-Ga2O3 Schottky diodes before and after low-energy proton irradiation. This allows for intuitive observation of defect distribution and trends from deep-level transient spectral data, and further reveals the evolutionary laws of defects through quantified defect parameters (energy level, trapping cross section, concentration). This information can then be correlated with electrical performance data to clarify how low-energy proton irradiation facilitates hydrogen-assisted defect reconstruction (such as V2). Ga The core mechanism of passivating deep-level traps and improving the electrical performance of devices (formation of -nH complexes) provides a complete analytical chain from the nature of defects to performance for the irradiation performance regulation and space radiation-resistant design of β-Ga2O3 devices, greatly improving the scientific nature and application guidance of the conclusions.

[0080] For step S5, which focuses on the impact of low-energy protons on the electrical characteristics of β-Ga2O3 Schottky diodes, multi-dimensional data is integrated for analysis and verification. The specific process is as follows: Data association foundation construction: Organize the non-ionizing energy loss (NIEL) distribution data of step S1 (e.g., 170 keV proton damage is concentrated at 0.405 μm of the drift layer), the electrical performance data before and after irradiation of step S3 (e.g., turn-on voltage, forward current density, carrier concentration), and the deep level transient spectrum (DLTS) spectrum data (defect peak position, intensity) and defect parameter data (defect concentration, energy level, trapping cross section) of step S4, and establish a four-dimensional data matrix of "irradiation parameters - damage distribution - defect change - electrical performance".

[0081] Correlation analysis between damaged area and defects / performance: Combining NIEL distribution data, the spatial consistency between the defect changes in step S4 (both E1 and E2 defects are located in the drift layer) and the electrical performance changes in step S3 (increased carrier concentration and increased positive current are both due to improved charge transport in the drift layer) was verified, clarifying that the core region of damage is the drift layer.

[0082] Quantitative Correlation between Defect Evolution and Electrical Performance: By comparing data before and after irradiation, a quantitative relationship between defect parameters and electrical performance is established. For example, before irradiation, the carrier concentration of the device with defect E1 was 1.26 × 13 cm -3 After irradiation, the E1 concentration decreased to 1.05 × 10⁻⁶. 13 cm -3 The carrier concentration increased to 1.63 × 10⁻⁶. 16 cm -3 The logic chain of deep-level trap reduction → carrier capture reduction → carrier concentration increase is verified. At the same time, the reason for the improvement of the ideal factor and the suppression of reverse leakage current is explained by the change of defect trapping cross section (the trap-assisted tunneling mechanism is weakened).

[0083] Comprehensive analysis verifies the core mechanism by which low-energy protons affect electrical properties, namely, the interaction between hydrogen atoms introduced by proton incident and V. Ga Acceptor-type defects combine to form V Ga -nH complexes induce defect reconstruction (evolution from E1 to E2) and passivate deep-level traps, ultimately improving electrical performance; forming influence trends (positive correlation between flux and performance) and key thresholds (such as 1×10). 15 p / cm 2 The conclusions on optimal flux performance and complete mechanism of action were obtained, clarifying the specific impact of low-energy protons on the electrical properties of the device.

[0084] This invention provides an apparatus for improving the performance of β-Ga2O3 devices through low-energy proton irradiation, comprising: The simulation unit is used to simulate the process of protons incident on a β-Ga2O3 Schottky diode at a preset low energy level, and to obtain the displacement energy loss spectrum and non-ionization energy loss distribution data. The testing unit is used to determine the irradiation experimental parameters based on the displacement energy loss spectrum, and to irradiate the β-Ga2O3 Schottky diode with low-energy protons of different fluxes at a preset ambient temperature and based on the irradiation experimental parameters using a preset incident method, so as to obtain the irradiated β-Ga2O3 Schottky diode and irradiation process data. The processing unit is used to perform electrical tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain electrical performance data before and after irradiation; to perform deep-level transient spectrum tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain corresponding deep-level transient spectrum data and defect parameter data; and to analyze and verify the non-ionization energy loss distribution data, the electrical performance data before and after irradiation, the deep-level transient spectrum data, and the defect parameter data to obtain the influence of low-energy protons on the electrical characteristics of the β-Ga2O3 Schottky diode.

[0085] While the present invention has been disclosed above, its scope of protection is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, and all such changes and modifications will fall within the scope of protection of the present invention.

Claims

1. A process for improving the performance of β-Ga2O3 devices by low-energy proton irradiation, characterized in that, include: Step S1: Simulate the process of protons of preset low energy incident on β-Ga2O3 Schottky diode to obtain displacement energy loss spectrum and non-ionization energy loss distribution data; Step S2: Determine the irradiation experiment parameters based on the displacement energy loss spectrum, and irradiate the β-Ga2O3 Schottky diode with low-energy protons at different fluxes under a preset ambient temperature and based on the irradiation experiment parameters using a preset incident method, to obtain the irradiated β-Ga2O3 Schottky diode and irradiation process data. Step S3: Perform electrical tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain electrical performance data before and after irradiation; Step S4: Perform deep-level transient spectrum tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain the corresponding deep-level transient spectrum data and defect parameter data. Step S5: Based on the non-ionization energy loss distribution data, the electrical performance data before and after irradiation, the deep-level transient spectrum data, and the defect parameter data, the influence of low-energy protons on the electrical characteristics of the β-Ga2O3 Schottky diode is analyzed and verified to obtain the results.

2. The process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to claim 1, characterized in that, The preset low-energy protons include protons with an energy of 170 keV.

3. The process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to claim 2, characterized in that, The electrical performance data before and after irradiation includes current-voltage characteristic test data and capacitance-voltage characteristic test data before and after irradiation; the electrical tests performed on the β-Ga2O3 Schottky diode before and after irradiation to obtain the electrical performance data before and after irradiation include: The β-Ga2O3 Schottky diode was tested before and after irradiation within a preset first test voltage range to obtain the current-voltage characteristic test data before and after irradiation. The β-Ga2O3 Schottky diode was tested before and after irradiation within a preset second test voltage range to obtain the capacitor voltage characteristic test data before and after irradiation.

4. The process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to claim 2, characterized in that, The deep-level transient spectrum of the β-Ga2O3 Schottky diode before and after irradiation was measured to obtain the corresponding deep-level transient spectrum data and defect parameter data, including: The scanning temperature range is determined, and the β-Ga2O3 Schottky diode is tested before and after irradiation based on the scanning temperature range to obtain the transient capacitance signals before and after irradiation at different temperatures. Based on the capacitor transient signals before and after irradiation at different temperatures, the corresponding deep-level transient spectrum data are obtained; The corresponding defect parameter data are determined based on the deep-level transient spectrum data before and after irradiation.

5. The process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to claim 4, characterized in that, The defect parameter data includes defect energy levels and defect trapping cross sections. Determining the corresponding defect parameter data based on the deep-level transient spectrum data before and after irradiation includes: The transient spectrum data of the deep energy level before and after irradiation were analyzed to determine the corresponding first defect signal peak and second defect signal peak. For each first defect signal peak and the corresponding second defect signal peak, the Arrhenius equation is fitted to obtain the defect energy level and the defect trapping cross section corresponding to each first defect signal peak and the second defect signal peak.

6. The process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to claim 5, characterized in that, The defect parameter data also includes defect concentration; the defect concentration is determined by integrating the corresponding DLTS peak in the deep energy level transient spectrum.

7. The process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to claim 1, characterized in that, Step S3 further includes: analyzing the carrier concentration of the drift layer in the β-Ga2O3 Schottky diode.

8. The process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to claim 1, characterized in that, In step S2, the irradiation process data includes the actual irradiation time, real-time temperature, real-time flux, and real-time bias voltage corresponding to different flux amounts.

9. The process method for improving the performance of β-Ga2O3 devices by low-energy proton irradiation according to claim 1, characterized in that, The preset incident mode includes a vertical incident mode.

10. A device for improving the performance of β-Ga2O3 devices by low-energy proton irradiation, characterized in that, include: The simulation unit is used to simulate the process of protons incident on a β-Ga2O3 Schottky diode at a preset low energy level, and to obtain the displacement energy loss spectrum and non-ionization energy loss distribution data. The testing unit is used to determine the irradiation experimental parameters based on the displacement energy loss spectrum, and to irradiate the β-Ga2O3 Schottky diode with low-energy protons of different fluxes at a preset ambient temperature and based on the irradiation experimental parameters using a preset incident method, so as to obtain the irradiated β-Ga2O3 Schottky diode and irradiation process data. The processing unit is used to perform electrical tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain electrical performance data before and after irradiation; to perform deep-level transient spectrum tests on the β-Ga2O3 Schottky diode before and after irradiation to obtain corresponding deep-level transient spectrum data and defect parameter data; and to analyze and verify the non-ionization energy loss distribution data, the electrical performance data before and after irradiation, the deep-level transient spectrum data, and the defect parameter data to obtain the influence of low-energy protons on the electrical characteristics of the β-Ga2O3 Schottky diode.

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