Thin film lithium niobate lattice regulation and control method based on multi-field coupling annealing window optimization

Abstract

The invention relates to the technical field of semiconductors, in particular to a thin-film lithium niobate lattice regulation and control method based on multi-field coupling annealing window optimization, which specifically comprises the following steps: extracting initial polarization distribution characteristics of thin-film lithium niobate; inputting into a double-layer potential well analysis module to obtain an interface-surface layer double-layer potential well slow release model consisting of an interface potential well layer and a surface layer potential well layer; meanwhile, defining a polarization controllable region range; inputting the polarization controllable region range into an annealing window planning module to form a multi-field coupling annealing window sequence; inputting into an actual annealing device, and loading and executing a corresponding temperature field, bias field intensity and stress field at the same time; dynamically monitoring and recording the polarization response curve group at the same time to obtain polarization evolution monitoring data; window calibration is carried out according to the polarization deviation vectors of the multiple fields, and the calibrated multi-field coupling annealing window sequence is executed again after window calibration is completed. The problems that in the prior art, film lithium niobate lattice distortion release is not uniform, and polarization overturning stability is reduced are solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology and is a method for lattice control of thin-film lithium niobate based on multi-field coupling annealing window optimization. Background Technology

[0002] In the ultrathinning (less than 300 nm) fabrication of thin-film lithium niobate (LiNbO3), existing lattice control methods face severe challenges due to the inherent spontaneous polarization characteristics coupled with interface effects. Excessive depth of the interface potential well locks the polarization reversal path, preventing the formation of a stable, controllable sensitive region. Random rearrangement of surface bound charges and interfacial mismatch stress jointly induce polarization fly-throughs and non-local amplification phenomena, resulting in spatial discontinuities and temporal instabilities in the polarization distribution. Especially in multi-field coupled annealing processes, the design of traditional annealing windows relies on the segmented application of temperature, bias, and stress fields. However, the dominant role of the interface potential well in ultrathin films weakens the effectiveness of external field control, resulting in the inability to precisely lock polarization behavior in the mid-temperature field window. The polarization reversal process is decoupled from time-series control and is instead constrained by the irreversible deep interface potential. In addition, the discontinuous barrier gradient between the interface layer and the surface layer causes abnormal movement speed of the polarization reversal front, exacerbates local asymmetry, and leads to uneven release of lattice distortion. Ultimately, this results in polarization direction drift, decreased reversal stability, and device performance degradation. These problems severely restrict the reliability and accuracy of thin-film lithium niobate in integrated photonics applications such as high-speed electro-optic modulators and nonlinear optical devices. Summary of the Invention

[0003] The purpose of this section is to outline some aspects of embodiments of the present invention and to briefly describe some preferred embodiments. Simplifications or omissions may be made in this section, as well as in the abstract and title of this application, to avoid obscuring the purpose of these documents; however, such simplifications or omissions should not be construed as limiting the scope of the invention.

[0004] This invention solves the problems of uneven lattice distortion release and decreased polarization reversal stability in the prior art, and proposes a lattice control method for thin-film lithium niobate based on multi-field coupling annealing window optimization.

[0005] To achieve the above objectives, the technical solution of the present invention, based on multi-field coupled annealing window optimization, for lattice control of thin-film lithium niobate includes the following: S1: Perform surface rearrangement treatment on the contact interface between the thin film lithium niobate and the substrate, and extract the initial polarization distribution characteristics of the thin film lithium niobate. S2: Input the initial polarization distribution characteristics into the double-layer potential well analytical module to obtain the interface-surface double-layer potential well slow-release model composed of the interface potential well layer and the surface potential well layer. Simultaneously, the polarization controllable region range was delineated on thin-film lithium niobate based on the interface-surface double-layer potential well slow-release model. S3: Input the polarization controllable region range into the annealing window planning module. Based on the slow-release characteristics of the interface potential well layer and the surface potential well layer, divide the mid-temperature field window into a three-segment window time series. Then, through the serialized window combination, form a multi-field coupled annealing window sequence. S4: Input the multi-field coupled annealing window sequence into the actual annealing device, and simultaneously load the corresponding temperature field, bias field strength and stress field and execute it; During execution, the polarization response curve set is dynamically monitored and recorded to obtain polarization evolution monitoring data; S5: Based on polarization evolution monitoring data, perform window calibration according to the calculated polarization deviation vector of multiple fields, and execute the calibrated multi-field coupled annealing window sequence again after the window calibration is completed.

[0006] Preferably, S1 includes: S11: Perform initial inspection and pre-cleaning on the lithium niobate thin film sample after epitaxy is completed, and simultaneously output the initial state record data of the interface. S12: Based on the initial state data of the interface, perform directional chemical bond relaxation on the interface layer; S13: After the interface relaxation is completed, the surface bound charges are rearranged and the surface is smoothed to obtain the interface-surface potential well slow release structure, and the interface-surface potential well slow release structure characteristics are output simultaneously. S14: Based on the interface-surface potential well slow-release structure characteristics, the polarization characteristics of the interface region and the surface region in the thin film lithium niobate are extracted and compared. The polarization characteristics that are qualified by comparison are used as the initial polarization distribution characteristics for output.

[0007] Preferably, S2 includes: S21: Input the initial polarization distribution characteristics into the interface analysis unit in the double-layer potential well analysis module to extract the basic parameters of the interface potential well weakening degree. Simultaneously, the interface stress gradient characteristics are recorded, and combined with the initial polarization distribution characteristics, a set of basic parameters for interface layer potential well weakening is formed. S22: Input the basic parameter set of the interface layer potential well weakening into the interface potential well modeling unit, construct the interface potential well layer, and output the structural features of the interface potential well layer simultaneously. S23: Input the structural features of the interface potential well layer into the surface potential well building unit, and construct the surface potential well layer by superimposing it with the surface bound charges through rearrangement. By coupling the surface potential well layer and the interface potential well layer into two potential wells, a two-layer potential well slow-release model of interface-surface potential well is obtained.

[0008] S24: Based on the interface-surface double-layer potential well slow-release model, the variation characteristics of the potential well gradient, the continuity characteristics of the energy barrier distribution from the interface to the surface, and the characteristics of whether the polarization fly-through is locked in the surface are analyzed. Then, the range of the polarization controllable region is delineated on the thin film lithium niobate.

[0009] Preferably, S3 includes: S31: Input the polarization controllable region into the window parameter analysis unit, extract three physical segments, and generate the primary boundary of each window sequence according to the position distribution, the trend of potential well gradient change, and the movable interval of the polarization reversal path. At the same time, analyze the polarization response intensity of each window sequence to obtain the polarization response intensity ratio matrix, and output the primary parameter set of the window by combining the primary boundary of each window sequence.

[0010] S32: Based on the initial parameter set of the window, perform time series generation processing of the functional partition window to obtain a three-segment window time series; S33: Based on a three-segment window time series, the temperature-bias field strength-stress synergistic curve is generated and processed, and a multi-field coupling window curve group is obtained by aligning the time coordinates. S34: Based on the multi-field coupling window curve group, generate the annealing window execution sequence to obtain the multi-field coupling annealing window sequence.

[0011] Preferably, S4 includes: S41: Based on the multi-field coupled annealing window sequence, the execution environment is initialized and quantized to obtain the annealing execution initialization parameter set; S42: Based on the annealing execution initialization parameter set, perform temperature-bias field strength-stress three-field coupled loading processing, and record the real-time execution status of the annealing equipment to synchronously form a real-time execution status matrix.

[0012] S43: Input the real-time execution state matrix into the polarization monitoring module, generate three sets of polarization response curves by monitoring the polarization reversal trajectory, and output them synchronously as a set of polarization response curves; S44: Based on the polarization response curve set, evaluate the annealing window execution deviation and generate polarization evolution monitoring data.

[0013] Preferably, S5 includes: S51: Based on polarization evolution monitoring data, calculate the directional deviations of the three regions—interface layer, transition region, and surface layer—to form a polarization deviation vector; S52: Based on the polarization deviation vector, construct a multi-field adjustment matrix to generate the adjustment vector; S53: Based on the multi-field adjustment matrix and adjustment vector, perform annealing window calibration and execution sequence generation to obtain the calibrated multi-field execution sequence; S54: Based on the calibrated multi-field execution sequence, perform final execution and evaluation processing to obtain lattice-controlled final state data.

[0014] Compared with the prior art, the technical effects of the present invention are as follows: 1. This invention constructs a potential well gradient that transitions continuously from the interface to the surface by relaxing chemical bonds at the interface and rearranging bound charges on the surface. This transforms the polarization reversal path from the original uncontrollable behavior such as leaping and non-local amplification to a continuous and directional movement within the polarization controllable region. This significantly improves the uniformity and directional consistency of polarization reversal, achieving the polarization control accuracy required for device-level applications. 2. This invention achieves phased control of interface layer relaxation, surface polarization initialization and lattice distortion release through the precise coordination of three-stage windows: high temperature weak field, medium temperature medium field and low temperature stress. This enables the medium temperature medium field window to effectively lock the surface polarization behavior, solves the problem of mismatch between polarization response and annealing window in traditional methods, significantly improves polarization reversal stability and effectively suppresses the residual potential well at the interface. 3. Based on the dynamic calibration mechanism of polarization evolution monitoring data, this invention realizes real-time closed-loop control of temperature field, bias field and stress field by constructing polarization deviation vector and multi-field adjustment matrix, so that lattice distortion is released in a controllable manner, and finally a thin film lithium niobate final state with complete polarization locking, complete release of interface potential and highly uniform lattice structure is formed, which greatly improves the crystal quality and electro-optic performance reliability of the thin film. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein: Figure 1 This is a schematic flowchart of the thin-film lithium niobate lattice control method based on multi-field coupling annealing window optimization according to the present invention. Detailed Implementation

[0016] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0017] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0018] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that is mutually exclusive with other embodiments.

[0019] Example 1

[0020] like Figure 1 As shown in the figure, the thin-film lithium niobate lattice control method based on multi-field coupling annealing window optimization in this invention is as follows: Figure 1 As shown, it includes the following: S1: Perform surface rearrangement treatment on the contact interface between the thin film lithium niobate and the substrate, and extract the initial polarization distribution characteristics of the thin film lithium niobate. S1 includes: S11: Perform initial inspection and pre-cleaning on the lithium niobate thin film sample after epitaxy is completed, and simultaneously output the initial state record data of the interface. The preliminary inspection includes: preliminary inspection of interface cleanliness, preliminary inspection of interface roughness, preliminary inspection of interface bound charge density, preliminary inspection of interface micro-region morphology, and preliminary inspection of surface particle residue. The pre-cleaning process includes: weak plasma removal of adsorbed residues and solvent rinsing to remove loose contaminants. The interface stability was confirmed by surface energy measurement after pretreatment. S12: Based on the initial state data of the interface, perform directional chemical bond relaxation on the interface layer; The directional chemical bond relaxation treatment performed on the interface layer includes: moderate thermal activation to promote bond angle adjustment, using mild ion flow to change the interface bonding stress distribution, and releasing local constraints caused by partial interface mismatch. The purpose of performing directional chemical bond relaxation on the interface layer is to gradually transition the depth of the interface potential well from a fixed deep potential to a slow-release medium-shallow potential morphology. S13: After the interface relaxation is completed, the surface bound charges are rearranged and the surface is smoothed to obtain the interface-surface potential well slow release structure, and the interface-surface potential well slow release structure characteristics are output simultaneously. For example, in this embodiment, S13 specifically involves: after the interface relaxation is completed, the bound charge adjustment technology is used to rearrange the bound charges on the surface to form a slow-release charge band that transitions from the interface layer to the surface layer. It should be noted that the surface-bound charges are rearranged to prevent the interface potential well from exhibiting a steep drop, and instead transform it into a slow-release potential well with a buffer transition region; the surface smoothing treatment is intended to further ensure that the potential well structure between the interface and the surface exhibits a continuous and gradually changing mechanical and electrical boundary. S14: Based on the interface-surface potential well slow-release structure characteristics, the polarization characteristics of the interface region and the surface region in the thin film lithium niobate are extracted and compared. The polarization characteristics that are qualified by comparison are used as the initial polarization distribution characteristics for output.

[0021] It should be noted that the interface-surface potential well slow-release structure is a necessary condition for polarization imaging measurement, and a high-resolution polarization imaging device is used to extract the polarization characteristics of the inner interface region and the surface region of the thin film lithium niobate. The polarization features include: polarization direction features, polarization intensity continuity features, polarization crossover features, and local asymmetry features; It should also be noted that the comparison process is intended to confirm whether the evolution of polarization has broken away from deep potential dominance; S2: Input the initial polarization distribution characteristics into the double-layer potential well analytical module to obtain the interface-surface double-layer potential well slow-release model composed of the interface potential well layer and the surface potential well layer. Simultaneously, the polarization controllable region range was delineated on thin-film lithium niobate based on the interface-surface double-layer potential well slow-release model. S2 includes: S21: Input the initial polarization distribution characteristics into the interface analysis unit in the double-layer potential well analysis module to extract the basic parameters of the interface potential well weakening degree. Simultaneously, the interface stress gradient characteristics are recorded, and combined with the initial polarization distribution characteristics, a set of basic parameters for interface layer potential well weakening is formed. The basic parameters include: the degree of interface polarization asymmetry, the location of the interface-dominated polarization fly-through region, and the strength of the interface layer's blocking effect on the polarization path. S22: Input the basic parameter set of the interface layer potential well weakening into the interface potential well modeling unit, construct the interface potential well layer, and output the structural features of the interface potential well layer simultaneously. For example, in this embodiment, S22 specifically involves: inputting the interface layer potential well weakening basic parameter set into the interface potential well modeling unit, and constructing the interface potential well layer by analyzing the interface stress relaxation amount, the weakening ability of the polarization fly-through blocking point, and the asymmetric change trend of interface polarization. It should also be noted that the interface potential well layer is based on the process of the deep potential well of the interface layer turning into a shallow potential well. By gradually weakening the interface binding region, the interface potential well exhibits a slow-release form of continuous decline. S23: Input the structural features of the interface potential well layer into the surface potential well building unit, and construct the surface potential well layer by superimposing it with the surface bound charges through rearrangement. By coupling the surface potential well layer and the interface potential well layer into two potential wells, a two-layer potential well slow-release model of interface-surface potential well is obtained.

[0022] It should be noted that through the coupling of the interface potential well layer and the surface potential well layer, the deep potential region dominated by the interface layer is gradually weakened, while the surface potential well forms an adjustable shallow polarization region. It should also be noted that the interface-surface double-layer potential well slow-release model is spatially represented as a potential well staircase that gradually transitions from the interface to the surface, which aims to make the polarization reversal path physically continuous and capable of being driven by an external field. S24: Based on the interface-surface double-layer potential well slow-release model, the variation characteristics of the potential well gradient, the continuity characteristics of the energy barrier distribution from the interface to the surface, and the characteristics of whether the polarization fly-through is locked in the surface are analyzed. Then, the range of the polarization controllable region is delineated on the thin film lithium niobate.

[0023] It should be noted that the polarization controllable region reflects the spatial region of the polarization reversal path that has shifted from the interface-dominated region to the surface-dominated region. The polarization evolution behavior in these spatial regions has broken away from deep potential dependence and can be controlled by temperature field, bias field and stress field. S3: Input the polarization controllable region range into the annealing window planning module. Based on the slow-release characteristics of the interface potential well layer and the surface potential well layer, divide the mid-temperature field window into a three-segment window time series. Then, through the serialized window combination, form a multi-field coupled annealing window sequence. S3 includes: S31: Input the polarization controllable region into the window parameter analysis unit, extract three physical segments, and generate the primary boundary of each window sequence according to the position distribution, the trend of potential well gradient change, and the movable interval of the polarization reversal path. At the same time, analyze the polarization response intensity of each window sequence to obtain the polarization response intensity ratio matrix, and output the primary parameter set of the window by combining the primary boundary of each window sequence.

[0024] The three physical regions include: the interface potential well residual region, the interface-surface transition region, and the surface controllable region. The primary parameter set of the window includes: the primary boundary of the window sequence of each physical segment, the upper limit of the duration of the high temperature weak field segment, the target response range of the medium temperature field segment, and the time length range of the low temperature stress segment. For example, in this embodiment, the polarization response intensity ratio matrix is ​​specifically: ;in, The strength of the influence of the interface potential well in the interface potential well layer on the initial velocity of polarization reversal; The strength of the influence of the interface potential well in the interface potential well layer on the stability of the polarization reversal direction; The influence intensity of the surface potential well in the surface potential well layer on the polarization locking capability; The influence intensity of the surface potential well in the surface potential well layer on polarization uniformity; It should be noted that, in this embodiment, , , and The values ​​range from 0.1 to 1; In this embodiment, the polarization response intensity ratio matrix is ​​intended to determine the time weighting distribution relationship between the high-temperature segment and the medium-temperature segment; S32: Based on the initial parameter set of the window, perform time series generation processing of the functional partition window to obtain a three-segment window time series; For example, in this embodiment, S32 specifically involves: inputting the primary parameter set of the window into the window mathematical modeling unit to generate a time series of three windows, specifically including: an interface layer relaxation window, a surface layer controllable area initialization window, and a lattice distortion release window; Among them, the interface layer relaxation window corresponds to short time, high temperature and weak field; the surface layer controllable region initialization window corresponds to medium temperature and medium field; and the lattice distortion release window corresponds to long time, low temperature and stress loading. The time series of the three windows are defined as vectors, specifically: ;in, This indicates the high-temperature weak field window time. It should be noted that, in this embodiment... The value ranges from 0.1 to 5 minutes, and is determined by the amount of residual potential well at the interface within the polarization controllable region. This indicates the mid-season break time at medium temperatures. It should be noted that, in this embodiment, The value range is 0.5-10 minutes; This indicates the long-term low-temperature window time. It should be noted that, in this embodiment, The value ranges from 5 to 60 minutes, and is determined by the amount of lattice distortion released. In this embodiment, a midfield window time at medium temperature is provided. The acquisition strategy is as follows: ; in, The strength of the influence of the interface potential well in the interface potential well layer on the stability of the polarization reversal direction; The influence intensity of the surface potential well in the surface potential well layer on the polarization locking capability; S33: Based on a three-segment window time series, the temperature-bias field strength-stress synergistic curve is generated and processed, and a multi-field coupling window curve group is obtained by aligning the time coordinates. For example, in this embodiment, S33 specifically involves: inputting the three-segment window time series into the window collaborative control module to generate three curves, including: a temperature control curve, a bias field intensity control curve, and a stress control curve; The temperature control curve is high temperature → medium temperature → low temperature; the bias field intensity control curve is weak field → medium field → weak field; and the stress control curve is low stress → medium stress → high stress. Based on the change in the depth of the potential well within the polarization controllable region, the three curves are set as modulated continuous functions in each time period. Specifically, the temperature should gradually decrease in the high-temperature range, the bias field strength should remain stable in the medium-temperature range, and the stress should gradually increase in the low-temperature range. The three curves are then aligned using the time coordinate to form a three-channel coupling window, which is output as a multi-field coupling window curve group. S34: Based on the multi-field coupling window curve group, generate the annealing window execution sequence to obtain the multi-field coupling annealing window sequence.

[0025] For example, in this embodiment, S34 specifically involves: inputting the multi-field coupling window curve group into the execution sequence construction unit, and converting the three curves into an execution list that can be used by the annealing device based on the field control resolution, temperature stability and stress loading capability of the annealing device, thereby forming a multi-field coupling annealing window sequence that includes timestamp, target temperature, target bias field strength and target stress. It should be noted that, in this embodiment, the multi-field coupled annealing window sequence is intended to ensure that the thin film lithium niobate deviates from the interface depth according to a phased pattern during the annealing process, and locks the polarization direction in the controllable region of the surface layer; It should also be noted that, in this embodiment, S3 is divided into three window time sequences because the mid-temperature field window of the thin film lithium niobate is difficult to lock during annealing; the short-time high-temperature weak field window is intended for directional relaxation of the interface layer; the mid-temperature mid-field window is intended for initialization of polarization in the controllable region of the surface layer; and the low-temperature long-time stress window is intended for release of overall lattice distortion. Through the sequential combination of windows, the aim is to gradually remove the polarization reversal of the thin film lithium niobate from the deep potential control of the interface potential well, thereby entering the polarization controllable region. S4: Input the multi-field coupled annealing window sequence into the actual annealing device, and simultaneously load the corresponding temperature field, bias field strength and stress field and execute it; During execution, the polarization response curve set is dynamically monitored and recorded to obtain polarization evolution monitoring data; S4 includes: S41: Based on the multi-field coupled annealing window sequence, the execution environment is initialized and quantized to obtain the annealing execution initialization parameter set; The initialization of the execution environment is as follows: the multi-field coupled annealing window sequence is imported into the annealing device controller, and then the annealing device controller allocates an initial execution environment to the execution device according to the timestamp, target temperature, target bias field strength and target stress value in the multi-field coupled annealing window sequence, including the initial temperature setpoint, the reference bias field strength setpoint, the reference mechanical load value and the allowable error range. For example, in this embodiment, in order to quantify the initialization environment, the environment vector is defined as: ;in, The initial temperature; This is the initial bias field strength; This is the initial preload stress; it should be noted that, in this embodiment, The value range is 20-80℃. The value range is 0-30kV / cm. The value range is 0-20 MPa; S42: Based on the annealing execution initialization parameter set, perform temperature-bias field strength-stress three-field coupled loading processing, and record the real-time execution status of the annealing equipment to synchronously form a real-time execution status matrix.

[0026] The temperature-field strength-stress three-field coupled loading process is as follows: the annealing execution initialization parameter set is connected to the execution drive module, and the three-stage loading of high temperature weak field, medium temperature medium field, and low temperature strong stress is executed sequentially according to the three time periods in the multi-field coupled annealing window sequence; Then, after each time period of loading, the system records the actual temperature, actual bias field strength and actual stress in real time for the three time periods. The real-time execution state matrix is ​​specifically as follows: ; in, These represent the actual temperature, actual field strength, and actual stress in the high-temperature, weak-field segment, respectively. These represent the actual temperature, actual field strength, and actual stress in the mid-temperature field segment, respectively. These represent the actual temperature, actual field strength, and actual stress in the low-temperature stress range, respectively. S43: Input the real-time execution state matrix into the polarization monitoring module, generate three sets of polarization response curves by monitoring the polarization reversal trajectory, and output them synchronously as a set of polarization response curves; The polarization monitoring module measures the polarization reversal trajectory through a high-resolution polarization imaging probe, including: the trajectory of polarization direction changing over time, the movement speed of the polarization reversal front within the thin film lithium niobate, and the degree of polarization locking in the surface region. The system generates three sets of polarization response curves. The polarization response curve group Specifically: ;in, This represents the curve showing the change in polarization direction of the interface potential well layer; This represents the curve showing the change in polarization direction in the interface-surface transition region. This represents the curve showing the change in polarization direction in the controllable region of the surface. It should be noted that the polarization response curve set is intended to determine whether polarization reversal has successfully crossed the deep potential region and entered the controllable region; S44: Based on the polarization response curve set, evaluate the annealing window execution deviation and generate polarization evolution monitoring data.

[0027] For example, in this embodiment, S44 specifically involves: inputting the polarization response curve group into the deviation evaluation module; by comparing the response curves of each interval in the three sets of polarization response curves, the system provides the polarization controllability level, surface polarization stability level, and interface residual potential well magnitude based on the deviation of the response curves of each interval; and simultaneously packaging them to form the final polarization evolution monitoring data. The purpose of comparing the response curves of each interval in the three sets of polarization response curves is to determine whether polarization reversal strictly follows the target path of interface layer relaxation → transition region migration → surface controllable region locking. S5: Based on polarization evolution monitoring data, perform window calibration according to the calculated polarization deviation vector of multiple fields, and execute the calibrated multi-field coupled annealing window sequence again after the window calibration is completed.

[0028] S5 includes: S51: Based on polarization evolution monitoring data, calculate the directional deviations of the three regions—interface layer, transition region, and surface layer—to form a polarization deviation vector; The polarization evolution monitoring data is input into the deviation analysis module. The system uses the target polarization direction of the controllable area of ​​the surface as the reference direction to calculate the directional deviation of the interface layer, the transition region and the surface layer, forming a polarization deviation vector. For example, in this embodiment, the polarization deviation vector Specifically: ;in, This represents the polarization deviation of the interface potential well layer; This indicates the polarization deviation in the interface-surface transition region. This represents the polarization deviation in the controllable region of the surface. The strategy for obtaining the polarization deviation of the interface potential well layer is as follows: the polarization direction change curve of the interface potential well layer. The difference from the reference direction; The strategy for obtaining the polarization deviation in the interface-surface transition region is as follows: [Interface-surface transition region polarization direction change curve] The difference from the reference direction; The strategy for obtaining the polarization deviation of the controllable surface region is as follows: [The text abruptly ends here, seemingly mid-sentence.] The difference from the reference direction; It should be noted that in this embodiment, the polarization deviation is expressed as an angular difference, with a value range of 0 degrees to 20 degrees; S52: Based on the polarization deviation vector, construct a multi-field adjustment matrix to generate the adjustment vector; The polarization bias vector is input into the window convergence model, and a multi-field adjustment matrix is ​​formed using the polarization sensitivity coefficients of the three fields. Specifically: ; in, This is the coefficient representing the effect of temperature adjustment on polarization deviation. This is the coefficient representing the influence of the bias field strength on the polarization deviation. This is the coefficient representing the influence of stress adjustment on polarization deviation; It should be noted that, in this embodiment, , and The values ​​range from 0 to 1; Multi-field adjustment matrix The first line These represent the sensitivity coefficients of the interface layer relaxation segment to temperature, bias field strength, and stress, respectively; multi-field adjustment matrix. The second line Sensitivity coefficients for the polarization initialization phase in the transition region; multi-field adjustment matrix. The third line This represents the sensitivity coefficient of the surface polarization-locked segment; The adjustment vector is specifically: ; in, Including the amount of temperature adjustment that needs to be applied The required adjustment amount of the bias field strength and the amount of stress adjustment to be applied ; S53: Based on the multi-field adjustment matrix and adjustment vector, perform annealing window calibration and execution sequence generation to obtain the calibrated multi-field execution sequence; In this embodiment, the processing strategy for the calibrated multi-field execution sequence specifically involves: adjusting the multi-field adjustment matrix... The input is fed into the window calibration module, and then the corresponding temperature adjustment, field strength adjustment, and stress adjustment in the multi-field adjustment matrix are mapped to the three stages of the window. The system generates a calibrated execution sequence for each window segment based on the magnitude of the influence coefficients in the multi-field adjustment matrix, thus forming a calibrated multi-field execution sequence. The calibrated multi-field execution sequence includes: the new target temperature during the calibrated high-temperature weak-field period, the new target bias field during the calibrated medium-temperature mid-field period, and the new target stress during the calibrated low-temperature high-stress period. It should be noted that, in this embodiment, S53 is intended to enable the polarization reversal behavior to achieve a stable transition with a complete closed loop within the controllable region. S54: Based on the calibrated multi-field execution sequence, perform final execution and evaluation processing to obtain lattice-controlled final state data.

[0029] The calibrated multi-field execution sequence is input into the final execution and evaluation module. The system executes the calibrated multi-field coupled annealing window sequence again, and reads the final polarization direction, residual potential well depth and lattice distortion release degree. The data is then packaged into lattice modulation final state data, including: the spatial range of the surface polarization fully locked region, the degree of complete release of the interface deep potential, the uniformity of lattice distortion release and the polarization reversal stability level. It should be noted that, in this embodiment, step S5 aims to enable the calibrated thin-film lithium niobate structure to achieve a final state with interface-free deep potential locking, uniform polarization reversal, and predictable release of lattice distortion, thereby solving the problem of uncontrollable polarization in thin-film lithium niobate and achieving the technical objective of lattice controllability.

[0030] Example 2

[0031] This embodiment provides an electronic device, including: a processor and a memory, wherein the memory stores a computer program that can be called by the processor; The processor executes the aforementioned method for lattice manipulation of thin-film lithium niobate based on multi-field coupling annealing window optimization by calling the computer program stored in memory.

[0032] This electronic device can vary considerably depending on its configuration or performance. It may include one or more Central Processing Units (CPUs) and one or more memories, wherein the memory stores at least one computer program, which is loaded and executed by the processor to implement the thin-film lithium niobate lattice manipulation method based on multi-field coupling annealing window optimization provided in the above-described method embodiments. The electronic device may also include other components for implementing its functions; for example, it may have wired or wireless network interfaces and input / output interfaces for data input and output. Details will not be elaborated upon in this embodiment.

[0033] Example 3

[0034] This embodiment proposes a computer-readable storage medium on which an erasable and rewritable computer program is stored. When the computer program runs on the computer device, it causes the computer device to execute the above-mentioned thin-film lithium niobate lattice control method based on multi-field coupling annealing window optimization.

[0035] For example, computer-readable storage media can be read-only memory (ROM), random access memory (RAM), compact disc read-only memory (CD-ROM), magnetic tape, floppy disk, and optical data storage devices.

[0036] It should be understood that in the various embodiments of this application, the order of the above-mentioned processes does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0037] It should be understood that determining B based on A does not mean determining B solely based on A; it also means determining B based on A and / or other information.

[0038] The above embodiments can be implemented, in whole or in part, by software, hardware, firmware, or any other combination thereof. When implemented using software, the above embodiments can be implemented, in whole or in part, as a computer program product. A computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer programs are loaded or executed on a computer, all or part of the flow or function according to the embodiments of the present invention is generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. Computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via a wired network and / or wireless network. A computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that includes one or more sets of available media. Available media can be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., DVDs), or semiconductor media. Semiconductor media can be solid-state drives (SSDs).

[0039] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed in this invention can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0040] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0041] In the several embodiments provided by this invention, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only one method, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0042] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0043] In addition, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0044] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0045] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of this invention is defined by the appended claims and their equivalents.

Claims

1. A method for lattice manipulation of thin-film lithium niobate based on multi-field coupled annealing window optimization, characterized in that, The method includes: S1: Perform surface rearrangement treatment on the contact interface between the thin film lithium niobate and the substrate, and extract the initial polarization distribution characteristics of the thin film lithium niobate. S2: Input the initial polarization distribution characteristics into the double-layer potential well analytical module to obtain the interface-surface double-layer potential well slow-release model composed of the interface potential well layer and the surface potential well layer. Simultaneously, the polarization controllable region range was delineated on thin-film lithium niobate based on the interface-surface double-layer potential well slow-release model. S3: Input the polarization controllable region range into the annealing window planning module. Based on the slow-release characteristics of the interface potential well layer and the surface potential well layer, divide the mid-temperature field window into a three-segment window time series. Then, through the serialized window combination, form a multi-field coupled annealing window sequence. S4: Input the multi-field coupled annealing window sequence into the actual annealing device, and simultaneously load the corresponding temperature field, bias field strength and stress field and execute it; During execution, the polarization response curve set is dynamically monitored and recorded to obtain polarization evolution monitoring data; S5: Based on polarization evolution monitoring data, perform window calibration according to the calculated polarization deviation vector of multiple fields, and execute the calibrated multi-field coupled annealing window sequence again after the window calibration is completed.

2. The method for lattice control of thin-film lithium niobate based on multi-field coupled annealing window optimization according to claim 1, characterized in that, S1 includes: S11: Perform initial inspection and pre-cleaning on the lithium niobate thin film sample after epitaxy is completed, and simultaneously output the initial state record data of the interface. S12: Based on the initial state data of the interface, perform directional chemical bond relaxation on the interface layer; S13: After the interface relaxation is completed, the surface bound charges are rearranged and the surface is smoothed to obtain the interface-surface potential well slow release structure, and the interface-surface potential well slow release structure characteristics are output simultaneously. S14: Based on the interface-surface potential well slow-release structure characteristics, the polarization characteristics of the interface region and the surface region in the thin film lithium niobate are extracted and compared. The polarization characteristics that are qualified by comparison are used as the initial polarization distribution characteristics for output.

3. The method for lattice control of thin-film lithium niobate based on multi-field coupling annealing window optimization according to claim 2, characterized in that, S2 include: S21: Input the initial polarization distribution characteristics into the interface analysis unit in the double-layer potential well analysis module to extract the basic parameters of the interface potential well weakening degree. Simultaneously, the interface stress gradient characteristics are recorded, and combined with the initial polarization distribution characteristics, a set of basic parameters for interface layer potential well weakening is formed. S22: Input the basic parameter set of the interface layer potential well weakening into the interface potential well modeling unit, construct the interface potential well layer, and output the structural features of the interface potential well layer simultaneously. S23: Input the structural features of the interface potential well layer into the surface potential well building unit, and construct the surface potential well layer by superimposing it with the surface bound charges through rearrangement. By coupling the surface potential well layer and the interface potential well layer into two potential wells, a two-layer potential well slow-release model of interface-surface potential well is obtained.

4. The method for lattice control of thin-film lithium niobate based on multi-field coupling annealing window optimization according to claim 3, characterized in that, S2 also includes: S24: Based on the interface-surface double-layer potential well slow-release model, the variation characteristics of the potential well gradient, the continuity characteristics of the energy barrier distribution from the interface to the surface, and the characteristics of whether the polarization fly-through is locked in the surface are analyzed. Then, the range of the polarization controllable region is delineated on the thin film lithium niobate.

5. The method for lattice control of thin-film lithium niobate based on multi-field coupling annealing window optimization according to claim 4, characterized in that, S3 include: S31: Input the polarization controllable region into the window parameter analysis unit, extract three physical segments, and generate the primary boundary of each window sequence according to the position distribution, the trend of potential well gradient change, and the movable interval of the polarization reversal path. At the same time, analyze the polarization response intensity of each window sequence to obtain the polarization response intensity ratio matrix, and output the primary parameter set of the window by combining the primary boundary of each window sequence.

6. The method for lattice control of thin-film lithium niobate based on multi-field coupling annealing window optimization according to claim 5, characterized in that, S3 also includes: S32: Based on the initial parameter set of the window, perform time series generation processing of the functional partition window to obtain a three-segment window time series; S33: Based on a three-segment window time series, the temperature-bias field strength-stress synergistic curve is generated and processed, and a multi-field coupling window curve group is obtained by aligning the time coordinates. S34: Based on the multi-field coupling window curve group, generate the annealing window execution sequence to obtain the multi-field coupling annealing window sequence.

7. The method for lattice control of thin-film lithium niobate based on multi-field coupling annealing window optimization according to claim 6, characterized in that, S4 includes: S41: Based on the multi-field coupled annealing window sequence, the execution environment is initialized and quantized to obtain the annealing execution initialization parameter set; S42: Based on the annealing execution initialization parameter set, perform temperature-bias field strength-stress three-field coupled loading processing, and record the real-time execution status of the annealing equipment to synchronously form a real-time execution status matrix.

8. The method for lattice control of thin-film lithium niobate based on multi-field coupling annealing window optimization according to claim 7, characterized in that, S4 also includes: S43: Input the real-time execution state matrix into the polarization monitoring module, generate three sets of polarization response curves by monitoring the polarization reversal trajectory, and output them synchronously as a set of polarization response curves; S44: Based on the polarization response curve set, evaluate the annealing window execution deviation and generate polarization evolution monitoring data.

9. The method for lattice control of thin-film lithium niobate based on multi-field coupling annealing window optimization according to claim 8, characterized in that, S5 include: S51: Based on polarization evolution monitoring data, calculate the directional deviations of the three regions—interface layer, transition region, and surface layer—to form a polarization deviation vector; S52: Based on the polarization deviation vector, construct a multi-field adjustment matrix to generate the adjustment vector; S53: Based on the multi-field adjustment matrix and adjustment vector, perform annealing window calibration and execution sequence generation to obtain the calibrated multi-field execution sequence; S54: Based on the calibrated multi-field execution sequence, perform final execution and evaluation processing to obtain lattice-controlled final state data.

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